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11943985 | DETAILED DESCRIPTION OF THE EMBODIMENTS Hereinafter, embodiments will be described with reference to the accompanying drawings. In the drawings, the same or similar elements are denoted by the same reference numerals even though they are depicted in different drawings. In the following description, a detailed description of known functions and configurations incorporated herein will be omitted when it can make the subject matter of the disclosure rather unclear. In addition, names of components used in the following description are selected in consideration of ease in preparing the specification, and can be different from names of parts of an actual product. In the drawings for explaining the exemplary embodiments of the present invention, for example, the illustrated shape, size, ratio, angle, and number are given by way of example, and thus, are not limitative of the disclosure of the present invention. Throughout the present specification, the same reference numerals designate the same constituent elements. In addition, in the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it can make the subject matter of the present invention rather unclear. The terms “comprises”, “includes”, and/or “has”, used in this specification, do not preclude the presence or addition of other elements unless used along with the term “only.” The singular forms are intended to include the plural forms as well, unless the context clearly indicates otherwise. In the interpretation of constituent elements included in the various embodiments of the present invention, the constituent elements are interpreted as including an error range even if there is no explicit description thereof. In the description of the various embodiments of the present invention, when describing positional relationships, for example, when the positional relationship between two parts is described using “on”, “above”, “below”, “aside”, or the like, one or more other parts can be located between the two parts unless the term “directly” or “closely” is used therewith. In the description of the various embodiments of the present invention, when describing temporal relationships, for example, when the temporal relationship between two actions is described using “after”, “subsequently”, “next”, “before”, or the like, the actions may not occur in succession unless the term “immediately” or “directly” is used therewith. In the description of the various embodiments of the present invention, although terms such as, for example, “first” and “second” can be used to describe various elements, these terms are merely used to distinguish the same or similar elements from each other. Therefore, in the present specification, an element modified by “first” can be the same as an element modified by “second” within the technical scope of the present invention unless otherwise mentioned. The respective features of the various embodiments of the present invention can be partially or wholly coupled to and combined with each other, and various technical linkages therebetween and operation methods thereof are possible. These various embodiments can be performed independently of each other, or can be performed in association with each other. In this specification, the term “doped” can preferably mean that a material of any layer, which has physical properties (e.g., N-type and P-type, or an organic material and an inorganic material) different from the material that occupies the greatest weight percentage of the corresponding layer, is added to the material accounting for the greatest weight percentage in an amount corresponding to a weight percentage of less than 30%. In other words, a “doped” layer can preferably mean a layer in which a host material and a dopant material of any layer are distinguishable from each other in consideration of the weight percentages thereof. In addition, the term “undoped” can preferably refer to all cases excluding the case that corresponds to the term “doped”. For example, when any layer is formed of a single material or is formed of a mixture of materials having the same or similar properties, the layer is an “undoped” layer. For example, when at least one of constituent materials of any layer is of a P-type and not all of the other constituent materials of the layer are of an N-type, the layer is an “undoped” layer. For example, when at least one of the constituent materials of any layer is an organic material and not all of the other constituent materials of the layer are an inorganic material, the layer is an “undoped” layer. For example, when all constituent materials of any layer are organic materials, at least one of the constituent materials is of an N-type, at least another constituent material is of a P-type, and the weight percent of the N-type material is less than 30% or the weight percent of the P-type material is less than 30%, the layer is a “doped” layer. Meanwhile, in this specification, an electrolumnescence (EL) spectrum is calculated via the product of (1) a photoluminescence (Pt) spectrum that represents unique properties of an emissive material such as a dopant or host material included in an organic emissive layer and (2) an outcoupling emittance spectrum curve determined depending on the structure and optical properties of an organic liqht-emitting device including thicknesses of organic layers such as an electron transport layer. Hereinafter, a light-emitting device according to one or more embodiments of the present invention and a light-emitting display device including the same will be described with reference to the accompanying drawings. All the components of the light-emitting device as well as the light emitting display device according to all embodiments of the present disclosure are operatively coupled and configured. FIG.1is a sectional view showing a light-emitting device according to a first embodiment of the present invention.FIG.2is a graph showing PL properties of a fluorescent dopant, a TADF dopant, and a phosphorescent dopant applied to a light-emitting device and a light-emitting display device according to the present invention. As shown inFIG.1, a light-emitting device2000according to the first embodiment of the present invention includes an anode110and a cathode170disposed on a substrate100so as to be opposite each other, a charge generation layer130disposed between the anode110and the cathode170, a first stack S1 disposed between the anode110and the charge generation layer130, and a second stack S2 disposed between the charge generation layer130and the cathode170. Each of the first stack S1 and the second stack S2 includes an emissive layer and common layers disposed on and under the emissive layer. The first stack S1 and the second stack S2 overlap each other in the same subpixel and are disposed at different vertical positions. Each emissive layer includes a host and a dopant. The host is the main material and is included so as to account for 50 wt % or more in each emissive layer. In the light-emitting device2000according to the present invention, dopants in different stacks exhibit different luminous properties, whereby lifespan and efficiency of the light-emitting device are simultaneously improved. Specifically, the first stack S1 includes a hole injection layer111, a first hole transport layer112, a first emissive layer1100, and a first electron transport layer115. Here, the first emissive layer1100includes a first host h1 and a single first fluorescent dopant fd1 in the first host. The first fluorescent dopant fd1 can adjust the wavelength of color light that a singlet exciton generated as the result of recombination of a hole and an electron emits while lowering to ground state energy. The second stack S2 includes a second hole transport layer116, a second emissive layer1200, and a second electron transport layer118. The second emissive layer1200includes a second host h2 and a second fluorescent dopant fd2 and a non-fluorescent dopant nfd, such as a phosphorescent dopant pd or a thermally activated delayed fluorescence (TADF) dopant, in the second host. Both the second fluorescent dopant fd2 and the non-fluorescent dopant nfd emit the same color-based light (or the same color light) as the first fluorescent dopant fd1. For example, in the light-emitting device2000according to the present invention, color efficiency of light of a single predetermined fluorescent color of the first emissive layer1100of the first stack S1 is improved through a plural stack structure. Here, the first and second fluorescent dopants fd1 and fd2 can be the same fluorescent dopants, but such is not required. In order to improve light efficiency of pure color, as shown inFIG.2, the first and second fluorescent dopants fd1 and fd2 can be materials having the same emission peak properties and the same PL spectrum, but such is not required. The “non-fluorescent dopant nfd” defined in the present invention can be a dopant having luminous properties of non-pure fluorescence, and can be, for example, a phosphorescent dopant or a thermally activated delayed fluorescence dopant. For reference, there are a singlet exciton and a triplet exciton as examples of an exciton generated as the result of recombination of a hole and an electron. Fluorescence occurs when the singlet exciton participates in light emission, and phosphorescence occurs when the triplet exciton participates in light emission. Electrons and holes injected to drive the light-emitting device are recombined to form an exciton. At this time, the exciton can be classified as a singlet exciton or a triplet exciton depending on the spin state thereof. Probabilistically, 25% of singlet excitons are formed, and 75% of triplet excitons are formed. Since a fluorescent dopant emits light using only singlet excitons, the maximum internal quantum efficiency thereof is limited to 25%, and 75% of triplet excitons disappear through various radiationless decay processes. A phosphorescent dopant additionally uses triplet excitons, which are not used by the fluorescent dopant, in a light emission process. Theoretically, the internal quantum efficiency thereof is greatly increased, whereby efficiency of the device itself can be maximized. In a phosphorescent dopant, however, excitation lifespan of the triplet excitons is long in the triplet excitation process, triplets that do not participate in light emission and disappear are generated due to triplet-triplet annihilation (TTA), and the excitation state is saturated. As a result, the luminous lifespan of a phosphorescence device including a single phosphorescent dopant is shorter than the luminous lifespan of a fluorescence including a single fluorescent dopant. In a thermally activated delayed fluorescence dopant, a triplet exciton is capable of performing reverse intersystem crossing (RISC) from a triplet state (T1 level) to a singlet state (S1 level). Triplet excitons that are not used for phosphorescence emission are delayed through reverse intersystem crossing so as to be used for fluorescence emission. Direct fluorescence emission and delayed fluorescence emission of a singlet exciton are simultaneously possible. The light-emitting device according to the present invention is applicable to for example, a blue light-emitting device that emits blue light. In the above, the efficiency of a phosphorescent dopant and a thermally activated delayed fluorescence dopant has been described as being higher than the efficiency of a fluorescent dopant. In various settings, it can be difficult to increase the lifespan of blue light-emitting materials to a predetermined level or more, compared to other color light-emitting materials. Particular, in an emissive layer including a blue phosphorescent dopant or a blue delayed fluorescence dopant, it is necessary to stably design a host having a higher triplet state than a dopant configured to be excited or transited from a triplet state. Since the blue phosphorescent dopant or the blue delayed fluorescence dopant has a higher triplet state than other color phosphorescence or delayed fluorescence dopants, it is difficult to design a host for a blue emissive layer, compared to other color emissive layers. In addition, a host having a high triplet state has a large HOMO-LUMO energy band gap. In this case, electron and hole transport ability is lowered. As a result, stability of light-emitting devices including a blue phosphorescent dopant or a blue delayed fluorescence dopant as a single emissive dopant is lowered over time. In particular, the light-emitting device2000according to the present invention includes the first fluorescent dopant fd1, the lifespan of which can be increased to a predetermined level or more, in the first emissive layer1100of the first stack S1 as a single emissive dopant, and includes the second fluorescent dopant fd2 and the non-fluorescent dopant nfd in the second emissive layer1200of the second stack S2 in order to improve efficiency together with lifespan. As an example, the non-fluorescent dopant nfd in the second emissive layer1200can be one that is not included or is lacking in the first emissive layer1100. In one or more embodiments, when provided with two of more stacks, one of the stacks can include the non-fluorescent dopant nfd, while the other stack or stacks do not include or lack the non-fluorescent dopant nfd. The first fluorescent dopant fd1 of the first emissive layer1100and the second fluorescent dopant fd2 of the second emissive layer1200, which have the same emission peak or an emission peak difference of less than 5 nm, emit almost the same color light. Depending on circumstances, the first and second fluorescent dopants fd1 and fd2 can be the same material. In the second emissive layer1200, the second fluorescent dopant fd2 and the non-fluorescent dopant nfd, such as a phosphorescent dopant or thermally activated delayed fluorescence dopant, are used together in light emission. In this case, the first and second hosts h1 and h2 included in the first and second emissive layers1100and1200can transfer energy while the PL spectra thereof, which have absorption properties, overlap emissive PL spectra of the first and second fluorescent dopants fd1 and fd2. In the case in which the triplet state (triplet energy level T1) of the second host h2 of the second emissive layer1200is higher than that of the phosphorescent dopant pd or the thermally activated delayed fluorescence dopant tad, emission of the phosphorescent dopant pd or the thermally activated delayed fluorescence dopant tad as the non-fluorescent dopant nfd can directly transmit energy to the phosphorescent dopant pd. Consequently, the second host h2 can be selected from a material having a Pt spectrum, which has an absorption property, overlapping the Pt spectrum of the second fluorescent dopant fd2, which has an emission property, and having a higher triplet state than the non-fluorescent dopant nfd. Depending on circumstances, the second host h2 can include two or more different kinds of ingredients such that the second fluorescent dopant fd2 and the non-fluorescent dopant nfd participate in excitation in the second emissive layer1200. In the second emissive layer1200, the second host h2 can be included as one or more kinds. Even in the case in which the second host h2 is constituted so as Lo be included as plurality kinds, the second host h2 included so as to account for 50 wt % or more. Consequently, the second fluorescent dopant fd2 and the non-fluorescent dopant nfd can be included so as to account for less than 50 wt %, preferably 40 wt % or less, more preferably 30 wt % or less. The first host h1 included in the first emissive layer1100can be constituted by a single ingredient, or two or more kinds of hosts having different hole and electron mobilities in order to improve electron and hole transportability can be included. In the first emissive layer1100, the first fluorescent dopant fd1 can be included so as to account for preferably 40 wt % or less, more preferably 30 wt % or less. Each of the first and second fluorescent dopant fd1 and fd2 can be an organic compound having boron as a core, and can be a compound represented by Chemical Formulas 1 to 3, for example, as a blue fluorescent dopant. A non-fluorescent dopant included in the second emissive layer1200can be a compound having a heavy metal as a core represented by Chemical Formulas 4 to 6 as an example of a blue phosphorescent dopant. In the presented examples, iridium (Ir) is used as the heavy metal. However, the present invention is not limited thereto. An example of a heavy metal element can be a metal complex compound including iridium (Ir), platinum (Pt), osmium (Os), gold (Au), titanium (Ti), zirconium (Zr), hafnium (Hf), europium (Eu), terbium (Tb), palladium (Pd), or thulium (Tm). However, the present invention is not limited thereto. The heavy metal element can be changed to another core heavy metal as needed. In addition, a non-fluorescent dopant can be a compound represented by Chemical Formulas 7 to 9 as an example of a blue delayed phosphorescent dopant, which is a modification of a phosphorescent dopant. The blue delayed phosphorescent dopant is a polymer compound having boron as core and further having a substituent, such as an alkyl group, at a distal end thereof, compared to the above-described blue fluorescent dopant, and satisfies a condition in which a singlet state and a triplet state have a predetermined value, e.g., 0.4 eV or less. The presented example is merely an example, and any material capable of achieving delayed phosphorescence together with a phosphorescent dopant in the same emissive layer can be used. A phosphorescent dopant or a thermally activated delayed fluorescence dopant, as a single material that emits blue light, uses a triplet exciton in light emission in addition to a singlet exciton, compared to a fluorescent dopant, whereby efficiency is high. As described above, however, the lifespan of the phosphorescent dopant and the thermally activated delayed fluorescence dopant is limited as a single emissive material. In the light-emitting device2000according to the present invention, the second emissive layer1200of the second stack S2 includes a second fluorescent dopant fd2 together with a phosphorescent dopant d or a thermally activated delayed fluorescence dopant tad, whereby lifespan can be increased through fluorescence emission due to continuous excitation of a singlet exciton, and efficiency can be improved through emission of a triplet exciton and reverse intersystem crossing from a triplet state to a singlet state. The non-fluorescent dopant, such as the phosphorescent dopant pd or the thermally activated delayed fluorescence dopant tad, used in the present invention has a longer wavelength than the first and second fluorescent dopants fd1 and fd2, as shown inFIG.2. In the emission peak thereof, the non-fluorescent dopant has a longer wavelength by 1 nm to 30 nm than the first and second fluorescent dopants fd1 and fd2. Meanwhile, in the light-emitting device according to the present invention, light emitted from the first and second emissive layers1100and1200of the first and second stacks S1 and S2 is resonated while being repeatedly reflected and re-reflected between the anode110and the cathode170and finally exits through the cathode170. Light emitted from the first and second emissive layers1100and1200is the same color-based light (or the same color light). Since light generated in two stacks is summed and exits through the cathode170, efficiency of the same color-based light (or the same color light) can be improved, compared to a single stack. The examples presented inFIG.2are PL emission spectra of the first and second fluorescent dopants fd1 and fd2, the phosphorescent dopant pd, and the thermally activated delayed fluorescence dopant tad used in the following experimental examples. Each of the first and second fluorescent dopants fd1 and fd2, the phosphorescent dopant pd, and the thermally activated delayed fluorescence dopant tad emits blue light. In the case in which the light-emitting device ofFIG.1using such dopants is realized, the lifespan of blue can be increased to a predetermined level or more through the first emissive layer, which has a single fluorescent dopant, and the phosphorescent dopant OE the thermally activated delayed fluorescence dopant emits light together with the second fluorescent dopant in the second emissive layer, whereby blue emission efficiency is improved, whereby lifespan and emission efficiency can be simultaneously improved. The concrete effects of the light-emitting device will be described below with reference to the following experiments. The example ofFIG.2shows an example of a blue emissive dopant. However, in the case in which a different color emissive dopant is configured such that an emissive layer having only a fluorescent dopant is provided in the first stack and a non-pure fluorescent dopant, such as a phosphorescent dopant or a thermally activated delayed fluorescence dopant, is included in the second stack together with a fluorescent dopant, as in the structure of the light-emitting device described above, both efficiency and lifespan can be improved, compared to a structure having a fluorescent dopant of a different stack structure. The reason that a blue emissive dopant is presented by way of example inFIG.2is that a structure having a blue emissive layer has lower lifespan and efficiency than a red emissive layer or a green emissive layer, and therefore the example ofFIG.2is presented as an example for solving this. Since visibility is reduced at the time of blue light emission, high intensity of an EL spectrum is required, compared to other color light emission. Consequently, the blue emissive layer requires higher intensity of an EL spectrum than other colors at the time of realization of white light. As a result, the lifespan of the blue emissive dopant tends to be lower than dopants of other color emissive layers at the time of driving. Both the lifespan and efficiency of the light-emitting device according to the present invention are improved by the provision of a dual stack structure including first and second stacks and different emissive layers in two stacks. The first and second emissive layers1100and1200of the first and second stacks S1 and S2, which overlap each other, are materials that emits the same color-based light (or the same color light), although there is a small difference in emission peak. The first and second emissive layers1100and1200of the first and second stacks S1 and S2 emit light in a supplementary state. In the first and second emissive layers1100and1200, each of the first host h1 and the second host h2 can be a single material, or can include a plurality of materials having different properties as needed. Meanwhile, the structure ofFIG.1other than the emissive layers will be described. The hole injection layer111is formed of a material that receives a little energy barrier or acts as a lower barrier as compared to the anode110and has lower surface resistance such that injection of a hole from the anode110is easily performed. To this end, a p-type dopant can be included in a hole transport material. Each of the first hole transport layer112and the second hole transport layer116can easily transport a hole supplied through the hole injection layer111or the charge generation layer130to the first emissive layer1100or the second emissive layer1200, and is made of a hole transport material. Each of the first and second electron transport layers115and118is a layer for transporting an electron to a corresponding one of the first emissive layer1100and the second emissive layer1200, and includes an electron transport material. Meanwhile, as needed, a first or second electron blocking layer113or142for preventing an electron or exciton from exiting from a corresponding emissive layer can be further provided between the first hole transport layer112and the first emissive layer1100or between the second hole transport layer116and the second emissive layer1200, and hole blocking layers114and117for preventing holes from exiting from the corresponding emissive layers can be further provided between the first emissive layer1100and the first electron transport layer115and between the second emissive layer1200and the second electron transport layer118. An electron injection layer160is further included between the cathode170and the second electron transport layer118. The electron injection layer160is a layer that functionally assists in injection of an electron from the cathode170to an internal organic material. To this end, an inorganic compound, such as LiF or MgF, an alkaline metal, such as Li, an alkaline earth metal, such as Ca, a transition metal, such as Yb, or a metal constituting the cathode170can be further included. The electron injection layer160is a metal or a metal compound in terms of material, and can form the same chamber together with the cathode170. Consequently, the electron injection layer160can be referred to as a cathode sub metal or a cathode metal. Hereinafter, a light-emitting display device according to the present invention configured such that the light-emitting device ofFIG.1is provided as a blue subpixel and emissive layers having the same luminous properties are provided for a red subpixel and a green subpixel will be described by way of example. FIG.3is a sectional view showing an example of a light-emitting display device according to the present invention. All the components of the light-emitting display device according to all embodiments of the present disclosure are operatively coupled and configured. As shown inFIG.3, a light-emitting display device4000according to the present invention includes a substrate100having first to third subpixels B-SP, G-SP, and R-SP, a thin film transistor TFT provided in each subpixel, an anode110connected to the thin film transistor TFT, the anode being provided in each of the first to third subpixels B-SP, G-SP, and R-SP, a cathode170opposite the anode110, the cathode being provided in each of the first to third subpixels B-SP, G-SP, and R-SP, a charge generation layer130between the anode and the cathode, a first stack S1 located in each of the first to third subpixels B-SP, G-SP, and R-SP between the anode110and the charge generation layer130, and a second stack S2 located in each of the first to third subpixels B-SP, G-SP, and R-SP between the charge generation layer130and the cathode170. A hole injection layer111, a first hole transport layer112, a first hole blocking layer114, a first electron transport layer115, and a charge generation layer130of the first stack S1 and a second hole transport layer116, a second hole blocking layer117, and a second electron transport layer118of the second stack S2 are common layers formed over the first to third subpixels B-SP, G-SP, and R-SP. The common layers, the electron injection layers160, and the cathodes170are formed over the display region of the substrate100as individuals, and can be formed without microscopic metal masks. In addition, the charge generation layer130can be constituted by stacking an n-type charge generation layer131and a p-type charge generation layer132, as shown inFIG.3, or can be constituted as a single layer, in which an n-type dopant and a p-type dopant can be included. Depending on circumstances, the charge generation layer can be constituted as three or more layers having different ingredients. In the first to third subpixels B-SP, G-SP, and R-SP, the first and second stacks S1 and S2, particularly emissive layers thereof, are different in construction from each other. In the second subpixel G-SP, each stack includes a green emissive layer. In the third subpixel R-SP, each stack includes a red emissive layer. In the light-emitting display device ofFIG.3, color-based optical distances are different from each other due to different thicknesses of the emissive layers and by the provision of a hole transport assistance layer. For red light, which has a relatively large optical distance, the thickness of each of first and second red emissive layers121and151of the third subpixel R-SP is greater than the thickness of each of first and second blue emissive layers123and153of the first subpixel B-SP and is also greater than the thickness of each of the first and second green emissive layers122and152of the second subpixel G-SP. Meanwhile, a hole transport assistance layer141is further provided under the second red emissive layer151. Since there is a limit in increasing the thicknesses of the first and second red emissive layers121and151in terms of material and process and an emissive region of the red emissive layer is actually formed in only a portion of the thickness of the red emissive layer, the thickness of the first red emissive layer121is formed so as to be greater than the thicknesses of the first green emissive layer122and the first blue emissive layer123, whereby the thickness of the first red emissive layer121in the first stack S1 is adjusted. In the second stack S2, the thickness of the second red emissive layer151is formed so as to be equal to the thickness of the first red emissive layer121, and the hole transport assistance layer141is further provided under the second red emissive layer151, whereby the optical distance necessary for red emission in the second stack S2 is adjusted. Here, the hole transport assistance layer141can be formed using the same chamber and/or the same mask as the second red emissive layer151, and can be formed of a different material that is supplied before formation of the second red emissive layer151. In the first subpixel B-SP, first and second electron blocking layers113and142can be further included under the first and second blue emissive layers123and153, respectively. The reason that the first and second electron blocking layers113and142are further included in the first subpixel B-SP is that the thickness of the emissive layer is less than other subpixels. For example, in the first subpixel B-SP, an emissive region generated as the result of recombination of a hole and an electron is concentrated on the lower surfaces of the first and second blue emissive layers123and153. As a result, an exciton or an electron tends to move downwards from the first and second blue emissive layers123and153. In order to prevent this, the first and second electron blocking layers113and142are further provided under the first and second blue emissive layers123and153, respectively. Also, in the first subpixel B-SP, the first blue emissive layer123of the first stack S1 has a first host h1 and a first fluorescent dopant fd1, as described with reference toFIGS.1and2. The second blue emissive layer153of the second stack S2 has a second host h2, a second fluorescent dopant fd2, and a non-fluorescent dopant nfd. Each of the first fluorescent dopant fd1, the second fluorescent dopant fd2, and the non-fluorescent dopant nfd can have an emission peak at a wavelength of 435 nm to 490 nm. Here, the non-fluorescent dopant nfd can be a phosphorescent dopant pd or a thermally activated delayed fluorescence dopant tad. The first and second blue emissive layers123and153emit the same blue-based light. In the second subpixel G-SP, the first and second green emissive layers122and152of the first and second stacks S1 and S2 include hosts and dopants having the same luminous properties. For example, the first and second green emissive layers can be emissive layers having the same fluorescence properties or the same phosphorescence properties. Each of the first and second green emissive layers122and152can have an emission peak at a wavelength of 510 nm to 590 nm. In the third subpixel R-SP, the first and second red emissive layers121and151of the first and second stacks S1 and S2 include hosts and dopants having the same luminous properties. For example, the first and second red emissive layers can be emissive layers having the same fluorescence properties or the same phosphorescence properties. The first and second red emissive layers121and151can have fifth and sixth emissive layers each having an emission peak at a wavelength of 600 nm to 650 nm. In the following experimental examples, the light-emitting display device according to the present invention was configured such that the first and second red emissive layers121and151and the first and second green emissive layers122and152are constituted by a phosphorescent emissive layer, the first blue emissive layer123is constituted by a fluorescent emissive layer, and the second blue emissive layer153is constituted by an emissive layer having fluorescence and phosphorescence or delayed fluorescence, whereby it can be seen that each color light had equal effects in expressing white light. Meanwhile, the anode110is connected to the thin film transistor TFT provided in each of the subpixels B-SP, G-SP, and R-SP on the substrate100, and can be driven for each subpixel. A capping layer180configured to protect the light-emitting device and to improve light exit efficiency is provided on the cathode170. The capping layer180can be constituted by stacking, for example, an organic capping layer181and an inorganic capping layer182. However, the present invention is not limited thereto. The capping layer can have a single layer or a structure in which a plurality of layers having different refractive indices is stacked. Hereinafter, efficiency and lifespan properties will be described for each experimental example, whereby the meaning of the light-emitting device according to the present invention will be described. First, a single stack structure, which is compared to a plural stack structure of the light-emitting device according to the present invention, will be described. FIG.4is a sectional view of a light-emitting device according to each of first to third experimental examples, andFIG.5is a graph showing a CIEy-BI relationship of each of the first to third experimental examples. As shown inFIG.4, the light-emitting device according to each of the first to third experimental examples Ex1, Ex2, and Ex3has a structure in which a hole injection layer11, a hole transport layer12, an electron blocking layer13, a blue emissive layer23, a hole blocking layer14, an electron transport layer15, and an electron injection layer16are disposed between an anode10and a cathode30. A capping layer40can be included on the cathode30. The light-emitting device ofFIG.4is different from the light-emitting device ofFIG.1in that a single stack is provided. In the first experimental example Ex1, the blue emissive layer23has a host and a single fluorescent dopant. In the second experimental example Ex2, the blue emissive layer23has a host and a single phosphorescent dopant. In the third experimental example Ex3, the blue emissive layer23has a host and a single thermally activated delayed fluorescence dopant TABLE 1PropertiesEx1Ex2Ex3ColorCIEy at BI0.0530.0810.088coordinatesmaxBI220.8399.3363.6EfficiencyEfficiency100181165compared toEx1 (%)LifespanT95 (hrs)40050180Lifespan10012.545compared toEx1 (%) In the light-emitting device ofFIG.4, the first to third experimental examples Ex1, Ex2, and Ex3are identical in structure to each other except that the emissive layers of the first to third experimental examples have a blue fluorescent dopant fd, a blue phosphorescent dopant pd, and a blue thermally activated delayed fluorescence dopant tad, respectively. In Table 1, the blue index BI is a value obtained by dividing the efficiency of each experimental example by the CIEy value. In general, a large value means high efficiency, but it does not mean that a large value is necessarily excellent. CIEy expresses a pure color. In the case in which CIEy is lower, it is possible to reproduce a purer blue color. In the display device, a CIEy color coordinate value of 0.070 or less is required for pure blue efficiency. As shown in Table 1 andFIG.5, efficiencies of the second and third experimental examples Ex2and Ex3are 181% and 165% of that of the first experimental example Ex1, respectively, which are high efficiencies. However, the CIEy color coordinates of the first to third experimental examples EX1, Ex2, and Ex3under the conditions having the maximum blue indices BI are 0.053, 0.081, and 0.088, respectively. The second and third experimental examples Ex2and Ex3have high efficiencies, whereby the blue indices are high, but the CIEy values exceed 0.070. This means that it is difficult to reproduce a pure blue color in the second and third experimental examples Ex2and Ex3. In addition, it can be seen that the lifespan of the first experimental example Ex1using the blue fluorescent dopant is 8 times or 2.2 times the case in which the blue phosphorescent dopant or the thermally activated delayed fluorescence dopant is used, i.e., the lifespan of the first experimental example is excellent. In comparison between the first to third experimental examples EX1, Ex2, and Ex3, the phosphorescent dopant or the thermally activated delayed fluorescence dopant has excellent efficiency in the single stack structure for at least blue emission. However, reproduction of color purity suitable for the display device is lowered, and it is difficult to increase lifespan to a predetermined level or more. Hereinafter, experimental examples each having a plurality of stacks applied thereto configured such that blue emissive layers of first and second stacks are different in construction from each other will be described. Each light-emitting device has the structure of the device described with reference toFIG.1. FIG.6is a graph showing a CIEy-BI relationship according to each of fourth to eighth experimental examples. In the same manner as inFIG.1, the light-emitting devices of the fourth to eighth experimental examples are identical in construction to each other except for emissive layers1100and1200of first and second stacks. For example, the fourth experimental example Ex4was configured such that a first blue emissive layer of the first stack S1 includes a first host h1 and a fluorescent dopant fd1 and such that a second blue emissive layer of the second stack S2 includes a first host h1 and a second fluorescent dopant fd2 in the same manner as the first blue emissive layer. The fluorescent dopants fd1 and fd2 of the first and second blue emissive layers were constituted by the same blue fluorescent dopants. The fifth experimental example Ex5was configured such that a first blue emissive layer of the first stack S1 includes a first host h1 and a fluorescent dopant fd1 and such that a second blue emissive layer of the second stack S2 includes a second host h2, a second fluorescent dopant fd2, and a phosphorescent dopant pd. The sixth experimental example Ex6was configured such that a first blue emissive layer of the first stack S1 includes a first host h1 and a fluorescent dopant fd1 and such that a second blue emissive layer of the second stack S2 includes a second host h2, a second fluorescent dopant fd2, and a thermally activated delayed fluorescence dopant tad. The seventh experimental example Ex7was configured such that a first blue emissive layer of the first stack S1 includes a first host h4 and a first phosphorescent dopant pd1 and such that a second blue emissive layer of the second stack S2 includes a first host h4 and a second phosphorescent dopant pd2 in the same manner as the first blue emissive layer. The phosphorescent dopants pd1 and pd2 of the first and second blue emissive layers were constituted by the same blue phosphorescent dopants. The eighth experimental example Ex8was configured such that a first blue emissive layer of the first stack S1 includes a first host h5 and a first thermally activated delayed fluorescence dopant tad1 and such that a second blue emissive layer of the second stack S2 includes a first host h5 and a second thermally activated delayed fluorescence dopant tad2 in the same manner as the first blue emissive layer. The thermally activated delayed fluorescence dopants tad1 and tad2 of the first and second blue emissive layers were constituted by the same blue thermally activated delayed fluorescence dopants. TABLE 2ClassificationEx4Ex5Ex6Ex7Ex8EMLB-EML2h1 + fd2h2 + fd2 + pdh3 + fd2 + tadh4 + pd2h5 + tad2structure(S2)B-EML1h1 + fd1h1 + fd1h1 + fd1h4 + pd1h5 + tad1(S1)Color coordinates0.0450.0650.0700.0730.082(CIEy at BI max)EfficiencyBI319430400595555Compared100135125187174to Ex4(%)LifespanCompared—6010527.590to Ex1(%) As shown in Table 2 andFIG.6, in the fourth experimental example Ex4including pure fluorescent emissive layers having a two-stack structure, the CIEy color coordinate value is reduced, whereby blue reproduction rate is increased, and therefore efficiency is improved, compared to the single blue fluorescent emissive layer structure of the first experimental example Ex1, but efficiency is lower by 25% of more, compared to the other experimental examples. In the fifth and sixth experimental examples Ex5 and Ex6, the first blue emissive layer1100of the first stack includes a single first blue fluorescent dopant fd1 as an emissive material, and the second blue emissive layer1200of the second stack includes a phosphorescent dopant pd or a thermally activated delayed fluorescence dopant tad together with a second blue fluorescent dopant fd2 as an emissive material. In this case, the CIEy value is 0.070 or less, whereby pure blue expression is possible, and the efficiency is 125% of that of the fourth experimental example Ex4. Consequently, it can be seen that pure blue expression is possible and efficiency is also improved. In addition, it can be seen that the fifth experimental example Ex5and the sixth experimental example Ex6have efficiencies of 60% and 105% of that of the first experimental example Ex1, the lifespan of which is excellent in the single stack structure, and therefore lifespan is also increased. The lifespan of the fifth experimental example Ex5is 60% of that of the first experimental example Ex1, and the efficiency thereof expressed by the blue index is 430, which is about 1.95 times 220.8 of the first experimental example Ex1. In the fifth experimental example Ex5, it is possible to reduce driving voltage due to increased efficiency thereof. For example, in the first experimental example Ex1 and the fifth experimental example Ex5, times at which luminance becomes 95% of the initial luminance at the same current density are measured and compared. When driving times of the fifth experimental example Ex5 and the first experimental example Ex1 at the same luminance are measured and compared with each other, the driving time of the fifth experimental example Ex5 is 1.17 times that of the first experimental example Ex1, and therefore a meaningful result can be expected in terms of lifespan when an actual display device is realized. The lifespan of the sixth experimental example Ex6 is 105% of that of the first experimental example Ex1, and the blue index efficiency thereof is 400, which is 181% of the blue index efficiency of the first experimental example Ex1. The sixth experimental example Ex6 has meaningful results in terms of both lifespan and efficiency. Of course, when driving times of the sixth experimental example and the first experimental example at the same luminance are measured, the driving time of the sixth experimental example is 1.90 times that of the first experimental example, whereby the lifespan of the sixth experimental example is higher than that of the first experimental example. Meanwhile, the CIEy value of each of the seventh experimental example Ex7, in which only the phosphorescent emissive layers are realized in the plural stack structure, and the eighth experimental example, in which only the thermally activated delayed fluorescence emissive layers are realized in the plural stack structure, is 0.073 or more, and therefore it can be seen that pure blue reproduction is difficult. The light-emitting device according to the first embodiment of the present invention uses the structure of each of the fifth and sixth experimental examples. Hereinafter, a second embodiment of the present invention, in which the structure of a second stack is changed, will be described. As an example,FIG.7is a sectional view showing a light-emitting device according to the second embodiment of the present invention.FIG.8is a sectional view showing a light-emitting display device having the structure ofFIG.7.FIG.9is a graph showing a CIEy-BI relationship according to each of fourth, fifth, and ninth experimental examples. As shown inFIG.7, a light-emitting device3000according to the second embodiment of the present invention is configured such that a first stack S1 has the same structure as the light-emitting device ofFIG.1, i.e., the first stack includes a first emissive layer1100having a first host h1 and a first fluorescent dopant fd1, and a second emissive layer1210of a second stack S2 includes a first sub emissive layer1211having a second host h2 and a second fluorescent dopant fd2 and a second sub emissive layer1212having a third host h3 and a non-fluorescent dopant nfd. The non-fluorescent dopant nfd can be a phosphorescent dopant or a thermally activated delayed fluorescence dopant. The thickness of the second emissive layer1210constituted by stacking the first and second sub emissive layers1211and1212is similar to the thickness of the first emissive layer1100of the first stack S1. In this case, the non-fluorescent dopant, i.e., the phosphorescent dopant or the thermally activated delayed fluorescence dopant, in the second sub emissive layer1212participates in light emission, and some energy is transmitted to the first sub emissive layer1211thereunder in order to improve fluorescence efficiency of the first sub emissive layer1211. FIG.8shows a light-emitting display device5000including the structure of the light-emitting device3000inFIG.7. A first subpixel B-SP emitting blue light has the stack structure ofFIG.7, and each of a second subpixel G-SP emitting green light and a third subpixel R-SP emitting red light has the same structure as inFIG.3.FIG.8further optionally provides a second emissive layer250having a first sub emissive layer251and a second sub emissive layer252that correspond to the second emissive layer1210of the second stack S2 including the first sub emissive layer1211having the second host h2 and the second fluorescent dopant fd2 and the second sub emissive layer1212having the third host h3 and the non-fluorescent dopant nfd ofFIG.7. Otherwise, a description of the same parts will be omitted or may be briefly provided. Hereinafter, the efficiency and lifespan of the light-emitting device according to the second embodiment of the present invention will be described through experiments. TABLE 3ClassificationEx4Ex5Ex9EML structureB-EML2 (S2)h1 + fd2h2 + fd2 + pdh3 + pdh2 + fd2B-EML1 (S1)h1 + fd1h1 + fd1h1 + fd1Color coordinates (CIEy at BI max)0.0450.0650.047EfficiencyBI319430386Compared to Ex4 (%)100135121LifespanCompared to Ex1 (%)—6090 Referring to Table 3 andFIG.9, it can be seen that, the lifespan of the ninth experimental example, which corresponds to the second embodiment of the present invention, is 90% of that of the first experimental example Ex1, i.e., is similar to that of a fluorescence stack. In addition, the CIEy color coordinate value thereof is 0.047, which is color purity in proportion to the fluorescence stack. This means that the blue reproduction rate of the display device is high. In addition, the efficiency thereof expressed by blue index BI is 385, which is 1.74 times 220.8 of the first experimental example Ex1. It is possible to reduce driving voltage due to increased efficiency thereof. For example, in the first experimental example Ex1 and the ninth experimental example Ex9, times at which luminance becomes 95% of the initial luminance at the same current density are measured in order to compare relative lifespan. When driving times of the ninth experimental example Ex9 and the first experimental example Ex1 at the same luminance are measured, the lifespan of the ninth experimental example Ex9 is 1.57 (1.74*0.9) times that of the first experimental example Ex1, and therefore a meaningful result can be expected in terms of lifespan when an actual display device is realized so as to have the structure of the light-emitting device according to the second embodiment of the present invention. Hereinafter, a light-emitting display device according to one or more embodiments of the present invention will be described in connection with the structure of a thin film transistor on a substrate100. FIG.10is a sectional view showing a light-emitting display device according to an embodiment of the present invention. The structure of a thin film transistor connected to an anode110of each subpixel in the light-emitting display device will be described with reference toFIG.10. Referring toFIG.10, a buffer layer105is provided on a substrate100, and first and second semiconductor layers1110and1111are provided on the buffer layer105. The buffer layer105functions to prevent impurities remaining in the substrate100from being introduced into the first and second semiconductor layers1110and1111. Each of the first and second semiconductor layers1110and1111can be an amorphous or crystalline silicon semiconductor layer or a transparent oxide semiconductor layer. Opposite sides of the first semiconductor layer1110connected to a source electrode1140and a drain electrode1160can be regions into which impurities are injected. An intrinsic region between the regions of the first semiconductor layer1110into which the impurities are injected can function as a channel region. Each of the first and second semiconductor layers1110and1111can include at least one of an oxide semiconductor layer, a polysilicon layer, and an amorphous silicon layer. The second semiconductor layer1111can be located overlapping storage electrodes1121and1141to be formed thereon. This can be used as an auxiliary storage electrode configured to increase the capacity of a storage capacitor in the case in which impurities are injected. Depending on circumstances, the second semiconductor layer1111can be omitted. A gate dielectric layer106is provided so as to cover the first and second semiconductor layers1110and1111, and a gate electrode1120and a first storage electrode1121are formed so as to overlap the intrinsic region of the first semiconductor layer1110and the second semiconductor layer1111. A first interlayer dielectric film107is provided so as to cover the first and second semiconductor layers1110and1111, the gate electrode1120, and the first storage electrode1121.1110, the first interlayer dielectric film107and the gate dielectric layer106are selectively removed to form contact holes, and the source electrode1140and the drain electrode1160are connected to the first semiconductor layer1110through the contact holes. In the same process, a second storage electrode1141is formed on the first interlayer dielectric film107overlapping the first storage electrode1121. Here, a first thin film transistor TFT for driving an organic light-emitting device provided in an emission unit E includes a first semiconductor layer1110, a gate electrode1120having a channel region overlapping therewith, and a source electrode1140and a drain electrode1160connected to opposite sides of the first semiconductor layer1110, which are sequentially disposed from below. In addition, a storage capacitor STC includes first and second storage electrodes1121and1141overlapping each other in the state in which the first interlayer dielectric film107is interposed therebetween. A second interlayer dielectric film108is formed so as to cover the thin film transistor TFT and the storage capacitor STC. Here, each of the thin film transistor TFT and the storage capacitor STC includes shading metal layers, which are disposed so as not to overlap a transmission unit T/E and thus can be disposed so as to overlap the emission unit E (RE and BE) or to overlap a bank150formation portion. Here, the bank150can be located between the transmission unit T/E and the emission unit E or between a red emission region RE and a blue emission region BE, which are spaced apart from each other, in the emission unit E. In the emission unit E, the anode110prevents the metal layers disposed thereunder from being visible. At a portion at which the bank150is located, a thick bank150can be disposed to prevent visibility of a lower construction. Meanwhile, a planarization film109is further formed so as to planarize the second interlayer dielectric film108while covering the second interlayer dielectric film. The planarization film109and the second interlayer dielectric film108are selectively removed to form a connection portion CT1, via which the thin film transistor TFT and the anode110can be connected to each other. InFIG.10, there is shown a two-layer structure including a reflective anode1101and a transparent anode1102. Alternatively, transparent anodes can be provided in the state in which a reflective anode is interposed therebetween. For example, the reflective anode of the anode110is made of a reflective metal, such as aluminum, an aluminum alloy, silver, or a silver alloy. In order to improve reflection efficiency, the reflective anode can be made of an alloy, such as APC (Ag—Pd—Cu). In addition, the cathode170, which is opposite the anode110, can be made of reflective and transmissive metal, such as a magnesium alloy, a silver alloy, silver, magnesium, or MgAg. Depending on circumstances, the cathode can be made of a transparent metal, such as indium tin oxide (ITO) or indium zinc oxide (IZO). In the light-emitting display device according to the present invention, light exits through the cathode170. A capping layer180can be further provided on the cathode170ofFIG.3or8in order to increase the exit amount of light. An organic stack OS between the anode110and the cathode170can include a plurality of stacks, in which particularly emissive layers of a first stack and a second stack in a blue subpixel B-SP are different from each other, as described with reference toFIGS.1to3,7, and8. The organic stack ofFIG.10has a construction common to the emission unit E and the bank150of each subpixel. In the blue subpixel B-SP, the green subpixel G-SP, and the red subpixel R-SP, which emit different colors, at least the emissive layers are patterned in each emission unit so as to be separated from each other. Meanwhile, the substrate100and the thin film transistor array formed on the substrate100can be referred to as a thin film transistor array substrate. In the light-emitting device according to one or more embodiments of the present invention, dopant ingredients used as emissive materials of the emissive layers are different from each other in a structure in which the same color-based light (or the same color light) is emitted through a plurality of stacks, whereby both efficiency and lifespan of the light-emitting device are improved. Particularly, in the case in which the emissive layers include the same fluorescence or phosphorescent dopants in a plural stack structure, a decrease in efficiency can be caused in fluorescence emission and a decrease in lifespan is caused in phosphorescence emission. However, the embodiments of the present invention are capable of solving or addressing this limitation. In addition, it can be difficult to increase the lifespan of a blue light-emitting device. The first stack includes a fluorescent dopant made of a single emissive material, and the second stack includes a non-fluorescent dopant, such as a phosphorescent dopant or a thermally activated delayed fluorescence dopant, together with a fluorescent dopant, whereby it is possible to improve efficiency with a predetermined lifespan or more in the second stack. In particular, the second stack is near the cathode, whereby the supply of electrons is faster than in the first stack. In the emissive layer of the second stack, action of a triplet exciton is activated, whereby it is possible to improve efficiency. In subpixels other than the blue subpixel, phosphorescent emissive layers are provided in a plurality of stacks. Consequently, phosphorescence emission is achieved with high efficiency in the red and green subpixels, and the lifespan stabilized to red and green levels is maintained in the blue subpixel, whereby application as a display device is advantageous. To this end, the light-emitting display device according to one or more emboidments of the present invention includes a substrate having a plurality of subpixels, an anode provided at each of the plurality of subpixels, a cathode provided over the plurality of subpixels, the cathode being opposite the anode, a charge generation layer provided between the anode and the cathode, a first stack provided between the anode and the charge generation layer, and a second stack provided between the charge generation layer and the cathode, the second stack overlapping the first stack, wherein at least one of the subpixels includes a first emissive layer having a first host and a first fluorescent dopant in the first stack and a second emissive layer configured to emit the same color-based light (or the same color light) as the first emissive layer in the second stack, the second emissive layer at least further having a non-fluorescent dopant, compared to the first emissive layer. The first emissive layer can lack the non-fluorescent dopant. The non-fluorescent dopant can be a phosphorescent dopant or thermally activated delayed fluorescence (TADF) dopant. The first emissive layer can be a single layer, and the second emissive layer can include a first sub emissive layer having a second host and a second fluorescent dopant and a second sub emissive layer having a third host and a non-fluorescent dopant. The non-fluorescent dopant can have an emission peak of a longer wavelength by 1 nm or more to 30 nm or less than the emission peak of the fluorescent dopant. The plurality of subpixels can include a blue subpixel, a green subpixel, and a red subpixel, and the first emissive layer and the second emissive layer can be included in the blue subpixel. Only the blue subpixel can further include an electron blocking layer in at least one of the first emissive layer and the second emissive layer. The first stack can further include a first common layer disposed under the first emissive layer and a second common layer disposed on the first emissive layer. The second stack can further include a third common layer disposed under the second emissive layer and a fourth common layer disposed on the second emissive layer. The first to fourth common layers can extend to the red subpixel and the green subpixel. The red subpixel can have a first red emissive layer and a second red emissive layer, between which the charge generation layer is interposed, the first red emissive layer and the second red emissive layer having the same red dopants. The green subpixel can have a first green emissive layer and a second green emissive layer, between which the charge generation layer is interposed, the first green emissive layer and the second green emissive layer having the same green dopants. The first red emissive layer and the first green emissive layer can be disposed so as to have the same vertical distance from the first emissive layer with respect to the charge generation layer, and the second red emissive layer and the second green emissive layer can be disposed so as to have the same vertical distance from the second emissive layer with respect to the cathode. The thickness of the first emissive layer can be less than the thickness of each of the first red emissive layer and the first green emissive layer, and the sum of the thicknesses of the first and second sub emissive layers can be less than the thickness of each of the second red emissive layer and the second green emissive layer. A capping layer can be further included on the cathode, and light emitted from the first and second emissive layers can exit through the cathode and the capping layer. In addition, a light-emitting display device according to another embodiment of the present invention includes a substrate having first to third subpixels, an anode provided at each of the first to third subpixels, a cathode provided over the first to third subpixels, the cathode being opposite the anode, a charge generation layer provided between the anode and the cathode, a first emissive layer located between the anode and the charge generation layer in the first subpixel, the first emissive layer having a first host and a first fluorescent dopant, a first sub emissive layer located between the charge generation layer and the cathode in the first subpixel, the first sub emissive layer having a second host and a second fluorescent dopant, and a second sub emissive layer abutting the first sub emissive layer, the second sub emissive layer having a third host and a non-fluorescent dopant, wherein each of the first fluorescent dopant, the second fluorescent dopant, and the non-fluorescent dopant has an emission peak at a wavelength of 435 nm to 490 nm. The non-fluorescent dopant nfd can be a phosphorescent dopant or a thermally activated delayed fluorescence (TADF) dopant. The sum of thicknesses of the first and second sub emissive layers can be equal to the thickness of the first emissive layer or can be different from the thickness of the first emissive layer by 50{acute over (Å)} or less. The second subpixel can have third and fourth emissive layers provided in the state in which the charge generation layer is interposed therebetween, each of the third and fourth emissive layers having an emission peak at a wavelength of 510 nm to 590 nm. The third subpixel can have fifth and sixth emissive layers provided in the state in which the charge generation layer is interposed therebetween, each of the fifth and sixth emissive layers having an emission peak at a wavelength of 600 nm to 650 nm. Each of the third to sixth emissive layers can have a host and a phosphorescent dopant. In addition, a light-emitting device according to another embodiment of the present invention includes an anode and a cathode opposite each other, a charge generation layer provided between the anode and the cathode, a first stack provided between the anode and the charge generation layer, the first stack including a first emissive layer having a first dopant and a first fluorescent dopant, and a second stack provided between the charge generation layer and the cathode, the second stack overlapping the first stack, the second stack including a second emissive layer configured to emit the same color-based light (or the same color light) as the first emissive layer, the second emissive layer at least further having a non-fluorescent dopant, compared to the first emissive layer. The first emissive layer can lack the non-fluorescent dopant. The non-fluorescent dopant can be a phosphorescent dopant or thermally activated delayed fluorescence (TADF) dopant. The first emissive layer can be a single layer, and the second emissive layer can include a first sub emissive layer having a second host and a second fluorescent dopant and a second sub emissive layer having a third host and a non-fluorescent dopant. As is apparent from the above description, a light-emitting device according to one or more embodiments of the present invention and a light-emitting display device including the same have at least the following effects and/or advantages. First, in the light-emitting device according to one or more embodiments of the present invention, dopant ingredients used as emissive materials of emissive layers are different from each other in a structure in which the same color-based light (or the same color light) is emitted through a plurality of stacks, whereby both efficiency and lifespan of the light-emitting device are improved. Particularly, in the case in which the emissive layers include the same fluorescence or phosphorescent dopants in a plural stack structure, a decrease in efficiency is caused in fluorescence emission and a decrease in lifespan is caused in phosphorescence emission. However, the present invention is capable of address this limitation effectively. Second, it can be difficult to increase the lifespan of particularly a blue light-emitting device. To address, in the embodiments of the present invention, a first stack includes a fluorescent dopant made of a single emissive material, and a second stack includes a non-fluorescent dopant, such as a phosphorescent dopant or a thermally activated delayed fluorescence dopant, together with a fluorescent dopant, whereby it is possible to improve efficiency with a predetermined lifespan or more in the second stack. In particular, the second stack is near a cathode, whereby the supply of electrons is faster than in the first stack. In the emissive layer of the second stack, action of a triplet exciton is activated, whereby it is possible to improve efficiency. Third, in the subpixels other than the blue subpixels, phosphorescent emissive layers are provided in a plurality of stacks. Consequently, phosphorescence emission is achieved with high efficiency in the red and green subpixels, and the lifespan stabilized to red and green levels is maintained in the blue subpixel, whereby such configuration is advantageous to be used in a display device. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the inventions. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents. | 66,511 |
11943986 | DETAILED DESCRIPTION OF THE EMBODIMENTS Exemplary embodiments will be described in detail here, and examples thereof are illustrated in the accompanying figures. When the following description refers to the accompanying figures, unless otherwise indicated, same reference signs in different figures designate same or similar elements. The implementation manners described in the following exemplary embodiments do not represent all implementation manners consistent with the present disclosure. Rather, they are merely examples of devices consistent with some aspects of the disclosure as defined in the appended claims. In smart electronic devices such as mobile phones and tablet computers, it is necessary to integrate photosensitive devices such as front-facing cameras, light sensors, etc. Therefore, in related technologies, transparent display screens are provided on the electronic devices, and the photosensitive devices are disposed under the transparent display screens, thus full-screen display of the electronic devices are achieved while guaranteeing proper operations of the photosensitive devices. In order to increase transparency of the transparent display screen, a pixel density of the transparent display screen is generally made lower than a pixel density of the non-transparent display screen. However, the inventors of the present disclosure found that images may be deformed in a case the electronic devices display, which will affect the user experience. To solve the above-mentioned problems, embodiments of the present disclosure provide a display substrate, a display panel and a display device, which can solve the above-mentioned problem well. The display substrate, the display panel, and the display device according to the embodiments of the present disclosure will be described in detail hereinafter with reference to the accompanying figures. In the case of no interference, features of following embodiments and implementations may be supplemented to each other or combined with each other. Embodiments of the present disclosure provide a display substrate. Referring toFIG.1andFIG.2, a display region of a display substrate100includes a first display region10and a second display region20, and a transmittance of the first display region10is greater than a transmittance of the second display region20. The display substrate100may further include a substrate. Referring toFIG.3,FIG.4, andFIG.7, a plurality of first pixel units11are provided in the first display region10, and the first pixel units11include first organic light-emitting diode (OLED) pixels111,112, and113of n colors, for example, the first OLED pixels111,112, and113respectively correspond to a different color. Referring toFIG.11, a plurality of second pixel units21are provided in the second display region20, and the second pixel units21include second OLED pixels211,212, and213of n colors, for example, the second OLED pixels211,212, and213respectively correspond to different colors. Where, n is a natural number not less than 3. The first OLED pixels and the second OLED pixels are disposed on the substrate. Referring again toFIG.4andFIG.7, the first OLED pixel111includes at least two first sub-pixels101arranged at intervals in a first direction. Similarly, the first OLED pixel112includes at least two first sub-pixels103arranged at intervals in the first direction, and the first OLED pixel113includes at least two first sub-pixels105arranged at intervals in the first direction. The first sub-pixels101,103,105that are adjacent to each other and belong to different first OLED pixels (for example, corresponding to different colors) are arranged at intervals in a second direction which intersects the first direction. Each of the first sub-pixels101,103,105include a first electrode block, a first light-emitting structure block provided on the first electrode block, and a second electrode provided on the first light-emitting structure block, and first electrode blocks (for example, corresponding to the same color) of two adjacent first sub-pixels101of the same first OLED pixel111are electrically connected. Similarly, first electrode blocks of two adjacent first sub-pixels103of the same first OLED pixel112are electrically connected, and first electrodes of two adjacent first sub-pixels105of the same first OLED pixel113are electrically connected. A ratio of a first size of the first pixel unit11to a second size of the first pixel unit11and a ratio of a first size of the second pixel unit21to a second size of the second pixel unit21are substantially the same. The first size is a size of the pixel unit in the first direction, and the second size is a size of the pixel unit in the second direction, wherein the first direction intersects the second direction. That is, the first size of the first pixel unit11is a size of the first pixel unit11in the first direction, and the second size of the first pixel unit11is a size of the first pixel unit11in the second direction. The first size of the second pixel unit21is a size of the second pixel unit21in the first direction, and the second size of the second pixel unit21is a size of the second pixel unit21in the second direction. In the display substrate according to the embodiments of the present disclosure, transmittance of the first display region10is greater than transmittance of the second display region20, and photosensitive devices may be disposed under the first display region10to achieve full-screen display of the display substrate while ensuring proper operations of the photosensitive device. The first OLED pixel includes at least two first sub-pixels, and in a same first OLED pixel, the first electrode blocks of two adjacent first sub-pixels are electrically connected, then only one of the first electrode blocks of the first sub-pixels of the same first OLED pixel is required to be connected to a signal line or a pixel circuit, which can reduce complexity of wiring and complexity in structure of the first display region10, thereby reducing diffraction of external light in a case passing through the first display region10. Thus, influence of diffraction of external light on the photosensitive devices disposed under the first display region10is reduced. At the same time, the ratio of the first size of the first pixel unit11to the second size of the first pixel unit11and the ratio of the first size of the second pixel unit21to the second size of the second pixel unit21are substantially the same, then shapes of the first pixel unit21and the second pixel unit22are similar to each other, thus probability of image deformation during display by the display substrate100due to large difference in the shapes of the first pixel unit and the second pixel unit is reduced, and display effect of the display substrate100is improved, thereby enhancing the user experience. In the embodiment of the present disclosure, the ratio of the first size of the first pixel unit11to the second size of the first pixel unit11is the first ratio, and the ratio of the first size of the second pixel unit21to the second size of the second pixel unit21is the second ratio. That the first ratio and the second ratio are substantially the same means that the first ratio and the second ratio are equal to each other, or difference between the first ratio and the second ratio is within a specified range. In a case that the first ratio of the first pixel unit11and the second ratio of the second pixel unit21are the same, the first size of the first pixel unit11and the first size of the second pixel unit21may be the same or different. Typically, an area of the first pixel unit11is greater than an area of the second pixel unit21, that is, the first size of the first pixel unit11is greater than the first size of the second pixel unit21, and the second size of the first pixel unit is greater than the second size of the second pixel unit21. In the embodiment of the present disclosure, at least two first sub-pixels of the same first OLED pixel are arranged at intervals in the first direction, which means that at least two first sub-pixels of the same first OLED pixel are generally arranged in the first direction. Axes of the at least two first sub-pixels of the same first OLED pixel in the first direction may coincide with each other, or may not coincide with each other. For example, as illustrated inFIGS.4and7, a plurality of first sub-pixels of the same first OLED pixel are staggered in the first direction, which is also considered as that the plurality of first sub-pixels of the same first OLED pixel are arranged at intervals in the first direction. That the adjacent first sub-pixels belonging to different first OLED pixels are arranged at intervals in the second direction may include two cases. In the first case, referring toFIG.7, the n first OLED pixels in the same first pixel unit11are arranged at intervals in the second direction, and the first sub-pixels in the same first OLED pixel are all disposed at a same side of another first OLED pixel (for example, an adjacent first OLED pixel). In such a case, for adjacent different first OLED pixels, first sub-pixels thereof are arranged at intervals in the second direction. For example, the first sub-pixels103in the first OLED pixel112inFIG.7are all disposed on the same side of the first OLED pixel113. In the second case, referring toFIG.4, among the n first OLED pixels in the same first pixel unit11, for two adjacent first OLED pixels, a part of the first sub-pixels of one of the first OLED pixel are disposed on one side of another first OLED pixel (for example, an adjacent first OLED pixel), and another part of the first sub-pixels are disposed on the other side of the other first OLED pixel. In such a case, the first sub-pixels belonging to two adjacent first OLED pixels are arranged at intervals in the second direction. For example, a part of the first sub-pixels103of the first OLED pixel112inFIG.4is disposed on the upper side of the first OLED pixel113, and another part of the first sub-pixels103of the first OLED pixel112is disposed on the lower side of the first OLED pixel113, and the first sub-pixel103and first sub-pixel105that are adjacent to each other are arranged at intervals in the second direction. The size of the first pixel unit11in the first direction refers to the maximum size of the first pixel unit11in the first direction, and the size of the first pixel unit11in the second direction refers to the maximum size of the first pixel unit11in the second direction. The size of the second pixel unit21in the first direction refers to the maximum size of the second pixel unit21in the first direction, and the size of the second pixel unit21in the second direction refers to the maximum size of the second pixel unit21in the second direction. In an embodiment of the present disclosure, the first direction and the second direction may be perpendicular to each other. The first direction may be a row direction and the second direction may be a column direction; or, the first direction may be a column direction, and the second direction may be a row direction. Wherein,FIGS.4to10only take the first direction as the row direction and the second direction as the column direction as examples for illustration, and other cases are not illustrated. In an embodiment of the present disclosure, arrangement manner of the first sub-pixels of the first pixel unit11is same as arrangement manner of the second OLED pixels of the second pixel unit. Wherein, the arrangement manner of pixels refers to a arrangement manner of pixels, such as arrangement order and arrangement position relationship of adjacent pixels of the same color, arrangement order and arrangement position relationship of pixels of different colors, etc. The arrangement manner of pixels is not necessarily related to the size of the pixel unit where the pixels are located. For example, the arrangement manner of the first sub-pixels of the first pixel unit11is same as the arrangement discipline of the second OLED pixels of the second pixel unit21, but the first size of the first pixel unit11is not same as the first size of the second pixel unit, and the second size of the first pixel unit11is not same as the second size of the second pixel unit21. By setting the arrangement manner of the first sub-pixels of the first pixel unit to be the same as the arrangement manner of the second OLED pixels of the second pixel unit, display effect of the first display region10and display effect of the second display region20are more uniform in a case the display substrate100displays, which facilitates to enhance the user experience. In an embodiment of the present disclosure, n=3, that is, the first pixel unit11includes first OLED pixels of three different colors, and the second pixel unit21includes second OLED pixels of three different colors. The three colors may be red, green and blue, or may be other colors. Embodiments of the present disclosure will be described hereinafter by taking the three colors being red, green and blue as an example, and cases that the three colors are other colors will not be introduced. Of course, in other embodiments of the present disclosure, n may also be greater than 3. Referring toFIG.4or7, the first pixel unit11includes a first red OLED pixel111, a first green OLED pixel112, and a first blue OLED pixel113, and the first red OLED pixel111includes at least two first red sub-pixels101, the first green OLED pixel112includes at least two first green sub-pixels103, and the first blue OLED pixel113includes at least two first blue sub-pixels105. Referring toFIG.11, the second pixel unit21may include a second red OLED pixel211, a second green OLED pixel212, and a second blue OLED pixel213. Further, the number of the second red OLED pixel211, the second green OLED pixel212, and the second blue OLED pixel213of the second pixel unit21is one respectively. In an embodiment of the present disclosure, the first sub-pixels of different colors in the first pixel unit11may be arranged in a Y shape, that is, arranged in a triangle; the second OLED pixels of different colors that are adjacent to each other in the second pixel unit21can be arranged in a Y shape, that is, arranged in a triangle. Referring toFIG.4, the first red sub-pixel101, the first green sub-pixel103, and the first blue sub-pixel105that are disposed adjacent to each other are arranged in a Y shape. Referring toFIG.11, the second red OLED pixel211, the second green OLED pixel212, and the second blue OLED pixel213that are disposed adjacent to each other are arranged in a Y shape. In this way, the adjacent second OLED pixels corresponding to the three colors in the second pixel unit21, as well as the adjacent first sub-pixels corresponding to the three colors in the first pixel unit11, are arranged in a triangle or Y shape, so that display effects of the first display region10and the second display region20are more uniform in a case the display substrate100displays, which facilitates to enhance the user experience. In addition, the first sub-pixels of the same color are distributed relatively uniformly, so that openings on a mask plate for manufacturing the first light-emitting structure of the first sub-pixels are distributed regularly, which reduces wrinkles of the mask plate; distribution of the second OLED pixels is relatively uniform, so that openings on a mask plate for manufacturing the second OLED pixels are distributed regularly, which can reduce wrinkles of the mask plate. Further, the first pixel unit11includes three first OLED pixels, and each first OLED pixel includes four first sub-pixels arranged at intervals in the first direction. Since the first pixel unit11includes three first OLED pixels of different colors, and the number of first OLED pixels in the first pixel unit11is three, the number of first OLED pixels of each color in the first pixel unit11is only one, that is, the first pixel unit11includes a first red OLED pixel111, a first green OLED pixel112, and a first blue OLED pixel113. Wherein, the first red OLED pixel111includes four first red sub-pixels101arranged at intervals in the first direction, and the first green OLED pixel112includes four first green sub-pixels103arranged at intervals in the first direction. And the first blue OLED pixel113includes four first blue sub-pixels105arranged at intervals in the first direction. With such an arrangement, an overall shape of the first pixel unit11is substantially rectangular, and the shape is relatively regular, images displayed in the first display region10is not prone to deform, and the quality of the image displayed in the first display region10may be improved. In addition, the shape of the first pixel unit11can be made similar to the shape of the second pixel unit21, so that the display effects of the first display region10and the second display region20are more uniform. At the same time, the first pixel unit11is provided to include three first OLED pixels, and each first OLED pixel includes four first sub-pixels arranged at intervals in the first direction, which makes the density of the first pixel units11in the first display region10greater under a premise that the overall shape of the first pixel unit11is substantially rectangular, which helps to improve the display effect of the first display region10. In other embodiments of the present disclosure, the first pixel unit11may further include six first OLED pixels, and each first OLED pixel includes six first sub-pixels arranged at intervals in the first direction. That is, the first pixel unit11includes two first red OLED pixels111, two first green OLED pixels112, and two first blue OLED pixels113. Wherein, each first red OLED pixel111includes six first red sub-pixels101arranged at intervals in the first direction, and each first green OLED pixel112includes six first green sub-pixels103arranged at intervals in the first direction, and each first blue OLED pixel113includes six first blue sub-pixels105arranged at intervals in the first direction. With such as arrangement, the overall shape of the first pixel unit11may also be substantially rectangular, which is relatively regular. Further, referring toFIG.5, the first sub-pixels of the first pixel unit11may comprise at least two first pixel groups110arranged in the second direction, and each of the first pixel groups110may be extended in the first direction. For two adjacent first pixel groups110, first sub-pixels of one first pixel group110may be arranged in a first order, and first sub-pixels in the other first pixel group110may be arranged in a second order, wherein the first order may be a first red sub-pixel101, a first green sub-pixel103, and a first blue sub-pixel105, and the second order may be a first blue sub-pixel105, a first green sub-pixel103and a first red sub-pixel101. The Y shape formed by the first sub-pixels which are arranged in the first order may be a shape formed by rotating the Y shape as illustrated inFIG.5by 90 degrees to the right, and the Y shape formed by the first sub-pixels which are arranged in the second order may be a shape formed by rotating the Y shape as illustrated inFIG.5by 90 degrees to the left. As illustrated inFIG.5, the first sub-pixels of the first pixel unit11includes two first pixel groups110. The first sub-pixels in one of the first pixel groups110are arranged in a first order, and the first sub-pixels of the other of the first pixel groups110are arranged in a second order. In other embodiments of the present disclosure, the first sub-pixels of the first pixel unit11may also include a first pixel group110having three or more first sub-pixels. With such an arrangement, colors of the adjacent first sub-pixels which are arranged in the first direction in the first display region10are all different, and the first sub-pixels of the same color are more uniformly distributed in the first display region10, which facilitates to improve the display effect of the first display region10. Further, for first sub-pixels of two adjacent first pixel groups110of the first pixel unit11, three first sub-pixels are arranged at intervals in the second direction, and colors of the three first sub-pixels arranged at intervals in the second direction are different. As illustrated inFIG.5, in two adjacent first pixel groups110, the three first sub-pixels arranged at intervals in the second direction are respectively a first red pixel101and a first green sub-pixel. The pixel103and the first blue sub-pixel105. With such an arrangement, the colors of the first sub-pixels adjacently arranged in the second direction in the first display region10are all different, and the distribution of the first sub-pixels of the same color is more uniform, which can prevent uneven color distribution in some area in a case the first display region10displays due to an adjacent distribution of the first sub-pixels of same colors in the first display region10, which in turn results in a bright bar of a single color in the region. Thus, the display effect of the first display region10may be improved. In an embodiment of the present disclosure, as illustrated inFIG.11, the second display region20may include a plurality of second pixel groups210arranged in the second direction, and each second pixel group210may be extended in the first direction. Each second pixel group210may include a second pixel unit21. For two adjacent second pixel groups210, the second OLED pixels of one second pixel group210are arranged in a third order, and the second OLED pixels of the other second pixel group210are arranged in a fourth order. The third order is a second red OLED pixel211, a second green OLED pixel212, a second blue OLED pixel213in sequence, and the fourth sequence is a second blue OLED pixel213, a second green OLED pixel212and the second red OLED pixel211in sequence. Wherein, the Y shape formed by the second OLED pixels arranged in the third order may be a shape formed by rotating the Y shape as illustrated inFIG.11by 90 degrees to the right, and the Y shape formed by the second OLED pixels arranged in the fourth order may be a shape formed by rotating the Y shape as illustrated inFIG.11by 90 degrees to the left. With such an arrangement, the colors of the second OLED pixels arranged adjacently in the first direction in the second display region20are all different, and distribution of the second OLED pixels of the same color in the second display region20are more uniform, which facilitates to improve the display effect of the second display region20. Further, for two adjacent second pixel groups210of the second pixel unit21, three second OLED pixels are arranged at intervals in the second direction, and as illustrated in FIG.11, in the two second pixel groups210, three second OLED pixels arranged at intervals in the second direction are a second red OLED pixel211, a second green OLED pixel212, and a second blue OLED pixel213in sequence. With such an arrangement, colors of the second OLED pixels arranged adjacently in the second direction in the second display region20are all different, so that distribution of the second OLED pixels of a same color are more uniform, which can prevent uneven color distribution in some area in a case the first display region20displays due to an adjacent distribution of the first sub-pixels of same colors in the first display region20, which in turn results in a bright bar of a single color in the region. Thus, the display effect of the first display region20may be improved. In another embodiment of the present disclosure, a plurality of first OLED pixels of the same first pixel unit11may be arranged in parallel in the second direction, and a plurality of second OLED pixels of the second pixel unit21may be arranged in parallel in the second direction. Referring toFIG.12, a first red OLED pixel111, a first green OLED pixel112, and a first blue OLED pixel113are arranged at intervals in the second direction in the first pixel unit11and side by side, thus, in the first pixel unit11, the first red sub-pixel101, the first green sub-pixel103and the first blue sub-pixel105are arranged at intervals in the second direction and side by side, for example, aligned in the second direction. Referring toFIG.13, in the second pixel unit, the second red OLED pixel211, the second green OLED pixel212, and the second blue OLED pixel213are arranged at intervals and side by side in the second direction. With such an arrangement, the arrangement discipline of the first sub-pixels of the first pixel unit is consistent with the arrangement discipline of the second OLED pixels of the second pixel unit. Further, for the plurality of first sub-pixels of the first pixel unit arranged in the second direction, colors of three adjacent first sub-pixels are different; and for the second OLED pixels of the second pixel unit arranged in the second direction, color of three adjacent second OLED pixels are different. Referring toFIG.12, for the plurality of first sub-pixels of the first pixel unit arranged in the second direction, three adjacent first sub-pixels are respectively a first red sub-pixel101, a second green sub-pixel103, and a first blue sub-pixel105. Referring toFIG.13, for the second OLED pixels of the second pixel unit arranged in the second direction, three adjacent second OLED pixels are respectively a second red OLED pixel211, a second green OLED pixel, and a second blue OLED pixel213. This arrangement can make that the arrangement discipline of the first sub-pixels in the first pixel unit and the arrange discipline of the second OLED pixels in the second pixel unit more similar, which helps to improve consistency of the display effects of the first display region10and the second display region20. Further, as illustrated inFIG.12, the first pixel unit11may further include a connecting bar, which connects the first electrode blocks of the first OLED pixels of the same color. Moreover, the same first OLED pixel includes a connecting portion connecting the first electrode blocks of two adjacent first sub-pixels. The connecting bar of the first OLED pixel may be disposed on the same layer as the first electrode block of the first OLED pixel, or may be arranged on a different layer from the first electrode block of the first OLED pixel. Regardless of the layer where the connecting bars are arranged, it is necessary to ensure that the connecting bars and the connection portions that are arranged on the same layer do not intersect with each other. Of course, in other embodiments of the present disclosure, the first sub-pixels of the first OLED pixel of the first pixel unit may be arranged in a manner different from the manners as illustrated inFIG.4,FIG.7, orFIG.12, and the second OLED pixels of the second pixel unit may be arranged in a manner different from the manners as illustrated inFIG.11andFIG.13, as long as it is ensured that the arrangement manner of the first sub-pixels of the first pixel unit is in consistent with the arrangement manner of the second OLED pixel of the second pixel unit. In one embodiment of the present disclosure, referring toFIG.4orFIG.7, for at least two first sub-pixels of the same first OLED pixel, two adjacent first sub-pixels may be arranged in a staggered manner in the second direction. That is, for the first electrode blocks of the first OLED pixels, the two adjacent first electrode blocks are arranged in a staggered manner in the second direction. This arrangement can further reduce diffraction effect due to external light passing through the first display region10fof the display substrate100. In an embodiment of the present disclosure, referring toFIG.4orFIG.7, for the at least two first sub-pixels of the same first OLED pixel, axes of two first sub-pixels, which are separated by a first sub-pixel, in the first direction coincide with each other. In this way, arrangement of the first light-emitting structure blocks of the same first OLED pixel is more regular, and distribution of openings on a mask for manufacturing the light-emitting structure blocks is relatively regular. In addition, a single mask can be used to evaporate the light-emitting structure blocks of the first display region and the second display region on the display substrate in a single evaporation process, which further reduces wrinkles of screening as the patterns on the mask is relatively uniform. In an embodiment of the present disclosure, referring toFIGS.4and7, the same first pixel unit may further include a plurality of connecting portions. For example, the first OLED pixel111may include at least one connecting portion102, and the first OLED pixel112may include at least one connecting portion104, the first OLED pixel113may include at least one connection portion106. In the same first OLED pixel, two adjacent first electrode blocks1011are electrically connected via a corresponding connecting portion. Wherein, adjacent first electrode blocks in the first red OLED pixel111are electrically connected via the connecting portion102, the adjacent first electrode blocks in the first green OLED pixel112are electrically connected via the connecting portion104, and the adjacent first electrode blocks in the blue OLED pixel113are electrically connected via the connecting portion106. In an embodiment of the present disclosure, the display substrate100further includes a substrate, and the first OLED pixel and the second OLED pixel are disposed on the substrate. In a case that the first sub-pixels of different colors in the first pixel unit11are arranged in a Y shape, projections of connecting portions of different first OLED pixels on the substrate may intersect. As illustrated inFIG.6, projections of the connecting portion102and the connecting portion104on the substrate intersect a projection of the connecting portion106on the substrate, respectively. In a case that there are a plurality of connecting portions102,104,106in the same first pixel unit, at least some of the connecting portions and its corresponding first electrode block1011are disposed on different layers respectively. In this way, short circuit due to crossing of different connecting portions may be avoided, which ensures proper operations of the first OLED pixels, and wiring of the connecting portions are more flexible. In addition, a size of the first electrode block1011is not affected by the connection portion which is disposed on a different layer from the first electrode block1011. In another embodiment of the present disclosure, as illustrated inFIG.8, in a case that the first OLED pixels of different colors in the first pixel unit11are arranged at intervals in the second direction, orthographic projections of connecting portions of different first OLED pixels on the substrate do no intersect with each other. As illustrated inFIG.7, orthographic projections of connecting portion102, connecting portion104and connecting portion106on the substrate do not intersect with each other. In this case, the connecting portions of each first OLED pixel may be disposed on the same layer or on different layers. The connecting portion and the corresponding first electrode block1011may be disposed on the same layer, or may be disposed on different layers. Preferably, the connecting portions of the first pixel unit11and the corresponding first electrode block1011may be disposed on the same layer respectively, and the first electrode block1011of the first pixel unit11and the connecting portions102,104,106may be formed in a single process, which may reduce the complexity of the preparation process to some extent. In an embodiment of the present disclosure, in a case that the connecting portion and its corresponding first electrode block1011are arranged on different layers, the connecting portion may be disposed under the corresponding first electrode block1011respectively. With such an arrangement, the connecting portion does not affect display of the first OLED pixel. Further, in a case that the first OLED pixel is driven in an active mode, the display substrate100further includes a pixel circuit for driving the first OLED pixel. The pixel circuit for the first OLED pixel may be a 1 transistor (1T) circuit, a 2 transistor and 1 capacitor (2T1C) circuit, a 3 transistor and 1 capacitor (3T1C) circuit, a 3 transistor and 2 capacitor (3T2C) circuit, a 7 transistor and 1 capacitor (7T1C) circuit, or a transistor and 2 capacitor (7T2C) circuit. Where T stands for transistors and C stands for capacitors. In a case that the connecting portion of the same first OLED pixel and the corresponding first electrode block1011are disposed on different layers, the connecting portion of the first OLED pixel may be disposed on the same layer as a gate electrode of the transistor, or disposed on the same layer as the upper plate of the capacitor, or disposed on the same layer as a source electrode of the transistor. In an embodiment of the present disclosure, the display substrate100further includes a substrate, the first OLED pixel and the second OLED pixel are disposed on the substrate, and in a case that there are a plurality of connecting portions of the same first pixel unit11, in a same first pixel unit, orthographic projections of the connecting portions on the substrate of which intersect with each other, may be disposed on different layers, and orthographic projections of connecting portions on the substrate of which do not intersect with each other, may be disposed on a same layer or on different layers. This arrangement can prevent proper operations of the first OLED pixel from being affected in a case the connecting portions whose orthographic projections on the substrate intersect with each other, are disposed on the same layer. Wherein, in a case that the connecting portions whose orthographic projections on the substrate intersect with each other are disposed on the same layer, these connecting portions may be formed in a single processing, thereby reducing the complexity of the manufacturing processing. In an embodiment of the present disclosure, in a case that there are a plurality of connecting portions of one first OLED pixel, the connecting portions of the first OLED pixel may be disposed on the same layer. With this arrangement, a plurality of connecting portions of the same first OLED pixel may be formed in a single processing step, which simplifies the complexity of the manufacturing processing. For example, a plurality of connecting portions102of the first red OLED pixel111are disposed on the same layer, a plurality of connecting portions104of the first green OLED pixel112are disposed on the same layer, and a plurality of connecting portions106of the first blue OLED pixel113are disposed on the same layer. In an embodiment of the present disclosure, in a case that the first sub-pixels of different colors of the first pixel unit11are arranged in a Y shape, referring toFIG.4, orthographic projections of the connecting portions102of the first red OELD pixel111on the substrate and orthographic projections of the connecting portions104of the first green OLED pixel112on the substrate do not intersect with each other, and the connecting portions102and the connecting portions104may be disposed on the same layer. Orthographic projections of the connecting portions106of the first blue OLED pixel113on the substrate, orthographic projections of the connecting portions102of the first red OLED pixel111on the substrate, and orthographic projections of the connecting portions104of the first green OLED pixel112on the substrate intersect with each other, the connecting portions106of the first blue OLED pixel113, the connecting portions102of the first red OLED pixel111and the connecting portions104of the first green OLED pixel112are disposed on different layers. Wherein, the connecting portions102of the first red OLED pixel111and the connecting portions104in the first green OLED pixel112may be respectively arranged on the same layer as the corresponding first electrode block1011, and the connecting portions106of the first blue OLED pixel113and their corresponding first electrode blocks1011are disposed on different layers. Of course, in other embodiments of the present disclosure, it is further possible that the connecting portion102of the first red OLED pixel111and the connecting portion104of the greed first OLED pixel112are disposed and their respective first electrode block1011are disposed on different layers, while the connecting portion106of the first blue OLED pixel113and its corresponding first electrode block1011are disposed on the same layer; alternatively, the connecting portion106of the first blue OLED pixel113, the connecting portion102of the first red OLED pixel111, and the connecting portion104of the first green OLED pixel112are disposed on different layers, and the connecting portions of each of the first OLED pixels of the three colors and their corresponding first electrode block1011are disposed on different layers. In an embodiment of the present disclosure, in a case that the connecting portion of the same first OLED pixel and its corresponding first electrode block1011are disposed on the same layer, a size of the connecting portion in a direction perpendicular to its extending direction is greater than 3 μm and is less than one half of the maximum size of the first electrode block1011. For example, the size of the connecting portion in the direction perpendicular to its extending direction is a size in a plane extending in the first direction and the second direction. By setting the size of the connecting portion in the direction perpendicular to its extension direction to be greater than 3 μm, resistance of the connecting portion may be made relatively smaller; by setting the size of the connecting portion in the direction perpendicular to its extending direction to be smaller than one half of the maximum size of the first electrode block1011, effect on the size of the first electrode block1011by providing the connecting portion is made less, and it is avoided that the size of the first electrode block1011is reduced due to a relative great size of the connecting portion, which in turn reduce effective light-emitting area of the first display region10. In an embodiment of the present disclosure, in a case that the first pixel unit11includes two or more first OLED pixels of same color, regarding the two or more first OLED pixels of the same color, first electrode blocks of different first OLED pixels are electrically connected, or the first electrode block of one first OLED pixel is electrically connected to the first electrode block of another first OLED pixel. Further, the first pixel unit may further be provided with a connecting bar. Regarding the first OLED pixels of a same color, the first electrode blocks of different first OLED pixels may be electrically connected via the connecting bar, or the first electrode block of one first OLED pixel is electrically connected to the first electrode block of the other first OLED pixel via the connecting bar. Referring toFIG.12, the first pixel unit11includes two first red OLED pixels111, two first green OLED pixels112and two first blue OLED pixels113. Wherein, the first electrode blocks of the two first red OLED pixels111are electrically connected via a connecting bar107, the first electrode blocks of the two first green OLED pixels112are electrically connected via a connecting bar108, and are electrically connected, and the first electrode block of the two first blue OLED pixels113are electrically connected via a connection part109. The connecting bar electrically connects the first electrode blocks of the two first OLED pixels of the same color, which can be achieved in the following two manners: a connecting portion of one first OLED pixel and a connecting portion of the other first OLED pixel are connected via the connecting bar; or, a first electrode block of one first OLED pixel is connected to a first electrode block of the other first OLED pixel via the connecting bar. With such an arrangement, in a case the first OLED pixel is actively driven, two first OLED pixels of same color may be driven by a same pixel circuit, which can reduce the number of pixel circuits, thereby reducing complexity of a structure of the display substrate. In an embodiment of the present disclosure, orthographic projection of the first electrode block1011on the substrate may include a first graphic unit or a plurality of first graphic units that are connected. Wherein, the first graphic unit includes a circle, an oval, a shape of dumbbell, a shape of gourd, or a rectangle. The shape of dumbbell refers to a shape of pattern formed by connecting two circles with two parallel lines between the two circles, wherein a distance between the two lines is less than a diameter of the two circles, and the shape of the gourd refers to a shape of pattern that is formed by connecting two circles directly. The first graphic unit as illustrated inFIGS.6and8is rectangular, the first graphic unit as illustrated inFIG.9is circular, and the first graphic unit as illustrated inFIG.10is dumbbell-shaped. In a case that the first graphic unit is circular, elliptical, dumbbell-shaped or gourd-shaped, the first graphic unit may change the periodic structure generated by diffraction, that is, change distribution of diffraction field, thereby reducing diffraction effect generated in a case that the external incident light passes through the first display region10, thereby ensuring that an image taken by the camera disposed under the first display region10has a higher definition. In an embodiment of the present disclosure, a projection of the first light-emitting structure block in the first display region10on the substrate may include a second graphic unit or a plurality of second graphic units that are connected, and the second graphic unit may be same as the first graphic unit, or may be different from the first graphic unit. The projection of the first light-emitting structure block disposed on the first electrode block1011on the substrate is different from the projection of the first electrode block1011on the substrate, so as to further reduce the diffraction effect generated by the light passing through the first displaying region10. In an embodiment of the present disclosure, the second graphic unit may include a circle, an oval, a dumbbell, a gourd or a rectangle. In a case that the second graphic unit is circular, elliptical, dumbbell-shaped or gourd-shaped, the shape of the second graphic unit can change the periodic structure that produces diffraction, that is, change distribution of the diffraction field, thereby further reducing diffraction effect that is generated by external light passing through the first display region10, and further ensuring that an image taken by the camera disposed below the first display region10has a higher definition. In an embodiment of the present disclosure, the first electrode block1011may be an anode, the second electrode may be a cathode, and the second electrode may be a plane electrode. In an embodiment of the present disclosure, a transmittance of the first electrode block1011and/or of the second electrode may be greater than or equal to 70%. Further, the transmittance of the first electrode block1011and/or of the second electrode may be greater than or equal to 90%, for example, the transmittance may be 90%, 95%, or the like. Such an arrangement can make the transmittance of the first display region10relatively great, so that the transmittance of the first display region10can meet requirements of the photosensitive device disposed below it on collecting light. In an embodiment of the present disclosure, material for the first electrode block1011may include at least one of indium tin oxide, indium zinc oxide, indium tin zinc oxide, silver-doped indium tin oxide, silver-doped indium zinc oxide or graphene. Preferably, the material for the first electrode block1011is silver-doped indium tin oxide or silver-doped indium zinc oxide, so as to resistance of the first electrode block1011while guaranteeing the high transmittance of the first display region10. In an embodiment of the present disclosure, material for the second electrode may include at least one of indium tin oxide, indium zinc oxide, silver-doped indium tin oxide, silver-doped indium zinc oxide, graphene, magnesium, silver, or aluminum. In an embodiment of the present disclosure, the material for the second electrode is silver-doped indium tin oxide or silver-doped indium zinc oxide, so as to reduce the resistance of the second electrode while guaranteeing the high transmittance of the first display region10. In an embodiment of the present disclosure, the first OLED pixel may be driven in a passive driving mode or an active driving mode. In a case that the first OLED pixel is driven in an active driving mode, each of the first OLED pixels is driven by a pixel circuit. In an embodiment of the present disclosure, referring toFIG.1, the first display region10may be contiguous to the second display region20, the first display region10may be at least partially surrounded by the second display region20, and in a case that the first OLED pixel is driven in an active driving mode, a pixel circuit for the first OLED pixel may be disposed in the second display region20. Such arrangement can reduce the complexity of the structure under the first OLED pixel in the first display region10, and can reduce the complexity of the wiring under the first OLED pixel in the first display region10, which helps to mitigate diffraction stacking generated by light passing through, thereby further improving quality of an image taken by the camera disposed under the first display region10. Further, the pixel circuit for the first OLED pixel may be disposed in an area of the second display region20adjacent to the first display region10. With this arrangement, the length of the wiring between the first electrode block of the first OLED pixel and its corresponding pixel circuit can be reduced. In another embodiment of the present disclosure, referring toFIG.2, the display area of the display substrate100may further include a transition display region30disposed between the first display region10and the second display region20. In the case that the OLED pixel is driven in an active driving mode, the pixel circuit for the first OLED pixel may be disposed in the transition display region30. This arrangement can further reduce the complexity of the structure under the first OLED pixel in the first display region10, reduce the complexity of the wiring under the first OLED pixel in the first display region10, and help to mitigate diffraction stacking generated by the light passing through, thereby further improving quality of an image taken by the camera disposed under the first display region10. Further, the pixel circuit for the first OLED pixel may be arranged in an area of the transition display region30adjacent to the first display region10. With this arrangement, a length of the wiring between the first electrode block of the first OLED pixel and its pixel circuit can be reduced. In an embodiment of the present disclosure, a plurality of third pixel units are provided in the transition display region30, and the density of the third pixel units may be equal to the density of the first pixel units in the first display region10. With this arrangement, display effects of the first display region10and the transition display region30are similar, and the diversification of the pixel unit density in the display region of the display substrate100can be reduced to a certain extent, which lower inconsistence in display effects of various areas of the display region due to the diversification of the pixel unit density. In another embodiment of the present disclosure, the density of the third pixel unit may be equal to the density of the second pixel unit. With this arrangement, display effects of the second display region20and the transition display region30are similar, and the diversification of the pixel unit density in the display region of the display substrate100can be reduced to a certain extent, which lower uniformity in display effects of various areas of the display region due to the diversification of the pixel unit density. In other embodiments of the present disclosure, alternatively, the density of the third pixel unit may be different from the density of the first pixel unit and the density of the second pixel unit, for example, it may be greater than the density of the first pixel unit and less than the density of the first pixel unit. In an embodiment of the present disclosure, the third pixel unit may include third OLED pixels of n colors, and n is a natural number not less than 3. Each of the third OLED pixels may include at least two third sub-pixels arranged at intervals in the first direction, and each of the at least two third sub-pixels may include a third electrode block, and a second light-emitting structure block disposed on the third electrode block, and a fourth electrode disposed on the second light-emitting structure block, wherein adjacent third electrode blocks of the same third OLED pixel are electrically connected. Further, a first size of the third pixel unit may be greater than the first size of the second pixel unit and less than the first size of the first pixel unit. With this arrangement, the first sizes of the pixel units in the first direction gradually transits from the first display region to the second display region, which helps to improve the display effect. In an embodiment of the present disclosure, the first electrode block of the first OLED pixel may be electrically connected to its pixel circuit via a transparent wiring. Since at least part of the transparent wiring is disposed in the first display region10, this arrangement may further improve the transmittance of the first display region10. Further, transmittance of the transparent wiring is greater than or equal to 50%. In some embodiments of the present disclosure, the transmittance of the transparent wiring may be greater than 70%, for example, 80%, 90%, etc., to further increase the transmittance of the first display region10. Further, material for the transparent wiring may include at least one of indium tin oxide, indium zinc oxide, silver-doped indium tin oxide, silver-doped indium zinc oxide, or graphene. In some embodiments of the present disclosure, the material for the transparent wiring is silver-doped indium tin oxide or silver-doped indium zinc oxide, so as to reduce the resistance of the transparent wiring while guaranteeing high transmittance of the transparent wiring. In an embodiment of the present disclosure, referring toFIG.14, a first pixel definition layer120may be further provided in the first display region10, and the first pixel definition layer120is disposed on the first electrode block1011, a plurality of pixel openings are provided in the first pixel definition layer120, and a plurality of first light-emitting structure114are disposed in the plurality of pixel openings in a one-to-one correspondence. The second OLED pixel includes a fifth electrode block2011, a third light-emitting structure block214disposed on the fifth electrode block2011, and a sixth electrode (not illustrated) disposed on the third light-emitting structure block214, a second pixel definition layer220may be further provided in the second display region20, the second pixel definition layer220is disposed on the fifth electrode block2011, and a plurality of second pixel openings are provided in the second pixel definition layer220, and a plurality of third light-emitting structure block214are disposed in the plurality of the second pixel openings in a one-to-one correspondence. Further, transmittance of the first pixel definition layer120is greater than transmittance of the second pixel definition layer220. With this arrangement, the transmittance of the first display region10may be increased, and the imaging effect of the camera disposed under the first display region10can be improved. Further, transmittance of the first pixel definition layer120is greater than 70%. Furthermore, the transmittance of the first pixel definition layer120is greater than 90%, for example, it may be 90%, 92%, 95%, etc., so that the first display region10may have a better light transmission. Further, material for the first pixel definition layer120may include polyorganosiloxane. This can ensure the high transmittance of the first pixel definition layer. Material for the second pixel definition layer220may include at least one of polyvinylpyridine or photosensitive polyimide. In this way, properties of the second pixel definition layer220are relatively stable and the service life of the second pixel definition layer220is relatively long. Embodiments of the present disclosure further provide a display substrate. Referring toFIGS.1and2, a display region of the display substrate100includes a first display region10and a second display region20. Transmittance of the first display region10is greater than light transmittance of the second display region20. Referring toFIGS.15and16, a plurality of first pixel units11are provided in the first display region10, and the first pixel units11include first OLED pixels111,112,113of n colors; a plurality of second pixel units21are provided in the second display region20, and the second pixel units21include second OLED pixels211,212, and213of n colors, and n is a natural number not less than 3. A density of the first pixel unit11is less than a density of the second pixel unit21. A ratio of a first size of the first pixel unit11to a second size of the first pixel unit11and a ratio of a first size of the second pixel unit21to a second size of the second pixel unit21are substantially the same. The first size is a size of the pixel unit in the first direction, the second size is a size of the pixel unit in the second direction, and the first direction intersects the second direction. That is, the first size of the first pixel unit11is the size of the first pixel unit11in the first direction, and the second size of the first pixel unit11is the size of the first pixel unit11in the second direction; the first size of the second pixel unit21is the size of the second pixel unit21in the first direction, and the second size of the second pixel unit21is the size of the second pixel unit21in the second direction. In the display substrate according to the embodiment of the present disclosure, light transmittance of the first display region10is greater than light transmittance of the second display region20, thus a photosensitive device may be disposed under the first display region10to achieve full-screen display of the display substrate while guaranteeing proper operations of the photosensitive device. And meanwhile, the ratio of the first size to the second size of the first pixel unit11and the ratio of the first size to the second size of the second pixel unit21are substantially the same, then the shapes of the first pixel unit and the second pixel unit are similar, which can reduce probability of image deformation of the display substrate100during display due to a large difference in the shapes of the first pixel unit and the second pixel unit, thereby improving display effect of the display substrate100, and enhancing the user experience. In an embodiment of the present disclosure, n=3, that is, the first pixel unit11includes first OLED pixels of three different colors, and the second pixel unit21includes second OLED pixels of three different colors. The three colors may be red, green and blue, or other colors. In the following, description will be given by taking the three colors being red, green, and blue as examples, and any other combination of colors will not be elaborated herein. Of course, in other embodiments of the present disclosure, n may also be greater than 3. In an embodiment of the present disclosure, an arrangement manner of the first OLED pixels in the first pixel unit11is consistent with an arrangement manner of the second OLED pixels in the second pixel unit21. By setting the arrangement manner of the first OLED pixels in the first pixel unit to be the same as the arrangement discipline of the second OLED pixels in the second pixel unit, display effects of the first display region10and of the second display of the display substrate100may be made more uniform during display, which helps to enhance the user experience. In an embodiment of the present disclosure, adjacent first OLED pixels of different colors in the first pixel unit11may be disposed in a Y shape, and adjacent second OLED pixels of different colors in the second pixel unit21may be disposed in a Y shape. Referring toFIG.15, the first red OLED pixel111, the first green OLED pixel112, and the first blue OLED pixel113of the first pixel unit11are arranged in a Y shape; the second red OLED pixel211, the second green OLED pixel212, and the second blue OLED pixel213of the second pixel unit are arranged in a Y shape. The arrangement order and positional relationship of the first OLED pixels in the first pixel unit11are similar to the arrangement order and positional relationship of the first sub-pixels as illustrated inFIG.4, and the arrangement of the second OLED pixels in the second pixel unit21are similar to the arrangement order and positional relationship of the second OLED pixels as illustrated inFIG.11. For more details, please refer to the above-mentioned related description, and will not be elaborated herein. In another embodiment of the present disclosure, referring toFIG.16, a plurality of first OLED pixels of one first pixel unit11are arranged side by side in the second direction; a plurality of second OLED pixels of one second pixel unit21are arranged side by side in the second direction. The arrangement order and positional relationship of the first OLED pixels in the first pixel unit11are similar to the arrangement order and positional relationship of the first sub-pixels as illustrated inFIG.12, and the arrangement order and position relationship of the second OLED pixels in the second pixel unit12are similar to the arrangement order and position relationship of the second OLED pixels as illustrated inFIG.13. For specific details, please refer to the above-mentioned related description, and will not be elaborated herein. In an embodiment of the present disclosure, the first OLED pixel may be driven in an active driving mode, a pixel circuit is provided in the first display region10for the first OLED pixel in a one-to-one correspondence. And for the pixel circuits for respective first OLED pixels in the first display region, pixel circuits of at least part of the first OELD pixels are provided in the first display region. Further, the pixel circuit for the first OLED pixel is a 1T circuit, or a 2T1C circuit, or a 3T1C circuit, or a 3T2C circuit, or a 7T1C circuit, or a 7T2C circuit. Where T represents a transistor, and C represents a capacitor, that is, the pixel circuit for the first OLED pixel includes a transistor and/or a capacitor. In an embodiment of the present disclosure, in the pixel circuit for the first OLED pixel, the transistors and/or the capacitors of the pixel circuit disposed in the first display region10may be made of a transparent conductive material. In this way, light transmittance of the first display region10may be improved. Further, light transmittance of the transparent conductive material is greater than 70%. Furthermore, the light transmittance of the transparent conductive material may be greater than or equal to 90%, for example, the light transmittance may be 90%, 95%, etc. Such an arrangement can make the light transmittance of the first display region10relatively large, so that the light transmittance of the first display region10can meet requirements of the photosensitive device disposed below it on collecting light. In an embodiment of the present disclosure, the transparent conductive material may include at least one of indium tin oxide, indium zinc oxide, silver-doped indium tin oxide, silver-doped indium zinc oxide, or graphene. In some embodiments of the present disclosure, the transparent conductive material may be silver-doped indium tin oxide or silver-doped indium zinc oxide to reduce the resistance of transistors and/or capacitors on the basis of ensuring high light transmittance of the first display region10. In another embodiment of the present disclosure, in the pixel circuit of the first OLED pixel, the transistors and/or capacitors of the pixel circuit disposed in the first display region10are made of opaque conductive materials. The opaque conductive material may be molybdenum, copper, aluminum, etc., which can make the resistance of transistors and capacitors relatively small. Further, the opaque conductive material may be covered with a light-shielding material. The light-shielding material disposed on the transistor and the capacitor may block external light from being incident on the transistor and the capacitor, thereby prevent the properties of the transistor and the capacitor from being affected by external light. The light-shielding material may include at least one of silver oxide or vinyl. In an embodiment of the present disclosure, the first OLED pixel may include a first electrode block, a light-emitting structure block disposed on the first electrode block, and a second electrode disposed on the light-emitting structure block. The second OLED pixel may include a fifth electrode block, a third light-emitting structure block disposed on the fifth electrode block, and a sixth electrode disposed on the third light-emitting structure block. The first display region10may further be provided with a first pixel definition layer, the first pixel definition layer is disposed on the first electrode block, and a plurality of first pixel openings are provided in the first pixel definition layer, and a plurality of first light-emitting structure blocks are disposed in the plurality of first pixel openings in a one-to-one correspondence. A second pixel definition layer may be further provided in the second display region20, the second pixel definition layer is disposed on the fifth electrode block, and a plurality of second pixel openings are provided in the second pixel definition layer, and a plurality of the third light-emitting structure blocks are disposed in the plurality of second pixel openings in a one-to-one correspondence. Further, light transmittance of the first pixel definition layer is greater than light transmittance of the second pixel definition layer. With such an arrangement, the light transmittance of the first display region can be increased, thereby improving imaging effect of the camera disposed below the first display region. Further, light transmittance of the first pixel definition layer is greater than 70%. Furthermore, the light transmittance of the first pixel definition layer is greater than 90%, for example, it may be 90%, 92%, 95%, etc., so that the first display region10is made more transparent. Further, material for the first pixel definition layer may include polyorganosiloxane. This can ensure that the light transmittance of the first pixel definition layer is high. Material for the second pixel definition layer may include at least one of polyvinylpyridine and photosensitive polyimide. In this way, the properties of the second pixel definition layer are relatively stable and the service life of the second pixel definition layer is relatively long. In an embodiment of the present disclosure, the first direction and the second direction may be perpendicular to each other. The first direction may be a row direction and the second direction may be a column direction; or, the first direction may be a column direction, and the second direction may be a row direction. Wherein, the first direction as the row direction and the second direction as the column direction are just taken as examples for illustration inFIGS.15to16and other cases will not be illustrated. Embodiments of the present disclosure further provide a display panel. The display panel includes any of the above-mentioned display substrate100and an encapsulation structure. The encapsulation structure is disposed on a side of the display substrate100away from the substrate. In an embodiment of the present disclosure, the encapsulation structure may include a polarizer which covers at least the second display region20. Further, the polarizer does not cover the first display region10, and a photosensitive device that emits light or collects light passing through the first display region10may be disposed under the first display region10. The polarizer may diffuse light reflected by a surface of the display panel to improve the user experience; the polarizer is not provided in the first display region10so as to improve the light transmittance of the first display region10, thereby guaranteeing proper operations of the photosensitive device disposed under the first display region10. Embodiments of the present disclosure further provide a display device, which includes a device body and the display panel as described above. The device body has a device area, and the display panel covers the device body. Wherein, in a case that light transmittance of the first display region is greater than light transmittance of the second display region, the device area is located below the first display region, and the device area is provided with a photosensitive device that collects light passing through the first display region. The photosensitive device may include a camera and/or a light sensor. Other devices other than the photosensitive devices, such as gyroscopes or earpieces, may further be disposed in the device area. The device area may be a grooved area, and the first display region of the display panel may be provided in close contact with the grooved area, so that the photosensitive device may emit light or collect light passing through the first display region. The above-mentioned display device may be a digital device such as a mobile phone, a tablet, a palmtop computer, and an iPad. In the figures, sizes of the layers and the regions may be exaggerated for clarity of illustration. It should be understood that in a case an element or layer is referred to as being “on” another element or layer, it can be directly on the other element or intervening layers therebetween may be present. In addition, it will be understood that in a case an element or layer is referred to as being “under” another element or layer, it can be directly under the other element, or there may be more than one intervening layer or element. In addition, it is also understood that in a case a layer or element is referred to as being “between” two layers or two elements, it can be the only layer between the two layers or two elements, or more than one intervening layer may further be present. Similar reference signs indicate similar elements throughout. In this disclosure, the terms “first” and “second” are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance. The term “plurality” refers to two or more, unless specifically defined otherwise. After considering the specification and practicing the disclosure disclosed herein, those skilled in the art will easily think of other embodiments of the present disclosure. This disclosure is intended to cover any variations, applications, or adaptive changes of this disclosure. These variations, applications, or adaptive changes follow the general principles of this disclosure and include common knowledge or customary technical means in the technical field not disclosed in this disclosure. The description and embodiments are only regarded as exemplary, and the true scope and spirit of the disclosure are defined by the following claims. It should be understood that the present disclosure is not limited to the exact structure that has been described above and illustrated in the drawings, and various modifications and changes can be made without departing from its scope. The scope of the disclosure is only limited by the appended claims. | 68,752 |
11943987 | DETAILED DESCRIPTION OF THE EMBODIMENTS The embodiments herein will now be described more fully hereinafter with reference to the accompanying drawings. The embodiments may include different forms and should not be construed as limited to the descriptions thereof as set forth herein. Rather, these embodiments are provided so that this disclosure may be thorough and complete, and fully convey the scope of the disclosure to those skilled in the art. It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. The same reference numbers indicate the same components throughout the disclosure. In contrast, when an element is referred to as being “directly on” another element, there may be no intervening elements present. The word “over” or “on” means positioning on or below an object portion, and does not necessarily mean positioning on the upper side of the object portion based on a gravity direction. Spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the term “below” can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. It will be understood that, although the terms “first,” “second,” “third,” “fourth,” etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For instance, a first element discussed below could be termed one of a second element, a third element, and a fourth element without departing from the teachings herein. In the drawings, the size and thickness of each element may be arbitrarily illustrated for ease of description, but the disclosure may not be necessarily limited to those embodiments illustrated in the drawings. In the drawings, the thicknesses of layers, films, panels, regions, etc., may be exaggerated for clarity. Unless explicitly described to the contrary, the word “comprise” and variations such as “comprises” or “comprising” will be understood to imply the inclusion of stated elements but not the exclusion of any other elements. As used herein, the term “and/or” may include any and all combinations of one or more of the associated listed items. Expressions such as “at least one of,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list. As used herein, the term “and/or” may include any and all combinations of one or more of the associated listed items. Expressions such as “at least one of,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list. In a case that a certain embodiment may be implemented differently, a specific process order may be performed differently from the described order. For example, two consecutively described processes may be performed substantially at the same time or performed in an order opposite to the described order. “About” or “approximately” as used herein is inclusive of the stated value and means within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, considering the measurement in question and the error associated with measurement of the particular quantity (i.e., the limitations of the measurement system). For example, “about” may mean within one or more standard deviations, or within, for example, ±30%, 20%, or 5% of the stated value. It will be understood that the terms “first,” “second,” etc. may be used herein to describe various components, these components should not be limited by these terms. These terms may only be used to distinguish one component from another. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. In the embodiments hereinafter, it will be understood that when an element, an area, or a layer is referred to as being connected to another element, area, or layer, it can be directly or indirectly connected to the other element, area, or layer. For example, it will be understood in this description that when an element, an area, or a layer is referred to as being in contact with or being electrically connected to another element, area, or layer, it may be directly or indirectly in contact with or electrically connected to the other element, area, or layer. Further, the phrase “in a plan view” means when an object portion is viewed from above, and the phrase “in a cross-sectional view” means when a cross-section taken by vertically cutting an element portion is viewed from the side. Additionally, the terms “overlap” or “overlapped” mean that a first object may be above or below or to a side of a second object, and vice versa. Additionally, the term “overlap” may include layer, stack, face or facing, extending over, covering or partly covering or any other suitable term as would be appreciated and understood by those of ordinary skill in the art. The terms “face” and “facing” mean that a first element may directly or indirectly oppose a second element. In a case in which a third element intervenes between the first and second element, the first and second element may be understood as being indirectly opposed to one another, although still facing each other. When an element is described as ‘not overlapping’ or ‘to not overlap’ another element, this may include that the elements are spaced apart from each other, offset from each other, or set aside from each other or any other suitable term as would be appreciated and understood by those of ordinary skill in the art. When a layer, region, substrate, or area, is referred to as being “on” another layer, region, substrate, or area, it may be directly on the other region, substrate, or area, or intervening regions, substrates, or areas, may be present therebetween. Conversely, when a layer, region, substrate, or area, is referred to as being “directly on” another layer, region, substrate, or area, intervening layers, regions, substrates, or areas, may be absent therebetween. Further when a layer, region, substrate, or area, is referred to as being “below” another layer, region, substrate, or area, it may be directly below the other layer, region, substrate, or area, or intervening layers, regions, substrates, or areas, may be present therebetween. Conversely, when a layer, region, substrate, or area, is referred to as being “directly below” another layer, region, substrate, or area, intervening layers, regions, substrates, or areas, may be absent therebetween. Further, “over” or “on” may include positioning on or below an object and does not necessarily imply a direction based upon gravity. Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by those skilled in the art to which this invention pertains. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an ideal or excessively formal sense unless clearly defined in the description. FIG.1shows a perspective view of a display device according to an embodiment.FIG.2is a schematic cross-sectional view of a display device according to an embodiment, taken along line Xa-Xa′ ofFIG.1. Referring toFIGS.1and2, a display device1may be applied to a variety of electronic devices, e.g., small and medium electronic devices such as a tablet PC, a smartphone, a car navigation unit, a camera, a center information display (CID) provided in a vehicle, a wristwatch-type electronic device, a personal digital assistant (PDA), a portable multimedia player (PMP) and a game console, and medium and large electronic devices such as a television, an external billboard, a monitor, a personal computer and a laptop computer. Theas above may represent mere examples for applying the display device1, and thus one of ordinary skill in the art may recognize that the display device1may also be applied to other electronic devices without departing from the spirit and scope of the disclosure. The display device1may have a rectangular shape in plan view. The display device1may include two first sides extending in a first direction DR1and two second sides extending in a second direction DR2intersecting the first direction DR1. A corner where the first side and the second side of the display device1meet may have a right angle. However, the corner may have a curved surface. The first side may be shorter than the second side. The planar shape of the display device1may be a circular shape or other shapes. The display device1may include a display area DA for displaying an image and a non-display area NDA for not displaying an image. The non-display area NDA may be located around a periphery of the display area DA to surround the display area DA. Unless otherwise defined, the terms “above,” “upper side,” “upper portion,” “top,” and “top surface,” as used herein, refer to a direction indicated by an arrow in a third direction DR3intersecting the first and second directions DR1and DR2, and the terms “below,” “lower side,” “lower portion,” “bottom,” and “bottom surface,” as used herein, refer to a direction opposite to the direction indicated by the arrow in the third direction DR3. In one embodiment, the display device1may include a display substrate10and a color conversion substrate30overlapping or facing the display substrate10. The display device1may include a sealing portion50for coupling the display substrate10and the color conversion substrate30, and a filler70filled between the display substrate10and the color conversion substrate30. The display substrate10may include elements and circuits for displaying an image, for example, a pixel circuit such as a switching element, a pixel defining layer and a self-light-emitting element that may define a light emission region and a non-emission region in the display area DA. The self-light-emitting element may include at least one of an organic light emitting diode, a quantum dot light emitting diode, a micro light emitting diode (e.g., micro LED) based on inorganic materials and a nano light emitting diode (e.g., nano LED) based on inorganic materials. Herein, the self-light-emitting element may be an organic light emitting element. The color conversion substrate30may be located above the display substrate10to face the display substrate10. The color conversion substrate30may include a color conversion pattern for converting the color of incident light. The color conversion pattern may include at least one of a color filter and a wavelength conversion pattern. The sealing portion50may be located between the display substrate10and the color conversion substrate30and in the non-display area NDA. The sealing portion50may be disposed along edges of the display substrate10and the color conversion substrate30in the non-display area NDA to surround or be around a periphery of the display area DA in plan view. The display substrate10and the color conversion substrate30may be coupled to each other through the sealing portion50. The sealing portion50may be made of an organic material. For example, the sealing portion50may be made of an epoxy-based resin, but may not be limited thereto. The filler70may be located in a space between the display substrate10and the color conversion substrate30and may be surrounded by, so as to be around, the sealing portion50. The filler70may fill the space between the display substrate10and the color conversion substrate30. The filler70may be made of a material that can transmit light. The filler70may be made of organic material. For example, the filler70may be formed of a silicon-based organic material, an epoxy-based organic material, or the like, but may not be limited thereto. The filler70may be omitted. FIG.3shows a plan view of the display substrate in the display area of the display device illustrated inFIGS.1and2.FIG.4shows a plan view of the color conversion substrate in the display area of the display device illustrated inFIGS.1and2. Referring toFIGS.1to4, light emission regions LA1, LA2, LA3, LA4, LA5and LA6and a non-emission region NLA may be defined in the display area DA of the display substrate10. The light emission regions LA1, LA2, LA3, LA4, LA5and LA6may be regions where light generated by the light emitting element of the display substrate10may be emitted to the outside of the display substrate10, and the non-emission region NLA may be a region where light may not be emitted to the outside of the display substrate10. In an embodiment, the light emitted from the light emission regions LA1, LA2, LA3, LA4, LA5and LA6to the outside of the display substrate10may be light L having a specific center wavelength band. The light L may be blue light and may have a peak wavelength in a range of about 440 nm to about 480 nm. The display substrate10may include the light emission regions LA1, LA2and LA3disposed in a first row RL1, and the light emission regions LA4, LA5and LA6disposed in a second row RL2in the display area DA. In the display substrate10, a first light emission region LA1, a second light emission region LA2and a third light emission region LA3may be disposed along the first direction DR1in the first row RL1. The first light emission region LA1, the second light emission region LA2and the third light emission region LA3may be sequentially and repeatedly disposed along the first direction DR1. In the second row RL2adjacent to the first row RL1in the second direction DR2, a fourth light emission region LA4, a fifth light emission region LA5and a sixth light emission region LA6may be sequentially and repeatedly disposed along the first direction DR1. A first width WL1of the first light emission region LA1, which may be measured along the first direction DR1may be larger than a second width WL2of the second light emission region LA2and a third width WL3of the third light emission region LA3, which may be measured along the first direction DR1. The second width WL2of the second light emission region LA2and the third width WL3of the third light emission region LA3may be different from each other. For example, the second width WL2of the second light emission region LA2may be larger than the third width WL3of the third light emission region LA3. An area of the first light emission region LA1may be larger than an area of the second light emission region LA2and an area of the third light emission region LA3, and the area of the second light emission region LA2may be larger than the area of the third light emission region LA3. However, the first width WL1of the first light emission region LA1, the second width WL2of the second light emission region LA2and the third width WL3of the third light emission region LA3may be substantially the same. The area of the second light emission region LA2may be smaller than that of the third light emission region LA3. The area of the first light emission region LA1, the area of the second light emission region LA2and the area of the third light emission region LA3may be substantially the same. Though the width of the display substrate10may gradually decrease from the first light emission region LA1to the third light emission region LA3with respect to such regions and as illustrated, the disclosure may not be limited thereto. The fourth light emission region LA4adjacent to the first light emission region LA1in the second direction DR2may be the same as the first light emission region LA1except that the fourth light emission region LA4may be located in the second row RL2. The width and the area of the fourth light emission region LA4and the structure of the components disposed therein may be substantially the same as those of the first light emission region LA1. Similarly, the second light emission region LA2and the fifth light emission region LA5adjacent to each other in the second direction DR2may have substantially the same structure, and the third light emission region LA3and the sixth light emission region LA6adjacent to each other in the second direction DR2may have substantially the same structure. The color conversion substrate30may overlap or face the display substrate10. In the display area DA of the color conversion substrate30, light transmitting regions TA1, TA2, TA3, TA4, TA5and TA6and a light blocking region BA may be defined. The light transmitting regions TA1, TA2, TA3, TA4, TA5and TA6may be regions where light emitted from the display substrate10passes through the color conversion substrate30and may be provided to the outside of the display device1. The light blocking region BA may be a region where light emitted from the display substrate10may not be transmitted to the outside of the display device1. The color conversion substrate30may include the light transmitting regions TA1, TA2and TA3disposed in a first row RT1, and the light transmitting regions TA4, TA5and TA6in a second row RT2in the display area DA. In the color conversion substrate30, the first light transmitting region TA1, the second light transmitting region TA2and the third light transmitting region TA3may be disposed along the first direction DR1in the first row RT1. In the color conversion substrate30, the first light transmitting region TA1, the second light transmitting region TA2and the third light transmitting region TA3may be sequentially and repeatedly disposed along the first direction DR1. The first light transmitting region TA1may correspond to and overlap with or face the first light emission region LA1. Similarly, the second light transmitting region TA2may correspond to and overlap with or face the second light emission region LA2, and the third light transmitting region TA3may correspond to and overlap with or face the third light emission region LA3. The first light emission region LA1, the second light emission region LA2and the third light emission region LA3of the display substrate10may be sequentially and repeatedly disposed, and the first light transmitting region TA1, the second light transmitting region TA2and the third light transmitting region TA3which correspond to and overlap with or face them may also be sequentially and repeatedly disposed. The light L provided from the display substrate10may be provided to the outside of the display device1after passing through the first light transmitting region TA1, the second light transmitting region TA2and the third light transmitting region TA3. In a case that the light emitted from the first light transmitting region TA1to the outside of the display device1, such light may be referred to as first exit light, and the light emitted from the second light transmitting region TA2to the outside of the display device1may be referred to as second exit light and the light emitted from the third light transmitting region TA3to the outside of the display device1may be referred to as third exit light. The first exit light may be light of a first color, the second exit light may be light of a second color different from the first color, and the third exit light may be light of a third color different from the first color and the second color. The light of the first color may be red light having a peak wavelength in a range of about 610 nm to about 650 nm as described above, and the light of the second color may be green light having a peak wavelength in a range of about 510 nm to about 550 nm. The light of the third color may be blue light having a peak wavelength in a range of about 440 nm to about 480 nm. In the second row RT2adjacent to the first row RT1in the second direction DR2, the fourth light transmitting region TA4, the fifth light transmitting region TA5and the sixth light transmitting region TA6may be disposed. The fourth light transmitting region TA4, the fifth light transmitting region TA5and the sixth light transmitting region TA6may also be sequentially and repeatedly disposed along the first direction DR1in the second row RT2. The fourth light transmitting region TA4may correspond to and overlap with or face the fourth light emission region LA4, the fifth light transmitting region TA5may correspond to and overlap with or face the fifth light emission region LA5, and the sixth light transmitting region TA6may correspond to and overlap with or face the sixth light emission region LA6. The first light transmitting region TA1, the second light transmitting region TA2and the third light transmitting region TA3may have a width WT measured in the first direction DR1, relative to the first light emission region LA1, the second light emission region LA2and the third light emission region LA3. For example, a first width WT1of the first light transmitting region TA1, which may be measured along the first direction DR1may be larger than a second width WT2of the second light transmitting region TA2and a third width WT3of the third light transmitting region TA3, which may be measured along the first direction DR1. The second width WT2of the second light transmitting region TA2and the third width WT3of the third light transmitting region TA3may be different from each other. For example, the second width WT2of the second light transmitting region TA2may be larger than the third width WT3of the third light transmitting region TA3. An area of the first light transmitting region TA1may be larger than an area of the second light transmitting region TA2and an area of the third light transmitting region TA3, and the area of the second light transmitting region TA2may be larger than the area of the third light transmitting region TA3. The fourth light transmitting region TA4, the fifth light transmitting region TA5and the sixth light transmitting region TA6, which may be adjacent to the light transmitting regions TA1, TA2and TA3in the second direction DR2, may each have substantially the same width, area, structure of components disposed therein and color of light emitted to the outside of the display device1. In the color conversion substrate30, the light blocking region BA may be located around the light transmission regions TA1, TA2, TA3, TA4, TA5and TA6in the display area DA. In a case that the light blocking region BA may be divided into regions, the light blocking region BA may include a first light blocking region BA1, a second light blocking region BA2, a third light blocking region BA3, a fourth light blocking region BA4, a fifth light blocking region BA5, a sixth light blocking region BA6and a seventh light blocking region BA7. The first light blocking region BA1may be located between the first light transmitting region TA1and the second light transmitting region TA2along the first direction DR1. The second light blocking region BA2may be located between the second light transmitting region TA2and the third light transmitting region TA3along the first direction DR1. The third light blocking region BA3may be located between the third light transmitting region TA3and another first light transmitting region TA1along the first direction DR1. The fourth light blocking region BA4may be located between the fourth light transmitting region TA4and the fifth light transmitting region TA5along the first direction DR1. The fifth light blocking region BA5may be located between the fifth light transmitting region TA5and the sixth light transmitting region TA6along the first direction DR1. The sixth light blocking region BA6may be located between the sixth light transmitting region TA6and another fourth light transmitting region TA4along the first direction DR1. The seventh light blocking region BA7may be located between the first row RT1and the second row RT2adjacent to each other in the second direction DR2. Although not shown, the seventh light blocking region BA7may be located between rows other than the first row RT1and the second row RT2. FIG.5shows a schematic cross-sectional view of the display device taken along line X1-X1′ ofFIGS.3and4. FIG.5illustrates cross sections of the first light emission region LA1, the second light emission region LA2and the third light emission region LA3of the display substrate10, and the first light transmitting region TA1, the second light transmitting region TA2and the third light transmitting region TA3of the color conversion substrate30. Referring toFIG.5in addition toFIGS.3and4, as described above, the display device1may include the display substrate10and the color conversion substrate30, and may further include the filler70located between the display substrate10and the color conversion substrate30. The display substrate10may include a first base substrate110and switching elements T1, T2and T3disposed on the first base substrate110. The first base substrate110may be made of a light transmitting material. The first base substrate110may be a glass substrate or a plastic substrate. In a case that the first base substrate110may be a plastic substrate, the first base substrate110may have flexibility. The first base substrate110may include a separate layer, e.g., a buffer layer or an insulating layer, disposed on the glass substrate or the plastic substrate. The light emission regions LA1, LA2, LA3, LA4, LA5and LA6and a non-emission region NLA may be defined in the first base substrate110. The switching elements T1, T2and T3may be located on the first base substrate110. The first switching element T1may be located in the first light emission region LA1, the second switching element T2may be located in the second light emission region LA2, and the third switching element T3may be located in the third light emission region LA3. In another embodiment, at least one of the first switching element T1, the second switching element T2and the third switching element T3may be located in the non-emission region NLA. Each of the first switching element T1, the second switching element T2and the third switching element T3may be a thin film transistor including polysilicon or a thin film transistor including an oxide semiconductor. Although not shown in the drawing, signal lines (e.g., gate lines, data lines and power lines) for transmitting signals to each switching element may be further disposed on the first base substrate110. An insulating layer130may be located on the first switching element T1, the second switching element T2and the third switching element T3. The insulating layer130may be a planarization layer. The insulating layer130may be formed of an organic layer. For example, the insulating layer130may include acrylic resin, epoxy resin, imide resin, ester resin, or the like. The insulating layer130may include a positive photosensitive material or a negative photosensitive material. A first anode electrode AE1, a second anode electrode AE2and a third anode electrode AE3may be disposed on the insulating layer130. The first anode electrode AE1may be located in the first light emission region LA1, and at least a portion thereof may extend to the non-emission region NLA. The second anode electrode AE2may be located in the second light emission region LA2, and at least a portion thereof may extend to the non-emission region NLA. The third anode electrode AE3may be located in the third light emission region LA3, and at least a portion thereof may extend to the non-emission region NLA. The first anode electrode AE1may be connected to the first switching element T1through the insulating layer130, and the second anode electrode AE2may be connected to the second switching element T2through the insulating layer130. The third anode electrode AE3may be connected to the third switching element T3through the insulating layer130. The widths or areas of the first anode electrode AE1, the second anode electrode AE2and the third anode electrode AE3may be different from each other. For example, the width of the first anode electrode AE1may be larger than the width of the second anode electrode AE2, and the width of the second anode electrode AE2may be smaller than the width of the first anode electrode AE1and larger than the width of the third anode electrode AE3. As another example, the area of the first anode electrode AE1may be larger than the area of the second anode electrode AE2, and the area of the second anode electrode AE2may be smaller than the area of the first anode electrode AE1and larger than the area of the third anode electrode AE3. However, the disclosure may not be limited thereto, and the area of the first anode electrode AE1may be smaller than the area of the second anode electrode AE2, and the area of the third anode electrode AE3may be larger than the area of the second anode electrode AE2and the area of the first anode electrode AE1. The widths or areas of the first anode electrode AE1, the second anode electrode AE2and the third anode electrode AE3may be substantially the same. The first anode electrode AE1, the second anode electrode AE2and the third anode electrode AE3may be reflective electrodes. The first anode electrode AE1, the second anode electrode AE2and the third anode electrode AE3may be a metal layer containing metal such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir and Cr. In another embodiment, the first anode electrode AE1, the second anode electrode AE2and the third anode electrode AE3may include a metal oxide layer stacked on the metal layer. The first anode electrode AE1, the second anode electrode AE2and the third anode electrode AE3may have a double-layer structure of ITO/Ag, Ag/ITO, ITO/Mg or ITO/MgF, or may have a multilayer structure of, e.g., ITO/Ag/ITO. A pixel defining layer150may be positioned on the first anode electrode AE1, the second anode electrode AE2and the third anode electrode AE3. The pixel defining layer150may include an opening exposing the first anode electrode AE1, an opening exposing the second anode electrode AE2and an opening exposing the third anode electrode AE3, and may define the first light emission region LA1, the second light emission region LA2, the third light emission region LA3and the non-emission region NLA. For example, a region of the first anode electrode AE1which may be exposed by the pixel defining layer150may be the first light emission region LA1. Similarly, a region of the second anode electrode AE2which may be exposed by the pixel defining layer150may be the second light emission region LA2, and a region of the third anode electrode AE3which may be exposed by the pixel defining layer150may be the third light emission region LA3. A region where the pixel defining layer150may located may be the non-emission region NLA, such that the non-emission region NLA may not be exposed by the pixel defining layer150. The pixel defining layer150may include an organic insulating material selected from the group consisting of acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene resin, polyphenylenesulfide resin and benzocyclobutene (BCB). A portion of the pixel defining layer150may be located to overlap or face a partition wall400. For example, as illustrated inFIG.5, the pixel defining layer150may overlap or face the partition wall400that may be located in the light blocking region BA. A light emitting layer OL may be located on the first anode electrode AE1, the second anode electrode AE2and the third anode electrode AE3. The light emitting layer OL may have a shape of a continuous film formed over the light emission regions LA1, LA2, LA3, LA4, LA5and LA6and the non-emission region NLA. A cathode electrode CE may be located on the light emitting layer OL. The cathode electrode CE may have a semi-transmissive or transmissive property. In a case that the cathode electrode CE may have a semi-transmissive property, the cathode electrode CE may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF/Ca, LiF/Al, Mo, Ti or a compound or mixture thereof, such as a mixture of Ag and Mg. In a case that the cathode electrode CE may have a thickness of tens to hundreds of angstroms, the cathode electrode CE may have a semi-transmissive property. In a case that the cathode electrode CE may have a transmissive property, the cathode electrode CE may include transparent conductive oxide (TCO). For example, the cathode electrode CE may include tungsten oxide (WxOx), titanium oxide (TiO2), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), magnesium oxide (MgO) or the like. The first anode electrode AE1, the light emitting layer OL and the cathode electrode CE may constitute a first light emitting element ED1. The second anode electrode AE2, the light emitting layer OL and the cathode electrode CE may constitute a second light emitting element ED2. The third anode electrode AE3, the light emitting layer OL and the cathode electrode CE may constitute a third light emitting element ED3. Each of the first light emitting element ED1, the second light emitting element ED2and the third light emitting element ED3may emit emission light L, and the emission light L may be provided to the color conversion substrate30. The light emitting layer OL of the light emitting element ED may include a plurality of layers that may be stacked. Further description thereof follows below with reference toFIGS.6to8. FIG.6shows an enlarged schematic cross-sectional view of portion Q ofFIG.5.FIGS.7and8show schematic cross-sectional views showing a modification of the structure shown inFIG.6. Referring toFIGS.6to8, the light emitting layer OL may include a first hole transport layer HTL1located on the first anode electrode AE1, a first light emitting material layer EL11located on the first hole transport layer HTL1and a first electron transport layer ETL1located on the first light emitting material layer EL11. The light emitting layer OL may include one light emitting layer, for example, the first light emitting material layer EL11as a light emitting layer. The first light emitting material layer EL11may be a blue light emitting layer. However, the stacked structure of the light emitting layer OL may not be limited to the structure ofFIG.6, and may be modified as shown inFIGS.7and8, for example. Referring toFIG.7, the light emitting layer OL may include a first charge generating layer CGL11located on the first light emitting material layer EL11and a second light emitting material layer EL12located on the first charge generating layer CGL11. The first electron transport layer ETL1may be located on the second light emitting material layer EL12. The first charge generating layer CGL11may inject charges into adjacent light emitting layers. The first charge generating layer CGL11may adjust a charge balance between the first light emitting material layer EL11and the second light emitting material layer EL12. The first charge generating layer CGL11may include an n-type charge generating layer and a p-type charge generating layer. The p-type charge generating layer may be disposed on the n-type charge generating layer. The second light emitting material layer EL12may emit blue light similarly to the first light emitting material layer EL11. The second light emitting material layer EL12may emit blue light having the same peak wavelength as or a different peak wavelength from the first light emitting material layer EL11. In another embodiment, the first light emitting material layer EL11and the second light emitting material layer EL12may emit light of different colors. For example, the first light emitting material layer EL11may emit blue light and the second light emitting material layer EL12may emit green light. The light emitting layer OL having the above-described structure may include two light emitting layers, and may thereby improve light emission efficiency and lifetime compared to the structure ofFIG.6. FIG.8illustrates that the light emitting layer OL may include three light emitting material layers EL11, EL12and EL13and two charge generating layers CGL11and CGL12interposed therebetween. As shown inFIG.8, the light emitting layer OL may include a first charge generating layer CGL11located on a first light emitting material layer EL11, a second light emitting material layer EL12located on the first charge generating layer CGL11, a second charge generating layer CGL12located on the second light emitting material layer EL12, and a third light emitting material layer EL13located on the second charge generating layer CGL12. The first electron transport layer ETL1may be located on the third light emitting material layer EL13. The third light emitting material layer EL13may emit blue light similarly to the first light emitting material layer EL11and the second light emitting material layer EL12. In an embodiment, each of the first light emitting material layer EL11, the second light emitting material layer EL12and the third light emitting material layer EL13may emit blue light, and all of them may have the same wavelength peak. As another example, some of them may have different wavelength peaks. In another embodiment, the emission colors of the first light emitting material layer EL11, the second light emitting material layer EL12and the third light emitting material layer EL13may be different. For example, each of the light emitting layers may emit blue or green light, or the light emitting layers may emit red, green and blue light, respectively, to emit white light as a whole. Referring again toFIG.5, a thin film encapsulation layer170may be disposed on the cathode electrode CE. The thin film encapsulation layer170may be commonly disposed in or across the first light emission region LA1, the second light emission region LA2, the third light emission region LA3and the non-emission region NLA. The thin film encapsulation layer170may directly cover the cathode electrode CE. A capping layer (not shown) covering the cathode electrode CE may be further disposed between the thin film encapsulation layer170and the cathode electrode CE. The thin film encapsulation layer170may directly cover the capping layer. The thin film encapsulation layer170may include a first encapsulation inorganic layer171, an encapsulation organic layer173and a second encapsulation inorganic layer175sequentially stacked on the cathode electrode CE. Each of the first encapsulation inorganic layer171and the second encapsulation inorganic layer175may be formed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride (SiON), lithium fluoride and/or the like. The encapsulation organic layer173may be formed of acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, perylene resin and/or the like. However, the structure of the thin film encapsulation layer170may not be limited to the above. The stacked structure of the thin film encapsulation layer170may be variously changed. A panel light blocking member190may be located on the thin film encapsulation layer170. The panel light blocking member190may be located on the thin film encapsulation layer170and may be located in the non-emission region NLA. The panel light blocking member190may prevent light interference between adjacent light emission regions, which may cause color mixture, so as to thereby improve color reproducibility. The panel light blocking member190may be disposed in the non-emission region NLA to surround or be around each of the light emission regions LA1, LA2, LA3, LA4, LA5and LA6in plan view. The panel light blocking member190may include an organic light blocking material, and may be formed through a coating and exposure process for an organic light blocking material. FIG.9shows a plan view showing an arrangement of a partition wall in a color conversion substrate according to an embodiment.FIG.10shows a plan view illustrating an arrangement structure of a first color filter, a second color filter, and a third color filter in a color conversion substrate according to an embodiment.FIG.11shows a schematic plan view illustrating an arrangement of a first wavelength conversion pattern, a second wavelength conversion pattern and a light transmission pattern in a color conversion substrate according to an embodiment.FIG.12shows a schematic cross-sectional view of a display device taken along line X2-X2′ ofFIG.11.FIG.13shows a schematic cross-sectional view of a display device taken along line X3-X3′ ofFIG.11. Referring toFIGS.9to13in addition toFIG.5, the color conversion substrate30may include a second base substrate310, color filters231,232and233, a partition wall400, wavelength conversion patterns330and340and a light transmission pattern350. The second base substrate310may be made of a light transmitting material. The second base substrate310may include a glass substrate or a plastic substrate. The second base substrate310may include a separate layer, for example, an insulating layer such as an inorganic layer, located on the glass substrate or the plastic substrate. As described above, the light transmitting regions TA1, TA2, TA3, TA4, TA5and TA6and the light blocking region BA may be defined in the second base substrate310as shown inFIG.4. The color filters231,232and233and the partition wall400may be located on one surface of the second base substrate310facing the display substrate10. The color filters may include a first color filter231, a second color filter232and a third color filter233. The first color filter231may be located on one surface of the second base substrate310and may be located in the first light transmitting region TA1and the fourth light transmitting region TA4. The first color filter231located in the first light transmitting region TA1and the first color filter231located in the fourth light transmitting region TA4may be connected to each other along the second direction DR2. For example, as illustrated inFIG.10, the first color filter231located in the first row RT1may extend in the second direction DR2and may be connected to the first color filter231located in the second row RT2. The partition wall400may be disposed in a region where the first color filter231may extend in the second direction DR2and overlaps or faces the seventh light blocking region BA7. The partition wall400may extend in the first direction DR1in the seventh light blocking region BA7to separate the first light transmitting region TA1and the fourth light transmitting region TA4in the second direction DR2. However, the disclosure may not be limited thereto. For example, the first color filter231located in the first light transmitting region TA1and the first color filter231located in the fourth light transmitting region TA4may be spaced apart from each other. For example, the respective first color filters231may be connected in a stripe shape to extend in the second direction DR2or disposed in an island shape to be separated in the second direction DR2. Herein, the term, “island shape,” may mean that a first element may be separated from a second element. The first color filter231may selectively transmit light of the first color (e.g., red light) and may block or absorb light of the second color (e.g., green light) and light of the third color (e.g., blue light). The first color filter231may be a red color filter, and may include a red colorant such as a red dye or a red pigment. The term “colorant” as used herein may be understood as including both a dye and a pigment. Similarly to the first color filter231, the second color filter232and the third color filter233may also be located on one surface of the second base substrate310. The second color filter232may be located in the second light transmitting region TA2and the fifth light transmitting region TA5, and the third color filter233may be located in the third light transmitting region TA3and the sixth light transmitting region TA6. In a case that the second color filter232and the third color filter233extend in the second direction DR2, the second color filter232and the third color filter233located in the first row RT1may be connected to the second color filter232and the third color filter233located in the second row RT2. The partition wall400may be located in a region where the second color filter232and the third color filter233overlap or face the seventh light blocking region BA7. However, the disclosure may not be limited thereto. The second color filter232and the third color filter233may be spaced apart from each other between the first row RT1and the second row RT2. For example, the second color filter232and the third color filter233may be connected in a stripe shape to extend in the second direction DR2or disposed in an island shape to be separated in the second direction DR2. The second color filter232may selectively transmit light of the second color (e.g., green light) and may block or absorb light of the first color (e.g., red light) and light of the third color (e.g., blue light). The second color filter232may be a green color filter, and may include a green colorant such as a green dye and a green pigment. The third color filter233may selectively transmit light of the third color (e.g., blue light) and may block or absorb light of the second color (e.g., green light) and light of the first color (e.g., red light). The third color filter233may be a blue color filter, and may include a blue colorant such as a blue dye and a blue pigment. According to an embodiment, the first color filter231, the second color filter232and the third color filter233may be spaced apart from each other. Referring toFIGS.5and10, the first color filter231, the second color filter232and the third color filter233may extend in the second direction DR2, respectively, and may be disposed to be spaced apart in the first direction DR1. The first color filter231, the second color filter232and the third color filter233may extend in the second direction DR2, respectively, in the first light transmitting region TA1, the second light transmitting region TA2and the third light transmitting region TA3. Each of the first color filter231, the second color filter232and the third color filter233may have a stripe shape extending along the second direction DR2, and cross the seventh light blocking region BA7between the first row RT1and the second row RT2. However, the disclosure may not be limited thereto. In another embodiment, at least one of the first color filter231, the second color filter232and the third color filter233may be disposed to be separated by the seventh light blocking region BA7between the first row RT1and the second row RT2along the second direction DR2. For example, the first color filter231, the second color filter232and the third color filter233may have an island shape so as to achieve their separation. In some cases, the first color filter231, the second color filter232and the third color filter233may be disposed to overlap or face each other. The bottom surface of one color filter may be in contact with the top surface of another color filter. As described above, since the first light transmitting region TA1, the second light transmitting region TA2and the third light transmitting region TA3may have different widths, the first color filter231, the second color filter232and the third color filter233may also have different widths. The first light blocking region BA1, the second light blocking region BA2and the third light blocking region BA3may be located in regions between the first color filter231, the second color filter232and the third color filter233which may be spaced apart from each other. The partition wall400may be located in the light blocking region BA. A first capping layer391covering the first color filter231, the second color filter232and the third color filter233may be disposed on one surface of the second base substrate310. The first capping layer391may be in direct contact with the first color filter231, the second color filter232and the third color filter233. The first capping layer391may prevent contamination or damage of the first color filter231, the second color filter232, the third color filter233and the like due to infiltration of impurities such as moisture or air from the outside. The first capping layer391may prevent the colorant included in the first color filter231, the second color filter232and the third color filter233from being diffused into other components, e.g., the first wavelength conversion pattern330and the second wavelength conversion pattern340. The first capping layer391may be made of an inorganic material. For example, the first capping layer391may include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, or the like. The first capping layer391may also be in contact with the partition wall400. The first capping layer391may be in contact with the partition wall400at least in the light blocking region BA. The partition wall400may be disposed between the first color filter231, the second color filter232and the third color filter233, and the first capping layer391may be in contact with the partition wall400between the first color filter231, the second color filter232and the third color filter233. The first capping layer391may be in contact with the partition wall400in the light transmitting region TA. The partition wall400may be disposed on one surface of the second base substrate310facing the display substrate10. The partition wall400may be disposed to overlap or face the light blocking region BA. As illustrated inFIG.9, the partition wall400may extend in the first direction DR1and the second direction DR2in the light blocking region BA. The partition wall400may extend in the second direction DR2in the first light blocking region BA1, the second light blocking region BA2and the third light blocking region BA3. The partition walls400extending in the second direction DR2in the first light blocking region BA1, the second light blocking region BA2and the third light blocking region BA3may extend to the fourth light blocking region BA4, the fifth light blocking region BA5and the sixth light blocking region BA6, respectively. Further, the partition wall400may extend in the first direction DR1in the seventh light blocking region BA7. For example, the partition wall400may be formed in a grid pattern on the second base substrate310between ones of the light blocking regions. According to an embodiment, at least a partial region of the partition wall400may overlap or face a light transmitting region TA. Both sides of the partition wall400extending in the second direction DR2may overlap or face the light transmitting region TA. For example, the width of the partition wall400may be larger than the width of the light blocking region BA. For example, one side of the partition wall400located in the first light blocking region BA1may overlap or face the first light transmitting region TA1, and the other side thereof may overlap or face the second light transmitting region TA2. The partition wall400extending in the first direction DR1in the seventh light blocking region TA7may have one side overlapping with or facing the first light transmitting region TA1, and the other side overlapping with or facing the fourth light transmitting region TA4. The partition wall400may be formed as described above by arranging partition layers410and420so as to allow the partition wall400to partially overlap or face the color filters. The partition wall400may include an organic light blocking material, and may be formed through a coating and exposure process for an organic light blocking material. It may be the case that without the partition wall400, external light directed toward the display device1may cause a problem such as a distortion of the color reproducibility of the color conversion substrate30. The partition wall400located on the second base substrate310may absorb at least a portion of such external light. Accordingly, the partition wall400may reduce color distortion due to external light reflection. The partition wall400may prevent light interference between adjacent light transmitting regions, which causes color mixture, thereby improving color reproducibility. The partition wall400may be located in a portion of the light blocking region BA and may overlap or face the non-emission region NLA. The partition wall400may be disposed to surround or be around each of the first light transmitting region TA1, the second light transmitting region TA2, the third light transmitting region TA3, the fourth light transmitting region TA4, the fifth light transmitting region TA5and the sixth light transmitting region TA6. The partition wall400may have a grid shape in plan view so as to be around the light transmitting regions TA. According to an embodiment, the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350may be formed by an inkjet method using an ink composition. The partition wall400formed on the color conversion substrate30may serve as a guide for stably positioning, at a desired position, the ink composition for forming the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350. The partition wall400may be made of an organic material, and may be made of a photosensitive organic material. The photosensitive organic material may be a negative photosensitive material which may be cured relative a portion thereof to which light may be irradiated. The partition wall400may include the light blocking member190. For example, the partition wall400may be located in the light blocking region BA to block light transmission. The partition wall400may be located between the first wavelength conversion pattern330and the second wavelength conversion pattern340and between the second wavelength conversion pattern340and the light transmission pattern350. The partition wall400may prevent color mixture between different light transmitting regions located adjacent to each other. In other words, the partition wall400may overlap or face the light blocking region BA, thereby preventing color mixture between neighboring light transmitting regions, and also preventing the ink from overflowing into the neighboring light transmitting region during a process of forming the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350. The partition wall400according to an embodiment may be formed as a double layer including a first partition layer410and a second partition layer420. The first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350may be formed to have a predetermined thickness, and the height of the partition wall400may be greater than the respective heights of at least the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350. The first partition layer410of the partition wall400may be disposed between the color filters that may be spaced apart from each other. The first partition layer410according to an embodiment may be disposed on the color filters that may be spaced apart from each other to form a flat lower surface. Accordingly, the partition wall400may have a symmetrical configuration between the neighboring light transmitting regions TA. The first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350may be disposed on the first capping layer391. The light transmission pattern350, the first wavelength conversion pattern330and the second wavelength conversion pattern340may be formed by an inkjet method. However, the disclosure may not be limited thereto, and the light transmission pattern350, the first wavelength conversion pattern330and the second wavelength conversion pattern340may be formed by coating a photosensitive material, and exposing and developing the photosensitive material. Hereinafter, a case where the light transmission pattern350, the first wavelength conversion pattern330and the second wavelength conversion pattern340may be formed by an inkjet method will be described by way of example. The first wavelength conversion pattern330may be located on the first capping layer391, and may be located in the first light transmitting region TA1and the fourth light transmitting region TA4. In some embodiments, the first wavelength conversion pattern330may have a structure in which a portion located in the first light transmitting region TA1and a portion located in the fourth light transmitting region TA4are separated from each other, i.e., in an island pattern form. The first wavelength conversion pattern330may emit light by converting or shifting the peak wavelength of incident light to another specific peak wavelength. The first wavelength conversion pattern330may convert the emission light L provided from the first light emitting element ED1into red light having a peak wavelength in a range of about 610 nm to about 650 nm and emit the red light. The first wavelength conversion pattern330may include a first base resin331and a first wavelength conversion material335dispersed in the first base resin331, and may include a first scatterer333dispersed in the first base resin331. The first base resin331may be made of a material having high light transmittance. The first base resin331may be formed of an organic material. The first base resin331may include an organic material such as epoxy resin, acrylic resin, cardo resin, or imide resin. However, the disclosure may not be limited thereto. The first wavelength conversion material335may convert or shift the peak wavelength of incident light to another specific peak wavelength. The first wavelength conversion material335may convert the emission light L, which may be blue light provided from the first light emitting element ED1, into red light having a single peak wavelength in a range of about 610 nm to about 650 nm and emit the red light. The first wavelength conversion material335may include a quantum dot, a quantum rod, a phosphor, and the like. For example, a quantum dot may be a particulate material that may emit light of a specific color in a case that an electron transitions from a conduction band to a valence band. The quantum dot may be a semiconductor nanocrystal material. The quantum dot may have a specific band gap according to its composition and size. Thus, the quantum dot may absorb light and then emit light having an intrinsic wavelength. Examples of semiconductor nanocrystals of the quantum dot may include group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI nanocrystals, and combinations thereof. The group II-VI compound may be selected from the group consisting of binary compounds, ternary compounds, and quaternary compounds, wherein the binary compounds are selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof. The ternary compounds may be selected from the group consisting of InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof. The quaternary compounds may be selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof. The group III-V compound may be selected from the group consisting of binary compounds, ternary compounds, and quaternary compounds, wherein the binary compounds may be selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof. The ternary compounds may be selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP and mixtures thereof. The quaternary compounds may be selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof. The group IV-VI compound may be selected from the group consisting of binary compounds, ternary compounds, and quaternary compounds, wherein the binary compounds may be selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof. The ternary compounds may be selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof. The quaternary compounds may be selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof. The group IV element may be selected from the group consisting of Si, Ge and mixtures thereof. The group IV compound may be a binary compound selected from the group consisting of SiC, SiGe and mixtures thereof. The binary compound, the tertiary compound or the quaternary compound may exist in particles at a uniform concentration, or may exist in the same particle divided into states where concentration distributions may be partially different. The particles may have a core/shell structure in which one quantum dot may surround or be around another quantum dot. An interface between the core and the shell may have a concentration gradient in which the concentration of elements existing in the shell may decrease toward the center. The quantum dot may have a core-shell structure including a core containing the nanocrystal described above and a shell surrounding or around the core. The shell of the quantum dot may serve as a protective layer for maintaining semiconductor characteristics by preventing chemical denaturation of the core and/or as a charging layer for giving electrophoretic characteristics to the quantum dot. The shell may include a single layer or a multilayer configuration. An interface between the core and the shell may have a concentration gradient in which the concentration of elements existent in the shell may decrease toward the center. Examples of the shell of the quantum dot may include a metal or non-metal oxide, a semiconductor compound, and a combination thereof. For example, the metal or non-metal oxide may be a binary compound such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4and NiO, or a tertiary compound such as MgAl2O4, CoFe2O4, NiFe2O4and CoMn2O4, though the disclosure may not be limited thereto. The semiconductor compound may be, for example, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb or the like, though the disclosure may not be limited thereto. The light emitted from the first wavelength conversion material335may have a full width of half maximum (FWHM) of an emission wavelength spectrum of less than or equal to about 45 nm, less than or equal to about 40 nm, or less than or equal to about 30 nm. Thus, the purity and reproducibility of a color displayed by the display device1may be improved. Light emitted from the first wavelength conversion material335may be emitted in various directions regardless of the incident direction of incident light. Accordingly, it may be possible to improve the lateral visibility of the red light displayed in the first light transmitting region TA1. A portion of the emission light L provided from the first light emitting element ED1may be transmitted and emitted through the first wavelength conversion pattern330without being converted into red light by the first wavelength conversion material335. The component of the emission light L incident on the first color filter231that may not be converted by the first wavelength conversion pattern330may be blocked by the first color filter231. On the other hand, the red light of the emission light L converted by the first wavelength conversion pattern330may pass through the first color filter231and may be emitted to the outside. For example, the light that may be converted by the first wavelength conversion pattern330may be emitted from the first light transmitting region TA1as red light. The first scatterer333may have a refractive index different from that of the first base resin331and may form an optical interface with the first base resin331. For example, the first scatterer333may include light scattering particles. The first scatterer333may not be limited in form as long as it may be a material capable of scattering at least a portion of the transmitted light. For example, the first scatterer333may include metal oxide particles or organic particles. Examples of the metal oxide may include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), tin oxide (SnO2), and the like. Examples of a material of the organic particles may include acrylic resin and urethane resin, and the like. The first scatterer333may scatter the light in a random direction regardless of the incident direction of the incident light without substantially converting the wavelength of the light passing through the first wavelength conversion pattern330. The second wavelength conversion pattern340may be located on the first capping layer391, and may be located in the second light transmitting region TA2and the fifth light transmitting region TA5. The second wavelength conversion pattern340may include a portion located in the second light transmitting region TA2and a portion located in the fifth light transmitting region TA5which may be separated from each other, i.e., in an island pattern. The second wavelength conversion pattern340may emit light by converting or shifting the peak wavelength of incident light to another specific peak wavelength. The second wavelength conversion pattern340may convert the emission light L provided from the second light emitting element ED2into green light having a peak wavelength in a range of about 510 nm to about 550 nm and may emit the green light. The second wavelength conversion pattern340may include a second base resin341and a second wavelength conversion material345dispersed in the second base resin341, and may include a second scatterer343dispersed in the second base resin341. The second base resin341may be made of a material having high light transmittance. The second base resin341may include an organic material. The second base resin341may be made of the same material as the first base resin331, or may include at least one of the materials that may form the first base resin331. However, the disclosure may not be limited thereto. The second wavelength conversion material345may convert or shift the peak wavelength of incident light to another specific peak wavelength. The second wavelength conversion material345may convert the emission light L having a peak wavelength in a range of about 440 nm to about 480 nm into green light having a peak wavelength in a range of about 510 nm to about 550 nm. Examples of the second wavelength conversion material345may include a quantum dot, a quantum rod, a phosphor, and the like. The second wavelength conversion material345may be substantially the same as or similar to the first wavelength conversion material335. Both the first wavelength conversion material335and the second wavelength conversion material345may be formed of quantum dots. The particle size of the quantum dots forming the first wavelength conversion material335may be larger than the particle size of the quantum dots forming the second wavelength conversion material345. The second scatterer343may have a refractive index different from that of the second base resin341and may form an optical interface with the second base resin341. For example, the second scatterer343may include light scattering particles. The second scatterer343may be substantially the same as or similar to the first scatterer333. The emission light L emitted from the second light emitting element ED2may be provided to the second wavelength conversion pattern340, and the second wavelength conversion material345may convert the emission light L emitted from the second light emitting element ED2into green light having a peak wavelength in a range of about 510 nm to about 550 nm and may emit the green light. The light transmission pattern350may be located on the first capping layer391, and may be located in the third light transmitting region TA3and the sixth light transmitting region TA6. The light transmission pattern350may include a portion located in the third light transmitting region TA3and a portion located in the sixth light transmitting region TA6that may be separated from each other, i.e., in an island pattern. The light transmission pattern350may transmit incident light. The emission light L provided from the third light emitting element ED3may pass through the light transmission pattern350and the third color filter233and may be emitted to the outside of the display device1. For example, the light emitted from the third light transmitting region TA3may be blue light. The light transmission pattern350may include a third base resin351, and a third scatterer353dispersed in the third base resin351. The third base resin351may be made of a material having high light transmittance. The third base resin351may include an organic material. For example, the third base resin351may be made of the same material as the first base resin331, or may include at least one of the materials forming the first base resin331. However, the disclosure may not be limited thereto. The third scatterer353may have a refractive index different from that of the third base resin351and may form an optical interface with the third base resin351. For example, the third scatterer353may include light scattering particles. The third scatterer353may be substantially the same as or similar to the first scatterer333. A second capping layer (not shown) may be located on the light transmission pattern350, the first wavelength conversion pattern330and the second wavelength conversion pattern340. The second capping layer may cover the light transmission pattern350, the first wavelength conversion pattern330, the second wavelength conversion pattern340and the partition wall400, and may seal them. Accordingly, the second capping layer may prevent contamination or damage of the light transmission pattern350, the first wavelength conversion pattern330and the second wavelength conversion pattern340due to infiltration of impurities such as moisture or air from the outside. The second capping layer may be made of an inorganic material. The second capping layer may be made of the same material as the first capping layer391, or may include at least one of the materials included in the first capping layer391. As described above, the filler70may be located in the space between the color conversion substrate30and the display substrate10. The filler70may be located between the first capping layer391and the thin film encapsulation layer170. The filler70may be in direct contact with first capping layer391. FIG.14shows an enlarged view of portion A ofFIG.5as a partially enlarged schematic cross-sectional view of the second light blocking region BA2between the second light transmitting region TA2and the third light transmitting region TA3. The description ofFIG.14may be equally applied to the partition walls400located in the others of the light transmitting regions TA and the light blocking regions BA. As illustrated inFIG.14, the partition wall400according to an embodiment may include the first partition layer410and the second partition layer420. The first partition layer410may be disposed on one surface of the second base substrate310. The second color filter232and the third color filter233may be spaced apart from each other, and the second light blocking region BA2may be located in the separation region therebetween. According to an embodiment, the first partition layer410may be disposed between the second color filter232and the third color filter233. At least a portion of the first partition layer410may be disposed to overlap or face the second color filter232and the third color filter233, and at least a portion of the first partition layer410may be disposed on one surface of the second base substrate310without overlapping or facing the color filters. The lower surface of the first partition layer410may include a first lower surface LS1disposed on the second color filter232, a second lower surface LS2disposed on the third color filter233, and a third lower surface LS3disposed on one surface of the second base substrate310. Since the color filters232and233may be spaced apart from each other and the first partition layer410may be disposed therebetween, the lower surfaces LS1and LS2of the first partition wall layer410may be respectively disposed on the second color filter232and the third color filter233. The first partition layer410may include an organic light blocking material, and may be formed through a coating and exposure process for an organic light blocking material. During the coating and exposure process of the organic light blocking material, the shape of the side surface SS1or upper surface US1of the first partition layer410may be changed according to the shape of the lower surface on which the organic light blocking material may be disposed, and thus the first partition layer410may have an asymmetric structure. As a result of the formation of the first partition layer410, the volumes of the second wavelength conversion pattern340disposed on the second color filter232and the light transmission pattern350disposed on the third color filter233may be different. In a manufacturing process of the color conversion substrate30, the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350may be formed in regions that may be partitioned by the partition wall400. According to the volume or height H300of the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350, an amount of light emitted to the first color filter231, the second color filter232and the third color filter233may vary. For example, it may be required to form the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350with a uniform height and volume in the color conversion substrate30in order to provide a uniformly emitted amount and quality of light from each of the first color filter231, the second color filter232and the third color filter233. The volume of the region where the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350may be formed may vary depending on the shape of the partition wall400. In a case that the partition wall400formed on the color conversion substrate30may have a different size or shape for each light blocking region BA, the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350may be formed to have a different volume in the light blocking region BA and neighboring light transmitting regions TA. Accordingly, a different amount of light may be emitted for each light transmitting region TA through which light of the same color may be transmitted. Furthermore, in a case that such different volumes may exist, the amount or color purity of light emitted from the second color filter232and the third color filter233through the second wavelength conversion pattern340and the light transmission pattern350may be different, which may reduce the color reproducibility of the display device1. In the color conversion substrate30according to an embodiment, however, in order that the first partition layer410may have a symmetrical shape to avoid the above disadvantages, the color filters232and233may be spaced apart from each other such that the lower surface of the first partition layer410forms a flat surface. For example, the first lower surface LS1and the second lower surface LS2of the first partition layer410may form a flat surface on the second color filter232and the third color filter233, respectively. The third lower surface LS3of the first partition layer410may also form a flat surface on one surface of the second base substrate310. The first lower surface LS1and the second lower surface LS2of the first partition layer410may be parallel to one surface of the second base substrate310. The first partition layer410may include the first lower surface LS1, the second lower surface LS2and the third lower surface LS3. The first lower surface LS1may be disposed on one color filter, i.e., the second color filter232. The second lower surface LS2may be disposed on another color filter, i.e., the third color filter233. The third lower surface LS3may be disposed on one surface of the second base substrate310, wherein such surface may be a region where the second color filter232and the third color filter233may be spaced apart from each other. The first lower surface LS1, the second lower surface LS2and the third lower surface LS3may be substantially disposed on the first capping layer391. In other words, the first lower surface LS1, the second lower surface LS2and the third lower surface LS3may each contact the first capping layer391while the first lower surface LS1and the second lower surface LS2may be parallel to the second base substrate310. With this configuration, the width of the first partition layer410may flare, i.e., increase in width, from the third lower surface LS3toward ends of the first lower surface LS1and the second lower surface LS2that may contact the first capping layer391. The aforementioned flare may establish a neck of the first partition layer410between the third lower surface LS3and shoulders of the first partition layer410defined at each of the first lower surface LS1and the second lower surface LS2. Thus, the aforementioned neck and shoulder configuration may provide the symmetrical configuration of the partition wall400so as to enable desired color reproducibility of the color substrate. Accordingly, the first partition layer410may have a symmetrical structure with respect to the third lower surface LS3, and may have a uniform shape on the entire surface of the color conversion substrate30. According to an embodiment, a width W410of the first partition layer410may be greater than a width WBA of a region where the color filters are spaced apart from each other. The first partition layer410may have a width of a predetermined amount or more such that the first partition layer410may be disposed on one color filter, another color filter and the separation region therebetween. Since the width W410of the first partition layer410may be larger than the width WBA of the region where the color filters are spaced apart from each other, the first partition layer410may include the first lower surface LS1and the second lower surface LS2disposed to overlap only one color filter at each respective surface, and may be formed to include a flat surface with the first capping layer391. The width W410of the first partition layer410may not be particularly limited. For example, it may vary depending on the number of the transmitting regions TA defined in the color conversion substrate30. The width W410of the first partition layer410may have a range of about 15 μm to about 55 μm. According to an embodiment, a height H410of the first partition layer410may be greater than a thickness H230of any of the color filters. Accordingly, at least a portion of a respective color filter may be disposed between one surface of the second base substrate310and the first partition wall layer410. Since the first partition layer410may be disposed in the region where the color filters are spaced apart from each other while the height H410may be greater than the thickness H230of a respective color filter or color filters and the width W410may be larger than the width WBA of the region where the color filters are spaced apart from each other, the partition wall400may include the first lower surface LS1and the second lower surface LS2. The second partition layer420may be disposed on an upper surface US1of the first partition layer410. The partition wall400may be integrally formed to include the second partition layer420and the first partition layer410. The second partition layer420may substantially determine the height of the partition wall400. The sum of the height H420of the second partition layer420and the height H410of the first partition layer410may be greater than the sum of the thickness H230of a respective color filter and the height H300of the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350. In other words, the upper surface US1of the first partition layer410may be higher than upper surfaces of at least the first wavelength conversion pattern330, the second wavelength conversion pattern340, e.g., US3, and the light transmission pattern350, e.g., US4, respectively. Although that the upper surface US2of the second partition layer420may be flush with the upper surfaces of the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350, the disclosure may not be limited thereto. As described above, the amount of light emitted from the color conversion substrate30may vary depending on the volume of the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350. Accordingly, the regions partitioned by the partition wall400may be required to have a specific volume so as to have a light amount required for light to be emitted from the color conversion substrate30. This volume be adjusted by adjusting the height of the partition wall400, i.e., the height H420of the second partition layer420. In some embodiments, the height H410of the first partition layer410may be the same as the height H420of the second partition layer420. According to an embodiment, the width W420of the second partition layer420may be smaller than the width W410of the first partition layer410, and larger than the width WBA of the region where the color filters may be spaced apart from each other. The second partition layer420may be formed directly on the first partition layer410. In a case that the width W420of the second partition layer420may be larger than the width W410of the first partition layer410, the second partition layer420may be non-uniformly formed on the color conversion substrate30. According to an embodiment, the second partition layer420may include the width W420to be smaller than the width W410of the first partition layer410so as to be formed on the flat upper surface US1of the first partition layer410. Accordingly, the side surface SS2of the second partition layer420may be recessed toward the center of the partition wall400from the side surface SS1of the first partition layer410. The side surface of the partition wall400, i.e., SS1and SS2, may have a shape in which at least a portion thereof is recessed. The width of the second partition layer420may be larger than the width WBA of the region where the color filters may be spaced apart from each other. A portion of the light emitted from the display substrate10and incident on the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350may be incident on the color filters, but at least a portion thereof may be incident on the partition wall400. The partition wall400may block the light incident from the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350from moving to a first wavelength conversion pattern330, a second wavelength conversion pattern340and a light transmission pattern350located in another neighboring light transmitting region TA. To this end, the partition wall400may be required to have a minimum thickness, and the second partition layer420may have the width W420that may be larger than that of the light blocking region BA or the width WBA of the region where the color filters are spaced apart from each other. However, the disclosure may not be limited thereto. FIGS.15to19show schematic cross-sectional views illustrating a part of a manufacturing process of a display device according to an embodiment. FIGS.15to19schematically illustrate a manufacturing process of the color conversion substrate30of the display device1. In the following description, a discussion of the first light transmitting region TA1, the second light transmitting region TA2and the third light transmitting region TA3follows. However, it will be obvious that the following description may also be similarly applied to other light transmitting regions TA, e.g., the fourth light transmitting region TA4, the fifth light transmitting region TA5and the sixth light transmitting region TA6. Referring toFIGS.15to19, and as shown inFIG.15, a color filter230may be formed on one surface of the second base substrate310. The color filter230may be formed in a region overlapping or facing each light transmitting region TA. The color filters231,232, and233may be formed by coating a photosensitive organic material containing a colorant of a specific color, and exposing and developing the photosensitive organic material. For example, the first color filter231may be formed by coating a photosensitive organic material containing a red colorant, and exposing and developing it, the second color filter232may be formed by coating a photosensitive organic material containing a green colorant, and exposing and developing it, and the third color filter233may be formed by coating a photosensitive organic material containing a blue colorant, and exposing and developing it. According to an embodiment, the first color filter231, the second color filter232, and the third color filter233may be spaced apart from each other. However, the disclosure may not be limited thereto, and in some cases, such color filters may be disposed to overlap each other. As shown inFIG.16, the first capping layer391covering the first color filter231, the second color filter232and the third color filter233may be formed, and the first partition layer410may be formed between the color filters231,232, and233which may be spaced apart from each other. At least a portion of the first partition layer410, including sides thereof, may be disposed on the color filters231,232, and233, respectively. The first width W410of the first partition layer410may be larger than the width of the separation region between the plurality of color filters. The height H410of the first partition layer410may be greater than the thickness H230of the of color filters231,232, and233. As shown inFIG.17, the second partition layer420may be formed on the first partition layer410. The first partition layer410and the second partition layer420may form the partition wall400. As shown inFIG.18, the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350may be formed by spraying ink onto the first light transmitting region TA1, the second light transmitting region TA2and the third light transmitting region TA3, respectively. Each of the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350may be formed in a region surrounded by or disposed around the partition wall400. As shown inFIG.19, the display device1may be manufactured by bonding the display substrate10and the color conversion substrate30to each other, with the filler70therebetween. FIGS.20to24show schematic cross-sectional views of a display device according to embodiments. Referring toFIG.20, a first partition layer410_1of a color conversion substrate30_1according to an embodiment may include substantially the same material as the first color filter231. The color conversion substrate30_1according to the embodiment differs from the color conversion substrate30ofFIG.5in that the first partition layer410_1of a partition wall400_1includes a different material than does the first partition layer400. In the color conversion substrate30_1ofFIG.20, the first partition layer410_1may include the same colorant as the first color filter231. For example, the first partition layer410_1may include a red pigment or colorant. The emission light L emitted from the display substrate10may be incident on the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350. The emission light L incident on the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350may be incident on the first color filter231, the second color filter232and the third color filter233, respectively, to be displayed outside the display device1. However, the emission light L may be blue light of a third color, and at least a portion thereof may be incident on the first partition layer410_1instead of the first color filter231, the second color filter232and the third color filter233. The emission light L incident on the second wavelength conversion pattern340and the light transmission pattern350may be mixed light of green light and blue light, or blue light, respectively. In the color conversion substrate30_1according to the embodiment, the first partition layer410_1may include the same material as the first color filter231, thereby blocking the blue light or the mixed light of green light and blue light of the second wavelength conversion pattern340and the light transmission pattern350from traveling to another neighboring light transmitting region TA. In regard to the emission light L incident on the first wavelength conversion pattern330, the light converted into the red light by the first wavelength conversion material335may pass through the first partition layer410_1including the same material as the first color filter231and travel to another neighboring light transmitting region TA. However, since the second wavelength conversion pattern340or the light transmission pattern350may be located in the transmitting region TA adjacent to the first wavelength conversion pattern330, the red emission light which may travel to the light transmission pattern350may be blocked from traveling to the outside of the display device1by the third color filter233. The red emission light which may travel to the second wavelength conversion pattern340may be blocked from traveling to the outside of the display device1by the second color filter232. Since the second wavelength conversion material345may not convert red light into green light, it may thus be possible to block the red emission light from passing through the second color filter232and traveling to the outside of the display device1. The color conversion substrate30_1according to the embodiment may be configured such that the first partition layer410_1may include a red pigment, thereby preventing light from leaking through a neighboring transmitting region TA due to the color filter thereat not including a red pigment. Referring toFIG.21, a first partition layer410_2of a color conversion substrate30_2according to an embodiment may be made of a material including colorants other than the first color filter231, the second color filter232and the third color filter233. The color conversion substrate30_2according to the embodiment may differ from the color conversion substrate30_1ofFIG.20in that the first partition layer410_2of a partition wall400_2may include a yellow colorant. Even in a case that the first partition layer410_2may include a yellow colorant, it may be possible to prevent light incident on the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350from being emitted through the neighboring light transmitting region TA. As described above with reference toFIGS.20and21, the first partition layer410of the partition wall400may include the same material as the color filter. According to embodiments, the first partition layer410may be formed integrally with any color filter. Referring toFIGS.22and23, in color conversion substrates30_3and30_4, first partition layers410_3and410_4may be integrated with the color filters231and233, for example. The color conversion substrate30_3ofFIG.22may be configured such that the first partition layer410_3includes the same material as the first color filter231and is formed integrally with the first color filter231, and the color conversion substrate30_4ofFIG.23may be configured such that the first partition layer410_4includes the same material as the third color filter233and is formed integrally with the third color filter233. Thus, the color conversion substrates30_3and30_4differ from the color conversion substrate30ofFIG.5in that the first partition layers410_3and410_4may be integrated with respective color filters. The color conversion substrate30_3may be formed such that the first partition layer410_3may include the same material as the first color filter231, thereby absorbing a portion of the light introduced from the outside to reduce occurrences of reflected light. The thickness of the first color filter231may be substantially the same as the first partition layer410_3, such that they may be formed integrally. Thus, the first partition layer410_3may be formed simultaneously with the first color filter231. Accordingly, a manufacturing process of the color conversion substrate30_3may be made more efficient via the aforementioned integration. In the color conversion substrate30_4ofFIG.23, the first partition layer410_4may include the same material, i.e., a blue colorant, as that of the third color filter233. The first partition layer410_4may be formed at the same time as the third color filter233, and the thickness of the third color filter233may be substantially the same as that of the first partition layer410_4, such that they may be formed integrally. In a case that the first partition layer410_4may include a blue colorant, external light or reflected light transmitted through the first partition layer410_4may have a blue wavelength band. Perception of a color by a user's eyes depends on the color of light. Light in the blue wavelength band may be perceived with a lesser sensitivity by the user than light in a green wavelength band and light in a red wavelength band. Therefore, since the first partition layer410_4may include a blue colorant, a viewer's sensitivity to the reflected light may be decreased. In some embodiments, color filters may be disposed to be in contact with each other so as to not be spaced apart from each other. Referring toFIG.24, in a color conversion substrate30_5according to an embodiment, color filters may overlap or face each other without being spaced apart from each other. Accordingly, a portion of one color filter may be located on another color filter. The color conversion substrate30_5may differ from the color conversion substrate30ofFIG.5in that color filters may contact with each other.FIG.25shows an enlarged view of portion B ofFIG.24. Referring toFIGS.24and25, one color filter, i.e., the third color filter233, may partially overlap or partially face another color filter, i.e., the second color filter232. One side of the third color filter233may be disposed on one side of the second color filter232, so as to be in contact with each other in an overlapping region. Accordingly, the first capping layer391may be disposed to cover the upper surfaces of the first color filter231, the second color filter232and the third color filter233, without being in contact with the second base substrate310. The aforementioned overlapping color filter configuration may be obtained wherein the third color filter233and the second color filter232may not be spaced apart from each other and may be formed during manufacture of the color conversion substrate30. A first partition layer410_5may be disposed on a region where the color filters overlap each other. However, the width W410of the first partition layer410_5may be larger than that of the region where the color filters overlap or face each other. The first partition layer410_5may include the first lower surface LS1disposed on one color filter (i.e., the second color filter232), the second lower surface LS2disposed on another color filter (i.e., the third color filter233), and the third lower surface LS3disposed on a region where the second color filter232and the third color filter233overlap or face each other. Since the width W410of the first partition layer410_5may be larger than that of the region where the second color filter232and the third color filter233overlap or face each other, the first lower surface LS1and the second lower surface LS2may each be respectively disposed only on one color filter. The first lower surface LS1and the second lower surface LS2may be disposed substantially in contact with the first capping layer391, and may form a flat surface with the first capping layer391. Accordingly, the partition wall400_5may have a symmetrical structure, and the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350formed in regions partitioned by the partition wall400_5may be formed with a uniform volume. The height H410of the first partition layer410_5according to the embodiment may be smaller than the height H410of the first partition layer410according to the embodiment ofFIG.14. The height of the partition wall400_5may be greater than those of at least the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350. However, in some embodiments, the height of the partition wall400_5may be adjusted such that the upper surface of a second partition layer420_5and the upper surfaces of the first wavelength conversion pattern330, the second wavelength conversion pattern340and the light transmission pattern350may be disposed to be colinear. In a case that the height H420of the second partition layer420_5ofFIG.25may be the same as the height of the first partition layer410_5ofFIG.14, the height H410of the first partition layer410_5may be relatively small. However, the disclosure may not be limited thereto. As described above, in some embodiments, the first color filter231, the second color filter232and the third color filter233may not be disposed in the seventh light blocking region BA7. For example, the first color filter231, the second color filter232and the third color filter233disposed in the first row RT1may be spaced apart from the first color filter231, the second color filter232and the third color filter233disposed in the second row RT2. Thus, the partition wall400disposed in the seventh light blocking region BA7may not overlap or face the first color filter231, the second color filter232and the third color filter233in at least one of the first row RT1and the second row RT2. FIG.26shows a plan view illustrating an arrangement structure of a first color filter231, a second color filter232and a third color filter233in a color conversion substrate according to an embodiment.FIG.27shows a schematic cross-sectional view of a display device taken along line X2-X2′ ofFIG.26.FIG.28shows a schematic cross-sectional view of a display device taken along line X3-X3′ ofFIG.26. Referring toFIGS.26to28, according to an embodiment, the first color filter231, the second color filter232and the third color filter233may be disposed in each light transmission region TA without extending in the second direction DR2. For example, the first color filter231, the second color filter232and the third color filter233may have an island type configuration. Accordingly, the second base substrate310, the first capping layer391and a partition wall400_6may be disposed in the seventh light blocking region BA7. A color conversion substrate30_6according to the differs from the color conversion substrate30ofFIG.5in that the first color filter231, the second color filter232and the third color filter233may be disposed in an island shape, and the partition wall400_6may not overlap a color filter in the seventh light blocking region BA7. According to an embodiment, the first color filter231, the second color filter232and the third color filter233may not be disposed in the seventh light blocking region BA7. The first color filter231, the second color filter232and the third color filter233may be disposed, respectively, in the first light transmitting region TA1or the fourth light transmitting region TA4, the second light transmitting region TA2or the fifth light transmitting region TA5, and the third light transmitting region TA3or the sixth light transmitting region TA6. A first partition layer410_6may be directly disposed on the second base substrate310and the first capping layer391in the seventh light blocking region BA7. The first partition layer410_6and a second partition layer420_6disposed in the seventh light blocking region BA7may extend in the first direction DR1and may partially overlap or face the light transmitting regions TA located in the first row RT1and the second row RT2. For example, the width of the first partition layer410_6measured in the first direction DR1may be larger than the width of the seventh light blocking region BA7measured in the first direction DR1. In concluding the detailed description, those skilled in the art will appreciate that many variations and modifications can be made to the embodiments herein without substantially departing from the principles thereof. Therefore, the disclosed embodiments should be understood in a generic and descriptive sense only, and not for purposes of limitation. | 103,555 |
11943988 | DETAILED DESCRIPTION In the following description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of various exemplary embodiments or implementations of the invention. As used herein “embodiments” and “implementations” are interchangeable words that are non-limiting examples of devices or methods employing one or more of the inventive concepts disclosed herein. It is apparent, however, that various exemplary embodiments may be practiced without these specific details or with one or more equivalent arrangements. In other instances, well-known structures and devices are illustrated in block diagram form in order to avoid unnecessarily obscuring various exemplary embodiments. Further, various exemplary embodiments may be different, but do not have to be exclusive. For example, specific shapes, configurations, and characteristics of an exemplary embodiment may be used or implemented in another exemplary embodiment without departing from the inventive concepts. Unless otherwise specified, the illustrated exemplary embodiments are to be understood as providing exemplary features of varying detail of some ways in which the inventive concepts may be implemented in practice. Therefore, unless otherwise specified, the features, components, modules, layers, films, panels, regions, and/or aspects, etc. (hereinafter individually or collectively referred to as “elements”), of the various embodiments may be otherwise combined, separated, interchanged, and/or rearranged without departing from the inventive concepts. The use of cross-hatching and/or shading in the accompanying drawings is generally provided to clarify boundaries between adjacent elements. As such, neither the presence nor the absence of cross-hatching or shading conveys or indicates any preference or requirement for particular materials, material properties, dimensions, proportions, commonalities between illustrated elements, and/or any other characteristic, attribute, property, etc., of the elements, unless specified. When an exemplary embodiment may be implemented differently, a specific process order may be performed differently from the described order. For example, two consecutively described processes may be performed substantially at the same time or performed in an order opposite to the described order. Also, like reference numerals denote like elements. Further, the D1-axis, the D2-axis, and the D3-axis are not limited to three axes of a rectangular coordinate system, such as the x, y, and z-axes, and may be interpreted in a broader sense. For example, the D1-axis, the D2-axis, and the D3-axis may be perpendicular to one another, or may represent different directions that are not perpendicular to one another. Spatially relative terms, such as “beneath,” “below,” “under,” “lower,” “above,” “upper,” “over,” “higher,” “side” (e.g., as in “sidewall”), and the like, may be used herein for descriptive purposes, and, thereby, to describe one elements relationship to another element(s) as illustrated in the drawings. Spatially relative terms are intended to encompass different orientations of an apparatus in use, operation, and/or manufacture in addition to the orientation depicted in the drawings. For example, if the apparatus in the drawings is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the exemplary term “below” can encompass both an orientation of above and below. Furthermore, the apparatus may be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and, as such, the spatially relative descriptors used herein interpreted accordingly. The terminology used herein is for the purpose of describing particular embodiments and is not intended to be limiting. As used herein, the singular forms, “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It is also noted that, as used herein, the terms “substantially,” “about,” and other similar terms, are used as terms of approximation and not as terms of degree, and, as such, are utilized to account for inherent deviations in measured, calculated, and/or provided values that would be recognized by one of ordinary skill in the art. Various exemplary embodiments are described herein with reference to sectional and/or exploded illustrations that are schematic illustrations of idealized exemplary embodiments and/or intermediate structures. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, exemplary embodiments disclosed herein should not necessarily be construed as limited to the particular illustrated shapes of regions, but are to include deviations in shapes that result from, for instance, manufacturing. In this manner, regions illustrated in the drawings may be schematic in nature and the shapes of these regions may not reflect actual shapes of regions of a device and, as such, are not necessarily intended to be limiting. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure is a part. Terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and should not be interpreted in an idealized or overly formal sense, unless expressly so defined herein. Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, the embodiments are merely described below, by referring to the figures, to explain aspects of the present description. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression “at least one of a, b or c” indicates only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof. As the inventive concepts allow for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the written description. Effects and features of the inventive concepts and methods of achieving the same will be apparent with reference to embodiments and drawings described below in detail. The inventive concepts may, however, be embodied in many different forms and should not be construed as being limited to the exemplary embodiments set forth herein. The disclosure will now be described more fully with reference to the accompanying drawings, in which embodiments of the disclosure are illustrated. Like reference numerals in the drawings denote like elements, and thus their description will be omitted. In the following embodiments, while such terms as “first,” “second,” etc., may be used to describe various elements, such elements must not be limited to the above terms. In the following embodiments, an expression used in the singular encompasses the expression of the plural, unless it has a clearly different meaning in the context. In the following embodiments, it is to be understood that the terms such as “including” and “having” are intended to indicate the existence of the features, or elements disclosed in the inventive concepts, and are not intended to preclude the possibility that one or more other features or elements may exist or may be added. It will be understood that when a layer, region, or component is referred to as being formed on another layer, region, or component, it can be directly or indirectly formed on the other layer, region, or component. That is, for example, intervening layers, regions, or components may be present. Sizes of components in the drawings may be exaggerated for convenience of explanation. In other words, because sizes and thicknesses of components in the drawings are arbitrarily illustrated for convenience of explanation, the following embodiments are not limited thereto. When a certain embodiment may be implemented differently, a specific process order may be performed differently from the described order. For example, two consecutively described processes may be performed substantially at the same time or performed in an order opposite to the described order. In the disclosure, “A and/or B” may include “A”, “B”, or “A and B”. In addition, “at least one of A and B” may include “A”, “B”, or “A and B”. It will be understood that when a layer, region, or component is referred to as being connected to another layer, region, or component, it can be directly or indirectly connected to the other layer, region, or component. That is, for example, intervening layers, regions, or components may be present. For example, it will be understood that when a layer, region, or component is referred to as being electrically connected to another layer, region, or component, it can be directly or indirectly electrically connected to the other layer, region, or component. That is, for example, intervening layers, regions, or components may be present. The x-axis, the y-axis and the z-axis are not limited to three axes of the rectangular coordinate system, and may be interpreted in a broader sense. For example, the x-axis, the y-axis, and the z-axis may be perpendicular to one another, or may represent different directions that are not perpendicular to one another. In the inventive concepts, “pixel” refers to “sub-pixels” that emit light of different colors from each other. For example, each pixel may be one of a blue (B) sub-pixel, a green (G) sub-pixel, and a red (R) sub-pixel. Hereinafter, embodiments of the inventive concepts will be described in detail below with reference to the accompanying drawings. FIG.1is a schematic perspective view of a portion illustrating a display apparatus1according to an embodiment. As illustrated inFIG.1, the display apparatus1according to an embodiment has a display area DA which emits light and a non-display area NDA which does not emit light. A lower substrate100may include the display area DA and the non-display area NDA. Although the display apparatus1in which the display area DA has a rectangular shape is illustrated inFIG.1, the shape of the display area DA may include an arbitrary shape such as a circular shape, an oval shape, a polygonal shape, or the like. Hereinafter, the display apparatus1according to an embodiment is described as an organic light-emitting display apparatus as an example, but is not limited thereto. The display apparatus1may be an inorganic light-emitting display apparatus, a quantum dot light-emitting display apparatus, or the like. For example, an emission layer of a display element in the display apparatus1may include an organic material, an inorganic material, a quantum dot, an organic material and a quantum dot, an inorganic material and a quantum dot, or an organic material and an inorganic material and a quantum dot. Pixels P may be located in the display area DA at a point where a scan line (not illustrated) extending in a y-axis direction and a data line (not illustrated) extending in an x-axis direction intersect. Each pixel P may include a pixel circuit connected to a scan line and a data line and an organic light-emitting diode as a first display element through a third display element connected to the pixel circuit. FIG.2is a schematic cross-sectional view of a portion of the display apparatus1ofFIG.1. As illustrated inFIG.2, the display apparatus1according to an embodiment may have a display unit10and a color filter unit20. The display unit10includes the lower substrate100. A first pixel PX1through a third pixel PX3may be arranged on the lower substrate100of the display unit10. Each of the first pixel PX1through the third pixel PX3may be a pixel emitting light of a different color form each other on the lower substrate100. For example, the first pixel PX1may emit light of a first color (for example, blue), a second pixel PX2may emit light of a second color (for example, green), and the third pixel PX3may emit light of a third color (for example, red). To this end, the first pixel PX1may include a first display element, the second pixel PX2may include a second display element, and the third pixel PX3may include a third display element. The color filter unit20includes an upper substrate400. A first color filter unit310through a third color filter unit330may be located on a first surface which is a lower surface of the upper substrate400of the color filter unit20. The color filter unit20may be separately manufactured by directly forming the first through third filter units310,320, and330on the first surface which is the lower surface of the upper substrate400. At this time, a direction in which the upper substrate400is arranged in an operation of manufacturing the color filter unit20is not limited. In other words, the color filter unit20may be manufactured by forming the first through third filter units310,320, and330on the first surface in a state in which the first surface, which is the lower surface of the upper substrate400, is arranged to face down (to face a −z-axis direction), or may be manufactured by forming the first through third filter units310,320, and330on the first surface in a state in which the first surface, which is the lower surface of the upper substrate400, is arranged to face upward (to face a +z-axis direction). Detailed descriptions with respect to structures of the display unit10and the color filter unit20will be described below with reference toFIGS.4to13. The display apparatus1may be manufactured by bonding the display unit10and the color filter unit20such that each of the first through third color filter units310,320, and330corresponds to the first pixel PX1through the third pixel PX3. At this time, the color filter unit20may be arranged above the display unit10. In detail, the color filter unit20may be arranged such that the first color filter unit310through the third color filter unit330overlap and are located above the first display element through the third display element of the display unit10. In an embodiment, the display apparatus1may further include an adhesive layer30arranged between the display unit10and the color filter unit20and configured to assist the bonding of the display unit10and the color filter unit20. For example, the adhesive layer30may include an optical clear adhesive (OCA), but is not limited thereto. In addition, the adhesive layer30may include a filler (not illustrated). The filler may be located between the display unit10and the color filter unit20and act as a buffer against external pressure or the like. The filler may include an organic material such as methyl silicone, phenyl silicone, polyimide, or the like, a urethane resin, an epoxy resin, an acrylic resin, which are an organic sealant, or silicon or the like which is an inorganic sealant, but is not limited thereto. In an optional embodiment, the adhesive layer30may be omitted. FIG.3is a schematic layout diagram of an arrangement of pixels in the display apparatus1ofFIG.1. The display apparatus1according to an embodiment may include one or more pixels in a unit pixel area. The “unit pixel area” is an area in which a pixel set including one or more pixels is arranged, and may be repeatedly or periodically located in the display area DA. The size, number, shape, and arrangement of the unit pixel areas, and the size, number, shape, and arrangement of pixels located in the unit pixel areas may be variously modified and are not limited. As a particular example, as illustrated inFIG.3, the display apparatus1may include a plurality of unit pixel areas, and a pixel set including the first pixel PX1through the third pixel PX3may be located in each of the plurality of unit pixel areas. This is only an example, and the display apparatus1may include more or fewer pixels. The first display element through the third display element of the display unit10and the first color filter unit310through the third color filter unit330of the color filter unit20may correspond to be included in the first pixel PX1through the third pixel PX3. The first display element through the third display element corresponding to the first color filter unit310through the third color filter unit330refers to that the first display element through the third display element overlap the first color filter unit310through the third color filter unit330when viewing in a direction (a z-axis direction) perpendicular to the lower substrate100or the upper substrate400. In detail, when viewing in the direction (the z-axis direction) perpendicular to the lower substrate100or the upper substrate400, the first color filter unit310may overlap a first pixel electrode211of the first display element, the second color filter unit320may overlap a second pixel electrode213of the second display element, and the third color filter unit330may overlap a third pixel electrode215of the third display element. AlthoughFIGS.2to13illustrate that the first pixel PX1through the third pixel PX3are adjacent to each other, the inventive concepts are not limited thereto. In other words, other components such as other lines may be arranged between the first pixel PX1through third pixel PX3. Accordingly, for example, the first pixel PX1and the second pixel PX2may not be pixels located adjacent to each other. In addition, cross-sections of the first pixel PX1through the third pixel PX3inFIGS.2to13may not be cross-sections in the same direction. FIG.4is a cross-sectional view of the display apparatus1taken along line I-I′ ofFIG.3. The display apparatus1according to an embodiment may include the display unit10, the color filter unit20, and the adhesive layer30. The display unit10includes the lower substrate100. The lower substrate100may include a glass material, a metal material, a ceramic material, or a material having a flexible or bendable characteristic. When the lower substrate100has a flexible or bendable characteristic, the lower substrate100may include, for example, a polymer resin such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose acetate propionate. The lower substrate100may have a single-layer or multi-layer structure including the above-stated materials. In a case of a multi-layer structure, the lower substrate100may include a multi-layer structure including two layers including a polymer resin and a barrier layer including an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, or the like) arranged between the two layers, and various modifications may be made. A buffer layer101may be formed on the lower substrate100. The buffer layer101may include an inorganic material such as silicon oxide, silicon nitride, and/or silicon oxynitride, or the like, and may include a single-layer or multi-layer structure. The buffer layer101may increase the smoothness of an upper surface of the lower substrate100, or may prevent or minimize penetration of impurities or moisture from the outside of the lower substrate100or the like into a semiconductor layer121of a thin-film transistor120. A pixel circuit may be located on the buffer layer101, and a display element layer including the first display element through the third display element which are electrically connected to the pixel circuit may be located on the pixel circuit. In addition, the pixel circuit may include the thin-film transistor120and a capacitor Cst. The first display element through the third display element being electrically connected to the pixel circuit may be understood as the first through third pixel electrodes211,213, and215of the first display element through the third display element being electrically connected to the thin-film transistor120. The thin-film transistor120may include the semiconductor layer121including amorphous silicon, polycrystalline silicon, or an organic semiconductor material, a gate electrode123, a source electrode125, and a drain electrode127. The semiconductor layer121may be located on the buffer layer101and may include amorphous silicon or polysilicon. As a particular example, the semiconductor layer121may include an oxide of at least one or more materials selected from a group including indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), aluminum (Al), cesium (Cs), cerium (Ce), and zinc (Zn). In addition, the semiconductor layer121may include a zinc-oxide-based material, and may include Zn oxide, In—Zn oxide, Ga—In—Zn oxide, or the like. In addition, the semiconductor layer121may include an In—Ga—Zn—O (IGZO), In—Sn—Zn—O (ITZO), or In—Ga—Sn—Zn—O (IGTZO) semiconductor, which include a metal such as In, Ga, and Sn in ZnO. The semiconductor layer121may include a channel area and a source area and a drain area which are respectively arranged on both sides of the channel area. The gate electrode123may be located above the semiconductor layer121to overlap at least a portion of the semiconductor layer121. The gate electrode123may include various conductive materials including molybdenum (Mo), Al, copper (Cu), Ti, or the like, and may have various layer structures. For example, the gate electrode123may include a Mo layer and an Al layer, or may have a multi-layer structure of Mo/Al/Mo. The source electrode125and the drain electrode127may also include various conductive materials including Mo, Al, Cu, Ti, or the like, and may have various layer structures. For example, the source electrode125and the drain electrode127may include a Ti layer and an Al layer, or may include a multi-layer structure of Ti/Al/Ti. The source electrode125and the drain electrode127may be connected to the source area or the drain area of the semiconductor layer121through a contact hole. To secure insulation between the semiconductor layer121and the gate electrode123, a gate insulating layer103including an inorganic material, such as silicon oxide, silicon nitride, and/or silicon oxynitride, or the like, may be arranged between the semiconductor layer121and the gate electrode123. In addition, a first interlayer insulating layer105may be located on the gate electrode123as a layer having a certain dielectric constant, and the first interlayer insulating layer105may be an insulating layer including an inorganic material such as silicon oxide, silicon nitride, and/or silicon oxynitride, or the like. The source electrode125and the drain electrode127may be located on the first interlayer insulating layer105. An insulating layer (film) including the inorganic material may be formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), or the like. The above descriptions may be similarly applied to the embodiments and modifications examples thereof to be described below. The capacitor Cst may include a first electrode CE1and a second electrode CE2. The first electrode CE1overlaps the second electrode CE2with the first interlayer insulating layer105therebetween to form a capacitance. In this case, the first interlayer insulating layer105serves as a dielectric layer of the capacitor Cst. The first electrode CE1may be located on the same layer as the gate electrode123. The first electrode CE1and the gate electrode123may include the same material and may include, for example, various conductive materials including Mo, Al, Cu, Ti, or the like, and may have various layer structures (for example, a multi-layer structure of Mo/Al/Mo, or the like). The second electrode CE2may be located on the same layer as the source electrode125and the drain electrode127. The second electrode CE2may include the same material as the source electrode125and the drain electrode127and may include, for example, various conductive materials including Mo, Al, Cu, Ti, or the like, and may have various layer structures (for example, a multi-layer structure of Ti/Al/Ti). A planarization layer109may be located on the thin-film transistor120. When an organic light-emitting diode is located on the thin-film transistor120as an example of the first display element through the third display element, the planarization layer109may substantially planarize an upper portion of a protective film covering the thin-film transistor120. The planarization layer109may include, for example, benzocyclobutene (BCB), polyimide, hexamethyldisiloxane (HDMSO), a general commercial polymer such as poly(methyl methacrylate) (PMMA) or polystyrene (PS), a polymer derivative having a phenol group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine polymer, a p-xylene polymer, a vinyl alcohol polymer, and a mixture thereof. For convenience, the planarization layer109is illustrated as a single layer inFIGS.4,12, and13, but may include a multi-layer, and various modifications may be made. The first display element through the third display element may be located on the planarization layer109. The first display element through the third display element may be an organic light-emitting diode having first through third pixel electrodes211,213, and215, an opposite electrode230, and an intermediate layer220arranged between the first through third pixel electrodes211,213, and215and the opposite electrode230and including an emission layer. As an embodiment, the first display element through the third display element may include the first pixel electrode211through the third pixel electrode215, the opposite electrode230corresponding to the first pixel electrode211through the third pixel electrode215, and the intermediate layer220arranged between the first pixel electrode211through the third pixel electrode215and opposite electrode230. In addition, the intermediate layer220may include a first-color emission layer that emits light having a wavelength in a first wavelength band. For example, the first wavelength band may be about 450 nm to about 495 nm, and the first color may be blue, but are not limited thereto. The first through third pixel electrodes211,213, and215of the first display element through the third display element may be electrically connected to the thin-film transistor120by contacting any one of the source electrode125and the display element through an opening portion (contact hole) formed in the planarization layer109or the like. The first through third pixel electrodes211,213, and215may be (semi)transparent electrodes or reflective electrodes. In some embodiments, the first through third pixel electrodes211,213, and215may include a reflective layer including silver (Ag), magnesium (Mg), Al, platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chrome (Cr), or a compound thereof, and a transparent or semi-transparent electrode layer on the reflective layer. The transparent or semi-transparent electrode layer may include at least one selected from a group including indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3) indium gallium oxide (IGO), and aluminum zinc oxide (AZO). In addition, the first through third pixel electrodes211,213, and215may have a stacked structure of ITO/Ag/ITO. A pixel defining film110may be located on the planarization layer109. The pixel defining film110may define a pixel (or an emission area) by having openings corresponding to each sub-pixel. At this time, the openings may be formed to expose at least a portion of central portions of the first through third pixel electrodes211,213, and215. For example, the pixel defining film110may be located between the first display element and the second display element, between the second display element and the third display element, and between the first display element and the third display element. The pixel defining film110may prevent an arc or the like from being generated at edges of the first through third pixel electrodes211,213, and215by increasing a distance between the edges of the first through third pixel electrodes211,213, and215and the opposite electrode230above the first through third pixel electrodes211,213, and215. The pixel defining film110may include one or more organic insulating materials selected from a group including polyamidem polyimide, an arcrylic resin, BCB, and a phenol resin, and may be formed by a spin coating method or the like. The intermediate layer220of the first display element through the third display element may include a low-molecular-weight material or a polymer material. When the intermediate layer220includes a low-molecular-weight material, the intermediate layer220may include a structure in which a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), an electron injection layer (EIL), or the like are stacked in a single or complex structure, and may be formed by a method of vacuum deposition. When the intermediate layer220includes a polymer material, the intermediate layer220may have a structure including a HTL and an EML. The HTL may include poly(3,4-ethylenedioxythiophene) (PEDOT), and the EML may include a polymer material such as poly(p-phenylene vinylene) (PPV), polyfluorene, or the like. The intermediate layer220may be formed by a screen printing method, an inkjet printing method, a vapor deposition method, a laser induced thermal imaging (LITI) method, or the like. The intermediate layer220is not limited thereto and may have various structures. As described above, the intermediate layer220may include a single layer over the first pixel electrode211of the first display element extending to third pixel electrode215of the third display element, but according to additional embodiments, the intermediate layer220may include a layer patterned to correspond to each of the first pixel electrode211through the third pixel electrode215. In any case, the intermediate layer220includes the first-color emission layer. The first-color emission layer may be integral over the first pixel electrode211through the third pixel electrode215, and according to additional embodiments, the first-color emission layer may be patterned to correspond to each of the first pixel electrode211through the third pixel electrode215. The first-color emission layer may emit light having a wavelength in the first wavelength band, for example, may emit light having a wavelength in about 450 nm to about 495 nm. The opposite electrode230of the first display element through the third display element is located above a display area. As a particular example, the opposite electrode230may include a single layer to cover an entire surface of the display area and may be arranged above the display area. In other words, the opposite electrode230may be formed integrally over a plurality of first display elements through third display elements to correspond to a plurality of first through third pixel electrodes211,213, and215. At this time, the opposite electrode230may be formed to cover the display area and extend to a portion of a non-display area outside the display area. As another example, the opposite electrode230may be formed by being patterned to correspond to each of the plurality of first through third pixel electrodes211,213, and215. The opposite electrode230may be a transparent electrode or a reflective electrode. In some embodiments, the opposite electrode230may be a transparent or a semi-transparent electrode, and include a metal thin film having a small work function and including lithium (Li), calcium (Ca), lithium fluoride (LiF)/Ca, LiF/Al, Al, Ag, Mg, and a compound thereof. In addition to the metal thin film, a transparent conductive oxide (TCO) film such as ITO, IZO, ZnO, or In2O3may be further included. Because the organic light-emitting diode may be easily damaged by moisture or oxygen or the like from the outside, the organic light-emitting diode may be covered and protected by an encapsulation layer130. The encapsulation layer130includes at least one organic encapsulation layer and at least one inorganic encapsulation layer. For example, the encapsulation layer130may include a first inorganic encapsulation layer131, an organic encapsulation layer133, and a second inorganic encapsulation layer135. The first inorganic encapsulation layer131may cover the opposite electrode230and may include silicon oxide, silicon nitride, and/or silicon oxynitride, or the like. Other layers (not illustrated) such as a capping layer or the like may be located between the first inorganic encapsulation layer131and the opposite electrode230. Because the first inorganic encapsulation layer131is formed along a structure thereunder, an upper surface of the first inorganic encapsulation layer131is not formed flat. Therefore, the organic encapsulation layer133is formed to cover the first inorganic encapsulation layer131. The organic encapsulation layer133has an approximately flat upper surface. Accordingly, the encapsulation layer130may have a flat upper surface by including the organic encapsulation layer133. The inorganic encapsulation layer133may include one or more materials selected from a group including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, and hexamethyldisiloxane. The second inorganic encapsulation layer135may cover the organic encapsulation layer133and may include silicon oxide, silicon nitride, silicon oxynitride, silicon oxynitride, or the like. According to the above-stated multi-layer structure, even when cracks occur in the encapsulation layer130, the encapsulation layer130may prevent the cracks from connecting between the first inorganic encapsulation layer131and the organic encapsulation layer133or between the organic encapsulation layer133and the second inorganic encapsulation layer135. Accordingly, the formation of a path, through which external moisture or oxygen, or the like may penetrate, may be prevented or minimized. The color filter unit20includes the upper substrate400. The first color filter unit310through the third color filter unit330which correspond to the first pixel PX1through the third pixel PX3are located on a first surface of the upper substrate400. In this case, the “first surface” refers to a surface (lower surface) in a direction of the display unit10when the color filter unit20is arranged above the display unit10. The first color filter unit310through the third color filter unit330may be located to overlap the first pixel electrode211or an emission layer of the first display element through the third display element or an emission layer of the third pixel electrode215, when viewing in a direction (z-axis direction) perpendicular to the lower substrate100of the display unit10or the upper substrate400of the color filter unit20. Accordingly, the first color filter unit310through the third color filter unit330may filter light emitted from each of the first display element through the third display element. The first color filter unit310through the third color filter unit330may include a first-color color filter layer311through a third-color color filter layer331located on the first surface, which is the lower surface of the upper substrate400, a transparent layer313located above the first-color color filter layer311, a second color quantum dot layer323located above the second-color color filter layer321, and a third color quantum dot layer333located above the third-color color filter layer331. In detail, the first color filter unit310may include the first-color color filter layer311and the transparent layer313, the second color filter unit320may include the second-color color filter layer321and the second color quantum dot layer323, and the third color filter unit330may include the third-color color filter layer331and the third color quantum dot layer333. The first-color color filter layer311may only allow light having a wavelength in about 450 nm to about 495 nm to pass through, the second-color color filter layer321may only allow light having a wavelength in about 495 nm to about 570 nm to pass through, and the third-color color filter layer331may only allow light having a wavelength in about 630 nm to about 780 nm to pass through. The first-color color filter layer311through the third-color color filter layer331may reduce external light reflection in the display apparatus1. For example, when external light reaches the first-color color filter layer311, only light having a predetermined wavelength as described above passes through the first-color color filter layer311, and light of other wavelengths is absorbed by the first-color color filter layer311. Accordingly, only light having a predetermined wavelength as described above among the external light incident on the display apparatus1passes through the first-color color filter layer311, and a portion of the light passing through the first-color color filter layer311is reflected by the opposite electrode230or the first pixel electrode211of the first display element thereunder and is emitted to the outside again. As a result, because only a portion of external light incident on a place where the first pixel PX1is located is reflected to the outside, the first-color color filter layer311may reduce the external light reflection. The above descriptions may be applied to the second-color color filter layer321and the third-color color filter layer331in the same way. The second color quantum dot layer323may convert light having a wavelength in the first wavelength band generated in the intermediate layer220of the second display element into light having a wavelength in a second wavelength band. For example, when light having a wavelength in about 450 nm to about 495 nm is generated in the intermediate layer220of the second display element, the second color quantum dot layer323may convert the light into light having a wavelength in about 495 nm to about 570 nm. Accordingly, the light having a wavelength in about 495 nm to about 570 nm is emitted from the second pixel PX2to the outside. The third color quantum dot layer333may convert light having a wavelength in the first wavelength band generated in the intermediate layer220of the third display element into light having a wavelength in a third wavelength band. For example, when light having a wavelength in about 450 nm to about 495 nm is generated in the intermediate layer220of the third display element, the third color quantum dot layer333may convert the light into light having a wavelength in about 630 nm to about 780 nm. Accordingly, the light having a wavelength in about 630 nm to about 780 nm is emitted from the third pixel PX3to the outside. Each of the second color quantum dot layer323and the third color quantum dot layer333may have a shape in which quantum dots are dispersed in a resin. The size of the quantum dots may be several nanometers, and the wavelength of light after conversion is changed according to the particle size of the quantum dots. In other words, the quantum dots may control the color of light emitted according to the particle size of the quantum dots, and accordingly, the quantum dots may have various emission colors such as blue, red, green, or the like. The particle size of the quantum dots may have a full width of half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, preferably about 40 nm or less, and more preferably about 30 nm or less. Color purity and color reproducibility may be improved in the above range. In addition, as light emitted through the quantum dots is emitted in all directions, a viewing angle of light may be improved. In addition, a form of the quantum dots may be a form that is generally used in the art and is not particularly limited, and more particularly, the form of the quantum dots may include a sphere shape, a pyramid shape, a multi-arm shape, or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanoplatelets, or the like. In addition, the quantum dots may include a semiconductor material such as cadium sulfide (CdS), cadium telluride (CdTe), zinc sulfide (AnS), indium phosphide (InP), or the like. The resin included in the second color quantum dot layer323and the third color quantum dot layer333may be any material as along as being a transparent material. For example, a polymer resin such as a silicone resin, an epoxy resin, acrylic, BCB, HMDSO, or the like may be used as materials forming the second color quantum dot layer323and the third color quantum dot layer333. The first color filter unit310may not include a quantum dot layer, and may include a transparent layer313. For example, the display unit10may include an intermediate layer220arranged between the first pixel electrode211through the third pixel electrode215of the first display element through the third display element and the opposite electrode230and including a first-color emission layer emitting light having a wavelength in the first wavelength band. In this case, light having a wavelength in the first wavelength band generated in the intermediate layer220is emitted from the first pixel PX1to the outside without wavelength conversion. Accordingly, because a quantum dot layer may not be used in the first pixel PX1, the first color filter unit310may include the transparent layer313including a transparent resin instead of the quantum dot layer. As an embodiment, the transparent layer313may have one or more protrusions PR in a direction away from the first surface of the upper substrate400. The protrusions PR of the transparent layer313may serve as a support when the display unit10and the color filter unit20are bonded. That is, the protrusions PR of the transparent layer313may maintain and support a distance between the display unit10and the color filter unit20over a certain distance. To this end, the protrusions PR may be formed such that an end portion thereof is located in a position most far away from the first surface of the upper substrate400and may contact an uppermost layer of the display unit10when the color filter unit20is arranged on the display unit10. Preferably, the protrusions PR of the transparent layer313have a small brittleness and a certain level of elasticity so as not to be destroyed when an external force is applied. For example, the transparent layer313may include a polymer resin such as a silicone resin, an epoxy resin, acrylic, BCB, HMDSO, or the like. In an optional embodiment, the transparent layer313may include scattering particles, and a detailed description thereof will be described below with reference toFIG.5. Preventing the second color quantum dot layer323and the third color quantum dot layer333from being damaged in a manufacturing operation or a use operation after the manufacturing operation is desired according to embodiments described herein. To this end, the color filter unit20may further include a first protective layer IL1arranged between the first-color color filter layer311and the transparent layer313and covering an upper surface of the second color quantum dot layer323and an upper surface of the third color quantum dot layer333. In other words, the first protective layer IL1may be formed to be arranged between the first-color color filter layer311and the transparent layer313and cover a surface of the second color quantum dot layer323in a direction of the second display element and a surface of the third color quantum dot layer333in a direction of the third display element. When the quantum dots in the second color quantum dot layer323are damaged, the second color quantum dot layer323may not be able to convert light in the first wavelength band into light in the second wavelength band. Accordingly, preventing the quantum dots in the second color quantum dot layer323from being damaged by out-gas generated from the second-color color filter layer321is desired according to embodiments described herein. Similarly, when the quantum dots in the third color quantum dot layer333are damaged, the third color quantum dot layer may not be able to convert light in the first wavelength band into light in the third wavelength band. Accordingly, preventing the quantum dots in the third color quantum dot layer333from being damaged by out-gas generated from the third-color color filter layer331is desired according to embodiments described herein. To this end, the first protective layer IL1may be arranged between the second-color color filter layer321and the second color quantum dot layer323, and may also be arranged between the third-color color filter layer331and the third color quantum dot layer333. The first protective layer IL1may include an inorganic material such as silicon oxide, silicon nitride, or silicon oxynitride to block gas passage. In addition, the first protective layer IL1may include an organic material including one or more materials selected from a group including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, and HMDSO. Also, the first protective layer IL1may be integral over an entire surface of the upper substrate400. In the display apparatus1according to the present embodiment, light in the first wavelength band is emitted from the first pixel PX1to the outside, light in the second wavelength band is emitted from the second pixel PX2to the outside, and light in the third wavelength band is emitted from the third pixel PX3to the outside. Accordingly, the display apparatus1according to the present embodiment may display a full color image. FIG.5is a schematic cross-sectional view of the display apparatus1of an example of portion A ofFIG.4. As illustrated inFIG.5, the transparent layer313included in the first color filter unit310of the color filter unit20according to an embodiment may include scattering particles SP. The scattering particles SP may reduce a brightness ratio of a front surface of light emitted from a pixel electrode to a side surface of light emitted from a pixel. In each pixel, as light generated from a pixel electrode passes through a filter unit to be emitted to the outside, the brightness of light with respect to the front surface is high and the brightness of light with respect to the side surface is relatively low, and thus a brightness ratio of light with respect to the front surface and the side surface is obtained. As a result, a decrease in performance of a display apparatus may occur, such as a reduced viewing angle, a wrong color coordinate, or the like. As the transparent layer313includes the scattering particles to allow light passing through the transparent layer313to be scattered by the scattering particles SP, the color filter unit20or the display apparatus1according to an embodiment may reduce a brightness ratio of light with respect to the front surface and the side surface. For example, the scattering particles SP may be titanium oxide (TiO2), metal particles, or the like. In addition, the transparent layer313may be a photosensitive polymer in which the scattering particles SP are dispersed. At this time, the photosensitive polymer may include an organic material having light transmittance, such as a silicon resin, an epoxy resin, or the like. FIGS.6to11each illustrate a schematic cross-sectional view of a portion of an operation of manufacturing the color filter unit20included in the display apparatus1ofFIG.1. As illustrated inFIG.6, the first-color color filter layer311through the third-color color filter layer331are formed on the first surface of the upper substrate400. In particular, second partitions B2are formed on the first surface of the upper substrate400. The second partitions B2may be arranged to be apart from each other on the first surface of the upper substrate400and may define a first color area through a third color area. In other words, the second partitions B2define the first color area through the third color area in separation areas between adjacent second partitions B2, and the first color area through the third color area correspond to the first pixel PX1through the third pixel PX3. The second partitions B2may be patterned to correspond to a non-emission area of the display unit10to serve as a light blocking layer when the display unit10and the color filter unit20are bonded. In other words, light may be emitted from a display element layer of the display unit10to the outside only through the first color area through the third color area, which are areas (hereinafter, separation areas) in which the second partitions B2are not located. The second partitions B2may include a material (photoresist) that causes chemical changes when light is irradiated. For example, the second partitions B2may include, as a negative-type photoresist, aromatic bisazide, methacrylic acid ester, cinnamic acid ester, or the like, and may include, as a positive-type photoresist, poly(methylmethacrylate), naphthoquinonediazide, polybutene-1-sulfone, or the like, but are not limited thereto. In addition, in an optional embodiment, the second partitions B2may include a black matrix, a black pigment, a metal material, or the like to act as a light blocking layer, and may include a material having reflexibility, such as Al, Ag, or the like, to increase light efficiency. The first-color color filter layer311through the third-color color filter layer331are formed between the second partitions B2to correspond to the first pixel PX1through the third pixel PX3. For example, the first-color through third-color color filter layers311,321, and331may be formed by an inkjet operation, but are not limited thereto. A second protective layer IL2may be formed on the first-color through third-color color filter layers311,321, and331to cover the second partitions B2and the first-color through third-color color filter layers311,321, and331. For example, the second protective layer IL2may include a material such as silicon oxide, silicon nitride, silicon oxynitride, or the like, as an inorganic insulating material having light transmittance. Subsequently, as illustrated inFIG.7, first partitions B1are formed on the second protective layer IL2to correspond to the second partitions B2. In other words, the first partitions B1is located on the second partitions B2to overlap the second partitions B2when viewing in a direction (z-axis direction) perpendicular to the upper substrate400. In addition, the first partitions B1may overlap a portion of adjacent color filter layers. The first partitions B1may include the same material as the second partitions B2. For example, the first partitions B1may include, as a negative-type photoresist, aromatic bisazide, methacrylic acid ester, cinnamic acid ester, or the like, and may include, as a positive-type photoresist, poly(methylmethacrylate), naphthoquinonediazide, polybutene-1-sulfone, or the like. Then, as illustrated inFIG.8, the second color through the third color quantum dot layers323and333are formed in separation areas between the first partitions B1with respect to the second color area and the third color area. In other words, the second color quantum dot layer323is formed to overlap the second-color color filter layer321of the second color area, and the third color quantum dot layer333is formed to overlap the third-color color filter layer331of the third color area. For example, the second color through the third color quantum dot layers323and333may be formed by an inkjet operation, but are not limited thereto. Next, as illustrated inFIG.9, the first protective layer IL1is formed as integral over the entire surface of the upper substrate400to cover the first partitions B1and the second color through the third color quantum dot layers323and333. At this time, the first protective layer IL1is formed to contact the second protective layer IL2in the first color area where a quantum dot layer is not formed. For example, the first protective layer IL1may include a material such as silicon oxide, silicon nitride, silicon oxynitride, or the like, as an inorganic insulating material having light transmittance. Subsequently, as illustrated inFIG.10, a transparent material layer TR, which is a layer including a transparent material, is formed on the first protective layer IL1over the entire surface of the upper substrate400. In other words, the transparent layer313(illustrated inFIGS.4,12, and13) may be formed by forming the transparent material layer TR including the transparent material over the entire surface of the upper substrate400and then patterning the transparent material layer by using a mask. As described above, the transparent layer313is formed separately from the second color quantum dot layer323through the third color quantum dot layer333using a mask operation instead of the inkjet operation, and thus, a defect rate such as color mixing defects or the like which may occur during the inkjet operation when forming the second color quantum dot layer323through the third color quantum dot layer333may be significantly reduced. The transparent layer313may include an organic material such as a polymer resin, such as a silicone resin, an epoxy resin, acrylic, BCB, HMDSO, or the like. The organic material has a planarizing characteristic, and adjusting the flatness of the transparent material layer is desired such that the transparent layer313includes protrusions PR. For example, the composition ratio, viscosity, or the like of materials included in the transparent material layer may be adjusted, but are not limited thereto. In addition, as described above, the transparent material may include the scattering materials SP. Next, as illustrated inFIG.11, the transparent material layer TR is patterned into the transparent layer313by using a mask. In detail, a photosensitive film (not illustrated) is formed on the transparent material layer and the photosensitive film is patterned by using a mask (not illustrated) to form a photosensitive film pattern corresponding to a pattern of the transparent layer313, and then the transparent material layer is patterned. At this time, the mask may refer to a mask assembly including a frame having one or more openings (open areas) and a mask having one or more opening portions formed according to a certain pattern. In addition, according to example embodiments, a half-tone mask may be used. Also, the photosensitive film may include a material (photoresist) that causes chemical changes when light is irradiated. For example, the photosensitive film may include, as a negative-type photoresist, aromatic bisazide, methacrylic acid ester, cinnamic acid ester, or the like, and may include, as a positive-type photoresist, poly(methylmethacrylate), naphthoquinonediazide, polybutene-1-sulfone, or the like, but are not limited thereto. The transparent layer313formed as described above may include one or more protrusions PR, and the number, shape, height, location, or the like of the protrusions PR are not limited. For example, the protrusions PR may be formed on one or more of the adjacent first partitions B1. In other words, the transparent layer313may overlap the first-color color filter layer311, overlap one or more of the adjacent first partitions B1, have a curve, and a shape in which a certain portion protrudes. For example, the transparent layer313may have a shape having a lowest point at a portion overlapping a central portion of the first-color color filter layer311and a highest point at a particular position of a portion overlapping the second partition B2, wherein the shape becomes higher in a direction away from the central portion of the first-color color filter layer311and decreases in height again after the highest point. FIG.12is a schematic cross-sectional view illustrating a portion of a display apparatus according to another embodiment. For example, as illustrated inFIG.12, a protrusion PR of the transparent layer313may be located only above one of the adjacent first partitions B1on a cross-sectional view. FIG.13is a schematic cross-sectional view illustrating a portion of the display apparatus1according to another embodiment. The color filter unit20or the display apparatus1may further include a spacer340. The spacer340may serve as a support that is similar to the protrusion PR of the transparent layer313described above. In other words, the spacer340may maintain a distance between the display unit10and the color filter unit20over a certain distance. The spacer340may be located above the first partition B1of the color filter unit20. The spacer340may be arranged between the pixel defining film110of the display unit10and the first partition B1of the color filter unit20when the display unit10and the color filter unit20are bonded. At this time, the spacer340may contact the uppermost layer of the display unit10and act as a support. For example, the spacer340may be arranged between the pixel defining film110and the first partition B1, the pixel defining film110being between the first display element and the second display element of the display unit10, and the first partition B1being between the transparent layer313and the second color quantum dot layer323of the color filter unit20. However, the spacer340is not limited thereto, and may be arranged between the pixel defining film110and the first partition B1, the pixel defining film110being between the first display element and the third display element of the display unit10, and the first partition being between the transparent layer313and the third color quantum dot layer333of the color filter unit20. In addition, a plurality of spacers340may be included. The spacer340may be simultaneously formed when the transparent layer313is formed. In other words, in an operation of patterning a transparent material layer, the transparent layer313and the spacer340in an isolated shape may be formed at once. In this case, the layer structure of the spacer340may be the same as the layer structure of the transparent layer313. In addition, the spacer340may include the same material as the transparent layer313. When the transparent layer313includes the scattering particles SP, the spacer340may also include the scattering particles SP. Accordingly, the spacer340and the transparent layer313may not be separately formed, and thus, operation efficiency may be improved. The number of the protrusions of the transparent layer313and/or spacers340may be adjusted according to example embodiments. As the number of protrusions and/or spacers340increases, the function of the support is strengthened, but the flow of a material (for example, the filler, or the like) in a liquid state desired in an operation may be hindered, and thus, the number of protrusions and/or spacers340in an appropriate level may be adjusted according to device desire. As an example, the protrusions of the transparent layer313and/or the spacer340may be selectively formed on all or a portion of pixels included in the display apparatus1. For example, the protrusions of the transparent layer313and/or the spacer340may be periodically formed in a unit of a certain number (for example, 4×4, 5×5, or the like). That is, the protrusions of the transparent layer313may be selectively arranged with respect to a plurality of pixels according to a predetermined period or pattern. As another example, the number, shape, height, location, or the like of the protrusions of the transparent layer313and/or the spacers340in pixels, in which the protrusions of the transparent layer313and/or the spacers340are located, may be variously designed. For example, one or more protrusions of the transparent layer313, one or more spacers340, or one or more protrusions of the transparent layer313and one or more spacers340may be located in a selected pixel according to a predetermined period or pattern. A color filter unit and a display apparatus are mainly described, but the disclosure is not limited thereto. For example, a color filter unit manufacturing method of manufacturing the color filter unit and a display apparatus manufacturing method of manufacturing the display apparatus also belong to the scope of the inventive concepts. According to the above-stated embodiment, a color filter unit having an improved defect rate and an improved viewing angle, and a display apparatus including the color filter unit may be implemented. The scope of the inventive concepts are limited by these effects. It should be understood that embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should typically be considered as available for other similar features or aspects in other embodiments. While one or more embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope as defined by the following claims. Some of the advantages that may be achieved by exemplary implementations/embodiments of the invention and/or exemplary methods of the invention include *** Although certain exemplary embodiments and implementations have been described herein, other embodiments and modifications will be apparent from this description. Accordingly, the inventive concepts are not limited to such embodiments, but rather to the broader scope of the appended claims and various obvious modifications and equivalent arrangements as would be apparent to a person of ordinary skill in the art. | 62,351 |
11943989 | DETAILED DESCRIPTION In order to make objects, technical details and advantages of the embodiments of the disclosure apparent, the technical solutions of the embodiments will be described in a clearly and fully understandable way in connection with the drawings related to the embodiments of the disclosure. Apparently, the described embodiments are just a part but not all of the embodiments of the disclosure. Based on the described embodiments herein, those skilled in the art can obtain other embodiment (s), without any inventive work, which should be within the scope of the disclosure. Unless otherwise defined, all the technical and scientific terms used herein have the same meanings as commonly understood by one of ordinary skill in the art to which the present disclosure belongs. The terms “first,” “second,” etc., which are used in the description and the claims of the present application for disclosure, are not intended to indicate any sequence, amount or importance, but distinguish various under-screen texture recognition function components. Similarly, the terms “a”, “a” or “the” etc. are not intended to indicate a quantitative limit, but indicate the existence of at least one. The terms “comprise,” “comprising,” “include,” “including,” etc., are intended to specify that the components or the objects stated before these terms encompass the components or the objects and equivalents thereof listed after these terms, but do not preclude the other components or objects. The phrases “connect” or “connected”, etc., are not intended to define a physical connection or mechanical connection, but may include an electrical connection, directly or indirectly. “On,” “under,” “left,” “right” and the like are only used to indicate relative position relationship, and when the position of the object which is described is changed, the relative position relationship may be changed accordingly. FIG.1is a front view of a display module (i.e., a schematic plan view obtained through observing the display module from the front of the display module). For example, the display module may be an active matrix organic light emitting diode display screen, and the display screen is a non-curved screen. As illustrated inFIG.1, the display module comprises a display substrate501(for example, an organic light emitting diode display panel) and a touch sensor502disposed at the display side of the display substrate501. As illustrated inFIG.1, the display module further comprises a first flexible circuit board504(i.e., a circuit board for the touch sensor) and a fourth flexible circuit board505(e.g., chip on film). It should be noted that both of the first flexible circuit board504and the fourth flexible circuit board505of the display module as illustrated inFIG.1are not in a bending state. FIG.2Ais a front view of the touch sensor502and the first flexible circuit board504of the display module as illustrated inFIG.1. It should be noted that the first flexible circuit board504as illustrated inFIG.2Ais not in a bending state. As illustrated inFIG.2A, the touch sensor502has a first side591and a second side592in the second direction D2, the touch sensor502comprises a first bonding region503at the first side591, and the first flexible circuit board504is electrically connected with the touch sensor502through the first bonding region503only. FIG.2Bis a front view of the display substrate501and the fourth flexible circuit board505of the display module as illustrated inFIG.1. It should be noted that the fourth flexible circuit board505as illustrated inFIG.2Bis not in a bending state. As illustrated inFIG.2B, the display substrate501comprises a second bonding region593at the first side591, and the fourth flexible circuit board505is electrically connected with the display substrate501through the second bonding region593. As illustrated inFIG.2B, the fourth flexible circuit board505further comprises a drive chip506. FIG.2Cis a cross-sectional schematic diagram of the display module as illustrated inFIG.1, and the cross-sectional schematic diagram as illustrated inFIG.2Cis taken along the line AA′ inFIG.1. It should be noted that neither the first flexible circuit board504nor the fourth flexible circuit board505of the display module as illustrated inFIG.1is in a bending state. As illustrated inFIG.2C, the touch sensor502overlaps with the display substrate501in a third direction D3, and the touch sensor502is located on the display side (i.e., the light emitting side or the image outputting side) of the display substrate501in the third direction D3. FIG.2Dis another cross-sectional schematic diagram of the display module as illustrated inFIG.1. Compared with the cross-sectional schematic diagram as illustrated inFIG.2C, both the first flexible circuit board504and the fourth flexible circuit board505in the cross-sectional schematic diagram as illustrated inFIG.2D, are in a bending state. As illustrated inFIG.2D, a portion of the fourth flexible circuit board505(the main body of the fourth flexible circuit board505) and a portion of the first flexible circuit board504are both at the back of the display substrate501(that is, the side, which is away from the touch sensor502, of the display substrate501) after bending. FIG.3Ais a back view of the display module as illustrated inFIG.1(i.e., a schematic plan view obtained through observing the display module from the back of the display module). As illustrated inFIG.3A, the display module further comprises a third flexible circuit board507, and the third flexible circuit board507and the fourth flexible circuit board505are bonded so as to be electrically connected with each other, so that the third flexible circuit board507can control a drive chip506through the fourth flexible circuit board505and control the display substrate501through the drive chip506to realize a display function. The third flexible circuit board507is also bonded and electrically connected with the first flexible circuit board504through the electrical connection region508, so that the third flexible circuit board507can control the touch sensor502through the first flexible circuit board504to realize a touch function. As illustrated inFIG.3A, the drive chip506is located on the side, away from the display substrate501, of the main body of the fourth flexible circuit board505. As illustrated inFIG.3A, the first flexible circuit board504is only located at one side of the drive chip506in the first direction D1, that is, the first flexible circuit board504is bonded and connected with the touch sensor502in a manner of disposing wires on a single side. For example, the first direction D1, the second direction D2and the third direction D3intersects with each other (e.g., are perpendicular to each other). It should be noted that the shapes, connections, and arrangements of the first flexible circuit board504, the fourth flexible circuit board505and the third flexible circuit board507as illustrated inFIG.1andFIG.3Aare only examples, and embodiments of the present disclosure are not limited thereto.FIG.3Ais a back view of another display module. For example, the shape, connection, and arrangement of the first flexible circuit board504, the fourth flexible circuit board505and the third flexible circuit board507inFIG.3Amay also adopt the example as illustrated inFIG.3B. In research, the inventors of the present disclosure have noted that the way that the first flexible circuit board504is bonded and connected with the touch sensor502by a manner of disposing wires on a single-side, illustrated inFIG.1is not suitable for a display module with a curved surface region (e.g., a curved screen), and the following is an exemplary description with reference toFIGS.4A-4C. FIG.4Ais a front view of another display module600. As illustrated inFIG.4A, the display module600comprises a flat region601, and curved surface regions602which are respectively located on both sides of the flat region601in the first direction D1, and a virtual dividing line (which can also be referred to as a bending start line603) is between the flat region601and a curved surface region602.FIG.4Bis a top view of the display module600as illustrated inFIG.4A. As illustrated inFIG.4B, the curved surface region602of the display module600is bent from the front of the display module600toward the back of the display module600. FIG.4Cis a back view of the display module600illustrated inFIG.4A. As illustrated inFIG.4C, the display module600comprises a display substrate (not illustrated in the figure), a touch sensor (not illustrated in the figure), a first flexible circuit board (i.e., a circuit board for the touch sensor, not illustrated in the figure), a fourth flexible circuit board606and a third flexible circuit board607. The touch sensor is arranged on the display side of the display substrate; the first flexible circuit board (i.e., the circuit board for the touch sensor) is bonded with the touch sensor to electrically connect with the touch sensor, and the third flexible circuit board607is bonded with the first flexible circuit board to electrically connect with the first flexible circuit board, so that the third flexible circuit board607can control the touch sensor through the first flexible circuit board to realize a touch function. The fourth flexible circuit board606is bonded with the display substrate of the display module600and thus electrically connected with the display substrate, so that the drive chip605included in the fourth flexible circuit board606can control the display substrate through the fourth flexible circuit board606to realize the display function. The third flexible circuit board607is bonded with the fourth flexible circuit board606and thus electrically connected with the fourth flexible circuit board606, so that the third flexible circuit board607can be electrically connected with the drive chip605through the fourth flexible circuit board606. As illustrated inFIG.4C, the third flexible circuit board607comprises a main body6071and a connection portion6072protruding from the main body6071. As illustrated inFIG.4C, the portion, which is at the back of the display substrate after the fourth flexible circuit board606is bended, of the fourth flexible circuit board606(the main body of the fourth flexible circuit board606), the drive chip605and the main body6071of the third flexible circuit board607are all arranged in the flat region601, this is because materials of the main body of the fourth flexible circuit board606, the drive chip605and the main body6071of the third flexible circuit board607are relatively hard. Arranging the main body of the fourth flexible circuit board606, the drive chip605and the main body6071of the third flexible circuit board607in the flat region601can avoid defects caused by bending the main body of the fourth flexible circuit board606, the drive chip605and the main body6071of the third flexible circuit board607. The inventors of the present disclosure have noted that, for the display module600with the curved surface region602(e.g., a curved screen), a layout space (the space for arranging wires of the first flexible circuit board) reserved for the first flexible circuit board (i.e., the circuit board for the touch sensor) of the display module600with the curved surface region602is small because of the following reasons. First, because the drive chip605is the core electronic component of the display module600, in order to avoid defects caused due to that the drive chip605is covered by hard materials, it is necessary to avoid that the drive chip605is covered by the first flexible circuit board. Secondly, a plurality of wires of the drive chip605bonded with the display substrate through the fourth flexible circuit board606respectively extend along the second direction D2and are arranged in parallel along the first direction D1; in order to avoid the potential electrical non-uniformity and brightness non-uniformity of the display substrate along the first direction D1caused by large differences in the lengths of the plurality of wires, the center of the drive chip605in the first direction D1overlaps with or is close to the center of the display substrate in the first direction Dl. Thirdly, because the display module600comprises the curved surface region602, the size of the flat region601in the first direction D1is relatively small. Therefore, in the case where the center of the drive chip605in the first direction D1overlaps with or is close to the center of the display substrate in the first direction D1, and the first flexible circuit board does not cover the drive chip605, the value of the distance between each end of the drive chip605in the first direction D1and a corresponding virtual boundary line (i.e., the size of the wiring region PWL available for the first flexible circuit board) is small. For example, in the case where the width of the curved surface region602in the first direction D1is large, if the first flexible circuit board is bonded and connected with the touch sensor by a manner of disposing wires on a single-side, the size of the wiring region PWL available for the first flexible circuit board in the first direction D1cannot meet the requirements of arranging wires of the first flexible circuit board (for example, the first flexible circuit board can only be bonded with part of the wires of the touch sensor). At least one embodiment of the present disclosure provides a display module and a display device. The display module comprises a first flexible circuit board, a display substrate, and a touch sensor disposed on the display side of the display substrate. The display substrate comprises a flat region and curved surface regions respectively on two sides of the flat region in a first direction; the touch sensor comprises a first bonding region and a second bonding region on a first side of a second direction intersecting with the first direction; the first bonding region and the second bonding region are on a surface, away from the display substrate, of the touch sensor, and the first bonding region and the second bonding region are stacked with the flat region and are spaced apart from each other; the first flexible circuit board is electrically connected with the touch sensor through the first bonding region and the second bonding region; the first flexible circuit board comprises a main body, and a first bonding connection portion and a second bonding connection portion which protrude from the main body and are spaced apart from each other; the first bonding connection portion is bonded with the first bonding region so as to be electrically connected with the first bonding region, and the second bonding connection portion is bonded with the second bonding region so as to be electrically connected with the second bonding region. For example, the display module can utilize the space on the back of the display module more effectively and realize the bonding of the touch sensor and the first flexible circuit board. Non-limitative descriptions are given to the display module provided by the embodiments of the present disclosure in the following with reference to a plurality of examples or embodiments. As described in the following, in case of no conflict, different features in these specific examples or embodiments can be combined so as to obtain new examples, and the new examples or embodiments are also fall within the scope of present disclosure. FIG.5is a front view of a display module100provided by at least one embodiment of the present disclosure. For example, the display module100may be an active matrix organic light emitting diode display screen. As illustrated inFIG.5, the display module100comprises a display substrate110(for example, an organic light emitting diode display panel) and a touch sensor120disposed on the display side of the display substrate110. As illustrated inFIG.5, the display module100further comprises a first flexible circuit board130(i.e., a circuit board for the touch sensor) and a fourth flexible circuit board150(e.g., chip on film). It should be noted that neither the first flexible circuit board130nor the fourth flexible circuit board150of the display module100as illustrated inFIG.5is in a bending state. For example, the top view of the display module100as illustrated inFIG.5may be similar to the top view of the display module as illustrated inFIG.4B, and will not be described again. For example, as illustrated inFIG.5, the second direction D2intersecting with the first direction D1has a first side191and a second side192. For example, the first side191and the second side192of the second direction D2are used to illustrate two sides in the second direction D2of the display module100and to illustrate two sides in the second direction D2of components of the display module100. For example, the first side191and the second side192of the second direction D2can be used to respectively represent the first side and the second side of the display module100in the second direction D2. For another example, the first side191and the second side192of the second direction D2can be used to respectively represent the first side and the second side of the display substrate110in the second direction D2. For another example, the first side191and the second side192of the second direction D2can be used to respectively represent the first side and the second side of the touch sensor120in the second direction D2. FIG.6Ais a front view of the display substrate110and a fourth flexible circuit board150of the display module100as illustrated inFIG.5. As illustrated inFIG.6A, the display substrate110comprises a flat region111, and curved surface regions112which are respectively located on two sides of the flat region111in the first direction D1, and a virtual boundary line113(may also be referred to as a bending start line113) is provided between the flat region111and a curved surface regions112. It should be noted that the flat region111, the curved surface region112and the bending start line113of the display substrate110respectively correspond to the flat region, the curved surface region, and the bending start line of the display module100. FIG.6Bis an example of the display substrate110as illustrated inFIG.6A. For example, as illustrated inFIG.6B, the display substrate110comprises a plurality of display pixel units115arranged in an array, and the plurality of display pixel units115are not only arranged in the flat region111, but also arranged in the curved surface regions112respectively on the two sides of the flat region111. It should be noted that, in other examples, the plurality of display pixel units115may be arranged only in the flat region111, and there is no display pixel unit in the curved surface region112. For example, as illustrated inFIG.6B, each of the plurality of display pixel units115comprises a pixel drive circuit116and a light emitting component117corresponding to the pixel drive circuit116. For example, the light emitting component117is an organic light emitting component; for example, the organic light emitting component is an organic light emitting diode. For example, the pixel drive circuit116may be implemented as a 2T1C pixel drive circuit, i.e., a circuit including two thin film transistors (i.e., a drive transistor and a switch transistor) and a storage capacitor, but embodiments of the present disclosure are not limited thereto. For another example, the pixel drive circuit116may be implemented as a pixel drive circuit including other suitable numbers of transistors and capacitors (e.g., a 3T1C circuit). For example, the display substrate110further comprises a plurality of gate lines GL and a plurality of data lines DL, the plurality of gate lines GL intersect the plurality of data lines DL to define the plurality of display pixel units115. For example, the data line DL is configured to connect the source electrode of the switch transistor or the drain electrode of the switch transistor, to provide a data signal for display to the switch transistor; the gate line GL is configured to connect the gate of the switch transistor, to provide a gate scanning signal to the switch transistor. As illustrated inFIG.6A, the display substrate110further comprises a third bonding region114located on the flat region111(for example, the third bonding region114is located on the first side191of the display module100). The fourth flexible circuit board150comprises a third bonding connection portion151, and the fourth flexible circuit board150is bonded with the display substrate110through the third bonding connection portion151and the third bonding region114, so as to allow the fourth flexible circuit board150to be electrically connected with the display substrate110. For example, as illustrated inFIG.6B, the plurality of data lines DL of the display substrate110extend into the third bonding region114(one end of each of the plurality of data lines DL is in the third bonding region114), so as to allow the plurality of data lines DL to be bonded with the third bonding connection portion151of the fourth flexible circuit board150. As illustrated inFIG.6A, the fourth flexible circuit board150further comprises a main body152connected with the third bonding connection portion151and a drive chip153disposed on the main body152of the fourth flexible circuit board150. The drive chip153is bonded with the display substrate110through the fourth flexible circuit board150and thus electrically connected to the display substrate110, so that the drive chip153included in the fourth flexible circuit board150can drive the display substrate110through the fourth flexible circuit board150. For example, the drive chip153comprises a data driver, a timing controller T-Con, etc. The data driver of the drive chip153may provide data signals for display to the plurality of data lines DL through the fourth flexible circuit board150. For example, the display module further comprises a gate driver on array (GOA) on the array substrate, and the plurality of output terminals of the GOA are respectively connected with the plurality of gate lines GL to provide gate scanning signals to the plurality of gate lines GL. It should be noted that the fourth flexible circuit board150as illustrated inFIG.6A(for example, the third bonding connection portion151of the fourth flexible circuit board150) is not in a bending state. However, in a final product including the display module100, the fourth flexible circuit board150(e.g., the third bonding connection portion151of the fourth flexible circuit board150) is in a bending state, and the main body152of the fourth flexible circuit board150is located on the side, away from the touch sensor120, of the display substrate110(i.e., is located on the back of the display substrate110after the fourth flexible circuit board150is bent); the drive chip153is located on the side, away from the touch sensor120, of the display substrate110(for example, the drive chip153is located on a side, away from the touch sensor120, of the main body152of the fourth flexible circuit board150). These contents are described in detail in the following example as illustrated inFIG.9, and are not repeated here. FIG.7Ais a front view of the touch sensor120and the first flexible circuit board130of the display module100as illustrated inFIG.5. It should be noted that, for convenience of description,FIG.7Aalso shows the bending start lines113of the display substrate110. It can be understood that the regions of the touch sensor120located on two sides of the bending start lines113are in a bending state in the final product of the display module100, that is, the regions of the touch sensor120respectively located on the two sides of the bending start lines113serve as curved surface regions of the touch sensor120in the final product of the display module100. As illustrated inFIG.5andFIG.7A, the touch sensor120has a first bonding region121and a second bonding region122on the first side of the second direction intersecting with the first direction. The first bonding region121and the second bonding region122are located on a surface of the touch sensor120on the side, away from the display substrate110, of the touch sensor120, the first bonding region121and the second bonding region122are stacked with the flat region111and are spaced apart from each other. For example, neither the first bonding region121nor the second bonding region122is stacked with the curved surface region112. For example, the orthographic projection of the first bonding region121and the second bonding region122on the display substrate110(for example, the orthographic projection on the layer where the flat region111of the display substrate110is located) is located in the flat region111. For example, as illustrated inFIG.5, the third bonding region114partially overlaps with an orthographic projection of the first bonding region121on the flat region111of the display substrate and an orthographic projection of the second bonding region122on the flat region111of the display substrate. For another example, the third bonding region114is located between the orthographic projection of the first bonding region121on the flat region111of the display substrate and the orthographic projection of the second bonding region122on the flat region111of the display substrate. It should be noted that the first side of the touch sensor120of the second direction intersecting with the first direction refers to the first side of the touch sensor120in the second direction. The first side of the touch sensor120in the second direction corresponds to the first side of the display module. For example, by allowing the touch sensor120to have the first bonding region121and the second bonding region122on the first side191of the second direction D2intersecting with the first direction D1, the first bonding region121and the second bonding region122are stacked with the flat region111and are spaced apart from each other, and the first flexible circuit board130is electrically connected with the touch sensor120through the first bonding region121and the second bonding region122, and thus the space on the back of the display module100can be effectively utilized, and the size of the wiring region available for the first flexible circuit board130(the overall width of the wiring region available for the first flexible circuit board130in the first direction D1) can be increased, so that the bonding and connection between the first flexible circuit board130and the touch sensor120can be realized in the case where the display module100comprises curved surface regions and the position of a drive chip153in the first direction D1is not changed. Therefore, potential electrical unevenness and brightness unevenness of the display substrate110along the first direction D1caused by changing the position of the drive chip153in the first direction D1can be avoided. FIG.7Bis an example of the touch sensor120as illustrated inFIG.7A. For example, as illustrated inFIG.7B, the touch sensor120is an add-on mode touch panel, the touch sensor120and the display substrate are separately manufactured and then the touch sensor120is attached onto the display side of the display substrate. For example, as illustrated inFIG.7B, the touch sensor120comprises a plurality of self-capacitance electrodes123arranged in an array and a plurality of wires124electrically connected with the plurality of self-capacitance electrodes123, that is, the touch sensor120is a self-capacitance touch sensor. For example, as illustrated inFIG.7B, the plurality of self-capacitance electrodes123are not only arranged in the flat region of the display module100, but also in the curved surface regions of the display module100, that is, orthographic projections of the plurality of self-capacitance electrodes123on the display substrate110are located not only in the flat region111, but also in the two curved surface regions112on the two sides of the flat region111. It should be noted that in other examples, the plurality of self-capacitance electrodes123may be only stacked with the flat region111but not stacked with the curved surface region112, that is, the orthographic projections of the plurality of self-capacitance electrodes123on the display substrate110are only located in the flat region111, and are not in the two curved surface regions112on the two sides of the flat region111. For example, as illustrated inFIG.7B, part of the plurality of wires124extend to the first bonding region121of the touch sensor120, and another part of the plurality of wires124extend to the second bonding region122of the touch sensor120. For example, as illustrated inFIG.7A, the first flexible circuit board130comprises a main body131, and a first bonding connection portion132and a second bonding connection portion133that protrude from the main body131of the first flexible circuit board130and are spaced apart from each other. The first bonding connection portion132is bonded with the first bonding region121(for example, wires124in the first bonding region121), so as to allow the first bonding connection portion132and the first bonding region121to be electrically connected with each other, and the second bonding connection portion133is bonded with the second bonding region122(for example, wires124in the second bonding region122), so as to allow the second bonding connection portion133and the second bonding region122to be electrically connected with each other. For example, the first flexible circuit board130further comprises a touch detection chip (not illustrated in the figure). For example, the touch detection chip is disposed on the main body131of the first flexible circuit board130. For example, the touch detection chip is configured to apply drive signals to the plurality of self-capacitance electrodes123through the first flexible circuit board130and the plurality of wires124, and is further configured to receive feedback signals provided by the plurality of self-capacitance electrodes123through the first flexible circuit board130and the plurality of wires124, and confirm whether or not a self-capacitance electrode123is touched and where the touched self-capacitance electrode123is located (i.e., touch position) based on the feedback signals. It should be noted that, for convenience of description, the first flexible circuit board130illustrated inFIG.7Ais not in a bending state. However, in the final product including the display module100, the first flexible circuit board130is in a bending state, the main body131of the first flexible circuit board130is located on the side, away from the touch sensor120, of the display substrate110(that is, on the back of the display substrate110after the first flexible circuit board130is bent), and the touch detection chip is located on the side, away from the touch sensor120, of the main body131of the first flexible circuit board130, this is described in detail in the example as illustrated inFIG.9. It should be noted that the touch sensor120is not limited to be implemented as a self-capacitance touch screen, and may also be implemented as a mutual capacitance touch screen. In this case, for example, the touch sensor120may comprise two layers of stripe-shape electrodes (each layer comprises a plurality of stripe-shape electrodes arranged in parallel), in which electrodes in different layers are in different planes and intersect with each other, and the above two layers of stripe-shape electrodes are respectively configured as touch drive electrodes of the touch sensor120and touch sensing electrodes of the touch sensor120. For example, the touch drive electrode and the touch sensing electrode may be made of transparent conductive oxide. The transparent conductive oxide, for example, may be an indium tin oxide (ITO). For example, the plurality of mutual capacitances arranged in the array are generated by coupling of the touch drive electrodes and the touch sensing electrodes which are in different planes and intersect with each other. When a finger touches the screen, the capacitance value of the mutual capacitance in the region corresponding to the finger changes. For example, the touch detection chip on the first flexible circuit board130may provide touch drive signals to the touch drive electrodes through the first flexible circuit board130and receive touch sensing signals provided by the touch sensing electrodes through the first flexible circuit board130. For example, the touch detection chip can determine the position of the point touched by the finger based on the change of the current corresponding to the values of the plurality of mutual capacitances, before and after the finger touches. FIG.8is a cross-sectional schematic diagram of the display module100as illustrated inFIG.5, and the cross-sectional schematic diagram as illustrated inFIG.8is taken along the BB′ line inFIG.5. It should be noted that, for convenience of description, neither the first flexible circuit board130nor the fourth flexible circuit board150of the display module100as illustrated inFIG.8is in a bending state. As illustrated inFIG.8, the touch sensor120and the display substrate110are stacked in the third direction D3, and the touch sensor120is located on the display side (i.e., the light emitting side or the image output side) of the display substrate110in the third direction D3. For example, the first direction D1, the second direction D2and the third direction D3intersect with each other (e.g., are perpendicular to each other). FIG.9is another schematic cross-sectional view of the display module100as illustrated inFIG.5. Compared with the schematic cross-sectional view as illustrated inFIG.8, in the schematic cross-sectional view as illustrated inFIG.9, both the first flexible circuit board130and the fourth flexible circuit board150are in a bending state. As illustrated inFIG.9, part of the fourth flexible circuit board150(the main body152of the fourth flexible circuit board150) and part of the first flexible circuit board130(the main body131of the first flexible circuit board130, part of the first bonding connection portion132of the first flexible circuit board130and part of the second bonding connection portion133of the first flexible circuit board130) are provided at the back of the display substrate110(i.e., the side, away from the touch sensor120, of the display substrate110) through bending the fourth flexible circuit board150and the first flexible circuit board130. FIG.10is a back view of the display module100as illustrated inFIG.5(i.e., a schematic plan view obtained through observing the display module100from the back of the display module100). For example, the display module100further comprises a third flexible circuit board (that is, the main circuit board of the display module100). For convenience of description, the third flexible circuit board160is also illustrated in the back view of the display module100as illustrated inFIG.10. For example, as illustrated inFIG.10, the third flexible circuit board160is located on the side, away from the touch sensor120, of the display substrate110; the third flexible circuit board160and the fourth flexible circuit board150(for example, the main body152of the fourth flexible circuit board150) are bonded and electrically connected to each other; for example, the third flexible circuit board160may control the drive chip153through the fourth flexible circuit board150(e.g., the main body152of the fourth flexible circuit board150), and control the display substrate110through the drive chip153to realize the display function. For example, as illustrated inFIG.10, the first flexible circuit board130and the third flexible circuit board160are bonded with each other, so as to allow the first flexible circuit board130and the third flexible circuit board160to be electrically connected to each other; for example, the third flexible circuit board160can control the touch detection chip through the first flexible circuit board130, and control the touch sensor120through the touch detection chip to realize the touch function. For example, as illustrated inFIG.10, the first flexible circuit board130at least partially overlap with the third flexible circuit board160in a direction perpendicular to the flat region111of the display substrate110. For example, as illustrated inFIG.10, the first flexible circuit board130further comprises an electrical connection region134protruding from the main body131, and the electrical connection region134of the first flexible circuit board130is located on the side of the main body131away from the first bonding connection portion132and the second bonding connection portion133. The electrical connection region134of the first flexible circuit board130and the third flexible circuit board160are at least partially overlapped with each other in the direction perpendicular to the flat region111of the display substrate110(i.e., the third direction), so that the first flexible circuit board130can be bonded with the third flexible circuit board160through the electrical connection region134, so as to allow the first flexible circuit board130and the third flexible circuit board160to be electrically connected with each other. For example, as illustrated inFIG.10, the third flexible circuit board160comprises a main body161, a connection portion162protruding from the main body161of the third flexible circuit board160, and a connection terminal163connected with the connection portion162of the third flexible circuit board160. For example, the electrical connection region134of the first flexible circuit board130at least partially overlaps with the main body161of the third flexible circuit board160in the direction perpendicular to the flat region111of the display substrate110. For example, the connection terminal163of the third flexible circuit board160is configured to be connected to a main board (not shown in the figure) of the display device to receive image signals provided by the main board and the like. For example, as illustrated inFIG.10, the main body131of the first flexible circuit board130, the main body152of the fourth flexible circuit board150, the drive chip153, and the main body161of the third flexible circuit board160are all disposed in the flat region of the display module100. This is because the materials of the main body131of the first flexible circuit board130, the main body152of the fourth flexible circuit board150, the drive chip153and the main body161of the third flexible circuit board160are hard. Disposing the main body131of the first flexible circuit board130, the main body152of the fourth flexible circuit board150, the drive chip153and the main body161of the third flexible circuit board160in the flat region can avoid defects caused by bending the main body131of the first flexible circuit board130, the main body152of the fourth flexible circuit board150, the drive chip153and the main body161of the third flexible circuit board160. For example, as illustrated inFIG.10, an orthographic projection of the drive chip153on the display substrate110is in a region surrounded by an orthographic projection of the first bonding connection portion132of the first flexible circuit board130on the display substrate110, an orthographic projection of the second bonding connection portion133of the first flexible circuit board130on the display substrate110and an orthographic projection of the main body131of the first flexible circuit board130on the display substrate110, and the orthographic projection of the drive chip153on the display substrate110is spaced apart from the orthographic projection of the first bonding connection portion132of the first flexible circuit board130on the display substrate110, the orthographic projection of the second bonding connection portion133of the first flexible circuit board130on the display substrate110and the orthographic projection of the main body131of the first flexible circuit board130on the display substrate110, such that defects caused by that the drive chip153is covered by the first flexible circuit board130can be avoided. For example, as illustrated inFIG.10, the first bonding connection portion132and the second bonding connection portion133are respectively on two sides of the drive chip153in the first direction D1. For example, as illustrated inFIG.10, the first bonding connection portion132, the second bonding connection portion133, and the main body131of the first flexible circuit board130form an opening, and the opening exposes the drive chip153, thereby avoiding defects caused by that the drive chip153is covered by the first flexible circuit board130. For example, as illustrated inFIG.10, the main body131of the first flexible circuit board130is located on a side, away from the display substrate110, of the third flexible circuit board160(e.g., the main body161of the third flexible circuit board160). For example, as illustrated inFIG.10, the main body161of the third flexible circuit board160, the main body152of the fourth flexible circuit board150and the main body of the first flexible circuit board130are sequentially disposed on the side, away from the touch sensor120, of the display substrate110, and the main body161of the third flexible circuit board160is closer to the display substrate110than the main body of the first flexible circuit board130. It should be noted that the positional relationship of the main body161of the third flexible circuit board160, the main body152of the fourth flexible circuit board150and the main body of the first flexible circuit board130in the direction perpendicular to the flat region111of the display substrate110is not limited to the example as illustrated inFIG.10. In an example, the main body152of the fourth flexible circuit board150, the main body131of the first flexible circuit board130and the main body161of the third flexible circuit board160are sequentially disposed on the side, away from the touch sensor120, of the display substrate110, and the main body152of the fourth flexible circuit board150is closer to the display substrate110than the main body161of the third flexible circuit board160. In another example, the main body152of the fourth flexible circuit board150, the main body161of the third flexible circuit board160and the main body131of the first flexible circuit board130are sequentially disposed on the side, away from the touch sensor120, of the display substrate110, and the main body152of the fourth flexible circuit board150is closer to the display substrate110than the main body131of the first flexible circuit board130. It should be noted that the shapes, connections, and arrangements of the first flexible circuit board130, the fourth flexible circuit board150and the third flexible circuit board160as illustrated inFIG.5andFIG.10are only examples, and embodiments of the present disclosure are not limited thereto.FIG.11is a front view of the touch sensor120and the first flexible circuit board130of another display module100provided by at least one embodiment of the present disclosure, andFIG.12is a back view of the display module100as illustrated inFIG.11. For example, the shapes, connections and arrangements of the first flexible circuit board130, the fourth flexible circuit board150(the main body152and the drive chip153of the fourth flexible circuit board150) and the third flexible circuit board160may adopt the example as illustrated inFIG.11andFIG.12. Referring toFIG.8andFIG.9again, for example, the display module100further comprises a bonding support structure141; the bonding support structure141overlaps with the first bonding connection portion132and the second bonding connection portion133in the direction perpendicular to the flat region111of the display substrate110, and the bonding support structure141is located at the side of the portion, which is in contact with the touch sensor120, of the first bonding connection portion132of the first flexible circuit board130away from the touch sensor120. For example, by providing the bonding support structure141, it is possible to prevent the end of the first bonding connection portion132(i.e., the portion, which is in contact with the touch sensor120, of the first bonding connection portion132) and the end of the second bonding connection portion133(i.e., the portion, which is in contact with the touch sensor120, of the second bonding connection portion133) from tilting up when the first flexible circuit board130is bent, such that invalid bonding caused by that the end of the first bonding connection portion132and the end of the second bonding connection portion133are tilting up can be prevented, and the robustness and the reliability of the bonding and connection between the touch sensor120and the first flexible circuit board130can be improved. For example, the material of the bonding support structure141can be determined according to actual application requirements, which is not specifically limited by the embodiments of the present disclosure. For example, the bonding support structure141may be a foam layer or a polyethylene terephthalate layer, and in this case, the bonding support structure141can not only improve the robustness and the reliability of the bonding and connection between the touch sensor120and the first flexible circuit board130, but also prevent the end of the first bonding connection portion132and the end of the second bonding connection portion133from reflecting light, thereby avoiding the deterioration of the display effect of the display module100. For example, the bonding support structure141may comprise a first bonding support structure and a second bonding support structure that are spaced apart from each other in the first direction, and the first bonding support structure and the second bonding support structure are respectively stacked with the end of the first bonding connection portion132and the end of the second bonding connection portion133. For another example, the bonding support structure141may be not only stacked with the end of the first bonding connection portion132and the end of the second bonding connection portion133, but also be stacked with the gap between the end of the first bonding connection portion132and the end of the second bonding connection portion133. For example, as illustrated inFIG.8andFIG.9, the display module100further comprises a cover plate142. The cover plate142is located on the display side of the display substrate110and on the side, away from the display substrate110, of the touch sensor120. For example, the cover plate142is configured to protect related films of the display module100from being scratched. For example, the cover plate142may be a transparent substrate. For example, the transparent substrate may be a glass substrate, a quartz substrate, a plastic substrate (such as a polyethylene terephthalate (PET) substrate), or a substrate made of other suitable materials. For example, the portion, located in the curved surface region, of the cover plate142of the display module100has a certain bending curvature, so that the portions, located in the curved surface region of the display module100, of the display substrate110and of the touch sensor120can be bent along the bending curvature of the cover plate142. For example, as illustrated inFIG.8andFIG.9, the bonding support structure141is sandwiched between the first flexible circuit board130and the cover plate142; in this case, the cover plate142not only has the function of protecting the related films of the display module100from being scratched, but also applies downward force to the end of the first bonding connection portion132and the end of the second bonding connection portion133through the bonding support structure141, thereby further improving the robustness and reliability of the bonding and connection between the touch sensor120and the first flexible circuit board130. For example, as illustrated inFIG.8andFIG.9, the bonding support structure141is in direct contact with both the first flexible circuit board130and the cover plate142. For example, the display module100further comprises a polarizer143. For example, the polarizer143is a circular polarizer. For example, the polarizer143is located between the touch sensor120and the cover plate142. For example, the polarizer143(e.g., a circular polarizer) can alleviate the problems of poor contrast and poor display quality caused by reflected light (which is caused by the reflection of ambient light by the display substrate). For example, the display module100further comprises adhesive layers144which are disposed between the polarizer143and the cover plate142and between the touch sensor120and the display substrate110. The adhesive layer144may be, for example, optical adhesive. For example, the optical adhesive144may be an optically clear adhesive (OCA). For example, the sum of the thicknesses of the bonding support structure141and the thicknesses of the first bonding connection portion132in the direction perpendicular to the flat region111of the display substrate110is substantially equal to the value of the distance between the touch sensor120and the cover plate142in the direction perpendicular to the flat region111of the display substrate110. In this case, the bonding support structure141can be in direct contact with both the first flexible circuit board130and the cover plate142, so that the cover plate142can apply downward forces to the end of the first bonding connection portion132and the end of the second bonding connection portion133through the bonding support structure141, so as to further improve the robustness and reliability of the bonding and connection between the touch sensor120and the first flexible circuit board130. For example, the sum of the thicknesses of the bonding support structure141and the thicknesses of the first bonding connection portion132in the direction perpendicular to the flat region111of the display substrate110is substantially equal to the sum of the thicknesses of the polarizer143and the thicknesses of the adhesive layer144(the adhesive layer144between the cover plate142and the polarizer143) in the direction perpendicular to the flat region111of the display substrate110. FIG.13is a front view of another display module200provided by at least one embodiment of the present disclosure. For example, the display module200may be an active matrix organic light emitting diode display screen. As illustrated inFIG.13, the display module200comprises a display substrate210(for example, an organic light emitting diode display panel) and a touch sensor220disposed on the display side of the display substrate210. As illustrated inFIG.13, the display module200further comprises a first flexible circuit board230(i.e., a circuit board of the touch sensor220). It should be noted that, inFIG.13, the first flexible circuit board230of the display module200is not in a bending state, and the fold portion of the display substrate210is not in a fold state. FIG.14Ais a front view of the display substrate210and the drive chip250of the display module200as illustrated inFIG.13. As illustrated inFIG.14A, the second direction D2has a first side291and a second side292. For example, the first side291and the second side292of the second direction D2are used to illustrate two sides in the second direction D2of the display module200and illustrate two sides in the second direction D2of the components of the display module200. For example, the first side291of the second direction D2and the second side292of the second direction D2are used to respectively represent the first side of the touch sensor220and the second side of the touch sensor220in the second direction D2. For another example, the first side291of the second direction D2and the second side292of the second direction D2may be used to respectively represent the first side of the substrate main body211in the second direction D2and the second side of the substrate main body211in the second direction D2. As illustrated inFIG.14A, the display substrate210comprises a substrate body211, and a fold portion212protruding from the substrate body211at a first side291(the first side of the substrate body211). For example, the display substrate210further comprises a bent portion (not labeled in the figure) arranged between the substrate body211of the display substrate210and the fold portion212of the display substrate210, and opposite sides of the bent portion are respectively connected with the substrate body211and the fold portion212of the display substrate210. For example, in the final product of the display module200, the bent portion of the display substrate210is bent, and the fold portion212of the display substrate210is provided at the side, away from the touch sensor220, of the substrate main body211through bending, that is, in the final product of the display module200, the display substrate210is in a fold state. For example, the bent portion of the display substrate210is configured to allow the substrate main body211and the fold portion212to be parallel to each other and to be stacked with each other in the direction perpendicular to the substrate main body211. For example, both the fold portion212and the bent portion of the display substrate210are located in the peripheral region of the display substrate210, and the display region of the display substrate210is located in the substrate body211of the display substrate210. For example, by providing the bent portion and the fold portion212, the area of the peripheral region in the plane where the substrate main body211is located can be reduced, which is beneficial to the narrow frame design of the display module200. As illustrated inFIG.14A, the substrate body211comprises a flat region213and a curved surface region214, and a virtual boundary line (can also be referred to as a bending start line215) is between the flat region213and the curved surface region214. It should be noted that the flat region213, the curved surface region214and the bending start line215of the display substrate210respectively correspond to the flat region, the curved surface region, and the bending start line of the display module200. For example, as illustrated inFIG.14AandFIG.17, the display module200further comprises a drive chip250located on the side, away from the touch sensor220, of the display substrate210. For example, the drive chip250comprises a data driver, a gate driver, a timing controller T-Con, and the like. As illustrated inFIG.14A, the drive chip250is located on a side, away from the touch sensor220(the side away from the substrate main body211), of the fold portion212, and the drive chip250is directly bonded (for example, directly formed) on the fold portion212, such that the drive chip250is electrically connected with the display substrate210. For example, by directly bonding (e.g., directly forming and directly integrating) the drive chip250on the fold portion212, the electrical connection between the drive chip250and the display substrate210can be realized without a flexible circuit board, and thus the structure of the display module200is simplified. FIG.14Bis an example of the display substrate210and the drive chip250as illustrated inFIG.14A. For example, as illustrated inFIG.6B, the display substrate210comprises a plurality of gate lines GL and a plurality of data lines DL, the plurality of gate lines GL intersect with the plurality of data lines DL to define a plurality of display pixel units216arranged in an array; each of the plurality of display pixel units216comprises a pixel drive circuit217and a light emitting component218connected with the pixel drive circuit217. For example, as illustrated inFIG.6B, the plurality of data lines DL of the display substrate210are directly bonded with the drive chip250, so as to allow the plurality of data lines DL and the drive chip250to be electrically connected with each other, and the data driver of the drive chip250can provide data signals for display to the pixel drive circuit217through the data lines DL, and the gate driver of the drive chip250can provide gate scanning signals for display to the pixel drive circuit217through the gate lines GL, so that the drive chip250can drive the display substrate210to realize a display function. For example, the drive chip250is directly formed on the fold portion212, and the drive chip250is electrically connected with the plurality of data lines DL extending into the fold portion212. For example, the drive chip250may also be electrically connected with the plurality of gate lines GL. For example, other descriptions of the display pixel units216, the gate lines GL, the data lines DL and the drive chip250as illustrated inFIG.14Bmay be referred to the example as illustrated inFIG.6B, and are not be repeated here. FIG.14Cis a front view of the touch sensor220and the first flexible circuit board230of the display module200as illustrated inFIG.13. It should be noted that, for convenience of description,FIG.14Calso shows a bending start line215of the display substrate210; It can be understood that the portion, which is located on two sides of the bending start lines215, of the touch sensor220are in a bending state in the final product of the display module200. It should be noted that the first flexible circuit board230as illustrated inFIG.14Cis not in a bending state. As illustrated inFIG.13andFIG.14C, the touch sensor220has a first bonding region221and a second bonding region222on the first side291of the second direction D2. The first bonding region221and the second bonding region222are stacked with the flat region213and are spaced apart from each other in the first direction D1, that is, an orthographic projection of the first bonding region221on the display substrate210and an orthographic projection of the second bonding region222on the display substrate210are only in the flat region213. For example, neither the first bonding region221nor the second bonding region222overlaps with the curved surface region214. For example, by making the touch sensor220have the first bonding region221and the second bonding region222at the first side291of the second direction D2intersecting with the first direction D1, the first bonding region221and the second bonding region222are on a surface of the touch sensor220on a side, away from the display substrate210, of the touch sensor220, the first bonding region221and the second bonding region222are stacked with the flat region213and are spaced apart from each other, and the first flexible circuit board230is electrically connected with the touch sensor220through the first bonding region221and the second bonding region222, so that the space on the back of the display module200is effectively utilized, and the size of the wiring region available for the first flexible circuit board230(the overall width of the wiring region available for the first flexible circuit board230in the first direction D1) is increased, and the bonding and connection between the first flexible circuit board230and the touch sensor220can be realized in the case where the display module200comprises curved surface regions and the position of the drive chip250in the first direction D1is not changed, and so that the potential electrical unevenness and brightness unevenness of the display substrate210along the first direction D1caused by changing the position of the drive chip250in the first direction D1can be avoided. For example, as illustrated inFIG.14C, the first flexible circuit board230comprises a main body231, and a first bonding connection portion232and a second bonding connection portion233that are protruded from the main body231of the first flexible circuit board230and are spaced apart from each other. The first bonding connection portion232is bonded with the first bonding region221(e.g., wires in the first bonding region221), so as to allow the first bonding connection portion232and the first bonding region221to be electrically connected with the first bonding region221, and the second bonding connection portion233is bonded with the second bonding region222(e.g., wires in the second bonding region222), so as to allow the second bonding connection portion233and the second bonding region222to be electrically connected with each other. For example, the specific implementation of the touch sensor220and the first flexible circuit board230as illustrated inFIG.14Cmay be referred to the examples as illustrated inFIG.7AandFIG.7B, and are not be described in detail here. FIG.15is a schematic cross-sectional view of the display module200as illustrated inFIG.13, and the schematic cross-sectional view as illustrated inFIG.15is taken along the line CC′ inFIG.13. InFIG.6, the first flexible circuit board230of the display module200and the bent portion of the display substrate210are not in a bending state. As illustrated inFIG.8, the touch sensor220is stacked with the display substrate210in the third direction D3, and the touch sensor220is on the display side (i.e., the light emitting side or the image output side) of the display substrate210in the third direction D3. For example, the first direction D1, the second direction D2and the third direction D3intersects with each other (e.g., perpendicular to each other). FIG.16is another schematic cross-sectional view of the display module200as illustrated inFIG.13. Compared with the schematic cross-sectional view illustrated inFIG.15, in the schematic cross-sectional view illustrated inFIG.16, both the first flexible circuit board230and the bent portion of the display substrate210are in a bending state. As illustrated inFIG.16, the fold portion212of the display substrate210and a portion of the first flexible circuit board230(the main body231, part of the first bonding connection portion232and part of the second bonding connection portion233of the first flexible circuit board230) are all provided at the back of the display substrate210(that is, the side, away from the touch sensor220, of the display substrate210) through bending. As illustrated inFIG.15andFIG.16, the display module200further comprises a bonding support structure241, a cover plate242, a polarizer243and an adhesive layer244. For example, specific implementations of the bonding support structure241, the cover plate242, the polarizer243and the optical adhesive244may be referred to the bonding support structure141, the cover plate142, the polarizer143and the adhesive layer144as illustrated inFIG.8andFIG.9, and are not described in detail here. FIG.17is a back view of the display module200as illustrated inFIG.13. For example, the display module200further comprises a third flexible circuit board260(that is, the main circuit board of the display module200); for convenience of description, the third flexible circuit board260is also illustrated in the back view inFIG.17. As illustrated inFIG.17, the third flexible circuit board260is on a side, away from the touch sensor220, of the substrate body211of the display substrate210. The first flexible circuit board230and the third flexible circuit board260are bonded with each other, so as to be electrically connected to each other by. For example, as illustrated inFIG.17, the first flexible circuit board230at least partially overlaps with the third flexible circuit board260in a direction perpendicular to the flat region213of the display substrate210. For example, as illustrated inFIG.17, the first flexible circuit board230further comprises an electrical connection region234protruding from the main body231of the first flexible circuit board230, and the electrical connection region234of the first flexible circuit board230is on a side, away from the first bonding connection portion232and the second bonding connection portion233, of the main body231. The electrical connection region234of the first flexible circuit board230at least partially overlaps with the third flexible circuit board260in the direction perpendicular to the flat region213of the display substrate210, so that the first flexible circuit board230is bonded with the third flexible circuit board260through the electrical connection region234, so as to allow the first flexible circuit board230and the third flexible circuit board260to be electrically connected with the third flexible circuit board260. For example, the first flexible circuit board230further comprises a touch detection chip, and the third flexible circuit board260can control the touch detection chip through the first flexible circuit board230and thus control the touch sensor220through the touch detection chip to realize the touch function. For example, the third flexible circuit board260is further bonded with the drive chip250, so as to allow the third flexible circuit board260and the drive chip250to be electrically connected with each other, so that the third flexible circuit board260can control the display substrate210to realize the display function through the drive chip250. For example, as illustrated inFIG.17, the third flexible circuit board260includes a main body261, a connection portion262protruding from the main body261of the third flexible circuit board260, and a connection terminal263connected with the connection portion262of the third flexible circuit board260. For example, the connection terminal263of the third flexible circuit board260is configured to be connected with the main board to receive an image signal provided by the main board and the like. For example, as illustrated inFIG.7, the main body231of the first flexible circuit board230, the substrate main body211, the drive chip250, and the main body261of the third flexible circuit board260are all disposed in the flat region of the display module200. For example, as illustrated inFIG.17, an orthographic projection of the drive chip250on the flat region213of the display substrate210is in a region surrounded by an orthographic projection of the first bonding connection portion232of the first flexible circuit board230on the flat region213of the display substrate210, an orthographic projection of the second bonding connection portion233of the first flexible circuit board230on the flat region213of the display substrate210and an orthographic projection of the main body231of the first flexible circuit board230on the flat region213of the display substrate210, and the orthographic projection of the drive chip250on the flat region213of the display substrate210is spaced apart from all of the orthographic projection of the first bonding connection portion232of the first flexible circuit board230on the flat region213of the display substrate210, the orthographic projection of the second bonding connection portion233of the first flexible circuit board230on the flat region213of the display substrate210and the orthographic projection of the main body231of the first flexible circuit board230on the flat region213of the display substrate210, thereby avoiding defects caused by that the drive chip250is covered by the first flexible circuit board230. For example, as illustrated inFIG.17, the first bonding connection portion232, the second bonding connection portion233, and the main body231of the first flexible circuit board230form an opening, and the opening exposes the drive chip250, thereby avoiding defects caused by that the drive chip250is covered by the first flexible circuit board230. For example, as illustrated inFIG.17, the main body261of the third flexible circuit board260, the fold portion212of the display substrate210and the main body231of the first flexible circuit board230are sequentially disposed on the side, away from the touch sensor220, of the substrate main body211of the display substrate210, and the main body261of the third flexible circuit board260is closer to the substrate main body211of the display substrate210than the main body231of the first flexible circuit board230. It should be noted that the positional relationship of the main body261of the third flexible circuit board260, the fold portion212of the display substrate210and the main body231of the first flexible circuit board230in the direction perpendicular to the flat region231of the display substrate210is not limited to the example as illustrated inFIG.17. In an example, the fold portion212of the display substrate210, the main body231of the first flexible circuit board230and the main body261of the third flexible circuit board260are sequentially disposed on the side, away from the touch sensor220, of the substrate main body211of the display substrate210, and the fold portion212of the display substrate210is closer to the substrate main body211of the display substrate210than the main body261of the third flexible circuit board260. In another example, the fold portion212of the display substrate210, the main body261of the third flexible circuit board260and the main body231of the first flexible circuit board230are sequentially disposed on the side, away from the touch sensor220, of the substrate main body211of the display substrate210, and the fold portion212of the display substrate210is closer to the substrate main body211of the display substrate210than the main body231of the first flexible circuit board230. It should be noted that the drive chip250of the display module200as illustrated inFIG.17is not limited to being directly bonded on the substrate main body211, and in some examples, the drive chip250may also be bonded on the substrate main body211through a flexible circuit board. The following is an exemplary description with reference toFIG.18A,FIG.18BandFIG.19. FIG.18Ais a front view of the display substrate210and a second flexible circuit board270of still another display module200provided by at least one embodiment of the present disclosure. The display module200as illustrated inFIG.18Ais similar to the display module200as illustrated inFIG.13, so only the differences between them are described here, and the similarities are not be described again. As illustrated inFIG.18A, the display module200further includes a second flexible circuit board270, the second flexible circuit board270includes a drive chip250; the second flexible circuit board270and the display substrate210are bonded and electrically connected with each other, thereby realizing the bonding and connection between the drive chip250and the display substrate210.FIG.18Bis an example of the display substrate210and the second flexible circuit board270as illustrated inFIG.18A. As illustrated inFIG.18B, the second flexible circuit board270is bonded with the data lines DL of the display substrate210, and thereby the drive chip250is electrically connected to the data lines DL of the display substrate210through the second flexible circuit board270. FIG.19is a back view of the display module200as illustrated inFIG.18A. As illustrated inFIG.19, the second flexible circuit board270is on a side, away from the substrate main body211, of the fold portion212and is bonded with the fold portion212, and the drive chip250is on a side, away from the fold portion212, of the second flexible circuit board270. As illustrated inFIG.19, the display module200further includes a third flexible circuit board260located on a side, away from the touch sensor220, of the substrate main body211of the display substrate210. The third flexible circuit board260includes a main body261, and the main body261of the third flexible circuit board260is bonded and electrically connected with the second flexible circuit board270. Therefore, the third flexible circuit board260can drive the display substrate210through the drive chip250. For example, as illustrated inFIG.19, an orthographic projection of the drive chip250on the flat region213of the display substrate210is in a region surrounded by an orthographic projection of the first bonding connection portion232of the first flexible circuit board230on the flat region213of the display substrate210, an orthographic projection of the second bonding connection portion233of the first flexible circuit board230on the flat region213of the display substrate210and an orthographic projection of the main body231of the first flexible circuit board230on the flat region213of the display substrate210, and the orthographic projection of the drive chip250on the flat region213of the display substrate210is spaced apart from all of the orthographic projection of the first bonding connection portion232of the first flexible circuit board230on the flat region213of the display substrate210, the orthographic projection of the second bonding connection portion233of the first flexible circuit board230on the flat region213of the display substrate210and the orthographic projection of the main body231of the first flexible circuit board230on the flat region213of the display substrate210, thereby avoiding defects caused by that the drive chip250is covered by the first flexible circuit board230. For example, as illustrated inFIG.19, the main body261of the third flexible circuit board260, the fold portion212of the display substrate210, the second flexible circuit board270, and the main body231of the first flexible circuit board230are sequentially disposed on the side, away from the touch sensor220, of the substrate main body211of the display substrate210, and the main body261of the third flexible circuit board260is closer to the substrate main body of the display substrate210than the main body231of the first flexible circuit board230. It should be noted that the positional relationship of the main body261of the third flexible circuit board260, the fold portion212of the display substrate210, the second flexible circuit board270and the main body231of the first flexible circuit board230in the direction perpendicular to the flat region231of the display substrate210is not limited to the example as illustrated inFIG.19. In an example, the fold portion212of the display substrate210, the second flexible circuit board270, the main body231of the first flexible circuit board230and the main body261of the third flexible circuit board260are sequentially disposed on the side, away from the touch sensor220, of the substrate main body211of the display substrate210, and the fold portion212of the display substrate210is closer to the substrate main body211of the display substrate210than the main body261of the third flexible circuit board260. In another example, the fold portion212of the display substrate210, the second flexible circuit board270, the main body261of the third flexible circuit board260and the main body231of the first flexible circuit board230are sequentially disposed on the side, away from the touch sensor220, of the substrate main body211of the display substrate210, and the fold portion212of the display substrate210is closer to the substrate main body211of the display substrate210than the main body231of the first flexible circuit board230. At least one embodiment of the present disclosure further provides a display device.FIG.20is an exemplary block diagram of a display device provided by at least one embodiment of the present disclosure. As illustrated inFIG.20, the display device includes any one of the display modules provided by at least one embodiment of the present disclosure. It should be noted that other components of the display module and the display device (for example, image data encoding/decoding device, clock circuit, etc.) may adopt suitable components, this should be understood by those skilled in the art, no further descriptions will be given here and it should not be construed as a limitation on the embodiments of the present disclosure. Although detailed description has been given above to the present disclosure with general description and embodiments, it shall be apparent to those skilled in the art that some modifications or improvements may be made on the basis of the embodiments of the present disclosure. Therefore, all the modifications or improvements made without departing from the spirit of the present disclosure shall all fall within the scope of protection of the present disclosure. What are described above is related to the illustrative embodiments of the disclosure only and not limitative to the scope of the disclosure; the scopes of the disclosure are defined by the accompanying claims. | 76,585 |
11943990 | DETAILED DESCRIPTION OF THE EMBODIMENTS In the present disclosure, it will be understood that when an element or layer is referred to as being “on”, “connected to” or “coupled to” another element or layer, it can be directly on, connected or coupled to the other element or layer or intervening elements or layers may be present. Like numerals may refer to like elements throughout the specification. In the drawings, the thickness, ratio, and dimension of components may be exaggerated for clarity. It will be understood that the term “and/or” includes any and all combinations of one or more of the associated listed items. It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, components, regions, layers and/or periods, these elements, components, regions, layers and/or periods should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or period from another region, layer or period. Thus, a first element, component, region, layer or period discussed below could be termed a second element, component, region, layer or period without departing from the scope of the present inventive concept. As used herein, the singular forms, “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. In addition, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, in the example, terms “below” and “beneath” may encompass both an orientation of above, below and beneath. The device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may be interpreted accordingly. Hereinafter, embodiments of the present inventive concept will be described more fully with reference to the accompanying drawings. FIG.1is a perspective view showing a display device DD according to an embodiment of the present inventive concept.FIG.2is an exploded perspective view showing the display device DD according to an embodiment of the present inventive concept.FIG.3is a cross-sectional view showing the display device taken along a line I-I′ shown inFIG.2. Referring toFIGS.1to3, the display device DD may be a device activated in response to electrical signals. The display device DD may be included in various electronic devices. For example, the display device DD may be applied to electronic devices, such as a smart watch, a tablet computer, a notebook computer, a computer, a smart television, or the like. The display device DD may display an image IM toward a third direction DR3through a display surface IS that is substantially parallel to each of a first direction DR1and a second direction DR2. The display surface IS through which the image IM is displayed may correspond to a front surface of the display device DD. The image IM may include a video and/or a still image. In the present embodiment, front (or, e.g., upper) and rear (or, e.g., lower) surfaces of each member of the display device DD are defined with respect to a direction in which the image IM is displayed. The front and rear surfaces are opposite to each other in the third direction DR3, and a normal line direction of each of the front and rear surfaces may be substantially parallel to the third direction DR3. A separation distance in the third direction DR3between the front surface and the rear surface may correspond to a thickness in the third direction DR3of the display device DD. In addition, the first, second, and third directions DR1, DR2, and DR3are relative to each other and may be changed in other directions. The display device DD may sense an external input applied thereto from the outside. For example, the external input includes various forms of inputs provided from the outside of the display device DD, For example, the external inputs may include a proximity input (e.g., hovering) applied when a user's body (e.g., a finger) or a device (e.g., a stylus) comes within a predetermined distance of the display device DD. An additional example of an external input includes a touch input by a user's body (e.g., a user's hand). In addition, the external inputs may be provided in the form of force, pressure, temperature, light, etc.; however, the present inventive concept is not limited thereto. The front surface of the display device DD may include a transmission area TA and a bezel area BZA. The transmission area TA may be an area through which the image IM is displayed. The user may view the image IM through the transmission area TA. In the present embodiment, the transmission area TA may have a quadrangular shape with rounded vertices, however, this is merely an example. The transmission area TA may have a variety of shapes and should not be particularly limited. The bezel area BZA may be adjacent to the transmission area TA. The bezel area BZA may have a predetermined color. The bezel area BZA may surround the transmission area TA. Accordingly, the transmission area TA may have a shape defined by the bezel area BZA; however, this is merely an example, and the bezel area BZA may be disposed adjacent to only one side of the transmission area TA or may be omitted. The display device DD according to the embodiment of the present inventive concept may include various embodiments and should not be particularly limited. As shown inFIGS.2and3, the display device DD may include a display module DM, a window WM, and an adhesive film AF. The display module DM may include a display panel DP and an input sensor ISP. The display panel DP according to the embodiment of the present inventive concept may be a light-emitting type display panel; however, the present inventive concept is not limited thereto. For instance, the display panel DP may be an organic light emitting display panel or a quantum dot light emitting display panel. A light emitting layer of the organic light emitting display panel may include an organic light emitting material. A light emitting layer of the quantum dot light emitting display panel may include a quantum dot or a quantum rod. Hereinafter, the organic light emitting display panel will be described as a representative example of the display panel DP. Referring toFIG.3, the input sensor ISP may be disposed on the display panel DP. For example, the input sensor ISP may be disposed directly on the display panel DP. According to the embodiment of the present inventive concept, the input sensor ISP may be formed on the display panel DP through successive processes. For example, in the case where the input sensor ISP is disposed directly on the display panel DP, an inner adhesive film may not be disposed between the input sensor ISP and the display panel DP. However, according to an embodiment of the present inventive concept, the inner adhesive film may be disposed between the input sensor ISP and the display panel DP. In this case, the input sensor ISP is not manufactured together with the display panel DP through the successive processes. For example, the input sensor ISP may be fixed to an upper surface of the display panel DP by the inner adhesive film after being manufactured through a separate process from the display panel DP. The display panel DP may generate the image, and the input sensor ISP may obtain coordinate information of the external input, e.g., a touch event. The window WM may include a transparent material that transmits the image. For example, the window WM may include a glass, sapphire, or plastic material. The window WM may have a single-layer structure; however, the present inventive concept is not limited thereto, and the window WM may include a plurality of layers. In addition, the bezel area BZA of the display device DD may have a printing a material having a predetermined color on an area of the window WM. As an example, the window WM may include a light blocking pattern WBM to provide the bezel area BZA, The light blocking pattern WBM may be a colored organic layer and may be formed by a coating method. The display module DM may be coupled to the window WM by the adhesive film AR As an example, the adhesive film AF may include an optically clear adhesive film (OCA). However, the adhesive film AF should not be limited thereto or thereby, and the adhesive film AF may include a different adhesive. For example, the adhesive film AF may include an optically clear resin (OCR) or a pressure sensitive adhesive film (PSA). The display device DD may further include an anti-reflective unit. The anti-reflective unit may be disposed on the input sensor ISP. The anti-reflective unit may reduce a reflectance of an external light incident thereto from the above of the window WM. The anti-reflective unit according to the embodiment of the present inventive concept may include a retarder and/or a polarizer. The retarder may be a film type or liquid crystal coating type and may include a λ/2 retarder and/or a λ/4 retarder. For example, the polarizer may be a film type or liquid crystal coating type. For example, the film type polarizer may include a stretching type synthetic resin film, and the liquid crystal coating type polarizer may include liquid crystals aligned in a predetermined alignment. The retarder and the polarizer may be implemented as one polarizing film. The anti-reflective unit may further include a protective film disposed above or under the polarizing film. The display module DM may display the image in response to electrical signals and may transmit/receive information based on the external input. The display module DM may include an active area AA and a peripheral area NAA. The active area AA may be an area through which the image provided from the display module DM transmits. The peripheral area NAA may be adjacent to the active area AA. For example, the peripheral area NAA may at least partially surround the active area AA. However, this is merely an example, and the peripheral area NAA may be provided in various shapes and should not be particularly limited. According to an embodiment of the present inventive concept, the active area AA of the display module DM may correspond to at least a portion of the transmission area TA. The display module DM may include a main circuit board MCB, a flexible circuit film FCB, and a driving chip DIC. The main circuit board MCB may be connected to the flexible circuit film FCB and may be electrically connected to the display panel DP. The main circuit board MCB may include a plurality of driving elements. The driving elements may include a circuit to drive the display panel DP. The flexible circuit film FCB may be connected to the display panel DP and may electrically connect the display panel DP to the main circuit board MCB. The driving chip DIC may be mounted on the flexible circuit film FCB. The driving chip DIC may include driving elements, for example, a data driving circuit, to drive a pixel of the display panel DP. According to the embodiment of the present inventive concept, the display module DM includes one flexible circuit film FCB; however, the present inventive concept is not limited thereto or thereby. The flexible circuit film FCB may be provided in plural, and the flexible circuit films FCB may be connected to the display panel DP. FIG.2shows a structure in which the driving chip DIC is mounted on the flexible circuit film FCB; however, the present inventive concept is not limited thereto or thereby. For example, the driving chip DIC may be disposed on the display parcel DP. As an additional example, the driving Chip DIC may be disposed directly on the display panel DP. In this case, a portion of the display panel DP on which the driving chip DIC is mounted may be bent to be disposed on a rear surface of the display module DM. The input sensor ISP may be electrically connected to the main circuit board MCB through the flexible circuit film FCB; however, the embodiment of the present inventive concept is not limited thereto. For example, the display module DM may further include a separate flexible circuit film to electrically connect the input sensor ISP to the main circuit board MCB. The display device DD may further include a sensor controller to control driving of the input sensor ISP. For example, the sensor controller may be built in the main circuit board MCB. However, as another example, the sensor controller may be built in the driving chip DIC. As an additional example, the sensor controller may be a circuit separate from the main circuit board MCB and the driving chip DIC. The display device DD may further include an external case EDC accommodating the display module DM. The external case EDC may be coupled to the window WM and may provide an appearance of the display device DD. The external case EDC may absorb impacts applied thereto from the outside and may prevent foreign substance and moisture from entering the display module DM to protect components accommodated in the external case EDC. In addition, as an example, the external case EDC may be provided in a form in which a plurality of storage members is combined with each other. The display device DD according to the embodiment of the present inventive concept may further include an electronic module or circuit including various functional modules or circuits to operate the display module DM, a power supply module or circuit supplying a power for an overall operation of the display device DD, and a bracket coupled to the display module DM and/or the external case EDC to divide an inner space of the display device DD. FIG.4is a plan view showing the display panel DP according to an embodiment of the present inventive concept. Referring toFIG.4, the display panel DP may include a driving circuit GDC, a plurality of signal lines SGL, and a plurality of pixels PX. The display panel DP may include a pad part PLD disposed in the peripheral area NAA. The pad part PLD may include pixel pads D-PD each being connected to a corresponding signal line among the signal lines SGL. The pixels PX may be arranged in the active area AA. Each of the pixels PX may include an organic light emitting diode and a pixel driving circuit connected to the organic light emitting diode. The driving circuit GDC, the signal lines SGL, the pad part PLD, and the pixel driving circuit may be included in a circuit dement layer DP-CL shown inFIG.7A. The driving circuit GDC may include a gate driving circuit. For example, the gate driving circuit may generate a plurality of gate signals and may sequentially output the gate signals to a plurality of gate lines GL described later. The gate driving circuit may further output other control signals to the pixel driving circuit. The signal lines SGL may include the gate lines GL, data lines DL, a power line PL, and a control signal line CSL. Each of the gate lines GL may be connected to a corresponding pixel among the pixels PX, and each of the data lines DL may be connected to a corresponding pixel among the pixels PX, The power line PL may be connected to the pixels PX. The control signal line CSL may provide control signals to the driving circuit GDC. The signal lines SGL may overlap the active area AA and the peripheral area NAA. The pad part PLD may be connected to the flexible circuit film PCB (refer toFIG.2) and may include the pixel pads D-PD and input pads I-PD. The pixel pads D-PD may connect the flexible circuit film FCB to the display panel DP, and the input pads I-PD may connect the flexible circuit film PCB to the input sensor ISP (refer toFIG.2). The pixel pads D-PD and the input pads I-PD may be provided by exposing a portion of lines disposed on the circuit element layer DP-CL without being covered by an insulating layer included in the circuit element layer DP-CL. The pixel pads D-PD may be connected to corresponding pixels PX via the signal lines SGL. In addition, the driving circuit GDC may be connected to one pixel pad among the pixel pads D-PD. FIG.5is a plan view showing the input sensor ISP according to an embodiment of the present inventive concept. Referring toFIG.5, the input sensor ISP may include a plurality of sensing electrodes IF and a plurality of trace lines SL. The sensing electrodes IE have their own coordinate information. The sensing electrodes IE may be arranged in the first and second directions DR1and DR2. For instance, the sensing electrodes IE may be arranged in a matrix form and may each be connected to a trace line SL. The input sensor ISP may include the input pads I-PD, each of Which may be connected to an end of a corresponding trace line SL of the plurality of trace lines SL and may be arranged in the peripheral area NAA. The input sensor ISP according to the present embodiment may obtain coordinate information by, for example, a self-capacitance method. The sensing electrodes IE may be respectively connected to the input pads I-PD by the trace lines SL. Each of the sensing electrodes IE may be connected to the sensor controller via the input pads I-PD. The capacitance of each of the sensing electrodes IE may be changed by the external input, for example, the touch event. In the present embodiment, the sensitivity of input sensor ISP may be determined depending on a variation in capacitance. For example, as the variation in capacitance by the external input increases, the sensitivity of the input sensor ISP may be increased. The shape and the arrangement of the sensing electrodes IE should not be limited. As an example, each of the sensing electrodes IE may have a polygonal shape, and the sensing electrodes IE each having a quadrangular shape are shown as a representative example. As an example, each of the sensing electrodes IE may include touch electrodes. The shape and the arrangement of the sensing electrodes IE may be changed depending on an arrangement of the touch electrodes according to an arrangement of the pixels PX (refer toFIG.4) described later. The sensing electrodes IE and the trace lines SL may be disposed in the active area AA. For example, a portion of each of the trace lines SL may be disposed in the active area AA, and the other portion of each of the trace lines SL may be disposed in the peripheral area NAA. FIG.6is a cross-sectional view showing the display panel DP according to an embodiment of the present inventive concept. Referring toFIG.6, the display panel DP may include a plurality of intermediate insulating layers, semiconductor patterns, conductive patterns, and signal lines. The intermediate insulating layers, the semiconductor patterns, and the conductive patterns may be formed by a coating or depositing process. For example, the intermediate insulating layers, the semiconductor patterns, and the conductive patterns may be selectively patterned by a photolithography process. In this way, the semiconductor patterns, the conductive patterns, and the signal lines included in the circuit element layer DP-CL and a light emitting element layer DP-OLED may be formed. The circuit element layer DP-CL may include a base layer BL, a buffer layer BFL, a first intermediate insulating layer IL1, a second intermediate insulating layer IL2, a third intermediate insulating layer IL3, and a fourth intermediate insulating layer IL4. The base layer BL may include a synthetic resin film. For example, the synthetic resin film may include a heat-curable resin. The base layer BL may have a multi-layer structure. For instance, the base layer BL may have a three-layer structure of a synthetic resin layer, an adhesive layer, and a synthetic resin layer. For example, the synthetic resin layer may be a polyimide-based resin layer; however, the material for the synthetic resin layer may not be limited. The synthetic resin layer may include, for example, at least one of an acrylic-based resin, a methacrylic-based resin, a polyisoprene-based resin, a vinyl-based resin, an epoxy-based resin, a urethane-based resin, a cellulose-based resin, a siloxane-based resin, a polyamide-based resin, and/or a perylene-based resin. The base layer BL may include, for example, a glass substrate, a metal substrate, or an organic/inorganic composite substrate. At least one inorganic layer may be formed on an upper surface of the base layer BL. For example, the inorganic layer may include at least one of aluminum oxide, titanium oxide, silicon oxide, silicon oxynitride, zirconium oxide, and/or hafnium oxide. The inorganic layer may be formed in multiple layers. The inorganic layers may form a barrier layer and/or a buffer layer. In the present embodiment, the display panel DP may include a buffer layer BFL. The buffer layer BFL may increase an adhesion between the base layer BL and the semiconductor pattern. The buffer layer BFL may include, for example, a silicon oxide layer and a silicon nitride layer, and the silicon oxide layer and the silicon nitride layer may be alternately stacked with each other. The semiconductor pattern may be disposed on the buffer layer BFL. The semiconductor pattern may include polysilicon; however, the present inventive concept is not limited thereto or thereby. For example, the semiconductor pattern may include amorphous silicon or metal oxide. FIG.6shows only a portion of the semiconductor pattern, and the semiconductor pattern may be disposed in other areas of the pixel in a plane. The semiconductor pattern may be arranged over the pixels PX. The semiconductor pattern may have different electrical properties depending on whether it is doped or not and whether it is doped with an N-type dopant or a P-type dopant. The semiconductor pattern may include a first region and a second region. The first region may have a relatively high conductance, and the second region may have a relatively low conductance. For example, the first region may be doped with the N-type dopant or the P-type dopant. A P-type transistor may include a doped region doped with the P-type dopant. For example, the second region may be a non-doped region or may be doped at a concentration lower than that of the first region. The first region may have a conductivity greater than that of the second region and may substantially serve as an electrode or signal line. The second region may substantially correspond to an active (or, e.g., a Channel) region of a transistor. For example, a portion of the semiconductor pattern may be the active region of the transistor. Another portion of the semiconductor pattern may be a source or a drain region of the transistor, and the other portion of the semiconductor pattern may be a connection electrode or a connection signal line. As shown inFIG.6, a first source region SE1, a first active region CHA1, and a first drain region. DE1of a first transistor TR1may be formed from the semiconductor pattern, and a second source region SE2, a second active region CHA2, and a second drain region DE2of a second transistor TR2may be formed from the semiconductor pattern. The first source region SE1and the first drain region DE1may extend in opposite directions to each other from the first active region CHA1, and the second source region SE2and the second drain region DE2may extend in opposite directions to each other from the second active region CHA2. For example, the first active region CHA1may be disposed between the first source region SE1and the first drain region DE1, and the second active region CHA2may be disposed between the second source region SE2and the second drain region DE2. The first intermediate insulating layer IL1may be disposed on the buffer layer BFL. For example, the first intermediate insulating layer IL1may commonly overlap the pixels PX and may cover the semiconductor pattern; however, the present inventive concept is not limited thereto, and for example, the first intermediate insulating layer IL1may be divided into separate portions. The first intermediate insulating layer IL1may be an inorganic layer and/or an organic layer and may have a single-layer or multi-layer structure. The first intermediate insulating layer HA may include at least one of aluminum oxide, titanium oxide, silicon oxide, oxynitride, zirconium oxide, and/or hafnium oxide. In the present embodiment, the first intermediate insulating layer IL1may have, for example, a single-layer structure of a silicon oxide layer. Not only the first intermediate insulating layer IL1, but also an intermediate insulating layer of the circuit element layer DP-CL described later may be an inorganic layer and or an organic layer and may have a single-layer or multi-layer structure. The inorganic layer may include at least one of the above-mentioned materials. First and second gates GE1and GE2may be disposed on the first intermediate insulating layer IL1. The first gate GE1may correspond to a portion of metal pattern. The first and second gates GE1and GE2may overlap the first and second active regions CHA1and CHA2, respectively. The first and second gates GE1and GE2may be used as a mask in a process of doping the semiconductor pattern. The second intermediate insulating layer IL2may be disposed on the first intermediate insulating layer IL1and may cover the first and second gates GE1and GE2. The second intermediate insulating layer IL2may commonly overlap the pixels PX; however, the present inventive concept is not limited thereto, and for example, the second intermediate insulating layer IL2may be divided into separate portions. The second intermediate insulating layer IL2may be an inorganic layer and/or an organic layer and may have a single-layer or multi-layer structure. In the present embodiment, the second intermediate insulating layer IL2may, for example, have a single-layer structure of silicon oxide layer. A first connection electrode SD1may be disposed on the second intermediate insulating layer IL2. The first connection electrode SD1may be connected to the second drain DE2via a first contact hole CNT-1provided through the first intermediate insulating layer IL1and the second intermediate insulating layer IL2. The third intermediate insulating layer IL3may be disposed on the second intermediate insulating layer IL2. The third intermediate insulating layer IL3may be an organic layer. A second connection electrode SD2may be disposed on the third intermediate insulating layer IL3. The second connection electrode SD2may be connected to the first connection electrode SD1through a second contact hole CNT-2provided through the third intermediate insulating layer IL3. The fourth intermediate insulating layer IL4may be disposed on the third intermediate insulating layer IL3and may cover the second connection electrode SD2. For example, the fourth intermediate insulating layer IL4may be an organic layer. The light emitting element layer DP-OLED may be disposed on the circuit element layer DP-CL. As an example, the light emitting element layer DP-OLED may include a light emitting element OLED and a pixel definition layer PDL. The light emitting element OLED may include a first electrode AE, a light emitting layer EL, and a second electrode CE. The first electrode AE may be disposed on the circuit element layer DP-CL. The light emitting layer EL may be disposed on the first electrode AE, and the second electrode CE may be disposed on the light emitting layer EL. The first electrode AE may be disposed on the fourth intermediate insulating layer IL4. The first electrode AE may be connected to the second connection electrode SD2through a third contact hole CNT-3provided through the fourth intermediate insulating layer IL4. An opening OP2(hereinafter, referred to as a pixel opening) may be provided through the pixel definition layer PDL. At least a portion of the first electrode AE may be exposed through the pixel opening OP2of the pixel definition layer PDL. As shown inFIG.6, the display panel DP may include a light emitting area PXA and a non-light-emitting area NPXA around the light emitting area PXA. The non-light-emitting area NPXA may at least partially surround the light emitting area PXA. In the present embodiment, the light emitting area PXA may correspond to the portion of the first electrode AE exposed through the pixel opening OP2. The light emitting layer EL may be disposed on the first electrode AE. The light emitting layer EL may be disposed in an area corresponding to the pixel opening OP2. For example, the light emitting layer EL may be formed in each of the pixels PX (refer toFIG.4) after being divided into plural portions. The second electrode CE may be disposed on the light emitting layer EL. The second electrode CE may have an integral shape and may be commonly disposed over the pixels PX. An encapsulation layer TFE may be disposed on the second electrode CE. The encapsulation layer TFE may be commonly disposed over the pixels PX. In the present embodiment, the encapsulation layer TEE may cover the second electrode CE. For example, the encapsulation layer TFE may be disposed directly on the second electrode CE. However, the present inventive concept is not limited thereto. In an embodiment of the present inventive concept, a capping layer may be disposed between the encapsulation layer TFE and the second electrode CE to cover the second electrode CE. In this case, the encapsulation layer TFE may cover the capping layer and may be directly disposed on the second electrode CE. As an example, the light emitting element OLED may further include a hole control layer and an electron control layer. The hole control layer may be disposed between the first electrode AE and the light emitting layer EL and may further include a hole injection layer. The electron control layer may be disposed between the light emitting layer EL and the second electrode CE and may further include an electron injection layer. The hole control layer and the electron control layer may be commonly formed in the pixels PX using an open mask. FIGS.7A to7Care enlarged plan views showing a portion of an input sensor corresponding to an area AA′ ofFIG.5. Referring toFIG.7A, each of the sensing electrodes IE may include a plurality of first touch electrodes SIE1and a plurality of second touch electrodes SIE2. The first touch electrodes SIE1overlaps the non-light-emitting area NPXA. The second touch electrodes SIE2overlaps the light emitting area PXA and the non-light-emitting area. NPXA and are electrically connected to the first touch electrodes SIE1. Each of the first and second touch electrodes SIE1and SIE2may include a metal material or transparent conductive material. The metal material may include, for example, silver, aluminum, copper, chromium, nickel, titanium, or the like, which may be processed at a low temperature; however, the present inventive concept is not limited thereto or thereby. The transparent conductive material may include a transparent conductive oxide, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium zinc tin oxide (ITZO), or the like, in addition, the transparent conductive material may include a conductive polymer such as PEDOT, a metal nanowire, a graphene, or the like. In the case where the first and second touch electrodes SIE1and SIE2include the metal material that may be processed at the low temperature, the light emitting element OLED may be prevented from being damaged even though the input sensor ISP is formed through successive process. The light emitting element OLED (refer toFIG.6) may include a first light emitting element OLED1(refer toFIG.8B) emitting a first light in a first wavelength band, a second light emitting element OLED2(refer toFIG.8B) emitting a second light in a second wavelength band different from the first wavelength band, and a third light emitting element OLED3(refer toFIG.8B) emitting a third light in a third wavelength band different from the first and second wavelength bands. As an example, the first light may be a red light, the second light may be a green light, and the third light may be a blue light. The light emitting area PXA may be divided into plural areas according to the light emitting element OLED disposed therein. The light emitting area PXA in which the first light emitting element OLED1is disposed may be referred to as a first light emitting area PXA1. The light emitting area PXA in which the second light emitting element OLED2is disposed may be referred to as a second light emitting area PXA2, and the light emitting area PXA in which the third light emitting element OLED3is disposed may be referred to as a third light emitting area PXA3. Sizes of the first to third light emitting areas PXA1to PXA3may vary depending on a color of the lights generated by the first to third light emitting elements OLED1to OLED3. The sizes of the first to third light emitting areas PXA1to PXA3may be determined depending on the type of the light emitting layer EL included in the light emitting element OLED. As an example, when the first, second, and third lights are respectively the red, green, and blue lights, the size of the third light emitting area PXA3may be greater than the size of the first and second light emitting areas PXA1and PXA2, and the size of the first light emitting area. PXA1may be greater than the size of the second light emitting area PXA2. This is because an organic material emitting the red light has the best efficiency and an organic material emitting the blue light has the worst efficiency. In the present embodiment, the first to third light emitting areas PXA1to PXA3having different sizes are shown as a representative example; however, the present inventive concept is not limited thereto or thereby. For example, the first to third light emitting areas PXA1to PXA3may have the same size as each other. The first touch electrodes SIE1may extend in the first direction DR1, may be arranged in the second direction DR2, and may be disposed in the non-light-emitting area NPXA that surrounds the first to third light emitting areas PXA1to PXA3. Each of the first touch electrodes S1E1may include a first sub-touch electrode SIE1_aand a second sub-touch electrode SIE1_b, which extend in the first direction DR1, and are arranged in the second direction DR2. In addition, the first touch electrodes SIE1may at least partially surround the light emitting areas PXA1to PXA3. An opening OP1(hereinafter, referred to as an electrode opening) may be provided between the first and second sub-touch electrodes SIE1_aand SIE1_bto at least partially expose the light emitting area PXA. A size of the electrode opening OP1may vary depending on the first to third light emitting areas PXA1to PXA3surrounded by the first and second sub-touch electrodes SIE1_aand SIE1_b. As an example, when the first and second sub-touch electrodes SIE1_aand SIE1_bsurround the first light emitting area PXA1, the electrode opening OP1may be a first electrode opening OP1_a, When the first and second sub-touch electrodes SIE1_aand SIE1_bsurround the second light emitting area PXA2, the electrode opening OP1may be a second electrode opening OP1_b. When the first and second sub-touch electrodes SIE1_aand SIE1_bsurround the third light emitting area PXA3, the electrode opening OP1may be a third electrode opening OP1_c. In this case, for example, a size of the third electrode opening OP1_cmay be greater than a size of the first and second electrode openings OP1_aand OP1_b, and the size of the first electrode opening OP1_amay be greater than the size of the second electrode opening OP1_b. In the present embodiment, the first to third electrode openings OP1_ato OP1_chaving different sizes from each other are shown as a representative example; however, the present inventive concept is not limited thereto or thereby. For example, the first to third electrode openings OP1_ato OP1_cmay have the same size as each other. The second touch electrodes SIE2may extend in the first direction DR1and may be arranged in the second direction DR2. Each of the second touch electrodes SIE2may overlap the light emitting area PXA and the non-light-emitting area NPXA. As an example, the first to third light emitting areas PXA1to PXA3are sequentially arranged in the first direction DR1in the display panel DP (refer toFIG.4), and the same type of light emitting areas may be arranged in the same row along the second direction DR2. For example, the first light emitting area PXA1may be arranged in a first row, and the second light emitting area PXA2may be arranged in a second row. As an additional example, the third light emitting area PXA3may be arranged in a third row. When compared with an example in which each of the sensing electrodes IE includes only the first touch electrodes SIE1overlapping the non-light-emitting area NPXA, the number and the area of the first and second touch electrodes SIE1and SIE2included in one sensing electrode IE may increase in the case where each of the sensing electrodes IE includes the first touch electrodes SIE1and the second touch electrodes SIE2overlapping the light emitting area PXA. Accordingly, the sensitivity of the input sensor ISP may be increased. As an example, compared to a display device with a small screen such as a smart phone, a display device with a large screen, such as a television, has a large gap between pixels even though they have the same display resolution, Therefore, a gap between the first touch electrodes SIE1may increase, the number of the first touch electrodes SIE1included in the one sensing electrode IE may decrease, and as a result, the sensitivity of the input sensor ISP may be lowered. In this case, when each of the sensing electrodes IE further includes the second touch electrodes SIE2, the sensitivity of the input sensor ISP may be increased. However, in the case where the second touch electrodes SIE2include the metal material, the lights generated from the first to third light emitting areas PXA1to PXA3may be reflected by the second touch electrodes SIE2and may not travel to the outside. In this case, since the first to third light emitting areas PXA1to PXA3have different sizes from each other and when the second touch electrodes SIE2are disposed to overlap the first to third light emitting areas PXA1to PXA3with the same width, the amounts of the lights that do not travel to the outside may be different depending on the colors of the emitted lights, thereby affecting the user's visibility. According to the present inventive concept, the width of the second touch electrodes SIE2may vary depending on the light emitting area overlapping therewith. As an example, each of the second touch electrodes SIE2may include a first portion LP1aoverlapping the first light emitting area PXA1, a second portion LP2aoverlapping the second light emitting area. PXA2, and a third portion LP3aoverlapping the third light emitting area PXA3. At least one portion of the first to third portions LP1ato LP3amay have a width greater than the remaining portions. As an example, when the first, second, and third lights are the red, green, and blue lights, respectively, the size of the third light emitting area PXA3corresponding to a blue light may be greater than the size of each of the first light emitting area PXA1corresponding to a red light and the second light emitting area PXA2corresponding to a green light, and the size of the first light emitting area PXA1may be greater than the size of the second light emitting area PXA2. In this case, the third portion LP3amay have a width WD3agreater than each of a width WD1aof the first portion LP1aand a width WD2aof the second portion LP2a, and the width WD1aof the first portion LP1amay be greater than the width WD2aof the second portion LP2a. A rate of the light that does not travel to the outside due to the second touch electrodes SIE2may be the same for each color by varying the width of each of the second touch electrodes SIE2depending on the size of the overlapping light emitting area. Accordingly, although the second touch electrodes SIE2are disposed to overlap the light emitting area PXA, it may not affect the users' visibility. Referring toFIG.7B, each of second touch electrodes SIE2may include a first sensing portion SP1and a second sensing portion SP2. The first sensing portion SP1may overlap at least one light emitting area among first to third light emitting areas PXA1to PXA3, and the second sensing portion SP2may be connected to the first sensing portion SP1and may overlap a non-light-emitting area NPXA. Hereinafter, detailed descriptions of the same elements as those ofFIG.7Awill be omitted. As an example,FIG.7Bshows a structure in Which each of the second touch electrodes SIE2includes the first sensing portion SP1that overlaps the first and third light emitting areas PXA1and PXA3and the second sensing portion SP2that overlaps the non-light-emitting area NPXA and does not overlap the second light emitting area PXA2. The first sensing portion SP1may include a first sub-sensing portion SP1_aand a second sub-sensing portion SP2. The first sensing portion SP1may overlap the first light emitting area PXA1, and the second sub-sensing portion SP1_bmay overlap the third light emitting area PXA3. In the embodiment of the present inventive concept, a size of the second light emitting area PXA2is the smallest, and thus, the effect on the user's visibility is the greatest when the second touch electrodes SIE2overlap the second light emitting area PXA2. Accordingly, the second touch electrodes SIE2may be disposed not to overlap the second light emitting area PXA2. However, the present inventive concept is not limited thereto or thereby. Each of the second touch electrodes SIE2may not overlap the first light emitting area PXA1. In addition, the first sensing portion SP1may have a width that varies depending on the light emitting areas overlapping therewith. The second sensing portion SP2may be disposed in the non-light-emitting area. NPXA and may be spaced apart from each of the first touch electrodes SIE1. Referring toFIG.7C, as an example, first to third light emitting areas PXA1to PXA3may be sequentially arranged in the second direction DR2in the display panel DP, and the same type of the light emitting areas may be arranged in the same column along the first direction DR1. Hereinafter, detailed descriptions of the same elements as those ofFIG.7Awill be omitted. Each of second touch electrodes SIE2may include a third sub-touch electrode SIE2_a, a fourth sub-touch electrode SIE2_b, and a fifth sub-touch electrode SIE2_c, which extend in the first direction DR1. The third sub-touch electrode SIE2_amay overlap the first light emitting area PXA1. The fourth sub-touch electrode SIE2_bmay overlap the second light emitting area PXA2, and the fifth sub-touch electrode SIE2_cmay overlap the third light emitting area PXA3. The third sub-touch electrode SIE2_amay include a plurality of first portions LP1b, and the fourth sub-touch electrode SIE2_bmay include a plurality of second portions LP2b. The fifth sub-touch electrode SIE2_cmay include a plurality of third portions LP3b. However, the first to third light emitting areas PXA1to PXA3may be arranged in the display panel DP of the present inventive concept in various ways without being limited to the embodiments shown inFIGS.7A to7C. As an example, the first to third light emitting areas may be arranged in the same arrangement manner as light emitting areas as shown inFIGS.9,10A, and10B. FIG.8Ais a cross-sectional view taken along a line II-II′ shown inFIG.7Ato show the display module DM, andFIG.8Bis a cross-sectional view taken along a line shown inFIG.7Cto show a display module. Referring toFIG.8A, the display module DM may include the display panel DP and the input sensor ISP disposed on the display panel DP, For example, the input sensor ISP may be disposed directly on the display panel DP. Hereinafter, detailed descriptions of the same elements as those described with reference toFIG.6will be omitted. The input sensor ISP may be formed on the display panel DP through successive processes. The input sensor ISP may include a first sensing insulating layer IIL1, a conductive layer ICL, and a second sensing insulating layer IIL2. The first sensing insulating layer IIL1may be an inorganic layer including one of silicon nitride, silicon oxynitride, and/or silicon oxide. As another way, the first sensing insulating layer IIL1may include an organic layer including an epoxy-based resin, an acrylic-based resin, or an imide-based resin. The first sensing insulating layer IIL1may have a single-layer structure or a multi-layer structure of layers stacked in the third direction DR3. The conductive layer ICL may be disposed on the first sensing insulating layer IIL1. As an example, the conductive layer ICL may include sensing electrodes IL. The conductive layer ICL, may be covered by the second sensing insulating layer IIL2. The conductive layer ICL, may have a single-layer structure or a multi-layer structure of layers stacked in the third direction DR3. The conductive layer ICL having the single-layer structure may include a metal layer or a transparent conductive layer. The metal layer may include molybdenum, silver, titanium, copper, aluminum, or alloys thereof. The transparent conductive layer may include a transparent conductive oxide, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium zinc tin oxide (ITZO), or the like. In addition, the transparent conductive layer may include a conductive polymer such as PEDOT, a metal nanowire, a graphene, or the like. The conductive layer ICL having the multi-layer structure may include metal layers. The metal layers may have a three-layer structure of titanium/aluminum/titanium. The conductive layer ICL having the multi-layer structure may include at least one metal layer and at least one transparent conductive layer. The second sensing insulating layer IIL2may include an inorganic layer. The inorganic layer may include at least one of aluminum oxide, titanium oxide, silicon oxide, silicon oxynitride, zirconium oxide, and/or hafnium oxide. The second sensing insulating layer IIL2may include an organic layer. The organic layer may include at least one of an acrylic-based resin, a methacrylic-based resin, a polyisoprene-based resin, a vinyl-based resin, an epoxy-based resin, a urethane-based resin, a cellulose-based resin, a siloxane-based resin, a polyimide-based resin, a polyamide-based resin, and/or a perylene-based resin. The electrode opening OP1may have a width in the second direction DR2that is substantially equal to the distance between the first sub-touch electrode SIE1_aand the second sub-touch electrode SIE1_b. Referring toFIG.8B, the pixel opening OP2may include a first pixel opening OP2_a, a second pixel opening OP2_b, and a third pixel opening OP2_c. In the first pixel opening OP2_a, at least a portion of a first electrode AE1of the first light emitting element OLED1is exposed. In the second pixel opening OP2_b, at least a portion of a first electrode AE2of the second light emitting element OLED2is exposed. In the third pixel opening OP2_cat least a portion of a first electrode AE3of the third light emitting element OLED3is exposed. Hereinafter, detailed descriptions of the same elements as those described with reference toFIG.6will be omitted. The first to third pixel openings OP2_ato OP2_cmay have different sizes from each other. As an example, when first, second, and third lights are respectively red, green, and blue lights, a size of the third pixel opening OP2_cis greater than each of a size of the first pixel opening OP2_aand a size of the second pixel opening OP2_b, and the size of the first pixel opening OP2_amay be greater than the size of the second pixel opening OP2_b, The first to third light emitting areas PXA1to PXA3, which correspond to the portions of the first electrodes AE1to AE3exposed through the first to third pixel opening OP2_ato OP2_c, may have different sizes from each other. As an example, when first, second, and third lights are respectively red, green, and blue lights, a size of the third light emitting area PXA3corresponding to the blue light may be greater than each of a size of the first light emitting area PXA1corresponding to the red light and a size of the second light emitting area PXA2corresponding to the green light, and the size of the first light emitting area PXA1may be greater than the size of the second light emitting area PXA2. The third, fourth, and fifth sub-touch electrodes SIE2_aand SIE2_cmay have different widths from each other. For example, the third sub-touch electrode SIE2_amay overlap the first light emitting area PXA1. As an additional example, the fourth sub-touch electrode SIE2_bmay overlap the second light emitting area PXA2, and the fifth sub-touch electrode SIE2_cmay overlap the third light emitting area PXA3. A width WD3bof the fifth sub-touch electrode SIE2_cmay be greater than each of a width WD1bof the third sub-touch electrode SIE2_aand a width WD2bof the fourth sub-touch electrode SIE2_b. The width WD1bof the third sub-touch electrode SIE2_amay be greater than the width WD2bof the fourth sub-touch electrode SIE2_b. As an example, the width WD1bof the third sub-touch electrode SIE2_amay be a width WD1bof each of the first portions LP1b(refer to7C) included in the third sub-touch electrode SIE2_a. The width WD2bof the fourth sub-touch electrode SIE2_bmay be a width WD2bof each of the second portions LP2b(refer to7C) included in the fourth sub-touch electrode SIE2_b, and the width WD3bof the fifth sub-touch electrode SIE2_cmay be a width WD3bof each of the third portions LP3b(refer to7C) included in the fifth sub-touch electrode SIE2_c. FIGS.9A to10Bare enlarged plan views showing a portion of an input sensor corresponding to an area AA′ ofFIG.5. Referring toFIG.9A, first and third light emitting areas PXA1and PXA3may be sequentially arranged in the first direction DR1and the second direction DR2in the display panel DP (refer toFIG.4), and second light emitting area PXA2may be arranged to be spaced apart from the first and third light emitting areas PXA1and PXA3in a fourth direction DR4crossing the first direction DR1and second direction DR2. Hereinafter, detailed descriptions of the same elements as those described with reference toFIGS.7A to7Cwill be omitted. Each of second touch electrodes SIE2may include a third sub-touch electrode SIE2_aand a fourth sub-touch electrode SIE2_b. The third sub-touch electrode SIE2_amay overlap the first and third light emitting areas PXA1and PXA3and a non-light-emitting area NPXA. The fourth sub-touch electrode SIE2_bmay overlap the second light emitting area PXA2and the non-light-emitting area NPXA. The fourth sub-touch electrode SIE2_bmay be disposed in a direction different from the first direction DR1to be spaced apart from first touch electrodes SIE1in the non-light-emitting area NPXA. For example, a space may be between the fourth sub-touch electrode SIE2_band the first touch electrode SIE1in the second direction DR2. Referring toFIG.9B, each of second touch electrodes SIE2including third and fourth sub-touch electrodes SIE2_aand SIE2_bmay not overlap first to third light emitting areas PXA1to PXA3. The second touch electrodes SIE2may be disposed between first and second sub-electrodes SIE1_aand SIE1_badjacent to each other, and the second electrodes SIE2may be disposed not to overlap the first to third light emitting areas PXA1to PXA3. For example, the third sub-touch electrodes SIE2_aof the second touch electrodes SIE2may be disposed between first and second sub-electrodes SIE1_aand SIE1_bof the first touch electrodes SIE1. Accordingly, as the second touch electrodes SIE2are further disposed in each of sensing electrodes IE, the sensitivity of the input sensor ISP may be increased, and the user's visibility may be prevented from being affected by the second touch electrodes SIE2. Referring toFIGS.10A and10E, first and second light emitting areas PXA1and PXA2may be arranged in the second direction DR2in the display panel DP (refer toFIG.6), and third light emitting area PXA3may be spaced apart from the first and second light emitting areas PXA1and PXA2in the first direction DR1and may be arranged in the second direction DR2. For example, the first and second light emitting areas PXA1and PXA2may be sequentially arranged in the second direction DR2; however, the present inventive concept is not limited thereto. Hereinafter, detailed descriptions of the same elements as those described with reference toFIGS.7A to7Cwill be omitted. Referring toFIG.10A, first touch electrodes SIE1may be arranged in a non-light-emitting area NPXA along the first and second directions DR1and DR2. Second touch electrodes SIE2may include a third sub-touch electrode SIE2_aand a fourth sub-touch electrode SIE2_band may be arranged in the first direction DR1. For example, the third sub-touch electrode SIE2_aand the fourth sub-touch electrodes SIE2_bmay each extend in the second direction DR2. The third sub-touch electrode SIE2_amay overlap the first and second light emitting areas PXA1and PXA2and the non-light-emitting area NPXA. The fourth sub-touch electrode SIE2_bmay overlap the third light emitting area PXA3and the non-light-emitting area NPXA. Referring to10B, first touch electrodes SIE1may be disposed in a non-light-emitting area NPXA along the first and second directions DR1and DR2. Second touch electrodes SIE2may include third, fourth, fifth, and sixth sub-touch electrodes SIE2_a, SIE2_b, SIE2_c, and SIE2_dand may be arranged in the second direction DR2. For example, the third, fourth, fifth, and sixth sub-touch electrodes SIE2_a, SIE2_b, SIE2_c, and SIE2_dmay extend in the first direction DR1. The third sub-touch electrode SIE2_amay overlap first and third light emitting areas PXA1and PXA3and the non-light-emitting area NPXA. The fourth sub-touch electrode SIE2_bmay overlap second and third light emitting areas PXA2and PXA3and the non-light-emitting area NPXA. The fifth sub-touch electrode SIE2_cmay overlap the third light emitting area PXA3and the non-light-emitting area NPXA. The sixth sub-touch electrode SIE2_dmay not overlap the first to third light emitting areas PXA1to PXA3and may overlap the non-light-emitting area NPXA. Referring toFIGS.10A and10C, the first touch electrodes SIE1may include a plurality of electrodes electrically connected to each other by the second touch electrodes SIE2rather than being configured as one electrode. When the first touch electrodes SIE1include the plurality of electrodes, a level of a parasitic capacitance occurring between the first touch electrodes SIE1and the electrodes of the display panel DP may be reduced. In addition, when the first touch electrodes SIE1include a metal material, the first touch electrodes SIE1may be viewed from the outside even though the first touch electrodes SIE1are disposed in the non-light-emitting area NPXA. Accordingly, when the first touch electrodes SIE1are formed of the plurality of electrodes electrically connected to each other rather than one electrode, the first touch electrodes SIE1may be prevented from being viewed from the outside. FIG.11is an enlarged plan view showing a portion of an input sensor corresponding to an area AA′ ofFIG.5. Hereinafter, detailed descriptions of the same elements as those described with reference toFIG.7Awill be omitted. Referring toFIGS.4and11, when the resolution of the display panel DP increases, the number of pixels PX included in a unit area may increase, and the size of the non-light-emitting area NPXA surrounding the light emitting area PXA may decrease. Accordingly, difficulties may arise in the process of placing the first touch electrodes SIE1in the non-light-emitting area NPXA or in separating the first touch electrodes SIE1from each other as shown inFIG.7A. In this case, each of the sensing electrodes (refer toFIG.5) may not include the first touch electrodes SIE1but may include the second touch electrodes SIE2overlapping the light emitting area PXA and the non-light-emitting area NPXA. The second touch electrodes SIE2may be disposed to overlap the light emitting area PXA, and thus, difficulties may not arise in the manufacturing process even though the resolution of the display panel DP increases. FIG.12is a plan view showing an input sensor ISP according to an embodiment of the present inventive concept. Hereinafter, detailed descriptions of the same elements as those described with reference toFIG.5will be omitted. Referring toFIG.12, the input sensor ISP according to an embodiment of the present inventive concept may include reception sensing electrodes IE1-1to IE1-5, reception trace lines SL1-1to SL1-5connected to the reception sensing electrodes IE1-1to IE1-5, transmission sensing electrodes IE2-1to IE2-4, and transmission trace lines SL2-1to SL2-4connected to the transmission sensing electrodes IE2-1to IE2-4. The reception sensing electrodes IE1-4to IE1-5may cross the transmission sensing electrodes IE2-1to IE2-4. For example, the reception sensing electrodes IE1-1to IE1-5may be arranged in the first direction DR1and may extend in the second direction DR2. The transmission sensing electrodes IE2-1to IE2-4may be arranged in the second direction DR2and may extend in the first direction DR1. The input sensor ISP may obtain coordinate information by a mutual capacitance method. A capacitance may be formed between the reception sensing electrodes IE1-1to IE1-5and the transmission sensing electrodes IE2-1to IE2-4. The capacitance between the reception sensing electrodes IE1-1to IE1-5and the transmission sensing electrodes IE2-1to IE2-4may be changed by an external input, for example, a touch event. The sensitivity of the input sensor ISP may be determined depending on a variation in capacitance. For example, as the variation in capacitance due to the external input increases, the sensitivity of the input sensor ISP may be increased. Each of the reception sensing electrodes IE1-1to IE1-5may include first sensor portions SSP1and first connection portions CP1, which are arranged in the active area AA. Each of the transmission sensing electrodes IE2-1to IE2-4may include second sensor portions SSP2and second connection portions CP2, which are arranged in the active area AA. FIG.12illustrates the reception sensing electrodes IE1-1to IE1-5and the transmission sensing electrodes IE2-1to IE2-4as having a particular shape, according to the present embodiment; however, this is merely an example and the shape of the reception sensing electrodes IE1-1to IE1-5and the transmission sensing electrodes IE2-1to IE2-4are not limited thereto or thereby. According to an embodiment of the present inventive concept, the reception sensing electrodes IE1-1to IE1-5and the transmission sensing electrodes IE2-1to IE2-4may have a bar shape in which the sensor portion and the connection portion are not distinguished from each other. InFIG.12, each of the first sensor portions SSP1and the second sensor portions SSP2is illustrated as having a lozenge shape; however, the present inventive concept is not limited thereto. For example, the first sensor portions SSP1and the second sensor portions SSP2may have different polygonal shapes from each other. In one reception sensing electrode, the first sensor portions SSP1may be arranged in the second direction DR2, and in one transmission sensing electrode, the second sensor portions SSP2may be arranged in the first direction DR1. Each of the first connection portions CP1may connect the first sensor portions SSP1adjacent to each other, and each of the second connection portions CP2may connect the second sensor portions SSP2adjacent to each other. The reception sensing electrodes IE1-1to IE1-5and the transmission sensing electrodes IE2-1to IE2-4may each have a mesh shape. As the reception sensing electrodes IE1-1to IE1-5and the transmission sensing electrodes IE2-1to IE2-4each have the mesh shape, the parasitic capacitance between the electrodes of the display panel DP (refer toFIG.4) and the reception sensing electrodes IE1-1to IE1-5and the transmission sensing electrodes IE2-1to IE2-4may be reduced. The reception sensing electrodes IE1-1to IE1-5and the transmission sensing electrodes IE2-1to IE2-4, each of which have the mesh shape, may include, for example, silver, aluminum, copper, chromium, nickel, titanium, or the like, which may be processed at a low temperature; however, the present inventive concept is not limited thereto. Although the input sensor ISP is formed through successive processes, the organic light emitting diodes may be prevented from being damaged. The reception trace lines SL1-1to SL1-5may be respectively connected to first ends of the reception sensing electrodes IE1-1to IE1-5. In the present embodiment of the present inventive concept, the input sensor ISP may further include reception trace lines respectively connected to second ends of the reception sensing electrodes IE1-1to IE1-5. The transmission trace lines SL2-1to SL2-4may be respectively connected to first ends of the transmission sensing electrodes IE2-1to IE2-4. In the present embodiment of the present inventive concept, the input sensor ISP may further include transmission trace lines connected to second ends of the transmission sensing electrodes IE2-1to IE2-4. The reception trace lines SL1-1to SL1-5and the transmission trace lines SL2-1to SL2-4may be disposed in the peripheral area NAA of the input sensor ISP. The input sensor ISP may include input pads I-PD respectively extending from first ends of the reception trace lines SL1-1to SL1-5and the transmission trace lines SL2-1to SL2-4and may be disposed in the peripheral area NAA. The input pads I-PD may include first input pads IPD1connected to the reception trace lines SL1-1to SL1-5and second input pads IPD2connected to the transmission trace lines SL2-1to SL2-4. FIG.13is a cross-sectional view showing an input sensor ISP according to an embodiment of the present inventive concept. Referring toFIGS.12and13, the input sensor ISP according to the embodiment of the present inventive concept may include a first sensing insulating layer IIL1, a first conductive layer ICL1, a second sensing insulating layer IIL2, a second conductive layer ICL2, and a third sensing insulating layer IIL3. The first sensing insulating layer IIL1may be disposed on an encapsulation layer TFE. For example, the first sensing insulating layer IIL1may be disposed directly on an encapsulation layer TFE. However, the present inventive concept is not limited thereto. For example, the first sensing insulating layer IIL1may be omitted. Each of the first conductive layer ICL1and the second conductive layer ICL2may include a plurality of conductive patterns. The conductive patterns may include sensing electrodes IE1-1to IE1-5and IE2-1to IE2-4and signal lines SL1-1to SL1-5and SL2-1to SL2-4connected to the sensing electrodes IE1-1to IE1-5and IE2-1to IE2-4. Each of the first sensing insulating layer IIL1, the second sensing insulating layer ILL2, and the third sensing insulating layer IIL3may include an inorganic material and/or an organic material. In the present embodiment, each of the first sensing insulating layer IIL1and the second sensing insulating layer IIL2may be an inorganic layer. For example, the inorganic layer may include at least one of aluminum oxide, titanium oxide, silicon oxide, silicon oxynitride, zirconium oxide, and/or hafnium oxide. The inorganic layer may have a thickness of about 1000 angstroms to about 4000 angstroms. The third sensing insulating layer IIL3may be an organic layer. For example, the organic layer may include at least one of an acrylic-based resin, a methacrylic-based resin, a polyisoprene-based resin, a vinyl-based resin, an epoxy-based resin, a urethane-based resin, a cellulose-based resin, a siloxane-based resin, a polyimide-based resin, a polyamide-based resin, and/or a perylene-based resin. FIG.14is a cross-sectional view taken along a line IV-IV′ ofFIG.12to show a display module according to an embodiment of the present inventive concept. Hereinafter, detailed descriptions of the same elements described with reference toFIGS.6A and8Bwill be omitted. Referring toFIGS.12and14, the second conductive layer ICL2may be disposed on the second sensing insulating layer IIL2, As an example, the second conductive layer ICL2may include the reception sensing electrodes IE1-1to IE1-5and the transmission sensing electrodes IE2-1to IE2-4.FIG.14shows, as an example, a cross-section of a portion of the transmission sensing electrode IE2-3(hereinafter, referred to as a third transmission sensing electrode) arranged in a third column, which is taken along the line IV-IV′ shown inFIG.12. The third transmission sensing electrode IE2-3may include a first touch electrode SIE1and a second touch electrode SIE2. The first touch electrode SIE1may overlap the non-light-emitting area NPXA, and the second touch electrode SIE2may overlap the light emitting area PXA. However, the present inventive concept is not limited thereto. For example, the second touch electrode SIE2may overlap the non-light-emitting area NPXA and the light emitting area PXA. The third transmission sensing electrode IE2-3may further include the second touch electrode SIE2, which is disposed on the same layer as the first touch electrode SIE1, in addition to the first touch electrode SIE1and thus, the sensitivity of the input sensor ISP with respect to the external input may be increased. While the present inventive concept has been described with reference to embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made thereto without departing from the spirit and scope of the present inventive concept. | 66,729 |
11943991 | DETAILED DESCRIPTION Example embodiments of the inventive concepts will now be described more fully with reference to the accompanying drawings, in which example embodiments are shown. Example embodiments of the inventive concepts may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those of ordinary skill in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. Like reference numerals in the drawings denote like elements, and thus their description will be omitted. It will be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present. Like numbers indicate like elements throughout. As used herein the term “and/or” includes any and all combinations of one or more of the associated listed items. Other words used to describe the relationship between elements or layers should be interpreted in a like fashion (e.g., “between” versus “directly between,” “adjacent” versus “directly adjacent,” “on” versus “directly on”). It will be understood that, although the terms “first”, “second”, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer, or section. Thus, a first element, component, region, layer, or section discussed below could be termed a second element, component, region, layer, or section without departing from the teachings of example embodiments. Spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the exemplary term “below” can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments. As used herein, the singular forms “a,” “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises”, “comprising”, “includes” and/or “including,” if used herein, specify the presence of stated features, integers, steps, operations, elements and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and/or groups thereof. Example embodiments of the inventive concepts are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of example embodiments. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, example embodiments of the inventive concepts should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which example embodiments of the inventive concepts belong. It will be further understood that terms, such as those defined in commonly-used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein. FIG.1is a perspective view illustrating an electronic device according to an embodiment of the inventive concept. Referring toFIG.1, an electronic device DD may be a device that is activated by an electrical signal applied thereto. For example, the electronic device DD may be a cellular phone, a tablet, a navigation system, a gaming machine, or a wearable device but is not limited to these examples.FIG.1illustrates an example in which the electronic device DD is a cellular phone. The electronic device DD may include an active region DD-AA which is used to display an image. The active region DD-AA may include a first display surface DD-AA1, which is parallel to a surface defined by two different directions (e.g., a first direction DR1 and a second direction DR2), and a second display surface DD-AA2. The second display surface DD-AA2 may extend from a side edge of the first display surface DD-AA1 to have a curved surface. Here, the second display surface DD-AA2 may be bent from the first display surface DD-AA1 with a specific curvature. In an embodiment, a plurality of second display surfaces DD-AA2 may be provided. In this case, the second display surfaces DD-AA2 may extend from at least two side edges of the first display surface DD-AA1. The active region DD-AA may include one first display surface DD-AA1 and one to four second display surfaces DD-AA2. However, the shape of the active region DD-AA is not limited to this example, and only the first display surface DD-AA1 may be defined in the active region DD-AA. A thickness direction of the electronic device DD may be parallel to a third direction DR3, which is not parallel to the first and second directions DR1 and DR2. A front or top surface and a rear or bottom surface of each member constituting the electronic device DD may be defined based on the third direction DR3. In the present specification, the expression “when viewed in a plan view” and/or “in a plan view” in the present specification will be used to describe a structure viewed in the third direction DR3. FIG.2is a sectional view schematically illustrating an electronic device according to an embodiment of the inventive concept. Referring toFIG.2, the electronic device DD may include a window WP, adhesive layers OCA1 and OCA2, an anti-reflection layer RPP, an antenna layer ANL, a sensor layer IS, a display layer DP, a protection layer PF, and a cover layer CL. The window WP may be combined with a case (not shown) to define an outer appearance of the electronic device DD. The window WP may protect internal components of the electronic device DD from an external impact and may be an element substantially providing the active region DD-AA of the electronic device DD. For example, the window WP may include a glass substrate, a sapphire substrate, or a plastic film. The window WP may have a multi- or single-layered structure. For example, the window WP may have a multi-layered structure including a plurality of plastic films which are coupled to each other by an adhesive layer, or may have a multi-layered structure including a glass substrate and a plastic film which are coupled to each other by an adhesive layer. A first adhesive layer OCA1 may be disposed below the window WP. The window WP and the anti-reflection layer RPP may be combined to each other by the first adhesive layer OCA1. The first adhesive layer OCA1 may be formed of or include at least one of typical adhesive or gluing agents. For example, the first adhesive layer OCA1 may be, for example, an optically clear adhesive (OCA) film, an optically clear resin (OCR), or a pressure sensitive adhesive (PSA) film. The anti-reflection layer RPP may be disposed below the window WP. The anti-reflection layer RPP may be configured to decrease reflectance of a natural or solar light which is incident through the window WP. In an embodiment, the anti-reflection layer RPP may include a phase retarder and a polarizer. The phase retarder may be a film type phase retarder or a liquid crystal coating type phase retarder. The polarizer may be a film type polarizer or of a liquid crystal coating type polarizer. The film type polarizer may include a stretched synthetic resin film, and the liquid crystal coating type polarizer may include liquid crystals arranged with a specific orientation. The phase retarder and the polarizer may further include a protection film. The phase retarder itself, the polarizer itself, or the protection film may be defined as a base layer of the anti-reflection layer RPP. A second adhesive layer OCA2 may be disposed below the anti-reflection layer RPP. The anti-reflection layer RPP and the antenna layer ANL may be combined to each other by the second adhesive layer OCA2. The second adhesive layer OCA2 may be formed of or include the same material as the first adhesive layer OCA1. The antenna layer ANL may be configured to transmit, receive, or transmit/receive wireless communication signals (e.g., radio frequency signals). The antenna layer ANL may include a plurality of antenna patterns, a plurality of antenna lines, and a plurality of antenna pads. The antenna pads may transmit, receive, or transmit/receive signals within the same frequency band or signals within different frequency bands. The antenna patterns, the antenna lines, and the antenna pads will be described below. The antenna layer ANL may be disposed on the sensor layer IS.FIG.2illustrates an example in which the antenna layer ANL is disposed on the entire top surface of the sensor layer IS, but in an embodiment, the antenna layer ANL may be locally disposed on a partial region of the sensor layer IS. In an embodiment, the antenna layer ANL may further include antenna insulating layers which are disposed on the sensor layer IS, and antenna patterns which are disposed on corresponding ones of the antenna insulating layers. In an embodiment, the antenna insulating layers may be disposed in the sensor layer IS. However, the inventive concept is not limited to this example, and in an embodiment, the antenna layer ANL may be provided as an additional substrate including antenna patterns and antenna insulating layers, and the additional substrate may be combined to the sensor layer IS by a lamination process or the like. The sensor layer IS may be configured to obtain information on coordinates of an external input. In an embodiment, the sensor layer IS may be directly disposed on a surface of the display layer DP. For example, the sensor layer IS may be directly integrated on the display layer DP. The sensor layer IS and the display layer DP may be fabricated by processes that are successively performed. However, the inventive concept is not limited to this example, and the sensor layer IS may be fabricated by a separate process and then may be attached to the display layer DP. The sensor layer IS may include a touch panel. The display layer DP may be disposed below the sensor layer IS. The display layer DP may include a base layer SUB, a circuit device layer DP-CL, a display device layer DP-OLED, and a thin encapsulation layer TFL. The display layer DP may be an element, which is configured to substantially produce an image. The display layer DP may be a light-emitting type display layer, but the inventive concept is not limited to this example. For example, the display layer DP may be an organic light emitting display layer, a quantum dot display layer, a micro-LED display layer, or a nano-LED display layer. The protection layer PF may be disposed below the display layer DP. The protection layer PF may protect a bottom surface of the display layer DP. The protection layer PF may be formed of or include polyethylene terephthalate (PET). However, the material of the protection layer PF is not limited to PET. The cover layer CL may be disposed below the protection layer PF. The cover layer CL may have a conductive property. For example, the cover layer CL may be formed of or include copper (Cu). For example, the cover layer CL may be a copper tape. However, the inventive concept is not limited to this example. A ground voltage may be applied to the cover layer CL. However, the inventive concept is not limited to this example, and the cover layer CL may be in a floating state. FIG.3is a plan view illustrating a display layer according to an embodiment of the inventive concept. Referring toFIG.3, the display layer DP may include an active region DP-AA and a peripheral region DP-NAA which is disposed adjacent to the active region DP-AA. The active region DP-AA may be a region on which an image is displayed. A plurality of pixels PX may be disposed in the active region DP-AA. The peripheral region DP-NAA may be a region in which a driving circuit or driving lines connected to the pixels PX are disposed. When viewed in a plan view, the active region DP-AA may be overlapped with the active region DD-AA of the electronic device DD (e.g., seeFIG.1), and the peripheral region DP-NAA may be disposed to surround at least a portion of the active region DP-AA. The display layer DP may include the base layer SUB, the pixels PX, a plurality of signal lines, a plurality of display pads PDD, and a plurality of sensing pads PDT. Each of the pixels PX may be configured to display one of primary colors or one of mixed colors. The primary colors may include red, green, and blue. The mixed colors may include various colors, such as white, yellow, cyan, and magenta. However, the color displayed by each of the pixels PX is not limited to one of these examples. The signal lines may be disposed on the base layer SUB. The signal lines may be connected to the pixels PX and may be used to deliver electrical signals to the pixels PX. The signal lines may include the scan lines GL, the data lines DL, the power lines PL, and the emission control lines EL. However, the inventive concept is not limited to this example, and in an embodiment, the structure of the signal lines may be variously changed. For example, the signal lines may further include an initializing voltage line. A power pattern VDD may be disposed in the peripheral region DP-NAA. The power pattern VDD may be coupled to the power lines PL. Since the display layer DP includes the power pattern VDD, the same power signal may be provided to the pixels PX. The display pads PDD may be disposed in the peripheral region DP-NAA. The display pads PDD may include a first pad PD1 and a second pad PD2. In an embodiment, a plurality of first pads PD1 may be provided. The first pads PD1 may be connected to the data lines DL, respectively. The second pad PD2 may be electrically connected to the power lines PL through the power pattern VDD. The display layer DP may provide external electrical signals which are provided through the display pads PDD to the pixels PX. In an embodiment, in addition to the first and second pads PD1 and PD2, the display pads PDD may further include additional pads which are used to receive other electrical signals and the inventive concept is not limited to this example or a specific embodiment. A driving circuit DIC may be mounted on the peripheral region DP-NAA. The driving circuit DIC may be a timing control circuit which is provided in the form of a chip. The data lines DL may be electrically connected to the first pads PD1, respectively through the driving circuit DIC. However, the inventive concept is not limited to this example, and in an embodiment, the driving circuit DIC may be mounted on an additional film other than the display layer DP. In this case, the driving circuit DIC may be electrically connected to the display pads PDD through the additional film. The sensing pads PDT may be disposed in the peripheral region DP-NAA. The sensing pads PDT may be electrically connected to a plurality of sensing electrodes which are provided in the sensor layer IS (e.g., seeFIG.2) which will be described below. The sensing pads PDT may include a plurality of first sensing pads TD1 and a plurality of second sensing pads TD2. FIG.4is a sectional view illustrating a display layer according to an embodiment of the inventive concept. Referring toFIG.4, the display layer DP may include the base layer SUB, the circuit device layer DP-CL, the display device layer DP-OLED, and the thin encapsulation layer TFL. The display layer DP may include a plurality of insulating layers, a plurality of semiconductor patterns, a plurality of conductive patterns, and a plurality of signal lines. An insulating layer, a semiconductor layer, and a conductive layer may be formed by a coating or deposition process. Thereafter, the insulating layer, the semiconductor layer, and the conductive layer may be selectively patterned using a photolithography process. This method may be used to form the semiconductor patterns, the conductive patterns, and the signal lines which are included in the circuit device layer DP-CL and the display device layer DP-OLED. The base layer SUB may be a base substrate supporting the circuit device layer DP-CL and the display device layer DP-OLED. The base layer SUB may include a synthetic resin layer. The synthetic resin layer may include a thermosetting resin. The base layer SUB may have a multi-layered structure. For example, the base layer SUB may include a first synthetic resin layer, a silicon oxide (SiOx) layer disposed on the first synthetic resin layer, an amorphous silicon (a-Si) layer disposed on the silicon oxide layer, and a second synthetic resin layer disposed on the amorphous silicon layer. Each of the first and second synthetic resin layers may be formed of or include at least one of polyimide-based resins. In addition, each of the first and second synthetic resin layers may include at least one of acrylate-based resins, methacrylate-based resins, polyisoprene-based resins, vinyl-based resins, epoxy-based resins, urethane-based resins, cellulose-based resins, siloxane-based resins, polyamide-based resins, or perylene-based resins. In an embodiment, the base layer SUB may include a glass substrate or a substrate formed of an organic/inorganic composite material. At least one inorganic layer may be disposed on a top surface of the base layer SUB. The inorganic layer may be formed of or include at least one of aluminum oxide, titanium oxide, silicon oxide, silicon oxynitride, zirconium oxide, or hafnium oxide. The inorganic layer may have a multi-layered structure including a plurality of inorganic layers. The multi-layered structure of the inorganic layers may include a barrier layer and/or a buffer layer. In the present embodiment, the display layer DP is illustrated to include a buffer layer BFL. The circuit device layer DP-CL may be disposed on the base layer SUB. The circuit device layer DP-CL may provide signals which are used to drive a light-emitting device OLED in the display device layer DP-OLED to the display device layer DP-OLED. The circuit device layer DP-CL may include the buffer layer BFL, a first transistor T1, a second transistor T2, a first insulating layer10, a second insulating layer20, a third insulating layer30, a fourth insulating layer40, a fifth insulating layer50, and a sixth insulating layer60. The buffer layer BFL may increase a bonding strength between the base layer SUB and the semiconductor pattern. The buffer layer BFL may include a silicon oxide layer and a silicon nitride layer. In an embodiment, the buffer layer BFL may include silicon oxide layers and silicon nitride layers which are alternately stacked. The semiconductor pattern may be disposed on the buffer layer BFL. The semiconductor pattern may be formed of or include polysilicon. However, the inventive concept is not limited to this example and the semiconductor pattern may be formed of or include amorphous silicon or metal oxide. Although a portion of the semiconductor pattern is illustrated inFIG.4, the semiconductor pattern may further include another portion disposed on another region of the pixel PX (e.g., seeFIG.3), when viewed in a plan view. In an embodiment, the semiconductor patterns may be arranged in accordance with a certain rule throughout the pixels PX. Electrical characteristics of the semiconductor pattern may vary depending on its doping state. The semiconductor pattern may include a first region with high conductivity and a second region with low conductivity. The first region may be doped with n-type or p-type dopants. A p-type transistor may include an impurity region doped with p-type dopants and an n-type transistor may include an impurity region doped with n-type dopants. In an embodiment, the second region may be a non-doped region or may have a doping concentration lower than that of the first region. The first region may have higher conductivity than that of the second region and may be substantially used as an electrode or a signal line. The second region may substantially correspond to an active or channel region of a transistor. In other words, the semiconductor pattern may include portions which are used as the active region of the transistor, a source or drain region of the transistor, and a connection electrode or connection signal line, respectively. The pixel PX may include a pixel circuit having seven transistors and a single capacitor, and a light-emitting device connected to the pixel circuit, but the configuration of the pixel may be variously changed. Two transistors T1 and T2 and the light-emitting device OLED which are included in the pixel PX are exemplarily illustrated inFIG.4. The first transistor T1 may include a source S1, an active A1, a drain D1, and a gate G1. The second transistor T2 may include a source S2, an active A2, a drain D2, a gate G2, and an upper electrode UE. The source S1, the active A1, and the drain D1 of the first transistor T1 may be formed of the semiconductor pattern, and the source S2, the active A2, and the drain D2 of the second transistor T2 may be formed of the semiconductor pattern. When viewed in a sectional view, the source S1 or S2 and the drain D1 or D2 may extend from the active A1 or A2 in opposite directions, respectively.FIG.4illustrates a portion of a connection signal line SCL formed of the semiconductor pattern. Although not shown in the drawings, the connection signal line SCL may be electrically connected to the drain D2 of the second transistor T2 when viewed in a plan view. The first insulating layer10may be disposed on the buffer layer BFL. The first insulating layer10may be cover the semiconductor pattern. The first insulating layer10may be an inorganic layer and/or an organic layer and may have a single- or multi-layered structure. The first insulating layer10may be formed of or include at least one of aluminum oxide, titanium oxide, silicon oxide, silicon oxynitride, zirconium oxide, or hafnium oxide. In the present embodiment, the first insulating layer10may be a single silicon oxide layer. Not only the first insulating layer10but also an insulating layer of the circuit device layer DP-CL to be described below may be an inorganic layer and/or an organic layer and may have a single- or multi-layered structure. The inorganic layer may be formed of or include at least one of the materials described above. The gates G1 and G2 may be disposed on the first insulating layer10. The gate G1 or G2 may be portions of a metal pattern. The gates G1 and G2 may be overlapped with the actives A1 and A2. The gates G1 and G2 may be used as a mask in a process of doping the semiconductor pattern. The second insulating layer20may be disposed on the first insulating layer10. The second insulating layer20may cover the gates G1 and G2. The second insulating layer20may be overlapped in common with the pixels PX. The second insulating layer20may be an inorganic layer and/or an organic layer and may have a single- or multi-layered structure. In the present embodiment, the second insulating layer20may be a single silicon oxide layer. The upper electrode UE may be disposed on the second insulating layer20. The upper electrode UE may be overlapped with the gate G2. The upper electrode UE may be a portion of a metal pattern. A portion of the gate G2 and the upper electrode UE may constitute a capacitor. However, the inventive concept is not limited to this example, and in an embodiment, the upper electrode UE may be omitted. The third insulating layer30may be disposed on the second insulating layer20. The third insulating layer30may cover the upper electrode UE. In the present embodiment, the third insulating layer30may be a single silicon oxide layer. A first connection electrode CNE1 may be disposed on the third insulating layer30. The first connection electrode CNE1 may be coupled to the connection signal line SCL through a contact hole CNT-1 which is formed through the first to third insulating layer10,20, and30. The fourth insulating layer40may be disposed on the third insulating layer30. The fourth insulating layer40may cover the first connection electrode CNE1. The fourth insulating layer40may be a single silicon oxide layer. The fifth insulating layer50may be disposed on the fourth insulating layer40. The fifth insulating layer50may be an organic layer. A second connection electrode CNE2 may be disposed on the fifth insulating layer50. The second connection electrode CNE2 may be coupled to the first connection electrode CNE1 through a contact hole CNT-2 which is formed through the fourth insulating layer40and the fifth insulating layer50. The sixth insulating layer60may be disposed on the fifth insulating layer50. The sixth insulating layer60may cover the second connection electrode CNE2. The sixth insulating layer60may be an organic layer. The display device layer DP-OLED may include a pixel definition layer PDL and the light-emitting device OLED. The light-emitting device OLED may include a first electrode AE, a hole control layer HCL, an emission layer EML, an electron control layer ECL, and a second electrode CE. The first electrode AE may be disposed on the sixth insulating layer60. The first electrode AE may be connected to the second connection electrode CNE2 through a contact hole CNT-3, which is formed through the sixth insulating layer60. A display opening OP may be defined in the pixel definition layer PDL. At least a portion of the first electrode AE may be exposed to the outside of the pixel definition layer PDL through the display opening OP. The display layer DP may include a light-emitting region PXA and a non-light-emitting region NPXA disposed adjacent to the light-emitting region PXA. The non-light-emitting region NPXA may be provided to surround the light-emitting region PXA. In the present embodiment, the light-emitting region PXA may be defined to correspond to a region of the first electrode AE exposed through the display opening OP. The light-emitting region PXA and the non-light-emitting region NPXA may be included in the active region DP-AA described with reference toFIG.3. The hole control layer HCL may be disposed in common in the light-emitting region PXA and the non-light-emitting region NPXA. The hole control layer HCL may include a hole transport layer and, in an embodiment, the hole control layer HCL may further include a hole injection layer. The emission layer EML may be disposed on the hole control layer HCL. The emission layer EML may be disposed in a region corresponding to the display opening OP. For example, the emission layer EML may be formed to include a plurality of portions which are respectively disposed in the pixels. The electron control layer ECL may be disposed on the emission layer EML. The electron control layer ECL may include an electron transport layer, and in an embodiment, the electron control layer ECL may further include an electron injection layer. The hole control layer HCL and the electron control layer ECL may be formed in common in the pixels PX using an open mask. The second electrode CE may be disposed on the electron control layer ECL. The second electrode CE may be provided in the form of a single object. The second electrode CE may be disposed in common in the pixels PX. The thin encapsulation layer TFL may be disposed on the display device layer DP-OLED to cover the display device layer DP-OLED. The thin encapsulation layer TFL may include a first inorganic layer, an organic layer, and a second inorganic layer which are sequentially stacked in the third direction DR3. However, the structure of the thin encapsulation layer TFL is not limited to this example. For example, in an embodiment, the thin encapsulation layer TFL may further include a plurality of inorganic layers and a plurality of organic layers. The first inorganic layer may prevent external moisture or oxygen from being permeated into the display device layer DP-OLED. In an embodiment, the first inorganic layer may be formed of or include at least one of silicon nitride, silicon oxide, or compounds thereof. The organic layer may be disposed on the first inorganic layer and may have a flat top surface. Even when the first inorganic layer is formed to have an uneven top surface or particles are formed on the first inorganic layer, the uneven top surface of the first inorganic layer or the particles may be covered by the organic layer to have a planarized surface. The organic layer may be formed of or include at least one of acryl-based organic materials, but the inventive concept is not limited thereto. The second inorganic layer may be disposed on the organic layer to cover the organic layer. The second inorganic layer may encapsulate the organic layer and may prevent moisture in the organic layer from being leaked to the outside. The second inorganic layer may be formed of or include at least one of, for example, silicon nitride, silicon oxide, or compounds thereof. FIG.5Ais a sectional view illustrating an electronic device according to an embodiment of the inventive concept.FIG.5Bis a sectional view illustrating an electronic device according to an embodiment of the inventive concept. Some elements of the display layer DP described with reference toFIG.4are omitted inFIGS.5A and5B, and only the light-emitting device OLED which includes the first electrode AE, the emission layer EML, and the second electrode CE, and the pixel definition layer PDL with the display opening OP are illustrated inFIGS.5A and5B. Referring toFIG.5A, the sensor layer IS according to an embodiment of the inventive concept may be directly disposed on the thin encapsulation layer TFL. The sensor layer IS may include sensing insulating layers ISL1, ISL2, and ISL3 and conductive layers MTL1 and MTL2. The sensing insulating layers ISL1, ISL2, and ISL3 of the sensor layer IS may include at least one inorganic layer. For example, each of the first and second sensing insulating layer ISL1 and ISL2 may be an inorganic layer, and a third sensing insulating layer ISL3 may be an organic layer. A first conductive layer MTL1 may be disposed on the first sensing insulating layer ISL1 and may be covered with the second sensing insulating layer ISL2. A second conductive layer MTL2 may be disposed on the second sensing insulating layer ISL2 and may be covered with the third sensing insulating layer ISL3. A portion of the second conductive layer MTL2 may be connected to a portion of the first conductive layer MTL1 through a contact hole CNT-S which is defined in the second sensing insulating layer ISL2. In the present embodiment, the antenna layer ANL may be disposed on the sensor layer IS. For example, the antenna layer ANL may be disposed on the third sensing insulating layer ISL3. The antenna layer ANL may include an antenna ATL and an antenna insulating layer AIL. The antenna ATL and the antenna insulating layer AIL may be disposed on the third sensing insulating layer ISL3. In an embodiment, an area of the antenna insulating layer AIL may be smaller than an area of the third sensing insulating layer ISL3. The antenna insulating layer AIL may be an inorganic layer or an organic layer. Referring toFIG.5B, a display device DD-A according to an embodiment of the inventive concept may include an antenna layer ANL-A which is disposed in the sensor layer IS. For example, the antenna layer ANL may be disposed between the second sensing insulating layer ISL2 and the third sensing insulating layer ISL3. The antenna layer ANL-A may include the antenna ATL and the antenna insulating layer AIL. The antenna ATL may be disposed on the antenna insulating layer AIL, and the antenna insulating layer AIL may be disposed on the second sensing insulating layer ISL2 and may be covered with the third sensing insulating layer ISL3. In an embodiment, an area of the antenna insulating layer AIL may be smaller than an area of the third sensing insulating layer ISL3. The antenna insulating layer AIL may be an inorganic layer or an organic layer. However, the inventive concept is not limited to this example, and in an embodiment, positions of the third sensing insulating layer ISL3 and the antenna insulating layer AIL of the antenna layer ANL or ANL-A may be changed. For example, the third sensing insulating layer ISL3 may be provided to cover a portion of the second conductive layer MTL2, and the antenna insulating layer AIL may be provided on the third sensing insulating layer ISL3 to cover the third sensing insulating layer ISL3 and a remaining portion of the second conductive layer MTL2. FIG.6Ais a plan view illustrating a sensor layer according to an embodiment of the inventive concept.FIG.6Bis an enlarged plan view illustrating a portion TT′ ofFIG.6A. Referring toFIGS.6A and6B, an active region IS-AA and a peripheral region IS-NAA surrounding the active region IS-AA may be included in the sensor layer IS. The active region IS-AA may be a region which is activated by an electrical signal applied thereto. For example, the active region IS-AA may be configured to sense an input. When viewed in a plan view, the active region IS-AA may be overlapped with the active region DP-AA of the display layer DP (e.g., seeFIG.3) and the peripheral region IS-NAA may be overlapped with the peripheral region DP-NAA of the display layer DP (e.g., seeFIG.3). The sensor layer IS may include a plurality of first sensing electrodes TE1, a plurality of second sensing electrodes TE2, and a plurality of sensing lines TL1 and TL2. The first and second sensing electrodes TE1 and TE2 may be disposed in the active region IS-AA and the sensing lines TL1 and TL2 may be disposed in the peripheral region IS-NAA. The sensor layer IS may be configured to obtain information on an external input based on a variation in capacitance between the first and second sensing electrodes TE1 and TE2. The first sensing electrodes TE1 may extend in the first direction DR1 and may be arranged in the second direction DR2. Each of the first sensing electrodes TE1 may include a plurality of first sensing patterns SP1 and a plurality of first conductive patterns BP1. Each of the first conductive patterns BP1 may be disposed between two adjacent first sensing patterns SP1. In an embodiment, the first sensing patterns SP1 and the first conductive patterns BP1 may be provided to form a single object. Thus, each of the first sensing electrodes TE1 may be provided as a single pattern. The second sensing electrodes TE2 may extend in the second direction DR2 and may be arranged in the first direction DR1. Each of the second sensing electrodes TE2 may include a plurality of second sensing patterns SP2 and a plurality of second conductive patterns BP2. Each of the second conductive patterns BP2 may be provided to electrically connect two adjacent second sensing patterns SP2 to each other. In an embodiment, the second sensing patterns SP2 and the second conductive patterns BP2 may be provided at different levels or on different layers. The sensing lines TL1 and TL2 may include a plurality of first sensing lines TL1 and a plurality of second sensing lines TL2. The first sensing lines TL1 may be electrically connected to the first sensing electrodes TE1, respectively. The second sensing lines TL2 may be electrically connected to the second sensing electrodes TE2, respectively. The first sensing pads TD1 (e.g., seeFIG.3) may be electrically connected to the first sensing lines TL1, respectively, through contact holes. The second sensing pads TD2 (e.g., seeFIG.3) may be electrically connected to the second sensing lines TL2, respectively, through contact holes. The plan view ofFIG.6Billustrates the disposition of the first sensing patterns SP1, the first conductive patterns BP1, the second sensing patterns SP2, and the second conductive patterns BP2 according to an embodiment of the inventive concept. In the present embodiment, each of the first sensing patterns SP1, the second sensing patterns SP2, and the second conductive patterns BP2 may include a conductive line MSL. The conductive line MSL may include a first sensing conductive line MSL1 which extends in a fourth direction DR4 and a second sensing conductive line MSL2 which is extended in a fifth direction DR5. The sensing conductive lines MSL1 and MSL2 may be overlapped with the non-light-emitting region NPXA ofFIG.4but not be overlapped with the light-emitting region PXA. The sensing conductive lines MSL1 and MSL2 may be provided to cross each other to define a plurality of sensing openings IS-OP. The sensing conductive lines MSL1 and MSL2 may have a linewidth ranging from several micrometers to several nanometers. The sensing openings IS-OP may correspond to the light-emitting regions PXA (e.g., seeFIG.4) which are provided in every pixel PX (e.g., seeFIG.3) in a one-to-one correspondence. In the present embodiment, the first sensing patterns SP1, the second sensing patterns SP2, and the second conductive patterns BP2 may be included in the second conductive layer MTL2 described with reference toFIG.5A. The first conductive patterns BP1 may be included in the first conductive layer MTL1 described with reference toFIG.5A. The first sensing patterns SP1 may be connected to a corresponding one of the first conductive patterns BP1 through sensing contact holes TNT formed through a second sensing insulating layer ISL2. Thus, even when the first sensing patterns SP1 are disposed at the same level as the second sensing electrode TE2, the first sensing patterns SP1 may be electrically connected to each other through the first conductive pattern BP1 which is disposed on a first sensing insulating layer ISL1 while being electrically disconnected from the second sensing electrode TE2. Thus, the first conductive pattern BP1 and the second conductive pattern BP2 which are disposed at different levels or on different layers may be overlapped with each other when viewed in a plan view. A portion of each of the sensing lines TL1 and TL2 may be included in the first conductive layer MTL1 and a remaining portion may be included in the second conductive layer MTL2. Interconnection lines, which are disposed at different levels or on different layers, may be connected to each other through contact holes which are defined in the second sensing insulating layer ISL2. However, the inventive concept is not limited to this example, and the sensing lines TL1 and TL2 may be included in only one of the first and second conductive layers MTL1 and MTL2. In an embodiment, at least one of the first and second sensing patterns SP1 and SP2 may be overlapped with an antenna pattern ANT to be described below (e.g., seeFIG.7). A region ANA provided with the antenna pattern ANT is depicted by a dotted line in the plan view ofFIG.6A. In an embodiment, some of the sensing patterns which are included in the sensing electrodes TE1 and TE2 and are at least partially overlapped with the antenna pattern ANT may constitute a pattern group OV. In the present specification, patterns included in the pattern group OV may be defined as “first patterns”, and sensing patterns of the sensing electrodes TE1 and TE2 which are not included in the pattern group OV (i.e., not overlapped with the antenna pattern ANT when viewed in a plan view) may be defined as “second patterns”. FIG.7is a plan view illustrating an antenna layer according to an embodiment of the inventive concept.FIG.8is an enlarged plan view illustrating a portion QQ′ ofFIG.7. Referring toFIG.7, a plurality of antennas AT1 to AT9 may be arranged to be spaced apart from each other in the first direction DR1. The electronic device DD (e.g., seeFIG.1) may include short sides parallel to the first direction DR1 and long sides parallel to the second direction DR2. In an embodiment, the antennas AT1 to AT9 may be disposed near an upper short side of the electronic device DD. However, the inventive concept is not limited to this example, and at least one of the antennas AT1 to AT9 may be omitted or the antennas AT1 to AT9 may be arranged near one of the long sides of the electronic device DD. In an embodiment, the antennas AT1 to AT9 may be disposed on the antenna insulating layers AL1 to AL9, respectively (i.e., in a one-to-one correspondence). The antenna insulating layers AL1 to AL9 may be arranged to be spaced apart from each other in the first direction DR1. In an embodiment, the antenna insulating layer may be a single pattern which is disposed to overlapped with a plurality of antennas in common, but the inventive concept is not limited to this example or a specific embodiment. Each antenna ATL may include an antenna pattern ANT, an antenna line ANF, and an antenna pad ANP. All of the antennas AT1 to AT9 may have the same features as the antenna ATL to be described below. The antenna pattern ANT and at least a portion of the antenna line ANF may be disposed in an active region AN-AA, and a remaining portion of the antenna line ANF and the antenna pad ANP may be disposed in a peripheral region AN-NAA. Since an area of the active region DP-AA (e.g., seeFIG.3) is secured, it may be possible to easily secure a space for the antenna pattern ANT, even when a size or thickness of the electronic device DD (e.g., seeFIG.1) or an area of the peripheral region DP-NAA (e.g., seeFIG.3) is reduced. The antenna ANL may be operated within a specific frequency range. The frequency range may include a resonance frequency. In an embodiment, the resonance frequency may be 28 GHz. However, this frequency is just one example, and in an embodiment, the resonance frequency is not limited to this frequency. For example, the resonance frequency may be changed depending on a frequency range of communication signals to be used. Each of the antenna pattern ANT may have a first width in the first direction DR1 and a second width in the second direction DR2. The second width may be inversely proportional to the resonance frequency. However, the inventive concept is not limited to this example, and each of the first and second widths may be determined based on a dielectric material disposed below the antenna pattern ANT and a frequency range of communication signals to be used. The antenna pattern ANT may be overlapped with one of the first patterns which are included in the pattern group OV. The antenna pattern ANT may include antenna openings AN-OP which are defined by a plurality of conductive lines that are formed to cross each other. An area of each of the antenna openings AN-OP may be larger than an area of the light-emitting region PXA (e.g., seeFIG.4). Thus, an image which is emitted from the active region DP-AA (e.g., seeFIG.3) may be transmitted to the outside through the antenna openings AN-OP. The shape of the antenna pattern ANT in the active region AN-AA may be variously changed, and this may increase a degree of freedom in designing the antenna pattern ANT. The antenna line ANF may be connected to a portion of the antenna pattern ANT. The antenna line ANF may extend from the antenna pattern ANT toward the peripheral region AN-NAA to the antenna pad ANP. The antenna line ANF may be used to supply electricity to the antenna pattern ANT. The antenna line ANF and the antenna pattern ANT may be formed of or include the same material and may be formed by the same process. The antenna pattern ANT may be formed of or include at least one of carbon nanotube, metallic materials, metal alloys, or composite materials thereof and may have a single-layered structure or a multi-layered structure in which titanium (Ti), aluminum (Al), and titanium (Ti) layers are sequentially stacked. For example, the metallic materials may include silver (Ag), copper (Cu), aluminum (Al), gold (Au), or platinum (Pt), but the inventive concept is not limited to this example. Each of the antenna line ANF may have a first width in the first direction DR1 and may have a second width in the second direction DR2. The second width may be chosen to have a value that is suitable for an impedance matching between the antenna pattern ANT and the antenna line ANF. Thus, the transmission efficiency of a signal between the antenna line ANF and the antenna pattern ANT may be improved, and the display device DD (e.g., seeFIG.1) with improved communication efficiency may be provided. The antenna pad ANP may be connected to a portion of the antenna line ANF. The antenna pad ANP may be disposed in the peripheral region AN-NAA. FIG.8illustrates first patterns SP1-1, SP2-1, and SP2-2 which are overlapped with the antenna pattern ANT of a fourth antenna AL4 of the pattern group OV and the antenna pattern ANT. The antenna insulating layer may correspond to one of the antenna insulating layers AIL described with reference toFIGS.5A and5B. In an embodiment, the antenna pattern ANT may include first antenna conductive lines ASL. The first antenna conductive lines ASL may extend in the fourth direction DR4 and may be arranged to be spaced apart from each other in the fifth direction DR5. The first patterns may include second sensing patterns SP2-1 and SP2-2 which are respectively included in two different second sensing electrodes TE2 (e.g., seeFIG.6A) receiving different signals, and the first sensing pattern SP1-1 which is included in one of the first sensing electrodes TE1 (e.g., seeFIG.6A). Each of the first patterns SP1-1, SP2-1, and SP2-2 may include first sensing conductive lines MSL. The first sensing conductive lines MSL may extend in the fifth direction DR5 and may be arranged to be spaced apart from each other in the fourth direction DR4. The light-emitting regions PXA (e.g., seeFIG.4) may be disposed between adjacent first antenna conductive lines ASL and the light-emitting regions PXA (e.g., seeFIG.4) may be disposed between adjacent first sensing conductive lines MSL. In an embodiment, the first antenna conductive lines ASL in the antenna pattern ANT and the first sensing conductive lines MSL in the first patterns SP1-1, SP2-1, and SP2-2 may be overlapped with the non-light-emitting region NPXA ofFIG.4and may be spaced apart from the light-emitting region PXA. In other words, the first antenna conductive lines ASL and the first sensing conductive lines MSL may not affect an optical path of light that is emitted from the light-emitting device OLED (e.g., seeFIG.4). In an embodiment, the first antenna conductive lines ASL and the first sensing conductive lines MSL may not include conductive lines extending in the same direction. Accordingly, it may be possible to prevent a signal interference issue and a coupling phenomenon which may occur when the first antenna conductive lines ASL and the first sensing conductive lines MSL are overlapped with each other when viewed in a plan view. Thus, it may be possible to improve the antenna performance and sensing performance of the electronic device DD (e.g., seeFIG.1). FIG.9is a plan view illustrating an arrangement of an antenna pattern and a sensor pattern according to an embodiment of the inventive concept.FIG.9illustrates a region corresponding toFIG.8. For concise description, an element previously described with reference toFIGS.1to8may be identified by the same or similar reference number without repeating an overlapping description thereof. An antenna insulating layer AL may correspond to one of the antenna insulating layers AIL described with reference toFIGS.5A and5B. Referring toFIG.9, an antenna pattern ANT-A may include first and second antenna conductive lines ASL1 and ASL2. The first antenna conductive lines ASL1 may extend in the fourth direction DR4 and may be arranged to be spaced apart from each other in the fifth direction DR5. The second antenna conductive lines ASL2 may extend in the fifth direction DR5 and may be arranged to be spaced apart from each other in the fourth direction DR4. In the present embodiment, densities of the first and second antenna conductive lines ASL1 and ASL2 may vary depending on a position in the antenna pattern ANT-A. For example, a portion of the antenna pattern ANT-A overlapped with the first patterns SP1-1, SP2-1, and SP2-2 may include only the first antenna conductive lines ASL1 and may not include the second antenna conductive lines ASL2. Thus, in a region in which the antenna pattern ANT-A is overlapped with the first patterns SP1-1, SP2-1, and SP2-2, a plurality of light-emitting regions PXA (e.g., seeFIG.4) may be disposed between adjacent first antenna conductive lines ASL1, and in a region in which the antenna pattern ANT-A is not overlapped with the first patterns SP1-1, SP2-1, and SP2-2, one light-emitting region PXA (e.g., seeFIG.4) may be disposed in the antenna opening AN-OP defined by the first and second antenna conductive lines ASL1 and ASL2. Each of the first patterns SP1-1, SP2-1, and SP2-2 of a pattern group OV-A may include the first and second sensing conductive lines MSL1 and MSL2. The first sensing conductive lines MSL1 may extend in the fourth direction DR4 and may be arranged to be spaced apart from each other in the fifth direction DR5. The second sensing conductive lines MSL2 may extend in the fifth direction DR5 and may be arranged to be spaced apart from each other in the fourth direction DR4. In the present embodiment, densities of the first and second sensing conductive lines MSL1 and MSL2 may vary depending on a position in each of the first patterns SP1-1, SP2-1, and SP2-2. For example, a portion of the first patterns SP1-1, SP2-1, and SP2-2, which are overlapped with the antenna pattern ANT-A, may include only the second sensing conductive lines MSL2 and may not include the first sensing conductive lines MSL1. Thus, in a region in which the first patterns SP1-1, SP2-1, and SP2-2 are overlapped with the antenna pattern ANT-A, a plurality of light-emitting regions PXA (e.g., seeFIG.4) may be disposed between adjacent second sensing conductive lines MSL2, and in a region in which the first patterns SP1-1, SP2-1, and SP2-2 are not overlapped with the antenna pattern ANT-A, one light-emitting region PXA (e.g., seeFIG.4) may be disposed in a sensing opening IS-OP defined by the first and second sensing conductive lines MSL1 and MSL2. According to the present embodiment, since only conductive lines extending in different directions are disposed in the overlapping region between the antenna pattern ANT-A and the first patterns SP1-1, SP2-1, and SP2-2 and conductive lines which has a density similar to the second patterns are disposed in the non-overlapping region, it may be possible to improve the antenna performance and sensing performance of the electronic device DD (e.g., seeFIG.1). FIG.10is a plan view illustrating an arrangement of an antenna pattern and a sensor pattern according to an embodiment of the inventive concept.FIG.11is a plan view illustrating an arrangement of an antenna pattern and a sensor pattern according to an embodiment of the inventive concept. Each ofFIGS.10and11illustrates a region corresponding toFIG.8. The antenna insulating layer AL ofFIGS.10and11may correspond to one of the antenna insulating layers AIL described with reference toFIGS.5A and5B. Referring toFIG.10, an antenna pattern ANT-B may include the first and second antenna conductive lines ASL1 and ASL2. The first antenna conductive lines ASL1 may extend in the fourth direction DR4 and may be arranged to be spaced apart from each other in the fifth direction DR5. The second antenna conductive lines ASL2 may extend in the fifth direction DR5 and may be arranged to be spaced apart from each other in the fourth direction DR4. The first and second antenna conductive lines ASL1 and ASL2 may be provided to cross each other and to define the antenna openings AN-OP. In the present embodiment, a plurality of light-emitting regions PXA (e.g., seeFIG.4) may be disposed in one antenna opening AN-OP. Thus, an area of the antenna opening AN-OP may be larger than an area of the sensing opening IS-OP (e.g., seeFIG.6B) defined in the second patterns. Each of the first patterns SP1-1, SP2-1, and SP2-2 of a pattern group OV-B may include the first and second sensing conductive lines MSL1 and MSL2. The first sensing conductive lines MSL1 may extend in the fourth direction DR4 and may be arranged to be spaced apart from each other in the fifth direction DR5. The second sensing conductive lines MSL2 may extend in the fifth direction DR5 and may be arranged to be spaced apart from each other in the fourth direction DR4. The first and second sensing conductive lines MSL1 and MSL2 may be provided to cross each other and thereby to define the sensing openings IS-OP. In the present embodiment, a plurality of light-emitting regions PXA (e.g., seeFIG.4) may be disposed in one sensing opening IS-OP. Thus, an area of the sensing opening IS-OP defined in the first patterns SP1-1, SP2-1, and SP2-2 may be larger than an area of the sensing opening IS-OP (e.g., seeFIG.6B) defined in the second patterns. The first and second antenna conductive lines ASL1 and ASL2 are overlapped with each other at the first intersection points AX. In the present embodiment, each of the first intersection points AX may be disposed at a center of a corresponding sensing opening IS-OP. In addition, the first and second sensing conductive lines MSL1 and MSL2 are overlapped with each other at the second intersection points IX. In the present embodiment, each of the second intersection points IX may be disposed at a center of a corresponding antenna opening AN-OP. In other words, even when the antenna pattern ANT-B includes conductive lines that extend in the same direction as conductive lines included in the first patterns SP1-1, SP2-1, and SP2-2, it may be possible to minimize an interference issue between the antenna pattern ANT-B and the first patterns SP1-1, SP2-1, and SP2-2, because the conductive lines are disposed to have a structure minimizing an overlapping therebetween. Thus, it may be possible to improve the antenna performance and sensing performance of the electronic device DD (e.g., seeFIG.1). Referring toFIG.11, an antenna pattern ANT-C according to an embodiment of the inventive concept may include the first and second antenna conductive lines ASL1 and ASL2. The first antenna conductive lines ASL1 may extend in the fourth direction DR4 and may be arranged to be spaced apart from each other in the fifth direction DR5. The second antenna conductive lines ASL2 may extend in the fifth direction DR5 and may be arranged to be spaced apart from each other in the fourth direction DR4. The first and second antenna conductive lines ASL1 and ASL2 may be provided to cross each other and to define the antenna openings AN-OP. In the present embodiment, a plurality of light-emitting regions PXA (e.g., seeFIG.4) may be disposed in one antenna opening AN-OP. Thus, an area of the antenna opening AN-OP may be larger than an area of the sensing opening IS-OP (e.g., seeFIG.6B) defined in the second patterns. Each of the first patterns SP1-1, SP2-1, and SP2-2 of a pattern group OV-C may include the first and second sensing conductive lines MSL1 and MSL2. The first sensing conductive lines MSL1 may extend in the fourth direction DR4 and may be arranged to be spaced apart from each other in the fifth direction DR5. The second sensing conductive lines MSL2 may extend in the fifth direction DR5 and may be arranged to be spaced apart from each other in the fourth direction DR4. In the present embodiment, densities of the first and second sensing conductive lines MSL1 and MSL2 may vary depending on a position in each of the first patterns SP1-1, SP2-1, and SP2-2. For example, in a region in which the first patterns SP1-1, SP2-1, and SP2-2 are not overlapped with the antenna pattern ANT-C, the first and second sensing conductive lines MSL1 and MSL2 may be provided to cross each other and to define first sensing openings IS-OP1. An area of one first sensing opening IS-OP1 may be equal to an area of the sensing opening IS-OP (e.g., seeFIG.6B) defined in the second patterns. In a region in which the first patterns SP1-1, SP2-1, and SP2-2 are overlapped with the antenna pattern ANT-C, the first and second sensing conductive lines MSL1 and MSL2 may be provided to cross each other and to define second sensing openings IS-OP2. An area of one second sensing opening IS-OP2 may be larger than an area of the sensing opening IS-OP (e.g., seeFIG.6B) defined in the second patterns and may be similar to an area of the antenna opening AN-OP. The first and second antenna conductive lines ASL1 and ASL2 are overlapped with each other at the first intersection points AX. In the present embodiment, each of the first intersection points AX may be disposed at a center of a corresponding sensing opening IS-OP. In addition, the first and second sensing conductive lines MSL1 and MSL2 are overlapped with each other at a second intersection points IX. In the present embodiment, each of the second intersection points IX may be disposed in a corresponding antenna opening AN-OP. According to the present embodiment, in a region in which the first patterns SP1-1, SP2-1, and SP2-2 are not overlapped with the antenna pattern ANT-C, conductive lines may be additionally disposed to increase a pattern density, and this may make it possible to improve the sensing performance of the electronic device DD (e.g., seeFIG.1). FIG.12Ais a plan view illustrating an arrangement of an antenna pattern and a sensor pattern according to an embodiment of the inventive concept.FIG.12Bis a sectional view taken along a line I-F ofFIG.12A.FIG.12illustrates a region corresponding toFIG.8. Referring toFIGS.12A and12B, the first patterns SP1-1, SP2-1, and SP2-2 of a pattern group OV-D and an antenna pattern ANT-D may be disposed at the same level or on the same layer. In other words, the antenna insulating layer AL described with reference toFIGS.5A and5Bmay be omitted, and the antenna pattern ANT-D may be disposed at the same level as the second conductive layer MTL2. In an embodiment, the antenna pattern ANT-D may include the first and second antenna conductive lines ASL1 and ASL2. The first antenna conductive lines ASL1 may extend in the fourth direction DR4 and may be arranged to be spaced apart from each other in the fifth direction DR5. The second antenna conductive lines ASL2 may extend in the fifth direction DR5 and may be arranged to be spaced apart from each other in the fourth direction DR4. The first and second antenna conductive lines ASL1 and ASL2 may be provided to cross each other and to define the antenna openings AN-OP. In the present embodiment, a plurality of light-emitting regions PXA (e.g., seeFIG.4) may be disposed in one antenna opening AN-OP. Thus, an area of the antenna opening AN-OP may be greater than an area of the sensing opening IS-OP (e.g., seeFIG.6B) defined in the second patterns. Each of the first patterns SP1-1, SP2-1, and SP2-2 of the pattern group OV-D may include the first and second sensing conductive lines MSL1 and MSL2. In the present embodiment, each of the first patterns SP1-1, SP2-1, and SP2-2 may further include first bridge patterns CP1, CP2-1, and CP2-2. The first sensing conductive lines MSL1 may extend in the fourth direction DR4 and may be arranged to be spaced apart from each other in the fifth direction DR5. The second sensing conductive lines MSL2 may extend in the fifth direction DR5 and may be arranged to be spaced apart from each other in the fourth direction DR4. In portions of the first patterns SP1-1, SP2-1, and SP2-2, which are not overlapped with the antenna pattern ANT-D, the first and second sensing conductive lines MSL1 and MSL2 may be provided to cross each other and to define the sensing openings IS-OP. A plurality of light-emitting regions PXA (e.g., seeFIG.4) may be disposed in one sensing opening IS-OP. Thus, an area of the sensing opening IS-OP may be greater than an area of the sensing opening IS-OP (e.g., seeFIG.6B) defined in the second patterns. Each of the first and second sensing conductive lines MSL1 and MSL2 may have disconnected portions at portions of the first patterns SP1-1, SP2-1, and SP2-2 overlapped with the antenna pattern ANT-D. Since the first patterns SP1-1, SP2-1, and SP2-2 and the antenna pattern ANT-D are disposed on the second sensing insulating layer ISL2, the first and second sensing conductive lines MSL1 and MSL2 crossing the antenna pattern ANT-D may be disconnected, when viewed in a plan view. The disconnected conductive lines may be connected to each other through the first bridge patterns CP1, CP2-1, and CP2-2. For example, the first bridge patterns CP1, CP2-1, and CP2-2 may be disposed on the first sensing insulating layer ISL1 and may connect the cut conductive lines through first contact holes CT1 defined in the second sensing insulating layer IL2. According to the present embodiment, by disposing the sensing patterns in the sensor layer IS (e.g., seeFIG.2) and the antenna pattern ANT-D on the same layer or at the same level and omitting the antenna insulating layer, it may be possible to realize the electronic device DD (e.g., seeFIG.1) in a slim shape. FIG.13Ais a plan view illustrating an arrangement of an antenna pattern and a sensor pattern according to an embodiment of the inventive concept.FIG.13Bis a sectional view taken along a line II-IT ofFIG.13A.FIG.13illustrates a region corresponding toFIG.8. Referring toFIGS.13A and13B, the first patterns SP1-1, SP2-1, and SP2-2 of a pattern group OV-E and an antenna pattern ANT-E may be disposed at the same level or on the same layer. In other words, the antenna insulating layer AL described with reference toFIGS.5A and5Bmay be omitted, and the antenna pattern ANT-E may be disposed at the same level as the second conductive layer MTL2. In an embodiment, the antenna pattern ANT-E may include the first and second antenna conductive lines ASL1 and ASL2. The first antenna conductive lines ASL1 may extend in the fourth direction DR4 and may be arranged to be spaced apart from each other in the fifth direction DR5. The second antenna conductive lines ASL2 may extend in the fifth direction DR5 and may be arranged to be spaced apart from each other in the fourth direction DR4. In an embodiment, the antenna pattern ANT-E may further include second bridge patterns AC. The first and second antenna conductive lines ASL1 and ASL2 may be provided to cross each other and to define the antenna openings AN-OP. In the present embodiment, a plurality of light-emitting regions PXA (e.g., seeFIG.4) may be disposed in one antenna opening AN-OP. Thus, an area of the antenna opening AN-OP may be greater than an area of the sensing opening IS-OP (e.g., seeFIG.6B) defined in the second patterns. Each of the first patterns SP1-1, SP2-1, and SP2-2 of the pattern group OV-E may include the first and second sensing conductive lines MSL1 and MSL2. The first sensing conductive lines MSL1 may extend in the fourth direction DR4 and may be arranged to be spaced apart from each other in the fifth direction DR5. The second sensing conductive lines MSL2 may extend in the fifth direction DR5 and may be arranged to be spaced apart from each other in the fourth direction DR4. In portions of the first patterns SP1-1, SP2-1, and SP2-2 which are not overlapped with the antenna pattern ANT-E, the first and second sensing conductive lines MSL1 and MSL2 may be provided to cross each other and to define the sensing openings IS-OP. A plurality of light-emitting regions PXA (e.g., seeFIG.4) may be disposed in one sensing opening IS-OP. Thus, an area of the sensing opening IS-OP may be greater than an area of the sensing opening IS-OP (e.g., seeFIG.6B) defined in the second patterns. Each of the first and second antenna conductive lines ASL1 and ASL2 may have disconnected portions at a portion of the antenna pattern ANT-E overlapped with the first patterns SP1-1, SP2-1, and SP2-2. Since the first patterns SP1-1, SP2-1, and SP2-2 and the antenna pattern ANT-E are disposed on the second sensing insulating layer ISL2, the first and second antenna conductive lines ASL1 and ASL2 crossing the first patterns SP1-1, SP2-1, and SP2-2 may be disconnected, when viewed in a plan view. The cut conductive lines may be connected to each other by the second bridge patterns AC. For example, the second bridge patterns AC may be disposed on the first sensing insulating layer ISL1 and may connect the disconnected conductive lines through second contact holes CT2 which are formed in the second sensing insulating layer IL2. In the present embodiment, by disposing the sensing patterns in the sensor layer IS (e.g., seeFIG.2) and the antenna pattern ANT-E on the same layer or at the same level and omitting the antenna insulating layer, it may be possible to realize the electronic device DD (e.g., seeFIG.1) in a slim shape. According to an embodiment of the inventive concept, it may be possible to prevent a signal interference issue and a coupling phenomenon, which may occur when conductive lines in an antenna pattern and conductive lines in a sensing pattern are overlapped with each other. Thus, it may be possible to realize an electronic device with improved antenna performance and improved sensing performance. While example embodiments of the inventive concept have been particularly shown and described, it will be understood by one of ordinary skill in the art that variations in form and detail may be made therein without departing from the spirit and scope of the attached claims. | 67,493 |
11943992 | DETAILED DESCRIPTION Hereinafter, embodiments of display devices will be described in detail with reference to the accompanying drawings. In the accompanying drawings, same or similar reference numerals refer to the same or similar elements. It will be understood that when an element is referred to as being related to another element such as being “on” another element, it can be directly on the other element or intervening elements may be present therebetween. In contrast, when an element is referred to as being related to another element such as being “directly on” another element, there are no intervening elements present. It will be understood that, although the terms “first,” “second,” “third” etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, “a first element,” “component,” “region,” “layer” or “section” discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, “a”, “an,” “the,” and “at least one” do not denote a limitation of quantity, and are intended to include both the singular and plural, unless the context clearly indicates otherwise. For example, “an element” has the same meaning as “at least one element,” unless the context clearly indicates otherwise. “At least one” is not to be construed as limiting “a” or “an.” “Or” means “and/or.” As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. It will be further understood that the terms “comprises” and/or “comprising,” or “includes” and/or “including” when used in this specification, specify the presence of stated features, regions, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, regions, integers, steps, operations, elements, components, and/or groups thereof. Furthermore, relative terms, such as “lower” or “bottom” and “upper” or “top,” may be used herein to describe one element's relationship to another element as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures. For example, if the device in one of the figures is turned over, elements described as being on the “lower” side of other elements would then be oriented on “upper” sides of the other elements. The term “lower,” can therefore, encompass both an orientation of “lower” and “upper,” depending on the particular orientation of the figure. Similarly, if the device in one of the figures is turned over, elements described as “below” or “beneath” other elements would then be oriented “above” the other elements. The terms “below” or “beneath” can, therefore, encompass both an orientation of above and below. “About” or “approximately” as used herein is inclusive of the stated value and means within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, considering the measurement in question and the error associated with measurement of the particular quantity (i.e., the limitations of the measurement system). For example, “about” can mean within one or more standard deviations, or within ±30%, 20%, 10% or 5% of the stated value. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein. Embodiments are described herein with reference to cross section illustrations that are schematic illustrations of idealized embodiments. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments described herein should not be construed as limited to the particular shapes of regions as illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region illustrated or described as flat may, typically, have rough and/or nonlinear features. Moreover, sharp angles that are illustrated may be rounded. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the present claims. FIG.1is a plan view showing an embodiment of a display device100. Referring toFIG.1, a display device100may include a first area10, a second area20, and a third area30. The second area20may be between the first area10and the third area30, without being limited thereto. The second area20may be adjacent to the first area10and adjacent to the third area30along a plane (e.g., in a plan view). In this case, the second area20may substantially surround the first area10, and the third area30may substantially surround the second area20. In some embodiments, the third area30may not completely surround the second area20. In embodiments, each of the first area10and the second area20may have a circular shape when viewed in a plan view, and the third area30may have a rectangular shape when viewed in a plan view. The third area30may have a total planar area which includes a planar area of the second area20and a planar area of the first area10, such that the first area10and the second area20may be considered as “in” the third area30. Various layers and components of the display device100may include a first area10, a second area20and a third area30corresponding to those described above. An optical module700(shown inFIG.3) that will be described below may be disposed in or corresponding to the first area10, and a light blocking layer630(shown inFIG.3) that will be described below may be disposed in or corresponding to the second area20. In addition, a light emitting structure200(e.g., light emitting element) (shown inFIG.3) provided in plural including a plurality of light emitting structures200, which will be described below, may be disposed in or corresponding to the third area30. In other words, an image such as a video image may be displayed in the third area30, and the first area10and the second area20may be non-display areas. In embodiments, a first non-display area (e.g., first area10) and a second non-display area (e.g., second area20) may be considered as “in” the display area (e.g., total planar area of the third area30). The first non-display area may be considered as “in” the second non-display area in the plan view. The light emitting structures200may be repeatedly arranged in the third area30. In an embodiment, for example, the light emitting structures200may include a red (R) light emitting structure, a green (G) light emitting structure, and a blue (B) light emitting structure. The red, green, and blue light emitting structures may be arranged by using an RGB stripe scheme in which rectangles having the same size are sequentially arranged, an S-stripe scheme including a blue light emitting structure having a relatively large area, a WRGB scheme further including a white light emitting structure, a PenTile™ scheme in which RG-GB patterns are repeatedly arranged, or the like. In addition, at least one driving transistor, at least one switching transistor, at least one capacitor, and the like may be disposed in the third area30to correspond to each of the light emitting structures200. However, although each of the first area10and the second area20has been described as having a circular shape when viewed in a plan view, the planar shape is not limited thereto. In an embodiment, for example, each of the first area10and the second area20may have a triangular shape, a rhombic shape, a polygonal shape, a rectangular shape, a track shape, or an elliptical shape when viewed in a plan view. In addition, although the third area30has been described as having a rectangular shape when viewed in a plan view, the planar shape is not limited thereto. In an embodiment, for example, the third area30may have a triangular shape, a rhombic shape, a polygonal shape, a circular shape, a track shape, or an elliptical shape when viewed in a plan view. FIG.2is a partially enlarged plan view showing an embodiment of region A ofFIG.1, andFIG.3is a cross-sectional view taken along line I-I′ ofFIG.2.FIG.4is a partially enlarged cross-sectional view showing an embodiment of region B ofFIG.3, andFIG.5is a plan view showing an embodiment of a sensing structure380(e.g., sensing layer) included in the display device100ofFIG.3. The first area10shown inFIG.2may correspond to an inner area of a circle with which a leader line makes contact, and the second area20shown inFIG.2may correspond to a portion of the inner area of the circle with which the leader line makes contact except for the first area10. In other words,FIG.2is a plan view showing a state in which a filling layer650is disposed in the first area10while a light blocking layer630(e.g., light blocking pattern) is disposed in the second area20. Referring toFIGS.2,3,4, and5, the display device100may include a lower substrate110, a semiconductor element structure250, a light emitting structure200, an upper substrate450, a filling layer650, a light blocking layer630, an optical module700, a sensing structure380, a polarizing film layer430, an adhesive layer590, a cover window600, and the like. In this case, the semiconductor element structure250may include an active layer130, a gate insulating layer150, a gate electrode170, an interlayer insulating layer190, a source electrode210, a drain electrode230, and a planarization layer270. The light emitting structure200may include a lower electrode290(e.g., first electrode), a pixel defining layer310, a light emitting layer330, and an upper electrode340(e.g., second electrode). The first electrode may face the second electrode with the light emitting layer330therebetween. In addition, the sensing structure380may include a first sensing electrode382provided in plural including a plurality of first sensing electrodes382, a second sensing electrode384provided in plural including a plurality of second sensing electrodes384, and a sensing connection electrode386provided in plural including a plurality of sensing connection electrodes386. Referring again toFIGS.2and3, the lower substrate110including a transparent material may be provided. The lower substrate110may include a quartz substrate, a synthetic quartz substrate, a calcium fluoride substrate, a fluorine-doped quartz substrate (e.g., F-doped quartz substrate), a soda lime glass substrate, a non-alkali glass substrate, and the like. In other embodiments, the lower substrate110may be a transparent resin substrate having flexibility. An example of the transparent resin substrate that may be used in the lower substrate110includes a polyimide substrate. In this case, the polyimide substrate may have a stacked structure including a first polyimide layer, a barrier film layer, a second polyimide layer, and the like. Since the display device100includes the first area10, the second area20, and the third area30, the lower substrate110may also be divided into a first area10, a second area20, and a third area30. The optical module700may be disposed in the first area10on a bottom surface of the lower substrate110. A portion of the lower substrate110is between the filling layer650and the optical module700. The first area10may correspond to the optical module700. In the embodiments, a shape of the optical module700may be the same as a shape of the first area10when viewed in a plan view. In an embodiment, the optical module700may have a circular shape when viewed in a plan view. Light incident to the display device100from outside thereof (e.g., external light) may pass through the cover window600, the adhesive layer590, the upper substrate450, the filling layer650and the lower substrate110in order, and the light may be provided to the optical module700. The optical module700may include a camera module, a face recognition sensor module, a pupil recognition sensor module, a proximity sensor module, a motion detection sensor module, an infrared sensor module, or an illuminance sensor module. That is, the optical module700may provide a function of the display device100. In an embodiment, the optical module700receives external light from outside the display device100to provide the function of the display device100. In the embodiments, the optical module700may be configured as a camera module. The camera module may function to collect the light incident from outside the display device100, and the display device100may function to obtain an image from the camera module. The semiconductor element structure250may be disposed in the third area30and a part of the second area20on the lower substrate110, and the light emitting structure200may be disposed in the third area30on the semiconductor element structure250. The light emitting structure200may be excluded from the second area20and the first area10, without being limited thereto. As shown inFIG.4, the active layer130may be disposed in the third area30on the lower substrate110. The active layer130may include a metal oxide semiconductor, an inorganic semiconductor (e.g., amorphous silicon or poly silicon), an organic semiconductor, or the like. The active layer130may include a source region, a drain region, and a channel region located between the source region and the drain region. The gate insulating layer150may be disposed on the active layer130. The gate insulating layer150may be disposed in the third area30and a part of the second area20on the lower substrate110. Alternatively, the gate insulating layer150may extend in a direction from the third area30to the second area20to make contact with a side surface of the filling layer650. As being in contact, elements may form an interface therebetween. In an embodiment, for example, the gate insulating layer150may cover the active layer130on the lower substrate110, and may have a substantially flat top surface without creating a step around the active layer130. In some embodiments, the gate insulating layer150may be disposed along a profile of the active layer130with a uniform thickness to cover the active layer130on the lower substrate110and therefore have a non-flat top surface. The gate insulating layer150may include a silicon compound, metal oxide, and the like. In an embodiment, for example, the gate insulating layer150may include silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), silicon oxycarbide (SiOxCy), silicon carbonitride (SiCxNy), aluminum oxide (AlOx), aluminum nitride (AlNx), tantalum oxide (TaOx), hafnium oxide (HfOx), zirconium oxide (ZrOx), titanium oxide (TiOx), and the like. In other embodiments, the gate insulating layer150may have a multilayer structure including a plurality of insulating layers. In an embodiment, for example, the insulating layers may have mutually different thicknesses, or may include mutually different materials. The gate electrode170may be disposed in the third area30on the gate insulating layer150. The gate electrode170may be disposed on a portion of the gate insulating layer150under which the active layer130is located (e.g., to overlap or correspond to the channel region of the active layer130). The gate electrode170may include a metal, an alloy, metal nitride, conductive metal oxide, a transparent conductive material, and the like. The gate electrode170may include gold (Au), silver (Ag), aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), palladium (Pd), magnesium (Mg), calcium (Ca), lithium (Li), chromium (Cr), tantalum (Ta), tungsten (W), copper (Cu), molybdenum (Mo), scandium (Sc), neodymium (Nd), iridium (Ir), an aluminum-containing alloy, aluminum nitride (AlNx), a silver-containing alloy, tungsten nitride (WNx), a copper-containing alloy, a molybdenum-containing alloy, titanium nitride (TiNx), chromium nitride (CrNx), tantalum nitride (TaNx), strontium ruthenium oxide (SrRuxOy), zinc oxide (ZnOx), indium tin oxide (“ITO”), tin oxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), indium zinc oxide (“IZO”), and the like. These may be used alone or in combination with each other. In other embodiments, the gate electrode170may have a multilayer structure including a plurality of metal layers. In an embodiment, for example, the metal layers may have mutually different thicknesses, or may include mutually different materials. The interlayer insulating layer190may be disposed on the gate electrode170. The interlayer insulating layer190may be disposed in the third area30and a part of the second area20on the gate insulating layer150. In other embodiments, the interlayer insulating layer190may extend in the direction from the third area30to the second area20to make contact with the side surface of the filling layer650. In an embodiment, for example, the interlayer insulating layer190may cover the gate electrode170on the gate insulating layer150, and may have a substantially flat top surface without creating a step around the gate electrode170. In some embodiments, the interlayer insulating layer190may be disposed along a profile of the gate electrode170with a uniform thickness to cover the gate electrode170on the gate insulating layer150and therefore have a non-flat top surface. The interlayer insulating layer190may include a silicon compound, metal oxide, and the like. In other embodiments, the interlayer insulating layer190may have a multilayer structure including a plurality of insulating layers. In an embodiment, for example, the insulating layers may have mutually different thicknesses, or may include mutually different materials. The source electrode210and the drain electrode230may be disposed in the third area30on the interlayer insulating layer190. The source electrode210may be connected to the source region of the active layer130at or through a contact hole provided or formed such as by removing first portions of the gate insulating layer150and the interlayer insulating layer190, and the drain electrode230may be connected to the drain region of the active layer130at or through a contact hole provided or formed such as by removing second portions of the gate insulating layer150and the interlayer insulating layer190. Each of the source electrode210and the drain electrode230may include a metal, an alloy, metal nitride, conductive metal oxide, a transparent conductive material, and the like. These may be used alone or in combination with each other. In other embodiments, each of the source electrode210and the drain electrode230may have a multilayer structure including a plurality of metal layers. In an embodiment, for example, the metal layers may have mutually different thicknesses, or may include mutually different materials. The planarization layer270may be disposed on the source electrode210and the drain electrode230. The planarization layer270may be disposed in the third area30and a part of the second area20on the interlayer insulating layer190. In other embodiments, the planarization layer270may extend in the direction from the third area30to the second area20to make contact with the side surface of the filling layer650. In an embodiment, for example, the planarization layer270may have a relatively large thickness. In this case, the planarization layer270may have a substantially flat top surface. In order to implement such a flat top surface of the planarization layer270, a planarization process may be additionally performed on a material layer which provides the planarization layer270. In some embodiments, the planarization layer270may be disposed along a profile of the source and drain electrodes210and230on the interlayer insulating layer190to therefore have a non-flat top surface. The planarization layer270may include or be formed of an organic insulating material or an inorganic insulating material. In the embodiments, the planarization layer270may include an organic insulating material. In an embodiment, for example, the planarization layer270may include a photoresist, a polyacryl-based resin, a polyimide-based resin, a polyamide-based resin, a siloxane-based resin, an acryl-based resin, an epoxy-based resin, and the like. Accordingly, the semiconductor element structure250including the active layer130, the gate insulating layer150, the gate electrode170, the interlayer insulating layer190, the source electrode210, the drain electrode230, and the planarization layer270may be provided. The lower electrode290may be disposed in the third area30on the planarization layer270. The lower electrode290may include a metal, an alloy, metal nitride, conductive metal oxide, a transparent conductive material, and the like. These may be used alone or in combination with each other. In other embodiments, the lower electrode290may have a multilayer structure including a plurality of metal layers. In an embodiment, for example, the metal layers may have mutually different thicknesses, or may include mutually different materials. The light emitting structure200may be electrically connected to the semiconductor element structure250at the lower electrode290, without being limited thereto. The semiconductor element structure250may control, drive, etc. the light emitting structure200to generate light, emit light, display an image, etc. The light emitting structure200and the semiconductor element structure250may together form a display element layer between the upper substrate450and the lower substrate110, without being limited thereto. The display element layer together with the upper substrate450and the lower substrate110may define a display panel or display substrate. The pixel defining layer310may be disposed in the third area30on the planarization layer270. In other embodiments, the pixel defining layer310may extend in the direction from the third area30to the second area20to make contact with a side surface of the filling layer650. The pixel defining layer310may cover both side portions of the lower electrode290, and may expose a part of a top surface of the lower electrode290to outside the pixel defining layer310. A solid portion of the pixel defining layer310may define a light emitting opening at which the lower electrode290is exposed to outside the pixel defining layer310. The pixel defining layer310may include or be formed of an organic insulating material or an inorganic insulating material. In the embodiments, the pixel defining layer310may include an organic insulating material. The light emitting layer330may be disposed on the lower electrode290. The light emitting layer330may have a multilayer structure including an organic light emission layer (“EML”), a hole injection layer (“HIL”), a hole transport layer (“HTL”), an electron transport layer (“ETL”), an electron injection layer (“EIL”), and the like. The organic light emission layer (“EML”) of the light emitting layer330may be formed by using at least one of light emitting materials for emitting different color lights (e.g., a red light, a green light, a blue light, etc.) according to sub-pixels. Alternatively, the organic light emission layer (“EML”) of the light emitting layer330may be formed by stacking a plurality of light emitting materials for generating different color lights such as a red light, a green light, and a blue light to emit white light as a whole. In this case, a color filter may be disposed on the light emitting layer330disposed on the lower electrode290. The color filter may include at least one of a red color filter, a green color filter, and a blue color filter. In some embodiments, the color filter may include a yellow color filter, a cyan color filter, and a magenta color filter. The color filter may include a photosensitive resin or a color photoresist. The upper electrode340may be disposed on the light emitting layer330. Alternatively, the upper electrode340may extend in the direction from the third area30to the second area20so as to be disposed in a part of the second area20. The upper electrode340may include a metal, an alloy, metal nitride, conductive metal oxide, a transparent conductive material, and the like. These may be used alone or in combination with each other. In other embodiments, the upper electrode340may have a multilayer structure including a plurality of metal layers. In an embodiment, for example, the metal layers may have mutually different thicknesses, or may include mutually different materials. Accordingly, the light emitting structure200including the lower electrode290, the pixel defining layer310, the light emitting layer330, and the upper electrode340may be provided. Referring again toFIGS.2and3, the upper substrate450may be disposed on the light emitting structure200, and the upper substrate450may face the lower substrate110with the filling layer650, the light blocking layer630, the light emitting structure200and the semiconductor element structure250therebetween. The upper substrate450may include substantially the same material as the lower substrate110. In an embodiment, for example, the upper substrate450may include a quartz substrate, a synthetic quartz substrate, a calcium fluoride substrate, a fluorine-doped quartz substrate, a soda lime glass substrate, a non-alkali glass substrate, and the like. In other embodiments, a thickness of the upper substrate450located in the first area10may be smaller than a thickness of the upper substrate450located in the second and third areas20and30. In this case, a part of a bottom surface of the upper substrate450located in the first area10may be etched to have a relatively thin thickness. That is, the upper substrate450may be recessed from the bottom surface which is closest to the lower substrate110, and in a direction away from the lower substrate110to provide a reduced thickness at the first area10. In addition, the upper substrate450located in the first area10may have a recessed shape in a direction from the upper substrate450to the lower substrate110. In an embodiment, for example, since the sensing structure380, the polarizing film layer430, and the like are not disposed in the first area10, the upper substrate450located in the first area10may be recessed in the above direction in a sealing process of bonding the lower substrate110to the upper substrate450. The filling layer650may be disposed in the first area10on the bottom surface of the upper substrate450. When the light incident from outside the display device100passes through a space between the upper substrate450and the lower substrate110in the first area10, the filling layer650disposed between the upper substrate450and the lower substrate110in the first area10reduces or effectively prevents wavefront distortion of the external light. In order to transmit the light, the filling layer650may be substantially transparent. In an embodiment, for example, the filling layer650may be formed of a material capable of transmitting light. The filling layer650may include an inorganic insulating material or an organic insulating material. The filling layer650may include transparent polyimide, a transparent photoresist, transparent acryl, transparent polyamide, transparent siloxane, transparent epoxy, and the like. In the embodiments, a refractive index of each of the lower substrate110, the upper substrate450, and the filling layer650may be about 1.4 to about 1.6. In an embodiment, the lower substrate110, the upper substrate450, and the filling layer650may have substantially the same refractive index. In other embodiments, when the filling layer650has a low viscosity, the filling layer650may extend in a direction from the first area10to the second area20so as to make contact with a side surface of the light blocking layer630or the semiconductor element structure250in the second area20or so as to be disposed between the light blocking layer630and the semiconductor element structure250which are spaced apart from each other along a thickness direction of the display device100. Referring toFIG.3, the filling layer650may be coplanar with each of the light blocking layer630and the semiconductor element structure250, without being limited thereto. The light blocking layer630may be disposed in the second area20on the bottom surface of the upper substrate450. The light blocking layer630may have or define an opening overlapping the first area10. In other words, in order to provide the light incident from outside of the display device100to the optical module700, the opening may expose the optical module700to outside the light blocking layer630on a plane of the display device100, and the light blocking layer630may not overlap the optical module700(e.g., may be spaced apart from the optical module700along the plane). That is, a planar shape of the opening of the light blocking layer630may be determined according to a profile of an outer periphery of the optical module700. In the embodiments, the light blocking layer630may not overlap the light emitting structure200in order not to reduce luminance of light emitted from the light emitting structure200. In other words, the light blocking layer630may be spaced apart from the light emitting structure200by an interval in consideration of a process margin in providing or forming the display device100. A boundary may be defined between the first area10and the second area20and between the second area20and the third area30. In other embodiments, a portion of the light blocking layer630such as an end or side surface thereof may be aligned with a side surface of the light emitting structure200that is adjacent to or closest to a boundary between the second area20and the third area30. In order to reduce or effectively prevent a part of light emitted from the light emitting layer330included in the light emitting structure200from penetrating into the optical module700, the light blocking layer630may be disposed between the optical module700and the light emitting structure200when viewed in a sectional view of the display device100. In other words, the light blocking layer630may not overlap the light emitting structure200so that the remaining light among the light emitted from the light emitting layer330may be emitted in a direction from the lower substrate110to the upper substrate450. However, a part of the light blocking layer630may overlap the semiconductor element structure250in the second area20. In order to absorb the light, the light blocking layer630may be opaque. In an embodiment, for example, the light blocking layer630may substantially have a black color. The light blocking layer630may include an organic material such as a photoresist, a polyacryl-based resin, a polyimide-based resin, a polyamide-based resin, a siloxane-based resin, an acryl-based resin, and an epoxy-based resin. In addition, the light blocking layer630may further include a light blocking material to absorb light. The light blocking material may include carbon black, titanium nitride oxide, titanium black, phenylene black, aniline black, cyanine black, nigrosine acid black, a black resin, and the like. In other embodiments, the light blocking layer630may be disposed over an entirety of the second area20on the bottom surface of the upper substrate450. In this case, the light blocking layer630may make contact with the filling layer650. The sensing structure380may be disposed in the third area30and a part of the second area20on the upper substrate450. In an embodiment, for example, the sensing structure380may be substantially transparent, and the light emitted from the light emitting structure200may pass through the sensing structure380in a direction from the lower substrate110to the cover window600. The sensing structure380may not overlap the optical module700. In other embodiments, a side surface of the sensing structure380that is adjacent to or closest to a boundary between the first area10and the second area20may be aligned with a side surface of the light blocking layer630that is adjacent to or closest to the boundary between the first area10and the second area20. As shown inFIG.5, each of the first sensing electrodes382may extend along a second direction D2, and the first sensing electrodes382may be spaced apart from each other along a first direction D1crossing the second direction D2. The second sensing electrodes384may be spaced apart from each other along the second direction D2and between two adjacent first sensing electrodes382among the first sensing electrodes382. The display device100and various layers and components thereof may be disposed in a plane defined by the first direction D1and the second direction D2which crosses the first direction D1. A thickness direction of the display device100and various layers and components thereof may be taken along a third direction (e.g., vertical inFIGS.3and4, for example) which crosses each of the first direction D1and the second direction D2. The sensing structure380may detect an external input such as a part of a user's body, an object, or the like located in front of the display device100(e.g., at the side of the cover window600) through the first and second sensing electrodes382and384. In the embodiments, the first and second sensing electrodes382and384may include a proximity sensor electrode configured to detect proximity with respect to the external input (e.g., the user or the object) located in front of the display device100, or a touch sensor electrode configured to detect a touch of the external input (e.g., the part of the user body). In an embodiment, for example, each of the first and second sensing electrodes382and384may include carbon nanotubes (“CNT”), transparent conductive oxide, indium tin oxide (“ITO”), indium gallium zinc oxide (“IGZO”), zinc oxide (“ZnO”), graphene, silver nanowires (“AgNW”), copper (Cu), chromium (Cr), and the like. An insulating layer may be disposed on the first sensing electrodes382and the second sensing electrodes384. The insulating layer may be disposed along a profile of the first and second sensing electrodes382and384with a uniform thickness to cover the first and second sensing electrodes382and384. The insulating layer may include an organic insulating material or an inorganic insulating material. In some embodiments, the insulating layer may have a multilayer structure including a plurality of insulating layers. In an embodiment, for example, the insulating layers may have mutually different thicknesses, or may include mutually different materials. The sensing connection electrodes386may be disposed on the insulating layer. That is, the first and second sensing electrodes382and384, the insulating layer and the sensing connection electrodes386may be disposed in order. The sensing connection electrodes386may electrically connect two second sensing electrodes384which are adjacent to each other along the first direction D1among the second sensing electrodes384, through a contact hole. In an embodiment, for example, the sensing connection electrodes386and the first and second sensing electrodes382and384may include the same material. In some embodiments, the sensing connection electrodes386may include a metal, an alloy, metal nitride, conductive metal oxide, a transparent conductive material, and the like. These may be used alone or in combination with each other. Accordingly, the sensing structure380including the first sensing electrodes382, the second sensing electrodes384, the insulating layer, and the sensing connection electrodes386may be provided. Referring again toFIGS.2and3, the polarizing film layer430may be disposed in the third area30and the second area20on the sensing structure380. The polarizing film layer430may overlap the light blocking layer630in the second area20, and may not overlap the optical module700. In some embodiments, an adhesive material layer may be disposed between the sensing structure380and the polarizing film layer430. The polarizing film layer430may include a linear polarizing film and a λ/4 phase retardation film. The λ/4 phase retardation film may be disposed on the sensing structure380. The λ/4 phase retardation film may convert a phase of light. In an embodiment, for example, the λ/4 phase retardation film may convert a vertically oscillating light or a horizontally oscillating light into a right-handed circularly polarized light or a left-handed circularly polarized light, and may convert the right-handed circularly polarized light or the left-handed circularly polarized light into the vertically oscillating light or the horizontally oscillating light. The λ/4 phase retardation film may include a birefringent film including a polymer, an alignment film formed of a liquid crystal polymer, a film including an alignment layer formed of a liquid crystal polymer, and the like. The linear polarizing film may be disposed on the λ/4 phase retardation film. The linear polarizing film may selectively transmit light. In an embodiment, for example, the linear polarizing film may transmit the vertically oscillating light or the horizontally oscillating light. In this case, the linear polarizing film may have a horizontal line pattern or a vertical line pattern. When the linear polarizing film includes the horizontal line pattern, the linear polarizing film may block the vertically oscillating light, and may transmit the horizontally oscillating light. When the linear polarizing film has the vertical line pattern, the linear polarizing film may block the horizontally oscillating light, and may transmit the vertically oscillating light. In an embodiment, for example, the linear polarizing film may include an iodine-based material, a dye-containing material, and a polyene-based material. In other embodiments, the polarizing film layer430may be disposed under the sensing structure380. In still other embodiments, a color filter may be additionally provided on the bottom surface of the upper substrate450, and the color filter may replace the polarizing film layer430. In other words, when the display device100further includes the color filter, the polarizing film layer430may not be provided. The cover window600may be disposed on the upper substrate450and the polarizing film layer430. In other words, the cover window600may be disposed facing the upper substrate450with the adhesive layer590, the polarizing film layer430and the sensing structure380therebetween. The cover window600may protect the polarizing film layer430, the sensing structure380, the light blocking layer630, the filling layer650, the light emitting structure200, the semiconductor element structure250, and the like. The cover window600may form an outer surface of the display device100, without being limited thereto. The cover window600may include a plurality of layers. In an embodiment, for example, the cover window600may include protective coating layers, base film layers, and the like formed of an organic material or an inorganic material. The protective coating layer may be disposed on the base film layer, and rigidity of the protective coating layer may be greater than rigidity of the base film layer in order to protect the base film layer. The base film layer may include polyimide, polyethylene terephthalate (“PET”), polyethylene naphthalene (“PEN”), polypropylene (“PP”), polycarbonate (“PC”), polystyrene (“PS”), polysulfone (“PSul”), polyethylene (“PE”), polyphthalamide (“PPA”), polyethersulfone (“PES”), polyarylate (“PAR”), polycarbonate oxide (“PCO”), modified polyphenylene oxide (“MPPO”), urethane, thermoplastic polyurethane (“TPU”), and the like. In addition, the protective coating layer may include an acryl-based material, an epoxy-based material, and the like. In other embodiments, the cover window600may have a single layer. For example, the cover window600may include ultra-thin glass (“UTG”), which is ultra-thin tempered glass. The adhesive layer590may be disposed between the cover window600and the upper substrate450. In other words, the adhesive layer590may be disposed to bond the cover window600to the upper substrate450. In an embodiment, for example, the adhesive layer590may include an optical clear adhesive (“OCA”) including acryl-based adhesives, silicon-based adhesives, urethane-based adhesives, rubber-based adhesives, vinyl ether-based adhesives, and the like, a pressure sensitive adhesive (“PSA”), an optical clear resin (“OCR”), and the like. A sealing member may be disposed between the lower substrate110and the upper substrate450at an outermost periphery of the display device100. The sealing member may make contact with the bottom surface of the upper substrate450which is closest to the lower substrate110and a top surface of the lower substrate110which is closest to the upper substrate450. In some embodiments, at least one insulating layer may be interposed between a bottom surface of the sealing member and the top surface of the lower substrate110. In the embodiments, the sealing member may include a non-conductive material. In an embodiment, for example, the sealing member may include a frit and the like. In addition, the sealing member may further include a photocurable material. In an embodiment, for example, the sealing member may include a combination of an organic material and a photocurable material, and the sealing member may be obtained by curing the combination by irradiating the combination with ultraviolet (“UV”) light, laser light, visible light, or the like. The photocurable material included in the sealing member may include an epoxy acrylate-based resin, a polyester acrylate-based resin, a urethane acrylate-based resin, a polybutadine acrylate-based resin, a silicon acrylate-based resin, an alkyl acrylate-based resin, and the like. In an embodiment, for example, the combination of the organic material and the photocurable material may be irradiated with the laser light. According to such irradiation of the laser light, the combination may be changed from a solid state to a liquid state, and the combination in the liquid state may be cured back to the solid state after a time. According to the state change of the combination, the upper substrate450may be coupled to the lower substrate110while elements therebetween are sealed with respect to the lower substrate110. Accordingly, the display device100including the lower substrate110, the semiconductor element structure250, the light emitting structure200, the upper substrate450, the filling layer650, the light blocking layer630, the optical module700, the sensing structure380, the polarizing film layer430, the adhesive layer590, and the cover window600may be provided. In a conventional display device, an air layer exists in a first area10between a lower substrate110and an upper substrate450without a filling layer650. When the air layer exists, since the lower and upper substrates110and450and the air layer have mutually different refractive indexes, wavefront distortion of external light (e.g., light incident from outside the conventional display device) may occur, so that an image obtained by function of an optical module700may be distorted. In order to solve the above problem, the filling layer650has been interposed in the first area10between the lower substrate110and the upper substrate450. The filling layer650may have a refractive index that is similar to a refractive index of each of the lower and upper substrates110and450. However, the filling layer650having the refractive index that is similar to the refractive index of each of the lower and upper substrates110and450increases an amount of light emitted from a light emitting layer330that is adjacent to a second area20and introduced into the optical module700. In this case, as an amount of the light introduced into the optical module700increases, more defects have been caused in a captured image (or a video image) of the conventional display device obtained through the optical module700. Since one or more embodiment of the display device100includes the light blocking layer630, light traveling in the direction from the third area30to the second area20among the light emitted from the light emitting layer330that is adjacent to the second area20may be blocked or absorbed by the light blocking layer630. In this case, an amount of light introduced into the optical module700may be relatively reduced by the light blocking function of the light blocking layer630in the second area20. Accordingly, defects in a captured image of the display device100obtained through the optical module700may be reduced. Although embodiments of the display device100have been described as being an organic light emitting diode display device including the light emitting structure200and the semiconductor element structure250as a display element layer, the invention is not limited thereto. In other embodiments, the display device100may include a liquid crystal display device (“LCD”), a field emission display device (“FED”), a plasma display device (“PDP”), an electrophoretic display device (“EPD”), and a quantum-dot organic light emitting display device (“QDOLED”) having a respective display element layer. FIG.6is a cross-sectional view showing an embodiment of a display device800, andFIGS.7and8are perspective views showing an embodiment of a lower substrate110included in the display device800ofFIG.6.FIG.9is a perspective view showing an embodiment of the lower substrate110and an optical module700included in the display device800ofFIG.6. For example,FIG.7is a perspective view showing a first surface S1of the lower substrate110, andFIG.8is a perspective view showing a second surface S2of the lower substrate110which is opposite to the first surface S1. A display device800illustrated inFIGS.6to9may have a configuration that is substantially identical or similar to the configuration of the display device100described with reference toFIGS.1to5except for a shape of the lower substrate110. InFIGS.6to9, redundant descriptions of components that are substantially identical or similar to the components described with reference toFIGS.1to5will be omitted. Referring toFIGS.6,7,8, and9, the display device800may include a lower substrate110, a semiconductor element structure250, a light emitting structure200, an upper substrate450, a filling layer650, a light blocking layer630, an optical module700, a sensing structure380, a polarizing film layer430, an adhesive layer590, a cover window600, and the like. Referring again toFIGS.7,8, and9, the lower substrate110including a transparent material may be provided. The lower substrate110may include a quartz substrate, a synthetic quartz substrate, a calcium fluoride substrate, a fluorine-doped quartz substrate, a soda lime glass substrate, a non-alkali glass substrate, and the like. In embodiments, the lower substrate110may include a through-opening910provided or formed in the first area10. An inner side surface of the lower substrate110may define the through-opening910. The optical module700may be disposed in the through-opening910. The optical module700in the through-opening910may extend further than an outer surface of the lower substrate110to dispose a portion of the optical module700outside of the lower substrate110. The optical module700may be exposed to outside the lower substrate110at the through-opening910. Referring toFIG.7, the through-opening910may be open at the first surface S1which is closest to the filling layer650. Referring toFIG.8, the through-opening910may be open at the second surface S2which is furthest from the filling layer650. In an embodiment, the through-opening910may extend through an entirety of the thickness of the lower substrate110to be open at both of opposing side surfaces thereof. In other embodiments, a dimension such as a diameter of the optical module700along the first direction D1and/or the second direction D2may be greater than a dimension such as a diameter of the through-opening910along a corresponding direction. In this case, the filling layer650may be filled in the through-opening910of the lower substrate110, and the optical module700may be disposed extended along on a bottom surface of the filling layer650and a bottom surface of the lower substrate110located in the second area20where such bottom surfaces are furthest from the upper substrate450. The filling layer650may be disposed between the upper substrate450and the optical module700. That is, the lower substrate110may be omitted from between the filling layer650and the optical module700, without being limited thereto. The filling layer650may be substantially transparent to transmit the light incident from outside the display device800and to the optical module700. In an embodiment, for example, the filling layer650may be formed of a material capable of transmitting light (e.g., light-transmitting filling layer). The filling layer650may include an inorganic insulating material or an organic insulating material. The filling layer650may include transparent polyimide, a transparent photoresist, transparent acryl, transparent polyamide, transparent siloxane, transparent epoxy, and the like. In the embodiments, the bottom surface of the filling layer650may make contact with the optical module700. That is, in the first area10, the filling layer650may form a boundary or interface with both the upper substrate450and the optical module700without being limited thereto. Embodiments disclosed herein may be applied to various electronic devices including a display device100. Embodiment disclosed herein may be applied to numerous electronic devices such as vehicle-display devices, ship-display devices, aircraft-display devices, portable communication devices, exhibition display devices, information transfer display devices, medical-display devices, etc. The foregoing is illustrative of embodiments and is not to be construed as limiting thereof. Although embodiments have been described, those skilled in the art will readily appreciate that many modifications are possible in the embodiments without materially departing from the novel teachings and advantages of the invention. Accordingly, all such modifications are intended to be included within the scope of the invention as defined in the claims. Therefore, it is to be understood that the foregoing is illustrative of various embodiments and is not to be construed as limited to the embodiments disclosed herein, and that modifications to the disclosed embodiments, as well as other embodiments, are intended to be included within the scope of the appended claims. | 51,505 |
11943993 | DETAILED DESCRIPTION OF THE INVENTION Definitions The term “crystalline A/M/X material” as used herein refers to a material with a crystal structure which comprises one or more A ions, one or more M ions, and one or more X ions. The A ions and M ions are typically cations. The X ions are typically anions. A/M/X materials typically do not comprise any further types of ions. The term “perovskite” as used herein refers to a material with a crystal structure related to that of CaTiO3or a material comprising a layer of material, which layer has a structure related to that of CaTiO3. The structure of CaTiO3can be represented by the formula ABX3, wherein A and B are cations of different sizes and X is an anion. In the unit cell, the A cations are at (0, 0, 0), the B cations are at (1/2, 1/2, 1/2) and the X anions are at (1/2, 1/2, 0). The A cation is usually larger than the B cation. The skilled person will appreciate that when A, B and X are varied, the different ion sizes may cause the structure of the perovskite material to distort away from the structure adopted by CaTiO3to a lower-symmetry distorted structure. The symmetry will also be lower if the material comprises a layer that has a structure related to that of CaTiO3. Materials comprising a layer of perovskite material are well known. For instance, the structure of materials adopting the K2NiF4-type structure comprises a layer of perovskite material. The skilled person will appreciate that a perovskite material can be represented by the formula [A][B][X]3, wherein [A] is at least one cation, [B] is at least one cation and [X] is at least one anion. When the perovskite comprise more than one A cation, the different A cations may distributed over the A sites in an ordered or disordered way. When the perovskite comprises more than one B cation, the different B cations may distributed over the B sites in an ordered or disordered way. When the perovskite comprise more than one X anion, the different X anions may distributed over the X sites in an ordered or disordered way. The symmetry of a perovskite comprising more than one A cation, more than one B cation or more than one X anion, will be lower than that of CaTiO3. For layered perovskites the stoichiometry can change between the A, B and X ions. As an example, the [A]2[B][X]4 structure can be adopted if the A cation has a too large an ionic radii to fit within the 3D perovskite structure. The term “perovskite” also includes A/M/X materials adopting a Ruddleson-Popper phase. Ruddleson-Popper phase refers to a perovskite with a mixture of layered and 3D components. Such perovskites can adopt the crystal structure, An-1A′2MnX3n+1, where A and A′ are different cations and n is an integer from 1 to 8, or from 2 to 6. The term “mixed 2D and 3D” perovskite is used to refer to a perovskite film within which there exists both regions, or domains, of AMX3and An-1A′2MnX3n+1perovskite phases. The term “metal halide perovskite” as used herein refers to a perovskite, the formula of which contains at least one metal cation and at least one halide anion. The term “hexahalometallate”, as used herein, refers to a compound which comprises an anion of the formula [MX6]n−wherein M is a metal atom, each X is independently a halide anion and n is an integer from 1 to 4. A hexahalometallate may have the structure A2MX6. The term “monocation”, as used herein, refers to any cation with a single positive charge, i.e. a cation of formula A+where A is any moiety, for instance a metal atom or an organic moiety. The term “dication”, as used herein, refers to any cation with a double positive charge, i.e. a cation of formula A2+where A is any moiety, for instance a metal atom or an organic moiety. The term “trication”, as used herein, refers to any cation with a double positive charge, i.e. a cation of formula A3+where A is any moiety, for instance a metal atom or an organic moiety. The term “tetracation”, as used herein, refers to any cation with a quadruple positive charge, i.e. a cation of formula A4+where A is any moiety, for instance a metal atom. The term “alkyl” as used herein refers to a linear or branched chain saturated hydrocarbon radical. An alkyl group may be a C1-20alkyl group, a C1-14alkyl group, a C1-10alkyl group, a C1-6alkyl group or a C1-4alkyl group. Examples of a C1-10alkyl group are methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl or decyl. Examples of C1-6alkyl groups are methyl, ethyl, propyl, butyl, pentyl or hexyl. Examples of C1-4alkyl groups are methyl, ethyl, i-propyl, n-propyl, t-butyl, s-butyl or n-butyl. If the term “alkyl” is used without a prefix specifying the number of carbons anywhere herein, it has from 1 to 6 carbons (and this also applies to any other organic group referred to herein). The term “cycloalkyl” as used herein refers to a saturated or partially unsaturated cyclic hydrocarbon radical. A cycloalkyl group may be a C3-10cycloalkyl group, a C3-8cycloalkyl group or a C3-6cycloalkyl group. Examples of a C3-8cycloalkyl group include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cyclohexenyl, cyclohex-1,3-dienyl, cycloheptyl and cyclooctyl. Examples of a C3-6cycloalkyl group include cyclopropyl, cyclobutyl, cyclopentyl and cyclohexyl. The term “alkenyl” as used herein refers to a linear or branched chain hydrocarbon radical comprising one or more double bonds. An alkenyl group may be a C2-20alkenyl group, a C2-14alkenyl group, a C2-10alkenyl group, a C2-6alkenyl group or a C2-4alkenyl group. Examples of a C2-10alkenyl group are ethenyl (vinyl), propenyl, butenyl, pentenyl, hexenyl, heptenyl, octenyl, nonenyl and decenyl. Examples of C2-6alkenyl groups are ethenyl, propenyl, butenyl, pentenyl and hexenyl. Examples of C2-4alkenyl groups are ethenyl, propenyl, n-propenyl, s-butenyl and n-butenyl. Alkenyl groups typically comprise one or two double bonds. The term “alkynyl” as used herein refers to a linear or branched chain hydrocarbon radical comprising one or more triple bonds. An alkynyl group may be a C2-20alkynyl group, a C2-14alkynyl group, a C2-10alkynyl group, a C2-6alkynyl group or a C2-4alkynyl group. Examples of a C2-10alkynyl group are ethynyl, propynyl, butynyl, pentynyl, hexynyl, heptynyl, octynyl, nonynyl and decynyl. Examples of C1-6alkynyl groups are ethynyl, propynyl, butynyl, pentynyl and hexynyl. Alkynyl groups typically comprise one or two triple bonds. The term “aryl” as used herein refers to a monocyclic, bicyclic or polycyclic aromatic ring which contains from 6 to 14 carbon atoms, typically from 6 to 10 carbon atoms, in the ring portion. Examples include phenyl, naphthyl, indenyl, indanyl, anthrecenyl and pyrenyl groups. The term “aryl group” as used herein includes heteroaryl groups. The term “heteroaryl” as used herein refers to monocyclic or bicyclic heteroaromatic rings which typically contains from six to ten atoms in the ring portion including one or more heteroatoms. A heteroaryl group is generally a 5- or 6-membered ring, containing at least one heteroatom selected from O, S, N, P, Se and Si. It may contain, for example, one, two or three heteroatoms. Examples of heteroaryl groups include pyridyl, pyrazinyl, pyrimidinyl, pyridazinyl, furanyl, thienyl, pyrazolidinyl, pyrrolyl, oxazolyl, oxadiazolyl, isoxazolyl, thiadiazolyl, thiazolyl, isothiazolyl, imidazolyl, pyrazolyl, quinolyl and isoquinolyl. The term “substituted” as used herein in the context of substituted organic groups refers to an organic group which bears one or more substituents selected from C1-10alkyl, aryl (as defined herein), cyano, amino, nitro, C1-10alkylamino, di(C1-10)alkylamino, arylamino, diarylamino, aryl(C1-10)alkylamino, amido, acylamido, hydroxy, oxo, halo, carboxy, ester, acyl, acyloxy, C1-10alkoxy, aryloxy, halo(C1-10)alkyl, sulfonic acid, thiol, C1-10alkylthio, arylthio, sulfonyl, phosphoric acid, phosphate ester, phosphonic acid and phosphonate ester. Examples of substituted alkyl groups include haloalkyl, perhaloalkyl, hydroxyalkyl, aminoalkyl, alkoxyalkyl and alkaryl groups. When a group is substituted, it may bear 1, 2 or 3 substituents. For instance, a substituted group may have 1 or 2 substitutents. The term “porous” as used herein refers to a material within which pores are arranged. Thus, for instance, in a porous scaffold material the pores are volumes within the scaffold where there is no scaffold material. The individual pores may be the same size or different sizes. The size of the pores is defined as the “pore size”. The limiting size of a pore, for most phenomena in which porous solids are involved, is that of its smallest dimension which, in the absence of any further precision, is referred to as the width of the pore (i.e. the width of a slit-shaped pore, the diameter of a cylindrical or spherical pore, etc.). To avoid a misleading change in scale when comparing cylindrical and slit-shaped pores, one should use the diameter of a cylindrical pore (rather than its length) as its “pore-width” (J. Rouquerol et al., “Recommendations for the Characterization of Porous Solids”, Pure & Appl. Chem., Vol. 66, No. 8, pp. 1739-1758, 1994). The following distinctions and definitions were adopted in previous IUPAC documents (K. S. W. Sing, et al, Pure and Appl. Chem., vol. 57, no 4, pp 603-919, 1985; and IUPAC “Manual on Catalyst Characterization”, J. Haber, Pure and Appl. Chem., vol 0.63, pp. 1227-1246, 1991): micropores have widths (i.e. pore sizes) smaller than 2 nm; Mesopores have widths (i.e. pore sizes) of from 2 nm to 50 nm; and Macropores have widths (i.e. pore sizes) of greater than 50 nm. In addition, nanopores may be considered to have widths (i.e. pore sizes) of less than 1 nm. Pores in a material may include “closed” pores as well as open pores. A closed pore is a pore in a material which is a non-connected cavity, i.e. a pore which is isolated within the material and not connected to any other pore and which cannot therefore be accessed by a fluid (e.g. a liquid, such as a solution) to which the material is exposed. An “open pore” on the other hand, would be accessible by such a fluid. The concepts of open and closed porosity are discussed in detail in J. Rouquerol et al., “Recommendations for the Characterization of Porous Solids”, Pure & Appl. Chem., Vol. 66, No. 8, pp. 1739-1758, 1994. Open porosity therefore refers to the fraction of the total volume of the porous material in which fluid flow could effectively take place. It therefore excludes closed pores. The term “open porosity” is interchangeable with the terms “connected porosity” and “effective porosity”, and in the art is commonly reduced simply to “porosity”. The term “without open porosity” as used herein therefore refers to a material with no effective open porosity. Thus, a material without open porosity typically has no macropores and no mesopores. A material without open porosity may comprise micropores and nanopores, however. Such micropores and nanopores are typically too small to have a negative effect on a material for which low porosity is desired. The term “compact layer” as used herein refers to a layer without mesoporosity or macroporosity. A compact layer may sometimes have microporosity or nanoporosity. The term “semiconductor device” as used herein refers to a device comprising a functional component which comprises a semiconductor material. This term may be understood to be synonymous with the term “semiconducting device”. Examples of semiconductor devices include a photovoltaic device, a solar cell, a photo detector, a photodiode, a photosensor, a chromogenic device, a transistor, a light-sensitive transistor, a phototransistor, a solid state triode, a battery, a battery electrode, a capacitor, a super-capacitor, a light-emitting device, a laser or a light-emitting diode. The term “optoelectronic device” as used herein refers to devices which source, control or detect light. Light is understood to include any electromagnetic radiation. Examples of optoelectronic devices include photovoltaic devices, photodiodes (including solar cells), phototransistors, photomultipliers, photoresistors and light emitting diodes. The term “consisting essentially of” refers to a composition comprising the components of which it consists essentially as well as other components, provided that the other components do not materially affect the essential characteristics of the composition. Typically, a composition consisting essentially of certain components will comprise greater than or equal to 95 wt % of those components or greater than or equal to 99 wt % of those components. Process The invention provides a process for producing a layer of a crystalline A/M/X material, which crystalline A/M/X material comprises a compound of formula [A]a[M]b[X]c, wherein: [M] comprises one or more first cations, which one or more first cations are metal or metalloid cations; [A] comprises one or more second cations; [X] comprises one or more halide anions; a is an integer from 1 to 6; b is an integer from 1 to 6; and c is an integer from 1 to 18, wherein the process comprises disposing on a substrate a precursor composition comprising: (a) a first precursor compound comprising a first cation (M), which first cation is a metal or metalloid cation; and (b) a solvent, and wherein the solvent comprises: (i) a non-polar organic solvent which is a hydrocarbon solvent, a chlorohydrocarbon solvent or an ether solvent; and (ii) a first organic amine comprising at least three carbon atoms. Non-Polar Organic Solvent The solvent comprises a non-polar organic solvent which is a hydrocarbon solvent, a chlorohydrocarbon solvent or an ether solvent. A non-polar organic solvent is a solvent which comprises organic molecules and which is non-polar. A non-polar solvent typically has a dipole moment of 2.0 or less. A hydrocarbon solvent is a solvent which comprises, or consists essentially of, a hydrocarbon compound. A hydrocarbon compound is a compound which consists of hydrogen atoms and carbon atoms. The hydrocarbon solvent may for instance be: an arene which is optionally substituted with one or more C1-6alkyl groups such as benzene, toluene, xylene (which may be o-xylene, m-xylene, p-xylene or a mixture thereof), cumene, ethylbenzene or trimethylbenzene; an alkane such as pentane, hexane or heptane; or a cycloalkane optionally substituted with one or more C1-6alkyl groups such as cylcopentane or cylcohexane. A chlorohydrocarbon solvent is a solvent which comprises, or consists essentially of, a chlorohydrocarbon compound. A chlorohydrocarbon compound is a compound which consists of hydrogen atoms, carbon atoms and one or more chlorine atoms. The hydrocarbon solvent may for instance be: a C1-6alkane substituted with one or more chlorine atoms such as dichloromethane, trichloromethane (chloroform) or tetrachloromethane; or an arene optionally substituted with one or more C1-6alkyl groups, which arene optionally substituted with one or more C1-6alkyl groups is substituted with one or more chlorine atoms, such as chlorobenzene or dichlorobenzene (which may be o-dichlorobenzene, m-dichlorobenzene, p-dichlorobenzene or a mixture thereof). An ether solvent is a solvent which comprises, or consists essentially, or an ether compound. An ether compound (as used herein) is a compound which consists of hydrogen atoms, carbon atoms and one or more oxygen atoms, each of which oxygen atoms is bonded to two separate carbon atoms. The ether solvent may for instance be a compound of formula R—O—R where each R is independently an unsubstituted C1-6alkyl group or an arene group optionally substituted with one or more unsubstituted C1-6alkyl groups, and where the two R groups are optionally bonded together to form a ring, optionally with the presence of a second —O— group between the two R groups. Examples of ether solvents include anisole (methoxybenzene), diethyl ether, ethyl methyl ether, ethyl tert-butyl ether, diisopropyl ether, tetrahydrofuran, tetrahydropyran and 1,4-dioxane. Typically, the non-polar organic solvent is toluene, benzene, xylene, chlorobenzene, dichlorobenzene, chloroform, anisole, hexane, pentane, cyclohexane or cyclopentane. Often, the solvent comprises a non-polar organic solvent which is a hydrocarbon solvent or a chlorohydrocarbon solvent. Preferably, the non-polar organic solvent is toluene or chlorobenzene. More preferably, the non-polar organic solvent is toluene. First Organic Amine The solvent comprises (i) the non-polar organic solvent and (ii) the first organic amine comprising at least three carbon atoms. The solvent typically comprises greater than 60% by weight of the non-polar organic solvent and the first organic amine relative to the total weight of the solvent, for instance greater than 70% by weight. The solvent may comprise greater than 40% by weight of the non-polar organic solvent, for instance greater than 60% by weight, relative to the total weight of the solvent. The first organic amine is typically an organic amine of formula RNH2where R is an organic group comprising at least three carbons. R typically has a molecular weight of less than 200 g/mol. R may be a hydrocarbyl group, i.e. a group which consists of hydrogen and carbon atoms. The first organic amine is typically a first alkylamine of formula RANH2or a first arylamine of formula ArNH2, wherein RAis a C3-26alkyl group optionally substituted with a phenyl group and Ar is a phenyl group optionally substituted with from one to three C1-6alkyl groups. The first arylamine is typically aniline. The first organic amine is preferably a first alkylamine which is a compound of formula RANH2, wherein RAis a C3-20alkyl group optionally substituted with a phenyl group. RAis typically an unsubstituted C3-10alkyl group, for instance n-propyl, isopropyl, n-butyl, pentyl or hexyl. The first alkylamine is typically propylamine, butylamine, pentylamine, hexylamine or phenylethylamine. Preferably, the first alkylamine is butylamine. The solvent typically comprises the non-polar organic solvent and the first organic amine (e.g. first alkylamine) in a volume ratio (non-polar organic solvent):(first organic amine) of from 40:1 to 1:2. In some cases, the volume ratio (non-polar organic solvent):(first organic amine) is around 1:1, for instance from 3:2 to 2:3. Preferably, the volume ratio (non-polar organic solvent):(first organic amine) is from 20:1 to 4:1, more preferably from 10:1 to 5:1. For instance, the volume of the first organic amine per ml of the non-polar organic solvent may be from 10 μl to 2000 μl, for instance from 50 μl to 300 μl. Many A/M/X materials, such as organic mixed halide perovskites, comprise alkylammonium ions such as methylammonium. As such, the known precursor compositions for A/M/X materials comprising alkylammonium ions typically comprise alkylammonium ions. For instance, a precursor solution may comprise a solution of an alkylammonium halide, for instance methylammonium iodide. However, it should be noted that such precursor solutions do not comprise a solvent which comprises an alkylamine or an organic amine. Rather, they comprise an alkylammonium ion which is a protonated alkylamine (or an organic ammonium ion which is a protonated organic amine). Furthermore, the alkylammonium ions in such known precursor solutions are accompanied by a molar equivalent of halide counterions. Thus, the precursor composition in the process of the invention comprises an organic amine such as an alkylamine, which organic amine is typically unprotonated. Of course, protonated alkylammonium ions may also be present if they are for instance part of the second precursor compound, but these are in addition to the solvent organic amine. Furthermore, the precursor composition comprising the solvent typically comprises a molar ratio of (organic amine):(halide ions derived from an alkylammonium halide compound) which is greater than 100:100, for instance greater than 105:100 or greater than 110:100. The molar ratio may be from 105:100 to 200:100. Typically, the solvent in the process of the invention is produced by adding the first organic amine to the non-polar organic solvent as the first organic amine in liquid form or solid form. Thus, the process may further comprise producing the solvent by adding the first organic amine to the non-polar organic solvent. For example, the process may further comprise adding the first alkylamine to the non-polar organic solvent. This is typically before the first (or second) precursor compound is added to the solvent to form the precursor composition. The solvent may be obtainable by mixing the non-polar organic solvent with the first organic amine in liquid form. First Precursor Compound The first precursor compound comprises a first cation (M), which first cation is a metal or metalloid cation. The first precursor compound typically further comprises a first anion. The first precursor compound may comprise further cations or anions. The first precursor compound may consist of one or more of the first cations and one or more of the first anions. Typically, the first anion is a halide anion, a nitrate anion, a thiocyanate anion (SCN−), a tetrafluoroborate anion (BF4−) or an organic anion. Preferably, the first anion is a halide anion or an organic anion. The first precursor compound may comprise two or more first anions, e.g. two or more halide anions. Typically, the organic anion is an anion of formula RCOO−, ROCOO−, RSO3−, ROP(O)(OH)O−or RO−, wherein R is H, substituted or unsubstituted C1-10alkyl, substituted or unsubstituted C2-10alkenyl, substituted or unsubstituted C2-10alkynyl, substituted or unsubstituted C3-10cycloalkyl, substituted or unsubstituted C3-10heterocyclyl or substituted or unsubstituted aryl. For instance R may be H, substituted or unsubstituted C1-10alkyl, substituted or unsubstituted C3-10cycloalkyl or substituted or unsubstituted aryl. Typically R is H substituted or unsubstituted C1-6alkyl or substituted or unsubstituted aryl. For instance, R may be H unsubstituted C1-6alkyl or unsubstituted aryl. Thus, R may be selected from H, methyl, ethyl, propyl, butyl, pentyl, hexyl, cyclopentyl, cyclohexyl and phenyl. Often, the one or more first anions are selected from halide anions and anions of formula RCOO−, wherein R is H or methyl. Typically, the first anion is F−, Cl−, Br−, I−, nitrate, formate or acetate. Preferably, the first anion is Cl−, Br−, I−or F−. More preferably, the first anion is Cl−, Br−or I−. The metal or metalloid cation may be a cation derived from any metal in groups 1 to 16 of the periodic table of the elements. The metal or metalloid cation may be any suitable metal or metalloid cation. The metal or metalloid cation may be a monocation, a dication, a trication or a tetracation. The metal or metalloid cation is typically a dication or a tetracation. Metalloids include the following elements: B, Si, Ge, As, Sb, Te and Po. Preferably, the first cation is a metal or metalloid dication, for instance a metal dication. Typically, the first cation which is a metal or metalloid cation is Ca2+, Sr2+, Cd2+, Cu2+, Ni2+, Mn2+, Fe2+, Co2+, Pd2+, Ge2+, Sn2+, Pb2+, Yb2+, Eu2+, Bi3+, Sb3+, Pd4+, W4+, Re4+, Os4+, Ir4+, Pt4+, Sn4+, Pb4+, Ge4+or Te4+. Preferably, the metal or metalloid cation is Cu2+, Pb2+, Ge2+or Sn2+. Often, the first cation is a metal or metalloid cation which is Pb2+or Sn2+. The first compound may comprise two or more first cations, for instance two or more cations selected from Cu2+, Ni2+, Mn2+, Fe2+, Co2+, Pd2+, Ge2+, Sn2+, Pb2+, Yb2+and Eu2+. Typically, the first precursor compound is a compound of formula MY2, MY3, or MY4, wherein M is said first cation which is a metal or metalloid dication, trication or tetracation, and Y is said first anion. Thus, the first precursor compound may be a compound of formula MY2, wherein M is Ca2+, Sr2+, Cd2+, Cu2+, Ni2+, Mn2+, Fe2+, Co2+, Pd2+, Ge2+, Sn2+, Pb2+, Yb2+or Eu2+and Y is F−, Cl−, Br−, I−, formate or acetate. Preferably M is Cu2+, Pb2+, Ge2+or Sn2+and Y is Cl−, Br−, I−, formate or acetate, preferably Cl−, Br−or I−. The first precursor compound is typically a compound of formula MX2. Preferably, the first precursor compound is a compound of formula SnI2, SnBr2, SnCl2, Pb(OAc)2, PbI2, PbBr2or PbCl2. More preferably, the first precursor compound is a compound of formula PbI2, PbBr2or PbCl2. Most preferably, the first precursor compound is PbI2. The first precursor compound may be a compound of formula MY3, wherein M is Bi3+or Sb3+and Y is F−, Cl−, Br−, I−, SCN−, BF4, formate or acetate. Preferably M is Bi3+and Y is Cl−, Br−or I−. In that case, the A/M/X material typically comprises a bismuth or antimony halogenometallate. The first precursor compound may be a compound of formula MY4, wherein M is Pd4+, W4+, Re4+, Os4+, Ir4+, Pt4+, Sn4+, Pb4+, Ge4+or Te4+and Y is F−, Cl−, Br−, I−, SCN−, BF4−, formate or acetate. Preferably M is Sn4+, Pb4+or Ge4+and Cl−, Br−or I−. In that case, the A/M/X material typically comprises a hexahalometallate. The concentration of the first precursor compound in the precursor composition is typically from 0.01 M to 2.0 M, for instance from 0.1 to 1.0 M. Second Precursor Compound The solvent system of the process of the invention is advantageously able to solubilise both a metal-containing first precursor compound and an organic material. It can also solubilise a second precursor compound which may be necessary to form the crystalline A/M/X material. Typically, the process further comprises disposing on the substrate a second precursor compound, which second precursor compound comprises a second cation (A) and a second anion (X). Preferably, the second precursor compound is a compound of formula [A][X] wherein: [A] comprises the one or more second cations; and [X] comprises one or more halide anions. Often, the precursor composition further comprises: (c) a second precursor compound, which second precursor compound comprises a second cation (A) and a second anion (X). The second precursor compound comprises a second anion (e.g. a halide anion) and a second cation. The second anion and second cation may be any suitable ions. For instance, the second cation may be a metal or metalloid cation or an organic cation. The second cation is typically a cation selected from Li+, Na+, K+, Rb+, Cs+and an organic cation. The second cation is often a monocation, for instance a metal or metalloid monocation or an organic monocation. Typically, wherein the second cation is Cs+or an organic cation. Typically, the second cation is an organic cation. The second cation may be any suitable organic cation. The organic cation may be a cation derived from an organic compound, for instance by protonation. The second cation may be an organic monocation or an organic dication. The second cation is typically an organic monocation. The second cation typically has a molecular weight of less than or equal to 500 gmol−1. Preferably, the second cation has a molecular weight of less than or equal to 250 gmol−1or less than or equal to 150 gmol−1. Often, the second cation is an organic cation comprising a nitrogen atom or a phosphorous atom. For instance, the organic cation may comprise a quaternary nitrogen atom. Typically, the second cation is Cs+, (NR1R2R3R4)+, (R1R2N═CR3R4)+, (R1R2N—C(R5)═NR3R4)+or (R1R2N—C(NR5R6)═NR3R4)+, and each of R1, R2, R3, R4, R5and R6is independently H, a substituted or unsubstituted C1-20alkyl group or a substituted or unsubstituted aryl group. R1, R2, R3, R4, R5and R6are typically independently H, a substituted or unsubstituted C1-6alkyl group or a substituted or unsubstituted aryl group. Preferably R1, R2, R3, R4, R5and R6are independently H, or an unsubstituted C1-6alkyl group. For instance, R1, R2, R3, R4, R5and R6may independently be H, methyl, ethyl or propyl. Preferably, the second cation is selected from (R1NH3)+, (NR24)+, and (H2N—C(R1)═NH2)+, wherein R1is H, a substituted or unsubstituted C1-20alkyl group or a substituted or unsubstituted aryl group, and each R2is independently H, or a substituted or unsubstituted C1-10alkyl group. Often, R1is H or an unsubstituted C1-6alkyl group and each R2is an unsubstituted C1-6alkyl group. For instance, R1may be H, methyl, ethyl or propyl and each R2may be methyl, ethyl and propyl. All R2may be the same and may be methyl, ethyl and propyl. For instance, the second cation may be selected from Cs+, (CH3NH3)+, (CH3CH2NH3)+, (CH3CH2CH2NH3)+, (N(CH3)4)+, (N(CH2CH3)4)+, (N(CH2CH2CH3)4)+, (H2N—C(H)═NH2)+and (H2N—C(CH3)═NH2)+. Preferably, the one or more second cations are selected from (CH3NH3)+, (H2N—C(H)═NH2)+and Cs+. The second anion is typically a halide anion. The second anion may be F−, Cl−, Br−or I−. Often, the second anion is Cl−, Br−or I−. Typically, the one or more first cations are selected from Ca2+, Sr2+, Cd2+, Cu2+, Ni2+, Mn2+, Fe2+, Co2+, Pd2+, Ge2+, Sn2+, Pb2+, Yb2+, Eu2+, Bi3+, Sb3+, Pd4+, W4+, Re4+, Os4+, Ir4+, Pt4+, Sn4+, Pb4+, Ge4+or Te4+, preferably wherein the one or more first cations are selected from Cu2+, Pb2+, Ge2+and Sn2+; and the one or more second cations are selected from cations of formula Cs+, (NR1R2R3R4)+, (R1R2N═CR3R4)+, (R1R2N—C(R5)═NR3R4)+and (R1R2N—C(NR5R6)═NR3R4)+, wherein each of R1, R2, R3, R4, R5and R6is independently H, a substituted or unsubstituted C1-20alkyl group or a substituted or unsubstituted aryl group, preferably wherein the one or more second cations are selected from (CH3NH3)+and (H2N—C(H)═NH2)+. The second precursor compound is a typically compound of formula AX. The second precursor compound may, for instance, be selected from (H3NR1)X, (NR1R2R3R4)X, (R1R2N═CR3R4)X, (R1R2N—C(R5)═NR3R4)X and (R1R2N—C(NR5R6)═NR3R4)X, wherein each of R1, R2, R3, R4, R5and R6is independently H, a substituted or unsubstituted C1-20alkyl group or a substituted or unsubstituted aryl group, and X is F−, Cl−, Br−, or I−. Preferably the second precursor compound is (H3NR1)X, wherein R1is an unsubstituted C1-6alkyl group and X is Cl−, Br−, or I−. The second precursor compound may, for example, be selected from CsF, CsCl, CsBr, CsI, NH4F, NH4Cl, NH4Br, NH4I, (CH3NH3)F, (CH3NH3)Cl, (CH3NH3)Br, (CH3NH3)I, (CH3CH2NH3)F, (CH3CH2NH3)Cl, (CH3CH2NH3)Br, (CH3CH2NH3)I, (N(CH3)4)F, (N(CH3)4)Cl, (N(CH3)4)Br, (N(CH3)4)I, (H2N—C(H)═NH2)F, (H2N—C(H)═NH2)Cl, (H2N—C(H)═NH2)Br and (H2N—C(H)═NH2)I. Typically, the second precursor compound is selected from (CH3NH3)Cl, (CH3NH3)Br, (CH3NH3)I, (CH3CH2NH3)Cl, (CH3CH2NH3)Br, (CH3CH2NH3)I, (N(CH3)4)Cl, (N(CH3)4)Br, (N(CH3)4)I, (H2N—C(H)═NH2)Cl, (H2N—C(H)═NH2)Br and (H2N—C(H)═NH2)I. Preferably, the second precursor compound is (H2N—C(H)═NH2)I, (H2N—C(H)═NH2)Br, (H2N—C(H)═NH2)Cl, (CH3NH3)I, (CH3NH3)Br or (CH3NH3)Cl. For instance, the second precursor compound may be (CH3NH3)I. If the crystalline A/M/X material is a mixed cation material, it may contain 2 or more different second precursor compounds. For instance, the precursor composition may comprise CsX and (H2N—C(H)═NH2)X′, where X and X′ are the same or different and are halide anions selected from Cl−, Br−and I−. Typically, the molar ratio (first precursor compound):(second precursor compound) in the precursor composition is from 1:2 to 2:1. Organic Material An advantage of the process of the present invention is that allows for simultaneous deposition of an A/M/X material and an organic material. Accordingly, the precursor composition typically further comprises: (d) an organic material. The organic material is typically an organic dielectric material, an organic semiconducting material, an organic polymer, a fullerene derivative, an organic reducing agent or an organic oxidizing agent. The organic semiconducting material is typically selected from poly(4-butylphenyldiphenylamine), poly(N,N′-bis-4-butylphenyl-N,N′-bisphenyl)benzidine (polyTPD), a poly(triarylamine) (PTAA), a spiro-bi-fluorene compound, spiro-OMeTAD, a polymer comprising thiophene, poly(3-hexyl thiophene), poly(3,4-ethylenedioxythiophene) (PEDOT), a rylene derivative, perylene, poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl) diphenylamine)] (TFB), poly(9,9-dioctylfluorenyl-2,7-diyl) (F8), poly(9-vinylcarbazole) (PVK), 4,4′-Bis(carbazol-9-yl)biphenyl (CBP), poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,7-diyl)] (F8BT), poly(3-hexylthiophene-2,5-diyl) (P3HT), phenyl-C61-butyric acid methyl ester (PCBM) and diphenylanthracene (DPA). The organic dielectric material is typically selected from poly(methylmethacrylate) (PMMA), polystyrene, poly(vinyl acetate) and ethylene-vinyl acetate (EVA). The organic reducing agent or an organic oxidizing agent is typically selected from 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), hexafluorotetra-cyanonaphthoquinodimethane (F6TCNNQ), a molybdenum compound, molybdenum tris(dithiolene), pentamethylcyclopentadienyl cyclopentadienyl rhodium dimer, decamethylcobaltocene (DMC), 3-dimethyl-2-phenyl-2,3-dihydro-1H-benzoimidazole (N-DMBI), pentamethyliridocene ((IrCp*Cp)2) and ruthenium pentamethylcyclopentadienyl mesitylene ((RuCp*mes)2). Preferably, the organic material is polymethyl methacrylate or phenyl-C61-butyric acid methyl ester (PCBM). More preferably, the organic material is phenyl-C61-butyric acid methyl ester. The concentration of the organic material in the precursor composition is typically less than 30 mg/ml, for instance less than 20 mg/ml. Second Alkylamine The presence of the first organic amine (e.g. the first alkylamine) creates a solvent system which is able to dissolve both a metal-containing first precursor compound and an organic material. However, it is often desirable to further include a second alkylamine. Organic amines such as alkylamines which are present in the solvent in the precursor composition are often incorporated in the structure of the crystalline A/M/X material. If this is undesirable, the invention also provides for exposure of the layer produced from the disposed precursor composition to a conversion compound as described below. Alternatively (or additionally), the precursor compound may comprise a second alkylamine, the presence of which in the as-produced A/M/X material is preferred. Accordingly, the solvent typically further comprises a second alkylamine. The second alkylamine is typically a compound of formula RBNH2, wherein RBan unsubstituted C1-8alkyl group. As mentioned above, the second alkylamine is often preferentially incorporated into the A/M/X material. According, [A] in the formula of the A/M/X material typically comprises a second cation which is a cation of formula (RBNH3)+and the second alkylamine is a compound of formula RBNH2, wherein each RBis the same group, which is a C1-8alkyl group. For instance, the second alkylamine may be methylamine or ethylamine. Preferably, the second cation is methylammonium and the second alkylamine is methylamine. When the solvent comprises a second alkylamine, the solvent is typically produced by adding the second alkylamine to the non-polar solvent before or after addition of the first alkylamine to the non-polar organic solvent. The second alkylamine may be added to the non-polar organic solvent by bubbling the second alkylamine through the non-polar solvent, for instance for from 1 to 30 minutes. The solvent may be obtainable by bubbling the second alkylamine through the non-polar solvent. The amount of second alkylamine in the solvent or precursor composition may vary depending on requirements. Typically, when present, the molar ratio of (the second alkylamine):(the first precursor compound) is from 1×10−7:1 to 0.5:1, optionally from 1×10−6:1 to 0.1:1. In some cases, the amount of the second alkylamine may be relatively small. For instance, the molar ratio of (the second alkylamine):(the first precursor compound) may be less than 1×10−4: 1. In this case, the molar ratio may for instance be from 1×10−7:1. The solvent may accordingly comprise toluene as the non-polar organic solvent, butylamine as the first organic amine and methylamine as the second alkylamine. For instance, the solvent may be obtainable by bubbling methylamine gas through the non-polar organic solvent for from 1 to 30 minutes and then mixing in butylamine, for instance in a volume of from 50 μl to 300 μl per ml of the non-polar organic solvent. Crystalline A/M/X Material The crystalline A/M/X material may be any suitable crystalline A/M/X material. The crystalline compound may comprise a compound having the following formula [A]a[M]b[X]cwherein: [A] is one or more second cations; [M] is one or more first cations which are metal or metalloid cations selected from Pd4+, W4+, Re4+, Os4+, Ir4+, Pt4+, Sn4+, Pb4+, Ge4+, Te4+, Bi3+, Sb3+, Sn2+, Pb2+, Cu2+, Ge2+and Ni2+; [X] is one or more second anions selected from Cl−, Br−, I−, O2−, S2−, Se2−, and Te2−; a is an integer from 1 to 3; b is an integer from 1 to 3; and c is an integer from 1 to 8. If [A] is one cation (A), [M] is two cations (M1and M2), and [X] is one anion (X), the crystalline material may comprise a compound of formula Aa(M1,M2)bXc. [A] may represent one, two or more A ions. If [A], [M] or [X] is more than one ion, those ions may be present in any proportion. For instance, Aa(M1,M2)bXcincludes all compounds of formula AaM1byM2b(1-y)Xcwherein y is between 0 and 1, for instance from 0.05 to 0.95. Such materials may be referred to as mixed ion materials. Typically, the crystalline A/M/X material comprises a perovskite or a hexahalometallate. Preferably the crystalline material comprises a perovskite. The crystalline material often comprises a metal halide perovskite. The crystalline material often comprises an organometal halide perovskite. The crystalline A/M/X material may comprise a perovskite with a mixture of 3D and 2D phases, and which comprises a mixture of small and large organic cations, such as butylammonium and methylammonium, or butylammonium and formamidinium. Preferably, the crystalline A/M/X material comprises a perovskite compound of formula [A][M][X]3, wherein: [A] comprises the one or more second cations; [M] comprises the one or more first cations; and [X] comprises the one or more halide anion. The one or more first cations and one or more second cations may be as described herein. For instance, the crystalline A/M/X material may comprises a perovskite compound of formula [A][M][X]3, wherein: [A] comprises one or more second cations selected from Cs+, (CH3NH3)+, (H2N—C(H)═NH2)+and (CH3(CH2)3NH3)+; [M] comprises the one or more first cations selected from Pb2+and Sn2+; and [X] comprises the one or more halide anion. In one embodiment, the perovskite is a perovskite compound of the formula (IA): AM[X]3(IA) wherein: A is an organic monocation; M is a metal cation; and [X] is two or more different halide anions. [X] may be two or three different halide anions. In one embodiment, the perovskite is a perovskite compound of formula: Csz(H2N—C(H)═NH2)(1-z)[B]X3yX′3(1-y) wherein: [B] is the one or more first cations; X is a first halide anion selected from I−, Br−, Cl−and F−; X′ is a second halide anion which is different from the first halide anion and is selected from I−, Br−, Cl−and F−; z is from 0.01 to 0.99; and y is from 0.01 to 0.99. For instance, the perovskite may be a compound of formula Csz(H2N—C(H)═NH2)(1-z)PbBr3yI3 (1-y). The crystalline A/M/X material may comprise: a perovskite compound of formula CH3NH3PbI3, CH3NH3PbBr3, CH3NH3PbCl3, CH3NH3PbF3, CH3NH3PbBrxI3, CH3NH3PbBrxCl3, CH3NH3PbIxCl3, CH3NH3PbI3Clx, CH3NH3SnI3, CH3NH3SnBr3, CH3NH3SnCl3, CH3NH3SnF3, CH3NH3SnBrI2, CH3NH3SnBrxI3-x, CH3NH3SnBrxCl3-x, CH3NH3SnF3-xBrx, CH3NH3SnIxBr3-x, CH3NH3SnIxCl3-x, CH3NH3SnF3-xIx, CH3NH3SnClxBr3-x, CH3NH3SnI3-xClxand CH3NH3SnF3-xClx, CH3NH3CuI3, CH3NH3CuBr3, CH3NH3CuCl3, CH3NH3CuF3, CH3NH3CuBrI2, CH3NH3CuBrxI3-x, CH3NH3CuBrxCl3, CH3NH3CuF3-xBrx, CH3NH3CuIxBr3-x, CH3NH3CuIxCl3-x, CH3NH3CuF3-xIx, CH3NH3CuClxBr3-x, CH3NH3CuI3-xClx, or CH3NH3CuF3-xClxwhere x is from 0 to 3; a perovskite compound of formula (H2N—C(H)═NH2)PbI3, (H2N—C(H)═NH2)PbBr3, (H2N—C(H)═NH2)(H2N—C(H)═NH2)PbCl3, (H2N—C(H)═NH2)PbF3, (H2N—C(H)═NH2)PbBrxI3-x, (H2N—C(H)═NH2)PbBrxCl3-x, (H2N—C(H)═NH2)PbIxBr3-x, (H2N—C(H)═NH2)PbIxCl3-x, (H2N—C(H)═NH2)PbClxBr3-x, (H2N—C(H)═NH2)PbI3-xClx, (H2N—C(H)═NH2)SnI3, (H2N—C(H)═NH2)SnBr3, (H2N—C(H)═NH2)SnCl3, (H2N—C(H)═NH2)SnF3, (H2N—C(H)═NH2)SnBrI2, (H2N—C(H)═NH2)SnBrxI3-x, (H2N—C(H)═NH2)SnBrxCl3-x, (H2N—C(H)═NH2)SnF3-xBrx, (H2N—C(H)═NH2)SnIxBr3-x, (H2N—C(H)═NH2)SnIxCl(H2N—C(H)═NH2)SnF3-xIx, (H2N—C(H)═NH2)SnClxBr3-x, (H2N—C(H)═NH2)SnI3-xClx, (H2N—C(H)═NH2)SnF3-xClx, (H2N—C(H)═NH2)CuI3, (H2N—C(H)═NH2)CuBr3, (H2N—C(H)═NH2)CuCl3, (H2N—C(H)═NH2)CuF3, (H2N—C(H)═NH2)CuBrI2, (H2N—C(H)═NH2)CuBrxI3-x, (H2N—C(H)═NH2)CuBrxCl3-x, (H2N—C(H)═NH2)CuF3-xBrx, (H2N—C(H)═NH2)CuIxBr3-x, (H2N—C(H)═NH2)CuIxCl3-x, (H2N—C(H)═NH2)CuF3-xIx, (H2N—C(H)═NH2)CuClxBr3-x, (H2N—C(H)═NH2)CuI3-xClx, or (H2N—C(H)═NH2)CuF3-xCl x where x is from 0 to 3; or a perovskite compound of formula (H2N—C(H)═NH2)yCs1-yPbI3, (H2N—C(H)═NH2)yCs1-yPbBr3, (H2N—C(H)═NH2)yCs1-yPbCl3, (H2N—C(H)═NH2)yCs1-yPbF3, (H2N—C(H)═NH2)yCs1-yPbBrxI3-x, (H2N—C(H)═NH2)yCs1-yPbBrxCl3-x, (H2N—C(H)═NH2)yCs1-yPbIxBr3-x, (H2N—C(H)═NH2)yCs1-yPbIxCl3-x, (H2N—C(H)═NH2)yCs1-yPbClxBr3-x, (H2N—C(H)═NH2)yCs1-yPbI3-xClx, (H2N—C(H)═NH2)yCs1-ySnI3, (H2N—C(H)═NH2)yCs1-ySnBr3, (H2N—C(H)NH2)yCs1-ySnCl3, (H2N—C(H)NH2)yCs1-ySnF3, (H2N—C(H)NH2)yCs1-ySnBrI2, (H2N—C(H)═NH2)yCs1-ySnBrxI3-x, (H2N—C(H)═NH2)yCs1-ySnBrxCl3-x, (H2N—C(H)═NH2)yCs1-ySnF3-xBrx, (H2N—C(H)═NH2)yCs1-ySnIxBr3-x, (H2N—C(H)═NH2)yCs1-ySnIxCl3-x, (H2N—C(H)═NH2)yCs1-ySnF3-xIx, (H2N—C(H)═NH2)yCs1-ySnClxBr3-x, (H2N—C(H)═NH2)yCs1-ySnI3-xClx, (H2N—C(H)═NH2)yCs1-ySnF3-xClx, (H2N—C(H)═NH2)yCs1-yCuI3, (H2N—C(H)═NH2)yCs1-yCuBr3, (H2N—C(H)═NH2)yCs1-yCuCl3, (H2N—C(H)═NH2)yCs1-yCuF3, (H2N—C(H)═NH2)yCs1-yCuBrI2, (H2N—C(H)═NH2)yCs1-yCuBrxI3-x, (H2N—C(H)═NH2)yCs1-yCuBrxCl3-x, (H2N—C(H)═NH2)yCs1-yCuF3-xBrx, (H2N—C(H)═NH2)yCs1-yCuIxBr3-x, (H2N—C(H)═NH2)yCs1-yCuIxCl3-x, (H2N—C(H)═NH2)yCs1-yCuF3-xIx, (H2N—C(H)═NH2)yCs1-yCuClxBr3-x, (H2N—C(H)═NH2)yCs1-yCuI3-xClx, or (H2N—C(H)═NH2)yCs1-yCuF3-xClxwhere x is from 0 to 3 and y is from 0.1 to 0.9. Typically, the crystalline A/M/X material is a perovskite of formula CH3NH3PbI3, CH3NH3PbBr3, CH3NH3PbCl3, CH3NH3PbBrxCl3-x, CH3NH3PbBr3-x, CH3NH3PbIxCl3-xwhere x is from 0 to 3, for instance from 0.1 to 2.99. The crystalline A/M/X material may comprise a perovskite compound of An-1A′2Mn[X]3n+1wherein: A and A′ are different second cations; M is a first cation; [X] is at least one halide anion and n is an integer from 1 to 8, for instance from 2 to 6. n may be 3 or 4. A may for instance be methylammonium (CH3NH3)+. A′ may for instance be butylammonium (CH3(CH2)3NH3)+. M may for instance be Pb2+. X may for instance be one or more of I−, Br−or Cl−. The crystalline A/M/X material may for instance alternatively comprise a hexahalometallate of formula (III): [A]2[M][X]6(III) wherein: [A] is the one or more second cations; [M] is the one or more first cations which are one or more metal or metalloid tetracations; and [X] is at least one halide anion. For instance, the hexahalometallate compound may be Cs2SnI6, Cs2SnBr6, Cs2SnBr6-yIy, Cs2SnCl6-y, Cs2SnCl6-yBry, (CH3NH3)2SnI6, (CH3NH3)2SnBr6, (CH3NH3)2SnBr6-yIy, (CH3NH3)2SnCl6-yIy, (CH3NH3)2SnCl6-yBry, (H2N—C(H)═NH2)2SnI6, (H2N—C(H)NH2)2SnBr6, (H2N—C(H)NH2)2SnBr6-yIy, (H2N—C(H)═NH2)2SnCl6-yIyor (H2N—C(H)═NH2)2SnCl6-yBrywherein y is from 0.01 to 5.99. The crystalline A/M/X material may comprise a double perovskite compound of formula of formula [A]2[BI][BIII][X]6wherein: [A] is the one or more first monocations; [BI] is one or more second monocations; [BIII] is one or more trications; and [X] is the one or more halide anions. BIand BIIImay be as defined above for M. [BI] may be selected from Li+, Na+, K+, Rb+, Cs+, Cu+, Ag+, Au+and He, preferably from Cu+, Ag+and Au+. [BIII] may be selected from Bi3+, Sb3+, Cr3+, Fe3+, Co3+, Ga3+, As3+, Ru3+, Rh3+, In3+, Ir3+and Au3+, preferably from Bi3+and Sb3+. The double perovskite may be a compound of formula Cs2AgBiX6, (H2N—C(H)═NH2)2AgBiX6, (H2N—C(H)═NH2)2AuBiX6, (CH3NH3)2AgBiX6or (CH3NH3)2AuBiX6where X is I−, Br−or Cl−. The double perovskite may be a compound of formula Cs2AgBiBr6. Process Conditions The final concentration of the precursor compounds in the precursor composition comprising the precursor compounds and solvent is typically from 10 to 60 wt %. The concentration may be from 20 to 50 wt % or from 15 to 35 wt %, for instance about 30 wt %. Percentages are relative to the total weight of the precursor composition. Typically, the precursor composition is disposed on the substrate by solution phase deposition, for instance graveur coating, slot dye coating, screen printing, ink jet printing, doctor blade coating, spray coating or spin-coating. Typically the precursor composition is disposed on the substrate by spin-coating the precursor composition on the substrate. Usually, the layer of the crystalline A/M/X material has a thickness of from 5 to 3000 nm. Typically, the layer has a thickness of from 20 to 1000 nm, for instance from 100 to 1000 nm or from 300 to 1000 nm. Preferably, the layer has a thickness of greater than or equal to 100 nm, for instance from 100 to 3000 nm or from 100 to 700 nm. Typically, the process further comprises removing the solvent to form the layer comprising the perovskite compound. Removing the solvent may comprise heating the substrate, or allowing the solvent to evaporate. Often, it is desirable to anneal the layer of the crystalline A/M/X material or the layer of the disposed precursor composition. Typically, the process further comprises heating the substrate with the precursor composition disposed thereon. Preferably, the substrate is heated to a temperature of from 50° C. to 400° C., for instance from 50° C. to 200° C. More preferably, the substrate is heated to a temperature of from 50° C. to 200° C. for a time of from 1 to 100 minutes. The process may comprise disposing on a substrate a precursor composition comprising: (a) PbI2; (b) a solvent which comprises toluene and butylamine; and (c) (CH3NH3)I. Preferably, the process comprises disposing on a substrate a precursor composition comprising: (a) PbI2; (b) a solvent which comprises toluene, butylamine and methylamine; and (c) (CH3NH3)I. The substrate typically comprises a layer of a first electrode material. The first electrode material may comprise a metal (for instance silver, gold, aluminium or tungsten) or a transparent conducting oxide (for instance fluorine doped tin oxide (FTO) or indium doped tin oxide (ITO)). Typically, the first electrode comprise a transparent conducting oxide. The substrate may, for instance, comprise a layer of a first electrode material and a layer of an n-type semiconductor. Often, the substrate comprises a layer of a transparent conducting oxide, for instance FTO, and a compact layer of an n-type semiconductor, for instance TiO2. In some embodiments, the substrate comprises a layer of a porous scaffold material. The layer of a porous scaffold is usually in contact with a layer of an n-type or p-type semiconductor material, for instance a compact layer of an n-type semiconductor or a compact layer of a p-type semiconductor. The scaffold material is typically mesoporous or macroporous. The scaffold material may aid charge transport from the crystalline material to an adjacent region. The scaffold material may also aid formation of the layer of the crystalline material during deposition. The porous scaffold material is typically infiltrated by the crystalline material after deposition. Typically, the porous scaffold material comprises a dielectric material or a charge-transporting material. The scaffold material may be a dielectric scaffold material. The scaffold material may be a charge-transporting scaffold material. The porous scaffold material may be an electron-transporting material or a hole-transporting scaffold material. n-type semiconductors are examples of electron-transporting materials. p-type semiconductors are examples of hole-transporting scaffold materials. Preferably, the porous scaffold material is a dielectric scaffold material or a electron-transporting scaffold material (e.g. an n-type scaffold material). The porous scaffold material may be a charge-transporting scaffold material (e.g. an electron-transporting material such as titania, or alternatively a hole transporting material) or a dielectric material, such as alumina. The term “dielectric material”, as used herein, refers to material which is an electrical insulator or a very poor conductor of electric current. The term dielectric therefore excludes semiconducting materials such as titania. The term dielectric, as used herein, typically refers to materials having a band gap of equal to or greater than 4.0 eV. (The band gap of titania is about 3.2 eV.) The skilled person of course is readily able to measure the band gap of a material by using well-known procedures which do not require undue experimentation. For instance, the band gap of a material can be estimated by constructing a photovoltaic diode or solar cell from the material and determining the photovoltaic action spectrum. The monochromatic photon energy at which the photocurrent starts to be generated by the diode can be taken as the band gap of the material; such a method was used by Barkhouse et al., Prog. Photovolt: Res. Appl. 2012; 20:6-11. References herein to the band gap of a material mean the band gap as measured by this method, i.e. the band gap as determined by recording the photovoltaic action spectrum of a photovoltaic diode or solar cell constructed from the material and observing the monochromatic photon energy at which significant photocurrent starts to be generated. The thickness of the layer of the porous scaffold is typically from 5 nm to 400 nm. For instance, the thickness of the layer of the porous scaffold may be from 10 nm to 50 nm. The substrate may, for instance, comprise a layer of a first electrode material, a layer of an n-type semiconductor, and a layer of a dielectric scaffold material. The substrate may therefore comprise a layer of a transparent conducting oxide, a compact layer of TiO2and a porous layer of Al2O3. Often, the substrate comprises a layer of a first electrode material and a layer of an n-type semiconductor or a layer of a p-type semiconductor. Typically, the substrate comprises a layer of a first electrode material and optionally one or more additional layers that are each selected from: a layer of an n-type semiconductor, a layer of a p-type semiconductor, and a layer of insulating material. Typically, a surface of the substrate on which the precursor composition is disposed comprises one or more of a first electrode material, a layer of an n-type semiconductor, a layer of a p-type semiconductor, and a layer of insulating material. The p-type semiconductor may comprise an inorganic or an organic p-type semiconductor. Typically, the p-type semiconductor comprises an organic p-type semiconductor. Suitable p-type semiconductors may be selected from polymeric or molecular hole transporters. The p-type semiconductor may comprise spiro-OMeTAD (2,2′,7,7′-tetrakis-(N,N-di-p-methoxyphenylamine)9,9′-spirobifluorene)), P3HT (poly(3-hexylthiophene)), PCPDTBT (Poly[2,1,3-benzothiadiazole-4,7-diyl[4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b:3,4-b′]dithiophene-2,6-diyl]]) or PVK (poly(N-vinylcarbazole)). The p-type semiconductor may comprise carbon nanotubes. Usually, the p-type semiconductor is selected from spiro-OMeTAD, P3HT, PCPDTBT and PVK. Preferably, the p-type semiconductor is spiro-OMeTAD. Additional Process Steps The process may comprise an additional step in which any of the first organic amine incorporated into the layer produced by disposing the precursor compound on the substrate is removed by exposing the disposed layer to a conversion compound (i.e. a compound which converts the as-disposed layer into the desired crystalline A/M/X material). Accordingly, the process typically further comprises a step of exposing the substrate with the precursor composition disposed thereon to a conversion compound, which conversion compound is a compound of formula RCNH2or (RCNH3)X wherein RCis a C1-4alkyl group and X is a halide anion. For instance, the conversion compound may be selected from methylamine, ethylamine, propylamine, a methylammonium halide, an ethylammonium halide or propylammonium halide (where the halide is selected from iodide, bromide and chloride). Alternatively, the conversion compound may be a formamidinium halide, for instance (H2N—C(H)═NH2)Cl, (H2N—C(H)═NH2)Br or (H2N—C(H)═NH2)I. The conversion compound typically corresponds to the compound obtained by deprotonating the second cation (i.e. the A cation) which is present in the crystalline A/M/X compound. For instance, if the A/M/X compound comprises methylammonium as one of the one or more second cations, the conversion compound may be methylamine. Preferably, the conversion compound is methylamine or a methylammonium halide. Exposing the substrate with the precursor composition disposed thereon to a conversion compound typically comprises exposing the substrate with the precursor composition disposed thereon to vapour comprising the conversion compound. The process may further comprise a step of annealing the as-disposed precursor composition between deposition of the precursor compound on the substrate and exposure of the substrate to the conversion compound. The annealing may comprise heating the substrate with the precursor composition disposed thereon at a temperature of from 50° C. to 200° C. for a time of from 1 to 100 minutes. Exposing the substrate with the precursor composition disposed thereon to vapour comprising the conversion compound typically comprises exposing the substrate with the precursor composition disposed thereon to vapour comprising the conversion compound at a pressure of at least 500 mbar. The exposure may be conducted at atmospheric pressure. The substrate may be exposed to the conversion compound for at least 1 second, for instance from 5 to 600 seconds. Typically the substrate is exposed to the conversion compound at ambient temperature (for instance from 15 to 25° C.). Process for Producing a Device The invention also provides a process for producing a semiconductor device comprising a layer of a crystalline A/M/X material, which process comprises producing said layer of a crystalline A/M/X material by a process as defined herein. The process typically further comprises disposing on the layer of a crystalline A/M/X material a layer of a p-type semiconductor or a layer of a n-type semiconductor. Often, the process typically comprises disposing on the layer of a crystalline material a layer of a p-type semiconductor. The n-type or p-type semiconductor may be as defined herein. For instance, the p-type semiconductor may be an organic p-type semiconductor. Suitable p-type semiconductors may be selected from polymeric or molecular hole transporters. Preferably, the p-type semiconductor is spiro-OMeTAD. The layer of a p-type semiconductor or a layer of a n-type semiconductor is typically disposed on the layer of the crystalline material by solution-processing, for instance by disposing a composition comprising a solvent and the n-type or p-type semiconductor. The solvent may be selected from polar solvents, for instance chlorobenzene or acetonitrile. The thickness of the layer of the p-type semiconductor or the layer of the n-type semiconductor is typically from 50 nm to 500 nm. The process typically further comprises disposing on the layer of the p-type semiconductor or n-type semiconductor a layer of a second electrode material. The second electrode material may be as defined above for the first electrode material. Typically, the second electrode material comprises, or consists essentially of, a metal. Examples of metals which the second electrode material may comprise, or consist essentially of, include silver, gold, copper, aluminium, platinum, palladium, or tungsten. The second electrode may be disposed by vacuum evaporation. The thickness of the layer of a second electrode material is typically from 5 nm to 100 nm. Typically, the semiconductor device is an optoelectronic device, a photovoltaic device, a solar cell, a photo detector, a photodiode, a photosensor (photodetector), a radiation detector, a chromogenic device, a transistor, a diode, a light-sensitive transistor, a phototransistor, a solid state triode, a battery, a battery electrode, a capacitor, a super-capacitor, a light-emitting device, a light-emitting diode or a laser. The semiconductor device is typically an optoelectronic device. Examples of optoelectronic devices include photovoltaic devices, photodiodes (including solar cells), phototransistors, photomultipliers, photoresistors, and light emitting devices. Preferably, the semiconductor device is a photovoltaic device. Composition The present invention also provides a composition comprising: (i) a compound of formula MXn, wherein: M is wherein: M is Ca2+, Sr2+, Cd2+, Cu2+, Ni2+, Mn2+, Fe2+, Co2+, Pd2+, Ge2+, Sn2+, Pb2+, Yb2+, Eu2+, B3+, Sb3+, Pd4+, W4+, Re4+, Os4+, Ir4+, Pt4+, Sn4+, Pb4+, Ge4+or Te4+, preferably Cu2+, Pb2+, Ge2+or Sn2+; X is I−, Br−, Cl−or F−; and n is 2, 3 or 4; (ii) a compound of formula AX, wherein A is (R1NH3)+, (NR24)+and (H2N—C(R1)═NH2)+, wherein R1is H or an unsubstituted C1-6alkyl group and each R2is an unsubstituted C1-6alkyl group, and X is I−, Br−, Cl−or F−; (iii) a non-polar organic solvent which is a hydrocarbon solvent, a chlorohydrocarbon solvent or an ether solvent; and (iv) a first organic amine comprising at least three carbon atoms. Such compositions are particularly useful in the process of the invention. The non-polar organic solvent and the first organic amine may be as defined herein. Preferably, the composition comprises: (i) PbI2, PbBr2or PbCl2; (ii) (H2N—C(H)═NH2)I, (H2N—C(H)═NH2)Br, (H2N—C(H)═NH2)Cl, (CH3NH3)I, (CH3NH3)Br or (CH3NH3)Cl; (iii) toluene or chlorobenzene; and (iv) butylamine. More preferably, the composition comprises: (i) PbI2; (ii) (CH3NH3)I or (H2N—C(H)═NH2)I; (iii) toluene; (iv) butylamine; and (v) methylamine. The relative amounts of the components may be as define above for the precursor composition. EXAMPLES Example 1 Solvent Comprising Toluene and Butylamine A solvent comprising a 50:50 v/v mixture of butylamine/toluene was prepared. PbI2and methylammonium iodide were dissolved in the mixed solvent to form a precursor composition. The precursor composition was then used to form perovskite films.FIG.1shows current-voltage characteristics of a device comprising a perovskite film deposited from the mixed butylamine/toluene solvent.FIG.2shows the absorption of a perovskite film deposited from the butylamine/toluene solvent. From the absorption spectrum, it is inferred that the perovskite deposited from this butylamine/toluene solvent is of the crystal structure MAn-1BA2PbnI3n+1. Example 2 Solvent Comprising Toluene, Butylamine and Methylamine Preparation of the Precursor Solution Methylammonium iodide (Dyesol) and PbI2(TCI Chemicals) were added to 3 ml of toluene, such that a 1M solution was formed. The vial was sonicated until a dark grey suspension was obtained. A solution of methylamine (MA) in ethanol (Sigma Aldrich, 33 wt %) was placed into an aerator which was kept in an ice bath. A carrier gas (N2) was then bubbled into the solution, thus degassing the solution of MA. The MA gas which was produced was then passed through a drying tube filled with a dessicant (Drierite and CaO), before it was bubbled directly into the toluene (Sigma Aldrich) which contained the perovskite precursors (methylammonium iodide and PbI2). The gas was bubbled into the dark grey dispersion for 5 minutes after which 500 μl of butylamine (Sigma Aldrich) was added to the dispersion. Upon addition of the butylamine a clear, yellow solution was obtained, after which toluene was added to the solution such that the final molarity of the perovskite solution was 0.5M. PCBM was then added to the precursor solution in the desired quantity, and the solution was stirred at room temperature until the PCBM was completely dissolved. Deposition of Perovskite Films The perovskite films were deposited onto the desired substrate by spin coating at 2000 rpm for 45 seconds, resulting in the crystallisation of a yellow film during spin coating. The films were then annealed at 100° C. for 60 min, after which it was allowed to naturally cool down to room temperature. When the substrates were completely cool, the films were held in methylamine vapour for 10 seconds, causing a bleaching of the perovskite films. The films were then removed from the vapour and immediately placed on a hotplate after which they were annealed for 5 minutes at 100° C., resulting in the formation of a CH3NH3PbI3perovskite film. Results and Discussion The addition of butylamine to the perovskite precursors not only causes dissolution of the material, but also results in the incorporation of butylammonium into the perovskite structure. To illustrate this, a standard 0.5 M solution of CH3NH3PbI3in the known ACN/MA (acetonitrile/methylamine) compound solvent was used. By adding different volumes of butylamine to a full perovskite precursor solution, it is possible to tune the composition and structure of the perovskite from the 3D CH3NH3PbI3to the 2D (CH3(CH2)3NH3)2PbI4.FIG.3shows the X-ray diffractograms and photographs of the films produced. From the XRD patterns it can be seen that even with the addition of a very small amount of BA (10 μl/ml) a small peak appears at approximately 11°, indicative of the formation of an impurity phase. Interestingly, when no MA is added to the dispersion, and BA/ACN is used as the compound solvent, the XRD pattern of the resulting film matches exactly with that of the 2D perovskite (CH3(CH2)3NH3)2PbI4. This suggests that in solutions where amines are used as solvents, there is an equilibrium between the solvent and the alkylammonium cations, whereby the solvent molecules can be protonated and thus incorporated into the crystal structure of the perovskite material. While alkylamines which are either miscible with or soluble in non-polar organic solvents can be used to create compound solvents for the perovskite precursors, the resulting layered perovskite structure is not always desirable for photovoltaic applications. Exposure of a perovskite film to methylamine (MA) vapour can not only lead to improved crystallinity and morphology, but can also cause changes to the composition of the material. For example, a film of formamidinium lead iodide which is exposed to MA vapour can be predominantly converted to CH3NH3PbI3. This approach was used to obtain high quality CH3NH3PbI3films from the BA/toluene compound solvent. To minimise the amount of excess BA in the perovskite solution, the perovskite/toluene dispersion was first saturated by bubbling MA into it for 10 mins, after which BA is added to the dispersion until the perovskite is dissolved. The films deposited from this precursor ink are then spin coated and annealed for 30 mins before being exposed to methylamine vapour, and then annealed for a further 5 minutes at 100° C. The XRD patterns and the absorption spectra of the films before and after methylamine exposure are shown inFIG.4. It can be seen from the X-ray diffractogram shown inFIG.4(a)that the when the films are processed directly from the MA:BA/toluene solvent mixture, as with the BA/ACN solvent mixture, the layered (CH3(CH2)3NH3)2PbI4perovskite material is formed. This is confirmed by the absorption spectra shown inFIG.4(c), showing the characteristic excitonic absorption displayed by this compound. However, after exposure to MA vapour the film is transformed into the 3D CH3NH3PbI3displaying the characteristic XRD pattern and absorption onset at 780 nm. Having shown that by using this sequential process it is possible to successfully fabricate a film of CH3NH3PbI3films from a solvent which is conventional considered an anti-solvent, the utility of this solvent system for the co-deposition of the perovskite material and organic molecules such as C60PCBM was investigated. While PCBM is most frequently used as an extraction layer in perovskite based solar cells, studies have also shown indications that PCBM passivates defects in the perovskite layer. Given that PCBM has appreciable solubility in solvents such as toluene and chlorobenzene, the co-dissolution approach was used to investigate the impact of the PCBM on film formation of the perovskite. Scanning electron microscope images of the films produced are shown inFIG.5. From the SEM images shown inFIG.5, it can be seen that the inclusion of PCBM into the precursor solution does not appear to negatively impact film formation until concentrations of approximately 20 mg/ml. In fact, at lower concentrations it appears to result in the growth of larger crystal domains reaching a maximum at approximately 5 mg/ml. At 20 mg/ml phase separation of the two materials starts to be seen, where there appears to be regions of crystalline perovskite materials surrounded by PCBM. At 25 mg/ml and 30 mg/ml, the fine grain structure of the perovskite is no longer visible in the film, presumably due to being covered by a layer of organic material. However, at 40 mg/ml, the appearance of very large clusters of perovskite crystallites and an uneven distribution of material across the surface of the film is observed. It must be noted, however, that this concentration of 40 mg/ml is nearing the solubility limit for PCBM in toluene and at this concentration the precursor solution quickly becomes turbid when left to stand. The optoelectronic quality of these films was then investigated, with and without PCBM added to the precursor solution.FIG.6shows time-resolved photoluminescence decays of the CH3NH3PbI3films deposited from the MA:BA/toluene compound solvent with the specified amounts of PCBM added to the precursor solution. By fitting the PL decays lifetimes of approximately 350 ns were found for the control film with no PCBM added to the precursor solution. This value is in good agreement with literature values for CH3NH3PbI3values which have been reported in literature. With the addition of small amounts of PCBM, an increase in the PL lifetimes of the films was found, which reaches a maximum at 5 mg/ml of PCBM, yielding a lifetime of approximately 900 ns. This increase in PL lifetime is in agreement with literature results which have suggested that at low concentrations, PCBM can passivate grain boundaries and interfaces in perovskite films and devices. With increasing concentrations of PCBM, a decrease in the lifetime can be seen with significant quenching occurring at a 20 mg/ml. Looking at these results in the context of the changes in the crystal size and morphology of the films, it can be inferred that at PCBM concentrations higher than 15 mg/ml, there is a near complete phase separation of the materials, with a PCBM layer forming on top of the perovskite layer. As PCBM and C60have been shown to be extremely efficient extraction layers for perovskite solar cells, it is conceivable that at high concentrations when a near complete layer of PCBM coats the perovskite, the PL lifetime is quenched as electrons are extracted from the perovskite. While not necessarily improving the quality of the perovskite material itself, this is a promising result as this method can potentially be used to deposit both the perovskite and the electron transporting layer at once. Having assessed the optoelectronic quality of the films via optical measurements, the films were incorporated into solar cells. Here the following device structure was used: FTO/SnO2/CH3NH3PbI3/spiro-OMeTAD/Ag. The performance statistics over 4 batches of devices are shown inFIG.7. Most notably, an increase in the VOCof the devices where PCBM has been added to the precursor solution is seen, with the maximum VOCbeing achieved at between 5 mg/ml and 10 mg/ml of added PCBM. When the PCBM loading is increased, a sharp drop in all performance parameters in the device is observed. These results can be correlated with the SEM images of equivalent perovskite films, where the film morphology appears to change with higher PCBM loadings. From the SEM images, it appears that at higher loadings (>15 mg/ml), more PCBM is present at the surface of the film. In the current n-i-p device architecture, this would result in direct contact with the spiro-OMeTAD layer, resulting in increased recombination at this interface, and hence an overall decrease in device performance, which is indeed what is observed in these devices. However, at PCBM loadings of 5 mg/ml where we observe the largest grain sizes and most improved PL lifetimes, highly efficient devices with scanned efficiencies of up to 19.6% with a steady-state efficiency of 18.9% can be achieved. The current-voltage characteristics of the control and test devices are given inFIG.8. | 69,442 |
11943994 | DETAILED DESCRIPTION OF THE EMBODIMENTS The present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the disclosure are shown. This disclosure may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. The same reference numbers indicate the same components throughout the specification. It will be understood that, although the terms “first,” “second,” etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For instance, a first element discussed below could be termed a second element without departing from the teachings of the present disclosure. Similarly, the second element could also be termed the first element. Each of the features of the various embodiments of the present disclosure may be combined or combined with each other, in part or in whole, and technically various interlocking and driving are possible. Each embodiment may be implemented independently of each other or may be implemented together in an association. Hereinafter, embodiments of the present disclosure will be described with reference to the attached drawings. FIG.1is a perspective view of a display device according to an embodiment, andFIG.2is a plan view illustrating an example of a display panel according to an embodiment. In the present specification, “upper”, “top”, or “upper surface” refers to one side in an upward direction, that is, a third direction DR3with respect to a display panel100, and “lower”, “bottom”, or “lower surface” refers to the other side in downward direction, that is, the third direction DR3with respect to the display panel100. A display device10, which is a device for displaying a moving image or a still image, may be used as a display screen of various products such as televisions, notebooks, monitors, billboards, internet of things (IOTs) as well as portable electronic appliances such as mobile phones, smart phones, tablet personal computers (tablet PCs), smart watches, watch phones, mobile communication terminals, electronic notebooks, electronic books, portable multimedia players (PMPs), navigators, and ultra mobile PCs (UMPCs). The display device10may be any one of an organic light emitting display device, a liquid crystal display device, a plasma display device, a field emission display device, an electrophoretic display device, an electrowetting display device, a quantum dot light emitting display device, and a micro light emitting display device. Hereinafter, the display device10will be mainly described as an organic light emitting display device, but the present disclosure is not limited thereto. Referring toFIGS.1and2, the display device10includes a display panel100, a display driver200, and a circuit board300. The display panel100may have a rectangular planar shape having short sides in the first direction DR1and long sides in the second direction DR2. The corner where the short side in the first direction DR1meets the long side in the second DR2may be formed to have a round shape having a predetermined curvature or have a right-angled shape. The planar shape of the display panel100is not limited to a rectangular shape, and may be formed in another polygonal shape, circular shape, or elliptical shape. The display panel100may be formed to be flat, but the present disclosure is not limited thereto. For example, the display panel100may include a curved portion formed at the left and right ends thereof and having a constant curvature or a variable curvature. In addition, the display panel100may be flexible to be bent, warped, folded, or rolled. The display panel100may include a display area DA where sub-pixels SP are formed to display an image, and a non-display area NDA which is a peripheral area of the display area DA. The display area DA may be provided with scan lines SL, light emission lines EL, data lines DL, and first driving voltage lines VDDL as well as sub-pixels SP. The scan lines SL and the light emission lines EL are formed in parallel to each other in the first direction DR1, and the data lines DL may be formed in parallel to each other in the second direction DR2crossing the first direction DR1. The first driving voltage lines VDDL may be formed in parallel to each other in the second direction DR2in the display area DA. The first driving voltage lines VDDL formed in parallel to each other in the second direction DR2in the display area DA may be connected to each other in the non-display area NDA. Each of the sub pixels SP may be connected to at least one of the scan lines SL, any one of the data lines DL, at least one of the light emission lines EL, and any one of the first driving voltage lines VDDL. For convenience of explanation, although it is illustrated inFIG.2that each of the sub-pixels SP is connected to two scan lines SL, one data line DL, one light emission line EL, and a first driving voltage line VDDL, the present disclosure is not limited thereto. For example, each of the sub-pixels SP may be connected to three scan lines SL, not two scan lines SL. Each of the sub-pixels SP may include a driving transistor, at least one switching transistor, a light emitting element, and a capacitor. The driving transistor may emit light by supplying a driving current to the light emitting element according to a data voltage applied to a gate electrode. The driving transistor and the at least one switching transistor may be thin film transistors (TFT). The light emitting element may emit light according to the driving current of the driving transistor. The light emitting element may be an organic light emitting diode including an anode electrode, an organic light emitting layer, and a cathode electrode. The capacitor may serve to maintain the data voltage applied to the gate electrode of the driving transistor for a predetermined period. The non-display area NDA may cover an area from the outside of the display area DA to the edge of the display panel100. The non-display area NDA may be provided with a scan driver410for applying scan signals to the scan lines SL, and pads DP connected to the data lines DL. Since the circuit board300is attached onto the pads DP, the pads DP may be disposed at one edge of the display panel100, for example, at the lower edge of the display panel100. The scan driver410may be connected to the display driver200through a plurality of first scan control lines SCL1. The scan driver410may receive a scan control signal from the pads DP through the plurality of first scan control lines SCL1. The scan driver410may generate scan signals according to the scan control signal, and sequentially output the scan signals to the scan lines SL. Sub-pixels SP to which data voltages are to be supplied are selected by scan signals of the scan driver410, and data voltages are supplied to the selected sub-pixels SP. A light emission control driver420may be connected to the display driver200through a plurality of second scan control lines SCL2. The light emission control driver420may receive a light emission control signal from the pads DP through the plurality of second scan control lines SCL2. The light emission control driver420may generate light emission signals according to the light emission control signal, and sequentially output the light emission signals to the light emission lines EL. Although it is illustrated inFIG.2that the scan driver410is disposed left side of the display area DA, and the light emission control driver420is disposed right side of the display area DA, the present disclosure is not limited thereto. For example, both of the scan driver410and the light emission control driver420may be disposed left side of the display area DA simultaneously, or may be disposed right side of the display area DA simultaneously. The display driver200receives digital video data and timing signals from an external source. The display driver200converts digital video data into analog positive/negative data voltages and supplies them to the data lines DL. The display driver200generates and supplies a scan control signal for controlling an operation timing of the scan driver410through the first scan control lines SCL1. The display driver200generates and supplies a light emission control signal for controlling an operation timing of the light emission control driver420through the second scan control lines SCL2. The display driver200may supply a first driving voltage to the first driving voltage line VDDL. The display driver200may be formed as an integrated circuit (IC) and attached onto the circuit board300by a COF (chip on film) method. Alternatively, the display driver200may be directly attached onto the display panel100by a chip on glass (COG) method, a chip on plastic (COP) method, or an ultrasonic bonding method. The circuit board300may be attached onto the pads DP using an anisotropic conductive film. Thus, the lead lines of the circuit board300may be electrically connected to the pads DP. The circuit board300may be a flexible printed circuit board, a printed circuit board, or a flexible film such as a chip on film. FIG.3is a circuit diagram illustrating an example of the sub-pixel ofFIG.2. InFIG.3, a circuit of one sub-pixel SP of the display device may include an organic light emitting diode180, a plurality of transistors T1, T2, T3, T4, T5, T6, and T7, and a capacitor C1. In the circuit of one sub-pixel, a data line Dj, a first scan line Sa, a second scan line Sb, a third scan line Sc, a light emission line Ek, a first driving voltage line VDDL, a second driving voltage line VSSL, and an initialization voltage line VIL may be connected to each other. The organic light emitting diode180may include an anode electrode and a cathode electrode. The capacitor C1may include a first electrode and a second electrode. The plurality of transistors may include first to seventh transistors T1, T2, T3, T4, T5, T6, and T7. Each of the transistors T1, T2, T3, T4, T5, T6, and T7may include a gate electrode, a first electrode, and a second electrode. One of the first electrode and second electrode of each of the transistors T1, T2, T3, T4, T5, T6, and T7may be a source electrode, and the other thereof may be a drain electrode. Each of the transistors T1, T2, T3, T4, T5, T6, and T7may be a thin film transistor. Each of the transistors T1, T2, T3, T4, T5, T6, and T7may be one of a PMOS transistor and an NMOS transistor. In an embodiment, the first transistor T1as a driving transistor, the second transistor T2as a data transfer transistor, the fifth transistor T5as a first light emission control transistor, the sixth transistor T6as a second light emission control transistor, and the seventh transistor T7as a second initialization transistor are PMOS transistors. In contrast, the third transistor T3as a compensation transistor and the fourth transistor T4as a first initialization transistor are NMOS transistors. PMOS transistors and NMOS transistors have different characteristics. In this case, since the third transistor T3and the fourth transistor T4are formed as NMOS transistors having relatively excellent turn-off characteristics, leakage of a driving current during the emission period of the organic light emitting diode OLED may be reduced. Hereinafter, each of the components will be described in detail. The gate electrode of the first transistor T1is connected to the first electrode of the capacitor C1. The first electrode of the first transistor T1is connected to a terminal of the first driving voltage line VDDL via the sixth transistor T6. The second electrode of the first transistor T1is connected to the anode electrode of the organic light emitting diode180through the fifth transistor T5. The first transistor T1receives data signal DATA according to the switching operation of the second transistor T2and supplies a driving current to the organic light emitting diode180. The gate electrode of the second transistor T2is connected to a terminal of the second scan line Sb. The first electrode of the second transistor T2is connected to a terminal of the data line Dj. The second electrode of the second transistor T2is connected to the first electrode of the first transistor T1and is connected to the terminal of the first driving voltage line VDDL via the sixth transistor T6. The second transistor T2is turned on according to a signal applied to the second scan line Sb, and performs a switching operation of transmitting the data signal applied through the data line Dj to the first electrode of the first transistor T1. The gate electrode of the third transistor T3is connected to a terminal of the first scan line Sa. The first electrode of the third transistor T3is connected to the second electrode of the first transistor T1and the anode electrode of the organic light emitting diode180via the fifth transistor T5. The second electrode of the third transistor T3is connected to the first electrode of the capacitor C1, the first electrode of the fourth transistor T4, and the gate electrode of the first transistor T1. The third transistor T3is turned on according to a signal of the first scan line Sa to connect the gate electrode and second electrode of the first transistor T1to each other to diode-connect the first transistor T1. Accordingly, a voltage difference is generated between the first electrode and gate electrode of the first transistor T1by the threshold voltage of the first transistor T1, and a data signal compensated for the threshold voltage may be supplied to the gate electrode of the first transistor T1, thereby compensating for a threshold voltage deviation of the first transistor T. The gate electrode of the fourth transistor T4is connected to a terminal of the third scan line Sc. The second electrode of the fourth transistor T4is connected to a terminal of the initialization voltage line VIL. The first electrode of the fourth transistor T4is connected to the first electrode of the capacitor C1, the second electrode of the third transistor T3, and the gate electrode of the first transistor T1. The fourth transistor T4is turned on according to the signal of the third scan line Sc and transmits the initialization voltage signal of the initialization voltage line VIL to the gate electrode of the first transistor T1to perform an operation of initializing the voltage of the gate electrode of the first transistor T1. The gate electrode of the fifth transistor T5is connected to a terminal of the light emission line Ek. The first electrode of the fifth transistor T5is connected to the second electrode of the first transistor T1and the first electrode of the third transistor T3. The second electrode of the sixth transistor T6is connected to the anode electrode of the organic light emitting diode180. The gate electrode of the sixth transistor T6is connected to a terminal of the light emission line Ek. The first electrode of the sixth transistor T6is connected to a terminal of the first driving voltage line VDDL. The second electrode of the sixth transistor T6is connected to the first electrode of the first transistor T1and the second electrode of the second transistor T2. The fifth transistor T5and the sixth transistor T6are simultaneously turned on according to the light emission control signal of the light emission line Ek, and accordingly, a driving current flows through the organic light emitting diode180. The gate electrode of the seventh transistor T7is connected to a terminal of the second scan line Sb. The first electrode of the seventh transistor T7is connected to the anode electrode of the organic light emitting diode180. The second electrode of the seventh transistor T7is connected to a terminal of the initialization voltage line VIL. The seventh transistor T7is turned on according to the light emission control signal of the light emission line Ek to initialize the anode electrode of the organic light emitting diode180. In this embodiment, a case where the gate electrode of the seventh transistor T7receives a signal from the second scan line Sb is exemplified, but as another embodiment, the pixel circuit may be configured such that the gate electrode of the seventh transistor T7receives the light emission control signal from the light emission line Ek. That is, the gate electrode of the seventh transistor T7may be connected to the light emission liner Ek. The second electrode of the capacitor C1is connected to the terminal of the first driving voltage line VDDL. The first electrode of the capacitor C1is connected to the gate electrode of the first transistor T1, the second electrode of the third transistor T3, and the first electrode of the fourth transistor T4. The cathode electrode of the organic light emitting diode180is connected to a terminal of the second driving voltage line VSSL. The organic light emitting diode180receives a driving current from the first transistor T1and emits light to display an image. Each of the first to seventh transistors T1, T2, T3, T4, T5, T6, and T7may include a semiconductor layer. Some of the first to seventh transistors T1, T2, T3, T4, T5, T6, and T7may include semiconductor layers made of polycrystalline silicon, and others of the first to seventh transistors T1, T2, T3, T4, T5, T6, and T7may include semiconductor layers made of oxide. For example, the semiconductor layers of the first to seventh transistors T1, T2, T3, T4, T5, T6, T7are made of polycrystalline silicon, or the semiconductor layers of the first and fifth to seventh transistors T1, T5, T6, and T7of the first to seventh transistors T1, T2, T3, T4, T5, T6, and T7are made of polycrystalline silicon, and the semiconductor layers of the third and fourth transistors T3and T4of the first to seventh transistors T1, T2, T3, T4, T5, T6, and T7are made of oxide. For example, the semiconductor layer of the driving transistor may include polycrystalline silicon, and the semiconductor layer of the switching transistor may include oxide. The semiconductor layer of the switching transistor may include a first channel region overlapping the gate electrode of the switching transistor, a first drain region located at one side of the first channel region, and a first source region located at the other side of the first channel region. The semiconductor layer of the driving transistor may include a second channel region overlapping the gate electrode of the driving transistor, a second drain region located at one side of the second channel region, and a second source region located at the other side of the second channel region. Meanwhile, the above-described display device10may include a flexible substrate such as a plastic substrate in order to implement the display device10that can be warped or bent. For example, the display device10may include a polyimide substrate. The polyimide substrate is a flexible substrate, and may be used as a substrate of various flexible display devices. However, in the polyimide substrate, a charging phenomenon in which charges are collected on the surface thereof may occur, and electrical characteristics of a thin film transistor adjacent to the substrate may be deteriorated due to this charge phenomenon. For example, when a silicon oxide layer and an amorphous silicon layer are disposed between multi-layered polyimide substrates, electric charges may be generated when the amorphous silicon layer is irradiated with light. When the transistor is driven, charges are trapped between the amorphous silicon layer and the polyimide substrate, thereby causing a shift in gate voltage of the transistor. Accordingly, optical afterimages of the display device may occur. Accordingly, although it is possible to consider the omission of the amorphous silicon layer interposed to improve adhesion force, in the case of the silicon oxide layer disposed between the polyimide substrates, the adhesive between the organic material and the inorganic material is low, so that the polyimide substrate may be lifted. Hereinafter, a display device capable of improving a charging phenomenon of a substrate to prevent the deterioration of characteristics of a thin film transistor and to improve adhesion force will be described. FIG.4is a cross-sectional view of a display device according to an embodiment. Referring toFIG.4, a display device10according to an embodiment may include a first base substrate BSUB1, a first barrier layer BA1disposed on the first base substrate BSUB1, a second base substrate BSUB2disposed on the first barrier layer BA1, a second barrier layer BA2disposed on the second base substrate BSUB2, buffer layers BF1and BF2disposed on the second barrier layer BA2, a switching transistor ST disposed on the buffer layers BF1and BF2, a driving transistor DT, and an organic light emitting diode180. Specifically, the first base substrate BSUB1supports each of the layers disposed thereon. For the first base substrate BSUB1, a transparent substrate may be used when an organic light emitting display device is a rear-side or double-sided emission type display device. When the organic light emitting display device is a top emission type display device, a translucent or opaque substrate as well as a transparent substrate may be applied. The first base substrate BSUB1may include a flexible material such as plastic, and may be, for example, polyimide. The first barrier layer BA1may be disposed on the first base substrate BSUB1. The first barrier layer BA1may prevent the diffusion of impurity ions, may prevent the penetration of moisture or external air, and may perform a surface planarization function. Further, the first barrier layer BA1may serve to impart adhesive properties between the first base substrate BSUB1and the second base substrate BSUB2. For example, the first barrier layer BA1may contact the upper surface of the first base substrate BSUB1and the lower surface of the second base substrate BSUB2, respectively. The first barrier layer BA1may include silicon oxide (SiOx). In an embodiment, in order to improve the adhesion force of the first barrier layer BA1which is disposed between the first base substrate BSUB1and the second base substrate BSUB2, when silicon oxide which will be described later is prepared, the ratio of SiH4gas to N2O gas may be adjusted to 22 or less. For example, the ratio of SiH4gas to N2O gas may range from 19 to 22. Mechanisms for imparting adhesion force to silicon oxide (SiOx) at the interface between the first base substrate BSUB1and the second base substrate BSUB2include, for example, dipole-dipole interaction, hydrogen bonding, hydrogen bonding, and mechanical anchoring. The dipole-dipole interaction may refer to an electrical interaction between polar molecules having dipoles respectively included in the silicon oxide of the first barrier layer BA1and the polyimide of the second base substrate BSUB2. The hydrogen bonding may refer to chemical bonding between hydrogen of silicon oxide of the first barrier layer BA1and polyimide of the second base substrate BSUB2. The mechanical anchoring may refer to physical bonding formed by filling the fine irregularities on the surface of the silicon oxide of the first barrier layer BA1with the polyimide of the second base substrate BSUB2. In an embodiment, when the ratio of SiH4gas to N2O gas is adjusted to 22 or less when preparing the silicon oxide of the first barrier layer BA1, the content of hydrogen in the silicon oxide may increases, and a porous film quality may be obtained. For example, the content of hydrogen in the silicon oxide of the first barrier layer BA1may be 1.20E+21 atom/cm3or more. Accordingly, the content of hydrogen in the silicon oxide of the first barrier layer BA1may increase to increase a dipole site, thereby increasing the dipole-dipole interaction with the polyimide of the second base substrate BSUB2. Further, since the content of hydrogen in the silicon oxide of the first barrier layer BA1increases, a bond (O—H) between oxygen and hydrogen in the polyimide of the second base substrate BSUB2or a bond (N—H) between nitrogen and hydrogen in the polyimide thereof. Still further, since the silicon oxide of the first barrier layer BA1is formed into a porous film, the polyimide of the second base substrate BSUB2penetrates into the porous film, so that mechanical anchoring may be increased. As a result, when the ratio of SiH4gas to N2O gas in the formation of the silicon oxide of the first, barrier layer BA1is adjusted to 22 or less, the adhesion force between the silicon oxide of the first barrier layer BA1and the polyimide of the second base substrate BSUB2and the adhesion force between the silicon oxide of the first harrier layer BA1and the first base substrate BSUB1may increase. The first harrier layer BA1may have an adhesion force of 200 gf/inch or more with the second base substrate BSUB2and an adhesion force of 200 gf/inch or more with the first base substrate BSUB1. In an embodiment, the first barrier layer BA1may have a dielectric constant in the range of about from 4 to 6. When the first barrier layer BA1disposed between the first base substrate BSUB1and the second base substrate BSUB2has a dielectric constant of about from 4 to 6, a value of a capacitor generated due to electric charging at the interface therebetween may be lowered, shifting of the gate voltage of the above-described transistor may be improved, thereby reducing an optical afterimage of the display device. The first barrier layer BA1may have a film stress of −230 MPa or more. The above-described display device is a flexible display device. When the film stress of the first barrier layer BA1increases to −230 MPa or more, tensile properties are further exhibited, thereby improving flexible properties. Meanwhile, the second base substrate BSUB2may be disposed on the first barrier layer BA1. The second base substrate BSUB2may include a flexible material such as plastic, and may include, for example, polyimide. A second barrier layer BA2may be disposed on the second base substrate BSUB2. The second barrier layer BA2may prevent the diffusion of impurity ions, may prevent the penetration of moisture or external air, and may perform a surface planarization function. The second barrier layer BA2may include silicon nitride, silicon oxide, or silicon nitride oxide. A second buffer layer BF2may be disposed on the second barrier layer BA2. The second buffer layer BF2serves to supply hydrogen to a polysilicon semiconductor layer105which will be described later. The second buffer layer BF2may include silicon nitride, silicon oxide, or silicon oxynitride, and preferably may include silicon nitride. The first buffer layer BF1may be disposed on the second buffer layer BF2. The first buffer layer BF1may include silicon nitride, silicon oxide, or silicon oxynitride. The polysilicon semiconductor layer105may be disposed on the first buffer layer BF1. The polycrystalline silicon semiconductor layer105may be made of amorphous silicon or poly silicon. In this case, the crystalline silicon may be formed by crystallizing amorphous silicon. In the method of crystallizing amorphous silicon, amorphous silicon may be crystallized by various methods such as rapid thermal annealing (RTA), solid phase crystallization (SPC), excimer laser annealing (ELA), metal induced crystallization (MIC), metal induced lateral crystallization (MILC), and sequential lateral solidification (SLS). The polysilicon semiconductor layer105includes a second channel region overlapping the second gate electrode121in the thickness direction, that is, in the third direction DR3, a second drain region located at one side of the second channel region, and a second source region located at the other side of the second channel region. A lower gate insulating layer111may be disposed on the polysilicon semiconductor layer105. The lower gate insulating layer111may be a gate insulating layer having a gate insulating function. The lower gate insulating layer111may include a silicon compound or a metal oxide. For example, the lower gate insulating layer111may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, or titanium oxide. They may be used alone or in combination with each other. The lower gate insulating layer111may be a single layer or multiple layers made of different materials. A first conductive layer120may be disposed on the lower gate insulating layer111. The first conductive layer120may include a second gate electrode121. The first conductive layer120may include at least one metal selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Jr), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu). The first conductive layer120may be a single layer or multiple layers. An upper gate insulating layer112may be disposed on the first conductive layer120including the second gate electrode121. The upper gate insulating layer112may be a gate insulating layer having a gate insulating function. The upper gate insulating layer112may include a silicon compound or a metal oxide. For example, the upper gate insulating layer112may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, or titanium oxide. They may be used alone or in combination with each other. The upper gate insulating layer112may be a single layer or multiple layers made of different materials. A second conductive layer130may be disposed on the upper gate insulating layer112. The second conductive layer130may include at least one metal selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu). The second conductive layer130may be a single layer or multiple layers. The second conductive layer130may include a first lower gate electrode131and a capacitor electrode133. The first lower gate electrode131may be disposed to overlap the first channel region of the oxide semiconductor layer145in the thickness direction, and the capacitor electrode133may be disposed to overlap the second channel region of the polysilicon semiconductor layer105in the thickness direction which is equivalent to the third direction DR3. A lower interlayer insulating layer113may be disposed on the second conductive layer130. The lower interlayer insulating layer113may include a silicon compound or a metal oxide. For example, the lower interlayer insulating layer113may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, or titanium oxide. They may be used alone or in combination with each other. The lower interlayer insulating layer113may be a single layer or multiple layers made of different materials. An oxide semiconductor layer145may be disposed on the lower interlayer insulating layer113. The oxide semiconductor layer145may include an oxide. The oxide may include an oxide of at least one selected from Zinc (Zn), indium (In), gallium (Ga), tin (Sn) cadmium (Cd), germanium (Ge), or hafnium (Hf), and a combination thereof. The oxide may include at least one of indium-gallium-zinc oxide (IGZO), zinc-tin oxide (ZTO), and indium-tin oxide (ITO). A first gate insulating layer114may be disposed on the oxide semiconductor layer145. The first gate insulating layer114may be a gate insulating layer having a gate insulating function. The first gate insulating layer114may include a silicon compound or a metal oxide. For example, the first gate insulating layer114may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, or titanium oxide. They may be used alone or in combination with each other. The first gate insulating layer114may be a single layer or multiple layers made of different materials. A portion of the upper surface of the first source region of the oxide semiconductor layer145and a portion of the upper surface of the first drain region of the oxide semiconductor layer145may be exposed by the first gate insulating layer114, respectively. The first gate insulating layer114may be disposed to overlap the first channel region of the oxide semiconductor layer145in the thickness direction which is equivalent to the third direction DR3, and may be disposed so as not to overlap the first source region and first drain region of the oxide semiconductor layer145. A third conductive layer150may be disposed on the first gate insulating layer114. The third conductive layer150may include at least one metal selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Jr), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu). The third conductive layer150may be a single layer or multiple layers. The third conductive layer150may include a first upper gate electrode151. The first upper gate electrode151may be disposed to overlap the first gate insulating layer114in the thickness direction which is equivalent to the third direction DR3. In an embodiment, the gate electrode of the switching transistor may be a double gate electrode including a first upper gate electrode151and a first lower gate electrode131. The first upper gate electrode151and the first lower gate electrode131may be electrically connected to each other. The capacitor electrode133and the second gate electrode121may form a capacitor by interposing an upper gate insulating layer112therebetween. An upper interlayer insulating layer115may be disposed on the third conductive layer150. The upper interlayer insulating layer115may cover the first upper gate electrode151, the side surface of the first gate insulating layer114, and the exposed upper surface of the oxide semiconductor layer in the first source region and the first drain region. The upper interlayer insulating layer115may include a silicon compound or a metal oxide. For example, the upper interlayer insulating layer115may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, or titanium oxide. They may be used alone or in combination with each other. The upper interlayer insulating layer115may be a single layer or multiple layers made of different materials. A fourth conductive layer160may be disposed on the upper interlayer insulating layer115. The fourth conductive layer160may include at least one metal selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Jr), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu). The fourth conductive layer160may be a single layer or multiple layers. The fourth conductive layer160may include a first source electrode161, a first drain electrode163, a second source electrode164, and a second drain electrode165. The fourth conductive layer160may further include a first connection electrode163. The first source electrode161and the first drain electrode163may be connected to the first source region and first drain region of the oxide semiconductor layer145, respectively, through first and second contact holes CNT1and CNT2penetrating the upper interlayer insulating layer115, and the second source electrode164and the second drain electrode165may be connected to the second source region and second drain region of the polysilicon semiconductor layer105, respectively, through fourth and fifth contact holes CNT4and CNT5penetrating the upper interlayer insulating layer115, the lower interlayer insulating layer113, and the gate insulating layers111and112. The first connection electrode163may be connected to the first upper gate electrode151through a third contact hole CNT3penetrating through the upper interlayer insulating layer115. The first connection electrode163may be electrically connected to the first upper gate electrode151, thereby lowering the resistance of the first upper gate electrode151. A first via layer116may be disposed on the fourth conductive layer160. The first via layer116may include an inorganic insulating material or may include an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylenesulfide resin, or benzocyclobutene (BCB). The first via layer116may be a single layer or multiple layers. A fifth conductive layer170which includes a second connection electrode171may be disposed on the first via layer116. The fifth conductive layer170may include at least one metal selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Jr), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu). The fifth conductive layer170may be a single layer or multiple layers. The second connection electrode171may be connected to the second drain electrode165through a sixth contact hole CNT6penetrating a portion of the first via layer116to expose the upper surface of the second drain electrode165. A second via layer117may be disposed on the fifth conductive layer170. The second via layer117may be formed in the same manner as the above-describe first via layer116. An anode electrode181may be disposed on the second via layer117. The anode electrode181may be connected to the second connection electrode171through a seventh contact hole CNT7penetrating the second via layer117. The anode electrode181may be disposed separately for each sub-pixel (“SP” inFIG.2). A bank layer118may be disposed on the anode electrode181. The bank layer118may include an opening OP partially exposing the anode electrode181. The bank layer118may include an organic insulating material or an inorganic insulating material. For example, the bank layer118may include at least one of a photoresist, a polyimide resin, an acrylic resin, a silicone compound, and a polyacrylic resin. An organic light emitting layer182may be disposed on the upper surface of the anode electrode181and in the opening OP of the bank layer118. A cathode electrode183may be disposed on the organic light emitting layer182and the bank layer118. The cathode electrode183may be a common electrode disposed over a plurality of pixels. The anode electrode181, the organic light emitting layer182, and the cathode electrode183may constitute an organic light emitting diode180. An encapsulation layer190may be disposed on the cathode electrode183. The encapsulation layer190may cover the organic light emitting diode180. The encapsulation layer190may be a laminated layer in which inorganic layers and organic layers are alternately stacked. For example, the encapsulation layer190may include a first encapsulation inorganic layer191, an encapsulation organic layer192, and a second encapsulation inorganic layer193, which are sequentially stacked. Hereinafter, a method of manufacturing a display device according to the embodiment ofFIG.4will be described. FIGS.5,6, and7are cross-sectional views illustrating a method of manufacturing a display device according to an embodiment. Referring toFIG.5, firstly, a first base substrate BSUB1is formed on a support substrate MSUB. The support substrate MSUB may be a rigid substrate serving to support overlying elements. For example, the support substrate MSUB may be a glass substrate. The first base substrate BSUB1may be formed by applying polyimide onto the support substrate MSUB by a solution process. Subsequently, a first barrier layer BA1is formed on the first base substrate BSUB1. The first barrier layer BA1may include silicon oxide, and may be formed by a chemical vapor deposition (CVD) using N2O gas and SiH4gas. The first barrier layer BA1may be formed in a chamber at a pressure of 900 mTorr to 1,100 mTorr and a temperature of 350° C. to 400° C. with a power of 8,000 W to 10,000 W. For example, the first barrier layer BA1may be formed in a chamber at a pressure of 1,000 mTorr and a temperature of 370° C. with a power of 8,930 W. The first barrier layer BA1may be formed to have a thickness of about 5,000 Å to about 7,000 Å. In an embodiment, the first barrier layer BA1may be formed by adjusting the flow rates of N2O gas and SiH4gas such that the ratio of SiH4gas to N2O gas is 22 or less. For example, the ratio of SiH4gas to N2O gas may be about 19 to 22. In an embodiment, the flow rate of N2O gas is reduced to relatively increase the ratio of SiH4gas so that the content of hydrogen in the prepared silicon oxide film may be increased, and the silicon oxide may be prepared to have porous film quality. Accordingly, the content of hydrogen in the silicon oxide of the first barrier layer BA1increases to increase dipole sites so that a dipole-dipole interaction between polyimide of the first base substrate BUSB1and polyimide of the second base substrate BSUB2may increase. Further, the content of hydrogen in the silicon oxide of the first barrier layer BA1increases to increase dipole sites so that a bond (O—H) of oxygen and hydrogen in the polyimide of the first base substrate BUSB1and the second base substrate BSUB2and/or a bond (N—H) of nitrogen and hydrogen in the polyimide thereof may increase. Further, since the silicon oxide of the first barrier layer is formed into a porous film, the polyimide of the base substrate BUSB1and the polyimide of the second base substrate BSUB2penetrate into the porous film so that mechanical anchoring may increase. As a result, when the ratio of SiH4gas to N2O gas in the formation of the silicon oxide of the first barrier layer BA1is adjusted to 22 or less, the adhesion force between the silicon oxide of the first barrier layer BA1and the polyimide of the second base substrate BSUB2and the adhesion force between the silicon oxide of the first barrier layer BA1and the first base substrate BSUB1may increase. Subsequently, referring toFIG.6, polyimide is applied onto the first barrier layer BA1by a solution process to form a second base substrate BSUB2. The second base substrate BSUB2may be the same as the above-described first base substrate BSUB1. Silicon nitride, silicon oxide, or silicon oxynitride is deposited on the second base substrate BSUB2by a chemical vapor deposition method to form a second barrier layer BA2. Next, a second buffer layer BF2and a first buffer layer BF1are sequentially formed on a second barrier layer BA2. The first buffer layer BF1and the second buffer layer BF2may be entirely formed on the second barrier layer BA2, and may be deposited by a chemical vapor deposition method. Each of the first buffer layer BF1and the second buffer layer BF2may be formed as a single layer of silicon nitride, silicon oxide, or silicon nitride oxide, or multiple layers thereof. Then, amorphous silicon is deposited on the first buffer layer BF1by a chemical vapor deposition method and crystallized to form a polycrystalline silicon semiconductor layer105. Silicon nitride, silicon oxide, or silicon nitriate is deposited on the support substrate MSUB provided with the polysilicon semiconductor layer105by a chemical vapor deposition method to form a lower gate insulating layer111. Next, a metal is deposited on the lower gate insulating layer111by a physical vapor deposition (PVD) method and patterned to form a first conductive layer120. The first conductive layer120may be formed to include a second gate electrode121. Silicon nitride, silicon oxide, or silicon oxynitride is deposited on the support substrate MSUB provided with the first conductive layer120by a chemical vapor deposition method to form an upper gate insulating layer112. Subsequently, a metal is deposited on the upper gate insulating layer112by a physical vapor deposition (PVD) method and patterned to form a second conductive layer130. The second conductive layer130may be formed to include first upper gate electrode131and a capacitor electrode133. Silicon nitride, silicon oxide, or silicon oxynitride is deposited on the support substrate MSUB provided with the second conductive layer130by a chemical vapor deposition method to form a lower interlayer insulating layer113. Next, a plurality of oxide materials are deposited on the lower interlayer insulating layer113using a chemical vapor deposition method or a physical vapor deposition method to form an oxide semiconductor layer145. Silicon nitride, silicon oxide, or silicon oxynitride is deposited on the support substrate MSUB provided with the oxide semiconductor layer145by a chemical vapor deposition method to form a first gate insulating layer114. Subsequently, a metal is deposited on the first gate insulating layer114by a physical vapor deposition (PVD) method and patterned to form a third conductive layer150. The third conductive layer150may be formed to include first upper gate electrode151. Silicon nitride, silicon oxide, or silicon oxynitride is deposited on the support substrate MSUB provided with the third conductive layer150by a chemical vapor deposition method to form an upper interlayer insulating layer115. The upper interlayer insulating layer115is etched to form first, second, and third contact holes CNT1, CNT2, CNT3penetrating the upper interlayer insulating layer115, and to form fourth and fifth contact holes CNT4and CNT5penetrating the upper interlayer insulating layer115, the lower interlayer insulating layer113, and the gate insulating layers111and112. Subsequently, a metal is deposited on the upper interlayer insulating layer115by a physical vapor deposition (PVD) method and patterned to form a fourth conductive layer160. The fourth conductive layer160may be formed to include a first source electrode161, a first drain electrode163, a second source electrode164, a second drain electrode165, and a first connection electrode163. The first source electrode161and the first drain electrode163may be connected to the first source region and first drain region of the oxide semiconductor layer145, respectively, through the first and second contact holes CNT1and CNT2penetrating the upper interlayer insulating layer115, and the second source electrode164and the second drain electrode165may be connected to the second source region and second drain region of the polysilicon semiconductor layer105, respectively, through the fourth and fifth contact holes CNT4and CNT5penetrating the upper interlayer insulating layer115, the lower interlayer insulating layer113, and the gate insulating layers111and112. The first connection electrode163may be connected to the first upper gate electrode151through the third contact hole CNT3penetrating through the upper interlayer insulating layer115. Next, referring toFIG.7, an inorganic insulating material or an organic insulating material is applied on the support substrate MSUB provided with the fourth conductive layer160to form a first via layer116. For example, the first via layer116may be formed by applying an organic insulating material onto the support substrate MSUB through a solution process. Subsequently, the first via layer116is etched to partially penetrate the first via layer116to form a sixth contact hole CNT6exposing the upper surface of the second drain electrode165. Next, a metal is deposited on the support substrate MSUB provided with the first via layer116by a physical vapor deposition (PVD) method and patterned to form a fifth conductive layer170. The fifth conductive layer170may be formed to include a second connection electrode171. The second connection electrode171may be connected to the second drain electrode165through the sixth contact hole CNT6penetrating a portion of the first via layer116to expose the upper surface of the second drain electrode165. Subsequently, an inorganic insulating material or an organic insulating material is applied onto the support substrate MSUB provided with the fifth conductive layer170to form a second via layer117. The second via layer117is etched to partially penetrate the second via layer117to form a seventh contact hole CNT7exposing the upper surface of the second connection electrode171. Next, an anode electrode material is applied onto the second via layer117and patterned to form an anode electrode181. The anode electrode material may be a transparent conductive oxide, for example, indium tin oxide (ITO) or indium zinc oxide (IZO). The anode electrode181may be connected to the second connection electrode171through the seventh contact hole CNT7. Subsequently, an organic insulating material is applied onto the support substrate MSUB provided with the anode electrode181by a solution process to form a bank layer118. A portion of the bank layer118is etched to form an opening OP partially exposing the anode electrode181. Next, an organic light emitting material is deposited on the support substrate MSUB provided with the bank layer118to form an organic light emitting layer182. The organic light emitting layer182may further include at least one organic functional layer selected from a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer. Subsequently, a cathode electrode material, for example, a metal or a transparent conductive oxide is deposited on the support substrate MSUB provided with the organic light emitting layer182to form a cathode electrode183. The anode electrode181, the organic light emitting layer182, and the cathode electrode183may constitute an organic light emitting diode180. Next, an inorganic insulating material is sequentially deposited on the support substrate MSUB provided with the organic light emitting diode180to form an encapsulation layer190. The encapsulation layer190may be formed by alternately depositing an organic insulating material or an inorganic insulating material. The encapsulation layer190may be a laminated layer in which inorganic layers and organic layers are alternately stacked. For example, the encapsulation layer190may include a first encapsulation inorganic layer191, an encapsulation organic layer192, and a second encapsulation inorganic layer193, which are sequentially stacked. Subsequently, the target substrate MSUB is separated from the first base substrate BSUB1to manufacture a display device including the first base substrate BSUB1, the first barrier layer BA1, the second base substrate BSUB2, the second barrier layer BA2, the first and second buffer layers BF1and BF2, the switching and driving transistors ST and DT, and the organic light emitting diode180. Hereinafter, Preparation Examples and Experimental Examples of the above-described first barrier layer including silicon oxide and a display device including the same will be described. Preparation Example 1: Preparation 1 of Silicon Oxide Thin Film A glass substrate was mounted in a chamber, and a silicon oxide thin film is formed to a thickness of about 6,000 Å using N2O gas and SiH4gas under the conditions of a power of 8,930 W, a pressure of 1,000 mTorr, and a temperature of 370° C. In this case, a number of silicon oxide thin films are formed by adjusting the ratio of SiH4gas to N2O gas to about 22 to about 60, respectively. Experimental Example 1: Measurement of Physical Properties of Silicon Oxide Thin Film The FT-IR Si—O bonding peaks, hydrogen contents, film stresses, and dielectric constants of the silicon oxide thin films prepared in Preparation Example 1 were measured, respectively. FIG.8is a graph illustrating the Fourier Transform-Infrared Spectroscopy (FT-IR) Si—O bonding peaks of silicon oxide thin films according to Experimental Example 1.FIG.9is a graph illustrating the hydrogen contents of silicon oxide thin films according to Experimental Example 1.FIG.10is a graph illustrating the film stresses of silicon oxide thin films according to Experimental Example 1.FIG.11is a graph illustrating the dielectric constants of silicon oxide thin films according to Experimental Example 1. Referring toFIGS.8,9,10, and11, as the ratio of SiH4gas to N2O gas decreases from 60 to 22, the Si—O bonding peak value of the silicon oxide thin film decreases from about 1060 nm to about 1048 nm, the hydrogen content thereof increases from about 6.00E+20atom/cm3to 1.20E+21 atom/cm3, the film stress thereof increases from about −370 Mpa to about −230 Mpa, and the dielectric constant thereof decreases from about 5.11 to about 5.04. Thus, when the ratio of SiH4gas to N2O gas is about 22 or less, it may be found that the Si—O bonding peak value of the silicon oxide thin film decreases to about 1,048 nm or less, the hydrogen content thereof increases to 1.20E+21 atom/cm3or more, the film stress thereof increases to about −230 Mpa or more, and the dielectric constant thereof decreases to about 5.04 or less. Preparation Example 2: Preparation 2 of Silicon Oxide Thin Film A first polyimide layer is applied onto a glass substrate, a silicon oxide thin film is formed on the first polyimide layer under the same conditions as in Preparation Example 1, and a second polyimide layer is applied on the silicon oxide thin film. In this case, thin films #1, #2, #3, #4, and #5 are prepared such that the ratios of SiH4gas to N2O gas are about 19.6, 21.2, 23.0, 24.9, and 34.3, respectively. Further, thin film #6 is prepared by additionally forming an amorphous silicon layer between the silicon oxide thin film and second polyimide layer in the thin film #3. Experimental Example 2: Measurement of Adhesion Force of Silicon Oxide Thin Film to Second Polyimide Layer Adhesion forces of the thin films #1, #2, #3, #4, #5, and #6 were measured using a tensile tester (UTM) and given in Table 1 below, and adhesion forces of the thin films #2, #3, and #6 are shown in the graph ofFIG.12.FIG.12is a graph illustrating the adhesion forces of silicon oxide thin films according to Experimental Example 2. TABLE 1Thin filmRatio of SiH4to N2OAdhesion force (gf/inch)#119.6323.8#221.2206.3#323.0105.3#424.9102.0#534.355.0#623.0288.6 Referring to Table 1 andFIG.12, as the ratio of SiH4gas to N2O gas decreases, the adhesion forces of the thin films increases. In particular, when the ratio of SiH4gas to N2O gas is about 22 or less, the adhesion forces significantly increases, and adhesion forces equal to or higher than that of the case where the amorphous silicon thin film of the thin film #6 is present are exhibited. Thus, it may be found that, as the ratio of SiH4gas to N2O decreases, the content of hydrogen in the silicon oxide thin film increases so that dipole sites and hydrogen bonding sites increase to increase the adhesion force of the silicon oxide thin film to polyimide. Preparation Example 3 The above-described display device #1 ofFIG.4, including the thin film #6, was manufactured, and display device #2 including the thin film #2 is manufactured. Experimental Example 3 The display devices #1 and #2 were respectively driven to measure the degree of afterimage thereof.FIG.13is a graph illustrating the degree of afterimage of the display devices #1 and #2 according to Experimental Example 3. Referring toFIG.13, it is found that the average value of the degree of afterimage of the display device #1, and the average value of the degree of afterimage of the display device #2 decreases to about 33.00. Thus, it may be found that, in the display device #1 including an amorphous silicon layer, at the interface between the amorphous silicon layer and the polyimide, the degree of afterimage is large due to the shift of a gate voltage caused by charge trapping, whereas in the display device #2 not including an amorphous silicon layer, at the interface between the amorphous silicon layer and the polyimide, the degree of afterimage is remarkably improved due to the reduction of charge trapping. According to a display device and a method of manufacturing the same according to embodiments, the ratio of SiH4gas to N2O gas may be adjusted to about 22 or less when forming silicon oxide of a first barrier layer, thereby increasing the adhesion force of the silicon oxide of the first barrier layer to the polyamide of the second base substrate and the first base substrate. Further, according to an embodiment, the first barrier layer having a dielectric constant in the range of about 4 to 6 may be formed so that the value of a capacitor generated by an electric charging at an interface between a second barrier substrate and a first barrier substrate may decrease to improve the shift of a gate voltage of a transistor, thereby reducing the optical afterimage of the display device. The effects of the present disclosure are not limited by the foregoing, and other various effects are anticipated herein. In concluding the detailed description, those skilled in the art will appreciate that many variations and modifications can be made to the preferred embodiments without substantially departing from the principles of the present disclosure. Therefore, the disclosed preferred embodiments of the disclosure are used in a generic and descriptive sense only and not for purposes of limitation. | 58,195 |
11943995 | DETAILED DESCRIPTION Reference will now be made in detail to the exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts. Advantages and features of the present disclosure, and implementation methods thereof will be clarified through following embodiments described with reference to the accompanying drawings. The present disclosure may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present disclosure to those skilled in the art. Further, the present disclosure is only defined by scopes of claims. A shape, a size, a ratio, an angle, and a number disclosed in the drawings for describing embodiments of the present disclosure are merely an example, and thus, the present disclosure is not limited to the illustrated details. Like reference numerals refer to like elements throughout. In the following description, when the detailed description of the relevant known function or configuration is determined to unnecessarily obscure the important point of the present disclosure, the detailed description will be omitted. When “comprise,” “have,” and “include” described in the present specification are used, another part may be added unless “only” is used. The terms of a singular form may include plural forms unless referred to the contrary. In construing an element, the element is construed as including an error or tolerance range although there is no explicit description of such an error or tolerance range. In describing a position relationship, for example, when a position relation between two parts is described as, for example, “on,” “over,” “under,” and “next,” one or more other parts may be disposed between the two parts unless a more limiting term, such as “just” or “direct(ly)” is used. In describing a time relationship, for example, when the temporal order is described as, for example, “after,” “subsequent,” “next,” and “before,” a case that is not continuous may be included unless a more limiting term, such as “just,” “immediate(ly),” or “direct(ly)” is used. It will be understood that, although the terms “first,” “second,” etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure. Features of various embodiments of the present disclosure may be partially or overall coupled to or combined with each other, and may be variously inter-operated with each other and driven technically as those skilled in the art can sufficiently understand. The embodiments of the present disclosure may be carried out independently from each other, or may be carried out together in co-dependent relationship. Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. FIGS.1A and1Bare schematic views of a display apparatus according to an embodiment of the present disclosure,FIG.1Ais a schematic view illustrating a shape before some assembly processes, andFIG.1Bis a schematic view illustrating a shape after some assembly processes. As seen inFIGS.1A and1B, the display apparatus according to an embodiment of the present disclosure may include a display panel10, a circuit driving element100, and a printed circuit board (PCB)200. The display panel10may include a display area DA at a center thereof and a non-display area NDA outside the display area DA. The display area DA may be an area in which an image is displayed, and for example, may include a plurality of unit pixels P each of which includes a first subpixel SP1emitting red light, a second subpixel SP2emitting green light, and a third subpixel SP3emitting blue light. Each of the first to third subpixels SP1to SP3may display an image on the basis of a gate signal supplied through a gate line G and a data signal supplied through a data line D. The structure and arrangement type of the first to third subpixels SP1to SP3may be variously modified. The non-display area NDA may be an area in which an image is not displayed, and a plurality of signal lines and a plurality of pads may be provided in the non-display area NDA and may make an electrical connection between the display area DA and the circuit driving element100. The display panel10may be implemented as various display panels, known to those skilled in the art, such as a liquid crystal display panel, an organic light emitting display panel, and an inorganic light emitting display panel. The circuit driving element100may be provided in the non-display area NDA of the display panel10. In detail, a plurality of circuit driving elements100may be arranged at a certain interval and may be electrically connected to the non-display area NDA of the display panel10. The plurality of circuit driving elements100may be electrically connected to the signal lines and the pads of the non-display area NDA and may drive the unit pixel P provided in the display area DA. Also, the circuit driving element100may be connected to the PCB200and may be controlled by various circuit elements mounted on the PCB200. The circuit driving element100may be configured with a chip-on film (COF) where a driving chip120is provided on a film110. In this case, the film110may be implemented as a flexible film. Also, the circuit driving element100may further include a crack prevention layer130. The crack prevention layer130may be formed to cover the driving chip120, on a top surface of the driving chip120and may prevent a crack from occurring in the driving chip120when the circuit driving element100is bent. The crack prevention layer130may be manufactured as a film type and may be attached on the driving chip120, but is not limited thereto and may be formed on the driving chip120through various processes, known to those skilled in the art, such as a coating process and a deposition process. Moreover, the driving chip120may be implemented as a chip-on glass (COG) type where the driving chip120is provided on a glass substrate of the display panel10or a chip-on plastic (COP) type where the driving chip120is provided on a plastic substrate of the display panel10, and in this case, the crack prevention layer130may be provided on the top surface of the driving chip120. The driving chip120may be configured as a data driving chip. However, depending on the case, the driving chip120may be configured as a gate driving chip. In a case where the circuit driving element100is configured as a data driver provided at one side, for example, an upper side, of the display panel10, a gate driver may be equipped in the display panel10, in at least one of a left region and a right region of the display panel10, which is called “Gate In Panel”. In the drawing, an example is illustrated where the circuit driving element100is provided at only the one side (for example, the upper side) of the display panel10, but the present embodiment is not limited thereto and the circuit driving element100may be additionally provided at the other side, for example, a lower side of the display panel10. Depending on the case, the circuit driving element100may be additionally provided at a left side or a right side of the display panel10. The circuit driving element100may extend to be bent from one side of a front surface, for example, an upper side of the front surface of the display panel10as seen inFIG.1Ato one side of a rear surface, for example, an upper side of a rear surface of the display panel10as seen inFIG.1B. In detail, the circuit driving element100may extend to the one side of the rear surface, for example, the upper side of the rear surface of the display panel10while contacting one end, for example, an upper end of the display panel10in a state where the circuit driving element100connects the one side of the front surface, for example, the upper side of the front surface of the display panel10. The circuit driving element100may extend from the front surface of the display panel10to the rear surface of the display panel10while contacting the display panel10, and thus, a bezel area of the display panel10may be reduced. The PCB200may be connected to the plurality of circuit driving elements100and may be electrically connected to the driving chip120of each of the plurality of circuit driving elements100. The PCB200, as seen inFIG.1B, may be electrically connected to the plurality of circuit driving elements100at the one side of the rear surface, for example, the upper side of the rear surface of the display panel10. Although not shown in detail, a timing controller and a power supply may be included in the PCB200. Each of the timing controller and the power supply may be implemented as an integrated circuit (IC) chip and may be mounted on the PCB200. The timing controller may receive digital video data and timing signals from the outside, generate a data timing control signal and a gate timing control signal on the basis of the received timing signals, and output the data timing control signal and the gate timing control signal to the circuit driving element100. The power supply may be supplied with a high level voltage from the outside to generate a plurality of driving voltages and may supply the generated plurality of driving voltages to the timing controller and the driving chip120of the circuit driving element100. The PCB200may be implemented as a flexible film. FIG.2is a schematic view of a display apparatus according to another embodiment of the present disclosure and relates to a flexible display apparatus. Herein, it should be construed that flexible display apparatuses include all display apparatuses, where at least a portion thereof is bendable, such as bendable, foldable, and rollable display apparatuses. As seen inFIG.2, a display panel10may be bent with respect to a bending axis (for example, a vertical bending axis). Accordingly, the display panel10may be configured as a flexible display panel. The bending axis may be designed to be fixed to one side of the display panel10without moving and may configure a foldable display apparatus. The display panel may be equipped with a plurality of bending axes. Also, a whole portion of the display panel10may be continuously bent and may configure a rollable display apparatus. The display panel10may be bent with respect to the bending axis, and thus, a circuit driving element100attached on the display panel10may be bent with respect to the bending axis. Accordingly, a film110of the circuit driving element100may be implemented as a flexible film. Moreover, a driving chip120of the circuit driving element100may be bent with respect to the bending axis, and thus, a thickness of the driving chip120should be appropriately set so that the driving chip120is smoothly bent. A thickness of a general driving chip of the related art is within a range of 500 μm to 600 μm, and in a case where such a thickness range is applied to a driving chip, bending may not be smoothly performed. Therefore, in an embodiment of the present disclosure, a thickness of the driving chip120may be set to a range of 150 μm to 250 μm. When a thickness of the driving chip120is greater than 250 μm, there may be a possibility that bending is not easily performed, and when a thickness of the driving chip120is less than 150 μm, a process of forming the driving chip120may not be easily performed. The driving chip120having a thin thickness may be obtained through a grinding process performed on a rear surface of a wafer. As described above, in a case where a thickness of the driving chip120is set to be relatively thin so that the driving chip120is easily bent, a possibility that a crack occurs in the driving chip120in bending may increase. In an embodiment of the present disclosure, the crack prevention layer130may be formed on a top surface of the driving chip120to cover the top surface of the driving chip120, and thus, may prevent a crack from occurring in the driving chip120when the driving chip120is bent. The crack prevention layer130may be formed of a flexible material having elasticity, and for example, may include thermo plastic polyurethane (TPU). The TPU may include a polymer obtained by reacting polyol with diisocyanate molecules such as diphenyl methane diisocyanate (MDI) or toluene diisocyanate (TDI). A thickness of the crack prevention layer130may be set to a range of 40 μm to 130 μm. For example, when a thickness of the crack prevention layer130is less than 40 μm, a crack prevention function may be reduced, and when a thickness of the crack prevention layer130is greater than 130 μm, an adverse effect may increase where a total thickness increase with respect to the enhancement of the crack prevention function. As seen inFIG.3, a first signal pad12may be formed at an upper side of one surface, for example, a right surface of the display panel10which displays an image. The first signal pad12may be provided in the non-display area of the display panel10. The circuit driving element100may include a film110, a driving chip120, and a crack prevention layer130. The film110may extend from one surface, for example, a right surface of the display panel10to the other surface, for example, a left surface of the display panel10via one end, for example, an upper end, of the display panel10. In this case, a first pad112may be provided at one side of one surface of the film110, wherein the one surface of the film110faces the display panel10, and a second pad114may be provided at the other side of the one surface of the film110. The first pad112may be connected to the first signal pad12of the display panel10, and the second pad114may be connected to a second signal pad202of the PCB200. The driving chip120may be provided on the one surface of the film110, and particularly, may face the other surface of the display panel10. The driving chip120may be provided on the same plane as the first pad112and the second pad114, on the film110. The crack prevention layer130may be formed to cover the driving chip120at one surface of the film110. The crack prevention layer130may be formed to contact the other surface of the display panel10. The crack prevention layer130may be provided between the driving chip120and the display panel10and may protect each of the driving chip120and the display panel10. That is, when the driving chip120contacts the display panel10, the driving chip120may be damaged or a scratch may occur in the display panel10, but in an embodiment of the present disclosure, because the crack prevention layer130is provided between the driving chip120and the display panel10, such a problem may be solved. The second signal pad202may be provided on one surface of the PCB200, wherein the one surface of the PCB200faces the film110of the circuit driving element100, and the second signal pad202may connect the second pad114of the film110. The other surface of the PCB200may contact the other surface of the display panel10. FIG.4is a plan view of a circuit driving element100according to an embodiment of the present disclosure. As seen inFIG.4, a first pad112may be provided at one side, for example, an upper side of a film110, and a second pad114may be provided at the other side, for example, a lower side of the film110. A driving chip120may be provided at a center portion of the film110. The driving chip120may be electrically connected to each of the first pad112and the second pad114. In this case, an insulation layer116may be formed between the driving chip120and the first and second pads112and114. The insulation layer116may be formed to cover a portion of each of the first and second pads112and114but may be formed not to cover an end portion of each of the first and second pads112and114, and thus, the end portion of each of the first and second pads112and114may be exposed at the outside. The driving chip120may be implemented to have a long axis L and a short axis S. In this case, the long axis L may be vertical to a bending axis, and thus, the driving chip120may be vulnerable to a crack in bending. Accordingly, according to an embodiment of the present disclosure, the crack prevention layer130having a wider area than that of the driving chip120may cover the driving chip120, thereby preventing a crack from occurring in the driving chip120. FIG.5is a cross-sectional view of a circuit driving element100according to an embodiment of the present disclosure. As seen inFIG.5, a first pad112and a second pad114may be provided on one surface of a film110. The first pad112and the second pad114may be apart from each other. A first bump115amay be provided on a top surface of the first pad112, and a second bump115bmay be provided on a top surface of the second pad114. A driving chip120may be provided on the top surface of the first bump115aand the second bump115b. Accordingly, the driving chip120may be electrically connected to the first pad112through the first bump115a, and the driving chip120may be electrically connected to the second pad114through the second bump115b. An insulation layer116may be formed on the first pad112and the second pad114. The insulation layer116may be formed not to cover a portion, for example, an end portion of each of the first pad112and the second pad114, and thus, the end portion of each of the first pad112and the second pad114may be exposed at the outside. The insulation layer116may be formed not to overlap the driving chip120. Also, a polymer resin118may be filled into a space between the film110and the driving chip120. The polymer resin118may also be filled into a space between the driving chip120, the first and second pads112and114, and the insulation layer116. A crack prevention layer130may be formed on a top surface of the driving chip120. The crack prevention layer130may extend from the top surface of the driving chip120to a top surface of the insulation layer116. The crack prevention layer130may be formed to overlap a whole portion of the driving chip120, and moreover, may be formed to overlap at least a portion of the insulation layer116. Therefore, the crack prevention layer130may be formed to contact the whole top surface of the driving chip120, or may be formed to contact at least a portion of the top surface of the insulation layer116. As described above, the crack prevention layer130may be formed to overlap at least a portion of the insulation layer116, and thus, may prevent a crack from occurring in the driving chip120and may prevent a crack from occurring in an interface between the driving chip120and the insulation layer116. FIG.6is a cross-sectional view of a display apparatus according to another embodiment of the present disclosure and is a cross-sectional view according to another embodiment in the bending-axis direction in the structure ofFIG.2.FIG.6differs from a structure ofFIG.3described above in that positions of the driving chip120and the crack prevention layer130are changed. Therefore, like reference numerals refer to like elements, and different elements will be described below. According toFIG.3described above, the driving chip120and the crack prevention layer130may be provided on one surface of the film110facing the display panel10, and thus, the crack prevention layer130may be formed to contact the display panel10. On the other hand, according toFIG.6, the driving chip120and the crack prevention layer130may be provided on the other surface of the film110which does not face the display panel10, and thus, the crack prevention layer130may be formed not to contact the display panel10. FIG.7is a cross-sectional view of a circuit driving element100according to another embodiment of the present disclosure and relates to a circuit driving element100capable of being applied to a structure ofFIG.6described above. FIG.7differs from a structure ofFIG.5described above in that a first via V1and a second via V2are provided in a film110and first and second pad extension portions112aand114aare provided on the other surface of the film110, for example, a bottom surface of the film110. Therefore, like reference numerals refer to like elements, and different elements will be described below. As seen inFIG.7, the first via V1may be formed in a certain region of the film110overlapping the first pad112, and the second via V2may be formed in a certain region of the film110overlapping the second pad114. The first via V1may be electrically connected to the first pad112, and the second via V2may be electrically connected to the second pad114. The first via V1and the second via V2may be formed to pass through the film110. The first pad extension portion112aelectrically connected to the first via V1while overlapping the first via V1and the second pad extension portion114aelectrically connected to the second via V2while overlapping the second via V2may be provided in the bottom surface of the film110. Accordingly, the first pad extension portion112amay be electrically connected to the first pad112via the first via V1, and the second pad extension portion114amay be electrically connected to the second pad114via the second via V2. Therefore, according to a structure ofFIG.7, the driving chip120may be provided on one surface of the film110, and the first and second pad extension portions112aand114amay be provided on the other surface of the film110. The first and second pads112and114provided on a surface opposite to the driving chip120in a structure ofFIG.6described above may correspond to the first and second pad extension portions112aand114aofFIG.7. The first pad extension portion112ain the structure ofFIG.7may be connected to the first signal pad12of the display panel10inFIG.6described above, and the second pad extension portion114amay be connected to the second signal pad202of the PCB200inFIG.6described above. Therefore, in the structure ofFIG.7, a top surface of the first pad112and a top surface of the second pad114may not be exposed at the outside. Accordingly, although not shown, an insulation layer116may be formed to cover the whole top surface of the first pad112and the whole top surface of the second pad114. According to the embodiments of the present disclosure, because a circuit driving element includes a crack prevention layer provided on a driving chip, a crack may be prevented from occurring in the driving chip when the circuit driving element is bent. According to the embodiments of the present disclosure, because a long axis of the driving chip is vertical to a bending axis, the driving chip may be vulnerable to a crack when being bent, but the crack prevention layer having a wider area than that of the driving chip may be provided to cover the driving chip, thereby preventing a crack from occurring in the driving chip. According to the embodiments of the present disclosure, the crack prevention layer may be formed to overlap at least a portion of an insulation layer provided on a pad, and thus, may prevent a crack from occurring in an interface between the driving chip and the insulation layer. According to the embodiments of the present disclosure, the crack prevention layer may be provided between the driving chip and a display panel, thereby preventing the occurrence of damage when the driving chip contacts the display panel. The above-described feature, structure, and effect of the present disclosure are included in at least one embodiment of the present disclosure, but are not limited to only one embodiment. Furthermore, the feature, structure, and effect described in at least one embodiment of the present disclosure may be implemented through combination or modification of other embodiments by those skilled in the art. Therefore, content associated with the combination and modification should be construed as being within the scope of the present disclosure. It will be apparent to those skilled in the art that various modifications and variations can be made in the present disclosure without departing from the spirit or scope of the disclosures. Thus, it is intended that the present disclosure covers the modifications and variations of this disclosure provided they come within the scope of the appended claims and their equivalents. | 24,741 |
11943996 | DETAILED DESCRIPTION The invention now will be described more fully hereinafter with reference to the accompanying drawings, in which various embodiments are shown. This invention may, however, be embodied in many different forms, and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like reference numerals refer to like elements throughout. It will be understood that when an element is referred to as being “on” another element, it can be directly on the other element or intervening elements may be present therebetween. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present. It will be understood that, although the terms “first,” “second,” “third” etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, “a first element,” “component,” “region,” “layer” or “section” discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms, including “at least one,” unless the content clearly indicates otherwise. “Or” means “and/or.” As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. It will be further understood that the terms “comprises” and/or “comprising,” or “includes” and/or “including” when used in this specification, specify the presence of stated features, regions, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, regions, integers, steps, operations, elements, components, and/or groups thereof. Furthermore, relative terms, such as “lower” or “bottom” and “upper” or “top,” may be used herein to describe one element's relationship to another elements as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures. For example, if the device in one of the figures is turned over, elements described as being on the “lower” side of other elements would then be oriented on “upper” sides of the other elements. The exemplary term “lower,” can therefore, encompasses both an orientation of “lower” and “upper,” depending on the particular orientation of the figure. Similarly, if the device in one of the figures is turned over, elements described as “below” or “beneath” other elements would then be oriented “above” the other elements. The exemplary terms “below” or “beneath” can, therefore, encompass both an orientation of above and below. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein. Embodiments are described herein with reference to cross section illustrations that are schematic illustrations of idealized embodiments. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments described herein should not be construed as limited to the particular shapes of regions as illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region illustrated or described as flat may, typically, have rough and/or nonlinear features. Moreover, sharp angles that are illustrated may be rounded. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the present claims. Hereinafter, embodiments of an organic light emitting display device and a method of manufacturing an organic light emitting display device according to the invention will be described in detail with reference to the accompanying drawings. FIG.1is a plan view showing an organic light emitting display according to an embodiment of the invention.FIG.2is a plan view showing a support member included in the organic light emitting display ofFIG.1.FIG.3is a perspective view showing a shape in which a display panel included in the organic light emitting display ofFIG.1is folded, andFIG.4is a cross-sectional view taken along line I-I′ ofFIG.1.FIG.5is a partial enlarged plan view of an area ‘A’ of the organic light emitting display ofFIG.3. More particularly,FIGS.1and4show an embodiment of the organic light emitting display device100in an unfolded state. Referring toFIGS.1,2,3,4and5, an embodiment of the organic light emitting display device100may include a display panel200, an adhesive member205, a shock absorbing member410(e.g., a cushion layer410), a primer coating layer415(e.g., a coating layer415) and a support member500(e.g., a support layer500). In an embodiment, as shown inFIG.1, the organic light emitting display device100may include a display area10and a foldable area20. The display area10is an area in which an image is displayed from the display panel200, and the foldable area20is an area in which the organic light emitting display device100is folded or unfolded. In an embodiment, a part of the display area10may define the foldable area20. In such an embodiment, the image may also be displayed in the foldable area20. In an embodiment, as shown inFIGS.2and5, a plurality of openings535, a plurality of protrusions530, and a plurality of trenches520may be defined or formed in the support member500. In such an embodiment, a width of the foldable area20shown inFIGS.1and2in a first direction D1parallel to a top surface of the organic light emitting display device100may be substantially narrower than those shown inFIGS.1and2. In the drawings, the width is shown relatively wide for convenience of illustration and description. In an embodiment of the organic light emitting display device100, a display panel200may be provided. The display panel200may include a plurality of pixels, and may display an image through the pixels. In one embodiment, for example, the display panel200may have a first surface51on which the image is displayed and a second surface S2opposite to the first surface51. In an embodiment, the display panel200may have a first side surface SS1and a second side surface SS2opposite to (or facing) the first side surface SS1. As shown inFIG.3, when the display panel200positioned in the foldable area20is folded (or in-folded), the first side surface SS1and the second side surface SS2may be positioned adjacent to each other. In an embodiment, the display panel200positioned in the foldable area20may have a curved shape. In such an embodiment, the first surface51may be positioned inside, and the second surface S2may be positioned outside. In such an embodiment, the display panel200may be folded (or out-folded) such that the first surface51is positioned outside and the second surface S2is positioned inside. Referring toFIGS.2,4and5, in an embodiment of the organic light emitting display device100, the support member500may be disposed on a bottom surface of the display panel200. In such an embodiment, the support member500may be disposed on the second surface S2of the display panel200, and a plurality of openings535may be defined or formed through the support member500on the foldable area20or to overlap the foldable area20. In an embodiment, the openings535may include openings531arranged in the first direction D1parallel to the top surface of the organic light emitting display device100, and openings532shifted in a second direction D2orthogonal to the first direction D1and arranged in the first direction D1. In such an embodiment, the support member500may further include a plurality of protrusions530protruding in a third direction D3opposite to the second direction D2. In such an embodiment, a space between two adjacent protrusions among the protrusions530may define a trench520. In one embodiment, for example, the openings535may include 1stto nth(where n is an integer of 2 or greater) openings arranged in the first direction D1, and a kth(where k is an even number between 1 and n) opening among the 1stto nthopenings may be shifted in the second direction orthogonal to the first direction. In such an embodiment, the support member500may further include protrusions positioned in the third direction D3of the (k−1)thand (k+1)thopenings among the 1stto nthopenings, and the trench may be defined by the protrusions. The support member500may serve to support the display panel200, and may also serve to enable the display panel200to be folded. In one embodiment, for example, the support member500may be disposed on the entire portion of the second surface S2of the display panel200to support the display panel200, and may prevent the display panel200positioned in the foldable area20from sagging due to the support member500and the protrusions530positioned between the openings535on the foldable area20. In an embodiment, the openings535are defined or formed on the foldable area20, so that the display panel200may be effectively folded in the foldable area20. In an embodiment of the organic light emitting display device100, the primer coating layer415and the shock absorbing member410may be disposed in the openings535. In one embodiment, for example, the primer coating layer415may be disposed on a side wall of the support member500which define the openings535, and the shock absorbing member410may be filled on the primer coating layer415disposed on the side wall of the support member500. In such an embodiment, the primer coating layer415may be coated relatively thinly on a top surface of the support member500and on a side wall533of each of the openings531and a side wall534of each of the openings532on the foldable area20, and the shock absorbing member410may be disposed on the primer coating layer415. In such an embodiment, the side wall of the support member500may be defined as the side wall533of each of the openings531and the side wall534of each of the openings532. In an embodiment, the primer coating layer415and the shock absorbing member410may also be disposed on a top surface of each of the protrusions530and a side wall521of each of the trenches520. In one embodiment, for example, the primer coating layer415may be disposed on the side wall521of each of the trenches520, and the shock absorbing member410may be filled on the primer coating layer415disposed on the side wall521of each of the trenches520. In such an embodiment, the primer coating layer415may be relatively thinly coated on the top surface of each of the protrusions530and on the side wall521of each of the trenches520on the foldable area20, and the shock absorbing member410may be disposed on the primer coating layer415. In an embodiment, when the organic light emitting display device100is folded, each shape of the openings535may be deformed. In one embodiment, for example, each of the openings535has a geometric shape, so that the support member500positioned on the foldable area20may not be deformed in a depth direction (for example, in a direction from the support member500to the display panel200), but may be deformed in a longitudinal direction (for example, in the first direction D1). The support member500may include a metal, a plastic or the like having relatively large elasticity or relatively large resilience. In one embodiment, for example, the support member500may include steel use stainless (“SUS”). In an embodiment, the support member500may include an alloy (for example, a super elastic metal) such as nickel-titanium (Ni—Ti), nickel-aluminum (Ni—Al), copper-zinc-nickel (Cu—Zn—Ni), copper-aluminum-nickel (Cu—Al—Ni), copper-aluminum-manganese (Cu—Al—Mn), titanium-nickel-copper-molybdenum (Ti—Ni—Cu—Mo), cobalt-nickel-gallium:iron (Co—Ni—Ga:Fe), silver-nickel (Ag—Ni), gold-cadmium (Au—Cd), iron-platinum (Fe—Pt), iron-nickel (Fe—Ni), and indium-cadmium (In—Cd). In an embodiment, each of the openings535may have a rectangular plane shape, but the shape thereof is not limited thereto. In one alternative embodiment, for example, each of the openings535may have a triangular plane shape, a rhombus plane shape, a polygonal plane shape, a circular plane shape, a track plane shape, or an oval plane shape. In an embodiment, the primer coating layer415may be disposed on the top surface of the support member500and the side walls of the support member500defined by openings535and the side wall of each of the trenches520. In such an embodiment, the primer coating layer415may be coated with a relatively thin thickness along a profile of the top surface of the support member500, and may be disposed on the entire portion of the support member500. In an embodiment, a thickness of the primer coating layer415may be smaller than a thickness of the shock absorbing member410. In one embodiment, for example, the thickness of the primer coating layer415may range from hundreds of nanometers to several angstroms. In such an embodiment, the primer coating layer415may have a thin film (or ultra-thin film) shape. In such an embodiment, where the primer coating layer415has the thin film shape, the primer coating layer415may not completely fill the openings535and the trenches520even when the primer coating layer415is disposed on the side walls (for example, the side wall of the support member500and the side wall of the trench520). In such an embodiment, the shock absorbing member410is disposed in the openings535and the trench520on the primer coating layer415, so that the shock absorbing member410may completely fill the openings535and the trench520. In an embodiment, the primer coating layer415may have a relatively low molecular weight. In an embodiment, the primer coating layer415may be disposed to improve the adhesion between the support member500and the shock absorbing member410. The primer coating layer415may include at least one selected from a urethane-based primer coating layer, an acrylic-based primer coating layer, an acrylic-urethane-based primer coating layer and a vinyl-based coating layer, for example. In an embodiment, the primer coating layer415may be a urethane-based primer coating layer, and the primer coating layer415may include polyisocyanate, polyol, or the like. In one embodiment, for example, the shock absorbing member410includes a polyurethane (“PU”), and the primer coating layer415may include polyisocyanate, polyol or the like that are constituent materials of PU. In such an embodiment, constituent materials of the primer coating layer415may be determined based on or selected from constituent materials of the shock absorbing member410. In an alternative embodiment, a thin film layer may be formed on the top surface of the support member500or the roughness of the top surface of the support member500may be changed by performing a plasma treatment process, an anodizing treatment process, a polishing treatment process, or the like on the top surface of the support member500instead of the primer coating layer415. The adhesive strength between the support member500and the shock absorbing member410may be improved through the above schemes. In an embodiment, the shock absorbing member410may be disposed on the primer coating layer415. In such an embodiment, the shock absorbing member410may be interposed between the primer coating layer415and the display panel200, and may be disposed on the entire portion of the primer coating layer415. In an embodiment, the shock absorbing member410may be disposed in each of the openings535, and may be in direct contact with the primer coating layer415. In one embodiment, for example, the shock absorbing member410may be filled within the primer coating layer415disposed on the side walls of the support member500. In an embodiment, the shock absorbing member410may be disposed on the trenches520and the top surface of each of the protrusions530, and the shock absorbing member410may be filled within the primer coating layer415disposed on each side wall of the trenches520. In such an embodiment, where the shock absorbing member410is filled in the openings535and the trenches520, deformations of the openings535and trenches520may be effectively prevented from exceeding an elastic limit, and foreign substances or particles may be effectively prevented from permeating the openings535and the trenches520. In an embodiment, the shock absorbing member410may protect the display panel200from an external shock. In such an embodiment, the shock absorbing member410may include a ductile material to enable the display panel200to be easily folded. In one embodiment, for example, the shock absorbing member410may include PU, polystyrene (“PS”) or the like. In an embodiment, the shock absorbing member410may include a foam-type material such as PU foam. The adhesive member205may be disposed between the display panel200and the shock absorbing member410. In an embodiment, a top surface of the adhesive member205may be in direct contact with the bottom surface of the display panel200, and a bottom surface of the adhesive member205may be in direct contact with a top surface of the shock absorbing member410. In an embodiment, the adhesive member205may bond the display panel200to the shock absorbing member410. The adhesive member205may include at least one selected from an optical clear adhesive (“OCA”), a pressure sensitive adhesive (“PSA”) and photocurable or thermosetting resin, for example. In one embodiment, for example, the adhesive may include at least one selected from polyethylene terephthalate (“PET”), polyethylene naphthalene (“PEN”), polypropylene (“PP”), polycarbonate (“PC”), PS, polysulfone (“Psul”), polyethylene (“PE”), polyphthalamide (“PPA”), polyethersulfone (“PES”), polyarylate (“PAR”), polycarbonate oxide (“PCO”) and modified polyphenylene oxide (“MPPO”). The resin of the adhesive member205may include epoxy resin, amino resin, phenol resin, urea resin, melamine resin, unsaturated polyester resin, PU resin, polyimide resin, and the like. In a conventional organic light emitting display device, the shock absorbing member410may bonded to the support member500through an adhesive member. In such a conventional organic light emitting display device, the adhesive member may not be disposed in the openings535, and the openings535may exist as empty spaces. When the foldable area20of the conventional organic light emitting display device is repeatedly folded and unfolded, portions of the adhesive member and the support member500on the foldable area20may be delaminated, thereby causing wrinkles in the foldable area20on the display panel200. In addition, when the openings535exist as empty spaces, foreign substances may permeate the openings535or a part of particles generated during forming the openings535of the support member500positioned on the foldable area20may be separated from the support member500and positioned in the openings535. The foreign substances and the particles may not escape out of the openings535. Accordingly, in such a conventional organic light emitting display device, the support member500positioned on the foldable area20may be damaged or the shape of the openings535may be deformed due to the foreign substances and the particles such that defects of the conventional organic light emitting display device may be caused in the foldable area20. An embodiment of the organic light emitting display device100according to the invention may include the primer coating layer415, so that the shock absorbing member410may be bonded to the support member500without the adhesive member. Accordingly, since the adhesive member is not included, the adhesive member and the support member500may not be delaminated, so that wrinkles may be prevented from occurring on the display panel200positioned in the foldable area20. In such an embodiment, the shock absorbing member410fills the openings535and the trenches520, so that the support member500positioned on the foldable area20may not be cut off, and foreign substances or particles may be effectively prevented from permeating the openings535and the trenches520, even when the foldable area20of the organic light emitting display device100is repeatedly folded and unfolded. FIG.6is a partial enlarged sectional view of an area ‘B’ of the organic light emitting display device ofFIG.4. Referring toFIG.6, an embodiment of the display panel200may include a substrate110, a semiconductor element250, a planarization layer270, a lower electrode290, a pixel defining layer310, a light emitting layer330, an upper electrode340, a first inorganic thin film encapsulation layer451, an organic thin film encapsulation layer452, a second inorganic thin film encapsulation layer453, or the like. In such an embodiment, the semiconductor element250may include the active layer130, the gate insulating layer150, the gate electrode170, the insulating interlayer190, the source electrode210and the drain electrode230. In an embodiment of the display panel200, the substrate110, which includes a transparent or opaque material, may be provided. The substrate110may be disposed on the adhesive member205. The substrate110may include or be formed of a transparent resin substrate. In one embodiment, for example, the transparent resin substrate may include a polyimide substrate. In casein such an embodiment, the polyimide substrate may include a first polyimide layer, a barrier film layer, a second polyimide layer, and the like. In an alternative embodiment, the substrate110may include a quartz substrate, a synthetic quartz substrate, a calcium fluoride substrate, a fluorine-doped (F-doped) quartz substrate, a soda-lime glass substrate, a non-alkali glass substrate, or the like. In an embodiment of the display panel200, the buffer layer may be disposed on the substrate110. The buffer layer may prevent metal atoms or impurities from diffusing from the substrate110to the semiconductor element250, and may enable a substantially uniform active layer to be obtained by adjusting the rate of heat transfer during a crystallization process for forming the active layer. In an embodiment, where a surface of the substrate115is not uniform, the buffer layer may serve to improve the flatness of the surface of the substrate110. Alternatively, at least two buffer layers may be provided on the substrate110, or the buffer layer may be omitted, based on a type of the substrate100. In one embodiment, for example, the buffer layer may include an organic material or an inorganic material. In an embodiment of the display panel200, the active layer130may be disposed on the substrate110. The active layer130may include a metal oxide semiconductor, an inorganic semiconductor (such as amorphous silicon and poly silicon), an organic semiconductor, or the like. The active layer130may have source and drain areas. In such an embodiment, the gate insulating layer150may be disposed on the active layer130. In one embodiment, for example, the gate insulating layer150may sufficiently cover the active layer130on the substrate110, and may have a substantially planar upper surface without generating a step around the active layer130. Alternatively, the gate insulating layer150may be disposed to have a uniform thickness along a profile of the active layer130while covering the active layer130on the substrate110. The gate insulating layer150may include a silicon compounds, a metal oxide, or the like. In one embodiment, for example, the gate insulating layer150may include at least one selected from silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), silicon oxycarbide (SiOC), silicon carbonitride (SiCN), aluminum oxide (AlO), aluminum nitride (AlN), tantalum oxide (TaO), hafnium oxide (HfO), zirconium oxide (ZrO) and titanium oxide (TiO). In an embodiment, the gate insulating layer150may have a multi-layer structure including a plurality of insulating layers. In one embodiment, for example, the insulating layers may have different thicknesses or include different materials from each other. In an embodiment of the display panel200, the gate electrode170may be disposed on the gate insulating layer150. The gate electrode170may be disposed on a portion of the gate insulating layer150below which the active layer130is positioned. The gate electrode170may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like. In one embodiment, for example, the gate electrode170may include at least one selected from gold (Au), silver (Ag), aluminum (Al), tungsten (W), copper (Cu), platinum (Pt), nickel (Ni), titanium (Ti), palladium (Pd), magnesium (Mg), calcium (Ca), lithium (Li), chromium (Cr), tantalum (Ta), molybdenum (Mo), scandium (Sc), neodymium (Nd), iridium (Ir), an alloy containing aluminum, aluminum nitride (AlN), an alloy containing silver, tungsten nitride (WN), an alloy containing copper, an alloy containing molybdenum, titanium nitride (TiN), chromium nitride (CrN), tantalum nitride (TaN), strontium ruthenium oxide (SrRuO), zinc oxide (ZnO), indium tin oxide (“ITO”), tin oxide (SnO), indium oxide (InO), gallium oxide (GaO) and indium zinc oxide (“IZO”). These materials may be used individually or in combination. In an embodiment, the gate electrode170may include a multi-layer structure including a plurality of metal layers. In one embodiment, for example, the metal layers may have different thicknesses or include different materials from each other. In an embodiment of the display panel200, an insulating interlayer190may be disposed on the gate electrode170. In one embodiment, for example, the insulating interlayer190may sufficiently cover the gate electrode170on the gate insulating layer150, and may have a substantially planar upper surface without generating a step around the gate electrode170. Alternatively, the insulating interlayer190be disposed to have a uniform thickness along a profile of the gate electrode170while covering the gate electrode170on the gate insulating layer150. The insulating interlayer190may include a silicon compounds, a metal oxide, or the like. In an embodiment, the insulating interlayer190may have a multi-layer structure including a plurality of insulating layers. In one embodiment, for example, the insulating layers may have different thicknesses or include different materials from each other. The source electrode210and the drain electrode230may be disposed on the insulating interlayer190. The source electrode210may be connected to a source area of the active layer130through a first contact hole formed by removing a first portion of the gate insulating layer150and the insulating interlayer190, and the drain electrode230may be connected to the drain area of the active layer130through a contact hole formed by removing second portions of the gate insulating layer150and the insulating interlayer190. Each of the source electrode210and the drain electrode230may include at least one selected from a metal, an alloy, a metal nitride, a conductive metal oxide and a transparent conductive material, for example. These materials may be used individually or in combination. In an embodiment, each of the source electrode210and the drain electrode230may have a multi-layer structure including a plurality of metal layers. In one embodiment, for example, the metal layers may have different thicknesses or include different materials from each other. Accordingly, a semiconductor element250including the active layer130, the gate insulating layer150, the gate electrode170, the insulating interlayer190, the source electrode210, and the drain electrode230may be disposed on the substrate110. In an embodiment, the semiconductor element250may have an upper gate structure, but the invention is not limited thereto. In one alternative embodiment, for example, the semiconductor element250may have a bottom gate structure, a double gate structure, or the like. In an embodiment, the organic light emitting display device100may include a single semiconductor element for each pixel thereof, but the invention is not limited thereto. In one alternative embodiment, for example, each pixel of the organic light emitting display device100may include at least one semiconductor element and at least one storage capacitor. The planarization layer270may be disposed on the insulating interlayer190, the source electrode210, and the drain electrode230. In one embodiment, for example, the planarization layer270may be relatively thickly arranged or have a thickness greater than a predetermined thickness, which is determined to provide a planarized surface on the insulating interlayer190, the source electrode210, and the drain electrode230. In such an embodiment, the planarization layer270may have a substantially planar top surface, and a planarization process may be additionally performed to the planarization layer270to implement the planar upper surface of the planarization layer270. In an alternative embodiment, the planarization layer270may be disposed to have a uniform thickness along profiles of the source electrode210and the drain electrode230on the insulating interlayer190. The planarization layer270may include or be formed of an organic material or an inorganic material. In an embodiment, the planarization layer270may include an organic material. In one embodiment, for example, the planarization layer270may include at least one selected from photoresist, polyacryl-based resin, polyimide-based resin, polyamide-based resin, siloxane-based resin, acryl-based resin and epoxy-based resin. The lower electrode290may be disposed on the planarization layer270. The lower electrode290may be connected to the drain electrode230through a contact hole formed by removing a part of the planarization layer270. The lower electrode290may be electrically connected to the semiconductor element250. The lower electrode290may include at least one selected from a metal, an alloy, a metal nitride, a conductive metal oxide, and a transparent conductive material, for example. These materials may be used individually or in combination. In an embodiment, the lower electrode290may have a multi-layer structure including a plurality of metal layers. In one embodiment, for example, the metal layers may have different thicknesses or include different materials from each other. The pixel defining layer310may be disposed on the planarization layer270. In one embodiment, for example, the pixel defining layer310may expose a part of the top surface of the lower electrode290while covering opposing sides of the lower electrode290. The pixel defining layer310may include or be formed of an organic material or an inorganic material. In one embodiment, for example, the pixel defining layer310may include an organic material. The light emitting layer330may be disposed on the pixel defining layer310and the lower electrode290. In an embodiment, the light emitting layer330may include or be formed using at least one of light emitting materials capable of emitting color lights (such as red light, green light, and blue light) that are corresponding to each pixel. In an alternative embodiment, the light emitting layer330may be defined by, or formed by laminating, a plurality of light emitting materials capable of generating different color light such as red light, green light and blue light, such that white light may be emitted from the light emitting layer330. In such an embodiment, a color filter may be disposed on the light emitting layer330disposed on the lower electrode290. The color filter may include at least one selected from a red color filter, a green color filter, and a blue color filter. Alternatively, the color filter may include a yellow color filter, a cyan color filter, and a magenta color filter. The color filter may include photosensitive resin or color photoresist. The upper electrode340may be disposed on the light emitting layer330and the pixel defining layer310. The upper electrode340may include at least one selected from a metal, an alloy, a metal nitride, a conductive metal oxide, and a transparent conductive material, for example. These materials may be used individually or in combination. In an embodiment, the upper electrode340may have a multi-layer structure including a plurality of layers. In one embodiment, for example, the metal layers may have different thicknesses or include different materials from each other. The first inorganic thin film encapsulation layer451may be disposed on the upper electrode340. The first inorganic thin film encapsulation layer451may be disposed to have a uniform thickness along a profile of the upper electrode340while covering the upper electrode340. In an embodiment, the first inorganic thin film encapsulation layer451may prevent the light emitting layer330from deteriorating due to the permeation of the moisture, oxygen, or the like. In such an embodiment, the first inorganic thin film encapsulation layer451may also function to protect the display panel200from the external impact. The first inorganic thin film encapsulation layer451may include a flexible inorganic material. The organic thin film encapsulation layer452may be disposed on the first inorganic thin film encapsulation layer451. The organic thin film encapsulation layer452may improve the flatness of the display panel200, and may protect the display panel200. The organic thin film encapsulation layer452may include a flexible organic material. The second inorganic thin film encapsulation layer453may be disposed on the organic thin film encapsulation layer452. The second inorganic thin film encapsulation layer453may be disposed to have a uniform thickness along the profile of the organic thin film encapsulation layer452while covering the organic thin film encapsulation layer452. The second inorganic thin film encapsulation layer453together with the first inorganic thin film encapsulation layer451may prevent the light emitting layer330from deteriorating due to the permeation of the moisture, oxygen, or the like. In addition, the second inorganic thin film encapsulation layer453may also function to protect the display panel200from the external impact, together with the first inorganic thin film encapsulation layer451and the organic thin film encapsulation layer452. The second inorganic thin film encapsulation layer453may include a flexible inorganic material. Accordingly, the display panel200, which includes the substrate110, the semiconductor element250, the planarization layer270, the lower electrode290, the pixel defining layer310, the light emitting layer330, the upper electrode340, the first inorganic thin film encapsulation layer451, the organic thin film encapsulation layer452, and the second inorganic thin film encapsulation layer453, may be defined or provided as described above. FIGS.7to13are cross-sectional views showing a method of manufacturing an organic light emitting display device according to an embodiment of the invention. Referring toFIG.7, in an embodiment of a method of manufacturing an organic light emitting display device, a display panel200may be provided. The display panel200may include a plurality of pixels, and may display an image through the pixels. In one embodiment, for example, the display panel200may have a first surface51on which the image is displayed and a second surface S2opposite to the first surface51. In such an embodiment, the display panel200may have a first side surface SS1and a second side surface SS2opposite to the first side surface SS1. In such an embodiment, the display panel200may include a display area10and a foldable area20. The display area10is an area where an image is displayed from the display panel200, and the foldable area20is an area where the display panel200is folded or unfolded. A part of the display area10may define the foldable area20. In such an embodiment, the image may also be displayed in the foldable area20. Referring toFIGS.2,5and8, in an embodiment of a method of manufacturing an organic light emitting display device, a support member500may be provided. In such an embodiment, a plurality of openings535may be formed through the support member500on the foldable area20. In an embodiment, the openings535may include openings531arranged in the first direction D1and openings532shifted in a second direction D2orthogonal to the first direction D1and arranged in the first direction D1. In such an embodiment, the support member500may further include a plurality of protrusions530protruding in the third direction D3. In such an embodiment, a space between two adjacent protrusions among the protrusions530may define a trench520. The support member500may include a metal, a plastic or the like having relatively large elasticity or relatively large resilience. In an embodiment, the support member500may be manufactured using SUS. Alternatively, the support member500may be manufactured using an alloy such as Ni—Ti, Ni—Al, Cu—Zn—Ni, Cu—Al—Ni, Cu—Al—Mn, Ti—Ni—Cu—Mo, Co—Ni—Ga:Fe, Ag—Ni, Au—Cd, Fe—Pt, Fe—Ni and In—Cd, for example. After the support member500is provided, a polyurethane coating solution may be sprayed on the entire portion of an upper side of the support member500. In one embodiment, for example, the polyurethane coating solution may be prepared using polyisocyanate, polyol, or the like. Referring toFIGS.5and9, after the polyurethane coating solution is sprayed, a primer coating layer415may be formed on the support member500. In one embodiment, for example, the primer coating layer415may be coated with a relatively thin thickness along a profile of the top surface of the support member500, and may be disposed on the entire upper portion and inner side portion of the support member500. In an embodiment, the primer coating layer415may be formed on a side wall of the support member500which define the openings535. In such an embodiment, the primer coating layer415may be coated relatively thinly on a top surface of the support member500and on a side wall533of each of the openings531and a side wall534of each of the openings532on the foldable area20. In such an embodiment, the side walls of the support member500that define the openings531and532may be defined as the side wall533of each of the openings531and the side wall534of each of the openings532. Herein, such side walls of the support member500may be inner side surfaces of the support member500, which are inner surfaces substantially parallel to a thickness direction of the support member500. In an embodiment, the primer coating layer415may also be provided or formed on a top surface of each of the protrusions530and a side wall521of each of the trenches520. In one embodiment, for example, the primer coating layer415may be disposed on the side wall521of each of the trenches520. In such an embodiment, the primer coating layer415may be relatively thinly coated on the top surface of each of the protrusions530and on the side wall521of each of the trenches520on the foldable area20. The thickness of the primer coating layer415may be in a range from hundreds of nanometers to several angstroms. In an embodiment, the primer coating layer415may have a thin film shape. Since the primer coating layer415has the thin film shape, each of the openings535and the trenches520may not be completely filled even when the primer coating layer415is disposed on the side walls. In such an embodiment, the primer coating layer415may have a relatively low molecular weight. The primer coating layer415may include at least one selected from a urethane-based primer coating layer, an acrylic-based primer coating layer, an acrylic-urethane-based primer coating layer and a vinyl-based coating layer, for example. In an embodiment, the primer coating layer415may be a urethane-based primer coating layer, and the polyurethane coating solution may be prepared using polyisocyanate, polyol or the like so that the primer coating layer415may also include polyisocyanate, polyol, or the like. In an alternative embodiment, a thin film layer may be formed on the top surface of the support member500or the roughness of the top surface of the support member500may be changed by performing a plasma treatment process, an anodizing treatment process, a polishing treatment process, or the like on the top surface of the support member500instead of the process of spraying the polyurethane coating solution. Referring toFIG.10, the support member500, on which the primer coating layer415is formed, may be positioned inside a mold630. After the support member500formed thereon with the primer coating layer415is placed, a resin foam may be sprayed onto the primer coating layer415by using a nozzle610. In an embodiment, the resin foam may include at least one selected from a polyurethane foam, a polyurethane derivative resin foam, a urea foam, a urea derivative resin foam, a polyvinyl chloride foam, a polyvinyl chloride derivative resin foam, a polypropylene foam, a polypropylene derivative resin foam, a polystyrene foam, a polystyrene derivative resin foam, a polyethylene foam, a polyethylene derivative resin foam, a polyvinyl acetate foam, a polyvinyl acetate derivative resin foam, a melamine resin foam, a melamine derivative resin foam, a phenol resin foam and a phenol derivatives resin foam, for example. In an embodiment, the resin foam may be manufactured using a polyurethane foam. Referring toFIG.11, in an alternative embodiment, the resin foam may be sprayed on the primer coating layer415while the nozzle610moves over the support member500on which the primer coating layer415is formed. Referring toFIG.12, after the resin foam is sprayed, the shock absorbing member410may be formed on the primer coating layer415. In an embodiment, the shock absorbing member410may be formed in each of the openings535, and may be in direct contact with the primer coating layer415. In one embodiment, for example, the shock absorbing member410may be filled within the primer coating layer415formed on the side walls of the support member500. In such an embodiment, the shock absorbing member410may be formed on the trenches520and the top surface of each of the protrusions530, and the shock absorbing member410may be filled within the primer coating layer415formed on each side wall of the trenches520. In an embodiment, where the resin foam is manufactured using polyurethane foam, the shock absorbing member410may include PU foam. An adhesive member205may be provided or formed on the shock absorbing member410. The adhesive member205may include at least one selected from OCA, PSA, photo-curable resin and thermosetting resin, for example. In one embodiment, for example, the adhesive may be manufactured using at least one selected from PET, PEN, PP, PC, PS, PSul, PE, PPA, PES, PAR, PCO, MPPO, and the like. The resin of the adhesive member205may be manufactured using epoxy resin, amino resin, phenol resin, urea resin, melamine resin, unsaturated polyester resin, polyurethane resin, polyimide resin, and the like. Referring back toFIG.4, the display panel200may be bonded to the adhesive member205. Accordingly, the organic light emitting display device100shown inFIGS.1to6may be manufactured. In a conventional method of manufacturing the organic light emitting display device100, the shock absorbing member410may bonded to the support member500through an adhesive member. Further, in the process of attaching the adhesive member205onto the shock absorbing member410after the shock absorbing member410is bonded to the support member500through the adhesive member, the adhesive strength of the adhesive member, which has a relatively large molecular weight and a relatively thick thickness (for example, 25 angstroms or more), is relatively small. Accordingly, before the adhesive member205is attached to the shock absorbing member410, a process of replacing a release paper of the adhesive member205(for example, a process of replacing a heavy liner with an easy liner) may be performed. When the adhesive member205is attached onto the shock absorbing member410without the process of replacing the release paper, the adhesive member or the shock absorbing member410may be delaminated from the support member500during removing the release paper attached onto the top surface of the adhesive member205. Accordingly, when the process of replacing the release paper is performed, manufacturing process steps may be increased, and manufacturing costs may also be increased. In an embodiment of the method of manufacturing the organic light emitting display device100according to the invention, the primer coating layer415instead of the adhesive member is formed on the support member500, so that the adhesive strength between the support member500and the shock absorbing member410may be relatively increased. Accordingly, the adhesive member205may be effectively attached onto the shock absorbing member410without the process of replacing the release paper. Thus, the manufacturing process steps of the organic light emitting display device100may be reduced, and the manufacturing costs of the organic light emitting display device100may be reduced. FIG.14is a sectional view showing the organic light emitting display device according to an alternative embodiment of the invention. The organic light emitting display device700illustrated inFIG.14may have substantially the same or similar configuration as the organic light emitting display device100described above with reference toFIGS.1to6, except for a shape of the support member500. The same or like elements shown inFIG.14have been labeled with the same reference characters as used above to describe the embodiments of the organic light emitting display device100shown inFIGS.1to6, and any repetitive detailed description thereof will hereinafter be omitted or simplified. Referring toFIG.14, an embodiment of the organic light emitting display device700may include a display panel200, an adhesive member205, a shock absorbing member410, a primer coating layer415, a support member500, and the like. The organic light emitting display device700may include a display area10and a foldable area20. The display area10is an area where an image is displayed from the display panel200, and the foldable area20is an area in which the organic light emitting display device700is folded or unfolded. A part of the display area10may define the foldable area20. In such an embodiment, the image may also be displayed in the foldable area20. In an embodiment, as shown inFIGS.2and5, a plurality of openings535, a plurality of protrusions530, and a plurality of trenches520may be defined or formed in the support member500. In such an embodiment, the width of the foldable area20in the first direction D1may be substantially narrower than those shown inFIG.14. In the drawings, the width is shown relatively wide for convenience of illustration and description. The support member500may be disposed on a bottom surface of the display panel200. In an embodiment, the support member500may be disposed on the second surface S2of the display panel200, and a plurality of openings535may be defined or formed through the support member500on the foldable area20. In an embodiment, the openings535may include openings531arranged in the first direction D1and openings532shifted in a second direction D2orthogonal to the first direction D1and arranged in the first direction D1. In an embodiment, the support member500may further include a plurality of protrusions530protruding in the third direction D3. In an embodiment, a space between two adjacent protrusions among the protrusions530may define a trench520. In an embodiment, as shown inFIG.14, the number of openings535and/or the number of trenches520formed in the support member500ofFIG.14may be relatively small, and each width of the openings535, each width of the protrusions530, and each width of the trenches520may be relatively large, when compared with the embodiments shown inFIG.4. In a case where a precision etching process is performed to form the openings535and the trenches520having relatively small widths in the support member500of the organic light emitting display device100, the yield may be reduced due to the precise etching process. In an embodiment of the organic light emitting display device700according to the invention, the shock absorbing member410may be filled in the openings535and the trenches520, so that deformations of the openings535and trenches520may be effectively prevented from exceeding an elastic limit. Accordingly, each width of the openings535, each width of the protrusions530, and each width of the trenches520may be manufactured to be relatively large, and the precision etching process may not be performed. FIG.15is a cross-sectional view showing the organic light emitting display device according to another alternative embodiment of the invention. The organic light emitting display device800illustrated inFIG.15may have substantially the same or similar configuration as the organic light emitting display device100described with reference toFIGS.1to6, except for a second adhesive member425, a third adhesive member436, a fourth adhesive member437, an elastic member430, a step compensation member460, and a metal member705. The same or like elements shown inFIG.15have been labeled with the same reference characters as used above to describe the embodiments of the organic light emitting display device100shown inFIGS.1to6, and any repetitive detailed description thereof will hereinafter be omitted or simplified. Referring toFIG.15, an embodiment of the organic light emitting display device800may include a display panel200, a first adhesive member205, a shock absorbing member410, a primer coating layer415, a support member500, a second adhesive member425, a third adhesive member436, a fourth adhesive member437, an elastic member430, a step compensation member460, a metal member705, and the like. The organic light emitting display device800may include a display area10and a foldable area20. In such an embodiment, as shown inFIGS.2and5, a plurality of openings535, a plurality of protrusions530, and a plurality of trenches520may be defined or formed in the support member500. In such an embodiment, as shown inFIG.15, the step compensation member460may include a first step compensation member461and a second step compensation member462. The metal member705may include a first metal member710and a second metal member720. The elastic member430may be disposed on a part of the bottom surface of the support member500. In an embodiment, the elastic member430may be disposed to overlap the openings535and the trenches520on the foldable area20on the bottom surface of the support member500. While the organic light emitting display device800is repeatedly folded and unfolded, the elastic member430may be stretched and contracted. The elastic member430may include elastomer having a relatively large elastic force or relatively large restoring force. In one embodiment, for example, the elastic member430may include an elastic material such as silicone, urethane, and thermoplastic polyurethane (“TPU”). The second adhesive member425may be disposed between the support member500and the elastic member430. In an embodiment, a top surface of the second adhesive member425may be in direct contact with the primer coating layer415, the shock absorbing member410and the bottom surface of the support member500, and a bottom surface of the second adhesive member425may be in direct contact with the top surface of the elastic member430. In such an embodiment, the second adhesive member425may cover the openings535. The second adhesive member425may bond the elastic member430onto the bottom surface of the support member500. In such an embodiment, while the organic light emitting display device800is repeatedly folded and unfolded, the second adhesive member425may be stretched and contracted. The second adhesive member425may include at least one selected from OCA, PSA, photo-curable resin and thermosetting resin, for example. In one embodiment, for example, the adhesive may include at least one selected from PET, PEN, PP, PC, PS, PSul, PE, PPA, PES, PAR, PCO and MPPO. The resin of the second adhesive member425may include at least one selected from epoxy resin, amino resin, phenol resin, urea resin, melamine resin, unsaturated polyester resin, polyurethane resin and polyimide resin, for example. The metal member705may be disposed on the bottom surface of the elastic member430. In one embodiment, for example, the first metal member710may be disposed on a first portion of the bottom surface of the elastic member430, and the second metal member720may be disposed on a second portion on the bottom surface of the elastic member430. Each of the first and second portions of the elastic member430may partially overlap the foldable area20. In an embodiment, the first metal member710and the second metal member720may be spaced apart from each other in the first direction D1. The spaced distance may be determined based on the radius of curvature of the foldable area20. In an embodiment, the metal member705may prevent the display panel200from sagging in the foldable area20, and may serve to shield static electricity, electromagnetic waves, electric fields, magnetic fields, and the like, which may be generated from the outside. In an embodiment, the metal member705may include SUS. Alternatively, the metal member705may include at least one selected from Au, Ag, Al, W, Cu, Pt, Ni, Ti, Pd, Mg, Ca, Li, Cr, Ta, Mo, Sc, Nd, Ir, an alloy containing aluminum, AlN, an alloy containing silver, WN, an alloy containing copper, an alloy containing molybdenum, TiN, CrN, TaN, SrRuO, ZnO, ITO, SnO, InO, GaO and IZO, for example. These materials may be used individually or in combination. In an alternative embodiment, a step compensation member and an adhesive member may be additionally disposed on the bottom surface of the metal member705. The adhesive member may be in contact with a set member surrounding the organic light emitting display device800, and the step compensation member together with the metal member705may prevent the display panel200from sagging in the foldable area20. The third adhesive member436may be disposed between the first metal member710and the elastic member430. In an embodiment, a top surface of the third adhesive member436may be in direct contact with the elastic member430, and a bottom surface of the third adhesive member436may be in direct contact with the first metal member710. The third adhesive member436may bond the first metal member710to the first portion on the bottom surface of the elastic member430. The fourth adhesive member437may be disposed between the second metal member720and the elastic member430. In an embodiment, a top surface of the fourth adhesive member437may be in direct contact with the elastic member430, and a bottom surface of the fourth adhesive member437may be in direct contact with the second metal member720. In an embodiment, the third adhesive member436and the fourth adhesive member437may be spaced apart from each other in the first direction D1. The fourth adhesive member437may bond the second metal member720to the second portion on the bottom surface of the elastic member430. Each of the third adhesive member436and the fourth adhesive member437may include at least one selected from OCA, PSA, photo-curable resin and thermosetting resin, for example. The step compensation member460may be spaced apart from the second adhesive member425, the elastic member430, the third adhesive member436, the fourth adhesive member437, and the metal member705on the bottom surface of the support member500. In one embodiment, for example, the first step compensation member461may be disposed on a first portion of the bottom surface of the support member500, and the second step compensation member462may be disposed on a second portion on the bottom surface of the support member500. In an embodiment, the bottom surface of the step compensation member460and the bottom surface of the metal member705may be positioned at a same level as each other or on a same plane. The step compensation member460may prevent the display panel200from sagging in a portion where the metal member705is not disposed. The step compensation member460may include at least one selected from PET, PEN, PP, PC, PS, PSul, PE, PPA, PES, PAR, PCO and MPPO, for example. In an embodiment, an adhesive member may be additionally disposed on the bottom surface of the step compensation member460. The adhesive member may be in contact with the set member surrounding the organic light emitting display device800. An embodiment of the organic light emitting display device800according to the invention may include the metal member705, so that the display panel200may be prevented from sagging in the foldable area20, and static electricity, electromagnetic waves, electric fields, magnetic fields, and the like generated from the outside may be shielded. Embodiments of the invention may be applied to various electronic devices including an organic light emitting display device, e.g., vehicle-display device, a ship-display device, an aircraft-display device, portable communication devices, display devices for display or for information transfer, a medical-display device, etc. The invention should not be construed as being limited to the embodiments set forth herein. Rather, these exemplary embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concept of the invention to those skilled in the art. While the invention has been particularly shown and described with reference to embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit or scope of the invention as defined by the following claims. | 59,144 |
11943997 | DESCRIPTION OF EMBODIMENTS The polymer according to one embodiment of the present invention and the composition for an organic electroluminescent element that contains the polymer, which is another embodiment, as well as embodiments of an organic electroluminescent element including a layer formed from the composition, an organic EL display device that includes the organic electroluminescent element, an organic EL lighting that includes the organic electroluminescent element, and a method of producing the organic electroluminescent element will now be described in detail; however, the following descriptions are merely examples (representative examples) of the embodiments of the present invention, and the present invention is not restricted thereto within the gist of the present invention. <Polymer> The polymer according to the first embodiment of the present invention contains a repeating unit represented by the following Formula (1) or (2). (in Formula (1),Ar1represents an aromatic hydrocarbon group optionally having a substituent, or an aromatic heterocyclic group optionally having a substituent;X represents —C(R7)(R8)—, —N(R9)—, or —C(R11)(R12)—C(R13)(R14)—;R1and R2each independently represent an alkyl group optionally having a substituent;R7to R9and R11to R14each independently represent hydrogen, an alkyl group optionally having a substituent, an aralkyl group optionally having a substituent, or an aromatic hydrocarbon group optionally having a substituent;a and b each independently represent an integer of 0 to 4, with (a+b) being 1 or larger;c represents an integer of 1 to 3;d represents an integer of 0 to 4; andwhen there are plural R1s and R2s in the repeating unit, the R1s and the R2s are optionally the same or different). The reason why the polymer of the present invention that contains the repeating unit represented by Formula (1) exerts the above-described effects is not clear; however, it is presumed as follows. In the polymer of the present invention that contains the repeating unit represented by Formula (1), a fluorene ring, a carbazole ring or a dihydrophenanthrene skeleton contained in the main chain has a phenylene group that is bound to at least either one of the 2-position and the 7-position. A phenylene bound to at least either one of the 2-position and the 7-position of the fluorene ring, the carbazole ring or the dihydrophenanthrene structure makes the fluorene ring, the carbazole ring or the dihydrophenanthrene structure more electrically stable. Particularly, it is believed that the electron durability is improved and the working life of the element is thus extended. In this case, when the phenylene ring has a substituent, due to steric hinderance caused by the substituent, the phenylene ring has a greater distortion with the adjacent fluorene ring, carbazole ring or dihydrophenanthrene skeleton as compared to a case where the phenylene ring is unsubstituted. The polymer of the present invention has a main chain structure in which expansion of 7-conjugated system is inhibited by the steric hindrance caused by the substituent; therefore, the polymer of the present invention has a high excited singlet energy level (S1) and a high excited triplet energy level (T1), and exhibits an excellent luminous efficiency since quenching caused by energy transfer from a light-emitting exciton is inhibited. Particularly, because of the high excited triplet energy level (T1), an excellent effect is obtained when a light-emitting layer contains a phosphorescent material that emits light from an excited triplet energy level (T1). Moreover, the fluorene ring, the carbazole ring or the dihydrophenanthrene skeleton, which is a polycyclic structure, has a high electron acceptability and LUMO is likely to be distributed therein; however, because of the distorted structure, LUMO is not distributed to the vicinity of the nitrogen atom that is weak against electrons and excitons, so that excellent durability is attained. (in Formula (2),Ar2represents an aromatic hydrocarbon group optionally having a substituent, or an aromatic heterocyclic group optionally having a substituent;R3and R6each independently represent an alkyl group optionally having a substituent;R4and R5each independently represent an alkyl group, an alkoxy group or an aralkyl group, which optionally has a substituent;l represents 0 or 1;m represents 1 or 2;n represents 0 or 1;p represents 0 or 1;q represents 0 or 1; andp and q are not 0 simultaneously). It is noted here that the above-described Formula (2) and the following Formula (2′) are substantially the same and, since R3and R6are defined by the same structure, the above-described Formula (2) and the following Formula (2″) are also substantially the same. The polymer containing the repeating unit represented by Formula (2) has an alkyl group, an alkoxy group, or an aralkyl group on the phenylene groups of the main chain; therefore, the polymer has a more distorted structure as compared to a case where the phenylenes of the main chain are linked in an unsubstituted state. Such a structure in which the phenylenes linked in the main chain are more distorted has a high excited singlet energy level (S1) and, when the polymer of the present invention that contains the repeating unit represented by Formula (2) is used as a charge transport layer adjacent to a light-emitting layer, quenching caused by energy transfer thereto from an exciton of the adjacent light-emitting material is inhibited, so that excellent luminous efficiency is attained. Further, in the structure in which the phenylenes linked in the main chain are more distorted, a change in the molecular conformation is unlikely to occur, and the energy difference between an excited triplet level (T1) and an excited singlet level (S1), which involves a conformational change, is thus small; therefore, usually, the excited triplet level (T1) which is lower than the excited singlet level (S1) is close to the excited singlet level (S1) and energetically high. Accordingly, particularly when the light-emitting layer emits light from this excited triplet energy level (T1), quenching caused by energy transfer from an exciton of the light-emitting material is further inhibited, so that excellent luminous efficiency is attained. Moreover, even when the excited exciton has an energy level lower than the excited singlet level (S1), a change in the molecular conformation causes hardly any thermal consumption of the energy of the exciton. The “repeating unit represented by Formula (1)” and the “repeating unit represented by Formula (2)” will now be described in detail. [Repeating Unit Represented by Formula (1)] (R1and R2) In the repeating unit represented by Formula (1), R1and R2each independently represent a linear, branched or cyclic alkyl group optionally having a substituent. The number of carbon atoms of the alkyl group is not particularly restricted; however, in order to maintain the solubility of the polymer, it is preferably 1 to 8, more preferably 6 or less, still more preferably 3 or less, and the alkyl group is yet still more preferably a methyl group or an ethyl group. When there are plural R1s and R2s in the repeating unit, the R1s and the R2s are optionally the same or different; however, all of the R1s and R2s are preferably the same groups since this allows a charge to be distributed uniformly around the nitrogen atom and makes the synthesis easy. (R7to R9and R11to R14) R7to R9and R11to R14each independently represent an alkyl group optionally having a substituent, an aralkyl group optionally having a substituent, or an aromatic hydrocarbon group optionally having a substituent. The alkyl group is not particularly restricted; however, the number of carbon atoms thereof is preferably 1 to 24, more preferably 8 or less, still more preferably 6 or less, since the solubility of the polymer tends to be thereby improved. The alkyl group may have a linear, branched, or cyclic structure. Specific examples of the alkyl group include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, a sec-butyl group, a tert-butyl group, an n-hexyl group, an n-octyl group, a cyclohexyl group, and a dodecyl group. The aralkyl group is not particularly restricted; however, the number of carbon atoms thereof is preferably 5 to 60, more preferably 40 or less, since the solubility of the polymer tends to be thereby improved. Specific examples of the aralkyl group include a 1,1-dimethyl-1-phenylmethyl group, a 1,1-di(n-butyl)-1-phenylmethyl group, a 1,1-di(n-hexyl)-1-phenylmethyl group, a 1,1-di(n-octyl)-1-phenylmethyl group, a phenylmethyl group, a phenylethyl group, a 3-phenyl-1-propyl group, a 4-phenyl-1-n-butyl group, a 1-methyl-1-phenylethyl group, a 5-phenyl-1-n-propyl group, a 6-phenyl-1-n-hexyl group, a 6-naphthyl-1-n-hexyl group, a 7-phenyl-1-n-heptyl group, a 8-phenyl-1-n-octyl group, and a 4-phenylcyclohexyl group. The aromatic hydrocarbon group is not particularly restricted; however, the number of carbon atoms thereof is preferably 6 to 60, more preferably 30 or less, since the solubility of the polymer tends to be thereby improved. Specific examples of the aromatic hydrocarbon group include 6-membered monocyclic or 2- to 5-fused-ring monovalent groups, and groups constituted by a plurality of such monovalent groups that are linked together, such as a benzene ring, a naphthalene ring, an anthracene ring, a phenanthrene ring, a perylene ring, a tetracene ring, a pyrene ring, a benzopyrene ring, a chrysene ring, a triphenylene ring, an acenaphthene ring, a fluoranthene ring, and a fluorene ring. From the standpoint of improving the charge transportability and the durability, R7and R8are each preferably a methyl group or an aromatic hydrocarbon group, R7and R8are more preferably methyl groups and R9is more preferably a phenyl group. From the standpoint of attaining excellent charge transportability while improving the solubility, R3and R4are each preferably an alkyl group having 3 to 6 carbon atoms, or an aralkyl group having 9 to 40 carbon atoms. The alkyl group of R1and R2as well as the alkyl group, aralkyl group and aromatic hydrocarbon group of R7to R9and R11to R14optionally have a substituent. Examples of the optional substituent include those groups that are exemplified above as preferred for the alkyl group, aralkyl group and aromatic hydrocarbon group of R7to R9and R11to R14, and the below-described crosslinkable group. From the standpoint of voltage reduction, it is most preferred that the alkyl group of R1and R2as well as the alkyl group, aralkyl group and aromatic hydrocarbon group of R7to R9and R11to R14have no substituent. Further, from the standpoint of insolubilization, the alkyl group, aralkyl group and aromatic hydrocarbon group of R7to R9and R11to R14preferably contain at least one of the below-described crosslinkable group as a substituent. (a, b, c and d) In the repeating unit represented by Formula (1), a and b are each independently an integer of 0 to 4, and (a+b) is 1 or larger. It is preferred that a and b be each 2 or smaller, and it is more preferred that a and b be both 1. In the repeating unit represented by Formula (1), c is an integer of 1 to 3, and d is an integer of 0 to 4. It is preferred that c and d be each 2 or smaller, it is more preferred that c and d be the same, and it is still more preferred that c and d be both 1 or 2. In the repeating unit represented by Formula (1), when c and d are both 1 or 2 and a and b are both 2 or 1, it is most preferred that R1and R2be bound at positions symmetrical to each other. The phrase “R1and R2are bound at positions symmetrical to each other” means that the binding positions of R1and R2are symmetrical about a fluorene ring or a carbazole ring in Formula (1). In this case, structures that are rotated by 180° about a main chain are regarded as the same structure. For example, in Formula (1a), R1aand R2aare symmetrical and R1band R2bare symmetrical; therefore, Formula (1a) and Formula (1b) are regarded as the same structure. (Ar1) In the repeating unit represented by Formula (1), Ar1represents an aromatic hydrocarbon group optionally having a substituent, or an aromatic heterocyclic group optionally having a substituent, and at least one Ar1is preferably a group represented by the below-described Formula (10). The aromatic hydrocarbon group preferably has 6 to 60 carbon atoms, and specific examples of the aromatic hydrocarbon group include 6-membered monocyclic or 2- to 5-fused-ring monovalent groups, and groups constituted by a plurality of such monovalent groups that are linked together, such as a benzene ring, a naphthalene ring, an anthracene ring, a phenanthrene ring, a perylene ring, a tetracene ring, a pyrene ring, a benzopyrene ring, a chrysene ring, a triphenylene ring, an acenaphthene ring, a fluoranthene ring, and a fluorene ring. For example, a “benzene-ring monovalent group” means a “benzene ring having a free valence of one”, namely a phenyl group. The aromatic heterocyclic group preferably has 3 to 60 carbon atoms, and specific examples of the aromatic heterocyclic group include 5- or 6-membered monocyclic or 2- to 4-fused-ring monovalent groups, and groups constituted by a plurality of such monovalent groups that are linked together, such as a furan ring, a benzofuran ring, a thiophene ring, a benzothiophene ring, a pyrrole ring, a pyrazole ring, an imidazole ring, an oxadiazole ring, an indole ring, a carbazole ring, a pyrroloimidazole ring, a pyrrolopyrazole ring, a pyrrolopyrrole ring, a thienopyrrole ring, a thienothiophene ring, a furopyrrole ring, a furofuran ring, a thienofuran ring, a benzisoxazole ring, a benzisothiazole ring, a benzimidazole ring, a pyridine ring, a pyrazine ring, a pyridazine ring, a pyrimidine ring, a triazine ring, a quinoline ring, an isoquinoline ring, a cinnoline ring, a quinoxaline ring, a phenanthridine ring, a perimidine ring, a quinazoline ring, and a quinazolinone ring. From the standpoint of attaining excellent charge transportability and excellent durability, Ar1is preferably an aromatic hydrocarbon group optionally having a substituent, more preferably a benzene-ring or fluorene-ring monovalent group optionally having a substituent, namely a phenyl or fluorenyl group optionally having a substituent, still more preferably a fluorenyl group optionally having a substituent, particularly preferably a 2-fluorenyl group optionally having a substituent. The optional substituent of the aromatic hydrocarbon group or aromatic heterocyclic group of Ar1is not particularly restricted as long as it does not markedly deteriorate the properties of the polymer. The optional substituent is preferably, for example, a group selected from the below-described substituents Z and the below-described crosslinkable group, more preferably an alkyl group, an alkoxy group, an aromatic hydrocarbon group, an aromatic heterocyclic group or any of the below-described crosslinkable group, still more preferably an alkyl group. From the standpoint of the solubility in coating solvents, Ar1is preferably a fluorenyl group substituted with an alkyl group having 1 to 24 carbon atoms, particularly preferably a 2-fluoroenyl group substituted with an alkyl group having 4 to 12 carbon atoms. Ar1is also preferably a 9-alkyl-2-fluorenyl group which is a 2-fluorenyl group substituted with an alkyl group at the 9-position, particularly preferably a 9,9-dialkyl-2-fluorenyl group substituted with two alkyl groups. When Ar1is a fluorenyl group in which at least one of the 9-position and the 9′-position is substituted with an alkyl group, the solubility in solvents and the durability of the fluorene ring tend to be improved. Moreover, when Ar1is a fluorenyl group in which both of the 9-position and the 9′-position are substituted with an alkyl group, the solubility in solvents and the durability of the fluorene ring tend to be further improved. From the standpoint of the solubility in coating solvents, Ar1is also preferably a spirobifluorenyl group. [Substituents Z] The substituents Z are a group consisting of alkyl groups, alkenyl groups, alkynyl groups, alkoxy groups, aryloxy groups, heteroaryloxy groups, alkoxycarbonyl groups, dialkylamino groups, diarylamino groups, arylalkylamino groups, acyl groups, halogen atoms, haloalkyl groups, alkylthio groups, arylthio groups, silyl groups, siloxy groups, a cyano group, aromatic hydrocarbon groups, and aromatic heterocyclic groups. These substituents may contain a linear, branched, or cyclic structure. More specific examples of the substituents Z include the following structures:linear, branched, or cyclic alkyl groups having usually 1 or more, preferably 4 or more, but usually 24 or less, preferably 12 or less, more preferably 8 or less, still more preferably 6 or less carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, a sec-butyl group, a tert-butyl group, an n-hexyl group, a cyclohexyl group, and a dodecyl group;linear, branched, or cyclic alkenyl groups having usually 2 or more, but usually 24 or less, preferably 12 or less carbon atoms, such as a vinyl group;linear or branched alkynyl groups having usually 2 or more, but usually 24 or less, preferably 12 or less carbon atoms, such as an ethynyl group;alkoxy groups having usually 1 or more, but usually 24 or less, preferably 12 or less carbon atoms, such as a methoxy group and an ethoxy group;aryloxy groups and heteroaryloxy groups having usually 4 or more, preferably 5 or more, but usually 36 or less, preferably 24 or less carbon atoms, such as a phenoxy group, a naphthoxy group, and a pyridyloxy group;alkoxycarbonyl groups having usually 2 or more, but usually 24 or less, preferably 12 or less carbon atoms, such as a methoxycarbonyl group and an ethoxycarbonyl group;dialkylamino groups having usually 2 or more, but usually 24 or less, preferably 12 or less carbon atoms, such as a dimethylamino group and a diethylamino group;diarylamino groups having usually 10 or more, preferably 12 or more, but usually 36 or less, preferably 24 or less carbon atoms, such as a diphenylamino group, a ditolylamino group, and an N-carbazolyl group;arylalkylamino groups having usually 7 or more, but usually 36 or less, preferably 24 or less carbon atoms, such as a phenylmethylamino group;acyl groups having usually 2 or more, but usually 24 or less, preferably 12 or less carbon atoms, such as an acetyl group and a benzoyl group;halogen atoms, such as a fluorine atom and a chlorine atom;haloalkyl groups having usually 1 or more, but usually 12 or less, preferably 6 or less carbon atoms, such as a trifluoromethyl group;alkylthio groups having usually 1 or more, but usually 24 or less, preferably 12 or less carbon atoms, such as a methylthio group and an ethylthio group;arylthio groups having usually 4 or more, preferably 5 or more, but usually 36 or less, preferably 24 or less carbon atoms, such as a phenylthio group, a naphthylthio group, and a pyridylthio group;silyl groups having usually 2 or more, preferably 3 or more, but usually 36 or less, preferably 24 or less carbon atoms, such as a trimethylsilyl group and a triphenylsilyl group; siloxy groups having usually 2 or more, preferably 3 or more, but usually 36 or less, preferably 24 or less carbon atoms, such as a trimethylsiloxy group and a triphenylsiloxy group;a cyano group;aromatic hydrocarbon groups having usually 6 or more, but usually 36 or less, preferably 24 or less carbon atoms, such as a phenyl group and a naphthyl group; andaromatic heterocyclic groups having usually 3 or more, preferably 4 or more, but usually 36 or less, preferably 24 or less carbon atoms, such as a thienyl group and a pyridyl group. The above-described substituents may contain a linear, branched, or cyclic structure. Among the substituents Z, alkyl groups, alkoxy groups, aromatic hydrocarbon groups, and aromatic heterocyclic groups are preferred. From the standpoint of the charge transportability, it is more preferred that Z have no substituent. The substituents Z may each further have a substituent. Examples of this substituent include the same ones as those exemplified above (substituents Z) and the below-described crosslinkable group. It is preferred that the substituents Z have no further substituent, or have an alkyl group having 8 or less carbon atoms, an alkoxy group having 8 or less carbon atoms, a phenyl group or any of the below-described crosslinkable group, and it is more preferred that the substituents Z each have an alkyl group having 6 or less carbon atoms, an alkoxy group having 6 or less carbon atoms, a phenyl group, or any of the below-described crosslinkable group. From the standpoint of the charge transportability, it is still more preferred that the substituents Z have no further substituent. From the standpoint of insolubilization, the polymer of the present invention preferably contains the repeating unit represented by Formula (1) that contains at least one of the below-described crosslinkable group as a further substituent, and this crosslinkable group is preferably further substituted with a substituent that is optionally contained in the aromatic hydrocarbon group or aromatic heterocyclic group represented by Ar1. (Other Preferred Ar1) In the repeating unit represented by Formula (1), at least one Ar1is also preferably a group represented by the following Formula (10). It is believed that LUMO is distributed in an aromatic hydrocarbon group or an aromatic heterocyclic group between the nitrogen atoms of two carbazole structures in Formula (10), whereby the durability against electrons and excitons tends to be improved. (wherein,Ar11and Ar12each independently represent a divalent aromatic hydrocarbon group optionally having a substituent, or a divalent aromatic heterocyclic group optionally having a substituent; andAr13to Ar15each independently represent a hydrogen atom or a substituent) (Ar13to Ar15) Ar13to Ar15each independently represent a hydrogen atom or a substituent. When Ar13to Ar15are substituents, the substituents are not particularly restricted; however, they are each preferably an aromatic hydrocarbon group optionally having a substituent, or an aromatic heterocyclic group optionally having a substituent. Preferred structures of these substituents are the same as those of the groups exemplified above for Ar. When Ar13to Ar15are substituents, from the standpoint of improving the durability, the substituents are preferably bound at the 3- or 5-position of each carbazole. From the standpoints of the ease of synthesis and the charge transportability, Ar13to Ar15are preferably hydrogen atoms. From the standpoint of improving the durability and the charge transportability, Ar13to Ar15are each preferably an aromatic hydrocarbon group optionally having a substituent, or an aromatic heterocyclic group optionally having a substituent, more preferably an aromatic hydrocarbon group optionally having a substituent. When Ar13to Ar15are each an aromatic hydrocarbon group optionally having a substituent, or an aromatic heterocyclic group optionally having a substituent, examples of the substituent are the same as those exemplified above as the substituents Z and the below-described crosslinkable group, and preferred substituents and substituents that may be further contained therein are also the same. Further, from the standpoint of insolubilization, the polymer of the present invention preferably contains a group represented by Formula (10) that contains at least one of the below-described crosslinkable group as a substituent. (Ar12) Ar12is a divalent aromatic hydrocarbon group optionally having a substituent, or a divalent aromatic heterocyclic group optionally having a substituent. The aromatic hydrocarbon group has preferably 6 to 60 carbon atoms, more preferably 10 to 50 carbon atoms, particularly preferably 12 to 40 carbon atoms. Specific examples of the aromatic hydrocarbon group include 6-membered monocyclic or 2- to 5-fused-ring divalent groups, and groups constituted by a plurality of such divalent groups that are linked together, such as a benzene ring, a naphthalene ring, an anthracene ring, a phenanthrene ring, a perylene ring, a tetracene ring, a pyrene ring, a benzopyrene ring, a chrysene ring, a triphenylene ring, an acenaphthene ring, a fluoranthene ring, and a fluorene ring. When a plurality of these groups are linked together, Ar12is preferably a group in which the linked plural divalent aromatic hydrocarbon groups are conjugated with each other. The aromatic heterocyclic group preferably has 3 to 60 carbon atoms, and specific examples of the aromatic heterocyclic group include 5- or 6-membered monocyclic or 2 to 4-fused-ring divalent groups, and groups constituted by a plurality of such divalent groups that are linked together, such as a furan ring, a benzofuran ring, a thiophene ring, a benzothiophene ring, a pyrrole ring, a pyrazole ring, an imidazole ring, an oxadiazole ring, an indole ring, a carbazole ring, a pyrroloimidazole ring, a pyrrolopyrazole ring, a pyrrolopyrrole ring, a thienopyrrole ring, a thienothiophene ring, a furopyrrole ring, a furofuran ring, a thienofuran ring, a benzisoxazole ring, a benzisothiazole ring, a benzimidazole ring, a pyridine ring, a pyrazine ring, a pyridazine ring, a pyrimidine ring, a triazine ring, a quinoline ring, an isoquinoline ring, a cinnoline ring, a quinoxaline ring, a phenanthridine ring, a perimidine ring, a quinazoline ring, and a quinazolinone ring. Examples of the optional substituent of these aromatic hydrocarbon groups or aromatic heterocyclic groups include the same alkyl groups, aralkyl groups and aromatic hydrocarbon groups that are exemplified above for Ar1, and preferred ranges thereof are also the same. Ar12preferably has no substituent when the structure of Ar12is distorted by a steric effect of a substituent, while Ar12preferably has a substituent when the structure of Ar12is not distorted by a steric effect of the substituent. The specific structure is preferably a divalent group of a benzene ring, a naphthalene ring, an anthracene ring or a fluorene ring, or a group constituted by a plurality of these rings that are linked together; more preferably a divalent group of a benzene ring, or a group constituted by a plurality of benzene rings that are linked together; particularly preferably a 1,4-phenylene group in which benzene rings are linked at two positions of 1 and 4, a 2,7-fluorenylene group in which fluorene rings are linked at two positions of 2 and 7, or a group constituted by a plurality of these groups that are linked together; most preferably a group that contains -1,4-phenylene group-2,7-fluorenylene group-1,4-phenylene group-. In these preferred structures, it is preferred that the phenylene groups have no substituent except at their linking positions since this prevents Ar12from being distorted by a steric effect of a substituent. Further, from the standpoint of improving the solubility and the durability of the fluorene structures, the fluorenylene group more preferably has substituents at the 9- and 9′-positions. When Ar12has the above-described structure, the aromatic hydrocarbon group between the nitrogen atoms of two carbazole structure has a conjugated structure, so that LUMO is likely to be distributed on the conjugated aromatic hydrocarbon group. This consequently makes LUMO unlikely to expand to the vicinity of the nitrogen atom of the main chain that is weak against electrons and excitons; therefore, the durability is believed to be improved. In addition, when Ar12contains an aromatic heterocyclic group, since the electron-withdrawing nature increases and LUMO is likely to be distributed thereon, LUMO is unlikely to expand to the vicinity of the nitrogen atom of the main chain that is weak against electrons and excitons, so that the durability is believed to be improved. (Ar11) Ar11is a divalent group that is linked with the amine nitrogen atom of the main chain of Formula (1). Ar11is not particularly restricted; however, it is preferably a divalent aromatic hydrocarbon group optionally having a substituent, or a divalent aromatic heterocyclic group optionally having a substituent. The aromatic hydrocarbon group of Ar11has preferably 6 to 60 carbon atoms, more preferably 10 to 50 carbon atoms, particularly preferably 12 to 40 carbon atoms. Specific examples of the aromatic hydrocarbon group include 6-membered monocyclic or 2- to 5-fused-ring divalent groups, and groups constituted by a plurality of such divalent groups that are linked together, such as a benzene ring, a naphthalene ring, an anthracene ring, a phenanthrene ring, a perylene ring, a tetracene ring, a pyrene ring, a benzopyrene ring, a chrysene ring, a triphenylene ring, an acenaphthene ring, a fluoranthene ring, and a fluorene ring. The aromatic heterocyclic group of Ar11preferably has 3 to 60 carbon atoms. Specific examples of the aromatic heterocyclic group include 5- or 6-membered monocyclic or 2 to 4-fused-ring divalent groups, and groups constituted by a plurality of such divalent groups that are linked together, such as a furan ring, a benzofuran ring, a thiophene ring, a benzothiophene ring, a pyrrole ring, a pyrazole ring, an imidazole ring, an oxadiazole ring, an indole ring, a carbazole ring, a pyrroloimidazole ring, a pyrrolopyrazole ring, a pyrrolopyrrole ring, a thienopyrrole ring, a thienothiophene ring, a furopyrrole ring, a furofuran ring, a thienofuran ring, a benzisoxazole ring, a benzisothiazole ring, a benzimidazole ring, a pyridine ring, a pyrazine ring, a pyridazine ring, a pyrimidine ring, a triazine ring, a quinoline ring, an isoquinoline ring, a cinnoline ring, a quinoxaline ring, a phenanthridine ring, a perimidine ring, a quinazoline ring, and a quinazolinone ring. Examples of the optional substituent of these aromatic hydrocarbon groups or aromatic heterocyclic groups include the same alkyl groups, aralkyl groups and aromatic hydrocarbon groups that are exemplified above for Ar1, and preferred ranges thereof are the same as Ar12. When a plurality of these divalent aromatic hydrocarbon groups or divalent aromatic heterocyclic groups are linked together, Ar11is preferably a group in which the linked plural divalent aromatic hydrocarbon groups are bound such that they are not conjugated with each other. Specifically, Ar11preferably contains a 1,3-phenylene group, or a group that contains a substituent and has a distorted structure due to a steric effect of the substituent. By incorporating such a linking group, LUMO distributed on Ar12is made unlikely to expand to the main chain, and LUMO is thus unlikely to be distributed in the vicinity of the nitrogen atom of the main chain that is weak against electrons and excitons, so that the durability is believed to be improved. In the polymer of the present embodiment that contains the repeating unit represented by Formula (1), when there are plural Ar1s, R1s, R2s and Xs, the Ar1s, R1s, R2s and Xs may each be the same or different. Preferably, the polymer contains plural repeating units represented by Formula (1) that have the same structure. In this case, since the plural repeating units of the same structure have the same HOMO and LUMO, it is believed that an electric charge is not concentrated at a specific low level to cause a trap, so that excellent charge transportability is attained and the durability is improved. (X) From the standpoint of attaining high stability during charge transport, X in Formula (1) is preferably —C(R7)(R8)— or —N(R9)—, more preferably —C(R7)(R8)—. The repeating unit represented by Formula (1) is particularly preferably a repeating unit represented by any of the following Formulae. In the above Formulae, R1and R2are the same, and R1and R2are bound at positions symmetrical to each other. [Specific Examples of Main Chain of Repeating Unit Represented by Formula (1)] The nitrogen atom-excluding main chain structure of Formula (1) is not particularly restricted, and examples thereof include the following structures. [Content of Repeating Unit Represented by Formula (1)] In the polymer of the present embodiment, the content of the repeating unit represented by Formula (1) is not particularly restricted; however, the repeating unit represented by Formula (1) is contained in the polymer in an amount of usually not less than 10% by mole, preferably not less than 30% by mole, more preferably not less than 40% by mole, still more preferably not less than 50% by mole. In the polymer of the present invention, repeating units may consist of only the repeating unit represented by Formula (1); however, in order to attain a good balance of various performance when the polymer is used in an organic electroluminescent element, the polymer may also contain a repeating unit other than the one represented by Formula (1) and, in such a case, the content of the repeating unit represented by Formula (1) in the polymer is usually 99% by mole or less, preferably 95% by mole or less. [Terminal Group] The term “terminal group” used herein refers to a terminal structure of a polymer which is formed by an end-capping agent used at the completion of polymerizing the polymer. In the polymer of the present embodiment, a terminal group of the polymer having the repeating unit represented by Formula (1) is preferably a hydrocarbon group. From the standpoint of the charge transportability, the hydrocarbon group has preferably 1 to 60, more preferably 1 to 40, still more preferably 1 to 30 carbon atoms. Preferred examples of the hydrocarbon group include:linear, branched, or cyclic alkyl groups having usually 1 or more, preferably 4 or more, but usually 24 or less, preferably 12 or less carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, a sec-butyl group, a tert-butyl group, an n-hexyl group, a cyclohexyl group, and a dodecyl group;linear, branched, or cyclic alkenyl groups having usually 2 or more, but usually 24 or less, preferably 12 or less carbon atoms, such as a vinyl group;linear or branched alkynyl groups having usually 2 or more, but usually 24 or less, preferably 12 or less carbon atoms, such as an ethynyl group; andaromatic hydrocarbon groups having usually 6 or more, but usually 36 or less, preferably 24 or less carbon atoms, such as a phenyl group and a naphthyl group. These hydrocarbon groups may further have a substituent which is preferably an alkyl group or an aromatic hydrocarbon group and, when the hydrocarbon groups have plural substituents, the substituents are optionally bound with each other to form a ring. From the standpoint of the charge transportability and the durability, the terminal group is preferably an alkyl group or an aromatic hydrocarbon group, more preferably an aromatic hydrocarbon group. [Repeating Unit Represented by Formula (2)] (R3and R6) In the repeating unit represented by Formula (2), R3and R6each independently represent an alkyl group optionally having a substituent. Examples of the structure of the alkyl group are the same as those exemplified above for R1and R2, and examples of the optional substituent and a preferred structure thereof are also the same as those exemplified above. (R4and R5) In Formula (2), R4and R5each independently represent an alkyl group, an alkoxy group or an aralkyl group, which optionally has a substituent. The alkyl group may have a linear, branched or cyclic structure and is not particularly restricted; however, the number of carbon atoms of the alkyl group is preferably 1 to 24, more preferably 8 or less, still more preferably 6 or less, since this tends to improve the solubility of the polymer. Specific examples of the alkyl group include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, a sec-butyl group, a tert-butyl group, an n-hexyl group, an n-octyl group, a cyclohexyl group, and a dodecyl group. The alkoxy group is not particularly restricted, and the R group of the alkoxy group (—OR) may have a linear, branched or cyclic structure and has preferably 1 to 24, more preferably 12 or less carbon atoms, since this tends to improve the solubility of the polymer. Specific examples of the alkoxy group include a methoxy group, an ethoxy group, an n-propoxy group, an n-butoxy group, a hexyloxy group, a 1-methylpentyloxy group, and a cyclohexyloxy group. The aralkyl group is not particularly restricted; however, the number of carbon atoms of the aralkyl group is preferably 5 to 60, more preferably 40 or less, since this tends to improve the solubility of the polymer. Specific examples of the aralkyl group include a 1,1-dimethyl-1-phenylmethyl group, a 1,1-di(n-butyl)-1-phenylmethyl group, a 1,1-di(n-hexyl)-1-phenylmethyl group, a 1,1-di(n-octyl)-1-phenylmethyl group, a phenylmethyl group, a phenylethyl group, a 3-phenyl-1-propyl group, a 4-phenyl-1-n-butyl group, a 1-methyl-1-phenylethyl group, a 5-phenyl-1-n-propyl group, a 6-phenyl-1-n-hexyl group, a 6-naphthyl-1-n-hexyl group, a 7-phenyl-1-n-heptyl group, a 8-phenyl-1-n-octyl group, and a 4-phenylcyclohexyl group. (l, m, and n) In Formula (2), 1 represents 0 or 1, and n represents 0 or 1. The l and the n are independent to each other, and (l+n) is preferably 1 or 2, more preferably 2. By controlling (l+n) to be in this range, the solubility of the polymer of the present invention is improved, and precipitation of the composition for an organic electroluminescent element, which contains the polymer, thus tends to be inhibited. Further, m represents 1 or 2, and m is preferably 1 since this allows the organic electroluminescent element of the present invention to operate at a low voltage, and tends to improve the hole injection/transport capacity as well as the durability. (p and q) In Formula (2), p represents 0 or 1, q represents 0 or 1, and p and q are not 0 simultaneously when l=n=1. By controlling p and q not to be 0 simultaneously, the solubility of the polymer of the present invention is improved, and precipitation of the composition for an organic electroluminescent element, which contains the polymer, thus tends to be inhibited. (Ar2) In the repeating unit represented by Formula (2), Ar2represents an aromatic hydrocarbon group optionally having a substituent, or an aromatic heterocyclic group optionally having a substituent, and plural Ar2s contained in the polymer may be the same or different. Examples of the structure of the aromatic hydrocarbon group optionally having a substituent and that of the aromatic heterocyclic group optionally having a substituent are the same as those exemplified above for Ar1, and examples of the optional substituents and preferred structures thereof are also the same as those exemplified above. Ar2is also preferably a spirobifluorenyl group from the standpoint of the solubility in coating solvents. Ar2is particularly preferably a group represented by Formula (15), or a group represented by Formula (16). In Formulae (15) and (16), * represents a bond with N in Formula (2). From the standpoint of insolubilization, the polymer preferably contains, as a further substituent, the repeating unit represented by Formula (2) that contains at least one crosslinkable group described below, and the crosslinkable group preferably further substitutes a substituent that is optionally contained in the aromatic hydrocarbon group or aromatic heterocyclic group represented by Ar2. [Group Represented by Formula (10) (Group Having Biscarbazole Structure)] In the same manner as Ar1, at least one Ar2is preferably a group represented by Formula (10). When at least one Ar2is a group represented by Formula (10), preferred structures of Formula (10) and optional substituents thereof are the same as in the case where at least one Ar1is a group represented by Formula (10). [Specific Examples of Main Chain of Repeating Unit Represented by Formula (2)] The N atom-excluding main chain structure of the repeating unit represented by Formula (2) is not particularly restricted, and examples thereof include the following structures. [Content of Repeating Unit Represented by Formula (2)] In the polymer of the present embodiment, the content of the repeating unit represented by Formula (2) is not particularly restricted; however, the repeating unit represented by Formula (2) is contained in the polymer in an amount of usually not less than 10% by mole, preferably not less than 30% by mole, more preferably not less than 40% by mole, particularly preferably not less than 50% by mole. In the polymer of the present embodiment, repeating units may consist of only the repeating unit represented by Formula (2); however, in order to attain a good balance of various performance when the polymer is used in an organic electroluminescent element, the polymer may also contain a repeating unit other than the one represented by Formula (2) and, in such a case, the content of the repeating unit represented by Formula (2) in the polymer is usually 99% by mole or less, preferably 95% by mole or less. [Terminal Group] In the polymer of the present embodiment, a terminal group of the polymer having the repeating unit represented by Formula (2) is preferably a hydrocarbon group in the same manner as the terminal group of the polymer having the repeating unit represented by Formula (1). Preferred hydrocarbon groups and optional substituents thereof are also the same as those exemplified above for the terminal group of the polymer having the repeating unit represented by Formula (1). Repeating units and the like of the present embodiment other than those represented by Formula (1) or (2) will now be described. [Other Repeating Units] The polymer of the present embodiment may further contain other repeating unit in addition to the repeating unit represented by Formula (1) or (2). As the other repeating unit, from the standpoint of the charge transportability and the durability, a repeating unit represented by Formula (4) is preferred. It is noted here that the repeating unit represented by the following Formula (4) may be the same as a part of the structure of the repeating unit represented by Formula (1) or (2); however, the “repeating unit represented by Formula (4)” only means a structure other than the repeating unit represented by Formula (1) or (2). (wherein,Ar3represents an aromatic hydrocarbon group optionally having a substituent, or an aromatic heterocyclic group optionally having a substituent; andAr4represents a divalent aromatic hydrocarbon group optionally having a substituent, a divalent aromatic heterocyclic group optionally having a substituent, or a divalent group in which aromatic hydrocarbon group(s) optionally having a substituent and/or aromatic heterocyclic group(s) optionally having a substituent are linked together directly or via a linking group). (Ar3and Ar4) Examples of the aromatic hydrocarbon group and the aromatic heterocyclic group that are represented by Ar3and Ar4include: for Ar3, the same groups as those exemplified above for Ar1of Formula (1) or Ar2of Formula (2); and, for Ar4, the same groups as those exemplified above for Ar1of Formula (1) or Ar2of Formula (2), which are divalent. Further, substituent that may be contained in these groups are preferably the same as the above-described substituents Z and the below-described crosslinkable group, and substituents that may be further contained therein are the same as the above-described substituents Z. From the standpoint of attaining excellent charge transportability, excellent durability, and excellent hole injection from the anode side, Ar4is preferably a group represented by the following Formula (5). [Other Preferred Main Chain (Formula (5))] From the standpoint of attaining excellent charge transportability, excellent durability, and excellent hole injection from the anode side, the polymer of the present embodiment preferably contains a group represented by the following Formula (5). In Formula (5),i and j each independently represent an integer of 0 to 3, with (i+j) being 1 or larger;k represents an integer of 0 or 1;X is defined the same as X in the above-described repeating unit represented by Formula (1) and represents —C(R7)(R8)—, —N(R9)—, or —C(R11)(R12)—C(R13)(R14)—; andR7to R9and R11to R14are defined the same as R7to R9and R11to R14that constitute X in the above-described repeating unit represented by Formula (1), each independently representing an alkyl group optionally having a substituent, an aralkyl group optionally having a substituent, or an aromatic hydrocarbon group optionally having a substituent, and their preferred structures and optional substituents are also the same. Further, X of Formula (5) may be the same as or different from X of Formula (1). (i, j and k) In Formula (5), from the standpoint of attaining excellent electron durability, (i+j) is preferably 2 or more, more preferably 3 or more. Further, i is preferably 1 or larger, and a bond is preferably formed with N in Formula (4) via this phenylene group. It is more preferred that i and j be both 1, or that i and j be both 2 or larger. From the standpoint of allowing the polymer to have excellent solubility in solvents, k is more preferably 1. (Linking Group) The polymer of the present embodiment preferably also contains a repeating unit represented by the following Formula (6). Particularly, when plural aromatic hydrocarbon groups and aromatic heterocyclic groups are linked via a linking group in the above-described Formula (4), specific examples of the linking group include divalent linking groups in which 1 to 30, preferably 1 to 5, more preferably 1 to 3 groups selected from a —O— group, a —C(═O) group, and a —CH2— group, whose hydrogen atoms are optionally substituted, are linked in any order. From the standpoint of attaining excellent hole injection into a light-emitting layer, Ar4in Formula (4) is preferably a plurality of aromatic hydrocarbon groups or aromatic heterocyclic groups that are linked via a linking group represented by the following Formula (6). (wherein,t represents an integer of 1 to 10;R15and R16each independently represent a hydrogen atom, or an alkyl, aromatic hydrocarbon or aromatic heterocyclic group, which optionally has a substituent; andwhen there are plural R15s and R16s, the R15s and the R16s are optionally the same or different). (R15and R16) The alkyl groups represented by R15and R16are the same as the alkyl groups exemplified above for R1, R2, R3and R6, and the aromatic hydrocarbon groups and the aromatic heterocyclic groups are the same as those exemplified above for Ar1and Ar2. Further, substituent that may be contained in these groups are preferably the same as the above-described substituents Z and the below-described crosslinkable group, and substituents that may be further contained therein are the same as the above-described substituents Z. [Other Repeating Unit (2)] The other repeating unit that may be contained in the polymer of the present embodiment is preferably a repeating unit represented by the following Formula (7). The repeating unit represented by Formula (7) tends to have a high excited singlet energy level and a high excited triplet energy level because of distortion of the aromatic rings. In addition, steric hindrance caused by the distortion of the aromatic rings allows the polymer to have excellent solubility in solvents, and a coating film thereof formed by a wet film-forming method and subsequently heat-treated tends to have excellent insolubility in solvents. (wherein,Ar5represents an aromatic hydrocarbon group optionally having a substituent, or an aromatic heterocyclic group optionally having a substituent;R17to R19each independently represent an alkyl group optionally having a substituent, an alkoxy group optionally having a substituent, an aralkyl group optionally having a substituent, an aromatic hydrocarbon group optionally having a substituent, or an aromatic heterocyclic group optionally having a substituent;f, g, and h each independently represent an integer of 0 to 4, with (f+g+h) being 1 or larger; ande represents an integer of 0 to 3). (Ar5and R17to R19) The aromatic hydrocarbon groups and the aromatic heterocyclic groups that are represented by Ar5and R17to R19are each independently the same as any of the groups exemplified above for Ar1and Ar2. Further, substituent that may be contained in these groups are preferably the same as the above-described substituents Z and the below-described crosslinkable group. The alkyl groups and the aralkyl groups that are represented by R17to R19are the same as those exemplified above for R7, and substituents that may be contained in these groups are preferably the same as those exemplified above for R7. The alkoxy groups represented by R17to R19are preferably the alkoxy groups exemplified above for the substituents Z, and substituents that may be contained in these groups are also the same as the above-described substituents Z. (f, g, and h) In Formula (7), f, g, and h each independently represent an integer of 0 to 4, with (f+g+h) being 1 or larger. It is preferred that (f+h) be 1 or larger;it is more preferred that (f+h) be 1 or larger, and f, g and h be each 2 or smaller;it is still more preferred that (f+h) be 1 or larger, and f and h be each 1 or smaller; andit is most preferred that f and h be both 1. When f and h are both 1, R17and R19are preferably bound at positions symmetrical to each other. In addition, R17and R19are preferably the same. It is more preferred that g be 2. When g is 2, it is most preferred that two R8s be bound at the para-positions to each other, and that two R18s be the same. The phrase “R17and R19are bound at positions symmetrical to each other” refers to the below-described binding position. It is noted here that, in terms of notation, structures that are rotated by 180° about a main chain are regarded as the same structure. When the polymer of the present embodiment contains the repeating unit represented by Formula (7), the mole ratio of the repeating unit represented by Formula (7) and the repeating unit represented by Formula (1) (Repeating unit represented by Formula (7)/Repeating unit represented by Formula (1)) is preferably 0.1 or higher, more preferably 0.3 or higher, still more preferably 0.5 or higher, yet still more preferably 0.9 or higher, particularly preferably 1.0 or higher, but preferably 2.0 or lower, more preferably 1.5 or lower, still more preferably 1.2 or lower. The above-described repeating unit represented by Formula (4) is preferably a repeating unit represented by the following Formula (8). In the case of the repeating unit represented by Formula (8), g is preferably 0 or 2. When g=2, the binding positions are the 2-position and the 5-position. When g=0 (i.e. when there is no steric hindrance caused by R8), and when g=2 and the binding positions are the 2-position and the 5-position (i.e. when steric hindrance occurs at diagonal positions of the benzene ring to which two R18s are bound), R17and R19can be bound at positions symmetrical to each other. The repeating unit represented by Formula (8) is more preferably a repeating unit represented by the following Formula (9), wherein e=3. In the case of the repeating unit represented by Formula (9), g is preferably 0 or 2. When g=2, the binding positions are the 2-position and the 5-position. When g=0 (i.e. when there is no steric hindrance caused by R18), and when g=2 and the binding positions are the 2-position and the 5-position (i.e. when steric hindrance occurs at diagonal positions of the benzene ring to which two R18s are bound), R17and R19can be bound at positions symmetrical to each other. [Preferred Combination of Repeating Units] In the polymer of the present invention, a combination of repeating units is not particularly restricted; however, from the standpoint of improving the charge transportability and the durability, the polymer preferably has a repeating unit represented by Formula (12), which contains the repeating unit represented by Formula (1) and the repeating unit represented by Formula (4) wherein Ar4is Formula (5). In Formula (12), Ar1, Ar3, X, R1, R2, a, b, c, d, i, j, and k are each the same as in Formula (1), Formula (4), or Formula (5). Their preferred structures, ranges and the like are also the same as in Formula (1), Formula (4), or Formula (5). More preferably, c=d=i=j, and k=1. In Formula (12), when a fluorene ring, a carbazole ring or a dihydrophenanthrene skeleton that is close to the phenylenes having a substituent is denoted as “A” while a fluorene ring, a carbazole ring or a dihydrophenanthrene skeleton that is close to the phenylenes having no substituent is denoted as “B”, the A having non-conjugated bonds with amines is not conjugated with the amines; therefore, LUMO is unlikely to be distributed therein, and the durability tends to be improved. Further, since the B conjugated with an amine has a broader conjugation, the hole transportability is improved and the polymer tends to be stable. It is more preferred that X of the A and X of the B be —C(R7)(R8)—, —N(R9)—, or —C(R11)(R12)—C(R13)(R14)—. In this case, R7, R8, R9, R11, R12, R13and R14of the A and those of the B may be the same or different. When X of the A and X of the B are —C(R7)(R8)—, —N(R9)—, or —C(R11)(R12)—C(R13)(R14)—, the repeating core contained in the polymer are the same; therefore, it is believed that a level acting as a charge trap is unlikely to be generated, so that excellent charge transportability and excellent durability are attained. It is still more preferred that the A and the B be the same, it is yet still more preferred that X be —C(R3)(R4)— in both A and B, and it is particularly preferred that X of the A and X of the B be both —C(R3)(R4)— and the same. The structure of the repeating unit represented by Formula (12) is not particularly restricted, and examples thereof include the following structures. When Ar1of Formula (1) is represented by Formula (10), examples of the repeating unit represented by Formula (12) in which Ar1is the repeating unit represented by Formula (10) and which contains the repeating unit represented by Formula (4) wherein Ar4is Formula (5) include, but not particularly limited to, the following structures. [Repeating Unit in which Formula (2) and Formula (4) are Linked] In the polymer of the present embodiment, a combination of repeating units is not particularly restricted; however, from the standpoint of improving the charge transportability and the durability, the polymer preferably has a repeating unit represented by the following Formula (14) in which the repeating unit represented by Formula (2) and the repeating unit represented by Formula (4) wherein Ar4is Formula (5) are linked together. Further, when the polymer of the present embodiment contains the repeating unit represented by Formula (5), the mole ratio of the repeating unit represented by Formula (5) and the repeating unit represented Formula by (2) (Repeating unit represented by Formula (5)/Repeating unit represented by Formula (2)) is preferably 0.1 or higher, more preferably 0.3 or higher, still more preferably 0.5 or higher, yet still more preferably 0.9 or higher, particularly preferably 1.0 or higher, but preferably 2.0 or lower, more preferably 1.5 or lower, still more preferably 1.2 or lower. In Formula (14), Ar2, Ar3, X, R3, R4, R5, R6, p, q, i, j, k, l, m, and n are each the same as in Formula (2), Formula (4), or Formula (5). Their preferred structures, ranges and the like are also the same as in Formula (2), Formula (4), or Formula (5). More preferably, l=n=j=I, and k=1. In Formula (14), when a structure which is linked with phenylenes having no substituent that is close to the phenylene having a substituent with a distorted structure, or the phenylenes having a substituent is denoted as “C” while a fluorene ring, a carbazole ring or a dihydrophenanthrene skeleton that is close to the phenylenes having no substituent is denoted as “D”, the C having non-conjugated bonds with amines is not conjugated with the amines; therefore, LUMO is unlikely to be distributed therein, and the durability tends to be improved. Further, since the D conjugated with an amine has a broader conjugation, the hole transportability is improved and the polymer tends to be stable. It is more preferred that X of the D be —C(R7)(R8)—, —N(R9)—, or —C(R11)(R12)—C(R13)(R14)—. In this case, R7, R8, R9, R11, R12, R13and R14of the D may be the same or different. When X of the D is —C(R7)(R8)—, —NR9—, or —C(R11)(R12)—C(R3)(R14)—, the repeating core contained in the polymer are the same; therefore, it is believed that a level acting as a charge trap is unlikely to be generated, so that excellent charge transportability and excellent durability are attained. Preferably, Ar2and Ar3are each independently the following Formula (15) or (16). The structure represented by Formula (14) is not particularly restricted, and examples thereof include the following structures. Examples of a repeating unit that contains the repeating unit represented by Formula (2) wherein Ar2is Formula (10) and the repeating unit represented by Formula (4) wherein Ar4is Formula (5) include, but not particularly limited to, the following structures. <Polymer According to Second Embodiment of Present Invention> (Polymer Having Structure Represented by Formula (11) as Side Chain> The polymer according to a second embodiment of the present invention is, for example, a polymer having a structure represented by the following Formula (11) as a side chain. In the structure represented by Formula (11), LUMO is distributed in an aromatic hydrocarbon group or an aromatic heterocyclic group between the nitrogen atoms of two carbazole structures, whereby the durability against electrons and excitons is believed to be improved. From the above, the polymer of the present embodiment can exert a high effect when used in a layer adjacent to a light-emitting layer on the side of an anode. (wherein,Ar31represents a divalent group linked with a main chain;Ar12represents a divalent aromatic hydrocarbon group optionally having a substituent, or a divalent aromatic heterocyclic group optionally having a substituent;Ar13to Ar15each independently represent a hydrogen atom or a substituent; and* represents a position of binding with an atom constituting the main chain). Ar31represents a divalent group linked with the main chain. Ar31is not particularly restricted; however, Ar31is preferably the same as Ar11of Formula (10), and its preferred range, optional substituent and the like are also the same. Ar12to Ar15are the same as Ar12to Ar15of Formula (10), and their preferred ranges, optional substituents and the like are also the same. The above-described polymer having the structure represented by Formula (11) as a side chain is preferably a polymer having a structure represented by the following Formula (13). (wherein,Ar12to Ar15and Ar31are each the same as in Formula (11); andAr16represents a structure constituting the main chain of the polymer). (Ar16) Ar16is preferably the same as Ar4of Formula (4), more preferably the same as Formula (5). <Other> Preferred modes and the like that are common to the first and the second embodiments will now be described. [Soluble Group] The polymers according to the first and the second embodiments of the present invention preferably have a soluble group for exhibiting a solubility in a solvent. The soluble group in the present invention is a group containing a linear or branched alkyl or alkylene group, which has 3 to 24 carbon atoms, preferably not more than 12 carbon atoms. Among such groups, the soluble group is preferably an alkyl group, an alkoxy group or an aralkyl group, for example, an n-propyl group, a 2-propyl group, an n-butyl group, or an isobutyl group. The soluble group is more preferably an n-hexyl group or an n-octyl group. The soluble group optionally has a substituent. (Number of Soluble Groups) From the standpoint of the ease of obtaining a polymer solution that can be used in a wet film-forming method, the greater the number of soluble groups in the respective polymers of the present embodiments, the more preferred it is. On the other hand, from the standpoint of limiting a reduction in the film thickness, which is caused by dissolution of the resulting layer that occurs when another layer is formed thereon by a wet film-forming method, the smaller the number of soluble groups, the more preferred it is. The number of soluble groups in the respective polymers of the present embodiments can be expressed in terms of the number of moles per 1 g of each polymer. When the number of soluble groups in the respective polymers of the present embodiments is expressed in terms of the number of moles per 1 g of each polymer, the value thereof is usually 4.0 mmol or less, preferably 3.0 mmol or less, more preferably 2.0 mmol or less, but usually 0.1 mmol or more, preferably 0.5 mmol or more, per 1 g of each polymer. With the number of soluble groups being in this range, the polymer easily dissolves in a solvent, so that a composition containing the polymer that is suitable for a wet film-forming method is easily obtained. In addition, since the density of soluble groups is moderate, the polymer is sufficiently insoluble in organic solvents after being heated and dried, so that a multilayer laminate structure can be formed by a wet film-forming method. The number of soluble groups per 1 g of each polymer can be calculated from the molar ratio and the structural formulae of the monomers used for the synthesis of the polymer, excluding the terminal groups of the polymer. For example, in the case of the polymer 1 synthesized in the below-described Example 1-1, the average molecular weight of the repeating units in the polymer 1 excluding the terminal groups is 650, and the average number of soluble groups per repeating unit is 1. Based on a simple proportional calculation, the number of soluble groups per molecular weight of 1 g is calculated to be 1.54 mmol. [Crosslinkable Group] The polymers according to the first and the second embodiments of the present invention may have a crosslinkable group. In the polymers of these embodiments, the crosslinkable group may exist in the repeating unit represented by Formula (1), or in a repeating unit other than the repeating unit represented by Formula (1). Particularly, the polymers preferably have the crosslinkable group in Ar1, which is a side chain, since this facilitates the progress of a crosslinking reaction. By allowing the polymers to have a crosslinkable group, the solubility in organic solvents can be made largely different before and after a reaction caused by irradiation with heat and/or an active energy ray (insolubilization reaction). The term “crosslinkable group” used herein refers to a group which, upon being irradiated with heat and/or an active energy ray, reacts with a group constituting other molecule located near the crosslinkable group to generate a new chemical bond. In this case, the group with which the crosslinkable group reacts may be the same as or different from the crosslinkable group. The crosslinkable group is preferably a group that contains a cyclobutene ring condensed with an aromatic ring and an alkenyl group bound to the aromatic ring, more preferably a group selected from the following crosslinkable groups T. The crosslinkable group preferably further substitutes a substituent of any of the above-described structures. (Crosslinkable Groups T) The crosslinkable groups T are the following structures. In the crosslinkable groups T, R21to R23each independently represent a hydrogen atom or an alkyl group; R24to R26each independently represent a hydrogen atom, an alkyl group, or an alkoxy group; x represents an integer of 1 to 4; y represents an integer of 1 to 5; and z represents an integer of 1 to 7. When x is 2 or larger, plural R24s may be the same or different, and adjacent R24s may be bound with each other to form a ring. When y is 2 or larger, plural R25s may be the same or different, and adjacent R25s may be bound with each other to form a ring. When z is 2 or larger, plural R26s may be the same or different. Ar21and Ar22each represent an aromatic hydrocarbon group or an aromatic heterocyclic group, which optionally has a substituent. The alkyl group represented by R21to R26is, for example, a linear or branched chain alkyl group having not more than 8 carbon atoms, preferably not more than 6 carbon atoms. Examples of the alkyl group include a methyl group, an ethyl group, an n-propyl group, a 2-propyl group, an n-butyl group, and an isobutyl group. The alkyl group is more preferably a methyl group or an ethyl group. When R21to R26each have 8 or less, preferably 6 or less carbon atoms, the crosslinking reaction is not sterically hindered, and the resulting film tends to be easily insolubilized. The alkoxy group represented by R24to R26is, for example, a linear or branched chain alkoxy group having not more than 8 carbon atoms, preferably not more than 6 carbon atoms. Examples of the alkoxy group include a methoxy group, an ethoxy group, an n-propoxy group, a 2-propoxy group, and an n-butoxy group. The alkoxy group is more preferably a methoxy group or an ethoxy group. When R24to R26each have 8 or less, preferably 6 or less carbon atoms, the crosslinking reaction is not sterically hindered, and the resulting film tends to be easily insolubilized. Examples of the aromatic hydrocarbon group represented by Ar21and Ar22which optionally has a substituent include 6-membered monocyclic or 2- to 5-fused-ring groups having one free valence, such as a benzene ring and a naphthalene ring. The aromatic hydrocarbon group is particularly preferably a benzene ring having one free valence. Ar22may be a group formed by two or more aromatic hydrocarbon groups optionally having a substituent that are bound together. Examples of such a group include a biphenylene group and a terphenylene group, and a 4,4′-biphenylene group is preferred. Substituents that may be taken by Ar21and Ar22are the same as the above-described substituents Z. As the crosslinkable group, from the standpoint of further improving the electrochemical stability of an element, a group that undergoes a cycloaddition reaction, such as a cinnamoyl group (e.g., an arylvinyl carbonyl group), a benzocyclobutene ring having one free valence or a 1,2-dihydrocyclobuta[a]naphthalene ring having one free valence, is preferred. Among the above-described crosslinkable group, from the standpoint of attaining a particularly stable crosslinked structure, groups that contain a cyclobutene ring condensed with an aromatic ring having one free valence or a 1,2-dihydrocyclobuta[a]naphthalene ring having one free valence are preferred and, thereamong, a benzocyclobutene ring and a 1,2-dihydrocyclobuta[a]naphthalene ring having one free valence are more preferred, and a 1,2-dihydrocyclobuta[a]naphthalene ring having one free valence is particularly preferred because of its low crosslinking temperature. (Number of Crosslinkable Groups) From the standpoint of sufficiently insolubilizing the polymer by crosslinking and thereby making it easier to form another layer thereon by a wet film-forming method, the greater the number of crosslinkable group(s) in the respective polymers of the present embodiments, the more preferred it is. On the other hand, the number of crosslinkable group(s) is preferably small from the standpoints of making cracking of the resulting film less likely to occur, reducing the amount of residual unreacted crosslinkable group(s), and extending the life of an organic electroluminescent element. In the respective polymers of the present embodiments, the number of crosslinkable group(s) in a single polymer chain is preferably 1 or larger, more preferably 2 or larger, but preferably 200 or less, more preferably 100 or less. The number of crosslinkable group(s) in the respective polymers of the present embodiments can be expressed in terms of the number per polymer molecular weight of 1,000. When the number of crosslinkable group(s) in the respective polymers of the present embodiments is expressed in terms of the number per polymer molecular weight of 1,000, the number of crosslinkable group(s) is usually 3.0 or less, preferably 2.0 or less, more preferably 1.0 or less, but usually 0.01 or more, preferably 0.05 or more, per molecular weight of 1,000. With the number of crosslinkable group(s) being in this range, cracking and the like of the polymer hardly occurs, so that a flat film is likely to be formed. In addition, since the crosslinking density is moderate, the amount of unreacted crosslinkable group(s) remaining in the resulting layer after a crosslinking reaction is small, and has little effect on the life of an element to be obtained. Moreover, since it makes the polymer sufficiently insoluble in organic solvents after the crosslinking reaction, a multilayer laminate structure can be easily formed by a wet film-forming method. The number of crosslinkable group(s) per molecular weight of 1,000 can be calculated from the molar ratio and the structural formulae of the monomers used for the synthesis of the polymer, excluding the terminal groups of the polymer. For example, in the case of the polymer 3 synthesized in the below-described Example, the average molecular weight of the repeating units in the polymer 3 excluding the terminal groups is 868, and the number of crosslinkable group per repeating unit is 0.114. Based on a simple proportional calculation, the number of crosslinkable group per molecular weight of 1,000 is calculated to be 0.132. Further, for example, in the case of the polymer 13 synthesized in the below-described Example, the average molecular weight of the repeating units in the polymer 13 excluding the terminal groups is 966.45, and the number of crosslinkable group(s) per repeating unit is 0.145. Based on a simple proportional calculation, the number of crosslinkable group(s) per molecular weight of 1,000 is calculated to be 0.15. It is also preferred that the polymers according to the first and the second embodiments of the present invention have no crosslinkable group. Organic electroluminescent elements produced using the respective polymers of these embodiments that have no crosslinkable group tend to have an extended life. The polymers of the present embodiments are insolubilized when made into a film by a wet film-forming method. In other words, the polymer of the present invention is insolubilized by dissolving it in a solvent to prepare a solution, applying this solution onto a substrate, removing the solvent, and then drying and baking the resultant by heating. Accordingly, when a hole transport layer is formed by a wet film-forming method using the polymer of the present invention, it is possible to continuously coat and form a light-emitting layer in contact with the hole transport layer in a laminated manner by a wet process. In this case, when the hole transport layer that is in contact with the light-emitting layer is composed of the polymer of the present invention that has no crosslinkable group, because of the absence of unreacted crosslinkable group, an intended reaction caused by an unreacted crosslinkable group does not take place during electrification and operation of the element to deteriorate a material. Therefore, the working life of the element is believed to be extended. In addition, when each polymer of the present embodiments that has no crosslinkable group is used in combination with other polymer having no crosslinkable group, a thin film that is insoluble in solvents can be obtained. Therefore, the design range of a hole transport layer is expanded, making it easier to obtain a desired hole transport layer. When each polymer of the present embodiments that has no crosslinkable group is used in combination with other polymer having no crosslinkable group, both of these polymers are dissolved in a solvent to prepare a solution, and this solution is applied onto a substrate, after which the solvent is removed and the resultant is dried and then baked by heating, whereby a thin film is formed. In such a film formed from each polymer of the present embodiments that has no crosslinkable group and other polymer having no crosslinkable group, the content of the polymer of the present invention that has no crosslinkable group is not less than 10% by weight, preferably not less than 20% by weight, more preferably not less than 25% by weight, particularly preferably not less than 50% by weight, most preferably not less than 70% by weight. In order to obtain an effect of mixing the other polymer having no crosslinkable group, the content of the polymer of the present invention that has no crosslinkable group is 95% by weight or less, preferably 90% by weight or less, more preferably 85% by weight or less, particularly preferably 80% by weight or less. By controlling the content in this range, the resulting film is easily insolubilized, and the properties of the resulting element tend to be improved. [Molecular Weight of Polymer] The polymer of the present invention that contains the repeating unit represented by Formula (1) has a weight-average molecular weight of usually 3,000,000 or less, preferably 1,000,000 or less, more preferably 500,000 or less, still more preferably 200,000 or less, particularly preferably 100,000 or less, but usually 2,500 or higher, preferably 5,000 or higher, more preferably 10,000 or higher, still more preferably 20,000 or higher, particularly preferably 30,000 or higher. When the weight-average molecular weight of the polymer is not higher than the above-described upper limit value, the polymer is soluble in solvents and tends to have excellent film-forming properties. Meanwhile, when the weight-average molecular weight of the polymer is not less than the above-described lower limit value, a reduction in the glass transition temperature, melting point and vaporization temperature of the polymer is inhibited, so that the heat resistance may be improved. In addition, after a crosslinking reaction, the resulting coating film may be sufficiently insoluble in organic solvents. Further, the polymer of the present invention that contains the repeating unit represented by Formula (1) has a number-average molecular weight (Mn) of usually 2,500,000 or less, preferably 750,000 or less, more preferably 400,000 or less, particularly preferably 100,000 or less, but usually 2,000 or higher, preferably 4,000 or higher, more preferably 8,000 or higher, still more preferably 20,000 or higher. Moreover, the polymer of the present invention that contains the repeating unit represented by Formula (1) has a degree of dispersion (Mw/Mn) of preferably 3.5 or lower, more preferably 2.5 or lower, particularly preferably 2.0 or lower. The lower the degree of dispersion, the more preferred it is, and the lower limit value is thus ideally 1. When the degree of dispersion of the polymer is not higher than the above-described upper limit value, the polymer is easy to purify and has good solubility in solvents as well as good charge transportability. The polymer of the present invention that contains the repeating unit represented by Formula (2) has a weight-average molecular weight (Mw) of preferably 10,000 or higher, more preferably 20,000 or higher, still more preferably 40,000 or higher, but preferably 2,000,000 or less, more preferably 1,000,000 or less. When this weight-average molecular weight is not higher than the above-described upper limit value, an increase in the molecular weight of impurities is inhibited, so that the polymer tends to be easily purified. Meanwhile, when the weight-average molecular weight is not less than the above-described lower limit value, a reduction in the glass transition temperature, melting point, vaporization temperature and the like is inhibited, so that the heat resistance tends to be improved. Further, the polymer of the present invention that contains the repeating unit represented by Formula (2) has a number-average molecular weight (Mn) of preferably 1,000,000 or less, more preferably 800,000 or less, still more preferably 500,000 or less, but preferably 5,000 or higher, more preferably 10,000 or higher, still more preferably 20,000 or higher. Moreover, the polymer of the present invention that contains the repeating unit represented by Formula (2) has a degree of dispersion (Mw/Mn) of preferably 3.5 or lower, more preferably 3 or lower, still more preferably 2.4 or lower, yet still more preferably 2.1 or lower, yet still more preferably 2 or lower, but preferably 1 or higher, more preferably 1.1 or higher, still more preferably 1.2 or higher. When the degree of dispersion is not higher than the above-described upper limit value, the polymer is easy to purify, and a reduction in the solubility in solvents and a reduction in the charge transportability tend to be inhibited. The weight-average molecular weight and the number-average molecular weight of the polymer are usually determined by an SEC (size exclusion chromatography) analysis. In the SEC analysis, a component of a higher molecular weight has a shorter elution time, while a component of a lower molecular weight requires a longer elution time. Using a calibration curve determined from the elution time of a polystyrene (standard sample) having a known molecular weight, the elution time of a sample is converted into the molecular weight to calculate the weight-average molecular weight and the number-average molecular weight. Specific Examples Specific examples of the polymer of the present invention that contains the repeating unit represented by Formula (1) are shown below; however, the polymer of the present invention is not restricted thereto. In the following chemical formulae, each numerical value indicates the molar ratio of the corresponding repeating unit. The following polymers may each be, for example, a random copolymer, an alternate copolymer, a block copolymer, or a graft copolymer, and are not restricted in terms of the sequence order of the monomers. Specific examples of the polymer of the present invention that contains the repeating unit represented by Formula (2) and specific examples of the polymer of the present invention wherein Ar2of the repeating unit represented by Formula (2) has a structure represented by Formula (10) are shown below; however, the polymer of the present invention is not restricted thereto. In the following polymers, n and n′ each represent the number of corresponding repeating units. Further, each numerical value in the following chemical formulae indicates the molar ratio of the corresponding repeating unit. The following polymers may each be, for example, a random copolymer, an alternate copolymer, a block copolymer, or a graft copolymer, and are not restricted in terms of the sequence order of the monomers. [Polymer Production Method] A method of producing the polymer of the present embodiment is not particularly restricted, and any method may be employed as long as it yields the polymer of the present invention. The polymer of the present invention can be produced by, for example, a polymerization method based on the Suzuki reaction, a polymerization method based on the Grignard reaction, a polymerization method based on the Yamamoto reaction, a polymerization method based on the Ullmann reaction, or a polymerization method based on the Buchwald-Hartwig reaction. In the cases of a polymerization method based on the Ullmann reaction and a polymerization method based on the Buchwald-Hartwig reaction, for example, the polymer of the present invention that contains the repeating unit represented by Formula (1) is synthesized by allowing a dihalogenated aryl represented by Formula (1a) (wherein, X represents a halogen atom such as I, Br, Cl, or F) and a primary aminoaryl represented by Formula (2b) to react with each other In the above formulae, Y represents a halogen atom, and Ar1, R1, R2and X are defined the same as in the above-described Formula (1). Further, in the cases of a polymerization method based on the Ullmann reaction and a polymerization method based on the Buchwald-Hartwig reaction, for example, the polymer of the present embodiment that contains the repeating unit represented by Formula (2) is synthesized by allowing a dihalogenated aryl represented by Formula (2a) (wherein, X represents a halogen atom such as I, Br, Cl, or F) and a primary aminoaryl represented by Formula (2b) to react with each other. In the above formulae, R3, R4, R5, R6, and Ar2have the same meanings as in the above-described Formula (2). In the above-described polymerization methods, the reaction that yields an N-aryl bond is usually performed in the presence of a base, such as potassium carbonate, tert-butoxy sodium, or triethylamine. This reaction can also be performed in the presence of a transition metal catalyst, such as copper or a palladium complex. <Organic Electroluminescent Element Material> The polymer according to one embodiment of the present invention can be particularly suitably used as an organic electroluminescent element material. In other words, the polymer is preferably used as an organic electroluminescent element material. The polymer according to one embodiment of the present invention is usually incorporated between an anode and a light-emitting layer in an organic electroluminescent element. In other words, the polymer is preferably used as a material that constitutes at least either one of a hole injection layer and a hole transport layer, namely a charge transporting material. When the polymer is used as a charge transporting material, the charge transporting material may contain a single kind of the polymer, or two or more kinds of the polymer in any combination at any ratio. When the polymer is used to form at least either one of a hole injection layer and a hole transport layer of an organic electroluminescent element, the content of the polymer in the hole injection layer or the hole transport layer is usually not less than 1% by mass and 100% by mass or less, preferably not less than 5% by mass and 100% by mass or less, more preferably not less than 10% by mass and 100% by mass or less. When the content of the polymer is in this range, the charge transportability of the hole injection layer or the hole transport layer is enhanced, so that the driving voltage is reduced and the working stability is improved, which is preferred. When the content of the polymer in the hole injection layer or the hole transport layer is not 100% by mass, a component constituting the hole injection layer or the hole transport layer may be, for example, the below-described hole-transporting compound. Further, from the standpoint of simply producing an organic electroluminescent element, the polymer is preferably used in an organic layer formed by a wet film-forming method. <Composition for Organic Electroluminescent Element> The composition for an organic electroluminescent element according to one embodiment of the present invention contains the above-described polymer. In the composition for an organic electroluminescent element according to the present embodiment, the above-described polymer may be contained singly, or two or more kinds thereof may be contained in any combination at any ratio. [Content of Polymer] In the composition for an organic electroluminescent element according to the present embodiment, the content of the above-described polymer is usually not less than 0.01% by mass and 70% by mass or less, preferably not less than 0.1% by mass and 60% by mass or less, more preferably not less than 0.5% by mass and 50% by mass or less. When the content of the above-described polymer is in this range, a defect and a thickness variation hardly occur in the resulting organic layer, which is preferred. The composition for an organic electroluminescent element according to the present embodiment may contain a solvent and the like in addition to the above-described polymer. [Solvent] The composition for an organic electroluminescent element according to the present embodiment usually contains a solvent. This solvent is preferably one which dissolves the polymer of the present invention. Specifically, the solvent is preferably one which dissolves the polymer in an amount of usually not less than 0.05% by mass, preferably not less than 0.5% by mass, more preferably not less than 1% by mass, at room temperature. Specific examples of the solvent include organic solvents, for example, aromatic solvents, such as toluene, xylene, mesitylene, and cyclohexylbenzene; halogen-containing solvents, such as 1,2-dichloroethane, chlorobenzene, and o-dichlorobenzene; ether-based solvents, such as aliphatic ethers (e.g., ethylene glycol dimethyl ether, ethylene glycol diethyl ether, and propylene glycol-1-monomethyl ether acetate (PGMEA)) and aromatic ethers (e.g., 1,2-dimethoxybenzene, 1,3-dimethoxybenzene, anisole, phenetole, 2-methoxytoluene, 3-methoxytoluene, 4-methoxytoluene, 2,3-dimethylanisole, and 2,4-dimethylanisole); and ester-based solvents, such as aliphatic ester-based solvents (e.g., ethyl acetate, n-butyl acetate, ethyl lactate, and n-butyl lactate) and aromatic esters (e.g., phenyl acetate, phenyl propionate, methyl benzoate, ethyl benzoate, isopropyl benzoate, propyl benzoate, and n-butyl benzoate), as well as those organic solvents that are used in the below-described composition for the formation of hole injection layer and the below-described composition for the formation of hole transport layer. These solvents may be used singly, or two or more thereof may be used in any combination at any ratio. Thereamong, the solvent contained in the composition for an organic electroluminescent element according to the present embodiment is preferably one having a surface tension at 20° C. of usually less than 40 dyn/cm, preferably 36 dyn/cm or less, more preferably 33 dyn/cm or less. When the composition for an organic electroluminescent element according to the present embodiment is used to form a coating film by a wet film-forming method and the above-described polymer is crosslinked to form an organic layer, the solvent preferably has a high affinity with an underlayer. This is because the uniformity of the resulting film greatly affects the uniformity and the stability of emission by an organic electroluminescent element. Accordingly, the composition for an organic electroluminescent element that is to be used in a wet film-forming method is required to have a low surface tension so that it can yield a uniform coating film with a high leveling property. The use of a solvent having such a low surface tension is thus preferred since it enables to form a uniform layer containing the above-described polymer, namely a uniform crosslinked layer. Specific examples of the low-surface-tension solvent include: the above-mentioned aromatic solvents, such as toluene, xylene, mesitylene, and cyclohexylbenzene; ester-based solvents, such as ethyl benzoate; ether-based solvents, such as anisole; trifluoromethoxyanisole; pentafluoromethoxybenzene; 3-(trifluoromethyl)anisole; and ethyl(pentafluorobenzoate). Further, the solvent contained in the composition for an organic electroluminescent element according to the present embodiment is preferably one having a vapor pressure at 25° C. of usually 10 mmHg or lower, preferably 5 mmHg or lower, but usually 0.1 mmHg or higher. The use of such a solvent makes it possible to prepare a composition for an organic electroluminescent element that is not only preferred for a process of producing an organic electroluminescent element by a wet film-forming method but also suited for the properties of the above-described polymer. Specific examples of such a solvent include: the above-mentioned aromatic solvents, such as toluene, xylene, and metysilene; ether-based solvents; and ester-based solvents. Incidentally, moisture can deteriorate the performance of an organic electroluminescent element and, particularly, may accelerate a reduction in the brightness during continuous operation. Therefore, in order to minimize the moisture remaining in the resulting wet-formed film, it is more preferred to use, among the above-described solvents, a solvent having a water solubility at 25° C. of preferably 1% by mass or less, more preferably 0.1% by mass or less. In the composition for an organic electroluminescent element according to the present embodiment, the content of the solvent is usually not less than 10% by mass, preferably not less than 30% by mass, more preferably not less than 50% by mass, particularly preferably not less than 80% by mass. When the content of the solvent is not less than the above-described lower limit, the resulting layer can be provided with good flatness and good uniformity. [Electron-Accepting Compound] From the standpoint of reducing the resistance, the composition for an organic electroluminescent element according to the present embodiment preferably further contains an electron-accepting compound. Particularly, when the composition for an organic electroluminescent element according to the present embodiment is used for forming a hole injection layer, the composition preferably contains an electron-accepting compound. As the electron-accepting compound, an oxidative compound capable of accepting an electron from the polymer of the present invention is preferred. Specifically, the electron-accepting compound is preferably a compound having an electron affinity of 4 eV or higher, more preferably a compound having an electron affinity of 5 eV or higher. The electron-accepting compound is, for example, one or more compounds selected from the group consisting of triaryl boron compounds, halogenated metals, Lewis acids, organic acids, onium salts, salts of an arylamine and a halogenated metal, and salts of an arylamine and a Lewis acid. Specific examples of the electron-accepting compound include onium salts substituted with an organic group, such as 4-isopropyl-4′-methyldiphenyliodonium tetrakis(pentafluorophenyl)borate and triphenylsulfonium tetrafluoroborate (WO 2005/089024 and WO 2017/164268); high-valence inorganic compounds, such as iron (III) chloride (Japanese Unexamined Patent Application Publication No. H11-251067) and ammonium peroxodisulfate; cyano compounds, such as tetracyanoethylene; aromatic boron compounds, such as tris(pentafluorophenyl)borane (Japanese Unexamined Patent Application Publication No. 2003-31365); fullerene derivatives; and iodine. The composition for an organic electroluminescent element according to the present embodiment may contain any one of the above-described electron-accepting compounds singly, or two or more of the above-described electron-accepting compounds in any combination at any ratio. When the composition for an organic electroluminescent element according to the present embodiment contains an electron-accepting compound, the content of the electron-accepting compound in the composition for an organic electroluminescent element according to the present invention is usually not less than 0.0005% by mass, preferably not less than 0.001% by mass, but usually 20% by mass or less, preferably 10% by mass or less. Further, the ratio of the electron-accepting compound with respect to the polymer of the present invention in the composition for an organic electroluminescent element is usually 0.5% by mass or higher, preferably 1% by mass or higher, more preferably 3% by mass or higher, but usually 80% by mass or lower, preferably 60% by mass or lower, still more preferably 40% by mass or lower. The content of the electron-accepting compound in the composition for an organic electroluminescent element is preferably not less than the above-described lower limit since this allows an electron-accepting compound to accept an electron from the polymer and the resistance of the resulting organic layer is reduced, while the content of the electron-accepting compound is preferably not higher than the above-described upper limit since this makes a defect and a thickness variation unlikely to occur in the resulting organic layer. [Cation Radical Compound] The composition for an organic electroluminescent element according to the present embodiment may further contain a cation radical compound. The cation radical compound is preferably an ionic compound composed of a cation radical, which is a chemical species formed by removing an electron from a hole-transporting compound, and a counter anion. It is noted here that, when the cation radical is derived from a hole-transporting polymer compound, the cation radical has a structure formed by removing an electron from a repeating unit of the polymer compound. The cation radical is preferably a chemical species formed by removing a single electron from the below-described hole-transporting compound. From the standpoints of amorphousness, visible light transmittance, heat resistance, solubility and the like, the cation radical is suitably a chemical species formed by removing a single electron from a compound preferred as a hole-transporting compound. The cation radical compound can be produced by mixing the below-described hole-transporting compound and the above-described electron-accepting compound. That is, mixing of the hole-transporting compound and the electron-accepting compound induces electron transfer from the hole-transporting compound to the electron-accepting compound, as a result of which a cationic compound composed of a cation radical of the hole-transporting compound and a counter anion is generated. When the composition for an organic electroluminescent element according to the present embodiment contains a cation radical compound, the content of the cation radical compound in the composition for an organic electroluminescent element is usually 0.0005% by mass or higher, preferably 0.001% by mass or higher, but usually 40% by mass or less, preferably 20% by mass or less. The content of the cation radical compound is preferably not less than the above-described lower limit since the resistance of the resulting organic layer is thereby reduced, while the content of the cation radical compound is preferably not higher than the above-described upper limit since this makes a defect and a thickness variation unlikely to occur in the resulting organic layer. In addition to the above-described components, the composition for an organic electroluminescent element according to the present embodiment may also contain components that are contained in the below-described composition for the formation of hole injection layer and the composition for the formation of hole transport layer in the below-described respective amounts. <Materials of Light-Emitting Layer> In an organic electroluminescent element in which the polymer according to one embodiment of the present invention is used as a charge transporting material constituting at least either one of a hole injection layer and a hole transport layer, a light-emitting layer contains a light-emitting material and a host material. As the light-emitting material, a phosphorescent material or a fluorescent material can be used. <Phosphorescent Layer> In an organic electroluminescent element in which the polymer according to one embodiment of the present invention is used as a charge transporting material constituting at least either one of a hole injection layer and a hole transport layer, when a light-emitting layer is a phosphorescent layer, the following materials are preferred as a phosphorescent material. <Phosphorescent Material> The term “phosphorescent material” used herein refers to a material that emits light from an excited triplet state. Typical examples thereof include metal complex compounds containing Ir, Pt, Eu or the like, and the structure of the material preferably contains a metal complex. Among metal complexes, examples of a phosphorescent organic metal complex that emits light through a triplet state include Werner-type complexes and organic metal complex compounds that contain, as a central metal, a metal selected from Groups 7 to 11 of the long-form Periodic Table (hereinafter, unless otherwise specified, “Periodic Table” refers to the long-form Periodic Table). As such a phosphorescent material, a compound represented by Formula (201) or a compound represented by Formula (205) is preferred, and a compound represented by Formula (201) is more preferred. A ring A1 represents an aromatic hydrocarbon structure optionally having a substituent, or an aromatic heterocyclic structure optionally having a substituent. A ring A2 represents an aromatic heterocyclic structure optionally having a substituent. R201and R202each independently represent a structure represented by Formula (202), and * represents a bond formed with the ring A1 and/or the ring A2. R201and R202are optionally the same or different and, when there are plural R201s and plural R202s, the R201s and the R202s are each optionally the same or different. Ar201and Ar203each independently represent an aromatic hydrocarbon structure optionally having a substituent, or an aromatic heterocyclic structure optionally having a substituent. Ar202represents an aromatic hydrocarbon structure optionally having a substituent, an aromatic heterocyclic structure optionally having a substituent, or an aliphatic hydrocarbon structure optionally having a substituent. Substituents bound to the ring A1, substituents bound to the ring A2, or a substituent bound to the ring A1 and a substituent bound to the ring A2, are optionally bound with each other to form a ring. B201-L200-B202represents an anionic bidentate ligand. B201and B202each independently represent a carbon atom, an oxygen atom or a nitrogen atom, which optionally constitutes a ring. L200represents a single bond, or an atomic group constituting a bidentate ligand together with B201and B202. When there are plural B201-L200-B202moieties, these moieties may be the same or different. Further, i1 and i2 each independently represent an integer of 0 to 12;i3 represents an integer of 0 or larger, with an upper limit thereof being the number of substituents that can be taken by Ar202;j represents an integer of 0 or larger, with an upper limit thereof being the number of substituents that can be taken by Ar201;k1 and k2 each independently represent an integer of 0 or larger, with an upper limit thereof being the number of substituents that can be taken by the ring A1 and the ring A2, respectively; andm represents an integer of 1 to 3. Unless otherwise specified, the substituents are preferably selected from the following substituents Z′. <Substituents Z′> alkyl groups, preferably alkyl groups having 1 to 20 carbon atoms, more preferably alkyl groups having 1 to 12 carbon atoms, still more preferably alkyl groups having 1 to 8 carbon atoms, particularly preferably alkyl groups having 1 to 6 carbon atomsalkoxy groups, preferably alkoxy groups having 1 to 20 carbon atoms, more preferably alkoxy groups having 1 to 12 carbon atoms, still more preferably alkoxy groups having 1 to 6 carbon atomsaryloxy groups, preferably aryloxy groups having 6 to 20 carbon atoms, more preferably aryloxy groups having 6 to 14 carbon atoms, still more preferably aryloxy groups having 6 to 12 carbon atoms, particularly preferably aryloxy groups having 6 carbon atomsheteroaryloxy groups, preferably heteroaryloxy groups having 3 to 20 carbon atoms, more preferably heteroaryloxy groups having 3 to 12 carbon atomsalkylamino groups, preferably alkylamino groups having 1 to 20 carbon atoms, more preferably alkylamino groups having 1 to 12 carbon atomsarylamino groups, preferably arylamino groups having 6 to 36 carbon atoms, more preferably arylamino groups having 6 to 24 carbon atomsaralkyl groups, preferably aralkyl groups having 7 to 40 carbon atoms, more preferably aralkyl groups having 7 to 18 carbon atoms, still more preferably aralkyl groups having 7 to 12 carbon atomsheteroaralkyl groups, preferably heteroaralkyl groups having 7 to 40 carbon atoms, more preferably heteroaralkyl groups having 7 to 18 carbon atomsalkenyl groups, preferably alkenyl groups having 2 to 20 carbon atoms, more preferably alkenyl groups having 2 to 12 carbon atoms, still more preferably alkenyl groups having 2 to 8 carbon atoms, particularly preferably alkenyl groups having 2 to 6 carbon atomsalkynyl groups, preferably alkynyl groups having 2 to 20 carbon atoms, more preferably alkynyl groups having 2 to 12 carbon atomsaryl groups, preferably aryl groups having 6 to 30 carbon atoms, more preferably aryl groups having 6 to 24 carbon atoms, still more preferably aryl groups having 6 to 18 carbon atoms, particularly preferably aryl groups having 6 to 14 carbon atomsheteroaryl groups, preferably heteroaryl groups having 3 to 30 carbon atoms, more preferably heteroaryl groups having 3 to 24 carbon atoms, still more preferably heteroaryl groups having 3 to 18 carbon atoms, particularly preferably heteroaryl groups having 3 to 14 carbon atomsalkylsilyl groups, preferably alkylsilyl groups whose alkyl groups have 1 to 20 carbon atoms, more preferably alkylsilyl groups whose alkyl groups have 1 to 12 carbon atomsarylsilyl groups, preferably arylsilyl groups whose aryl groups have 6 to 20 carbon atoms, more preferably arylsilyl groups whose alkyl groups have 6 to 14 carbon atomsalkylcarbonyl groups, preferably alkylcarbonyl groups having 2 to 20 carbon atomsarycarbonyl groups, preferably arylcarbonyl groups having 7 to 20 carbon atoms In the above-described groups, one or more hydrogen atoms are optionally substituted with fluorine atoms or deuterium atoms. Unless otherwise specified, “aryl” is an aromatic hydrocarbon, and “heteroaryl” is an aromatic heterocycle.a hydrogen atom, a deuterium atom, a fluorine atom, a cyano group, and —SF5. (Preferred Groups in Substituents Z′) Among these substituents Z′,alkyl groups, alkoxy group, an aryloxy group, an arylamino group, an aralkyl group, an alkenyl group, an aryl group, a heteroaryl group, an alkylsilyl group, an arylsilyl group, an and these groups in which one or more hydrogen atoms are substituted with fluorine atom(s), as well as a fluorine atom, a cyano group, and —SF5are preferred;an alkyl group, an arylamino group, an aralkyl group, an alkenyl group, an aryl group, a heteroaryl group, an and these groups in which one or more hydrogen atoms are substituted with fluorine atom(s), as well as a fluorine atom, a cyano group, and —SF5are more preferred;an alkyl group, an alkoxy group, an aryloxy group, an arylamino group, an aralkyl group, an alkenyl group, an aryl group, a heteroaryl group, an alkylsilyl group, an and arylsilyl groups are still more preferred;an alkyl group, an arylamino group, an aralkyl group, an alkenyl group, an aryl group, and a heteroaryl group are particularly preferred; andan alkyl group, an arylamino group, an aralkyl group, an aryl group, an and a heteroaryl group are most preferred. (Substituents Substituting Z′) These substituents Z′ optionally further have a substituent selected from the substituents Z′. Preferred groups, more preferred groups, still more preferred groups, particularly preferred groups, and most preferred groups of the optional substituent are the same as those of the substituents Z′. <Ring A1> The ring A1 represents an aromatic hydrocarbon structure optionally having a substituent, or an aromatic heterocyclic structure optionally having a substituent. (Aromatic Hydrocarbon) The aromatic hydrocarbon of the ring A1 is preferably an aromatic hydrocarbon having 6 to 30 carbon atoms, specifically a benzene ring, a naphthalene ring, an anthracene ring, a triphenylenyl ring, an acenaphthene ring, a fluoranthene ring, or a fluorene ring. (Aromatic Heterocycle) The aromatic heterocycle of the ring A1 is preferably an aromatic heterocycle having 3 to 30 carbon atoms which contains any one of a nitrogen atom, an oxygen atom, and a sulfur atom as a hetero atom, more preferably a furan ring, a benzofuran ring, a thiophene ring, or a benzothiophene ring. The ring A1 is still more preferably a benzene ring, a naphthalene ring, or a fluorene ring, particularly preferably a benzene ring or a fluorene ring, most preferably a benzene ring. <Ring A2> The ring A2 represents an aromatic heterocyclic structure optionally having a substituent. (Aromatic Heterocycle) The aromatic heterocycle of the ring A2 is preferably an aromatic heterocycle having 3 to 30 carbon atoms which contains any one of a nitrogen atom, an oxygen atom, and a sulfur atom as a hetero atom. Specific examples of the aromatic heterocycle include a pyridine ring, a pyrimidine ring, a pyrazine ring, a triazine ring, an imidazole ring, an oxazole ring, a thiazole ring, a benzothiazole ring, a benzoxazole ring, a benzimidazole ring, a quinoline ring, an isoquinoline ring, a quinoxaline ring, a quinazoline ring, a naphthyridine ring, and a phenanthridine ring, andthe aromatic heterocycle is more preferably a pyridine ring, a pyrazine ring, a pyrimidine ring, an imidazole ring, a benzothiazole ring, a benzoxazole ring, a quinoline ring, an isoquinoline ring, a quinoxaline ring, or a quinazoline ring,still more preferably a pyridine ring, an imidazole ring, a benzothiazole ring, a quinoline ring, an isoquinoline ring, a quinoxaline ring, or a quinazoline ring,most preferably a pyridine ring, an imidazole ring, a benzothiazole ring, a quinoline ring, a quinoxaline ring, or a quinazoline ring. A preferred combination of the ring A1 and the ring A2, which is expressed as “(ring A1-ring A2)”, is (benzene ring-pyridine ring), (benzene ring-quinoline ring), (benzene ring-quinoxaline ring), (benzene ring-quinazoline ring), (benzene ring-imidazole ring), or (benzene ring-benzothiazole ring). (Substituents of Ring A1 and Ring A2) The optional substituent of the ring A1 and that of the ring A2 can be selected arbitrarily; however, one or more selected from the above-described substituents Z′ are preferred. (Ar201to Ar203) Ar201and Ar203each independently represent an aromatic hydrocarbon structure optionally having a substituent, or an aromatic heterocyclic structure optionally having a substituent. Ar202represents an aromatic hydrocarbon structure optionally having a substituent, an aromatic heterocyclic structure optionally having a substituent, or an aliphatic hydrocarbon structure optionally having a substituent. (Aromatic Hydrocarbon Rings of Ar201, Ar202and Ar203) When any one of Ar201, Ar202and Ar203is an aromatic hydrocarbon structure optionally having a substituent,the aromatic hydrocarbon structure is preferably an aromatic hydrocarbon ring having 6 to 30 carbon atoms, specifically a benzene ring, a naphthalene ring, an anthracene ring, a triphenylenyl ring, an acenaphthene ring, a fluoranthene ring, or a fluorene ring,more preferably a benzene ring, a naphthalene ring, or a fluorene ring,most preferably a benzene ring. (9- and 9′-Positions of Fluorene) When any one of Ar201, Ar202and Ar203is a fluorene ring optionally having a substituent, it is preferred that the 9-position and the 9′-position of the fluorene ring each have a substituent or be bound with an adjacent structure. (o- or m-phenylene) When either of Ar201and Ar202is a benzene ring optionally having a substituent, it is preferred that at least one benzene ring be bound with an adjacent structure at the ortho-position or the meta-position, and it is more preferred that at least one benzene ring be bound with an adjacent structure at the meta-position. (Aromatic Heterocycles of Ar201, Ar202and Ar203) When any one of Ar201, Ar202and Ar203is an aromatic heterocyclic structure optionally having a substituent, the aromatic heterocyclic structure is preferably an aromatic heterocycle having 3 to 30 carbon atoms which contains any one of a nitrogen atom, an oxygen atom, and a sulfur atom as a hetero atom. Specific examples of the aromatic heterocyclic structure include a pyridine ring, a pyrimidine ring, a pyrazine ring, a triazine ring, an imidazole ring, an oxazole ring, a thiazole ring, a benzothiazole ring, a benzoxazole ring, a benzimidazole ring, a quinoline ring, an isoquinoline ring, a quinoxaline ring, a quinazoline ring, a naphthyridine ring, a phenanthridine ring, a carbazole ring, a dibenzofuran ring, and a dibenzothiophene ring, and the aromatic heterocyclic structure is more preferably a pyridine ring, a pyrimidine ring, a triazine ring, a carbazole ring, a dibenzofuran ring, or a dibenzothiophene ring. (N-Position of Carbazole Ring) When any one of Ar201, Ar202and Ar203is a carbazole ring optionally having a substituent, it is preferred that the N-position of the carbazole ring have a substituent or be bound with an adjacent structure. (Aliphatic Hydrocarbon) When Ar202is an aliphatic hydrocarbon structure optionally having a substituent, the aliphatic hydrocarbon structure has a linear, branched or cyclic structure, and the number of carbon atoms thereof is:preferably 1 to 24,more preferably 1 to 12,still more preferably 1 to 8. (Preferred Ranges of i1 and i2 (Phenylene, Aralkyl, or Alkyl)) The i1 represents an integer of 0 to 12, preferably 1 to 12, more preferably 1 to 8, still more preferably 1 to 6. When the i1 is in this range, the solubility and the charge transportability are expected to be improved. The i2 represents an integer of 0 to 12, preferably 1 to 12, more preferably 1 to 8, still more preferably 1 to 6. When the i2 is in this range, the solubility and the charge transportability are expected to be improved. (Preferred Range of i3 (Terminal)) The i3 represents an integer of preferably 0 to 5, more preferably 0 to 2, still more preferably 0 or 1. (Preferred Range of j (Substituent on Phenylene End)) The j represents an integer of preferably 0 to 2, more preferably 0 or 1. (Preferred Ranges of k1 and k2 (Substituents of Rings A1 and A2)) The k1 and k2 each represent an integer of preferably 0 to 3, more preferably 1 to 3, still more preferably 1 or 2, particularly preferably 1. (Preferred Substituents of Ar201, Ar202and Ar203) The optional substituents of Ar201, Ar202and Ar203can be selected arbitrarily; however, one or more selected from the above-described substituents Z are preferred, and preferred groups thereof are the same as those of the substituents Z. The optional substituents are each more preferably a hydrogen atom, an alkyl group or an aryl group, particularly preferably a hydrogen atom or an alkyl group, and it is most preferred that Ar201, Ar202and Ar203be unsubstituted (the substituents are hydrogen atoms). (Preferred Structure of Formula (201)) Among those structures represented by Formula (202), a material having the following structure is preferred. (Phenylene Linked System) Structure Having a Group in which Benzene Rings are Linked That is, Ar201is a benzene ring structure; i1 is 1 to 6; and at least one of the benzene rings is bound with its adjacent structure at the ortho-position or the meta-position. By adopting this structure, the solubility and the charge transportability are expected to be improved. ((Phenylene)-Aralkyl(Alkyl)) Structure Having an Aromatic Hydrocarbon Group or an Aromatic Heterocyclic Group, to which an Alkyl Group or an Aralkyl Group is Bound, on the Ring A1 or the Ring A2 That is,Ar201is an aromatic hydrocarbon structure or an aromatic heterocyclic structure, and i1 is 1 to 6;Ar202is an aliphatic hydrocarbon structure, and i2 is 1 to 12, preferably 3 to 8; andAr203is a benzene ring structure, and i3 is 0 or 1. Ar201is preferably the above-described aromatic hydrocarbon structure, more preferably a structure in which one to five benzene rings are linked together, more preferably a single benzene ring. By adopting this structure, the solubility and the charge transportability are expected to be improved. (Dendron) Structure in which a Dendron is Bound to the Ring A1 or the Ring A2. For example, a structure in which Ar201and Ar202are each a benzene ring structure, Ar203is a biphenyl or terphenyl structure, i1 and i2 are 1 to 6, i3 is 2, and j is 2. By adopting this structure, the solubility and the charge transportability are expected to be improved. (B201-L200-B202) B201-L200-B202represents an anionic bidentate ligand. B201and B202each independently represent a carbon atom, an oxygen atom or a nitrogen atom, which optionally constitutes a ring. L200represents a single bond, or an atomic group constituting a bidentate ligand together with B201and B202. When there are plural B201-L200-B202moieties, these moieties may be the same or different. Among those structures represented by B201-L200-B202, structures represented by the following Formula (203) or (204) are preferred. In Formula (203), R211, R212and R213each represent a substituent. In Formula (204), a ring B3 represents a nitrogen atom-containing aromatic heterocyclic structure optionally having a substituent. The ring B3 is preferably a pyridine ring. The phosphorescent material represented by Formula (201) is not particularly restricted, and specific examples thereof include the following structures. (In Formula (205), M2represents a metal; T represents a carbon atom or a nitrogen atom; and R92to R95each independently represent a substituent, with a proviso that, when T is a nitrogen atom, R94and R95do not exist) In Formula (205), M2represents a metal. Specific examples thereof include those metals described above for the metal selected from Groups 7 to 11 of the Periodic Table. Thereamong, M2is, for example, preferably ruthenium, rhodium, palladium, silver, rhenium, osmium, iridium, platinum, or gold, particularly preferably a divalent metal, such as platinum or palladium. Further, in Formula (205), R92and R93each independently represent a hydrogen atom, a halogen atom, an alkyl group, an aralkyl group, an alkenyl group, a cyano group, an amino group, an acyl group, an alkoxycarbonyl group, a carboxyl group, an alkoxy group, an alkylamino group, an aralkylamino group, a haloalkyl group, a hydroxy group, an aryloxy group, an aromatic hydrocarbon group, or an aromatic heterocyclic group. When T is a carbon atom, R94and R95each independently represent any of the substituents exemplified above for R92and R93. Meanwhile, when T is a nitrogen atom, there is neither R94nor R95that are directly bound to T. R92to R95each optionally further have a substituent. The optional substituent may be any of the above-exemplified substituents. Further, any two or more of R92to R95are optionally bound with each other to form a ring. (Molecular Weight) The molecular weight of the phosphorescent material is preferably 5,000 or less, more preferably 4,000 or less, particularly preferably 3,000 or less. Meanwhile, the molecular weight of the phosphorescent material in the present invention is usually 800 or higher, preferably 1,000 or higher, more preferably 1,200 or higher. By controlling the molecular weight in this range, it is believed that the phosphorescent material is uniformly mixed with a charge transporting material without aggregation, so that a light-emitting layer having a high luminous efficiency can be obtained. The molecular weight of the phosphorescent material is preferably high not only because it provides a high Tg, a high melting point, a high decomposition temperature and the like and imparts excellent heat resistance to the phosphorescent material and a light-emitting layer formed therefrom, but also because it makes, for example, a reduction in the film quality caused by gas generation, recrystallization, molecule migration and the like, and an increase in the impurity concentration due to thermal decomposition of materials unlikely to occur. On the other hand, the molecular weight of the phosphorescent material is preferably low from the standpoint of the ease of purifying an organic compound. (Host Material) In an organic electroluminescent element in which the polymer of the present invention is used as a charge transporting material constituting at least either one of a hole injection layer and a hole transport layer, when a light-emitting layer is composed of a phosphorescent material, a host material thereof is preferably the following material. <Host Material> The host material of the light-emitting layer is a material having a skeleton with excellent charge transportability, which is preferably selected from electron transporting materials, hole transporting materials, and bipolar materials capable of transporting both electrons and holes. (Skeleton with Excellent Charge Transportability) Specific examples of the skeleton with excellent charge transportability include an aromatic structure, an aromatic amine structure, a triarylamine structure, a dibenzofuran structure, a naphthalene structure, a phenanthrene structure, a phthalocyanine structure, a porphyrin structure, a thiophene structure, a benzylphenyl structure, a fluorene structure, a quinacridone structure, a triphenylene structure, a carbazole structure, a pyrene structure, an anthracene structure, a phenanthroline structure, a quinoline structure, a pyridine structure, a pyrimidine structure, a triazine structure, an oxadiazole structure, and an imidazole structure. (Electron Transporting Material) From the standpoint of using a material having a relatively stable structure with excellent electron transportability, the electron transporting material is more preferably a compound having a pyridine structure, a pyrimidine structure, or a triazine structure, still more preferably a compound having a pyrimidine structure or a triazine structure. (Hole Transporting Material) The hole transporting material is a compound having a skeleton with excellent hole transportability and, among the above-exemplified principal skeletons with excellent charge transportability, the skeleton with excellent hole transportability is preferably a carbazole structure, a dibenzofuran structure, a triarylamine structure, a naphthalene structure, a phenanthrene structure, or a pyrene structure, more preferably a carbazole structure, a dibenzofuran structure, or a triarylamine structure. (Fused Ring Structure of Three or More Rings) The host material of the light-emitting layer preferably has a fused ring structure of three or more rings, and it is more preferred that the host material be a compound having two or more fused ring structures of three or more rings, or a compound having at least one fused ring structure of five or more rings. When the host material is any of these compounds, the molecular rigidity is increased, so that an effect of reducing the extent of molecular motion occurring in response to heat is likely to be obtained. Further, from the standpoint of the charge transportability and the durability of the material, the fused ring structure of three or more rings and the fused ring structure of five or more rings preferably contain an aromatic hydrocarbon ring or an aromatic heterocyclic ring. Specific examples of the fused ring structure of three or more rings include an anthracene structure, a phenanthrene structure, a pyrene structure, a chrysene structure, a naphthacene structure, a triphenylene structure, a fluorene structure, a benzofluorene structure, an indenofluorene structure, an indolofluorene structure, a carbazole structure, an indenocarbazole structure, an indolocarbazole structure, a dibenzofuran structure, and a dibenzothiophene structure. From the standpoints of the charge transportability and the solubility, at least one selected from the group consisting of a phenanthrene structure, a fluorene structure, an indenofluorene structure, a carbazole structure, an indenocarbazole structure, an indolocarbazole structure, a dibenzofuran structure, and a dibenzothiophene structure is preferred, and a carbazole structure or an indolocarbazole structure is more preferred from the standpoint of the durability against a charge. (Triazine, Pyrimidine) In the present invention, from the standpoint of the durability of the organic electroluminescent element against a charge, at least one host material of the light-emitting layer is preferably a material having a pyrimidine skeleton or a triazine skeleton. (Range of Molecular Weight) The host material of the light-emitting layer is preferably a high-molecular-weight material because of its excellent flexibility. A light-emitting layer formed from such a material having excellent flexibility is preferred as a light-emitting layer of an organic electroluminescent element formed on a flexible substrate. When the host material contained in the light-emitting layer is a high-molecular-weight material, the weight-average molecular weight thereof is preferably 5,000 or higher and 1,000,000 or less, more preferably 10,000 or higher and 500,000 or less, still more preferably 10,000 or higher and 100,000 or less. Meanwhile, from the standpoints of the ease of synthesis and purification, the ease of designing the electron transport performance and the hole transport performance, and the ease of adjusting the viscosity when the light-emitting layer is dissolved in a solvent, the host material of the light-emitting layer preferably has a low molecular weight. When the host material contained in the light-emitting layer is a low-molecular-weight material, the molecular weight thereof is preferably 5,000 or less, more preferably 4,000 or less, particularly preferably 3,000 or less, most preferably 2,000 or less, but usually 300 or higher, preferably 350 or higher, more preferably 400 or higher. (Blue Fluorescent Layer) In an organic electroluminescent element in which the polymer of the present invention is used as a charge transporting material constituting at least either one of a hole injection layer and a hole transport layer, when a light-emitting layer is composed of a fluorescent material, the fluorescent material is preferably the following blue fluorescent material. (Blue Fluorescent Material) A light-emitting material for a blue fluorescent layer is not particularly restricted; however, it is preferably a material represented by the following Formula (211). In Formula (211),Ar241represents an aromatic hydrocarbon fused-ring structure optionally having a substituent;Ar242and Ar243each independently represent an alkyl group or an aromatic hydrocarbon group, which optionally has a substituent, or a group formed by these groups that are bound with each other; andn41 represents 1 to 4. Ar241preferably represents an aromatic hydrocarbon fused-ring structure having 10 to 30 carbon atoms, and specific examples thereof include naphthalene, acenaphthene, fluorene, anthracene, phenanthrene, fluoranthene, pyrene, tetracene, chrysene, and perylene structures. Ar241is more preferably an aromatic hydrocarbon fused-ring structure having 12 to 20 carbon atoms, and specific examples thereof include acenaphthene, fluorene, anthracene, phenanthrene, fluoranthene, pyrene, tetracene, chrysene, and perylene structures. Ar241is still more preferably an aromatic hydrocarbon fused-ring structure having 16 to 18 carbon atoms, and specific examples thereof include fluoranthene, pyrene, and chrysene structures. Further, n41 is 1 to 4, preferably 1 to 3, more preferably 1 to 2, most preferably 2. (Substituents of Ar241, Ar242and Ar243) The optional substituents of Ar241, Ar242and Ar243are each preferably a group selected from the above-described substituents Z, more preferably a hydrocarbon group included in the substituents Z, still more preferably a hydrocarbon group preferred among the substituents Z. (Host Material for Blue Fluorescent Layer) In an organic electroluminescent element in which the polymer of the present invention is used as a charge transporting material constituting at least either one of a hole injection layer and a hole transport layer, when a light-emitting layer is composed of a fluorescent material, a host material thereof is preferably the following material. The host material for the blue fluorescent layer is not particularly restricted; however, it is preferably a material represented by the following Formula (212). In Formula (212),R241and R242each independently represent a structure represented by Formula (213);R243represents a substituent and, when there are plural R243s, the R243are optionally the same or different; andn43 represents 0 to 8. Ar244and Ar245each independently represent an aromatic hydrocarbon structure optionally having a substituent, or an aromatic heterocyclic structure optionally having a substituent,when there are plural Ar244s and plural Ar245s, the Ar244s and the Ar245s are each optionally the same or different,n44 represents 1 to 5, andn45 represents 0 to 5. Ar244is preferably a monocyclic or fused-ring aromatic hydrocarbon structure having 6 to 30 carbon atoms which optionally has a substituent, more preferably a monocyclic or fused-ring aromatic hydrocarbon structure having 6 to 12 carbon atoms which optionally has a substituent. Ar245is preferably a monocyclic or fused-ring aromatic hydrocarbon structure having 6 to 30 carbon atoms which optionally has a substituent, or a fused-ring aromatic heterocyclic structure having 6 to 30 carbon atoms which optionally has a substituent, more preferably a monocyclic or fused-ring aromatic hydrocarbon structure having 6 to 12 carbon atoms which optionally has a substituent, or a fused-ring aromatic heterocyclic structure having 12 carbon atoms which optionally has a substituent. Further, n44 is preferably 1 to 3, more preferably 1 or 2, and n45 is preferably 0 to 3, more preferably 0 to 2. (Substituents of R243, Ar244and Ar245) The optional substituents of Ar243, Ar244and Ar245are each preferably a group selected from the above-described substituents Z, more preferably a hydrocarbon group included in the substituents Z, still more preferably a hydrocarbon group preferred among the substituents Z. (Molecular Weight) The molecular weight of the light-emitting material for the blue fluorescent layer and that of the host material for the blue fluorescent layer are preferably 5,000 or less, more preferably 4,000 or less, particularly preferably 3,000 or less, most preferably 2,000 or less, but usually 300 or higher, preferably 350 or higher, more preferably 400 or higher. <Organic Electroluminescent Element> The organic electroluminescent element of the present invention is an organic electroluminescent element including, on a substrate: an anode; a cathode; and organic layers between the anode and the cathode, wherein the organic layer includes a layer formed by a wet film-forming method using the composition for an organic electroluminescent element according to the present invention that contains the polymer of the present invention. In the organic electroluminescent element of the present invention, the layer formed by the wet film-forming method is preferably at least one of a hole injection layer and a hole transport layer and, particularly, the organic layers preferably include a hole injection layer, a hole transport layer, and a light-emitting layer, all of which are formed by a wet film-forming method. In the present invention, the term “wet film-forming method” refers to a film formation method, namely a method of forming a film by a wet process in which a coating method, such as spin coating, dip coating, die coating, bar coating, blade coating, roll coating, spray coating, capillary coating, ink-jet coating, nozzle printing, screen printing, gravure printing or flexographic printing, is employed, and the resulting coating film is subsequently dried. Among such film formation methods, for example, spin coating, spray coating, ink-jet coating, and nozzle printing are preferred. As one example of the structure of the organic electroluminescent element of the present invention, the FIGURE is a schematic view (cross-section) illustrating a structural example of an organic electroluminescent element8. In the FIGURE, the symbols1,2,3,4,5,6, and7represent a substrate, an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode, respectively. One exemplary embodiment of the organic electroluminescent element of the present invention, including the layer constitution and general formation methods of the respective layers, will now be described referring to the FIGURE. [Substrate] The substrate1serves as a support of the organic electroluminescent element and usually, for example, a plate of quartz or glass, a metal plate, a metal foil, or a plastic film or sheet is used. Particularly, the substrate1is preferably a glass plate, or a transparent plate of a synthetic resin, such as polyester, polymethacrylate, polycarbonate, or polysulfone. The substrate is preferably made of a material having excellent gas barrier properties since such a material makes the organic electroluminescent element unlikely to be deteriorated by the ambient air. Thus, particularly in the case of using a substrate made of a material having poor gas barrier properties such as a synthetic resin substrate, it is preferred to improve the gas barrier properties by arranging a dense silicon oxide film or the like on at least one side of the substrate. [Anode] The anode2bears a function of injecting holes into a layer on the side of a light-emitting layer5. The anode2is usually composed of, for example, a metal such as aluminum, gold, silver, nickel, palladium, or platinum; a metal oxide, such as an oxide of indium and/or tin; a metal halide, such as copper iodide; or a conductive polymer, such as carbon black, poly(3-methylthiophene), polypyrrole, or polyaniline. The anode2is usually formed by a dry method, such as sputtering or vacuum vapor deposition, in many cases. When a material such as metal fine particles of silver or the like, fine particles of copper iodide or the like, carbon black, conductive metal oxide fine particles, or conductive polymer fine powder is used for the formation of the anode, the anode can be formed by dispersing the material in an appropriate binder resin solution and applying the resultant onto the substrate. Further, when a conductive polymer is used, the anode can be formed by directly forming a thin film on the substrate through electrolytic polymerization, or by applying the conductive polymer onto the substrate (Appl. Phys. Lett., Vol.60, p. 2711, 1992). The anode2usually has a single-layer structure; however, the anode2may have a laminated structure as appropriate. When the anode2has a laminated structure, a different conductive material may be laminated on the anode that is the first layer. The thickness of the anode2may be decided in accordance with the required transparency, material and the like. When a particularly high transparency is required, the anode2has such a thickness that provides a visible light transmittance of preferably 60% or higher, more preferably 80% or higher. The thickness of the anode2is usually 5 nm or greater, preferably 10 nm or greater, but usually 1,000 nm or less, preferably 500 nm or less. Meanwhile, when transparency is not required, the anode2may have any thickness in accordance with the required strength and the like and, in this case, the anode2may have the same thickness as the substrate. In cases where other layer is formed on the surface of the anode2, it is preferred that, prior to the formation of the layer, the anode2be treated with UV/ozone, oxygen plasma, argon plasma or the like so as not only to remove impurities from the surface of the anode2, but also to adjust the ionization potential and thereby improve the hole injection properties. [Hole Injection Layer] A layer that bears a function of transporting holes from the side of the anode2to the side of the light-emitting layer5is usually referred to as “hole injection/transport layer” or “hole transport layer”. When there are two or more layers each having the function of transporting holes from the side of the anode2to the side of the light-emitting layer5, the layer closest to the anode may be referred to as “hole injection layer3”. The hole injection layer3is preferably formed since it enhances the function of transporting holes from the anode2to the side of the light-emitting layer5. When the hole injection layer3is formed, it is usually formed on the anode2. The thickness of the hole injection layer3is usually 1 nm or greater, preferably 5 nm or greater, but usually 1,000 nm or less, preferably 500 nm or less. As a method of forming the hole injection layer, a vacuum vapor deposition method or a wet film-forming method may be employed. The hole injection layer is preferably formed by a wet film-forming method because of its excellent film-forming properties. The hole injection layer3preferably contains a hole-transporting compound, more preferably contains both a hole-transporting compound and an electron-accepting compound. Further, the hole injection layer preferably contains a cation radical compound, more preferably contains both a cation radical compound and a hole-transporting compound. A general method of forming the hole injection layer is described below; however, in the organic electroluminescent element of the present embodiment, the hole injection layer is preferably formed by a wet film-forming method using the above-described composition for an organic electroluminescent element according to one embodiment of the present invention. [Hole-Transporting Compound] The composition for the formation of hole injection layer usually contains a hole-transporting compound that yields the hole injection layer3. In the case of employing a wet film-forming method, the composition usually further contains a solvent. The composition for the formation of hole injection layer preferably has excellent hole transportability and is capable of efficiently transporting the holes injected thereinto. Therefore, it is preferred that the composition have a high hole mobility and be unlikely to generate impurities acting as a trap during the production, use and the like. It is also preferred that the composition have excellent stability, a low ionization potential, and a high transparency to visible light. Particularly, when the hole injection layer is in contact with the light-emitting layer, the composition is preferably one that does not cause quenching of the light emitted from the light-emitting layer, or one that does not reduce the luminous efficiency by forming an exciplex with the light-emitting layer. From the standpoint of a charge injection barrier between the anode and the hole injection layer, the hole-transporting compound is preferably a compound having an ionization potential of 4.5 eV to 6.0 eV Examples of the hole-transporting compound include aromatic amine compounds, phthalocyanine compounds, porphyrin compounds, oligothiophene compounds, polythiophene compounds, benzylphenyl compounds, compounds containing a tertiary amine linked via a fluorene group, hydrazone compounds, silazane compounds, and quinacridone compounds. Among the above-exemplified compounds, from the standpoints of the amorphousness and the visible light transmittance, an aromatic amine compound is preferred, and an aromatic tertiary amine compound is particularly preferred. It is noted here that the term “aromatic tertiary amine compound” used herein refers to a compound having an aromatic tertiary amine structure, and encompasses compounds having a group derived from an aromatic tertiary amine. The type of the aromatic tertiary amine compound is not particularly restricted; however, it is preferred to use a polymer compound having a weight-average molecular weight of 1,000 or higher and 1,000,000 or less (polymerized compound having a series of repeating units) since, because of its surface-smoothing effect, uniform light emission is likely to be attained. The hole injection layer3preferably contains the above-described electron-accepting compound and the above-described cation radical compound since this can improve the electroconductivity of the hole injection layer by oxidation of the hole-transporting compound. A cation radical compound derived from a polymer compound, such as PEDOT/PSS (Adv. Mater.2000, Vol. 12, p. 481) or emeraldine hydrochloride (J. Phys. Chem.,1990, Vol. 94, p. 7716), can also be generated by oxidative polymerization (dehydrogenation polymerization). The term “oxidative polymerization” used herein refers to chemical or electrochemical oxidation of a monomer in an acidic solution using peroxodisulfate or the like. In this oxidative polymerization (dehydrogenation polymerization), the monomer is polymerized through oxidation, and a cation radical, whose counter anion is an anion derived from the acidic solution, is generated by removal of an electron from a repeating unit of the resulting polymer. [Formation of Hole Injection Layer by Wet Film-Forming Method] In the case of forming the hole injection layer3by a wet film-forming method, usually, the hole injection layer3is formed by mixing a material yielding the hole injection layer with a solvent capable of dissolving the material (solvent for hole injection layer) to prepare a film-forming composition (composition for the formation of hole injection layer), applying the thus obtained composition for the formation of hole injection layer onto a layer (usually, the anode) that corresponds to the underlayer of the resulting hole injection layer, and subsequently drying the composition. In the composition for the formation of hole injection layer, the hole-transporting compound may have any concentration as long as the effects of the present invention are not markedly impaired; however, a lower concentration is more preferred from the standpoint of the thickness uniformity, while a higher concentration is more preferred from the standpoint of preventing a defect from occurring in the hole injection layer. Specifically, the concentration of the hole-transporting compound is preferably 0.01% by mass or higher, more preferably 0.1% by mass or higher, particularly preferably 0.5% by mass or higher, but preferably 70% by mass or lower, more preferably 60% by mass or lower, particularly preferably 50% by mass or lower. Examples of the solvent include ether-based solvents, ester-based solvents, aromatic hydrocarbon-based solvents, and amide-based solvents. Examples of the ether-based solvents include: aliphatic ethers, such as ethylene glycol dimethyl ether, ethylene glycol diethyl ether, and propylene glycol-1-monomethyl ether acetate (PGMEA); and aromatic ethers, such as 1,2-dimethoxybenzene, 1,3-dimethoxybenzene, anisole, phenetole, 2-methoxytoluene, 3-methoxytoluene, 4-methoxytoluene, 2,3-dimethylanisole, and 2,4-dimethylanisole. Examples of the ester-based solvents include aromatic esters, such as phenyl acetate, phenyl propionate, methyl benzoate, ethyl benzoate, propyl benzoate, and n-butyl benzoate. Examples of the aromatic hydrocarbon-based solvents include toluene, xylene, cyclohexylbenzene, 3-isopropylbiphenyl, 1,2,3,4-tetramethylbenzene, 1,4-diisopropylbenzene, and methylnaphthalene. Examples of the amide-based solvents include N,N-dimethylformamide and N,N-dimethylacetamide. In addition to the above-described solvents, dimethyl sulfoxide and the like can be used as well. The formation of the hole injection layer3by a wet film-forming method is usually performed by preparing the composition for the formation of hole injection layer, subsequently applying the composition onto a layer (usually, the anode2) that corresponds to the underlayer of the resulting hole injection layer3, and then drying the composition. The hole injection layer3is, after being formed, usually dried as a coating film by heating, vacuum drying, or the like. [Formation of Hole Injection Layer by Vacuum Vapor Deposition Method] In the case of forming the hole injection layer3by a vacuum vapor deposition method, usually, one or more constituent materials of the hole injection layer3(e.g., the above-described hole-transporting compound and electron-accepting compound) are placed in a crucible that is arranged inside a vacuum vessel (when two or more materials are used, the materials are usually placed in individual crucibles), and the inside of the vacuum vessel is evacuated to about 10−4Pa using a vacuum pump, after which the crucible is heated (when two or more materials are used, each of the crucibles is usually heated individually) to evaporate the materials in the crucible while controlling the evaporation amount of the materials (when two or more materials are used, the materials are usually each independently evaporated while controlling the evaporation amount), whereby the hole injection layer is formed over the anode on the substrate that is placed facing the crucible. When two or more materials are used, it is also possible to form the hole injection layer by placing a mixture of the materials in a crucible and subsequently heating and evaporating the mixture. The degree of vacuum during the vapor deposition is not restricted as long as the effects of the present invention are not markedly impaired; however, it is usually 0.1×10−6Torr (0.13×10−4Pa) or higher and 9.0×10−6Torr (12.0×10−4Pa) or lower. The vapor deposition rate is also not restricted as long as the effects of the present invention are not markedly impaired; however, it is usually 0.1 Å/sec or more and 5.0 Å/sec or less. The film-forming temperature in the vapor deposition is also not restricted as long as the effects of the present invention are not markedly impaired; however, it is preferably 10° C. or higher and 50° C. or lower. The hole injection layer3may be crosslinked in the same manner as the below-described hole transport layer4. [Hole Transport Layer] The hole transport layer4is a layer that bears a function of transporting holes from the side of the anode2to the side of the light-emitting layer5. In the organic electroluminescent element of the present invention, the hole transport layer4is not an indispensable layer; however, this layer is preferably formed from the standpoint of enhancing the function of transporting holes from the anode2to the light-emitting layer5. When the hole transport layer4is formed, it is usually formed between the anode2and the light-emitting layer5. In the presence of the above-described hole injection layer3, the hole transport layer4is formed between the hole injection layer3and the light-emitting layer5. The thickness of the hole transport layer4is usually 5 nm or greater, preferably 10 nm or greater, but usually 300 nm or less, preferably 100 nm or less. As a method of forming the hole transport layer4, a vacuum vapor deposition method or a wet film-forming method may be employed. The hole transport layer4is preferably formed by a wet film-forming method because of its excellent film-forming properties. A general method of forming the hole transport layer is described below; however, in the organic electroluminescent element of the present embodiment, the hole transport layer is preferably formed by a wet film-forming method using the above-described composition for an organic electroluminescent element. The hole transport layer4usually contains a hole-transporting compound. The hole-transporting compound contained in the hole transport layer4is preferably the polymer of the present invention or, when the polymer of the present invention has a crosslinkable group, a polymer obtained by crosslinking the polymer of the present invention. Examples of preferred hole-transporting compound include, in addition to the polymer of the present invention: the above-exemplified hole-transporting compounds; aromatic diamines which contain two or more tertiary amines and in which two or more fused aromatic rings are substituted with nitrogen atoms, such as 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (Japanese Unexamined Patent Application Publication No. H5-234681); aromatic amine compounds having a starburst structure, such as 4,4′,4″-tris(1-naphthylphenylamino)triphenylamine (J. Lumin., Vol. 72-74, p. 985, 1997); aromatic amine compounds composed of a tetramer of triphenylamine (Chem. Commun., p. 2175, 1996); spiro compounds, such as 2,2′,7,7′-tetrakis-(diphenylamino)-9,9′-spirobifluorene (Synth. Metals, Vol. 91, p. 209, 1997); and carbazole derivatives, such as 4,4′-N,N-dicarbazolebiphenyl. The hole transport layer4may also contain, for example, a polyvinylcarbazole, a polyvinyltriphenylamine (Japanese Unexamined Patent Application Publication No. H7-53953), or a polyarylene ether sulfone containing tetraphenylbenzidine (Polym. Adv. Tech., Vol. 7, p. 33, 1996). [Formation of Hole Transport Layer by Wet Film-Forming Method] In the case of forming the hole transport layer by a wet film-forming method, the hole transport layer is usually formed in the same manner as in the above-described case of forming the hole injection layer by a wet film-forming method, except that a composition for the formation of hole transport layer is used in place of the composition for the formation of hole injection layer. When a wet film-forming method is employed to form the hole transport layer, usually, the composition for the formation of hole transport layer further contains a solvent. As the solvent used in the composition for the formation of hole transport layer, the same solvent as the one used in the composition for the formation of hole injection layer can be used. The concentration of the hole-transporting compound in the composition for the formation of hole transport layer may be in the same range as the concentration of the hole-transporting compound in the composition for the formation of hole injection layer. The formation of the hole transport layer by a wet film-forming method can be performed in the same manner as in the above-described method of forming the hole injection layer. [Formation of Hole Transport Layer by Vacuum Vapor Deposition Method] Also in the case of forming the hole transport layer by a vacuum vapor deposition method, the hole transport layer is usually formed in the same manner as in the above-described case of forming the hole injection layer by a vacuum vapor deposition method, except that the composition for the formation of hole transport layer is used in place of the composition for the formation of hole injection layer. The film-forming conditions in the vapor deposition, such as the degree of vacuum, the vapor deposition rate and the temperature, can be the same as those conditions in the above-described vacuum vapor deposition of the hole injection layer. [Light-Emitting Layer] The light-emitting layer5is a layer that bears a function of emitting light upon being excited by recombination of holes injected from the anode2and electrons injected from the cathode7when an electric field is applied to a pair of electrodes. The light-emitting layer5is a layer formed between the anode2and the cathode7. In the presence of a hole injection layer on the anode, the light-emitting layer is formed between the hole injection layer and the cathode and, in the presence of a hole transport layer on the anode, the light-emitting layer is formed between the hole transport layer and the cathode. The light-emitting layer5may have any thickness as long as the effects of the present invention are not markedly impaired; however, a larger thickness is more preferred from the standpoint of preventing a defect from occurring in the layer, while a smaller thickness is more preferred from the standpoint of lowering the driving voltage. Accordingly, the thickness of the light-emitting layer5is preferably 3 nm or greater, more preferably 5 nm or greater, but usually preferably 200 nm or less, more preferably 100 nm or less. The light-emitting layer5contains at least a material having a light-emitting property (light-emitting material), and preferably contains a host material. Light-emitting materials and host materials that are preferred in the organic electroluminescent element of the present invention are as described above. [Formation of Light-Emitting Layer by Wet Film-Forming Method] As a method of forming the light-emitting layer, a vacuum vapor deposition method or a wet film-forming method may be employed; however, a wet film-forming method is preferred because of its excellent film-forming properties, and a spin-coating method or an ink-jet method is more preferred. It is particularly preferred to employ a wet film-forming method since lamination is easily performed by a wet film-forming method when a hole injection layer or a hole transport layer is formed as an underlayer of the light-emitting layer using the above-described composition for an organic electroluminescent element. In the case of forming the light-emitting layer by a wet film-forming method, the light-emitting layer is usually formed in the same manner as in the above-described case of forming the hole injection layer by a wet film-forming method, except that a composition for the formation of light-emitting layer, which is prepared by mixing a material yielding the light-emitting layer with a solvent capable of dissolving the material (solvent for light-emitting layer), is used in place of the composition for the formation of hole injection layer. Examples of the solvent include ether-based solvents, ester-based solvents, aromatic hydrocarbon-based solvents and amide-based solvents, which are exemplified above in relation to the formation of the hole injection layer, as well as alkane-based solvents, halogenated aromatic hydrocarbon-based solvents, aliphatic alcohol-based solvents, alicyclic alcohol-based solvents, aliphatic ketone-based solvents, and alicyclic ketone-based solvents. Specific examples of the solvent are described below; however, the solvent is not restricted thereto as long as the effects of the present invention are not impaired. Specific examples of the solvent include: aliphatic ether-based solvents, such as ethylene glycol dimethyl ether, ethylene glycol diethyl ether, and propylene glycol-1-monomethyl ether acetate (PGMEA); aromatic ether-based solvents, such as 1,2-dimethoxybenzene, 1,3-dimethoxybenzene, anisole, phenetole, 2-methoxytoluene, 3-methoxytoluene, 4-methoxytoluene, 2,3-dimethylanisole, 2,4-dimethylanisole, and diphenyl ether; aromatic ester-based solvents, such as phenyl acetate, phenyl propionate, methyl benzoate, ethyl benzoate, propyl benzoate, and n-butyl benzoate; aromatic hydrocarbon-based solvents, such as toluene, xylene, mesitylene, cyclohexylbenzene, tetralin, 3-isopropylbiphenyl, 1,2,3,4-tetramethylbenzene, 1,4-diisopropylbenzene, and methylnaphthalene; amide-based solvents, such as N,N-dimethylformamide and N,N-dimethylacetamide; alkane-based solvents, such as n-decane, cyclohexane, ethylcyclohexane, decalin, and bicyclohexane; halogenated aromatic hydrocarbon-based solvents, such as chlorobenzene, dichlorobenzene, and trichlorobenzene; aliphatic alcohol-based solvents, such as butanol and hexanol; alicyclic alcohol-based solvents, such as cyclohexanol and cyclooctanol; aliphatic ketone-based solvents, such as methyl ethyl ketone and dibutyl ketone; and alicyclic ketone-based solvents, such as cyclohexanone, cyclooctanone, and fenchone. Among these solvents, alkane-based solvents and aromatic hydrocarbon-based solvents are particularly preferred. [Hole-Blocking Layer] The hole-blocking layer may be arranged between the light-emitting layer5and the below-described electron injection layer. The hole-blocking layer is a layer that is laminated on the light-emitting layer5, in contact with the interface of the light-emitting layer5on the side of the cathode7. The hole-blocking layer has a role of preventing holes moving from the anode2from reaching the cathode7as well as a role of efficiently transporting electrons injected from the cathode7toward the light-emitting layer5. As for the physical properties required for a material constituting the hole-blocking layer, the material is required to have, for example, a high electron mobility, a low hole mobility, a large energy gap (difference between HOMO and LUMO), and a high excited triplet level (T1). Examples of the material of the hole-blocking layer that satisfies these conditions include: mixed ligand complexes, such as bis(2-methyl-8-quinolinolato)(phenolate)aluminum and bis(2-methyl-8-quinolinolato)(triphenylsilanolato)aluminum; metal complexes, such as a bis(2-methyl-8-quinolinolato)aluminum-μ-oxo-bis(2-methyl-8-quinolinolato)aluminum binuclear metal complex; styryl compounds, such as distyryl biphenyl derivatives (Japanese Unexamined Patent Application Publication No. H11-242996); triazole derivatives, such as 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (Japanese Unexamined Patent Application Publication No. H7-41759); and phenanthroline derivatives, such as bathocuproin (Japanese Unexamined Patent Application Publication No. H10-79297). Further, the compounds described in WO 2005/022962 which have at least one pyridine ring substituted at the 2-, 4-, and 6-positions are also preferred as the material of the hole-blocking layer. A method of forming the hole-blocking layer is not restricted. Therefore, the hole-blocking layer can be formed by a wet film-forming method, a vapor deposition method, or any other method. The hole-blocking layer may have any thickness as long as the effects of the present invention are not markedly impaired; however, the thickness of the hole-blocking layer is usually 0.3 nm or greater, preferably 0.5 nm or greater, but usually 100 nm or less, preferably 50 nm or less. [Electron Transport Layer] The electron transport layer6is arranged between the light-emitting layer5and the electron injection layer for the purpose of further improving the current efficiency of the element. The electron transport layer6is composed of a compound that is capable of efficiently transporting electrons injected from the cathode7toward the light-emitting layer5between electrodes to which an electric field applied. An electron-transporting compound used in the electron transport layer6is required to be a compound that allows highly efficient electron injection from the cathode7or the electron injection layer, has a high electron mobility, and is capable of efficiently transporting injected electrons. Specific examples of the electron-transporting compound used in the electron transport layer include metal complexes such as an aluminum complex of 8-hydroxyquinoline (Japanese Unexamined Patent Application Publication No. S59-194393), metal complexes of 10-hydroxybenzo[h]quinoline, oxadiazole derivatives, distyrylbiphenyl derivatives, silole derivatives, 3-hydroxyflavone metal complexes, 5-hydroxyflavone metal complexes, benzoxazole metal complexes, benzothiazole metal complexes, trisbenzimidazolyl benzene (U.S. Pat. No. 5,645,948), quinoxaline compounds (Japanese Unexamined Patent Application Publication No. H6-207169), phenanthroline derivatives (Japanese Unexamined Patent Application Publication No. H5-331459), 2-t-butyl-9,10-N,N-dicyanoanthraquinonediimine, n-type hydrogenated amorphous silicon carbide, n-type zinc sulfide, and n-type zinc selenide. The thickness of the electron transport layer6is usually 1 nm or greater, preferably 5 nm or greater, but usually 300 nm or less, preferably 100 nm or less. The electron transport layer6is laminated on the hole-blocking layer by a wet film-forming method or a vacuum vapor deposition method in the same manner as described above. Usually, a vacuum vapor deposition method is employed. [Electron Injection Layer] The electron injection layer has a role of efficiently injecting electrons injected thereto from the cathode7into the electron transport layer6or the light-emitting layer5. For efficient electron injection, the material constituting the electron injection layer is preferably a metal having a low work function. Examples thereof include: alkali metals, such as sodium and cesium; and alkaline earth metals, such as barium and calcium. Usually, the thickness of the electron injection layer is preferably 0.1 nm or greater and 5 nm or less. Further, it is also preferred to dope an organic electron transport material typified by a nitrogen-containing heterocyclic compound (e.g., bathophenanthroline) or a metal complex (e.g., an aluminum complex of 8-hydroxyquinoline) with an alkali metal such as sodium, potassium, cesium, lithium, or rubidium (as described in, for example, Japanese Unexamined Patent Application Publication No. H10-270171, Japanese Unexamined Patent Application Publication No. 2002-100478, or Japanese Unexamined Patent Application Publication No. 2002-100482) since this allows the electron injection layer to have both an improved electron injection/transport capacity and excellent film quality. The thickness of the electron injection layer is in a range of usually 5 nm or greater, preferably 10 nm or greater, but usually 200 nm or less, preferably 100 nm or less. The electron injection layer is formed by a wet film-forming method or a vacuum vapor deposition method through lamination on the light-emitting layer5, or on the hole-blocking layer or the electron transport layer6that is formed on the light-emitting layer5. The details of the wet film-forming method are the same as those described above for the light-emitting layer. In some cases, the hole-blocking layer, the electron transport layer, and the electron injection layer may be formed into a single layer by an operation of co-doping with an electron transport material and a lithium complex. [Cathode] The cathode7has a role of injecting electrons into a layer on the side of the light-emitting layer5(e.g., the electron injection layer or the light-emitting layer). As a material of the cathode7, the material used for the above-described anode2can be used; however, from the standpoint of attaining efficient electron injection, it is preferred to use a metal having a low work function and, for example, a metal such as tin, magnesium, indium, calcium, aluminum or silver, or an alloy of these metals is used. Specific examples of the cathode7include low-work-function alloy electrodes made of a magnesium-silver alloy, a magnesium-indium alloy, an aluminum-lithium alloy, or the like. From the standpoint of the stability of the element, it is preferred to protect the cathode made of a low-work-function metal by laminating thereon a metal layer that has a high work function and is stable in the atmosphere. Examples of the metal to be laminated include aluminum, silver, copper, nickel, chromium, gold, and platinum. The thickness of the cathode is usually the same as that of the anode. [Other Layers] The organic electroluminescent element of the present invention may further include other layers as long as the effects of the present invention are not markedly impaired. In other words, other arbitrary layers may be arranged between the anode and the cathode. [Other Element Configuration] The organic electroluminescent element of the present invention may have a structure that is opposite to the one descried above. That is, on the substrate, the cathode, the electron injection layer, the electron transport layer, the hole-blocking layer, the light-emitting layer, the hole transport layer, the hole injection layer, and the anode may be sequentially laminated in the order mentioned. When the organic electroluminescent element of the present invention is applied to an organic electroluminescent device, the organic electroluminescent element of the present invention may be used as a single organic electroluminescent element, or may be used in a configuration in which plural organic electroluminescent elements are arranged in an array, or a configuration in which an anode and a cathode are arranged in an X-Y matrix form. <Organic EL Display Device> The organic EL display device (organic electroluminescent element display device) of the present invention includes the above-described organic electroluminescent element of the present invention. The organic EL display device of the present invention is not particularly restricted in terms of model and structure, and can be assembled in accordance with a conventional method using the organic electroluminescent element of the present invention. The organic EL display device of the present invention can be assembled by, for example, the method described in “Organic EL Display” (Ohmsha, Ltd., published on Aug. 20, 2004, written by Shizuo Tokito, Chihaya Adachi, and Hideyuki Murata). <Organic EL Lighting> The organic EL lighting (organic electroluminescent element lighting) of the present invention includes the above-described organic electroluminescent element of the present invention. The organic EL lighting of the present invention is not particularly restricted in terms of model and structure, and can be assembled in accordance with a conventional method using the organic electroluminescent element of the present invention. EXAMPLES The present invention will now be described more concretely by way of Examples thereof. The present invention is, however, not restricted to the below-described Examples, and any modification can be made without departing from the gist of the present invention. <Synthesis of Intermediates> [Synthesis of Compound 5] In a 1-L flask, a solution containing 270 ml of toluene, 135 ml of ethanol, 20.0 g (44.8 mmol) of the compound 4 (manufactured by FUJIFILM Wako Pure Chemical Corporation), 50.72 g (179.3 mmol) of 1-bromo-4-iodobenzene, and 191 ml of an aqueous potassium phosphate solution (2M, i.e. concentration=2 mol/L) was vacuum-degassed, and the flask was purged with nitrogen. The solution was heated in a nitrogen stream and stirred for 30 minutes. Subsequently, 0.63 g (0.90 mmol) of bis(triphenylphosphine)palladium (II) dichloride was added, and the resultant was refluxed for 6 hours. Water was added to this reaction solution, followed by extraction with toluene and treatment with MgSO4and activated earth. The resulting toluene solution was heated to reflux, and insoluble matter was subsequently removed by filtration, after which the solution was recrystallized to obtain the compound 5 as a colorless solid (amount: 14.2 g, yield: 60.2%). [Synthesis of Compound 7] The compound 7 was synthesized in the same manner as the compound 5, except that the compound 6 (manufactured by Tokyo Chemical Industry Co., Ltd.) was used in place of the compound 4. [Synthesis of Compound 9] The compound 9 was synthesized in the same manner as the compound 5, except that the compound 8 (manufactured by Tokyo Chemical Industry Co., Ltd.) was used in place of the compound 4. [Synthesis of Compound 10] The compound 10 was synthesized in the same manner as the compound 5, except that 1-bromo-4-iodobenzene was used in place of 5-bromo-2-iodotoluene. [Synthesis of Compound 11] In a nitrogen stream, 100 ml of dimethyl sulfoxide, the compound 7 (5.0 g, 7.43 mmol), bis(pinacolato)diboron (5.66 g, 22.29 mmol), and potassium acetate (4.4 g, 44.58 mmol) were added to a 300-ml flask and stirred at 60° C. for 30 minutes. Subsequently, 1,1′-bis(diphenylphosphino)ferrocene-palladium (II) dichloride-dichloromethane [PdCl2(dppf)CH2Cl2] (0.60 g, 0.74 mmol) was added, and the resulting mixture was allowed to react at 85° C. for 3 hours. This reaction solution was vacuum-filtered, and the resulting filtrate was extracted with toluene, dried over anhydrous magnesium sulfate, and then partially purified with activated earth. The thus obtained partial purification product was further purified by column chromatography (developer: hexane/ethyl acetate=95/5), whereby the compound 11 (4.5 g) was obtained. [Synthesis of Compound 12] The compound 12 was synthesized in the same manner as the compound 10, except that the compound 11 was used in place of the compound 4. [Synthesis of Compound 13] The compound 13 was synthesized in the same manner as the compound 11, except that the compound 9 was used in place of the compound 7. [Synthesis of Compound 14] The compound 14 was synthesized in the same manner as the compound 10, except that the compound 13 was used in place of the compound 4. [Synthesis of Compound 16] The compound 16 was synthesized in the same manner as the compound 10, except that the compound 6 (manufactured by Tokyo Chemical Industry Co., Ltd.) was used in place of the compound 4. [Synthesis of Compound 17] The compound 17 was synthesized in the same manner as the compound 11, except that the compound 16 was used in place of the compound 7. [Synthesis of Compound 18] The compound 18 was synthesized in the same manner as the compound 10, except that the compound 17 was used in place of the compound 4. [Synthesis of Compound 22] In a nitrogen stream, 22 ml of an aqueous solution containing 13.6 g of sodium hydroxide was slowly added dropwise to 2-bromo-7-iodo-fluorene (25.3 g, 68.19 mmol) manufactured by Tokyo Chemical Industry Co., Ltd., 1-bromohexane (33.8 g, 204.57 mmol) manufactured by Tokyo Chemical Industry Co., Ltd., dimethyl sulfoxide (560 ml) and tetrabutyl ammonium bromide (5.5 g), and the resulting mixture was allowed to react at 55° C. for 3 hours. This mixture was cooled to room temperature, and pure water (400 ml) was slowly added thereto, followed by 15-minute stirring, after which methylene chloride (400 ml) was further added, and the resultant was subjected to liquid separation. The thus formed aqueous layer was extracted with methylene chloride (200 ml×twice), and the extract was combined with an organic layer, dried over magnesium sulfate, and then concentrated. Thereafter, the resulting concentrate was purified by silica gel column chromatography (n-hexane/methylene chloride=850/150) to obtain the compound 22 (30.8 g) as a colorless solid. [Synthesis of Compound 23] In a nitrogen stream, the compound 22 (17.8 g, 33.0 mmol), 4-(9H-carbazol-9-yl)phenyl boronic acid (9.5 g, 33.0 mmol), potassium phosphate (21.0 g, 99.0 mmol), toluene (100 ml), ethanol (50 ml), and water (50 ml) were added to a flask, and this system was sufficiently purged with nitrogen and heated to 65° C. Bis(triphenylphosphine)palladium (II) dichloride (0.12 g, 0.17 mmol) was added thereto, and the resultant was stirred at 65° C. for 3 hours. Water was added to this reaction solution, which was subsequently extracted with toluene. The resulting organic layer was dried over anhydrous magnesium sulfate and then partially purified with activated earth. The thus obtained partial purification product was further purified by column chromatography (developer: hexane/methylene chloride=80/20), whereby the compound 23 (18.4 g, yield: 85.2%) was obtained. [Synthesis of Compound 24] In a nitrogen stream, 100 ml of dimethyl sulfoxide, the compound 23 (18.2 g, 27.8 mmol), bis(pinacolato)diboron (10.6 g, 41.7 mmol), and potassium acetate (8.2 g, 83.4 mmol) were added to a 300-ml flask and stirred at 60° C. for 30 minutes. Subsequently, 1,1′-bis(diphenylphosphino)ferrocene-palladium (II) dichloride-dichloromethane [PdCl2(dppf)CH2C2] (2.3 g, 2.78 mmol) was added, and the resulting mixture was allowed to react at 85° C. for 4.5 hours. This reaction solution was vacuum-filtered, and the resulting filtrate was extracted with toluene, dried over anhydrous magnesium sulfate, and then partially purified with activated earth. The thus obtained partial purification product was further purified by column chromatography (developer: hexane/ethyl acetate=90/10), whereby the compound 24 (17.7 g, yield: 90.7%) was obtained. [Synthesis of Compound 25] Subsequently, the compound 24 (5.3 g, 7.49 mmol), 3-bromo-9-(4-iodophenyl)-9H-carbazole (3.3 g, 7.34 mmol), potassium phosphate (4.2 g, 19.82 mmol), toluene (30 ml), ethanol (15 ml), and water (10 ml) were added to a flask, and this system was sufficiently purged with nitrogen and heated to 65° C. Bis(triphenylphosphine)palladium (II) dichloride (0.052 g, 0.073 mmol) was added thereto, and the resultant was stirred at 65° C. for 3 hours. Water was added to this reaction solution, which was subsequently extracted with toluene. The resulting organic layer was dried over anhydrous magnesium sulfate and then partially purified with activated earth. The thus obtained partial purification product was further purified by column chromatography (developer: hexane/methylene chloride=75/25), whereby the compound 25 (4.8 g, yield: 76.0%) was obtained. [Synthesis of Compound 27] Subsequently, the compound 25 (4.6 g, 5.13 mmol), the compound 26 (2.2 g, 6.67 mmol), potassium carbonate (2.1 g, 15.4 mmol), toluene (24 ml), ethanol (8 ml), and water (8 ml) were added to a flask, and this system was sufficiently purged with nitrogen and heated to 60° C. Tetrakis(triphenylphosphine)palladium (0) (0.18 g, 0.154 mmol) was added thereto, and the resultant was stirred at 85° C. for 3.5 hours. Water was added to this reaction solution, which was subsequently extracted with toluene. The resulting organic layer was dried over anhydrous magnesium sulfate and then partially purified with activated earth. The thus obtained partial purification product was further purified by column chromatography (developer: hexane/methylene chloride=60/40), whereby the compound 27 (3.9 g, yield: 749%) was obtained. [Synthesis of Compound 28] In a nitrogen stream, 40 ml of tetrahydrofuran, 40 ml of ethanol, the compound 27 (3.9 g, 3.84 mmol), and palladium/carbon (10%, about 55%-hydrated product, 0.29 g) were added to a 300-ml flask and stirred at 52° C. for 10 minutes. Subsequently, hydrazine monohydrate (1.3 g) was slowly added thereto dropwise, and the resulting mixture was allowed to react at this temperature for 5 hours. This reaction solution was vacuum-filtered with wet celite, and the resulting filtrate was concentrated and then purified by recrystallization with ethanol, whereby the compound 28 (3.3 g, yield: 87.2%) was obtained. [Synthesis of Compound 33] In a nitrogen stream, 200 ml of dimethyl sulfoxide, the compound 29 (15.5 g, 38.34 mmol), bis(pinacolato)diboron (24.3 g, 95.81 mmol), and potassium acetate (22.6 g, 230.0 mmol) were added to a 500-ml flask and stirred at 60° C. for 30 minutes. Subsequently, 1,1′-bis(diphenylphosphino)ferrocene-palladium (II) dichloride-dichloromethane [PdCl2(dppf)CH2Cl2] (3.1 g, 3.83 mmol) was added, and the resulting mixture was allowed to react at 85° C. for 3 hours. This reaction solution was vacuum-filtered, and the resulting filtrate was extracted with toluene, dried over anhydrous magnesium sulfate, and then partially purified with activated earth. The thus obtained partial purification product was further purified by column chromatography (developer: hexane/ethyl acetate=95/5), whereby the compound 30 (9.2 g, yield: 48%) was obtained. Subsequently, the compound 30 (6.1 g, 12.24 mmol), 1-bromo-4-iodobenzene (13.85 g, 48.96 mmol), potassium phosphate (15.6 g, 73.44 mmol), toluene (80 ml), ethanol (40 ml), and water (37 ml) were added to a flask, and this system was sufficiently purged with nitrogen and heated to 65° C. Bis(triphenylphosphine)palladium (II) dichloride (0.17 g, 0.25 mmol) was added thereto, and the resultant was stirred at 65° C. for 3 hours. Water was added to this reaction solution, which was subsequently extracted with toluene. The resulting organic layer was dried over anhydrous magnesium sulfate and then partially purified with activated earth. The thus obtained partial purification product was further purified by column chromatography (developer: hexane/methylene chloride=98/2), whereby the compound 31 (5.2 g, yield: 76.3%) was obtained. In a nitrogen stream, 100 ml of dimethyl sulfoxide, the compound 31 (5.2 g, 9.35 mmol), bis(pinacolato)diboron (7.1 g, 28.04 mmol), and potassium acetate (5.5 g, 56.1 mmol) were added to a 300-ml flask and stirred at 60° C. for 30 minutes. Subsequently, 1,1′-bis(diphenylphosphino)ferrocene-palladium (II) dichloride-dichloromethane [PdCl2(dppf)CH2Cl2] (0.77 g, 0.94 mmol) was added, and the resulting mixture was allowed to react at 85° C. for 3 hours. This reaction solution was vacuum-filtered, and the resulting filtrate was extracted with toluene, dried over anhydrous magnesium sulfate, and then partially purified with activated earth. The thus obtained partial purification product was further purified by column chromatography (developer: hexane/ethyl acetate=95/5), whereby the compound 32 (5.1 g, yield: 85%) was obtained. Subsequently, the compound 32 (5.1 g, 7.84 mmol), 2-iodo-5-bromotoluene (9.3 g, 31.36 mmol), potassium phosphate (10.0 g, 47.04 mmol), toluene (50 ml), ethanol (25 ml), and water (23 ml) were added to a flask, and this system was sufficiently purged with nitrogen and heated to 65° C. Bis(triphenylphosphine)palladium (II) dichloride (0.11 g, 0.16 mmol) was added thereto, and the resultant was stirred at 65° C. for 3 hours. Water was added to this reaction solution, which was subsequently extracted with toluene. The resulting organic layer was dried over anhydrous magnesium sulfate and then partially purified with activated earth. The thus obtained partial purification product was further purified by column chromatography (developer: hexane/methylene chloride=98/2), whereby the compound 33 (4.8 g, yield: 83.1%) was obtained. Example 1-1 [Synthesis of Polymer 1] A polymer 1 was synthesized in accordance with the following reaction scheme. The compound 7 (2.00 g, 3.0 mmol), 2-amino-9,9-dimethylfluorene (1.24 g, 6.00 mmol), tert-butoxy sodium (2.20 g, 22.9 mmol), and toluene (60 g) were added to a flask, and this system was sufficiently purged with nitrogen and heated to 60° C. (solution A). To 3.1 g of a toluene solution of a tris(dibenzylidene acetone)dipalladium complex (0.054 g, 0.059 mmol) that had been prepared in a separate flask, [4-(N,N-dimethylamino)phenyl]di-tert-butyl phosphine (0.13 g, 0.48 mmol) was added, and the resultant was heated to 60° C. (solution B). In a nitrogen stream, the solution B was added to the solution A, and they were allowed to react for 1.0 hour with heating to reflux. After confirming that the monomers had disappeared, the compound 5 (1.440 g, 2.71 mmol) was added. The resultant was heated to reflux for 1 hour, and bromobenzene (0.467 g, 2.97 mmol) was subsequently added thereto, followed by 2 hours of heating to reflux. This reaction solution was allowed to cool and, after an addition of 50 ml of toluene thereto, the reaction solution was added dropwise to an ethanol/water (200 ml/40 ml) solution to obtain a crude polymer. This crude polymer was dissolved in toluene and reprecipitated with acetone, and the thus precipitated polymer was dissolved again in toluene, followed by washing with diluted hydrochloric acid and reprecipitation with ammonia-containing ethanol. The resulting polymer was recovered by filtration and then purified by column chromatography to obtain the polymer 1 (1.1 g). The thus obtained polymer 1 had the following molecular weight and degree of dispersion.Weight-average molecular weight (Mw)=55,540Number-average molecular weight (Mn)=38,040Degree of dispersion (Mw/Mn)=1.46 Example 1-2 [Synthesis of Polymer 3] A polymer 3 was synthesized in the same manner as the polymer 1 in accordance with the following reaction scheme. Weight-average molecular weight (Mw)=41,900Number-average molecular weight (Mn)=31,500Degree of dispersion (Mw/Mn)=1.33 Example 1-3 [Synthesis of Polymer 4] A polymer 4 was synthesized in the same manner as the polymer 1 in accordance with the following reaction scheme. Weight-average molecular weight (Mw)=41,300Number-average molecular weight (Mn)=28,650Degree of dispersion (Mw/Mn)=1.44 Example 1-4 [Synthesis of Polymer 5] A polymer 5 was synthesized in the same manner as the polymer 1 in accordance with the following reaction scheme. Weight-average molecular weight (Mw)=38,380Number-average molecular weight (Mn)=26,840Degree of dispersion (Mw/Mn)=1.43 Example 1-5 [Synthesis of Polymer 6] A polymer 6 was synthesized in the same manner as the polymer 1 in accordance with the following reaction scheme. Weight-average molecular weight (Mw)=74,160Number-average molecular weight (Mn)=50,100Degree of dispersion (Mw/Mn)=1.48 Comparative Example 1-1 [Synthesis of Polymer 10] A polymer 10 for comparison was synthesized in the same manner as the polymer 1 in accordance with the following reaction scheme. Weight-average molecular weight (Mw)=51,300Number-average molecular weight (Mn)=35,380(Mw/Mn)=1.45 Comparative Example 1-2 [Synthesis of Polymer 11] A polymer 11 for comparison was synthesized in the same manner as the polymer 1 in accordance with the following reaction scheme. Weight-average molecular weight (Mw)=39,840Number-average molecular weight (Mn)=30,180(Mw/Mn)=1.32 Comparative Example 1-3 [Synthesis of Polymer 12] A polymer 12 for comparison was synthesized in the same manner as the polymer 1 in accordance with the following reaction scheme. Example 1-6 [Synthesis of Polymer 7] The compound 5 (1.5 g, 2.8 mmol), 2-amino-9,9-dihexylfluorene (0.59 g, 1.7 mmol), 2-amino-9,9-dimethylfluorene (0.59 g, 2.8 mmol), the compound 28 (1.11 g, 1.1 mmol), tert-butoxy sodium (2.09 g, 21.7 mmol), and toluene (24 g, 27.7 ml) were added, and the system was sufficiently purged with nitrogen and heated to 60° C. (solution A1). To 3.3 ml of a toluene solution of a tris(dibenzylidene acetone)dipalladium complex (0.052 g, 0.06 mmol), [4-(N,N-dimethylamino)phenyl]di-tert-butyl phosphine (Amphos) (0.12 g, 0.5 mmol) was added, and the resultant was heated to 60° C. (solution B1). In a nitrogen stream, the solution B1 was added to the solution A1, and they were allowed to react for 1.0 hour with heating to reflux. After confirming that the compound 5 had disappeared, the compound 10 (1.30 g, 2.6 mmol) was added. The resultant was heated to reflux for 2 hours, and bromobenzene (0.44 g, 2.8 mmol) was subsequently added thereto, followed by 2 hours of reaction with heating to reflux. This reaction solution was allowed to cool and, after an addition of 40 ml of toluene thereto, the reaction solution was added dropwise to an ethanol/water (500 ml/90 ml) solution to obtain an end-capped crude polymer. This end-capped crude polymer was dissolved in toluene and reprecipitated in acetone, and the thus precipitated polymer was recovered by filtration. The thus obtained polymer was dissolved in toluene, washed with diluted hydrochloric acid, and reprecipitated with ammonia-containing ethanol. The resulting polymer was recovered by filtration and then purified by column chromatography to obtain a polymer 7 of interest (1.7 g). The molecular weight and the like of the thus obtained polymer 7 were as follows.Weight-average molecular weight (Mw)=40,000Number-average molecular weight (Mn)=29,600Degree of dispersion (Mw/Mn)=1.35 Example 1-7 [Synthesis of Polymer 8] The compound 33 (1.35 g, 1.8 mmol), 2-amino-9,9-dimethylfluorene (0.767 g, 3.7 mmol), tert-butoxy sodium (1.36 g, 14.1 mmol), and toluene (41 ml) were added, and the system was sufficiently purged with nitrogen and heated to 60° C. (solution A). To 5 ml of a toluene solution of a tris(dibenzylidene acetone)dipalladium complex (0.034 g, 0.04 mmol), [4-(N,N-dimethylamino)phenyl]di-tert-butyl phosphine (Amphos) (0.078 g, 0.30 mmol) was added, and the resultant was heated to 60° C. (solution B). In a nitrogen stream, the solution B was added to the solution A, and they were allowed to react for 1.0 hour with heating to reflux. After confirming that the compound 33 had disappeared, the compound 10 (0.892 g, 1.77 mmol) was added. The resultant was heated to reflux for 2 hours, and bromobenzene (0.2 g, 1.3 mmol) was subsequently added thereto, followed by 2 hours of reaction with heating to reflux. This reaction solution was allowed to cool and, after an addition of 40 ml of toluene thereto, the reaction solution was added dropwise to an ethanol/water (500 ml/90 ml) solution to obtain an end-capped crude polymer. This end-capped crude polymer was dissolved in toluene and reprecipitated in acetone, and the thus precipitated polymer was recovered by filtration. The thus obtained polymer was dissolved in toluene, washed with diluted hydrochloric acid, and reprecipitated with ammonia-containing ethanol. The resulting polymer was recovered by filtration and then purified by column chromatography to obtain a polymer 8 of interest (0.8 g). The molecular weight and the like of the thus obtained polymer 8 were as follows.Weight-average molecular weight (Mw)=61,500Number-average molecular weight (Mn)=48,000Degree of dispersion (Mw/Mn)=1.28 Example 1-8 [Synthesis of Polymer 9] The compound 33 (0.9 g, 1.2 mmol), the compound 34 (0.81 g, 2.4 mmol), tert-butoxy sodium (0.91 g, 9.4 mmol), and toluene (27 ml) were added, and this system was sufficiently purged with nitrogen and heated to 60° C. (solution A). To 5 ml of a toluene solution of a tris(dibenzylidene acetone)dipalladium complex (0.022 g, 0.02 mmol), [4-(N,N-dimethylamino)phenyl]di-tert-butyl phosphine (Amphos) (0.052 g, 0.20 mmol) was added, and the resultant was heated to 60° C. (solution B). In a nitrogen stream, the solution B was added to the solution A, and they were allowed to react for 1.0 hour with heating to reflux. After confirming that the compound 33 had disappeared, the compound 10 (0.558 g, 1.1 mmol) was added. The resultant was heated to reflux for 2 hours, and bromobenzene (0.36 g, 2.3 mmol) was subsequently added thereto, followed by 2 hours of reaction with heating to reflux. This reaction solution was allowed to cool and, after an addition of 26 ml of toluene thereto, the reaction solution was added dropwise to an ethanol/water (400 ml/90 ml) solution to obtain an end-capped crude polymer. This end-capped crude polymer was dissolved in toluene and reprecipitated in acetone, and the thus precipitated polymer was recovered by filtration. The thus obtained polymer was dissolved in toluene, washed with diluted hydrochloric acid, and reprecipitated with ammonia-containing ethanol. The resulting polymer was recovered by filtration and then purified by column chromatography to obtain a polymer 9 of interest (0.3 g). The molecular weight and the like of the thus obtained polymer 9 were as follows.Weight-average molecular weight (Mw)=81,300Number-average molecular weight (Mn)=63,000Degree of dispersion (Mw/Mn)=1.29 Example 1-9 (Synthesis of Polymer 13) The compound 33 (1.2 g, 1.6 mmol), the compound 35 (0.179 g, 0.5 mmol), 2-amino-9,9-dimethylfluorene (0.447 g, 2.1 mmol), the compound 28 (0.641 g, 0.7 mmol), tert-butoxy sodium (1.21 g, 12.6 mmol), and toluene (21.6 g, 25 ml) were added, and the system was sufficiently purged with nitrogen and heated to 60° C. (solution A1). To 5.0 ml of a toluene solution of a tris(dibenzylidene acetone)dipalladium complex (0.0298 g, 0.03 mmol), [4-(N,N-dimethylamino)phenyl]di-tert-butyl phosphine (Amphos) (0.069 g, 0.3 mmol) was added, and the resultant was heated to 60° C. (solution B1). In a nitrogen stream, the solution B1 was added to the solution A1, and they were allowed to react for 1.0 hour with heating to reflux. After confirming that the compound 33 had disappeared, the compound 33 (0.954 g, 1.29 mmol) was added. The resultant was heated to reflux for 2 hours, and bromobenzene (0.26 g, 1.7 mmol) was subsequently added thereto, followed by 2 hours of reaction with heating to reflux. This reaction solution was allowed to cool and, after an addition of 41 ml of toluene thereto, the reaction solution was added dropwise to an ethanol/water (235 ml/30 ml) solution to obtain an end-capped crude polymer. This end-capped crude polymer was dissolved in toluene and reprecipitated in acetone, and the thus precipitated polymer was recovered by filtration. The thus obtained polymer was dissolved in toluene, washed with diluted hydrochloric acid, and reprecipitated with ammonia-containing ethanol. The resulting polymer was recovered by filtration and then purified by column chromatography to obtain a polymer 13 of interest (1.7 g). The molecular weight and the like of the thus obtained polymer 13 were as follows.Weight-average molecular weight (Mw)=42,300Number-average molecular weight (Mn)=29,375Degree of dispersion (Mw/Mn)=1.44 Example 1-10 (Synthesis of Polymer 14) The compound 33 (1.4 g, 1.9 mmol), the compound 35 (0.183 g, 0.5 mmol), 2-amino-9,9-dimethylfluorene (0.535 g, 2.6 mmol), the compound 28 (0.748 g, 0.8 mmol), tert-butoxy sodium (1.41 g, 14.7 mmol), and toluene (25.2 g, 29 ml) were added, and the system was sufficiently purged with nitrogen and heated to 60° C. (solution A1). To 6.0 ml of a toluene solution of a tris(dibenzylidene acetone)dipalladium complex (0.0348 g, 0.04 mmol), [4-(N,N-dimethylamino)phenyl]di-tert-butyl phosphine (Amphos) (0.081 g, 0.3 mmol) was added, and the resultant was heated to 60° C. (solution B1). In a nitrogen stream, the solution B1 was added to the solution A1, and they were allowed to react for 1.0 hour with heating to reflux. After confirming that the compound 33 had disappeared, the compound 33 (1.21 g, 1.6 mmol) was added. The resultant was heated to reflux for 2 hours, and bromobenzene (0.21 g, 1.3 mmol) was subsequently added thereto, followed by 2 hours of reaction with heating to reflux. This reaction solution was allowed to cool and, after an addition of 80 ml of toluene thereto, the reaction solution was added dropwise to an ethanol/water (380 ml/35 ml) solution to obtain an end-capped crude polymer. This end-capped crude polymer was dissolved in toluene and reprecipitated in acetone, and the thus precipitated polymer was recovered by filtration. The thus obtained polymer was dissolved in toluene, washed with diluted hydrochloric acid, and reprecipitated with ammonia-containing ethanol. The resulting polymer was recovered by filtration and then purified by column chromatography to obtain a polymer 14 of interest (1.4 g). The molecular weight and the like of the thus obtained polymer 14 were as follows.Weight-average molecular weight (Mw)=37,500Number-average molecular weight (Mn)=28,625Degree of dispersion (Mw/Mn)=1.31 [Measurement of Excited Singlet Energy Level (S1) and Excited Triplet Energy Level (T1) of Polymers] Each polymer was dissolved in 2-methyltetrahydrofuran to prepare a 1%-by-mass solution. For this solution sample, the fluorescence emission spectrum and the phosphorescence emission spectrum were measured using a fluorescence spectrophotometer (F-4500, manufactured by Hitachi, Ltd.) at an excitation wavelength of 350 nm under a liquid nitrogen cooling condition. On the thus obtained fluorescence emission spectrum and phosphorescence emission spectrum, the S1level and the T1level were determined from the peak-top wavelength of an emission peak closest to the short-wavelength side. The measurement results are shown in Table 1. TABLE 1S1 levelT1 level(nm)(nm)Polymer 1418517Polymer 3411517Polymer 4416524Polymer 5415519Polymer 6428534Polymer 10437563Polymer 11436564Polymer 12442562 It was demonstrated that, as compared to the polymers of Comparative Examples 1-1 to 1-3, the polymers of Examples 1-1 to 1-6 had higher S1and T1energy levels and were less likely to cause quenching in an organic electroluminescent element due to energy transfer from a light-emitting exciton to each polymer. [Insolubilization Experiment] Using the polymers of Examples, insolubilization experiments in cyclohexylbenzene and butyl benzoate were conducted. The polymers 1, 3 to 7, 8 and 9 were each dissolved in anisole to prepare coating compositions. These coating compositions were each spin-coated on a glass slide substrate to form a film having a thickness of 110 nm to 130 nm. The thus formed film was subsequently heat-treated at 230° C. for 30 minutes. Then, the thickness of each film was measured at room temperature. Further, each film was rinsed with cyclohexyl benzene or butyl benzoate. This rinsing treatment was performed by dropping 130 μl of the solvent onto the coating film, leaving the film to stand for 90 seconds, and then spinning the substrate. After heat-treating the whole glass slide substrate having the thus rinsed film, the thickness of the film remaining on the glass slide substrate was measured. The film thickness ratio before and after the rinsing treatment (insolubilization rate) is shown in Table 2. TABLE 2Insolubilization rate (%)CyclohexylbenzeneButyl benzoatePolymer 1>95%>95%Polymer 3>95%>95%Polymer 4>95%>95%Polymer 5>95%>95%Polymer 6>95%>95%Polymer 7100%Polymer 8>95%>95%Polymer 9>95%>95% As shown in Table 2, it was demonstrated that the organic films of the polymers 1, 3 to 7, 8 and 9 did not dissolved in cyclohexylbenzene and butyl benzoate after being heat-treated and, therefore, can be formed by a wet process. <Solubility Test> For the polymer 8 synthesized above, the solubility in toluene was tested at room temperature (25° C.). As a result, the polymer 8 was found to have a solubility of not less than 5% by mass in toluene at room temperature (25° C.). Example 2-1 An organic electroluminescent element having the configuration illustrated in the FIGURE was produced in the following manner. On a glass substrate1on which a transparent conductive film of indium-tin oxide (ITO) had been deposited at a thickness of 70 nm (sputtered film article, manufactured by Sanyo Vacuum Industries Co., Ltd.), 2 mm-wide stripes were patterned by a combination of an ordinary photolithography technique and hydrochloric acid etching to form an anode2, whereby an ITO substrate was obtained. This pattern-formed ITO substrate was sequentially subjected to ultrasonic washing with an aqueous surfactant solution, washing with ultrapure water, ultrasonic washing with ultrapure water, and then washing with ultrapure water, after which the ITO substrate was dried with compressed air and cleaned with UV/ozone at last. First, 100 parts by mass of a charge transporting polymer compound having the following structural formula (P-1) and 10 parts by mass of an electron-accepting compound having the following structure (A1) were weighed and dissolved in butyl benzoate to prepare a 3.0%-by-weight solution. This solution was spin-coated onto the above-described substrate in the atmosphere, and the resultant was dried in a 240° C. clean oven in the atmosphere for 60 minutes to form a 60 nm-thick uniform thin film as a hole injection layer3. Next, 100 parts by mass of a charge transporting polymer compound containing the polymer 8 was dissolved in cyclohexylbenzene to prepare a 2.5%-by-weight solution. In a nitrogen glove box, this solution was spin-coated onto the hole injection layer that had been formed on the substrate, and the resultant was dried on a 230° C. hot plate for 60 minutes in the nitrogen glove box to form a 20 nm-thick uniform thin film as a hole transport layer4. Subsequently, for the formation of a light-emitting layer5, 65 parts by mass of a compound (RH-1) represented by the following structural formula, 35 parts by mass of a compound (RH-2) represented by the following structural formula, and 20 parts by mass of a compound (RD-1) represented by the following structural formula were weighed and dissolved in cyclohexylbenzene to prepare a 7.2%-by-weight solution. In a nitrogen glove box, this solution was spin-coated onto the hole transport layer that had been formed on the substrate, and the resultant was dried on a 130° C. hot plate for 20 minutes in the nitrogen glove box to form a 80 nm-thick uniform thin film as the light-emitting layer5. The substrate on which up to the light-emitting layer5had been thus formed was transferred into a vacuum vapor deposition apparatus, and the inside of this apparatus was evacuated to a degree of vacuum of 1.3×10−4Pa or lower, after which 40 parts by mass of a compound (ET-1) represented by the following structural formula and 60 parts by mass of a compound (liq) represented by the following structural formula were vapor-deposited on the light-emitting layer5by a co-vapor deposition method to form an electron transport layer6. During this vapor deposition, the degree of vacuum was controlled at 1.3×10−4Pa and the vapor deposition rate was controlled in a range of 1.6 to 1.8 Å/sec, and the thus obtained electron transport layer6had a thickness of 30 nm. At this point, the substrate on which up to the vapor deposition of the electron transport layer6had been completed was taken out and set in another vapor deposition apparatus. As a mask for cathode vapor deposition, a striped shadow mask having 2 mm-wide stripes was tightly attached to the substrate in such a manner that the stripes were arranged perpendicular to the ITO stripes of the anode2, and the inside of the apparatus was evacuated to a degree of vacuum of 2.3×10−4Pa or lower. Next, as a cathode7, aluminum was heated in a molybdenum boat, and an 80 nm-thick aluminum layer was formed in the same manner while controlling the vapor deposition rate in a range of 1.0 to 4.9 Å/sec. During this vapor deposition, the degree of vacuum was 2.6×10−4Pa. Subsequently, in order to prevent deterioration of the resulting organic electroluminescent element by the moisture and the like in the atmosphere during storage, a sealing treatment was performed by the following method. In a nitrogen glove box, a photocurable resin 30Y-437 (manufactured by ThreeBond Holdings Co., Ltd.) was applied to the periphery of a 23 mm×23 mm glass plate at a width of about 1 mm, and a moisture getter sheet (manufactured by Dynic Corporation) was placed on the center of the glass plate. The substrate on which the cathode formation had been completed was pasted thereon such that the vapor-deposited surface faced the desiccant sheet. Thereafter, UV light was irradiated only to the region coated with the photocurable resin so as to cure the resin. In the above-described manner, an organic electroluminescent element having a light-emitting area of 2 mm×2 mm in size was produced. Comparative Example 2-1 An organic electroluminescent element illustrated inFIG.1was produced in the same manner as in Example 2-1, except that a comparative polymer 1 represented by the following P-2 was used in place of the polymer 8. <Evaluation of Current-Voltage Characteristics of Organic Electroluminescent Elements> Table 3 shows the results of evaluating the voltage characteristics and the working life for the organic electroluminescent elements produced in Example 2-1 and Comparative Example 2-1. The voltage was measured when each organic electroluminescent element was illuminated at a brightness of 1,000 cd/m2and, using the voltage of the element of Comparative Example 2-1 as a reference, the difference between the voltage of the element of Example 2-1 and the voltage of the element of Comparative Example 2-1 was determined as relative voltage [V]. As for the working life, each element was driven at a constant current of 50 mA/cm2, and the 5% decay life (LT95, hr) was measured based on an initial brightness of 3,000 cd/m2, and the relative value thereof (hereinafter, referred to as “relative life”) was determined, taking the LT95 (hr) of Comparative Example 2-1 as 1. TABLE 3Hole transportRelativeLT95 relativelayervoltage (V)lifeComparativeP-20.01Example 2-1Example 2-1Polymer 8−0.3>34 As shown in Table 3, it is seen that the organic electroluminescent element produced using the polymer of the present invention had a low driving voltage and an extended working life. Example 2-2 In the production of an electroluminescent element, the processes up to the formation of the charge transport layer was performed in the same manner as in Example 2-1, except that the polymer 8 was changed to the polymer 7. Subsequently, for the formation of a light-emitting layer5, 55 parts by mass of the compound (RH-1), 45 parts by mass of the compound (RH-2), and 20 parts by mass of the compound (RD-1) were weighed and dissolved in cyclohexylbenzene to prepare a 7.2%-by-weight solution. In a nitrogen glove box, this solution was spin-coated onto the hole transport layer that had been formed on the substrate, and the resultant was dried on a 130° C. hot plate for 20 minutes in the nitrogen glove box to form a 80 nm-thick uniform thin film as the light-emitting layer5. Thereafter, an organic electroluminescent element was produced in the same manner as in Example 2-1. Comparative Example 2-2 An electroluminescent element was produced in the same manner as in Example 2-2, except that the polymer 1 was changed to the polymer P-3. The external quantum efficiency and the working life were evaluated for the organic electroluminescent elements obtained in Example 2-2 and Comparative Example 2-2. In this process, Comparative Example 2-2 was used as a reference. The voltage was measured when each organic electroluminescent element was illuminated at a brightness of 1,000 cd/m2and, using the voltage of the element of Comparative Example 2-2 as a reference, the difference between the voltage of the element of Example 2-2 and the voltage of the element of Comparative Example 2-2 was determined as relative voltage [V]. As for the external quantum efficiency, the value was measured when each organic electroluminescent element was illuminated at a brightness of 1,000 cd/m2, and the ratio thereof was determined as a relative value, taking the external quantum efficiency of Comparative Example 2-2 as 1. As for the working life, each element was driven at a constant current of 40 mA/cm2, and the 5% decay life (LT95, hr) was measured based on an initial brightness of 1,000 cd/m2, and the relative value thereof (hereinafter, referred to as “relative life”) was determined, taking the LT95 (hr) of Comparative Example 2-2 as 1. The results thereof are shown in Table 4. TABLE 4ExternalHoleRelativequantumLT95transportvoltageefficiencyrelativelayer(V)(relative value)lifeComparativeP-30.01.001.00Example 2-2Example 2-2Polymer 7−0.61.08>1.25 As shown in Table 4, it is seen that the organic electroluminescent element produced using the polymer of the present invention had a low driving voltage, a high external quantum efficiency, and an extended working life. Example 2-3 In the production of an organic electroluminescent element, the processes up to the formation of the hole transport layer4was performed in the same manner as in Example 2-2. Subsequently, 100 parts by mass of a compound (H-1) represented by the following structural formula and 10 parts by mass of a compound (BD-1) represented by the following structural formula were weighed and dissolved in cyclohexylbenzene to prepare a 3.9%-by-weight solution. In a nitrogen glove box, this solution was spin-coated onto the hole transport layer that had been formed on the substrate, and the resultant was dried on a 130° C. hot plate for 20 minutes in the nitrogen glove box to form a 40 nm-thick uniform thin film as a light-emitting layer5. Thereafter, an electroluminescent element was produced in the same manner as in Example 2-1. Example 2-4 An electroluminescent element was produced in the same manner as in Examples 2-3, except that the polymer 1 was changed to the polymer 7. Comparative Example 2-3 An electroluminescent element was produced in the same manner as in Examples 2-3, except that the polymer 1 was changed to the polymer P-3. For the organic electroluminescent elements obtained in Examples 2-3 and 2-4 and Comparative Example 2-3, the voltage and the external quantum efficiency were evaluated in the same manner as in Example 2-1 and Comparative Example 2-1. In this process, Comparative Example 2-3 was used as a reference. As for the working life, each element was driven at a constant current of 15 mA/cm2, and the 5% decay life (LT95, hr) was measured based on an initial brightness of 1,000 cd/m2, and the relative value thereof (hereinafter, referred to as “relative life”) was determined, taking the LT95 (hr) of Comparative Example 2-3 as 1. The results thereof are shown in Table 5. TABLE 5ExternalquantumHoleRelativeefficiencyLT95transportvoltage(relativerelativelayer(V)value)lifeComparativeP-30.01.001.0Example 2-3Example 2-3Polymer 10.03.554.5Example 2-4Polymer 7−0.22.737.5 As shown in Table 5, it is seen that the organic electroluminescent elements produced using the polymer of the present invention tended to have a low voltage and exhibited a high external quantum efficiency and an extended working life. Example 3-1 Using a composition composed of the polymer of the present invention and a solvent, a film was formed by the following method. A glass substrate was sequentially subjected to ultrasonic washing with an aqueous surfactant solution, washing with ultrapure water, ultrasonic washing with ultrapure water, and then washing with ultrapure water, after which the glass substrate was dried and cleaned with UV/ozone at last. A polymer compound having the structure of the polymer 1 was dissolved in anisole to prepare a 3.75%-by-weight solution. This solution was spin-coated onto the glass substrate in a glove box under the atmosphere, and the resultant was dried on a 230° C. hot plate for 30 minutes in a clean booth to form a film. [Evaluation of Film Insolubilization] The thickness of the thus obtained film was measured using a stylus-type profiler manufactured by KLA-Tencor Technologies Corporation. Subsequently, 130 μl of cyclohexylbenzene (CHB) was applied dropwise onto the film and left to stand for 90 seconds, after which the substrate was spun using a spin coater to remove CHB. Thereafter, the substrate was dried on a 130° C. for 20 minutes. The thickness was measured again for the CHB-applied part of the thus treated thin film. The film thickness prior to the application of CHB and the film thickness after the CHB treatment were defined as T1 and T2, respectively, and the insolubilization rate was calculated by the following equation: T2/T1×100=(insolubilization rate) The insolubilization rate of the film is shown in Table 6. Example 3-2 A polymer compound having the structure of the polymer 8 was dissolved in anisole to prepare a 3.75%-by-weight solution and, after forming a film in the same manner as in Example 3-1, the insolubilization rate was determined. The insolubilization rate of the thus obtained film is shown in Table 6. Comparative Example 3-1 A polymer compound having the structure represented by the following Formula P-4 was dissolved in anisole to prepare a 3.75%-by-weight solution and, after forming a film in the same manner as in Example 3-1, the insolubilization rate was determined. The insolubilization rate of the thus obtained film is shown in Table 6. Example 3-3 A polymer compound having the structure of the polymer 1 and a polymer compound having the structure of Formula (P-4) were weighed in an amount of 75 parts by weight and 25 parts by weight, respectively (polymer 1: (P-4)=75:25), and these polymer compounds were dissolved in anisole to prepare a 3.75%-by-weight solution, after which a film was formed in the same manner as in Example 3-1, and the insolubilization rate was determined. The insolubilization rate of the thus obtained film is shown in Table 6. Example 3-4 A solution was prepared and a film was formed in the same manner as in Example 3-3, except that the polymer 1 was changed to the polymer 8, after which the insolubilization rate was determined. The insolubilization rate of the thus obtained film is shown in Table 6. As shown in Table 6, it is seen that the thin films formed from the polymer of the present invention were insolubilized in the solvent even when the polymer of the present invention did not have a crosslinkable group. Further, even a polymer that had no crosslinkable group and thus would not yield an insolubilized thin film by itself was insolubilized when mixed with the polymer of the present invention that had no crosslinkable group. This is useful for expanding the range of compounds that can be used in the production of an organic electroluminescent element by a wet process. TABLE 6Insolubilizationrate [%]Comparative86Example 3-1Example 3-1100Example 3-2100Example 3-3100Example 3-499 INDUSTRIAL APPLICABILITY The present invention can be preferably applied to various fields where an organic electroluminescent element is used, such as flat panel displays (e.g., flat panel displays for OA computers and wall-mounted televisions), light sources utilizing the features of a planar light emitter (e.g., light sources of copying machines, and backlight sources of liquid-crystal displays and instruments), sign boards, and marker lamps. REFERENCE SIGNS LIST 1: substrate2: anode3: hole injection layer4: hole transport layer5: light-emitting layer6: electron transport layer7: cathode8: organic electroluminescent element | 206,561 |
11943998 | DETAILED DESCRIPTION OF THE EMBODIMENTS Reference will now be made in detail to some of the examples and preferred embodiments, which are illustrated in the accompanying drawings. The present disclosure relates to an OLED, in which a delayed fluorescent material and a fluorescent material are applied in a single emitting material layer or adjacent emitting material layers, and an organic light emitting device including the OLED. For example, the organic light emitting device can be an organic light emitting display device or an organic lighting device. As an example, an organic light emitting display device, which is a display device including one or more OLEDs of the present disclosure, will be mainly described. FIG.1is a schematic circuit diagram of an organic light emitting display device of the present disclosure. All the components of the organic light emitting display device according to all embodiments of the present disclosure are operatively coupled and configured. As shown inFIG.1, an organic light emitting display device includes a gate line GL, a data line DL, a power line PL, a switching thin film transistor TFT Ts, a driving TFT Td, a storage capacitor Cst, and an OLED D. The gate line GL and the data line DL cross each other to define a pixel region P. The pixel region can include a red pixel region, a green pixel region and a blue pixel region. Although a pixel region is exemplified, the organic light emitting display device can include a plurality of such pixel regions having a plurality of gate lines, data lines, TFTs, OLEDs, etc. The switching TFT Ts is connected to the gate line GL and the data line DL, and the driving TFT Td and the storage capacitor Cst are connected to the switching TFT Ts and the power line PL. The OLED D is connected to the driving TFT Td. In the organic light emitting display device, when the switching TFT Ts is turned on by a gate signal applied through the gate line GL, a data signal from the data line DL is applied to the gate electrode of the driving TFT Td and an electrode of the storage capacitor Cst. When the driving TFT Td is turned on by the data signal, an electric current is supplied to the OLED D from the power line PL. As a result, the OLED D emits light. In this case, when the driving TFT Td is turned on, a level of an electric current applied from the power line PL to the OLED D is determined such that the OLED D can produce a gray scale. The storage capacitor Cst serves to maintain the voltage of the gate electrode of the driving TFT Td when the switching TFT Ts is turned off. Accordingly, even if the switching TFT Ts is turned off, a level of an electric current applied from the power line PL to the OLED D is maintained to next frame. As a result, the organic light emitting display device displays a desired image. FIG.2is a schematic cross-sectional view of an organic light emitting display device according to a first embodiment of the present disclosure. As shown inFIG.2, an organic light emitting display device100includes a substrate110, a TFT Tr and an OLED D connected to the TFT Tr. The substrate110can be a glass substrate or a plastic substrate. For example, the substrate110can be a polyimide substrate. A buffer layer122is formed on the substrate, and the TFT Tr is formed on the buffer layer122. The buffer layer122can be omitted. A semiconductor layer120is formed on the buffer layer122. The semiconductor layer120can include an oxide semiconductor material or polycrystalline silicon. When the semiconductor layer120includes the oxide semiconductor material, a light-shielding pattern can be formed under the semiconductor layer120. The light to the semiconductor layer120is shielded or blocked by the light-shielding pattern such that thermal degradation of the semiconductor layer120can be prevented. On the other hand, when the semiconductor layer120includes polycrystalline silicon, impurities can be doped into both sides of the semiconductor layer120. A gate insulating layer124is formed on the semiconductor layer120. The gate insulating layer124can be formed of an inorganic insulating material such as silicon oxide or silicon nitride. A gate electrode130, which is formed of a conductive material, e.g., metal, is formed on the gate insulating layer124to correspond to a center of the semiconductor layer120. InFIG.2, the gate insulating layer124is formed on an entire surface of the substrate110. Alternatively, the gate insulating layer124can be patterned to have the same shape as the gate electrode130. An interlayer insulating layer132, which is formed of an insulating material, is formed on the gate electrode130. The interlayer insulating layer132can be formed of an inorganic insulating material, e.g., silicon oxide or silicon nitride, or an organic insulating material, e.g., benzocyclobutene or photo-acryl. The interlayer insulating layer132includes first and second contact holes134and136exposing both sides of the semiconductor layer120. The first and second contact holes134and136are positioned at both sides of the gate electrode130to be spaced apart from the gate electrode130. InFIG.2, the first and second contact holes134and136are formed through the interlayer insulating layer132and the gate insulating layer124. Alternatively, when the gate insulating layer124is patterned to have the same shape as the gate electrode130, the first and second contact holes134and136is formed only through the interlayer insulating layer132. A source electrode144and a drain electrode146, which are formed of a conductive material, e.g., metal, are formed on the interlayer insulating layer132. The source electrode144and the drain electrode146are spaced apart from each other with respect to the gate electrode130and respectively contact both sides of the semiconductor layer120through the first and second contact holes134and136. The semiconductor layer120, the gate electrode130, the source electrode144and the drain electrode146constitute the TFT Tr. The TFT Tr serves as a driving element. Namely, the TFT Tr is the driving TFT Td (ofFIG.1). In the TFT Tr, the gate electrode130, the source electrode144, and the drain electrode146are positioned over the semiconductor layer120. Namely, the TFT Tr has a coplanar structure. Alternatively, in the TFT Tr, the gate electrode can be positioned under the semiconductor layer, and the source and drain electrodes can be positioned over the semiconductor layer such that the TFT Tr can have an inverted staggered structure. In this instance, the semiconductor layer can include amorphous silicon. The gate line and the data line cross each other to define the pixel region, and the switching TFT is formed to be connected to the gate and data lines. The switching TFT is connected to the TFT Tr as the driving element. In addition, the power line, which can be formed to be parallel to and spaced apart from one of the gate and data lines, and the storage capacitor for maintaining the voltage of the gate electrode of the TFT Tr in one frame can be further formed. A planarization layer150is formed on an entire surface of the substrate110to cover the source and drain electrodes144and146. The planarization layer150provides a flat top surface and has a drain contact hole152exposing the drain electrode146of the TFT Tr. The OLED D is disposed on the planarization layer150and includes a first electrode210, which is connected to the drain electrode146of the TFT Tr, a light emitting layer220and a second electrode230. The light emitting layer220and the second electrode230are sequentially stacked on the first electrode210. The OLED D is positioned in each of the red, green and blue pixel regions and respectively emits the red, green and blue light. The first electrode210is separately formed in each pixel region. The first electrode210can be an anode and can be formed of a conductive material, e.g., a transparent conductive oxide (TCO), having a relatively high work function. For example, the first electrode210can be formed of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-tin-zinc-oxide (ITZO), tin oxide (SnO), zinc oxide (ZnO), indium-copper-oxide (ICO) or aluminum-zinc-oxide (Al:ZnO, AZO). When the organic light emitting display device100is operated in a bottom-emission type, the first electrode210may have a single-layered structure of the transparent conductive material layer. When the organic light emitting display device100of the present disclosure is operated in a top-emission type, a reflection electrode or a reflection layer can be formed under the first electrode210. For example, the reflection electrode or the reflection layer can be formed of silver (Ag) or aluminum-palladium-copper (APC) alloy. In this instance, the first electrode210may have a triple-layered structure of ITO/Ag/ITO or ITO/APC/ITO. In addition, a bank layer160is formed on the planarization layer150to cover an edge of the first electrode210. Namely, the bank layer160is positioned at a boundary of the pixel region and exposes a center of the first electrode210in the pixel region. The light emitting layer220as an emitting unit is formed on the first electrode210. The light emitting layer220can have a single-layered structure of an emitting material layer (EML) including an emitting material. To increase an emitting efficiency of the organic light emitting display device, the light emitting layer220can have a multi-layered structure. For example, the light emitting layer220can further include a hole injection layer (HIL), a hole transporting layer (HTL), an electron blocking layer (EBL), a hole blocking layer (HBL), an electron transporting layer (ETL) and an electron injection layer (EIL). The HIL, the HTL and the EBL are sequentially disposed between the first electrode (210) and the EML, and the HBL, the ETL and the EIL are sequentially disposed between the EML and the second electrode230. In addition, the EML can has a single-layered structure or a multi-layered structure. Moreover, two or more light emitting layers can be disposed to be spaced apart from each other such that the OLED D can have a tandem structure. The second electrode230is formed over the substrate110where the light emitting layer220is formed. The second electrode230covers an entire surface of the display area and can be formed of a conductive material having a relatively low work function to serve as a cathode. For example, the second electrode230can be formed of aluminum (Al), magnesium (Mg), calcium (Ca), silver (Ag) or their alloy or combination. In the top-emission type organic light emitting display device100, the second electrode230may have a thin profile (small thickness) to provide a light transmittance property (or a semi-transmittance property). Further, the organic light emitting display device100can include a color filter corresponding to the red, green and blue pixel regions. For example, when the OLED D, which has the tandem structure and emits the white light, is formed to all of the red, green and blue pixel regions, a red color filter pattern, a green color filter pattern and a blue color filter pattern can be formed in the red, green and blue pixel regions, respectively, such that a full-color display is provided. When the organic light emitting display device100is operated in a bottom-emission type, the color filter can be disposed between the OLED D and the substrate110, e.g., between the interlayer insulating layer132and the planarization layer150. Alternatively, when the organic light emitting display device100is operated in a top-emission type, the color filter can be disposed over the OLED D, e.g., over the second electrode230. An encapsulation film170is formed on the second electrode230to prevent penetration of moisture into the OLED D. The encapsulation film170includes a first inorganic insulating layer172, an organic insulating layer174and a second inorganic insulating layer176sequentially stacked, but it is not limited thereto. The Organic light emitting display device100may further include a polarization plate (not shown) for reducing an ambient light reflection. For example, the polarization plate can be a circular polarization plate. In the bottom-emission type organic light emitting display device100, the polarization plate may be disposed under the substrate110. In the top-emission type organic light emitting display device100, the polarization plate may be disposed on or over the encapsulation film170. In addition, in the top-emission type organic light emitting display device100, a cover window can be attached to the encapsulation film170or the polarization plate. In this instance, the substrate110and the cover window have a flexible property such that a flexible organic light emitting display device can be provided. FIG.3is a schematic cross-sectional view of an OLED according to a second embodiment of the present disclosure. As shown inFIG.3, the OLED D1includes the first and second electrodes210and230, which face each other, and the light emitting layer220therebetween. The light emitting layer220includes an emitting material layer (EML)240. The organic light emitting display device100(ofFIG.2) may include a red pixel region, a green pixel region and a blue pixel region, and the OLED D1may be positioned in the blue pixel region. The first electrode210can be an anode, and the second electrode230can be a cathode. The light emitting layer220further include at least one of a hole transporting layer (HTL)260between the first electrode210and the EML240and an electron transporting layer (ETL)270between the second electrode230and the EML240. In addition, the light emitting layer220can further include at least one of a hole injection layer (HIL)250between the first electrode210and the HTL260and an electron injection layer (EIL)280between the second electrode230and the ETL270. Moreover, the light emitting layer220can further include at least one of an electron blocking layer (EBL)265between the HTL260and the EML240and a hole blocking layer (HBL)275between the EML240and the ETL270. For example, the HIL250may include at least one compound selected from the group consisting of 4,4′,4″-tris(3-methylphenylamino)triphenylamine (MTDATA), 4,4′,4″-tris(N,N-diphenyl-amino)triphenylamine(NATA), 4,4′,4″-tris(N-(naphthalene-1-yl)-N-phenyl-amino)triphenylamine(1T-NATA), 4,4′,4″-tris(N-(naphthalene-2-yl)-N-phenyl-amino)triphenylamine(2T-NATA), copper phthalocyanine(CuPc), tris(4-carbazoyl-9-yl-phenyl)amine(TCTA), N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4″-diamine(NPB; NPD), 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile(dipyrazino[2,3-f:2′3′-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile; HAT-CN), 1,3,5-tris[4-(diphenylamino)phenyl]benzene(TDAPB), poly(3,4-ethylenedioxythiphene)polystyrene sulfonate(PEDOT/PSS), and N-(biphenyl-4-yl)-9,9-dimethyl-N-(4-(9-phenyl-9H-carbazol-3-yl)phenyl)-9H-fluoren-2-amine, but it is not limited thereto. The HTL260may include at least one compound selected from the group consisting of N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine; TPD), NPB(NPD), 4,4′-bis(N-carbazolyl)-1,1′-biphenyl(CBP), poly[N,N′-bis(4-butylpnehyl)-N,N′-bis(phenyl)-benzidine](Poly-TPD), (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyediphenylamine))] (TFB), di-[4-(N,N-di-p-tolyl-amino)-phenyl]cyclohexane(TAPC), 3,5-di(9H-carbazol-9-yl)-N,N-diphenylaniline(DCDPA), N-(biphenyl-4-yl)-9,9-dimethyl-N-(4-(9-phenyl-9H-carbazol-3-yl)phenyl)-9H-fluoren-2-amine, and N-(biphenyl-4-yl)-N-(4-(9-phenyl-9H-carbazol-3-yl)phenyl)biphenyl-4-amine, but it is not limited thereto. The ETL270may include at least one of an oxadiazole-based compound, a triazole-based compound, a phenanthroline-based compound, a benzoxazole-based compound, a benzothiazole-based compound, a benzimidazole-based compound, and a triazine-based compound. For example, the ETL270may include at least one compound selected from the group consisting of tris-(8-hydroxyquinoline aluminum(Alq3), 2-biphenyl-4-yl-5-(4-t-butylphenyl)-1,3,4-oxadiazole(PBD), spiro-PBD, lithium quinolate(Liq), 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene(TPBi), bis(2-methyl-8-quinolinolato-N1,O8)-(1,1′-biphenyl-4-olato)aluminum(BAlq), 4,7-diphenyl-1,10-phenanthroline(Bphen), 2,9-bis(naphthalene-2-yl)4,7-diphenyl-1,10-phenanthroline(NBphen), 2,9-dimethyl-4,7-diphenyl-1,10-phenathroline(BCP), 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole(TAZ), 4-(naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole(NTAZ), 1,3,5-tri(p-pyrid-3-yl-phenyl)benzene(TpPyPB), 2,4,6-tris(3′-(pyridin-3-yl)biphenyl-3-yl)1,3,5-triazine(TmPPPyTz), Poly[9,9-bis(3′-((N,N-dimethyl)-N-ethylammonium)-propyl)-2,7-fluorene]-alt-2,7-(9,9-dioctylfluorene)](PFNBr), tris(phenylquinoxaline(TPQ), and diphenyl-4-triphenylsilyl-phenylphosphine oxide(TSPO1), but it is not limited thereto. The EIL280may include at least one of an alkali halide compound, such as LiF, CsF, NaF, or BaF2, and an organo-metallic compound, such as Liq, lithium benzoate, or sodium stearate, but it is not limited thereto. The EBL265, which is positioned between the HTL260and the EML240to block the electron transfer from the EML240into the HTL260, may include at least one compound selected from the group consisting of TCTA, tris[4-(diethylamino)phenyl]amine, N-(biphenyl-4-yl)-9,9-dimethyl-N-(4-(9-phenyl-9H-carbazol-3-yl)phenyl)-9H-fluoren-2-amine, TAPC, MTDATA, 1,3-bis(carbazol-9-yl)benzene(mCP), 3,3′-bis(N-carbazolyl)-1,1′-biphenyl(mCBP), CuPc, N,N′-bis[4-[bis(3-methylphenyl)amino]phenyl]-N,N′-diphenyl-[1,1′-biphenyl]-4,4′-diamine(DNTPD), TDAPB, DCDPA, and 2,8-bis(9-phenyl-9H-carbazol-3-yl)dibenzo[b,d]thiophene), but it is not limited thereto. The HBL275, which is positioned between the EML240and the ETL270to block the hole transfer from the EML240into the ETL270, may include the above material of the ETL270. For example, the material of the HBL275has a HOMO energy level being lower than a material of the EML240and may be at least one compound selected from the group consisting of BCP, BAlq, Alq3, PBD, spiro-PBD, Liq, bis-4,6-(3,5-di-3-pyridylphenyl)-2-methylpyrimidine(B3PYMPM), bis[2-(diphenylphosphino)phenyl]teeth oxide(DPEPO), 9-(6-9H-carbazol-9-yl)pyridine-3-yl)-9H-3,9′-bicarbazole, and TSPO1, but it is not limited thereto. The EML240includes a first compound of a delayed fluorescent material (compound) and a second compound of a fluorescent material (compound). The EML can further include a third compound as a host. The EML240including the first and second compounds emits blue light, and the OLED D1is positioned in the blue pixel region. For example, the third compound as the host can be one of 9-(3-(9H-carbazol-9-yephenyl)-9H-carbazole-3-carbonitrile (mCP-CN), CBP, 3,3′-bis(N-carbazolyl)-1,1′-biphenyl (mCBP), 1,3-bis(carbazol-9-yebenzene (mCP), oxybis(2,1-phenylene))bis(diphenylphosphine oxide) (DPEPO), 2,8-bis(diphenylphosphoryl)dibenzothiophene (PPT), 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene (TmPyPB), 2,6-di(9H-carbazol-9-yl)pyridine (PYD-2Cz), 2,8-di(9H-carbazol-9-yl)dibenzothiophene (DCzDBT), 3′,5′-di(carbazol-9-yl)-[1,1′-bipheyl]-3,5-dicarbonitrile (DCzTPA), 4′-(9H-carbazol-9-yl)biphenyl-3,5-dicarbonitrile (pCzB-2CN), 3′-(9H-carbazol-9-yl)biphenyl-3,5-dicarbonitrile (mCzB-2CN), diphenyl-4-triphenylsilylphenyl-phosphine oxide (TSPO1), 9-(9-phenyl-9H-carbazol-6-yl)-9H-carbazole (CCP), 4-(3-(triphenylen-2-yl)phenyl)dibenzo[b,d]thiophene), 9-(4-(9H-carbazol-9-yl)phenyl)-9H-3,9′-bicarbazole, 9-(3-(9H-carbazol-9-yl)phenyl)-9H-3,9′-bicarbazole, or 9-(6-(9H-carbazol-9-yl)pyridin-3-yl)-9H-3,9′-bicabazole, but it is not limited thereto. The delayed fluorescent material as the first compound in the EML240is represented by Formula 1. In Formula 1, each of R1 and R2 is independently selected from the group consisting of hydrogen, deuterium, tritium, halogen, C1 to C20 alkyl, C6 to C30 aryl, C5 to C30 heteroaryl, C1 to C20 alkylamine, and C6 to C30 arylamine, and R3 is C5 to C60 heteroaryl including a nitrogen atom. For example, each of R1 and R2 can be independently selected from the group consisting of hydrogen, C1 to C20 alky, e.g., tert-butyl, and C6 to C30 aryl, e.g., phenyl. R3 can be heteroaryl having an electron donor property. For example, R3 can be selected from the group consisting of indolocarbazolyl, diindolocarbazolyl, bis-carbazolyl, acridinyl, spiroacridinyl, phenoxazinyl, phenothiazinyl and their derivatives. The term of “alkyl”, “aryl” and “heteroaryl” can include that substituted one and non-substituted one. When they are substituted, the substituent can be at least one of C1 to C20 alkyl, C6 to C30 aryl and C5 to C30 heteroaryl. For example, the first compound can be one of compounds of Formula 2. A difference between a singlet energy level and a triplet energy level of the delayed fluorescent material is very small (is less than about 0.3 eV). The energy of the triplet exciton of the delayed fluorescent material is converted into the singlet exciton by a reverse intersystem crossing (RISC) such that the delayed fluorescent material has high quantum efficiency. However, since the delayed fluorescent material has wide full width at half maximum (FWHM), the delayed fluorescent material has a disadvantage in a color purity. To overcome the problem of the color purity of the delayed fluorescent material, the EML240further includes the second compound of the fluorescent material to provide a hyper fluorescence. The second compound of the fluorescent material is represented by Formula 3. In Formula 3, each of R11 to R14 is independently selected from the group consisting of hydrogen, deuterium, tritium, boron, nitrogen, C1 to C20 alkyl, C6 to C30 aryl, C5 to C30 heteroaryl, C1 to C20 alkylamine, and C6 to C30 arylamine, or adjacent two of R11 to R14 are combined to form a fused ring including boron and nitrogen. Each of R15 and R18 is independently selected from the group consisting of hydrogen, deuterium, tritium, boron and nitrogen, C1 to C20 alkyl, C6 to C30 aryl, C5 to C30 heteroaryl, C1 to C20 alkylamine, and C6 to C30 arylamine. For example, R12 and R13 can be combined to form a fused ring including boron and nitrogen. The term of “alkyl”, “aryl” and “heteroaryl” can include that substituted one and non-substituted one. When they are substituted, the substituent can be at least one of C1 to C20 alkyl, C6 to C30 aryl and C5 to C30 heteroaryl. The Formula 3 as the second compound can be represented by Formula 4-1 or Formula 4-2. In Formula 4-1, each of R15 to R18 and R21 to R24 is independently selected from the group consisting of hydrogen, deuterium, tritium, boron and nitrogen, C1 to C20 alkyl, C6 to C30 aryl, C5 to C30 heteroaryl, C1 to C20 alkylamine, and C6 to C30 arylamine. In Formula 4-2, each of R15 to R18 and R31 to R34 is independently selected from the group consisting of hydrogen, deuterium, tritium, boron and nitrogen, C1 to C20 alkyl, C6 to C30 aryl, C5 to C30 heteroaryl, C1 to C20 alkylamine, and C6 to C30 arylamine. For example, the second compound can be one of compounds of Formula 5. The EML240in the OLED D of the present disclosure includes the first compound and the second compound, and the exciton of the first compound is transported into the second compound. As a result, the OLED D provide the emission with narrow FWHM and high emitting efficiency. In the OLED D of the present disclosure, an energy level of the first compound and an energy level of the second compound satisfy a pre-determined condition such that the transporting efficiency of the exciton from the first compound into the second compound is increased. Accordingly, the emitting efficiency and the color purity of the OLED D and the organic light emitting display device are improved. In addition, the energy level of the first compound, the energy level of the second compound and an energy level of the third compound satisfy a pre-determined condition such that the emitting efficiency and the color purity of the OLED D and the organic light emitting display device can be further improved. Referring toFIGS.4A and4B, which are a schematic view illustrating an energy level relation of a first compound and a second compound in the OLED of the present disclosure, a difference “ΔHOMO” between a highest occupied molecular orbital (HOMO) energy level “HOMO1” of the first compound and a HOMO energy level “HOMO2” of the second compound is less than 0.3 eV. Namely, the HOMO energy level “HOMO1” of the first compound can be higher than the HOMO energy level “HOMO2” of the second compound as shown inFIG.4A, or the HOMO energy level “HOMO1” of the first compound can be lower than the HOMO energy level “HOMO2” of the second compound as shown inFIG.4B. In this instance, by satisfying the condition of “ΔHOMO<0.3 eV”, the exciton generated in the host is efficiently transferred into the second compound through the first compound. For example, the difference “ΔHOMO” between the HOMO energy level “HOMO1” of the first compound and the HOMO energy level “HOMO2” of the second compound can be about 0.2 eV or less. In addition, a difference “ΔLUMO” between a lowest unoccupied molecular orbital (LUMO) energy level “LUMO1” of the first compound and the LUMO energy level “LUMO2” of the second compound is about 0.3 eV or less. The LUMO energy level “LUMO1” of the first compound can be higher than the LUMO energy level “LUMO2” of the second compound. As mentioned above, the first compound of the delayed fluorescent material uses the singlet exciton energy and the triplet exciton energy for emission. Accordingly, in the EML240including the first and second compounds, the energy of the first compound is transported into the second compound, and the light is emitted from the second compound. As a result, the emitting efficiency and the color purity of the OLED are improved. On the other hand, if a delayed fluorescent material and a fluorescent material in the EML do not satisfy the above energy level relation, there is a limitation in the emitting efficiency and/or the color purity. Namely, referring toFIG.4C, when a difference “ΔHOMO” between a HOMO energy level “HOMO1” of the delayed fluorescent material and a HOMO energy level “HOMO2” of the fluorescent material is greater than or equal to 0.3 eV, a hole can be directly transferred from the host into the fluorescent material such that the emission can be directly generated from the fluorescent material. As a result, the emitting efficiency can be reduced. In addition, as shown inFIG.4D, when a difference “ΔHOMO” between a HOMO energy level “HOMO1” of the delayed fluorescent material and a HOMO energy level “HOMO2” of the fluorescent material is above 0.5 eV and a LUMO energy level “LUMO1” of the delayed fluorescent material is lower than a LUMO energy level “LUMO2” of the fluorescent material, an exciplex can be generated between a hole trapped in the fluorescent material and the LUMO energy level of the delayed fluorescent material such that the exciplex emission can be generated. As a result, the emitting wavelength range can be shifted. In the EML240, the singlet energy level of the first compound is smaller than that of the third compound as the host and greater than that of the second compound. In addition, the triplet energy level of the first compound is smaller than that of the third compound as the host and greater than that of the second compound. In the EML240, a weight ratio (weight %) of the first compound can be greater than that of the second compound and can be smaller than that of the third compound. When the weight ratio of the first compound is greater than that of the second compound, the energy of the first compound is sufficiently transferred into the second compound. For example, in the EML240, the first compound can have a weight % of about 20 to 40, and the second compound can have a weight % of about 0.1 to 5. However, it is not limited thereto. Referring toFIG.5, which is a view illustrating an emission mechanism of an OLED according to the second embodiment of the present disclosure, the single level “S1” and the triplet level “T1” generated in the third compound as a host is respectively transferred into the singlet energy “S1” and the triplet level “T1” of the first compound as a delayed fluorescent material. Since a difference between the singlet energy level of the first compound and the triplet energy level of the first compound is relatively small, the triplet energy level “T1” of the first compound is converted into the singlet energy level “S1” of the first compound by the RISC. For example, the difference (ΔEST) between the singlet energy level of the first compound and the triplet energy level of the first compound can be about 0.3 eV or less. Then, the singlet energy level “S1” of the first compound is transferred into the singlet energy level “S1” of the second compound such that the second compound provide the emission. As mentioned above, the first compound having a delayed fluorescent property has high quantum efficiency. However, since the first compound has wide FWHM, the first compound has a disadvantage in a color purity. On the other hand, the second compound having a fluorescent property has narrow FWHM. However, since the triplet exciton of the second compound is not involved in the emission, the second compound has a disadvantage in an emitting efficiency. However, in the OLED D1of the present disclosure, the singlet energy level of the first compound as the delayed fluorescent material is transferred into the second compound as the fluorescent dopant, and the emission is generated from the second compound. Accordingly, the emitting efficiency and the color purity of the OLED D1are improved. In addition, since the first compound of Formulas 1 and 2 and the second compound of Formulas 3 to 5 are included in the EML240, the emitting efficiency and the color purity of the OLED D1are further improved. [OLED] An anode (ITO, 50 nm), an HIL (HAT-CN (Formula 6-1), 7 nm), an HTL (NPB (Formula 6-2), 45 nm), an EBL (TAPC (Formula 6-3), 10 nm), an EML (30 nm), an HBL (B3PYMPM (Formula 6-4), 10 nm), an ETL (TPBi (Formula 6-5), 30 nm), an EIL (LiF) and a cathode are sequentially deposited to form an OLED. (1) Comparative Example 1 (Ref1) A host (m-CBP (Formula 7), 69 wt %), a compound 1-1 of Formula 2 (30 wt %) and the compound 8-1 of Formula 8 (1 wt %) are used to form the EML. (2) Comparative Example 2 (Ref2) A host (m-CBP (Formula 7), 69 wt %), a compound 1-1 of Formula 2 (30 wt %) and the compound 8-2 of Formula 8 (1 wt %) are used to form the EML. (3) Comparative Example 3 (Ref3) A host (m-CBP (Formula 7), 69 wt %), a compound 1-6 of Formula 2 (30 wt %) and the compound 8-1 of Formula 8 (1 wt %) are used to form the EML. (4) Comparative Example 4 (Ref4) A host (m-CBP (Formula 7), 69 wt %), a compound 1-6 (30 wt %) and the compound 8-2 of Formula 8 (1 wt %) are used to form the EML. (5) Comparative Example 5 (Ref5) A host (m-CBP (Formula 7), 69 wt %), a compound 9-1 of Formula 9 (30 wt %) and the compound 2-1 of Formula 5 (1 wt %) are used to form the EML. (6) Comparative Example 6 (Ref6) A host (m-CBP (Formula 7), 69 wt %), a compound 9-1 of Formula 9 (30 wt %) and the compound 2-10 of Formula 5 (1 wt %) are used to form the EML. (7) Comparative Example 7 (Ref7) A host (m-CBP (Formula 7), 69 wt %), a compound 9-1 of Formula 9 (30 wt %) and the compound 8-1 of Formula 8 (1 wt %) are used to form the EML. (8) Comparative Example 8 (Ref8) A host (m-CBP (Formula 7), 69 wt %), a compound 9-1 of Formula 9 (30 wt %) and the compound 8-2 of Formula 8 (1 wt %) are used to form the EML. (9) Comparative Example 9 (Ref9) A host (m-CBP (Formula 7), 69 wt %), a compound 9-2 of Formula 9 (30 wt %) and the compound 2-1 of Formula 5 (1 wt %) are used to form the EML. (10) Comparative Example 10 (Ref10) A host (m-CBP (Formula 7), 69 wt %), a compound 9-2 of Formula 9 (30 wt %) and the compound 8-1 of Formula 8 (1 wt %) are used to form the EML. (11) Example 1 (Ex1) A host (m-CBP (Formula 7), 69 wt %), the compound 1-1 of Formula 2 (30 wt %) and the compound 2-1 of Formula 5 (1 wt %) are used to form the EML. (12) Example 2 (Ex2) A host (m-CBP (Formula 7), 69 wt %), the compound 1-6 of Formula 2 (30 wt %) and the compound 2-1 of Formula 5 (1 wt %) are used to form the EML. (13) Example 3 (Ex3) A host (m-CBP (Formula 7), 69 wt %), the compound 1-1 of Formula 2 (30 wt %) and the compound 2-10 of Formula 5 (1 wt %) are used to form the EML. (14) Example 4 (Ex4) A host (m-CBP (Formula 7), 69 wt %), the compound 1-6 of Formula 2 (30 wt %) and the compound 2-10 of Formula 5 (1 wt %) are used to form the EML. (15) Example 5 (Ex5) A host (m-CBP (Formula 7), 69 wt %), the compound 1-1 of Formula 2 (30 wt %) and the compound 2-6 of Formula 5 (1 wt %) are used to form the EML. (16) Example 6 (Ex6) A host (m-CBP (Formula 7), 69 wt %), the compound 1-6 of Formula 2 (30 wt %) and the compound 2-6 of Formula 5 (1 wt %) are used to form the EML. The emitting properties of the OLED in Comparative Examples 1 to 10 and Examples 1 to 6 are measured and listed in Table 1. TABLE 1Dopant1Dopant2Vcd/Alm/WCIE(y)EQE [%]Δ HOMO [eV]ExciplexRef11-18-14.9812.17.60.1849.40.3XRef21-18-24.8213.78.90.19110.40.3XRef31-68-15.227.94.70.1547.00.4XRef41-68-26.145.62.90.1635.30.4XRef59-12-14.9812.17.60.2088.50.3XRef69-12-104.8712.38.40.21610.80.5XRef79-18-13.5316.410.70.4179.40.7◯Ref89-18-23.5724.521.00.33610.70.7◯Ref99-22-15.0510.26.70.2126.90.4XRef109-28-13.3517.113.50.4058.30.6◯Ex11-12-13.7246.138.90.20721.20.1XEx21-62-13.7147.241.70.18520.30XEx31-12-103.7840.233.70.20120.60.1XEx41-62-103.8341.433.90.14919.80.2XEx51-12-63.4738.330.40.19218.50.0XEx61-62-63.5837.131.50.18317.80.1X As shown in Table 1, in comparison to the OLED of Comparative Examples 1 to 10, the emitting properties of the OLED in Examples 1 to 6 using the first compound of Formulas 1 and 2 and the second compound of Formulas 3 to 5 are improved. The HOMO energy level and the LUMO energy level of the compounds 1-1 and 1-6 of Formula 2 as the first compound of the present disclosure, the compounds 2-1, 2-6 and 2-10 of Formula 5 as the second compound of the present disclosure, the compounds 8-1 and 8-2 of Formula 8, and the compounds 9-1 and 9-2 of Formula 9 are measured and listed Table 2. TABLE 2HOMOLUMOcompound[eV][eV]1-1−5.5−2.61-6−5.6−2.72-1−5.6−2.92-6−5.4−2.82-10−5.5−2.98-1−5.2−2.78-2−5.2−2.69-1−5.9−2.89-2−6.0−3.0 In the OLED of Examples 1 to 6, the difference between the HOMO energy level of the first compound and the HOMO energy level of the second compound is less than 0.3 eV such that the emitting efficiency of the OLED is improved. On the other hand, in the OLED of Comparative Examples 1 to 10, the difference between the HOMO energy level of the first compound and the HOMO energy level of the second compound is greater than or equal to 0.3 eV such that the emitting efficiency of the OLED is lowered and/or the emitting wavelength range is shifted. FIG.6is a schematic cross-sectional view of an OLED according to a third embodiment of the present disclosure. As shown inFIG.6, an OLED D2according to the third embodiment of the present disclosure includes the first and second electrodes310and330, which face each other, and the light emitting layer320therebetween. The light emitting layer320includes an EML340. The organic light emitting display device100(ofFIG.2) may include a red pixel region, a green pixel region and a blue pixel region, and the OLED D2may be positioned in the blue pixel region. The first electrode310can be an anode, and the second electrode330can be a cathode. The light emitting layer320can further includes at least one of the HTL360between the first electrode310and the EML340and the ETL370between the second electrode330and the EML340. In addition, the light emitting layer320can further include at least one of the HIL350between the first electrode310and the HTL360and the EIL380between the second electrode330and the ETL370. Moreover, the light emitting layer320can further include at least one of the EBL365between the HTL360and the EML340and the HBL375between the EML340and the ETL370. The EML340includes a first EML (a first layer or a lower emitting material layer)342and a second EML (a second layer or an upper emitting material layer)344sequentially stacked over the first electrode310. Namely, the second EML344is positioned between the first EML342and the second electrode330. In the EML340, one of the first and second EMLs342and344includes a first compound including a hexagonal-ring moiety (e.g., six-membered ring), which includes one boron atom, one oxygen atom and four carbon atoms, and the other one of the first and second EMLs342and344includes a second compound including a hexagonal-ring moiety, which includes one boron atom, one nitrogen atom and four carbon atoms. For example, the first compound can be represented by Formula 1 and can be one of the compounds in Formula 2. The first compound has a delayed fluorescent property. The second compound can be represented by one of Formulas 3, 4-1 and 4-2 and can be one of the compounds in Formula 5. The second compound has a fluorescent property. In addition, the first and second EMLs342and344further include a fourth compound and a fifth compound as a host, respectively. The fourth compound in the first EML342and the fifth compound in the second EML344can be same or different. For example, each of the host of the first EML342, i.e., the fourth compound, and the host of the second EML344, i.e., the fifth compound, can be the above third compound. The OLED, where the first EML342includes the first compound of the delayed fluorescent material, will be explained. As mentioned above, the first compound having a delayed fluorescent property has high quantum efficiency. However, since the first compound has wide FWHM, the first compound has a disadvantage in a color purity. On other hand, the second compound having a fluorescent property has narrow FWHM. However, the triplet exciton of the second compound is not involved in the emission, the second compound has a disadvantage in an emitting efficiency. In the OLED D2, since the triplet exciton energy of the first compound in the first EML342is converted into the singlet exciton energy of the first compound and the singlet exciton energy of the first compound is transferred into the singlet exciton energy of the second compound in the second EML344by the RISC, the second compound provides the emission. Accordingly, both the singlet exciton energy and the triplet exciton energy are involved in the emission such that the emitting efficiency is improved. In addition, since the emission is provided from the second compound of the fluorescent material, the emission having narrow FWHM is provided. As mentioned above, the difference between the HOMO energy level of the first compound and the HOMO energy level of the second compound is less than 0.3 eV such that the emitting efficiency of the OLED D2is further improved. In the first EML342, the weight ratio of the fourth compound can be equal to or greater than that of the first compound. In the second EML344, the weight ratio of the fifth compound can be equal to or less than that of the second compound. In addition, a weight ratio of the first compound in the first EML342can be greater than that of the second compound in the second EML344. As a result, the energy is sufficiently transferred from the first compound in the first EML342into the second compound in the second EML344by a fluorescence resonance energy transfer (FRET). For example, the first compound can have a weight % of about 1 to 50 in the first EML342, preferably about 10 to 40, more preferably about 20 to 40. The second compound can have a weight % of about 0.1 to 10 in the second EML344, preferably about 0.1 to 5. When the HBL375is positioned between the second EML344and the ETL370, the fifth compound as the host of the second EML344can be same as a material of the HBL375. In this instance, the second EML344can have a hole blocking function with an emission function. Namely, the second EML344can serve as a buffer layer for blocking the hole. When the HBL375is omitted, the second EML344can serve as an emitting material layer and a hole blocking layer. When the first EML342includes the second compound of the fluorescent material and the EBL365is positioned between the HTL360and the first EML342, the host of the first EML342can be same as a material of the EBL365. In this instance, the first EML342can have an electron blocking function with an emission function. Namely, the first EML342can serve as a buffer layer for blocking the electron. When the EBL365is omitted, the first EML342can serve as an emitting material layer and an electron blocking layer. FIG.7is a schematic cross-sectional view of an OLED according to a fourth embodiment of the present disclosure. As shown inFIG.7, an OLED D3according to the fourth embodiment of the present disclosure includes the first and second electrodes410and430, which face each other, and the light emitting layer420therebetween. The light emitting layer420includes an EML440. The organic light emitting display device100(ofFIG.2) may include a red pixel region, a green pixel region and a blue pixel region, and the OLED D3may be positioned in the blue pixel region. The first electrode410can be an anode, and the second electrode430can be a cathode. The light emitting layer420can further includes at least one of the HTL460between the first electrode410and the EML440and the ETL470between the second electrode430and the EML440. In addition, the light emitting layer420can further include at least one of the HIL450between the first electrode410and the HTL460and the EIL480between the second electrode430and the ETL470. Moreover, the light emitting layer420can further include at least one of the EBL465between the HTL460and the EML440and the HBL475between the EML440and the ETL470. The EML440includes a first EML (a first layer, an intermediate emitting material layer)442, a second EML (a second layer, a lower emitting material layer)444between the first EML442and the first electrode410, and a third EML (a third layer, an upper emitting material layer)446between the first EML442and the second electrode430. Namely, the EML440has a triple-layered structure of the second EML444, the first EML442and the third EML446sequentially stacked. For example, the first EML442can be positioned between the EBL465and the HBL475, the second EML444can be positioned between the EBL465and the first EML442, and the third EML446can be positioned between the HBL475and the first EML442. In the EML440, the first EML442includes a first compound including a hexagonal-ring moiety, which includes one boron atom, one oxygen atom and four carbon atoms, and each of the second and third EMLs444and446includes a second compound including a hexagonal-ring moiety, which includes one boron atom, one nitrogen atom and four carbon atoms. For example, the first compound can be represented by Formula 1 and can be one of the compounds in Formula 2. The first compound has a delayed fluorescent property. The second compound can be represented by one of Formulas 3, 4-1 and 4-2 and can be one of the compounds in Formula 5. The second compound has a fluorescent property. The second compound of the second EML444and the second compound of the third EML446can be same or different. In addition, the first to third EMLs442,444and446further include a sixth compound, a seventh compound and an eighth compound as a host, respectively. The sixth compound in the first EML442, the seventh compound in the second EML444and the eighth compound in the third EML446can be same or different. For example, each of the host of the first EML442, i.e., the sixth compound, the host of the second EML444, i.e., the seventh compound, and the host of the third EML446, i.e., the eighth compound can be the above third compound. In the OLED D3, since the triplet exciton energy of the first compound in the first EML442is converted into the singlet exciton energy of the first compound and the singlet exciton energy of the first compound is transferred into the singlet exciton energy of the second compound in the second EML444and into the singlet exciton energy of the second compound in the third EML446by the RISC, the second compound in the second and third EMLs444and446provides the emission. Accordingly, both the singlet exciton energy and the triplet exciton energy are involved in the emission such that the emitting efficiency is improved. In addition, since the emission is provided from the second compound of the fluorescent material, the emission having narrow FWHM is provided. As mentioned above, the difference between the HOMO energy level of the first compound and the HOMO energy level of the second compound is less than 0.3 eV such that the emitting efficiency of the OLED D2is further improved. In the first EML442, the weight ratio of the sixth compound can be equal to or greater than that of the first compound. In the second EML444, the weight ratio of the seventh compound can be equal to or less than that of the second compound. In the third EML446, the weight ratio of the eighth compound can be equal to or less than that of the second compound. In addition, a weight ratio of the first compound in the first EML442can be greater than each of that of the second compound in the second EML444and that of the second compound in the third EML446. As a result, the energy is sufficiently transferred from the first compound in the first EML442into the second compound in the second EML444and the second compound in the third EML446by a fluorescence resonance energy transfer (FRET). For example, the first compound can have a weight % of about 1 to 50 in the first EML442, preferably about 10 to 40, more preferably about 20 to 40. The second compound can have a weight % of about 0.1 to 10 in each of the second EML444and the third EML446, preferably about 0.1 to 5. The seventh compound as the host of the second EML444can be same as a material of the EBL465. In this instance, the second EML444can have an electron blocking function with an emission function. Namely, the second EML444can serve as a buffer layer for blocking the electron. When the EBL465is omitted, the second EML444can serve as an emitting layer and an electron blocking layer. The eighth compound as the host of the third EML446can be same as a material of the HBL475. In this instance, the third EML446can have a hole blocking function with an emission function. Namely, the third EML446can serve as a buffer layer for blocking the hole. When the HBL475is omitted, the third EML446can serve as an emitting layer and a hole blocking layer. The seventh compound in the second EML444can be same as a material of the EBL465, and the eighth compound in the third EML446can be same as a material of the HBL475. In this instance, the second EML444can have an electron blocking function with an emission function, and the third EML446can have a hole blocking function with an emission function. Namely, the second EML444can serve as a buffer layer for blocking the electron, and the third EML446can serve as a buffer layer for blocking the hole. When the EBL465and the HBL475are omitted, the second EML444can serve as an emitting material layer and an electron blocking layer and the third EML446serves as an emitting material layer and a hole blocking layer. FIG.8is a schematic cross-sectional view of an OLED according to a fifth embodiment of the present disclosure. As shown inFIG.8, the OLED D4includes the first and second electrodes510and530, which face each other, and the emitting layer520therebetween. The organic light emitting display device100(ofFIG.2) may include a red pixel region, a green pixel region and a blue pixel region, and the OLED D4may be positioned in the blue pixel region. The first electrode510may be an anode, and the second electrode530may be a cathode. The emitting layer520includes a first emitting part540including a first EML550and a second emitting part560including a second EML570. In addition, the emitting layer520may further include a charge generation layer (CGL)580between the first and second emitting parts540and560. The CGL580is positioned between the first and second emitting parts540and560such that the first emitting part540, the CGL580and the second emitting part560are sequentially stacked on the first electrode510. Namely, the first emitting part540is positioned between the first electrode510and the CGL580, and the second emitting part580is positioned between the second electrode530and the CGL580. The first emitting part540includes the first EML550. In addition, the first emitting part540may further include at least one of a first HTL540bbetween the first electrode510and the first EML550, an HIL540abetween the first electrode510and the first HTL540b, and a first ETL540ebetween the first EML550and the CGL580. Moreover, the first emitting part540may further include at least one of a first EBL540cbetween the first HTL540band the first EML550and a first HBL540dbetween the first EML550and the first ETL540e. The second emitting part560includes the second EML570. In addition, the second emitting part560may further include at least one of a second HTL560abetween the CGL580and the second EML570, a second ETL560dbetween the second EML570and the second electrode164, and an EIL560ebetween the second ETL560dand the second electrode530. Moreover, the second emitting part560may further include at least one of a second EBL560bbetween the second HTL560aand the second EML570and a second HBL560cbetween the second EML570and the second ETL560d. The CGL580is positioned between the first and second emitting parts540and560. Namely, the first and second emitting parts540and560are connected to each other through the CGL580. The CGL580may be a P-N junction type CGL of an N-type CGL582and a P-type CGL584. The N-type CGL582is positioned between the first ETL540eand the second HTL560a, and the P-type CGL584is positioned between the N-type CGL582and the second HTL560a. The N-type CGL582provides an electron into the first EML550of the first emitting part540, and the P-type CGL584provides a hole into the second EML570of the second emitting part560. The first and second EMLs550and570are a blue EML. At least one of the first and second EMLs550and570includes the first compound of Formula 1 and the second compound of Formula 3. For example, the first EML550may include the first being the delayed fluorescent compound and the second compound being the fluorescent compound. The first EML550may further include a third compound being a host. In the first EML550, the weight ratio of the first compound may be greater than that of the second compound and smaller than that of the third compound. When the weight ratio of the first compound is greater than that of the second compound, the energy transfer from the first compound into the second compound is sufficiently generated. For example, in the first EML550, the first compound may have a weight % of about 20 to 40, the second compound may have a weight % of about 0.1 to 10, and the third compound may have a weight % of about 50 to 80. However, it is not limited thereto. The second EML570may include the first compound of Formula 1 and the second compound of Formula 3. Namely, the second EML570may have the same organic compound as the first EML550. Alternatively, the second EML570may include a compound being different from at least one of the first compound and the second compound in the first EML550such that the first and second EMLs550and570have a different in an emitted-light wavelength or an emitting efficiency. In the OLED D4of the present disclosure, the singlet energy level of the first compound as the delayed fluorescent material is transferred into the second compound as the fluorescent dopant, and the emission is generated from the second compound. Accordingly, the emitting efficiency and the color purity of the OLED D4are improved. In addition, since the first compound of Formulas 1 and 2 and the second compound of Formulas 3 to 5 are included in the first EML550, the emitting efficiency and the color purity of the OLED D1are further improved. Moreover, since the OLED D4has a two-stack structure (double-stack structure) with two green EMLs, the color sense of the OLED D4is improved and/or the emitting efficiency of the OLED D4is optimized. FIG.9is a schematic cross-sectional view of an organic light emitting display device according to a sixth embodiment of the present disclosure. As shown inFIG.9, the organic light emitting display device600includes a first substrate610, where a first pixel region P1, a second pixel region P2and a third pixel region P3are defined, a second substrate670facing the first substrate610, an OLED D, which is positioned between the first and second substrates610and670and providing blue emission, and a color conversion layer680between the OLED D and the second substrate670. For example, the first pixel region P1may be a blue pixel region, the second pixel region P2may be a red pixel region, and the third pixel region P3may be a green pixel region. Each of the first and second substrates610and670may be a glass substrate or a flexible substrate. For example, the flexible substrate may be a polyimide (PI) substrate, a polyethersulfone (PES) substrate, a polyethylenenaphthalate (PEN) substrate, a polyethylene terephthalate (PET) substrate or a polycarbonate (PC) substrate. A TFT Tr, which corresponding to each of the red, green and blue pixels RP, GP and BP, is formed on the first substrate610. Alternatively, a buffer layer (not shown) may be formed on the first substrate610, and the TFT Tr may be formed on the buffer layer. As explained withFIG.2, the TFT Tr may include a semiconductor layer, a gate electrode, a source electrode and a drain electrode and may serve as a driving element. A planarization layer (or passivation layer)650is formed on the TFT Tr. The planarization layer1050has a flat top surface and includes a drain contact hole652exposing the drain electrode of the TFT Tr. The OLED D is disposed on the planarization layer650and includes a first electrode660, an emitting layer662and a second electrode664. The first electrode660is connected to the drain electrode of the TFT Tr, and the emitting layer662and the second electrode664are sequentially stacked on the first electrode660. The first electrode660is formed to be separate in the first to third pixel regions P1to P3, and the second electrode664is formed as one-body to cover the first to third pixel regions P1to P3. The first electrode660is one of an anode and a cathode, and the second electrode664is the other one of the anode and the cathode. In addition, the first electrode660may be a reflecting electrode, and the second electrode664may be a light transmitting electrode (or a semi-transmitting electrode). For example, the first electrode660may be the anode and may be formed of a conductive material having a relatively high work function. The first electrode660may include a transparent conductive oxide material layer formed of a transparent conductive oxide (TCO) material and a reflection layer (or a reflection electrode layer). The second electrode664may be the cathode and may include a metallic material layer formed of a low resistance metallic material having a relatively low work function. For example, the first electrode660may have a structure of ITO/Ag/ITO or ITO/APC/ITO, but it is not limited thereto. The second electrode664may include Al, Mg, Ca, Ag or Mg—Ag alloy and may have a thin profile to be transparent (or semi-transparent). A bank layer666is formed on the planarization layer650to cover an edge of the first electrode660. Namely, the bank layer666is positioned at a boundary of the first to third pixel regions P1to P3and exposes a center of the first electrode660in the first to third pixel regions P1to P3. Since the OLED D emits the blue light in the first to third pixel regions P1to P3, the emitting layer662may be formed as a common layer in the first to third pixel regions P1to P3without separation in the first to third pixel regions P1to P3. The bank layer666may be formed to prevent the current leakage at an edge of the first electrode660and may be omitted. The emitting layer662as an emitting unit is formed on the first electrode660. For example, the emitting layer662may have a structure ofFIG.3,FIG.6orFIG.8and may provide a blue light. Namely, the OLED D in the first to third pixel regions P1to P3emits the blue light. The color conversion layer680includes a first color conversion layer682corresponding to the second pixel region P2and a second color conversion layer684corresponding to the third pixel region P3. The first color conversion layer682may be a red color conversion layer, and the second color conversion layer684may be a green color conversion layer. For example, the color conversion layer680may include an inorganic color conversion material such as a quantum dot. The blue light from the OLED D is converted into the red light by the first color conversion layer682in the second pixel region P2, and the blue light from the OLED D is converted into the green light by the second color conversion layer684in the third pixel region P3. Accordingly, the organic light emitting display device600can display a full-color image. On the other hand, in the bottom emission type organic light emitting display device600, the color conversion layer680is disposed between the OLED D and the first substrate610. Although not shown, the organic light emitting display device600may further include a color filter layer between the second substrate670and the color conversion layer680. In this instance, the color purity of the organic light emitting display device600may be further improved. On the other hand, in the bottom emission type organic light emitting display device600, the color filter layer may be disposed between the first substrate610and the color conversion layer680. FIG.10is a schematic cross-sectional view of an organic light emitting display device according to a seventh embodiment of the present disclosure. As shown inFIG.10, the organic light emitting display device1000includes a substrate1010, wherein first to third pixel regions P1, P2and P3are defined, a TFT Tr over the substrate1010and an OLED D5. The OLED D5is disposed over the TFT Tr and is connected to the TFT Tr. For example, the first to third pixel regions P1, P2and P3may be a blue pixel region, a red pixel region and a green pixel region, respectively. The substrate1010may be a glass substrate or a flexible substrate. For example, the flexible substrate may be a polyimide (PI) substrate, a polyethersulfone (PES) substrate, a polyethylenenaphthalate (PEN) substrate, a polyethylene terephthalate (PET) substrate or a polycarbonate (PC) substrate. A buffer layer1012is formed on the substrate1010, and the TFT Tr is formed on the buffer layer1012. The buffer layer1012may be omitted. As explained withFIG.2, the TFT Tr may include a semiconductor layer, a gate electrode, a source electrode and a drain electrode and may serve as a driving element. A planarization layer (or passivation layer)1050is formed on the TFT Tr. The planarization layer1050has a flat top surface and includes a drain contact hole1052exposing the drain electrode of the TFT Tr. The OLED D5is disposed on the planarization layer1050and includes a first electrode1060, an emitting layer1062and a second electrode1064. The first electrode1060is connected to the drain electrode of the TFT Tr, and the emitting layer1062and the second electrode1064are sequentially stacked on the first electrode1060. The OLED D5is disposed in each of the first to third pixel regions P1to P3and emits different color light in the first to third pixel regions P1to P3. For example, the OLED D5in the first pixel region P1may emit the blue light, the OLED D5in the second pixel region P2may emit the red light, and the OLED D5in the third pixel region P3may emit the green light. The first electrode1060is formed to be separate in the first to third pixel regions P1to P3, and the second electrode1064is formed as one-body to cover the first to third pixel regions P1to P3. The first electrode1060is one of an anode and a cathode, and the second electrode1064is the other one of the anode and the cathode. In addition, one of the first and second electrodes1060and1064may be a light transmitting electrode (or a semi-transmitting electrode), and the other one of the first and second electrodes1060and1064may be a reflecting electrode. For example, the first electrode1060may be the anode and may include a transparent conductive oxide material layer formed of a transparent conductive oxide (TCO) material having a relatively high work function. The second electrode1064may be the cathode and may include a metallic material layer formed of a low resistance metallic material having a relatively low work function. For example, the transparent conductive oxide material layer of the first electrode1060include at least one of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-tin-zinc oxide (ITZO), tin oxide (SnO), zinc oxide (ZnO), indium-copper-oxide (ICO) and aluminum-zinc oxide alloy (Al:ZnO), and the second electrode1064may include Al, Mg, Ca, Ag, their alloy, e.g., Mg—Ag alloy, or their combination. In the bottom-emission type organic light emitting display device1000, the first electrode1060may have a single-layered structure of the transparent conductive oxide material layer. On the other hand, in the top-emission type organic light emitting display device1000, a reflection electrode or a reflection layer may be formed under the first electrode1060. For example, the reflection electrode or the reflection layer may be formed of Ag or aluminum-palladium-copper (APC) alloy. In this instance, the first electrode1060may have a triple-layered structure of ITO/Ag/ITO or ITO/APC/ITO. In addition, the second electrode1064may have a thin profile (small thickness) to provide a light transmittance property (or a semi-transmittance property). A bank layer1066is formed on the planarization layer1050to cover an edge of the first electrode1060. Namely, the bank layer1066is positioned at a boundary of the first to third pixel regions P1to P3and exposes a center of the first electrode1060in the first to third pixel regions P1to P3. The emitting layer1062as an emitting unit is formed on the first electrode1060. The emitting layer1062may have a single-layered structure of an EML. Alternatively, the emitting layer1062may further include at least one of an HIL, an HTL, an EBL, which are sequentially stacked between the first electrode1060and the EML, an HBL, an ETL and an EIL, which are sequentially stacked between the EML and the second electrode1064. In the first pixel region P1being the blue pixel region, the EML of the emitting layer1062includes the first compound being the delayed fluorescent compound and the second compound being the fluorescent compound. The EML of the emitting layer1062may further include a third compound being a host. The first compound is represented by Formula 1, and the second compound is represented by Formula 3. An encapsulation film1070is formed on the second electrode1064to prevent penetration of moisture into the OLED D5. The encapsulation film1070may have a triple-layered structure including a first inorganic insulating layer, an organic insulating layer and a second inorganic insulating layer, but it is not limited thereto. The organic light emitting display device1000may further include a polarization plate (not shown) for reducing an ambient light reflection. For example, the polarization plate may be a circular polarization plate. In the bottom-emission type organic light emitting display device1000, the polarization plate may be disposed under the substrate1010. In the top-emission type organic light emitting display device1000, the polarization plate may be disposed on or over the encapsulation film1070. FIG.11is a schematic cross-sectional view of an OLED according to an eighth embodiment of the present disclosure. Referring toFIG.11withFIG.10, the OLED D5is positioned in each of first to third pixel regions P1to P3and includes the first and second electrodes1060and1064, which face each other, and the emitting layer1062therebetween. The emitting layer1062includes an EML1090. The first electrode1060may be an anode, and the second electrode1064may be a cathode. For example, the first electrode1060may be a reflective electrode, and the second electrode1064may be a transmitting electrode (or a semi-transmitting electrode). The emitting layer1062may further include an HTL1082between the first electrode1060and the EML1090and an ETL1094between the EML1090and the second electrode1064. In addition, the emitting layer1062may further include an HIL1080between the first electrode1060and the HTL1082and an EIL1096between the ETL1094and the second electrode1064. Moreover, the emitting layer1062may further include an EBL1086between the EML1090and the HTL1082and an HBL1092between the EML1090and the ETL1094. Furthermore, the emitting layer1062may further include an auxiliary HTL1084between the HTL1082and the EBL1086. The auxiliary HTL1084may include a first auxiliary HTL1084ain the first pixel region P1, a second auxiliary HTL1084bin the second pixel region P2and a third auxiliary HTL1084cin the third pixel region P3. The first auxiliary HTL1084ahas a first thickness, the second auxiliary HTL1084bhas a second thickness, and the third auxiliary HTL1084chas a third thickness. The third thickness is smaller than the second thickness and greater than the first thickness such that the OLED D5provides a micro-cavity structure. Namely, by the first to third auxiliary HTLs1084a,1084band1084chaving a difference in a thickness, a distance between the first and second electrodes1060and1064in the third pixel region P3, in which a first wavelength range light, e.g., green light, is emitted, is smaller than a distance between the first and second electrodes1060and1064in the second pixel region P2, in which a second wavelength range light, e.g., red light, being greater than the first wavelength range is emitted, and is greater than a distance between the first and second electrodes1060and1064in the first pixel region P1, in which a third wavelength range light, e.g., blue light, being smaller than the first wavelength range is emitted. Accordingly, the emitting efficiency of the OLED D5is improved. InFIG.11, the third auxiliary HTL1084cis formed in the first pixel region P1. Alternatively, a micro-cavity structure may be provided without the third auxiliary HTL1084c. A capping layer (not shown) for improving a light-extracting property may be further formed on the second electrode1084. The EML1090includes a first EML1090ain the first pixel region P1, a second EML1090bin the second pixel region P2and a third EML1090cin the third pixel region P3. The first to third EMLs1090a,1090band1090cmay be a blue EML, a red EML and a green EML, respectively. The first EML1090ain the first pixel region P1includes the first compound being the delayed fluorescent compound and the second compound being the fluorescent compound. The first EML1090ain the first pixel region P1may further include a third compound being a host. The first compound is represented by Formula 1, and the second compound is represented by Formula 3. In the first EML1090ain the first pixel region P1, the weight ratio of the first compound may be greater than that of the second compound and smaller than that of the third compound. When the weight ratio of the first compound is greater than that of the second compound, the energy transfer from the first compound into the second compound is sufficiently generated. For example, in the first EML1090ain the first pixel region P1, the first compound may have a weight % of about 20 to 40, the second compound may have a weight % of about 0.1 to 10, and the third compound may have a weight % of about 50 to 80. However, it is not limited thereto. Each of the second EML1090bin the second pixel region P2and the third EML1090cin the third pixel region P3may include a host and a dopant. For example, in each of the second EML1090bin the second pixel region P2and the third EML1090cin the third pixel region P3, the dopant may include at least one of a phosphorescent compound, a fluorescent compound and a delayed fluorescent compound. The OLED D5inFIG.11respectively emits the blue light, the red light and the green light in the first to third pixel regions P1to P3such that the organic light emitting display device1000(ofFIG.10) can provide a full-color image. The organic light emitting display device1000may further include a color filter layer corresponding to the first to third pixel regions P1to P3to improve a color purity. For example, the color filter layer may include a first color filter layer, e.g., a blue color filter layer, corresponding to the first pixel region P1, a second color filter layer, e.g., a red color filter layer, corresponding to the second pixel region P2, and a third color filter layer, e.g., a green color filter layer, corresponding to the third pixel region P3. In the bottom-emission type organic light emitting display device1000, the color filter layer may be disposed between the OLED D5and the substrate1010. On the other hand, in the top-emission type organic light emitting display device1000, the color filter layer may be disposed on or over the OLED D5. FIG.12is a schematic cross-sectional view of an organic light emitting display device according to a ninth embodiment of the present disclosure. As shown inFIG.12, the organic light emitting display device1100includes a substrate1110, wherein first to third pixel regions P1, P2and P3are defined, a TFT Tr over the substrate1110, an OLED D, which is disposed over the TFT Tr and is connected to the TFT Tr, and a color filter layer1120corresponding to the first to third pixel regions P1to P3. For example, the first to third pixel regions P1, P2and P3may be a blue pixel region, a red pixel region and a green pixel region, respectively. The substrate1110may be a glass substrate or a flexible substrate. For example, the flexible substrate may be a polyimide (PI) substrate, a polyethersulfone (PES) substrate, a polyethylenenaphthalate (PEN) substrate, a polyethylene terephthalate (PET) substrate or a polycarbonate (PC) substrate. The TFT Tr is formed on the substrate1110. Alternatively, a buffer layer (not shown) may be formed on the substarte1110, and the TFT Tr may be formed on the buffer layer. As explained withFIG.2, the TFT Tr may include a semiconductor layer, a gate electrode, a source electrode and a drain electrode and may serve as a driving element. In addition, the color filter layer1120is disposed on the substrate1110. For example, the color filter layer1120may include a first color filter layer1122corresponding to the first pixel region P1, a second color filter layer1124corresponding to the second pixel region P2, and a third color filter layer1126corresponding to the third pixel region P3. The first to third color filter layers1122,1124and1126may be a blue color filter layer, a red color filter layer and a green color filter layer, respectively. For example, the first color filter layer1122may include at least one of a blue dye and a blue pigment, and the second color filter layer1124may include at least one of a red dye and a red pigment. The third color filter layer1126may include at least one of a green dye and a green pigment. A planarization layer (or passivation layer)1150is formed on the TFT Tr and the color filter layer1120. The planarization layer1150has a flat top surface and includes a drain contact hole1152exposing the drain electrode of the TFT Tr. The OLED D is disposed on the planarization layer1150and corresponds to the color filter layer1120. The OLED D includes a first electrode1160, an emitting layer1162and a second electrode1164. The first electrode1160is connected to the drain electrode of the TFT Tr, and the emitting layer1162and the second electrode1164are sequentially stacked on the first electrode1160. The OLED D emits the white light in each of the first to third pixel regions P1to P3. The first electrode1160is formed to be separate in the first to third pixel regions P1to P3, and the second electrode1164is formed as one-body to cover the first to third pixel regions P1to P3. The first electrode1160is one of an anode and a cathode, and the second electrode1164is the other one of the anode and the cathode. In addition, the first electrode1160may be a light transmitting electrode (or a semi-transmitting electrode), and the second electrode1164may be a reflecting electrode. For example, the first electrode1160may be the anode and may include a transparent conductive oxide material layer formed of a transparent conductive oxide (TCO) material having a relatively high work function. The second electrode1164may be the cathode and may include a metallic material layer formed of a low resistance metallic material having a relatively low work function. For example, the transparent conductive oxide material layer of the first electrode1160include at least one of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-tin-zinc oxide (ITZO), tin oxide (SnO), zinc oxide (ZnO), indium-copper-oxide (ICO) and aluminum-zinc oxide alloy (Al:ZnO), and the second electrode1164may include Al, Mg, Ca, Ag, their alloy, e.g., Mg—Ag alloy, or their combination. The emitting layer1162as an emitting unit is formed on the first electrode1160. The emitting layer1162includes at least two emitting parts emitting different color light. Each emitting part may have a single-layered structure of an EML. Alternatively, each emitting part may further include at least one of an HIL, an HTL, an EBL, an HBL, an ETL and an EIL. In addition, the emitting layer1162may further include a charge generation layer (CGL) between the emitting parts. The EML of one of the emitting parts includes the first compound of Formula 1 and the second compound of Formula 3. For example, the EML of one of the emitting parts may include the first compound being the delayed fluorescent compound and the second compound being the fluorescent compound. The EML of one of the emitting parts may further include a third compound being a host. A bank layer1166is formed on the planarization layer1150to cover an edge of the first electrode1160. Namely, the bank layer1166is positioned at a boundary of the first to third pixel regions P1to P3and exposes a center of the first electrode1160in the first to third pixel regions P1to P3. As mentioned above, since the OLED D emits the white light in the first to third pixel regions P1to P3, the emitting layer1162may be formed as a common layer in the first to third pixel regions P1to P3without separation in the first to third pixel regions P1to P3. The bank layer1166may be formed to prevent the current leakage at an edge of the first electrode1160and may be omitted. Although not shown, the organic light emitting display device1100may further include an encapsulation film is formed on the second electrode1164to prevent penetration of moisture into the OLED D. In addition, the organic light emitting display device1100may further include a polarization plate under the substrate1110for reducing an ambient light reflection. In the organic light emitting display device1100ofFIG.12, the first electrode1160is a transparent electrode (light transmitting electrode), and the second electrode1164is a reflecting electrode. In addition, the color filter layer1120is positioned between the substrate1110and the OLED D. Namely, the organic light emitting display device11000is a bottom-emission type. Alternatively, in the organic light emitting display device1100, the first electrode1160may be a reflecting electrode, and the second electrode1154may be a transparent electrode (or a semi-transparent electrode). In this case, the color filter layer1120is positioned on or over the OLED D. In the organic light emitting display device1100, the OLED D in the first to third pixel regions P1to P3emits the white light, and the white light passes through the first to third color filter layers1122,1124and1126. Accordingly, the blue light, the red light and the green light are displayed in the first to third pixel regions P1to P3, respectively. Although not shown, a color conversion layer may be formed between the OLED D and the color filter layer1120. The color conversion layer may include a blue color conversion layer, a red color conversion layer and a green color conversion layer respectively corresponding to the first to third pixel regions P1to P3, and the white light from the OLED D can be converted into the blue light, the red light and the green light. The color conversion layer may include a quantum dot. Accordingly, the color purity of the OLED D may be further improved. The color conversion layer may be included instead of the color filter layer1120. FIG.13is a schematic cross-sectional view of an OLED according to a tenth embodiment of the present disclosure. As shown inFIG.13, the OLED D6includes the first and second electrodes1160and1164, which face each other, and the emitting layer1162therebetween. The first electrode1160may be an anode, and the second electrode1164may be a cathode. The first electrode1160is a transparent electrode (a light transmitting electrode), and the second electrode1164is a reflecting electrode. The emitting layer1162includes a first emitting part1210including a first EML1220, a second emitting part1230including a second EML1240and a third emitting part1250including a third EML1260. In addition, the emitting layer1162may further include a first CGL1270between the first and second emitting parts1210and1230and a second CGL1280between the first emitting part1210and the third emitting part1250. The first CGL1270is positioned between the first and second emitting parts1210and1230, and the second CGL1280is positioned between the second and third emitting parts1230and1250. Namely, the third emitting part1250, the second CGL1280, the second emitting part1230, the first CGL1270and the first emitting part1230are sequentially stacked on the first electrode1160. In other words, the first emitting part1210is positioned between the second electrode and the first and second CGL1270, and the second emitting part1230is positioned between the first and second CGLs1270and1280. The third emitting part1250is positioned between the second CGL1280and the first electrode1160. The first emitting part1210may further include a first HTL1210aunder the first EML1220and a first ETL1210bover the first EML1220. Namely, the first HTL1210amay positioned between the first EML1220and the second CGL1270, and the first ETL1210bmay be positioned between the first EML1220and the first CGL1270. In addition, the first emitting part1210may further include a first HTL1210aunder the first EML1220, a first ETL1210bover the first EML1220and an EIL1210cover the first ETL1210b. Namely, the first HTL1210ais positioned between the first EML1220and the first CGL1270, and the first ETL1210band the EIL1210care positioned between the first EML1220and the second electrode1164. In addition, the first emitting part1210may further include an EBL (not shown) between the first HTL1210aand the first EML1220and an HBL (not shown) between the first ETL1210band the first EML1220. The second emitting part1230may further include a second HTL1230aunder the second EML1240and a second ETL1230bover the second EML1240. Namely, the second HTL1230ais positioned between the second EML1240and the second CGL1280, and the second ETL1230bis positioned between the second EML1240and the first CGL1270. In addition, the second emitting part1230may further include an EBL (not shown) between the second HTL1230aand the second EML1240and an HBL (not shown) between the second ETL1230band the second EML1240. The third emitting part1250may further include an HIL1250aand a third HTL1250bunder the third EML1260and a third ETL1250cover the third EML1260. Namely, the HIL1250aand the third HTL1250bare positioned between the third EML1260and the first electrode1160, and the third ETL1250bis positioned between the third EML1260and the second CGL1280. In addition, the third emitting part1250may further include an EBL (not shown) between the third HTL1250band the third EML1260and an HBL (not shown) between the third ETL1250cand the third EML1260. One of the first to third EMLs1220,1240and1260may be a blue EML, another one of the first to third EMLs1220,1240and1260may be a green EML, and the other one of the first to third EMLs1220,1240and1260may be a red EML. For example, the first EML1220may be a blue EML, the second EML1240may be a green EML, and the third EML1260may be a red EML. Alternatively, the first EML1220may be a blue EML, the second EML1240may be a red EML, and the third EML1260may be a green EML. The first EML1220includes the first compound being the delayed fluorescent compound and the second compound being the fluorescent compound. The first EML1220may further include a third compound being a host. The first compound is represented by Formula 1, and the second compound is represented by Formula 3. In the first EML1220, the weight ratio of the first compound may be greater than that of the second compound and smaller than that of the third compound. When the weight ratio of the first compound is greater than that of the second compound, the energy transfer from the first compound into the second compound is sufficiently generated. For example, in the first EML1220, the first compound may have a weight % of about 20 to 40, the second compound may have a weight % of about 0.1 to 10, and the third compound may have a weight % of about 50 to 80. However, it is not limited thereto. The second EML1240includes a host and a green dopant (or a red dopant), and the third EML1260includes a host and a red dopant (or a green dopant). For example, in each of the second and third EMLs1240and1260, the dopant may include at least one of a phosphorescent compound, a fluorescent compound and a delayed fluorescent compound. The OLED D6in the first to third pixel regions P1to P3(ofFIG.12) emits the white light, and the white light passes through the color filter layer1120(ofFIG.12) in the first to third pixel regions P1to P3. Accordingly, the organic light emitting display device1100(ofFIG.12) can provide a full-color image. FIG.14is a schematic cross-sectional view of an OLED according to an eleventh embodiment of the present disclosure. As shown inFIG.14, the OLED D7includes the first and second electrodes1360and1364, which face each other, and the emitting layer1362therebetween. The first electrode1360may be an anode, and the second electrode1364may be a cathode. The first electrode1360is a transparent electrode (a light transmitting electrode), and the second electrode1364is a reflecting electrode. The emitting layer1362includes a first emitting part1410including a first EML1420, a second emitting part1430including a second EML1440and a third emitting part1450including a third EML1460. In addition, the emitting layer1362may further include a first CGL1470between the first and third emitting parts1410and1450and a second CGL1480between the second emitting part1430and the third emitting part1450. The first CGL1470is positioned between the first and third emitting parts1410and1450, and the second CGL1480is positioned between the second and third emitting parts1430and1450. Namely, the second emitting part1430, the second CGL1480, the third emitting part1450, the first CGL1470and the first emitting part1410are sequentially stacked on the first electrode1360. In other words, the first emitting part1410is positioned between the second electrode1364and the first CGL1470, and the second emitting part1430is positioned between the second CGL1480and the first electrode1360. The third emitting part1450is positioned between the first and second CGLs1470and1480. The first emitting part1410may further include a first HTL1410aunder the first EML1420and a first ETL1410band an EIL1410cover the first EML1420. Namely, the first HTL1410amay positioned between the first EML1420and the first CGL1470, and the first ETL1410band the EIL1410cmay be positioned between the first EML1420and the second electrode1364. In addition, the first emitting part1410may further include an EBL (not shown) between the first HTL1410aand the first EML1420and an HBL (not shown) between the first ETL1410band the first EML1420. The second emitting part1430may further include an HIL1430a, a second HTL1430bunder the second EML1440and a second ETL1430cover the second EML1440. Namely, the HIL1430a, the second HTL1430bmay be positioned between the first electrode1360and the second EML1440, and the second ETL1430cmay be positioned between the second EML1440and the second CGL1480. In addition, the second emitting part1430may further include an EBL (not shown) between the second HTL1430band the second EML1440and an HBL (not shown) between the second ETL1430cand the second EML1440. The third emitting part1450may further include a third HTL1450aunder the third EML1460and a third ETL1450bover the third EML1460. Namely, the third HTL1450amay be positioned between the second CGL1480and the third EML1460, and the third ETL1450bmay be positioned between the third EML1460and the first CGL1470. In addition, the third emitting part1450may further include an EBL (not shown) between the third HTL1450aand the third EML1460and an HBL (not shown) between the third ETL1450band the third EML1460. Each of the first and second EMLs1420and1440is a blue EML. At least one of the first and second EMLs1420and1440, e.g., the first EML1420, includes the first compound of Formula 1 and the second compound of Formula 3. In addition, the first EML1420may further include a third compound as a host. In the first EML1220, the weight ratio of the first compound may be greater than that of the second compound and smaller than that of the third compound. When the weight ratio of the first compound is greater than that of the second compound, the energy transfer from the first compound into the second compound is sufficiently generated. For example, in the first EML1420, the first compound may have a weight % of about 20 to 40, the second compound may have a weight % of about 0.1 to 10, and the third compound may have a weight % of about 50 to 80. However, it is not limited thereto. The second EML1440may include the first compound of Formula 1 and the second compound of Formula 3. Namely, the second EML1440may have the same organic compound as the first EML1420. Alternatively, the second EML1440may include a compound being different from at least one of the first compound and the second compound in the first EML1420such that the first and second EMLs1420and1440have a different in an emitted-light wavelength or an emitting efficiency. The third EML1460includes a lower EML1460aand an upper EML1420b. The lower EML1460ais closer to the first electrode1360, and the upper EML1460bis closer to the second electrode1364. One of the lower and upper EMLs1460aand1460bof the third EML1460is a green EML, and the other one of the lower and upper EMLs1460aand1460bof the third EML1460may be a red EML. Namely, the green EML (or the red EML) and the red EML (or the green EML) are sequentially stacked to form the third EML1460. Each of the lower EML1460aand the upper EML1460bmay include a host and a dopant. In each of the lower EML1460aand the upper EML1460b, the dopant may include at least one of a phosphorescent compound, a fluorescent compound and a delayed fluorescent compound. Alternatively, the third EML1460may have a single-layered structure of a yellow-green EML. The OLED D7in the first to third pixel regions P1to P3(ofFIG.12) emits the white light, and the white light passes through the color filter layer1120(ofFIG.12) in the first to third pixel regions P1to P3. Accordingly, the organic light emitting display device1100(ofFIG.12) can provide a full-color image. InFIG.14, the OLED D7has a three-stack (triple-stack) structure including the first and second EMLs1420and1440being the blue EML with the third EML1460. Alternatively, one of the first and second EMLs1420and1440may be omitted such that the OLED D7may have a two-stack (double-stack) structure. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents. | 89,525 |
11943999 | DETAILED DESCRIPTION Generally, an OLED comprises at least one organic layer disposed between and electrically connected to an anode and a cathode. When a current is applied, the anode injects holes and the cathode injects electrons into the organic layer(s). The injected holes and electrons each migrate toward the oppositely charged electrode. When an electron and hole localize on the same molecule, an “exciton,” which is a localized electron-hole pair having an excited energy state, is formed. Light is emitted when the exciton relaxes via a photoemissive mechanism. In some cases, the exciton may be localized on an excimer or an exciplex. Non-radiative mechanisms, such as thermal relaxation, may also occur, but are generally considered undesirable. The initial OLEDs used emissive molecules that emitted light from their singlet states (“fluorescence”) as disclosed, for example, in U.S. Pat. No. 4,769,292, which is incorporated by reference in its entirety. Fluorescent emission generally occurs in a time frame of less than 10 nanoseconds. More recently, OLEDs having emissive materials that emit light from triplet states (“phosphorescence”) have been demonstrated. Baldo et al., “Highly Efficient Phosphorescent Emission from Organic Electroluminescent Devices,” Nature, vol. 395, 151-154, 1998; (“Baldo-I”) and Baldo et al., “Very high-efficiency green organic light-emitting devices based on electrophosphorescence,” Appl. Phys. Lett., vol. 75, No. 3, 4-6 (1999) (“Baldo-II”), which are incorporated by reference in their entireties. Phosphorescence is described in more detail in U.S. Pat. No. 7,279,704 at cols. 5-6, which are incorporated by reference. FIG.1shows an organic light emitting device100. The figures are not necessarily drawn to scale. Device100may include a substrate110, an anode115, a hole injection layer120, a hole transport layer125, an electron blocking layer130, an emissive layer135, a hole blocking layer140, an electron transport layer145, an electron injection layer150, a protective layer155, a cathode160, and a barrier layer170. Cathode160is a compound cathode having a first conductive layer162and a second conductive layer164. Device100may be fabricated by depositing the layers described, in order. The properties and functions of these various layers, as well as example materials, are described in more detail in U.S. Pat. No. 7,279,704 at cols. 6-10, which are incorporated by reference. More examples for each of these layers are available. For example, a flexible and transparent substrate-anode combination is disclosed in U.S. Pat. No. 5,844,363, which is incorporated by reference in its entirety. An example of a p-doped hole transport layer is m-MTDATA doped with F4-TCNQ at a molar ratio of 50:1, as disclosed in U.S. Patent Application Publication No. 2003/0230980, which is incorporated by reference in its entirety. Examples of emissive and host materials are disclosed in U.S. Pat. No. 6,303,238 to Thompson et al., which is incorporated by reference in its entirety. An example of an n-doped electron transport layer is BPhen doped with Li at a molar ratio of 1:1, as disclosed in U.S. Patent Application Publication No. 2003/0230980, which is incorporated by reference in its entirety. U.S. Pat. Nos. 5,703,436 and 5,707,745, which are incorporated by reference in their entireties, disclose examples of cathodes including compound cathodes having a thin layer of metal such as Mg:Ag with an overlying transparent, electrically-conductive, sputter-deposited ITO layer. The theory and use of blocking layers is described in more detail in U.S. Pat. No. 6,097,147 and U.S. Patent Application Publication No. 2003/0230980, which are incorporated by reference in their entireties. Examples of injection layers are provided in U.S. Patent Application Publication No. 2004/0174116, which is incorporated by reference in its entirety. A description of protective layers may be found in U.S. Patent Application Publication No. 2004/0174116, which is incorporated by reference in its entirety. FIG.2shows an inverted OLED200. The device includes a substrate210, a cathode215, an emissive layer220, a hole transport layer225, and an anode230. Device200may be fabricated by depositing the layers described, in order. Because the most common OLED configuration has a cathode disposed over the anode, and device200has cathode215disposed under anode230, device200may be referred to as an “inverted” OLED. Materials similar to those described with respect to device100may be used in the corresponding layers of device200.FIG.2provides one example of how some layers may be omitted from the structure of device100. The simple layered structure illustrated inFIGS.1and2is provided by way of non-limiting example, and it is understood that embodiments of the invention may be used in connection with a wide variety of other structures. The specific materials and structures described are exemplary in nature, and other materials and structures may be used. Functional OLEDs may be achieved by combining the various layers described in different ways, or layers may be omitted entirely, based on design, performance, and cost factors. Other layers not specifically described may also be included. Materials other than those specifically described may be used. Although many of the examples provided herein describe various layers as comprising a single material, it is understood that combinations of materials, such as a mixture of host and dopant, or more generally a mixture, may be used. Also, the layers may have various sublayers. The names given to the various layers herein are not intended to be strictly limiting. For example, in device200, hole transport layer225transports holes and injects holes into emissive layer220, and may be described as a hole transport layer or a hole injection layer. In one embodiment, an OLED may be described as having an “organic layer” disposed between a cathode and an anode. This organic layer may comprise a single layer, or may further comprise multiple layers of different organic materials as described, for example, with respect toFIGS.1and2. Structures and materials not specifically described may also be used, such as OLEDs comprised of polymeric materials (PLEDs) such as disclosed in U.S. Pat. No. 5,247,190 to Friend et al., which is incorporated by reference in its entirety. By way of further example, OLEDs having a single organic layer may be used. OLEDs may be stacked, for example as described in U.S. Pat. No. 5,707,745 to Forrest et al, which is incorporated by reference in its entirety. The OLED structure may deviate from the simple layered structure illustrated inFIGS.1and2. For example, the substrate may include an angled reflective surface to improve out-coupling, such as a mesa structure as described in U.S. Pat. No. 6,091,195 to Forrest et al., and/or a pit structure as described in U.S. Pat. No. 5,834,893 to Bulovic et al., which are incorporated by reference in their entireties. Unless otherwise specified, any of the layers of the various embodiments may be deposited by any suitable method. For the organic layers, preferred methods include thermal evaporation, ink-jet, such as described in U.S. Pat. Nos. 6,013,982 and 6,087,196, which are incorporated by reference in their entireties, organic vapor phase deposition (OVPD), such as described in U.S. Pat. No. 6,337,102 to Forrest et al., which is incorporated by reference in its entirety, and deposition by organic vapor jet printing (OVJP), such as described in U.S. Pat. No. 7,431,968, which is incorporated by reference in its entirety. Other suitable deposition methods include spin coating and other solution based processes. Solution based processes are preferably carried out in nitrogen or an inert atmosphere. For the other layers, preferred methods include thermal evaporation. Preferred patterning methods include deposition through a mask, cold welding such as described in U.S. Pat. Nos. 6,294,398 and 6,468,819, which are incorporated by reference in their entireties, and patterning associated with some of the deposition methods such as ink-jet and OVJD. Other methods may also be used. The materials to be deposited may be modified to make them compatible with a particular deposition method. For example, substituents such as alkyl and aryl groups, branched or unbranched, and preferably containing at least 3 carbons, may be used in small molecules to enhance their ability to undergo solution processing. Substituents having 20 carbons or more may be used, and 3-20 carbons is a preferred range. Materials with asymmetric structures may have better solution processibility than those having symmetric structures, because asymmetric materials may have a lower tendency to recrystallize. Dendrimer substituents may be used to enhance the ability of small molecules to undergo solution processing. Devices fabricated in accordance with embodiments of the present invention may further optionally comprise a barrier layer. One purpose of the barrier layer is to protect the electrodes and organic layers from damaging exposure to harmful species in the environment including moisture, vapor and/or gases, etc. The barrier layer may be deposited over, under or next to a substrate, an electrode, or over any other parts of a device including an edge. The barrier layer may comprise a single layer, or multiple layers. The barrier layer may be formed by various known chemical vapor deposition techniques and may include compositions having a single phase as well as compositions having multiple phases. Any suitable material or combination of materials may be used for the barrier layer. The barrier layer may incorporate an inorganic or an organic compound or both. The preferred barrier layer comprises a mixture of a polymeric material and a non-polymeric material as described in U.S. Pat. No. 7,968,146, PCT Pat. Application Nos. PCT/US2007/023098 and PCT/US2009/042829, which are herein incorporated by reference in their entireties. To be considered a “mixture”, the aforesaid polymeric and non-polymeric materials comprising the barrier layer should be deposited under the same reaction conditions and/or at the same time. The weight ratio of polymeric to non-polymeric material may be in the range of 95:5 to 5:95. The polymeric material and the non-polymeric material may be created from the same precursor material. In one example, the mixture of a polymeric material and a non-polymeric material consists essentially of polymeric silicon and inorganic silicon. Devices fabricated in accordance with embodiments of the invention can be incorporated into a wide variety of electronic component modules (or units) that can be incorporated into a variety of electronic products or intermediate components. Examples of such electronic products or intermediate components include display screens, lighting devices such as discrete light source devices or lighting panels, etc. that can be utilized by the end-user product manufacturers. Such electronic component modules can optionally include the driving electronics and/or power source(s). Devices fabricated in accordance with embodiments of the invention can be incorporated into a wide variety of consumer products that have one or more of the electronic component modules (or units) incorporated therein. Such consumer products would include any kind of products that include one or more light source(s) and/or one or more of some type of visual displays. Some examples of such consumer products include flat panel displays, computer monitors, medical monitors, televisions, billboards, lights for interior or exterior illumination and/or signaling, heads-up displays, fully or partially transparent displays, flexible displays, laser printers, telephones, cell phones, tablets, phablets, personal digital assistants (PDAs), laptop computers, digital cameras, camcorders, viewfinders, micro-displays, 3-D displays, vehicles, a large area wall, theater or stadium screen, or a sign. Various control mechanisms may be used to control devices fabricated in accordance with the present invention, including passive matrix and active matrix. Many of the devices are intended for use in a temperature range comfortable to humans, such as 18 degrees C. to 30 degrees C., and more preferably at room temperature (20-25 degrees C.), but could be used outside this temperature range, for example, from −40 degree C. to +80 degree C. The materials and structures described herein may have applications in devices other than OLEDs. For example, other optoelectronic devices such as organic solar cells and organic photodetectors may employ the materials and structures. More generally, organic devices, such as organic transistors, may employ the materials and structures. The term “halo,” “halogen,” or “halide” as used herein includes fluorine, chlorine, bromine, and iodine. The term “alkyl” as used herein contemplates both straight and branched chain alkyl radicals. Preferred alkyl groups are those containing from one to fifteen carbon atoms and includes methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl, and the like. Additionally, the alkyl group may be optionally substituted. The term “cycloalkyl” as used herein contemplates cyclic alkyl radicals. Preferred cycloalkyl groups are those containing 3 to 7 carbon atoms and includes cyclopropyl, cyclopentyl, cyclohexyl, and the like. Additionally, the cycloalkyl group may be optionally substituted. The term “alkenyl” as used herein contemplates both straight and branched chain alkene radicals. Preferred alkenyl groups are those containing two to fifteen carbon atoms. Additionally, the alkenyl group may be optionally substituted. The term “alkynyl” as used herein contemplates both straight and branched chain alkyne radicals. Preferred alkynyl groups are those containing two to fifteen carbon atoms. Additionally, the alkynyl group may be optionally substituted. The terms “aralkyl” or “arylalkyl” as used herein are used interchangeably and contemplate an alkyl group that has as a substituent an aromatic group. Additionally, the aralkyl group may be optionally substituted. The term “heterocyclic group” as used herein contemplates aromatic and non-aromatic cyclic radicals. Hetero-aromatic cyclic radicals also means heteroaryl. Preferred hetero-non-aromatic cyclic groups are those containing 3 or 7 ring atoms which includes at least one hetero atom, and includes cyclic amines such as morpholino, piperdino, pyrrolidino, and the like, and cyclic ethers, such as tetrahydrofuran, tetrahydropyran, and the like. Additionally, the heterocyclic group may be optionally substituted. The term “aryl” or “aromatic group” as used herein contemplates single-ring groups and polycyclic ring systems. The polycyclic rings may have two or more rings in which two carbons are common to two adjoining rings (the rings are “fused”) wherein at least one of the rings is aromatic, e.g., the other rings can be cycloalkyls, cycloalkenyls, aryl, heterocycles, and/or heteroaryls. Additionally, the aryl group may be optionally substituted. The term “heteroaryl” as used herein contemplates single-ring hetero-aromatic groups that may include from one to three heteroatoms, for example, pyrrole, furan, thiophene, imidazole, oxazole, thiazole, triazole, pyrazole, pyridine, pyrazine and pyrimidine, and the like. The term heteroaryl also includes polycyclic hetero-aromatic systems having two or more rings in which two atoms are common to two adjoining rings (the rings are “fused”) wherein at least one of the rings is a heteroaryl, e.g., the other rings can be cycloalkyls, cycloalkenyls, aryl, heterocycles, and/or heteroaryls. Additionally, the heteroaryl group may be optionally substituted. The alkyl, cycloalkyl, alkenyl, alkynyl, aralkyl, heterocyclic group, aryl, and heteroaryl may be optionally substituted with one or more substituents selected from the group consisting of hydrogen, deuterium, halogen, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, cyclic amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acid, ether, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof. As used herein, “substituted” indicates that a substituent other than H is bonded to the relevant position, such as carbon. Thus, for example, where R1is mono-substituted, then one R1must be other than H. Similarly, where R1is di-substituted, then two of R1must be other than H. Similarly, where R1is unsubstituted, R1is hydrogen for all available positions. The “aza” designation in the fragments described herein, i.e. aza-dibenzofuran, aza-dibenzothiophene, etc. means that one or more of the C—H groups in the respective fragment can be replaced by a nitrogen atom, for example, and without any limitation, azatriphenylene encompasses both dibenzo[fh]quinoxaline and dibenzo[fh]quinoline. One of ordinary skill in the art can readily envision other nitrogen analogs of the aza-derivatives described above, and all such analogs are intended to be encompassed by the terms as set forth herein. It is to be understood that when a molecular fragment is described as being a substituent or otherwise attached to another moiety, its name may be written as if it were a fragment (e.g. phenyl, phenylene, naphthyl, dibenzofuryl) or as if it were the whole molecule (e.g. benzene, naphthalene, dibenzofuran). As used herein, these different ways of designating a substituent or attached fragment are considered to be equivalent. Tetradentate platinum complexes can be used as emitters in phosphorescent OLEDs. These complexes have a single ligand that has four coordination sites, enabling versatile materials design. The known tetradentate platinum complexes such as tetradentate platinum complex coordinating to a ligand with two neutral nitrogen donors, one anionic carbon donor and one anionic oxygen donor (Advanced Functional Materials, 2013, 23, 5168 and Chemistry a European Journal, 2013, 19, 69) have shown high PLQY and high EQE in OLED devices. However, because of the conjugation and low triplet energy of the ligands, only green and longer wavelength emission can be achieved. In the present disclosure, the inventors have formulated tetradentate platinum complexes with high triplet energy ligands. These novel complexes comprise a Pt—O bond. According to an aspect of the present disclosure, a compound having a Pt tetradentate structure having the formula: Formula I, is disclosed. In Formula I, rings A, B, C, and D each independently represent a 5-membered or 6-membered carbocyclic or heterocyclic ring; wherein RA, RB, RC, and RDeach independently represent mono, di, tri, or tetra-substitution, or no substitution; wherein L1, L2, and L3are each independently selected from the group consisting of a direct bond, BR, NR, PR, O, S, Se, C═O, S═O, SO2, CRR′, SiRR′, GeRR′, and combinations thereof, wherein when n is 1, L4is selected from the group consisting of a direct bond, BR, NR, PR, O, S, Se, C═O, S═O, SO2, CRR′, SiRR′, GeRR′, and combinations thereof, when n is 0, L4is not present; wherein RA, RB, RC, RD, R, and R′ are each independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof, wherein any adjacent RA, RB, RC, RD, R, and R′ are optionally joined to form a ring; wherein X1, X2, X3, and X4each independently selected from the group consisting of carbon and nitrogen; wherein one of Q1, Q2, Q3, and Q4is oxygen, the remaining three of Q1, Q2, Q3, and Q4each represents a direct bond so that Pt directly bonds to three of X1, X2, X3, and X4; and wherein when L1, L2, L3, or L4represents a direct bond, the direct bond is not a C—C bond. In one embodiment of the compound, wherein two of X1, X2, X3, and X4that directly bond to Pt are carbon thus forming Pt—C bonds, and one of X1, X2, X3, and X4that directly bond to Pt is nitrogen. In another embodiment, wherein the two Pt—C bonds are in cis configuration. In one embodiment of the compound, L1, L2, and L3are each independently selected from the group consisting of a direct bond, NR, O, CRR′, SiRR′, and combinations thereof, and wherein when n is 1, L4is selected from the group consisting of a direct bond, NR, O, CRR′, SiRR′, and combinations thereof. In another embodiment of the compound, R and R′ are each independently selected from the group consisting of hydrogen, deuterium, methyl, ethyl, propyl, 1-methylethyl, butyl, 1-methylpropyl, 2-methylpropyl, pentyl, 1-methylbutyl, 2-methylbutyl, 3-methylbutyl, 1,1-dimethylpropyl, 1,2-dimethylpropyl, 2,2-dimethylpropyl, cyclopentyl, cyclohexyl, phenyl, and combinations thereof. In one embodiment, the compound has a neutral charge. In one embodiment, the compound has at least one Pt-carbene bond. In one embodiment of the compound, n is 0. In another embodiment of the compound, n is 1. In one embodiment of the compound, one of the rings A, B, C, and D is phenyl when said ring is bonded to one of the Q1, Q2, Q3, and Q4that is oxygen. In one embodiment of the compound, the rings A, B, C, and D are each independently selected from the group consisting of phenyl, pyridine, and imidazole. In one embodiment of the compound, when L1, L2, L3, or L4represents a direct bond, the direct bond is a C—N bond. In one embodiment of the compound, at least one of L1, L2, L3, and L4is not a direct bond. In another embodiment of the compound, the compound is selected from the group consisting of: In another embodiment of the compound, the compound is selected from the group consisting of: According to another aspect of the present disclosure, a device comprising one or more organic light emitting devices incorporating the compound disclosed herein is proviced. At least one of the one or more organic light emitting devices comprise: an anode; a cathode; and an organic layer, disposed between the anode and the cathode, comprising a compound having a Pt tetradentate structure, having the formula: wherein rings A, B, C, and D each independently represent a 5-membered or 6-membered carbocyclic or heterocyclic ring; wherein RA, RB, RC, and RDeach independently represent mono, di, tri, or tetra-substitution, or no substitution; wherein L1, L2, and L3are each independently selected from the group consisting of a direct bond, BR, NR, PR, O, S, Se, C═O, S═O, SO2, CRR′, SiRR′, GeRR′, and combinations thereof, wherein when n is 1, L4is selected from the group consisting of a direct bond, BR, NR, PR,0, S, Se, C═O, S═O, SO2, CRR′, SiRR′, GeRR′, and combinations thereof, when n is 0, L4is not present; wherein RA, RB, RC, RD, R, and R′ are each independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof, wherein any adjacent RA, RB, RC, RD, R, and R′ are optionally joined to form a ring; wherein X1, X2, X3, and X4are each independently selected from the group consisting of carbon and nitrogen; wherein one of Q1, Q2, Q3, and Q4is oxygen, the remaining three of Q1, Q2, Q3, and Q4each represent a direct bond so that Pt directly bonds to three of X1, X2, X3, and X4; and wherein when L1, L2, L3, or L4represents a direct bond, the direct bond is not a C—C bond. In one embodiment of the device, the device is selected from the group consisting of a consumer product, an electronic component module, an organic light-emitting device, and a lighting panel. In another embodiment of the device, the organic layer is an emissive layer and the compound is an emissive dopant or a non-emissive dopant. In another embodiment of the device, the organic layer further comprises a host, wherein the host comprises a triphenylene containing benzo-fused thiophene or benzo-fused furan; wherein any substituent in the host is an unfused substituent independently selected from the group consisting of CmH2m+1, OCmH2m+1, OAr1, N(CmH2m+1)2, N(Ar1)(Ar2), CH═CH—CmH2m+1, C≡CCmH2m+1, Ar1, Ar1—Ar2, CmH2m—Ar1, or no substitution; wherein m is from 1 to 10; and wherein Ar1and Ar2are independently selected from the group consisting of benzene, biphenyl, naphthalene, triphenylene, carbazole, and heteroaromatic analogs thereof. In some embodiments of the device, the organic layer further comprises a host, wherein the host comprises at least one chemical group selected from the group consisting of triphenylene, carbazole, dibenzothiphene, dibenzofuran, dibenzoselenophene, azatriphenylene, azacarbazole, aza-dibenzothiophene, aza-dibenzofuran, and aza-dibenzoselenophene. In one embodiment of the device, the host is selected from the group consisting of: and combinations thereof. In one embodiment of the device, the host comprises a metal complex. According to another aspect of the present disclosure, a formulation comprising a compound having a Pt tetradentate structure, having Formula I as described herein including all variations thereof is disclosed. According to another aspect of the present disclosure, a novel method for forming a metal-carbene bond is disclosed. The method is exemplified by the following scheme for synthesis of Compound 99: A 35 ml microwave reaction vessel was charged with a ligand (1 g, 1.367 mmol); K2PtCl4(0.567 g, 1.367 mmol); sodium acetate (1.121 g, 13.67 mmol) and acetic acid (20 ml) forming a reaction mixture. The reaction mixture was heated in a microwave reactor (CEM brand; discovery model) to 160° C. for 10.5 hours. The reaction mixture was neutralized with aqueous ammonium and extracted by dichloromethane. The organic portion was combined and evaporated to dryness. The residue was subjected to column chromatography (SiO2, Et3N pretreated, 100% dichloromethane) to yield the desired product (0.7 g, 79%). The method comprises: mixing a metal precursor with a carbene salt, a weak base salt, and a solvent to form a reaction mixture; and heating the reaction mixture, wherein the weak base salt has pKa greater than 4. N-heterocyclic carbenes (NHC) are one of the most promising new classes of ligands in the design of transition metal complexes. The general synthetic procedure is to carry out the deprotection of an imidazole salt followed by coordination of the resulting free carbene to the metal. However; this method usually requires cryogenic condition due to the short shelf life of the free carbene in ambient temperature. In this disclosure; we develop a methodology in which free carbene is not involved in the process. Therefore, cryogenic condition is not necessary and conventional heating process can be applied. This novel methodology shall be more practical in industrial setting environment. Furthermore, conventional carbene ligation is generally carried out in a basic or neutral condition due to high sensitivity of the free carbene toward acid. In the novel method of the present disclosure, since the free carbene is not involved in the process, the choice of the solvent is not restricted to a basic or neutral solvent. In fact, solvents with weak acidity can be used in the present method. In one embodiment of the method, the metal precursor is a second or third row transition metal. In one embodiment, the metal precursor is selected from the group consisting of Ir, Rh, Re, Ru, Os, Pt, and Pd. In another embodiment, the metal precursor is a halide salt. In another embodiment, the metal precursor is selected from the group consisting of K2PtCl4, Na2PtCl4, PtCl2, PtCl2(DMSO)2, Pt(COD)Cl2, IrCl3·xH2O, Na2IrCl6·xH2O, (NH4)2IrCl6, K3IrCl6·xH2O, Na2IrBr6, [(COD)IrCl]2, OsCl3xH2O, (NH4)2OsCl6, Na2OsCl6, and OsCl2(DMSO)2. In one embodiment of the method, the carbene salt is a carbon carbene salt. In another embodiment, the carbene salt is a N-heterocyclic carbene salt. In some embodiments, the carbene salt comprises a tetradentate ligand. In another embodiment, the carbene salt is a carbene halide salt. In one embodiment of the method, the weak base salt is selected from the group consisting of: sodium acetate, potassium acetate, sodium butyrate, potassium butyrate, sodium propionate, and potassium propionate. In one embodiment of the method, the solvent is the corresponding weak acid of the weak base salt. In some embodiments, the solvent is selected from the group consisting of acetic acid, propanoic acid, pivalic acid, and butyric acid. In one embodiment of the method, the heating step is carried out in a microwave reactor. In some embodiments of the method, the reaction mixture has a free carbene concentration of less than 10% of the carbene salt concentration. In one embodiment, the reaction mixture has a free carbene concentration of less than 1% of the carbene salt concentration. In one embodiment, the reaction mixture has a free carbene concentration of less than 0.1% of the carbene salt concentration. In some embodiments of the method, the method produces a metal-carbene complex having a yield of at least 50%. In one embodiment, the method produces a metal-carbene complex having a yield of at least 70%. In yet another aspect of the present disclosure, a formulation comprising a compound of Formula I as defined herein including all of their variations, is provided. The formulation can include one or more components selected from the group consisting of a solvent, a host, a hole injection material, hole transport material, and an electron transport layer material, disclosed herein. Combination with Other Materials The materials described herein as useful for a particular layer in an organic light emitting device may be used in combination with a wide variety of other materials present in the device. For example, emissive dopants disclosed herein may be used in conjunction with a wide variety of hosts, transport layers, blocking layers, injection layers, electrodes and other layers that may be present. The materials described or referred to below are non-limiting examples of materials that may be useful in combination with the compounds disclosed herein, and one of skill in the art can readily consult the literature to identify other materials that may be useful in combination. HIL/HTL: A hole injecting/transporting material to be used in the present invention is not particularly limited, and any compound may be used as long as the compound is typically used as a hole injecting/transporting material. Examples of the material include, but are not limited to: a phthalocyanine or porphyrin derivative; an aromatic amine derivative; an indolocarbazole derivative; a polymer containing fluorohydrocarbon; a polymer with conductivity dopants; a conducting polymer, such as PEDOT/PSS; a self-assembly monomer derived from compounds such as phosphonic acid and silane derivatives; a metal oxide derivative, such as MoOx; a p-type semiconducting organic compound, such as 1,4,5,8,9,12-Hexaazatriphenylenehexacarbonitrile; a metal complex, and a cross-linkable compound. Examples of aromatic amine derivatives used in HIL or HTL include, but are not limited to the following general structures: Each of Ar1to Ar9is selected from the group consisting of aromatic hydrocarbon cyclic compounds such as benzene, biphenyl, triphenyl, triphenylene, naphthalene, anthracene, phenalene, phenanthrene, fluorene, pyrene, chrysene, perylene, and azulene; the group consisting of aromatic heterocyclic compounds such as dibenzothiophene, dibenzofuran, dibenzoselenophene, furan, thiophene, benzofuran, benzothiophene, benzoselenophene, carbazole, indolocarbazole, pyridylindole, pyrrolodipyridine, pyrazole, imidazole, triazole, oxazole, thiazole, oxadiazole, oxatriazole, dioxazole, thiadiazole, pyridine, pyridazine, pyrimidine, pyrazine, triazine, oxazine, oxathiazine, oxadiazine, indole, benzimidazole, indazole, indoxazine, benzoxazole, benzisoxazole, benzothiazole, quinoline, isoquinoline, cinnoline, quinazoline, quinoxaline, naphthyridine, phthalazine, pteridine, xanthene, acridine, phenazine, phenothiazine, phenoxazine, benzofuropyridine, furodipyridine, benzothienopyridine, thienodipyridine, benzoselenophenopyridine, and selenophenodipyridine; and the group consisting of 2 to 10 cyclic structural units which are groups of the same type or different types selected from the aromatic hydrocarbon cyclic group and the aromatic heterocyclic group and are bonded to each other directly or via at least one of oxygen atom, nitrogen atom, sulfur atom, silicon atom, phosphorus atom, boron atom, chain structural unit and the aliphatic cyclic group. Wherein each Ar is further substituted by a substituent selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof. In one aspect, Ar1to Ar9is independently selected from the group consisting of wherein k is an integer from 1 to 20; X101to X108is C (including CH) or N; Z101is NAr1, O, or S; Ar1has the same group defined above. Examples of metal complexes used in HIL or HTL include, but are not limited to the following general formula: wherein Met is a metal, which can have an atomic weight greater than 40; (Y101-Y102) is a bidentate ligand, Y101and y102are independently selected from C, N, O, P, and S; L101is an ancillary ligand; k′ is an integer value from 1 to the maximum number of ligands that may be attached to the metal; and k′+k″ is the maximum number of ligands that may be attached to the metal. In one aspect, (Y101-Y102) is a 2-phenylpyridine derivative. In another aspect, (Y101-Y102) is a carbene ligand. In another aspect, Met is selected from Ir, Pt, Os, and Zn. In a further aspect, the metal complex has a smallest oxidation potential in solution vs. Fc+/Fc couple less than about 0.6 V. Host: The light emitting layer of the organic EL device of the present invention preferably contains at least a metal complex as light emitting material, and may contain a host material using the metal complex as a dopant material. Examples of the host material are not particularly limited, and any metal complexes or organic compounds may be used as long as the triplet energy of the host is larger than that of the dopant. While the Table below categorizes host materials as preferred for devices that emit various colors, any host material may be used with any dopant so long as the triplet criteria is satisfied. Examples of metal complexes used as host are preferred to have the following general formula: wherein Met is a metal; (Y103-Y104) is a bidentate ligand, Y103and Y104are independently selected from C, N, O, P, and S; L101is an another ligand; k′ is an integer value from 1 to the maximum number of ligands that may be attached to the metal; and k′+k″ is the maximum number of ligands that may be attached to the metal. In one aspect, the metal complexes are: wherein (O—N) is a bidentate ligand, having metal coordinated to atoms O and N. In another aspect, Met is selected from Ir and Pt. In a further aspect, (Y103-Y104) is a carbene ligand. Examples of organic compounds used as host are selected from the group consisting of aromatic hydrocarbon cyclic compounds such as benzene, biphenyl, triphenyl, triphenylene, naphthalene, anthracene, phenalene, phenanthrene, fluorene, pyrene, chrysene, perylene, and azulene; the group consisting of aromatic heterocyclic compounds such as dibenzothiophene, dibenzofuran, dibenzoselenophene, furan, thiophene, benzofuran, benzothiophene, benzoselenophene, carbazole, indolocarbazole, pyridylindole, pyrrolodipyridine, pyrazole, imidazole, triazole, oxazole, thiazole, oxadiazole, oxatriazole, dioxazole, thiadiazole, pyridine, pyridazine, pyrimidine, pyrazine, triazine, oxazine, oxathiazine, oxadiazine, indole, benzimidazole, indazole, indoxazine, benzoxazole, benzisoxazole, benzothiazole, quinoline, isoquinoline, cinnoline, quinazoline, quinoxaline, naphthyridine, phthalazine, pteridine, xanthene, acridine, phenazine, phenothiazine, phenoxazine, benzofuropyridine, furodipyridine, benzothienopyridine, thienodipyridine, benzoselenophenopyridine, and selenophenodipyridine; and the group consisting of 2 to 10 cyclic structural units which are groups of the same type or different types selected from the aromatic hydrocarbon cyclic group and the aromatic heterocyclic group and are bonded to each other directly or via at least one of oxygen atom, nitrogen atom, sulfur atom, silicon atom, phosphorus atom, boron atom, chain structural unit and the aliphatic cyclic group. Wherein each group is further substituted by a substituent selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof. In one aspect, the host compound contains at least one of the following groups in the molecule: wherein R101to R107is independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof, when it is aryl or heteroaryl, it has the similar definition as Ar's mentioned above. k is an integer from 0 to 20 or 1 to 20; k′″ is an integer from 0 to 20. X101to X108is selected from C (including CH) or N. Z101and Z102is selected from NR101, O, or S. HBL: A hole blocking layer (HBL) may be used to reduce the number of holes and/or excitons that leave the emissive layer. The presence of such a blocking layer in a device may result in substantially higher efficiencies as compared to a similar device lacking a blocking layer. Also, a blocking layer may be used to confine emission to a desired region of an OLED. In one aspect, compound used in HBL contains the same molecule or the same functional groups used as host described above. In another aspect, compound used in HBL contains at least one of the following groups in the molecule: wherein k is an integer from 1 to 20; L101is an another ligand, k′ is an integer from 1 to 3. ETL: Electron transport layer (ETL) may include a material capable of transporting electrons. Electron transport layer may be intrinsic (undoped), or doped. Doping may be used to enhance conductivity. Examples of the ETL material are not particularly limited, and any metal complexes or organic compounds may be used as long as they are typically used to transport electrons. In one aspect, compound used in ETL contains at least one of the following groups in the molecule: wherein R101is selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof, when it is aryl or heteroaryl, it has the similar definition as Ar's mentioned above. Ar1to Ar3has the similar definition as Ar's mentioned above. k is an integer from 1 to 20. X101to X108is selected from C (including CH) or N. In another aspect, the metal complexes used in ETL include, but are not limited to the following general formula: wherein (O—N) or (N—N) is a bidentate ligand, having metal coordinated to atoms O, N or N, N; L101is another ligand; k′ is an integer value from 1 to the maximum number of ligands that may be attached to the metal. In any above-mentioned compounds used in each layer of the OLED device, the hydrogen atoms can be partially or fully deuterated. Thus, any specifically listed substituent, such as, without limitation, methyl, phenyl, pyridyl, etc. encompasses undeuterated, partially deuterated, and fully deuterated versions thereof. Similarly, classes of substituents such as, without limitation, alkyl, aryl, cycloalkyl, heteroaryl, etc. also encompass undeuterated, partially deuterated, and fully deuterated versions thereof. In addition to and/or in combination with the materials disclosed herein, many hole injection materials, hole transporting materials, host materials, dopant materials, exiton/hole blocking layer materials, electron transporting and electron injecting materials may be used in an OLED. Non-limiting examples of the materials that may be used in an OLED in combination with materials disclosed herein are listed in Table A below. Table A lists non-limiting classes of materials, non-limiting examples of compounds for each class, and references that disclose the materials. TABLE AMATERIALEXAMPLES OF MATERIALPUBLICATIONSHole injection materialsPhthalocyanine and porphyrin compoundsAppl. Phys. Lett. 69, 2160 (1996)Starburst triarylaminesJ. Lumin. 72-74, 985 (1997)CFxFluorohydrocarbon polymerAppl. Phys. Lett. 78, 673 (2001)Conducting polymers (e.g., PEDOT:PSS, polyaniline, polythiophene)Synth. Met. 87, 171 (1997) WO2007002683Phosphonic acid and silane SAMsUS20030162053Triarylamine or polythiophene polymers with conductivity dopantsEP1725079A1andOrganic compounds with conductive inorganic compounds, such as molybdenum and tungsten oxidesUS20050123751 SID Symposium Digest, 37, 923 (2006) WO2009018009n-type semiconducting organic complexesUS20020158242Metal organometallic complexesUS20060240279Cross-linkable compoundsUS20080220265Polythiophene based polymers and copolymersWO 2011075644 EP2350216Hole transporting materialsTriarylamines (e.g., TPD, □-NPD)Appl. Phys. Lett. 51, 913 (1987)U.S. Pat. No. 5,061,569EP650955J. Mater. Chem. 3, 319 (1993)Appl. Phys. Lett. 90, 183503 (2007)Appl. Phys. Lett. 90, 183503 (2007)Triarylamine on spirofluorene coreSynth. Met. 91, 209 (1997)Arylamine carbazole compoundsAdv. Mater. 6, 677 (1994), US20080124572Triarylamine with (di)benzothiophene/(di)benzo furanUS20070278938, US20080106190 US20110163302IndolocarbazolesSynth. Met. 111, 421 (2000)Isoindole compoundsChem. Mater. 15, 3148 (2003)Metal carbene complexesUS20080018221Phosphorescent OLED host materialsRed hostsArylcarbazolesAppl. Phys. Lett. 78, 1622 (2001)Metal 8-hydroxyquinolates (e.g., Alq3, BAlq)Nature 395, 151 (1998)US20060202194WO2005014551WO2006072002Metal phenoxybenzothiazole compoundsAppl. Phys. Lett. 90, 123509 (2007)Conjugated oligomers and polymers (e.g., polyfluorene)Org. Electron. 1, 15 (2000)Aromatic fused ringsWO2009066779, WO2009066778, WO2009063833, US20090045731, US20090045730, WO2009008311, US20090008605, US20090009065Zinc complexesWO2010056066Chrysene based compoundsWO2011086863Green hostsArylcarbazolesAppl. Phys. Lett. 78, 1622 (2001)US20030175553WO2001039234Aryltriphenylene compoundsUS20060280965US20060280965WO2009021126Poly-fused heteroaryl compoundsUS20090309488 US20090302743 US20100012931Donor acceptor type moleculesWO2008056746WO2010107244Aza-carbazole/DBT/DBFJP2008074939US20100187984Polymers (e.g., PVK)Appl. Phys. Lett. 77, 2280 (2000)Spirofluorene compoundsWO2004093207Metal phenoxybenzooxazole compoundsWO2005089025WO2006132173JP200511610Spirofluorene-carbazole compoundsJP2007254297JP2007254297IndolocarbazolesWO2007063796WO20070637545-member ring electron deficient heterocycles (e.g., triazole, oxadiazole)J. Appl. Phys. 90, 5048 (2001)WO2004107822Tetraphenylene complexesUS20050112407Metal phenoxypyridine compoundsWO2005030900Metal coordination complexes (e.g., Zn, Al with N{circumflex over ( )}N ligands)US20040137268, US20040137267Blue hostsArylcarbazolesAppl. Phys. Lett, 82, 2422 (2003)US20070190359Dibenzothiophene/ Dibenzofuran- carbazole compoundsWO2006114966, US20090167162US20090167162WO2009086028US20090030202, US20090017330US20100084966Silicon aryl compoundsUS20050238919WO2009003898Silicon/Germanium aryl compoundsEP2034538AAryl benzoyl esterWO2006100298Carbazole linked by non- conjugated groupsUS20040115476Aza-carbazolesUS20060121308High triplet metal organometallic complexU.S. Pat. No. 7,154,114Phosphorescent dopantsRed dopantsHeavy metal porphyrins (e.g., PtOEP)Nature 395, 151 (1998)Iridium(III) organometallic complexesAppl. Phys. Lett. 78, 1622 (2001)US20030072964US20030072964US20060202194US20060202194US20070087321US20080261076 US20100090591US20070087321Adv. Mater. 19, 739 (2007)WO2009100991WO2008101842U.S. Pat. No. 7,232,618Platinum(II) organometallic complexesWO2003040257US20070103060Osmium(III) complexesChem. Mater. 17, 3532 (2005)Ruthenium(II) complexesAdv. Mater. 17, 1059 (2005)Rhenium (I), (II), and (III) complexesUS20050244673Green dopantsIridium(III) organometallic complexesInorg. Chem. 40, 1704 (2001)and its derivativesUS20020034656U.S. Pat. No. 7,332,232US20090108737WO2010028151EP1841834BUS20060127696US20090039776U.S. Pat. No. 6,921,915US20100244004U.S. Pat. No. 6,687,266Chem. Mater. 16, 2480 (2004)US20070190359US 20060008670 JP2007123392WO2010086089, WO2011044988Adv. Mater. 16, 2003 (2004)Angew. Chem. Int. Ed. 2006, 45, 7800WO2009050290US20090165846US20080015355US20010015432US20100295032Monomer for polymeric metal organometallic compoundsU.S. Pat. No. 7,250,226, U.S. Pat. No. 7,396,598Pt(II) organometallic complexes, including polydentated ligandsAppl. Phys. Lett. 86, 153505 (2005)Appl. Phys. Lett. 86, 153505 (2005)Chem. Lett. 34, 592 (2005)WO2002015645US20060263635US20060182992 US20070103060Cu complexesWO2009000673US20070111026Gold complexesChem. Commun. 2906 (2005)Rhenium(III) complexesInorg. Chem. 42, 1248 (2003)Osmium(II) complexesU.S. Pat. No. 7,279,704Deuterated organometallic complexesUS20030138657Organometallic complexes with two or more metal centersUS20030152802U.S. Pat. No. 7,090,928Blue dopantsIridium(III) organometallic complexesWO2002002714WO2006009024US20060251923 US20110057559 US20110204333U.S. Pat. No. 7,393,599, WO2006056418, US20050260441, WO2005019373U.S. Pat. No. 7,534,505WO2011051404U.S. Pat. No. 7,445,855US20070190359, US20080297033 US20100148663U.S. Pat. No. 7,338,722US20020134984Angew. Chem. Int. Ed. 47, 4542 (2008)Chem. Mater. 18, 5119 (2006)Inorg. Chem. 46, 4308 (2007)WO2005123873WO2005123873WO2007004380WO2006082742Osmium(II) complexesU.S. Pat. No. 7,279,704Organometallics 23, 3745 (2004)Gold complexesAppl. Phys. Lett. 74, 1361 (1999)Platinum(II) complexesWO2006098120, WO2006103874Pt tetradentate complexes with at least one metal- carbene bondU.S. Pat. No. 7,655,323Exciton/hole blocking layer materialsBathocuprine compounds (e.g., BCP, BPhen)Appl. Phys. Lett. 75, 4 (1999)Appl. Phys. Lett. 79, 449 (2001)Metal 8-hydroxyquinolates (e.g., BAlq)Appl. Phys. Lett. 81, 162 (2002)5-member ring electron deficient heterocycles such as triazole, oxadiazole, imidazole, benzoimidazoleAppl. Phys. Lett. 81, 162 (2002)Triphenylene compoundsUS20050025993Fluorinated aromatic compoundsAppl. Phys. Lett. 79, 156 (2001)Phenothiazine-S-oxideWO2008132085Silylated five-membered nitrogen, oxygen, sulfur or phosphorus dibenzoheterocyclesWO2010079051Aza-carbazolesUS20060121308Electron transporting materialsAnthracene-benzoimidazole compoundsWO2003060956US20090179554Aza triphenylene derivativesUS20090115316Anthracene-benzothiazole compoundsAppl. Phys. Lett. 89, 063504 (2006)Metal 8-hydroxyquinolates (e.g., Alq3, Zrq4)Appl. Phys. Lett. 51, 913 (1987) U.S. Pat. No. 7,230,107Metal hydroxybenzoquinolatesChem. Lett. 5, 905 (1993)Bathocuprine compounds such as BCP, BPhen, etcAppl. Phys. Lett. 91, 263503 (2007)Appl. Phys. Lett. 79, 449 (2001)5-member ring electron deficient heterocycles (e.g.,triazole, oxadiazole, imidazole, benzoimidazole)Appl. Phys. Lett. 74, 865 (1999)Appl. Phys. Lett. 55, 1489 (1989)Jpn. J. Apply. Phys. 32, L917 (1993)Silole compoundsOrg. Electron. 4, 113 (2003)Arylborane compoundsJ. Am. Chem. Soc. 120, 9714 (1998)Fluorinated aromatic compoundsJ. Am. Chem. Soc. 122, 1832 (2000)Fullerene (e.g., C60)US20090101870Triazine complexesUS20040036077Zn (N{circumflex over ( )}N) complexesU.S. Pat. No. 6,528,187 EXPERIMENTAL Synthesis of Compound 99 Synthesis of 2-methoxy-N-(2-nitrophenyl) aniline A three neck 500 ml round bottom flask was charged with 1-bromo-2-nitrobenzene (10 g, 49.5 mmol); 2-methoxyaniline (5.58 ml, 49.5 mmol); Cs2CO3(47.4 g, 146 mmol); (oxybis(2,1-phenylene))bis(diphenylphosphine) (1.920 g, 3.56 mmol); Pd2dba3(1.088 g, 1.188 mmol), and toluene (250 ml). The reaction mixture was refluxed for 17 hours. The reaction was then filtered through a pad of Celite®. The organic layer was combined and subjected to column chromatography (SiO2, 5% THF in heptane) to yield 2-methoxy-N-(2-nitrophenyl)aniline (11.55 g, 96%). Synthesis of N1-(2-methoxyphenyl)benzene-1,2-diamine A 500 ml hydrogenation bottle was charged with 2-methoxy-N-(2-nitrophenyl)aniline (11.55 g, 47.3 mmol); 10% pd/c (0.75 g) and EtOH (200 ml). The reaction was shaken under 50 psi of H2for 4 hours. The reaction mixture was filtered through a pad of Celite®. The organic portion was subjected to column chromatography (SiO2, 10% THF in heptane) to yield N1-(2-methoxyphenyl)benzene-1,2-diamine (8.67 g, 86%). Synthesis of N1-(2-methoxyphenyl)-N2-(9-(pyridin-2-yl)-9H-carbazol-2-yl)benzene-1,2-diamine A 500 ml three neck round bottom flask was charged with 2-bromo-9-(pyridin-2-yl)-9H-carbazole (10.24 g, 31.7 mmol); N1-(2-methoxyphenyl)benzene-1,2-diamine (6.79 g, 31.7 mmol); Pd2dba3(0.870 g, 0.951 mmol); dicyclohexyl(2′,6′-dimethoxy-[1,1′-biphenyl]-2-yl)phosphine (S-Phos) (1.561 g, 3.80 mmol); sodium t-butoxide (5.12 g, 53.2 mmol) and 150 ml of anhydrous toluene. The reaction was heated to reflux for 17 hours. The reaction mixture was then diluted with saturated ammonium chloride solution and extracted with ethyl acetate. The organic portion was combined and evaporated to dryness. The residue was subjected to column chromatography (SiO2, 20% THF in heptane) to yield N1-(2-methoxyphenyl)-N2-(9-(pyridin-2-yl)-9H-carbazol-2-yl)benzene-1,2-diamine (12.24 g, 85%). Synthesis of 3-(2-methoxyphenyl)-1-(9-(pyridin-2-yl)-9H-carbazol-2-yl)-1H-benzo[d]imidazol-3-ium chloride A 500 ml round bottom flask was charged with N1-(2-methoxyphenyl)-N2-(9-(pyridin-2-yl)-9H-carbazol-2-yl)benzene-1,2-diamine (12.24 g, 26.8 mmol), triethylorthorformate (150 ml); 4 ml of concentrated HCl and 10 drops of formic acid. The reaction was reflux for 6 hours. The reaction mixture was filtered and yield 3-(2-methoxyphenyl)-1-(9-(pyridin-2-yl)-9H-carbazol-2-yl)-1H-benzo[d]imidazol-3-ium chloride. (12 g, 89%). Synthesis of ligand for Compound 99 A 35 ml microwave reactor vessel was charged with 3-(2-methoxyphenyl)-1-(9-(pyridin-2-yl)-9H-carbazol-2-yl)-1H-benzo[d]imidazol-3-ium chloride (3 g, 5.96 mmol) and 12 ml of solution (HBr:HOAC=1:1 by volume). The reaction mixture was subjected to microwave reactor (CEM brand; discovery model) and heated to 140° C. for 1.5 hours. The reaction mixture was filtered and the precipitation was washed with acetone to yield the desired ligand. (3.8 g, 88%). Synthesis of Compound 99 A 35 ml microwave reaction vessel was charged with ligand (1 g, 1.367 mmol), K2PtCl4(0.567 g, 1.367 mmol), sodium acetate (1.121 g, 13.67 mmol), and acetic acid (20 ml). The reaction mixture was subjected to microwave reactor (CEM brand; discovery model) and heated to 160° C. for 10.5 hours. The reaction mixture was neutralized with aqueous ammonium and extracted by dichloromethane. The organic portion was combined and evaporated to dryness. The residue was subjected to column chromatography (SiO2, triethylamine pretreated, 100% dichloromethane) to yield Compound 99 (0.7 g, 79%). Photophysics of Compound 99 FIG.4shows the solution photoluminescence spectrum of Compound 99 in 2-methyl-tetrahydrofuran at room temperature. Compound 99 has a Peak maximum of 502 nm which is suitable for being a green dopant in OLED display. Furthermore, the half width of the peak maximum is only 30 nm; which has an excellent color purity for OLED application. The very narrow linewidth might be attributed to a very rigid ligand structure. In other words, the geometry does not change much between the excited state and ground state. The redox property is listed in the following Table 1 to compare with IrPPY; a standard green emitter for OLEDs. Compound 99 has a shallower HOMO and a deeper LUMO than IrPPY. As a result, Compound 99 has a smaller electrochemical band gap than IrPPY and more saturated green color. In general, a smaller electrochemical band gap can be beneficial for OLEDs since it tends to have better stability toward charges. TABLE 1HOMO/LUMO comparison via Cyclic Voltammetry dataReductionOxidation potentialPotentialGap (ev)T10.2 V−2.33 V2.53502 nmCompound 990.3 V−2.7 V3510 nmIrPPY The reduction potentials are based on values measured from differential pulsed volmammetry and are reported relative to a ferrocence/ferrocenium redox couple used as an internal reference (0.45V vs SCE). The following condition was applied for electrochemical measurement: Anhydrous DMF was used as the solvent under inert atmosphere and 0.1M tetra(n-butyl)ammonium hexafluorophosphate was used as the supporting electrolyte; a glassy carbon rod was used as the working electrode; a platinum wire was used as the counter electrode; and a silver wire was used as the reference electrode. It is understood that the various embodiments described herein are by way of example only, and are not intended to limit the scope of the invention. For example, many of the materials and structures described herein may be substituted with other materials and structures without deviating from the spirit of the invention. The present invention as claimed may therefore include variations from the particular examples and preferred embodiments described herein, as will be apparent to one of skill in the art. It is understood that various theories as to why the invention works are not intended to be limiting. | 54,672 |
11944000 | DETAILED DESCRIPTION Generally, an OLED comprises at least one organic layer disposed between and electrically connected to an anode and a cathode. When a current is applied, the anode injects holes and the cathode injects electrons into the organic layer(s). The injected holes and electrons each migrate toward the oppositely charged electrode. When an electron and hole localize on the same molecule, an “exciton,” which is a localized electron-hole pair having an excited energy state, is formed. Light is emitted when the exciton relaxes via a photoemissive mechanism. In some cases, the exciton may be localized on an excimer or an exciplex. Non-radiative mechanisms, such as thermal relaxation, may also occur, but are generally considered undesirable. The initial OLEDs used emissive molecules that emitted light from their singlet states (“fluorescence”) as disclosed, for example, in U.S. Pat. No. 4,769,292, which is incorporated by reference in its entirety. Fluorescent emission generally occurs in a time frame of less than 10 nanoseconds. More recently, OLEDs having emissive materials that emit light from triplet states (“phosphorescence”) have been demonstrated. Baldo et al., “Highly Efficient Phosphorescent Emission from Organic Electroluminescent Devices,” Nature, vol. 395, 151-154, 1998; (“Baldo-I”) and Baldo et al., “Very high-efficiency green organic light-emitting devices based on electrophosphorescence,” Appl. Phys. Lett., vol. 75, No. 3, 4-6 (1999) (“Baldo-II”), which are incorporated by reference in their entireties. Phosphorescence is described in more detail in U.S. Pat. No. 7,279,704 at cols. 5-6, which are incorporated by reference. FIG.1shows an organic light emitting device100. The figures are not necessarily drawn to scale. Device100may include a substrate110, an anode115, a hole injection layer120, a hole transport layer125, an electron blocking layer130, an emissive layer135, a hole blocking layer140, an electron transport layer145, an electron injection layer150, a protective layer155, a cathode160, and a barrier layer170. Cathode160is a compound cathode having a first conductive layer162and a second conductive layer164. Device100may be fabricated by depositing the layers described, in order. The properties and functions of these various layers, as well as example materials, are described in more detail in U.S. Pat. No. 7,279,704 at cols. 6-10, which are incorporated by reference. More examples for each of these layers are available. For example, a flexible and transparent substrate-anode combination is disclosed in U.S. Pat. No. 5,844,363, which is incorporated by reference in its entirety. An example of a p-doped hole transport layer is m-MTDATA doped with F4-TCNQ at a molar ratio of 50:1, as disclosed in U.S. Patent Application Publication No. 2003/0230980, which is incorporated by reference in its entirety. Examples of emissive and host materials are disclosed in U.S. Pat. No. 6,303,238 to Thompson et al., which is incorporated by reference in its entirety. An example of an n-doped electron transport layer is BPhen doped with Li at a molar ratio of 1:1, as disclosed in U.S. Patent Application Publication No. 2003/0230980, which is incorporated by reference in its entirety. U.S. Pat. Nos. 5,703,436 and 5,707,745, which are incorporated by reference in their entireties, disclose examples of cathodes including compound cathodes having a thin layer of metal such as Mg:Ag with an overlying transparent, electrically-conductive, sputter-deposited ITO layer. The theory and use of blocking layers is described in more detail in U.S. Pat. No. 6,097,147 and U.S. Patent Application Publication No. 2003/0230980, which are incorporated by reference in their entireties. Examples of injection layers are provided in U.S. Patent Application Publication No. 2004/0174116, which is incorporated by reference in its entirety. A description of protective layers may be found in U.S. Patent Application Publication No. 2004/0174116, which is incorporated by reference in its entirety. FIG.2shows an inverted OLED200. The device includes a substrate210, a cathode215, an emissive layer220, a hole transport layer225, and an anode230. Device200may be fabricated by depositing the layers described, in order. Because the most common OLED configuration has a cathode disposed over the anode, and device200has cathode215disposed under anode230, device200may be referred to as an “inverted” OLED. Materials similar to those described with respect to device100may be used in the corresponding layers of device200.FIG.2provides one example of how some layers may be omitted from the structure of device100. The simple layered structure illustrated inFIGS.1and2is provided by way of non-limiting example, and it is understood that embodiments of the invention may be used in connection with a wide variety of other structures. The specific materials and structures described are exemplary in nature, and other materials and structures may be used. Functional OLEDs may be achieved by combining the various layers described in different ways, or layers may be omitted entirely, based on design, performance, and cost factors. Other layers not specifically described may also be included. Materials other than those specifically described may be used. Although many of the examples provided herein describe various layers as comprising a single material, it is understood that combinations of materials, such as a mixture of host and dopant, or more generally a mixture, may be used. Also, the layers may have various sublayers. The names given to the various layers herein are not intended to be strictly limiting. For example, in device200, hole transport layer225transports holes and injects holes into emissive layer220, and may be described as a hole transport layer or a hole injection layer. In one embodiment, an OLED may be described as having an “organic layer” disposed between a cathode and an anode. This organic layer may comprise a single layer, or may further comprise multiple layers of different organic materials as described, for example, with respect toFIGS.1and2. Structures and materials not specifically described may also be used, such as OLEDs comprised of polymeric materials (PLEDs) such as disclosed in U.S. Pat. No. 5,247,190 to Friend et al., which is incorporated by reference in its entirety. By way of further example, OLEDs having a single organic layer may be used. OLEDs may be stacked, for example as described in U.S. Pat. No. 5,707,745 to Forrest et al, which is incorporated by reference in its entirety. The OLED structure may deviate from the simple layered structure illustrated inFIGS.1and2. For example, the substrate may include an angled reflective surface to improve out-coupling, such as a mesa structure as described in U.S. Pat. No. 6,091,195 to Forrest et al., and/or a pit structure as described in U.S. Pat. No. 5,834,893 to Bulovic et al., which are incorporated by reference in their entireties. Unless otherwise specified, any of the layers of the various embodiments may be deposited by any suitable method. For the organic layers, preferred methods include thermal evaporation, ink-jet, such as described in U.S. Pat. Nos. 6,013,982 and 6,087,196, which are incorporated by reference in their entireties, organic vapor phase deposition (OVPD), such as described in U.S. Pat. No. 6,337,102 to Forrest et al., which is incorporated by reference in its entirety, and deposition by organic vapor jet printing (OVJP), such as described in U.S. Pat. No. 7,431,968, which is incorporated by reference in its entirety. Other suitable deposition methods include spin coating and other solution based processes. Solution based processes are preferably carried out in nitrogen or an inert atmosphere. For the other layers, preferred methods include thermal evaporation. Preferred patterning methods include deposition through a mask, cold welding such as described in U.S. Pat. Nos. 6,294,398 and 6,468,819, which are incorporated by reference in their entireties, and patterning associated with some of the deposition methods such as ink-jet and OVJD. Other methods may also be used. The materials to be deposited may be modified to make them compatible with a particular deposition method. For example, substituents such as alkyl and aryl groups, branched or unbranched, and preferably containing at least 3 carbons, may be used in small molecules to enhance their ability to undergo solution processing. Substituents having 20 carbons or more may be used, and 3-20 carbons is a preferred range. Materials with asymmetric structures may have better solution processibility than those having symmetric structures, because asymmetric materials may have a lower tendency to recrystallize. Dendrimer substituents may be used to enhance the ability of small molecules to undergo solution processing. Devices fabricated in accordance with embodiments of the present invention may further optionally comprise a barrier layer. One purpose of the barrier layer is to protect the electrodes and organic layers from damaging exposure to harmful species in the environment including moisture, vapor and/or gases, etc. The barrier layer may be deposited over, under or next to a substrate, an electrode, or over any other parts of a device including an edge. The barrier layer may comprise a single layer, or multiple layers. The barrier layer may be formed by various known chemical vapor deposition techniques and may include compositions having a single phase as well as compositions having multiple phases. Any suitable material or combination of materials may be used for the barrier layer. The barrier layer may incorporate an inorganic or an organic compound or both. The preferred barrier layer comprises a mixture of a polymeric material and a non-polymeric material as described in U.S. Pat. No. 7,968,146, PCT Pat. Application Nos. PCT/US2007/023098 and PCT/US2009/042829, which are herein incorporated by reference in their entireties. To be considered a “mixture”, the aforesaid polymeric and non-polymeric materials comprising the barrier layer should be deposited under the same reaction conditions and/or at the same time. The weight ratio of polymeric to non-polymeric material may be in the range of 95:5 to 5:95. The polymeric material and the non-polymeric material may be created from the same precursor material. In one example, the mixture of a polymeric material and a non-polymeric material consists essentially of polymeric silicon and inorganic silicon. Devices fabricated in accordance with embodiments of the invention can be incorporated into a wide variety of electronic component modules (or units) that can be incorporated into a variety of electronic products or intermediate components. Examples of such electronic products or intermediate components include display screens, lighting devices such as discrete light source devices or lighting panels, etc. that can be utilized by the end-user product manufacturers. Such electronic component modules can optionally include the driving electronics and/or power source(s). Devices fabricated in accordance with embodiments of the invention can be incorporated into a wide variety of consumer products that have one or more of the electronic component modules (or units) incorporated therein. Such consumer products would include any kind of products that include one or more light source(s) and/or one or more of some type of visual displays. Some examples of such consumer products include flat panel displays, computer monitors, medical monitors, televisions, billboards, lights for interior or exterior illumination and/or signaling, heads-up displays, fully or partially transparent displays, flexible displays, laser printers, telephones, cell phones, tablets, phablets, personal digital assistants (PDAs), laptop computers, digital cameras, camcorders, viewfinders, micro-displays, 3-D displays, vehicles, a large area wall, theater or stadium screen, or a sign. Various control mechanisms may be used to control devices fabricated in accordance with the present invention, including passive matrix and active matrix. Many of the devices are intended for use in a temperature range comfortable to humans, such as 18 degrees C. to 30 degrees C., and more preferably at room temperature (20-25 degrees C.), but could be used outside this temperature range, for example, from −40 degree C. to +80 degree C. The materials and structures described herein may have applications in devices other than OLEDs. For example, other optoelectronic devices such as organic solar cells and organic photodetectors may employ the materials and structures. More generally, organic devices, such as organic transistors, may employ the materials and structures. The term “halo” or “halogen” as used herein includes fluorine, chlorine, bromine, and iodine. The term “alkyl” as used herein contemplates both straight and branched chain alkyl radicals. Preferred alkyl groups are those containing from one to fifteen carbon atoms and includes methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl, and the like. Additionally, the alkyl group may be optionally substituted. The term “cycloalkyl” as used herein contemplates cyclic alkyl radicals. Preferred cycloalkyl groups are those containing 3 to 7 carbon atoms and includes cyclopropyl, cyclopentyl, cyclohexyl, and the like. Additionally, the cycloalkyl group may be optionally substituted. The term “alkenyl” as used herein contemplates both straight and branched chain alkene radicals. Preferred alkenyl groups are those containing two to fifteen carbon atoms. Additionally, the alkenyl group may be optionally substituted. The term “alkynyl” as used herein contemplates both straight and branched chain alkyne radicals. Preferred alkynyl groups are those containing two to fifteen carbon atoms. Additionally, the alkynyl group may be optionally substituted. The terms “aralkyl” or “arylalkyl” as used herein are used interchangeably and contemplate an alkyl group that has as a substituent an aromatic group. Additionally, the aralkyl group may be optionally substituted. The term “heterocyclic group” as used herein contemplates aromatic and non-aromatic cyclic radicals. Hetero-aromatic cyclic radicals also means heteroaryl. Preferred hetero-non-aromatic cyclic groups are those containing 3 or 7 ring atoms which includes at least one hetero atom, and includes cyclic amines such as morpholino, piperdino, pyrrolidino, and the like, and cyclic ethers, such as tetrahydrofuran, tetrahydropyran, and the like. Additionally, the heterocyclic group may be optionally substituted. The term “aryl” or “aromatic group” as used herein contemplates single-ring groups and polycyclic ring systems. The polycyclic rings may have two or more rings in which two carbons are common to two adjoining rings (the rings are “fused”) wherein at least one of the rings is aromatic, e.g., the other rings can be cycloalkyls, cycloalkenyls, aryl, heterocycles, and/or heteroaryls. Additionally, the aryl group may be optionally substituted. The term “heteroaryl” as used herein contemplates single-ring hetero-aromatic groups that may include from one to three heteroatoms, for example, pyrrole, furan, thiophene, imidazole, oxazole, thiazole, triazole, pyrazole, pyridine, pyrazine and pyrimidine, and the like. The term heteroaryl also includes polycyclic hetero-aromatic systems having two or more rings in which two atoms are common to two adjoining rings (the rings are “fused”) wherein at least one of the rings is a heteroaryl, e.g., the other rings can be cycloalkyls, cycloalkenyls, aryl, heterocycles, and/or heteroaryls. Additionally, the heteroaryl group may be optionally substituted. The alkyl, cycloalkyl, alkenyl, alkynyl, aralkyl, heterocyclic group, aryl, and heteroaryl may be optionally substituted with one or more substituents selected from the group consisting of hydrogen, deuterium, halogen, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, cyclic amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acid, ether, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof. As used herein, “substituted” indicates that a substituent other than H is bonded to the relevant position, such as carbon. Thus, for example, where R1is mono-substituted, then one R1must be other than H. Similarly, where R1is di-substituted, then two of R1must be other than H. Similarly, where R1is unsubstituted, R1is hydrogen for all available positions. The “aza” designation in the fragments described herein, i.e. aza-dibenzofuran, aza-dibenzothiophene, etc. means that one or more of the C—H groups in the respective fragment can be replaced by a nitrogen atom, for example, and without any limitation, azatriphenylene encompasses both dibenzo[f,h]quinoxaline and dibenzo[f,h]quinoline. One of ordinary skill in the art can readily envision other nitrogen analogs of the aza-derivatives described above, and all such analogs are intended to be encompassed by the terms as set forth herein. It is to be understood that when a molecular fragment is described as being a substituent or otherwise attached to another moiety, its name may be written as if it were a fragment (e.g. phenyl, phenylene, naphthyl, dibenzofuryl) or as if it were the whole molecule (e.g. benzene, naphthalene, dibenzofuran). As used herein, these different ways of designating a substituent or attached fragment are considered to be equivalent. According to an embodiment, a compound having a structure according to Formula I is disclosed,wherein R1, R2, and R3each independently represent mono, di, tri, or tetra substitutions, or no substitution;wherein R1is selected from the group consisting of hydrogen, deuterium, alkyl, cycloalkyl, and combinations thereof;wherein R2and R3are each independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof; and wherein the compound is heteroleptic. In one embodiment, the compound of Formula I, R1is hydrogen or deuterium. In another embodiment, R2and R3are independently selected from the group consisting of hydrogen, deuterium, alkyl, cycloalkyl, and combinations thereof. According to another aspect, the compound of Formula I has a structure according to Formula II: According to another aspect, the compound of Formula I has a structure according to Formula III: In one preferred embodiment, the compound of Formula I is selected from the group consisting of: According to another aspect of the present disclosure, a compound comprising a ligand L, wherein L is selected from the group consisting of: is disclosed;wherein Ra, Rb, Rc, and Rdeach independently represent from mono-substitution to the possible maximum number of substitution, or no substitution;wherein Ra, Rb, Rc, and Rdare each independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof;wherein two adjacent substituents of Ra, Rb, Rc, and Rdare optionally joined to form a ring or form a multidentate ligand;wherein at least one of Ra, Rb, and Rdcomprises 4-fluoro-phenyl; andwherein the ligand L is coordinated to a metal M selected from the group consisting of Ir, Pt, Os, Re, Ru, Rh, Pd, Ag, Au, and Cu. In one embodiment, only one of Ra, Rb, and Rdis 4-fluoro-phenyl. In another embodiment of the compound comprising the ligand L defined above, L is selected from the group consisting of: In one embodiment of the compound comprising the ligand L defined above, metal M is Ir or Pt. In one embodiment of the compound comprising the ligand L defined above, the compound is heteroleptic. In another embodiment, the compound comprising the ligand L defined above is selected from the group consisting of: wherein Re, Rf, and Rgeach independently represent from mono-substitution to the possible maximum number of substitution, or no substitution; andwherein Re, Rf, and Rgare each independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof. In another embodiment, the compound comprising the ligand L defined above is selected from the group consisting of: wherein Re, Rf, Rg, and Rheach independently represent from mono-substitution to the possible maximum number of substitution, or no substitution;wherein Re, Rf, Rgand Rhare each independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof;wherein X is selected from the group consisting of a single bond, BR, NR, O, Se, C═O, S═O, SO2, CRR′, SiRR′, and GeRR′;wherein R and R′ are each independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof; andwherein two adjacent substituents of R and R′ are optionally joined to form a ring. In another embodiment the compound comprising the ligand L defined above is selected from the group consisting of: In another embodiment the compound comprising the ligand L defined above is selected from the group consisting of: wherein X is selected from the group consisting of a single bond, BR, NR, O, Se, C═O, S═O, SO2, CRR′, SiRR′, and GeRR′;wherein R and R′ are each independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof; andwherein two adjacent substituents of R and R′ are optionally joined to form a ring. According to another aspect, a first device comprising a first organic light emitting device is disclosed. The first organic light emitting device comprises: an anode; a cathode; and an organic layer, disposed between the anode and the cathode, comprises a compound having a structure according to Formula I: wherein R1, R2, and R3each independently represent mono, di, tri, or tetra substitutions, or no substitution;wherein R1is selected from the group consisting of hydrogen, deuterium, alkyl, cycloalkyl, and combinations thereof;wherein R2and R3are each independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof; andwherein the compound is heteroleptic. According to another aspect, a first device comprising a first organic light emitting device is disclosed. The first organic light emitting device comprises: an anode; a cathode; and an organic layer, disposed between the anode and the cathode, comprises a compound comprising a ligand L, wherein L is selected from the group consisting of: wherein Ra, Rb, Rc, and Rdeach independently represent from mono-substitution to the possible maximum number of substitution, or no substitution;wherein Ra, Rb, Rc, and Rdare each independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof;wherein two adjacent substituents of Ra, Rb, Rc, and Rdare optionally joined to form a ring or form a multidentate ligand;wherein at least one of Ra, Rb, and Rdis 4-fluoro-phenyl; andwherein the ligand L is coordinated to a metal M selected from the group consisting of Ir, Pt, Os, Re, Ru, Rh, Pd, Ag, Au, and Cu. The first devices described above can be a consumer product. The first devices can be an organic light-emitting device. The first devices can comprise a lighting panel. In one embodiment of the first devices described above, the organic layer is an emissive layer and the compound is an emissive dopant. In another embodiment of the first devices described above, the organic layer is an emissive layer and the compound is a non-emissive dopant. In the first devices described above, the organic layer can further comprise a host. In one embodiment, the host comprises a triphenylene containing benzo-fused thiophene or benzo-fused furan;wherein any substituent in the host is an unfused substituent independently selected from the group consisting of CnH2n+1, OCnH2n+1, OAr1, N(CnH2n+1)2, N(Ar1)(Ar2), CH═CH—CnH2n+1, C≡CCnH2n+1, Ar1, Ar1—Ar2, CnH2n—Ar1, or no substitution;wherein n is from 1 to 10; andwherein Ar1and Ar2are independently selected from the group consisting of benzene, biphenyl, naphthalene, triphenylene, carbazole, and heteroaromatic analogs thereof. In the first devices described above, the host comprises at least one chemical group selected from the group consisting of triphenylene, carbazole, dibenzothiphene, dibenzofuran, dibenzoselenophene, azacarbazole, aza-dibenzothiophene, aza-dibenzofuran, and aza-dibenzoselenophene. In the first devices described above, the host is selected from the group consisting of: and combinations thereof. In the first devices described above, the host can comprise a metal complex. A formulation comprising the compound disclosed herein is also contemplated as being within the scope of the invention. According to another aspect of the present disclosure, a first device is also provided. The first device includes a first organic light emitting device, that includes an anode, a cathode, and an organic layer disposed between the anode and the cathode. The organic layer may include a host and a phosphorescent dopant. The emissive layer can include a compound according to Formula I, and its variations as described herein. The first device can be one or more of a consumer product, an organic light-emitting device and a lighting panel. The organic layer can be an emissive layer and the compound can be an emissive dopant in some embodiments, while the compound can be a non-emissive dopant in other embodiments. The organic layer can also include a host. In some embodiments, the host can include a metal complex. The host can be a triphenylene containing benzo-fused thiophene or benzo-fused furan. Any substituent in the host can be an unfused substituent independently selected from the group consisting of CnH2n+1, OCnH2n+1, OAr1, N(CnH2n+1)2, N(Ar1)(Ar2), CH═CH—CnH2n+1, C≡C—CnH2n+1, Ar1, Ar1—Ar2, and CnH2n—Ar1, or no substitution. In the preceding substituents n can range from 1 to 10; and Ar1and Ar2can be independently selected from the group consisting of benzene, biphenyl, naphthalene, triphenylene, carbazole, and heteroaromatic analogs thereof. The host can be a compound comprising at least one chemical group selected from the group consisting of triphenylene, carbazole, dibenzothiphene, dibenzofuran, dibenzoselenophene, azatriphenylene, azacarbazole, aza-dibenzothiophene, aza-dibenzofuran, and aza-dibenzoselenophene. The host can include a metal complex. The host can be a specific compound selected from the group consisting of: and combinations thereof. In yet another aspect of the present disclosure, a formulation that comprises a compound according to Formula I is described. The formulation can include one or more components selected from the group consisting of a solvent, a host, a hole injection material, hole transport material, and an electron transport layer material, disclosed herein. Combination with Other Materials The materials described herein as useful for a particular layer in an organic light emitting device may be used in combination with a wide variety of other materials present in the device. For example, emissive dopants disclosed herein may be used in conjunction with a wide variety of hosts, transport layers, blocking layers, injection layers, electrodes and other layers that may be present. The materials described or referred to below are non-limiting examples of materials that may be useful in combination with the compounds disclosed herein, and one of skill in the art can readily consult the literature to identify other materials that may be useful in combination. HIL/HTL: A hole injecting/transporting material to be used in the present invention is not particularly limited, and any compound may be used as long as the compound is typically used as a hole injecting/transporting material. Examples of the material include, but not limit to: a phthalocyanine or porphyrin derivative; an aromatic amine derivative; an indolocarbazole derivative; a polymer containing fluorohydrocarbon; a polymer with conductivity dopants; a conducting polymer, such as PEDOT/PSS; a self-assembly monomer derived from compounds such as phosphonic acid and silane derivatives; a metal oxide derivative, such as MoOx; a p-type semiconducting organic compound, such as 1,4,5,8,9,12-Hexaazatriphenylenehexacarbonitrile; a metal complex, and a cross-linkable compounds. Examples of aromatic amine derivatives used in HIL or HTL include, but not limit to the following general structures: Each of Ar1to Ar9is selected from the group consisting of aromatic hydrocarbon cyclic compounds such as benzene, biphenyl, triphenyl, triphenylene, naphthalene, anthracene, phenalene, phenanthrene, fluorene, pyrene, chrysene, perylene, and azulene; the group consisting of aromatic heterocyclic compounds such as dibenzothiophene, dibenzofuran, dibenzoselenophene, furan, thiophene, benzofuran, benzothiophene, benzoselenophene, carbazole, indolocarbazole, pyridylindole, pyrrolodipyridine, pyrazole, imidazole, triazole, oxazole, thiazole, oxadiazole, oxatriazole, dioxazole, thiadiazole, pyridine, pyridazine, pyrimidine, pyrazine, triazine, oxazine, oxathiazine, oxadiazine, indole, benzimidazole, indazole, indoxazine, benzoxazole, benzisoxazole, benzothiazole, quinoline, isoquinoline, cinnoline, quinazoline, quinoxaline, naphthyridine, phthalazine, pteridine, xanthene, acridine, phenazine, phenothiazine, phenoxazine, benzofuropyridine, furodipyridine, benzothienopyridine, thienodipyridine, benzoselenophenopyridine, and selenophenodipyridine; and the group consisting of 2 to 10 cyclic structural units which are groups of the same type or different types selected from the aromatic hydrocarbon cyclic group and the aromatic heterocyclic group and are bonded to each other directly or via at least one of oxygen atom, nitrogen atom, sulfur atom, silicon atom, phosphorus atom, boron atom, chain structural unit and the aliphatic cyclic group. Wherein each Ar is further substituted by a substituent selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof. In one aspect, Ar1to Ar9is independently selected from the group consisting of: wherein k is an integer from 1 to 20; X101to X108is C (including CH) or N; Z101is NAr1, O, or S; Ar1has the same group defined above. Examples of metal complexes used in HIL or HTL include, but not limit to the following general formula: wherein Met is a metal, which can have an atomic weight greater than 40; (Y101-Y102) is a bidentate ligand, Y101and Y102are independently selected from C, N, O, P, and S; L101is an ancillary ligand; k′ is an integer value from 1 to the maximum number of ligands that may be attached to the metal; and k′+k″ is the maximum number of ligands that may be attached to the metal. In one aspect, (Y101-Y102) is a 2-phenylpyridine derivative. In another aspect, (Y101-Y102) is a carbene ligand. In another aspect, Met is selected from Ir, Pt, Os, and Zn. In a further aspect, the metal complex has a smallest oxidation potential in solution vs. Fc+/Fc couple less than about 0.6 V. Host: The light emitting layer of the organic EL device of the present invention preferably contains at least a metal complex as light emitting material, and may contain a host material using the metal complex as a dopant material. Examples of the host material are not particularly limited, and any metal complexes or organic compounds may be used as long as the triplet energy of the host is larger than that of the dopant. While the Table below categorizes host materials as preferred for devices that emit various colors, any host material may be used with any dopant so long as the triplet criteria is satisfied. Examples of metal complexes used as host are preferred to have the following general formula: wherein Met is a metal; (Y103-Y104) is a bidentate ligand, Y103and Y104are independently selected from C, N, O, P, and S; L101is an another ligand; k′ is an integer value from 1 to the maximum number of ligands that may be attached to the metal; and k′+k″ is the maximum number of ligands that may be attached to the metal. In one aspect, the metal complexes are: wherein (O—N) is a bidentate ligand, having metal coordinated to atoms O and N. In another aspect, Met is selected from Ir and Pt. In a further aspect, (Y103-Y104) is a carbene ligand. Examples of organic compounds used as host are selected from the group consisting of aromatic hydrocarbon cyclic compounds such as benzene, biphenyl, triphenyl, triphenylene, naphthalene, anthracene, phenalene, phenanthrene, fluorene, pyrene, chrysene, perylene, and azulene; the group consisting of aromatic heterocyclic compounds such as dibenzothiophene, dibenzofuran, dibenzoselenophene, furan, thiophene, benzofuran, benzothiophene, benzoselenophene, carbazole, indolocarbazole, pyridylindole, pyrrolodipyridine, pyrazole, imidazole, triazole, oxazole, thiazole, oxadiazole, oxatriazole, dioxazole, thiadiazole, pyridine, pyridazine, pyrimidine, pyrazine, triazine, oxazine, oxathiazine, oxadiazine, indole, benzimidazole, indazole, indoxazine, benzoxazole, benzisoxazole, benzothiazole, quinoline, isoquinoline, cinnoline, quinazoline, quinoxaline, naphthyridine, phthalazine, pteridine, xanthene, acridine, phenazine, phenothiazine, phenoxazine, benzofuropyridine, furodipyridine, benzothienopyridine, thienodipyridine, benzoselenophenopyridine, and selenophenodipyridine; and the group consisting of 2 to 10 cyclic structural units which are groups of the same type or different types selected from the aromatic hydrocarbon cyclic group and the aromatic heterocyclic group and are bonded to each other directly or via at least one of oxygen atom, nitrogen atom, sulfur atom, silicon atom, phosphorus atom, boron atom, chain structural unit and the aliphatic cyclic group. Wherein each group is further substituted by a substituent selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof. In one aspect, the host compound contains at least one of the following groups in the molecule: wherein R101to R107is independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof, when it is aryl or heteroaryl, it has the similar definition as Ar's mentioned above. k is an integer from 0 to 20 or 1 to 20; k′″ is an integer from 0 to 20. X101to X108is selected from C (including CH) or N. Z101and Z102is selected from NR101, O, or S. HBL: A hole blocking layer (HBL) may be used to reduce the number of holes and/or excitons that leave the emissive layer. The presence of such a blocking layer in a device may result in substantially higher efficiencies as compared to a similar device lacking a blocking layer. Also, a blocking layer may be used to confine emission to a desired region of an OLED. In one aspect, compound used in HBL contains the same molecule or the same functional groups used as host described above. In another aspect, compound used in HBL contains at least one of the following groups in the molecule: wherein k is an integer from 1 to 20; L101is an another ligand, k′ is an integer from 1 to 3. ETL: Electron transport layer (ETL) may include a material capable of transporting electrons. Electron transport layer may be intrinsic (undoped), or doped. Doping may be used to enhance conductivity. Examples of the ETL material are not particularly limited, and any metal complexes or organic compounds may be used as long as they are typically used to transport electrons. In one aspect, compound used in ETL contains at least one of the following groups in the molecule: wherein R101is selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof, when it is aryl or heteroaryl, it has the similar definition as Ar's mentioned above. Ar1to Ar3has the similar definition as Ar's mentioned above. k is an integer from 1 to 20. X101to X108is selected from C (including CH) or N. In another aspect, the metal complexes used in ETL contains, but not limit to the following general formula: wherein (O—N) or (N—N) is a bidentate ligand, having metal coordinated to atoms O, N or N, N; L101is another ligand; k′ is an integer value from 1 to the maximum number of ligands that may be attached to the metal. In any above-mentioned compounds used in each layer of the OLED device, the hydrogen atoms can be partially or fully deuterated. Thus, any specifically listed substituent, such as, without limitation, methyl, phenyl, pyridyl, etc. encompasses undeuterated, partially deuterated, and fully deuterated versions thereof. Similarly, classes of substituents such as, without limitation, alkyl, aryl, cycloalkyl, heteroaryl, etc. also encompass undeuterated, partially deuterated, and fully deuterated versions thereof. In addition to and/or in combination with the materials disclosed herein, many hole injection materials, hole transporting materials, host materials, dopant materials, exiton/hole blocking layer materials, electron transporting and electron injecting materials may be used in an OLED. Non-limiting examples of the materials that may be used in an OLED in combination with materials disclosed herein are listed in Table A below. Table A lists non-limiting classes of materials, non-limiting examples of compounds for each class, and references that disclose the materials. TABLE AMATERIALEXAMPLES OF MATERIALPUBLICATIONSHole injection materialsPhthalocyanine and porphyrin compoundsAppl. Phys. Lett. 69, 2160 (1996)Starburst triarylaminesJ. Lumin. 72-74, 985 (1997)CFxFluorohydrocarbon polymerAppl. Phys. Lett. 78, 673 (2001)Conducting polymers (e.g., PEDOT:PSS, polyaniline, polythiophene)Synth. Met. 87, 171 (1997) WO2007002683Phosphonic acid and silane SAMsUS20030162053Triarylamine or polythiophene polymers with conductivity dopantsEP1725079A1Organic compounds with conductive inorganic compounds, such as molybdenum and tungsten oxidesUS20050123751 SID Symposium Digest, 37, 923 (2006) WO2009018009n-type semiconducting organic complexesUS20020158242Metal organometallic complexesUS20060240279Cross-linkable compoundsUS20080220265Polythiophene based polymers and copolymersWO 2011075644 EP2350216Hole transporting materialsTriarylamines (e.g., TPD, α-NPD)Appl. Phys. Lett. 51, 913 (1987)U.S. Pat. No. 5,061,569EP650955J. Mater. Chem. 3, 319 (1993)Appl. Phys. Lett. 90, 183503 (2007)Appl. Phys. Lett. 90, 183503 (2007)Triarylamine on spirofluorene coreSynth. Met. 91, 209 (1997)Arylamine carbazole compoundsAdv. Mater. 6, 677 (1994), US20080124572Triarylamine with (di)benzothiophene/ (di)benzofuranUS20070278938, US20080106190 US20110163302IndolocarbazolesSynth. Met. 111, 421 (2000)Isoindole compoundsChem. Mater. 15, 3148 (2003)Metal carbene complexesUS20080018221Phosphorescent OLED host materialsRed hostsArylcarbazolesAppl. Phys. Lett. 78, 1622 (2001)Metal 8- hydroxyquinolates (e.g., Alq3, BAlq)Nature 395, 151 (1998)US20060202194WO2005014551WO2006072002Metal phenoxybenzothiazole compoundsAppl. Phys. Lett. 90, 123509 (2007)Conjugated oligomers and polymers (e.g., polyfluorene)Org. Electron. 1, 15 (2000)Aromatic fused ringsWO2009066779, WO2009066778, WO2009063833, US20090045731, US20090045730, WO2009008311, US20090008605, US20090009065Zinc complexesWO2010056066Chrysene based compoundsWO2011086863Green hostsArylcarbazolesAppl. Phys. Lett. 78, 1622 (2001)US20030175553WO2001039234Aryltriphenylene compoundsUS20060280965US20060280965WO2009021126Poly-fused heteroaryl compoundsUS20090309488 US20090302743 US20100012931Donor acceptor type moleculesWO2008056746WO2010107244Aza-carbazole/ DBT/DBFJP2008074939US20100187984Polymers (e.g., PVK)Appl. Phys. Lett. 77, 2280 (2000)Spirofluorene compoundsWO2004093207Metal phenoxybenzooxazole compoundsWO2005089025WO2006132173JP200511610Spirofluorene- carbazole compoundsJP2007254297JP2007254297IndolocarbazolesWO2007063796WO20070637545-member ring electron deficient heterocycles (e.g., triazole, oxadiazole)J. Appl. Phys. 90, 5048 (2001)WO2004107822Tetraphenylene complexesUS20050112407Metal phenoxypyridine compoundsWO2005030900Metal coordination complexes (e.g., Zn, Al with N{circumflex over ( )}N ligands)US20040137268, US20040137267Blue hostsArylcarbazolesAppl. Phys. Lett, 82, 2422 (2003)US20070190359Dibenzothiophene/ Dibenzofuran- carbazole compoundsWO2006114966, US20090167162US20090167162WO2009086028US20090030202, US20090017330US20100084966Silicon aryl compoundsUS20050238919WO2009003898Silicon/ Germanium aryl compoundsEP2034538AAryl benzoyl esterWO2006100298Carbazole linked by non- conjugated groupsUS20040115476Aza-carbazolesUS20060121308High triplet metal organometallic complexU.S. Pat. No. 7,154,114Phosphorescent dopantsRed dopantsHeavy metal porphyrins (e.g., PtOEP)Nature 395, 151 (1998)Iridium(III) organometallic complexesAppl. Phys. Lett. 78, 1622 (2001)US20030072964US20030072964US20060202194US20060202194US20070087321US20080261076 US20100090591US20070087321Adv. Mater, 19, 739 (2007)WO2009100991WO2008101842U.S. Pat. No. 7,232,618Platinum(II) organometallic complexesWO2003040257US20070103060Osmium(III) complexesChem. Mater. 17, 3532 (2005)Ruthenium(II) complexesAdv. Mater. 17, 1059 (2005)Rhenium (I), (II), and (III) complexesUS20050244673Green dopantsIridium(III) organometallic complexesInorg. Chem. 40, 1704 (2001)US20020034656U.S. Pat. No. 7,332,232US20090108737WO2010028151EP1841834BUS20060127696US20090039776U.S. Pat. No. 6,921,915US20100244004U.S. Pat. No. 6,687,266Chem. Mater. 16, 2480 (2004)US20070190359US 20060008670 JP2007123392WO2010086089, WO2011044988Adv. Mater. 16, 2003 (2004)Angew. Chem. Int. Ed. 2006, 45, 7800WO2009050290US20090165846US20080015355US20010015432US20100295032Monomer for polymeric metal organometallic compoundsU.S. Pat. No. 7,250,226, U.S. Pat. No. 7,396,598Pt(II) organometallic complexes, including polydentated ligandsAppl. Phys. Lett. 86, 153505 (2005)Appl. Phys. Lett. 86, 153505 (2005)Chem. Lett. 34, 592 (2005)WO2002015645US20060263635US20060182992 US20070103060Cu complexesWO2009000673US20070111026Gold complexesChem. Commun. 2906 (2005)Rhenium(III) complexesInorg. Chem. 42, 1248 (2003)Osmium(II) complexesU.S. Pat. No. 7,279,704Deuterated organometallic complexesUS20030138657Organometallic complexes with two or more metal centersUS20030152802U.S. Pat. No. 7,090,928Blue dopantsIridium(III) organometallic complexesWO2002002714WO2006009024US20060251923 US20110057559 US20110204333U.S. Pat. No. 7,393,599, WO2006056418, US20050260441, WO2005019373U.S. Pat. No. 7,534,505WO2011051404U.S. Pat. No. 7,445,855US20070190359, US20080297033 US20100148663U.S. Pat. No. 7,338,722US20020134984Angew. Chem. Int. Ed. 47, 4542 (2008)Chem. Mater. 18, 5119 (2006)Inorg. Chem. 46, 4308 (2007)WO2005123873WO2005123873WO2007004380WO2006082742Osmium(II) complexesU.S. Pat. No. 7,279,704Organometallics 23, 3745 (2004)Gold complexesAppl. Phys. Lett. 74, 1361 (1999)Platinum(II) complexesWO2006098120, WO2006103874Pt tetradentate complexes with at least one metal- carbene bondU.S. Pat. No. 7,655,323Exciton/hole blocking layer materialsBathocuprine compounds (e.g., BCP, BPhen)Appl. Phys. Lett. 75, 4 (1999)Appl. Phys. Lett. 79, 449 (2001)Metal 8- hydroxyquinolates (e.g., BAlq)Appl. Phys. Lett. 81, 162 (2002)5-member ring electron deficient heterocycles such as triazole, oxadiazole, imidazole, benzoimidazoleAppl. Phys. Lett. 81, 162 (2002)Triphenylene compoundsUS20050025993Fluorinated aromatic compoundsAppl. Phys. Lett. 79, 156 (2001)Phenothiazine- S-oxideWO2008132085Silylated five- membered nitrogen, oxygen, sulfur or phosphorus dibenzoheterocyclesWO2010079051Aza-carbazolesUS20060121308Electron transporting materialsAnthracene- benzoimidazole compoundsWO2003060956US20090179554Aza triphenylene derivativesUS20090115316Anthracene- benzothiazole compoundsAppl. Phys. Lett. 89, 063504 (2006)Metal 8- hydroxyquinolates (e.g., Alq3, Zrq4)Appl. Phys. Lett. 51, 913 (1987) U.S. Pat. No. 7,230,107Metal hydroxy- benzoquinolatesChem. Lett. 5, 905 (1993)Bathocuprine compounds such as BCP, BPhen, etcAppl. Phys. Lett. 91, 263503 (2007)Appl. Phys. Lett. 79, 449 (2001)5-member ring electron deficient heterocycles (e.g.,triazole, oxadiazole, imidazole, benzoimidazole)Appl. Phys. Lett. 74, 865 (1999)Appl. Phys. Lett. 55, 1489 (1989)Jpn. J. Apply. Phys. 32, L917 (1993)Silole compoundsOrg. Electron. 4, 113 (2003)Arylborane compoundsJ. Am. Chem. Soc. 120, 9714 (1998)Fluorinated aromatic compoundsJ. Am. Chem. Soc. 122, 1832 (2000)Fullerene (e.g., C60)US20090101870Triazine complexesUS20040036077Zn (N{circumflex over ( )}N) complexesU.S. Pat. No. 6,528,187 EXPERIMENTAL Fluorine substitution has been used widely in phosphorescent compounds to tune the emission color due to its strong electron negativity. Unfortunately, fluorine substitution usually reduces the lifetime for blue and green/yellow devices. In most cases, even the fluorine substitution does not affect color, it still drastically affects the device lifetime. As shown in Table 1 below, the fluorinated compounds showed much shorter lifetime than the non-fluorinated one. TABLE 1Device performance using prior artCompounds A through D as emissive dopantsLT50from 40CompoundCIE (x, y)LE (cd/A)mA/cm2(h)Compound I-A(0.30, 0.64)62230Compound I-B(0.30, 0.64)5335Compound I-C(0.30, 0.64)4810Compound I-D(0.29, 0.64)482 Table 1 lists the device performance of the prior art Compounds I-A through I-D as emissive dopant. All the devices had the same structure. All example devices were fabricated by high vacuum (<10−7Torr) thermal evaporation. The anode electrode is 1200 Å of indium tin oxide (ITO). The cathode consisted of 10 Å of LiF followed by 1,000 Å of Al. All devices are encapsulated with a glass lid sealed with an epoxy resin in a nitrogen glove box (<1 ppm of H2O and O2) immediately after fabrication, and a moisture getter was incorporated inside the package. The organic stack of the device examples consisted of sequentially, from the ITO surface, 100 Å of copper phthalocyanine (CuPc) as the hole injection layer (HIL), 300 Å of 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPD) as the hole transporting layer (HTL), 300 Å of Compound A-D doped in CBP as host with as the emissive layer (EML), 50 Å of hexaphenyltriphenylene as blocking layer (BL), 450 Å of Alq3(tris-8-hydroxyquinoline aluminum) as the ETL. Compound I-A through I-D show same emission color. The prior art fluorinated emitters, Compound I-B through I-D have lower efficiency than Compound I-A. More importantly, the device lifetime of Compound I-B through I-D is greatly reduced compared to Compound I-A. The longest lifetime out of the fluorinated compounds is from Compound I-B, which as a para-fluorine substitution. It is still almost 8 times less stable than the nonfluorinated compound. In the inventive compounds disclosed herein, the inventors unexpectedly discovered that by introducing fluorine substitution to certain positions, it does not drastically reduce device lifetime. On the contrary, introducing fluorine substitution to a para position of a phenyl group can maintain or even improve device lifetime. Therefore, one can use the color tuning properties of fluorine and obtain stable devices. The compounds were synthesized according to previously published procedures that are documented, for example in US patent publication 2012299468A1) Device Examples All example devices were fabricated by high vacuum (<10′ Torr) thermal evaporation. The anode electrode is 800 Å of indium tin oxide (ITO). The cathode consisted of 10 Å of LiF followed by 1,000 Å of Al. All devices are encapsulated with a glass lid sealed with an epoxy resin in a nitrogen glove box (<1 ppm of H2O and O2) immediately after fabrication, and a moisture getter was incorporated inside the package. The organic stack of the device examples consisted of sequentially, from the ITO surface, 100 Å of LG101 as the hole injection layer (HIL), 450 Å of 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPD) as the hole transporting layer (HTL), 300 Å of the invention compound (10%) doped in Compound H1(70%) and Compound H2 (20%) as host with as the emissive layer (EML), 400 Å of Alq3(tris-8-hydroxyquinoline aluminum) as the ETL. Comparative Examples with Compound A-F were fabricated similarly to the Device Examples except that the Compound A, B, C, D, E, and F were used as the emitters in the EML. The device structures are summarized in Table 2. Tables 3, 4, and 5 summarize the performance of the devices. The driving voltage (V), luminous efficiency (LE), and external quantum efficiency (EQE) were measured at 1000 nits, while the lifetime (LT95%) was defined as the time required for the device to decay to 95% of its initial luminance (L0) under a constant current density. As used herein, NPD, Alq, Compounds H1, H2, A, B, C, D, E, and F have the following structures: TABLE 2Device structures of inventive compounds and comparative compoundsDeviceExamplesHILHTLEML (300 Å, doping %)BLETLExample 1LG101 100 ÅNPD 450 ÅCompoundCompound I-CompoundAlq 400 ÅH1:Compound13H2 100 ÅH210%(70%:20%)Example 2LG101 100 ÅNPD 450 ÅCompoundCompound I-1CompoundAlq 400 ÅH1:Compound10%H2 100 ÅH2(70%:20%)ComparativeLG101 100 ÅNPD 450 ÅCompoundCompound ACompoundAlq 400 ÅExample 1H1:Compound10%H2 100 ÅH2(70%:20%)ComparativeLG101 100 ÅNPD 450 ÅCompoundCompound BCompoundAlq 400 ÅExample 2H1:Compound10%H2 100 ÅH2(70%:20%)ComparativeLG101 100 ÅNPD 450 ÅCompoundCompound CCompoundAlq 400 ÅExample 3H1:Compound10%H2 100 ÅH2(70%:20%)ComparativeLG101 100 ÅNPD 450 ÅCompoundCompound DCompoundAlq 400 ÅExample 4H1:Compound10%H2 100 ÅH2(70%:20%)ComparativeLG101 100 ÅNPD 450 ÅCompoundCompound ECompoundAlq 400 ÅExample 5H1:Compound10%H2 100 ÅH2(70%:20%)ComparativeLG101 100 ÅNPD 450 ÅCompoundCompound FCompoundAlq 400 ÅExample 6H1:Compound10%H2 100 ÅH2(70%:20%) TABLE 3Device results of Comparative Compounds A and BVoltageEQELT95%Devicexyλmax(nm)(V)LE (Cd/A)(%)L0(nits)(h)Comparative0.3240.6285245.966.218.430001568Example 1Comparative0.3210.6305235.667.518.73000137Example 2 Referring to Tables 2 and 3, Comparative Example 1, having Compound A as the emitter, and Comparative Example 2, having Compound B as the emitter, were fabricated to show the effect of the para fluoro phenyl substitution on the pyridine side of the ligand. Compounds A and B showed similar color and device characteristics in terms of voltage, luminous efficiency, and EQE. However, the fluorine substitution significantly lowered the device lifetime. Compared to Compound A, device with Compound B as the emitter has a lifetime (LT95%) of more than 10 times less. Therefore, one would expect that the fluorine substitution at the para position will be harmful for lifetime and would not be motivated to try this substitution pattern on other emitters. TABLE 4Device results of Compound I-13 and Compounds C, D, and EVoltageEQELT95%Devicexyλmax(nm)(V)LE (Cd/A)(%)L0(nits)(h)Example 10.4190.5645504.672.621.230001987Comparative0.4530.5365604.771.521.930002618Example 3Comparative0.4400.5365584.971.021.3300059Example 4Comparative0.4760.5165665.657.719.03000454Example 5 Table 4 showed the device performance of the inventive Compound I-13 (device Example 1) and comparative Compounds C, D, and E (devices Comparative Examples 3, 4, and 5, respectively). As can be seen clearly from the table, fluorine substitution at different positions only slightly changed the emission color and efficiency. However, fluorine at meta (Comparative Example 4) and ortho (Comparative Example 5) position significantly lowered device lifetime (LT95), while, fluorine substitution at para position in the inventive Compound I-13 (device Example 1) largely maintained the lifetime compared to Comparative example 5. The inventive compound also shows lower operating voltage than the comparative compounds. It is unexpected that the inventive compound showed much improved device performance compared to Comparative Compounds D and E. TABLE 5Device results of Compound I-1 and Compounds FVoltageEQELT95%xyλmax(nm)(V)LE (Cd/A)(%)L0(nits)(h)Example 20.4090.5775424.873.820.630003446Comparative0.4130.5735444.585.723.930001891Example 6 Table 5 summarizes device performance using Compound I-1 (device Example 2) and Comparative Compound F (Comparative Example 6) as emitter. Inventive compound I-1 showed slightly blue shifted color and slightly lower EQE. However, Compound I-1 showed much improved lifetime compared to Compound F. The device lifetime of Example 2 almost doubled compared to Comparative Example 6. It is understood that the various embodiments described herein are by way of example only, and are not intended to limit the scope of the invention. For example, many of the materials and structures described herein may be substituted with other materials and structures without deviating from the spirit of the invention. The present invention as claimed may therefore include variations from the particular examples and preferred embodiments described herein, as will be apparent to one of skill in the art. It is understood that various theories as to why the invention works are not intended to be limiting. | 56,214 |
11944001 | DETAILED DESCRIPTION Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, exemplary embodiments are described below, and by referring to the drawings, to explain various aspects. In the drawings, the sizes of elements may be exaggerated or reduced for ease of description. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one of,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list. General and widely-used terms have been employed herein, in consideration of functions provided and/or used in the present disclosure, and may vary according to, for example, an intention of a person of ordinary skilled in the art, a precedent, or the emergence of new technologies. In addition, in some cases, the applicant may arbitrarily select specific terms. Then, the applicant, will provide the meaning of the terms in the detailed description of the present disclosure. Accordingly, it will be understood that the terms used herein should be interpreted as having meanings that are consistent with their meanings in the context of the relevant art and shall not be interpreted in an idealized or overly formal sense unless expressly defined herein. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms, including “at least one,” unless the content clearly indicates otherwise. “At least one” is not to be construed as limiting “a” or “an.” “Or” means “and/or.” It will be further understood that the terms “comprises” and/or “comprising,” or “includes” and/or “including” when used in this specification, specify the presence of stated features, regions, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, regions, integers, steps, operations, elements, components, and/or groups thereof. Furthermore, relative terms, such as “lower” or “bottom” and “upper” or “top,” may be used herein to describe one element's relationship to another element as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures. For example, if the device in one of the figures is turned over, elements described as being on the “lower” side of other elements would then be oriented on “upper” sides of the other elements. The exemplary term “lower,” can therefore, encompasses both an orientation of “lower” and “upper,” depending on the particular orientation of the figure. Similarly, if the device in one of the figures is turned over, elements described as “below” or “beneath” other elements would then be oriented “above” the other elements. The exemplary terms “below” or “beneath” can, therefore, encompass both an orientation of above and below. It will also be understood that when an element such as a layer, a region, or a component is referred to as being “on” another element, it can be “directly on” the other element, or intervening layers, regions, or components may also be present. For example, when a portion of a layer, film, region, plate, etc. is said to be “on” another portion, this includes not only the case in which the portion is “directly on” another portion, but also the case in which an intervening layer is placed therebetween. When a first portion is placed “directly on” a second portion, there is no intervening layer between the first portion and the second portion. Although the terms “first”, “second”, etc., may be used herein to describe various elements, components, regions, and/or layers, these elements, components, regions, and/or layers should not be limited by these terms. These terms are used only to distinguish one component from another, not for purposes of limitation. In the present specification, the singular form includes the plural form unless defined otherwise. “About” or “approximately” as used herein is inclusive of the stated value and means within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, considering the measurement in question and the error associated with measurement of the particular quantity (i.e., the limitations of the measurement system). For example, “about” can mean within one or more standard deviations, or within ±30%, 20%, 10% or 5% of the stated value. Exemplary embodiments are described herein with reference to cross section illustrations that are schematic illustrations of idealized embodiments. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments described herein should not be construed as limited to the particular shapes of regions as illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region illustrated or described as flat may, typically, have rough and/or nonlinear features. Moreover, sharp angles that are illustrated may be rounded. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the present claims. The term “perovskite” as used herein refers to a crystalline compound represented by, for example, the formula AB′X3, wherein A and B′ are cations having different sizes, and X is an anion. In the unit cell of the perovskite compound, a site of the first cation A may be positioned at (0,0,0), a site of the second cation B′ may be positioned at (1/2,1/2,1/2), and the anion X may be positioned at (1/2,1/2,0). The term “perovskite” as used herein is understood as encompassing not only the ideal symmetric structure of CaTiO3, but also a compound having a perovskite-like structure such as a twisted structure having less symmetry than the ideal symmetric structure of CaTiO3. It will be understood that the perovskite compound used herein may encompass a compound having the ideal symmetric structure and a compound having a twisted structure with lower symmetry depending on types of A, B′, and X. The term “maximum luminescence wavelength” as used herein refers to a wavelength value corresponding to a point having a maximum luminescence intensity in a photoluminescence (PL) spectrum of a solution or film sample including a compound. The term “full width at half maximum (FWHM)” as used herein refers to a wavelength width of a point corresponding to ½ of the maximum luminescence wavelength in the PL spectrum. The term “C1-C3alkyl group” as used herein refers to a branched or unbranched (or a straight or linear) completely saturated aliphatic hydrocarbon monovalent group having 1 to 3 carbon atoms, and includes a methyl group, an ethyl group, and a propyl group. The term “C1-C10alkyl group” as used herein refers to a branched or unbranched (or a straight or linear) completely saturated aliphatic hydrocarbon monovalent group having 1 to 10 carbon atoms. Non-limiting examples of the C1-C10alkyl group may include a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, an isobutyl group, a sec-butyl group, a t-butyl group, an isopentyl group, a neopentyl group, an iso-amyl group, a n-hexyl group, a 3-methylhexyl group, a 2,2-dimethylpentyl group, a 2,3-dimethylpentyl group, and a n-heptyl group. The term “C2-C3alkenyl group” as used herein refers to an aliphatic hydrocarbon group including at least one carbon-carbon double bond in the middle or at the terminus of a C2-C3alkyl group, and examples thereof include an ethenyl group, a propenyl group, and the like. The term “C2-C3alkynyl group” as used herein refers to an aliphatic hydrocarbon group including at least one carbon-carbon triple bond in the middle or at the terminus of a C2-C3alkyl group, and examples thereof include an ethynyl group, a propynyl group, and the like. The term “C1-C3alkoxy group” as used herein refers to a monovalent group represented by −OA101(wherein A101is a C1-C3alkyl group), and includes a methoxy group, an ethoxy group, and an isopropyloxy group. The term “C6-C20aryl group” as used herein refers to a monovalent group having a carbocyclic aromatic system having 6 to 20 carbon atoms. Examples of the C6-C20aryl group include a phenyl group, a naphthyl group, an anthracenyl group, a phenanthrenyl group, a pyrenyl group, a chrysenyl group, and the like. When the C6-C20aryl group includes two or more rings, the two or more rings may be fused to each other. The term “C7-C20arylalkyl group” as used herein refers to a group represented by -A102A103(wherein A102is a substituted C1-C14alkyl group, and A103is a C6-C19aryl group). At least one hydrogen atom of the foregoing groups may be substituted with a halogen atom, a C1-C20alkyl group substituted with a halogen atom (for example, CF3, CH3CF2, CH2F, CCl3, and the like), a C1-C20alkoxy group, a C2-C20alkoxyalkyl group, a hydroxyl group (—OH), a nitro group (—NO2), a cyano group (—CN), an amino group (—NH2), an alkylamino group (RNH—, wherein R is a C1-C10alkyl group), a dialkylamino group (R2NH—, wherein each R is the same or different C1-C10alkyl group), an amidino group (—C(═NH)NH2), a hydrazino group (—NHNH2), a hydrazono group (═N—NH2), a carbamoyl group (—C(O)NH2), a carboxyl group or a salt thereof (—C(═O)OX, wherein X is a hydrogen or a cation), a sulfonyl group (—S(═O)2), a sulfamoyl group (NH2—SO2—), a sulfonic acid group or a salt thereof ((—SO3X2wherein X is a hydrogen or a cation), a phosphoric acid or a salt thereof (PO3X2wherein X is a hydrogen or a cation), a tosyl group (CH3C6H4SO2—), a C1-C20alkyl group, a C2-C20alkenyl group, a C2-C20alkynyl group, a C1-C20heteroalkyl group, a C6-C20aryl group, a C6-C20arylalkyl group, a C4-C20heteroaryl group, a C5-C20heteroarylalkyl group, a C4-C20heteroaryloxy group, a C5-C20heteroaryloxyalkyl group, or a C5-C20heteroarylalkyl group, provided that the substituted atom's normal valence is not exceeded. The term “metal” as used herein refers to a metal such as an alkali metal, an alkaline earth metal, a transition metal, and a basic metal. The term “metal” also includes a semi-metal such as Si and the like. Hereinafter, a luminescent material, a method of preparing the luminescent material, and a light-emitting device including the luminescent material are described in detail with reference to the accompanying drawings. [Luminescent Material] In one or more embodiments, a luminescent material may include a first compound represented by Formula 1 and a second compound represented by Formula 2: [A][Cu][X]3Formula 1 R21R22R23N. Formula 2 In Formulae 1 and 2, A, X, and R21to R23are understood by referring to descriptions thereof provided below. The luminescent material may be a mixture of the first compound and the second compound. In detail, the first compound may form a crystal, and for example, may be perovskite. In one or more embodiments, the second compound may be an amine, and for example, may include at least one of a primary amine, secondary amine, or tertiary amine. In one or more embodiments, the second compound may not be included in the crystal of the first compound. That is, the second compound may be present on a surface of the first compound. The presence of the second compound may be confirmed by XRD analysis as described in Examples below. An amount of the second compound in the luminescent material may be greater than 0 wt %. In detail, the amount of the second compound in the luminescent material may be greater than about 0 wt %, about 5 wt % or greater, about 10 wt % or greater, about 15 wt % or greater, about 20 wt % or greater, about 30 wt % or greater, about 60 wt % or less, about 70 wt % or less, about 80 wt % or less, or about 90 wt % or less. In particular, when the amount of the second compound in the luminescent material is from about 10 wt % or greater to about 90 wt % or less, the luminescent material may emit blue light. In Formula 1, A may be R11R12R13C, R11R12R13R14N, R11R12N═C(R13)—NR14R15, Li, Na, K, Cs, Rb, Fr, or any combination thereof. Here, R11to R15may each independently be hydrogen, deuterium, —N(Q11)(Q12), a C1-C3alkyl group, a C2-C3alkenyl group, a C2-C3alkynyl group, or a C1-C3alkoxy group, and Q11and Q12may each independently be hydrogen, deuterium, a C1-C3alkyl group, a C2-C3alkenyl group, a C2-C3alkynyl group, or a C1-C3alkoxy group. For example, R11to R15may each independently be hydrogen, deuterium, —N(Q11)(Q12), a methyl group, an ethyl group, an iso-propyl group, an n-butyl group, an iso-butyl group, a sec-butyl group, a methoxy group, an ethoxy group, an iso-propoxy group, an n-butoxy group, an iso-butoxy group, or a sec-butoxy group, and Q11and Q12may each independently be hydrogen, deuterium, methyl group, an ethyl group, an iso-propyl group, an n-butyl group, an iso-butyl group, a sec-butyl group, a methoxy group, an ethoxy group, an iso-propoxy group, an n-butoxy group, an iso-butoxy group, or a sec-butoxy group. In one or more embodiments, A in Formula 1 may be NH4, CH3NH3, C2H5NH3, (CH3)2NH2, CH(NH2)2, Li, Na, K, Rb, Cs, Fr, or any combination thereof. In one or more embodiments, A in Formula 1 may be CH3NH3, CH(NH2)2, Cs, or any combination thereof. In one or more embodiments, X in Formula 1 may be at least one of F, Cl, Br, I, or any combination thereof. In one or more embodiments, X in Formula 1 may be Br. In one or more embodiments, the first compound may be CsCuBr3, CH3NH3CuBr3, CH(NH2)2CuBr3, or any combination thereof. In Formula 2, R21to R23may each independently be selected from hydrogen, deuterium, a substituted or unsubstituted C1-C10alkyl group, a substituted or unsubstituted C6-C20aryl group, and a substituted or unsubstituted C7-C20arylalkyl group, wherein at least one of R21to R23may be selected from a substituted or unsubstituted C1-C10alkyl group, a substituted or unsubstituted C6-C20aryl group, and a substituted or unsubstituted C7-C20arylalkyl group, and two substituents selected from R21to R23may optionally be linked to each other to form a ring. In one or more embodiments, R21to R23in Formula 2 may each independently be: hydrogen, deuterium, a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, an n-pentyl group, an isopentyl group, a 2-methylbutyl group, a sec-pentyl group, a tert-pentyl group, a neo-pentyl group, a 3-pentyl group, a 3-methyl-2-butyl group, an n-hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, an n-heptyl group, an isoheptyl group, a sec-heptyl group, a tert-heptyl group, an n-octyl group, an isooctyl group, a sec-octyl group, a tert-octyl group, an n-nonyl group, an isononyl group, a sec-nonyl group, a tert-nonyl group, an n-decyl group, a phenyl group, a naphthyl group, a benzyl group, a phenylethyl group, a phenylpropyl group, or a phenylbutyl group; a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, an n-pentyl group, an isopentyl group, a 2-methylbutyl group, a sec-pentyl group, a tert-pentyl group, a neo-pentyl group, a 3-pentyl group, a 3-methyl-2-butyl group, an n-hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, an n-heptyl group, an isoheptyl group, a sec-heptyl group, a tert-heptyl group, an n-octyl group, an isooctyl group, a sec-octyl group, a tert-octyl group, an n-nonyl group, an isononyl group, a sec-nonyl group, a tert-nonyl group, or an n-decyl group, each substituted with at least one of deuterium, —F, —Cl, —Br, —I, a hydroxy group, an amino group, a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, or a tert-butyl group; or a phenyl group, a naphthyl group, a benzyl group, a phenylethyl group, a phenylpropyl group, or a phenylbutyl group, each substituted with at least one of deuterium, —F, —Cl, —Br, —I, a hydroxy group, an amino group, a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, or a tert-butyl group, wherein at least one of R21to R23may be: a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, an n-pentyl group, an isopentyl group, a 2-methylbutyl group, a sec-pentyl group, a tert-pentyl group, an neo-pentyl group, a 3-pentyl group, a 3-methyl-2-butyl group, an n-hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, an n-heptyl group, an isoheptyl group, a sec-heptyl group, a tert-heptyl group, an n-octyl group, an isooctyl group, a sec-octyl group, a tert-octyl group, an n-nonyl group, an isononyl group, a sec-nonyl group, a tert-nonyl group, an n-decyl group, a phenyl group, a naphthyl group, a benzyl group, a phenylethyl group, a phenylpropyl group, or a phenylbutyl group; a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, an n-pentyl group, an isopentyl group, a 2-methylbutyl group, a sec-pentyl group, a tert-pentyl group, a neo-pentyl group, a 3-pentyl group, a 3-methyl-2-butyl group, an n-hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, an n-heptyl group, an isoheptyl group, a sec-heptyl group, a tert-heptyl group, an n-octyl group, an isooctyl group, a sec-octyl group, a tert-octyl group, an n-nonyl group, an isononyl group, a sec-nonyl group, a tert-nonyl group, or an n-decyl group, each substituted with at least one of deuterium, —F, —Cl, —Br, —I, a hydroxy group, an amino group, a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, or a tert-butyl group; or a phenyl group, a naphthyl group, a benzyl group, a phenylethyl group, a phenylpropyl group, or a phenylbutyl group, each substituted with at least one of deuterium, —F, —Cl, —Br, —I, a hydroxy group, an amino group, a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, or a tert-butyl group. In one or more embodiments, R21to R23in Formula 2 may each independently be: hydrogen, deuterium, a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, an n-pentyl group, an isopentyl group, a 2-methylbutyl group, a sec-pentyl group, a tert-pentyl group, a neo-pentyl group, a 3-pentyl group, a 3-methyl-2-butyl group, an n-hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, a phenyl group, a benzyl group, a phenylethyl group, or a phenylpropyl group; a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, an n-pentyl group, an isopentyl group, a 2-methylbutyl group, a sec-pentyl group, a tert-pentyl group, a neo-pentyl group, a 3-pentyl group, a 3-methyl-2-butyl group, an n-hexyl group, an isohexyl group, a sec-hexyl group, or a tert-hexyl group, each substituted with at least one of deuterium, —F, —Cl, —Br, —I, a hydroxy group, an amino group, a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, or a tert-butyl group; or a phenyl group, a benzyl group, a phenylethyl group, or a phenylpropyl group, each substituted with at least one of deuterium, —F, —Cl, —Br, —I, a hydroxy group, an amino group, a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, or a tert-butyl group, wherein at least one of R21to R23may be: an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, an n-pentyl group, an isopentyl group, a 2-methylbutyl group, a sec-pentyl group, a tert-pentyl group, a neo-pentyl group, a 3-pentyl group, a 3-methyl-2-butyl group, an n-hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, a phenyl group, a benzyl group, a phenylethyl group, or a phenylpropyl group; an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, an n-pentyl group, an isopentyl group, a 2-methylbutyl group, a sec-pentyl group, a tert-pentyl group, a neo-pentyl group, a 3-pentyl group, a 3-methyl-2-butyl group, an n-hexyl group, an isohexyl group, a sec-hexyl group, or a tert-hexyl group, each substituted with at least one of deuterium, —F, —Cl, —Br, —I, a hydroxy group, an amino group, a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, or a tert-butyl group; or a phenyl group, a benzyl group, a phenylethyl group, or a phenylpropyl group, each substituted with at least one of deuterium, —F, —Cl, —Br, —I, a hydroxy group, an amino group, a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, or a tert-butyl group. In one or more embodiments, R21in Formula 2 may be: an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, an n-pentyl group, an isopentyl group, a 2-methylbutyl group, a sec-pentyl group, a tert-pentyl group, a neo-pentyl group, a 3-pentyl group, a 3-methyl-2-butyl group, an n-hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, a phenyl group, a benzyl group, a phenylethyl group, or a phenylpropyl group; an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, an n-pentyl group, an isopentyl group, a 2-methylbutyl group, a sec-pentyl group, a tert-pentyl group, a neo-pentyl group, a 3-pentyl group, a 3-methyl-2-butyl group, an n-hexyl group, an isohexyl group, a sec-hexyl group, or a tert-hexyl group, each substituted with at least one of deuterium, —F, —Cl, —Br, —I, a hydroxy group, an amino group, a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, or a tert-butyl group; or a phenyl group, a benzyl group, a phenylethyl group, or a phenylpropyl group, each substituted with at least one of deuterium, —F, —C, —Br, —I, a hydroxy group, an amino group, a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, or a tert-butyl group, and R22and R23in Formula 2 may each independently be hydrogen or deuterium. In one or more embodiments, the second compound may include propylamine, butylamine, isobutylamine, aniline, phenylmethylamine, phenylethylamine, or any combination thereof. The luminescent material may emit blue light or green light. For example, the luminescent material may emit blue light. A maximum luminescence wavelength (experimental value) of the luminescent material may be from about 420 nm or greater to about 520 nm or less, for example, may be about 420 nm or greater, about 430 nm or more, about 495 nm or less, about 475 nm or less, or about 450 nm or less. In particular, when the maximum luminescence wavelength of the luminescent material is between about 420 nm and about 475 nm, a light-emitting device having a dark blue emission color may be provided. A FWHM of the luminescent material may be about 100 nm or less. In detail, the FWHM of the luminescent material may be about 95 nm or less or 90 nm or less. The smaller FWHM the luminescent material has, the higher color purity the light-emitting device has, thereby improving luminescence efficiency within a desired wavelength range. In the luminescent material, the second compound may compensate for defects at the boundary with the first compound, so that the PL intensity of the luminescent material may be improved. Currently, inorganic compounds or organic/inorganic composite compounds, which exhibit commercially available performance in terms of luminescence characteristics and/or stability, mostly include elements, such as cadmium, lead, and the like, which may cause environmental problems. However, the luminescent material of the present disclosure may be able to exhibit luminescence characteristics and/or stability at a commercially available level, without including cadmium, lead, and the like, so that the luminescent material of the present disclosure does not cause environmental problems. A method of preparing the luminescent material may be understood by those of ordinary skill in the art with reference to a preparation method and Synthesis Examples described below. Preparation Method of Luminescent Material According to one or more embodiments, a method of preparing the luminescent material including the first compound represented by Formula 1 and the second compound represented by Formula 2 includes: providing a composition (e.g., a mixture) on a substrate, the mixture including at least one A precursor, at least one Cu precursor, a second compound represented by Formula 2, and a solvent; crystallizing the composition by adding an anti-solvent thereto; and removing the solvent and the anti-solvent by heat treatment. First, a composition including at least one A precursor, at least one Cu precursor, a second compound represented by Formula 2, and a solvent may be provided on a substrate. The composition does not include a salt of the second compound, such as a compound represented by R21R22R23NX. The mixture may be distinguished from a mixture for preparing organic-inorganic hybrid perovskite including a compound represented by R21R22R23NX. The second compound may be in a liquid state at room temperature. In the composition, an amount of the second compound may be determined according to the finally prepared luminescent material. In one or more embodiments, the amount of the second compound in the composition may be regarded as an amount that is greater than about 10 wt %, or from about 10 wt % or more to about 90 wt % or less, based on the total weight of the composition. In one or more embodiments, an amount of the second compound in the luminescent material may be from about 10 wt % to about 90 wt %, based on the total weight of the luminescent material. In the composition, a molar ratio of the at least one A precursor to the at least one Cu precursor may be determined according to the compositional makeup of a finally prepared first compound represented by Formula 1. In detail, in the mixture, the molar ratio of the at least one A precursor to the at least one Cu precursor may be from about 0.7:1 to about 1:0.7, and for example, may be about 1:1. In this regard, the first compound represented by Formula 1 may be perovskite. For example, the composition may be spin-coated on the substrate. When the composition is provided by spin coating, the coating conditions may be selected in consideration of the composition, and for example, may include a coating speed from about 300 revolutions per minute (rpm) to about 6,000 rpm. In detail, the coating speed may be adjusted differently by dividing sections. For example, the coating speed may be maintained between about 300 rpm and about 700 rpm in a first section, and then, may be maintained between about 2,000 rpm and about 6,000 rpm in a second section. Meanwhile, the composition may be provided on the substrate by applying various other methods, including those known in the art. The solvent may be chosen from materials having high solubility to the at least one A-containing precursor, the at least one Cu-containing precursor, and the second compound represented by Formula 2. For example, the solvent may be dimethyl formamide, dimethyl sulfoxide (DMSO), γ-butyrolactone, N-methyl-2-pyrrolidone, or any combination thereof. However, embodiments of the present disclosure are not limited thereto. Next, an anti-solvent is added to the substrate on which the composition is provided to crystallize the composition. For example, when the composition is provided on the substrate by spin coating, the composition may be spin-coated first, and then, the anti-solvent may be added dropwise or sprayed while continuously rotating the substrate. The anti-solvent may be chosen from materials having high solubility to the at least one A precursor, the at least one Cu precursor, and the second compound represented by Formula 2. For example, the anti-solvent may be diethyl ether, toluene, α-terpineol, hexyl carbitol (diethylene glycol hexyl ether), butyl carbitol acetate (diethylene glycol n-butyl ether acetate), hexyl cellosolve (ethylene glycol monohexyl ether), butyl cellosolve acetate (ethylene glycol n-butyl ether acetate), or any combination thereof. However, embodiments of the present disclosure are not limited thereto. In detail, the anti-solvent may be diethyl ether. Next, by heat treatment, the solvent and the anti-solvent may be removed. For example, the heat treatment conditions may be selected within a time range from 5 minutes to 2 hours and a temperature range from 50° C. to 200° C., in consideration of the composition of the mixture. In detail the heat treatment conditions may be within a time range from 10 minutes to 20 minutes and a temperature range from 100° C. to 150° C. The A in the A precursor may be the same as described in connection with A in Formula 1 above. For example, the A precursor may be a halide of A (e.g., (A)(X)), and the Cu precursor may be a Cu halide (e.g., Cu(X)2). In (A)(X) and Cu(X)2, A and X may each be the same as described in connection with Formula 1 above. Light-Emitting Device According to one or more embodiments, a light-emitting device1includes: a first electrode110; a second electrode190facing the first electrode110; an emission layer150between the first electrode110and the second electrode190, wherein the emission layer150includes the luminescent material. The structure of the light-emitting device1will be described with reference toFIG.1.FIG.1is a schematic cross-sectional view of the light-emitting device1according to one or more embodiments. Although not illustrated inFIG.1, a substrate may be additionally located under or beneath the first electrode110(away from the emission layer150) and/or on or above the second electrode190(away from the emission layer150). For use as the substrate, any substrate that is used in the art of light-emitting devices may be used, and for example the substrate may be a glass substrate or a transparent plastic substrate, each having excellent mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and water resistance. The first electrode110may be an anode to which a positive (+) voltage is applied, and the second electrode190may be a cathode to which a negative (−) voltage is applied. In one or more embodiments, the first electrode110may be a cathode, and the second electrode190may be an anode. For convenience, one or more embodiments will be described assuming that the first electrode110is an anode and the second electrode190is a cathode. The first electrode110may be formed by depositing or sputtering a material for forming the first electrode110on the substrate. The first electrode110may be a reflective electrode, a semi-reflective electrode, or a transmissive electrode. In one or more embodiments, the first electrode110may be variously modified. For example, to obtain a bottom emission type light-emitting device, the first electrode110may be a semi-transmissive electrode or a transmissive electrode, and to obtain a top emission type light-emitting device, the first electrode110may be a reflective electrode. The first electrode110may have a single-layered structure or a multi-layered structure including two or more layers. The material for forming the first electrode110may include materials with a high work function to facilitate hole injection. In one or more embodiments, the material for forming the first electrode110may include indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide, tin oxide (SnO2), zinc oxide (ZnO), or gallium oxide. In one or more embodiments, the material for forming the first electrode110may include at least one of magnesium (Mg), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), and magnesium-silver (Mg—Ag). The second electrode190opposite to and facing the first electrode110may be provided. The second electrode190may be a reflective electrode, a semi-reflective electrode, or a transmissive electrode. In one or more embodiments, the second electrode190may be variously modified. For example, to obtain a bottom emission type light-emitting device, the second electrode190may be a semi-transmissive electrode or a transmissive electrode, and to obtain a top emission type light-emitting device, the second electrode190may be a reflective electrode. The second electrode190may have a single-layered structure or a multi-layered structure including two or more layers. The second electrode190may include at least one of a metal, an alloy, and an electrically conductive compound, each of which has a relatively low work function. In one or more embodiments, a material for forming the second electrode190may include at least one of Li, Mg, Al, Al—Li, Ca, gallium (Ga), Mg—In, and Mg—Ag. For example, the material for forming the second electrode190may be ITO or IZO. The emission layer150may include a luminescent material represented by Formula 1 above. In the emission layer150, electrons and holes transferred by the voltage supplied by the first electrode110and the second electrode190may be combined together. The electrons and holes are combined together to produce excitons, and then the excitons transition from the excited state to the ground state, thereby emitting light. The light-emitting device1may have high color purity, high current efficiency, and high quantum efficiency, due to the inclusion of the luminescent material represented by Formula 1 above. The luminescent material represented by Formula 1 may be the same as described above. The luminescent material may be present in a substantially uniform concentration in the emission layer150, a uniform concentration in the emission layer150, or may have a concentration gradient in the emission layer150. When the light-emitting device1is a full color light-emitting device, the light-emitting device1may include an emission layer that emits light of a different color for each sub-pixel. In one or more embodiments, the emission layer may be patterned, for each subpixel, as a first color emission layer, a second color emission layer, and a third color emission layer. When at least one emission layer among the first color emission layer, the second color emission layer, and the third color emission layer may necessarily include the luminescent material. In one or more embodiments, a first color emission layer may be an emission layer that includes the luminescent material, and a second color emission layer and a third color emission layer may be organic emission layers that include different organic compounds from each other. In this regard, the first color to the third color may be different colors from each other, and for example, the first color to the third color may have different maximum luminescence wavelengths from each other. For example, the first color to the third color may be white when combined with each other. The emission layer may be variously modified, and in one or more embodiments, the emission layer may further include a fourth color emission layer, and at least one emission layer among the first color emission layer to the fourth color emission layer may be an emission layer including the luminescent material, and the other emission layers may be organic emission layers that include different organic compounds from each other. Here, the first color to the fourth color are different colors, and for example, the first color to the fourth color may have different maximum luminescence wavelengths from each other. For example, the first color to the fourth color may be white when combined with each other. In one or more embodiments, the light-emitting device may have a stacked structure in which two or more emission layers emitting light of different colors from each other contact each other or are separated from each other. The emission layer may be variously modified, and for example, at least one emission layer among the two or more emission layers may be an emission layer including the luminescent material, and the remaining emission layers may each be an organic emission layer including an organic compound. The emission layer150may further include, in addition to the luminescent material represented by Formula 1, organic compounds, other inorganic compounds, an organic/inorganic composite compound. However, embodiments of the present disclosure are not limited thereto. A thickness of the emission layer150may be from about 10 Å to about 200 Å, for example, about 50 Å to about 100 Å. When the thickness of the emission layer150is within the range, excellent light-emission characteristics may be obtained without a substantial increase in driving voltage. The light-emitting device1may further include an auxiliary layer between the first electrode110and the emission layer150, between the second electrode190and the emission layer150, or the light-emitting device1may further include an auxiliary layer between the first electrode110and the emission layer150and between the second electrode190and the emission layer150to improve device characteristics, such as luminescence efficiency, by adjusting the charge carrier balance inside the device. For example, the light-emitting device1may further include a hole transport region between the first electrode110and the emission layer150and an electron transport region between the second electrode190and the emission layer150. The hole transport region may serve to inject and/or transport holes from the first electrode110to the emission layer150. In addition, the hole transport region may also compensate for an optical resonance distance according to a wavelength of light emitted from the emission layer, and thus, efficiency of a formed organic light-emitting device may be improved. The hole transport region may include at least one of a hole injection layer, a hole transport layer, or an electron control layer. The hole transport region may have a single-layered structure or a multi-layered structure including two or more layers. For example, the hole transport region may include only either a hole injection layer or a hole transport layer. In one or more embodiments, the hole transport region may have a hole injection layer/hole transport layer structure or a hole injection layer/hole transport layer/electron control layer structure, wherein, for each structure, each layer is sequentially stacked in this stated order from the first electrode110. The hole transport region may include, for example, at least one of 1,3-bis(9-carbazolyl)benzene (mCP), 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP), 3,3-bis(carbazol-9-yl)biphenyl (mCBP), 4,4′,4″-tris[phenyl(m-tolyl)amino]triphenylamine (m-MTDATA), TDATA, 2-TNATA, N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB), β-NPB, N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD), spiro-TPD, spiro-NPB, methylated-NPB, TAPC, HMTPD, tris(4-carbazoyl-9-ylphenyl)amine (TCTA), polyaniline/dodecylbenzene sulfonic acid (Pani/DBSA), poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT/PSS), poly(9,9-dioctyl-fluorene-co-N-(4-butylphenyl)-diphenylamine) (TFB), polyarylamine, poly(N-vinylcarbazole) (PVK), polypyrrole, polyaniline/camphor sulfonic acid (Pani/CSA), or (polyaniline)/poly(4-styrenesulfonate) (Pani/PSS). However, embodiments of the present disclosure are not limited thereto: A thickness of the hole transport region may be determined in consideration of the wavelength of light emitted by the emission layer150, and the driving voltage and current efficiency of the light-emitting device1. In one or more embodiments, the thickness of the hole transport region may be from about 10 nm to about 1,000 nm, and in one or more embodiments, the thickness of the hole transport region may be from about 10 nm to about 100 nm. When the hole transport region includes both a hole injection layer and a hole transport layer, a thickness of the hole injection layer may be from about 10 nm to about 200 nm, and a thickness of the hole transport layer may be from about 5 nm to about 100 nm. The hole transport region may further include, in addition to these materials, a p-dopant for the improvement of conductive properties. The p-dopant may be homogeneously or non-homogeneously (e.g., heterogeneously) dispersed in the hole transport region. The p-dopant may be at least one of a quinone derivative, a metal oxide, or a cyano group-containing compound, but embodiments of the present disclosure are not limited thereto. Non-limiting examples of the p-dopant are a quinone derivative, such as tetracyanoquinodimethane (TCNQ) or 2,3,5,6-tetrafluoro-tetracyano-1,4-benzoquinonedimethane (F4-TCNQ); a metal oxide, such as a tungsten oxide or a molybdenum oxide; and a cyano group-containing compound, such as dipyrazino[2,3-f:2′,3′-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HAT-CN), but embodiments of the present disclosure are not limited thereto. The electron transport region may inject and/or transport electrons from the second electrode190to the emission layer150. In addition, the electron transport region may also compensate for an optical resonance distance according to a wavelength of light emitted from the emission layer, and thus, efficiency of a formed organic light-emitting device may be improved. The electron transport region may include at least one of an electron injection layer, an electron transport layer, or a charge control layer. The electron transport region may have a single-layered structure or a multi-layered structure including two or more layers. In one or more embodiments, the electron transport region may include only either an electron injection layer or an electron transport layer. In one or more embodiments, the hole transport region may have a stacked structure of an electron transport layer/electron injection layer or a charge control layer/electron transport layer/electron injection layer, wherein, for each structure, each layer is sequentially stacked in this stated order from the emission layer150. The electron transport region may include, for example, at least one of Alq3, bathocuproine (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), bis(2-methyl-8-quinolinolato-N1,O8)-(1,1′-biphenyl-4-olato)aluminum (BAlq), 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ), 4-(naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole (NTAZ) bis(10-hydroxybenzo[h]quinolinato)beryllium (Bebq2), B3PYMPM, TPBI, 3TPYMB, BmPyPB, TmPyPB, BSFM, PO-T2T, or PO15, but embodiments of the present disclosure are not limited thereto. In one or more embodiments, the electron transport layer and/or the charge control layer may include at least one of these compounds, but embodiments of the present disclosure are not limited thereto. In one or more embodiments, the electron injection layer may include at least one of an alkali metal, an alkaline earth metal, a rare earth metal, a compound including an alkali metal, a compound including an alkaline earth-meta, a compound including a rare earth metal, an alkali metal complex, an alkaline earth-metal complex, or a rare earth metal complex, or the electron injection layer may further include the above-described organic compound. However, embodiments of the present disclosure are not limited thereto. In one or more embodiments, the electron injection layer may include at least one of LiF, NaF, CsF, KF, Li2O, Cs2O, K2O, BaO, SrO, CaO, or 8-quinolinolato lithium (LiQ), or the electron injection layer may further include the above-mentioned organic compound. However, embodiments of the present disclosure are not limited thereto. A thickness of the electron transport region may be determined in consideration of the wavelength of light emitted by the emission layer150, and the driving voltage and the current efficiency of the light-emitting device1. In one or more embodiments, the thickness of the electron transport region may be from about 1 nm to about 1,000 nm, and in one or more embodiment, may be from about 1 nm to about 200 nm. When the electron transport region includes both an electron injection layer and an electron transport layer, a thickness of the electron injection layer may be from about 1 nm to about 50 nm, and a thickness of the electron transport layer may be from about 5 nm to about 100 nm. The charge control layer may be included to the adjust charge injection balance at an interface between a layer including an organic compound (e.g., a hole transport layer, an electron transport layer, etc.) and a layer including an inorganic compound (e.g., an emission layer). The charge control layer may include, for example, at least one of poly(methyl methacrylate) (PMMA), polyimide (PI), polyvinyl alcohol (PVA), a combination thereof, or a polymer compound such as a copolymer of these materials. However, embodiments of the present disclosure are not limited thereto. Due to the inclusion of the charge control layer, the charge injection balance of the light-emitting device1may be improved, thereby obtaining increased external quantum efficiency. Furthermore, when the charge control layer is directly adjacent to the emission layer150, the emission layer150may be made flat, thereby obtaining lowered driving voltage of the light-emitting device1. In one or more embodiments, the light-emitting device1may further include a hole transport region between the first electrode110and the emission layer150, an electron transport region between the emission layer150and the second electrode190, or the light-emitting device1may further include a hole transport region between the first electrode110and the emission layer150and an electron transport region between the emission layer150and the second electrode190. In one or more embodiments, the light-emitting device1may include the charge control layer between the first electrode110and the emission layer150, between the emission layer150and the second electrode190, or the light-emitting device1may include the charge control layer between the first electrode110and the emission layer150and between the emission layer150and the second electrode190. Each layer constituting the light-emitting device1may be formed by using suitable methods, such as vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, and the like. When the hole injection layer is formed by vacuum deposition, the deposition conditions may vary according to a material that is used to form the hole injection layer, and the structure and thermal characteristics of the hole injection layer. For example, the deposition conditions may include a deposition temperature of about 100° C. to about 500° C., a vacuum pressure of about 10−8torr to about 10−3torr, and a deposition rate of about 0.01 Å/sec to about 100 Å/sec. However, the deposition conditions are not limited thereto. When the hole injection layer is formed by spin coating, the coating conditions may vary according to the material used to form the hole injection layer, and the structure and thermal properties of the hole injection layer. For example, a coating speed may be from about 2,000 rpm to about 5,000 rpm, and a temperature at which a heat treatment is performed to remove a solvent after coating may be from about 80° C. to about 200° C. However, the coating conditions are not limited thereto. Hereinbefore, the organic light-emitting device1has been described with reference toFIG.1, but embodiments of the present disclosure are not limited thereto. Hereinafter, a luminescent material, a method of preparing the luminescent material, and a light-emitting device including the luminescent material according to one or more embodiments are described in detail with reference to Synthesis Examples and Examples. However, these examples are for illustrative purposes only and are not intended to limit the content and scope of the present disclosure. The wording “B was used instead of A” as used in describing Synthesis Examples means that an amount of “A” used was identical to an amount of “B” that was used, in terms of a molar equivalent. EXAMPLES Analysis Method (1) Measurement of Photoluminescence (PL) Spectrum A luminescent material was formed on a glass substrate to form a film having a thickness of about 200 nm. The film was excited under a nitrogen atmosphere with excitation-light having a wavelength of 365 nm, and then, a PL spectrum was measured at room temperature by using an ISC PC1 spectrofluorometer. (2) X-Ray Diffraction (XRD) Analysis Samples were analyzed within a range from 10° to 50° at a scanning rate of 4°/minute in a 2θ scan mode by using X'pert (available from Philips Company) which is an X-ray diffractometer equipped with a Cu target. Synthesis Example: Preparation of Luminescent Material Mixtures 1 to 4 and Comparative Mixture 1 (including, as shown in Table 1 below, an A precursor, a Cu precursor, a second compound, and a solvent at a specified molar ratio and at a specified wt %) were spin-coated on a glass substrate at a rate of 500 rpm for 10 minutes, and then at a rate from 2,000 rpm to 4,000 rpm for 30 seconds. Here, from the time of 25 seconds of the spin coating, diethyl ether was added dropwise at a rate of 2 mL/second for 0.5 seconds. The resulting coated glass substrate was subjected to heat treatment at a temperature of 100° C. for 20 minutes, and then at a temperature of 150° C. for 10 minutes, thereby preparing films having a thickness of about 200 nm according to Examples 1 to 4 and Comparative Example 1 (see Table 2 below). TABLE 1Molar ratio(A precursor:CuACuSecondprecursor:secondConcentrationSampleprecursorprecursorcompoundSolventcompound)(wt %)Mixture 1CsBrCuBr2PhenylamineDMSO1:0.7:0.230Mixture 2CsBrCuBr2PhenylamineDMSO1:0.7:0.429Mixture 3CsBrCuBr2PhenylamineDMSO1:0.7:0.828Mixture 4CsBrCuBr2PhenylamineDMSO1:0.7:1.526ComparativeCsBrCuBr2—DMSO1:0.7:031Mixture 1 TABLE 2Final product(luminescentPEA*Samplematerial)Final product(wt %)Mixture 1Example 1CsCuBr3+ PEA11Mixture 2Example 2CsCuBr3+ PEA22Mixture 3Example 3CsCuBr3+ PEA45Mixture 4Example 4CsCuBr3+ PEA90ComparativeComparativeCsCuBr30Mixture 1Example 1*PEA is phenylethylamine. Experimental Example 1: XRD Analysis XRD analysis was performed on the films of Examples 1, 3, and 4 and Comparative Example 1, and the results are shown inFIG.2. Referring toFIG.2, it was confirmed that, in the films of Examples 1, 3, and 4, CsCuBr3had a crystal lattice and PEA was not included in the crystal lattice and only involved in the stabilization at the boundary with the crystal lattice. Experimental Example 2: Evaluation of Maximum Luminescence Wavelength (PL Max) and Full Width at Half Maximum (FWHM) PL spectra were measured for the films of Examples 1 to 4 and Comparative Example 1, and the results are shown in Table 3 andFIG.3. TABLE 3Compound No.PL max (nm)FWHM (nm)Example 145586Example 245583Example 345680Example 447195Comparative——Example 1 Referring to Table 3 andFIG.3, it was confirmed that the film of Comparative Example 1 did not emit light under these conditions, whereas the films of Examples 1 to 4 emitted blue light and had relatively narrow FWHM. According to the one or more embodiments, a luminescent material may have improved luminescence characteristics, such as relatively small FWHM value or relatively high luminescence efficiency, and accordingly, a light-emitting device including the luminescent material may have improved color purity and/or improved efficiency. It should be understood that embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features, aspects, or advantages within each embodiment should be considered as available for other similar features or aspects in other embodiments. While one or more embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope as defined by the following claims. | 53,516 |
11944002 | DETAILED DESCRIPTION Reference will now be made in more detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, the embodiments are merely described below, by referring to the figures, to explain aspects of embodiments of the present description. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression “at least one of a, b and c” indicates only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof. Expressions such as “at least one of,” “one of,” and “selected from,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list. Further, the use of “may” when describing embodiments of the present invention refers to “one or more embodiments of the present invention.” An embodiment of the present disclosure provides an organic light-emitting device including: a first electrode; a second electrode facing the first electrode; light-emitting units in the number of m between the first electrode and the second electrode; and charge generation layers in the number of m−1 respectively between each adjacent pair of light-emitting units among the light-emitting units in the number of m, each charge generation layer including an n-type charge generation layer and a p-type charge generation layer, wherein m is an integer of 3 or more, the light-emitting units in the number of m each include a hole transport region, an emission layer, and an electron transport region, which are sequentially stacked, the electron transport regions in the number of m included in the light-emitting units in the number of m each include an electron transport material, and the electron transport material included in at least one electron transport region among the electron transport regions in the number of m is different from the electron transport material included in at least one electron transport region among the other electron transport regions. FIG.1is a schematic cross-sectional view of an organic light-emitting device10according to an embodiment. Referring toFIG.1, the organic light-emitting device10may include: a first electrode110; a second electrode190facing the first electrode110; light-emitting units155-1,155-2, and155-3in the number of m (here, m=3) stacked between the first electrode110and the second electrode190; and charge generation layers154-1and154-2in the number of m−1 (here, m−1=2) respectively between each adjacent pair of light-emitting units among the light-emitting units155-1,155-2, and155-3in the number of m, and each charge generation layer may include an n-type charge generation layer and a p-type charge generation layer. The light-emitting units are not particularly limited as long as the light-emitting units have a function capable of emitting light. For example, the light-emitting unit may include one or more emission layers. In some embodiments, the light-emitting unit may further include, in addition to the one or more emission layers, an organic layer. The organic light-emitting device10may include the stacked light-emitting units155-1,155-2, and155-3in the number of m, and m may be an integer of 3 or more. m, which is the number of light-emitting units, may be any suitable integer, and the upper limit of the number is not particularly limited. For example, the organic light-emitting device10may include three, four, five, or six light-emitting units. The organic light-emitting device10may include the charge generation layers154-1and154-2respectively between each adjacent pair of light-emitting units (each two adjacent light-emitting units) among the light-emitting units155-1,155-2, and155-3in the number of m. The terms “neighboring” or “adjacent” refer to an arrangement relationship between the closest layers among the layers mentioned as the neighboring or adjacent layers. For example, two adjacent light-emitting units refer to an arrangement relationship between two light-emitting units disposed closest to each other among the plurality of light-emitting units. In some cases, the term “adjacent” refers to a case in which two layers are in physical contact with each other, and in some embodiments, another layer that is not mentioned may be disposed between the two adjacent layers. For example, the light-emitting unit adjacent to the second electrode refers to the light-emitting unit closest to the second electrode among the plurality of light-emitting units. Although the second electrode and the light-emitting unit may be in physical contact with each other, layers other than the light-emitting unit may be present between the second electrode and the light-emitting unit. For example, an electron transport layer may be between the second electrode and the light-emitting unit. In some embodiments, a charge generation layer may be between two adjacent light-emitting units. The charge generation layer is a layer that acts as a cathode by generating electrons with respect to one light-emitting unit among the two adjacent light-emitting units, and acts as an anode by generating holes with respect to the other light-emitting unit. The charge generating layer is not directly connected to the electrode and separates the adjacent light-emitting units. The organic light-emitting device10including the light-emitting units in the number of m may include the charge generation layers in the number of m−1. The charge generation layers154-1and154-2may each include an n-type charge generation layer and a p-type charge generation layer. The n-type charge generation layer and the p-type charge generation layer may be in direct contact with each other to form an NP junction. In the NP junction, electrons and holes may be simultaneously (or concurrently) generated between the n-type charge generation layer and the p-type charge generation layer. The generated electrons may be transferred to one light-emitting unit among the two adjacent light-emitting units through the n-type charge generation layer. The generated holes may be transferred to the other light-emitting unit among the two adjacent light-emitting units through the p-type charge generation layer. Also, because the charge generation layers154-1and154-2each include a single n-type charge generation layer and a single p-type charge generation layer, the organic light-emitting device10including the charge generation layers154-1and154-2in the number of m−1 may include n-type charge generation layers in the number of m−1 and p-type charge generation layers in the number of m−1. The term “n-type” refers to n-type semiconductor characteristics, that is, characteristics of injecting or transporting electron. The term “p-type” refers to p-type semiconductor characteristics, that is, characteristics of injecting or transporting holes. The light-emitting units155-1,155-2, and155-3in the number of m may respectively include hole transport regions151-1,151-2, and151-3, emission layers152-1,152-2, and152-3, and electron transport regions153-1,153-2, and153-3, which are sequentially positioned. The electron transport regions153-1,153-2, and153-3in the number of m included in the light-emitting units155-1,155-2, and155-3in the number of m may each include an electron transport material. The electron transport material included in at least one electron transport region among the electron transport regions153-1,153-2, and153-3in the number of m may be different from the electron transport material included in at least one electron transport region among the other (remaining) electron transport regions. In one embodiment, the mthelectron transport region153-3among the electron transport regions153-1,153-2, and153-3in the number of m may be between the mthemission layer152-3and the second electrode190, and the electron transport material included in the mthelectron transport region153-3may be different from the electron transport material included in at least one electron transport region among the other electron transport regions153-1and153-2. In one embodiment, the electron transport materials in the number of m included in the electron transport regions153-1,153-2, and153-3in the number of m may each independently be selected from a first compound, a second compound, and a third compound, The first compound may be represented by Formula 1, the second compound may be represented by Formula 2, and the third compound may be represented by Formula 3: In Formula 1, X1may be O or S, L1to L3may each independently be a substituted or unsubstituted C5-C60carbocyclic group or a substituted or unsubstituted C1-C60heterocyclic group, a1 to a3 may each independently be an integer selected from 0 to 5, Ar1to Ar3may each independently be a substituted or unsubstituted C5-C60carbocyclic group or a substituted or unsubstituted C1-C60heterocyclic group, in Formula 2, A11and A12may each independently be a C5-C60carbocyclic group or a C1-C60heterocyclic group, R11and R12may each independently be selected from a group represented by *-(L13)a13-Ar13, hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a substituted or unsubstituted C1-C60alkyl group, a substituted or unsubstituted C2-C60alkenyl group, a substituted or unsubstituted C2-C60alkynyl group, a substituted or unsubstituted C1-C60alkoxy group, a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, —Si(Q1)(Q2)(Q3), —N(Q1)(Q2), —B(Q1)(Q2), —C(═O)(Q1), —S(═O)2(Q1), and —P(═O)(Q1)(Q2), R11and R12may optionally be linked to each other to form a substituted or unsubstituted C5-C60carbocyclic group or a substituted or unsubstituted C1-C60heterocyclic group, L11to L13may each independently be a substituted or unsubstituted C5-C60carbocyclic group or a substituted or unsubstituted C1-C60heterocyclic group, a11 to a13 may each independently be an integer selected from 0 to 5, Ar11to Ar13may each independently be a substituted or unsubstituted C5-C60carbocyclic group or a substituted or unsubstituted C1-C60heterocyclic group, b11 and b12 may each independently be an integer selected from 1 to 5, c11 and c12 may each independently be an integer selected from 0 to 20, in Formula 3, A21may be air electron-depleted nitrogen-containing ring, L21may be a substituted or unsubstituted C5-C60carbocyclic group or a substituted or unsubstituted C1-C60heterocyclic group, a21 may be an integer selected from 0 to 5, Ar21may be a substituted or unsubstituted C5-C60carbocyclic group or a substituted or unsubstituted C1-C60heterocyclic group, b21 may be an integer selected from 1 to 5, c21 may be an integer selected from 0 to 20, at least one substituent of the substituted C5-C60carbocyclic group, the substituted C1-C60heterocyclic group, the substituted C1-C60alkyl group, the substituted C2-C60alkenyl group, the substituted C2-C60alkynyl group, the substituted C1-C60alkoxy group, the substituted C3-C10cycloalkyl group, the substituted C1-C10heterocycloalkyl group, the substituted C3-C10cycloalkenyl group, the substituted C1-C10heterocycloalkenyl group, the substituted C6-C60aryl group, the substituted C6-C60aryloxy group, the substituted C6-C60arylthio group, the substituted C1-C60heteroaryl group, the substituted monovalent non-aromatic condensed polycyclic group, and the substituted monovalent non-aromatic condensed heteropolycyclic group may be selected from: deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, and a C1-C60alkoxy group; a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, and a C1-C60alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —Si(Q11)(Q12)(Q13), —B(Q11)(Q12), —C(═O)(Q11), —S(═O)2(Q11), and —P(═O)(Q11)(Q12); a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, a biphenyl group, and a terphenyl group; a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, a biphenyl group, and a terphenyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, a biphenyl group, a terphenyl group, —Si(Q21)(Q22)(Q23), —B(Q21)(Q22), —C(═O)(Q21), —S(═O)2(Q21), and —P(═O)(Q21)(Q22); and —Si(Q31)(Q32)(Q33), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)2(Q31), and —P(═O)(Q31)(Q32), Q1to Q3, Q11to Q13, Q21to Q23, and Q31to Q33may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, a biphenyl group, and a terphenyl group, and * indicates a binding site to a neighboring atom. The term “π electron-depleted nitrogen-containing ring” as used herein may be understood by referring to the description presented in connection with an electron transport region described below. For example, L1to L3, L11to L13, and L21may each independently be selected from: a benzene group, a pentalene group, an indene group, a naphthalene group, an azulene group, a heptalene group, an indacene group, an acenaphthalene group, a fluorene group, a spiro-bifluorene group, a spiro-benzofluorene-fluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pyrrole group, a thiophene group, a furan group, a silole group, an imidazole group, a pyrazole group, a thiazole group, an isothiazole group, an oxazole group, an isoxazole group, a pyridine group, a pyrazine group, a pyrimidine group, a pyridazine group, a triazine group, a benzofuran group, a benzothiophene group, a benzosilole group, a dibenzosilole group, a quinoline group, an isoquinoline group, a benzimidazole group, an imidazopyridine group, an imidazopyrimidine group, a carbazole group, a dibenzofuran group, a dibenzothiophene group, and a quinazoline group; a benzene group, a pentalene group, an indene group, a naphthalene group, an azulene group, a heptalene group, an indacene group, an acenaphthalene group, a fluorene group, a spiro-bifluorene group, a spiro-benzofluorene-fluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pyrrole group, a thiophene group, a furan group, a silole group, an imidazole group, a pyrazole group, a thiazole group, an isothiazole group, an oxazole group, an isoxazole group, a pyridine group, a pyrazine group, a pyrimidine group, a pyridazine group, a triazine group, a benzofuran group, a benzothiophene group, a benzosilole group, a dibenzosilole group, a quinoline group, an isoquinoline group, a benzimidazole group, an imidazopyridine group, an imidazopyrimidine group, a carbazole group, a dibenzofuran group, a dibenzothiophene group, and a quinazoline group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a pyrrolyl group, a thienyl group, a furanyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a quinolinyl group, an isoquinolinyl group, a benzofuranyl group, a benzothienyl group, a silolyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a benzosilolyl group, a dibenzosilolyl group, —Si(Q31)(Q32)(Q33), —N(Q31)(Q32), and —B(Q31)(Q32), and Q31to Q33may each independently be selected from a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, and a pyridinyl group. For example, L1to L3, L11to L13, and L21may each independently be selected from groups represented by Formulae 4-1 to 4-29: In Formulae 4-1 to 4-29, Y1may be selected from C(Z3)(Z4), N(Z5), Si(Z6)(Z7), O, and S, Z1to Z7may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a pyrenyl group, a chrysenyl group, a pyrrolyl group, a thienyl group, a furanyl group, a silolyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a benzofuranyl group, a benzothienyl group, a benzosilolyl group, a dibenzosilolyl group, and —Si(Q31)(Q32)(Q33), Q31to Q33may each independently be selected from C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, and a pyridinyl group, d2 may be an integer selected from 0 to 2, d3 may be an integer selected from 0 to 3, d4 may be an integer selected from 0 to 4, d5 may be an integer selected from 0 to 5, d6 may be an integer selected from 0 to 6, d8 may be an integer selected from 0 to 8, and * and *′ each indicate a binding site to a neighboring atom. For example, Ar1to Ar3, Ar11to Ar13, and Ar21may each independently be selected from: a benzene group, a pentalene group, an indene group, a naphthalene group, an azulene group, a heptalene group, an indacene group, an acenaphthalene group, a fluorene group, a spiro-bifluorene group, a spiro-benzofluorene-fluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pyrrole group, a thiophene group, a furan group, a silole group, an imidazole group, a pyrazole group, a thiazole group, an isothiazole group, an oxazole group, an isoxazole group, a pyridine group, a pyrazine group, a pyrimidine group, a pyridazine group, a triazine group, a benzofuran group, a dibenzofuran group, a benzothiophene group, a benzosilole group, a dibenzosilole group, a quinoline group, an isoquinoline group, a quinazoline group, a benzimidazole group, an imidazopyridine group, and an imidazopyrimidine group; and a benzene group, a pentalene group, an indene group, a naphthalene group, an azulene group, a heptalene group, an indacene group, an acenaphthalene group, a fluorene group, a spiro-bifluorene group, a spiro-benzofluorene-fluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pyrrole group, a thiophene group, a furan group, a silole group, an imidazole group, a pyrazole group, a thiazole group, an isothiazole group, an oxazole group, an isoxazole group, a pyridine group, a pyrazine group, a pyrimidine group, a pyridazine group, a triazine group, a benzofuran group, a dibenzofuran group, a benzothiophene group, a benzosilole group, a dibenzosilole group, a quinoline group, an isoquinoline group, a quinazoline group, a benzimidazole group, an imidazopyridine group, and an imidazopyrimidine group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a pyrrolyl group, a thienyl group, a furanyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a quinolinyl group, an isoquinolinyl group, a benzofuranyl group, a benzothienyl group, —Si(Q31)(Q32)(Q33), —N(Q31)(Q32) and —B(Q31)(Q32), and Q31to Q33may each independently be selected from a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, and a pyridinyl group. For example, A11and A12may each independently be selected from: a benzene group, a pentalene group, an indene group, a naphthalene group, an azulene group, a heptalene group, an indacene group, an acenaphthalene group, a fluorene group, a spiro-bifluorene group, a spiro-benzofluorene-fluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pyrrole group, a thiophene group, a furan group, a silole group, an imidazole group, a pyrazole group, a thiazole group, an isothiazole group, an oxazole group, an isoxazole group, a pyridine group, a pyrazine group, a pyrimidine group, a pyridazine group, a triazine group, a benzofuran group, a benzothiophene group, a benzosilole group, a dibenzosilole group, a quinoline group, an isoquinoline group, a quinazoline group, a benzimidazole group, an imidazopyridine group, and an imidazopyrimidine group; and a benzene group, a pentalene group, an indene group, a naphthalene group, an azulene group, a heptalene group, an indacene group, an acenaphthalene group, a fluorene group, a spiro-bifluorene group, a spiro-benzofluorene-fluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pyrrole group, a thiophene group, a furan group, a silole group, an imidazole group, a pyrazole group, a thiazole group, an isothiazole group, an oxazole group, an isoxazole group, a pyridine group, a pyrazine group, a pyrimidine group, a pyridazine group, a triazine group, a benzofuran group, a benzothiophene group, a benzosilole group, a dibenzosilole group, a quinoline group, an isoquinoline group, a quinazoline group, a benzimidazole group, an imidazopyridine group, and an imidazopyrimidine group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a pyrrolyl group, a thienyl group, a furanyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a quinolinyl group, an isoquinolinyl group, a benzofuranyl group, a benzothienyl group, —Si(Q31)(Q32)(Q33), —N(Q31)(Q32), and —B(Q31)(Q32), and Q31to Q33may each independently be selected from a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, and a pyridinyl group. For example, A21may be selected from a pyridine group, a pyrimidine group, a pyrazine group, a triazine group, an aziridine group, an imidazole group, an indole group, an isoindole group, a purine group, a quinoline group, a quinazoline group, a phenothiazine group, an acridine group, a phenazine group, a phenanthroline group, a carbazole group, an oxadiazole group, a triazole group, an imidazole group, and a benzimidazole group. For example, in Formula 2, at least one selected from A11, A12, L11(s) in the number of a11, L12(s) in the number of a12, Ar11(s) in the number of b11, and Ar12(s) in the number of b12 may be selected from a pyridine group, a pyrimidine group, a pyrazine group, a triazine group, a quinoline group, and a quinazoline group. For example, the second compound may be represented by one of Formulae 2-1 and 2-2: In Formulae 2-1 and 2-2, Z11and Z12may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a pyrenyl group, a chrysenyl group, a pyrrolyl group, a thienyl group, a furanyl group, a silolyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a benzofuranyl group, a benzothienyl group, a benzosilolyl group, a dibenzosilolyl group, and —Si(Q31)(Q32)(Q33), Q31to Q33may each independently be selected from a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, and a pyridinyl group, e3 may be an integer selected from 0 to 3, and e10 may be an integer selected from 0 to 10. For example, the first compound may be selected from Compounds 1 to 17 below, and the second compound may be selected from Compounds 101 to 120 below: In one embodiment, i) one electron transport material among the electron transport materials in the number of m may be the second compound, and the other electron transport materials may each independently be the first compound; ii) one electron transport material among the electron transport materials in the number of m may be the first compound, and the other electron transport materials may each independently be the second compound; iii) each of the electron transport materials in the number of m may be the third compound, wherein one electron transport material among the electron transport materials may include a triazine group, and the other electron transport materials may each independently include a carbazole group; or iv) each of the electron transport materials in the number of m may be the third compound, wherein one electron transport material among the electron transport materials may include a carbazole group, and the other electron transport materials may each independently include a triazine group. In one embodiment, the mthelectron transport region153-3among the electron transport regions153-1,153-2, and153-3in the number of m may be disposed between the mthemission layer152-3and the second electrode190, and an absolute value of a lowest unoccupied molecular orbital (LUMO) energy level of the mthelectron transport region153-3may be in a range between an absolute value of a LUMO energy level of a host included in the mthemission layer152-3and an absolute value of a work function of an inorganic material included in the second electrode190. In one embodiment, the absolute value of the LUMO energy level of the mthelectron transport region153-3and the absolute value of the LUMO energy level of the host may satisfy Equation 1: ∥ELUMO_ETL(m)|−|ELUMO_Host∥≤0.2 eV. Equation 1 In Equation 1, |ELUMO_ETL(m)| is the absolute value of the LUMO energy level of the mthelectron transport region, and |ELUMO_Host| is the absolute value of the LUMO energy level of the host. For example, ∥ELUMO_ETL(m)|−|ELUMO_Host∥ may be about 0.1 eV or less For example, the absolute value of the LUMO energy level of the host may be in a range of about 2.5 eV to about 2.7 eV. In one embodiment, an nthcharge generation layer among the charge generation layers154-1and154-2in the number of m−1 may be disposed between the electron transport region153-1or153-2of the nthlight-emitting unit among the light-emitting units155-1,155-2, and155-3in the number of m and the hole transport region151-2or151-3of the (n+1)thlight-emitting unit, and n may be an integer selected from 1 to m−1. For example, an absolute value of a LUMO energy level of the electron transport region of the nthlight-emitting unit (nthelectron transport region)153-1or153-2and an absolute value of a LUMO energy level of nthcharge generation layer154-1or154-2may satisfy Equation 2: ∥ELUMO_ETL(n)|−|ELUMO_CGL(n)∥≤0.15 eV. Equation 2 In Equation 2, |ELUMO_ETL(n)| is the absolute value of the LUMO energy level of the electron transport region of the nthlight-emitting unit, and |ELUMO_CGL(n)| is the absolute value of the LUMO energy level of the nthcharge generation layer. For example, ∥ELUMO_ETL(n)|−|ELUMO_CGL(n)∥ may be about 0.1 eV or less. For example, the absolute value of the LUMO energy level of the charge generation layer may be in a range of about 2.5 eV to about 2.8 eV. FIG.2is a schematic cross-sectional view of an organic light-emitting device20according to another embodiment. As inFIG.1, the organic light-emitting device20ofFIG.2may include: a first electrode110; a second electrode190facing the first electrode110; light-emitting units in the number of m stacked between the first electrode110and the second electrode190; and charge generation layers in the number of m−1 respectively positioned between each adjacent pair of light-emitting units among the light-emitting units in the number of m, and each charge generation layer may include an n-type charge generation layer and a p-type charge generation layer. In the light-emitting units in the number of m, hole transport regions in the number of m may each independently include a hole injection layer, a hole transport layer, an electron blocking layer, or any combination thereof; and electron transport regions in the number of m may each independently include a hole blocking layer, an electron transport layer, an electron injection layer, a buffer layer, or any combination thereof. Referring toFIG.2, the hole transport regions in the number of m may respectively include hole injection layers151-1a,151-2a, and151-3aand hole transport layers151-1b,151-2b, and151-3b; and the electron transport regions in the number of m may respectively include buffer layers153-1a,153-2a, and153-3a, electron transport layers153-1b,153-2b, and153-3b, and an electron injection layer153-3c. For example, the charge generation layers in the number of m−1 may respectively include n-type charge generation layers154-1aand154-2ain the number of m−1 and p-type charge generation layers154-1band154-2bin the number of m−1. In the organic light-emitting device, m may be 3 or 4. In one embodiment, the first electrode may be an anode, the second electrode may be a cathode, the organic light-emitting device may further include: an mthlight-emitting unit between the first electrode and the second electrode; an (m−1)thlight-emitting unit between the first electrode and the mthlight-emitting unit; and an (m−1)thcharge generation layer between the mthlight-emitting unit and the (m−1)thlight-emitting unit, the mthlight-emitting unit may include an mthemission layer, the (m−1)thlight-emitting unit may include an (m−1)themission layer, the organic light-emitting device may further include an (m−1)thhole transport region between the first electrode and the (m−1)themission layer, the organic light-emitting device may further include an (m−1)thelectron transport region between the (m−1)themission layer and the (m−1)thcharge generation layer, the organic light-emitting device may further include an mthhole transport region between the (m−1)thcharge generation layer and the mthemission layer, the organic light-emitting device may further include an mthelectron transport region between the mthemission layer and the second electrode, an electron transport material included in the mthelectron transport region may be different from the electron transport material included in the (m−1)thelectron transport region, the hole transport regions may each include a hole injection layer, a hole transport layer, an electron blocking layer, or any combination thereof, and the electron transport regions may each include a hole blocking layer, an electron transport layer, an electron injection layer, a buffer layer, or any combination thereof. In one embodiment, maximum emission wavelengths of light emitted from the light-emitting units in the number of m may be identical to each other (or substantially the same). In one or more embodiments, the light-emitting units in the number of m may emit blue light having a maximum emission wavelength of about 440 nm or more and about 490 nm or less. In one or more embodiments, the maximum emission wavelength of light emitted from at least one light-emitting unit among the light-emitting units in the number of m may be different from the maximum emission wavelength of light emitted from at least one light-emitting unit among the other light-emitting units. For example, in an organic light-emitting device in which a first light-emitting unit and a second light-emitting unit are stacked, a maximum emission wavelength of light emitted from the first light-emitting unit may be different from a maximum emission wavelength of light emitted from the second light-emitting unit. In this case, emission layers in the first light-emitting unit and the second light-emitting unit may each independently have i) a single-layered structure including a single layer including a single material, ii) a single-layered structure including a single layer including a plurality of different materials, or iii) a multi-layered structure having a plurality of layers including a plurality of different materials. Therefore, light emitted from the first light-emitting unit or the second light-emitting unit may be single color light or mixed color light. In one or more embodiments, in an organic light-emitting device in which a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit are stacked, a maximum emission wavelength of light emitted from the first light-emitting unit may be identical to a maximum emission wavelength of light emitted from the second light-emitting unit, but may be different from a maximum emission wavelength of light emitted from the third light-emitting unit. In one embodiment, the maximum emission wavelength of the light emitted from the first light-emitting unit, the maximum emission wavelength of the light emitted from the second light-emitting unit, and the maximum emission wavelength of the light emitted from the third light-emitting unit may be different from each other. In a comparable organic light-emitting device having two light-emitting units, points at which electrons and holes are injected are different. Specifically, in the first light-emitting unit, holes are injected from an anode, and electrons are injected from a first charge generation layer. In the second light-emitting unit, holes are injected from a first charge generation layer, and electrons are injected from a cathode. In contrast, in the organic light-emitting device having the light-emitting units in the number of m or more (wherein m is 3 or more), according to one or more embodiments, in the light-emitting units disposed at both ends, electrons and holes are injected as in the comparable light-emitting device having the two light-emitting units, but in the light-emitting units in the number of m−2 inserted in the middle, both electrons and holes are injected from the charge generation layer. Referring toFIG.1, in the first light-emitting unit155-1, holes are injected from the first electrode110, for example, the anode, and electrons are injected from the first charge generation layer154-1. In this case, an amount (number) of electrons generated and injected from the first charge generation layer154-1is relatively small, as compared with a single-unit light-emitting device in which electrons are injected from a cathode and an electron transport region. This is because an absolute amount of charges generated in the charge generation layer is insufficient, and internal resistance (for example, an energy band bending difference due to Fermi level alignment) occurs in the process of transferring charges from the charge generation layer to the surrounding light-emitting unit. In contrast, in the case of the third light-emitting unit155-3, holes are injected from the second charge generation layer154-2, and electrons are injected from the second electrode190, for example, the cathode. Thus, charge injection balance is deteriorated, as compared with the single-unit light-emitting device. Because the organic light-emitting device according to one or more embodiments has a tandem structure including three or more light-emitting units, a current load flowing through each light-emitting unit is reduced so that luminescence efficiency and a lifespan are increased, as compared with the comparable organic light-emitting device having a tandem structure including two light-emitting units. Furthermore, in the organic light-emitting device according to one or more embodiments, because an electron transport region that is close to the cathode among the plurality of electron transport regions is different in composition from each of the other electron transport regions, it is possible to effectively (or suitably) control an amount of electrons and holes combined for each unit by adjusting an amount of electrons injected into the light-emitting unit. In some embodiments, the organic light-emitting device according to one or more embodiments may include, as the electron transport material, i) a compound having an aryl-anthracene structure including a phosphine oxide-based group or phosphine sulfide-based group, ii) a heteroring (heterocyclic) compound including a phosphine oxide-based group or phosphine sulfide-based group, or iii) a ring (cyclic) compound including a triazine and/or a pyrimidine group, or a compound including a heteroring (heterocyclic) core selected from a pyridine group, a pyrimidine group, a pyrazine group, a triazine group, an aziridine group, an imidazole group, an indole group, an isoindole group, a purine group, a quinoline group, a quinazoline group, a phenothiazine group, an acridine group, a phenazine group, a phenanthroline group, a carbazole group, an oxadiazole group, a triazole group, an imidazole group, and a benzimidazole group. In this manner, stable (or suitable) electron flow may be controlled, and luminescence efficiency in the emission layer may be effectively (or suitably) controlled. In some embodiments, in the organic light-emitting device according to one or more embodiments, because a difference between a LUMO energy level of the electron transport region contacting the charge generation layer and a LUMO energy level of the charge generation layer is limited to within ±0.15 eV, electrons may be efficiently injected into the emission layer, and accumulation of charges may be prevented or reduced, before electrons are injected into the emission layer, thereby effectively (or suitably) helping long-term reliability of the device (see e.g.,FIG.4). In some embodiments, in the organic light-emitting device according to one or more embodiments, because a difference between a LUMO energy level of the electron transport region contacting the cathode and a LUMO energy level of the host material in the emission layer is limited to within ±0.2 eV, electrons may be efficiently injected from the cathode to the emission layer, thereby securing effective (or suitable) injection characteristics. Another embodiment of the present disclosure provides a flat display apparatus including: a thin-film transistor including a source electrode, a drain electrode, and an activation layer; and the organic light-emitting device, wherein the first electrode of the organic light-emitting device is in electrical connection with one of the source electrode and the drain electrode the thin-film transistor. The term “an organic layer” as used herein refers to a single layer and/or a plurality of layers between the first electrode and the second electrode of an organic light-emitting device. A material included in the “organic layer” is not limited to an organic material. Hereinafter, the structure of each of the organic light-emitting devices10and20according to embodiments and a method of manufacturing the same will be described in connection withFIGS.1and2. First Electrode110 Referring toFIGS.1and2, a substrate may be additionally positioned (included) under the first electrode110or above the second electrode190. The substrate may be a glass substrate and/or a plastic substrate, each having excellent (suitable) mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and/or water resistance. The first electrode110may be formed by depositing or sputtering a material for forming the first electrode110on the substrate. When the first electrode110is an anode, the material for forming the first electrode110may be selected from materials with a high work function to facilitate hole injection. The first electrode110may be a reflective electrode, a semi-transmissive electrode, or a transmissive electrode. When the first electrode110is a transmissive electrode, a material for forming the first electrode110may be selected from indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), and any combinations thereof, but embodiments of the present disclosure are not limited thereto. In one or more embodiments, when the first electrode110is a semi-transmissive electrode or a reflective electrode, a material for forming a first electrode110may be selected from magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), magnesium-silver (Mg—Ag), and any combinations thereof, but embodiments of the present disclosure are not limited thereto. The first electrode110may have a single-layered structure, or a multi-layered structure including two or more layers. For example, the first electrode110may have a three-layered structure of ITO/Ag/ITO, but the structure of the first electrode110is not limited thereto. Organic Layer150 The organic layer150may be on the first electrode110. The organic layer150may include light-emitting units155-1,155-2, and155-3. The organic layer150may further include hole transport regions151-1,151-2, and151-3in the light-emitting units155-1,155-2, and155-3, respectively, and electron transport regions153-1,153-2, and153-3in the light-emitting units155-1,155-2, and155-3, respectively. Hole Transport Region151-1,151-2, or151-3in Organic Layer150 The hole transport region151-1,151-2, or151-3may have i) a single-layered structure including a single layer including a single material, ii) a single-layered structure including a single layer including a plurality of different materials, or iii) a multi-layered structure having a plurality of layers including a plurality of different materials. The hole transport region151-1,151-2, or151-3may include at least one layer selected from a hole transport layer151-1b,151-2b, or151-3b, a hole injection layer151-1a,151-2a, or151-3a, an emission auxiliary layer, and an electron blocking layer. For example, the hole transport region151-1,151-2, or151-3may have a single-layered structure including a single layer including a plurality of different materials, or a multi-layered structure having a hole injection layer/hole transport layer structure, a hole injection layer/hole transport layer/emission auxiliary layer structure, a hole injection layer/emission auxiliary layer structure, a hole transport layer/emission auxiliary layer structure, or a hole injection layer/hole transport layer/electron blocking layer structure, wherein for each structure, constituting layers are sequentially stacked from the first electrode110in this stated order, but the structure of the hole transport region151-1,151-2, or151-3is not limited thereto. The hole transport region151-1,151-2, or151-3may include at least one selected from m-MTDATA, TDATA, 2-TNATA, NPB(NPD), β-NPB, TPD, spiro-TPD, spiro-NPB, methylated NPB, TAPC, HMTPD, 4,4′,4″-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline/dodecylbenzenesulfonic acid (PAN I/DBSA), poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT/PSS), polyaniline/camphor sulfonic acid (PANI/CSA), polyaniline/poly(4-styrenesulfonate) (PANI/PSS), a compound represented by Formula 201, and a compound represented by Formula 202: In Formulae 201 and 202, L201to L204may each independently be selected from a substituted or unsubstituted C3-C10cycloalkylene group, a substituted or unsubstituted C1-C10heterocycloalkylene group, a substituted or unsubstituted C3-C10cycloalkenylene group, a substituted or unsubstituted C1-C10heterocycloalkenylene group, a substituted or unsubstituted C6-C60arylene group, a substituted or unsubstituted C1-C60heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group, L205may be selected from *—O—*′, *—S—*′, *—N(Q201)-*′, a substituted or unsubstituted C1-C20alkylene group, a substituted or unsubstituted C2-C20alkenylene group, a substituted or unsubstituted C3-C10cycloalkylene group, a substituted or unsubstituted C1-C10heterocycloalkylene group, a substituted or unsubstituted C3-C10cycloalkenylene group, a substituted or unsubstituted C1-C10heterocycloalkenylene group, a substituted or unsubstituted C6-C60arylene group, a substituted or unsubstituted C1-C60heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group, xa1 to xa4 may each independently be an integer selected from 0 to 3, xa5 may be an integer selected from 1 to 10, and R201to R204and Q201may each independently be selected from a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group. For example, in Formula 202, R201and R202may optionally be linked to each other via a single bond, a dimethyl-methylene group, or a diphenyl-methylene group, and R203and R204may optionally be linked to each other via a single bond, a dimethyl-methylene group, or a diphenyl-methylene group. In one embodiment, in Formulae 201 and 202, L201to L205may each independently be selected from: a phenylene group, a pentalenylene group, an indenylene group, a naphthylene group, an azulenylene group, a heptalenylene group, an indacenylene group, an acenaphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenalenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a naphthacenylene group, a picenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a rubicenylene group, a coronenylene group, an ovalenylene group, a thienylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothienylene group, a dibenzofuranylene group, a dibenzothienylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, and a pyridinylene group; and a phenylene group, a pentalenylene group, an indenylene group, a naphthylene group, an azulenylene group, a heptalenylene group, an indacenylene group, an acenaphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenalenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a naphthacenylene group, a picenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a rubicenylene group, a coronenylene group, an ovalenylene group, a thienylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothienylene group, a dibenzofuranylene group, a dibenzothienylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, and a pyridinylene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a phenyl group substituted with a C1-C10alkyl group, a phenyl group substituted with —F, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a thienyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothienyl group, a dibenzofuranyl group, a dibenzothienyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, —Si(Q31)(Q32)(Q33), and —N(Q31)(Q32), and Q31to Q33may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group. In one or more embodiments, xa1 to xa4 may each independently be 0, 1, or 2. In one or more embodiments, xa5 may be 1, 2, 3, or 4. In one or more embodiments, R201to R204and Q201may each independently be selected from: a phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a thienyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothienyl group, a dibenzofuranyl group, a dibenzothienyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, and a pyridinyl group; and a phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a thienyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothienyl group, a dibenzofuranyl group, a dibenzothienyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, and a pyridinyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a phenyl group substituted with a C1-C10alkyl group, a phenyl group substituted with —F, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a thienyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothienyl group, a dibenzofuranyl group, a dibenzothienyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, —Si(Q31)(Q32)(Q33), and —N(Q31)(Q32), and Q31to Q33are the same as described above. In one or more embodiments, at least one selected from R201to R203in Formula 201 may each independently be selected from: a fluorenyl group, a spiro-bifluorenyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothienyl group; and a fluorenyl group, a spiro-bifluorenyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothienyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a phenyl group substituted with a C1-C10alkyl group, a phenyl group substituted with —F, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothienyl group, but embodiments of the present disclosure are not limited thereto. In one or more embodiments, in Formula 202, i) R201and R202may be linked to each other via a single bond, and/or ii) R203and R204may be linked to each other via a single bond. In one or more embodiments, at least one selected from R201to R204in Formula 202 may be selected from: a carbazolyl group; and a carbazolyl group substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a phenyl group substituted with a C1-C10alkyl group, a phenyl group substituted with —F, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothienyl group, but embodiments of the present disclosure are not limited thereto. The compound represented by Formula 201 may be represented by Formula 201A below: In one embodiment, the compound represented by Formula 201 may be represented by Formula 201A(1) below, but embodiments of the present disclosure are not limited thereto: In one or more embodiments, the compound represented by Formula 201 may be represented by Formula 201A-1 below, but embodiments of the present disclosure are not limited thereto: In one embodiment, the compound represented by Formula 202 may be represented by Formula 202A below: In one embodiment, the compound represented by Formula 202 may be represented by Formula 202A-1 below: In Formulae 201A, 201A(1), 201A-1, 202A, and 202A-1, L201to L203, xa1 to xa3, xa5, and R202to R204are the same as described above, R211and R212may each be understood by referring to the description presented in connection with R203, and R213to R217may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a phenyl group substituted with a C1-C10alkyl group, a phenyl group substituted with —F, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a thienyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothienyl group, a dibenzofuranyl group, a dibenzothienyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, and a pyridinyl group. The hole transport region151-1,151-2, or151-3may include at least one compound selected from Compounds HT1 to HT39, but embodiments of the present disclosure are not limited thereto: A thickness of the hole transport region151-1,151-2, or151-3may be in a range of about 100 Å to about 10,000 Å, for example, about 100 Å to about 1,000 Å. When the hole transport region151-1,151-2, or151-3includes at least one selected from a hole injection layer151-1a,151-2a, or151-3aand a hole transport layer151-1b,151-2b, or151-3b, the thickness of the hole injection layer151-1a,151-2a, or151-3amay be in a range of about 100 Å to about 9,000 Å, and for example, about 100 Å to about 1,000 Å, and the thickness of the hole transport layer151-1b,151-2b, or151-3bmay be in a range of about 50 Å to about 2,000 Å, and for example, about 100 Å to about 1,500 Å. When the thicknesses of the hole transport region151-1,151-2, or151-3, the hole injection layer151-1a,151-2a, or151-3a, and the hole transport layer151-1b,151-2b, or151-3bare within any of these ranges, satisfactory (or suitable) hole transporting characteristics may be obtained without a substantial increase in driving voltage. The emission auxiliary layer may increase light-emission efficiency by compensating for an optical resonance distance according to the wavelength of light emitted by an emission layer, and the electron blocking layer may block or reduce the flow of electrons from an electron transport region. The emission auxiliary layer and the electron blocking layer may each independently include any of the materials as described above. p-Dopant The hole transport region151-1,151-2, or151-3may further include, in addition to the materials described above, a charge-generation material for the improvement of conductive properties. The charge-generation material may be homogeneously or non-homogeneously dispersed in the hole transport region151-1,151-2, or151-3. The charge-generation material may be, for example, a p-dopant. In one embodiment, the p-dopant may have a lowest unoccupied molecular orbital (LUMO) energy level of −3.5 eV or less. The p-dopant may include at least one selected from a quinone derivative, a metal oxide, and a cyano group-containing compound, but embodiments of the present disclosure are not limited thereto. In one embodiment, the p-dopant may include at least one selected from: a quinone derivative, such as tetracyanoquinodimethane (TCNQ) and/or 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ); a metal oxide, such as tungsten oxide and/or molybdenum oxide; 1,4,5,8,9,12-hexaazatriphenylene-hexacarbonitrile (HAT-CN); and a compound represented by Formula 221, but embodiments of the present disclosure are not limited thereto: In Formula 221, R221to R223may each independently be selected from a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, wherein at least one selected from R221to R223may have at least one substituent selected from a cyano group, —F, —Cl, —Br, —I, a C1-C20alkyl group substituted with —F, a C1-C20alkyl group substituted with —Cl, a C1-C20alkyl group substituted with —Br, and a C1-C20alkyl group substituted with —I. Emission Layers152-1,152-2, and152-3in Organic Layer150 In the organic light-emitting devices10and20, the light-emitting units155-1,155-2, and155-3may respectively include the emission layers152-1,152-2, and152-3, and the emission layers152-1,152-2, and152-3may each have a structure in which two or more layers selected from a red emission layer, a green emission layer, a yellow emission layer, and a blue emission layer are stacked in contact or spaced apart. In addition, the emission layers152-1,152-2, and152-3may each have a structure in which two or more materials selected from a material for emitting red light, a material for emitting green light, a material for emitting yellow light, and a material for emitting blue light are mixed without layer division. The light-emitting units155-1,155-2, and155-3may each further include an electron transport (ET)-auxiliary layer above the emission layer152-1,152-2, or152-3and/or a hole transport (HT)-auxiliary layer below the emission layer152-1,152-2, or152-3. The HT-auxiliary layer refers to a layer capable of acting as the hole transport layer, the emission auxiliary layer, and/or the electron blocking layer described above, and the ET-auxiliary layer refers to a layer capable of acting as a buffer layer, a hole blocking layer, an electron control layer, and/or an electron transport layer described below. Materials that may be used for the HT-auxiliary layer and the ET-auxiliary layer may be understood by referring to the description presented in connection with the hole transport region described above, and an electron transport region described below. The emission layers152-1,152-2, and152-3may each include a host and a dopant. The dopant may include at least one selected from a phosphorescent dopant and a fluorescent dopant. An amount of the dopant in the emission layers152-1,152-2, and152-3may each be in a range of about 0.01 parts by weight to about 15 parts by weight based on 100 parts by weight of the host, but embodiments of the present disclosure are not limited thereto. Thicknesses of the emission layers152-1,152-2, and152-3may be in a range of about 100 Å to about 1000 Å, for example, about 200 Å to about 600 Å. When the thicknesses of the emission layers152-1,152-2, and152-3are within the described range, excellent (or suitable) light emission characteristics may be obtained without a substantial increase in driving voltage. Host in Emission Layer152-1,152-2, or152-3 The host may include a compound represented by Formula 301: [Ar301]xb11-[(L301)xb1-R301]xb21. Formula 301 In Formula 301, Ar301may be a substituted or unsubstituted C5-C60carbocyclic group or a substituted or unsubstituted C1-C60heterocyclic group, xb11 may be 1, 2, or 3, L301may be selected from a substituted or unsubstituted C3-C10cycloalkylene group, a substituted or unsubstituted C1-C10heterocycloalkylene group, a substituted or unsubstituted C3-C10cycloalkenylene group, a substituted or unsubstituted C1-C10heterocycloalkenylene group, a substituted or unsubstituted C6-C60arylene group, a substituted or unsubstituted C1-C60heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group, xb1 may be an integer selected from 0 to 5, R301may be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a substituted or unsubstituted C1-C60alkyl group, a substituted or unsubstituted C2-C60alkenyl group, a substituted or unsubstituted C2-C60alkynyl group, a substituted or unsubstituted C1-C60alkoxy group, a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, —Si(Q301)(Q302)(Q303), —N(Q301)(Q302), —B(Q301)(Q302), —C(═O)(Q301), —S(═O)2(Q301), and —P(═O)(Q301)(Q302), xb21 may be an integer selected from 1 to 5, and Q301to Q303may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group, but embodiments of the present disclosure are not limited thereto. In one embodiment, Ar301in Formula 301 may be selected from: a naphthalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, a dibenzofuran group, and a dibenzothiophene group; and a naphthalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, a dibenzofuran group, and a dibenzothiophene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, —Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)2(Q31), and —P(═O)(Q31)(Q32), and Q31to Q33may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group, but embodiments of the present disclosure are not limited thereto. When xb11 in Formula 301 is 2 or more, two or more Ar301(s) may be linked via a single bond. In one or more embodiments, the compound represented by Formula 301 may be represented by Formula 301-1 or Formula 301-2: In Formulae 301-1 and 301-2, A301to A304may each independently be selected from a benzene group, a naphthalene group, a phenanthrene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a pyridine group, a pyrimidine group, an indene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, an indole group, a carbazole group, a benzocarbazole group, a dibenzocarbazole group, a furan group, a benzofuran group, a dibenzofuran group, a naphthofuran group, a benzonaphthofuran group, a dinaphthofuran group, a thiophene group, a benzothiophene group, a dibenzothiophene group, a naphthothiophene group, a benzonaphthothiophene group, and a dinaphthothiophene group, X301may be O, S, or N-[(L304)xb4-R304], R311to R314may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, —Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)2(Q31), and —P(═O)(Q31)(Q32), xb22 and xb23 may each independently be 0, 1, or 2, L301, xb1, R301, and Q31to Q33are the same as described above, L302to L304may each be understood by referring to the description presented in connection with L301, xb2 to xb4 may each be understood by referring to the description presented in connection with xb1, and R302to R304may each be understood by referring to the description presented in connection with R301. For example, L301to L304in Formulae 301, 301-1, and 301-2 may each independently be selected from: a phenylene group, a naphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a thienylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothienylene group, a dibenzofuranylene group, a dibenzothienylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, a pyridinylene group, an imidazolylene group, a pyrazolylene group, a thiazolylene group, an isothiazolylene group, an oxazolylene group, an isoxazolylene group, a thiadiazolylene group, an oxadiazolylene group, a pyrazinylene group, a pyrimidinylene group, a pyridazinylene group, a triazinylene group, a quinolinylene group, an isoquinolinylene group, a benzoquinolinylene group, a phthalazinylene group, a naphthyridinylene group, a quinoxalinylene group, a quinazolinylene group, a cinnolinylene group, a phenanthridinylene group, an acridinylene group, a phenanthrolinylene group, a phenazinylene group, a benzimidazolylene group, an benzoisothiazolylene group, a benzoxazolylene group, an benzoisoxazolylene group, a triazolylene group, a tetrazolylene group, an imidazopyridinylene group, an imidazopyrimidinylene group, and an azacarbazolylene group; and a phenylene group, a naphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a thienylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothienylene group, a dibenzofuranylene group, a dibenzothienylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, a pyridinylene group, an imidazolylene group, a pyrazolylene group, a thiazolylene group, an isothiazolylene group, an oxazolylene group, an isoxazolylene group, a thiadiazolylene group, an oxadiazolylene group, a pyrazinylene group, a pyrimidinylene group, a pyridazinylene group, a triazinylene group, a quinolinylene group, an isoquinolinylene group, a benzoquinolinylene group, a phthalazinylene group, a naphthyridinylene group, a quinoxalinylene group, a quinazolinylene group, a cinnolinylene group, a phenanthridinylene group, an acridinylene group, a phenanthrolinylene group, a phenazinylene group, a benzimidazolylene group, an benzoisothiazolylene group, a benzoxazolylene group, an benzoisoxazolylene group, a triazolylene group, a tetrazolylene group, an imidazopyridinylene group, an imidazopyrimidinylene group, and an azacarbazolylene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thienyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothienyl group, a dibenzofuranyl group, a dibenzothienyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, an benzoisothiazolyl group, a benzoxazolyl group, an benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an azacarbazolyl group, —Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)2(Q31), and —P(═O)(Q31)(Q32), and Q31to Q33are the same as described above. In one embodiment, R301to R304in Formulae 301, 301-1, and 301-2 may each independently be selected from: a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thienyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothienyl group, a dibenzofuranyl group, a dibenzothienyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, an benzoisothiazolyl group, a benzoxazolyl group, an benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, and an azacarbazolyl group; and a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thienyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothienyl group, a dibenzofuranyl group, a dibenzothienyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, an benzoisothiazolyl group, a benzoxazolyl group, an benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, and an azacarbazolyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thienyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothienyl group, a dibenzofuranyl group, a dibenzothienyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, an benzoisothiazolyl group, a benzoxazolyl group, an benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an azacarbazolyl group, —Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)2(Q31), and —P(═O)(Q31)(Q32), and Q31to Q33are the same as described above. In one or more embodiments, the host may include an alkaline earth metal complex. For example, the host may be selected from a Be complex (for example, Compound H55), a Mg complex, and a Zn complex. The host may include at least one selected from 9,10-di(2-naphthyl)anthracene (ADN), 2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN), 9,10-di-(2-naphthyl)-2-t-butyl-anthracene (TBADN), 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP), 1,3-di-9-carbazolylbenzene (mCP), 1,3,5-tri(carbazol-9-yl)benzene (TCP), and Compounds H1 to H55, but embodiments of the present disclosure are not limited thereto: Phosphorescent Dopant Included in Emission Layer152-1,152-2, or152-3in Organic Layer150 The phosphorescent dopant may include an organometallic complex represented by Formula 401 below: M(L401)xc1(L402)xc2. Formula 401 In Formula 401, M may be selected from iridium (Ir), platinum (Pt), palladium (Pd), osmium (Os), titanium (Ti), zirconium (Zr), hafnium (Hf), europium (Eu), terbium (Tb), rhodium (Rh), and thulium (Tm), L401may be selected from ligands represented by Formula 402, and xc1 may be 1, 2, or 3, wherein, when xc1 is two or more, two or more L401(s) may be identical to or different from each other, L402may be an organic ligand, and xc2 may be an integer selected from 0 to 4, wherein, when xc2 is two or more, two or more L402(s) may be identical to or different from each other, In Formula 402, X401to X404may each independently be nitrogen or carbon, X401and X403may be linked via a single bond or a double bond, and X402and X404may be linked via a single bond or a double bond, A401and A402may each independently be selected from a C5-C60carbocyclic group and a C1-C60heterocyclic group, X405may be a single bond, *—O—*′, *—C(═O)—*′, *—N(Q411)-*′, *—C(Q411)(Q412)-*′, *—C(Q411)═C(Q412)-*′, *—C(Q411)=*′, or *═C═*′, wherein Q411and Q412may be hydrogen, deuterium, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, or a naphthyl group, X406may be a single bond, O, or S, R401and R402may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a substituted or unsubstituted C1-C20alkyl group, a substituted or unsubstituted C1-C20alkoxy group, a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, —Si(Q401)(Q402)(Q403), —N(Q401)(Q402), —B(Q401)(Q402), —C(═O)(Q401), —S(═O)2(Q401), and —P(═O)(Q401)(Q402), wherein Q401to Q403may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a C6-C20aryl group, and a C1-C20heteroaryl group, xc11 and xc12 may each independently be an integer selected from 0 to 10, and * and *′ in Formula 402 each indicate a binding site to M in Formula 401. In one embodiment, A401and A402in Formula 402 may each independently be selected from a benzene group, a naphthalene group, a fluorene group, a spiro-bifluorene group, an indene group, a pyrrole group, a thiophene group, a furan group, an imidazole group, a pyrazole group, a thiazole group, an isothiazole group, an oxazole group, an isoxazole group, a pyridine group, a pyrazine group, a pyrimidine group, a pyridazine group, a quinoline group, an isoquinoline group, a benzoquinoline group, a quinoxaline group, a quinazoline group, a carbazole group, a benzimidazole group, a benzofuran group, a benzothiophene group, an benzoisothiophene group, a benzoxazole group, an benzoisoxazole group, a triazole group, a tetrazole group, an oxadiazole group, a triazine group, a dibenzofuran group, and a dibenzothiophene group. In one or more embodiments, in Formula 402, i) X401may be nitrogen, and X402may be carbon, or ii) X401and X402may each be nitrogen at the same time. In one or more embodiments, R401and R402in Formula 402 may each independently be selected from:hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, and a C1-C20alkoxy group;a C1-C20alkyl group and a C1-C20alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a phenyl group, a naphthyl group, a cyclopentyl group, a cyclohexyl group, an adamantanyl group, a norbornanyl group, and a norbornenyl group;a cyclopentyl group, a cyclohexyl group, an adamantanyl group, a norbornanyl group, a norbornenyl group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothienyl group;a cyclopentyl group, a cyclohexyl group, an adamantanyl group, a norbornanyl group, a norbornenyl group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothienyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, an adamantanyl group, a norbornanyl group, a norbornenyl group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothienyl group; and—Si(Q401)(Q402)(Q403), —N(Q401)(Q402), —B(Q401)(Q402), —C(═O)(Q401), —S(═O)2(Q401), and —P(═O)(Q401)(Q402), andQ401to Q403may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, and a naphthyl group, but embodiments of the present disclosure are not limited thereto. In one or more embodiments, when xc1 in Formula 401 is 2 or more, two A401(s) in two or more L401(s) may optionally be linked via X407, which is a linking group, and/or two A402(s) in two or more L401(s) may optionally be linked via X408, which is a linking group (see e.g., Compounds PD1 to PD4 and PD7). X407and X408may each independently be a single bond, *—C(═O)—*′, *—N(Q413)-*′, *—C(Q413)(Q414)-*′, or *—C(Q413)═C(Q414)-*′ (wherein Q413and Q414may each independently be hydrogen, deuterium, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, or a naphthyl group), but are not limited thereto. L402in Formula 401 may be a monovalent, divalent, or trivalent organic ligand. For example, L402may be selected from halogen, diketone (for example, acetylacetonate), carboxylic acid (for example, picolinate), —C(═O), isonitrile, —CN, and phosphorus-containing ligand (for example, phosphine and/or phosphite), but embodiments of the present disclosure are not limited thereto. In one or more embodiments, the phosphorescent dopant may be selected from, for example, Compounds PD1 to PD25, but embodiments of the present disclosure are not limited thereto: Fluorescent Dopant in Emission Layer152-1,152-2, or152-3 The fluorescent dopant may include an arylamine compound and/or a styrylamine compound. The fluorescent dopant may include a compound represented by Formula 501 below: In Formula 501, Ar501may be a substituted or unsubstituted C5-C60carbocyclic group or a substituted or unsubstituted C1-C60heterocyclic group, L501to L503may each independently be selected from a substituted or unsubstituted C3-C10cycloalkylene group, a substituted or unsubstituted C1-C10heterocycloalkylene group, a substituted or unsubstituted C3-C10cycloalkenylene group, a substituted or unsubstituted C1-C10heterocycloalkenylene group, a substituted or unsubstituted C6-C60arylene group, a substituted or unsubstituted C1-C60heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group, xd1 to xd3 may each independently be an integer selected from 0 to 3, R501and R502may each independently be selected from a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, and xd4 may be an integer selected from 1 to 6. In one embodiment, Ar501in Formula 501 may be selected from: a naphthalene group, a heptalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, and an indenophenanthrene group; and a naphthalene group, a heptalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, and an indenophenanthrene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group. L501to L503may each independently be selected from a phenylene group, a naphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a thienylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothienylene group, a dibenzofuranylene group, a dibenzothienylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, and a pyridinylene group; and a phenylene group, a naphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a thienylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothienylene group, a dibenzofuranylene group, a dibenzothienylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, and a pyridinylene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thienyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothienyl group, a dibenzofuranyl group, a dibenzothienyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, and a pyridinyl group. In one or more embodiments, R501and R502in Formula 501 may each independently be selected from: a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thienyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothienyl group, a dibenzofuranyl group, a dibenzothienyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, and a pyridinyl group; and a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thienyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothienyl group, a dibenzofuranyl group, a dibenzothienyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, and a pyridinyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thienyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothienyl group, a dibenzofuranyl group, a dibenzothienyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, and —Si(Q31)(Q32)(Q33), and Q31to Q33may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group. In one or more embodiments, xd4 in Formula 501 may be 2, but embodiments of the present disclosure are not limited thereto. For example, the fluorescent dopant may be selected from Compounds FD1 to FD77: In one or more embodiments, the fluorescent dopant may be selected from the following compounds, but embodiments of the present disclosure are not limited thereto: Electron Transport Region153-1,153-2, or153-3in Organic Layer150 The electron transport region153-1,153-2, or153-3may have i) a single-layered structure including a single layer including a single material, ii) a single-layered structure including a single layer including a plurality of different materials, or iii) a multi-layered structure having a plurality of layers including a plurality of different materials. The electron transport region153-1,153-2, or153-3may include at least one layer selected from a buffer layer153-1a,153-2a, or153-3a, a hole blocking layer, an electron control layer, an electron transport layer153-1b,153-2b, or153-3b, and an electron injection layer153-3c, but embodiments of the present disclosure are not limited thereto. For example, the electron transport region153-1,153-2, or153-3may have an electron transport layer/electron injection layer structure, a hole blocking layer/electron transport layer/electron injection layer structure, an electron control layer/electron transport layer/electron injection layer structure, or a buffer layer/electron transport layer/electron injection layer structure, wherein for each structure, constituting layers are sequentially stacked from the emission layer152-1,152-2, or152-3. However, embodiments of the structure of the electron transport region153-1,153-2, or153-3are not limited thereto. The electron transport region153-1,153-2, or153-3(for example, a buffer layer153-1a,153-2a, or153-3a, a hole blocking layer, an electron control layer, and/or an electron transport layer153-1b,153-2b, or153-3bin the electron transport region153-1,153-2, or153-3) may include a metal-free compound containing at least one π electron-depleted nitrogen-containing ring. The “π electron-depleted nitrogen-containing ring” indicates a C1-C60heterocyclic group having at least one *—N═*′ moiety as a ring-forming moiety. For example, the “π electron-depleted nitrogen-containing ring” may be i) a 5-membered to 7-membered heteromonocyclic group having at least one *—N═*′ moiety, ii) a heteropolycyclic group in which two or more 5-membered to 7-membered heteromonocyclic groups, each having at least one *—N═*′ moiety, are condensed with each other, or iii) a heteropolycyclic group in which at least one of 5-membered to 7-membered heteromonocyclic groups, each having at least one *—N═*′ moiety, is condensed with at least one C5-C60carbocyclic group. Examples of the π electron-depleted nitrogen-containing ring include an imidazole, a pyrazole, a thiazole, an isothiazole, an oxazole, an isoxazole, a pyridine, a pyrazine, a pyrimidine, a pyridazine, an indazole, a purine, a quinoline, an isoquinoline, a benzoquinoline, a phthalazine, a naphthyridine, a quinoxaline, a quinazoline, a cinnoline, a phenanthridine, an acridine, a phenanthroline, a phenazine, a benzimidazole, an benzoisothiazole, a benzoxazole, an benzoisoxazole, a triazole, a tetrazole, an oxadiazole, a triazine, a thiadiazole, an imidazopyridine, an imidazopyrimidine, and an azacarbazole, but are not limited thereto. For example, the electron transport region153-1,153-2, or153-3may include a compound represented by Formula 601: [Ar601]xe11-[(L601)xe1-R601]xe21Formula 601 In Formula 601, Ar601may be a substituted or unsubstituted C5-C60carbocyclic group or a substituted or unsubstituted C1-C60heterocyclic group, xe11 may be 1, 2, or 3, L601may be selected from a substituted or unsubstituted C3-C10cycloalkylene group, a substituted or unsubstituted C1-C10heterocycloalkylene group, a substituted or unsubstituted C3-C10cycloalkenylene group, a substituted or unsubstituted C1-C10heterocycloalkenylene group, a substituted or unsubstituted C6-C60arylene group, a substituted or unsubstituted C1-C60heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group, xe1 may be an integer selected from 0 to 5, R601may be selected from a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, —Si(Q601)(Q602)(Q603), —C(═O)(Q601), —S(═O)2(Q601), and —P(═O)(Q601)(Q602), Q601to Q603may each independently be a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, or a naphthyl group, and xe21 may be an integer selected from 1 to 5. In one embodiment, at least one of Ar601(s) in the number of xe11 and R601(s) in the number of xe21 may include the π electron-depleted nitrogen-containing ring. In one embodiment, Ar601in Formula 601 may be selected from: a benzene group, a naphthalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, a dibenzofuran group, a dibenzothiophene group, a carbazole group, an imidazole group, a pyrazole group, a thiazole group, an isothiazole group, an oxazole group, an isoxazole group, a pyridine group, a pyrazine group, a pyrimidine group, a pyridazine group, an indazole group, a purine group, a quinoline group, an isoquinoline group, a benzoquinoline group, a phthalazine group, a naphthyridine group, a quinoxaline group, a quinazoline group, a cinnoline group, a phenanthridine group, an acridine group, a phenanthroline group, a phenazine group, a benzimidazole group, an benzoisothiazole group, a benzoxazole group, an benzoisoxazole group, a triazole group, a tetrazole group, an oxadiazole group, a triazine group, a thiadiazole group, an imidazopyridine group, an imidazopyrimidine group, and an azacarbazole group; and a benzene group, a naphthalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, a dibenzofuran group, a dibenzothiophene group, a carbazole group, an imidazole group, a pyrazole group, a thiazole group, an isothiazole group, an oxazole group, an isoxazole group, a pyridine group, a pyrazine group, a pyrimidine group, a pyridazine group, an indazole group, a purine group, a quinoline group, an isoquinoline group, a benzoquinoline group, a phthalazine group, a naphthyridine group, a quinoxaline group, a quinazoline group, a cinnoline group, a phenanthridine group, an acridine group, a phenanthroline group, a phenazine group, a benzimidazole group, an benzoisothiazole group, a benzoxazole group, an benzoisoxazole group, a triazole group, a tetrazole group, an oxadiazole group, a triazine group, a thiadiazole group, an imidazopyridine group, an imidazopyrimidine group, and an azacarbazole group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, —Si(Q31)(Q32)(Q33), —S(═O)2(Q31), and —P(═O)(Q31)(Q32), and Q31to Q33may each independently be selected from a C1-C10alkyl group, a alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group. When xe11 in Formula 601 is 2 or more, two or more Ar601(s) may be linked via a single bond. In one or more embodiments, Ar601in Formula 601 may be an anthracene group. In one or more embodiments, a compound represented by Formula 601 may be represented by Formula 601-1 below: In Formula 601-1, X614may be N or C(R614), X615may be N or C(R615), X616may be N or C(R616), and at least one selected from X614to X616may be N, L611to L613may each independently be the same as described in connection with L601, xe611 to xe613 may each independently be understood by referring to the description presented in connection with xe1, R611to R613may each independently be understood by referring to the description presented in connection with R601, and R614to R616may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group. In one embodiment, L601and L611to L613in Formulae 601 and 601-1 may each independently be selected from: a phenylene group, a naphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a thienylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothienylene group, a dibenzofuranylene group, a dibenzothienylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, a pyridinylene group, an imidazolylene group, a pyrazolylene group, a thiazolylene group, an isothiazolylene group, an oxazolylene group, an isoxazolylene group, a thiadiazolylene group, an oxadiazolylene group, a pyrazinylene group, a pyrimidinylene group, a pyridazinylene group, a triazinylene group, a quinolinylene group, an isoquinolinylene group, a benzoquinolinylene group, a phthalazinylene group, a naphthyridinylene group, a quinoxalinylene group, a quinazolinylene group, a cinnolinylene group, a phenanthridinylene group, an acridinylene group, a phenanthrolinylene group, a phenazinylene group, a benzimidazolylene group, an benzoisothiazolylene group, a benzoxazolylene group, an benzoisoxazolylene group, a triazolylene group, a tetrazolylene group, an imidazopyridinylene group, an imidazopyrimidinylene group, and an azacarbazolylene group; and a phenylene group, a naphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a thienylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothienylene group, a dibenzofuranylene group, a dibenzothienylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, a pyridinylene group, an imidazolylene group, a pyrazolylene group, a thiazolylene group, an isothiazolylene group, an oxazolylene group, an isoxazolylene group, a thiadiazolylene group, an oxadiazolylene group, a pyrazinylene group, a pyrimidinylene group, a pyridazinylene group, a triazinylene group, a quinolinylene group, an isoquinolinylene group, a benzoquinolinylene group, a phthalazinylene group, a naphthyridinylene group, a quinoxalinylene group, a quinazolinylene group, a cinnolinylene group, a phenanthridinylene group, an acridinylene group, a phenanthrolinylene group, a phenazinylene group, a benzimidazolylene group, an benzoisothiazolylene group, a benzoxazolylene group, an benzoisoxazolylene group, a triazolylene group, a tetrazolylene group, an imidazopyridinylene group, an imidazopyrimidinylene group, and an azacarbazolylene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thienyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothienyl group, a dibenzofuranyl group, a dibenzothienyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, an benzoisothiazolyl group, a benzoxazolyl group, an benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, and an azacarbazolyl group, but embodiments of the present disclosure are not limited thereto. In one or more embodiments, xe1 and xe611 to xe613 in Formulae 601 and 601-1 may each independently be 0, 1, or 2. In one or more embodiments, R601and R611to R613in Formulae 601 and 601-1 may each independently be selected from: a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thienyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothienyl group, a dibenzofuranyl group, a dibenzothienyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, an benzoisothiazolyl group, a benzoxazolyl group, an benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, and an azacarbazolyl group; a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thienyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothienyl group, a dibenzofuranyl group, a dibenzothienyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, an benzoisothiazolyl group, a benzoxazolyl group, an benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, and an azacarbazolyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thienyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothienyl group, a dibenzofuranyl group, a dibenzothienyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, an benzoisothiazolyl group, a benzoxazolyl group, an benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, and an azacarbazolyl group; and —S(═O)2(Q601), and —P(═O)(Q601)(Q602), and Q601and Q602are the same as described above. The electron transport region153-1,153-2, or153-3may include at least one compound selected from Compounds ET1 to ET36, but embodiments of the present disclosure are not limited thereto: In one or more embodiments, the electron transport region153-1,153-2, or153-3may include at least one compound selected from 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ), and NTAZ: Thicknesses of the buffer layer153-1a,153-2a, or153-3a, the hole blocking layer, and the electron control layer may each independently be in a range of about 20 Å to about 1,000 Å, for example, about 30 Å to about 300 Å. When the thicknesses of the buffer layer153-1a,153-2a, or153-3a, the hole blocking layer, and the electron control layer are within any of these ranges, the electron transport region153-1,153-2, or153-3may have excellent (or suitable) hole blocking characteristics and/or electron control characteristics without a substantial increase in driving voltage. A thickness of the electron transport layer153-1b,153-2b, or153-3bmay be in a range of about 100 Å to about 1,000 Å, for example, about 150 Å to about 500 Å. When the thickness of the electron transport layer153-1b,153-2b, or153-3bis within the range described above, the electron transport layer153-1b,153-2b, or153-3bmay have satisfactory (or suitable) electron transport characteristics without a substantial increase in driving voltage. The electron transport region153-1,153-2, or153-3(for example, the electron transport layer153-1b,153-2b, or153-3bin the electron transport region153-1,153-2, or153-3) may further include, in addition to the materials described above, a metal-containing material. The metal-containing material may include at least one selected from alkali metal complex and alkaline earth-metal complex. The alkali metal complex may include a metal ion selected from a Li ion, a Na ion, a K ion, a Rb ion, and a Cs ion, and the alkaline earth-metal complex may include a metal ion selected from a Be ion, a Mg ion, a Ca ion, a Sr ion, and a Ba ion. A ligand coordinated with the metal ion of the alkali metal complex or the alkaline earth-metal complex may be selected from a hydroxy quinoline, a hydroxy isoquinoline, a hydroxy benzoquinoline, a hydroxy acridine, a hydroxy phenanthridine, a hydroxy phenyloxazole, a hydroxy phenylthiazole, a hydroxy phenyloxadiazole, a hydroxy phenylthiadiazole, a hydroxy phenylpyridine, a hydroxy phenylbenzimidazole, a hydroxy phenylbenzothiazole, a bipyridine, a phenanthroline, and a cyclopentadiene, but embodiments of the present disclosure are not limited thereto. For example, the metal-containing material may include a Li complex. The Li complex may include, for example, Compound ET-D1 (8-hydroxyquinolinolato-lithium, LiQ) and/or Compound ET-D2: The electron transport region153-1,153-2, or153-3may include an electron injection layer153-3cthat facilitates electron injection from the second electrode190. The electron injection layer153-3cmay be in direct contact with the second electrode190. The electron injection layer153-3cmay have i) a single-layered structure including a single layer including a single material, ii) a single-layered structure including a single layer including a plurality of different materials, or iii) a multi-layered structure having a plurality of layers including a plurality of different materials. The electron injection layer153-3cmay include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth-metal compound, a rare earth metal compound, an alkali metal complex, an alkaline earth-metal complex, a rare earth metal complex, or any combination thereof. The alkali metal may be selected from Li, Na, K, Rb, and Cs. In one embodiment, the alkali metal may be Li, Na, or Cs. In one or more embodiments, the alkali metal may be Li or Cs, but embodiments of the present disclosure are not limited thereto. The alkaline earth metal may be selected from Mg, Ca, Sr, and Ba. The rare earth metal may be selected from Sc, Y, Ce, Yb, Gd, and Tb. The alkali metal compound, the alkaline earth-metal compound, and the rare earth metal compound may be selected from oxides and halides (for example, fluorides, chlorides, bromides, and/or iodides) of the alkali metal, the alkaline earth-metal, and the rare earth metal, respectively. The alkali metal compound may be selected from alkali metal oxides (such as Li2O, Cs2O, and/or K2O), and alkali metal halides (such as LiF, NaF, CsF, KF, LiI, NaI, CsI, KI, and/or RbI). In one embodiment, the alkali metal compound may be selected from LiF, Li2O, NaF, LiI, NaI, CsI, and KI, but embodiments of the present disclosure are not limited thereto. The alkaline earth-metal compound may be selected from alkaline earth-metal oxides, such as BaO, SrO, CaO, BaxSr1-xO (0<x<1), and/or BaxCa1-xO (0<x<1). In one embodiment, the alkaline earth-metal compound may be selected from BaO, SrO, and CaO, but embodiments of the present disclosure are not limited thereto. The rare earth metal compound may be selected from YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, and TbF3. In one embodiment, the rare earth metal compound may be selected from YbF3, ScF3, TbF3, YbI3, ScI3, and TbI3, but embodiments of the present disclosure are not limited thereto. The alkali metal complex, the alkaline earth-metal complex, and the rare earth metal complex may respectively include an ion of alkali metal, alkaline earth-metal, and rare earth metal as described above, and a ligand coordinated with a metal ion of the alkali metal complex, the alkaline earth-metal complex, or the rare earth metal complex may be selected from hydroxy quinoline, hydroxy isoquinoline, hydroxy benzoquinoline, hydroxy acridine, hydroxy phenanthridine, hydroxy phenyloxazole, hydroxy phenylthiazole, hydroxy phenyloxadiazole, hydroxy phenylthiadiazole, hydroxy phenylpyridine, hydroxy phenylbenzimidazole, hydroxy phenylbenzothiazole, bipyridine, phenanthroline, and cyclopentadiene, but embodiments of the present disclosure are not limited thereto. The electron injection layer153-3cmay include (e.g., may consist of) an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth-metal compound, a rare earth metal compound, an alkali metal complex, an alkaline earth-metal complex, a rare earth metal complex, or any combination thereof, as described above. In one or more embodiments, the electron injection layer153-3cmay further include an organic material. When the electron injection layer153-3cfurther includes an organic material, the alkali metal, the alkaline earth metal, the rare earth metal, the alkali metal compound, the alkaline earth-metal compound, the rare earth metal compound, the alkali metal complex, the alkaline earth-metal complex, the rare earth metal complex, or any combination thereof may be homogeneously or non-homogeneously dispersed in a matrix including the organic material. A thickness of the electron injection layer153-3cmay be in a range of about 1 Å to about 100 Å, for example, about 3 Å to about 90 Å. When the thickness of the electron injection layer153-3cis within the range described above, the electron injection layer153-3cmay have satisfactory (or suitable) electron injection characteristics without a substantial increase in driving voltage. Charge Generation Layer154-1,154-2,154-1a,154-1b,154-2a, or154-2bin Organic Layer150 The charge generation layer154-1,154-2,154-1a,154-1b,154-2a, or154-2bmay be understood by referring to the description presented in connection with the hole transport region151-1,151-2, or151-3and the electron transport region153-1,153-2, or153-3. For example, the charge generation layer154-1,154-2,154-1a,154-1b,154-2a, or154-2bmay include a compound included in the hole transport region151-1,151-2, or151-3or the electron transport region153-1,153-2, or153-3. Second Electrode190 The second electrode190may be positioned on the organic layer150having the structure according to embodiments of the present disclosure. The second electrode190may be a cathode, which is an electron injection electrode, and in this regard, a material for forming the second electrode190may be selected from a metal, an alloy, an electrically conductive compound, and combinations thereof, which have a relatively low work function. The second electrode190may include at least one selected from lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), magnesium-silver (Mg—Ag), ITO, and IZO, but embodiments of the present disclosure are not limited thereto. The second electrode190may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode. The second electrode190may have a single-layered structure, or a multi-layered structure including two or more layers. In one embodiment, the organic light-emitting device10or20may further include at least one selected from a first capping layer under the first electrode110and a second capping layer above the second electrode190. In the organic layer150of each of the organic light-emitting devices10and20, light generated in the emission layer152-1,152-2, or152-3may pass through the first electrode110and the first capping layer toward the outside, wherein the first electrode110may be a semi-transmissive electrode or a transmissive electrode. In one or more embodiments, light generated in the emission layer152-1,152-2, or152-3in the organic layer150may pass through the second electrode190and the second capping layer toward the outside, wherein the second electrode190may be a semi-transmissive electrode or a transmissive electrode. The first capping layer and the second capping layer may increase external luminescence efficiency according to the principle of constructive interference. The first capping layer and the second capping layer may each independently be an organic capping layer including an organic material, an inorganic capping layer including an inorganic material, or a composite capping layer including an organic material and an inorganic material. At least one selected from the first capping layer and the second capping layer may each independently include at least one material selected from a carbocyclic compound, a heterocyclic compound, an amine-based compound, a porphine derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, and an alkaline earth metal complex. The carbocyclic compound, the heterocyclic compound, and/or the amine-based compound may be optionally substituted with a substituent containing at least one element selected from O, N, S, Se, Si, F, Cl, Br, and I. In one embodiment, at least one selected from the first capping layer and the second capping layer may each independently include an amine-based compound. In one embodiment, at least one selected from the first capping layer and the second capping layer may each independently include the compound represented by Formula 201 or the compound represented by Formula 202. In one or more embodiments, at least one selected from the first capping layer and the second capping layer may each independently include a compound selected from Compounds HT28 to HT33 and Compounds CP1 to CP5, but embodiments of the present disclosure are not limited thereto: Hereinbefore, the organic light-emitting device according to an embodiment has been described in connection withFIGS.1and2, but embodiments of the present disclosure are not limited thereto. [Electronic Apparatus] The light-emitting device may be included in various electronic apparatuses. In an embodiment, the electronic apparatus including the light-emitting device may be a light-emitting apparatus, an authentication apparatus, or the like. The electronic apparatus (for example, light-emitting apparatus) may further include, in addition to the light-emitting device, i) a color filter, ii) a color conversion layer, or iii) a color filter and a color conversion layer. The color filter and/or the color conversion layer may be located in at least one traveling direction of light emitted from the light-emitting device. In an embodiment, light emitted from the light-emitting device may be blue light or white light. The light-emitting device may be the same as described above. In an embodiment, the color conversion layer may include quantum dots. The quantum dot may be, for example, a quantum dot as described herein. The electronic apparatus may include a first substrate. The first substrate includes a plurality of subpixel areas, the color filter includes a plurality of color filter areas corresponding to the plurality of subpixel areas, respectively, and the color conversion layer may include a plurality of color conversion areas corresponding to the subpixel areas, respectively. A pixel-defining film may be located between the plurality of subpixel areas to define each of the subpixel areas. The color filter may further include the color filter areas and a light-blocking pattern located between adjacent color filter areas of the color filter areas, and the color conversion layer may further include the color conversion areas and a light-blocking pattern located between adjacent color conversion areas of the color conversion areas. The color filter areas (or the color conversion areas) may include a first area emitting first color light, a second area emitting second color light, and/or a third area emitting third color light, and the first color light, the second color light, and/or the third color light may have different maximum emission wavelengths from one another. In an embodiment, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. In an embodiment, the color filter areas (or the color conversion areas) may include quantum dots. In detail, the first area may include a red quantum dot, the second area may include a green quantum dot, and the third area may not include a quantum dot. The quantum dot is the same as described in the present specification. Each of the first area, the second area and/or the third area may further include a scattering body. In an embodiment, the light-emitting device may emit first light, the first area may absorb the first light to emit first first-color light, the second area may absorb the first light to emit second first-color light, and the third area may absorb the first light to emit third first-color light. In this regard, the first first-color light, the second first-color light, and the third first-color light may have different maximum emission wavelengths from one another. In detail, the first light may be blue light, the first first-color light may be red light, the second first-color light may be green light, and the third first-color light may be blue light. The electronic apparatus may further include a thin-film transistor in addition to the light-emitting device1as described above. The thin-film transistor may include a source electrode, a drain electrode, and an activation layer, wherein any one of the source electrode and the drain electrode may be eclectically connected to any one of the first electrode and the second electrode of the light-emitting device. The thin-film transistor may further include a gate electrode, a gate insulation layer, or the like. The active layer may include crystalline silicon, amorphous silicon, organic semiconductor, oxide semiconductor, or the like. The electronic apparatus may further include a sealing portion for sealing the light-emitting device. The sealing portion may be located between the color filter and/or the color conversion layer and the light-emitting device. The sealing portion allows light from the light-emitting device10to be extracted to the outside, while simultaneously preventing external air and moisture from penetrating into the light-emitting device10. The sealing portion may be a sealing substrate including a transparent glass substrate or a plastic substrate. The sealing portion may be a thin film encapsulation layer including at least one layer of a organic layer and/or a inorganic layer. When the sealing portion is a thin film encapsulation layer, the electronic apparatus may be flexible. On the sealing portion, in addition to the color filter and/or color conversion layer, various functional layers may be further located according to the use of the electronic apparatus. The functional layers may include a touch screen layer, a polarizing layer, and the like. The touch screen layer may be a pressure-sensitive touch screen layer, a capacitive touch screen layer, or an infrared touch screen layer. The authentication apparatus may be, for example, a biometric authentication apparatus for authenticating an individual by using biometric information of a biometric body (for example, a finger tip, a pupil, or the like). The authentication apparatus may further include, in addition to the light-emitting device, a biometric information collector. The electronic apparatus may be applied to various displays, light sources, lighting, personal computers (for example, a mobile personal computer), mobile phones, digital cameras, electronic organizers, electronic dictionaries, electronic game machines, medical instruments (for example, electronic thermometers, sphygmomanometers, blood glucose meters, pulse measurement devices, pulse wave measurement devices, electrocardiogram displays, ultrasonic diagnostic devices, or endoscope displays), fish finders, various measuring instruments, meters (for example, meters for a vehicle, an aircraft, and a vessel), projectors, and the like. [Description ofFIG.8] FIG.8is a cross-sectional view showing a light-emitting apparatus according to an embodiment of the present disclosure; and The light-emitting apparatus ofFIG.8includes a substrate100, a thin-film transistor (TFT), a light-emitting device, and an encapsulation portion300that seals light-emitting device. The substrate100may be a flexible substrate, a glass substrate, or a metal substrate. A buffer layer210may be located on the substrate100. The buffer layer210prevents the penetration of impurities through the substrate100and may provide a flat surface on the substrate100. A TFT may be located on the buffer layer210. The TFT may include an activation layer220, a gate electrode240, a source electrode260, and a drain electrode270. The activation layer220may include an inorganic semiconductor such as silicon or polysilicon, an organic semiconductor, or an oxide semiconductor, and may include a source region, a drain region and a channel region. A gate insulating film230for insulating the activation layer220from the gate electrode240may be located on the activation layer220, and the gate electrode240may be located on the gate insulating film230. An organic layer insulating film250may be located on the gate electrode240. The organic layer insulating film250is located between the gate electrode240and the source electrode260to insulate the gate electrode240from the source electrode260and between the gate electrode240and the drain electrode270to insulate the gate electrode240from the drain electrode270. The source electrode260and the drain electrode270may be located on the organic layer insulating film250. The organic layer insulating film250and the gate insulating film230may be formed to expose the source region and the drain region of the activation layer220, and the source electrode260and the drain electrode270may be located to be in contact with the exposed portions of the source region and the drain region of the activation layer220. The TFT may be electrically connected to a light-emitting device to drive the light-emitting device, and is covered by a passivation layer280. The passivation layer280may include an inorganic insulating film, an organic insulating film, or a combination thereof. A light-emitting device is provided on the passivation layer280. The light-emitting device includes the first electrode110, the organic layer150, and the second electrode190. The first electrode110may be located on the passivation layer280. The passivation layer280does not completely cover the drain electrode270and exposes a portion of the drain electrode270, and the first electrode110may be connected to the exposed portion of the drain electrode270. A pixel defining layer290including an insulating material may be located on the first electrode110. The pixel defining layer290may expose a certain region of the first electrode110, and the organic layer150may be formed in the exposed region of the first electrode110. The pixel defining layer290may be a polyimide or polyacryl-based organic film. Although not shown inFIG.2, at least one some layers of the organic layer150may extend to the upper portion of the pixel defining layer290and may be located in the form of a common layer. A second electrode190may be located on the organic layer150, and a capping layer170may be additionally formed on the second electrode190. The capping layer170may be formed to cover the second electrode190. An encapsulation portion300may be located on the capping layer170. The encapsulation portion300may be located on a light-emitting device and protects the light-emitting device from moisture or oxygen. The encapsulation portion300may include: an inorganic film including silicon nitride (SiNx), silicon oxide (SiOx), indium tin oxide, indium zinc oxide, or a combination thereof; an organic film including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, an acrylic resin (for example, polymethyl methacrylate or polyacrylic acid), an epoxy-based resin (for example, aliphatic glycidyl ether (AGE), or a combination thereof; or a combination of an inorganic film and an organic film. Layers constituting the hole transport region, the emission layer, and layers constituting the electron transport region may be formed in a certain region by using one or more suitable methods selected from vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, ink-jet printing, laser-printing, and laser-induced thermal imaging. When layers constituting the hole transport region, the emission layer, and layers constituting the electron transport region are formed by vacuum deposition, the deposition may be performed at a deposition temperature of about 100° C. to about 500° C., a vacuum degree of about 10−8torr to about 10−3torr, and a deposition speed of about 0.01 Å/sec to about 100 Å/sec by taking into account a material to be included in a layer to be formed, and the structure of a layer to be formed. When layers constituting the hole transport region, the emission layer, and layers constituting the electron transport region are formed by spin coating, the spin coating may be performed at a coating speed of about 2,000 rpm to about 5,000 rpm and at a heat treatment temperature of about 80° C. to 200° C. by taking into account a material to be included in a layer to be formed, and the structure of a layer to be formed. General Definition of Substituents The term “C1-C60alkyl group” as used herein refers to a linear or branched aliphatic saturated hydrocarbon monovalent group having 1 to 60 carbon atoms, preferably is a C1-C20alkyl group, and non-limiting examples thereof include a methyl group, an ethyl group, a propyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, a pentyl group, an isoamyl group, and a hexyl group. The term “C1-C60alkylene group” as used herein may refer to a divalent group having the same structure as the C1-C60alkyl group. The term “C2-C60alkenyl group” as used herein may refer to a hydrocarbon group having at least one carbon-carbon double bond in, for example, the middle and/or at the terminus of the C2-C60alkyl group, and non-limiting examples thereof include an ethenyl group, a propenyl group, and a butenyl group. The term “C2-C60alkenylene group” as used herein may refer to a divalent group having the same structure as the C2-C60alkenyl group. The term “C2-C60alkynyl group” as used herein may refer to a hydrocarbon group having at least one carbon-carbon triple bond in, for example, the middle and/or at the terminus of the C2-C60alkyl group, and non-limiting examples thereof include an ethynyl group, and a propynyl group. The term “C2-C60alkynylene group” as used herein may refer to a divalent group having the same structure as the C2-C60alkynyl group. The term “C1-C60alkoxy group” as used herein may refer to a monovalent group represented by —OA101(wherein A101is the C1-C60alkyl group), preferably is a C1-C20alkoxy group, and non-limiting examples thereof include a methoxy group, an ethoxy group, and an isopropyloxy group. The term “C3-C10cycloalkyl group” as used herein may refer to a monovalent saturated hydrocarbon monocyclic group having 3 to 10 carbon atoms, and non-limiting examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, and a cycloheptyl group. The term “C3-C10cycloalkylene group” as used herein may refer to a divalent group having the same structure as the C3-C10cycloalkyl group. The term “C1-C10heterocycloalkyl group” as used herein may refer to a monovalent monocyclic group having at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom and 1 to 10 carbon atoms as the remaining ring-forming atoms, and non-limiting examples thereof include a 1,2,3,4-oxatriazolidinyl group, a tetrahydrofuranyl group, and a tetrahydrothienyl group. The term “C1-C10heterocycloalkylene group” as used herein may refer to a divalent group having the same structure as the C1-C10heterocycloalkyl group. The term “C3-C10cycloalkenyl group” used herein may refer to a monovalent monocyclic group that has 3 to 10 carbon atoms and at least one carbon-carbon double bond in the ring thereof and no aromaticity, and non-limiting examples thereof include a cyclopentenyl group, a cyclohexenyl group, and a cycloheptenyl group. The term “C3-C10cycloalkenylene group” as used herein may refer to a divalent group having the same structure as the C3-C10cycloalkenyl group. The term “C1-C10heterocycloalkenyl group” as used herein may refer to a monovalent monocyclic group that has at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom, 1 to 10 carbon atoms as the remaining ring-forming atoms, and at least one double bond in its ring. Non-limiting examples of the C1-C10heterocycloalkenyl group include a 4,5-dihydro-1,2,3,4-oxatriazolylgroup, a 2,3-dihydrofuranyl group, and a 2,3-dihydrothienyl group. The term “C1-C10heterocycloalkenylene group” as used herein may refer to a divalent group having the same structure as the C1-C10heterocycloalkenyl group. The term “C6-C60aryl group” as used herein may refer to a monovalent group having a carbocyclic aromatic system having 6 to 60 carbon atoms. Non-limiting examples of the C6-C60aryl group include a phenyl group, a naphthyl group, an anthracenyl group, a phenanthrenyl group, a pyrenyl group, and a chrysenyl group. The term “C6-C60arylene group” used herein may refer to a divalent group having the same structure as the C6-C60aryl group. When the C6-C60aryl group and the C6-C60arylene group each independently include two or more rings, the respective rings may be fused to each other. The term “C1-C60heteroaryl group” as used herein may refer to a monovalent group having a heterocyclic aromatic system that has at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom, in addition to 1 to 60 carbon atoms. Non-limiting examples of the C1-C60heteroaryl group include a pyridinyl group, a pyrimidinyl group, a pyrazinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, and an isoquinolinyl group. The term “C1-C60heteroarylene group” as used herein may refer to a divalent group having the same structure as the C1-C60heteroaryl group. When the C1-C60heteroaryl group and the C1-C60heteroarylene group each independently include two or more rings, the respective rings may be condensed (fused) with each other. The term “C6-C60aryloxy group” as used herein may refer to a group represented by —OA102(wherein A102is the C6-C60aryl group), and the term “C6-C60arylthio group” used herein may refer to a group represented by —SA103(wherein A103is the C6-C60aryl group). The term “monovalent non-aromatic condensed polycyclic group” as used herein may refer to a monovalent group having two or more rings condensed with each other, only carbon atoms as ring-forming atoms (for example, having 8 to 60 carbon atoms), and no aromaticity in its entire molecular structure (the overall structure is non-aromatic). A non-limiting example of the monovalent non-aromatic condensed polycyclic group is a fluorenyl group. The term “divalent non-aromatic condensed polycyclic group” as used herein may refer to a divalent group having the same structure as the monovalent non-aromatic condensed polycyclic group. The term “monovalent non-aromatic condensed heteropolycyclic group” as used herein may refer to a monovalent group having two or more rings condensed to each other, at least one heteroatom selected from N, O, Si, P, and S, other than carbon atoms (for example, 1 to 60 carbon atoms), as a ring-forming atom, and no aromaticity in its entire molecular structure (the overall structure is non-aromatic). A non-limiting example of the monovalent non-aromatic condensed heteropolycyclic group is a carbazolyl group. The term “divalent non-aromatic condensed heteropolycyclic group” as used herein may refer to a divalent group having the same structure as the monovalent non-aromatic condensed heteropolycyclic group. The term “C5-C60carbocyclic group” as used herein may refer to a monocyclic or polycyclic group having 5 to 60 carbon atoms in which ring-forming atoms are carbon atom only. The term “C5-C60carbocyclic group” as used herein may refer to an aromatic carbocyclic group or a non-aromatic carbocyclic group. The C5-C60carbocyclic group may be a ring, such as benzene, a monovalent group, such as a phenyl group, or a divalent group, such as a phenylene group. In one or more embodiments, depending on the number of substituents connected to the C5-C60carbocyclic group, the C5-C60carbocyclic group may be a trivalent group or a quadrivalent group. The term “C1-C60heterocyclic group” as used herein may refer to a group having the same structure as the C5-C60carbocyclic group, except that as a ring-forming atom, at least one heteroatom selected from N, O, Si, P, and S is used in addition to carbon atoms (the number of carbon atoms may be in a range of 1 to 60). In the present specification, at least one substituent of the substituted C5-C60carbocyclic group, the substituted C1-C60heterocyclic group, the substituted C3-C10cycloalkylene group, the substituted C1-C10heterocycloalkylene group, the substituted C3-C10cycloalkenylene group, the substituted C1-C10heterocycloalkenylene group, the substituted C6-C60arylene group, the substituted C1-C60heteroarylene group, the substituted divalent non-aromatic condensed polycyclic group, the substituted divalent non-aromatic condensed heteropolycyclic group, the substituted C1-C60alkyl group, the substituted C2-C60alkenyl group, the substituted C2-C60alkynyl group, the substituted C1-C60alkoxy group, the substituted C3-C10cycloalkyl group, the substituted C1-C10heterocycloalkyl group, the substituted C3-C10cycloalkenyl group, the substituted C1-C10heterocycloalkenyl group, the substituted C6-C60aryl group, the substituted C6-C60aryloxy group, the substituted C6-C60arylthio group, the substituted C1-C60heteroaryl group, the substituted monovalent non-aromatic condensed polycyclic group, and the substituted monovalent non-aromatic condensed heteropolycyclic group may be selected from:deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, and a C1-C60alkoxy group;a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, and a C1-C60alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —Si(Q11)(Q12)(Q13), —N(Q11)(Q12), —B(Q11)(Q12), —C(═O)(Q11), —S(═O)2(Q11), and —P(═O)(Q11)(Q12);a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group;a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —Si(Q21)(Q22)(Q23), —N(Q21)(Q22), —B(Q21)(Q22), —C(═O)(Q21), —S(═O)2(Q21), and —P(═O)(Q21)(Q22); and—Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)2(Q31), and —P(═O)(Q31)(Q32), andQ11to Q13, Q21to Q23, and Q31to Q33may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C10heterocycloalkenyl group, a C6-C60aryl group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, a biphenyl group, and a terphenyl group. The term “Ph” as used herein represents a phenyl group, the term “Me” as used herein represents a methyl group, the term “Et” as used herein represents an ethyl group, the term “tert-Bu” or “But” as used herein, represents a tert-butyl group, the term “OMe” as used herein represents a methoxy group, and “D” represents deuterium. The term “biphenyl group” as used herein may refer to a “phenyl group substituted with a phenyl group. The “biphenyl group” may be a “substituted phenyl group” having a “C6-C60aryl group” as a substituent. The term “terphenyl group” as used herein may refer to a “phenyl group substituted with a biphenyl group. The “terphenyl group” may be a “substituted phenyl group” having, as a substituent, a “C6-C60aryl group substituted with a C6-C60aryl group”. * and *′ as used herein, unless defined otherwise, each refer to a binding site to a neighboring atom in a corresponding formula. Hereinafter, an organic light-emitting device according to an embodiment will be described in detail with reference to Synthesis Examples and Examples. EXAMPLES Comparative Example 1 As a substrate and an anode, a first glass substrate from Corning 15 Ω/cm2with ITO(100 Å), a second glass substrate with Ag(1,000 Å), and a third glass substrate from Corning 15 Ω/cm2with ITO(100 Å) was formed, and the substrates were cut to a size of 50 mm×50 mm×0.7 mm, sonicated with isopropyl alcohol and pure water each for 5 minutes, and then cleaned by exposure to ultraviolet rays and ozone for 30 minutes, respectively. Then, the first to third glass substrates were sequentially stacked in a vacuum deposition apparatus. HT3 and HAT-CN were deposited on the anode at a ratio of 9:1 to form a hole injection layer having a thickness of 100 Å. TCTA (100 Å), HAT-CN (50 Å), and NPB (100 Å) were sequentially deposited on the hole injection layer to form a hole transport layer. HT1 was deposited on the hole transport layer to form an HT-auxiliary layer having a thickness of 100 Å, ADN and DPAVBi (an amount of DPAVBi was 5 wt %) were co-deposited to form an emission layer having a thickness of 200 Å, and BAlq was deposited to form an ET-auxiliary layer having a thickness of 50 Å. BIPO and LiQ were deposited on the ET-auxiliary layer at a ratio of 5:5 to form an electron transport layer having a thickness of 200 Å, and Yb was deposited to form an electron injection layer having a thickness of 13 Å, thereby forming an electron transport region. AgMg was deposited on the electron transport region to form a cathode having a thickness of 85 Å, and CP1 was deposited on the cathode to a thickness of 700 Å, thereby completing the manufacture of an organic light-emitting device. Comparative Example 2 As a substrate and an anode, a first glass substrate from Corning 15 Ω/cm2with ITO(100 Å), a second glass substrate with Ag(1,000 Å), and a third glass substrate from Corning 15 Ω/cm2with ITO(100 Å), and the substrates were cut to a size of 50 mm×50 mm×0.7 mm, sonicated with isopropyl alcohol and pure water each for 5 minutes, and then cleaned by exposure to ultraviolet rays and ozone for 30 minutes, respectively. Then, the first to third glass substrates were sequentially stacked in a vacuum deposition apparatus. HT3 and HAT-CN were deposited on the anode at a ratio of 9:1 to form a hole injection layer having a thickness of 100 Å. TCTA (100 Å), HAT-CN (50 Å), and NPB (100 Å) were sequentially deposited on the hole injection layer to form a hole transport layer. m-MTDATA was deposited on the hole transport layer to form a first HT-auxiliary layer having a thickness of 100 Å, ADN and DPAVBi (an amount of DPAVBi was 5 wt %) were co-deposited to form a first emission layer having a thickness of 200 Å, and BAlq was deposited to form a first ET-auxiliary layer having a thickness of 50 Å. BIPO and LiQ were deposited on the first ET-auxiliary layer at a ratio of 5:5 to form an electron transport layer having a thickness of 200 Å, thereby forming a first light-emitting unit. BCP and Yb (an amount of Yb was 1 wt %) were co-deposited on the first light-emitting unit to form an n-type charge generation layer having a thickness of 150 Å, and HT3:HAT-CN (an amount of HAT-CN was 10 wt %, 100 Å) were deposited to form a p-type charge generation layer, thereby forming a charge generation layer. HT3 was deposited on the charge generation layer to form a second HT-auxiliary layer having a thickness of 190 Å, ADN and DPAVBi (an amount of DPAVBi was 5 wt %) were co-deposited to form a second emission layer having a thickness of 200 Å, and BAlq was deposited to form a second ET-auxiliary layer having a thickness of 50 Å. BIPO and LiQ were deposited on the second ET-auxiliary layer at a ratio of 5:5 to form an electron transport layer having a thickness of 50 Å, and Yb was deposited to form an electron injection layer having a thickness of 13 Å, thereby forming an electron transport region, and thereby forming a second light-emitting unit. AgMg was deposited on the electron transport region to form a cathode having a thickness of 85 Å, and CP1 was deposited on the cathode to a thickness of 700 Å, thereby completing the manufacture of an organic light-emitting device. Comparative Example 3 As a substrate and an anode, a first glass substrate from Corning 15 Ω/cm2with ITO(100 Å) was formed, a second glass substrate with Ag(1,000 Å) was formed, and a third glass substrate from Corning 15 Ω/cm2with ITO(100 Å) was formed, and the substrates were cut to a size of 50 mm×50 mm×0.7 mm, sonicated with isopropyl alcohol and pure water each for 5 minutes, and then cleaned by exposure to ultraviolet rays and ozone for 30 minutes, respectively. Then, the first to third glass substrates were sequentially stacked in a vacuum deposition apparatus. HT3 and HAT-CN were deposited on the anode at a ratio of 9:1 to form a hole injection layer having a thickness of 100 Å. TCTA (100 Å), HAT-CN (50 Å), and NPB (100 Å) were sequentially deposited on the hole injection layer to form a hole transport layer. m-MTDATA was deposited on the hole transport layer to form a first HT-auxiliary layer having a thickness of 100 Å, ADN and DPAVBi (an amount of DPAVBi was 5 wt %) were co-deposited to form a first emission layer having a thickness of 200 Å, and BAlq was deposited to form a first ET-auxiliary layer having a thickness of 50 Å. BIPO and LiQ were deposited on the first ET-auxiliary layer at a ratio of 5:5 to form an electron transport layer having a thickness of 200 Å, thereby forming a first light-emitting unit. BCP and Yb (an amount of Yb was 1 wt %) were co-deposited on the first light-emitting unit to form an n-type charge generation layer having a thickness of 150 Å, and HT3:HAT-CN (an amount of HAT-CN was 10 wt %, 100 Å) were co-deposited to form a p-type charge generation layer, thereby forming a first charge generation layer. m-MTDATA was deposited on the first charge generation layer to form a second HT-auxiliary layer having a thickness of 100 Å, ADN and DPAVBi (an amount of DPAVBi was 5 wt %) were co-deposited to form a second emission layer having a thickness of 200 Å, and BAlq was deposited to form a second ET-auxiliary layer having a thickness of 50 Å. BIPO and LiQ were deposited on the second ET-auxiliary layer at a ratio of 5:5 to form an electron transport layer having a thickness of 200 Å, thereby forming an electron transport region, and thereby forming a second light-emitting unit. BCP and Yb (an amount of Yb was 1 wt %) were co-deposited on the second light-emitting unit to form an n-type charge generation layer having a thickness of 150 Å, and HT3:HAT-CN (10%, 100 Å) were deposited to form a p-type charge generation layer, thereby forming a second charge generation layer. m-MTDATA was deposited on the second charge generation layer to form a third HT-auxiliary layer having a thickness of 100 Å, ADN and DPAVBi (an amount of DPAVBi was 5 wt %) were co-deposited to form a third emission layer having a thickness of 200 Å, and BAlq was deposited to form a third ET-auxiliary layer having a thickness of 50 Å. BIPO and LiQ were deposited on the third ET-auxiliary layer at a ratio of 5:5 to a thickness of 200 Å, thereby forming an electron transport layer, and Yb was deposited to form an electron injection layer having a thickness of 13 Å, thereby forming an electron transport region, and thereby forming a third light-emitting unit. AgMg was deposited on the electron transport region to form a cathode having a thickness of 85 Å, and CP1 was deposited on the cathode to a thickness of 700 Å, thereby completing the manufacture of an organic light-emitting device. Example 1 As a substrate and an anode, a first glass substrate from Corning 15 Ω/cm2with ITO(100 Å) was formed, a second glass substrate with Ag(1,000 Å) was formed, and a third glass substrate from Corning 15 Ω/cm2with ITO(100 Å) was formed, and the substrates were cut to a size of 50 mm×50 mm×0.7 mm, sonicated with isopropyl alcohol and pure water each for 5 minutes, and then cleaned by exposure to ultraviolet rays and ozone for 30 minutes, respectively. Then, the first to third glass substrates were sequentially stacked in a vacuum deposition apparatus. HT3 and HAT-CN were deposited on the anode at a ratio of 9:1 to form a hole injection layer having a thickness of 100 Å. TCTA (100 Å), HAT-CN (50 Å), and NPB (100 Å) were sequentially deposited on the hole injection layer to form a hole transport layer. m-MTDATA was deposited on the hole transport layer to form a first HT-auxiliary layer having a thickness of 100 Å, ADN and DPAVBi (an amount of DPAVBi was 5 wt %) were co-deposited to form a first emission layer having a thickness of 200 Å, BAlq was deposited to form a first ET-auxiliary layer having a thickness of 50 Å, and Compound 1 and LiQ were deposited on the first ET-auxiliary layer at a ratio of 5:5 to form a first electron layer having a thickness of 200 Å, thereby forming a first light-emitting unit. BCP and Yb (an amount of Yb was 1 wt %) were co-deposited on the first light-emitting unit to form an n-type charge generation layer having a thickness of 150 Å, and HT3 was deposited to form a p-type charge generation layer having a thickness of 100 Å, thereby forming a first charge generation layer. In this case, a LUMO energy level difference between the first electron layer and the n-type charge generation layer was 0.15 eV. HT3 was deposited on the first charge generation layer to form a second HT-auxiliary layer having a thickness of 190 Å, ADN and DPAVBi (an amount of DPAVBi was 5 wt %) were co-deposited to form a second emission layer having a thickness of 200 Å, BAlq was deposited to form a second ET-auxiliary layer having a thickness of 50 Å, and Compound 1 and LiQ were deposited on the first ET-auxiliary layer at a ratio of 5:5 to form a second electron transport layer having a thickness of 200 Å, thereby forming a second light-emitting unit. BCP and Yb (an amount of Yb was 1 wt %) were co-deposited on the second light-emitting unit to form an n-type charge generation layer having a thickness of 150 Å, and HT3:HAT-CN (an amount of HAT-CN was 10 wt %, 100 Å) were deposited to form a p-type charge generation layer having a thickness of 100 Å, thereby forming a second charge generation layer. HT3 was deposited on the second charge generation layer to form a third HT-auxiliary layer having a thickness of 190 Å, ADN and DPAVBi (an amount of DPAVBi was 5 wt %) were co-deposited to form a third emission layer having a thickness of 200 Å, and BAlq was deposited to form a third ET-auxiliary layer having a thickness of 50 Å. Compound 101 and LiQ were deposited on the third ET-auxiliary layer at a ratio of 5:5 to form a third electron transport layer having a thickness of 50 Å, and Yb was deposited to form an electron injection layer having a thickness of 13 Å, thereby forming an electron transport region, and thereby forming a third light-emitting unit. AgMg was deposited on the electron transport region to form a cathode having a thickness of 85 Å, CP1 was deposited on the cathode to a thickness of 700 Å, thereby completing the manufacture of an organic light-emitting device. In this case, a LUMO energy level difference between the third electron transport layer and ADN included in the third emission layer was 0.2 eV. Comparative Example 4 As a substrate and an anode, a first glass substrate form Corning 15 Ω/cm2with ITO(100 Å), a second glass substrate with Ag(100 Å), and a third glass substrate form Corning 15 Ω/cm2with ITO(100 Å), and the substrates were cut to a size of 50 mm×50 mm×0.7 mm, sonicated with isopropyl alcohol and pure water each for 5 minutes, and then cleaned by exposure to ultraviolet rays and ozone for 30 minutes, respectively. Then, the first to third glass substrates were sequentially stacked in a vacuum deposition apparatus. HT3 and HAT-CN were deposited on the anode at a ratio of 9:1 to form a hole injection layer having a thickness of 100 Å. TCTA (100 Å), HAT-CN (50 Å), and NPB (100 Å) were sequentially deposited on the hole injection layer to form a hole transport layer. m-MTDATA was deposited on the hole transport layer to form a first HT-auxiliary layer having a thickness of 100 Å, ADN and DPAVBi (an amount of DPAVBi was 5 wt %) were co-deposited to form a first emission layer having a thickness of 200 Å, BAlq was deposited to form a first ET-auxiliary layer having a thickness of 50 Å, and anthracene derivatives and LiQ were deposited on the first ET-auxiliary layer at a ratio of 5:5 to form an electron transport region having a thickness of 200 Å, thereby forming a first light-emitting unit. Anthracene derivatives and Yb (an amount of Yb was 1 wt %) were co-deposited on the first light-emitting unit to form an n-type charge generation layer having a thickness of 150 Å, and HT3 was deposited to form a p-type charge generation layer having a thickness of 100 Å, thereby forming a first charge generation layer. In this case, a LUMO energy level difference between the first ET-auxiliary layer and the n-type charge generation layer was 0.03 eV. HT3 was deposited on the first charge generation layer to form a second HT-auxiliary layer having a thickness of 190 Å, ADN and DPAVBi (an amount of DPAVBi was 5 wt %) were co-deposited to form a second emission layer having a thickness of 200 Å, and BAlq was deposited to form a second ET-auxiliary layer having a thickness of 50 Å. Compound 101 and LiQ were deposited on the second ET-auxiliary layer at a ratio of 5:5 to form an electron transport layer having a thickness of 50 Å, and Yb was deposited to form an electron injection layer having a thickness of 13 Å, thereby forming an electron transport region, and thereby forming a third light-emitting unit. AgMg was deposited on the electron transport region to form a cathode having a thickness of 85 Å, and CP1 was deposited on the cathode to a thickness of 700 Å, thereby completing the manufacture of an organic light-emitting device. Comparative Example 5 An organic light-emitting device was manufactured in substantially the same manner as in Example 1, except that ET1 was used instead of compound 1 to form the first electron transport layer. In this case, a LUMO absolute value difference between the first electron transport layer and the n-type charge generation layer was 0.4 eV. Evaluation Example 1 The capacitance-voltage of each of the organic light-emitting devices manufactured according to Example 1 and Comparative Examples 1 to 5 was measured, and results thereof are illustrated inFIGS.3and4, and the driving voltage (V), the efficiency (cd/A) and the luminance (nit) at the same voltage (10.5 V) were measured, and results thereof are shown inFIGS.5to7and Table 1. TABLE 1Driving voltageEfficiencyluminance(V)(cd/A)(nit)Comparative10.429.82,000 nitExample 3Example 110.232.32,000 nitComparative10.232.22,000 nitExample 4Comparative10.634.52,000 nitExample 5 Referring toFIG.3, in the case of the devices of Comparative Examples 2 and 3, inflection points not shown in the single device of Comparative Example 1 show that the balance of charges injected from individual charge generation layers has a non-uniform state. Referring toFIG.4together, in the case of the organic light-emitting device of Example 1, it is confirmed that the charge balance is improved due to the application of initial injection characteristics at 6 V to 7 V and improved injection characteristics after 8.5 V. Furthermore, both initial injection characteristics at 6 V to 7 V and driving voltage characteristics after 8.5 V in which recombination is shown are improved. Referring toFIGS.5and6and Table 1, the organic light-emitting device of Example 1 may have a low driving voltage and excellent efficiency, as compared with the organic light-emitting devices of Comparative Examples 3 to 5. Referring toFIG.7, it is confirmed that, as the number of charge generation layers increases, device instability increases, and thus, a difference in driving voltage change over time occurs. Therefore, in order to eliminate (or reduce) such device instability, it is necessary (or desired) to ensure appropriateness of the configuration of each electron transport region as described in the present disclosure. The configuration according to one or more embodiments may improve the instability of the characteristics of electron injection occurring from the charge generation layer, thereby improving both the efficiency and the lifespan of the device. The organic light-emitting device may have a low driving voltage, a high efficiency, and a long lifespan. As used herein, the terms “use,” “using,” and “used” may be considered synonymous with the terms “utilize,” “utilizing,” and “utilized,” respectively. In addition, the terms “substantially,” “about,” and similar terms are used as terms of approximation and not as terms of degree, and are intended to account for the inherent deviations in measured or calculated values that would be recognized by those of ordinary skill in the art. Also, any numerical range recited herein is intended to include a11 subranges of the same numerical precision subsumed within the recited range. For example, a range of “1.0 to 10.0” is intended to include a11 subranges between (and including) the recited minimum value of 1.0 and the recited maximum value of 10.0, that is, having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as, for example, 2.4 to 7.6. Any maximum numerical limitation recited herein is intended to include a11 lower numerical limitations subsumed therein and any minimum numerical limitation recited in this specification is intended to include a11 higher numerical limitations subsumed therein. Accordingly, Applicant reserves the right to amend this specification, including the claims, to expressly recite any sub-range subsumed within the ranges expressly recited herein. It should be understood that embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should typically be considered as available for other similar features or aspects in other embodiments. While one or more embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present disclosure as defined by the following claims and their equivalents. | 174,075 |
11944003 | DETAILED DESCRIPTION An organic light-emitting device according to an embodiment may include a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer. The organic layer may include a first compound and a second compound. The first electrode may be an anode, the second electrode may be a cathode, and the first electrode and the second electrode are the same as described below. The first compound may be represented by one selected from Formulae 1A and 1B, and the second compound may be represented by one selected from Formulae 2A to 2C: In Formulae 1A, 1B, and 2A to 2C, L1to L12, L21, L22, L31to L33, and L41to L43may each independently be selected from a substituted or unsubstituted C3-C10cycloalkylene group, a substituted or unsubstituted C1-C10heterocycloalkylene group, a substituted or unsubstituted C3-C10cycloalkenylene group, a substituted or unsubstituted C1-C10heterocycloalkenylene group, a substituted or unsubstituted C6-C60arylene group, a substituted or unsubstituted C1-C60heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group. For example, L1to L12, L21, L22, L31to L33, and L41to L43may each independently be selected from: a phenylene group, a pentalenylene group, an indenylene group, a naphthylene group, an azulenylene group, a heptalenylene group, an indacenylene group, an acenaphthylene group, a fluorenylene group, a spiro-fluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenalenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a naphthacenylene group, a picenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a rubicenylene group, a coronenylene group, an ovalenylene group, a pyrrolylene group, a thiophenylene group, a furanylene group, an imidazolylene group, a pyrazolylene group, a thiazolylene group, an isothiazolylene group, an oxazolylene group, an isoxazolylene group, a pyridinylene group, a pyrazinylene group, a pyrimidinylene group, a pyridazinylene group, an isoindolylene group, an indolylene group, an indazolylene group, a purinylene group, a quinolinylene group, an isoquinolinylene group, a benzoquinolinylene group, a phthalazinylene group, a naphthyridinylene group, a quinoxalinylene group, a quinazolinylene group, a cinnolinylene group, a carbazolylene group, a phenanthridinylene group, an acridinylene group, a phenanthrolinylene group, a phenazinylene group, a benzimidazolylene group, a benzofuranylene group, a benzothiophenylene group, an isobenzothiazolylene group, a benzoxazolylene group, an isobenzoxazolylene group, a triazolylene group, a tetrazolylene group, an oxadiazolylene group, a triazinylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a thiadiazolylene group, an imidazopyridinylene group, and an imidazopyrimidinylene group; and a phenylene group, a pentalenylene group, an indenylene group, a naphthylene group, an azulenylene group, a heptalenylene group, an indacenylene group, an acenaphthylene group, a fluorenylene group, a spiro-fluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenalenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a naphthacenylene group, a picenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a rubicenylene group, a coronenylene group, an ovalenylene group, a pyrrolylene group, a thiophenylene group, a furanylene group, an imidazolylene group, a pyrazolylene group, a thiazolylene group, an isothiazolylene group, an oxazolylene group, an isoxazolylene group, a pyridinylene group, a pyrazinylene group, a pyrimidinylene group, a pyridazinylene group, an isoindolylene group, an indolylene group, an indazolylene group, a purinylene group, a quinolinylene group, an isoquinolinylene group, a benzoquinolinylene group, a phthalazinylene group, a naphthyridinylene group, a quinoxalinylene group, a quinazolinylene group, a cinnolinylene group, a carbazolylene group, a phenanthridinylene group, an acridinylene group, a phenanthrolinylene group, a phenazinylene group, a benzimidazolylene group, a benzofuranylene group, a benzothiophenylene group, an isobenzothiazolylene group, a benzoxazolylene group, an isobenzoxazolylene group, a triazolylene group, a tetrazolylene group, an oxadiazolylene group, a triazinylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a thiadiazolylene group, an imidazopyridinylene group, and an imidazopyrimidinylene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, an isoindolyl group, an indolyl group, an indazolyl group, a purinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a carbazolyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, a triazolyl group, a tetrazolyl group, an oxadiazolyl group, a triazinyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a thiadiazolyl group, an imidazopyridinyl group, and an imidazopyrimidinyl group. In one or more embodiments, L1to L12, L21, L22, L31to L33, and L41to L43may each independently be selected from groups represented by Formulae 3-1 to 3-41: wherein, in Formulae 3-1 to 3-41, Y1may be O, S, C(Z3)(Z4), N(Z5), or Si(Z6)(Z7), Z1to Z7may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a pyrenyl group, a chrysenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, a triazinyl group, and —Si(Q33)(Q34)(Q35), wherein Q33to Q35may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group, d2 may be 1 or 2, d3 may be an integer from 1 to 3, d4 may be an integer from 1 to 4, d5 may be an integer from 1 to 5, d6 may be an integer from 1 to 6, d8 may be an integer from 1 to 8, and * and *′ each indicate a binding site to a neighboring atom. In one or more embodiments, L1to L12, L21, L22, L31to L33, and L41to L43may each independently be selected from groups represented by Formulae 4-1 to 4-36: wherein * and in Formulae 4-1 to 4-36 each indicate a binding site to a neighboring atom. a1 to a12, a21, a22, a31 to a33, and a41 to a43 in Formulae 1A, 1B, and 2A to 2C may each independently be an integer from 0 to 3. a1 indicates the number of L1(s), wherein when a1 is zero, *-(L1)a1-*′ may be a single bond, and when a1 is two or more, two or more L1(s) may be identical to or different from each other. a2 to a12, a21, a22, a31 to a33, and a41 to a43 may be understood by referring to the descriptions provided in connection with a1 and the structures of Formulae 1A, 1B, and 2A to 2C. For example, a1 to a12, a21, a22, a31 to a33, and a41 to a43 may each independently be 0, 1, or 2. In one or more embodiments, a1 to a12, a21, a22, a31 to a33, and a41 to a43 may each independently be 0 or 1. Ar1to Ar8, Ar21, Ar31, and Ar41in Formulae 1A, 1B, and 2A to 2C may each independently be selected from a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group. For example, Ar1to Ar8, Ar21, Ar31, and Ar41may each independently be selected from a substituted or unsubstituted phenyl group, a substituted or unsubstituted biphenyl group, a substituted or unsubstituted terphenyl group, a substituted or unsubstituted pentalenyl group, a substituted or unsubstituted indenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted azulenyl group, a substituted or unsubstituted heptalenyl group, a substituted or unsubstituted indacenyl group, a substituted or unsubstituted acenaphthyl group, a substituted or unsubstituted fluorenyl group, a substituted or unsubstituted spiro-fluorenyl group, a substituted or unsubstituted benzofluorenyl group, a substituted or unsubstituted dibenzofluorenyl group, a substituted or unsubstituted phenalenyl group, a substituted or unsubstituted phenanthrenyl group, a substituted or unsubstituted anthracenyl group, a substituted or unsubstituted fluoranthenyl group, a substituted or unsubstituted triphenylenyl group, a substituted or unsubstituted pyrenyl group, a substituted or unsubstituted chrysenyl group, a substituted or unsubstituted naphthacenyl group, a substituted or unsubstituted picenyl group, a substituted or unsubstituted perylenyl group, a substituted or unsubstituted pentaphenyl group, a substituted or unsubstituted hexacenyl group, a substituted or unsubstituted pentacenyl group, a substituted or unsubstituted rubicenyl group, a substituted or unsubstituted coronenyl group, a substituted or unsubstituted ovalenyl group, a substituted or unsubstituted pyrrolyl group, a substituted or unsubstituted thiophenyl group, a substituted or unsubstituted furanyl group, a substituted or unsubstituted imidazolyl group, a substituted or unsubstituted pyrazolyl group, a substituted or unsubstituted thiazolyl group, a substituted or unsubstituted isothiazolyl group, a substituted or unsubstituted oxazolyl group, a substituted or unsubstituted isoxazolyl group, a substituted or unsubstituted pyridinyl group, a substituted or unsubstituted pyrazinyl group, a substituted or unsubstituted pyrimidinyl group, a substituted or unsubstituted pyridazinyl group, a substituted or unsubstituted isoindolyl group, a substituted or unsubstituted indolyl group, a substituted or unsubstituted indazolyl group, a substituted or unsubstituted purinyl group, a substituted or unsubstituted quinolinyl group, a substituted or unsubstituted isoquinolinyl group, a substituted or unsubstituted benzoquinolinyl group, a substituted or unsubstituted phthalazinyl group, a substituted or unsubstituted naphthyridinyl group, a substituted or unsubstituted quinoxalinyl group, a substituted or unsubstituted quinazolinyl group, a substituted or unsubstituted cinnolinyl group, a substituted or unsubstituted carbazolyl group, a substituted or unsubstituted phenanthridinyl group, a substituted or unsubstituted acridinyl group, a substituted or unsubstituted phenanthrolinyl group, a substituted or unsubstituted phenazinyl group, a substituted or unsubstituted benzimidazolyl group, a substituted or unsubstituted benzofuranyl group, a substituted or unsubstituted benzothiophenyl group, a substituted or unsubstituted isobenzothiazolyl group, a substituted or unsubstituted benzoxazolyl group, a substituted or unsubstituted isobenzoxazolyl group, a substituted or unsubstituted triazolyl group, a substituted or unsubstituted tetrazolyl group, a substituted or unsubstituted oxadiazolyl group, a substituted or unsubstituted triazinyl group, a substituted or unsubstituted benzocarbazolyl group, a substituted or unsubstituted dibenzocarbazolyl group, a substituted or unsubstituted thiadiazolyl group, a substituted or unsubstituted imidazopyridinyl group, a substituted or unsubstituted imidazopyrimidinyl group, a substituted or unsubstituted benzoxanthenyl group, a substituted or unsubstituted dibenzodioxinyl group, and —Si(Q1)(Q2)(Q3), and at least one substituent selected from a substituent(s) of the substituted phenyl group, the substituted biphenyl group, the substituted terphenyl group, the substituted pentalenyl group, the substituted indenyl group, the substituted naphthyl group, the substituted azulenyl group, the substituted heptalenyl group, the substituted indacenyl group, the substituted acenaphthyl group, the substituted fluorenyl group, the substituted spiro-fluorenyl group, the substituted benzofluorenyl group, the substituted dibenzofluorenyl group, the substituted phenalenyl group, the substituted phenanthrenyl group, the substituted anthracenyl group, the substituted fluoranthenyl group, the substituted triphenylenyl group, the substituted pyrenyl group, the substituted chrysenyl group, the substituted naphthacenyl group, the substituted picenyl group, the substituted perylenyl group, the substituted pentaphenyl group, the substituted hexacenyl group, the substituted pentacenyl group, the substituted rubicenyl group, the substituted coronenyl group, the substituted ovalenyl group, the substituted pyrrolyl group, the substituted thiophenyl group, the substituted furanyl group, the substituted imidazolyl group, the substituted pyrazolyl group, the substituted thiazolyl group, the substituted isothiazolyl group, the substituted oxazolyl group, the substituted isoxazolyl group, the substituted pyridinyl group, the substituted pyrazinyl group, the substituted pyrimidinyl group, the substituted pyridazinyl group, the substituted isoindolyl group, the substituted indolyl group, the substituted indazolyl group, the substituted purinyl group, the substituted quinolinyl group, the substituted isoquinolinyl group, the substituted benzoquinolinyl group, the substituted phthalazinyl group, the substituted naphthyridinyl group, the substituted quinoxalinyl group, the substituted quinazolinyl group, the substituted cinnolinyl group, the substituted carbazolyl group, the substituted phenanthridinyl group, the substituted acridinyl group, the substituted phenanthrolinyl group, the substituted phenazinyl group, the substituted benzimidazolyl group, the substituted benzofuranyl group, the substituted benzothiophenyl group, the substituted isobenzothiazolyl group, the substituted benzoxazolyl group, the substituted isobenzoxazolyl group, the substituted triazolyl group, the substituted tetrazolyl group, the substituted oxadiazolyl group, the substituted triazinyl group, the substituted benzocarbazolyl group, the substituted dibenzocarbazolyl group, the substituted thiadiazolyl group, the substituted imidazopyridinyl group, the substituted imidazopyrimidinyl group, the substituted benzoxanthenyl group, and the substituted dibenzodioxinyl group may be selected from: deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C20alkyl group, and a C1-C20alkoxy group; a C1-C20alkyl group and a C1-C20alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, and a phosphoric acid group or a salt thereof; a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a pyrenyl group, a chrysenyl group, a carbazolyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, and a dibenzofuranyl group; a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a pyridinyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a pyrenyl group, a chrysenyl group, a carbazolyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, and a dibenzofuranyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a pyridinyl group, a carbazolyl group, and a dibenzofuranyl group; and —Si(Q31)(Q32)(Q33), wherein Q31to Q33may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a pyrenyl group, a chrysenyl group, and a carbazolyl group. In one or more embodiments, Ar1to Ar8, Ar21, Ar31, and Ar41may each independently be selected from groups represented by Formulae 5-1 to 5-80: wherein, in Formulae 5-1 to 5-80, Y11may be O, S, C(Z13)(Z14), N(Z15), or Si(Z16)(Z17), Z11to Z17may each independently be selected from: hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C20alkyl group, and a C1-C20alkoxy group; a C1-C20alkyl group and a C1-C20alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, and a phosphoric acid group or a salt thereof; a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a pyrenyl group, a chrysenyl group, a carbazolyl group, a benzocarbazolyl group, and a dibenzocarbazolyl group; a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a pyridinyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a pyrenyl group, a chrysenyl group, a carbazolyl group, a benzocarbazolyl group, and a dibenzocarbazolyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a naphthyl group, and a pyridinyl group; and —Si(Q31)(Q32)(Q33), Z13and Z14may optionally be linked to form a saturated or unsaturated ring, Q33to Q35may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group, e2 may be 1 or 2, e3 may be an integer from 1 to 3, e4 may be an integer from 1 to 4, e5 may be an integer from 1 to 5, e6 may be an integer from 1 to 6, e7 may be an integer from 1 to 7, e8 may be an integer from 1 to 8, e9 may be an integer from 1 to 9, and * indicates a binding site to a neighboring atom. In one or more embodiments, Ar1to Ar8, Ar21, Ar31, and Ar41may each independently be selected from groups represented by Formulae 6-1 to 6-167: wherein * in Formulae 6-1 to 6-167 indicates a binding site to a neighboring atom. b1 to b8, b21, b31, and b41 in Formulae 1A, 1B, and 2A to 2C may each independently be an integer from 1 to 5. b1 indicates the number of Ar1(s), wherein when b1 is two or more, two or more Ar1(s) may be identical to or different from each other. b2 to b8, b21, b31, and b41 may be understood by referring to the descriptions provided in connection with b1 and the structures of Formulae 1A, 1B, and 2A to 2C. In one or more embodiments, b1 to b8, b21, b31, and b41 may each independently be 1 or 2, but are not limited thereto. In Formulae 1A and 1B, Ar1and Ar2may optionally be linked to form a saturated or unsaturated ring, Ar3and Ar4may optionally be linked to form a saturated or unsaturated ring, Ar5and Ar6may optionally be linked to form a saturated or unsaturated ring, and Ar7and Ar8may optionally be linked to form a saturated or unsaturated ring. In one or more embodiments, at least one selected from in Formulae 1A and 1B may be selected from groups represented by Formula 9-1 or 9-2: wherein, in Formulae 9-1 and 9-2, Y31may be selected from O, S, C(Z33)(Z34), N(Z35), and Si(Z36)(Z37), Z31to Z37may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a pyrenyl group, a chrysenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, a triazinyl group, and —Si(Q31)(Q32)(Q33), wherein Q31to Q33may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group, g4 may be an integer from 0 to 4, and * indicates a binding site to a neighboring atom. In Formulae 1A and 1B, n1 to n4, n7, and n8 may each independently be an integer from 0 to 4, and n5 and n6 may each independently be an integer from 0 to 5, provided that the sum of n1, n2, n3, and n4 is one or more and the sum of n5, n6, n7, and n8 is one or more. n1 indicates the number of wherein when n1 is two or more, two or more may be identical to or different from each other. In one or more embodiments, n1 to n4, n7, and n8 may each independently be 0 or 1, and n5 and n6 may each independently be 0 or 1. In Formulae 2A to 2C, A21, A31, A32, A41, and A42may each be a group represented by Formula 10, and m21, m31, m32, m41, and m42 may each independently be an integer from 1 to 3. m21 indicates the number of A21(s), wherein when m1 is two or more, two or more A21(s) may be identical to or different from each other. In Formulae 2A to 2C, n21 may be an integer from 1 to 3, n31 and n32 may each independently be an integer from 0 to 3, provided that n31+n32 is one or more, and n41 and n42 may each independently be an integer from 0 to 3, provided that n41+n42 is one or more. n21 in Formula 2A indicates the number of *-[(L22)a22-(A21)m21](s), wherein, when n21 is two or more, two or more *-[(L22)a22-(A21)m21](s) may be identical to or different from each other. n31, n32, n41, and n42 may be understood by referring to the descriptions provided in connection with n21 and the structures of Formulae 2A to 2C. In one or more embodiments, n21 may be 1 or 2, n31 and n32 may each independently be 0 or 1, and n41 and n42 may each independently be 0 or 1. In Formula 10, X1may be O or S, and X2may be selected from a single bond, O, and S. In one or more embodiments, X1may be O or S, and X2may be a single bond. Ring B1and ring B2in Formula 10 may each independently be selected from benzene and naphthalene. In one or more embodiments, the group represented by Formula 10 may be represented by one selected from Formulae 10A to 10P: In Formulae 10A to 10P, X1, R51, R52, c51, and c52 are the same as described above, and * indicates a binding site to a neighboring atom. R1to R8, R21, R31, R32, R41, R42, R51, and R52in Formulae 1A, 1B, 2A to 2C, and 10 may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a substituted or unsubstituted C1-C60alkyl group, a substituted or unsubstituted C2-C60alkenyl group, a substituted or unsubstituted C2-C60alkynyl group, a substituted or unsubstituted C1-C60alkoxy group, a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, and —Si(Q1)(Q2)(Q3). For example, R1to R8, R21, R31, R32, R41, R42, R51, and R52may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a substituted or unsubstituted C1-C20alkyl group, a substituted or unsubstituted C1-C20alkoxy group, a substituted or unsubstituted C6-C20aryl group, a substituted or unsubstituted C1-C20heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, and —Si(Q1)(Q2)(Q3). In one or more embodiments, R1to R8, R21, R31, R32, R41, R42, R51, and R52may each independently be selected from: hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C20alkyl group, and a C1-C20alkoxy group; a C1-C20alkyl group and a C1-C20alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, and a phosphoric acid group or a salt thereof; a phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, an isoindolyl group, an indolyl group, an indazolyl group, a purinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a carbazolyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, a triazolyl group, a tetrazolyl group, an oxadiazolyl group, a triazinyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a thiadiazolyl group, an imidazopyridinyl group, and an imidazopyrimidinyl group; a phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, an isoindolyl group, an indolyl group, an indazolyl group, a purinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a carbazolyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, a triazolyl group, a tetrazolyl group, an oxadiazolyl group, a triazinyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a thiadiazolyl group, an imidazopyridinyl group, and an imidazopyrimidinyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, an isoindolyl group, an indolyl group, an indazolyl group, a purinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a carbazolyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, a triazolyl group, a tetrazolyl group, an oxadiazolyl group, a triazinyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a thiadiazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, and —Si(Q33)(Q34)(Q35); and —Si(Q3)(Q4)(Q5), wherein Q3to Q5and Q33to Q35may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group. In one or more embodiments, R1to R8, R21, R31, R32, R41, R42, R51, and R52may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C10alkyl group, a C1-C10alkoxy group, groups represented by Formulae 7-1 to 7-76, and —Si(Q3)(Q4)(Q5), wherein Q3to Q5may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group: wherein, in Formulae 7-1 to 7-76, Y21may be O, S, C(Z23)(Z24), N(Z25), or Si(Z26)(Z27), Z21to Z27may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a naphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a pyrenyl group, a chrysenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, a triazinyl group, a biphenyl group, a terphenyl group, and —Si(Q13)(Q14)(Q15), Z23and Z24may optionally be linked to form a saturated or unsaturated ring, Q13to Q15may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group, f2 may be 1 or 2, 3 may be an integer from 1 to 3, f4 may be an integer from 1 to 4, f5 may be an integer from 1 to 5, f6 may be an integer from 1 to 6, f7 may be an integer from 1 to 7, f8 may be an integer from 1 to 8, f9 may be an integer from 1 to 9, and * indicates a binding site to a neighboring atom. In one or more embodiments, R1to R8may each independently be selected from groups represented by Formulae 8-1 to 8-161, and R21, R31, R32, R41, R42, R51, and R52may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, and —Si(Q3)(Q4)(Q5), wherein Q3to Q5may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group: wherein * in Formulae 8-1 to 8-161 indicates a binding site to a neighboring atom. In Formulae 1A, 1B, 2A to 2C, and 10, c1 to c4, c7, and c8 may each independently be an integer from 0 to 4, c5 and c6 may each independently be an integer from 0 to 5, c21 may be an integer from 0 to 8, c31 and c32 may each independently be an integer from 0 to 5, c41 and c42 may each independently be an integer from 0 to 4, and c51 and c52 may each independently be an integer from 0 to 6. c1 indicates the number of R1(s), wherein, when c1 is two or more, two or more R1(s) may be identical to or different from each other. c1 to c8, c21, c31, c32, c41, c42, c51, and c52 may be understood by referring to the descriptions provided in connection with c1 and the structures of Formulae 1A, 1B, 2A to 2C, and 10. In one or more embodiments, c1 to c8, c21, c31, c32, c41, c42, c51, and c52 may each independently be 0 or 1. In one or more embodiments, the first compound may be represented by one selected from Formulae 1A-1 to 1A-10 and 1B-1 to 1B-4: L1to L12, a1 to a12, Ar1to Ar8, b1 to b8, R1to R12, and c1 to c12 in Formulae 1A-1 to 1A-10 and 1B-1 to 1B-4 are the same as described above. In one or more embodiments, the first compound may be represented by one selected from Formulae 1A-1(1), 1A-2(1), 1A-2(2), 1A-3(1), 1A-4(1), 1A-4(2), 1A-5(1), 1A-5(2), 1A-5(3), 1A-6(1), 1A-7(1), 1A-8(1), 1A-8(2), 1A-8(3), 1A-8(4), 1A-9(1), 1A-9(2), 1A-10(1), 1A-10(2), 1A-10(3), 1A-10(4), 1B-1(1), 1B-2(1), 1B-2(2), 1B-3(1), and 1B-4(1): L1, L4, L7, L10, Ar1to Ar8, R1to R4, and R7in Formulae 1A-1(1), 1A-2(1), 1A-2(2), 1A-3(1), 1A-4(1), 1A-4(2), 1A-5(1), 1A-5(2), 1A-5(3), 1A-6(1), 1A-7(1), 1A-8(1), 1A-8(2), 1A-8(3), 1A-8(4), 1A-9(1), 1A-9(2), 1A-10(1), 1A-10(2), 1A-10(3), 1A-10(4), 1B-1(1), 1B-2(1), 1B-2(2), 1B-3(1), and 1B-4(1) are the same as described above. For example, L1, L4, L7, and L10may each independently be selected from groups represented by Formulae 4-1 to 4-36, Ar1to Ar8may each independently be selected from groups represented by Formulae 6-1 to 6-167, and R1to R4and R7may each independently be selected from groups represented by Formulae 8-1 to 8-161. In one or more embodiments, the second compound may be represented by one selected from Formulae 2A-1, 2B-1, and 2C-1: A21, A32, A42, m21, m32, m42, L21, L22, L31, L33, L41, L43, a21, a22, a31, a33, a41, a43, Ar21, Ar31, Ar41, b21, b31, b41, R21, R31, R32, R41, R42, c21, c31, c32, c41, and c42 in Formulae 2A-1, 2B-1, and 2C-1 are the same as described above. In one or more embodiments, the second compound may be represented by one selected from Formulae 2A-1(1) to 2A-1(8), 2B-1(1) to 2B-1(8), and 2C-1(1) to 2C-1(8): L21, L22, L31, L33, L41, L43, a21, a22, a31, a33, a41, a43, Ar21, Ar31, Ar41, b21, b31, b41, R21, R31, R32, R41, R42, c21, c31, c32, c41, and c42 in Formulae 2A-1(1) to 2A-1(8), 2B-1(1) to 2B-1(8), and 2C-1(1) to 2C-1(8) are the same as described above. For example, L21, L22, L31, L33, L41, and L43may each independently be selected from groups represented by Formulae 4-1 to 4-36, a21, a22, a31, a33, a41, and a43 may each independently be 0 or 1, Ar21, Ar31, and Ar41may each independently be selected from groups represented by Formulae 6-1 to 6-167, b21, b31, and b41 may each independently be 1 or 2, R21, R31, R32, R41, and R42may each independently be selected from groups represented by Formulae 8-1 to 8-161, and c21, c31, c32, c41, and c42 may each independently be 0 or 1. The first compound may be one selected from Compounds 1 to 51, and the second compound may be one selected from Compounds H1 to H24 and H105 to H184: In one or more embodiments, in the organic light-emitting device, the first electrode may be an anode, the second electrode may be a cathode, the organic layer may include an emission auxiliary layer between the first electrode and the emission layer, the first compound may be included in the emission auxiliary layer, and the second compound may be included in the emission layer. In one or more embodiments, in the organic light-emitting device, the first electrode may be an anode, the second electrode may be a cathode, and the organic layer may include i) a hole transport region between the first electrode and the emission auxiliary layer, the hole transport region including at least one of a hole injection layer, a hole transport layer, a buffer layer, and an electron blocking layer, and ii) an electron transport region between the emission layer and the second electrode, the electron transport region including at least one of a hole blocking layer, an electron transport layer, and an electron injection layer. In one or more embodiments, the emission auxiliary layer and the emission layer may directly contact each other. Since the organic light-emitting device includes the emission auxiliary layer disposed between the first electrode and the emission layer and including the first compound, and the emission layer including the second compound, energy may be effectively transferred from a host to a dopant in the emission layer, and a balance between the transfer of holes and electrons to the emission layer may be effectively achieved. Accordingly, it is possible to realize an organic light-emitting device having a low driving voltage, high efficiency, and a long lifespan. FIG.1is a schematic view of an organic light-emitting device10according to an embodiment. The organic light-emitting device10may include a first electrode110, a hole transport layer130, an emission auxiliary layer140, an emission layer150, an electron transport layer170, and a second electrode190, which are sequentially stacked in this stated order. FIGS.2to4are other schematic views of an organic light-emitting device10according to an embodiment. The organic light-emitting device10may include a substrate100comprising at least a first sub-pixel region, and a second sub-pixel region, a first sub-pixel electrode111disposed in the first sub-pixel region of the substrate, a first sub-pixel organic layer121disposed on the first sub-pixel electrode, a second sub-pixel electrode112disposed in the second sub-pixel region of the substrate, a second sub-pixel organic layer122disposed on the second sub-pixel electrode, and a second electrode190disposed on the first sub-pixel organic layer and the second sub-pixel organic layer, the first sub-pixel organic layer121may comprise a first compound represented by one selected from Formulae 1A and 1B, and the second sub-pixel organic layer122may comprise a second compound represented by one selected from Formulae 2A to 2C. In one or more embodiments, in Formulae 1A, 1B, 2A to 2C, and 10, A21, A31, A32, A41, and A42may each independently be a group represented by Formula 10, m21, m31, m32, m41, and m42 may each independently be an integer from 1 to 3, X1may be O or S, X2may be selected from a single bond, O, and S, ring B1and ring B2may each independently be selected from benzene and naphthalene, L1to L12, L21, L22, L31to L33, and L41to L43may each independently be selected from a substituted or unsubstituted C3-C10cycloalkylene group, a substituted or unsubstituted C1-C10heterocycloalkylene group, a substituted or unsubstituted C3-C10cycloalkenylene group, a substituted or unsubstituted C1-C10heterocycloalkenylene group, a substituted or unsubstituted C6-C60arylene group, a substituted or unsubstituted C1-C60heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group, a1 to a12, a21, a22, a31 to a33, and a41 to a43 may each independently be an integer from 0 to 3, Ar1to Ar8, Ar21, Ar31, and Ar41may each independently be selected from a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, except: 1) if L8and L9in Formula 1B are phenylene, Ar5and Ar6in Formula 1B may each independently be selected from a substituted or unsubstituted phenyl group, a substituted or unsubstituted biphenyl group, a substituted or unsubstituted terphenyl group, a substituted or unsubstituted pentalenyl group, a substituted or unsubstituted indenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted azulenyl group, a substituted or unsubstituted heptalenyl group, a substituted or unsubstituted indacenyl group, a substituted or unsubstituted acenaphthyl group, a substituted or unsubstituted fluorenyl group, a substituted or unsubstituted spiro-fluorenyl group, a substituted or unsubstituted benzofluorenyl group, a substituted or unsubstituted dibenzofluorenyl group, a substituted or unsubstituted phenalenyl group, a substituted or unsubstituted phenanthrenyl group, a substituted or unsubstituted anthracenyl group, a substituted or unsubstituted fluoranthenyl group, a substituted or unsubstituted triphenylenyl group, a substituted or unsubstituted pyrenyl group, a substituted or unsubstituted chrysenyl group, a substituted or unsubstituted naphthacenyl group, a substituted or unsubstituted picenyl group, a substituted or unsubstituted perylenyl group, a substituted or unsubstituted pentaphenyl group, a substituted or unsubstituted hexacenyl group, a substituted or unsubstituted pentacenyl group, a substituted or unsubstituted rubicenyl group, a substituted or unsubstituted coronenyl group, a substituted or unsubstituted ovalenyl group, a substituted or unsubstituted pyrrolyl group, a substituted or unsubstituted thiophenyl group, a substituted or unsubstituted furanyl group, a substituted or unsubstituted imidazolyl group, a substituted or unsubstituted pyrazolyl group, a substituted or unsubstituted thiazolyl group, a substituted or unsubstituted isothiazolyl group, a substituted or unsubstituted oxazolyl group, a substituted or unsubstituted isoxazolyl group, a substituted or unsubstituted pyridinyl group, a substituted or unsubstituted pyrazinyl group, a substituted or unsubstituted pyrimidinyl group, a substituted or unsubstituted pyridazinyl group, a substituted or unsubstituted isoindolyl group, a substituted or unsubstituted indolyl group, a substituted or unsubstituted indazolyl group, a substituted or unsubstituted purinyl group, a substituted or unsubstituted quinolinyl group, a substituted or unsubstituted isoquinolinyl group, a substituted or unsubstituted benzoquinolinyl group, a substituted or unsubstituted phthalazinyl group, a substituted or unsubstituted naphthyridinyl group, a substituted or unsubstituted quinoxalinyl group, a substituted or unsubstituted quinazolinyl group, a substituted or unsubstituted cinnolinyl group, a substituted or unsubstituted carbazolyl group, a substituted or unsubstituted phenanthridinyl group, a substituted or unsubstituted acridinyl group, a substituted or unsubstituted phenanthrolinyl group, a substituted or unsubstituted phenazinyl group, a substituted or unsubstituted benzimidazolyl group, a substituted or unsubstituted benzofuranyl group, a substituted or unsubstituted benzothiophenyl group, a substituted or unsubstituted isobenzothiazolyl group, a substituted or unsubstituted benzoxazolyl group, a substituted or unsubstituted isobenzoxazolyl group, a substituted or unsubstituted triazolyl group, a substituted or unsubstituted tetrazolyl group, a substituted or unsubstituted oxadiazolyl group, a substituted or unsubstituted triazinyl group, a substituted or unsubstituted benzocarbazolyl group, a substituted or unsubstituted dibenzocarbazolyl group, a substituted or unsubstituted thiadiazolyl group, a substituted or unsubstituted imidazopyridinyl group, a substituted or unsubstituted imidazopyrimidinyl group, a substituted or unsubstituted benzoxanthenyl group, a substituted or unsubstituted dibenzodioxinyl group, and —Si(Q1)(Q2)(Q3), and 2) if L11and L12in Formula 1B are phenylene, Ar7and Ar8in Formula 1B may each independently be selected from a substituted or unsubstituted phenyl group, a substituted or unsubstituted biphenyl group, a substituted or unsubstituted terphenyl group, a substituted or unsubstituted pentalenyl group, a substituted or unsubstituted indenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted azulenyl group, a substituted or unsubstituted heptalenyl group, a substituted or unsubstituted indacenyl group, a substituted or unsubstituted acenaphthyl group, a substituted or unsubstituted fluorenyl group, a substituted or unsubstituted spiro-fluorenyl group, a substituted or unsubstituted benzofluorenyl group, a substituted or unsubstituted dibenzofluorenyl group, a substituted or unsubstituted phenalenyl group, a substituted or unsubstituted phenanthrenyl group, a substituted or unsubstituted anthracenyl group, a substituted or unsubstituted fluoranthenyl group, a substituted or unsubstituted triphenylenyl group, a substituted or unsubstituted pyrenyl group, a substituted or unsubstituted chrysenyl group, a substituted or unsubstituted naphthacenyl group, a substituted or unsubstituted picenyl group, a substituted or unsubstituted perylenyl group, a substituted or unsubstituted pentaphenyl group, a substituted or unsubstituted hexacenyl group, a substituted or unsubstituted pentacenyl group, a substituted or unsubstituted rubicenyl group, a substituted or unsubstituted coronenyl group, a substituted or unsubstituted ovalenyl group, a substituted or unsubstituted pyrrolyl group, a substituted or unsubstituted thiophenyl group, a substituted or unsubstituted furanyl group, a substituted or unsubstituted imidazolyl group, a substituted or unsubstituted pyrazolyl group, a substituted or unsubstituted thiazolyl group, a substituted or unsubstituted isothiazolyl group, a substituted or unsubstituted oxazolyl group, a substituted or unsubstituted isoxazolyl group, a substituted or unsubstituted pyridinyl group, a substituted or unsubstituted pyrazinyl group, a substituted or unsubstituted pyrimidinyl group, a substituted or unsubstituted pyridazinyl group, a substituted or unsubstituted isoindolyl group, a substituted or unsubstituted indolyl group, a substituted or unsubstituted indazolyl group, a substituted or unsubstituted purinyl group, a substituted or unsubstituted quinolinyl group, a substituted or unsubstituted isoquinolinyl group, a substituted or unsubstituted benzoquinolinyl group, a substituted or unsubstituted phthalazinyl group, a substituted or unsubstituted naphthyridinyl group, a substituted or unsubstituted quinoxalinyl group, a substituted or unsubstituted quinazolinyl group, a substituted or unsubstituted cinnolinyl group, a substituted or unsubstituted carbazolyl group, a substituted or unsubstituted phenanthridinyl group, a substituted or unsubstituted acridinyl group, a substituted or unsubstituted phenanthrolinyl group, a substituted or unsubstituted phenazinyl group, a substituted or unsubstituted benzimidazolyl group, a substituted or unsubstituted benzofuranyl group, a substituted or unsubstituted benzothiophenyl group, a substituted or unsubstituted isobenzothiazolyl group, a substituted or unsubstituted benzoxazolyl group, a substituted or unsubstituted isobenzoxazolyl group, a substituted or unsubstituted triazolyl group, a substituted or unsubstituted tetrazolyl group, a substituted or unsubstituted oxadiazolyl group, a substituted or unsubstituted triazinyl group, a substituted or unsubstituted benzocarbazolyl group, a substituted or unsubstituted dibenzocarbazolyl group, a substituted or unsubstituted thiadiazolyl group, a substituted or unsubstituted imidazopyridinyl group, a substituted or unsubstituted imidazopyrimidinyl group, a substituted or unsubstituted benzoxanthenyl group, a substituted or unsubstituted dibenzodioxinyl group, and —Si(Q1)(Q2)(Q3), b1 to b8, b21, b31, and b41 may each independently be an integer from 1 to 5, Ar1and Ar2are optionally linked to form a saturated or unsaturated ring, Ar3and Ar4are optionally linked to form a saturated or unsaturated ring, Ar5and Ar6are optionally linked to form a saturated or unsaturated ring, and Ar7and Ar8are optionally linked to form a saturated or unsaturated ring, R1to R8, R21, R31, R32, R41, R42, R51, and R52may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a substituted or unsubstituted C1-C60alkyl group, a substituted or unsubstituted C2-C60alkenyl group, a substituted or unsubstituted C2-C60alkynyl group, a substituted or unsubstituted C1-C60alkoxy group, a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, and —Si(Q1)(Q2)(Q3), c1 to c4, c7, and c8 may each independently be an integer from 0 to 4, c5 and c6 are each independently an integer from 0 to 5, c21 is an integer from 0 to 8, c31 and c32 are each independently an integer from 0 to 5, c41 and c42 are each independently an integer from 0 to 4, and c51 and c52 are each independently an integer from 0 to 6, n1 to n4, n7, and n8 may each independently be an integer from 0 to 4, and n5 and n6 are each independently an integer from 0 to 5, provided that the sum of n1, n2, n3, and n4 is one or more and the sum of n5, n6, n7, and n8 is one or more, n21 is an integer from 1 to 3, and n31 and n32 are each independently an integer from 0 to 3, provided that n31+n32 is one or more, and n41 and n42 are each independently an integer from 0 to 3, provided that n41+n42 is one or more, and at least one substituent selected from a substituent(s) of the substituted C3-C10cycloalkylene group, the substituted C1-C10heterocycloalkylene group, the substituted C3-C10cycloalkenylene group, the substituted C1-C10heterocycloalkenylene group, the substituted C6-C60arylene group, the substituted C1-C60heteroarylene group, the substituted divalent non-aromatic condensed polycyclic group, the substituted divalent non-aromatic condensed heteropolycyclic group, the substituted C1-C60alkyl group, the substituted C2-C60alkenyl group, the substituted C2-C60alkynyl group, the substituted C1-C60alkoxy group, the substituted C3-C10cycloalkyl group, the substituted C1-C10heterocycloalkyl group, the substituted C3-C10cycloalkenyl group, the substituted C1-C10heterocycloalkenyl group, the substituted C6-C60aryl group, the substituted C6-C60aryloxy group, the substituted C6-C60arylthio group, the substituted C1-C60heteroaryl group, the substituted monovalent non-aromatic condensed polycyclic group, and the substituted monovalent non-aromatic condensed heteropolycyclic group may be selected from: a deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid or a salt thereof, a sulfonic acid or a salt thereof, a phosphoric acid or a salt thereof, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, and a C1-C60alkoxy group; a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, and a C1-C60alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —Si(Q11)(Q12)(Q13), and —N(Q14)(Q15); C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group; a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group, each substituted with a least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —Si(Q21)(Q22)(Q23), and —N(Q24)(Q25); and —Si(Q31)(Q32)(Q33) and —N(Q34)(Q35), wherein Q1to Q3, Q11to Q15, Q21to Q25, and Q31to Q35are each independently selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group, and * indicates a binding site to a neighboring atom. In one or more embodiments, the first sub-pixel electrode111and the second sub-pixel electrode112may each be an anode, and the second electrode190may be a cathode. In one or more embodiments, the first sub-pixel organic layer121may comprise a first sub-pixel emission layer151, and a first sub-pixel emission auxiliary layer141between the first sub-pixel electrode111and the first sub-pixel emission layer151, and the second sub-pixel organic layer122may comprise a second sub-pixel emission layer152, and a second sub-pixel emission auxiliary layer142between the second sub-pixel electrode112and the second sub-pixel emission layer152, wherein the first sub-pixel emission auxiliary layer141may comprise the first compound, and the second sub-pixel emission layer152may comprise the second compound. In one or more embodiments, the first sub-pixel emission layer151may emit first color light, and the second sub-pixel emission layer152may emit second color light, wherein, (i) the first color light may be red, and the second color light may be green, (ii) the first color light may be green, and the second color light may be red, (iii) the first color light may be red, and the second color light may be blue, (iv) the first color light may be blue, and the second color light may be red, (v) the first color light may be green, and the second color light may be blue, or (vi) the first color light may be blue, and the second color light may be green. In one or more embodiments, the substrate100may further comprise a third sub-pixel region, and the organic light-emitting device10may further comprise a third sub-pixel electrode113disposed on the third sub-pixel region, a third sub-pixel organic layer123disposed on the third sub-pixel electrode113and comprising a third sub-pixel emission layer153and a third sub-pixel emission auxiliary layer143. In one or more embodiments, the third sub-pixel emission layer153may emit third color light, wherein, the third color light may be red, green or blue. InFIG.1, a substrate may be additionally disposed under the first electrode110or above the second electrode190. The substrate may be a glass substrate or a transparent plastic substrate, each having excellent mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and water resistance. The first electrode110may be formed by depositing or sputtering a material for forming the first electrode110on the substrate. When the first electrode110is an anode, the material for forming the first electrode110may be selected from materials with a high work function to facilitate hole injection. The first electrode110may be a reflective electrode, a semi-transmissive electrode, or a transmissive electrode. The material for forming the first electrode may be a transparent and highly conductive material, and examples of such a material are indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), and zinc oxide (ZnO). When the first electrode110is a semi-transmissive electrode or a reflective electrode, at least one selected from magnesium (Mg), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), and magnesium-silver (Mg—Ag) may be used as a material for forming the first electrode110. InFIGS.2to4, the first sub-pixel electrode111, the second sub-pixel electrode112, and the third sub-pixel electrode113may be understood by referring to the descriptions provided in connection with the first electrode. The first electrode110may have a single-layered structure, or a multi-layered structure including two or more layers. For example, the first electrode110may have a three-layered structure of ITO/Ag/ITO, but the structure of the first electrode110is not limited thereto. Holes provided by the first electrode110may arrive at the emission layer150through the hole transport region130. The hole transport region130may have a single-layered structure formed of a single material, a single-layered structure formed of a plurality of different materials, or a multi-layered structure having a plurality of layers formed of a plurality of different materials. For example, the hole transport region130may include a hole injection layer or a hole transport layer, or may have a hole injection layer/hole transport layer structure, a hole injection layer/hole transport layer/buffer layer structure, a hole injection layer/buffer layer structure, or a hole transport layer/buffer layer structure, wherein, in each structure, constituting layers are sequentially stacked on the first electrode110in this stated order. When the hole transport region includes a hole injection layer, the hole injection layer may be formed on the first electrode110by using one or more suitable methods selected from vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, inkjet printing, laser printing, and laser-induced thermal imaging. When a hole injection layer is formed by vacuum deposition, for example, the vacuum deposition may be performed at a deposition temperature of about 100° C. to about 500° C., at a vacuum degree of about 10−8torr to about 10−3torr, and at a deposition rate of about 0.01 Å/sec to about 100 Å/sec by taking into account the compound for the hole injection layer to be deposited and the structure of the hole injection layer to be formed. When a hole injection layer is formed by spin coating, the spin coating may be performed at a coating rate of about 2,000 rpm to about 5,000 rpm and at a temperature of about 80° C. to 200° C. by taking into account the compound for the hole injection layer to be deposited and the structure of the hole injection layer to be formed. When the hole transport region includes a hole transport layer, the hole transport layer may be formed on the first electrode110or the hole injection layer by using one or more suitable methods selected from vacuum deposition, spin coating, casting, an LB method, inkjet printing, laser printing, and laser-induced thermal imaging. When the hole transport layer is formed by vacuum deposition or spin coating, deposition and coating conditions for the hole transport layer may be determined by referring to the deposition and coating conditions for the hole injection layer. The hole transport region may include at least one selected from m-MTDATA, TDATA, 2-TNATA, NPB, β-NPB, TPD, Spiro-TPD, Spiro-NPB, methylated-NPB, TAPC, HMTPD, 4,4′,4″-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline/dodecylbenzenesulfonic acid (PANI/DBSA), poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT/PSS), polyaniline/camphor sulfonicacid (PANI/CSA), polyaniline/poly(4-styrenesulfonate) (PANI/PSS), a compound represented by Formula 201 below, and a compound represented by Formula 202 below: In Formulae 201 and 202, X201may be selected from N, B, and P, L201to L205may be the same as explained in connection with L1; xa1 to xa4 may each independently be selected from 0, 1, 2, and 3; xa5 may be selected from 1, 2, 3, 4, and 5; and R201to R204may each independently be selected from a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group. In one or more embodiments, in Formulae 201 and 202, L201to L205may each independently be selected from: a phenylene group, a naphthylene group, a fluorenylene group, a spiro-fluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenanthrenylene group, an anthracenylene group, a pyrenylene group, a chrysenylene group, a pyridinylene group, a pyrazinylene group, a pyrimidinylene group, a pyridazinylene group, a quinolinylene group, an isoquinolinylene group, a quinoxalinylene group, a quinazolinylene group, a carbazolylene group, and a triazinylene group; and a phenylene group, a naphthylene group, a fluorenylene group, a spiro-fluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenanthrenylene group, an anthracenylene group, a pyrenylene group, a chrysenylene group, a pyridinylene group, a pyrazinylene group, a pyrimidinylene group, a pyridazinylene group, a quinolinylene group, an isoquinolinylene group, a quinoxalinylene group, a quinazolinylene group, a carbazolylene group, and a triazinylene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a pyrenyl group, a chrysenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, an isoindolyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, and a triazinyl group; xa1 to xa4 may each independently be 0, 1, or 2; xa5 may be 1, 2, or 3; R201to R204may each independently be selected from: a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a pyrenyl group, a chrysenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, and a triazinyl group; and a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a pyrenyl group, a chrysenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, and a triazinyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, an azulenyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a pyrenyl group, a chrysenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, and a triazinyl group, but they are not limited thereto. The compound represented by Formula 201 may be represented by Formula 201A: In one or more embodiments, the compound represented by Formula 201 may be represented by Formula 201A-1 below, but is not limited thereto: For example, the compound represented by Formula 202 may be represented by Formula 202A below, but is not limited thereto: Regarding Formulae 201A, 201A-1, and 202A, X201, L201to L203, xa1 to xa3, xa5, and R202to R204are the same as described above, R211and R212are the same as described in connection with R203, and R213to R216may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group. The compound represented by Formula 201 and the compound represented by Formula 202 may each include compounds HT1 to HT20 illustrated below, but are not limited thereto. A thickness of the hole transport region may be in a range of about 100 Å to about 10,000 Å, for example, about 100 Å to about 1,000 Å. When the hole transport region includes a hole injection layer and a hole transport layer, the thickness of the hole injection layer may be in a range of about 100 Å to less than about 10,000 Å, and for example, about 100 Å to about 1,000 Å, and the thickness of the hole transport layer may be in a range of about 50 Å to about 2,000 Å, and for example, about 100 Å to about 1,500 Å. When the thicknesses of the hole transport region, the hole injection layer, and the hole transport layer are within these ranges, satisfactory hole transporting characteristics may be obtained without a substantial increase in driving voltage. The hole transport region may further include, in addition to these materials, a charge-generation material for the improvement of conductive properties. The charge-generation material may be homogeneously or non-homogeneously dispersed in the hole transport region. The charge-generation material may be, for example, a p-dopant. The p-dopant may be one selected from a quinone derivative, a metal oxide, and a cyano group-containing compound, but embodiments are not limited thereto. For example, non-limiting examples of the p-dopant are a quinone derivative, such as tetracyanoquinonedimethane (TCNQ) or 2,3,5,6-tetrafluoro-tetracyano-1,4-benzoquinonedimethane (F4-TCNQ); a metal oxide, such as a tungsten oxide or a molybdenum oxide, and Compound HT-D1 illustrated below, but are not limited thereto. The hole transport region130may further include, in addition to the hole injection layer and the hole transport layer, at least one selected from a buffer layer and an electron blocking layer. Since the buffer layer may compensate for an optical resonance distance according to a wavelength of light emitted from the emission layer, light emission efficiency of a formed organic light-emitting device may be improved. For use as a material included in the buffer layer, materials that are to be included in the hole transport region may be used. The electron blocking layer prevents injection of electrons from the electron transport region. The emission auxiliary layer140may be formed on the hole transport region130by using one or more suitable methods selected from vacuum deposition, spin coating, casting, an LB method, inkjet printing, laser printing, and laser-induced thermal imaging. When the emission auxiliary layer140is formed by vacuum deposition or spin coating, deposition and coating conditions for the emission auxiliary layer140may be determined by referring to the deposition and coating conditions for the hole injection layer. The emission auxiliary layer140may include the first compound described herein. A thickness of the emission auxiliary layer140may be in a range of about 10 Å to about 1,000 Å, for example, about 50 Å to about 700 Å. When the thickness of the emission auxiliary layer140is within this range, the efficiency and lifespan of the organic light-emitting device10may be increased without a substantial increase in driving voltage. InFIGS.2to4, the first sub-pixel emission auxiliary layer141, the second sub-pixel emission auxiliary layer142, and the third sub-pixel emission auxiliary layer143may be understood by referring to the descriptions provided in connection with the emission auxiliary layer140. The emission layer150may be formed on the emission auxiliary layer140by using one or more suitable methods selected from vacuum deposition, spin coating, casting, an LB method, inkjet printing, laser printing, and laser-induced thermal imaging. When the emission layer150is formed by vacuum deposition or spin coating, deposition and coating conditions for the emission layer150may be determined by referring to the deposition and coating conditions for the hole injection layer. The emission layer150illustrated inFIG.1may further include a dopant, and the second compound included in the emission layer150may function as a host. The second compound included in the emission layer150illustrated inFIG.1may be understood as described above. InFIGS.2to4, the first sub-pixel emission layer151, the second sub-pixel emission layer152, and the third sub-pixel emission layer153may be understood by referring to the descriptions provided in connection with the emission layer150. When the organic light-emitting device10is a full-color organic light-emitting device, the emission layer may be patterned into a red emission layer, a green emission layer, or a blue emission layer, according to a sub-pixel. In one or more embodiments, the emission layer150may have a stacked structure including a red emission layer, a green emission layer, and a blue emission layer, or may include a red light-emitting material, a green light-emitting material, and a blue light-emitting material, which are mixed with each other in a single layer, to emit white light. The emission layer150may further include, in addition to the first compound and the second compound, each functioning as the host, a phosphorescent dopant or a fluorescent dopant. The phosphorescent dopant may include an organometallic complex represented by Formula 401 below: In Formula 401, M may be selected from iridium (Ir), platinum (Pt), osmium (Os), titanium (Ti), zirconium (Zr), hafnium (Hf), europium (Eu), terbium (Tb), and thulium (Tm); X401to X404may each independently be nitrogen or carbon; rings A401and A402may each independently be selected from a substituted or unsubstituted benzene, a substituted or unsubstituted naphthalene, a substituted or unsubstituted fluorene, a substituted or unsubstituted spiro-fluorene, a substituted or unsubstituted indene, a substituted or unsubstituted pyrrole, a substituted or unsubstituted thiophene, a substituted or unsubstituted furan, a substituted or unsubstituted imidazole, a substituted or unsubstituted pyrazole, a substituted or unsubstituted thiazole, a substituted or unsubstituted isothiazole, a substituted or unsubstituted oxazole, a substituted or unsubstituted isoxazole, a substituted or unsubstituted pyridine, a substituted or unsubstituted pyrazine, a substituted or unsubstituted pyrimidine, a substituted or unsubstituted pyridazine, a substituted or unsubstituted quinoline, a substituted or unsubstituted isoquinoline, a substituted or unsubstituted benzoquinoline, a substituted or unsubstituted quinoxaline, a substituted or unsubstituted quinazoline, a substituted or unsubstituted carbazole, a substituted or unsubstituted benzimidazole, a substituted or unsubstituted benzofuran, a substituted or unsubstituted benzothiophene, a substituted or unsubstituted isobenzothiophene, a substituted or unsubstituted benzoxazole, a substituted or unsubstituted isobenzoxazole, a substituted or unsubstituted triazole, a substituted or unsubstituted oxadiazole, a substituted or unsubstituted triazine, a substituted or unsubstituted dibenzofuran, and a substituted or unsubstituted dibenzothiophene; and at least one substituent of the substituted benzene, the substituted naphthalene, the substituted fluorene, the substituted spiro-fluorene, the substituted indene, the substituted pyrrole, the substituted thiophene, the substituted furan, substituted imidazole, the substituted pyrazole, the substituted thiazole, the substituted isothiazole, the substituted oxazole, the substituted isoxazole, the substituted pyridine, the substituted pyrazine, the substituted pyrimidine, the substituted pyridazine, the substituted quinoline, the substituted isoquinoline, the substituted benzoquinoline, the substituted quinoxaline, the substituted quinazoline, the substituted carbazole, the substituted benzimidazole, the substituted benzofuran, substituted benzothiophene, the substituted isobenzothiophene, the substituted benzoxazole, the substituted isobenzoxazole, the substituted triazole, the substituted oxadiazole, the substituted triazine, substituted dibenzofuran, and the substituted dibenzothiophene may be selected from: deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, and a C1-C60alkoxy group; a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, and a C1-C60alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —N(Q401)(Q402), —Si(Q403)(Q404)(Q405), and —B(Q406)(Q407); a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group; a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —N(Q411)(Q412), —Si(Q413)(Q414)(Q415), and —B(Q416)(Q417); and —N(Q421)(Q422), —Si(Q423)(Q424)(Q425), and —B(Q426)(Q427), L401is an organic ligand; xc1 is 1, 2, or 3; and xc2 is 0, 1, 2, or 3. L401may be a monovalent, divalent, or trivalent organic ligand. For example, L401may be selected from a halogen ligand (for example, Cl or F), a diketone ligand (for example, acetylacetonate, 1,3-diphenyl-1,3-propandionate, 2,2,6,6-tetramethyl-3,5-heptandionate, or hexafluoroacetonate), a carboxylic acid ligand (for example, picolinate, dimethyl-3-pyrazolecarboxylate, or benzoate), a carbon monooxide ligand, an isonitrile ligand, a cyano ligand, and a phosphorous ligand (for example, phosphine or phosphite), but is not limited thereto. Q401to Q407, Q411to Q417, and Q421to Q427may each independently be selected from hydrogen, a C1-C60alkyl group, a C2-C60alkenyl group, a C6-C60aryl group, and a C2-C60heteroaryl group. When A401in Formula 401 has two or more substituents, the substituents of A401may be linked to each other to form a saturated or unsaturated ring. When A402in Formula 401 has two or more substituents, the substituents of A402may be linked to each other to form a saturated or unsaturated ring. When xc1 in Formula 401 is two or more, a plurality of ligands in Formula 401 may be identical to or different from each other. When xc1 in Formula 401 is two or more, A401and A402may be respectively directly connected to A401and A402of other neighboring ligands with or without a linker (for example, a C1-C5alkylene, or —N(R′)— (wherein R′ may be a C1-C10alkyl group or a C6-C20aryl group) or —C(═O)—) therebetween. The phosphorescent dopant may be, for example, selected from Compounds PD1 to PD75, but is not limited thereto: The fluorescent dopant may include a compound represented by Formula 501 below. In Formula 501, Ar501may be selected from: a naphthalene group, a heptalene group, a fluorene group, a spiro-fluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, and an indenoanthracene group; and a naphthalene group, a heptalene group, a fluorene group, a spiro-fluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, and an indenoanthracene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, and —Si(Q501)(Q502)(Q503) (wherein Q501to Q503are each independently selected from hydrogen, a C1-C60alkyl group, a C2-C60alkenyl group, a C6-C60aryl group, and a C1-C60heteroaryl group), L501to L503may be understood by referring to the descriptions of L1; R501and R502may each independently be selected from: a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a pyrenyl group, a chrysenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazole group, a triazinyl group, a dibenzofuranyl group, and a dibenzothiophenyl group; and a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a pyrenyl group, a chrysenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, a triazinyl group, a dibenzofuranyl group, and a dibenzothiophenyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a pyrenyl group, a chrysenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, a triazinyl group, a dibenzofuranyl group, and a dibenzothiophenyl group; xd1 to xd3 may each independently be selected from 0, 1, 2, and 3; and xd4 may be selected from 1, 2, 3, and 4. The fluorescent dopant may include at least one of Compounds FD1 to FD9: In one or more embodiments, the fluorescent dopant may be selected from the following compounds, but embodiments of the present disclosure are not limited thereto. An amount of the dopant in the emission layer150may be, in general, in a range of about 0.01 parts to about 15 parts by weight based on 100 parts by weight of the host, but is not limited thereto. A thickness of the emission layer150may be in a range of about 100 Å to about 1,000 Å, for example, about 200 Å to about 600 Å. When the thickness of the emission layer150is within this range, excellent light emission characteristics may be obtained without a substantial increase in driving voltage. Then, the electron transport region170may be disposed on the emission layer150. The electron transport region170may include at least one selected from a hole blocking layer, an electron transport layer, and an electron injection layer, but is not limited thereto. For example, the electron transport region170may have an electron transport layer/electron injection layer structure or a hole blocking layer/electron transport layer/electron injection layer structure, wherein layers of each structure are sequentially stacked in the stated order in a direction away from the emission layer, but the structure thereof is not limited thereto. When the electron transport region includes a hole blocking layer, the hole blocking layer may be formed on the emission layer by using one or more suitable methods selected from vacuum deposition, spin coating, casting, an LB method, inkjet printing, laser printing, and laser-induced thermal imaging. When the hole blocking layer is formed by vacuum deposition or spin coating, deposition and coating conditions for the hole blocking layer may be determined by referring to the deposition and coating conditions for the hole injection layer. The hole blocking layer may include, for example, at least one of BCP and Bphen, but is not limited thereto. A thickness of the hole blocking layer may be in a range of about 20 Å to about 1,000 Å, for example, about 30 Å to about 300 Å. When the thickness of the hole blocking layer is within these ranges, the hole blocking layer may have improved hole blocking ability without a substantial increase in driving voltage. The electron transport region may include an electron transport layer. The electron transport layer may be formed on the emission layer or the hole blocking layer by using one or more suitable methods selected from vacuum deposition, spin coating, casting, an LB method, inkjet printing, laser printing, and laser-induced thermal imaging. When an electron transport layer is formed by vacuum deposition or spin coating, deposition and coating conditions for the electron transport layer may be determined by referring to the deposition and coating conditions for the hole injection layer. In one or more embodiments, the electron transport layer may include at least one compound selected from a compound represented by Formula 601 and a compound represented by Formula 602 illustrated below: Ar601-[(L601)xe1-E601]xe2. <Formula 601> In Formula 601, Ar601may be selected from: a naphthalene group, a heptalene group, a fluorene group, a spiro-fluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, and an indenoanthracene group; and a naphthalene, a heptalene, a fluorene, a spiro-fluorene, a benzofluorene, a dibenzofluorene, a phenalene, a phenanthrene, an anthracene, a fluoranthene, a triphenylene, a pyrene, a chrysene, naphthacene, a picene, a perylene, a pentaphene, and an indenoanthracene, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group and —Si(Q301)(Q302)(Q303) (wherein Q301to Q303may each independently be a C1-C60alkyl group, a C2-C60alkenyl group, a C6-C60aryl group, or a C1-C60heteroaryl group); L601may be the same as explained in connection with L201; E601may be selected from: a pyrrolyl group, a thiophenyl group, a furanyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, an isoindolyl group, an indolyl group, an indazolyl group, a purinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a carbazolyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, a triazolyl group, a tetrazolyl group, an oxadiazolyl group, a triazinyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, an imidazopyridinyl group, and an imidazopyrimidinyl group; and a pyrrolyl group, a thiophenyl group, a furanyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, an isoindolyl group, an indolyl group, an indazolyl group, a purinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a carbazolyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, a triazolyl group, a tetrazolyl group, an oxadiazolyl group, a triazinyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, an imidazopyridinyl group, and an imidazopyrimidinyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, an isoindolyl group, an indolyl group, an indazolyl group, a purinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a carbazolyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, a triazolyl group, a tetrazolyl group, an oxadiazolyl group, a triazinyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, an imidazopyridinyl group, and an imidazopyrimidinyl group; xe1 may be selected from 0, 1, 2, and 3; and xe2 may be selected from 1, 2, 3, and 4. In Formula 602, X611may be N or C-(L611)xe611-R611, X612may be N or C-(L612)xe612-R612, X613may be N or C-(L613)xe613-R613, and at least one of X611to X613may be N; L611to L616may be the same as explained in connection with L1; R611to R616may each independently be selected from: a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a pyrenyl group, a chrysenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, and a triazinyl group; and a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a pyrenyl group, a chrysenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, and a triazinyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, an azulenyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a pyrenyl group, a chrysenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, and a triazinyl group; xe611 to xe616 may each independently be selected from 0, 1, 2, and 3. The compound represented by Formula 601 and the compound represented by Formula 602 may each independently be selected from Compounds ET1 to ET15 illustrated below: In one or more embodiments, the electron transport layer may further include at least one selected from BCP, Bphen, Alq3, BAlq, TAZ, and NTAZ. A thickness of the electron transport layer may be in a range of about 100 Å to about 1,000 Å, for example, about 150 Å to about 500 Å. When the thickness of the electron transport layer is within these ranges, satisfactory electron transport characteristics may be obtained without a substantial increase in the driving voltage. Also, the electron transport layer may further include, in addition to the materials described above, a metal-containing material. The metal-containing material may include a Li complex. The Li complex may include, for example, Compound ET-D1 (8-hydroxyquinolinolato-lithium, LiQ) or ET-D2. The electron transport region may include an electron injection layer that facilitates injection of electrons from the second electrode190. The electron injection layer may be formed on the electron transport layer by using one or more suitable methods selected from vacuum deposition, spin coating, casting, an LB method, inkjet printing, laser printing, and laser-induced thermal imaging. When an electron injection layer is formed by vacuum deposition or spin coating, deposition and coating conditions for the electron injection layer may be determined by referring to the deposition and coating conditions for the hole injection layer. The electron injection layer may include at least one selected from LiF, NaCl, CsF, Li2O, BaO, and LiQ. A thickness of the electron injection layer may be in a range of about 1 Å to about 100 Å, for example, about 3 Å to about 90 Å. When the thickness of the electron injection layer is within the range described above, the electron injection layer may have satisfactory electron injection characteristics without a substantial increase in driving voltage. The second electrode190may be disposed on the electron transport layer170having such a structure. The second electrode190may be a cathode that is an electron injection electrode, and in this regard, a material for forming the second electrode190may be a material having a low work function, and such a material may be a metal, an alloy, an electrically conductive compound, or a mixture thereof. Examples of the second electrode190are lithium (Li), magnesium (Mg), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), and magnesium-silver (Mg—Ag). In one or more embodiments, the material for forming the second electrode190may be ITO or IZO. The second electrode190may be a semi-transmissive electrode or a transmissive electrode. Hereinbefore, the organic light-emitting device has been described with reference toFIGS.1to4, but is not limited thereto. The term “C1-C60alkyl group” as used herein refers to a linear or branched saturated aliphatic hydrocarbon monovalent group having 1 to 60 carbon atoms, and non-limiting examples thereof include a methyl group, an ethyl group, a propyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, a pentyl group, an iso-amyl group, and a hexyl group. The term “C1-C60alkylene group” as used herein refers to a divalent group having the same structure as the C1-C60alkyl group. The term “C1-C60alkoxy group” as used herein refers to a monovalent group represented by —OA101(wherein A101is the C1-C60alkyl group), and non-limiting examples thereof include a methoxy group, an ethoxy group, and an isopropyloxy group. The term “C2-C60alkenyl group” as used herein refers to a hydrocarbon group formed by substituting at least one carbon-carbon double bond in the middle or at the terminus of the C2-C60alkyl group, and non-limiting examples thereof include an ethenyl group, a propenyl group, and a butenyl group. The term “C2-C60alkenylene group” as used herein refers to a divalent group having the same structure as the C2-C60alkenyl group. The term “C2-C60alkynyl group” as used herein refers to a hydrocarbon group formed by substituting at least one carbon-carbon triple bond in the middle or at the terminus of the C2-C60alkyl group, and examples thereof include an ethynyl group, and a propynyl group. The term “C2-C60alkynylene group” as used herein refers to a divalent group having the same structure as the C2-C60alkynyl group. The term “C3-C10cycloalkyl group” as used herein refers to a monovalent saturated hydrocarbon monocyclic group having 3 to 10 carbon atoms, and examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, and a cycloheptyl group. The term “C3-C10cycloalkylene group” as used herein refers to a divalent group having the same structure as the C3-C10cycloalkyl group. The term “C1-C10heterocycloalkyl group” as used herein refers to a monovalent saturated monocyclic group having at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom and 1 to 10 carbon atoms, and examples thereof include a tetrahydrofuranyl group and a tetrahydrothiophenyl group. The term “C1-C10heterocycloalkylene group” as used herein refers to a divalent group having the same structure as the C1-C10heterocycloalkyl group. The term “C3-C10cycloalkenyl group” as used herein refers to a monovalent monocyclic group having 3 to 10 carbon atoms, at least one carbon-carbon double bond in the ring thereof, and no aromaticity, and examples thereof include a cyclopentenyl group, a cyclohexenyl group, and a cycloheptenyl group. The term “C3-C10cycloalkenylene group” as used herein refers to a divalent group having the same structure as the C3-C10cycloalkenyl group. The term “C1-C10heterocycloalkenyl group” as used herein refers to a monovalent monocyclic group that has at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom, 1 to 10 carbon atoms, and at least one carbon-carbon double bond in its ring. Non-limiting examples of the C1-C10heterocycloalkenyl group include a 2,3-dihydrofuranyl group and a 2,3-dihydrothiophenyl group. The term “C1-C10heterocycloalkenylene group” as used herein refers to a divalent group having the same structure as the C1-C10heterocycloalkenyl group. The term “C6-C60aryl group” as used herein refers to a monovalent group having a carbocyclic aromatic system having 6 to 60 carbon atoms, and a C6-C60arylene group used herein refers to a divalent group having a carbocyclic aromatic system having 6 to 60 carbon atoms. Non-limiting examples of the C6-C60aryl group include a phenyl group, a naphthyl group, an anthracenyl group, a phenanthrenyl group, a pyrenyl group, and a chrysenyl group. When the C6-C60aryl group and the C6-C60arylene group each include two or more rings, the rings may be fused to each other. The term “C1-C60heteroaryl group” as used herein refers to a monovalent group having a carbocyclic aromatic system that has at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom, and 1 to 60 carbon atoms. The term “C1-C60heteroarylene group” as used herein refers to a divalent group having a carbocyclic aromatic system that has at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom, and 1 to 60 carbon atoms. Non-limiting examples of the C1-C60heteroaryl group include a pyridinyl group, a pyrimidinyl group, a pyrazinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, and an isoquinolinyl group. When the C1-C60heteroaryl group and the C1-C60heteroarylene group each include two or more rings, the rings may be fused to each other. The term “C6-C60aryloxy group” as used herein refers to —OA102(wherein A102is the C6-C60aryl group), and a C6-C60arylthio group used herein indicates —SA103(wherein A103is the C6-C60aryl group). The term “monovalent non-aromatic condensed polycyclic group,” used herein, refers to a monovalent group (for example, having 8 to 60 carbon atoms) that has two or more rings condensed to each other, only carbon atoms as ring-forming atoms, and non-aromaticity in the entire molecular structure. Examples of the monovalent non-aromatic condensed polycyclic group include a fluorenyl group. The term “divalent non-aromatic condensed polycyclic group,” used herein, refers to a divalent group having the same structure as the monovalent non-aromatic condensed polycyclic group. The term “monovalent non-aromatic condensed heteropolycyclic group” as used herein refers to a monovalent group (for example, having 1 to 60 carbon atoms) that has two or more rings condensed to each other, has a heteroatom selected from N, O, Si, P, and S, other than carbon atoms, as a ring-forming atom, and has non-aromaticity in the entire molecular structure. Non-limiting examples of the monovalent non-aromatic condensed heteropolycyclic group include a carbazolyl group. The term “divalent non-aromatic condensed heteropolycyclic group,” used herein, refers to a divalent group having the same structure as the monovalent non-aromatic condensed heteropolycyclic group. At least one of substituents of the substituted condensed polycyclic group, the substituted C3-C10cycloalkylene group, the substituted C1-C10heterocycloalkylene group, the substituted C3-C10cycloalkenylene group, the substituted C1-C10heterocycloalkenylene group, the substituted C6-C60arylene group, the substituted C1-C60heteroarylene group, the substituted divalent non-aromatic condensed polycyclic group, the substituted divalent non-aromatic condensed heteropolycyclic group, the substituted C1-C60alkyl group, the substituted C2-C60alkenyl group, the substituted C2-C60alkynyl group, the substituted C1-C60alkoxy group, the substituted C3-C10cycloalkyl group, the substituted C1-C10heterocycloalkyl group, the substituted C3-C10cycloalkenyl group, the substituted C1-C10heterocycloalkenyl group, the substituted C6-C60aryl group, the substituted C6-C60aryloxy group, the substituted C6-C60arylthio group, the substituted C1-C60heteroaryl group, the substituted monovalent non-aromatic condensed polycyclic group, and the substituted monovalent non-aromatic condensed heteropolycyclic group may be selected from: deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, and a C1-C60alkoxy group; a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, and a C1-C60alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —N(Q11)(Q12), —Si(Q13)(Q14)(Q15), and —B(Q16)(Q17); a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group; a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —N(Q21)(Q22), —Si(Q23)(Q24)(Q25), and —B(Q26)(Q27); and —N(Q31)(Q32), —Si(Q33)(Q34)(Q35), and —B(Q36)(Q37), wherein Q1to Q7, Q11to Q17, Q21to Q27, and Q37to Q37may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group. The term “Ph”, as used herein, may refer to a phenyl group; the term “Me”, as used herein, may refer to a methyl group; the term “Et”, as used herein, may refer to an ethyl group; and the terms “ter-Bu” or “But”, as used herein, may refer to a tert-butyl group. According to one or more embodiments, an organic light-emitting device may have a low driving voltage, high efficiency, and a long lifespan. | 116,306 |
11944004 | MODES FOR CARRYING OUT THE INVENTION The organic EL element of the present invention has a basic structure in which at least an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode are provided in the stated order on a substrate. The layer structure of the organic EL element of the present invention can adopt various embodiments as long as the organic EL element has such a basic structure. For example, it is possible to provide an electron blocking layer between the hole transport layer and the light-emitting layer, provide a hole blocking layer between the light-emitting layer and the electron transport layer, and provide an electron injection layer between the electron transport layer and the cathode. In addition, it is possible to omit or double as some of the organic layers. For example, it is possible to adopt a configuration that doubles as the hole injection layer and the hole transport layer, and a configuration that doubles as the electron injection layer and the electron transport layer. Further, it is possible to adopt a configuration in which two or more organic layers having the same function are stacked, a configuration in which two hole transport layers are stacked, a configuration in which two light-emitting layers are stacked, and a configuration in which two electron transport layers are stacked. It is favorable that the hole transport layer has a two-layer configuration of a first hole transport layer and a second hole transport layer. InFIG.1, the layer configuration adopted in the example to be described later is shown. Specifically, the layer configuration in which a transparent anode 2, a hole injection layer 3, a hole transport layer 4, a light-emitting layer 5, an electron transport layer 6, an electron injection layer 7, and a cathode 8 are formed in the stated order on a glass substrate 1 is shown. Although detailed description of the layers will be described later, the present invention has important features in that the hole injection layer contains the arylamine compound I represented by the following general formula (1) and the electron acceptor. Hereinafter, the arylamine compound I and the electron acceptor will be described. Note that the arylamine compound I and the electron acceptor are used for a layer other than the hole injection layer in some cases. In this case, however, the composition of such a layer has a composition different from the hole injection layer. <Arylamine Compound I> The arylamine compound I contained in the hole injection layer has a structure represented by the following formula (1). The arylamine compound I has structural features in that it has two diarylamine benzene rings, and at least one aryl group (Ar5) is bonded to these benzene rings (Ar1to Ar5) Ar1to Ar5may be the same or differ, and each represent an aromatic hydrocarbon group, an aromatic heterocyclic group, or a fused polycyclic aromatic group. In the present specification, the fused polycyclic aromatic group contains no hetero atom (e.g., nitrogen atom, oxygen atom, or sulfur atom) in its skeleton. Ar3and Ar4do not necessarily need to be independently present and form a ring, but may be bonded to each other via a single bond, a substituted or unsubstituted methylene group, an oxygen atom, or a sulfur atom to form a ring. For example, in the compound 1-9 inFIG.3, Ar3and Ar4(any of which is a phenyl group) are bonded to each other via a single bond to form a ring. Ar3or Ar4may be bonded to a benzene ring to which an Ar3Ar4N-group is bonded, via a single bond, substituted or unsubstituted methylene group, an oxygen atom, or a sulfur atom to form a ring. For example, in the compound 1-8 inFIG.2, Ar3or Ar4(any of which is a phenyl group) is bonded to a benzene ring to which an Ar3Ar4N-group is bonded, via a single bond to form a ring. Specific examples of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by Ar1to Ar5include a phenyl group, biphenylyl group, a terphenylyl group, a naphthyl group, an anthracenyl group, a phenanthrenyl group, a fluorenyl group, an indenyl group, a pyrenyl group, a perylenyl group, a fluoranthenyl group, a triphenylenyl group, a pyridyl group, a pyrimidinyl group, a triazinyl group, a furyl group, a pyrrolyl group, a thienyl group, a quinolyl group, an isoquinolyl group, a benzofuranyl group, a benzothienyl group, an indolyl group, a carbazolyl group, a benzoxazolyl group, a benzothiazolyl group, a quinoxalinyl group, a benzimidazolyl group, a pyrazolyl group, a dibenzofuranyl group, a dibenzothienyl group, a naphthyridinyl group, a phenanthrolinyl group, an acridinyl group, a carbolinyl group, and a pyridobenzofuranyl group. The aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by Ar1to Ar5may be unsubstituted, but may have a substitution group. Examples of the substitution group include, in addition to a deuterium atom, a cyano group, a nitro group, and a trimethylsilyl group, the following groups:halogen atoms such as a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom;alkyl groups having 1 to 6 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, an n-pentyl group, an isopentyl group, a neopentyl group, and an n-hexyl group;alkyloxy groups having 1 to 6 carbon atoms, such as a methyloxy group, an ethyloxy group, and a propyloxy group;alkenyl groups such as a vinyl group and an allyl group;aryloxy groups such as a phenyloxy group and a tolyloxy group;arylalkyloxys group such as a benzyloxy group and a phenethyloxy group;aromatic hydrocarbon groups or fused polycyclic aromatic group such as a phenyl group, a biphenylyl group, a terphenylyl group, a naphthyl group, an anthracenyl group, a phenanthrenyl group, a fluorenyl group, an indenyl group, a pyrenyl group, a perylenyl group, a fluoranthenyl group, a triphenylenyl group, and an acenaphthenyl group,aromatic heterocyclic groups such as a pyridyl group, a pyrimidinyl group, a triazinyl group, a thienyl group, a furyl group, a pyrrolyl group, a quinolyl group, an isoquinolyl group, a benzofuranyl group, a benzothienyl group, an indolyl group, a carbazolyl group, a benzoxazolyl group, a benzothiazolyl group, a quinoxalinyl group, a benzimidazolyl group, a pyrazolyl group, a dibenzofuranyl group, a dibenzothienyl group, and carbolinyl group,aryl vinyl groups such as a styryl group and naphthyl vinyl group; andacyl groups such as an acetyl group and a benzoyl group. These substitution groups may be further substituted with the exemplified substitution groups. Further, these substitution groups do not necessarily need to be independently present and form a ring, but may be bonded to each other via a single bond, a substituted or unsubstituted methylene group, an oxygen atom, or a sulfur atom to form a ring. The alkyl groups having 1 to 6 carbon atoms, alkyloxy groups having 1 to 6 carbon atoms, and alkenyl groups may be linear or branched. (Ar6to Ar8) Ar6to Ar8may be the same or differ, and each represent a hydrogen atom, an aromatic hydrocarbon group, an aromatic heterocyclic group, or a fused polycyclic aromatic group. Examples of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by Ar6to Ar8include groups exemplified as the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by Ar1to Ar5. These groups represented by Ar6to Ar8may be unsubstituted, but may have a substitution group. Examples of the substitution group include substitution groups exemplified in the description of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by Ar1to Ar5. Embodiments that can be adopted by the substitution group are also the same. (n1) n1 represents an integer or 0, 1, or 2. In the case where n1 is 0, the two diarylaminobenzene rings are directly (via a single bond) connected to each other. In the case where n1 is 1, the two diarylaminobenzene rings are connected to each other via one phenylene group. In the case where n1 is 2, the two diaryl aminobenzene rings are connected to each other via two phenylene groups (biphenylene group). Favorable Embodiment Hereinafter, a favorable embodiment of the arylamine compound I will be described. However, in the description, the groups to which substituted/unsubstituted are not designated may have a substitution group or may be unsubstituted. In the arylamine compound I, as shown in the following general formula (1a), it is favorable that a phenylene group is bonded, between Ar7and Ar8, to a benzene ring to which an Ar3Ar4N-group is bonded. Ar1to Ar4may be the same or differ, and is favorably an aromatic hydrocarbon group, more favorably a phenyl group, a biphenyl group, a terphenylyl group, a naphthyl group, a fluoranthenyl group, or a fluorenyl group. Ar5is favorably an aromatic hydrocarbon group, more favorably a phenyl group, a biphenylyl group, or a naphthyl group. Ar6to Ar8may be the same or differ, is favorably a hydrogen atom or an aromatic hydrocarbon group, more favorably a hydrogen atom or a phenyl group. The substitution group that may be contained in the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by Ar1to Ar8is favorably a deuterium atom, an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 2 to 6 carbon atoms, an aromatic hydrocarbon group, or a fused polycyclic aromatic group, more favorably a deuterium atom, a methyl group, a phenyl group, a biphenylyl group, a naphthyl group, or a vinyl group. Further, an embodiment in which these substitution groups are bonded to each other via a single bond to form a fused aromatic ring is also favorable. n1 is favorably 0 from the viewpoint of the work function. An embodiment in which Ar3or Ar4is bonded to a benzene ring to which an Ar3Ar4N-group (diarylamino group containing Ar3, Ar4, and an nitrogen atom to which they are bonded) is bonded, via a single bond, a substituted or unsubstituted methylene group, an oxygen atom, or a sulfur atom to form a ring is also favorable. The bonding position in the benzene ring of this case is favorably adjacent to Ar3Ar4N-group. Although favorable specific example of the arylamine compound I are shown inFIGS.1to7, the arylamine compound I is not limited to these specific examples. Among the specific examples, 1-1 to 1-17, 1-19 to 1-38, and 1-41 to 1-44 correspond to the general formula (1a). Note that, 1-40 is a missing number. The arylamine compound I can be synthesized by a well-known method, e.g., cross-coupling such as Suzuki coupling, Buchwald-Hartwig reaction, and Goldberg amination reaction. Purification of the arylamine compound I can be performed by purification by column chromatography, adsorption purification by silica gel, activated carbon, activated clay and the like, recrystallization by solvent, a crystallization method, a sublimation purification method, or the like. Finally, purification by a sublimation purification method may be performed Identification of the compound can be performed by NMR analysis. As physical property-values, a melting point, a glass transition point (Tg), and a work function can be measured. The melting point is an index of a vapor deposition property. The melting point can be measured using a powder sample and a high sensitivity scanning calorimeter (DSC3100SA manufactured by Bruker AXS K.K.) The glass transition point (Tg) is an index of the stability of the thin-film state. The glass transition point (Tg) can be measured using a powder sample and a high sensitivity scanning calorimeter (DSC3100SA manufactured by Bruker AXS K.K.). The work function is an index of the hole transport property and the hole blocking property. The work function can be obtained by preparing a thin film of 100 nm on an ITO substrate and using an ionization potential measuring apparatus (PYS-202 manufactured by Sumitomo Heavy Industries, Ltd.) Also for the compounds (e.g., the radialene derivative n, the amine derivative III, the pyrimidine derivative IV, and the like to be described later) used for the organic EL element of the present invention other than the arylamine compound I, purification and various types of measurement can be performed by the same methods after synthesis. <Electron Acceptor> Examples of the electron acceptor to be doped into the arylamine compound I in the hole injection layer 3 include tris(bromophenyl amine) hexachloroantimony, tetracyanoquinone dimethane (TCNQ), 2,3,5,6-tetrafluoro-tetracyano-1,4-benzoquinone dimethane (F4TCNQ), and radialene derivatives (e.g., see Japanese Patent Application Laid-open No. 2011-100621), and the radialene derivative II represented by the following general formula (2) is favorably used. (Ar9to Ar11) Ar9to Ar11may be the same or differ, and each represent a group having an electron receptor group as a substitution group, which is an aromatic hydrocarbon group, an aromatic heterocyclic group, or a fused polycyclic aromatic group. Regarding Ar9to Ar11, examples of the electron receptor group include a fluorine atom, a chlorine atom, a bromine atom, a cyano group, a trifluoromethyl group, and a nitro group. Regarding Ar9to Ar11, examples of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group include groups exemplified as the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by Ar1to Ar5in the general formula (1). These groups represented by Ar9to Ar11may each have a substitution group other than the electron receptor group. Examples of the substitution group include, in addition to a deuterium atom, the following groups.aromatic hydrocarbon groups or fused polycyclic aromatic groups such as a phenyl group, a biphenylyl group, a terphenylyl group, a naphthyl group, an anthracenyl group, a phenanthrenyl group, a fluorenyl group, an indenyl group, a pyrenyl group, a perylenyl group, a fluoranthenyl group, and a triphenylenyl group; andaromatic heterocyclic groups such as a pyridyl group, a pyrimidinyl group, a triazinyl group, a thienyl group, a furyl group, a pyrrolyl group, a quinolyl group, an isoquinolyl group, a benzofuranyl group, a benzothienyl group, an indolyl group, a carbazolyl group, a benzoxazolyl group, a benzothiazolyl group, a quinoxalinyl group, a benzimidazolyl group, a pyrazolyl group, a dibenzofuranyl group, a dibenzothienyl group, and a carbolinyl group. These substitution groups may be further substituted with the exemplified substitution groups or electron receptor groups. Further, these substitution groups do not necessarily need to be independently present and form a ring, but may be bonded to each other via a single bond, a substituted or unsubstituted methylene group, an oxygen atom, or a sulfur atom to form a ring. Favorable Embodiment Hereinafter, a favorable embodiment of the radialene derivative II will be described. However, in the description, the groups to which substituted/unsubstituted are not designated may have a substitution group or may be unsubstituted. Regarding Ar9to Ar11, the electron receptor group is favorably a fluorine atom, a chlorine atom, a cyano group, or a trifluoromethyl group. Regarding Ar9to Ar11, the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group is favorably an aromatic hydrocarbon group, a fused polycyclic aromatic group, or a pyridyl group, more favorably a phenyl group, a biphenylyl group, a terphenyl group, a naphthyl group, a phenanthrenyl group, a fluorenyl group, or a pyridyl group. Regarding Ar9to Ar11, it is favorable that as an embodiment, at least one group, favorably all the groups each have a receptor group as a substitution group. Ar9to Ar11may be the same or differ, and is favorably a phenyl group or pyridyl group completely substituted with a fluorine atom, a chlorine atom, a cyano group, or a trifluoromethyl group, more favorably a tetrafluoropyridyl group, a tetrafluoro-(trifluoromethyl) phenyl group, a cyano-tetrafluorophenyl group, a dichloro-difluoro-(trifluoromethyl) phenyl group, or a pentafluorophenyl group. In the organic EL element of the present invention, each layer can adopt various embodiments as long as the hole injection layer contains the above-mentioned arylamine compound I and electron acceptor. Hereinafter, each layer will be described in detail with reference toFIG.1. <Anode 2> In the organic EL element of the present invention, the anode 2 is provided on the substrate 1 For the anode 2, an electrode material having a large work function, such as ITO and gold is used. <Hole Injection Layer 3> Between the anode 2 and the hole transport layer 4, the hole injection layer 3 is provided. In the hole injection layer 3, the arylamine compound 1 is P-doped with an electron acceptor. In addition to the arylamine compound I and the electron acceptor, a well-known hole injection/transport material may be mixed or used at the same time. As the well-known material, for example, a starburst-type triphenylamine derivative, a material such as various triphenylamine tetramers; a porphyrin compound typified by copper phthalocyanine; an acceptor heterocyclic compound such as hexacyanoazatriphenylene; and a coating-type polymer material can be used. By forming a thin film using these materials by a well-known method such as a vapor deposition method, a spin coating method, and an inkjet method, the hole injection layer 3 can be obtained. The layers described below can be similarly obtained by forming a thin film by a well-known method such as a vapor deposition method, a spin coating method, and an inkjet method. <Hole Transport Layer 4> On the hole injection layer 3, the hole transport layer 4 is provided. The hole transport layer 4 may contain, in addition to the arylamine compound I represented by the general formula (1), the well-known materials exemplified below:benzidine derivatives such asN,N′-diphenyl-N,N′-di(m-tolyl) benzidine (TPD),N,N′-diphenyl-N,N′-di(α-naphthyl) benzidine (NPD), andN,N,N′,N′-tetrabiphenylyl benzidine;arylamine compounds having two triphenylamine structures in the molecules in which the triphenylamine structures are linked by a single bond or a divalent group that contains no hetero atom, such as1,1-bis[4-(di-4-tolylamino)phenyl]cyclohexane (TAPC);an arylamine compound having four triphenylamine structures in the molecules in which the triphenylamine structures are linked by a single bond or a divalent group that contains no hetero atom; andvarious triphenylamine trimers. Further, a coating-type polymer material such as poly(3,4-ethylenedioxythiophene) (PEDOT)/poly(styrene sulfonate) (PSS) can be used for forming the hole injection layer 3 serving also as the hole transport layer 4. For the hole transport layer 4, a hole transport arylamine compound is favorably used, the above-mentioned arylamine compound 1 is more favorably used, and the arylamine compound I that is not P-doped with an electron acceptor is particularly favorably used. That is, it is particularly favorable to selectively use an electron acceptor in the hole injection layer. These materials may be used alone for film formation, but may be mixed with another material for film formation. Also in the case of the following organic layers described below, films can be similarly formed. The hole transport layer 4 may have a structure in which layers each formed alone are stacked, a structure in which layers formed by being mixed are stacked, or a structure in which a layer formed alone and a layer formed by being mixed are stacked. Also the following organic layers described below can have a structure similar thereto. <Electron Blocking Layer> Between the hole transport layer 4 and the light-emitting layer 5, an electron blocking layer (not shown) can be provided. For the electron blocking layer, the above-mentioned arylamine compound I is favorably used. In addition, the well-known compounds having an electron blocking operation exemplified below can be used:arylamine compounds having four triphenylamine structures in the molecules in which the triphenylamine structures are linked by a single bond or a divalent group that contains no hetero atom;arylamine compounds having two triphenylamine structures in the molecules in which the triphenylamine structures are linked by a single bond or a divalent group that contains no hetero atom;carbazole derivatives such as4,4′,4″-tri(N-carbazolyl) triphenylamine (TCTA),9,9-bis[4-(carbazol-9-yl)phenyl]fluorene,1,3-bis(carbazol-9-yl) benzene (mCP), and2,2-bis(4-carbazol-9-ylphenyl) adamantane (Ad-Cz), andtriarylamine compounds having a triphenylsilyl group such as 9-[4-(carbazol-9-yl)phenyl]-9-[4-(triphenylsilyl)phenyl]-9H-fluorene. It is favorable that the layers (e.g., the hole transport layer 4 and the electron blocking layer) adjacent to the light-emitting layer 5 is not P-doped with an electron acceptor. For these layers, an arylamine compound having a high electron blocking property is favorably used, and the above-mentioned arylamine compound I is more favorably used. Further, the film thickness of these layers is not particularly limited as long as it is within a general range. For example, the film thickness of the hole transport layer 4 is 20 to 100 nm, and the film thickness of the electron blocking layer is 5 to 30 nm. <Light-Emitting Layer 5> For the light-emitting layer 5, the amine derivative III represented by the following general formula (3), a well-known pyrene derivative, or the like is used. Alternatively, a well-known light-emitting material may be used Examples of the well-known light-emitting material include: various metal complexes such as a metal complex of a quinolinol derivative including Alq3; an anthracene derivative; a bisstyrylbenzene derivative; an oxazole derivative, and a polyparaphenylene vinylene derivative. The light-emitting layer 5 favorably includes a host material and a dopant material. As the host material, although depending on the combination with the dopant material, not only the above-mentioned light-emitting material, but also a thiazole derivative, a benzimidazole derivative, a polydialkylfluorene derivative, and the like can be used, and an anthracene derivative is favorably used. As the dopant material, for example, the amine derivative III, a pyrene derivative; quinacridone, coumarin, rubrene, perylene, and derivatives thereof; a benzopyran derivative; an indenophenanthrene derivative; a rhodamine derivative; and an aminostyryl derivative can be used. In the light-emitting layer, a blue light-emitting dopant is favorably used. The blue light-emitting dopant is favorably the amine derivative III or a pyrene derivative, more favorably the amine derivative III. Amine derivative III (A1) A1represents a divalent aromatic hydrocarbon group, a divalent aromatic heterocyclic ring group, a divalent fused polycyclic aromatic group, or a single bond. In the present specification, the divalent aromatic hydrocarbon group, the divalent aromatic heterocyclic ring group, and the divalent fused polycyclic aromatic group respectively represent divalent groups obtained by removing two hydrogen atoms from the aromatic hydrocarbon, the aromatic heterocyclic ring, and the fused polycyclic aromatic. Regarding A1, examples of the aromatic hydrocarbon, the aromatic heterocyclic ring, or the fused polycyclic aromatic include benzene, biphenyl, terphenyl, tetrakisphenyl, styrene, naphthalene, anthracene, acenaphthalene, fluorene, phenanthrene, indane, pyrene, triphenylene, pyridine, pyrimidine, triazine, pyrrole, franc, thiophene, quinoline, isoquinoline, benzofuran, benzothiophene, indoline, carbazole, carboline, benzoxazole, benzothiazole, quinoxaline, benzimidazole, pyrazole, dibenzofuran, dibenzothiophene, naphthyridine, phenanthroline, and acridine. These divalent groups represented by A1may be unsubstituted, but may have a substitution group. Examples of the substitution group include substitution groups exemplified in the description of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by Ar1to Ar5in the general formula (1). Embodiments that can be adopted are also the same. (Ar12, Ar13) Ar12and Ar13may be the same or differ, and each represent an aromatic hydrocarbon group, an aromatic heterocyclic group, or a fused polycyclic aromatic group. Ar12and Ar13do not necessarily need to be independently present and form a ring, but may be bonded to each other via a single bond, a substituted or unsubstituted methylene group, an oxygen atom, or a sulfur atom to form a ring. In the case where Ar12or Ar13has a substitution group, Ar12and Ar13may be bonded to each other via the substitution group and a single bond, a substituted or unsubstituted methylene group, an oxygen atom, or a sulfur atom, but may be bonded to each other not via a substitution group. Examples of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by Ar12and Ar13include groups exemplified as the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by Ar1to Ar5in the general formula (1). These groups represented by Ar12and Ar13may be unsubstituted, or may have a substitution group. Examples of the substitution group include the substitution groups exemplified in the description of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by Ar1to Ar5in the general formula (1). Embodiments that can be adopted are also the same. (R1to R4) R1to R4may be the same or differ, and each represent a hydrogen atom; a deuterium atom; a fluorine atom; a chlorine atom; a cyano group; a nitro group; an alkyl group having 1 to 6 carbon atoms; a cycloalkyl group having 5 to 10 carbon atoms, an alkenyl group having 2 to 6 carbon atoms; an alkyloxy group having 1 to 6 carbon atoms; a cycloalkyloxy group having 5 to 10 carbon atoms; an aromatic hydrocarbon group; an aromatic heterocyclic group; a fused polycyclic aromatic group; an aryloxy group; or a di-substituted amino group substituted by a group selected from an aromatic hydrocarbon group, an aromatic heterocyclic group, or a fused polycyclic aromatic group. The alkyl group having 1 to 6 carbon atoms, the alkenyl group having 2 to 6 carbon atoms, and the alkyloxy group having 1 to 6 carbon atoms may be linear or branched. R1to R4do not necessarily need to be independently present and form a ring, but may be bonded to each other via a single bond, a substituted or unsubstituted methylene group, an oxygen atom, or a sulfur atom to form a ring. Note that in the case where R1to R4are di-substituted amino groups, the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group in the di-substituted amino group contributes to ring formation. Further, in the benzene ring to which R1to R4are bonded, to a vacancy caused by elimination of any one of R1to R4, another group of R1to R4may be bonded via a substituted or unsubstituted methylene group, an oxygen atom, a sulfur atom, or a monosubstituted amino group, thereby forming a ring. Note that in the case where R1to R4are di-substituted amino groups, the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group in the di-substituted amino group contributes to ring formation with the benzene ring. A substitution group of the monosubstituted amino group that is one of linking groups is an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 5 to 10 carbon atoms, an aromatic hydrocarbon group, an aromatic heterocyclic group, or a fused polycyclic aromatic group. Examples of the alkyl group having 1 to 6 carbon atoms or the cycloalkyl group having 5 to 10 carbon atoms include groups exemplified in the description of the alkyl group having 1 to 6 carbon atoms or the cycloalkyl group having 5 to 10 carbon atoms represented by R1to R4to be described later. Examples of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group include groups exemplified in the description of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by R1to R4to be described later. These substitution groups of the monosubstituted amino group may be unsubstituted, but may have a different substitution group. In the case where the monosubstituted amino group has an alkyl group having 1 to 6 carbon atoms or a cycloalkyl group having 5 to 10 carbon atoms, examples of the different substitution group include groups exemplified in the description of the alkyl group having 1 to 6 carbon atoms, the cycloalkyl group having 5 to 10 carbon atoms, or the alkenyl group having 2 to 6 carbon atoms represented by R1to R4to be described later. Embodiments that can be adopted are also the same. Further, in the case where the monosubstituted amino group has an aromatic hydrocarbon group, an aromatic heterocyclic group, or a fused polycyclic aromatic group, examples of the different substitution group include substitution groups exemplified in the description of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by R1to R4to be described later Embodiments that can be adopted are also the same. Specific examples of the alkyl group having 1 to 6 carbon atoms, the cycloalkyl group having 5 to 10 carbon atoms, or the alkenyl group having 2 to 6 carbon atoms represented by R1to R4include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, an n-pentyl group, an isopentyl group, a neopentyl group, an n-hexyl group, and the like; a cyclopentyl group, a cyclohexyl group, a 1-adamantyl group, a 2-adamantyl group, and the like, a vinyl group, an allyl group, an isopropenyl group, a 2-butenyl group, and the like. The alkyl group having 1 to 6 carbon atoms, the cycloalkyl group having 5 to 10 carbon atoms, or the alkenyl group having 2 to 6 carbon atoms represented by R1to R4may be unsubstituted, but may have a substitution group. Examples of the substitution group include, in addition to a deuterium atom, a cyano group, and a nitro group, the following groups:halogen atoms such as a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom;alkyloxy groups having 1 to 6 carbon atoms, such as a methyloxy group, an ethyloxy group, and a propyloxy group;alkenyl groups such as a vinyl group and an allyl group;aryloxy groups such as a phenyloxy group and a tolyloxy group;arylalkyloxy groups such as a benzyloxy group and a phenethyloxy group;aromatic hydrocarbon groups or fused polycyclic aromatic groups such as a phenyl group, a biphenylyl group, a terphenylyl group, a naphthyl group, an anthracenyl group, a phenanthrenyl group, a fluorenyl group, an indenyl group, a pyrenyl group, a perylenyl group, a fluoranthenyl group, and a triphenylenyl group;aromatic heterocyclic groups such as a pyridyl group, a pyrimidinyl group, a triazinyl group, a thienyl group, a furyl group, a pyrrolyl group, a quinolyl group, an isoquinolyl group, a benzofuranyl group, a benzothienyl group, an indolyl group, a carbazolyl group, a benzoxazolyl group, a benzothiazolyl group, a quinoxalinyl group, a benzimidazolyl group, a pyrazolyl group, a dibenzofuranyl group, a dibenzothienyl group, and a carbolinyl group;a di-substituted amino group substituted with an aromatic hydrocarbon group or a fused polycyclic aromatic group, such as a diphenylamino group and a di naphthylamino group;a di-substituted amino group substituted with an aromatic heterocyclic group, such as a dipyridylamino group and a dithienylamino group; anda di-substituted amino group substituted with an aromatic hydrocarbon group, a fused polycyclic aromatic group, or an aromatic heterocyclic group. These substitution groups may be unsubstituted, but may be further substituted with the exemplified substitution groups. Further, these substitution groups do not necessarily need to be independently present and form a ring, but may be bonded to each other via a single bond, a substituted or unsubstituted methylene group, an oxygen atom, or a sulfur atom to form a ring. The alkyloxy group having 1 to 6 carbon atoms and the alkenyl group may be linear or branched. Specific examples of the alkyloxy group having 1 to 6 carbon atoms or the cycloalkyloxy group having 5 to 10 carbon atoms represented by R1to R4include a methyloxy group, an ethyloxy group, an n-propyloxy group, an isopropyloxy group, an n-butyloxy group, a tert-butyloxy group, an n-pentyloxy group, an n-hexyloxy group, and the like; and a cyclopentyloxy group, a cyclohexyloxy group, a cycloheptyloxy group, a cyclooctyloxy group, a 1-adamantyloxy group, 2-adamantyloxy group, and the like. These groups represented by R1to R4may be unsubstituted, or may have a substitution group. Examples of the substitution group include groups exemplified in the description of the alkyl group having 1 to 6 carbon atoms, the cycloalkyl group having 5 to 10 carbon atoms, or the alkenyl group having 2 to 6 carbon atoms represented by R1to R4. Embodiments that can be adopted are also the same. Examples of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by R1to R4include groups exemplified as the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by Ar1to Ar5in the general formula (1). The aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by R1to R4may be unsubstituted, but may have a substitution group. Examples of the substitution group include, in addition to a deuterium atom, a cyano group, a nitro group, and a trimethylsilyl group, the following groups:halogen atoms such as a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom;alkyl groups having 1 to 6 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, an n-pentyl group, an isopentyl group, a neopentyl group, and an n-hexyl group;alkyloxy groups having 1 to 6 carbon atoms, such as a methyloxy group, an ethyloxy group, and a propyloxy group;alkenyl groups such as a vinyl group and an allyl group;aryloxy groups such as a phenyloxy group and a tolyloxy group;arylalkyloxy groups such as a benzyloxy group and a phenethyloxy group;aromatic hydrocarbon groups or fused polycyclic aromatic groups such as a phenyl group, a biphenylyl group, a terphenylyl group, a naphthyl group, an anthracenyl group, a phenanthrenyl group, a fluorenyl group, an indenyl group, a pyrenyl group, a perylenyl group, a fluoranthenyl group, and a triphenylenyl group;aromatic heterocyclic groups such as a pyridyl group, a pyrimidinyl group, a triazinyl group, a thienyl group, a furyl group, a pyrrolyl group, a quinolyl group, an isoquinolyl group, a benzofuranyl group, a benzothienyl group, an indolyl group, a carbazolyl group, a benzoxazolyl group, a benzothiazolyl group, a quinoxalinyl group, a benzimidazolyl group, a pyrazolyl group, a dibenzofuranyl group, a dibenzothienyl group, and a carbolinyl group,aryl vinyl groups such as a styryl group and naphthyl vinyl group;acyl groups such as an acetyl group and a benzoyl group;silyl groups such as a trimethylsilyl group and a triphenylsilyl group;di-substituted amino groups substituted with an aromatic hydrocarbon group or a fused polycyclic aromatic group, such as a diphenylamino group and a dinaphthylamino group;di-substituted amino groups substituted with an aromatic heterocyclic group, such as a dipyridylamino group and a dithienylamino group; anddi-substituted amino groups substituted with a substation group selected from an aromatic hydrocarbon group, a fused polycyclic aromatic group, or an aromatic heterocyclic group. These substitution groups may be unsubstituted, but may be further substituted with the exemplified substitution groups. Further, these substitution groups do not necessarily need to be independently present and form a ring, but may be bonded to each other via a single bond, a substituted or unsubstituted methylene group, an oxygen atom, or a sulfur atom to form a ring. The alkyl group having 1 to 6 carbon atoms, the alkyloxy group having 1 to 6 carbon atoms, and the alkenyl group may be linear or branched. Specific examples of the aryloxy group represented by R1to R4include a phenyloxy group, a biphenylyloxy group, a terphenylyloxy group, a naphthyloxy group, an anthracenyloxy group, a phenanthrenyloxy group, a fluorenyloxy group, an indenyloxy group, a pyrenyloxy group, and a perylenyloxy group. These groups represented by R1to R4may be unsubstituted, but may have a substitution group. Examples of the substitution group include the substitution groups exemplified in the description of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by R1to R4. Embodiments that can be adopted by the substitution group are also the same. Examples of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group as the substitution group of the di-substituted amino group represented by R1to R4include the groups exemplified as the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by Ar1to Ar5in the general formula (1). These substitution groups of the di-substituted amino group may be unsubstituted, but may have a different substitution group. In this case, example of the different substitution group include the substitution groups exemplified in the description of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by R1to R4. Embodiments that can be adopted by the substitution group are also the same. (R5to R7) R5to R7may be the same or differ, and each represent a hydrogen atom, a deuterium atom, a fluorine atom, a chlorine atom, a cyano group, a nitro group, an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 5 to 10 carbon atoms, an alkenyl group having 2 to 6 carbon atoms, an alkyloxy group having 1 to 6 carbon atoms, a cycloalkyloxy group having 5 to 10 carbon atoms, an aromatic hydrocarbon group, an aromatic heterocyclic group, a fused polycyclic aromatic group, or an aryloxy group. The alkyl group having 1 to 6 carbon atoms, the alkenyl group having 2 to 6 carbon atoms, and the alkyloxy group having 1 to 6 carbon atoms may be linear or branched. R5to R7do not necessarily need to be independently present and form a ring, but may be bonded to each other via a single bond, a substituted or unsubstituted methylene group, an oxygen atom, or a sulfur atom to form a ring. Further, for example, as in compounds 3-1 to 3-21 shown inFIG.8toFIG.10, in a benzene ring to which R5to R7are bonded, to a vacancy caused by elimination of any one group of R5to R7, another group of R5to R7may be bonded via a substituted or unsubstituted methylene group, an oxygen atom, a sulfur atom, or a monosubstituted amino group, thereby forming a ring. The substitution group of the monosubstituted amino group that is one of linking groups is an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 5 to 10 carbon atoms, an aromatic hydrocarbon group, an aromatic heterocyclic group, or a fused polycyclic aromatic group. Examples of these groups include the groups exemplified in the description of the monosubstituted amino group in R1to R4. These groups of the monosubstituted amino group may be unsubstituted, but may have a different substitution group. Examples of the different substitution group include the groups exemplified as the different substitution group of the monosubstituted amino group in R1to R4. Embodiments that can be adopted are also the same. Examples of the alkyl group having 1 to 6 carbon atoms, the cycloalkyl group having 5 to 10 carbon atoms, the alkenyl group having 2 to 6 carbon atoms, the alkyloxy group having 1 to 6 carbon atoms, or the cycloalkyloxy group having 5 to 10 carbon atoms represented by R5to R7include the groups exemplified as the alkyl group having 1 to 6 carbon atoms, the cycloalkyl group having 5 to 10 carbon atoms, the alkenyl group having 2 to 6 carbon atoms, the alkyloxy group having 1 to 6 carbon atoms, and the cycloalkyloxy group having 5 to 10 carbon atoms represented by R1to R4. These groups represented by R5to R7may be unsubstituted, but may have a substitution group. Examples of the substitution group include the substitution groups exemplified in the description of the alkyl group having 1 to 6 carbon atoms, the cycloalkyl group having 5 to 10 carbon atoms, or the alkenyl group having 2 to 6 carbon atoms represented by R1to R4. Embodiments that can be adopted by the substitution group are also the same. Examples of the aromatic hydrocarbon group, the aromatic heterocyclic group, the fused polycyclic aromatic group, or the aryloxy group represented by R5to R7include the groups exemplified as the aromatic hydrocarbon group, the aromatic heterocyclic group, the fused polycyclic aromatic group, of the aryloxy group represented by R1to R4. These groups represented by R5to R7may be unsubstituted, but may have a substitution group. Examples of the substitution group include the substitution groups exemplified in the description of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by R1to R4. Embodiments that can be adopted by the substitution group are also the same. (R8, R9) R8and R9may be the same or differ, and each represent an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 5 to 10 carbon atoms, an alkenyl group having 2 to 6 carbon atoms, an aromatic hydrocarbon group, an aromatic heterocyclic group, a fused polycyclic aromatic group, or an aryloxy group. The alkyl group having 1 to 6 carbon atoms and the alkenyl group having 2 to 6 carbon atoms may be linear or branched. R8and R9do not necessarily need to be independently present and form a ring, but may be bonded to each other via a single bond, a substituted or unsubstituted methylene group, an oxygen atom, a sulfur atom, or a monosubstituted amino group to form a ring. The substitution group of the monosubstituted amino group that is one of linking groups is an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 5 to 10 carbon atoms, an aromatic hydrocarbon group, an aromatic heterocyclic group, or a fused polycyclic aromatic group Examples of these groups include the groups exemplified in the description of the monosubstituted amino group in R1to R4. These groups of the monosubstituted amino group may be unsubstituted, but may have a different substitution group. Examples of the different substitution group include the groups exemplified as the different substitution group of the monosubstituted amino group in R1to R4. Embodiments that can be adopted are also the same. Examples of the alkyl group having 1 to 6 carbon atoms, the cycloalkyl group having 5 to 10 carbon atoms, or the alkenyl group having 2 to 6 carbon atoms represented by R8and R9include the groups exemplified as the alkyl group having 1 to 6 carbon atoms, the cycloalkyl group having 5 to 10 carbon atoms, or the alkenyl group having 2 to 6 carbon atoms represented by R1to R4. These groups represented by R8and R9may be unsubstituted, but may have a substitution group. Examples of the substitution group include the substitution groups exemplified in the description of the alkyl group having 1 to 6 carbon atoms, the cycloalkyl group having 5 to 10 carbon atoms, or the alkenyl group having 2 to 6 carbon atoms represented by R1to R4. Embodiments that can be adopted by the substitution group are also the same. Examples of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by R8and R9include the groups exemplified as the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by R1to R4. These groups represented by R8and R9may be unsubstituted, but may have a substitution group. Examples of the substitution group include the substitution groups exemplified in the description of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by Ar1to Ar5in the general formula (1). Embodiments that can be adopted by the substitution group are also the same. Examples of the aryloxy group represented by R8and R9include the groups exemplified as the aryloxy group represented by R1to R4. The aryloxy group represented by R8and R9may be unsubstituted, but may have a substitution group. Examples of the substitution group include the substitution groups exemplified in the description of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by R1to R4. Embodiments that can be adopted by the substitution group are also the same. Favorable Embodiment Hereinafter, a favorable embodiment of the amine derivative III will be described. However, in the description of the favorable embodiment, the groups to which substituted/unsubstituted are not designated may have a substitution group or may be unsubstituted. A1is favorably a divalent aromatic hydrocarbon group or a single bond, more favorably a divalent group obtained by removing two hydrogen atoms from benzene, biphenyl, or naphthalene, or a single bond, and more favorably a single bond. Ar12and Ar13may be the same or differ, and are each favorably a phenyl group, a biphenylyl group, a naphthyl group, a fluorenyl group, an indenyl group, a pyridyl group, a dibenzofuranyl group, a pyri dobenzofuranyl group. It is favorable that at least one of R1to R4is a di-substituted amino group. In this case, the substitution group of the di-substituted amino group is favorably a phenyl group, a biphenylyl group, a naphthyl group, a fluorenyl group, an indenyl group, a pyridyl group, a dibenzofuranyl group, or a pyridobenzofuranyl group. Regarding R1to R4, for example, as in the following general formulae (3c-a) and (3c-b), an embodiment in which adjacent two or all groups are vinyl groups and the adjacent two vinyl groups are bonded to each other via a single bond to form a fused ring, i.e., an embodiment in which R1to R4form a naphthalene ring or a phenanthrene ring with a benzene ring to which R1to R4are bonded is also favorable. For example, as in the following general formulae (3b-a), (3b-b), (3b-c), and (3b-d), an embodiment in which any one of R1to R4is an aromatic hydrocarbon group and such an aromatic hydrocarbon group is bonded, via a substituted or unsubstituted methylene group, an oxygen atom, or a sulfur atom, to a vacancy caused by elimination of a group (R1to R4) adjacent to the aromatic hydrocarbon group from a benzene ring to form a ring is also favorable. In this case, the aromatic hydrocarbon group is favorably a phenyl group. The ring formed with the benzene ring is favorably a dibenzofuran ring or a dibenzothiophene ring. For example, as in the following general formulae (3a-a), (3a-b), (3b-a), (3b-b), (3b-c), (3b-d), (3c-a), and (3c-b), an embodiment in which any one of R5to R7is an aromatic hydrocarbon group and such an aromatic hydrocarbon group is bonded, via a substituted or unsubstituted methylene group, an oxygen atom, or a sulfur atom, to a vacancy caused by elimination of a group (R5to R7) adjacent to the aromatic hydrocarbon group from a benzene ring to form a ring is also favorable. In this case, the aromatic hydrocarbon group is favorably a phenyl group. The ring formed with the benzene ring is favorably a dibenzofuran ring or a dibenzothiophene ring. As the embodiment in which R1to R7are bonded to each other to form a ring or the embodiment in which any one of R1to R7is eliminated from the benzene ring to cause a vacancy and the adjacent group (another group of R1to R7) is bonded to such a vacancy to form a ring in the amine derivative III as described above, the embodiment represented by the following general formula (3a-a) or (3a-b) is favorable Examples of such a favorable embodiment include the following general formulae (3b-a), (3b-b), (3b-c), (3b-d), (3c-a), and (3c-b). In the formula, X and Y may be the same or differ, and each represent an oxygen atom or a sulfur atom. A1, Ar12, Ar13, R1to R4, and R7to R9each have the meaning as described in the general formula (3). In the general formulae (3a-a) and (3a-b), to a vacancy caused by elimination of R5or R6in the general formula (3), the adjacent R6or R5(phenyl group) is bonded via a linking group X, thereby forming a fused ring. In addition, in the general formulae (3b-a) to (3b-d), to a vacancy caused by elimination of R3or R4, the adjacent R4or R3(phenyl group) is bonded via a linking group Y, thereby forming a fused ring. In addition, in the general formulae (3c-a) and (3c-b), R3and R4are each a vinyl group and bonded to each other via a single bond to form a fused ring. Regarding R1to R7, the most favorable embodiment is an embodiment in which R1to R4are not independently present and do not form a ring and R5to R7are bonded to each other to form a ring, or any one of R5to R7is eliminated from a benzene ring to cause a vacancy and the adjacent group (another group of R5to R7) is bonded to such a vacancy to form a ring. R8and R9may be the same or differ, and are each favorably an aromatic hydrocarbon group, an aromatic heterocyclic group, or a fused polycyclic aromatic group, more favorably a phenyl group, a naphthyl group, a phenanthrenyl group, a pyridyl group, a quinolyl group, an isoquinolyl group, or a dibenzofuranyl group, and particularly favorably a phenyl group. Further, an embodiment in which R8and R9are bonded to each other via a single bond, a substituted or unsubstituted methylene group, an oxygen atom, a sulfur atom, or a monosubstituted amino group to form a ring is favorable, and an embodiment in which R8and R9are bonded to each other via a single bond to form a ring is more favorable. As the embodiment in which R8and R9are bonded to each other to form a ring, the embodiment represented by the following general formula (3a-a1) or (3a-b1) is favorable. Examples of such an embodiment includes the embodiment represented by the following general formulae (3b-a1), (3b-b1), (3b-c1), (3b-d1), (3c-a1), and (3c-b1). In the formula, X and Y may be the same or differ, and each represent an oxygen atom or a sulfur atom A1, Ar12, Arn, R1to R4and R each have the meaning as described in the general formula (3). The general formulae (3a-a1), (3a-b1), (3b-a1), (3b-b1), (3b-c1), (3b-d1), (3c-a1), and (3c-b1) respectively have structures in which R8and R9(any of which is a phenyl group) are bonded to each other via a single bond to form a fused ring in the general formulae (3a-a), (3a-b), (3b-a), (3b-b), (3b-c), (3b-d), (3c-a), and (3c-b). Although favorable specific examples of the amine derivative III are shown inFIG.8toFIG.10, the amine derivative III is not limited to these specific examples. Among the compounds shown as specific examples, compounds corresponding to the general formulae (3a-a) and (3a-b) are as follows.3a-a:3-1 to 3-3, 3-5 to 3-9, 3-12 to 3-14, and 3-16 to 3-193a-b:3-4 and 3-15 Among them, those corresponding to the general formulae (3b-a), (3b-b), (3b-c), (3b-d), (3c-a) and (3c-b) are as follows.3b-c:3-9, 3-193c-a:3-2, 3-3, 3-7, 3-13, 3-14, and 3-17 Further, compounds corresponding to the general formulae (3a-a1) and (3a-b1) are as follows.3a-a1:3-1 to 3-3, and 3-7 to 3-93a-b1:3-4 Among them, compounds corresponding to the general formulae (3b-a1), (3b-b1), (3b-c1), (3b-d1), (3c-a1), and (3c-b1) are as follows.3b-c1:3-93c-a1:3-2, 3-3, and 3-7 The amine derivative III itself can be synthesized according to a well-known method (see, for example, Patent Document 7). Further, in the light-emitting layer, a phosphorescent emitter can be used as a light-emitting material. As the phosphorescent emitter, a phosphorescent emitter of a metal complex of iridium, platinum, or the like can be used. Specifically, a green phosphorescent emitter such as Ir(ppy)3; a blue phosphorescent emitter such as FIrpic and FIr6; a red phosphorescent emitter such as Btp2Ir (acac), and the like can be used. In this case, as a host material, for example, the following hole injection/transport host material can be used. Carbazole derivatives such as 4,4′-di(N-carbazolyl) biphenyl (CBP), TCTA, and mCP. Further, for example, the following electron transport host material can be used.P-bis(triphenylsilyl) benzene (UGH2), and2,2′,2″-(1,3,5-phenylene)-tris(1-phenyl-1H-benzimidazole) (TPBI). By using such a host material, it is possible to prepare an organic EL element with high performance. In order to avoid concentration quenching, it is favorable to dope a host material with a phosphorescent emitter by co-vapor deposition in the range of 1 to 30 percent by weight with respect to the entire light-emitting layer. As the light-emitting material, a material that emits delayed fluorescence, such as CDCB derivatives including PIC-TRZ, CC2TA, PXZ-TRZ, and 4CzIPN, can also be used. <Hole Blocking Layer> On the light-emitting layer 5, a hole blocking layer (not shown) can be provided. For the hole blocking layer, a well-known compound having a hole blocking operation can be used. For example, phenanthroline derivatives such as bathocuproine (BCP); metal complexes of a quinolinol derivative such as aluminum fill) bis(2-methyl-8-quinolinato)-4-phenylphenolate (BAlq); various rare earth complexes; triazole derivatives; triazine derivative; and oxadiazole derivatives; can be used. These materials may serve also as a material of the electron transport layer. <Electron Transport Layer 6> For the electron transport layer 6, it is favorable to use the pyrimidine derivative IV represented by the following general formula (4). Pyrimidine Derivative IV; The pyrimidine derivative IV has, for example, the following two embodiments. In the general formula (4a), Ar16is located adjacent to Ar15. In the general formula (4b), a benzene ring to which R10to R13and Ar17are bonded is located adjacent to Ar15. (Ar14) Ar14represents an aromatic hydrocarbon group or a fused polycyclic aromatic group. Specific examples of the aromatic hydrocarbon group or the fused polycyclic aromatic group represented by Ar14include a phenyl group, a biphenylyl group, a terphenylyl group, a tetrakisphenyl group, a styryl group, a naphthyl group, an anthracenyl group, an acenaphthenyl group, a phenanthrenyl group, a fluorenyl group, an indenyl group, a pyrenyl group, a perylenyl group, a fluoranthenyl group, and a triphenylenyl group. These groups represented by Ar14may be unsubstituted, but may have a substitution group Examples of the substitution group include the substitution groups exemplified in the description of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by Ar1to Ar5in the general formula (1). Embodiments that can be adopted by the substitution group are also the same. (Ar15, Ar16) Ar15and Ar16may be the same or differ, and each represent a hydrogen atom, an aromatic hydrocarbon group, or a fused polycyclic aromatic group. Note that Ar15and Ar16are not simultaneously hydrogen atoms. Examples of the aromatic hydrocarbon group or the fused polycyclic aromatic group represented by Ar15and Ar16include the groups exemplified as Ar14. These groups represented by Ar15and Ar16may be unsubstituted, but may have a substitution group. Examples of the substitution group include the substitution groups exemplified in the description of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by Ar1to Ar5in the general formula (1). Embodiments that can be adopted by the substitution group are also the same. (Ar17) Ar17represents an aromatic heterocyclic group. Specific examples of the aromatic heterocyclic group represented by Ar17include a triazinyl group, a pyridyl group, a pyrimidinyl group, a furyl group, a pyrrolyl group, a thienyl group, a quinolyl group, an isoquinolyl group, a benzofuranyl group, a benzothienyl group, an indolyl group, a carbazolyl group, a benzoxazolyl group, a benzothiazolyl group, a quinoxalinyl group, a benzimidazolyl group, a pyrazolyl group, a dibenzofuranyl group, a dibenzothienyl group, a naphthyridinyl group, a phenanthrolinyl group, an acridinyl group, and a carbolinyl group. These groups represented by Ar17may be unsubstituted, but may have a substitution group. Examples of the substitution group include the substitution groups exemplified in the description of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by Ar1to Ar5in the general formula (1). Embodiments that can be adopted by the substitution group are also the same. (R10to R13) R10to R13may be the same or differ, and each represent a hydrogen atom, a deuterium atom, a fluorine atom, a chlorine atom, a cyano group, a trifluoromethyl group, an alkyl group having 1 to 6 carbon atoms, an aromatic hydrocarbon group, an aromatic heterocyclic group, or a fused polycyclic aromatic group. The alkyl group having 1 to 6 carbon atoms may be linear or branched. Specific examples of the alkyl group having 1 to 6 carbon atoms represented by R10to R13include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, a 2-methyl propyl group, a t-butyl group, an n-pentyl group, a 3-methylbutyl group, a tert-pentyl group, an n-hexyl group, an iso-hexyl group, and a tert-hexyl group. Specific examples of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by R10to R13include a phenyl group, a phenyl group, a biphenylyl group, a terphenylyl group, a tetrakisphenyl group, a styryl group, a naphthyl group, an anthracenyl group, an acenaphthenyl group, a phenanthrenyl group, a fluorenyl group, an indenyl group, a pyrenyl group, a perylenyl group, a fluoranthenyl group, a triphenylenyl group, a triazinyl group, a pyridyl group, a pyrimidinyl group, a furyl group, a pyrrolyl group, a thienyl group, a quinolyl group, an isoquinolyl group, a benzofuranyl group, a benzothienyl group, an indolyl group, a carbazolyl group, a benzoxazolyl group, a benzothiazolyl group, a quinoxalinyl group, a benzimidazolyl group, a pyrazolyl group, a dibenzofuranyl group, a dibenzothienyl group, a naphthyridinyl group, a phenanthrolinyl group, an acridinyl group, and a carbolinyl group. These groups represented by R10to R13may be unsubstituted, but may have a substitution group. Examples of the substitution group include the substitution groups exemplified in the description of the aromatic hydrocarbon group, the aromatic heterocyclic group, or the fused polycyclic aromatic group represented by Ar1to Ar5in the general formula (1). Embodiments that can be adopted by the substitution group are also the same. Favorable Embodiment Hereinafter, a favorable embodiment of the pyrimidine derivative IV will be described. However, in the description, the groups to which substituted/unsubstituted are not designated may have a substitution group or may be unsubstituted. The pyrimidine derivative IV favorably has a structure represented by the general formula (4a). Ar14is favorably a phenyl group, a biphenylyl group, a naphthyl group, an anthracenyl group, an acenaphthenyl group, a phenanthrenyl group, a fluorenyl group, an indenyl group, a pyrenyl group, a perylenyl group, a fluoranthenyl group, or a triphenylenyl group, more favorably a phenyl group, a biphenylyl group, a naphthyl group, an anthracenyl group, a phenanthrenyl group, a pyrenyl group, a fluoranthenyl group, or a triphenylenyl group. Here, the phenyl group favorably has a fused polycyclic aromatic group as a substitution group. In this case, the fused polycyclic aromatic group is favorably a naphthyl group, an anthracenyl group, a phenanthrenyl group, a pyrenyl group, a fluoranthenyl group, or a triphenylenyl group. Ar15is favorably a phenyl group having a substitution group. In this case, the substitution group is favorably an aromatic hydrocarbon group such as a phenyl group, a biphenylyl group, and a terphenylyl group; or a fused polycyclic aromatic group such as a naphthyl group, an anthracenyl group, an acenaphthenyl group, a phenanthrenyl group, a fluorenyl group, an indenyl group, a pyrenyl group, a perylenyl group, a fluoranthenyl group, and a triphenylenyl group, and more favorably a phenyl group, a naphthyl group, an anthracenyl group, a phenanthrenyl group, a pyrenyl group, a fluoranthenyl group, or a triphenylenyl group. Ar16is favorably a phenyl group having a substitution group. In this case, the substitution group is favorably an aromatic hydrocarbon group such as a phenyl group, a biphenylyl group, and a terphenylyl group; or a fused polycyclic aromatic group such as a naphthyl group, an anthracenyl group, an acenaphthenyl group, a phenanthrenyl group, a fluorenyl group, an indenyl group, a pyrenyl group, a perylenyl group, a fluoranthenyl group, and a triphenylenyl group, and more favorably a phenyl group, a naphthyl group, an anthracenyl group, a phenanthrenyl group, a pyrenyl group, a fluoranthenyl group, or a triphenylenyl group. It is favorable that Ar14and Ar15are not the same from the viewpoint of stability of the thin film. Here, “the same” represents that not only the skeleton but also the type, number, and position of substitution groups are the same. Therefore, the case where Ar14and Ar15are not the same represents not only a case where the skeleton differs but also a case where the skeleton is the same but the type, number, or position of substitution groups differs. It is favorable that Ar15and Ar16are different groups from the viewpoint of the stability of the thin film. This is because in the case where Ar15and Ar16are the same, there is a possibility that crystallization tends to be facilitated by improvement of the symmetry of the entire molecules One of Ar15and Ar16is favorably a hydrogen atom. Ar17is favorably a nitrogen-containing aromatic heterocyclic group. The nitrogen-containing aromatic heterocyclic group is favorably a triazinyl group, a pyridyl group, a pyrimidinyl group, a pyrrolyl group, a quinolyl group, an isoquinolyl group, an indolyl group, a carbazolyl group, a benzoxazolyl group, a benzothiazolyl group, a quinoxalinyl group, a benzimidazolyl group, a pyrazolyl group, a naphthyridinyl group, a phenanthrolinyl group, an cridinyl group, or a carbolinyl group, more favorably a triazinyl group, a pyridyl group, a pyrimidinyl group, a quinolyl group, an isoquinolyl group, an indolyl group, a quinoxalinyl group, a benzimidazolyl group, a naphthyridinyl group, a phenanthrolinyl group, or a acridinyl group, and particularly favorably a pyridyl group, a pyrimidinyl group, a quinolyl group, an isoquinolyl group, an indolyl group, a quinoxalinyl group, a benzimidazolyl group, a phenanthrolinyl group, or an acridinyl group. The bonding position of Ar17in the benzene ring is favorably at the meta position with respect to the bonding position with the pyrimidine ring from the viewpoint of the stability of the thin film. R10to R13are each favorably a hydrogen atom. Although favorable specific examples of the pyrimidine derivative IV are shown inFIG.11toFIG.28, the pyrimidine derivative IV is not limited to these specific examples. D represents a deuterium atom. In the specific examples, compounds 4-1 to 4-49 and 4-66 to 4-126 correspond to the general formula (4a). Compounds 4-50 to 4-65 correspond to the general formula (4b). The pyrimidine derivative IV itself can be synthesized according to a well-known method (see, for example, Patent document 8). In the electron transport layer 6, a well-known electron transport material may be mixed with or used simultaneously with the pyrimidine derivative IV as long as the effect of the present invention is not impaired. As the well-known electron transport material, metal complexes of quinolinol derivatives including Alq3and BAlq; various metal complexes; triazole derivatives; triazine derivatives, oxadiazole derivatives; pyridine derivatives, pyrimidine derivatives, benzimidazole derivatives; thiadiazole derivatives; anthracene derivatives; carbodiimide derivatives, quinoxaline derivatives; pyridoindole derivatives; phenanthroline derivative; silole derivatives; and the like can be used. <Electron Injection Layer 7> Although alkali metal salts such as a lithium fluoride and a cesium fluoride, alkaline earth metal salts such as magnesium fluoride; metal oxides such as an aluminum oxide; and the like can be used as the electron injection layer 7, this can be omitted in the favorable selection of the electron transport layer and the cathode. <Cathode 8> For the cathode 8, a metal having a low work function, such as aluminum, or an alloy having a lower work function, such as a magnesium silver alloy, a magnesium indium alloy, and an aluminum magnesium alloy, is used as the electrode material. Hereinafter, embodiments of the present invention will be specifically described with reference to examples, but the present invention is not limited to the following examples. Synthesis Example 1: Compound 1-1 Synthesis of 4-bis(biphenyl-4-yl) amino-4′-{(biphenyl-4-yl)-phenylamino}-2-phenyl-biphenyl bis(biphenyl-4-yl)-(6-bromobipbenyl-3-yl) amine10.0g4-{(biphenyl-4-yl)-phenylamino} phenylboronic acid7.9gtetrakistriphenylphosphine palladium (0)0.60gpotassium carbonate5.0gtoluene80mlethanol40mlwater30mlwere added to a reaction vessel that had been purged with nitrogen, heated, and stirred overnight at 100° C. to obtain a reaction solution. The reaction solution was cooled, and an organic layer was collected by a liquid separation operation. The collected organic layer was concentrated to obtain a crude product. The crude product was purified by column chromatography (carrier, silica gel, eluent: dichloromethane/heptane). As a result, 5.30 g (yield of 37%) of white powder of a compound 1-1 was obtained. The structure of the obtained white powder was identified using NMR. The following 44 hydrogen signals were detected by1H-NMR (CDCl3). δ(ppm)=7.65-7.60 (5H) 7.59-7.53 (5H) 7.52-7.40 (9H) 7.39-7.21 (15H) 7.20-7.10 (5H) 7.09-6.91 (5H) Synthesis Example 2: Compound 1-3 Synthesis of 4-{(biphenyl-4-yl)-(4-naphthalene-1-yl-phenyl) amino}-4′-{(biphenyl-4-yl)-phenylamino}-2-phenyl-biphenyl Instead of bis(biphenyl-4-yl)-(6-bromobiphenyl-3-yl) amine in Synthesis Example 1,(biphenyl-4-yl)-(6-bromobiphenyl-3-yl)-(4-naphthalene-1-yl-phenyl) aminewas used and the reaction was carried out under the same conditions. As a result, 9.70 g (yield of 69%) of kind-of-white powder of a compound 1-3 was obtained. The structure of the obtained kind-of-white powder was identified using NMR. The following 46 hydrogen signals were detected by1H-NMR (CDCl3). δ(ppm)=8.07 (1H) 7.93 (1H) 7.87 (1H) 7.67-7.54 (7H) 7.54-7.11 (31H) 7.69-6.92 (5H) Synthesis Example 3: Compound 1-5> Synthesis of 4-{(biphenyl-4-yl)-(p-terphenyl-4-yl) amino}-4′-{(biphenyl-4-yl)-phenylamino}-2-phenyl-biphenyl Instead of bis(biphenyl-4-yl)-(6-bromobiphenyl-3-yl) amine in Synthesis Example 1,(biphenyl-4-yl)-(6-bromophenyl-3-yl)-(p-terphenyl-4-yl) aminewas used and the reaction was carried out under the same conditions. As a result, 6.76 g (yield of 57%) of white powder of a compound 1-5 was obtained. The structure of the obtained white powder was identified using NMR. The following 48 hydrogen signals were detected by1H-NMR (CDCl3). δ(ppm)=7.71-7.10 (43H) 7.08-6.93 (5H) Synthesis Example 4: Compound 1-6> Synthesis of 4-{(biphenyl-4-yl)-phenylamino}-4′-{bis(4-naphthalene-1-yl-phenyl) amino}-2′-phenyl-biphenyl Instead of bis(biphenyl-4-yl)-(6-bromobiphenyl-3-yl) amine in Synthesis Example 1,bis(4-naphthalene-1-yl-phenyl)-(6-bromo-biphenyl-3-yl) aminewas used and the reaction was carried out under the same conditions. As a result, 10.0 g (yield of 73%) of yellow white powder of a compound 1-6 was obtained. The structure of the obtained yellow white powder was identified using NMR. The following 48 hydrogen signals were detected by1H-NMR (CDCl3). δ(ppm)=8.08 (1H) 7.94 (1H) 7.88 (1H) 7.63-7.20 (40H) 7.19-6.92 (5H) Synthesis Example 5: Compound 1-7> Synthesis of 4-{(9,9-dimethylfluorene-2-yl)-(biphenyl-4-yl) amino}-4′-(biphenyl-4-yl-phenylamino)-2-phenyl-biphenyl Instead of bis(biphenyl-4-yl)-(6-bromobiphenyl-3-yl) amine in Synthesis Example 1,(9,9-dimethylfluorene-2-yl)-(biphenyl-4-yl)-(6-bromobiphenyl-3-yl) aminewas used and the reaction was carried out under the same conditions. As a result, 8.30 g (yield of 49%) of white powder of a compound 1-7 was obtained. The structure of the obtained white powder was identified using NMR. The following 48 hydrogen signals were detected by1H-NMR (CDCl3). δ(ppm)=7.72-7.60 (2H) 7.59-7.52 (2H) 7.51-7.10 (35H) 7.09-6.90 (3H) 1.56 (6H) Synthesis Example 6: Compound 1-8> Synthesis of 4-{(9,9-dimethylfluorene-2-yl)-(biphenyl-4-yl)amino}-1-(9-phenyl carbazole-3-yl)-2-phenyl-benzene Instead ofbis(biphenyl-4-yl)-(6-bromobiphenyl-3-yl) amine, and4-{(biphenyl-4-yl)-phenylamino}phenylboronic acid in Synthesis Example 1, (9,9-dimethylfluorene-2-yl)-(biphenyl-4-yl)-(6-bromobiphenyl-3-yl) amine, and(9-phenyl carbazole-3-yl) boronic acidwere used respectively, and the reaction was carried out under the same conditions. As a result, 17.4 g (yield of 85%) of white powder of a compound 1-8 was obtained. The structure of the obtained white powder was identified using NMR. The following 42 hydrogen signals were detected by1H-NMR (CDCl3). δ(ppm)=8.05 (2H) 7.72-7.10 (34H) 1.52 (6H) Synthesis Example 7: Compound 1-4> Synthesis of 4-{4-(naphthalene-2-yl)phenyl}(biphenyl-4-yl) amino4′-{(biphenyl-4-yl)-Phenylamino)}-2-phenyl-1,1′-biphenyl Instead of bis(biphenyl-4-yl)-(6-bromobiphenyl-3-yl) amine in Synthesis Example 1,(6-bromo-1,1′-biphenyl-3-yl)-{4-(naphthalene-2-yl)phenyl}(biphenyl-4-yl) aminewas used, and the reaction was carried out under the same conditions. As a result, 6.1 g (yield of 58%) of white powder of a compound 1-4 was obtained. The structure of the obtained white powder was identified using NMR. The following 46 hydrogen signals were detected by1H-NMR (CDCl3). δ(ppm)=8.07 (1H) 7.95-7.76 (4H) 7.68-6.98 (41H) Synthesis Example 8: Compound 1-19 Synthesis of 4,4″-bis{(biphenyl-4-yl)-phenylamino}-2-phenyl-1,1′:4′,1″-terphenyl Instead of bis(biphenyl-4-yl)-(6-bromobiphenyl-3-yl) amine in Synthesis Example 1,(6-bromo-1,1′-biphenyl-3-yl)-(1,1′-biphenyl-4-yl) phenylaminewas used, and the reaction was carried out under the same conditions. As a result, 12.9 g (yield of 43%) of white powder of a compound 1-19 was obtained. The structure of the obtained white powder was identified using NMR. The following 44 hydrogen signals were detected by1H-NMR (CDCl3). δ(ppm)=7.65-7.61 (4H) 7.57-7.07 (40H) Synthesis Example 9: Compound 1-27> Synthesis of 4,4″-bis{(biphenyl-4-yl)-phenylamino}-2,2″-diphenyl-1,1′:4′,1″-terphenyl 4,4″-bis{(biphenyl-4-yl)-amino}-2,2″-16.3g,diphenyl-1,1′: 4′,1″-terphenyliodobenzene18.6g,copper powder0.29g,potassium carbonate9.61g,3,5-di-tert-butylsalicylic acid1.85g,sodium bisulfite0.47 g, anddodecylbenzene20mlwere added to a reaction vessel that had been purged with nitrogen, heated, and stirred for 17 hours at 200° C. The reaction solution after stirring was cooled, and stirred after adding 1500 ml of toluene, 40 g of silica gel, and 20 g of activated clay thereto. The mixed solution after stirring was concentrated after removing insoluble matters therefrom by filtration. Recrystallization with chlorobenzene was repeated. As a result, 9.65 g (yield of 49%) of white powder of a compound 1-27 was obtained. The structure of the obtained white powder was identified using NMR. The following 48 hydrogen signals were detected by1H-NMR (CDCl3). δ(ppm)=7.62 (4H) 7.52 (4H) 7.45 (4H) 7.36-7.04 (32H) 6.99 (4H) Synthesis Example 10: Compound 1-30> Synthesis of 4,4″-bis{(biphenyl-4-yl)-phenylamino}-2-phenyl-1,1′:3′,1″-terphenyl 4-{(biphenyl-4-yl)-phenylamino}-4″-{(biphenyl-4-yl)-amino}-2-phenyl-1,1′:3′,1″-terphenyl 17.0 g, bromobenzene4.12g,palladium acetate0.13g,50% (w/v) toluene solution of tri-tert-butylphosphine0.33ml,tert-butoxy sodium2.73 g, andtoluene190mlwere added to a reaction vessel that had been purged with nitrogen, heated, and stirred for 3 hours at 80° C. The reaction solution after stirring was cooled, concentrated after removing insoluble matters by filtration, and purified by column chromatography (carrier: silica gel, eluent: toluene/n-hexane). The precipitated solid was collected by adding acetone. As a result, 13.29 g (yield of 71%) of white powder of a compound 1-30 was obtained. The structure of the obtained white powder was identified using NMR. The following 44 hydrogen signals were detected by1H-NMR (CDCl3). δ(ppm)=7.62-7.58 (4H) 7.55-7.49 (4H) 7.48-7.38 (6H) 7.37-7.05 (30H) Synthesis Example 11: Compound 1-41 Synthesis of 4-bis-4-yl) amino 4′-{(biphenyl-4-yl)-phenylamino)}-2,6-diphenyl-biphenyl Instead of bis(biphenyl-4-yl)-(6-bromobiphenyl-3-yl) amine in Synthesis Example 1,4-bis(biphenyl-4-yl) amino-2,6-diphenyl-bromobenzenewas used, and the reaction was carried out under the same conditions. As a result, 12.7 g (yield of 57%) of white powder of a compound 1-41 was obtained. The structure of the obtained white powder was identified using NMR. The following 48 hydrogen signals were detected by1H-NMR (CDCl3). δ(ppm)=7.65-7.53 (8H) 7.48-6.97 (36H) 6.79-6.73 (4H) Synthesis Example 12: Compound 1-14 Synthesis of 4-{(9,9-dimethylfluorene-2-yl)-phenylamino}-4′-(biphenyl-4-yl-phenylamino)-2-phenyl-biphenyl Instead of bis(biphenyl-4-yl)-(6-bromobiphenyl-3-yl) amine in Synthesis Example 1,(9,9-dimethylfluorene-2-yl)-phenyl-(6-bromobiphenyl-3-yl) aminewas used, and the reaction was carried out under the same conditions. As a result, 10.2 g (yield of 69%) of white powder of a compound 1-14 was obtained. The structure of the obtained white powder was identified using NMR. The following 44 hydrogen signals were detected by1H-NMR (CDCl3). δ(ppm)=7.69-7.59 (4H) 7.48-7.42 (4H) 7.37-6.98 (30H) 1.49 (6H) Synthesis Example 13: Compound 1-11> Synthesis of 4-{(9,9-dimethylfluorene-2-yl)-(biphenyl-4-yl) amino}-4′-(diphenylamino)-2-phenyl-biphenyl Instead ofbis(biphenyl-4-yl)-(6-bromobiphenyl-3-yl) amine, and4-{(biphenyl-4-yl)-phenylamino}phenylboronic acid in Synthesis Example 1,(9,9-dimethylfluorene-2-yl)-(biphenyl-4-yl)-(6-bromobiphenyl-3-yl) amine, and 4-(diphenylamino) phenylboronic acidwere used respectively, and the reaction was carried out under the same conditions. As a result, 11.5 g (yield of 75%) of white powder of a compound 1-11 was obtained. The structure of the obtained white powder was identified using NMR. The following 44 hydrogen signals were detected by1H-NMR (CDCl3). δ(ppm)=7.71-7.64 (4H) 7.58-7.56 (2H) 7.49-6.94 (32H) 1.51 (6H) The melting point and glass transition point of each compound obtained in the Synthesis Examples were measured using a high sensitivity scanning calorimeter (DSC3100SA manufactured by Bruker AXS K.K.). MeltingGlass transitionCompoundpoint(° C.)point(° C.)1-1 (Synthesis Example 1)Not observed1181-3 (Synthesis Example 2)Not observed1211-5 (Synthesis Example 3)Not observed1251-6 (Synthesis Example 4)Not observed1251-7 (Synthesis Example 5)Not observed1251-8 (Synthesis Example 6)Not observed1391-4 (Synthesis Example 7)Not observed1211-19 (Synthesis Example 8)Not observed1201-27 (Synthesis Example 9)2631241-30 (Synthesis Example 10)Not observed1171-41 (Synthesis Example 11)2381261-14 (Synthesis Example 12)Not observed1141-11 (Synthesis Example 13)Not observed117 The arylamine compound I had a glass transition point of not less than 100° C., and the thin film state was stabilized. A deposition film having a film thickness of 100 nm was prepared on an ITO substrate by using the compound obtained in each Synthesis Example, and the work function thereof was measured by using an ionization potential measuring apparatus (PYS-202 manufactured by Sumitomo Heavy Industries, Ltd.) CompoundWork function (eV)1-1 (Synthesis Example 1)5.631-3 (Synthesis Example 2)5.621-5 (Synthesis Example 3)5.621-6 (Synthesis Example 4)5.651-7 (Synthesis Example 5)5.571-8 (Synthesis Example 6)5.561-4 (Synthesis Example 7)5.601-19 (Synthesis Example 8)5.701-27 (Synthesis Example 9)5.741-30 (Synthesis Example 10)5.791-41 (Synthesis Example 11)5.671-14 (Synthesis Example 12)5.591-11 (Synthesis Example 13)5.62 The arylamine compound I exhibited a suitable energy level as compared with a work function of a general hole transport material such as NPD and TPD, i.e., 5.4 eV, and had a good hole transport ability. Element Example 1 An ITO electrode was formed as the transparent anode 2 on the glass substrate 1 in advance. As shown inFIG.1, the hole injection layer 3, the hole transport layer 4, the light-emitting layer 5, the electron transport layer 6, the electron injection layer 7, and the cathode (aluminum electrode) 8 were formed by vapor deposition in the stated order on the transparent anode 2 to create an organic EL element. Specifically, the glass substrate 1 on which ITO having a film thickness of 150 nm was formed was ultrasonic-cleaned in isopropyl alcohol for 20 minutes, and then dried for 10 minutes on a hot plate heated to 200° C. After that, UV ozone treatment was performed for 15 minutes. The glass substrate with ITO was mounted in a vacuum vapor deposition machine, and the pressure was reduced to no more than 0.001 Pa. Subsequently, an electron acceptor (Acceptor-1) having the following structural formula and the compound 1-7 in Synthesis Example 5 were binary vapor-deposited, at a deposition rate at which the deposition rate ratio of Acceptor-1 compound 1-7=3:97 was obtained, so as to cover the transparent anode 2 to form the hole injection layer 3 having a film thickness of 30 nm. The compound 1-7 of Synthesis Example 5 was vapor-deposited on the hole injection layer 3 to form the hole transport layer 4 having a film thickness of 40 nm. A compound EMD-1 having the following structural formula and a compound EMH-1 having the following structural formula were binary vapor-deposited on the hole transport layer 4, at a deposition rate at which the deposition rate ratio of EMD-1:EMH-1=5:95 was obtained, to form the light-emitting layer 5 having a film thickness of 20 nm. A compound 4-125 having the following structural formula and a compound ETM-1 having the following structural formula are binary vapor-deposited on the light-emitting layer 5, at a deposition rate at which the deposition rate ratio of 4-125:ETM-1=50:50 was obtained, to form the electron transport layer 6 having a film thickness of 30 nm Lithium fluoride was vapor-deposited on the electron transport layer 6 to form the electron injection layer 7 having a film thickness of 1 nm. Finally, aluminum was vapor-deposited to have a thickness of 100 nm to form the cathode 8. Element Example 2 An organic EL element was prepared under the same conditions except that an amine derivative 3-1 was used instead of the compound EMD-1 as the material of the light-emitting layer 5 in Element Example 1, and the amine derivative 3-1 and the compound EMH-1 were binary vapor-deposited at a deposition rate at which the deposition rate ratio of the amine derivative 3-1:EMH-1=5:95 was obtained. Element Example 3 An organic EL element was prepared under the same conditions except that the compound 1-14 of Synthesis Example 12 was used instead of the compound 1-7 of Synthesis Example 5 as the materials of the hole injection layer 3 and the hole transport layer 4 in Element Example 1. Element Example 4 An organic EL element was prepared under the same conditions except that the compound 1-14 of Synthesis Example 12 was used instead of the compound 1-7 of Synthesis Example 5 as the materials of the hole injection layer 3 and the hole transport layer 4 in Element Example 2. Element Example 5 An organic EL element was prepared under the same conditions except that the compound 1-11 of Synthesis Example 13 was used instead of the compound 1-7 of Synthesis Example 5 as the materials of the hole injection layer 3 and the hole transport layer 4 in Element Example 1. Element Example 5 An organic EL element was prepared under the same conditions except that the compound 1-11 of Synthesis Example 13 was used instead of the compound 1-7 of Synthesis Example 5 as the materials of the hole injection layer 3 and the hole transport layer 4 in Element Example 2. Element Comparative Example 1 An organic EL element was prepared under the same conditions except that HTM-1 having the following structural formula was used instead of the compound 1-7 of Synthesis Example 5 as the materials of the hole injection layer 3 and the hole transport layer 4 in Element Example 1. Element Comparative Example 2 An organic EL element was prepared under the same conditions except that HTM-1 having the above-mentioned structural formula was used instead of the compound 1-7 of Synthesis Example 5 as the materials of the hole injection layer 3 and the hole transport layer 4 in Element Example 1. Properties of the organic EL elements prepared in Element Examples 1 to 6 and Element Comparative Example 1 and 2 were measured at room temperature in the atmosphere. The light-emitting properties of the prepared organic EL element to which DC voltage was applied were measured. The results were shown in Table 1. The element lifetime were measured using the organic EL elements prepared in Element Examples 1 to 6 and Element Comparative Example 1 and 2. Specifically, the time until the light emission luminance was attenuated to 1900 cd/m (corresponding to 95% when the light emission luminance at the start of light emission (initial luminance) is 100%: 95% attenuated) when constant current driving was performed with initial luminance of 2000 cd/m was measured. The results were shown in Table 1. TABLE 1ElementHoleHoleLight-LuminanceLight emissionPower efficiencylifetime [h]injectiontransportemittingVoltage [V][cd/m2]efficiency [cd/A][lm/W]95%layerlayerlayer(@10 mA/cm2)(@10 mA/cm2)(@10 mA/cm2)(@10 mA/cm2)attenuatedElement example 11-7/1-7EMD-1/3.848368.366.84119Acceptor-1EMH-1Element example 23-1/3.879009.007.31140EMH-1Element example 31-14/1-14EMD-1/3.808588.587.09131Acceptor-1EMH-1Element example 43-1/3.829249.247.60155EMH-1Element example 51-11/1-11EMD-1/3.758868.867.44108Acceptor-1EMH-1Eloment example 63-1/3.789439.437.84128EMH-1Element comparativeHTM-1/HTM-1EMD-1/3.827747.746.3754example 1Acceptor-1EMH-1Element comparative3-1/3.878278.276.7178example 2EMH-1 Comparing Element Examples 1, 3, and 5 and Element Comparative Example 1 in which the combination of materials of the light-emitting layer is the same, the light emission efficiency when current having a current density of 10 mA/cm was applied was 7.74 cd/A in Element Comparative Example 1 while the light emission efficiency in Element Examples 1, 3, and 5 was high, i.e., 8.36 to 8.86 cd/A. The power efficiency in Element Comparative Example 1 was 6.37 lm/W while the power efficiency in Element Examples 1, 3, and 5 was high, i.e., 6.84 to 7.441 m/W The element lifetime in Element Comparative Example 1 was 54 hours while the element lifetime in Element Examples 1, 3, and 5 was long, i.e., 108 to 131 hours. Similarly, comparing Element Examples 2, 4, and 6 and Element Comparative Example 2 in which the combination of materials of the light-emitting layer is the same, the light emission efficiency in Element Comparative Example 2 was 8.27 cd/A while the light emission efficiency in Element Examples 2, 4, and 6 was high, i.e., 9.00 to 9.43 cd/A. The power efficiency in Element Comparative Example 2 was 6.71 lm/W while the power efficiency in Element Examples 2, 4, and 6 was high, i.e., 7.31 to 7.84 lm/W. The element lifetime in Element Comparative Example 2 was 78 hours while the element lifetime in Element Examples 2, 4, and 6 was long, i.e., 128 to 155 hours. As is apparent from the above results, in the organic EL element using the arylamine compound I P-doped with an electron acceptor as the material of the hole injection layer, holes can be efficiently injected/transported from the electrode to the hole transport layer. By selecting the arylamine compound I without P-doping as the material of the hole transport layer, carrier balance in the element was improved. Therefore, the organic EL element of the present invention can achieve a high light emission efficiency and a long lifetime as compared with the existing organic EL element. INDUSTRIAL APPLICABILITY As described above, the organic EL element of the present invention exhibits a high light emission efficiency and a high power efficiency, has a low practical drive voltage, and is excellent in durability. Therefore, for example, it is possible to develop it to applications of domestic appliances and lighting.1glass substrate2transparent anode3hole injection layer4hole transport layer5light-emitting layer6electron transport layer7electron injection layer8cathode | 86,677 |
11944005 | DESCRIPTION Organic electroluminescent devices containing one or more light-emitting layers based on organics such as, e.g., organic light emitting diodes (OLEDs), light emitting electrochemical cells (LECs) and light-emitting transistors gain increasing importance. In particular, OLEDs are promising devices for electronic products such as e.g. screens, displays and illumination devices. In contrast to most electroluminescent devices essentially based on inorganics, organic electroluminescent devices based on organics are often rather flexible and producible in particularly thin layers. The OLED-based screens and displays already available today bear particularly beneficial brilliant colors, contrasts and are comparably efficient with respect to their energy consumption. A central element of an organic electroluminescent device for generating light is a light-emitting layer placed between an anode and a cathode. When a voltage (and current) is applied to an organic electroluminescent device, holes and electrons are injected from an anode and a cathode, respectively, to the light-emitting layer. Typically, a hole transport layer is located between light-emitting layer and the anode, and an electron transport layer is located between light-emitting layer and the cathode. The different layers are sequentially disposed. Excitons of high energy are then generated by recombination of the holes and the electrons. The decay of such excited states (e.g., singlet states such as S1 and/or triplet states such as T1) to the ground state (S0) desirably leads to light emission. In order to enable efficient energy transport and emission, an organic electroluminescent device comprises one or more host compounds and one or more emitter compounds as dopants. Challenges when generating organic electroluminescent devices are thus the improvement of the illumination level of the devices (i.e., brightness per current), obtaining a desired light spectrum and achieving suitable (long) lifespans. There is still a need for efficient and stable OLEDs, in particular efficient and stable OLEDs that emit in the blue region of the visible light spectrum, which would be expressed by a small CIEy value. Accordingly, there is still the unmet technical need for organic electroluminescent devices which have a long lifetime and high quantum yields, in particular in the blue range. Exciton-polaron interaction (triplet-polaron and singlet-polaron interaction) as well as exciton-exciton interaction (singlet-singlet, triplet-singlet, and triplet-triplet interaction) are major pathways for device degradation. Degradation pathways such as triplet-triplet annihilation (TTA) and triplet-polaron quenching (TPQ) are of particular interest for blue emitting devices, as high energy states are generated. In particular, charged emitter molecules are prone to high energy excitons and/or polarons. A suitable way to avoid the described degradation pathways and to enable an efficient energy transfer within the emission layer are the so-called “Hyper-” approaches, in which a TADF material is employed to up-convert triplet excitons to singlet excitons, which are then transferred to the emitter, which emits light upon the decay of the singlet excited states to the ground state. As singlet emitters e.g. fluorescence emitters (Hyper-fluorescence), NRCT emitters (Hyper-NRCT) or TADF emitters (Hyper-TADF) can be employed. The efficiencies and lifetimes of OLEDs employing “Hyper-” approaches available in the state of the art are limited due to several factors. To ensure efficient energy transfer, the radiation-free transfer of singlet excitons from the TADF material to the singlet emitter a sufficient, called Förster Resonance Energy Transfer (FRET), has to be realized. The FRET rate strongly depends on the distance between the TADF material and the singlet emitter and the so-called Förster radius. The Förster radius strongly depends on the emission wavelength of the singlet-exciton-donating molecule and decreases with shorter, i.e. blue-shifted, wavelength. A known way to ensure efficient Förster transfer in Hyper-systems is to increase the concentration of either the singlet emitter or the singlet-exciton-donating TADF material (FRET-donor) in the emission layer to increase the probability that a singlet emitter is located within the Förster radius of the singlet-exciton-donating TADF material. Increasing the singlet emitter, in particular the fluorescence or NRCT, concentration leads to π-stacking and/or exciplex formation of the singlet emitter resulting in emission shifting and/or broadening. In addition, with increasing concentration, the charges, in particular holes, are more likely to get trapped on the singlet emitter causing stress and potentially leading to degradation, e.g. hole trapping can lead to undesired direct charge recombination on the emitter acting as a trap. In addition, increasing the singlet emitter concentration leads to losses in efficiency due to quenching. Analogously, increasing the TADF material concentration leads to losses in efficiency due to quenching. In addition, in case of higher concentrations triplet excitons can be transferred from the TADF material to the singlet emitter (Dexter transfer) before these are up-converted to singlet-excitons by the TADF material. Triplet excitons on the singlet emitter may decay without emission or be up-converted via a less efficient mechanism than TADF (e.g. triplet-triplet annihilation, TTA), in case the singlet emitter is a fluorescence emitter, which will result in reduced efficiency. On the other hand, NRCT emitters are more prone to degradation by triplet excitons compared to TADF materials. Surprisingly, it has been found that the organic molecules according to the invention, which combine a thermally activated delayed fluorescence (TADF) material moiety and a NRCT emitter moiety MNRCTin one molecule, exhibit the advantageous effects without the described limitations of the Hyper-NRCT approach. The TADF moiety MTADFand the NRCT emitter moiety MNRCTare bridged via a bridging unit L, which is chosen to enable a sufficient FRET from the TADF moiety to the NRCT emitter moiety MNRCTwhile inhibiting undesired Dexter transfer and, at the same time, leaving both the TADF properties of MTADFand the NRCT properties of MNRCTintact. Consequently, an emission layer comprising the organic molecules according to the invention provides an organic electroluminescent device having good lifetime and quantum yields and exhibiting blue emission. One further advantageous effect of the molecules according to the invention is the reduced number of molecules to be processed during the production of an organic electroluminescent device, such as an OLED display, employing the Hyper-NRCT approach, as both the TADF and the NRCT function are combined in one molecule. In an evaporation process, the number of sources and complexity in the regulation of evaporation rates can thus advantageously be reduced. According to the present invention, the organic molecules preferably exhibit emission maxima in the blue, sky-blue or green spectral range. The organic molecules exhibit in particular emission maxima between 420 nm and 520 nm, preferably between 440 nm and 495 nm, more preferably between 450 nm and 470 nm. The photoluminescence quantum yields of the organic molecules according to the invention are, in particular, 60% or more. The organic light-emitting molecules according to the invention consist of a structure according to Formula A: MTADFrepresents a TADF moiety.MNRCTrepresents a near-range charge transfer (NRCT) emitter moiety.L represents a divalent bridging unit that links MTADFand MNRCTand is linked to MTADFod to MNRCTvi a single bond each. Selection Criteria: Preferably, the combination of TADF moiety MTADFand NRCT emitter moiety MNRCTshould be chosen to meet the following criteria: Equation 1 is met (emission maxima relation): λmax(TADF)<λmax(NRCT) Equation 1 λmax(TADF) represents the emission maximum of the spectrum of a poly(methyl methacrylate) (PMMA) film with 10% by weight of the isolated; i.e. the substituent which represents the binding site of the single bond connecting the TADF moiety MTADFand bridging unit L of MTADFis replaced by a hydrogen (H) substituent; TADF material (MTADF-H). All λmaxare given in nanometers. λmax(NRCT) represents the emission maximum of the spectrum of a PMMA film with 10% by weight of the isolated; i.e. the substituent which represents the binding site of the single bond connecting MNRCTand bridging unit L of MNRCTis replaced by a hydrogen (H) substituent; NRCT material (MNRCT-H). Spectral overlap of TADF emission and NRCT absorption: MTADFand MNRCTare chosen to give a maximum resonance. The resonance between MTADFand MNRCTis represented by the spectral overlap integral: J=∫0∞f(λ)∈(λ)λmax4(TADF)dλ wherein f(λ) is the normalized emission spectrum F(λ) of the isolated TADF material: f(λ)=F(λ)/∫0∞F(λ)dλ ∈(λ) is the molar extinction coefficient of the isolated NRCT material. The Bridging Unit L: The bridging unit L is chosen to enable sufficient FRET between MTADFand MNRCTwhile inhibiting undesired Dexter transfer. The FRET rate depends on the distance between the singlet exciton donor, i.e. MTADF, and the singlet exciton acceptor, i.e. MNRCT, to the inverse of the power of six. The Dexter transfer rate exponentially decays with the distance between the singlet exciton donor, i.e. the TADF moiety MTADF, and the singlet exciton acceptor, i.e. the NRCT emitter moiety. The length of the bridging unit L thus should be chosen to provide a distance between the MTADFand MNRCTthat minimizes the ratio of Dexter transfer rate to FRET rate. In one embodiment of the invention, L comprises or consists of one or more consecutively linked divalent moieties selected from the group consisting ofC6-C60-arylene, which is optionally substituted with one or more substituents RL;C3-C57-heteroarylene, which is optionally substituted with one or more substituents RL;RLSi(RL2);Si(RL2)RL;Si(RL2); andRLSi(RL2)RL;wherein RLis at each occurrence independently from another selected from the group consisting ofPh, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of C1-C4alkyl, C1-C4haloalkyl, CN, CF3and Ph;C1-C4alkyl, C1-C4haloalkyl, CN, CF3or Ph;pyridinyl or pyridinylene, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of C1-C4alkyl, C1-C4haloalkyl, CN, CF3or Ph;pyrimidinyl or pyrimidinylene, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of C1-C4alkyl, C1-C4haloalkyl, CN, CF3and Ph;carbazolyl or carbazolylene, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of C1-C4alkyl, C1-C4haloalkyl, CN, CF3and Ph;triazinyl or triazinylene, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me, C1-C4alkyl, C1-C4haloalkyl, CN, CF3and Ph;andN(Ph)2. In one embodiment of the invention, L is selected from the group consisting ofC6-C60-arylene,which is optionally substituted with one or more substituents RL;C3-C57-heteroarylene, which is optionally substituted with one or more substituents RL;C6-C60-arylene-C3-C57-heteroarylene, which is optionally substituted with one or more substituents RL;C3-C57-heteroarylene-C6-C60-arylene, which is optionally substituted with one or more substituents RL;C6-C60-arylene-C6-C60-arylene, which is optionally substituted with one or more substituents RL;C3-C57-heteroarylene-C3-C57-heteroarylene, which is optionally substituted with one or more substituents RL;C6-C60-arylene-C3-C57-heteroarylene-C6-C60-arylene, which is optionally substituted with one or more substituents RL;C3-C57-heteroarylene-C6-C60-arylene-C3-C57-heteroarylene, which is optionally substituted with one or more substituents RL;C6-C60-arylene-C6-C60-arylene-C6-C60-arylene, which is optionally substituted with one or more substituents RL;C3-C57-heteroarylene-C3-C57-heteroarylene-C3-C57-heteroarylene, which is optionally substituted with one or more substituents RL;RLSi(RL2);Si(RL)RL;Si(RL2); andRLSi(RL2)RL—. In this embodiment, RLis at each occurrence independently from another selected from the group consisting ofMe,iPr,tBu, CN, CF3,Ph, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3and Ph;pyridinyl or pyridinylene, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr, Bu, CN, CF and Ph;pyrimidinyl or pyrimidinylene, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3and Ph;carbazolyl or carbazoylene, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3and Ph;triazinyl or triazinylene, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph;andN(Ph)2. In one embodiment, L is selected from the group consisting of structures of Formula L1 to L46: wherein $ represents the binding site of the single bond linking L and MTADF.§ represents the binding site of the single bond linking L and MNRCT.RLis at each occurrence independently selected from the group consisting of H, deuterium, Me,tBu,iPr, Ph and pyridyl. In a further embodiment, L is selected from the group consisting of structures of Formula L1, L2, L4, L8, L12, L38, L39, L40, L43, L44, L45 or L46: In a further embodiment, RLis at each occurrence independently selected from the group consisting of H, Me,tBu and Ph. The NRCT Emitter Moiety MNRCT: The near-range-charge-transfer (NRCT) emitter moiety MNRCTis derived from a NRCT emitter. According to the invention, a NRCT emitter shows a delayed component in the time-resolved photoluminescence spectrum and exhibits a near-range HOMO-LUMO separation as described by Hatakeyama et al. (Advanced Materials, 2016, 28(14):2777-2781, DOI: 10.1002/adma.201505491). In one embodiment, the NRCT emitter moiety MNRCTis derived from a blue boron containing NRCT emitter. In a preferred embodiment, the NRCT emitter moiety MNRCTis derived from comprises or consists of a poycyclic aromatic compound. In a preferred embodiment, the small FWHM emitter SBcomprises or consists of a polycyclic aromatic compound according to Formula NRCT I or a specific example described in US-A 2015/236274. US-A 2015/236274 also describes examples for synthesis of such compounds. In one embodiment, NRCT emitter moiety MNRCTconsists of a structure according to Formula NRCT I: n is 0 or 1.m=1-n.X1is N or B.X2is N or B.X3is N or B.W, if present, is selected from the group consisting of Si(RNRCT3)2, C(RNRCT3)2and BRNRCT3. Each of R1, R2and RNRCT3is independently from each other selected from the group consisting of:C1-C5-alkyl,which is optionally substituted with one or more substituents RNRCT6;C6-C60-aryl,which is optionally substituted with one or more substituents RNRCT6; andC3-C57-heteroaryl,which is optionally substituted with one or more substituents RNRCT6,wherein at least one of RI, RII, RIII, RIV, RV, RVI, RVII, RVIII, RIX, RX, and RXIis a binding site of a single bond linking the NRCT emitter moiety MNRCTto the bridging unit L;the further residues RI, RII, RIII, RIV, RV, RVI, RIX, RX, and RXIand, as far as present, RVIIand RVIII, are each independently from another selected from the group consisting of:a further binding site of a single bond linking the NRCT emitter moiety MNRCTto the bridging unit L,hydrogen (H),deuterium,N(RNRCT5)2,ORNRCT5,Si(RNRCT5)3,B(ORNRCT5)2,OSO2RNRCT5,CF3,CN,halogen,C1-C40-alkyl,which is optionally substituted with one or more substituents RNRCT5and wherein one CH2-group or more than one non-adjacent CH2-groups are each optionally substituted by RNRCT5C═CRNRCT5, C≡C, Si(RNRCT5)2, Ge(RNRCT5)2, Sn(RNRCT5)2, C═O, C═S, C═Se, C═NRNRCT5, P(═O)(RNRCT5), SO, SO2, RNRCT5, O, S, or CONRNRCT5;C1-C40-alkoxy,which is optionally substituted with one or more substituents RNRCT5and wherein one CH2-group or more than one non-adjacent CH2-groups are each optionally substituted by RNRCT5C═CRNRCT5, C≡C, Si(RNRCT5)2, Ge(RNRCT5)2, Sn(RNRCT5)2, C═O, C═S, C═Se, C═NRNRCT5, P(═O)(RNRCT5), SO, SO2, RNRCT5, O, S, or CONRNRCT5;C1-C40-thioalkoxy,which is optionally substituted with one or more substituents RNRCT5and wherein one CH2-group or more than one non-adjacent CH2-groups are each optionally substituted by RNRCT5C═CRNRCT5, C≡C, Si(RNRCT5)2, Ge(RNRCT5)2, Sn(RNRCT5)2, C═O, C═S, C═Se, C═NRNRCT5, P(═O)(RNRCT5), SO, SO2, RNRCT5, O, S, or CONRNRCT5;C2-C40-alkenyl,which is optionally substituted with one or more substituents RNRCT5and wherein one CH2-group or more than one non-adjacent CH2-groups are each optionally substituted by RNRCT5C═CRNRCT5, C≡C, Si(RNRCT5)2, Ge(RNRCT5)2, Sn(RNRCT5)2, C═O, C═S, C═Se, C═NRNRCT5, P(═O)(RNRCT5), SO, SO2, RNRCT5, O, S, or CONRNRCT5;C2-C40-alkynyl,which is optionally substituted with one or more substituents RNRCT5andwherein one CH2-group or more than one non-adjacent CH2-groups are each optionally substituted by RNRCT5C═CRNRCT5, C≡C, Si(RNRCT5)2, Ge(RNRCT5)2, Sn(RNRCT5)2, C═O, C═S, C═Se, C═NRNRCT5, P(═O)(RNRCT5), SO, SO2, RNRCT5, O, S or CONRNRCT5;C2-C40-aryl,which is optionally substituted with one or more substituents RNRCT5andC3-C57-heteroaryl,which is optionally substituted with one or more substituents RNRCT5. RNRCT5is at each occurrence independently from another selected from the group consisting of: hydrogen, deuterium, OPh, CF3, CN, F,C1-C5-alkyl,wherein optionally one or more hydrogen atoms are independently from each other substituted by deuterium, CN, CF3, or F;C1-C5-alkoxy,wherein optionally one or more hydrogen atoms are independently from each other substituted by deuterium, CN, CF3, or F;C1-C5-thioalkoxy,wherein optionally one or more hydrogen atoms are independently from each other substituted by deuterium, CN, CF3, or F;C2-C5-alkenyl,wherein optionally one or more hydrogen atoms are independently from each other substituted by deuterium, CN, CF3, or F;C2-C5-alkynyl,wherein optionally one or more hydrogen atoms are independently from each other substituted by deuterium, CN, CF3, or F;C6-C18-aryl,which is optionally substituted with one or more C1-C5-alkyl substituents;C3-C17-heteroaryl,which is optionally substituted with one or more C1-C5-alkyl substituents;N(C6-C18-aryl)(C6-C18-aryl),N(C3-C17-heteroaryl)(C3-C17-heteroaryl); andN(C3-C17-heteroaryl)(C6-C18-aryl).RNRCT6is at each occurrence independently from another selected from the group consisting of hydrogen, deuterium, OPh, CF3, CN, F,the binding site of a single bond linking the NRCT emitter moiety MNRCTto the bridging unit L, C1-C5-alkyl,wherein optionally one or more hydrogen atoms are independently from each other substituted by deuterium, CN, CF3, or F;C1-C5-alkoxy,wherein optionally one or more hydrogen atoms are independently from each other substituted by deuterium, CN, CF3, or F;C1-C5-thioalkoxy,wherein optionally one or more hydrogen atoms are independently from each other substituted by deuterium, CN, CF3, or F;C2-C5-alkenyl,wherein optionally one or more hydrogen atoms are independently from each other substituted by deuterium, CN, CF3, or F;C2-C5-alkynyl,wherein optionally one or more hydrogen atoms are independently from each other substituted by deuterium, CN, CF3, or F;C6-C18-aryl,which is optionally substituted with one or more C1-C5-alkyl substituents;C3-C17-heteroaryl,which is optionally substituted with one or more C1-C5-alkyl substituents;N(C6-C18-aryl)(C6-C18-aryl),N(C3-C17-heteroaryl)(C3-C17-heteroaryl); andN(C3-C17-heteroaryl)(C6-C18-aryl). According to this embodiment of the invention, two or more of the substituents selected from the group consisting of R1, R2, RI, RII, RIII, RIV, RV, RVI, RIX, RX, and RXIand, as far as present, RVIIand RVIIIthat are positioned adjacent to another may each form a mono- or polycyclic, (hetero)aliphatic, (hetero)aromatic and/or benzo-fused ring system with another, in particular R1and RXImay form a ring system and/or R2and RIVmay form a ring system (thereby, for example, forming an unsubstituted or substituted carbazolene ring bound to the rest of Formula NRCT I via two single bonds each). According to this embodiment of the invention, at least one of X1, X2and X3is B and at least one of X1, X2and X3is N. According to this embodiment of the invention, exactly one more of the substituents selected from the group consisting of RNRCT6, RI, RII, RIII, RIV, RV, RVI, RIX, RX, and RXIand, as far as present, RVand RVIIIrepresents the binding site of a single bond linking the NRCT emitter moiety MNRCTto the bridging unit L. In a particular embodiment, n=0 and R1and RXImay a ring system and R2and RIVmay form a ring system yielding a structure according to Formula NRCT-Cbz: In one embodiment of the invention, X1and X3each are N and X2is B. In one embodiment of the invention, X1and X3each are B and X2is N. In a further embodiment of the invention, n=0. In one embodiment of the invention, each of RI, RII, RIII, RIV, RV, RVI, RVII, RVIII, RIX, RX, and RXIis independently from another selected from the group consisting of:the binding site of the single bond linking the NRCT emitter moiety MNRCTto the bridging unit L;hydrogen,deuterium,halogen,Me,iPr,tBu,CN,CF3,Ph, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,pyridinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,pyrimidinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,carbazolyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,triazinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,and N(Ph)2; andR1and R2is each independently from each other selected from the group consisting ofC1-C5-alkyl,which is optionally substituted with one or more substituents RNRCT6;C6-C30-aryl,which is optionally substituted with one or more substituents RNRCT6; andC3-C30-heteroaryl,which is optionally substituted with one or more substituents RNRCT6;And wherein the further residues such as RNRCT6are defined as defined in the context of Formula NRCT I. According to this embodiment of the invention, exactly one more of the substituents selected from the group consisting of RNRCT6, RI, RII, RIII, RIV, RV, RVI, RVII, RVIII, RIX, RX, and RXIrepresents the binding site of a single bond linking the NRCT emitter moiety MNRCTto the bridging unit L. In one embodiment of the invention, RIor RIIrepresents the binding site of the single bond linking the NRCT emitter moiety MNRCTto the bridging unit L. In one embodiment of the invention, RIrepresents the binding site of the single bond linking the NRCT emitter moiety MNRCTto the bridging unit L. In one embodiment of the invention, RIIrepresents the binding site of the single bond linking the NRCT emitter moiety MNRCTto the bridging unit L. In one embodiment, the NRCT emitter moiety MNRCTis derived, i.e. hydrogen atom of one of the phenyl-rings in the core structure of the shown boron-containing NRCT emitter (i.e., a phenyl ring binding to B as well as to at least one N) is replaced by the binding site of the single bond linking the NRCT emitter moiety MNRCTto the bridging unit L; from a blue boron-containing NRCT emitter selected from the following group: The person skilled in the art will immediately notice which hydrogen atoms of the phenyl-rings in the core structure of the shown boron-containing NRCT emitter (i.e., a phenyl ring binding to B as well as to at least one N) can be replaced by the binding site of the single bond linking the NRCT emitter moiety MNRCTto the bridging unit L. As one example, a structure can be depicted as follows, when explicitly depicting the hydrogen atoms: Accordingly, in this structure, the NRCT emitter moiety MNRCTmay be derived from a blue boron-containing NRCT emitter, wherein in the structure one of the explicitly shown H-atoms is replaced by the binding site of the single bond linking the NRCT emitter moiety MNRCTto the bridging unit L. In the other structures as depicted above, one of the corresponding hydrogen atoms may be replaced by the binding site of the single bond linking the NRCT emitter moiety MNRCTto the bridging unit L accordingly. In a preferred embodiment, MNRCTis selected from one of the structures according to one of Formulas MNRCT-1 to MNRCT-18: wherein @NRCTrepresents the single bond linking the NRCT emitter moiety MNRCTto the bridging unit L. The TADF Moiety MTADF: The thermally activated delayed fluorescence (TADF) material moiety MTADFis derived from a TADF material. According to the present invention, a TADF material is characterized in that it exhibits a ΔESTvalue, which corresponds to the energy difference between the lowermost excited singlet state (S1) and the lowermost excited triplet state (T1), of less than 0.4 eV, preferably less than 0.3 eV, more preferably less than 0.2 eV, even more preferably less than 0.1 eV or even less than 0.05 eV. In one embodiment of the invention, MTADFconsists ofa first chemical moiety consisting of a structure according to Formula I, andone second chemical moiety consisting of a structure according to Formula II, The first chemical moiety is linked to the second chemical moiety via a single bond. T is selected from the group consisting ofthe binding site of a single bond linking the first chemical moiety to the second chemical moiety, hydrogen (H), deuterium (D), and RTADF1. W is selected from the group consisting ofthe binding site of a single bond linking the first chemical moiety to the second chemical moiety, andH, D, RTADF1, and the binding site of a single bond linking the TADF moiety MTADFto the bridging unit L. Y is selected from the group consisting of H, D, RTADF1, and the binding site of a single bond linking the TADF moiety MTADFto the bridging unit L. Acc1is selected from the group consisting ofCN,CF3,Ph, which is optionally substituted with one or more substituents selected from the group consisting of CN, CF3and F;triazinyl, which is optionally substituted with one or more substituents R6;pyridyl, which is optionally substituted with one or more substituents R6; andpyrimidyl, which is optionally substituted with one or more substituents R6. # represents the binding site of a single bond linking the second chemical moieties to the first chemical moiety. RDiis selected from the group consisting of H, D, Me,iPr,tBu, SiPh3, CN, CF3,Ph, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, and Ph,the binding site of the single bond linking the TADF moiety MTADFto the bridging unit L, and a third chemical moiety consisting of a structure of Formula Q: Q1is selected from the group consisting of N and C—RQI.Q2is selected from the group consisting of N and C—RQIII.Q3is selected from the group consisting of N and C—RQIV.Q4is selected from the group consisting of N and C—RQV.$Qrepresents the binding site of a single bond linking the third chemical moiety to the first chemical moiety.RQIis selected from the group consisting ofH, D, CN, CF3, SiPh3, F, Ph, anda fourth chemical moiety comprising or consisting of a structure of Formula IIQ: §Qrepresents the binding site of a single bond linking the fourth chemical moiety to the third chemical moiety. RQIIis selected from the group consisting ofthe binding site of the single bond linking the TADF moiety MTADFto the bridging unit L,H, D, Me,iPr,tBu, SiPh3, andPh, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr, Bu, and Ph. RQIIIis selected from the group consisting ofthe binding site of the single bond linking the TADF moiety MTADFto the bridging unit L, H, D, CN, CF3, SiPh3, F,Ph, which is optionally substituted with one or more substituents R6;triazinyl, which is optionally substituted with one or more substituents R6;pyridyl, which is optionally substituted with one or more substituents R6; andpyrimidyl, which is optionally substituted with one or more substituents R6; RQIVis selected from the group consisting ofthe binding site of the single bond linking the TADF moiety MTADFto the bridging unit L, H, D, CN, CF3, SiPh3, F,Ph, which is optionally substituted with one or more substituents R6;triazinyl, which is optionally substituted with one or more substituents R6;pyridyl, which is optionally substituted with one or more substituents R6; andpyrimidyl, which is optionally substituted with one or more substituents R6. RQVis selected from the group consisting ofthe binding site of the single bond linking the TADF moiety MTADFto the bridging unit L, H, D, Me,iPr,tBu, SiPh3, andPh, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr, Bu, and Ph. In one embodiment, all of Q1, Q2and Q4are each N, thereby forming a triazine moiety. In another embodiment, two of Q1, Q2and Q4are each N, thereby forming a pyrimidine moiety. In another embodiment, only one of Q1, Q2and Q4are each N, thereby forming a pyridine moiety. In another embodiment, all of Q1, Q2Q3, and Q4, as far as present, are each an optionally substituted carbon atom (C—RQI, C—RQII, C—RQIV, C—RQV), thereby forming a phenyl moiety. According to the invention, in case one RDirepresents the third chemical moiety comprising or consisting of a structure of Formula Q,the other RD is selected from the group consisting of H, D, Me,iPr,tBu, SiPh3,Ph, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr, Bu, and Ph, andthe binding site of the single bond linking the TADF moiety MTADFto the bridging unit L. RTADF1is selected from the group consisting ofMe,iPr,tBu, SiPh3, andPh, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr, Bu, and Ph.Raat each occurrence independently from another selected from the group consisting of hydrogen, deuterium, N(R5)2, OR5, Si(R5)3, B(OR5)2, OSO2R5, CF3, CN, F, Br, I,C1-C40-alkyl,which is optionally substituted with one or more substituents R5andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5C═CR5, C≡C, Si(R5)2, Ge(R5)2, Sn(R5)2, C═O, C═S, C═Se, C═NR5, P(═O)(R5), SO, SO2, NR5, O, S or CONR5;C1-C40-alkoxy,which is optionally substituted with one or more substituents R5andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5C═CR5, C≡C, Si(R5)2, Ge(R5)2, Sn(R5)2, C═O, C═S, C═Se, C═NR5, P(═O)(R5), SO, SO2, NR5, O, S or CONR5;C1-C40-thioalkoxy,which is optionally substituted with one or more substituents R5andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5C═CR5, C≡C, Si(R5)2, Ge(R5)2, Sn(R5)2, C═O, C═S, C═Se, C═NR5, P(═O)(R5), SO, SO2, NR5, O, S or CONR5;C2-C40-alkenyl,which is optionally substituted with one or more substituents R5andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5C═CR5, C≡C, Si(R5)2, Ge(R5)2, Sn(R5)2, C═O, C═S, C═Se, C═NR5, P(═O)(R5), SO, SO2, NR5, O, S or CONR5;C2-C40-alkynyl,which is optionally substituted with one or more substituents R5andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5C═CR5, C≡C, Si(R5)2, Ge(R5)2, Sn(R5)2, C═O, C═S, C═Se, C═NR5, P(═O)(R5), SO, SO2, NR5, O, S or CONR5;C6-C60-aryl,which is optionally substituted with one or more substituents R5; andC3-C57-heteroaryl,which is optionally substituted with one or more substituents R5.R5is at each occurrence independently from another selected from the group consisting of hydrogen, deuterium, N(R6)2, OR6, Si(R6), B(OR6)2, OSO2R6, CF3, CN, F, Br, I,C1-C40-alkyl,which is optionally substituted with one or more substituents R6andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R6C═CR6, C≡C, Si(R6)2, Ge(R6)2, Sn(R6)2, C═O, C═S, C═Se, C═NR6, P(═O)(R6), SO, SO2, NR6, O, S or CONR6;C1-C40-alkoxy,which is optionally substituted with one or more substituents R6andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R6C═CR6, C≡C, Si(R6)2, Ge(R6)2, Sn(R6)2, C═O, C═S, C═Se, C═NR6, P(═O)(R6), SO, SO2, NR6, O, S or CONR6;C1-C40-thioalkoxy,which is optionally substituted with one or more substituents R6andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R6C═CR6, C≡C, Si(R6)2, Ge(R6)2, Sn(R6)2, C═O, C═S, C═Se, C═NR6, P(═O)(R6), SO, SO2, NR6, O, S or CONR6;C2-C40-alkenyl,which is optionally substituted with one or more substituents R6andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R6C═CR6, C≡C, Si(R6)2, Ge(R6)2, Sn(R6)2, C═O, C═S, C═Se, C═NR6, P(═O)(R6), SO, SO2, NR6, O, S or CONR6;C2-C40-alkynyl,which is optionally substituted with one or more substituents R6andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R6C═CR6, C≡C, Si(R6)2, Ge(R6)2, Sn(R6)2, C═O, C═S, C═Se, C═NR6, P(═O)(R6), SO, SO2, NR6, O, S or CONR6;C6-C60-aryl,which is optionally substituted with one or more substituents R; andC3-C57-heteroaryl,which is optionally substituted with one or more substituents R6.R6is at each occurrence independently from another selected from the group consisting of hydrogen, deuterium, OPh, CF3, CN, F,C1-C5-alkyl,wherein optionally one or more hydrogen atoms are independently from each other substituted by deuterium, CN, CF3, or F;C1-C5-alkoxy,wherein optionally one or more hydrogen atoms are independently from each other substituted by deuterium, CN, CF3, or F;C1-C5-thioalkoxy,wherein optionally one or more hydrogen atoms are independently from each other substituted by deuterium, CN, CF3, or F;C2-C5-alkenyl,wherein optionally one or more hydrogen atoms are independently from each other substituted by deuterium, CN, CF3, or F;C2-C5-alkynyl,wherein optionally one or more hydrogen atoms are independently from each other substituted by deuterium, CN, CF3, or F;C6-C18-aryl,which is optionally substituted with one or more C1-C5-alkyl substituents;C3-C17-heteroaryl,which is optionally substituted with one or more C1-C5-alkyl substituents;N(C6-C18-aryl)(C6-C18-aryl);N(C3-C17-heteroaryl)(C3-C17-heteroaryl); andN(C3-C17-heteroaryl)(C6-C18-aryl). According to the invention, two or more of the substituents Raand/or R5independently from each other optionally form a mono- or polycyclic, (hetero)aliphatic, (hetero)aromatic and/or benzo-fused ring system with one or more substituents Raor R5. Rfis at each occurrence independently from another selected from the group consisting of hydrogen, deuterium, N(R5f)2, OR5f, Si(R5f)3, B(OR5f)2, OSO2R5f, CF3, CN, F, Br, I,C1-C40-alkyl,which is optionally substituted with one or more substituents R5fandwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5fC═CR5f, C≡C, Si(R5f)2, Ge(R5f)2, Sn(R5f)2, C═O, C═S, C═Se, C═NR5f, P(═O)(R5f), SO, SO2, NR5f, O, S or CONR5f;C1-C40-alkoxy,which is optionally substituted with one or more substituents R5fandwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5fC═CR5f, C≡C, Si(R5f)2, Ge(R5f)2, Sn(R5f)2, C═O, C═S, C═Se, C═NR5f, P(═O)(R5f), SO, SO2, NR5f, O, S or CONR5f;C1-C40-thioalkoxy,which is optionally substituted with one or more substituents R5fandwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5fC═CR5f, C≡C, Si(R5f)2, Ge(R5f)2, Sn(R5f)2, C═O, C═S, C═Se, C═NR5f, P(═O)(R5f), SO, SO2, NR5f, O, S or CONR5f;C2-C40-alkenyl,which is optionally substituted with one or more substituents R5fandwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5fC═CR5f, C≡C, Si(R5f)2, Ge(R5f)2, Sn(R5f)2, C═O, C═S, C═Se, C═NR5f, P(═O)(R5f), SO, SO2, NR5f, O, S or CONR5f;C2-C40-alkynyl,which is optionally substituted with one or more substituents R5fandwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5fC═CR5f, C≡C, Si(R5f)2, Ge(R5f)2, Sn(R5f)2, C═O, C═S, C═Se, C═NR5f, P(═O)(R5f), SO, SO2, NR5f, O, S or CONR5f;C6-C60-aryl,which is optionally substituted with one or more substituents R5f; andC3-C57-heteroaryl,which is optionally substituted with one or more substituents R5f. R5fis at each occurrence independently from another selected from the group consisting of hydrogen, deuterium, N(R6f)2, OR6f, Si(R6f)3, B(OR6f)2, OSO2R6f, CF3, CN, F, Br, I,C1-C40-alkyl,which is optionally substituted with one or more substituents R6fandwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R6fC═CR6f, C≡C, Si(R6f)2, Ge(R6f)2, Sn(R6f)2, C═O, C═S, C═Se, C═NR6f, P(═O)(R6f), SO, SO2, NR6f, O, S or CONR6f;C1-C40-alkoxy,which is optionally substituted with one or more substituents R6fandwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R6fC═CR6f, C≡C, Si(R6f)2, Ge(R6f)2, Sn(R6f)2, C═O, C═S, C═Se, C═NR6f, P(═O)(R6f), SO, SO2, NR6f, O, S or CONR6f;C1-C40-thioalkoxy,which is optionally substituted with one or more substituents R6fandwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R6fC═CR6f, C≡C, Si(R6f)2, Ge(R6f)2, Sn(R6f)2, C═O, C═S, C═Se, C═NR6f, P(═O)(R6f), SO, SO2, NR6f, O, S or CONR6f;C2-C40-alkenyl,which is optionally substituted with one or more substituents R6fandwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R6fC═CR6f, C≡C, Si(R6f)2, Ge(R6f)2, Sn(R6f)2, C═O, C═S, C═Se, C═NR6f, P(═O)(R6f), SO, SO2, NR6f, O, S or CONR6f;C2-C40-alkynyl,which is optionally substituted with one or more substituents R6fandwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R6fC═CR6f, C≡C, Si(R6f)2, Ge(R6f)2, Sn(R6f)2, C═O, C═S, C═Se, C═NR6f, P(═O)(R6f), SO, SO2, NR6f, O, S or CONR6f;C6-C60-aryl,which is optionally substituted with one or more substituents R6f; andC3-C57-heteroaryl,which is optionally substituted with one or more substituents R6f. R6fis at each occurrence independently from another selected from the group consisting of hydrogen, deuterium, OPh, CF3, CN, F,C1-C5-alkyl,wherein optionally one or more hydrogen atoms are independently from each other substituted by deuterium, CN, CF3, or F;C1-C5-alkoxy,wherein optionally one or more hydrogen atoms are independently from each other substituted by deuterium, CN, CF3, or F;C1-C5-thioalkoxy,wherein optionally one or more hydrogen atoms are independently from each other substituted by deuterium, CN, CF3, or F;C2-C5-alkenyl,wherein optionally one or more hydrogen atoms are independently from each other substituted by deuterium, CN, CF3, or F;C2-C5-alkynyl,wherein optionally one or more hydrogen atoms are independently from each other substituted by deuterium, CN, CF3, or F;C6-C18-aryl,which is optionally substituted with one or more C1-C5-alkyl substituents;C3-C17-heteroaryl,which is optionally substituted with one or more C1-C5-alkyl substituents;N(C6-C18-aryl)(C6-C18-aryl);N(C3-C17-heteroaryl)(C3-C17-heteroaryl); andN(C3-C17-heteroaryl)(C6-C18-aryl). According to the invention, two or more of the substituents Rfand/or R5findependently from each other optionally form a mono- or polycyclic, (hetero)aliphatic, (hetero)aromatic and/or benzo-fused ring system with one or more substituents Rfor R5f. According to the invention, the TADF moiety MTADFcontains exactly one binding site of the single bond linking the TADF moiety MTADFto the bridging unit L. According to the invention, one selected from the group consisting of T, W, and Y represents the binding site of a single bond linking the first chemical moiety and the second chemical moiety. In one embodiment of the invention, Acc1is selected from a structure according to one of Formulas A1 to A23: wherein &Accrepresents the binding site of a single bond linking Acc1to the first chemical moiety. First Chemical Moiety In one embodiment, the first chemical moiety comprises or consists of a structure of Formula Ia: For RDi, T, W and Y the aforementioned definitions apply. Q5is selected from the group consisting of N and C—H. Q is selected from the group consisting of N and C—H. According to this embodiment of the invention, at least one of Q5and Q6is N. According to this embodiment of the invention, exactly one substituent selected from the group consisting of T and W represents the binding site of a single bond linking the first chemical moiety and the second chemical moiety. In one embodiment, T represents the binding site of a single bond linking the first chemical moiety and to the second chemical moiety. In one embodiment, W represents the binding site of a single bond linking the first chemical moiety and to the second chemical moiety. Formula LWo In one embodiment, the first chemical moiety consists of a structure of Formula LWo: For Acc1the aforementioned definition applies. R* is selected from the group consisting of H, D, Me,iPr, Bu, SiPh3, CN, CF3,Ph, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, and Ph, anda third chemical moiety consisting of a structure of Formula Q. @TADFrepresents the binding site of the single bond linking the TADF moiety MTADFto the bridging unit L. W#represents the binding site of a single bond linking the first chemical moiety to the second chemical moiety. In a further embodiment, the first chemical moiety consists of a structure of Formula LWo, andR* represents a third chemical moiety consisting of a structure of Formula Q. In a further embodiment, the first chemical moiety consists of a structure of Formula LWo, andR* represents a third chemical moiety consisting of a structure according to one of Formulas B1 to B9: wherein &* represents the binding site of a single bond linking R* to the first chemical moiety and for Rfthe aforementioned definition applies. In a further embodiment, the first chemical moiety consists of a structure of Formula LWo, andR* represents a third chemical moiety consisting of a structure according to one of Formulas A1* to A23*: wherein &* represents the binding site of a single bond linking R* to the first chemical moiety. In one embodiment, the first chemical moiety consists of a structure of Formula LWo-I: wherein for R*, @TADF, W#, Q5and Q6the aforementioned definitions apply and at least one of Q5and Q6is N. In a further embodiment, the first chemical moiety consists of a structure of Formula LWo-I, and R* represents a third chemical moiety consisting of a structure according to one of Formulas B1 to B9. In a further embodiment, the first chemical moiety consists of a structure of Formula LWo-I, andR* represents a third chemical moiety consisting of a structure according to one of Formulas A1* to A23*: Formula WoL In one embodiment, the first chemical moiety consists of a structure of Formula LWo: For Acc1the aforementioned definition applies. R** represents a third chemical moiety consisting of a structure of Formula Q. @TADFrepresents the binding site of the single bond linking the TADF moiety MTADFto the bridging unit L. W#represents the binding site of a single bond linking the first chemical moiety to the second chemical moiety. In a further embodiment, the first chemical moiety consists of a structure of Formula WoL, andR* represents a third chemical moiety consisting of a structure according to one of Formulas B1* to B9*: wherein &* represents the binding site of a single bond linking R* to the first chemical moiety;@TADFrepresents the binding site of the single bond linking the TADF moiety MTADFto the bridging unit L;and for Rfthe aforementioned definition applies. In one embodiment, the first chemical moiety consists of a structure of Formula WoL-I: wherein for R**, @TADF, W#, Q5and Q6the aforementioned definitions apply and at least one of Q5and Q6is N. In a further embodiment, the first chemical moiety consists of a structure of Formula LWo-I, and R* represents a third chemical moiety consisting of a structure according to one of Formulas B1 to B9. Formula LTp In one embodiment, the first chemical moiety consists of a structure of Formula LTp: For Acc1the aforementioned definition applies. R*** is selected from the group consisting of H, D, Me,iPr, Bu, SiPh3, CN, CF3,Ph, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, and Ph, anda third chemical moiety consisting of a structure of Formula Q. @TADFrepresents the binding site of the single bond linking the TADF moiety MTADFto the bridging unit L. T#represents the binding site of a single bond linking the first chemical moiety to the second chemical moiety. In a further embodiment, the first chemical moiety consists of a structure of Formula LTP, andR*** represents a third chemical moiety consisting of a structure of Formula Q. In a further embodiment, the first chemical moiety consists of a structure of Formula LWo, andR*** represents a third chemical moiety consisting of a structure according to one of Formulas B1** to B9**: wherein &*** represents the binding site of a single bond linking R*** to the first chemical moiety and for Rfthe aforementioned definition applies. In a further embodiment, the first chemical moiety consists of a structure of Formula LWo, andR*** represents a third chemical moiety consisting of a structure according to one of Formulas A1** to A23**: wherein &*** represents the binding site of a single bond linking R*** to the first chemical moiety. In one embodiment, the first chemical moiety consists of a structure of Formula LTP-I: wherein for R***, @TADF, T#, Q5and Q6the aforementioned definitions apply and at least one of Q5and Q6is N. In a further embodiment, the first chemical moiety consists of a structure of Formula LTP-I, and R*** represents a third chemical moiety consisting of a structure according to one of Formulas B1** to B9**: In a further embodiment, the first chemical moiety consists of a structure of Formula LTP-I, andR*** represents a third chemical moiety consisting of a structure according to one of Formulas A1** to A23**. Formula TpL In one embodiment, the first chemical moiety consists of a structure of Formula TpL: For Acc1the aforementioned definition applies. R4* represents a third chemical moiety consisting of a structure of Formula Q. @TADFrepresents the binding site of the single bond linking the TADF moiety MTADFto the bridging unit L. T#represents the binding site of a single bond linking the first chemical moiety to the second chemical moiety. In a further embodiment, the first chemical moiety consists of a structure of Formula TpL, and R4* represents a third chemical moiety consisting of a structure according to one of Formulas B14* to B94*: wherein &4-represents the binding site of a single bond linking R4* to the first chemical moiety@TADFrepresents the binding site of the single bond linking the TADF moiety MTADFto the bridging unit L,and for Rfthe aforementioned definition applies. In one embodiment, the first chemical moiety consists of a structure of Formula TpL-I: wherein for R5*, @TADF, T#, Q5and Q6the aforementioned definitions apply and at least one of Q5and Q6is N. In a further embodiment, the first chemical moiety consists of a structure of Formula TpL-I, and R5* represents a third chemical moiety consisting of a structure according to one of Formulas B14* to B94*. Formula LoT In one embodiment, the first chemical moiety consists of a structure of Formula LoT: For Acc1, @TADF, T#the aforementioned definitions apply. In one embodiment, the first chemical moiety consists of a structure of Formula LoT-I: wherein for @TADF, T#, Q5and Q6the aforementioned definitions apply and at least one of Q5and Q6is N. Formula LmT In one embodiment, the first chemical moiety consists of a structure of Formula LmT: For Acc1, @TADF, T#the aforementioned definitions apply. In one embodiment, the first chemical moiety consists of a structure of Formula LmT-I: wherein for @TADF, T#, Q5and Q6the aforementioned definitions apply and at least one of Q5and Q6is N. Formula LpT In one embodiment, the first chemical moiety consists of a structure of Formula LpT: For Acc1, @TADF, T#the aforementioned definitions apply. In one embodiment, the first chemical moiety consists of a structure of Formula LpT-I: wherein for @TADF, T#, Q5and Q6the aforementioned definitions apply and at least one of Q5and Q6is N. Formula TmL In one embodiment, the first chemical moiety consists of a structure of Formula TmL: For Acc1, @TADF, T#the aforementioned definitions apply. In one embodiment, the first chemical moiety consists of a structure of Formula TmL-I: wherein for @TADF, T#, Q5and Q6the aforementioned definitions apply and at least one of Q5and Q6is N. Formula WoT In one embodiment, the first chemical moiety consists of a structure of Formula WoT: For Acc1, @TADF, W the aforementioned definitions apply. In one embodiment, the first chemical moiety consists of a structure of Formula WoT-I: wherein for @TADF, W, Q5and Q6the aforementioned definitions apply and at least one of Q5and Q6is N. Formula WmL In one embodiment, the first chemical moiety consists of a structure of Formula WmL: For Acc1, @TADF, W the aforementioned definitions apply. In one embodiment, the first chemical moiety consists of a structure of Formula WmL-I: wherein for @TADF, W#, Q5and Q6the aforementioned definitions apply and at least one of Q5and Q6is N. In one embodiment, the first chemical moiety consists of a structure of Formula Iaa: wherein for @TADF, W, Q2and Q4, Q5and Q6the aforementioned definitions apply, at least one of Q2and Q4is N and at least one of Q5and Q6is N. In a preferred embodiment both of Q2and Q4are N, thereby forming a triazine moiety. In a preferred embodiment both of Q5and Q6are N, thereby forming a triazine moiety. In a preferred embodiment all of Q2and Q4, and as far as present, Q1, Q5and/or Q4, are each N, thereby forming one or two or more triazine moieties. In one embodiment, the first chemical moiety consists of a structure of Formula Iab: wherein for @TADF, W, Q2and Q4, Q5and Q6the aforementioned definitions apply, at least one of Q2and Q4is N and at least one of Q5and Q6is N. Second Chemical Moiety In a further embodiment of the invention, the second chemical moiety comprises or consists of a structure of Formula IIb: whereinRbis at each occurrence independently from another selected from the group consisting of hydrogen, deuterium, N(R5)2, OR5, Si(R5)3, B(OR5)2, OSO2R5, CF3, CN, F, Br, I,C1-C40-alkyl,which is optionally substituted with one or more substituents R5andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5C═CR5, C≡C, Si(R5)2, Ge(R5)2, Sn(R5)2, C═O, C═S, C═Se, C═NR5, P(═O)(R5), SO, SO2, NR5, O, S or CONR5;C1-C40-alkoxy,which is optionally substituted with one or more substituents R5andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5C═CR5, C≡C, Si(R5)2, Ge(R5)2, Sn(R5)2, C═O, C═S, C═Se, C═NR5, P(═O)(R5), SO, SO2, NR5, O, S or CONR5;C1-C40-thioalkoxy,which is optionally substituted with one or more substituents R5andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5C═CR5, C≡C, Si(R5)2, Ge(R5)2, Sn(R5)2, C═O, C═S, C═Se, C═NR5, P(═O)(R5), SO, SO2, NR5, O, S or CONR5;C2-C40-alkenyl,which is optionally substituted with one or more substituents R5andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5C═CR5, C≡C, Si(R5)2, Ge(R5)2, Sn(R5)2, C═O, C═S, C═Se, C═NR5, P(═O)(R5), SO, SO2, NR5, O, S or CONR5;C2-C40-alkynyl,which is optionally substituted with one or more substituents R5andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5C═CR5, C≡C, Si(R5)2, Ge(R5)2, Sn(R5)2, C═O, C═S, C═Se, C═NR5, P(═O)(R5), SO, SO2, NR5, O, S or CONR5;C6-C60-aryl,which is optionally substituted with one or more substituents R5; andC3-C57-heteroaryl,which is optionally substituted with one or more substituents R;and wherein apart from the aforementioned definitions apply. In a further embodiment of the invention the second chemical moiety comprises or consists of a structure of formula IIc: whereinRbis at each occurrence independently from another selected from the group consisting of hydrogen, deuterium, N(R5)2, OR5, Si(R5)3, B(OR5)2, OSO2R5, CF3, CN, F, Br, I,C1-C40-alkyl,which is optionally substituted with one or more substituents R5andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5C═CR5, C≡C, Si(R5)2, Ge(R5)2, Sn(R5)2, C═O, C═S, C═Se, C═NR5, P(═O)(R5), SO, SO2, NR5, O, S or CONR5;C1-C40-alkoxy,which is optionally substituted with one or more substituents R5andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5C═CR5, C≡C, Si(R5)2, Ge(R5)2, Sn(R5)2, C═O, C═S, C═Se, C═NR5, P(═O)(R5), SO, SO2, NR5, O, S or CONR5;C1-C40-thioalkoxy,which is optionally substituted with one or more substituents R5andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5C═CR5, C≡C, Si(R5)2, Ge(R5)2, Sn(R5)2, C═O, C═S, C═Se, C═NR5, P(═O)(R5), SO, SO2, NR5, O, S or CONR5;C2-C40-alkenyl,which is optionally substituted with one or more substituents R5andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5C═CR5, C≡C, Si(R5)2, Ge(R5)2, Sn(R5)2, C═O, C═S, C═Se, C═NR5, P(═O)(R5), SO, SO2, NR5, O, S or CONR5;C2-C40-alkynyl,which is optionally substituted with one or more substituents R5andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5C═CR5, C≡C, Si(R5)2, Ge(R5)2, Sn(R5)2, C═O, C═S, C═Se, C═NR5, P(═O)(R5), SO, SO2, NR5, O, S or CONR5;C6-C60-aryl,which is optionally substituted with one or more substituents R5; andC3-C57-heteroaryl,which is optionally substituted with one or more substituents R5;and wherein apart from that the aforementioned definitions apply. In one embodiment of the invention, Rbis at each occurrence independently from another selected from the group consisting ofhydrogen,deuterium,Me,iPr,tBu, CN, CF3,Ph, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3and Ph;pyridinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF and Ph;pyrimidinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr, Bu, CN, CF and Ph;carbazoyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr, Bu, CN, CF3and Ph;triazinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph; andN(Ph)2. In one embodiment, the fourth chemical moiety consisting of a structure of Formula IIQ is identical to the one or two second chemical moieties comprising or consisting of a structure of Formula II. In one embodiment, the fourth chemical moiety consisting of a structure of Formula IIQ is different to the one or two second chemical moieties comprising or consisting of a structure of Formula II. In a further embodiment of the invention, Rais at each occurrence independently from another selected from the group consisting ofhydrogen, Me,iPr,tBu, CN, CF3,Ph, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,pyridinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,pyrimidinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,carbazolyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,triazinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,and N(Ph)2. In a further embodiment of the invention, Rais at each occurrence independently from another selected from the group consisting of hydrogen, Me,iPr,tBu, CN, CF3,Ph, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,pyridinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,pyrimidinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph, andtriazinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph. In a further embodiment of the invention, the second chemical moiety consists of a structure of Formula IIb, a structure of Formula IIb-2, a structure of Formula IIb-3 or a structure of Formula IIb-4: whereinRbis at each occurrence independently from another selected from the group consisting of hydrogen, deuterium, N(R5)2, OR5, Si(R5)3, B(OR5)2, OSO2R5, CF3, CN, F, Br, I,C1-C40-alkyl,which is optionally substituted with one or more substituents R5andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5C═CR5, C≡C, Si(R5)2, Ge(R5)2, Sn(R5)2, C═O, C═S, C═Se, C═NR5, P(═O)(R5), SO, SO2, NR5, O, S or CONR5;C1-C40-alkoxy,which is optionally substituted with one or more substituents R5andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5C═CR5, C≡C, Si(R5)2, Ge(R5)2, Sn(R5)2, C═O, C═S, C═Se, C═NR5, P(═O)(R5), SO, SO2, NR5, O, S or CONR5;C1-C40-thioalkoxy,which is optionally substituted with one or more substituents R5andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5C═CR5, C≡C, Si(R5)2, Ge(R5)2, Sn(R5)2, C═O, C═S, C═Se, C═NR5, P(═O)(R5), SO, SO2, NR5, O, S or CONR5;C2-C40-alkenyl,which is optionally substituted with one or more substituents R5andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5C═CR5, C≡C, Si(R5)2, Ge(R5)2, Sn(R5)2, C═O, C═S, C═Se, C═NR5, P(═O)(R5), SO, SO2, NR5, O, S or CONR5;C2-C40-alkynyl,which is optionally substituted with one or more substituents R5andwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5C═CR5, C≡C, Si(R5)2, Ge(R5)2, Sn(R5)2, C═O, C═S, C═Se, C═NR5, P(═O)(R5), SO, SO2, NR5, O, S or CONR5;C6-C60-aryl,which is optionally substituted with one or more substituents R5; andC3-C57-heteroaryl,which is optionally substituted with one or more substituents R5. For additional variables, the aforementioned definitions apply. In one additional embodiment of the invention, the second chemical moiety consists of a structure of Formula IIc, a structure of Formula IIc-2, a structure of Formula IIc-3 or a structure of Formula IIc-4: wherein the aforementioned definitions apply. In a further embodiment of the invention, Rbis at each occurrence independently from another selected from the group consisting ofMe,iPr,tBu, CN, CF3,Ph, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,pyridinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,pyrimidinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,carbazolyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,triazinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,and N(Ph)2. In a further embodiment of the invention, Rbis at each occurrence independently from another selected from the group consisting ofMe,iPr,tBu, CN, CF3,Ph, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,pyridinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,pyrimidinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr, Bu, CN, CF3, and Ph, andtriazinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph. In the following, examples of the second chemical moiety are shown: For each of the above-given second chemical moieties, the aforementioned definitions apply for #, Z, Ra, and R5. In one embodiment, Raand R5is at each occurrence independently from another selected from the group consisting of hydrogen (H), methyl (Me), i-propyl (CH(CH)2) (Pr), t-butyl (Bu), phenyl (Ph),triazinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph; anddiphenylamine (NPh2). Fourth Chemical Moiety In a further embodiment of the invention, the fourth chemical moiety comprises or consists of a structure of Formula IIq: wherein §Qand Rfare defined as above. In a further embodiment of the invention, Rfis at each occurrence independently from another selected from the group consisting ofhydrogen, Me,iPr,tBu, CN, CF3,Ph, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,pyridinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,pyrimidinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,carbazolyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,triazinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,and N(Ph)2. In a further embodiment of the invention, Rfis at each occurrence independently from another selected from the group consisting ofhydrogen, Me,iPr,tBu, CN, CF3,Ph, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,pyridinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,pyrimidinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph, andtriazinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph. In a further embodiment of the invention, the fourth chemical moiety consists of a structure of Formula IIbq, a structure of Formula IIbq-2, a structure of Formula IIbq-3 or a structure of Formula IIbq-4: whereinRbqis at each occurrence independently from another selected from the group consisting of hydrogen, deuterium, N(R5f)2, OR5f, Si(R5f)3, B(OR5f)2, OSO2R5f, CF3, CN, F, Br, I,C1-C40-alkyl,which is optionally substituted with one or more substituents R5fandwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5fC═CR5f, C≡C, Si(R5f)2, Ge(R5f)2, Sn(R5f)2, C═O, C═S, C═Se, C═NR5f, P(═O)(R5f), SO, SO2, NR5f, O, S or CONR5f;C1-C40-alkoxy,which is optionally substituted with one or more substituents R5fandwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5fC═CR5f, C≡C, Si(R5f)2, Ge(R5f)2, Sn(R5f)2, C═O, C═S, C═Se, C═NR5f, P(═O)(R5f), SO, SO2, NR5f, O, S or CONR5f;C1-C40-thioalkoxy,which is optionally substituted with one or more substituents R5fandwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5fC═CR5f, C≡C, Si(R5f)2, Ge(R5f)2, Sn(R5f)2, C═O, C═S, C═Se, C═NR5f, P(═O)(R5f), SO, SO2, NR5f, O, S or CONR5f;C2-C40-alkenyl,which is optionally substituted with one or more substituents R5fandwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5fC═CR5f, C≡C, Si(R5f)2, Ge(R5f)2, Sn(R5f)2, C═O, C═S, C═Se, C═NR5f, P(═O)(R5f), SO, SO2, NR5f, O, S or CONR5f;C2-C40-alkynyl,which is optionally substituted with one or more substituents R5fandwherein one CH2-group or more than one non-adjacent CH2-groups are optionally substituted by R5fC═CR5f, C≡C, Si(R′)2, Ge(R5f)2, Sn(R5f)2, C═O, C═S, C═Se, C═NR5f, P(═O)(R5f), SO, SO2, NR5f, O, S or CONR5f;C6-C60-aryl,which is optionally substituted with one or more substituents R5f; andC3-C57-heteroaryl,which is optionally substituted with one or more substituents R5f. For additional variables, the aforementioned definitions apply. In one additional embodiment of the invention, the fourth chemical moiety consists of a structure of Formula IIcq, a structure of Formula IIcq-2, a structure of Formula IIcq-3 or a structure of Formula IIcq-4: wherein the aforementioned definitions apply. In a further embodiment of the invention, Rbis at each occurrence independently from another selected from the group consisting of Me,iPr,tBu, CN, CF3,Ph, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,pyridinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,pyrimidinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,carbazolyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,triazinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,and N(Ph)2. In a further embodiment of the invention, Rbis at each occurrence independently from another selected from the group consisting ofMe,iPr,tBu, CN, CF3,Ph, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,pyridinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph,pyrimidinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph, andtriazinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr, Bu, CN, CF3, and Ph. In one embodiment of the invention, Rbqis at each occurrence independently from another selected from the group consisting ofMe,iPr,tBu, Ph, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3and Ph; andtriazinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3and Ph. In the following, exemplary embodiments of the fourth chemical moiety are shown: For $Q, Z$, Rf, and R5fof the fourth chemical moiety shown above, the aforementioned definitions apply. In one embodiment, Rafand R5fis at each occurrence independently from another selected from the group consisting of hydrogen (H), methyl (Me), i-propyl (CH(CH)2) (Pr), t-butyl (Bu), phenyl (Ph),triazinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me,iPr,tBu, CN, CF3, and Ph; anddiphenylamine (NPh2). Examples of the TADF Moiety MTADF In a preferred embodiment, MTADFis selected from one of the structures according to one of Formulas MTADF-1 to MTADF-48: wherein for Raand @TADFthe aforementioned definitions apply. As used throughout the present application, the terms “aryl” and “aromatic” may be understood in the broadest sense as any mono-, bi- or poycyclic aromatic moieties. Accordingly, an aryl group contains 6 to 60 aromatic ring atoms, and a heteroaryl group contains 5 to 60 aromatic ring atoms, of which at least one is a heteroatom. Notwithstanding, throughout the application the number of aromatic ring atoms may be given as subscripted number in the definition of certain substituents. In particular, the heteroaromatic ring includes one to three heteroatoms. Again, the terms “heteroaryl” and “heteroaromatic” may be understood in the broadest sense as any mono-, bi- or polycyclic hetero-aromatic moieties that include at least one heteroatom. The heteroatoms may at each occurrence be the same or different and be individually selected from the group consisting of N, O and S. Accordingly, the term “arylene” refers to a divalent substituent that bears two binding sites to other molecular structures and thereby serving as a linker structure. In case, a group in the exemplary embodiments is defined differently from the definitions given here, for example, the number of aromatic ring atoms or number of heteroatoms differs from the given definition, the definition in the exemplary embodiments is to be applied. According to the invention, a condensed (annulated) aromatic or heteroaromatic polycycle is built of two or more single aromatic or heteroaromatic cycles, which formed the polycycle via a condensation reaction. In particular, as used throughout the present application the term aryl group or heteroaryl group comprises groups which can be bound via any position of the aromatic or heteroaromatic group, derived from benzene, naphthaline, anthracene, phenanthrene, pyrene, dihydropyrene, chrysene, perylene, fluoranthene, benzanthracene, benzphenanthrene, tetracene, pentacene, benzpyrene, furan, benzofuran, isobenzofuran, dibenzofuran, thiophene, benzothiophene, isobenzothiophene, dibenzothiophene; pyrrole, indole, isoindole, carbazole, pyridine, quinoline, isoquinoline, acridine, phenanthridine, benzo-5,6-quinoline, benzo-6,7-quinoline, benzo-7,8-quinoline, phenothiazine, phenoxazine, pyrazole, indazole, imidazole, benzimidazole, naphthoimidazole, phenanthroimidazole, pyridoimidazole, pyrazinoimidazole, quinoxalinoimidazole, oxazole, benzoxazole, napthooxazole, anthroxazol, phenanthroxazol, isoxazole, 1,2-thiazole, 1,3-thiazole, benzothiazole, pyridazine, benzopyridazine, pyrimidine, benzopyrimidine, 1,3,5-trazine, quinoxaline, pyrazine, phenazine, naphthyridine, carboline, benzocarboline, phenanthroline, 1,2,3-trazole, 1,2,4-triazole, benzotriazole, 1,2,3-oxadiazole, 1,2,4-oxadiazole, 1,2,5-oxadiazole, 1,2,3,4-tetrazine, purine, pteridine, indolizine und benzothiadiazole or combinations of the abovementioned groups. As used throughout the present application the term cyclic group may be understood in the broadest sense as any mono-, bi- or polycyclic moieties. As used throughout the present application the term alkyl group may be understood in the broadest sense as any linear, branched, or cyclic alkyl substituent. In particular, the term alkyl comprises the substituents methyl (Me), ethyl (Et), n-propyl (Pr), i-propyl (iPr), cyclopropyl, n-butyl (tBu), i-butyl (tBu), s-butyl (eBu), t-butyl (tBu), cyclobutyl, 2-methylbutyl, n-pentyl, s-pentyl, t-pentyl, 2-pentyl, neo-pentyl, cyclopentyl, n-hexyl, s-hexyl, t-hexyl, 2-hexyl, 3-hexyl, neo-hexyl, cyclohexyl, 1-methylcyclopentyl, 2-methylpentyl, n-heptyl, 2-heptyl, 3-heptyl, 4-heptyl, cycloheptyl, 1-methylcyclohexyl, n-octyl, 2-ethylhexyl, cyclooctyl, 1-bicyclo[2,2,2]octyl, 2-bicyclo[2,2,2]-octyl, 2-(2,6-dimethyl)octyl, 3-(3,7-dimethyl)octyl, adamantyl, 2,2,2-trifluorethyl, 1,1-dimethyl-n-hex-1-yl, 1,1-dimethyl-n-hept-1-yl, 1,1-dimethyl-n-oct-1-yl, 1,1-dimethyl-n-dec-1-yl, 1,1-dimethyl-n-dodec-1-yl, 1,1-dimethyl-n-tetradec-1-yl, 1,1-dimethyl-n-hexadec-1-yl, 1,1-dimethyl-n-octadec-1-yl, 1,1-diethyl-n-hex-1-yl, 1,1-diethyl-n-hept-1-yl, 1,1-diethyl-n-oct-1-yl, 1,1-diethyl-n-dec-1-yl, 1,1-diethyl-n-dodec-1-yl, 1,1-diethyl-n-tetradec-1-yl, 1,1-diethyln-n-hexadec-1-yl, 1,1-diethyl-n-octadec-1-yl, 1-(n-propyl)-cyclohex-1-yl, 1-(n-butyl)-cyclohex-1-yl, 1-(n-hexyl)-cyclohex-1-yl, 1-(n-octyl)-cyclohex-1-yl und 1-(n-decyl)-cyclohex-1-yl. As used throughout the present application the term alkenyl comprises linear, branched, and cyclic alkenyl substituents. The term alkenyl group exemplarily comprises the substituents ethenyl, propenyl, butenyl, pentenyl, cyclopentenyl, hexenyl, cyclohexenyl, heptenyl, cycloheptenyl, octenyl, cyclooctenyl or cyclooctadienyl. As used throughout the present application the term alkynyl comprises linear, branched, and cyclic alkynyl substituents. The term alkynyl group exemplarily comprises ethynyl, propynyl, butynyl, pentynyl, hexynyl, heptynyl or octynyl. As used throughout the present application the term alkoxy comprises linear, branched, and cyclic alkoxy substituents. The term alkoxy group exemplarily comprises methoxy, ethoxy, n-propoxy, i-propoxy, n-butoxy, i-butoxy, s-butoxy, t-butoxy and 2-methylbutoxy. As used throughout the present application the term thioalkoxy comprises linear, branched, and cyclic thioalkoxy substituents, in which the O of the exemplarily alkoxy groups is replaced by S. As used throughout the present application, the terms “halogen” and “halo” may be understood in the broadest sense as being preferably fluorine, chlorine, bromine or iodine. Whenever hydrogen is mentioned herein, it could also be replaced by deuterium at each occurrence. It is understood that when a molecular fragment is described as being a substituent or otherwise attached to another moiety, its name may be written as if it were a fragment (e.g. naphtyl, dibenzofuryl) or as if it were the whole molecule (e.g. naphthalene, dibenzofuran). As used herein, these different ways of designating a substituent or attached fragment are considered to be equivalent. In one embodiment, the organic molecules according to the invention have an excited state lifetime of not more than 150 μs, of not more than 100 μs, in particular of not more than 50 μs, more preferably of not more than 10 μs or not more than 7 μs in a film of poly(methyl methacrylate) (PMMA) with 10% by weight of organic molecule at room temperature. In one embodiment of the invention, the organic molecules according to the invention represent thermally-activated delayed fluorescence (TADF) emitters, which exhibit a ΔESTvalue, which corresponds to the energy difference between the first excited singlet state (S1) and the first excited triplet state (T1), of less than 5000 cm−1, preferably less than 3000 cm−1, more preferably less than 1500 cm−1, even more preferably less than 1000 cm−1or even less than 500 cm−1. In a further embodiment of the invention, the organic molecules according to the invention have an emission peak in the visible or nearest ultraviolet range, i.e., in the range of a wavelength of from 380 to 800 nm, with a full width at half maximum of less than 0.50 eV, preferably less than 0.48 eV, more preferably less than 0.45 eV, even more preferably less than 0.43 eV or even less than 0.40 eV in a film of poly(methyl methacrylate) (PMMA) with 10% by weight of organic molecule at room temperature. In a further embodiment of the invention, the organic molecules according to the invention have a “blue material index” (BMI), calculated by dividing the photoluminescence quantum yield (PLQY) in % by the CIEy color coordinate of the emitted light, of more than 150, in particular more than 200, preferably more than 250, more preferably of more than 300 or even more than 500. In a further embodiment of the invention, the organic molecules according to the invention have a highest occupied molecular orbital with the energy EHOMO, which is higher in energy than −6.2 eV, preferably higher in energy than −6.1 eV and even more preferably higher in energy than −6.0 eV or even −5.9 eV. Orbital and excited state energies can be determined either by means of experimental methods or by calculations employing quantum-chemical methods, in particular density functional theory calculations. The energy of the highest occupied molecular orbital EHOMOis determined by methods known to the person skilled in the art from cyclic voltammetry measurements with an accuracy of 0.1 eV. The energy of the lowest unoccupied molecular orbital ELUMOis determined as the onset of the absorption spectrum. The onset of an absorption spectrum is determined by computing the intersection of the tangent to the absorption spectrum with the x-axis. The tangent to the absorption spectrum is set at the low-energy side of the absorption band and at the point at half maximum of the maximum intensity of the absorption spectrum. The energy of the first excited triplet state T1 is determined from the onset of the emission spectrum at low temperature, typically at 77 K. For host compounds, where the first excited singlet state and the lowest triplet state are energetically separated by >0.4 eV, the phosphorescence is usually visible in a steady-state spectrum in 2-Me-THF. The triplet energy can thus be determined as the onset of the phosphorescence spectrum. For TADF emitter molecules, the energy of the first excited triplet state T1 is determined from the onset of the delayed emission spectrum at 77 K, if not otherwise stated measured in a film of) PMMA with 10% by weight of emitter. Both for host and emitter compounds, the energy of the first excited singlet state S1 is determined from the onset of the emission spectrum, if not otherwise stated measured in a film of PMMA with 10% by weight of host or emitter compound. The onset of an emission spectrum is determined by computing the intersection of the tangent to the emission spectrum with the x-axis. The tangent to the emission spectrum is set at the high-energy side of the emission band, i.e., where the emission band rises by going from higher energy values to lower energy values, and at the point at half maximum of the maximum intensity of the emission spectrum. A further aspect of the invention relates to the use of an organic molecule according to the invention as a luminescent emitter in an optoelectronic device. The optoelectronic device may be understood in the broadest sense as any device based on organic materials that is suitable for emitting light in the visible or nearest ultraviolet (UV) range, i.e., in the range of a wavelength of from 380 to 800 nm. More preferably, the optoelectronic device may be able to emit light in the visible range, i.e., of from 400 to 800 nm. In the context of such use, the optoelectronic device is more particularly selected from the group consisting of:organic light-emitting diodes (OLEDs),light-emitting electrochemical cells,OLED sensors (also: OLED-sensor), especially in gas and vapour sensors not hermetically externally shielded (also non-hermetically shielded gas and vapor sensors),organic diodes,organic solar cells,organic transistors,organic field-effect transistors,organic lasers anddown-conversion elements. In a preferred embodiment in the context of such use, the optoelectronic device is a device selected from the group consisting of an organic light emitting diode (OLED), a light emitting electrochemical cell (LEC), and a light-emitting transistor. In the case of the use, the fraction of the organic molecule according to the invention in the emission layer in an optoelectronic device, more particularly in OLEDs, is 1% to 99% by weight, more particularly 5% to 80% by weight. In an alternative embodiment, the proportion of the organic molecule in the emission layer is 100% by weight. In one embodiment, the light-emitting layer comprises not only the organic molecules according to the invention but also a host material whose triplet (T1) and singlet (S1) energy levels are energetically higher than the triplet (T1) and singlet (S1) energy levels of the organic molecule. Light-Emitting Layer EML In one embodiment, the light-emitting layer EML of an organic light-emitting diode of the invention comprises (or essentially consists of) a composition comprising or consisting of:(i) 1-50% by weight, preferably 5-40% by weight, in particular 10-30% by weight, of one or more organic molecules according to the invention;(ii) 5-99% by weight, preferably 30-94.9% by weight, in particular 40-89% by weight, of at least one host compound H; and(iii) optionally 0-94% by weight, preferably 0.1-65% by weight, in particular 1-50% by weight, of at least one further host compound D with a structure differing from the structure of the molecules according to the invention; and(iv) optionally 0-94% by weight, preferably 0-65% by weight, in particular 0-50% by weight, of a solvent; and(v) optionally 0-30% by weight, in particular 0-20% by weight, preferably 0-5% by weight, of at least one further emitter molecule F with a structure differing from the structure of the molecules according to the invention. Preferably, energy can be transferred from the host compound H to the one or more organic molecules of the invention, in particular transferred from the first excited triplet state T1(H) of the host compound H to the first excited triplet state T1(E) of the one or more organic molecules according to the invention and/or from the first excited singlet state S1(H) of the host compound H to the first excited singlet state S1(E) of the one or more organic molecules according to the invention. In one embodiment, the host compound H has a highest occupied molecular orbital HOMO(H) having an energy EHOMO(H) in the range of from −5 eV to −6.5 eV and one organic molecule according to the invention E has a highest occupied molecular orbital HOMO(E) having an energy EHOMO(E), wherein EHOMO(H)>EHOMO(E). In a further embodiment, the host compound H has a lowest unoccupied molecular orbital LUMO(H) having an energy EHOMO(H) and the one organic molecule according to the invention E has a lowest unoccupied molecular orbital LUMO(E) having an energy EHOMO(E), wherein ELUMO(H)>EHOMO(E). Light-emitting layer EML comprising at least one further host compound D In a further embodiment, the light-emitting layer EML of an organic light-emitting diode of the invention comprises (or essentially consists of) a composition comprising or consisting of:(i) 1-50% by weight, preferably 5-40% by weight, in particular 10-30% by weight, of one organic molecule according to the invention;(ii) 5-99% by weight, preferably 30-94.9% by weight, in particular 40-89% by weight, of one host compound H; and(iii) 0-94% by weight, preferably 0.1-65% by weight, in particular 1-50% by weight, of at least one further host compound D with a structure differing from the structure of the molecules according to the invention; and(iv) optionally 0-94% by weight, preferably 0-65% by weight, in particular 0-50% by weight, of a solvent; and(v) optionally 0-30% by weight, in particular 0-20% by weight, preferably 0-5% by weight, of at least one further emitter molecule F with a structure differing from the structure of the molecules according to the invention. In one embodiment of the organic light-emitting diode of the invention, the host compound H has a highest occupied molecular orbital HOMO(H) having an energy EHOMO(H) in the range of from −5 eV to −6.5 eV and the at least one further host compound D has a highest occupied molecular orbital HOMO(D) having an energy EHOMO(D), wherein EHOMO(H)>EHOMO(D). The relation EHOMO(H)>EHOMO(D) favors an efficient hole transport. In a further embodiment, the host compound H has a lowest unoccupied molecular orbital LUMO(H) having an energy ELUMO(H) and the at least one further host compound D has a lowest unoccupied molecular orbital LUMO(D) having an energy EHOMO(D), wherein EHOMO(H)>EHOMO(D). The relation EHOMO(H)>EHOMO(D) favors an efficient electron transport. In one embodiment of the organic light-emitting diode of the invention, the host compound H has a highest occupied molecular orbital HOMO(H) having an energy EHOMO(H) and a lowest unoccupied molecular orbital LUMO(H) having an energy ELMO(H), andthe at least one further host compound D has a highest occupied molecular orbital HOMO(D) having an energy EHOMO(D) and a lowest unoccupied molecular orbital LUMO(D) having an energy EHOMO(D),the organic molecule E of the invention has a highest occupied molecular orbital HOMO(E) having an energy EHOMO(E) and a lowest unoccupied molecular orbital LUMO(E) having an energy EHOMO(E),whereinEHOMO(H)>EHOMO(D) and the difference between the energy level of the highest occupied molecular orbital HOMO(E) of organic molecule according to the invention (EHOMO(E)) and the energy level of the highest occupied molecular orbital HOMO(H) of the host compound H (EHOMO(H)) is between −0.5 eV and 0.5 eV, more preferably between −0.3 eV and 0.3 eV, even more preferably between −0.2 eV and 0.2 eV or even between −0.1 eV and 0.1 eV; and ELUMO(H)>ELUMO(D) and the difference between the energy level of the lowest unoccupied molecular orbital LUMO(E) of organic molecule according to the invention (EHOMO(E)) and the lowest unoccupied molecular orbital LUMO(D) of the at least one further host compound D (ELUMO(D)) is between −0.5 eV and 0.5 eV, more preferably between −0.3 eV and 0.3 eV, even more preferably between −0.2 eV and 0.2 eV or even between −0.1 eV and 0.1 eV. Optoelectronic Devices In a further aspect, the invention relates to an optoelectronic device comprising an organic molecule or a composition as described herein, more particularly in the form of a device selected from the group consisting of organic light-emitting diode (OLED), light-emitting electrochemical cell, OLED sensor, more particularly gas and vapour sensors not hermetically externally shielded (non-hermetically shielded gas and vapor sensor), organic diode, organic solar cell, organic transistor, organic field-effect transistor, organic laser, and down-conversion element. In a preferred embodiment, the optoelectronic device is a device selected from the group consisting of an organic light emitting diode (OLED), a light emitting electrochemical cell (LEC), and a light-emitting transistor. In one embodiment of the optoelectronic device of the invention, the organic molecule according to the invention is used as emission material in a light-emitting layer EML. In one embodiment of the optoelectronic device of the invention, the light-emitting layer EML consists of the composition according to the invention described herein. When the optoelectronic device is an OLED, it may, for example, exhibit the following layer structure:1. substrate2. anode layer A3. hole injection layer, HIL4. hole transport layer, HTL5. electron blocking layer, EBL6. emitting layer, EML7. hole blocking layer, HBL8. electron transport layer, ETL9. electron injection layer, EIL10. cathode layer,wherein the OLED comprises each layer only optionally, different layers may be merged and the OLED may comprise more than one layer of each layer type defined above. Furthermore, the optoelectronic device may optionally comprise one or more protective layers protecting the device from damaging exposure to harmful species in the environment including, exemplarily moisture, vapor and/or gases. In one embodiment of the invention, the optoelectronic device is an OLED, which exhibits the following inverted layer structure:1. substrate2. cathode layer3. electron injection layer, EIL4. electron transport layer, ETL5. hole blocking layer, HBL6. emitting layer, B7. electron blocking layer, EBL8. hole transport layer, HTL9. hole injection layer, HIL10. anode layer Awherein the OLED with an inverted layer structure comprises each layer only optionally, different layers may be merged and the OLED may comprise more than one layer of each layer types defined above. In one embodiment of the invention, the optoelectronic device is an OLED, which may exhibit stacked architecture. In this architecture, contrary to the typical arrangement, where the OLEDs are placed side by side, the individual units are stacked on top of each other. Blended light may be generated with OLEDs exhibiting a stacked architecture, in particular white light may be generated by stacking blue, green and red OLEDs. Furthermore, the OLED exhibiting a stacked architecture may optionally comprise a charge generation layer (CGL), which is typically located between two OLED subunits and typically consists of a n-doped and p-doped layer with the n-doped layer of one CGL being typically located closer to the anode layer. In one embodiment of the invention, the optoelectronic device is an OLED, which comprises two or more emission layers between anode and cathode. In particular, this so-called tandem OLED comprises three emission layers, wherein one emission layer emits red light, one emission layer emits green light and one emission layer emits blue light, and optionally may comprise further layers such as charge generation layers, blocking or transporting layers between the individual emission layers. In a further embodiment, the emission layers are adjacently stacked. In a further embodiment, the tandem OLED comprises a charge generation layer between each two emission layers. In addition, adjacent emission layers or emission layers separated by a charge generation layer may be merged. The substrate may be formed by any material or composition of materials. Most frequently, glass slides are used as substrates. Alternatively, thin metal layers (e.g., copper, gold, silver or aluminum films) or plastic films or slides may be used. This may allow a higher degree of flexibility. The anode layer A is mostly composed of materials allowing to obtain an (essentially) transparent film. As at least one of both electrodes should be (essentially) transparent in order to allow light emission from the OLED, either the anode layer A or the cathode layer C is transparent. Preferably, the anode layer A comprises a large content or even consists of transparent conductive oxides (TCOs). Such anode layer A may exemplarily comprise indium tin oxide, aluminum zinc oxide, fluorine doped tin oxide, indium zinc oxide, PbO, SnO, zirconium oxide, molybdenum oxide, vanadium oxide, wolfram oxide, graphite, doped Si, doped Ge, doped GaAs, doped polyaniline, doped poypyrrol and/or doped polythiophene. Preferably, the anode layer A (essentially) consists of indium tin oxide (ITO). The roughness of the anode layer A caused by the transparent conductive oxides (TCOs) may be compensated by using a hole injection layer (HIL). Further, the HIL may facilitate the injection of quasi charge carriers (i.e., holes) in that the transport of the quasi charge carriers from the TCO to the hole transport layer (HTL) is facilitated. The hole injection layer (HIL) may comprise poly-3,4-ethylendioxy thiophene (PEDOT), polystyrene sulfonate (PSS), MoO2, V2O5, CuPC or CuI, in particular a mixture of PEDOT and PSS. The hole injection layer (HIL) may also prevent the diffusion of metals from the anode layer A into the hole transport layer (HTL). The HIL may exemplarily comprise PEDOT:PSS (poly-3,4-ethylendioxy thiophene: polystyrene sulfonate), PEDOT (poly-3,4-ethylendioxy thiophene), mMTDATA (4,4′,4″-tris[phenyl(m-tolyl)amino]triphenylamine), Spiro-TAD (2,2,7,7′-tetrakis(n,n-diphenylamino)-9,9′-spirobifluorene), DNTPD (N1,N1′-(biphenyl-4,4′-diyl)bis(N1-phenyl-N4,N4-di-m-tolylbenzene-1,4-diamine), NPB (N,N′-nis-(1-naphthalenyl)-N,N′-bis-phenyl-(1,1′-biphenyl)-4,4′-diamine), NPNPB (N,N′-diphenyl-N,N′-di-[4-(N,N-diphenyl-amino)phenyl]benzidine), MeO-TPD (N,N,N′,N′-tetrakis(4-methoxyphenyl)benzidine), HAT-CN (1,4,5,8,9,11-hexaazatriphenylen-hexacarbonitrle) and/or Spiro-NPD (N,N′-diphenyl-N,N′-bis-(1-naphthyl)-9,9′-spirobifluorene-2,7-diamine). Adjacent to the anode layer A or hole injection layer (HIL) typically a hole transport layer (HTL) is located. Herein, any hole transport compound may be used. Exemplarily, electron-rich heteroaromatic compounds such as triarylamines and/or carbazoles may be used as hole transport compound. The HTL may decrease the energy barrier between the anode layer A and the light-emitting layer EML. The hole transport layer (HTL) may also be an electron blocking layer (EBL). Preferably, hole transport compounds bear comparably high energy levels of their triplet states T1. Exemplarily the hole transport layer (HTL) may comprise a star-shaped heterocycle such as tris(4-carbazoyl-9-ylphenyl)amine (TCTA), poly-TPD (poly(4-butylphenyl-diphenyl-amine)), [alpha]-NPD (poly(4-butylphenyl-diphenyl-amine)), TAPC (4,4′-cyclohexyliden-bis[N,N-bis(4-methylphenyl)benzenamine]), 2-TNATA (4,4′,4″-tris[2-naphthyl(phenyl)amino]triphenylamine), Spiro-TAD, DNTPD, NPB, NPNPB, MeO-TPD, HAT-CN and/or TrisPcz (9,9′-diphenyl-6-(9-phenyl-9H-carbazol-3-yl)-9H,9′H-3,3′-bicarbazole). In addition, the HTL may comprise a p-doped layer, which may be composed of an inorganic or organic dopant in an organic hole-transporting matrix. Transition metal oxides such as vanadium oxide, molybdenum oxide or tungsten oxide may exemplarily be used as inorganic dopant. Tetrafluorotetracyanoquinodimethane (F4-TCNQ), copper-pentafluorobenzoate (Cu(I)pFBz) or transition metal complexes may exemplarily be used as organic dopant. The EBL may, for example, comprise mCP (1,3-bis(carbazol-9-yl)benzene), TCTA, 2-TNATA, mCBP (3,3-di(9H-carbazol-9-yl)biphenyl), SiMCP (3,5-Di(9H-carbazol-9-yl)phenyl]triphenylsilane), DPEPO, tris-Pcz, CzSi (9-(4-tert-Butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole), and/or DCB (N,N′-dicarbazolyl-1,4-dimethylbenzene). Adjacent to the hole transport layer (HTL), the light-emitting layer EML is typically located. The light-emitting layer EML comprises at least one light emitting molecule. Particular, the EML comprises at least one light emitting molecule according to the invention. In one embodiment, the light-emitting layer comprises only the organic molecules according to the invention. Typically, the EML additionally comprises one or more host material. Exemplarily, the host material is selected from CBP (4,4′-Bis-(N-carbazolyl-biphenyl), mCP, mCBP Sif87 (dibenzo[b,d]thiophen-2-yltriphenylsilane), CzSi, SimCP ([3,5-Di(9H-carbazol-9-yl)phenyl]triphenysilane), Sif88 (dibenzo[b,d]thiophen-2-yl)diphenylsilane), DPEPO (bis[2-(diphenylphosphino)phenyl] ether oxide), 9-[3-(dibenzofuran-2-yl)phenyl]-9H-carbazole, 9-[3-(dibenzofuran-2-yl)phenyl]-9H-carbazole, 9-[3-(dibenzothiophen-2-yl)phenyl]-9H-carbazole, 9-[3,5-bis(2-dibenzofuranyl)phenyl]-9H-carbazole, 9-[3,5-bis(2-dibenzothiophenyl)phenyl]-9H-carbazole, T2T (2,4,6-tris(biphenyl-3-yl)-1,3,5-trazine), T3T (2,4,6-tris(triphenyl-3-yl)-1,3,5-trazine) and/or TST (2,4,6-tris(9,9′-spirobifluorene-2-yl)-1,3,5-trazine). The host material typically should be selected to exhibit first triplet (T1) and first singlet (S1) energy levels, which are energetically higher than the first triplet (T1) and first singlet (S1) energy levels of the organic molecule. In one embodiment of the invention, the EML comprises a so-called mixed-host system with at least one hole-dominant host and one electron-dominant host. In a particular embodiment, the EML comprises exactly one light emitting molecule species according to the invention and a mixed-host system comprising T2T as electron-dominant host and a host selected from CBP, mCP, mCBP, 9-[3-(dibenzofuran-2-yl)phenyl]-9H-carbazole, 9-[3-(dibenzofuran-2-yl)phenyl]-9H-carbazole, 9-[3-(dibenzothiophen-2-yl)phenyl]-9H-carbazole, 9-[3,5-bis(2-dibenzofuranyl)phenyl]-9H-carbazole and 9-[3,5-bis(2-dibenzothiophenyl)phenyl]-9H-carbazole as hole-dominant host. In a further embodiment the EML comprises 50-80% by weight, preferably 60-75% by weight of a host selected from CBP, mCP, mCBP, 9-[3-(dibenzofuran-2-yl)phenyl]-9H-carbazole, 9-[3-(dibenzofuran-2-yl)phenyl]-9H-carbazole, 9-[3-(dibenzothiophen-2-yl)phenyl]-9H-carbazole, 9-[3,5-bis(2-dibenzofuranyl)phenyl]-9H-carbazole and 9-[3,5-bis(2-dibenzothiophenyl)phenyl]-9H-carbazole; 10-45% by weight, preferably 15-30% by weight of T2T and 5-40% by weight, preferably 10-30% by weight of light emitting molecule according to the invention. Adjacent to the light-emitting layer EML an electron transport layer (ETL) may be located. Herein, any electron transporter may be used. Exemplarily, compounds poor of electrons such as, e.g., benzimidazoles, pyridines, triazoles, oxadiazoles (e.g., 1,3,4-oxadiazole), phosphinoxides and sulfone, may be used. An electron transporter may also be a star-shaped heterocycle such as 1,3,5-tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl (TPBi). The ETL may comprise NBphen (2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline), Alq3 (Aluminum-tris(8-hydroxyquinoline)), TSPO1 (diphenyl-4-triphenylsilylphenyl-phosphinoxide), BPyTP2 (2,7-di(2,2-bipyridin-5-yl)triphenyle), Sif87 (dibenzo[b,d]thiophen-2-yltriphenylsilane), Sif88 (dibenzo[b,d]thiophen-2-yl)diphenylsilane), BmPyPhB (1,3-bis[3,5-di(pyridin-3-yl)phenyl]benzene) and/or BTB (4,4′-bis-[2-(4,6-diphenyl-1,3,5-triazinyl)]-1,1′-biphenyl). Optionally, the ETL may be doped with materials such as Liq. The electron transport layer (ETL) may also block holes or a holeblocking layer (HBL) is introduced. The HBL may, for example, comprise BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline=Bathocuproine), BAlq (bis(8-hydroxy-2-methylquinoline)-(4-phenylphenoxy)aluminum), NBphen (2,9-bis(naphthalen-2-yl-4,7-diphenyl-1,10-phenanthroline), Alq3 (Aluminum-tris(8-hydroxyquinoline)), TSPO1 (diphenyl-4-triphenylsilylphenyl-phosphinoxide), T2T (2,4,6-tris(biphenyl-3-yl)-1,3,5-triazine), T3T (2,4,6-tris(triphenyl-3-yl)-1,3,5-triazine), TST (2,4,6-tris(9,9′-spirobifluorene-2-yl))-1,3,5-trazine), and/or TCB/TCP (1,3,5-tris(N-carbazolyl)benzol/1,3,5-tris(carbazol)-9-yl) benzene). A cathode layer C may be located adjacent to the electron transport layer (ETL). For example, the cathode layer C may comprise or may consist of a metal (e.g., A, Au, Ag, Pt, Cu, Zn, Ni, Fe, Pb, LiF, Ca, Ba, Mg, In, W, or Pd) or a metal alloy. For practical reasons, the cathode layer may also consist of (essentially) non-transparent metals such as Mg, Ca or A. Alternatively or additionally, the cathode layer C may also comprise graphite and or carbon nanotubes (CNTs). Alternatively, the cathode layer C may also consist of nanoscalic silver wires. An OLED may further, optionally, comprise a protection layer between the electron transport layer (ETL) and the cathode layer C (which may be designated as electron injection layer (EIL)). This layer may comprise lithium fluoride, cesium fluoride, silver, Liq (8-hydroxyquinolinolatolithium), Li2O, BaF2, MgO and/or NaF. Optionally, also the electron transport layer (ETL) and/or a hole blocking layer (HBL) may comprise one or more host compounds. In order to modify the emission spectrum and/or the absorption spectrum of the light-emitting layer EML further, the light-emitting layer EML may further comprise one or more further emitter molecule F. Such an emitter molecule F may be any emitter molecule known in the art. Preferably such an emitter molecule F is a molecule with a structure differing from the structure of the molecules according to the invention. The emitter molecule F may optionally be a TADF emitter. Alternatively, the emitter molecule F may optionally be a fluorescent and/or phosphorescent emitter molecule which is able to shift the emission spectrum and/or the absorption spectrum of the light-emitting layer EML. Exemplarily, the triplet and/or singlet excitons may be transferred from the emitter molecule according to the invention to the emitter molecule F before relaxing to the ground state S0 by emitting light typically red-shifted in comparison to the light emitted by emitter molecule E. Optionally, the emitter molecule F may also provoke two-photon effects (i.e., the absorption of two photons of half the energy of the absorption maximum). Optionally, an optoelectronic device (e.g., an OLED) may exemplarily be an essentially white optoelectronic device. Exemplarily such white optoelectronic device may comprise at least one (deep) blue emitter molecule and one or more emitter molecules emitting green and/or red light. Then, there may also optionally be energy transmittance between two or more molecules as described above. As used herein, if not defined more specifically in the particular context, the designation of the colors of emitted and/or absorbed light is as follows:violet: wavelength range of >380-420 nm;deep blue: wavelength range of >420-480 nm;sky blue: wavelength range of >480-500 nm;green: wavelength range of >500-560 nm;yellow: wavelength range of >560-580 nm;orange: wavelength range of >580-620 nm;red: wavelength range of >620-800 nm. With respect to emitter molecules, such colors refer to the emission maximum. Therefore, exemplarily, a deep blue emitter has an emission maximum in the range of from >420 to 480 nm, a sky-blue emitter has an emission maximum in the range of from >480 to 500 nm, a green emitter has an emission maximum in a range of from >500 to 560 nm, a red emitter has an emission maximum in a range of from >620 to 800 nm. A further embodiment of the present invention relates to an OLED, which emits light with CIEx and CIEy color coordinates close to the CIEx (=0.131) and CEy (=0.046) color coordinates of the primary color blue (CIEx=0.131 and CIEy=0.046) as defined by ITU-R Recommendation BT.2020 (Rec. 2020) and thus is suited for the use in Ultra High Definition (UHD) displays, e.g. UHD-TVs. In this context, the term “close to” refers to the ranges of CIEx and CIEy coordinates provided at the end of this paragraph. In commercial applications, typically top-emitting (top-electrode is transparent) devices are used, whereas test devices as described throughout the present application represent bottom-emitting devices (bottom-electrode and substrate are transparent). The CIEy color coordinate of a blue device can be reduced by up to a factor of two, when changing from a bottom- to a top-emitting device, while the CIEx remains nearly unchanged (Okinaka et al. doi:10.1002/sdtp.10480). Accordingly, a further embodiment of the present invention relates to an OLED, whose emission exhibits a CIEx color coordinate of between 0.02 and 0.30, preferably between 0.03 and 0.25, more preferably between 0.05 and 0.20 or even more preferably between 0.08 and 0.18 or even between 0.10 and 0.15 and/or a CEy color coordinate of between 0.00 and 0.45, preferably between 0.01 and 0.30, more preferably between 0.02 and 0.20 or even more preferably between 0.03 and 0.15 or even between 0.04 and 0.10. A further embodiment of the present invention relates to an OLED, which emits light with CIEx and CIEy color coordinates close to the CIEx (=0.170) and CEy (=0.797) color coordinates of the primary color green (CIEx=0.170 and CIEy=0.797) as defined by ITU-R Recommendation BT.2020 (Rec. 2020) and thus is suited for the use in Ultra High Definition (UHD) displays, e.g. UHD-TVs. In this context, the term “close to” refers to the ranges of CIEx and CIEy coordinates provided at the end of this paragraph. In commercial applications, typically top-emitting (top-electrode is transparent) devices are used, whereas test devices as used throughout the present application represent bottom-emitting devices (bottom-electrode and substrate are transparent). The CIEy color coordinate of a blue device can be reduced by up to a factor of two, when changing from a bottom- to a top-emitting device, while the CIEx remains nearly unchanged (Okinaka et al. doi:10.1002/sdtp.10480). Accordingly, a further aspect of the present invention relates to an OLED, whose emission exhibits a CIEx color coordinate of between 0.06 and 0.34, preferably between 0.07 and 0.29, more preferably between 0.09 and 0.24 or even more preferably between 0.12 and 0.22 or even between 0.14 and 0.19 and/or a CEy color coordinate of between 0.75 and 1.20, preferably between 0.76 and 1.05, more preferably between 0.77 and 0.95 or even more preferably between 0.78 and 0.90 or even between 0.79 and 0.85. A further embodiment of the present invention relates to an OLED, which emits light with CIEx and CIEy color coordinates close to the CIEx (=0.708) and CEy (=0.292) color coordinates of the primary color red (CIEx=0.708 and CIEy=0.292) as defined by ITU-R Recommendation BT.2020 (Rec. 2020) and thus is suited for the use in Ultra High Definition (UHD) displays, e.g. UHD-TVs. In this context, the term “close to” refers to the ranges of CIEx and CIEy coordinates provided at the end of this paragraph. In commercial applications, typically top-emitting (top-electrode is transparent) devices are used, whereas test devices as used throughout the present application represent bottom-emitting devices (bottom-electrode and substrate are transparent). The CIEy color coordinate of a blue device can be reduced by up to a factor of two, when changing from a bottom- to a top-emitting device, while the CIEx remains nearly unchanged (Okinaka et al. doi:10.1002/sdtp.10480). Accordingly, a further aspect of the present invention relates to an OLED, whose emission exhibits a CIEx color coordinate of between 0.60 and 0.88, preferably between 0.61 and 0.83, more preferably between 0.63 and 0.78 or even more preferably between 0.66 and 0.76 or even between 0.68 and 0.73 and/or a CEy color coordinate of between 0.25 and 0.70, preferably between 0.26 and 0.55, more preferably between 0.27 and 0.45 or even more preferably between 0.28 and 0.40 or even between 0.29 and 0.35. Accordingly, a further aspect of the present invention relates to an OLED, which exhibits an external quantum efficiency at 1000 cd/m2of more than 8%, more preferably of more than 10%, more preferably of more than 13%, even more preferably of more than 15% or even more than 20% and/or exhibits an emission maximum between 420 nm and 500 nm, preferably between 430 nm and 490 nm, more preferably between 440 nm and 480 nm, even more preferably between 450 nm and 470 nm and/or exhibits a LT80 value at 500 cd/m2of more than 100 h, preferably more than 200 h, more preferably more than 400 h, even more preferably more than 750 h or even more than 1000 h. The optoelectronic device, in particular the OLED according to the present invention can be produced by any means of vapor deposition and/or liquid processing. Accordingly, at least one layer isprepared by means of a sublimation process,prepared by means of an organic vapor phase deposition process,prepared by means of a carrier gas sublimation process,solution processed or printed. The methods used to produce the optoelectronic device, in particular the OLED according to the present invention are known in the art. The different layers are individually and successively deposited on a suitable substrate by means of subsequent deposition processes. The individual layers may be deposited using the same or differing deposition methods. Vapor deposition processes exemplarily comprise thermal (co)evaporation, chemical vapor deposition and physical vapor deposition. For active matrix OLED display, an AMOLED backplane is used as substrate. The individual layer may be processed from solutions or dispersions employing adequate solvents. Solution deposition process exemplarily comprise spin coating, dip coating and jet printing. Liquid processing may optionally be carried out in an inert atmosphere (e.g., in a nitrogen atmosphere) and the solvent may optionally be completely or partially removed by means known in the state of the art. EXAMPLES General Synthesis Schemes Synthesis of MNRCT-L-MTTADF: MTADF-L-Hal, preferably MTADF-L-Br, (1.0 equivalents), ZO (1.0-1.5 equivalents), Pd(PPh3)4(tetrakis(triphenylphosphine)palladium(0) (CAS:14221-01-3, 0.03 equivalents) and potassium carbonate (3.0 equivalents) are stirred overnight under nitrogen atmosphere in THF/Water (4:1) at 70° C. After cooling down to room temperature (rt), the reaction mixture is extracted with ethyl acetate/brine. The organic phases are collected, the organic solvent is removed and the crude product Z1 is purified by flash chromatography or by recrystallization. For example: Under N2, in a flame-dried three-necked flask Z1′ (1.00 equivalent) is dissolved in dry tert-butylbenzene and the solution is cooled to −30° C. A solution of tert-Butyllithium (tBuLi, 2.5 M in hexanes) (2.2 equivalents) is added dropwise. The resulting mixture is allowed to warm to rt and subsequently heated at 60° C. for 2 h. Subsequently, volatile components are removed under high vacuum using a cooling trap cooled with liquid N2. Afterwards, the residual mixture is cooled to −30° C. BBr3(2.0 equivalents) is added dropwise, the cooling bath removed and the mixture stirred at rt for 30 min. Subsequently, the mixture is cooled to 0° C., followed by dropwise addition of DIPEA (3.0 equivalents). The mixture is allowed to warm to rt, followed by heating at 100° C. for 16 h. After cooling down to rt ethyl acetate is added and the resulting solution poured onto a saturated aqueous solution of KOAc. The precipitated crude product is filtered off, washed with little ethyl acetate and dissolved in toluene. The resulting solution is dried over MgSO4, filtered and concentrated to yield the crude product P1. To obtain another product fraction, the phases of the previously obtained filtrate are separated and the aqueous layer extracted with ethyl acetate. The combined organic layers are washed with brine, dried over MgSO4, filtered and concentrated. Both product fractions are combined and purified by MPLC or recrystallization to yield the desired compound P1 as a solid. An example of an alternative synthetic route is as follows: For example: Alternative Route for Structures of Formulas Formula MNRCT-13 or Formula MNRCT-14; E1 (1 equivalent), E2 (1 equivalent), E3 and anhydrous K3PO4are suspended in dry DMSO under nitrogen atmosphere and heated at 140° C. for 16 h. After cooling to room temperature, the reaction mixture poured into water. The precipitate is filtered off, washed with water and dried. Subsequently, the filter cake is dissolved in dichloromethane and the resulting solution dried over MgSO4. After filtration and evaporation of the solvent, the crude product is purified by recrystallization or MPLC. Under N2, in a flame-dried three-necked flask Z1′ (1.00 equivalent) is dissolved in dry tert-butylbenzene and the solution is cooled to −30° C. A solution of n-Butyllithium (tBuLi, 2.5 M in hexanes) (1.1 equivalents) is added dropwise. The resulting mixture is allowed to warm to rt and subsequently heated at 60° C. for 2 h. Subsequently, volatile components are removed under high vacuum using a cooling trap cooled with liquid N2. Afterwards, the residual mixture is cooled to −30° C. BBr3(2.0 equivalents) is added dropwise, the cooling bath removed and the mixture stirred at rt for 30 min. Subsequently, the mixture is cooled to 0° C., followed by dropwise addition of DIPEA (3.0 equivalents). The mixture is allowed to warm to rt, followed by heating at 100° C. for 16 h. After cooling down to rt ethyl acetate is added and the resulting solution poured onto a saturated aqueous solution of KOAc. The precipitated crude product is filtered off, washed with little ethyl acetate and dissolved in toluene. The resulting solution is dried over MgSO4, filtered and concentrated to yield the crude product P1′. To obtain another product fraction, the phases of the previously obtained filtrate are separated and the aqueous layer extracted with ethyl acetate. The combined organic layers are washed with brine, dried over MgSO4, filtered and concentrated. Both product fractions are combined and purified by MPLC or recrystallization to yield the desired compound P1′ as a solid. P1′ can then be coupled to MTADF-L via a Suzuki-type coupling reaction. This means that P1′ is either reacted with the boronic acid or boronic acid ester (MTADF-L-B(OH)2or MTADF-L-B(OR)2e.g. MTADF-L-BPin; (Pin=O2C2(CH3)4) or is transferred to a boronic acid or boronic acid ester analogous of P1′ via reaction with e.g. Bis(pinacolato)diboron (B2Pin2, CAS: 73183-34-3) and then coupled with MTADF-L-Hal (Hal is either Br or Cl, preferably Br) via a Suzuki-type coupling reaction. Synthesis of MTADF-L-Hal and MTADF-L-(OH)2or MTADF-L-(OR)2 Acc-Br (1.0 equivalents) Chloro-fluoro-phenylboronic ester (1.0-1.5 equivalents), Pd(PPh3)4(tetrakis(triphenylphosphine)palladium(0) (CAS:14221-01-3, 0.10 equivalents) and potassium carbonate (3.0 equivalents) are stirred overnight under nitrogen atmosphere in THF/Water (4:1) at 70° C. After cooling down to room temperature (rt), the reaction mixture is extracted with ethyl acetate/brine. The organic phases are collected, the organic solvent is removed and the crude product ZTADF0 is purified by MPLC or by recrystallization. Acc-Br is preferably chosen from structures of Formulas CI1 to CI23: ZTADF0 (1 equivalent), the corresponding donor molecule D-H (1 equivalent) and tribasic potassium phosphate (3 equivalents) are suspended under nitrogen atmosphere in DMSO and stirred at 120° C. for 12 to 16 hours. Subsequently, the reaction mixture is poured into an excess of water in order to precipitate the product. The precipitate is filtered off, washed with water and dried under vacuum. The crude product is purified by recrystallization or by flash chromatography. The product MTADF1-Hal is obtained as a solid. For the reaction of a nitrogen heterocycle in a nucleophilic aromatic substitution with an aryl halide, preferably an aryl fluoride, typical conditions include the use of a base, such as tribasic potassium phosphate or sodium hydride, for example, in an aprotic polar solvent, such as dimethyl sulfoxide (DMSO) or N,N-dimethylformamide (DMF), for example. In particular, the donor molecule D-H is a 3,6-substituted carbazole (e.g., 3,6-dimethylcarbazole, 3,6-diphenylcarbazole, 3,6-di-tert-butylcarbazole), a 2,7-substituted carbazole (e.g., 2,7-dimethylcarbazole, 2,7-diphenylcarbazole, 2,7-di-tert-butylcarbazole), a 1,8-substituted carbazole (e.g., 1,8-dimethylcarbazole, 1,8-diphenylcarbazole, 1,8-di-tert-butylcarbazole), a 1-substituted carbazole (e.g., 1-methylcarbazole, 1-phenylcarbazole, 1-tert-butylcarbazole), a 2-substituted carbazole (e.g., 2-methylcarbazole, 2-phenylcarbazole, 2-tert-butylcarbazole), or a 3-substituted carbazole (e.g., 3-methylcarbazole, 3-phenylcarbazole, 3-tert-butylcarbazole). MTADF1-Hal (1.0 equivalents), the diboronic ester of the bridging unit, (RO)B-L-B(OR)2(e.g. 1,3-phenyldiboronic acid, bis(pinacol) ester) (1.0-1.5 equivalents), Pd(PPh3)4(tetrakis(triphenylphosphine)palladium(0) (CAS:14221-01-3, 0.10 equivalents) and potassium carbonate (3 equivalents) are stirred overnight under nitrogen atmosphere in THF/Water (4:1) at 70° C. After cooling down to room temperature (RT), the reaction mixture is extracted with ethyl acetate/brine. The organic phases are collected, the organic solvent is removed and the crude product MTADF1-L-B(OR)2is purified by flash chromatography or by recrystallization. For example: Alternative Route: MTADF1B(OR)2(1.0 equivalents), the dihalide of the bridging unit, Hal-L-Hal (e.g. 1,3-dibromophenyl) (1.0-1.5 equivalents), Pd(PPh3)4(tetrakis(triphenylphosphine)palladium(0) (CAS:14221-01-3, 0.10 equivalents) and potassium carbonate (3 equivalents) are stirred overnight under nitrogen atmosphere in THF/Water (4:1) at 70° C. After cooling down to room temperature (RT), the reaction mixture is extracted with ethyl acetate/brine. The organic phases are collected, the organic solvent is removed and the crude product MTADF1-L-Hal is purified by flash chromatography or by recrystallization. For example: To obtain MTADF1-B(OR)2, e.g. MTADF1-BPin, MTADF1-Hal may be reacted with a boron acid ester, e.g. Bis(pinacolato)diboron (B2Pin2, CAS: 73183-34-3), employing known conditions. By choosing the right reaction conditions MTADF1-L-Hal can also be obtained from the reaction of MTADF1-Hal with (RO)2B-L-Hal, e.g. MTADF1-Br with (RO)2B-L-CI, and MTADF1-L-B(OR)2can also be obtained from the reaction of MTADF1-(OR)2with Ha-L-Hal followed by borylation as described above. In case a third chemical moiety consisting of a structure of Formula Q is present in the molecule and MTADF1 is bound via the structure of Formula Q to the bridging unit L, the structure has to be introduced as the dihalide of the structure of Formula Q in reaction with MTADF1B(OR)2or as diboronic ester of the structure of Formula Q in reaction with MTADF1-Hal. Here the previously described conditions apply. For example: Pd(PPh3)4(tetrakis(triphenylphosphine)palladium(0) (CAS:14221-) is used as a Pd catalyst during the Suzuki coupling reactions. Other catalyst alternatives are known in the art ((tris(dibenzylideneacetone)dipalladium(0)) or [1,1′-bis(diphenylphosphino)ferrocene]-palladium (1)dichloride). For example, the ligand may be selected from the group consisting of S-Phos ([2-dicyclohexylphoshino-2′,6′-dimethoxy-1,1′-biphenyl]; or SPhos), X-Phos (2-(dicyclohexylphosphino)-2″,4″,6″-triisopropylbiphenyl; or XPhos), and P(Cy)3(tricyclohexyiphosphine). The salt is, for example, selected from tribasic potassium phosphate and potassium acetate and the solvent can be a pure solvent, such as THF water, toluene or dioxane, or a mixture, such as toluene/dioxane/water or dioxane/toluene. A person of skill in the art can determine which Pd catalyst, ligand, salt and solvent combination will result in high reaction yields. HPLC-MS: HPLC-MS analysis is performed on an HPLC by Agilent (1100 series) with MS-detector (Thermo LTQ XL). Exemplary a typical HPLC method is as follows: a reverse phase column 4.6 mm×150 mm, particle size 3.5 μm from Agilent (ZORBAX Eclipse Plus 95A C18, 4.6×150 mm, 3.5 μm HPLC column) is used in the HPLC. The HPLC-MS measurements are performed at room temperature (rt) following gradients Flow ratetime[ml/min][min]A[%]B[%]C[%]2.504050102.554050102.5251020702.5351020702.535.014050102.540.014050102.541.01405010 using the following solvent mixtures: solvent A:H2O (90%)MeCN (10%)solvent B:H2O (10%)MeCN (90%)solvent C:THF (50%)MeCN (50%) An injection volume of 5 μL from a solution with a concentration of 0.5 mg/mL of the analyte is taken for the measurements. Ionization of the probe is performed using an APCI (atmospheric pressure chemical ionization) source either in positive (APCI+) or negative (APCI−) ionization mode. Cyclic Voltammetry Cyclic voltammograms are measured from solutions having concentration of 10-3 mol/l of the organic molecules in dichloromethane or a suitable solvent and a suitable supporting electrolyte (e.g. 0.1 mol/l of tetrabutylammonium hexafluorophosphate). The measurements are conducted at room temperature under nitrogen atmosphere with a three-electrode assembly (Working and counter electrodes: Pt wire, reference electrode: Pt wire) and calibrated using FeCp2/FeCp2+as internal standard. The HOMO data was corrected using ferrocene as internal standard against SCE. Density Functional Theory Calculation Molecular structures are optimized employing the BP86 functional and the resolution of identity approach (RI). Excitation energies are calculated using the (BP86) optimized structures employing Time-Dependent DFT (TD-DFT) methods. Orbital and excited state energies are calculated with the B3LYP functional. Def2-SVP basis sets (and a m4-grid for numerical integration are used. The Turbomole program package is used for all calculations. Photophysical Measurements Sample pretreatment: Spin-coatingApparatus: Spin150, SPS euro.The sample concentration is 10 mg/ml, dissolved in a suitable solvent.Program: 1) 3 s at 400 U/min; 20 s at 1000 U/min at 1000 Upm/s. 3) 10 s at 4000 U/min at 1000 Upm/s. After coating, the films are tried at 70° C. for 1 min. Photoluminescence spectroscopy and TCSPC (Time-correlated single-photon counting) Steady-state emission spectroscopy is measured by a Horiba Scientific, Modell FluoroMax-4 equipped with a 150 W Xenon-Arc lamp, excitation- and emissions monochromators and a Hamamatsu R928 photomultiplier and a time-correlated single-photon counting option. Emissions and excitation spectra are corrected using standard correction fits. Excited state lifetimes are determined employing the same system using the TCSPC method with FM-2013 equipment and a Horiba Yvon TCSPC hub. Excitation Sources:NanoLED 370 (wavelength: 371 nm, pulse duration: 1.1 ns)NanoLED 290 (wavelength: 294 nm, pulse duration: <1 ns)SpectraLED 310 (wavelength: 314 nm)SpectraLED 355 (wavelength: 355 nm). Data analysis (exponential fit) is done using the software suite DataStation and DAS6 analysis software. The fit is specified using the chi-squared-test. Photoluminescence Quantum Yield Measurements For photoluminescence quantum yield (PLQY) measurements an Absolute PL Quantum Yield Measurement C9920-03G system (Hamamatsu Photonics) is used. Quantum yields and CIE coordinates are determined using the software U6039-05 version 3.6.0. Emission maxima are given in nm, quantum yields Φ in % and CIE coordinates as x,y values. PLQY is determined using the following protocol:1) Quality assurance: Anthracene in ethanol (known concentration) is used as reference2) Excitation wavelength: the absorption maximum of the organic molecule is determined and the molecule is excited using this wavelength3) MeasurementQuantum yields are measured for sample of solutions or films under nitrogen atmosphere. The yield is calculated using the equation: ΦPL=nphoton,emitednphoton,absorbed=∫λhc[Intemittedsample(λ)-Intabsorbedsample(λ)]dλ∫λhc[Intemittedreference(λ)-Intabsorbedreference(λ)]dλwherein nphotondenotes the photon count and Int. the intensity. Production and Characterization of Optoelectronic Devices OLED devices comprising organic molecules according to the invention can be produced via vacuum-deposition methods. If a layer contains more than one compound, the weight-percentage of one or more compounds is given in %. The total weight-percentage values amount to 100%, thus if a value is not given, the fraction of this compound equals to the difference between the given values and 100%. The not fully optimized OLEDs are characterized using standard methods and measuring electroluminescence spectra, the external quantum efficiency (in %) in dependency on the intensity, calculated using the light detected by the photodiode, and the current. The OLED device lifetime is extracted from the change of the luminance during operation at constant current density. The LT50 value corresponds to the time, where the measured luminance decreased to 50% of the initial luminance, analogously LT80 corresponds to the time point, at which the measured luminance decreased to 80% of the initial luminance, LT 95 to the time point, at which the measured luminance decreased to 95% of the initial luminance etc. Accelerated lifetime measurements are performed (e.g. applying increased current densities). Exemplarily LT80 values at 500 cd/m2are determined using the following equation: LT80(500cd2m2)=LT80(L0)(L0500cd2m2)1.6 wherein L0denotes the initial luminance at the applied current density. The values correspond to the average of several pixels (typically two to eight), the standard deviation between these pixels is given. Additional Examples of Organic Molecules of the Invention | 126,837 |
11944006 | DETAILED DESCRIPTION The subject matter of the present disclosure will now be described more fully with reference to exemplary embodiments. The subject matter of the disclosure may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the subject matter of the disclosure to those skilled in the art. Features of embodiments of the present disclosure, and how to achieve them, will become apparent by reference to the embodiments that will be described herein in more detail, together with the accompanying drawings. The subject matter of the present disclosure may, however, be embodied in many different forms and should not be limited to the exemplary embodiments. Hereinafter, embodiments are described in more detail by referring to the attached drawings, and in the drawings, like reference numerals denote like elements, and a redundant explanation thereof will not be provided herein. As used herein, the singular forms “a,” “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising” used herein specify the presence of stated features or components, but do not preclude the presence or addition of one or more other features or components. It will be understood that when a layer, region, or component is referred to as being “on” or “onto” another layer, region, or component, it may be directly or indirectly formed on the other layer, region, or component. For example, intervening layers, regions, or components may be present. Sizes of components in the drawings may be exaggerated for convenience of explanation. In other words, since sizes and thicknesses of components in the drawings may be arbitrarily illustrated for convenience of explanation, the following embodiments of the present disclosure are not limited thereto. An organic light-emitting device according to an embodiment may include: a first electrode; a second electrode; an organic layer between the first electrode and the second electrode and including an emission layer, wherein the organic layer may include a diamine compound including a naphthyl-phenyl linker and a 2-carbazolyl group. As used herein, the term “diamine compound” refers to a compound including two amino groups. For example, the diamine compound essentially includes a first amino group and a second amino group. As used herein, the term “naphthyl-phenyl linker” refers to a divalent group having a structure in which a set or arbitrary carbon atom in a naphthalene group is linked to a set or arbitrary carbon atom in a benzene group. For example, the naphthyl-phenyl linker may be represented by Formula 1A, but embodiments of the present disclosure are not limited thereto. The naphthyl-phenyl linker may include other constitutional isomers of Formula 1A: In Formula 1A,indicates a binding site to a nitrogen atom of the first amino group, and *′ indicates a binding site to a nitrogen atom of the second amino group; orindicates a binding site to a nitrogen atom of the second amino group, and *′ indicates a binding site to a nitrogen atom of the first amino group, andany hydrogen or an arbitrary hydrogen in Formula 1A may be substituted with a substituent. As used herein, the term “2-carbazolyl group” refers to a monovalent group in which the second carbon of the carbazole is directly linked to the nitrogen atom of the first amino group or the second amino group of the diamine compound, or linked thereto via an arbitrary divalent group. For example, the 2-carbazolyl group may be represented by Formula 2A: In Formula 2A,indicates a binding site to a nitrogen atom of the diamine compound, andany hydrogen or an arbitrary hydrogen in Formula 2A may be further substituted with a substituent. For example, the diamine compound may include a naphthyl-phenyl linker between two amino groups, and at least one substituent of the two amino groups may be a 2-carbazolyl group. For example, the diamine compound may include a naphthyl-phenyl linker between the first amino group and the second amino group, and at least one substituent of the first amino group and the second amino group may be a 2-carbazolyl group. For example, the first electrode may be an anode, the second electrode may be a cathode, the organic layer may further include a hole transport region between the first electrode and the emission layer, and the hole transport region may include the diamine compound, but embodiments of the present disclosure are not limited thereto. For example, the hole transport region may include at least one of a hole injection layer and a hole transport layer, and at least one of the hole injection layer and hole transport layer may include the diamine compound, but embodiments of the present disclosure are not limited thereto. In one embodiment, the hole transport region may include a p-dopant, and the p-dopant may have a lowest unoccupied molecular orbital (LUMO) energy level of about −3.5 eV or less, but embodiments of the present disclosure are not limited thereto. In one embodiment, the diamine compound may be represented by Formula 1. In one or more embodiments, the diamine compound may be represented by Formula 1, and at least one of R11to R14may be a group represented by Formula 2: For example, in Formula 1, R11may be a group represented by Formula 2;R12may be a group represented by Formula 2;R11and R12may each be a group represented by Formula 2;R11and R14may each be a group represented by Formula 2;R11, R12, and R14may each be a group represented by Formula 2;R11, R12, and R13may each be a group represented by Formula 2; orR11, R12, R13, and R14may each be a group represented by Formula 2, but embodiments of the present disclosure are not limited thereto. In more detail, in Formula 1, R11may be a group represented by Formula 2; or R12may be a group represented by Formula 2, but embodiments of the present disclosure are not limited thereto. In Formula 1, L11to L14may each independently be selected from a single bond, a substituted or unsubstituted C5-C60carbocyclic group, and a substituted or unsubstituted C1-C60heterocyclic group. For example, in Formula 1, L11to L14may each independently be selected from:a single bond, a benzene group, a naphthalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a perylene group, a thiophene group, a furan group, a silole group, a carbazole group, an indole group, an isoindole group, a benzofuran group, a benzothiophene group, a benzosilole group, a dibenzofuran group, a dibenzothiophene group, a benzocarbazole group, a dibenzocarbazole group, and a dibenzosilole group; anda benzene group, a naphthalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a perylene group, a thiophene group, a furan group, a silole group, a carbazole group, an indole group, an isoindole group, a benzofuran group, a benzothiophene group, a benzosilole group, a dibenzofuran group, a dibenzothiophene group, a benzocarbazole group, a dibenzocarbazole group, and a dibenzosilole group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a thiophenyl group, a furanyl group, a silolyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a benzosilolyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, —Si(Q31)(Q32)(Q33), —N(Q31)(Q32), and —B(Q31)(Q32), andQ31to Q33may each independently be selected from a C1-C60alkyl group, a phenyl group, a biphenyl group, and a terphenyl group, but embodiments of the present disclosure are not limited thereto. In one embodiment, in Formula 1, L11to L14may each independently be selected from a single bond and groups represented by Formulae 3-1 to 3-41, but embodiments of the present disclosure are not limited thereto: In Formulae 3-1 to 3-41,X31may be selected from O and S,X32may be selected from O, S, N(R33), and C(R33)(R34),R31to R34may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a thiophenyl group, a furanyl group, a silolyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a benzosilolyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, —Si(Q31)(Q32)(Q33), —N(Q31)(Q32), and —B(Q31)(Q32),Q31to Q33may each independently be selected from a C1-C60alkyl group, a phenyl group, a biphenyl group, and a terphenyl group,b31 may be selected from 1, 2, 3, and 4,b32 may be selected from 1, 2, 3, 4, 5, and 6,b33 may be selected from 1, 2, 3, 4, 5, 6, 7, and 8,b34 may be selected from 1, 2, 3, 4, and 5,b35 may be selected from 1, 2, and 3,b36 may be selected from 1 and 2, andand *′ each indicate a binding site to a neighboring atom. In Formula 1, a11 indicates the repeating number of L11, and may be selected from 0, 1, 2, and 3. Likewise, in Formula 1, a12 to a14 indicate the repeating number of L12to L14, respectively, and a12 to a14 may each independently be selected from 0, 1, 2, and 3. For example, in Formula 1, a11 to a14 may each independently be selected from 0 and 1, but embodiments of the present disclosure are not limited thereto. In Formula 1, R11to R14may each independently be selected from a group represented by Formula 2, a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, wherein at least one selected from R11to R14may be a group represented by Formula 2. For example, in Formula 1, R11to R14may each independently be selected from:a group represented by Formula 2, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentacenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, a silolyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, an indolyl group, an isoindolyl group, an indazolyl group, a purinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a benzoisoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a benzoquinoxalinyl group, a quinazolinyl group, a benzoquinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, a benzosilolyl group, a benzothiazolyl group, a benzoisothiazolyl group, a benzoxazolyl group, a benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, a thiadiazolyl group, an oxadiazolyl group, a triazinyl group, a carbazolyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a dibenzosilolyl group, a benzocarbazolyl group, a naphthobenzofuranyl group, a naphthobenzolhiophenyl group, a naphthobenzosilolyl group, a dibenzocarbazolyl group, a dinaphthofuranyl group, a dinaphthothiophenyl group, a dinaphthosilolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an oxazolopyridinyl group, a thiazolopyridinyl group, a benzonaphthyridinyl group, an azafluorenyl group, an azaspiro-bifluorenyl group, an azacarbazolyl group, an azadibenzofuranyl group, an azadibenzothiophenyl group, an azadibenzosilolyl group, an indenopyrrolyl group, an indolopyrrolyl group, an indenocarbazolyl group, and an indolocarbazolyl group; anda cyclopentyl group, a cyclohexyl group, a cydoheptyl group, a cydopentenyl group, a cydohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentacenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, a silolyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, an indolyl group, an isoindolyl group, an indazolyl group, a purinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a benzoisoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a benzoquinoxalinyl group, a quinazolinyl group, a benzoquinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, a benzosilolyl group, a benzothiazolyl group, a benzoisothiazolyl group, a benzoxazolyl group, a benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, a thiadiazolyl group, an oxadiazolyl group, a triazinyl group, a carbazolyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a dibenzosilolyl group, a benzocarbazolyl group, a naphthobenzofuranyl group, a naphthobenzothiophenyl group, a naphthobenzosilolyl group, a dibenzocarbazolyl group, a dinaphthofuranyl group, a dinaphthothiophenyl group, a dinaphthosilolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an oxazolopyridinyl group, a thiazolopyridinyl group, a benzonaphthyridinyl group, an azafluorenyl group, an azaspiro-bifluorenyl group, an azacarbazolyl group, an azadibenzofuranyl group, an azadibenzothiophenyl group, an azadibenzosilolyl group, an indenopyrrolyl group, an indolopyrrolyl group, an indenocarbazolyl group, and an indolocarbazolyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a cyano group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentacenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, a silolyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, an indolyl group, an isoindolyl group, an indazolyl group, a purinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a benzoisoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a benzoquinoxalinyl group, a quinazolinyl group, a benzoquinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, a benzosilolyl group, a benzothiazolyl group, a benzoisothiazolyl group, a benzoxazolyl group, a benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, a thiadiazolyl group, an oxadiazolyl group, a triazinyl group, a carbazolyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a dibenzosilolyl group, a benzocarbazolyl group, a naphthobenzofuranyl group, a naphthobenzothiophenyl group, a naphthobenzosilolyl group, a dibenzocarbazolyl group, a dinaphthofuranyl group, a dinaphthothiophenyl group, a dinaphthosilolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an oxazolopyridinyl group, a thiazolopyridinyl group, a benzonaphthyridinyl group, an azafluorenyl group, an azaspiro-bifluorenyl group, an azacarbazolyl group, an azadibenzofuranyl group, an azadibenzothiophenyl group, an azadibenzosilolyl group, an indenopyrrolyl group, an indolopyrrolyl group, an indenocarbazolyl group, and an indolocarbazolyl group, wherein at least one selected from R11to R14may be a group represented by Formula 2, but embodiments of the present disclosure are not limited thereto. In one embodiment, in Formula 1, R11to R14may each independently be selected from a group represented by Formula 2 and groups represented by Formulae 5-1 to 5-138, but embodiments of the present disclosure are not limited thereto: In Formulae 5-1 to 5-138,X51may be selected from O, S, N(R51), and C(R51)(R60),X52may be N or C(R52),X53may be N or C(R53),X54may be N or C(R54),X55may be N or C(R55),X56may be N or C(R56),X57may be N or C(R57),X58may be N or C(R58),X59may be N or C(R59),R51to R60may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a thiophenyl group, a furanyl group, a silolyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a benzosilolyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, —Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)(Q31), —S(═O)2(Q31), —P(═O)(Q31)(Q32), and —P(═S)(Q31)(Q32),Q31to Q33may each independently be selected from a C1-C60alkyl group, a phenyl group, a biphenyl group, and a terphenyl group,b51 may be selected from 1, 2, 3, 4, and 5,b52 may be selected from 1, 2, 3, 4, 5, 6, and 7,b53 may be selected from 1, 2, 3, 4, 5, 6, 7, 8, and 9,b54 may be selected from 1, 2, 3, and 4,b55 may be selected from 1, 2, and 3,b56 may be selected from 1 and 2,b57 may be selected from 1, 2, 3, 4, 5, and 6, andindicates a binding site to a neighboring atom. In one embodiment, in Formula 1, R11to R14may each independently be selected from a group represented by Formula 2 and groups represented by Formulae 6-1 to 6-257, but embodiments of the present disclosure are not limited thereto: In Formulae 6-1 to 6-257,“t-Bu” indicates a tert-butyl group,“Ph” indicates a phenyl group,“1-Naph” indicates a 1-naphthyl group,“2-Naph” indicates a 2-naphthyl group, andindicates a binding site to a neighboring atom. In one embodiment, in Formula 1, R11to R14may each independently be selected from a group represented by Formula 2 and groups represented by Formulae 6-1 to 6-110, but embodiments of the present disclosure are not limited thereto. In Formulae 1 and 2, R15, R16, and R21to R23may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a substituted or unsubstituted C1-C60alkyl group, a substituted or unsubstituted C2-C60alkenyl group, a substituted or unsubstituted C2-C60alkynyl group, a substituted or unsubstituted C1-C60alkoxy group, a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted C1-C60heteroaryloxy group, a substituted or unsubstituted C1-C60heteroarylthio group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, —Si(Q1)(Q2)(Q3), —B(Q1)(Q2), —N(Q1)(Q2), —P(Q1)(Q2), —C(═O)(Q1), —S(═O)(Q1), —S(═O)2(Q1), —P(═O)(Q1)(Q2), and —P(═S)(Q1)(Q2), andQ1to Q3may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C1-C60heteroaryl group, a C1-C60heteroaryloxy group, a C1-C60heteroarylthio group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, a C1-C60alkyl group substituted with at least one selected from deuterium, —F, and a cyano group, a C6-C60aryl group substituted with at least one selected from deuterium, —F, and a cyano group, a biphenyl group, and a terphenyl group. For example, in Formulae 1 and 2, R15, R16, and R21to R23may each independently be selected from:hydrogen, deuterium, —F, —Cl, —Br, —I, a cyano group, a C1-C20alkyl group, and a C1-C20alkoxy group;a C1-C20alkyl group and a C1-C20alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a cyano group, a phenyl group, and a biphenyl group;a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentacenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, a silolyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, an indolyl group, an isoindolyl group, an indazolyl group, a purinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a benzoisoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a benzoquinoxalinyl group, a quinazolinyl group, a benzoquinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, a benzosilolyl group, a benzothiazolyl group, a benzoisothiazolyl group, a benzoxazolyl group, a benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, a thiadiazolyl group, an oxadiazolyl group, a triazinyl group, a carbazolyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a dibenzosilolyl group, a benzocarbazolyl group, a naphthobenzofuranyl group, a naphthobenzothiophenyl group, a naphthobenzosilolyl group, a dibenzocarbazolyl group, a dinaphthofuranyl group, a dinaphthothiophenyl group, a dinaphthosilolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an oxazolopyridinyl group, a thiazolopyridinyl group, a benzonaphthyridinyl group, an azafluorenyl group, an azaspiro-bifluorenyl group, an azacarbazolyl group, an azadibenzofuranyl group, an azadibenzothiophenyl group, an azadibenzosilolyl group, an indenopyrrolyl group, an indolopyrrolyl group, an indenocarbazolyl group, and an indolocarbazolyl group;a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentacenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, a silolyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, an indolyl group, an isoindolyl group, an indazolyl group, a purinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a benzoisoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a benzoquinoxalinyl group, a quinazolinyl group, a benzoquinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, a benzosilolyl group, a benzothiazolyl group, a benzoisothiazolyl group, a benzoxazolyl group, a benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, a thiadiazolyl group, an oxadiazolyl group, a triazinyl group, a carbazolyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a dibenzosilolyl group, a benzocarbazolyl group, a naphthobenzofuranyl group, a naphthobenzothiophenyl group, a naphthobenzosilolyl group, a dibenzocarbazolyl group, a dinaphthofuranyl group, a dinaphthothiophenyl group, a dinaphthosilolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an oxazolopyridinyl group, a thiazolopyridinyl group, a benzonaphthyridinyl group, an azafluorenyl group, an azaspiro-bifluorenyl group, an azacarbazolyl group, an azadibenzofuranyl group, an azadibenzothiophenyl group, an azadibenzosilolyl group, an indenopyrrolyl group, an indolopyrrolyl group, an indenocarbazolyl group, and an indolocarbazolyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a cyano group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentacenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, a silolyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, an indolyl group, an isoindolyl group, an indazolyl group, a purinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a benzoisoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a benzoquinoxalinyl group, a quinazolinyl group, a benzoquinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, a benzosilolyl group, a benzothiazolyl group, a benzoisothiazolyl group, a benzoxazolyl group, a benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, a thiadiazolyl group, an oxadiazolyl group, a triazinyl group, a carbazolyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a dibenzosilolyl group, a benzocarbazolyl group, a naphthobenzofuranyl group, a naphthobenzothiophenyl group, a naphthobenzosilolyl group, a dibenzocarbazolyl group, a dinaphthofuranyl group, a dinaphthothiophenyl group, a dinaphthosilolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an oxazolopyridinyl group, a thiazolopyridinyl group, a benzonaphthyridinyl group, an azafluorenyl group, an azaspiro-bifluorenyl group, an azacarbazolyl group, an azadibenzofuranyl group, an azadibenzothiophenyl group, an azadibenzosilolyl group, an indenopyrrolyl group, an indolopyrrolyl group, an indenocarbazolyl group, an indolocarbazolyl group, —Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)(Q31), —S(═O)2(Q31), —P(═O)(Q31)(Q32), and —P(═S)(Q31)(Q32); and—Si(Q1)(Q2)(Q3), —N(Q1)(Q2), —B(Q1)(Q2), —C(═O)(Q1), —S(═O)(Q1), —S(═O)2(Q1), —P(═O)(Q1)(Q2), and —P(═S)(Q1)(Q2), andQ1to Q3and Q31to Q33may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, a biphenyl group, and a terphenyl group, but embodiments of the present disclosure are not limited thereto. In one embodiment, in Formulae 1 and 2, R15, R16, and R21to R23may each independently be selected from:hydrogen, deuterium, —F, —Cl, —Br, —I, a cyano group, and a C1-C20alkyl group;a C1-C20alkyl group substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, and a cyano group;groups represented by Formulae 5-1 to 5-138; and—Si(Q1)(Q2)(Q3), —N(Q1)(Q2), —B(Q1)(Q2), —C(═O)(Q1), —S(═O)(Q1), —S(═O)2(Q1), —P(═O)(Q1)(Q2), and —P(═S)(Q1)(Q2), but embodiments of the present disclosure are not limited thereto. In one embodiment, in Formulae 1 and 2, R15, R16, and R21to R23may each independently be selected from:hydrogen, deuterium, —F, —Cl, —Br, —I, a cyano group, a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group;a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, and a cyano group; andgroups represented by Formulae 6-1 to 6-257, but embodiments of the present disclosure are not limited thereto. In one embodiment, in Formulae 1 and 2, R15, R16, R22, and R23may each independently be selected from:hydrogen, deuterium, —F, —Cl, —Br, —I, a cyano group, a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group; anda methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I and a cyano group, but embodiments of the present disclosure are not limited thereto. In Formula 1, b15 indicates the number of substituent(s) for R15, and may be selected from 1, 2, 3, 4, 5, and 6. In Formula 1, b16 indicates the number of substituent(s) for R16, and may be selected from 1, 2, 3, and 4. In Formula 2, b22 indicates the number of substituent(s) for R22, and may be selected from 1, 2, and 3. In Formula 2, b23 indicates the number of substituent(s) for R23, and may be selected from 1, 2, 3, and 4. In one embodiment, the diamine compound represented by Formula 1 may be represented by one selected from Formulae 1-1 and 1-2, but embodiments of the present disclosure are not limited thereto: In Formulae 1-1 and 1-2,L11to L14, a11 to a14, R15, R16, b15, and b16 may respectively be the same as described in Formula 1,R21to R23, b22, and b23 may respectively be the same as described in Formula 2, andR11to R14may each independently be selected from a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group. In one or more embodiments, the diamine compound represented by Formula 1 may be represented by one selected from Formulae 1-11 and 1-12, but embodiments of the present disclosure are not limited thereto: In Formulae 1-11 and 1-12,R15, R16, b15, and b16 may respectively be the same as described in Formula 1,R21to R23, b22, and b23 may respectively be the same as described in Formula 2, andR11to R14may each independently be selected from a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group. For example, in Formulae 1-11 and 1-12, R15, R16, R22, and R23may each independently be selected from: hydrogen, deuterium, —F, —Cl, —Br, —I, a cyano group, a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group; and a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I and a cyano group, but embodiments of the present disclosure are not limited thereto. In more detail, the diamine compound represented by Formula 1 may be selected from Compounds 145 to 176, but embodiments of the present disclosure are not limited thereto: While the present disclosure is not limited by any particular mechanism or theory, it is believed that since the diamine compound represented by Formula 1 essentially includes the 2-carbazolyl group, the glass transition temperature and/or the melting point of the diamine compound may be improved. Therefore, an organic light-emitting device including the diamine compound represented by Formula 1 may exhibit long lifespan characteristics, improved storage stability, and/or improved reliability. In addition, it is believed that since the diamine compound represented by Formula 1 essentially includes the 2-carbazolyl group, the hole injection and/or the mobility of the diamine compound are improved. Therefore, the light-emitting region of the organic light-emitting device including the diamine compound may be widened, thereby delaying or reducing the deterioration of the organic light-emitting device. Additionally, it is believed that since the diamine compound represented by Formula 1 includes the naphthyl-phenyl linker, a plane including two amino groups as a substrate may have a tilted structure. Therefore, when the diamine compound is deposited, the diamine compound tends to be densely stacked, thereby improving charge mobility. Therefore, the organic light-emitting device including the diamine compound represented by Formula 1 may have low driving voltage and high efficiency characteristics. The diamine compound represented by Formula 1 may be synthesized by using any suitable organic synthesis method available in the art. Methods of synthesizing the diamine compound may be readily recognized by those of skill in the art by referring to Examples provided below. The diamine compound represented by Formula 1 may be used between a pair of electrodes of an organic light-emitting device. The expression “(an organic layer) includes at least one diamine compound,” as used herein, may include a case in which “(an organic layer) includes identical diamine compound represented by Formula 1” and a case in which “(an organic layer) includes two or more different diamine compounds represented by Formula 1”. For example, the organic layer may include, as the diamine compound, Compound 1 only. In this regard, Compound 1 may exist in a hole transport layer of the organic light-emitting device. In one or more embodiments, the organic layer may include, as the diamine compound, Compound 1 and Compound 2. In one or more embodiments, Compound 1 and Compound 2 may both exist in an identical layer (for example, Compound 1 and Compound 2 may both exist in a hole transport layer), or may exist in different layers (for example, Compound 1 may exist in a hole transport layer and Compound 2 may exist in a hole injection layer). The organic layer includes i) a hole transport region that is disposed between the first electrode (anode) and the emission layer and includes at least one of a hole injection layer, a hole transport layer, a buffer layer, and an electron blocking layer, and ii) an electron transport region that is disposed between the emission layer and the second electrode (cathode) and includes at least one selected from a hole blocking layer, an electron transport layer, and an electron injection layer. For example, the hole transport region of the organic light-emitting device may include at least one of the diamine compound represented by Formula 1. The term “organic layer,” as used herein, refers to a single layer and/or a plurality of layers disposed between the first electrode and the second electrode of the organic light-emitting device. A material included in the “organic layer” is not limited to an organic material. For example, the organic layer may include an inorganic material in addition to an organic material. Description ofFIG.1 FIG.1is a schematic view of an organic light-emitting device10according to an embodiment. The organic light-emitting device10includes a first electrode110, an organic layer150, and a second electrode190. Hereinafter, the structure of the organic light-emitting device10according to an embodiment and a method of manufacturing the organic light-emitting device10will be described in connection withFIG.1. First Electrode110 InFIG.1, a substrate may be additionally disposed under the first electrode110or above the second electrode190. The substrate may be a glass substrate or a plastic substrate, each having excellent mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and water resistance. The first electrode110may be formed by depositing or sputtering a material for forming the first electrode110on the substrate. When the first electrode110is an anode, the material for a first electrode may be selected from materials having a high work function to facilitate hole injection. The first electrode110may be a reflective electrode, a semi-transmissive electrode, or a transmissive electrode. When the first electrode110is a transmissive electrode, a material for forming a first electrode may be selected from indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), and any combinations thereof, but embodiments of the present disclosure are not limited thereto. In one or more embodiments, when the first electrode110is a semi-transmissive electrode or a reflectable electrode, a material for forming a first electrode may be selected from magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), magnesium-silver (Mg—Ag), and any combinations thereof, but embodiments of the present disclosure are not limited thereto. The first electrode110may have a single-layered structure, or a multi-layered structure including two or more layers. For example, the first electrode110may have a three-layered structure of ITO/Ag/ITO, but the structure of the first electrode110is not limited thereto. Organic Layer150 The organic layer150is disposed on the first electrode110. The organic layer150may include an emission layer. The organic layer150may further include a hole transport region between the first electrode110and the emission layer, and an electron transport region between the emission layer and the second electrode190. Hole Transport Region in Organic Layer150 The hole transport region may have i) a single-layered structure including a single layer including a single material, ii) a single-layered structure including a single layer including a plurality of different materials, or iii) a multi-layered structure having a plurality of layers including a plurality of different materials. The hole transport region may include at least one layer selected from a hole injection layer, a hole transport layer, an emission auxiliary layer, and an electron blocking layer. For example, the hole transport region may have a single-layered structure including a single layer including a plurality of different materials, or a multi-layered structure having a hole injection layer/hole transport layer structure, a hole injection layer/hole transport layer/emission auxiliary layer structure, a hole injection layer/emission auxiliary layer structure, a hole transport layer/emission auxiliary layer structure, or a hole injection layer/hole transport layer/electron blocking layer structure, wherein for each structure, constituting layers are sequentially stacked from the first electrode110in this stated order, but the structure of the hole transport region is not limited thereto. The electron transport region may further include the diamine compound. The hole transport region may further include, in addition to the diamine compound, at least one selected from TDATA, 2-TNATA, NPB(NPD), 13-NPB, TPD, Spiro-TPD, Spiro-NPB, methylated-NPB, TAPC, HMTPD, 4,4′,4″-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline/dodecylbenzenesulfonic acid (PANI/DBSA), poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT/PSS), polyaniline/camphor sulfonic acid (PANI/CSA), polyaniline/poly(4-styrenesulfonate) (PANI/PSS), a compound represented by Formula 201, and a compound represented by Formula 202: In Formulae 201 and 202,L201to L204may each independently be selected from a substituted or unsubstituted C3-C10cycloalkylene group, a substituted or unsubstituted C1-C10heterocycloalkylene group, a substituted or unsubstituted C3-C10cycloalkenylene group, a substituted or unsubstituted C1-C10heterocycloalkenylene group, a substituted or unsubstituted C6-C60arylene group, a substituted or unsubstituted C1-C60heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group;L205may be selected from *—O—*′, *—S—*′, *—N(Q201)-*′, a substituted or unsubstituted C1-C20alkylene group, a substituted or unsubstituted C2-C20alkenylene group, a substituted or unsubstituted C3-C10cycloalkylene group, a substituted or unsubstituted C1-C10heterocycloalkylene group, a substituted or unsubstituted C3-C10cycloalkenylene group, a substituted or unsubstituted C1-C10heterocycloalkenylene group, a substituted or unsubstituted C6-C60arylene group, a substituted or unsubstituted C1-C60heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,xa1 to xa4 may each independently be an integer of 0 to 3,xa5 may be an integer of 1 to 10, andR201to R204and Q201may each independently a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group. In one embodiment, in Formula 202, R201and R202may optionally be linked via a single bond, a dimethyl-methylene group, or a diphenyl-methylene group, and R203and R204may optionally be linked via a single bond, a dimethyl-methylene group, or a diphenyl-methylene group. In one embodiment, in Formulae 201 and 202,L201to L205may each independently be selected from:a phenylene group, a pentalenylene group, an indenylene group, a naphthylene group, an azulenylene group, a heptalenylene group, an indacenylene group, an acenaphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenalenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a naphthacenylene group, a picenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a rubicenylene group, a coronenylene group, an ovalenylene group, a thiophenylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothiophenylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, and a pyridinylene group; anda phenylene group, a pentalenylene group, an indenylene group, a naphthylene group, an azulenylene group, a heptalenylene group, an indacenylene group, an acenaphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenalenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a naphthacenylene group, a picenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a rubicenylene group, a coronenylene group, an ovalenylene group, a thiophenylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothiophenylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, and a pyridinylene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a phenyl group substituted with a C1-C10alkyl group, a phenyl group substituted with —F, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, —Si(Q31)(Q32)(Q33), and —N(Q31)(Q32), andQ31to Q33may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group. In one or more embodiments, xa1 to xa4 may each independently be 0, 1, or 2. In one or more embodiments, xa5 may be 1, 2, 3, or 4. In one or more embodiments, R201to R204and Q201may each independently be selected from:a phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, and a pyridinyl group; anda phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, and a pyridinyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a phenyl group substituted with a C1-C10alkyl group, a phenyl group substituted with —F, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, —Si(Q31)(Q32)(Q33), and —N(Q31)(Q32), andQ31to Q33may respectively be the same as described above. In one or more embodiments, in Formula 201, at least one selected from R201to R203may each independently be selected from:a fluorenyl group, a spiro-bifluorenyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothiophenyl group; anda fluorenyl group, a spiro-bifluorenyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothiophenyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a phenyl group substituted with a C1-C10alkyl group, a phenyl group substituted with —F, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothiophenyl group,but embodiments of the present disclosure are not limited thereto. In one or more embodiments, in Formula 202, i) R201and R202may be linked each other via a single bond, and/or ii) R203and R204may be linked each other via a single bond. In one or more embodiments, in Formula 202, at least one selected from R201to R204may be selected from:a carbazolyl group; anda carbazolyl group substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a phenyl group substituted with a C1-C10alkyl group, a phenyl group substituted with —F, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothiophenyl group,but embodiments of the present disclosure are not limited thereto. The compound represented by Formula 201 may be represented by Formula 201A: In one embodiment, the compound represented by Formula 201 may be represented by Formula 201A(1) below, but embodiments of the present disclosure are not limited thereto: In one embodiment, the compound represented by Formula 201 may be represented by Formula 201A-1 below, but embodiments of the present disclosure are not limited thereto: In one embodiment, the compound represented by Formula 202 may be represented by Formula 202A: In one or more embodiments, the compound represented by Formula 202 may be represented by Formula 202A-1: In Formulae 201A, 201A(1), 201A-1, 202A, and 202A-1,L201to L203, xa1 to xa3, xa5, and R202to R204may respectively be the same as described above,R211and R212may respectively be the same as described in connection with R203, andR213to R217may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a phenyl group substituted with a C1-C10alkyl group, a phenyl group substituted with —F, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, and a pyridinyl group. The hole transport region may include at least one compound selected from Compounds HT1 to HT39, but embodiments of the present disclosure are not limited thereto: A thickness of the hole transport region may be in a range of about 100 Å to about 10,000 Å, for example, about 100 Å to about 1,000 Å. When the hole transport region includes at least one of a hole injection layer and a hole transport layer, a thickness of the hole injection layer may be in a range of about 100 Å to about 9,000 Å, for example, about 100 Å to about 1,000 Å, and a thickness of the hole transport layer may be in a range of about 50 Å to about 2,000 Å, for example about 100 Å to about 1,500 Å. When the thicknesses of the hole transport region, the hole injection layer, and the hole transport layer are within the foregoing ranges, suitable or satisfactory hole transporting characteristics may be obtained without a substantial increase in driving voltage. The emission auxiliary layer may increase light-emission efficiency by compensating for an optical resonance distance according to the wavelength of light emitted by an emission layer, and the electron blocking layer may block the flow of electrons from an electron transport region. The emission auxiliary layer and the electron blocking layer may include the materials as described above. p-Dopant The hole transport region may further include, in addition to these materials, a charge-generation material for the improvement of conductive properties. The charge-generation material may be homogeneously or non-homogeneously dispersed in the hole transport region. The charge-generation material may be, for example, a p-dopant. In one embodiment, the p-dopant may have a lowest unoccupied molecular orbital (LUMO) energy level of about −3.5 eV or less. The p-dopant may include at least one selected from a quinone derivative, a metal oxide, and a cyano group-containing compound, but embodiments of the present disclosure are not limited thereto. For example, the p-dopant may include at least one selected from:a quinone derivative, such as tetracyanoquinodimethane (TCNQ) or 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ);a metal oxide, such as tungsten oxide or molybdenum oxide;1,4,5,8,9,12-hexaazatriphenylene-hexacarbonitrile (HAT-CN); anda compound represented by Formula 221 below,but embodiments of the present disclosure are not limited thereto: In Formula 221,R221to R223may each independently be selected from a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, wherein at least one selected from R221to R223may each independently be selected from a cyano group, —F, —Cl, —Br, —I, a C1-C20alkyl group substituted with —F, a C1-C20alkyl group substituted with —Cl, a C1-C20alkyl group substituted with Br, and a C1-C20alkyl group substituted with —I. Emission Layer in Organic Layer150 When the organic light-emitting device10is a full-color organic light-emitting device, the emission layer may be patterned into a red emission layer, a green emission layer, or a blue emission layer, according to a sub-pixel. In one or more embodiments, the emission layer may have a stacked structure of two or more layers selected from a red emission layer, a green emission layer, and a blue emission layer, in which the two or more layers contact each other or are separated from each other. In one or more embodiments, the emission layer may include two or more materials selected from a red light-emitting material, a green light-emitting material, and a blue light-emitting material, in which the two or more materials are mixed with each other in a single layer to emit white light. The emission layer may include a host and a dopant. The dopant may include at least one selected from a phosphorescent dopant and a fluorescent dopant. An amount of the dopant in the emission layer may be in a range of about 0.01 parts by weight to about 15 parts by weight based on 100 parts by weight of the host, but embodiments of the present disclosure are not limited thereto. A thickness of the emission layer may be in a range of about 100 Å to about 1,000 Å, for example, about 200 Å to about 600 Å. When the thickness of the emission layer is within this range, excellent light-emission characteristics may be obtained without a substantial increase in driving voltage. Host in Emission Layer In one or more embodiments, the host may include a compound represented by Formula 301 below: [Ar301]xb11—[(L301)xb1-R301]xb21. Formula 301 In Formula 301,Ar301may be a substituted or unsubstituted C5-C60carbocyclic group or a substituted or unsubstituted C1-C60heterocyclic group,xb11 may be 1, 2, or 3,L301may be selected from a substituted or unsubstituted C3-C10cycloalkylene group, a substituted or unsubstituted C1-C10heterocycloalkylene group, a substituted or unsubstituted C3-C10cycloalkenylene group, a substituted or unsubstituted C1-C10heterocycloalkenylene group, a substituted or unsubstituted C6-C60arylene group, a substituted or unsubstituted C1-C60heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,xb1 may be an integer of 0 to 5,R301may be selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a substituted or unsubstituted C1-C60alkyl group, a substituted or unsubstituted C2-C60alkenyl group, a substituted or unsubstituted C2-C60alkynyl group, a substituted or unsubstituted C1-C60alkoxy group, a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, —Si(Q301)(Q302)(Q303), —N(Q301)(Q302), —B(Q301)(Q302), —C(═O)(Q301), —S(═O)2(Q301), and —P(═O)(Q301)(Q302),xb21 may be an integer of 1 to 5, andQ301to Q303may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group, but embodiments of the present disclosure are not limited thereto. In one embodiment, in Formula 301, Ar3o1may be selected from:a naphthalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, a dibenzofuran group, and a dibenzothiophene group; anda naphthalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, a dibenzofuran group, and a dibenzothiophene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, —Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)2(Q31), and —P(═O)(Q31)(Q32), andQ31to Q33may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group, but embodiments of the present disclosure are not limited thereto. When xb11 in Formula 301 is two or more, two or more Ar301(s) may be linked via a single bond. In one or more embodiments, the compound represented by Formula 301 may be represented by Formula 301-1 or 301-2: In Formulae 301-1 and 301-2,A301to A304may each independently be selected from a benzene group, a naphthalene group, a phenanthrene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a pyridine group, a pyrimidine group, an indene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, an indole group, a carbazole group, a benzocarbazole group, a dibenzocarbazole group, a furan group, a benzofuran group, a dibenzofuran group, a naphthofuran group, a benzonaphthofuran group, a dinaphthofuran group, a thiophene group, a benzothiophene group, a dibenzothiophene group, a naphthothiophene group, a benzonaphthothiophene group, and a dinaphthothiophene group,X301may be O, S, or N-[(L304)xb4-R304],R311to R314may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group —Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)2(Q31), and —P(═O)(C31)(Q32),xb22 and xb23 may each independently be 0, 1, or 2,L301, xb1, R301, and Q31to Q33may respectively be same as described above,L302to L304may respectively be same as described in connection with L301,xb2 to xb4 may respectively be same as described in connection with xb1, andR302to R304may respectively be same as described in connection with R301. For example, in Formulae 301, 301-1, and 301-2, L301to L304may each independently be selected from:a phenylene group, a naphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a thiophenylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothiophenylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, a pyridinylene group, an imidazolylene group, a pyrazolylene group, a thiazolylene group, an isothiazolylene group, an oxazolylene group, an isoxazolylene group, a thiadiazolylene group, an oxadiazolylene group, a pyrazinylene group, a pyrimidinylene group, a pyridazinylene group, a triazinylene group, a quinolinylene group, an isoquinolinylene group, a benzoquinolinylene group, a phthalazinylene group, a naphthyridinylene group, a quinoxalinylene group, a quinazolinylene group, a cinnolinylene group, a phenanthridinylene group, an acridinylene group, a phenanthrolinylene group, a phenazinylene group, a benzimidazolylene group, an isobenzothiazolylene group, a benzoxazolylene group, an isobenzoxazolylene group, a triazolylene group, a tetrazolylene group, an imidazopyridinylene group, an imidazopyrimidinylene group, and an azacarbazolylene group; anda phenylene group, a naphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a thiophenylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothiophenylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, a pyridinylene group, an imidazolylene group, a pyrazolylene group, a thiazolylene group, an isothiazolylene group, an oxazolylene group, an isoxazolylene group, a thiadiazolylene group, an oxadiazolylene group, a pyrazinylene group, a pyrimidinylene group, a pyridazinylene group, a triazinylene group, a quinolinylene group, an isoquinolinylene group, a benzoquinolinylene group, a phthalazinylene group, a naphthyridinylene group, a quinoxalinylene group, a quinazolinylene group, a cinnolinylene group, a phenanthridinylene group, an acridinylene group, a phenanthrolinylene group, a phenazinylene group, a benzimidazolylene group, an isobenzothiazolylene group, a benzoxazolylene group, an isobenzoxazolylene group, a triazolylene group, a tetrazolylene group, an imidazopyridinylene group, an imidazopyrimidinylene group, and an azacarbazolylene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an azacarbazolyl group, —Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)2(Q31), and —P(═O)(Q31)(Q32), andQ31to Q33may respectively be the same as described above. In one embodiment, in Formulae 301, 301-1, and 301-2, R301to R304may each independently be selected from:a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, and an azacarbazolyl group; anda phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, and an azacarbazolyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an azacarbazolyl group, —Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)2(Q31), and —P(═O)(Q31)(Q32), andQ31to Q33may respectively be the same as described above. In one embodiment, the host may include an alkaline earth metal complex. For example, the host may be selected from a Be complex (for example, Compound H55), a Mg complex, and a Zn complex. The host may include at least one selected from 9,10-di(2-naphthyl)anthracene (ADN), 2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN), 9,10-di-(2-naphthyl)-2-t-butyl-anthracene (TBADN), 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP), 1,3-di-9-carbazolylbenzene (mCP), 1,3,5-tri(carbazol-9-yl)benzene (TCP), and Compounds H1 to H55, but embodiments of the present disclosure are not limited thereto: Phosphorescent Dopant Included in Emission Layer in Organic Layer150 The phosphorescent dopant may include an organometallic complex represented by Formula 401 below: In Formulae 401 and 402,M may be selected from iridium (Ir), platinum (Pt), palladium (Pd), osmium (Os), titanium (Ti), zirconium (Zr), hafnium (Hf), europium (Eu), terbium (Tb), rhodium (Rh), and thulium (Tm),L401may be selected from ligands represented by Formula 402, and xc1 may be 1, 2, or 3, wherein, when xc1 is two or more, two or more L401(s) may be identical to or different from each other,L402may be an organic ligand, and xc2 may be an integer of 0 to 4, wherein, when xc2 is two or more, two or more L4o2(s) may be identical to or different from each other,X401to X404may each independently be nitrogen or carbon,X401and X403may be linked via a single bond or a double bond, and X402and X404may be linked via a single bond or a double bond,A401and A402may each independently be a C5-C60carbocyclic group or a C1-C60heterocyclic group,X405may be a single bond, *—O—*′, *S—*′, *—C(═O)—*′, *—N(Q411)-*′, *—C(Q411)(Q412)-*′, *—C(Q411)═C(Q412)-*′, *—C(Q411)═*′, or *═C(Q411)=′, wherein Q411and Q412may be hydrogen, deuterium, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, or a naphthyl group,X406may be a single bond, O, or S,R401and R402may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a substituted or unsubstituted C1-C20alkyl group, a substituted or unsubstituted C1-C20alkoxy group, a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, —Si(Q401)(Q402)(Q403), —N(Q401)(Q402), —B(Q401)(Q402), —C(═O)(Q401), —S(═O)2(Q401), and —P(═O)(Q401)(Q402), wherein Q401to Q403may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a C6-C20aryl group, and a C1-C20heteroaryl group,xc11 and xc12 may each independently be an integer of 0 to 10, andand *′ in Formula 402 each indicate a binding site to M in Formula 401. In one embodiment, in Formula 402, A401and A402may each independently be selected from a benzene group, a naphthalene group, a fluorene group, a spiro-bifluorene group, an indene group, a pyrrole group, a thiophene group, a furan(furan) group, an imidazole group, a pyrazole group, a thiazole group, an isothiazole group, an oxazole group, an isoxazole group, a pyridine group, a pyrazine group, a pyrimidine group, a pyridazine group, a quinoline group, an isoquinoline group, a benzoquinoline group, a quinoxaline group, a quinazoline group, a carbazole group, a benzimidazole group, a benzofuran group, a benzothiophene group, an isobenzothiophene group, a benzoxazole group, an isobenzoxazole group, a triazole group, a tetrazole group, an oxadiazole group, a triazine group, a dibenzofuran group, and a dibenzothiophene group. In one or more embodiments, in Formula 402, i) X401may be nitrogen, and X402may be carbon, or ii) X401and X402may each be nitrogen concurrently (e.g., at the same time). In one or more embodiments, R401and R402in Formula 402 may each independently be selected from:hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, and a C1-C20alkoxy group;a C1-C20alkyl group, and a C1-C20alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a phenyl group, a naphthyl group, a cyclopentyl group, a cyclohexyl group, an adamantanyl group, a norbornanyl group, and a norbornenyl group;a cyclopentyl group, a cyclohexyl group, an adamantanyl group, a norbornanyl group, a norbornenyl group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothiophenyl group;a cyclopentyl group, a cyclohexyl group, an adamantanyl group, a norbornanyl group, a norbornenyl group a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothiophenyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, an adamantanyl group, a norbornanyl group, a norbornenyl group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothiophenyl group; and—Si(Q401)(Q402)(Q403), —N(Q401)(Q402), —B(Q401)(Q402), —C(═O)(Q401), —S(═O)2(Q401), and —P(═O)(Q401)(Q402), andQ401to Q403may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, and a naphthyl group, but embodiments of the present disclosure are not limited thereto. In one or more embodiments, in Formula 401, when xc1 is two or more, two A401(S) among a plurality of L401(S) may optionally be linked via a linking group, X407, or two A402(S) may optionally be linked via a linking group, X408(see Compounds PD1 to PD4 and PD7). X407and X408may each independently be a single bond, *—O—*′, *—S—*′, *—C(═O)—*′, *—N(Q413)-*′, *—C(Q413)(Q414)-*′, or *—C(Q413)═C(Q414)-*′ (wherein Q413and Q414may each independently be hydrogen, deuterium, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, or a naphthyl group), but embodiments of the present disclosure are not limited thereto.L402in Formula 401 may be a monovalent, divalent, or trivalent organic ligand. For example, L402may be selected from halogen, diketone (for example, acetylacetonate), carboxylic acid (for example, picolinate), —C(═O), isonitrile, —CN, and phosphorus (for example, phosphine, or phosphite), but embodiments of the present disclosure are not limited thereto. In one or more embodiments, the phosphorescent dopant may be selected from, for example, Compounds PD1 to PD25, but embodiments of the present disclosure are not limited thereto: Fluorescent Dopant in Emission Layer The fluorescent dopant may include an arylamine compound or a styrylamine compound. The fluorescent dopant may include a compound represented by Formula 501 below. In Formula 501,Ar501may be a substituted or unsubstituted C5-C60carbocyclic group or a substituted or unsubstituted C1-C60heterocyclic group,L501to L503may each independently be selected from a substituted or unsubstituted C3-C10cycloalkylene group, a substituted or unsubstituted C1-C10heterocycloalkylene group, a substituted or unsubstituted C3-C10cycloalkenylene group, a substituted or unsubstituted C1-C10heterocycloalkenylene group, a substituted or unsubstituted C6-C60arylene group, a substituted or unsubstituted C1-C60heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,xd1 to xd3 may each independently be an integer of 0 to 3,R501and R502may each independently be selected from a substituted or unsubstituted C3-C00cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, andxd4 may be an integer of 1 to 6. In one embodiment, in Formula 501, Ar501may be selected from:a naphthalene group, a heptalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, and an indenophenanthrene group; anda naphthalene group, a heptalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, and an indenophenanthrene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group. In one or more embodiments, in Formula 501, L501to L503may each independently be selected from:a phenylene group, a naphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a thiophenylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothiophenylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, and a pyridinylene group; anda phenylene group, a naphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a thiophenylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothiophenylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, and a pyridinylene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, and a pyridinyl group. In one or more embodiments, in Formula 501, R501and R502may each independently be selected from:a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, and a pyridinyl group; anda phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, and a pyridinyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, and —Si(Q31)(Q32)(Q33), andQ31to Q33may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group. In one or more embodiments, in Formula 501, xd4 may be two or more, but embodiments of the present disclosure are not limited thereto. For example, the fluorescent dopant may be selected from Compounds FD1 to FD22: In one or more embodiments, the fluorescent dopant may be selected from the following compounds, but embodiments of the present disclosure are not limited thereto. Electron Transport Region in Organic Layer150 The electron transport region may have i) a single-layered structure including a single layer including a single material, ii) a single-layered structure including a single layer including a plurality of different materials, or iii) a multi-layered structure having a plurality of layers including a plurality of different materials. The electron transport region may include at least one selected from a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, and an electron injection layer, but embodiments of the present disclosure are not limited thereto. For example, the electron transport region may have an electron transport layer/electron injection layer structure, a hole blocking layer/electron transport layer/electron injection layer structure, an electron control layer/electron transport layer/electron injection layer structure, or a buffer layer/electron transport layer/electron injection layer structure, wherein for each structure, constituting layers are sequentially stacked from an emission layer. However, embodiments of the structure of the electron transport region are not limited thereto. The electron transport region (for example, a buffer layer, a hole blocking layer, an electron control layer, or an electron transport layer in the electron transport region) may include a metal-free compound containing at least one π electron-depleted nitrogen-containing ring. The term “π electron-depleted nitrogen-containing ring,” as used herein, indicates a C1-C60heterocyclic group having at least one *—N=*′ moiety as a ring-forming moiety. For example, the “π electron-depleted nitrogen-containing ring” may be i) a 5-membered to 7-membered heteromonocyclic group having at least one *—N=*′ moiety, ii) a heteropolycyclic group in which two or more 5-membered to 7-membered heteromonocyclic groups each having at least one *—N=*′ moiety are condensed with each other (e.g., combined together), or iii) a heteropolycyclic group in which at least one of 5-membered to 7-membered heteromonocyclic groups, each having at least one *—N=*′ moiety, is condensed with (e.g., combined together with) at least one C5-C60carbocyclic group. Examples of the π electron-depleted nitrogen-containing ring include an imidazole, a pyrazole, a thiazole, an isothiazole, an oxazole, an isoxazole, a pyridine, a pyrazine, a pyrimidine, a pyridazine, an indazole, a purine, a quinoline, an isoquinoline, a benzoquinoline, a phthalazine, a naphthyridine, a quinoxaline, a quinazoline, a cinnoline, a phenanthridine, an acridine, a phenanthroline, a phenazine, a benzimidazole, an isobenzothiazole, a benzoxazole, an isobenzoxazole, a triazole, a tetrazole, an oxadiazole, a triazine, thiadiazol, an imidazopyridine, an imidazopyrimidine, and an azacarbazole, but are not limited thereto. For example, the electron transport region may include a compound represented by Formula 601: [Ar601]xe11-[(L601)xe1-R601]xe21. Formula 601 In Formula 601,Ar601may be a substituted or unsubstituted C5-C60carbocyclic group or a substituted or unsubstituted C1-C60heterocyclic group,xe11 may be 1, 2, or 3,L601is selected from a substituted or unsubstituted C3-C10cycloalkylene group, a substituted or unsubstituted C1-C10heterocycloalkylene group, a substituted or unsubstituted C3-C10cycloalkenylene group, a substituted or unsubstituted C1-C10heterocycloalkenylene group, a substituted or unsubstituted C6-C60arylene group, a substituted or unsubstituted C1-C60heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,xe1 may be an integer of 0 to 5,R601may be selected from a substituted or unsubstituted C3-C00cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, —Si(Q601)(Q602)(Q603), —C(═O)(Q601), —S(═O)2(Q601), and —P(═O)(Q601)(Q602),Q601to Q603may each independently be a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, or a naphthyl group, andxe21 may be an integer of 1 to 5. In one embodiment, at least one of Ar601(S) in the number of xe11 and R601(s) in the number of xe21 may include the π electron-depleted nitrogen-containing ring. In one embodiment, ring Ar601in Formula 601 may be selected from:a benzene group, a naphthalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, a dibenzofuran group, a dibenzothiophene group, a carbazole group, an imidazole group, a pyrazole group, a thiazole group, an isothiazole group, an oxazole group, an isoxazole group, a pyridine group, a pyrazine group, a pyrimidine group, a pyridazine group, an indazole group, a purine group, a quinoline group, an isoquinoline group, a benzoquinoline group, a phthalazine group, a naphthyridine group, a quinoxaline group, a quinazoline group, a cinnoline group, a phenanthridine group, an acridine group, a phenanthroline group, a phenazine group, a benzimidazole group, an isobenzothiazole group, a benzoxazole group, an isobenzoxazole group, a triazole group, a tetrazole group, an oxadiazole group, a triazine group, a thiadiazole group, an imidazopyridine group, an imidazopyrimidine group, and an azacarbazole group; anda benzene group, a naphthalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, a dibenzofuran group, a dibenzothiophene group, a carbazole group, an imidazole group, a pyrazole group, a thiazole group, an isothiazole group, an oxazole group, an isoxazole group, a pyridine group, a pyrazine group, a pyrimidine group, a pyridazine group, an indazole group, a purine group, a quinoline group, an isoquinoline group, a benzoquinoline group, a phthalazine group, a naphthyridine group, a quinoxaline group, a quinazoline group, a cinnoline group, a phenanthridine group, an acridine group, a phenanthroline group, a phenazine group, a benzimidazole group, an isobenzothiazole group, a benzoxazole group, an isobenzoxazole group, a triazole group, a tetrazole group, an oxadiazole group, a triazine group, a thiadiazole group, an imidazopyridine group, an imidazopyrimidine group, and an azacarbazole group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, —Si(Q31)(Q32)(Q33), —S(═O)2(Q31), and —P(═O)(Q31)(Q32), andQ31to Q33may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group. When xe11 in Formula 601 is two or more, two or more Ar601(s) may be linked via a single bond. In one or more embodiments, Ar601in Formula 601 may be an anthracene group. In one or more embodiments, a compound represented by Formula 601 may be represented by Formula 601-1: In Formula 601-1,X614may be N or C(R614), X615may be N or C(R615), X616may be N or C(R616), and at least one selected from X614to X616may be N,L611to L613may each independently be the same as described in connection with L601,xe611 to xe613 may each independently be the same as described in connection with xe1,R611to R613may each independently be the same as described in connection with R601, andR614to R616may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group. In one embodiment, in Formulae 601 and 601-1, L601and L611to L613may each independently be selected from:a phenylene group, a naphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a thiophenylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothiophenylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, a pyridinylene group, an imidazolylene group, a pyrazolylene group, a thiazolylene group, an isothiazolylene group, an oxazolylene group, an isoxazolylene group, a thiadiazolylene group, an oxadiazolylene group, a pyrazinylene group, a pyrimidinylene group, a pyridazinylene group, a triazinylene group, a quinolinylene group, an isoquinolinylene group, a benzoquinolinylene group, a phthalazinylene group, a naphthyridinylene group, a quinoxalinylene group, a quinazolinylene group, a cinnolinylene group, a phenanthridinylene group, an acridinylene group, a phenanthrolinylene group, a phenazinylene group, a benzimidazolylene group, an isobenzothiazolylene group, a benzoxazolylene group, an isobenzoxazolylene group, a triazolylene group, a tetrazolylene group, an imidazopyridinylene group, an imidazopyrimidinylene group, and an azacarbazolylene group; anda phenylene group, a naphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a thiophenylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothiophenylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, a pyridinylene group, an imidazolylene group, a pyrazolylene group, a thiazolylene group, an isothiazolylene group, an oxazolylene group, an isoxazolylene group, a thiadiazolylene group, an oxadiazolylene group, a pyrazinylene group, a pyrimidinylene group, a pyridazinylene group, a triazinylene group, a quinolinylene group, an isoquinolinylene group, a benzoquinolinylene group, a phthalazinylene group, a naphthyridinylene group, a quinoxalinylene group, a quinazolinylene group, a cinnolinylene group, a phenanthridinylene group, an acridinylene group, a phenanthrolinylene group, a phenazinylene group, a benzimidazolylene group, an isobenzothiazolylene group, a benzoxazolylene group, an isobenzoxazolylene group, a triazolylene group, a tetrazolylene group, an imidazopyridinylene group, an imidazopyrimidinylene group, and an azacarbazolylene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, and an azacarbazolyl group,but embodiments of the present disclosure are not limited thereto. In one or more embodiment, in Formulae 601 and 601-1, xe1 and xe611 to xe613 may each independently be 0, 1, or 2. In one or more embodiments, in Formulae 601 and 601-1, R601and R611to R613may each independently be selected from:a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, and an azacarbazolyl group;a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, and an azacarbazolyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, and an azacarbazolyl group; and—S(═O)2(Q601) and —P(═O)(Q601)(Q602), andQ601and Q602may respectively be the same as described above. The electron transport region may include at least one compound selected from Compounds ET1 to ET36, but embodiments of the present disclosure are not limited thereto: In one or more embodiments, the electron transport region may include at least one selected from 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ), and NTAZ. A thickness of the buffer layer, the hole blocking layer, or the electron control layer may be in a range of about 20 Å to about 1,000 Å, for example, about 30 Å to about 300 Å. When the thicknesses of the buffer layer, the hole blocking layer, and the electron control layer are within the foregoing ranges, the electron blocking layer may have excellent electron blocking characteristics or electron control characteristics without a substantial increase in driving voltage. A thickness of the electron transport layer may be in a range of about 100 Å to about 1,000 Å, for example, about 150 Å to about 500 Å. When the thickness of the electron transport layer is within the range described above, the electron transport layer may have suitable or satisfactory electron transport characteristics without a substantial increase in driving voltage. The electron transport region (for example, the electron transport layer in the electron transport region) may further include, in addition to the materials described above, a metal-containing material. The metal-containing material may include at least one selected from alkali metal complex and alkaline earth-metal complex. The alkali metal complex may include a metal ion selected from a Li ion, a Na ion, a K ion, a Rb ion, and a Cs ion, and the alkaline earth-metal complex may include a metal ion selected from a Be ion, a Mg ion, a Ca ion, a Sr ion, and a Ba ion. A ligand coordinated with the metal ion of the alkali metal complex or the alkaline earth-metal complex may be selected from a hydroxy quinoline, a hydroxy isoquinoline, a hydroxy benzoquinoline, a hydroxy acridine, a hydroxy phenanthridine, a hydroxy phenyloxazole, a hydroxy phenylthiazole, a hydroxy diphenyloxadiazole, a hydroxy diphenylthiadiazol, a hydroxy phenylpyridine, a hydroxy phenylbenzimidazole, a hydroxy phenylbenzothiazole, a bipyridine, a phenanthroline, and a cyclopentadiene, but embodiments of the present disclosure are not limited thereto. For example, the metal-containing material may include a Li complex. The Li complex may include, for example, Compound ET-D1 (lithium quinolate, LiQ) or ET-D2. The electron transport region may include an electron injection layer that facilitates injection of electrons from the second electrode190. The electron injection layer may directly contact the second electrode190. The electron injection layer may have i) a single-layered structure including a single layer including a single material, ii) a single-layered structure including a single layer including a plurality of different materials, or iii) a multi-layered structure having a plurality of layers including a plurality of different materials. The electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth-metal compound, a rare earth metal compound, an alkali metal complex, an alkaline earth-metal complex, a rare earth metal complex, or any combinations thereof. The alkali metal may be selected from Li, Na, K, Rb, and Cs. In one embodiment, the alkali metal may be Li, Na, or Cs. In one or more embodiments, the alkali metal may be Li or Cs, but embodiments of the present disclosure are not limited thereto. The alkaline earth metal may be selected from Mg, Ca, Sr, and Ba. The rare earth metal may be selected from Sc, Y, Ce, Tb, Yb, and Gd. The alkali metal compound, the alkaline earth-metal compound, and the rare earth metal compound may be selected from oxides and halides (for example, fluorides, chlorides, bromides, or iodides) of the alkali metal, the alkaline earth-metal, and the rare earth metal. The alkali metal compound may be selected from alkali metal oxides, such as Li2O, Cs2O, or K2O, and alkali metal halides, such as LiF, NaF, CsF, KF, LiI, NaI, CsI, KI, or RbI. In one embodiment, the alkali metal compound may be selected from LiF, Li2O, NaF, LiI, NaI, CsI, and KI, but embodiments of the present disclosure are not limited thereto. The alkaline earth-metal compound may be selected from alkaline earth-metal oxides, such as BaO, SrO, CaO, BaxSr1-xO (0<x<1), BaxCa1-xO (0<x<1). In one embodiment, the alkaline earth-metal compound may be selected from BaO, SrO, and CaO, but embodiments of the present disclosure are not limited thereto. The rare earth metal compound may be selected from YbF3, ScF3, ScO3, Y2O3, Ce2O3, GdF3, and TbF3. In one embodiment, the rare earth metal compound may be selected from YbF3, ScF3, TbF3, YbI3, ScI3, and TbI3, but embodiments of the present disclosure are not limited thereto. The alkali metal complex, the alkaline earth-metal complex, and the rare earth metal complex may include an ion of alkali metal, alkaline earth-metal, and rare earth metal as described above, and a ligand coordinated with a metal ion of the alkali metal complex, the alkaline earth-metal complex, or the rare earth metal complex may be selected from hydroxy quinoline, hydroxy isoquinoline, hydroxy benzoquinoline, hydroxy acridine, hydroxy phenanthridine, hydroxy phenyloxazole, hydroxy phenylthiazole, hydroxy diphenyloxadiazole, hydroxy diphenylthiadiazol, hydroxy phenylpyridine, hydroxy phenylbenzimidazole, hydroxy phenylbenzothiazole, bipyridine, phenanthroline, and cyclopentadiene, but embodiments of the present disclosure are not limited thereto. The electron injection layer may consist of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth-metal compound, a rare earth metal compound, an alkali metal complex, an alkaline earth-metal complex, a rare earth metal complex, or any combinations thereof, as described above. In one or more embodiments, the electron injection layer may further include an organic material. When the electron injection layer further includes an organic material, an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth-metal compound, a rare earth metal compound, an alkali metal complex, an alkaline earth-metal complex, a rare earth metal complex, or any combinations thereof may be homogeneously or non-homogeneously dispersed in a matrix including the organic material. A thickness of the electron injection layer may be in a range of about 1 Å to about 100 Å, for example, about 3 Å to about 90 Å. When the thickness of the electron injection layer is within the range described above, the electron injection layer may have suitable or satisfactory electron injection characteristics without a substantial increase in driving voltage. Second Electrode190 The second electrode190may be disposed on the organic layer150having such a structure. The second electrode190may be a cathode which is an electron injection electrode, and in this regard, a material for forming the second electrode190may be selected from metal, an alloy, an electrically conductive compound, and a combination thereof, which have a relatively low work function. The second electrode190may include at least one selected from lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), magnesium-silver (Mg—Ag), ITO, and IZO, but embodiments of the present disclosure are not limited thereto. The second electrode190may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode. The second electrode190may have a single-layered structure, or a multi-layered structure including two or more layers. Description ofFIGS.2-4 An organic light-emitting device20ofFIG.2includes a first capping layer210, a first electrode110, an organic layer150, and a second electrode190which are sequentially stacked in this stated order, an organic light-emitting device30ofFIG.3includes a first electrode110, an organic layer150, a second electrode190, and a second capping layer220which are sequentially stacked in this stated order, and an organic light-emitting device40ofFIG.4includes a first capping layer210, a first electrode110, an organic layer150, a second electrode190, and a second capping layer220. RegardingFIGS.2-4, the first electrode110, the organic layer150, and the second electrode190may be understood by referring to the description presented in connection withFIG.1. In the organic layer150of each of the organic light-emitting devices20and40, light generated in an emission layer may pass through the first electrode110, which is a semi-transmissive electrode or a transmissive electrode, and the first capping layer210toward the outside, and in the organic layer150of each of the organic light-emitting devices30and40, light generated in an emission layer may pass through the second electrode190, which is a semi-transmissive electrode or a transmissive electrode, and the second capping layer220toward the outside. The first capping layer210and the second capping layer220may increase external luminescent efficiency according to the principle of constructive interference. The first capping layer210and the second capping layer220may each independently be an organic capping layer including an organic material, an inorganic capping layer including an inorganic material, or a composite capping layer including an organic material and an inorganic material. At least one selected from the first capping layer210and the second capping layer220may each independently include at least one material selected from carbocyclic compounds, heterocyclic compounds, amine-based compounds, porphyrine derivatives, phthalocyanine derivatives, a naphthalocyanine derivatives, alkali metal complexes, and alkaline earth-based complexes. The carbocyclic compound, the heterocyclic compound, and the amine-based compound may be optionally substituted with a substituent containing at least one element selected from O, N, S, Se, Si, F, Cl, Br, and I. In one embodiment, at least one selected from the first capping layer210and the second capping layer220may each independently include an amine-based compound. In one embodiment, at least one selected from the first capping layer210and the second capping layer220may each independently include the compound represented by Formula 201 or the compound represented by Formula 202. In one or more embodiments, at least one selected from the first capping layer210and the second capping layer220may each independently include a compound selected from Compounds HT28 to HT33 and Compounds CP1 to CP5, but embodiments of the present disclosure are not limited thereto. Hereinbefore, the organic light-emitting device according to an embodiment has been described in connection withFIGS.1-4. However, embodiments of the present disclosure are not limited thereto. Layers constituting the hole transport region, an emission layer, and layers constituting the electron transport region may be formed in a certain region by using one or more suitable methods selected from vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, ink-jet printing, laser-printing, and laser-induced thermal imaging. When layers constituting the hole transport region, an emission layer, and layers constituting the electron transport region are formed by vacuum deposition, the deposition may be performed at a deposition temperature of about 100° C. to about 500° C., a vacuum degree of about 10−8torr to about 10−3torr, and a deposition speed of about 0.01 Å/sec to about 100 Å/sec by taking into account a material to be included in a layer to be formed, and the structure of a layer to be formed. When layers constituting the hole transport region, an emission layer, and layers constituting the electron transport region are formed by spin coating, the spin coating may be performed at a coating speed of about 2,000 rpm to about 5,000 rpm and at a heat treatment temperature of about 80° C. to about 200° C. by taking into account a material to be included in a layer to be formed, and the structure of a layer to be formed. General Definition of Some of the Substituents The term “C1-C60alkyl group,” as used herein, refers to a linear or branched saturated aliphatic hydrocarbon monovalent group having 1 to 60 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, a pentyl group, an isoamyl group, and a hexyl group. The term “C1-C60alkylene group,” as used herein, refers to a divalent group having substantially the same structure as the C1-C60alkyl group. The term “C2-C60alkenyl group,” as used herein, refers to a hydrocarbon group having at least one carbon-carbon double bond at a main chain (e.g., in the middle) or at a terminus of the C2-C60alkyl group, and examples thereof include an ethenyl group, a propenyl group, and a butenyl group. The term “C2-C60alkenylene group,” as used herein, refers to a divalent group having substantially the same structure as the C2-C60alkenyl group. The term “C2-C60alkynyl group,” as used herein, refers to a hydrocarbon group having at least one carbon-carbon triple bond at a main chain (e.g., in the middle) or at a terminus of the C2-C60alkyl group, and examples thereof include an ethynyl group, and a propynyl group. The term “C2-C60alkynylene group”, as used herein, refers to a divalent group having substantially the same structure as the C2-C60alkynyl group. The term “C1-C60alkoxy group,” as used herein, refers to a monovalent group represented by —OA101(wherein A101is the C1-C60alkyl group), and examples thereof include a methoxy group, an ethoxy group, and an isopropyloxy group. The term “C3-C10cycloalkyl group,” as used herein, refers to a monovalent saturated hydrocarbon monocyclic group having 3 to 10 carbon atoms, and examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, and a cycloheptyl group. The term “C3-C10cycloalkylene group,” as used herein, refers to a divalent group having substantially the same structure as the C3-C10cycloalkyl group. The term “C1-C10heterocycloalkyl group,” as used herein, refers to a monovalent monocyclic group having at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom and 1 to 10 carbon atoms, and examples thereof include a 1,2,3,4-oxatriazolidinyl group, a tetrahydrofuranyl group, and a tetrahydrothiophenyl group. The term “C1-C10heterocycloalkylene group,” as used herein, refers to a divalent group having substantially the same structure as the C1-C10heterocycloalkyl group. The term “C3-C10cycloalkenyl group,” as used herein, refers to a monovalent monocyclic group that has 3 to 10 carbon atoms and at least one carbon-carbon double bond in the ring thereof and no aromaticity (e.g., the entire ring, group, and/molecule is not aromatic), and examples thereof include a cyclopentenyl group, a cyclohexenyl group, and a cycloheptenyl group. The term “C3-C10cycloalkenylene group,” as used herein, refers to a divalent group having substantially the same structure as the C3-C10cycloalkenyl group. The term “C1-C10heterocycloalkenyl group,” as used herein, refers to a monovalent monocyclic group that has at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom, 1 to 10 carbon atoms, and at least one carbon-carbon double bond in its ring. Non-limiting examples of the C1-C10heterocycloalkenyl group include a 4,5-dihydro-1,2,3,4-oxatriazolyl group, a 2,3-dihydrofuranyl group, and a 2,3-dihydrothiophenyl group. The term “C1-C10heterocycloalkenylene group,” as used herein, refers to a divalent group having substantially the same structure as the C1-C10heterocycloalkenyl group. The term “C6-C60aryl group,” as used herein, refers to a monovalent group having a carbocyclic aromatic system having 6 to 60 carbon atoms, and the term “C6-C60arylene group,” as used herein, refers to a divalent group having a carbocyclic aromatic system having 6 to 60 carbon atoms. Examples of the C6-C60aryl group are a phenyl group, a naphthyl group, an anthracenyl group, a phenanthrenyl group, a pyrenyl group, and a chrysenyl group. When the C6-C60aryl group and the C6-C60arylene group each include two or more rings, the rings may be fused to each other (e.g., combined together). The term “C1-C60heteroaryl group,” as used herein, refers to a monovalent group having a carbocyclic aromatic system that has at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom, in addition to 1 to 1 carbon atoms. The term “C1-C60heteroarylene group,” as used herein refers to a divalent group having a carbocyclic aromatic system that has at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom, in addition to 1 to 60 carbon atoms. Examples of the C1-C60heteroaryl group are a pyridinyl group, a pyrimidinyl group, a pyrazinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, and an isoquinolinyl group. When the C1-C60heteroaryl group and the C1-C60heteroarylene group each include two or more rings, the rings may be fused to each other (e.g., combined together). The term “C6-C60aryloxy group,” as used herein, indicates —OA102(wherein A102is the C6-C60aryl group), and a C6-C60arylthio group indicates —SA103(wherein A103is the C6-C60aryl group). The term “C1-C60heteroaryloxy group,” as used herein, indicates —OA104(wherein A104is the C1-C60heteroaryl group), and the term “C6-C60heteroarylthio group,” as used herein, indicates —SA105 (wherein A105is the C1-C60heteroaryl group). The term “monovalent non-aromatic condensed polycyclic group,” as used herein, refers to a monovalent group (for example, having 8 to 60 carbon atoms) having two or more rings condensed with each other (e.g., combined together), only carbon atoms as ring-forming atoms, and no aromaticity in its entire molecular structure (e.g., the entire group and/or molecule is not aromatic). An example of the monovalent non-aromatic condensed polycyclic group is a fluorenyl group. The term “divalent non-aromatic condensed polycyclic group,” as used herein, refers to a divalent group having substantially the same structure as the monovalent non-aromatic condensed polycyclic group. The term “monovalent non-aromatic condensed heteropolycyclic group,” as used herein, refers to a monovalent group (for example, having 1 to 60 carbon atoms) having two or more rings condensed to each other (e.g., combined together), at least one heteroatom selected from N, O, Si, P, and S, other than carbon atoms, as a ring-forming atom, and no aromaticity in its entire molecular structure (e.g., the entire group and/or molecule is not aromatic). An example of the monovalent non-aromatic condensed heteropolycyclic group is a carbazolyl group. The term “divalent non-aromatic condensed heteropolycyclic group,” as used herein, refers to a divalent group having substantially the same structure as the monovalent non-aromatic condensed heteropolycyclic group. The term “C5-C60carbocyclic group,” as used herein, refers to a monocyclic or polycyclic group having 5 to 60 carbon atoms in which a ring-forming atom is a carbon atom only. The C5-C60carbocyclic group may be an aromatic carbocyclic group or a non-aromatic carbocyclic group. The C5-C60carbocyclic group may be a ring, such as benzene, a monovalent group, such as a phenyl group, or a divalent group, such as a phenylene group. In one or more embodiments, depending on the number of substituents connected to the C5-C60carbocyclic group, the C5-C60carbocyclic group may be a trivalent group or a quadrivalent group. The term “C1-C60heterocyclic group,” as used herein, refers to a group having substantially the same structure as the C5-C60carbocyclic group, except that as a ring-forming atom, at least one heteroatom selected from N, O, Si, P, and S is used in addition to carbon (the number of carbon atoms may be in a range of 1 to 60). At least one substituent of the substituted C5-C60carbocyclic group, the substituted C1-C60heterocyclic group, the substituted C3-C10cycloalkylene group, the substituted C1-C10heterocycloalkylene group, the substituted C3-C10cycloalkenylene group, the substituted C1-C10heterocycloalkenylene group, the substituted C6-C60arylene group, the substituted C1-C60heteroarylene group, the substituted divalent non-aromatic condensed polycyclic group, the substituted divalent non-aromatic condensed heteropolycyclic group, the substituted C1-C60alkyl group, the substituted C2-C60alkenyl group, the substituted C2-C60alkynyl group, the substituted C1-C60alkoxy group, the substituted C3-C10cycloalkyl group, the substituted C1-C10heterocycloalkyl group, the substituted C3-C10cycloalkenyl group, the substituted C1-C10heterocycloalkenyl group, the substituted C6-C60aryl group, the substituted C6-C60aryloxy group, the substituted C6-C60arylthio group, the substituted C1-C60heteroaryl group, the substituted C1-C60heteroaryloxy group, the substituted C1-C60heteroarylthio group, the substituted monovalent non-aromatic condensed polycyclic group, and the substituted monovalent non-aromatic condensed heteropolycyclic group may be selected from:deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, and a C1-C60alkoxy group;a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, and a C1-C60alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C3-C10cycloalkyl group, a C1-C0heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a C1-C60heteroaryloxy group, a C1-C60heteroarylthio group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —Si(Q11)(Q12)(Q13), —N(Q11)(Q12), —B(Q11)(Q12), —C(═O)(Q11), —S(═O)2(Q11), and —P(═O)(Q11)(Q12);a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a C1-C60heteroaryloxy group, a C1-C60heteroarylthio group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group; a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a C1-C60heteroaryloxy group, a C1-C60heteroarylthio group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a C1-C60heteroaryloxy group, a C1-C60heteroarylthio group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —Si(Q21)(Q22)(Q23), —N(Q21)(Q22), —B(Q21)(Q22), —C(═O)(Q21), —S(═O)2(Q21), and —P(═O)(Q21)(Q22); and—Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)2(Q31), and —P(═O)(Q31)(Q32), andQ11to Q13, Q21to Q23, and Q31to Q33may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C1-C60heteroaryl group, a C1-C60heteroaryloxy group, a C1-C60heteroarylthio group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, a biphenyl group, and a terphenyl group. The term “Ph,” as used herein, represents a phenyl group, the term “Me,” as used herein, represents a methyl group, the term “Et,” as used herein, represents an ethyl group, and the term “ter-Bu” or “But,” as used herein, represents a tert-butyl group. The term “biphenyl group,” as used herein, refers to “a phenyl group substituted with a phenyl group.” In other words, the “biphenyl group” is a substituted phenyl group having a C6-C60aryl group as a substituent. The term “terphenyl group,” as used herein, refers to “a phenyl group substituted with a biphenyl group.” In other words, the “terphenyl group” is a phenyl group having, as a substituent, a C6-C60aryl group substituted with a C6-C60aryl group.and *′ used herein, unless defined otherwise, each refer to a binding site to a neighboring atom in a corresponding formula. Hereinafter, a compound according to embodiments and an organic light-emitting device according to embodiments will be described in more detail with reference to Synthesis Examples and Examples. The wording “B was used instead of A” used in describing Synthesis Examples refers to that an identical (e.g., substantially identical) molar equivalent of B was used in place of A. EXAMPLES Synthesis Example 1: Synthesis of Compound 146 (1) Synthesis of Intermediate 146-1 4 g of (4-bromophenyl)boronic acid and 4.8 g of 1-bromo-4-chloronaphthalene were added to 80 ml of tetrahydrofuran (THF), 560 mg of Pd(PPh3)4and 5.4 g of potassium carbonate diluted in 20 ml of water were added dropwise thereto, and the reaction mixture was stirred at a temperature of 60° C. for 4 hours. The reaction mixture was cooled to room temperature, and an organic layer was extracted three times by using ethyl acetate and separated therefrom. The organic layer was dried by anhydrous magnesium sulfate and filtered under reduced pressure. A residue obtained therefrom was separated and purified by column chromatography to obtain 5 g (yield of 81%) of Intermediate 146-1. C16H10BrCl: M+ Calcd: 315.97 Found: 316.0. (2) Synthesis of Intermediate 146-2 3.2 g of Intermediate 146-1, 3.4 g of N,9-diphenyl-9H-carbazole-2-amine, 0.34 g of Pd2(dba)3, 0.1 ml of PtBu3, and 3.4 g of KOt-Bu were dissolved in 60 ml of toluene and stirred at a temperature of 85° C. for 1 hour. The mixture was cooled to room temperature, and the reaction was terminated with water. Then, an organic layer was extracted therefrom three times by using ethyl acetate. The extracted organic layer was dried by using anhydrous magnesium sulfate and distilled under reduced pressure. A residue obtained therefrom was separated and purified by column chromatography to obtain 4.9 g (yield of 87%) of Intermediate 146-2. C40H27ClN2: M+ Calcd: 570.19 Found: 571.2. (3) Synthesis of Compound 146 3.2 g (yield of 77%) of Compound 146 was obtained in substantially the same manner as in Synthesis of Intermediate 146-2, except that 3 g of Intermediate 146-2 and 1.6 g of N-phenyldibenzo[b,d]furan-3-amine were used. Synthesis Example 2: Synthesis of Compound 152 3.3 g (yield of 69%) of Compound 152 was obtained in substantially the same manner as in Synthesis of Compound 146, except that 2.1 g of N-([1,1′-biphenyl]-4-yl)dibenzo[b,d]furan-1-amine was used instead of 1.6 g of N-phenyldibenzo[b,d]furan-3-amine. Synthesis Example 3: Synthesis of Compound 162 3 g (71%) of Compound 162 was obtained in substantially the same manner as in Synthesis of Compound 146, except that 1.5 g of N-phenyl-[1,1′-biphenyl]-4-amine was used instead of 1.6 g of N-phenyldibenzo[b,d]furan-3-amine. Synthesis Example 4: Synthesis of Compound 163 3.1 g (yield of 72%) of Compound 163 was obtained in substantially the same manner as in Synthesis of Compound 146, except that 1.5 g of N-phenyl-[1,1′-biphenyl]-2-amine was used instead of 1.6 g of N-phenyldibenzo[b,d]furan-3-amine. Synthesis Example 5: Synthesis of Compound 166 2.8 g (yield of 66%) of Compound 166 was obtained in substantially the same manner as in Synthesis of Compound 146, except that 1.8 g of N-([1,1′-biphenyl]-4-yl)naphthalene-1-amine was used instead of 1.6 g of N-phenyldibenzo[b,d]furan-3-amine. Synthesis Example 6: Synthesis of Compound 170 (1) Synthesis of Intermediate 170-1 4 g (yield of 84%) of Intermediate 170-1 was obtained in substantially the same manner as in Synthesis of Intermediate 146-2, except that 2.5 g of N-phenyl-[1,1′-biphenyl]-4-amine was used instead of 3.4 g of N,9-diphenyl-9H-carbazole-2-amine. (2) Synthesis of Compound 170 5.1 g (yield of 79%) of Compound 170 was obtained in substantially the same manner as in Synthesis of Compound 146, except that 4 g of Intermediate 170-1 and 3.3 g of N,9-diphenyl-9H-carbazole-2-amine were respectively used instead of 3 g of Intermediate 146-2 and 1.6 g of N-phenyldibenzo[b,d]furan-3-amine. 1H NMR and MS/FAB of Compounds synthesized in Synthesis Examples 1 to 6 were shown in Table 1 below. Methods of synthesizing compounds other than the compound shown in Table 1 (where the term “Calcd” indicates that the values were calculated) should be readily recognizable by those of ordinary skill in the art by referring to the synthesis paths and source materials described above. TABLE 1MS/FABCompound1H NMR(CDCl3, 400 MHz)FoundCalcd1468.17(m, 1H), 7.82(m, 1H), 7.75-7.65(m, 4H), 7.54-793.32793.317.23(m, 15H), 7.08-7.02(m, 4H), 6.96-6.87(m, 5H),6.80(dd, 1H), 6.66-6,.60(m, 2H), 6.53-6.50(m, 2H),6.41-6.39(m, 2H), 6.26-6.22(m, 2H)1528.17(m, 1H), 7.82-7.80(m, 2H), 7.72-7.70(m, 1H),869.35869.347.63-7.61(m, 2H). 7.54-7.23(m, 23H), 7.09-7.04(m,2H). 6.95-6.87(4H), 6.82(dd, 1H). 6.66-6.59(m,2H), 6.54-6.49(m, 4H). 6.42-6.39(m, 2H)1628.17(m, 1H), 7.82-7.80(m, 1H), 7.66-7.62(m, 3H),779.35779.337.55-7.23(m, 18H), 7.16(d, 1H), 7.09-7.04(m, 4H),6.95-6.79(m, 5H), 6.66-6.59(m, 2H), 6.54-6.49(m,2H). 6.42-6.39(m, 2H)m 6.14-6.11(m, 2H)1638.17(m, 1H). 7.82-7.80(m, 1H), 7.60-7.44(m, 13H),779.35779.337.40-7.22(m, 6H), 7.18-7.12(m, 2H), 7.08-6.83(m,9H), 6.81(dd, 1H), 6.65-6.60(m, 2), 6.54-6.50(m,2H), 6.41-6.38(m, 2H), 6.17-6.14(m, 2H)1668.17-8.15(m, 1H). 8.04-8.01(m, 1H). 7.87(m, 1H),829.38829.357.80(m, 1H), 7.63-7.61(m, 2H). 7.55-7.21(m, 22H),7.17(t, 1H). 7.09-7.04(m, 2H). 6.92-6.88(m, 2H),6.81 (dd, 1H), 6.70-6.62(m, 3H). 6.54-6.50(m, 3H),6.43-6.39(m, 2H). 6.27-6.23(m, 2H)1708.18-8.15(m, 1H). 7.85-7.83(m, 1H). 7.71(dd, 1),779.35779.337.64-7.61(m, 2H), 7.55-7.23(m, 18H), 7.08-6.82(m,11H), 6.67-6.61(m, 2H). 6.55(dd, 1H). 6.27-6.18(m,4H) Example 1 As an anode, a 15 Ω/cm2(1200 Å) ITO glass substrate was cut to a size of 50 mm×50 mm×0.7 mm, sonicated with isopropyl alcohol and pure water each for 5 minutes, and then cleaned by exposure to ultraviolet rays and ozone for 30 minutes. Then, the ITO glass substrate was provided to a vacuum deposition apparatus. 2-TNATA was vacuum-deposited on the ITO glass substrate to form a hole injection layer having a thickness of 600 Å, Compound 146 was vacuum-deposited on the hole injection layer to form a hole transport layer having a thickness of 300 Å. 9,10-di-naphthalene-2-yl-anthracene (ADN) (blue fluorescent host) and DPAVBi (blue fluorescent dopant) were co-deposited on the hole transport layer at a weight ratio of 98:2 to form an emission layer having a thickness of 300 Å. Alq3was deposited on the emission layer to form an electron transport layer having a thickness of 300 Å, LiF was deposited on the electron transport layer to form an electron injection layer having a thickness of 10 Å, and Al was deposited on the electron injection layer to form a cathode having a thickness of 3000 Å, thereby completing the manufacture of an organic light-emitting device. Examples 2 to 6 and Comparative Examples 1 to 3 Organic light-emitting devices were manufactured in substantially the same manner as in Example 1, except that Compounds shown in Table 2 were each used instead of Compound 146 in forming a hole transport layer. Evaluation Example The driving voltage, luminance, efficiency, and lifespan of the organic light-emitting devices manufactured according to Examples 1 to 6 and Comparative Examples 1 to 3 were measured at a current density of 10 mA/cm2by using Keithley SMU 236 and a luminance meter PR650, and results thereof are shown in Table 2. The lifespan indicates an amount of time that lapses when luminance was 50% of initial luminance (100%) (at a current density of 100 mA/cm2) after driving an organic light-emitting device. TABLE 2Material forDrivingCurrenthole transportvoltagedensityLuminanceEfficiencyEmissionLifespanlayer(V)(mA/cm2)(cd/m2)(cd/A)color(time)Comparative Example 1NPB7.015026455.29Blue258Comparative Example 2Compound A4.535033006.6Blue291Comparative Example 3Compound B4.485032156.43Blue293Example 1Compound 1464.205037507.50Blue320Example 2Compound 1524.205037507.50Blue324Example 3Compound 1624.265037307.46Blue371Example 4Compound 1634.265036707.34Blue332Example 5Compound 1664.255036757.35Blue392Example 6Compound 1704.325035857.17Blue414 Referring to Table 1, it is confirmed that the driving voltage and the efficiency of the organic light-emitting devices of Examples 1 to 6 are improved as compared with the organic light-emitting devices of Comparative Examples 1 to 3. For example, it has been confirmed that the lifespan of the organic light-emitting devices of Examples 1 to 6 is remarkably improved as compared with the organic light-emitting devices of Comparative Examples 1 to 3. The organic light-emitting device including the diamine compound may have a low driving voltage, high efficiency, high luminance, high color purity, and a long lifespan. It should be understood that embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should typically be considered as available for other similar features or aspects in other embodiments. It will be understood that, although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section described below could be termed a second element, component, region, layer or section, without departing from the spirit and scope of the present disclosure. Spatially relative terms, such as “beneath,” “below,” “lower,” “under,” “above,” “upper,” and the like, may be used herein for ease of explanation to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or in operation, in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” or “under” other elements or features would then be oriented “above” the other elements or features. Thus, the example terms “below” and “under” can encompass both an orientation of above and below. The device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein should be interpreted accordingly. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one of,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list. As used herein, the terms “substantially,” “about,” and similar terms are used as terms of approximation and not as terms of degree, and are intended to account for the inherent deviations in measured or calculated values that would be recognized by those of ordinary skill in the art. Further, the use of “may” when describing embodiments of the present disclosure refers to “one or more embodiments of the present disclosure.” As used herein, the terms “use,” “using,” and “used” may be considered synonymous with the terms “utilize,” “utilizing,” and “utilized,” respectively. Also, the term “exemplary” is intended to refer to an example or illustration. Also, any numerical range recited herein is intended to include all sub-ranges of the same numerical precision subsumed within the recited range. For example, a range of “1.0 to 10.0” is intended to include all subranges between (and including) the recited minimum value of 1.0 and the recited maximum value of 10.0, that is, having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as, for example, 2.4 to 7.6. Any maximum numerical limitation recited herein is intended to include all lower numerical limitations subsumed therein, and any minimum numerical limitation recited in this specification is intended to include all higher numerical limitations subsumed therein. Accordingly, Applicant reserves the right to amend this specification, including the claims, to expressly recite any sub-range subsumed within the ranges expressly recited herein. While one or more embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the appended claims, and equivalents thereof. | 151,868 |
11944007 | DETAILED DESCRIPTION OF THE INVENTION As used in the present disclosure, the following words, phrases, and symbols are generally intended to have the meanings set forth below, except to the extent in which they are used indicates otherwise. The following abbreviations and terms have the indicated meanings throughout: A dash (“-”) that is not between two letters or symbols is used to indicate a point of attachment for a substituent. For example, —CONH2is attached through the carbon atom. “Alkyl” by itself or as part of another substituent refers to a saturated or unsaturated, branched, or straight-chain monovalent hydrocarbon radical derived by the removal of one hydrogen atom from a single carbon atom of a parent alkane, alkene, or alkyne. Examples of alkyl groups include, but are not limited to, methyl; ethyls such as ethenyl, ethenyl, and ethynyl; propyls such as propan-1-yl, propan-2-yl, prop-1-en-1-yl, prop-1-en-2-yl, prop-2-en-1-yl (allyl), prop-1-yn-1-yl, prop-2-yn-1-yl, etc.; butyls such as butan-1-yl, butan-2-yl, 2-methyl-propan-1-yl, 2-methyl-propan-2-yl, but-1-en-1-yl, but-1-en-2-yl, 2-methyl-prop-1-en-1-yl, but-2-en-1-yl, but-2-en-2-yl, buta-1,3-dien-1-yl, buta-1,3-dien-2-yl, but-1-yn-1-yl, but-1-yn-3-yl, but-3-yn-1-yl, etc.; and the like. The term “alkyl” is specifically intended to include groups having any degree or level of saturation, i.e., groups having exclusively single carbon-carbon bonds, groups having one or more double carbon-carbon bonds, groups having one or more triple carbon-carbon bonds, and groups having mixtures of single, double, and triple carbon-carbon bonds. Where a specific level of saturation is intended, the terms “alkanyl,” “alkenyl,” and “alkynyl” are used. In certain embodiments, an alkyl group comprises from 1 to 20 carbon atoms, in certain embodiments, from 1 to 10 carbon atoms, in certain embodiments, from 1 to 8 or 1 to 6 carbon atoms, and in certain embodiments from 1 to 3 carbon atoms. “Amino” refers to the radical —NH2. “Aryl” by itself or as part of another substituent refers to a monovalent aromatic hydrocarbon radical derived by the removal of one hydrogen atom from a single carbon atom of a parent aromatic ring system. Aryl encompasses 5- and 6-membered carbocyclic aromatic rings, for example, benzene; bicyclic ring systems wherein at least one ring is carbocyclic and aromatic, for example, naphthalene, indane, and tetralin; and tricyclic ring systems wherein at least one ring is carbocyclic and aromatic, for example, fluorene. Aryl encompasses multiple ring systems having at least one carbocyclic aromatic ring fused to at least one carbocyclic aromatic ring, cycloalkyl ring, or heterocycloalkyl ring. For example, aryl includes 5- and 6-membered carbocyclic aromatic rings fused to a 5- to 7-membered heterocycloalkyl ring containing one or more heteroatoms chosen from N, O, and S. For such fused, bicyclic ring systems wherein only one of the rings is a carbocyclic aromatic ring, the point of attachment may be at the carbocyclic aromatic ring or the heterocycloalkyl ring. Examples of aryl groups include, but are not limited to, groups derived from aceanthrylene, acenaphthylene, acephenanthrylene, anthracene, azulene, benzene, chrysene, coronene, fluoranthene, fluorene, hexacene, hexaphene, hexalene, as-indacene, s-indacene, indane, indene, naphthalene, octacene, octaphene, octacene, ovalene, penta-2,4-diene, pentacene, pentalene, pentaphene, perylene, phenalene, phenanthrene, picene, pleiadene, pyrene, pyranthrene, rubicene, triphenylene, trinaphthalene, and the like. In certain embodiments, an aryl group can comprise from 5 to 20 carbon atoms, and in certain embodiments, from 5 to 12 carbon atoms. Aryl, however, does not encompass or overlap in any way with heteroaryl, separately defined herein. Hence, a multiple ring system in which one or more carbocyclic aromatic rings is fused to a heterocycloalkyl aromatic ring, is heteroaryl, not aryl, as defined herein. “Carbocyclyl” is intended to include both “aryl” and “cycloalkyl” groups. “Compounds” refers to compounds encompassed by structural formula (I) herein and includes any specific compounds within this formula whose structure is disclosed herein. Compounds may be identified either by their chemical structure and/or chemical name. When the chemical structure and chemical name conflict, the chemical structure is determinative of the identity of the compound. The compounds described herein may contain one or more chiral centers and/or double bonds and therefore may exist as stereoisomers such as double-bond isomers (i.e., geometric isomers), enantiomers, or diastereomers. Accordingly, any chemical structures within the scope of the specification depicted, in whole or in part, with a relative configuration encompass all possible enantiomers and stereoisomers of the illustrated compounds including the stereoisomerically pure form (e.g., geometrically pure, enantiomerically pure, or diastereomerically pure) and enantiomeric and stereoisomeric mixtures. Enantiomeric and stereoisomeric mixtures can be resolved into their component enantiomers or stereoisomers using separation techniques or chiral synthesis techniques well known to the skilled artisan. For the purposes of the present disclosure, “chiral compounds” are compounds having at least one center of chirality (i.e. at least one asymmetric atom, in particular at least one asymmetric C atom), having an axis of chirality, a plane of chirality or a screw structure. “Achiral compounds” are compounds which are not chiral. Compounds of formula (I) include, but are not limited to, optical isomers of compounds of formula (I), racemates thereof, and other mixtures thereof. In such embodiments, the single enantiomers or diastereomers, i.e., optically active forms, can be obtained by asymmetric synthesis or by resolution of the racemates. Resolution of the racemates can be accomplished, for example, by conventional methods such as crystallization in the presence of a resolving agent, or chromatography, using, for example a chiral high-pressure liquid chromatography (HPLC) column. However, unless otherwise stated, it should be assumed that formula (I) covers all asymmetric variants of the compounds described herein, including isomers, racemates, enantiomers, diastereomers, and other mixtures thereof. In addition, compounds of formula (I) include Z- and E-forms (e.g., cis- and trans-forms) of compounds with double bonds. In embodiments in which compounds of Formulas I and IA exist in various tautomeric forms, compounds provided by the present disclosure include all tautomeric forms of the compound. The compounds of formula (I) may also exist in several tautomeric forms including the enol form, the keto form, and mixtures thereof. Accordingly, the chemical structures depicted herein encompass all possible tautomeric forms of the illustrated compounds. Compounds may exist in unsolvated forms as well as solvated forms, including hydrated forms and as N-oxides. In general, compounds may be hydrated, solvated, or N-oxides. Certain compounds may exist in single or multiple crystalline or amorphous forms. In general, all physical forms are equivalent for the uses contemplated herein and are intended to be within the scope provided by the present disclosure. Further, when partial structures of the compounds are illustrated, an asterisk ( ) indicates the point of attachment of the partial structure to the rest of the molecule. “Cycloalkyl” by itself or as part of another substituent refers to a saturated or unsaturated cyclic alkyl radical. Where a specific level of saturation is intended, the nomenclature “cycloalkanyl” or “cycloalkenyl” is used. Examples of cycloalkyl groups include, but are not limited to, groups derived from cyclopropane, cyclobutane, cyclopentane, cyclohexane, and the like. In certain embodiments, a cycloalkyl group is C3-15cycloalkyl, and in certain embodiments, C3-12cycloalkyl or C5-12cycloalkyl. “Heteroaryl” by itself or as part of another substituent refers to a monovalent heteroaromatic radical derived by the removal of one hydrogen atom from a single atom of a parent heteroaromatic ring system. Heteroaryl encompasses multiple ring systems having at least one aromatic ring fused to at least one other ring, which can be aromatic or non-aromatic in which at least one ring atom is a heteroatom. Heteroaryl encompasses 5- to 12-membered aromatic, such as 5- to 7-membered, monocyclic rings containing one or more, for example, from 1 to 4, or in certain embodiments, from 1 to 3, heteroatoms chosen from N, O, and S, with the remaining ring atoms being carbon; and bicyclic heterocycloalkyl rings containing one or more, for example, from 1 to 4, or in certain embodiments, from 1 to 3, heteroatoms chosen from N, O, and S, with the remaining ring atoms being carbon and wherein at least one heteroatom is present in an aromatic ring. For example, heteroaryl includes a 5- to 7-membered heterocycloalkyl, aromatic ring fused to a 5- to 7-membered cycloalkyl ring. For such fused, bicyclic heteroaryl ring systems wherein only one of the rings contains one or more heteroatoms, the point of attachment may be at the heteroaromatic ring or the cycloalkyl ring. In certain embodiments, when the total number of N, S, and O atoms in the heteroaryl group exceeds one, the heteroatoms are not adjacent to one another. In certain embodiments, the total number of N, S, and O atoms in the heteroaryl group is not more than two. In certain embodiments, the total number of N, S, and O atoms in the aromatic heterocycle is not more than one. Heteroaryl does not encompass or overlap with aryl as defined herein. Examples of heteroaryl groups include, but are not limited to, groups derived from acridine, arsindole, carbazole, ÿ-carboline, chromane, chromene, cinnoline, furan, imidazole, indazole, indole, indoline, indolizine, isobenzofuran, isochromene, isoindole, isoindoline, isoquinoline, isothiazole, isoxazole, naphthyridine, oxadiazole, oxazole, perimidine, phenanthridine, phenanthroline, phenazine, phthalazine, pteridine, purine, pyran, pyrazine, pyrazole, pyridazine, pyridine, pyrimidine, pyrrole, pyrrolizine, quinazoline, quinoline, quinolizine, quinoxaline, tetrazole, thiadiazole, thiazole, thiophene, triazole, xanthene, and the like. In certain embodiments, a heteroaryl group is from 5- to 20-membered heteroaryl, and in certain embodiments from 5- to 12-membered heteroaryl or from 5- to 10-membered heteroaryl. In certain embodiments heteroaryl groups are those derived from thiophene, pyrrole, benzothiophene, benzofuran, indole, pyridine, quinoline, imidazole, oxazole, and pyrazine. “Heterocyclyl” by itself or as part of another substituent refers to a partially saturated or unsaturated cyclic alkyl radical in which one or more carbon atoms (and any associated hydrogen atoms) are independently replaced with the same or different heteroatom. Examples of heteroatoms to replace the carbon atom(s) include, but are not limited to, N, P, O, S, Si, etc. Where a specific level of saturation is intended, the nomenclature “heterocycloalkanyl” or “heterocycloalkenyl” is used. Examples of heterocycloalkyl groups include, but are not limited to, groups derived from epoxides, azirines, thiiranes, imidazolidine, morpholine, piperazine, piperidine, pyrazolidine, pyrrolidine, quinuclidine, and the like. “Substituted” refers to a group in which one or more hydrogen atoms are independently replaced with the same or different substituent(s). Examples of substituents include, but are not limited to, —R64, —R60, —O—, (—OH), ═O, —OR60, —SR60, —S—, ═S, —NR60R61, ═NR60, —CX3, —CN, —CF3, —OCN, —SCN, —NO, —NO2, ═N2, —N3, —S(O)2O—, —S(O)2OH, —S(O)2R60, —OS(O2)O—, —OS(O)2R60, —P(O)(O—)2, —P(O)(OR60)(O—), —OP(O)(OR60)(OR61), —C(O)R60, —C(S)R60, —C(O)OR60, —C(O)NR60R61, —C(O)O—, —C(S)OR60, —NR62C(O)NR60R61, —NR62C(S)NR60R61, —NR62C(NR63)NR60R61, —C(NR62)NR60R61, —S(O)2, NR60R61, —NR63S(O)2R60, —NR63C(O)R60, and —S(O)R60where each —R64is independently a halogen; each R60and R61are independently hydrogen, alkyl, substituted alkyl, alkoxy, substituted alkoxy, cycloalkyl, substituted cycloalkyl, heterocycloalkyl, substituted heterocycloalkyl, aryl, substituted aryl, heteroaryl, substituted heteroaryl, arylalkyl, substituted arylalkyl, heteroarylalkyl, or substituted heteroarylalkyl, or R60and R61together with the nitrogen atom to which they are bonded to form a heterocyclyl, substituted heterocyclyl, heteroaryl, or substituted heteroaryl ring, and R62and R63are independently hydrogen, alkyl, substituted alkyl, aryl, substituted aryl, arylalkyl, substituted arylalkyl, cycloalkyl, substituted cycloalkyl, heterocyclyl, substituted heterocyclyl, heteroaryl, substituted heteroaryl, or heteroarylalkyl, or R62and R63together with the atom to which they are bonded form one or more heterocyclyl, substituted heterocyclyl, heteroaryl, or substituted heteroaryl rings. In certain embodiments, a tertiary amine or aromatic nitrogen may be substituted with one or more oxygen atoms to form the corresponding nitrogen oxide. As used in this specification and the appended claims, the articles “a,” “an,” and “the” include plural referents unless expressly and unequivocally limited to one referent. All numerical ranges herein include all numerical values and ranges of all numerical values within the recited range of numerical values. Further, while the numerical ranges and parameters setting forth the broad scope of the disclosure are approximations as discussed above, the numerical values set forth in the Examples section are reported as precisely as possible. It should be understood, however, that such numerical values inherently contain certain errors resulting from the measurement equipment and/or measurement technique. In some embodiments, the compounds described herein may comprise squaraine compounds represented by the following graphic formula (I): wherein,Y1and Y2are independently selected from an optionally substituted amino group or an optionally substituted aryl group. In some embodiments, the compounds are asymmetric, i.e., Y1and Y2are different. In some embodiments, Y1and Y2are independently selected from —NR3R4and a group of formula II: wherein X for each occurrence is independently selected from hydrogen and hydroxyl;R1and R2for each occurrence are independently selected from optionally substituted alkyl, optionally substituted aryl, and optionally substituted heteroaryl, or R1and R2are taken together with any intervening atoms to form a group selected from optionally substituted heteroaryl and optionally substituted heterocyclyl; andR3and R4for each occurrence are independently selected from optionally substituted alkyl, optionally substituted aryl, and optionally substituted heteroaryl, or R3and R4are taken together with any intervening atoms to form a group selected from optionally substituted heteroaryl and optionally substituted heterocyclyl. In some embodiments, said optionally substituted heteroaryl and the optionally substituted heterocyclyl are independently selected from monocyclic and multicyclic groups. In some embodiments, the multicyclic group comprises two or more fused rings. In some embodiments, at least one of R3and R4comprise an aryl group. As used herein, amino and substituted amino groups are intended to include any salts, such as acid addition salts, thereof. For example, any reference to an amine also contemplates the ammonium salt and any reference to or embodiment of the group NR1R2should be construed to include analogous salts such as acid addition salts, etc. In yet another embodiment, a compound of formula (I) is selected, with the proviso that when at least one of Y1and Y2comprises the group of formula (II), R1and R2are taken together with any intervening atoms to form a group selected from optionally substituted heteroaryl and optionally substituted heterocyclyl. In some embodiments, the group of formula (II) is chosen from the group of formula (III): whereinW is selected from S, O, Se, and Te;n is an integer selected from 0 and 1; andR5and R6for each occurrence are independently selected from optionally substituted amino, cyano, halo, mercapto, optionally substituted alkenyl, optionally substituted alkynyl, optionally substituted alkyl, optionally substituted aryl, and optionally substituted heteroaryl, optionally substituted heterocyclyl, and optionally substituted carbocyclyl, or R5and R6attached to adjacent atoms are taken together with any intervening atoms to form a group selected from optionally substituted aryl, optionally substituted heteroaryl, optionally substituted carbocyclyl, and optionally substituted heterocyclyl. In another embodiment, a compound of formula (I) is selected, whereinY1comprises —NR3R4; andY2comprises In some embodiments, at least one of Y1and Y2comprises In some embodiments, at least one X comprises hydroxyl. In some embodiments, at least one of Y1and Y2comprises —NR3R4. In still another embodiment, a compound of formula (I) is selected, wherein Y1is —NR3R4and Y2is optionally substituted aryl, whereinR3and R4are independently selected from optionally substituted alkyl, optionally substituted aryl, and optionally substituted heteroaryl, or R3and R4are taken together with any intervening atoms to form a group selected from optionally substituted heteroaryl and optionally substituted heterocyclyl. In some embodiments, Y1comprises an optionally substituted aryl, andY2is whereinX for each occurrence is independently selected from hydrogen and hydroxyl; andR1and R2for each occurrence are independently selected from optionally substituted alkyl, optionally substituted aryl, and optionally substituted heteroaryl, or R1and R2are taken together with any intervening atoms to form a group selected from optionally substituted heteroaryl and optionally substituted heterocyclyl. It is appreciated that the squaraine compound of formula I may or may not be symmetric. As used herein, the term “symmetric” is intended to include compounds with a point group symmetry of an order higher than the Cssymmetry group. In some embodiments, the compound of formula (I) is amorphous. In some embodiments, the compound of formula (I) is selected from 2,4-bis[4-N-carbazolo-2,6-dihydroxyphenyl] squaraine (CBZSQ), 2,4-bis[4-N-phenothiazino-2,6-dihydroxyphenyl] squaraine (PTSQ), 2,4-bis[4-(N,N-diphenylamino)-2,6-dihydroxyphenyl] squaraine (DPSQ), 2,4-bis[4-(N-Phenyl-1-naphthylamino)-2,6-dihydroxyphenyl] squaraine (1NPSQ), 2,4-bis[4-(N-Phenyl-2-naphthylamino)-2,6-dihydroxyphenyl] squaraine (2NPSQ), {2-[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl]-4-diphenylamino} squaraine (USSQ), {2-[4-(N,N-diphenylamino)-2,6-dihydroxyphenyl]-4-diphenylamino} squaraine (DPUSQ), and diphenylamino-squarate (YSQ). In all of the foregoing examples, the compounds described herein may be useful alone, as mixtures, or in combination with other compounds, compositions, and/or materials. Methods for obtaining the novel compounds described herein will be evident to those of ordinary skill in the art, suitable procedures being described, for example, in the reaction schemes and examples below. Scheme 1 depicts a method of preparing symmetric aryl squaraines in two steps. The aryl aniline was synthesized by Buchwald reaction with yields of about 90% of the desired diaryl amine. Exemplary reactions are described in Son et al.,Poly. Sci. Part A: Polym. Chem.,48: 635 (2009). The methoxy groups of the intermediate were deprotected using BBr3to provide the corresponding hydroxyl-substituted arylaniline. The arylaniline is then reacted with squaric acid under N2overnight to yield the crude product, which was purified by recrystallization twice from DCM and methanol to provide the desired squaraine product in about 50% yield. Scheme 2 depicts a method of preparing unsymmetrical aryl-amino squaraines. Diarylaminosquarate was first synthesized by reacting 3,4-disopropoxycyclobut-3-ene-1,2-dione with diarylamine in propan-2-ol, followed by hydrolysis of the intermediate with HCl. The diarylaminosquarate is then reacted with a hydroxyl-substituted arylamine to yield the resulting squaraine. Scheme 3 depicts a method of preparing asymmetric aryl squaraines, 3,4-disopropoxycyclobut-3-ene-1,2-dione is reacted with the aryllithium compound in THF at −78° C. After quenching the mixture with water, the arylsquarate intermediate is extracted with DCM, and subsequently hydrolyzed with HCl to form the arylsquarate. The asymmetric diarylsquaraine product is obtained by reacting the arylsquarate intermediate with the desired hydroxyl-substituted arylamine. In some embodiments, the squaraine compounds described herein may be used in the preparation of organic photosensitive optoelectronic devices. In some embodiments, the organic photosensitive optoelectronic devices described herein have at least one donor-acceptor heterojunction comprising at least one compound of formula (I): wherein:Y1and Y2are independently selected from an optionally substituted amino group and an optionally substituted aryl group. In one embodiment, the squaraine is asymmetric, i.e, Y1and Y2are different. The organic optoelectronic devices of the embodiments of described herein may be used, for example, to generate a usable electrical current from incident electromagnetic radiation (e.g., PV devices) or may be used to detect incident electromagnetic radiation. In some embodiments, the devices described herein may be prepared by forming a photoactive region comprising at least one donor-acceptor heterojunction having at least one compound of formula (I). The photoactive region is the portion of the photosensitive device that absorbs electromagnetic radiation to generate excitons that may dissociate in order to generate an electrical current. In some embodiments, the device is a solar cell and the donor-acceptor heterojunction is formed at an interface of a donor material comprising at least one compound of formula (I) and an acceptor material. Embodiments of the devices described herein may comprise an anode, a cathode, and a photoactive region between the anode and the cathode. Organic photosensitive optoelectronic devices may also include at least one transparent electrode to allow incident radiation to be absorbed by the device. Several PV device materials and configurations are described in the following U.S. Pat. Nos. 6,657,378; 6,580,027; and 6,352,777, all three of which are incorporated herein by reference in their entirety. FIG.1shows an organic photosensitive optoelectronic device100. The figures are not necessarily drawn to scale. Device100may include a substrate110, an anode115, an anode smoothing layer120, a donor layer125, an acceptor layer130, a blocking layer135, and a cathode140. Cathode140may be a compound cathode having a first conductive layer and a second conductive layer. Device100may be fabricated by depositing the layers described, in order. Charge separation may occur predominantly at the organic heterojunction between donor layer125and acceptor layer130. The built-in potential at the heterojunction is determined by the HOMO-LUMO energy level difference between the two materials contacting to form the heterojunction. The HOMO-LUMO gap offset between the donor and acceptor materials produces an electric field at the donor/acceptor interface that facilitates charge separation for excitons created within an exciton diffusion length of the interface. The specific arrangement of layers illustrated inFIG.1is exemplary only, and is not intended to be limiting. For example, some of the layers (such as blocking layers) may be omitted. Other layers (such as reflective layers or additional acceptor and donor layers) may be added. The order of layers may be altered. Arrangements other than those specifically described may be used. The substrate may be any suitable substrate that provides desired structural properties. The substrate may be flexible or rigid, planar or non-planar. The substrate may be transparent, translucent or opaque. Plastic and glass are examples of rigid substrate materials that may be used herein. Plastic and metal foils are examples of flexible substrate materials that may be used according to the present disclosure. The material and thickness of the substrate may be chosen to obtain desired structural and optical properties. U.S. Pat. No. 6,352,777, incorporated herein by reference, provides examples of electrodes, or contacts, that may be used in a photosensitive optoelectronic device. When used herein, the terms “electrode” and “contact” refer to layers that provide a medium for delivering photo-generated current to an external circuit or providing a bias voltage to the device. That is, an electrode, or contact, provides the interface between the active regions of an organic photosensitive optoelectronic device and a wire, lead, trace or other means for transporting the charge carriers to or from the external circuit. In a photosensitive optoelectronic device, it is desirable to allow the maximum amount of ambient electromagnetic radiation from the device exterior to be admitted to the photoconductively active interior region. That is, the electromagnetic radiation must reach a photoconductive layer(s), where it can be converted to electricity by photoconductive absorption. This often dictates that at least one of the electrical contacts should be minimally absorbing and minimally reflecting of the incident electromagnetic radiation. That is, such a contact should be substantially transparent. The opposing electrode may be a reflective material so that light which has passed through the cell without being absorbed is reflected back through the cell. As used herein, a layer of material or a sequence of several layers of different materials is said to be “transparent” when the layer or layers permit at least 50% of the ambient electromagnetic radiation in relevant wavelengths to be transmitted through the layer or layers. Similarly, layers which permit some, but less that 50% transmission of ambient electromagnetic radiation in relevant wavelengths are said to be “semi-transparent.” As used herein, “top” means farthest away from the substrate, while “bottom” means closest to the substrate. For example, for a device having two electrodes, the bottom electrode is the electrode closest to the substrate, and is generally the first electrode fabricated. The bottom electrode has two surfaces, a bottom surface closest to the substrate, and a top surface further away from the substrate. Where a first layer is described as “disposed over” a second layer, the first layer is disposed further away from substrate. There may be other layers between the first and second layer, unless it is specified that the first layer is “in physical contact with” the second layer. For example, a cathode may be described as “disposed over” an anode, even though there are various organic layers in between. In one embodiment, the electrodes are composed of metals or “metal substitutes”. Herein the term “metal” is used to embrace both materials composed of an elementally pure metal, e.g., Mg, Ag, Au, or Al, and also metal alloys which are materials composed of two or more elementally pure metals, e.g., Mg and Ag together, denoted Mg:Ag. Here, the term “metal substitute” refers to a material that is not a metal within the normal definition, but which has the metal-like properties that are desired in certain appropriate applications. Commonly used metal substitutes for electrodes and charge transfer layers would include doped wide-bandgap semiconductors, for example, transparent conducting oxides. Transparent conductive polymers may also be used. Non-limiting transparent conducting oxides include indium tin oxide (ITO), tin oxide (TO), gallium indium tin oxide (GITO), zinc oxide (ZO), and zinc indium tin oxide (ZITO), glass and transparent conductive polymers. Exemplary transparent conductive polymers include, for example, polyaniline (PANI). ITO is a highly doped degenerate n+ semiconductor with an optical bandgap of approximately 3.2 eV, rendering it transparent to wavelengths greater than approximately 390 nm. Another suitable metal substitute is the transparent conductive polymer polyaniline (PANI) and its chemical relatives. Metal substitutes may be further selected from a wide range of non-metallic materials, wherein the term “non-metallic” is meant to embrace a wide range of materials provided that the material is free of metal in its chemically uncombined form. When a metal is present in its chemically uncombined form, either alone or in combination with one or more other metals as an alloy, the metal may alternatively be referred to as being present in its metallic form or as being a “free metal”. Thus, the metal substitute electrodes of the present invention may sometimes be referred to as “metal-free” wherein the term “metal-free” is expressly meant to embrace a material free of metal in its chemically uncombined form. Free metals typically have a form of metallic bonding that results from a sea of valence electrons which are free to move in an electronic conduction band throughout the metal lattice. While metal substitutes may contain metal constituents they are “non-metallic” on several bases. They are not pure free-metals nor are they alloys of free-metals. When metals are present in their metallic form, the electronic conduction band tends to provide, among other metallic properties, a high electrical conductivity as well as a high reflectivity for optical radiation. Embodiments of the present disclosure may include, as one or more of the transparent electrodes of the photosensitive optoelectronic device, a highly transparent, non-metallic, low resistance cathode such as disclosed in U.S. Pat. No. 6,420,031, to Parthasarathy et al. (“Parthasarathy '031”), or a highly efficient, low resistance metallic/non-metallic compound cathode such as disclosed in U.S. Pat. No. 5,703,436 to Forrest et al. (“Forrest '436”), both incorporated herein by reference in their entirety. Each type of cathode may be prepared in a fabrication process that includes sputter depositing an ITO layer onto either an organic material, such as copper phthalocyanine (CuPc), to form a highly transparent, non-metallic, low resistance cathode or onto a thin Mg:Ag layer to form a highly efficient, low resistance metallic/non-metallic compound cathode. Parthasarathy '031 discloses that an ITO layer onto which an organic layer had been deposited, instead of an organic layer onto which the ITO layer had been deposited, does not function as an efficient cathode. For PVs the ITO would be deposited onto the substrate, unless the layers were being deposited in the reverse orientation. In addition to CuPc, an organic compound that facilitates the formation of crystalline or amorphous films (such as, e.g., NPD) may be utilized as a hole transporting material between the anode (e.g., ITO) and the squaraine. The organic film-facilitating compound does not contribute to photon absorption and has suitable energetics with squaraines such as SQ. When used in concert with C60, the presence of a layer of an organic film-facilitating compound may ensure that the C60is not be in contact with the ITO, thus preventing loss of C60inherent photocurrent. Additionally, an organic film-facilitating compound does not trap charge according to its well known good hole mobility. Herein, the term “cathode” is used in the following manner. In a non-stacked PV device or a single unit of a stacked PV device under ambient irradiation and connected with a resistive load and with no externally applied voltage, e.g., a PV device, electrons move to the cathode from the photo-conducting material. Similarly, the term “anode” is used herein such that in a PV device under illumination, holes move to the anode from the photo-conducting material, which is equivalent to electrons moving in the opposite manner. It will be noted that as the terms are used herein, anodes and cathodes may be electrodes or charge transfer layers. An organic photosensitive device will comprise at least one photoactive region in which light is absorbed to form an excited state, or “exciton”, which may subsequently dissociate into an electron and a hole. The dissociation of the exciton will typically occur at the heterojunction formed by the juxtaposition of an acceptor layer and a donor layer. For example, in the device ofFIG.1, the “photoactive region” may include donor layer125and acceptor layer130. In some embodiments, the donor layer may comprise at least one compound of formula (I): wherein:(a) Y1and Y2are independently selected from a substituted amino group or a substituted aryl group, or(b) Y1and Y2are independently selected from an optionally substituted amino group or an optionally substituted aryl group, wherein the squaraine compound is not symmetric. In some embodiments, the organic photosensitive optoelectronic devices described herein may comprise at least two different squaraines to provide more efficient light harvesting at wavelengths ranging from 500 to 850 nm, when compared to a donor-acceptor heterojunction comprising, at most, one squaraine. Such squaraine compounds may be used alone or in addition to other donor materials. All references to compounds of formula (I), including, for example, the devices and methods comprising compounds of formula (I) are intended to encompass any salts or derivatives of these compounds. For example, one of skill in the art will recognize that a compound of formula (I) may be present in a ketone or alcohol form rather than the charge separated form depicted. The acceptor material may be comprised of, for example, perylenes, naphthalenes, fullerenes or nanotubules. Exemplary acceptor materials include C60, C70, C84, 3,4,9,10-perylenetracarboxylic dianhydride (PTCDA), 3,4,9,10-perylenetracarboxylic diimide (PTCDI), 3,4,9,10-perylenetetracarboxylic-bis-benzimidazole (PTCBI), 1,4,5,8-naphthalenetetracarboxylic dianhydride (NTCDA), copper phthalocyanine (CuPc), and copper-hexadecafluoro-phthalocyanine (F16—CuPc). In one embodiment, the stacked organic layers include one or more exciton blocking layers (EBLs) as described in U.S. Pat. No. 6,097,147, Peumans et al,Applied Physics Letters2000, 76, 2650-52, and co-pending application Ser. No. 09/449,801, filed Nov. 26, 1999, both incorporated herein by reference. Higher internal and external quantum efficiencies have been achieved by the inclusion of an EBL to confine photogenerated excitons to the region near the dissociating interface and to prevent parasitic exciton quenching at a photosensitive organic/electrode interface. In addition to limiting the volume over which excitons may diffuse, an EBL can also act as a diffusion barrier to substances introduced during deposition of the electrodes. In some circumstances, an EBL can be made thick enough to fill pinholes or shorting defects which could otherwise render an organic PV device non-functional. An EBL can therefore help protect fragile organic layers from damage produced when electrodes are deposited onto the organic materials. EBLs can also function as optical spacers that allow for the focusing of optical field peaks in the active area of the cell. Exemplary electron or exciton blocking materials include, for example, bathocuproine (BCP), bathophenanthroline (BPhen), 3,4,9,10-perylenetetracarboxylicbis-benzimidazole (PTCBI), 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBi), tris(acetylacetonato) ruthenium(III) (RuAcaca3), and aluminum(III)phenolate (Alq2OPH). In some embodiments, the EBL is situated between the acceptor layer and the cathode. It is believed that the EBLs derive their exciton blocking property from having a LUMO-HOMO energy gap substantially larger than that of the adjacent organic semiconductor from which excitons are being blocked. Thus, the confined excitons are prohibited from existing in the EBL due to energy considerations. While it is desirable for the EBL to block excitons, it is not desirable for the EBL to block all charge. However, due to the nature of the adjacent energy levels, an EBL may block one sign of charge carrier. By design, an EBL will exist between two other layers, usually an organic photosensitive semiconductor layer and an electrode or charge transfer layer or charge recombination layers. The adjacent electrode or charge transfer layer will be in context either a cathode or an anode. Therefore, the material for an EBL in a given position in a device will be chosen so that the desired sign of carrier will not be impeded in its transport to or from the electrode or charge transfer layer. Proper energy level alignment ensures that no barrier to charge transport exists, preventing an increase in series resistance. For example, it is desirable for a material used as a cathode side EBL to have a LUMO energy level closely matching the LUMO energy level of the adjacent ETL material so that any undesired barrier to electrons is minimized. It should be appreciated that the exciton blocking nature of a material is not an intrinsic property of its HOMO-LUMO energy gap. Whether a given material will act as an exciton blocker depends upon the relative HOMO and LUMO energy levels of the adjacent organic photosensitive material. Therefore, it is not possible to identify a class of compounds in isolation as exciton blockers without regard to the device context in which they may be used. However, with the teachings herein one of ordinary skill in the art may identify whether a given material will function as an exciton blocking layer when used with a selected set of materials to construct an organic PV device. Optionally, the EBL layer may be doped with a suitable dopant, including but not limited to 3,4,9,10-perylenetracarboxylic dianhydride (PTCDA), 3,4,9,10-perylenetracarboxylic diimide (PTCDI), 3,4,9,10-perylenetetracarboxylic-bis-benzimidazole (PTCBI), 1,4,5,8-naphthalenetetracarboxylic dianhydride (NTCDA), and derivatives thereof. It is thought that the BCP as deposited in the present devices is amorphous. The present apparently amorphous BCP exciton blocking layers may exhibit film recrystallization, which is especially rapid under high light intensities. The resulting morphology change to polycrystalline material results in a lower quality film with possible defects such as shorts, voids or intrusion of electrode material. Accordingly, it has been found that doping of some EBL materials, such as BCP, that exhibit this effect with a suitable, relatively large and stable molecule can stabilize the EBL structure to prevent performance degrading morphology changes. It should be further appreciated that doping of an EBL which is transporting electrons in a given device with a material having a LUMO energy level close to that of the EBL will help insure that electron traps are not formed which might produce space charge build-up and reduce performance. Additionally, it should be appreciated that relatively low doping densities should minimize exciton generation at isolated dopant sites. Since such excitons are effectively prohibited from diffusing by the surrounding EBL material, such absorptions reduce device photoconversion efficiency. Representative embodiments may also comprise transparent charge transfer layers or charge recombination layers. As described herein, “charge transfer layers” are distinguished from acceptor and donor layers by the fact that charge transfer layers are frequently, but not necessarily, inorganic (often metals) and they may be chosen not to be photoconductively active. The term “charge transfer layer” is used herein to refer to layers similar to but different from electrodes in that a charge transfer layer only delivers charge carriers from one subsection of an optoelectronic device to the adjacent subsection. The term “charge recombination layer” is used herein to refer to layers similar to but different from electrodes in that a charge recombination layer allows for the recombination of electrons and holes between adjacent charge carrier layers and may also enhance internal optical field strength near one or more active layers. A charge recombination layer can be constructed of semi-transparent metal nanoclusters, nanoparticle or nanorods as described in U.S. Pat. No. 6,657,378, incorporated herein by reference in its entirety. In some embodiments, an anode-smoothing layer may be situated between the anode and the donor layer. One material for this layer comprises a film of 3,4-polyethylenedioxythiophene:polystyrenesulfonate (PEDOT:PSS). The introduction of the PEDOT:PSS layer between the anode (ITO) and the donor layer (CuPc) may lead to greatly improved fabrication yields. Without being bound by any particular theory, it is believed that the improved fabrication yields is a result of the ability of the spin-coated PEDOT:PSS film to planarize the ITO, whose rough surface could otherwise result in shorts through the thin molecular layers. In a further embodiment, one or more of the layers may be treated with plasma prior to depositing the next layer. The layers may be treated, for example, with a mild argon or oxygen plasma. This treatment may help to reduce the series resistance. It is particularly advantageous that the PEDOT:PSS layer be subject to a mild plasma treatment prior to deposition of the next layer. The simple layered structure illustrated inFIG.1is provided by way of non-limiting example, and it is understood that embodiments of the invention may be used in connection with a wide variety of other structures. The specific materials and structures described are exemplary in nature, and other materials and structures may be used. Functional organic photosensitive optoelectronic devices may be achieved by combining the various layers described in different ways, or layers may be omitted entirely, based on design, performance, and cost factors. Other layers not specifically described may also be included. Materials other than those specifically described may be used. Although many of the examples provided herein describe various layers as comprising a single material, it is understood that combinations of materials, such as a mixture of host and dopant, or more generally a mixture, may be used. Also, the layers may have various sublayers. The names given to the various layers herein are not intended to be strictly limiting. Organic layers that are not a part of the photoactive region, i.e., organic layers that generally do not absorb photons that make a significant contribution to photocurrent, may be referred to as “non-photoactive layers.” Examples of non-photoactive layers include EBLs and anode-smoothing layers. Other types of non-photoactive layers may also be used. Non-limiting examples of organic materials for use in the photoactive layers of a photosensitive device include cyclometallated organometallic compounds. The term “organometallic” as used herein is as generally understood by one of ordinary skill in the art and as given, for example, in “Inorganic Chemistry” (2nd Edition) by Gary L. Miessler and Donald A. Tarr, Prentice Hall (1998). Thus, the term organometallic refers to compounds which have an organic group bonded to a metal through a carbon-metal bond. This class does not include per se coordination compounds, which are substances having only donor bonds from heteroatoms, such as metal complexes of amines, halides, pseudohalides (CN, etc.), and the like. In practice, organometallic compounds generally comprise, in addition to one or more carbon-metal bonds to an organic species, one or more donor bonds from a heteroatom. The carbon-metal bond to an organic species refers to a direct bond between a metal and a carbon atom of an organic group, such as phenyl, alkyl, alkenyl, etc., but does not refer to a metal bond to an “inorganic carbon,” such as the carbon of CN or CO. The term cyclometallated refers to compounds that comprise an bidentate organometallic ligand so that, upon bonding to a metal, a ring structure is formed that includes the metal as one of the ring members. Organic layers may be fabricated using vacuum deposition, spin coating, organic vapor-phase deposition, inkjet printing and other methods known in the art. In some embodiments, the donor-acceptor heterojunction is disposed over a substrate. The organic photosensitive optoelectronic device described herein may be prepared, for example, by depositing the at least one compound of formula (I) by one or more processes chosen from vacuum deposition and solution processing. Solution processing may comprise one or more technique chosen from spin coating, spray coating, dip coating, or doctor's blading. In some embodiments, the squaraine compounds may be sublimed during vacuum deposition one or more times. As used herein, sublimation may include but is not limited to vacuum deposition. Accordingly, sublimation may be carried out at any temperature and pressure suitable for depositing the materials. Subliming the squaraine compounds may afford certain benefits regarding purification. Subliming squaraines one or more times may provide amorphous films and better properties than non-sublimed films. While not being bound by any theory, it is believed that multiple sublimation steps act as purification steps, for example, to remove trapping impurities otherwise present, whether the resulting film is amorphous or crystalline. In one embodiment, the squaraine compound of formula (I) is deposited at a rate ranging from 0.1 to 1.5 Å/sec, such as 0.2 to 1.0 Å/sec, or even 0.2 to 0.6 Å/sec. In one embodiment, the deposited squaraine compound of formula (I) has a thickness of 100 Å or less, such as 65 Å or less, even 50 Å or less. As used herein the “thickness” refers to the thickness of the layer (e.g., the thickness of the layer of the squaraine compound) as opposed to the molecular characteristics (e.g., bond distances) of materials that form any given layer. It should be appreciated that the squaraine materials described herein can be a good donor in any device architecture. Non-limiting mention is made to the squaraine material being used in an architectural arrangement chosen from planar, bulk heterojunctions, hybrid-planar mixed, nanocrystalline bulk heterojunctions, and the like. In some embodiments, this material may be a good donor toward C50in any device architecture. In other embodiments, the squaraines described herein may also be a good donor for other acceptors. In addition, if the energies are chosen correctly and it transports electrons, the disclosed squaraines could even be an acceptor for a given donor, again in a range of device architectures, such as those previously mentioned. It is to be appreciated that the heterojunction according to the present disclosure may comprise at least two different squaraine compounds described herein, such as mixture of two different squaraines. Thus, there are also described methods of making such a device comprising a mixture of two, or more different squaraines. In one embodiment, the deposited squaraine compound forms a discontinuous layer. As used herein, the term “discontinuous layer” is intended to mean a layer (e.g., a layer of a squaraine compound) that does not have a uniform thickness throughout the layer. In one embodiment, the discontinuous layer of the invention is a layer that does not completely cover all portions of the layer (or substrate) onto which it was deposited, thereby resulting in some portions of that layer being exposed after depositing the discontinuous layer. In another embodiment, the deposited squaraine compound forms isolated nanoscale domains. As used herein “isolated nanoscale domains” is used to contrast uniform thin film, and thus refers to a portion of the deposited squaraine compound that exists as 1-50 nm domains, forming a discontinuous thin film. In one embodiment, C60is deposited such that it is in contact with the squaraine compound in the organic photosensitive optoelectronic device. In another embodiment the squaraine layer is ultrathin, such that the C60has direct contact with the substrate. The organic photosensitive optoelectronic devices described herein may function as a device or solar cell, photodetector or photoconductor. Whenever the organic photosensitive optoelectronic devices function as a PV device, the materials used in the photoconductive organic layers and the thicknesses thereof may be selected, for example, to optimize the external quantum efficiency of the device. Whenever the organic photosensitive optoelectronic devices function as photodetectors or photoconductors, the materials used in the photoconductive organic layers and the thicknesses thereof may be selected, for example, to maximize the sensitivity of the device to desired spectral regions. This result may be achieved by considering several guidelines that may be used in the selection of layer thicknesses. It is desirable for the exciton diffusion length, LD, to be greater than or comparable to the layer thickness, L, since it is believed that most exciton dissociation will occur at an interface. If LDis less than L, then many excitons may recombine before dissociation. It is further desirable for the total photoconductive layer thickness to be of the order of the electromagnetic radiation absorption length, 1/α, where α is the absorption coefficient, so that nearly all of the radiation incident on the PV device is absorbed to produce excitons. Furthermore, the photoconductive layer thickness should be as thin as possible to avoid excess series resistance due to the high bulk resistivity of organic semiconductors. Accordingly, these competing guidelines inherently require tradeoffs to be made in selecting the thickness of the photoconductive organic layers of a photosensitive optoelectronic cell. Thus, on the one hand, a thickness that is comparable or larger than the absorption length is desirable (for a single cell device) in order to absorb the maximum amount of incident radiation. On the other hand, as the photoconductive layer thickness increases, two undesirable effects are increased. One is that due to the high series resistance of organic semiconductors, an increased organic layer thickness increases device resistance and reduces efficiency. Another undesirable effect is that increasing the photoconductive layer thickness increases the likelihood that excitons will be generated far from the effective field at a charge-separating interface, resulting in enhanced probability of geminate recombination and, again, reduced efficiency. Therefore, a device configuration is desirable which balances between these competing effects in a manner that produces a high external quantum efficiency for the overall device. As noted, the organic photosensitive optoelectronic devices described herein may function as photodetectors. In this embodiment, the device may be a multilayer organic device, for example as described in U.S. Pat. No. 6,972,431, incorporated herein by reference in its entirety. In this case an external electric field may be generally applied to facilitate extraction of the separated charges. A concentrator or trapping configuration may be employed to increase the efficiency of the organic photosensitive optoelectronic device, where photons are forced to make multiple passes through the thin absorbing regions. U.S. Pat. Nos. 6,333,458 and 6,440,769, incorporated herein by reference in their entirety, addresses this issue by using structural designs that enhance the photoconversion efficiency of photosensitive optoelectronic devices by optimizing the optical geometry for high absorption and for use with optical concentrators that increase collection efficiency. Such geometries for photosensitive devices substantially increase the optical path through the material by trapping the incident radiation within a reflective cavity or waveguiding structure, and thereby recycling light by multiple reflections through the photoresponsive material. The geometries disclosed in U.S. Pat. Nos. 6,333,458 and 6,440,769 therefore enhance the external quantum efficiency of the devices without causing substantial increase in bulk resistance. Included in the geometry of such devices is a first reflective layer; a transparent insulating layer which should be longer than the optical coherence length of the incident light in all dimensions to prevent optical microcavity interference effects; a transparent first electrode layer adjacent the transparent insulating layer; a photosensitive heterostructure adjacent the transparent electrode; and a second electrode which is also reflective. In one embodiment, one or more coatings may be used to focus optical energy into desired regions of a device. See, e.g., U.S. Pat. No. 7,196,835, the disclosures of which, specifically related to such coatings, are herein incorporated by reference. Various devices made according to the foregoing disclosures were made and tested. Results of these tests are provided in Tables 1 and 2, below. TABLE 1Extinction coefficients of aryl squarainesSquarainesΛmax(nm)Extinction coefficient (cm−1M−1)SQ6524.09 × 105DPSQ6741.94 × 1051-NPSQ6662.04 × 1052-NPSQ6871.94 × 105 TABLE 2aPhotophysics data of SQ-ME in select solvents.SolventStoke shift(nm)Quantum yield (%)MeCN15732MeTHF1177Toluene1180Cyclohexane881 TABLE 2bPhotophysics data of aryl squaraines in select solvents.StokeStokeStokeShiftQuantumShiftQuantumShiftQuantum(nm)Yield(nm)Yield(nm)YieldSolventDPSQ1-NPSQ2-NPSQ2MeTHF790.5155.5120.1Toluene7928.76136806.5Cyclohexane5655.16410.1 TABLE 2cPhotophysics data of asymmetric aryl squaraines in select solvents.Stoke ShiftQuantumStoke ShiftQuantum(nm)Yield(nm)YieldSolventDPSQ1-NPSG2MeTHF530.41001.1Toluene806.5580.9Cyclohexane6410.1350.3 The embodiments described herein are further illustrated by the following non-limiting examples: Example 1 CBZSQ: 2,4-bis[4-N-carbazolo-2,6-dihydroxyphenyl] squaraine 1H-NMR (CDCl3, 500 MHz): 8.51 (s, 2H), 7.99 (d, 2H), 7.53 (d, 1H), 7.32 (m, 2H), 7.21 (m, 2H), 7.01 (m, 2H), 6.67 (s, 2H) Example 2 DPSQ: 2,4-bis[4-(N,N-diphenylamino)-2,6-dihydroxyphenyl] squaraine 1H-NMR (CDCl3, 500 MHz): 10.1 (s, 1H), 7.41 (t, 2H, J=7.5 Hz), 7.29 (t, 1H, J=5 Hz), 7.23 (d, 2H, J=5 Hz), 5.87 (s, 1H) 13C-NMR (CDCl3, 500 MHz): 31.29, 50.78, 98.75, 104.96, 127.57, 129.81, 144.08, 159.51, 163.06, 181.36 MS: m/z 632.2 (MH+). Example 3 1NPSQ: 2,4-bis[4-(N-Phenyl-1-naphthylamino)-2,6-dihydroxyphenyl] squaraine 1H-NMR (CDCl3, 400 MHz): 10.90 (s, 2H), 7.81-7.88 (, 3H), 7.44-7.48 (m, 3H), 7.26-7.29 (m, 4H), 5.71 (s, 2H). MS: m/z 732.2 (M+-CH3). Example 4 2NPSQ: 2,4-bis[4-(N-Phenyl-2-naphthylamino)-2,6-dihydroxyphenyl] squaraine 1H-NMR (CDCl3, 400 MHz): 10.95 (s, 2H), 7.79-7.83 (m, 2H), 7.61-7.71 (m, 2H), 7.45-7.47 (m, 2H), 7.27-7.38 (m, 4H), 5.89 (s, 2H). Elemental analysis for C48H36N2O6: calcd: C, 78.68, H, 4.4, N, 3.82. found: C, 78.74, H, 4.33, N, 3.84. Example 5 USSQ: {2-[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl]-4-diphenylamino} squaraine 1H-NMR (CDCl3, 400 MHz): 12.02 (s, 2H), 7.45-7.51 (m, 4H), 7.38-7.42 (m, 2H), 7.23-7.26 (m, 4H), 5.78 (s, 2H), 3.23 (d, 2H, J=8 Hz), 2.13 (m, 2H), 0.93 (d, 12H, J=6.8 Hz). Elemental analysis for C30H32N2O4: calcd: C, 74.36, H, 6.66, N, 5.78. found: C, 74.33, H, 6.75, N, 5.8. Example 6 DPUSQ: {2-[4-(N,N-diphenylamino)-2,6-dihydroxyphenyl]-4-diphenylamino} squaraine 1H-NMR (CDCl3, 500 MHz): 11.90 (s, 2H), 7.49 (m, 5H), 7.57 (m, 4H), 7.25 (m, 12H), 5.86 (s, 2H) Example 7 Photovoltaic cells were grown on ITO-coated glass substrates that were solvent cleaned and treated in UV-ozone for 10 minutes immediately prior to loading into a high vacuum (˜3×10−6Torr) chamber. The organic materials CuPc (Aldrich), C60(MTR Limited), and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) (Aldrich) were purified by sublimation prior to use. Metal cathode materials such as Al (Alfa Aesar) were used as received. The squaraine solutions were prepared with different anhydrous solvents. The thickness of the squaraine layers was controlled via the concentration of squaraine solution. In this method, the donor layer was spin casted from squaraine solution on precleaned ITO substrates. The film was then transferred to the deposition chamber. The other functional layers were sequentially grown by vacuum thermal evaporation at the following rates: C60(4 Å/sec), and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) (2 Å/sec) and metal: 1000 Å thick Al (2.5 Å/sec). The cathode was evaporated through a shadow mask with 1 mm diameter openings. Current-voltage (J-V) characteristics of PV cells were measured under simulated AM1.5G solar illumination (Oriel Instruments) using a Keithley 2420 3A Source Meter. The external quantum efficiency was also measured. DPSQ formed shiny green crystals in the solid state. Compared with parent SQ, its solution absorption was red shifted to about 674 nm in dichloromethane (DCM) solvent. Comparatively, the spin casted DPSQ film covered a range of about from 550 nm to 800 nm. The solution processed DPSQ device was configured as ITO/DPSQ (x mg/ml)/C60 (400 Å)/ BCP (100 Å)/Al. With about 0.1 Ev deeper of a HOMO than the parent SQ, the DPSQ device generated about 200 mV higher Voc than SQ solution-processed devices. Three different solvents of chloroform, chlorobenzene and toluene were used to make different DPSQ solutions. The DPSQ film made with chloroform was the smoothest with RMS of about 1.1 nm, while the film with chlorobenzene and toluene exhibited an RMS of about 11 nm. The DPSQ device cast from chloroform generated the following results: TABLE 3aDPSQ/C60photovoltaic devices performance with different solventsDPSQ/C60Different solventsηP(%)Voc(V)FFJsc(mA/cm2)chloroform3.290.840.596.68Chlorebenzene0.410.550.272.33Toluene0.130.560.370.61 Table 3a. DPSQ/C60Photovoltaic Devices Performance with Different Solvents As shown inFIG.4, different device performances resulted from thermally annealing the DPSQ as-cast films at different temperatures. Compared with DPSQ, 1-NPSQ and 2-NPSQ exhibit extended π conjugations, which may help to further enhance the charge transport ability of squaraine donors. The 1-NPSQ and 2-NPSQ are isomers with the same electrochemistry and similar optical property, but appear to behave quite different in devices. Compared with DPSQ, the UV-VIS absorption of 1-NPSQ is blue shifted to about 666 nm, while the 2-NPSQ is red shifted to about 686 nm in DCM solvent. The 1-NPSQ is more soluble, while the poorer solubility of 2-NPSQ may make film formation more challenging. A 1-NPSQ device was constructed as ITO/MoO3(80 A)/1-NPSQ (x mg/ml)/C60(400 Å)/BCP (100 Å)/Al. The 1-NPSQ film was spin casted from the 1,2-dichlorobenzene solution and annealed at different temperatures for 10 minutes. With different temperature of 90° C., 110° C. and 130° C., the 90° C. appeared to be the best annealing temperature for 1-NPSQ, resulting in an efficiency of about 5.9%, with a Voc of about 0.85 V, Jsc of about 10.8 mA/cm2, and FF of about 0.64. The efficiency reaches about 6% with a structure ITO/MoO3(80 Å)/C60(10 Å)/1-NPSQ (x mg/ml)/C60(400 Å)/BCP (100 Å)/Ag. As demonstrated inFIG.5, one improvement appears to be the higher VOCof about 0.90 V. It is believed that the relative poor film quality of the 2-NPSQ film was responsible for the decreased efficiency of 2.9% observed with the 2-NPSQ device, with a VOCof about 0.87 V, Jsc of about 6.72 mA/cm2, and FF of about 0.5. With the symmetrical squaraines, donors absorb in the red region. Absorptions may be tuned to the blue and green regions of the spectrum by making the squaraine unsymmetrical. The unsymmetrical USSQ and DPUSQ exhibit absorption at 529 nm and 535 nm respectively. They have been demonstrated as effective donors in solution processed PVs. The USSQ and DPUSQ exhibit a deeper HOMO than DPSQ, and are believed to have relatively high VOCbut low JSCdue to sharp absorption in the range of 500-600 nm, and thus poor spectral overlap with the AM1.5 spectrum. This is the absorption range where a gap is observed in the spectral response of the of aryl SQ/C60devices. Exemplary blends of SQ and USSQ are shown inFIG.6. Blends of DPUSQ or USSQ with symmetrical squaraines were also tested. The blending idea may be applied in both the vapor deposited and solution process techniques. With 1:1 weight ratio of DPUSQ and 1-NPSQ, device efficiencies were observed at about 2.38% without losing the FF of about 0.52. The Voc and JSCare about 0.81 V and about 5.43 mA/cm2. The change of VOCis expected because of different morphology is generated by mixing two donors. However, the new USSQ and DPUSQ are conductive enough to be mixed with aryl squaraines. Thus, blending does not appear to lead to any loss in the Vocvalue. As expected, the high Jscis achieved. With both unsymmetrical and symmetrical squaraines, the visible solar spectra from 500-800 nm were covered. The usefulness of unsymmetrical squaraines could be potentially applied to other PVs which miss the coverage in the 500-600 nm. It would be apparent to one of skill in the art that the present disclosure is not limited to solution processed devices, but can be extended to OPVs prepared by vapor deposition as well. While the above demonstrates, in part, a mixed donor approach in lamellar OPVs, it could be used in bulk heterojunction device structures as well, to increase the range of active wavelengths for the OPV. This device architecture, involving multiple donor materials in a single layer could be extended to the acceptor layer as well. Because of the good charge carrier mobility of squaraines, both the red and green region SQs could be mixed with other solar cell donors, such as SubPc or Porphyrins to extend the active wavelength range even further. As demonstrated inFIG.7, high performances were achieved by blending the DPUSQ and 1-NPSQ with device structure ITO/MoO3(80 Å)/1-NPsQ: DPUSQ (1:11 mg/ml)/C60(400 Å)/PTCBI (80 Å)/Ag. From the EQE response plot, a contribution from both 1-NPSQ and DPUSQ was observed, along with the following characteristics; TABLE 3bDevice performance for 1-NPSQ, DPUSQ and 1-NPSQ:DPUSQ cells.Doner(1 mg/ml)ηP(%)Voc(V)FFJsc(mA/cm2)1-NPSQ4.10.920.706.3DPUSQ4.00.990.743.41-NPSQ:DPUSQ5.20.980.717.46 Unless otherwise indicated, all numbers expressing quantities of ingredients, reaction conditions, and other properties or parameters used in the specification are to be understood as being modified in all instances by the term “about.” Accordingly, unless otherwise indicated, it should be understood that the numerical parameters set forth in the following specification and attached claims are approximations. At the very least, and not as an attempt to limit the application of the doctrine of equivalents to the scope of the claims, numerical parameters should be read in light of the number of reported significant digits and the application of ordinary rounding techniques. Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims. | 63,719 |
11944008 | DETAILED DESCRIPTION Reference will now be made in more detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, the embodiments are merely described below, by referring to the figures, to explain aspects of embodiments of the present description. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression “at least one of a, b or c” indicates only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof. As the present disclosure allows for various changes and numerous embodiments, example embodiments will be illustrated in the drawings and described in more detail in the written description. Effects, features, and a method of achieving the subject matter of the present disclosure will be readily apparent to those of ordinary skill in the art by referring to example embodiments of the present disclosure with reference to the attached drawings. The subject matter of the present disclosure may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Hereinafter, the subject matter of the present disclosure will be described in more detail by explaining example embodiments of the present disclosure with reference to the attached drawings. Like reference numerals in the drawings denote like elements, and thus, duplicative description thereof will not be repeated. In the embodiments described in the present specification, an expression used in the singular encompasses the expression of the plural, unless it has a clearly different meaning in the context. In the present specification, it is to be understood that the terms such as “including,” “having,” and “comprising” are intended to indicate the existence of the features or components disclosed in the specification, and are not intended to preclude the possibility that one or more other features or components may exist or may be added. It will be understood that when a layer, region, or component is referred to as being “on” or “onto” another layer, region, or component, it may be directly or indirectly formed over the other layer, region, or component. That is, for example, intervening layers, regions, or components may be present. Sizes of components in the drawings may be exaggerated for convenience of explanation. In other words, because sizes and thicknesses of components in the drawings may be arbitrarily illustrated for convenience of explanation, the following embodiments are not limited thereto. The term “organic layer” as used herein refers to a single and/or a plurality of layers between a first electrode and a second electrode in an organic light-emitting device. A material included in the “organic layer” is not limited to an organic material. For example, the organic layer may include an inorganic material. As used herein, the expression that “(an organic layer) includes a compound represented by Formula 1” may be construed as meaning that “(the organic layer) may include one compound represented by Formula 1 or at least two different compounds represented by Formula 1.” A heterocyclic compound may be represented by Formula 1: In Formula 1, L1may be selected from groups represented by Formulae 2A to 2F.a1 indicates the number of repeating units of L1(s), and a1 may be an integer from 1 to 5. When a1 is 2 or greater, at least two L1(s) may be identical to different from each other. The heterocyclic compound may satisfy condition (i) or condition (ii) when a1 in Formula 1 is 1:(i) L1may be selected from groups represented by Formulae 2C to 2F, and(ii) L1may be a group represented by Formula 2A or Formula 2B, c1 may be an integer from 1 to 5, and R1may not be a substituted or unsubstituted pyridinyl group, andwherein, in Formula 1, Ar may be a group represented by Formula 3. In Formula 1, n1 indicates the number of Ar(s), and n1 may be an integer from 1 to 10. When n1 is greater than 1, the plurality of Ar's may each bond to L1by way of the respective L31. In an embodiment, n1 may be 1 or 2, but the present disclosure is not limited thereto. In some embodiments, X1may be selected from O, S, N(R28), C(R28)(R29), and Si(R28)(R29). In some embodiments, L31may be selected from a single bond, a substituted or unsubstituted C5-C60carbocyclic group, and a substituted or unsubstituted C1-C60heterocyclic group. In some embodiments, a31 may be an integer from 1 to 5. In some embodiments, R1, R21to R29, R31, and R32may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazino group, a hydrazono group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a substituted or unsubstituted C1-C60alkyl group, a substituted or unsubstituted C2-C60alkenyl group, a substituted or unsubstituted C2-C60alkynyl group, a substituted or unsubstituted C1-C60alkoxy group, a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, —Si(Q1)(Q2)(Q3), —N(Q1)(Q2), —B(Q1)(Q2), —S(═O)2(Q1), and —P(═O)(Q1)(Q2). In some embodiments, c1 may be an integer from 0 to 5, where, when c1 is greater than 1, the plurality of R1's may each bond directly to L1, c21, c23, c26, c31, and c32 may each independently be an integer from 1 to 4, c22, c24, c25, c21′, and c23′ may each independently be an integer from 1 to 3, and c27 may be 1 or 2. In some embodiments, at least one substituent of the substituted C5-C60carbocyclic group, the substituted C1-C60heterocyclic group, the substituted C1-C60alkyl group, the substituted C2-C60alkenyl group, the substituted C2-C60alkynyl group, the substituted C1-C60alkoxy group, the substituted C3-C10cycloalkyl group, the substituted C1-C10heterocycloalkyl group, the substituted C3-C10cycloalkenyl group, the substituted C1-C10heterocycloalkenyl group, the substituted C6-C60aryl group, the substituted C6-C60aryloxy group, the substituted C6-C60arylthio group, the substituted C2-C60heteroaryl group, the substituted monovalent non-aromatic condensed polycyclic group, and the substituted monovalent non-aromatic condensed heteropolycyclic group may be selected from:deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, and a C1-C60alkoxy group,a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, and a C1-C60alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —Si(Q11)(Q12)(Q13), —N(Q11)(Q12), —B(Q11)(Q12), —C(═O)(Q11), —S(═O)2(Q11), and —P(═O)(Q11)(Q12),a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group,a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —Si(Q21)(Q22)(Q23), —N(Q21)(Q22), —B(Q21)(Q22), —C(═O)(Q21), —S(═O)2(Q21), and —P(═O)(Q21)(Q22), and—Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)2(Q31), and —P(═O)(Q31)(Q32),wherein Q1to Q3, Q11to Q13, Q21to Q23, and Q31to Q33may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryl group substituted with a C1-C60alkyl group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, a biphenyl group, and a terphenyl group. In Formulae 2A to 2F and 3, *, *′, and *″ each indicate a binding site to an adjacent atom. In Formulae 2A to 2F, X1may be selected from O, S, N(R28), C(R28)(R29), and Si(R28)(R29). In an embodiment, X1may be selected from O, N(R28), C(R28)(R29), and Si(R28)(R29). In an embodiment, in Formula 1, L1may be selected from groups represented by Formulae 2A-1 to 2A-3, 2B-1, 2C-1 to 2C-4, 2D-1, 2E-1 to 2E-50, and 2F-1 to 2F-10. When a1 is 1, condition (iii) or condition (iv) may be satisfied:(iii) L1may be selected from groups represented by Formulae 2C-1 to 2C-4, 2D-1, 2E-1 to 2E-50, and 2F-1 to 2F-10, and(iv) L1may be selected from groups represented by Formulae 2A-1 to 2A-3 and 3B-1, c1 may be an integer from 1 to 5, and R1may not be a substituted or unsubstituted pyridinyl group: wherein, in Formulae 2A-1 to 2A-3, 2B-1, 2C-1 to 2C-4, 2D-1, 2E-1 to 2E-50, and 2F-1 to 2F-10,R21to R29, c21 to c27, c21′, and c23′ may respectively be the same as the descriptions of R21to R29, c21 to c27, c21′, and c23′ provided herein with respect to Formulae 2A to 2F, and*, *′, and *″ each indicate a binding site to an adjacent atom. In an embodiment, in Formula 1, L1may be selected from groups represented by Formulae 2AA-1 to 2AA-7, 2BB-1, 2CC-1 to 2CC-4, 2DD-1, 2EE-1 to 2EE-8, and 2FF-1. When a1 is 1, condition (v) or condition (vi) may be satisfied:(v) L1may be selected from groups represented by Formulae 2CC-1 to 2CC-4, 2DD-1, 2EE-1 to 2EE-8, and 2FF-1, and(vi) L1may be selected from groups represented by Formulae 2AA-1 to 2AA-7 and 2BB-1, c1 may be an integer from 1 to 5, and R1may not be a substituted or unsubstituted pyridinyl group: wherein, in Formulae 2AA-1 to 2AA-7, 2BB-1, 2CC-1 to 2CC-4, 2DD-1, 2EE-1 to 2EE-8, and 2FF-1,R21, R28, and R29may each independently be selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazino group, a hydrazono group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a substituted or unsubstituted C1-C60alkyl group, a substituted or unsubstituted C2-C60alkenyl group, a substituted or unsubstituted C2-C60alkynyl group, a substituted or unsubstituted C1-C60alkoxy group, a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, —Si(Q1)(Q2)(Q3), —N(Q1)(Q2), —B(Q1)(Q2), —S(═O)2(Q1), and —P(═O)(Q1)(Q2), and*, *′, and *″ each indicate a binding site to an adjacent atom. In an embodiment, in Formula 1, a group represented by *-[L1]a1-*′ may be selected from groups represented by *-L11-*′, *-L11-L12-*′, *-L11-L12-L13-*′, and *-L11-L12-L13-L14-*′, and L11to L14may each independently be selected from groups represented Formulae 2A to 2F. When *-[L1]a1-*′ is *-L11-*′, condition (vii) or condition (viii) may be satisfied:(vii) L11may be selected from groups represented by Formulae 2C to 2F, and(viii) L11may be a group represented by Formula 2A or Formula 2B, c1 may be an integer from 1 to 5, and R1may not be a substituted or unsubstituted pyridinyl group. In one or more embodiments, a group represented by *-[L1]a1-*′ may be selected from groups represented by *-L11-*′, *-L11-L12-*′, and *-L11-L12-L13-L14-*′, L11to L14may each independently be selected from groups represented by Formulae 2A to 2F, and n1 may be 1 or 2. When *-[L1]a1-*′ is *-L11-*′, condition (vii) or condition (viii) may be satisfied. In Formula 3, L31may be selected from a single bond, a substituted or unsubstituted C5-C60carbocyclic group, and a substituted or unsubstituted C1-C60heterocyclic group.a31 indicates the number of repeating units of L31(S), and a1 may be an integer from 1 to 5. When a31 is 2 or greater, at least two L31(S) may be identical to different from each other. In some embodiments, L31may be selected from a single bond, a phenylene group, a pentalenylene group, an indenylene group, a naphthylene group, an azulenylene group, a heptalenylene group, an indacenylene group, an acenaphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenalenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a naphthacenylene group, a picenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a rubicenylene group, a coronenylene group, an ovalenylene group, a thiophenylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothiophenylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, and a pyridinylene group; anda phenylene group, a pentalenylene group, an indenylene group, a naphthylene group, an azulenylene group, a heptalenylene group, an indacenylene group, an acenaphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenalenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a naphthacenylene group, a picenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a rubicenylene group, a coronenylene group, an ovalenylene group, a thiophenylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothiophenylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, and a pyridinylene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an am idino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a phenyl group substituted with a C1-C10alkyl group, a phenyl group substituted with —F, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, —Si(Q31)(Q32)(Q33), and —N(Q31)(Q32),wherein Q31to Q33may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group. In an embodiment, L31may be a single bond, and a31 may be 1. In Formula 1, R1, R21to R29, R31, and R32may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an am idino group, a hydrazino group, a hydrazono group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a substituted or unsubstituted C1-C60alkyl group, a substituted or unsubstituted C2-C60alkenyl group, a substituted or unsubstituted C2-C60alkynyl group, a substituted or unsubstituted C1-C60alkoxy group, a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, —Si(Q1)(Q2)(Q3), —N(Q1)(Q2), —B(Q1)(Q2), —S(═O)2(Q1), and —P(═O)(Q1)(Q2). In some embodiments, R1may be selected from a C1-C20alkyl group, a C1-C20alkyl group substituted with at least one phenyl group, and a C1-C20alkoxy group;a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a spiro-fluorene-benzofluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, a silolyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, an indolyl group, an isoindolyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, a benzosilolyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a dibenzosilolyl group, a carbazolyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, an azafluorenyl group, an azaspiro-bifluorenyl group, an azacarbazolyl group, a diazacarbazolyl group, an azadibenzofuranyl group, an azadibenzothiophenyl group, an azadibenzosilolyl group, an imidazopyridinyl group, and an imidazopyrimidinyl group;a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a spiro-fluorene-benzofluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, a silolyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, an indolyl group, an isoindolyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, a benzosilolyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a dibenzosilolyl group, a carbazolyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, an azafluorenyl group, an azaspiro-bifluorenyl group, an azacarbazolyl group, a diazacarbazolyl group, an azadibenzofuranyl group, an azadibenzothiophenyl group, an azadibenzosilolyl group, an imidazopyridinyl group, and an imidazopyrimidinyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an am idino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkyl group substituted with at least one phenyl group, a C1-C20alkoxy group substituted with at least one phenyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a spiro-fluorene-benzofluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, a silolyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, an indolyl group, an isoindolyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, a benzosilolyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a dibenzosilolyl group, a carbazolyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, an azafluorenyl group, an azaspiro-bifluorenyl group, an azacarbazolyl group, a diazacarbazolyl group, an azadibenzofuranyl group, an azadibenzothiophenyl group, an azadibenzosilolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, —Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)2(Q31), and —P(═O)(Q31)(Q32); and—Si(Q1)(Q2)(Q3), —N(Q1)(Q2), and —B(Q1)(Q2),wherein Q1to Q3and Q31to Q33may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a phenyl group substituted with a cyano group, a biphenyl group, a terphenyl group, and a naphthyl group. In one or more embodiments, in Formula 1, R1may be selected from a C1-C20alkyl group, a C1-C20alkyl group substituted with at least one phenyl group, a C1-C20alkoxy group, groups represented by Formulae 5-1 to 5-51, —Si(Q1)(Q2)(Q3), and —N(Q1)(Q2): wherein, in Formulae 5-1 to 5-51,Y31may be selected from O, S, C(Z33)(Z34), N(Z35), and Si(Z36)(Z37),Z31to Z37may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkyl group substituted with at least one phenyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a spiro-fluorene-benzofluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyridinyl group, a pyrimidinyl group, a pyrazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a dibenzosilolyl group, —Si(Q31)(Q32)(Q33), —N(Q31)(Q32), and —B(Q31)(Q32),e2 may be selected from 1 and 2,e3 may be an integer from 1 to 3,e4 may be an integer from 1 to 4,e5 may be an integer from 1 to 5,e6 may be an integer from 1 to 6,e7 may be an integer from 1 to 7, ande9 may be an integer from 1 to 9,wherein Q1to Q3and Q31to Q33may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a phenyl group substituted with a cyano group, a biphenyl group, a terphenyl group, and a naphthyl group, and * indicates a binding site to an adjacent atom. In one or more embodiments, in Formula 1, R1may be selected from groups represented by Formulae 6-1 to 6-151: wherein, in Formulae 6-1 to 6-151,“t-Bu” represents a tert-butyl group,“Ph” represents a phenyl group,“TMS” represents a trimethylsilyl group,“Cz” represents a carbazolyl group, and* indicates a binding site to an adjacent atom. In an embodiment, in Formulae 2A to 2F and 3, R21to R29, R31, and R32may each independently be selected from: hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, a C1-C20alkyl group, and a C1-C20alkoxy group;a C1-C20alkyl group and a C1-C20alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a cyano group, a phenyl group, and a biphenyl group;a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a spiro-fluorene-benzofluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a pyrenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, a silolyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, an indolyl group, an isoindolyl group, an indazolyl group, a purinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, a benzosilolyl group, a benzoisothiazolyl group, a benzoxazolyl group, a benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, an oxadiazolyl group, a triazinyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a dibenzosilolyl group, a carbazolyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a thiadiazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an oxazolopyridinyl group, a thiazolopyridinyl group, a benzonaphthyridinyl group, an azafluorenyl group, an azaspiro-bifluorenyl group, an azacarbazolyl group, a diazacarbazolyl group, an azadibenzofuranyl group, an azadibenzothiophenyl group, and an azadibenzosilolyl group;a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a spiro-fluorene-benzofluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a pyrenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, a silolyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, an indolyl group, an isoindolyl group, an indazolyl group, a purinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, a benzosilolyl group, a benzoisothiazolyl group, a benzoxazolyl group, a benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, an oxadiazolyl group, a triazinyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a dibenzosilolyl group, a carbazolyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a thiadiazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an oxazolopyridinyl group, a thiazolopyridinyl group, a benzonaphthyridinyl group, an azafluorenyl group, an azaspiro-bifluorenyl group, an azacarbazolyl group, a diazacarbazolyl group, an azadibenzofuranyl group, an azadibenzothiophenyl group, and an azadibenzosilolyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a spiro-fluorene-benzofluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a pyrenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, a silolyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, an indolyl group, an isoindolyl group, an indazolyl group, a purinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, a benzosilolyl group, a benzoisothiazolyl group, a benzoxazolyl group, a benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, an oxadiazolyl group, a triazinyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a dibenzosilolyl group, a carbazolyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a thiadiazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an oxazolopyridinyl group, a thiazolopyridinyl group, a benzonaphthyridinyl group, an azafluorenyl group, an azaspiro-bifluorenyl group, an azacarbazolyl group, a diazacarbazolyl group, an azadibenzofuranyl group, an azadibenzothiophenyl group, and an azadibenzosilolyl group; and—Si(Q1)(Q2)(Q3), —N(Q1)(Q2), and —B(Q1)(Q2),wherein Q1to Q3may each independently be selected from hydrogen, deuterium, a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group. In one or more embodiments, in Formulae 2A to 2F, R21to R29, R31, and R32may each independently be selected from: hydrogen, deuterium, a phenyl group, a biphenyl group, a fluorenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a dibenzosilolyl group, a carbazolyl group, —Si(Q1)(Q2)(Q3), and —N(Q1)(Q2); anda phenyl group, a biphenyl group, a fluorenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a dibenzosilolyl group, and a carbazolyl group, each substituted with at least one selected from a cyano group, a phenyl group, a biphenyl group, a fluorenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a dibenzosilolyl group, a carbazolyl group, —Si(Q31)(Q32)(Q33), and —N(Q31)(Q32). In an embodiment, in Formula 3, R31and R32may each be hydrogen. In Formulae 2A to 2F and 3, c21, c23, c26, c31, and c32 may each independently be an integer from 1 to 4, c22, c24, c25, c21′, and c23′ may each independently be an integer from 1 to 3, and c27 may be 1 or 2. The heterocyclic compound according to one or more embodiments may be represented by any one of Formulae 1-1 to 1-10: wherein, in Formulae 1-1 to 1-3, i) L11may be selected from groups represented by Formulae 2C to 2F, or ii) L11may be a group represented by Formula 2A or Formula 2B, c1 may be an integer from 1 to 5, and R1may not be a substituted or unsubstituted pyridinyl group, andin Formulae 1-4 to 1-10, L11to L14may each independently be selected from groups represented by Formulae 2A to 2F,wherein, in Formulae 1-1 to 1-10,R33and R34may each be understood by referring to the description of R31in Formula 1, andc33 and c34 may each independently be an integer from 1 to 4. In an embodiment, in Formulae 1-1 to 1-3, i) L11may be selected from groups represented by Formulae 2C-1 to 2C-4, 2D-1, 2E-1 to 2E-50, and 2F-1 to 2F-10, or ii) L11may be selected from groups represented by Formulae 2A-1 to 2A-3 and 3B-1, c1 may be an integer from 1 to 5, and R1may not be a substituted or unsubstituted pyridinyl group. In one or more embodiments, in Formulae 1-1 to 1-3, i) L11may be selected from groups represented by Formulae 2CC-1 to 2CC-4, 2DD-1, 2EE-1 to 2EE-8, and 2FF-1, or ii) L11may be selected from groups represented by Formulae 2AA-1 to 2AA-7 and 2BB-1, c1 may be an integer from 1 to 5, and R1may not be a substituted or unsubstituted pyridinyl group. In an embodiment, in Formulae 1-4 to 1-10, L11to L14may each independently be selected from groups represented by Formulae 2A-1 to 2A-3, 2B-1, 2C-1 to 2C-4, 2D-1, 2E-1 to 2E-50, and 2F-1. In one or more embodiments, in Formulae 1-4 to 1-10, L11to L14may each independently be selected from groups represented by Formulae 2AA-1 to 2AA-7, 2BB-1, 2CC-1 to 2CC-4, 2DD-1, 2EE-1 to 2EE-8, and 2FF-1. In the present specification, at least one substituent of the substituted C5-C60carbocyclic group, the substituted C1-C60heterocyclic group, the substituted C1-C60alkyl group, the substituted C2-C60alkenyl group, the substituted C2-C60alkynyl group, the substituted C1-C60alkoxy group, the substituted C3-C10cycloalkyl group, the substituted C1-C10heterocycloalkyl group, the substituted C3-C10cycloalkenyl group, the substituted C1-C10heterocycloalkenyl group, the substituted C6-C60aryl group, the substituted C6-C60aryloxy group, the substituted C6-C60arylthio group, the substituted C2-C60heteroaryl group, the substituted monovalent non-aromatic condensed polycyclic group, and the substituted monovalent non-aromatic condensed heteropolycyclic group may be selected from:deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, and a C1-C60alkoxy group;a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, and a C1-C60alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —Si(Q11)(Q12)(Q13), —N(Q11)(Q12), —B(Q11)(Q12), —C(═O)(Q11), —S(═O)2(Q11), and —P(═O)(Q11)(Q12);a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group;a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —Si(Q21)(Q22)(Q23), —N(Q21)(Q22), —B(Q21)(Q22), —C(═O)(Q21), —S(═O)2(Q21), and —P(═O)(Q21)(Q22); and—Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)2(Q31), and —P(═O)(Q31)(Q32),wherein Q1to Q3, Q11to Q13, Q21to Q23, and Q31to Q33may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryl group substituted with a C1-C60alkyl group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, a biphenyl group, and a terphenyl group. In an embodiment, the heterocyclic compound represented by Formula 1 may be selected from Compounds 1 to 85: The heterocyclic compound represented by Formula 1 may include at least one group represented by Formula 3. The group represented by Formula 3 may have a high glass transition temperature by including a structure in which adamantane, which is relatively large and has relatively high rigidity, is condensed at a carbon-9 position of 9,9-dihydroacridine. Accordingly, the heterocyclic compound may have improved thermal stability. In addition, as the heterocyclic compound may have a bulky substituent in the molecule thereof, intermolecular interaction may be reduced due to the relatively large steric hindrance of the bulky substituent, and accordingly, the heterocyclic compound may have a relatively high triplet energy level. Thus, when the heterocyclic compound is applied to an organic light-emitting device, diffusion of triplet excitons generated from the emission layer to an organic layer close to the emission layer, e.g., a hole transport layer or an electron transport layer, may be prevented or reduced, thereby improving luminescence efficiency of the organic light-emitting device. Therefore, the organic light-emitting device may have excellent luminescence characteristics. Further, as the heterocyclic compound has a relatively high triplet energy level, the heterocyclic compound may be suitable for use as a host material of a blue dopant. In Formula 1, L1group may be selected from groups represented by Formulae 2A to 2F in which may not include an electron-deficient moiety. The heterocyclic compound may have a structure including an adamantyl-acridine moiety, e.g., a strong electron-donor group and an electron-donating linker L1, thereby improving hole injection characteristics. Accordingly, when the heterocyclic compound is applied to an organic light-emitting device, the driving voltage may be lowered, and charge balance characteristics may be improved, thereby improving luminescence efficiency. In addition, as various heterorings and substituents are introduced to L1and R1in the heterocyclic compound, controlling energy level and steric hindrance effects of the compound may be facilitated, and the triplet energy of the heterocyclic compound may be well-maintained, and thus, the heterocyclic compound may be used as a phosphorescence and TADF host material. Therefore, an electronic device, e.g., an organic light-emitting device, including the heterocyclic compound represented by Formula 1 may have a low driving voltage, high efficiency, and high maximum quantum efficiency. Methods of synthesizing the heterocyclic compound represented by Formula 1 should be readily apparent to those of ordinary skill in the art by referring to the Examples described herein. At least one heterocyclic compound represented by Formula 1 may be included between a pair of electrodes in an organic light-emitting device. In some embodiments, the heterocyclic compound may be included in at least one selected from a hole transport region, an electron transport region, and an emission layer. In some embodiments, the heterocyclic compound represented by Formula 1 may be used as a material for forming a capping layer, which is on outer sides of a pair of electrodes in an organic light-emitting device. Accordingly, there is provided an organic light-emitting device including a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode and including an emission layer, and the organic light-emitting device may include at least one heterocyclic compound represented by Formula 1. In an embodiment, the organic layer in the organic light-emitting device may include the at least one heterocyclic compound represented by Formula 1. As used herein, the expression that “(an organic layer) includes at least one heterocylic compound” may be construed as meaning that “(the organic layer) may include one heterocylic compound of Formula 1 or at least two different heterocylic compounds of Formula 1.” For example, the organic layer may include Compound 1 only as the heterocylic compound. In this embodiment, Compound 1 may be included in the emission layer of the organic light-emitting device. In some embodiments, the organic layer may include Compounds 1 and 2 as the heterocyclic compounds. In this embodiment, Compounds 1 and 2 may be included in the same layer (for example, both Compounds 1 and 2 may be included in an emission layer) or in different layers (for example, Compound 1 may be included in an emission layer, and Compound 2 may be included in an hole transport layer). In some embodiments, a first electrode of the organic light-emitting device may be an anode,a second electrode of the organic light-emitting device may be a cathode,the organic layer may further include a hole transport region between the first electrode and the emission layer and an electron transport region between the emission layer and the second electrode,the hole transport region may include a hole injection layer, a hole transport layer, an emission auxiliary layer, an electron blocking layer, or a combination thereof, andthe electron transport region may include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, or a combination thereof. In an embodiment, the heterocyclic compound may be included in the organic layer of the organic light-emitting device. In an embodiment, the heterocyclic compound may be included in the emission layer of the organic light-emitting device. In an embodiment, the emission layer may include a host and a dopant, a content (e.g., an amount) of a host in the emission layer may be greater than a content (e.g., an amount) of a dopant in the emission layer, and the host may include the heterocyclic compound. In some embodiments, the dopant in the emission layer may include a phosphorescent dopant or a fluorescent dopant. The fluorescent dopant may include a thermally activated delayed fluorescent (TADF) dopant. In some embodiments, the dopant may be a phosphorescent dopant, and the phosphorescent dopant may include an organometallic complex represented by Formula 401: wherein, in Formulae 401 and 402,M may be selected from iridium (Ir), platinum (Pt), palladium (Pd), osmium (Os), titanium (Ti), zirconium (Zr), hafnium (Hf), europium (Eu), terbium (Tb), rhodium (Rh), and thulium (Tm),L401may be selected from ligands represented by Formula 402, and xc1 may be 1, 2, or 3, and when xc1 is 2 or greater, at least two L401(s) may be identical to or different from each other,L402may be an organic ligand, and xc2 may be an integer selected from 0 to 4, and when xc2 is 2 or greater, at least two L402(s) may be identical to or different from each other,X401to X404may each independently be a nitrogen or a carbon,X401and X403may be bound to each other via a single bond or a double bond, X402and X404may be bound to each other via a single bond or a double bond,A401and A402may each independently be a C5-C60carbocyclic group or a C1-C60heterocyclic group,X405may be a single bond, *—O—*′, *—S—*′, *—C(═O)—*′, *—N(Q411)-*′, *—C(Q411)(Q412)-*′, *—C(Q411)=C(Q412)-*′, *—C(Q411)=*′, or *═C═*′, wherein Q411and Q412may each independently be hydrogen, deuterium, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, or a naphthyl group,X406may be a single bond, O, or S,R401and R402may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a substituted or unsubstituted C1-C20alkyl group, a substituted or unsubstituted C1-C20alkoxy group, a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, —Si(Q401)(Q402)(Q403), —N(Q401)(Q402), —B(Q401)(Q402), —C(═O)(Q401), —S(═O)2(Q401), and —P(═O)(Q401)(Q402), wherein Q401to Q403may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a C6-C20aryl group, and a C1-C20heteroaryl group,xc11 and xc12 may each independently be an integer from 0 to 10, and* and *′ in Formula 402 each indicate a binding site to M in Formula 401. The heterocyclic compound has a high triplet energy level, and thus, the heterocyclic compound may be suitable for use as a blue host. In some embodiments, the heterocyclic compound may be a blue phosphorescent host or a blue fluorescent host. In one or more embodiments, a dopant in the emission layer may include the heterocyclic compound. A content (e.g., an amount) of the dopant in the emission layer may be in a range of about 0.1 parts to about 50 parts by weight, based on 100 parts by weight of the emission layer. In an embodiment, an emission layer including the heterocyclic compound may emit blue light. The blue light may have a maximum emission wavelength in a range of about 390 nanometers (nm) to about 440 nm. In an embodiment, a hole transport region of the organic light-emitting device may include a charge generating material. In an embodiment, the charge generating material may include a p-dopant of which the lowest unoccupied molecular orbital (LUMO) energy level may be about −3.5 electron volts (eV) or lower. In an embodiment, the organic light-emitting device may further include a metal-containing material in the electron transport region thereof. In some embodiments, the electron transport region may further include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, a rare earth metal compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or a combination thereof. Description ofFIG.1 FIG.1illustrates a schematic cross-sectional view of an organic light-emitting device10according to an embodiment. The organic light-emitting device10may include a first electrode110, an organic layer150, and a second electrode190. Hereinafter, the structure of the organic light-emitting device10according to an embodiment and a method of manufacturing an organic light-emitting device according to an embodiment will be described in connection withFIG.1. First Electrode110 InFIG.1, a substrate may be additionally located under the first electrode110or above the second electrode190. The substrate may be a glass substrate and/or a plastic substrate, each having excellent mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and/or water resistance. The first electrode110may be formed by depositing or sputtering, onto the substrate, a material for forming the first electrode110. When the first electrode110is an anode, the material for forming the first electrode110may be selected from materials having a high work function that facilitate hole injection. The first electrode110may be a reflective electrode, a semi-transmissive electrode, or a transmissive electrode. When the first electrode110is a transmissive electrode, a material for forming the first electrode110may be selected from indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), and any combinations thereof, but the present disclosure is not limited thereto. In some embodiments, when the first electrode110is a semi-transmissive electrode or a reflective electrode, as a material for forming the first electrode110, at least one of magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), magnesium-silver (Mg—Ag), and any combination thereof may be used, but the present disclosure is not limited thereto. The first electrode110may have a single-layered structure, or a multi-layered structure including two or more layers. In some embodiments, the first electrode110may have a triple-layered structure of ITO/Ag/ITO, but the present disclosure is not limited thereto. Organic Layer150 The organic layer150may be on the first electrode110. The organic layer150may include an emission layer. The organic layer150may further include a hole transport region between the first electrode110and the emission layer and an electron transport region between the emission layer and the second electrode190. Hole Transport Region in Organic Layer150 The hole transport region may have i) a single-layered structure including (e.g., consisting of) a single layer including (e.g., consisting of) a single material, ii) a single-layered structure including (e.g., consisting of) a single layer including a plurality of different materials, or iii) a multi-layered structure having a plurality of layers including a plurality of different materials. The hole transport region may include at least one layer selected from a hole injection layer, a hole transport layer, an emission auxiliary layer, and an electron blocking layer. For example, the hole transport region may have a single-layered structure including a single layer including a plurality of different materials or a multi-layered structure, e.g., a hole injection layer/hole transport layer structure, a hole injection layer/hole transport layer/emission auxiliary layer structure, a hole injection layer/emission auxiliary layer structure, a hole transport layer/emission auxiliary layer structure, or a hole injection layer/hole transport layer/electron blocking layer structure, wherein layers of each structure are sequentially stacked on the first electrode110in each stated order, but the present disclosure is not limited thereto. The hole transport region may include at least one selected from m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, a spiro-TPD, a spiro-NPB, methylated-NPB, TAPC, HMTPD, 4,4′,4″-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline/dodecylbenzenesulfonic acid (PANI/DBSA), poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT/PSS), polyaniline/camphor sulfonic acid (PANI/CSA), polyaniline/poly(4-styrenesulfonate) (PANI/PSS), a compound represented by Formula 201, and a compound represented by Formula 202: wherein, in Formulae 201 and 202,L201to L204may each independently be selected from a substituted or unsubstituted C3-C10cycloalkylene group, a substituted or unsubstituted C1-C10heterocycloalkylene group, a substituted or unsubstituted C3-C10cycloalkenylene group, a substituted or unsubstituted C1-C10heterocycloalkenylene group, a substituted or unsubstituted C6-C60arylene group, a substituted or unsubstituted C1-C60heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,L205may be selected from *—O—*′, *—N(Q201)-*′, a substituted or unsubstituted C1-C20alkylene group, a substituted or unsubstituted C2-C20alkenylene group, a substituted or unsubstituted C3-C10cycloalkylene group, a substituted or unsubstituted C1-C10heterocycloalkylene group, a substituted or unsubstituted C3-C10cycloalkenylene group, a substituted or unsubstituted C1-C10heterocycloalkenylene group, a substituted or unsubstituted C6-C60arylene group, a substituted or unsubstituted C1-C60heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,xa1 to xa4 may each independently be an integer from 0 to 3,xa5 may be an integer from 1 to 10, andR201to R204and Q201may each independently be selected from a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group. In some embodiments, in Formula 202, R201and R202may optionally be bound via a single bond, a dimethyl-methylene group, or a diphenyl-methylene group, and R203and R204may optionally be bound via a single bond, a dimethyl-methylene group, or a diphenyl-methylene group. In some embodiments, in Formulae 201 and 202,L201to L205may each independently be selected from:a phenylene group, a pentalenylene group, an indenylene group, a naphthylene group, an azulenylene group, a heptalenylene group, an indacenylene group, an acenaphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenalenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a naphthacenylene group, a picenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a rubicenylene group, a coronenylene group, an ovalenylene group, a thiophenylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothiophenylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, and a pyridinylene group; anda phenylene group, a pentalenylene group, an indenylene group, a naphthylene group, an azulenylene group, a heptalenylene group, an indacenylene group, an acenaphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenalenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a naphthacenylene group, a picenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a rubicenylene group, a coronenylene group, an ovalenylene group, a thiophenylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothiophenylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, and a pyridinylene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an am idino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a phenyl group substituted with a C1-C10alkyl group, a phenyl group substituted with —F, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, —Si(Q31)(Q32)(Q33), and —N(Q31)(Q32),wherein Q31to Q33may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group. In one or more embodiments, xa1 to xa4 may each independently be 0, 1, or 2. In one or more embodiments, xa5 may be 1, 2, 3, or 4. In one or more embodiments, R201to R204and Q201may each independently be selected from: a phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, and a pyridinyl group; anda phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, and a pyridinyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a phenyl group substituted with a C1-C10alkyl group, a phenyl group substituted with —F, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, —Si(Q31)(Q32)(Q33), and —N(Q31)(Q32),wherein Q31to Q33may respectively be understood by referring to the descriptions of Q31to Q33provided herein. In one or more embodiments, in Formula 201, at least one of R201to R203may be selected from:a fluorenyl group, a spiro-bifluorenyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothiophenyl group; anda fluorenyl group, a spiro-bifluorenyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothiophenyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a phenyl group substituted with a C1-C10alkyl group, a phenyl group substituted with —F, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothiophenyl group,but the present disclosure is not limited thereto. In one or more embodiments, in Formula 202, i) R201and R202may be bound via a single bond, and/or ii) R203and R204may be bound via a single bond. In one or more embodiments, in Formula 202, at least one of R201to R204may be selected from:a carbazolyl group; anda carbazolyl group substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a phenyl group substituted with a C1-C10alkyl group, a phenyl group substituted with —F, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothiophenyl group,but the present disclosure is not limited thereto. The compound represented by Formula 201 may be represented by Formula 201-1: In some embodiments, the compound represented by Formula 201 may be represented by Formula 201-2, but the present disclosure is not limited thereto: In some embodiments, the compound represented by Formula 201 may be represented by Formula 201-2(1), but the present disclosure is not limited thereto: The compound represented by Formula 201 may be represented by Formula 201A: In some embodiments, the compound represented by Formula 201 may be represented by Formula 201A(1), but the present disclosure is not limited thereto: In some embodiments, the compound represented by Formula 201 may be represented by Formula 201A-1, but the present disclosure is not limited thereto: In some embodiments, the compound represented by Formula 202 may be represented by Formula 202-1: In one or more embodiments, the compound represented by Formula 202 may be represented by Formula 202-1(1): In some embodiments, the compound represented by Formula 202 may be represented by Formula 202A: In some embodiments, the compound represented by Formula 202 may be represented by Formula 202A-1: In Formulae 201-1, 201-2, 201-2(1), 201A, 201A(1), 201A-1, 202-1, 202-1(1), 202A, and 202A-1,L201to L203, xa1 to xa3, xa5, and R202to R204may respectively be understood by referring to the descriptions of L201to L203, xa1 to xa3, xa5, and R202to R204provided herein,L205may be selected from a phenylene group and a fluorenylene group,X211may be selected from O, S, and N(R211),X212may be selected from O, S, and N(R212),R211and R212may each be understood by referring to the description of R203provided herein, andR213to R217may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an am idino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a phenyl group substituted with a C1-C10alkyl group, a phenyl group substituted with —F, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, and a pyridinyl group. The hole transport region may include at least one compound selected from Compounds HT1 to HT48, but the present disclosure is not limited thereto: The thickness of the hole transport region may be in a range of about 100 (Angstroms) Å to about 10,000 Å, and in some embodiments, about 100 Å to about 1,000 Å. When the hole transport region includes at least one selected from a hole injection layer and a hole transport layer, the thickness of the hole injection layer may be in a range of about 100 Å to about 9,000 Å, and in some embodiments, about 100 Å to about 1,000 Å, and the thickness of the hole transport layer may be in a range of about 50 Å to about 2,000 Å, and in some embodiments, about 100 Å to about 1,500 Å. When the thicknesses of the hole transport region, the hole injection layer, and the hole transport layer are within any of the foregoing ranges, excellent hole transport characteristics may be obtained without a substantial increase in driving voltage. The emission auxiliary layer may increase light emission efficiency by compensating for an optical resonance distance according to the wavelength of light emitted by an emission layer. The electron blocking layer may reduce or eliminate the flow of electrons from an electron transport region. The emission auxiliary layer and the electron blocking layer may include the aforementioned materials. p-Dopant The hole transport region may include a charge generating material as well as the aforementioned materials, to improve conductive properties (e.g., electrical conductivity) of the hole transport region. The charge generating material may be substantially homogeneously or non-homogeneously dispersed in the hole transport region. The charge generating material may include, for example, a p-dopant. In some embodiments, the lowest unoccupied molecular orbital (LUMO) energy level of the p-dopant may be −3.5 eV or less. The p-dopant may include at least one selected from a quinone derivative, a metal oxide, and a cyano group-containing compound, but the present disclosure is not limited thereto. In some embodiments, the p-dopant may include:a quinone derivative, such as tetracyanoquinodimethane (TCNQ) or 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ);a metal oxide, such as tungsten oxide or molybdenum oxide;1,4,5,8,9,12-hexaazatriphenylene-hexacarbonitrile (HAT-CN); anda compound represented by Formula 221,but the present disclosure is not limited thereto: wherein, in Formula 221,R221to R223may each independently be selected from a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or Unsubstituted C6-C60aryl group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, wherein at least one selected from R221to R223may include at least one substituent selected from a cyano group, —F, —Cl, —Br, —I, a C1-C20alkyl group substituted with —F, a C1-C20alkyl group substituted with —C1, a C1-C20alkyl group substituted with —Br, and a C1-C20alkyl group substituted with —I. Emission Layer in Organic Layer150 When the organic light-emitting device10is a full color organic light-emitting device, the emission layer may be patterned into a red emission layer, a green emission layer, or a blue emission layer, according to a sub-pixel. In one or more embodiments, the emission layer may have a stacked structure. The stacked structure may include two or more layers selected from a red emission layer, a green emission layer, and a blue emission layer. The two or more layers may be in direct contact (e.g., physical contact) with each other. In some embodiments, the two or more layers may be separated (e.g., spaced apart) from each other. In one or more embodiments, the emission layer may include two or more materials. The two or more materials may include a red light-emitting material, a green light-emitting material, or a blue light-emitting material. The two or more materials may be mixed with each other in a single layer. The two or more materials mixed with each other in the single layer may emit white light. The emission layer may include a host and a luminescent material. The luminescent material may include at least one selected from a phosphorescent dopant, a fluorescent dopant, and a quantum dot. The amount of the dopant in the emission layer may be, in general, in a range of about 0.01 parts to about 15 parts by weight based on 100 parts by weight of the host, but the present disclosure is not limited thereto. The thickness of the emission layer may be in a range of about 100 Å to about 1,000 Å, and in some embodiments, about 200 Å to about 600 Å. When the thickness of the emission layer is within any of the foregoing ranges, improved luminescence characteristics may be obtained without a substantial increase in driving voltage. Host in Emission Layer The host may include the heterocyclic compound represented by Formula 1. In some embodiments, the host may further include a compound represented by Formula 301: [Ar601]xe11-[(L601)xe1-R601]xe21Formula 301wherein, in Formula 301,Ar301may be selected from a substituted or unsubstituted C5-C60carbocyclic group and a substituted or unsubstituted C1-C60heterocyclic group,xb11 may be 1, 2, or 3,L301may be selected from a substituted or unsubstituted C3-C10cycloalkylene group, a substituted or unsubstituted C1-C10heterocycloalkylene group, a substituted or unsubstituted C3-C10cycloalkenylene group, a substituted or unsubstituted C1-C10heterocycloalkenylene group, a substituted or unsubstituted C6-C60arylene group, a substituted or unsubstituted C1-C60heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,xb1 may be an integer from 0 to 5,R301may be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a substituted or unsubstituted C1-C60alkyl group, a substituted or unsubstituted C2-C60alkenyl group, a substituted or unsubstituted C2-C60alkynyl group, a substituted or unsubstituted C1-C60alkoxy group, a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, —Si(Q301)(Q302)(Q303), —N(Q301)(Q302), —B(Q301)(Q302), —C(═O)(Q301), —S(═O)2(Q301), and —P(═O)(Q301)(Q302), andxb21 may be an integer from 1 to 5,wherein Q301to Q303may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group, but the present disclosure is not limited thereto. In some embodiments, in Formula 301, Ar301may be selected from:a naphthalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, a dibenzofuran group, and a dibenzothiophene group; anda naphthalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, a dibenzofuran group, and a dibenzothiophene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, —Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)2(Q31), and —P(═O)(Q31)(Q32),wherein Q31to Q33may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group, but the present disclosure is not limited thereto. When xb11 in Formula 301 is 2 or greater, at least two Ar301(s) may be bound via a single bond. In one or more embodiments, the compound represented by Formula 301 may be represented by Formula 301-1 or 301-2: wherein, in Formulae 301-1 to 301-2,A301to A304may each independently be selected from a benzene group, a naphthalene group, a phenanthrene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a pyridine group, a pyrimidine group, an indene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, an indole group, a carbazole group, a benzocarbazole group, a dibenzocarbazole group, a furan group, a benzofuran group, a dibenzofuran group, a naphthofuran group, a benzonaphthofuran group, a dinaphthofuran group, a thiophene group, a benzothiophene group, a dibenzothiophene group, a naphthothiophene group, a benzonapthothiophene group, and a dinaphthothiophene group,X301may be O, S, or N-[(L304)xb4-R304],R311to R314may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an am idino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group —Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)2(Q31), and —P(═O)(Q31)(Q32),xb22 and xb23 may each independently be 0, 1, or 2,L301, xb1, R301, and Q31to Q33may respectively be understood by referring to the descriptions of L301, xb1, R301, and Q31to Q33provided herein,L302to L304may each be understood by referring to the description of L301provided herein,xb2 to xb4 may each be understood by referring to the descriptions of xb1 provided herein, andR302to R304may each be understood by referring to the description of R301provided herein. In some embodiments, in Formulae 301, 301-1, and 301-2, L301to L304may each independently be selected from:a phenylene group, a naphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a thiophenylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothiophenylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, a pyridinylene group, an imidazolylene group, a pyrazolylene group, a thiazolylene group, an isothiazolylene group, an oxazolylene group, an isoxazolylene group, a thiadiazolylene group, an oxadiazolylene group, a pyrazinylene group, a pyrimidinylene group, a pyridazinylene group, a triazinylene group, a quinolinylene group, an isoquinolinylene group, a benzoquinolinylene group, a phthalazinylene group, a naphthyridinylene group, a quinoxalinylene group, a quinazolinylene group, a cinnolinylene group, a phenanthridinylene group, an acridinylene group, a phenanthrolinylene group, a phenazinylene group, a benzimidazolylene group, an isobenzothiazolylene group, a benzoxazolylene group, a benzoisoxazolylene group, a triazolylene group, a tetrazolylene group, an imidazopyridinylene group, an imidazopyrimidinylene group, and an azacarbazolylene group; anda phenylene group, a naphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a thiophenylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothiophenylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, a pyridinylene group, an imidazolylene group, a pyrazolylene group, a thiazolylene group, an isothiazolylene group, an oxazolylene group, an isoxazolylene group, a thiadiazolylene group, an oxadiazolylene group, a pyrazinylene group, a pyrimidinylene group, a pyridazinylene group, a triazinylene group, a quinolinylene group, an isoquinolinylene group, a benzoquinolinylene group, a phthalazinylene group, a naphthyridinylene group, a quinoxalinylene group, a quinazolinylene group, a cinnolinylene group, a phenanthridinylene group, an acridinylene group, a phenanthrolinylene group, a phenazinylene group, a benzimidazolylene group, an isobenzothiazolylene group, a benzoxazolylene group, a benzoisoxazolylene group, a triazolylene group, a tetrazolylene group, an imidazopyridinylene group, an imidazopyrimidinylene group, and an azacarbazolylene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an am idino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, an isobenzothiazolyl group, a benzoxazolyl group, a benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an azacarbazolyl group, —Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)2(Q31), and —P(═O)(Q31)(Q32),wherein Q31to Q33may respectively be understood by referring to the descriptions of Q31to Q33provided herein. In some embodiments, in Formulae 301, 301-1, and 301-2, R301to R304may each independently be selected from:a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, and an azacarbazolyl group; anda phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, and an azacarbazolyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an azacarbazolyl group, —Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)2(Q31), and —P(═O)(Q31)(Q32),wherein Q31to Q33may respectively be understood by referring to the descriptions of Q31to Q33provided herein. In some embodiments, the host may include an alkaline earth metal complex and/or zinc (Zn) complex. For example, the host may include a beryllium (Be) complex, e.g., Compound H55, a magnesium (Mg) complex, and/or a zinc (Zn) complex. The host may include at least one selected from 9,10-di(2-naphthyl)anthracene (ADN), 2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN), 9,10-di-(2-naphthyl)-2-t-butyl-anthracene (TBADN), 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP), 1,3-di-9-carbazolylbenzene (mCP), 1,3,5-tri(carbazol-9-yl)benzene (TCP), and Compounds H1 to H55, but the present disclosure is not limited thereto: Phosphorescent Dopant Included in Emission Layer of Organic Layer150 The phosphorescent dopant may include an organometallic complex represented by Formula 401: wherein, in Formulae 401 and 402,M may be selected from iridium (Ir), platinum (Pt), palladium (Pd), osmium (Os), titanium (Ti), zirconium (Zr), hafnium (Hf), europium (Eu), terbium (Tb), rhodium (Rh), and thulium (Tm),L401may be selected from ligands represented by Formula 402, and xc1 may be 1, 2, or 3, and when xc1 is 2 or greater, at least two L401(s) may be identical to or different from each other,L402may be an organic ligand, and xc2 may be an integer selected from 0 to 4, and when xc2 is 2 or greater, at least two L402(s) may be identical to or different from each other,X401to X404may each independently be a nitrogen or a carbon,X401and X403may be bound to each other via a single bond or a double bond, X402and X404may be bound to each other via a single bond or a double bond,A401and A402may each independently be a C5-C60carbocyclic group or a C1-C60heterocyclic group,X405may be a single bond, *—O—*′, *—S—*′, *—C(═O)—*′, *—N(Q411)-*′, *—C(Q411)(Q412)-*′, *—C(Q411)=C(Q412)-*′, *—C(Q411)=*′, or *═C=*′, wherein Q411and Q412may each independently be hydrogen, deuterium, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, or a naphthyl group,X406may be a single bond, O, or S,R401and R402may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a substituted or unsubstituted C1-C20alkyl group, a substituted or unsubstituted C1-C20alkoxy group, a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, —Si(Q401)(Q402)(Q403), —N(Q401)(Q402), —B(Q401)(Q402), —C(═O)(Q401), —S(═O)2(Q401), and —P(═O)(Q401)(Q402), wherein Q401to Q403may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a C6-C20aryl group, and a C1-C20heteroaryl group,xc11 and xc12 may each independently be an integer from 0 to 10, and* and *′ in Formula 402 each indicate a binding site to M in Formula 401. In some embodiments, in Formula 402, A401and A402may each independently be selected from a benzene group, a naphthalene group, a fluorene group, a spiro-bifluorene group, an indene group, a pyrrole group, a thiophene group, a furan group, an imidazole group, a pyrazole group, a thiazole group, an isothiazole group, an oxazole group, an isoxazole group, a pyridine group, a pyrazine group, a pyrimidine group, a pyridazine group, a quinoline group, an isoquinoline group, a benzoquinoline group, a quinoxaline group, a quinazoline group, a carbazole group, a benzimidazole group, a benzofuran group, a benzothiophene group, an isobenzothiophene group, a benzoxazole group, an isobenzoxazole group, a triazole group, a tetrazole group, an oxadiazole group, a triazine group, a dibenzofuran group, and a dibenzothiophene group. In one or more embodiments, in Formula 402, i) X401may be nitrogen, and X402may be carbon, or ii) X401and X402may each be nitrogen. In an embodiment, in Formula 402, R401and R402may each independently be selected from: hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, and a C1-C20alkoxy group;a C1-C20alkyl group and a C1-C20alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a phenyl group, a naphthyl group, a cyclopentyl group, a cyclohexyl group, an adamantyl group, a norbornanyl group, and a norbornenyl group;a cyclopentyl group, a cyclohexyl group, an adamantyl group, a norbornanyl group, a norbornenyl group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothiophenyl group;a cyclopentyl group, a cyclohexyl group, an adamantyl group, a norbornanyl group, a norbornenyl group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothiophenyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a cyclopentyl group, a cyclohexyl group, an adamantyl group, a norbornanyl group, a norbornenyl group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothiophenyl group; and—Si(Q401)(Q402)(Q403), —N(Q401)(Q402), —B(Q401)(Q402), —C(═O)(Q401), —S(═O)2(Q401), and —P(═O)(Q401)(Q402),wherein Q401to Q403may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, and a naphthyl group, but the present disclosure is not limited thereto. In one or more embodiments, when xc1 in Formula 401 is 2 or greater, two A401(s) of at least two L401(s) may optionally be linked via X407as a linking group; or two A402(s) may optionally be linked via X408as a linking group (see Compounds PD1 to PD4 and PD7). X407and X408may each independently be selected from a single bond, *—O—*′, *—S—*′, *—C(═O)—*′, *—N(Q413)-*′, *—C(Q413)(Q414)-*′, and *—C(Q413)=C(Q414)-*′, wherein Q413and Q414may each independently be hydrogen, deuterium, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, or a naphthyl group, but the present disclosure is not limited thereto.L402in Formula 401 may be any suitable monovalent, divalent, or trivalent organic ligand. For example, L402may be selected from halogen, diketone (e.g., acetylacetonate), a carboxylic acid (e.g., picolinate), —C(═O), isonitrile, —CN, and phosphorus (e.g., phosphine or phosphite), but the present disclosure is not limited thereto. In some embodiments, the phosphorescent dopant may include, for example, at least one selected from Compounds PD1 to PD25, but the present disclosure is not limited thereto: Fluorescent Dopant in Emission Layer The fluorescent dopant may include an arylamine compound or a styrylamine compound. In some embodiments, the fluorescent dopant may include a compound represented by Formula 501: wherein, in Formula 501, Ar501may be selected from a substituted or unsubstituted C5-C60carbocyclic group and a substituted or unsubstituted C1-C60heterocyclic group,L501to L503may each independently be selected from a substituted or unsubstituted C3-C10cycloalkylene group, a substituted or unsubstituted C1-C10heterocycloalkylene group, a substituted or unsubstituted C3-C10cycloalkenylene group, a substituted or unsubstituted C1-C10heterocycloalkenylene group, a substituted or unsubstituted C6-C60arylene group, a substituted or unsubstituted C1-C60heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,xd1 to xd3 may each independently be an integer from 0 to 3,R501and R502may each independently be selected from a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, andxd4 may be an integer from 1 to 6. In some embodiments, in Formula 501, Ar501may be selected from:a naphthalene group, a heptalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, and an indenophenanthrene group; anda naphthalene group, a heptalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, and an indenophenanthrene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group. In an embodiment, in Formula 501, L501and L503may each independently be selected from:a phenylene group, a naphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a thiophenylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothiophenylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, and a pyridinylene group; anda phenylene group, a naphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a thiophenylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothiophenylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, and a pyridinylene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, and a pyridinyl group. In an embodiment, in Formula 501, R501and R502may each independently be selected from:a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, and a pyridinyl group; anda phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, and a pyridinyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, and —Si(Q31)(Q32)(Q33),wherein Q31to Q33may be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group. In one or more embodiments, xd4 in Formula 501 may be 2, but the present disclosure is not limited thereto. In some embodiments, the fluorescent dopant may be selected from Compounds FD1 to FD22: In some embodiments, the fluorescent dopant may be selected from the following compounds, but the present disclosure is not limited thereto: Quantum Dot The emission layer included in the organic light-emitting device of the present disclosure may include a quantum dot material. The quantum dot is a particle having a crystal structure of several to tens of nanometers in size. The quantum dot may include hundreds to thousands of atoms. Because the quantum dot is very small in size, quantum confinement effect may occur. The quantum confinement is a phenomenon in which a band gap of an object becomes larger when the object becomes smaller than a nanometer size. Accordingly, when light of a wavelength having an energy larger than a band gap of the quantum dot is incident on the quantum dot, the quantum dot is excited by absorbing the light, emits light of a set or specific wavelength, and falls to the ground state. In this case, the wavelength of the emitted light may have a value corresponding to the band gap. A core of the quantum dot may include a II-VI compound, a III-VI compound, a III-V compound, a IV-VI compound, a Group IV element or compound, a1-Ill-VI compound, or a combination thereof. The II-VI compound may be selected from a binary compound selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and a mixture thereof; a ternary compound selected from the group consisting of CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and a mixture thereof; and a quaternary compound selected from the group consisting of CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and a mixture thereof. The III-VI compound may include a binary compound such as In2S3or In2Se3; a ternary compound such as InGaS3or InGaSe3; or any combination thereof. The III-V compound may be selected from a binary compound selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AIP, AlAs, AlSb, InN, InP, InAs, InSb and a mixture thereof; a ternary compound selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and a mixture thereof; and a quaternary compound selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and a mixture thereof. The III-V semiconductor compound may further include a Group II metal (e.g., InZnP). The IV-VI compound may be selected from a binary compound selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and a mixture thereof; a ternary compound selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and a mixture thereof; and a quaternary compound selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and a mixture thereof. The Group IV element may be selected from the group consisting of Si, Ge, and a mixture thereof. The IV compound may be a binary compound selected from the group consisting of SiC, SiGe, and a mixture thereof. In this embodiment, the binary compound, the ternary compound, or the quaternary compound may be present in particles at a uniform (e.g., substantially uniform) concentration or in the same particle by being partially divided into different concentrations. In addition, one quantum dot may have a core-shell structure surrounding another quantum dot. An interface between a core and a shell may have a concentration gradient where a concentration of elements present in the shell decreases toward the core. In some embodiments, the quantum dot may have a core-shell structure including a core including the nanocrystals described above and a shell surrounding the core. The shell of the quantum dot may serve as a protective layer for preventing or reducing chemical denaturation of the core to maintain semiconductor characteristics and/or as a charging layer for imparting electrophoretic characteristics to the quantum dot. The shell may be monolayer or multilayer. An interface between a core and a shell may have a concentration gradient where a concentration of elements present in the shell decreases toward the core. Examples of the shell of the quantum dot include metal or nonmetal oxide, a semiconductor compound, or a combination thereof. In some embodiments, the metal or nonmetal oxide may be a binary compound such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, or NiO or a ternary compound such as MgAl2O4, CoFe2O4, NiFe2O4, or CoMn2O4, but the present disclosure is not limited thereto. In addition, the semiconductor compound may be CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, or AlSb, but the present disclosure is not limited thereto. The quantum dot may have a full width of half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, about 40 nm or less, or about 30 nm or less. When the FWHM of the emission wavelength spectrum of the quantum dot is within this range, color purity or color reproducibility may be improved. In addition, because light emitted through the quantum dot is emitted in all directions, an optical viewing angle may be improved. In addition, the form of the quantum dot may be a form generally used in the art and is not particularly limited. The quantum dot may be a spherical form, a pyramidal form, a multi-armed form, or a cubic nanoparticle, a nanotube, a nanowire, a nanofiber, a nano-plate particle, or the like. The quantum dot may control color of emitted light according to the particle size. Accordingly, the quantum dot may have various suitable emission colors such as blue, red, or green. Electron Transport Region in Organic Layer150 The electron transport region may have i) a single-layered structure including (e.g., consisting of) a single layer including (e.g., consisting of) a single material, ii) a single-layered structure including (e.g., consisting of) a single layer including a plurality of different materials, or iii) a multi-layered structure each having a plurality of layers, each having a plurality of different materials. The electron transport region may include at least one selected from a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, and an electron injection layer, but the present disclosure is not limited thereto. In some embodiments, the electron transport region may have an electron transport layer/electron injection layer structure, a hole blocking layer/electron transport layer/electron injection layer structure, an electron control layer/electron transport layer/electron injection layer structure, or a buffer layer/electron transport layer/electron injection layer structure, wherein layers of each structure are sequentially stacked on the emission layer in each stated order, but the present disclosure is not limited thereto. The electron transport region (for example, the buffer layer, the hole blocking layer, the electron control layer, or the electron transport layer in the electron transport region) may include a metal-free compound including at least one 7 electron-depleted nitrogen-containing ring. The term “7 electron-depleted nitrogen-containing ring,” as used herein, refers to a C1-C60heterocyclic group having at least one *—N═*′ moiety as a ring-forming moiety. For example, the “7 electron-depleted nitrogen-containing ring” may be i) a 5-membered to 7-membered heteromonocyclic group having at least one *—N═*′ moiety, ii) a heteropolycyclic group in which at least two 5-membered to 7-membered heteromonocyclic groups, each having at least one *—N═*′ moiety, are condensed (e.g., combined together), or iii) a heteropolycyclic group in which at least one of a 5-membered to 7-membered heteromonocyclic group, each having at least one *—N═*′ moiety, is condensed with (e.g., combined with) at least one C5-C60carbocyclic group. Examples of the π electron-depleted nitrogen-containing ring may include imidazole, pyrazole, thiazole, isothiazole, oxazole, isoxazole, pyridine, pyrazine, pyrimidine, pyridazine, indazole, purine, quinoline, isoquinoline, benzoquinoline, phthalazine, naphthyridine, quinoxaline, quinazoline, cinnoline, phenanthridine, acridine, phenanthroline, phenazine, benzimidazole, benzoisothiazole, benzoxazole, benzoisoxazole, triazole, tetrazole, oxadiazole, triazine, thiadiazole, imidazopyridine, imidazopyrimidine, and azacarbazole, but the present disclosure is not limited thereto. In some embodiments, the electron transport region may include a compound represented by Formula 601: [Ar601]xe11-[(L601)xe1-R601]xe21Formula 601wherein, in Formula 601, Ar601may be selected from a substituted or unsubstituted C5-C60carbocyclic group and a substituted or unsubstituted C1-C60heterocyclic group,xe11 may be 1, 2, or 3,L601may be selected from a substituted or unsubstituted C3-C10cycloalkylene group, a substituted or unsubstituted C1-C10heterocycloalkylene group, a substituted or unsubstituted C3-C10cycloalkenylene group, a substituted or unsubstituted C1-C10heterocycloalkenylene group, a substituted or unsubstituted C6-C60arylene group, a substituted or unsubstituted C1-C60heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,xe1 may be an integer from 0 to 5,R601may be selected from a substituted or unsubstituted C3-C10cycloalkyl group, a substituted or unsubstituted C1-C10heterocycloalkyl group, a substituted or unsubstituted C3-C10cycloalkenyl group, a substituted or unsubstituted C1-C10heterocycloalkenyl group, a substituted or unsubstituted C6-C60aryl group, a substituted or unsubstituted C6-C60aryloxy group, a substituted or unsubstituted C6-C60arylthio group, a substituted or unsubstituted C1-C60heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, —Si(Q601)(Q602)(Q603), —C(═O)(Q601), —S(═O)2(Q601), and —P(═O)(Q601)(Q602),wherein Q601to Q603may each independently be a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, or a naphthyl group, andxe21 may be an integer from 1 to 5. In some embodiments, at least one selected from Ar601(s) in the number of xe11 and R601(S) in the number of xe21 may include the π electron-depleted nitrogen-containing ring. In some embodiments, in Formula 601, Ar601may be selected from:a benzene group, a naphthalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, a dibenzofuran group, a dibenzothiophene group, a carbazole group, an imidazole group, a pyrazole group, a thiazole group, an isothiazole group, an oxazole group, an isoxazole group, a pyridine group, a pyrazine group, a pyrimidine group, a pyridazine group, an indazole group, a purine group, a quinoline group, an isoquinoline group, a benzoquinoline group, a phthalazine group, a naphthyridine group, a quinoxaline group, a quinazoline group, a cinnoline group, a phenanthridine group, an acridine group, a phenanthroline group, a phenazine group, a benzimidazole group, a benzoisothiazole group, a benzoxazole group, a benzoisoxazole group, a triazole group, a tetrazole group, an oxadiazole group, a triazine group, a thiadiazole group, an imidazopyridine group, an imidazopyrimidine group, and an azacarbazole group; anda benzene group, a naphthalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, a dibenzofuran group, a dibenzothiophene group, a carbazole group, an imidazole group, a pyrazole group, a thiazole group, an isothiazole group, an oxazole group, an isoxazole group, a pyridine group, a pyrazine group, a pyrimidine group, a pyridazine group, an indazole group, a purine group, a quinoline group, an isoquinoline group, a benzoquinoline group, a phthalazine group, a naphthyridine group, a quinoxaline group, a quinazoline group, a cinnoline group, a phenanthridine group, an acridine group, a phenanthroline group, a phenazine group, a benzimidazole group, a benzoisothiazole group, a benzoxazole group, a benzoisoxazole group, a triazole group, a tetrazole group, an oxadiazole group, a triazine group, a thiadiazole group, an imidazopyridine group, an imidazopyrimidine group, and an azacarbazole group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, —Si(Q31)(Q32)(Q33), —S(═O)2(Q31), and —P(═O)(Q31)(Q32),wherein Q31to Q33may each independently be selected from a C1-C10alkyl group, a C1-C10alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group. When xe11 in Formula 601 is 2 or greater, at least two Ar601(s) may be bound via a single bond. In one or more embodiments, Ar601in Formula 601 may be an anthracene group. In some embodiments, the compound represented by Formula 601 may be represented by Formula 601-1: wherein, in Formula 601-1,X614may be N or C(R614), X615may be N or C(R615), X616may be N or C(R616), at least one selected from X614to X616may be N,L611to L613may each independently be understood by referring to the description of L601provided herein,xe611 to xe613 may each independently be understood by referring to the description of xe1 provided herein,R611to R613may each independently be understood by referring to the description of R601provided herein, andR614to R616may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an am idino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group. In some embodiments, in Formulae 601 and 601-1, L601and L611to L613may each independently be selected from:a phenylene group, a naphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a thiophenylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothiophenylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, a pyridinylene group, an imidazolylene group, a pyrazolylene group, a thiazolylene group, an isothiazolylene group, an oxazolylene group, an isoxazolylene group, a thiadiazolylene group, an oxadiazolylene group, a pyrazinylene group, a pyrimidinylene group, a pyridazinylene group, a triazinylene group, a quinolinylene group, an isoquinolinylene group, a benzoquinolinylene group, a phthalazinylene group, a naphthyridinylene group, a quinoxalinylene group, a quinazolinylene group, a cinnolinylene group, a phenanthridinylene group, an acridinylene group, a phenanthrolinylene group, a phenazinylene group, benzimidazolylene group, a benzoisothiazolylene group, a benzoxazolylene group, a benzoisoxazolylene group, a triazolylene group, a tetrazolylene group, an imidazopyridinylene group, an imidazopyrimidinylene group and an azacarbazolylene group; anda phenylene group, a naphthylene group, a fluorenylene group, a spiro-bifluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a thiophenylene group, a furanylene group, a carbazolylene group, an indolylene group, an isoindolylene group, a benzofuranylene group, a benzothiophenylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a dibenzosilolylene group, a pyridinylene group, an imidazolylene group, a pyrazolylene group, a thiazolylene group, an isothiazolylene group, an oxazolylene group, an isoxazolylene group, a thiadiazolylene group, an oxadiazolylene group, a pyrazinylene group, a pyrimidinylene group, a pyridazinylene group, a triazinylene group, a quinolinylene group, an isoquinolinylene group, a benzoquinolinylene group, a phthalazinylene group, a naphthyridinylene group, a quinoxalinylene group, a quinazolinylene group, a cinnolinylene group, a phenanthridinylene group, an acridinylene group, a phenanthrolinylene group, a phenazinylene group, a benzimidazolylene group, a benzoisothiazolylene group, a benzoxazolylene group, a benzoisoxazolylene group, a triazolylene group, a tetrazolylene group, an imidazopyridinylene group, an imidazopyrimidinylene group, and an azacarbazolylene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an am idino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzoisothiazolyl group, a benzoxazolyl group, a benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, and an azacarbazolyl group,but the present disclosure is not limited thereto. In one or more embodiments, in Formulae 601 and 601-1, xe1 and xe611 to xe613 may each independently be 0, 1, or 2. In one or more embodiments, in Formulae 601 and 601-1, R601and R611to R613may each independently be selected from:a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzoisothiazolyl group, a benzoxazolyl group, a benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, and an azacarbazolyl group;a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzoisothiazolyl group, a benzoxazolyl group, a benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, and an azacarbazolyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20alkyl group, a C1-C20alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a dibenzosilolyl group, a pyridinyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a thiadiazolyl group, an oxadiazolyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzoisothiazolyl group, a benzoxazolyl group, a benzoisoxazolyl group, a triazolyl group, a tetrazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, and an azacarbazolyl group; and—S(═O)2(Q601) and —P(═O)(Q601)(Q602),wherein Q601and Q602may respectively be understood by referring to the descriptions of Q601and Q602provided herein. The electron transport region may include at least one compound selected from Compounds ET1 to ET36, but the present disclosure is not limited thereto: In some embodiments, the electron transport region may include at least one compound selected from 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ), and NTAZ: The thicknesses of the buffer layer, the hole blocking layer, or the electron control layer may each independently be in a range of about 20 Å to about 1,000 Å, and in some embodiments, about 30 Å to about 300 Å. When the thicknesses of the buffer layer, the hole blocking layer or the electron control layer are within any of the foregoing ranges, excellent hole blocking characteristics or excellent electron controlling characteristics may be obtained without a substantial increase in driving voltage. The thickness of the electron transport layer may be in a range of about 100 Å to about 1,000 Å, and in some embodiments, about 150 Å to about 500 Å. When the thickness of the electron transport layer is within any of the foregoing ranges, excellent electron transport characteristics may be obtained without a substantial increase in driving voltage. The electron transport region (for example, the electron transport layer in the electron transport region) may further include, in addition to the materials described above, a metal-containing material. The metal-containing material may include at least one selected from an alkali metal complex and an alkaline earth metal complex. The alkali metal complex may include a metal ion selected from a lithium (Li) ion, a sodium (Na) ion, a potassium (K) ion, a rubidium (Rb) ion, and a cesium (Cs) ion. The alkaline earth metal complex may include a metal ion selected from a beryllium (Be) ion, a magnesium (Mg) ion, a calcium (Ca) ion, a strontium (Sr) ion, and a barium (Ba) ion. Each ligand coordinated with the metal ion of the alkali metal complex and the alkaline earth metal complex may independently be selected from hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, and cyclopentadiene, but the present disclosure is not limited thereto. For example, the metal-containing material may include a Li complex. The Li complex may include, e.g., Compound ET-D1 (LiQ) or Compound ET-D2: The electron transport region may include an electron injection layer that facilitates injection of electrons from the second electrode190. The electron injection layer may be in direct contact (e.g., physical contact) with the second electrode190. The electron injection layer may have i) a single-layered structure including (e.g., consisting of) a single layer including (e.g., consisting of) a single material, ii) a single-layered structure including (e.g., consisting of) a single layer including a plurality of different materials, or iii) a multi-layered structure having a plurality of layers, each including a plurality of different materials. The electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, a rare earth metal compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or a combination thereof. The alkali metal may be selected from Li, Na, K, Rb, and Cs. In some embodiments, the alkali metal may be Li, Na, or Cs. In one or more embodiments, the alkali metal may be Li or Cs, but the present disclosure is not limited thereto. The alkaline earth metal may be selected from Mg, Ca, Sr, and Ba. The rare earth metal may be selected from Sc, Y, Ce, Tb, Yb, and Gd. The alkali metal compound, the alkaline earth metal compound, and the rare earth metal compound may each independently be selected from oxides and halides (e.g., fluorides, chlorides, bromides, or iodines) of the alkali metal, the alkaline earth metal, and the rare earth metal, respectively. The alkali metal compound may be selected from alkali metal oxides, such as Li2O, Cs2O, or K2O, and alkali metal halides, such as LiF, NaF, CsF, KF, LiI, NaI, CsI, KI, or RbI. In some embodiments, the alkali metal compound may be selected from LiF, Li2O, NaF, LiI, NaI, CsI, and KI, but the present disclosure is not limited thereto. The alkaline earth-metal compound may be selected from alkaline earth-metal compounds, such as BaO, SrO, CaO, BaxSr1-xO (wherein 0<x<1), and BaxCa1-xO (wherein 0<x<1). In some embodiments, the alkaline earth metal compound may be selected from BaO, SrO, and CaO, but the present disclosure is not limited thereto. The rare earth metal compound may be selected from YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, and TbF3. In some embodiments, the rare earth metal compound may be selected from YbF3, ScF3, TbF3, YbI3, ScI3, and TbI3, but the present disclosure is not limited thereto. The alkali metal complex, the alkaline earth metal complex, and the rare earth metal complex may each include ions of the above-described alkali metal, alkaline earth metal, and rare earth metal. Each ligand coordinated with the metal ion of the alkali metal complex, the alkaline earth metal complex, and the rare earth metal complex may independently be selected from hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, and cyclopentadiene, but the present disclosure is not limited thereto. The electron injection layer may include (e.g., consist of) an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, a rare earth metal compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or a combination thereof, as described above. In some embodiments, the electron injection layer may further include an organic material. When the electron injection layer further includes an organic material, the alkali metal, the alkaline earth metal, the rare earth metal, the alkali metal compound, the alkaline earth metal compound, the rare earth metal compound, the alkali metal complex, the alkaline earth metal complex, the rare earth metal complex, or a combination thereof may be homogeneously or non-homogeneously dispersed in a matrix including the organic material. The thickness of the electron injection layer may be in a range of about 1 Å to about 100 Å, and in some embodiments, about 3 Å to about 90 Å. When the thickness of the electron injection layer is within any of the foregoing ranges, excellent electron injection characteristics may be obtained without a substantial increase in driving voltage. Second Electrode190 The second electrode190may be on the organic layer150. In an embodiment, the second electrode190may be a cathode that is an electron injection electrode. In this embodiment, a material for forming the second electrode190may be a material having a low work function, for example, a metal, an alloy, an electrically conductive compound, or a combination thereof. The second electrode190may include at least one selected from lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), magnesium-silver (Mg—Ag), silver-magnesium (Ag—Mg), ytterbium (Yb), silver-ytterbium (Ag—Yb), ITO, and IZO, but the present disclosure is not limited thereto. The second electrode190may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode. The second electrode190may have a single-layered structure, or a multi-layered structure including two or more layers. Description ofFIGS.2to4 Referring toFIG.2, an organic light-emitting device20has a first capping layer210, the first electrode110, the organic layer150, and the second electrode190structure, wherein the layers are sequentially stacked in this stated order. Referring toFIG.3, an organic light-emitting device30has the first electrode110, the organic layer150, the second electrode190, and a second capping layer220structure, wherein the layers are sequentially stacked in this stated order. Referring toFIG.4, an organic light-emitting device40has the first capping layer210, the first electrode110, the organic layer150, the second electrode190, and the second capping layer220structure, wherein the layers are stacked in this stated order. The first electrode110, the organic layer150, and the second electrode190illustrated inFIGS.2to4may be substantially the same as those illustrated inFIG.1. In the organic light-emitting devices20and40, light emitted from the emission layer in the organic layer150may pass through the first electrode110(which may be a semi-transmissive electrode or a transmissive electrode) and through the first capping layer210to the outside. In the organic light-emitting devices30and40, light emitted from the emission layer in the organic layer150may pass through the second electrode190(which may be a semi-transmissive electrode or a transmissive electrode) and through the second capping layer220to the outside. The first capping layer210and the second capping layer220may improve the external luminescence efficiency based on the principle of constructive interference. The first capping layer210and the second capping layer220may each independently have a refractive index of 1.6 or greater at a wavelength of 589 nm. The first capping layer210and the second capping layer220may each independently be a capping layer including an organic material, an inorganic capping layer including an inorganic material, or a composite capping layer including an organic material and an inorganic material. At least one of the first capping layer210and the second capping layer220may each independently include at least one material selected from carbocyclic compounds, heterocyclic compounds, amine-based compounds, porphine derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, alkali metal complexes, and alkaline earth metal complexes. The carbocyclic compound, the heterocyclic compound, and the amine group-containing compound may optionally be substituted with a substituent containing at least one element selected from O, N, S, Se, Si, F, Cl, Br, and I. In some embodiments, at least one of the first capping layer210and the second capping layer220may each independently include an amine-based compound. In one or more embodiments, at least one of the first capping layer210and the second capping layer220may each independently include a compound represented by Formula 201 or a compound represented by 202. In one or more embodiments, at least one of the first capping layer210and the second capping layer220may each independently include a compound selected from Compounds HT28 to HT33 and Compound CP1 to CP5, but the present disclosure is not limited thereto: Hereinbefore, the organic light-emitting device has been described with reference toFIGS.1to4, but the present disclosure is not limited thereto. Electronic Apparatus The organic light-emitting device may be included in various suitable electronic apparatuses. In some embodiments, an electronic apparatus including the organic light-emitting device may be an emission apparatus or an authentication apparatus. The electronic apparatus (e.g., an emission apparatus) may further include, in addition to the organic light-emitting device, i) a color filter, ii) a color-conversion layer, or iii) a color filter and a color-conversion layer. The color filter and/or the color-conversion layer may be on at least one traveling direction of light emitted from the organic light-emitting device. For example, light emitted from the organic light-emitting device may be blue light or white light. The organic light-emitting device may be understood by referring to the description of the organic light-emitting device provided herein. In some embodiments, the color-conversion layer may include a quantum dot. The quantum dot may be, for example, the quantum dot described herein. The electronic apparatus may include a first substrate. The first substrate may include a plurality of sub-pixel areas, the color filter may include a plurality of color filter areas respectively corresponding to the plurality of sub-pixel areas, and the color-conversion layer may include a plurality of color-conversion areas respectively corresponding to the plurality of sub-pixel areas. A pixel defining film may be located between the plurality of sub-pixel areas to define each sub-pixel area. The color filter may further include a plurality of color filter areas and light-blocking patterns between the plurality of color filter areas, and the color-conversion layer may further include a plurality of color-conversion areas and light-blocking patterns between the plurality of color-conversion areas. The plurality of color filter areas (or a plurality of color-conversion areas) may include: a first area emitting first color light; a second area emitting second color light; and/or a third area emitting third color light, and the first color light, the second color light, and/or the third color light may have different maximum emission wavelengths. In some embodiments, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. In some embodiments, the plurality of color filter areas (or the plurality of color-conversion areas) may each include a quantum dot. In some embodiments, the first area may include a red quantum dot, the second area may include a green quantum dot, and the third area may not include a quantum dot. The quantum dot may be understood by referring to the description of the quantum dot provided herein. The first area, the second area, and/or the third area may each further include an emitter. In some embodiments, the organic light-emitting device may emit first light, the first area may absorb the first light to emit 1-1 color light (e.g., a first first color light), the second area may absorb the first light to emit 2-1 color light (e.g., a second first color light), and the third area may absorb the first light to emit 3-1 color light (e.g., a third first color light). In this embodiment, the 1-1 color light (e.g., the first first color light), the 2-1 color light (e.g., the second first color light), and the 3-1 color light (e.g., the third first color light) may each have a different maximum emission wavelength. In some embodiments, the first light may be blue light, the 1-1 color light (e.g., the first first color light) may be red light, the 2-1 color light (e.g., the second first color light) may be green light, and the 3-1 light (e.g., the third first color light) may be blue light. The electronic apparatus may further include a thin-film transistor, in addition to the organic light-emitting device. The thin-film transistor may include a source electrode, a drain electrode, and an activation layer, wherein one of the source electrode and the drain electrode may be electrically coupled to one of the first electrode and the second electrode of the organic light-emitting device. The thin-film transistor may further include a gate electrode, a gate insulating film, and/or the like. The activation layer may include a crystalline silicon, an amorphous silicon, an organic semiconductor, and/or an oxide semiconductor. The electronic apparatus may further include a sealing portion for sealing the organic light-emitting device. The sealing portion may be located between the color filter and/or the color-conversion layer and the organic light-emitting device. The sealing portion may allow light to pass to the outside from the organic light-emitting device and prevent or reduce permeation of air and moisture into the organic light-emitting device at the same time. The sealing portion may be a sealing substrate including a transparent glass and/or a plastic substrate. The sealing portion may be a thin-film encapsulating layer including at least one of an organic layer and/or an inorganic layer. When the sealing portion is a thin film encapsulating layer, the electronic apparatus may be flexible. In addition to the color filter and/or the color-conversion layer, various suitable functional layers may be on the sealing portion depending on the use of an electronic apparatus. Examples of the functional layer may include a touch screen layer, a polarization layer, and/or the like. The touch screen layer may be a resistive touch screen layer, a capacitive touch screen layer, and/or an infrared beam touch screen layer. The authentication apparatus may be, for example, a biometric authentication apparatus that identifies an individual according biometric information (e.g., a fingertip, a pupil, and/or the like). The authentication apparatus may further include a biometric information collecting unit, in addition to the organic light-emitting device described above. The electronic apparatus may be applicable in various suitable displays, an optical source, lighting, a personal computer (e.g., a mobile personal computer), a cellphone, a digital camera, an electronic note, an electronic dictionary, an electronic game console, a medical device (e.g., an electronic thermometer, a blood pressure meter, a glucometer, a pulse measuring device, a pulse wave measuring device, an electrocardiograph recorder, an ultrasonic diagnosis device, and/or an endoscope display device), a fish finder, various suitable measurement devices, gauges (e.g., gauges of an automobile, an airplane, and/or a ship), and/or a projector. The layers constituting the hole transport region, the emission layer, and the layers constituting the electron transport region may be formed in a set or specific region by using one or more suitable methods such as vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, ink-jet printing, laser printing, and/or laser-induced thermal imaging. When the layers constituting the hole transport region, the emission layer, and the layers constituting the electron transport region are each formed by vacuum deposition, the vacuum deposition may be performed at a deposition temperature in a range of about 100° C. to about 500° C. at a vacuum degree in a range of about 10−8torr to about 10−3torr, and at a deposition rate in a range of about 0.01 Angstroms per second (Å/sec) to about 100 Å/sec, depending on the material to be included in each layer and the structure of each layer to be formed. When the layers constituting the hole transport region, the emission layer, and the layers constituting the electron transport region are each formed by spin coating, the spin coating may be performed at a coating rate of about 2,000 revolutions per minute (rpm) to about 5,000 rpm and at a heat treatment temperature of about 80° C. to about 200° C., depending on the material to be included in each layer and the structure of each layer to be formed. General Definitions of Substituents The term “C1-C60alkyl group,” as used herein, refers to a linear or branched aliphatic hydrocarbon monovalent group having 1 to 60 carbon atoms. Examples thereof include a methyl group, an ethyl group, a propyl group, an iso-butyl group, a sec-butyl group, a tert-butyl group, a pentyl group, an iso-amyl group, and a hexyl group. The term “C1-C60alkylene group,” as used herein, refers to a divalent group having substantially the same structure as the C1-C60alkyl group. The term “C2-C60alkenyl group,” as used herein, refers to a hydrocarbon group having at least one carbon-carbon double bond at a main chain (e.g., in the middle) or at a terminal end (e.g., the terminus) of the C2-C60alkyl group. Examples thereof include an ethenyl group, a propenyl group, and a butenyl group. The term “C2-C60alkenylene group,” as used herein, refers to a divalent group having substantially the same structure as the C2-C60alkenyl group. The term “C2-C60alkynyl group,” as used herein, refers to a hydrocarbon group having at least one carbon-carbon triple bond at a main chain (e.g., in the middle) or at a terminal end (e.g., the terminus) of the C2-C60alkyl group. Examples thereof include an ethynyl group and a propynyl group. The term “C2-C60alkynylene group,” as used herein, refers to a divalent group having substantially the same structure as the C2-C60alkynyl group. The term “C1-C60alkoxy group,” as used herein, refers to a monovalent group represented by —OA101(wherein A101is a C1-C1alkyl group). Examples thereof include a methoxy group, an ethoxy group, and an isopropyloxy group. The term “C3-C10cycloalkyl group,” as used herein, refers to a monovalent monocyclic saturated hydrocarbon group including 3 to 10 carbon atoms. Examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, and a cycloheptyl group. The term “C3-C10cycloalkylene group,” as used herein, refers to a divalent group having substantially the same structure as the C3-C10cycloalkyl group. The term “C1-C10heterocycloalkyl group,” as used herein, refers to a monovalent monocyclic group including at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom and 1 to 10 carbon atoms. Examples thereof include a 1,2,3,4-oxatriazolidinyl group, a tetrahydrofuranyl group, and a tetrahydrothiophenyl group. The term “C1-C10heterocycloalkylene group,” as used herein, refers to a divalent group having substantially the same structure as the C1-C10heterocycloalkyl group. The term “C3-C10cycloalkenyl group,” as used herein, refers to a monovalent monocyclic group that has 3 to 10 carbon atoms and at least one double bond in its ring, and is not aromatic. Examples thereof include a cyclopentenyl group, a cyclohexenyl group, and a cycloheptenyl group. The term “C3-C10cycloalkenylene group,” as used herein, refers to a divalent group having substantially the same structure as the C3-C10cycloalkenyl group. The term “C1-C10heterocycloalkenyl group,” as used herein, refers to a monovalent monocyclic group including at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom, 1 to 10 carbon atoms, and at least one double bond in its ring. Examples of the C1-C10heterocycloalkenyl group include a 4,5-dihydro-1,2,3,4-oxatriazolylgroup, a 2,3-dihydrofuranyl group, and a 2,3-dihydrothiophenyl group. The term “C1-C10heterocycloalkylene group,” as used herein, refers to a divalent group having substantially the same structure as the C1-C10heterocycloalkyl group. The term “C6-C60aryl group,” as used herein, refers to a monovalent group having a carbocyclic aromatic system having 6 to 6 carbon atoms. The term “C6-C60arylene group,” as used herein, refers to a divalent group having a carbocyclic aromatic system having 6 to 60 carbon atoms. Examples of the C6-C60aryl group include a fluorenyl group, a phenyl group, a naphthyl group, an anthracenyl group, a phenanthrenyl group, a pyrenyl group, and a chrysenyl group. When the C6-C60aryl group and the C6-C60arylene group each independently include two or more rings, the respective rings may be fused (e.g., combined together). The term “C1-C60heteroaryl group,” as used herein, refers to a monovalent group having a heterocyclic aromatic system having at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom and 1 to 60 carbon atoms. The term “C1-C60heteroarylene group,” as used herein, refers to a divalent group having a heterocyclic aromatic system having at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom and 1 to 60 carbon atoms. Examples of the C1-C60heteroaryl group include a carbazolyl group, a pyridinyl group, a pyrimidinyl group, a pyrazinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, and an isoquinolinyl group. When the C1-C60heteroaryl group and the C1-C60heteroarylene group each independently include two or more rings, the respective rings may be fused (e.g., combined together). The term “C6-C60aryloxy group,” as used herein, is represented by —OA102(wherein A102is the C6-C60aryl group). The term “C6-C60arylthio group,” as used herein, is represented by —SA103(wherein A103is the C6-C60aryl group). The term “monovalent non-aromatic condensed polycyclic group,” as used herein, refers to a monovalent group that has two or more rings condensed (e.g., combined together) and only carbon atoms as ring forming atoms (e.g., 8 to 60 carbon atoms), wherein the entire molecular structure is non-aromatic. Examples of the monovalent non-aromatic condensed polycyclic group may include an adamantyl group. The term “divalent non-aromatic condensed polycyclic group,” as used herein, refers to a divalent group having substantially the same structure as the monovalent non-aromatic condensed polycyclic group. The term “monovalent non-aromatic condensed heteropolycyclic group,” as used herein, refers to a monovalent group that has two or more condensed rings and at least one heteroatom selected from N, O, Si, P, and S, in addition to carbon atoms (e.g., 1 to 60 carbon atoms), as a ring-forming atom, wherein the entire molecular structure is non-aromatic. Examples of the monovalent non-aromatic condensed heteropolycyclic group may include an azaadamantyl group. The term “divalent non-aromatic condensed heteropolycyclic group,” as used herein, refers to a divalent group having substantially the same structure as the monovalent non-aromatic condensed heteropolycyclic group. The term “C5-C60carbocyclic group,” as used herein, refers to a monocyclic or polycyclic group having 5 to 60 carbon atoms only as ring-forming atoms. The C5-C60carbocyclic group may be an aromatic carbocyclic group or a non-aromatic carbocyclic group. The term “C5-C60carbocyclic group,” as used herein, refers to a ring (e.g., a benzene group), a monovalent group (e.g., a phenyl group), or a divalent group (e.g., a phenylene group). Also, depending on the number of substituents connected to the C5-C60carbocyclic group, the C5-C60carbocyclic group may be a trivalent group or a quadrivalent group. The term “C1-C60heterocyclic group,” as used herein, refers to a group having substantially the same structure as the C5-C60carbocyclic group, except that at least one heteroatom selected from N, O, Si, P, and S is used as a ring-forming atom, in addition to carbon atoms (e.g., 1 to 60 carbon atoms). In the present specification, at least one of substituents of the substituted C5-C60carbocyclic group, the substituted C1-C60heterocyclic group, the substituted C3-C10cycloalkylene group, the substituted C1-C10heterocycloalkylene group, the substituted C3-C10cycloalkenylene group, the substituted C1-C10heterocycloalkenylene group, the substituted C6-C60arylene group, the substituted C1-C60heteroarylene group, the substituted divalent non-aromatic condensed polycyclic group, the substituted divalent non-aromatic condensed heteropolycyclic group, the substituted C1-C60alkyl group, the substituted C2-C60alkenyl group, the substituted C2-C60alkynyl group, the substituted C1-C60alkoxy group, the substituted C3-C10cycloalkyl group, the substituted C1-C10heterocycloalkyl group, the substituted C3-C10cycloalkenyl group, the substituted C1-C10heterocycloalkenyl group, the substituted C6-C60aryl group, the substituted C6-C60aryloxy group, the substituted C6-C60arylthio group, the substituted C1-C60heteroaryl group, the substituted monovalent non-aromatic condensed polycyclic group, and the substituted monovalent non-aromatic condensed heteropolycyclic group may be selected from:deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, and a C1-C60alkoxy group;a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, and a C1-C60alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —Si(Q11)(Q12)(Q13), —N(Q11)(Q12), —B(Q11)(Q12), —C(═O)(Q11), —S(═O)2(Q11), and —P(═O)(Q11)(Q12);a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group;a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C6-C60aryloxy group, a C6-C60arylthio group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —Si(Q21)(Q22)(Q23), —N(Q21)(Q22), —B(Q21)(Q22), —C(═O)(Q21), —S(═O)2(Q21), and —P(═O)(Q21)(Q22); and—Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)2(Q31), and —P(═O)(Q31)(Q32),wherein Q11to Q13, Q21to Q23, and Q31to Q33may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60alkyl group, a C2-C60alkenyl group, a C2-C60alkynyl group, a C1-C60alkoxy group, a C3-C10cycloalkyl group, a C1-C10heterocycloalkyl group, a C3-C10cycloalkenyl group, a C1-C10heterocycloalkenyl group, a C6-C60aryl group, a C1-C60heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, a biphenyl group, and a terphenyl group. “Ph,” as used herein, represents a phenyl group, “Me,” as used herein, represents a methyl group, “Et,” as used herein, represents an ethyl group, “ter-Bu” or “But,” as used herein, represents a tert-butyl group, and “OMe,” as used herein, represents a methoxy group. The term “biphenyl group,” as used herein, refers to a phenyl group substituted with at least one phenyl group. The “biphenyl group” belongs to “a substituted phenyl group” having a “C6-C60aryl group” as a substituent. The term “terphenyl group,” as used herein, refers to a phenyl group substituted with at least one phenyl group. The “terphenyl group” belongs to “a substituted phenyl group” having a “C6-C60aryl group substituted with a C6-C60aryl group” as a substituent. The symbols * and *′, as used herein, unless defined otherwise, refer to a binding site to an adjacent atom in a corresponding formula. Hereinafter, compounds and an organic light-emitting device according to one or more embodiments will be described in more detail with reference to Synthesis Examples and Examples. The wording “B was used instead of A” used in describing Synthesis Examples means that an amount of B used was identical to an amount of A used in terms of molar equivalents. EXAMPLES Synthesis Example 1: Synthesis of Compound 8 Synthesis of Intermediate 8-1 9H-carbazole (CAS no. 86-74-8) was reacted with 1-bromo-2-fluorobenzene (CAS no. 1072-85-1) in the presence of a Pd catalyst, thereby obtaining Intermediate 8-1. Intermediate 8-1 was subjected to liquid chromatography-mass spectrometry (LC-MS) to identify the M+1 peak value thereof. C18H12BrN: M+1 322.11 Synthesis of Intermediate 8-2 Intermediate 8-1 was reacted with n-BuLi and then with trimethyl borate to obtain Intermediate 8-2. Intermediate 8-2 was subjected to LC-MS to identify the M+1 peak value thereof. C18H14BNO2: M+1 288.01 Synthesis of Intermediate 8-3 Bromo-9H-carbazole (CAS no. 1592-95-6), potassium hydroxide, and 4-toluene sulfonyl chloride were reacted together, thereby obtaining Intermediate 8-3. Intermediate 8-3 was subjected to LC-MS to identify the M+1 peak value thereof. C19H14BrNO2S: M+1 399.87 1-4. Synthesis of Intermediate 8-4 Intermediate 8-3 was reacted with Intermediate 66-3 in the presence of a Pd catalyst, thereby obtaining Intermediate 8-4. Intermediate 8-4 was subjected to LC-MS to identify the M+1 peak value thereof. C41H36N2O2S: M+1 621.13 1-5. Synthesis of Intermediate 8-5 Intermediate 8-4 was reacted with sodium hydroxide, thereby obtaining Intermediate 8-5. Intermediate 8-5 was subjected to LC-MS to identify the M+1 peak value thereof. C34H30N2: M+1 467.25 1-6. Synthesis of Intermediate 8-6 Intermediate 8-5 was reacted with 1-bromo-3-iodobenzene (CAS no. 591-18-4) in the presence of a Cu catalyst, thereby obtaining Intermediate 8-6. Intermediate 8-6 was subjected to LC-MS to identify the M+1 peak value thereof. C40H33BrN2: M+1 621.33 1-7. Synthesis of Compound 8 4 grams (g) of Intermediate 8-6, 1.9 g of Intermediate 8-2, 1.3 g of potassium carbonate, 0.37 g of tetrakis(triphenyl phosphine)palladium (0), 20 milliliters (mL) of tetrahydrofuran, and 5 mL of water were added to a reaction vessel and refluxed for 24 hours. Once the reaction was believed to be complete, the reaction solution was subjected to extraction using ethyl acetate, and the resulting organic layer was dried using magnesium sulfate. Then, the solvent was removed therefrom. The residue obtained by removing the solvent was separated and purified using silica gel column chromatography, thereby obtaining 3.8 g of Compound 8 (yield: 76%). Compound 8 was identified using LC-MS and1H-nuclear magnetic resonance (NMR). Synthesis Example 2: Synthesis of Compound 29 3 g of bromodibenzofuran (CAS no. 86-76-0), 5.9 g of Intermediate 8-5, 1.8 g of sodium tert-butoxide, 0.46 g of tris(dibenzylideneacetone)dipalladium (0), 0.4 mL of tri-tert-butylphosphine, and 60 mL of toluene were added to a reaction vessel and refluxed for 24 hours. Once the reaction was believed to be complete, the reaction solution was subjected to extraction using ethyl acetate, and the resulting organic layer was dried using magnesium sulfate. Then, the solvent was removed therefrom. The residue obtained by removing the solvent was separated and purified using silica gel column chromatography, thereby obtaining 10.8 g of Compound 29 (yield: 85%). Compound 29 was identified using LC-MS and1H-NMR. Synthesis Example 3: Synthesis of Compound 34 10.1 g of Compound 34 was synthesized in substantially the same manner as in Synthesis of Compound 29, except that 2-bromodibenzothiophene (CAS no. 22439-61-8) was used instead of 2-bromodibenzofuran (CAS no. 86-76-0) (yield: 82%). Compound 34 was identified using LC-MS and1H-NMR. Synthesis Example 4: Synthesis of Compound 38 8.7 g of Compound 38 was synthesized in substantially the same manner as in Synthesis of Compound 29, except that 3-bromo-9-phenyl-9H-carbazole (CAS no. 1153-85-1) was used instead of 3-bromodibenzofuran (CAS no. 86-76-0) (yield: 80%). Compound 38 was identified using LC-MS and1H-NMR. Synthesis Example 5: Synthesis of Compound 40 5-1. Synthesis of Intermediate 40-1 Intermediate 8-5 was reacted with 1-bromo-2-fluorobenzene (CAS no. 1072-85-1) in the presence of a Pd catalyst, thereby obtaining Intermediate 40-1. Intermediate 40-1 was subjected to LC-MS to identify the M+1 peak value thereof. C40H33BrN2: M+1 621.24 5-2. Synthesis of Compound 40 5.5 grams (g) of Intermediate 40-1, 3.4 g of (3-(triphenylsilyl)phenyl)boronic acid, 1.7 g of potassium carbonate, 0.46 g of tetrakis(triphenyl phosphine)palladium (0), 25 mL of 1,4-dioxane, and 6 mL of water were added to a reaction vessel and refluxed for 24 hours. Once the reaction was believed to be complete, the reaction solution was subjected to extraction using ethyl acetate, and the resulting organic layer was dried using magnesium sulfate. Then, the solvent was removed therefrom. The residue obtained by removing the solvent was separated and purified using silica gel column chromatography, thereby obtaining 4.8 g of Compound 40 (yield: 68%). Compound 40 was identified using LC-MS and1H-NMR. Synthesis Example 6: Synthesis of Compound 44 7.5 g of Compound 44 was synthesized in substantially the same manner as in Synthesis of Compound 29, except that (3-bromophenyl)triphenyl silane (CAS no. 185626-73-7) was used instead of 2-bromodibenzofuran (CAS no. 86-76-0) (yield: 78%). Compound 44 was identified using LC-MS and1H-NMR. Synthesis Example 7: Synthesis of Compound 59 7.3 g of Compound 59 was synthesized in substantially the same manner as in Synthesis of Compound 29, except that 3-bromo-9,9-diphenyl-9H-fluorene (CAS no. 1547491-70-2) was used instead of 2-bromodibenzofuran (CAS no. 86-76-0) (yield: 75%). Compound 59 was identified using LC-MS and1H-NMR. Synthesis Example 8: Synthesis of Compound 66 8-1. Synthesis of Intermediate 66-1 2-bromo-N-phenylaniline (CAS no. 61613-22-7), 4-(dimethylamino)pyridine (4-DMAP), and dineopentyl dicarbonate (CAS no. 24424-99-5) were reacted to obtain Intermediate 66-1. Intermediate 66-1 was subjected to LC-MS to identify the M+1 peak value thereof. C17H18BrNO2: M+1 348.15 8-2. Synthesis of Intermediate 66-2 Intermediate 66-1 was reacted with n-BuLi and then with 2-adamantane-one (CAS no. 700-58-3) to obtain Intermediate 66-2. Intermediate 66-2 was subjected to LC-MS to identify the M+1 peak value thereof. C27H33NO3: M+1 420.21 8-3. Synthesis of Intermediate 66-3 Intermediate 66-2, acetic acid, and hydrochloric acid were reacted together to obtain Intermediate 66-3. Intermediate 66-3 was subjected to LC-MS to identify the M+1 peak value thereof. C22H23N: M+1 302.31 8-4. Synthesis of Intermediate 66-4 9H-carbazole (CAS no. 86-74-8) was reacted with 2-bromo-1-fluoro-3-iodobenzene (CAS no. 851368-08-6) in the presence of a Pd catalyst to obtain Intermediate 66-4. Intermediate 66-4 was subjected to LC-MS to identify the M+1 peak value thereof. C18H11BrIN: M+1 447.97 8-5. Synthesis of Intermediate 66-5 Intermediate 66-3 was reacted with Intermediate 66-4 in the presence of a Cu catalyst, thereby obtaining Intermediate 66-6. Intermediate 66-5 was subjected to LC-MS to identify the M+1 peak value thereof. C40H33BrN2: M+1 620.24 8-6. Synthesis of Compound 66 3.5 g of Compound 66 was synthesized in substantially the same manner as in Synthesis of Compound 40, except that Intermediate 66-5 was used instead of Intermediate 40-1 (yield: 50%). Compound 66 was identified using LC-MS and1H-NMR. Compounds synthesized in Synthesis Examples 1 to 8 were identified by1H NMR and LC-MS. The results thereof are shown in Table 1. Methods of synthesizing compounds other than compounds shown in Table 1 may be readily understood by those skilled in the art by referring to the synthesis pathways and raw materials described above. TABLE 1LC-MSCompound1H NMR (CDCl3, 400 MHz)foundcalc.88.55 (2H, d), 8.21-8.19 (2H, d), 7.94-7.90 (4H, m),785.12784.027.80-7.46 (8H, m), 7.35-7.33 (4H, m), 7.20-7.16(9H, m), 6.95 (2H, t), 2.17 (2H, q), 1.75-1.72(3H, m), 1.45-1.07 (9H, m)298.55 (1H, d), 7.98-7.94 (2H, d), 7.74 (1H, d),633.84632.817.61-7.54 (3H, m), 7.39-7.31 (6H, m), 7.19-7.16(7H, m), 6.95 (2H, d), 2.17 (2H, q), 1.75-1.72(3H, m), 1.45-1.07 (9H, m)348.55 (1H, d), 8.45 (1H, d), 8.10 (1H, d), 7.94-7.90649.92648.87(3H, m), 7.58-7.35 (7H, m), 7.19-7.16 (7H, m),6.95 (2H, t), 2.17 (2H, q), 1.75-1.72 (3H, m),1.45-1.07 (9H, m)388.55 (2H, d), 7.94 (2H, d), 7.72-7.54 (8H, m),708.91707.927.38-7.33 (5H, m), 7.19-7.16 (8H, m), 6.95 (2H, t),2.17 (2H, q), 1.75-1.72 (3H, m), 1.45-1.07 (9H, m)408.55 (1H, d), 7.94-7.91 (4H, m), 7.54-7.38 (24H, m),878.11877.227.19-7.16 (7H, m), 6.95 (2H, t), 2.17 (2H, q),1.75-1.72 (3H, m), 1.45-1.07 (9H, m)448.55 (1H, d), 7.94 (1H, d), 7.59-7.33 (23H, m),802.04801.127.19-7.16 (7H, m), 6.95 (2H, t), 2.17 (2H, q),1.75-1.72 (3H, m), 1.45-1.07 (9H, m)598.55 (1H, d), 7.96-7.94 (3H, m), 7.69 (1H, d),784.02783.037.55 (2H, m), 7.38-7.16 (23H, m), 6.95 (2H, t),2.17 (2H, q), 1.75-1.72 (3H, m), 1.45-1.07 (9H, m)668.55 (1H, d), 8.19 (1H, d), 7.96-7.94 (2H, m),878.31877.227.58-7.38 (24H, m), 7.20-7.17 (8H, m), 6.95 (2H, t),2.17 (2H, q), 1.75-1.72 (3H, m), 1.45-1.07 (9H, m) Example 1 An ITO substrate having a thickness of 1,200 Å was used as a first electrode (anode). The ITO substrate was sonicated for 5 minutes each using isopropyl alcohol and distilled water, and then irradiated with ultraviolet rays for 30 minutes and exposure to ozone for washing. The washed ITO substrate was mounted in a vacuum-deposition apparatus. N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine (NPB) was vacuum-deposited on the ITO substrate prepared by washing to form a hole injection layer having a thickness of 300 Å. mCP was vacuum-deposited on the hole injection layer to form a hole transport layer having a thickness of 200 Å. Subsequently, Compound 8 (as a host) and Ir(pmp)3(as a dopant) were co-deposited on the hole transport layer to a weight ratio of 92:8 to form an emission layer having a thickness of 250 Å. Then, 3-(4-biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole (TAZ) was deposited on the emission layer to form an electron transport layer having a thickness of 200 Å. LiF was deposited on the electron transport layer to a thickness of 10 Å to form an electron injection layer. Al was vacuum-deposited on the electron injection layer to a thickness of 100 Å to form a second electrode (cathode), thereby forming an LiF/Al electrode. HT28 was vacuum-deposited on the cathode to form a capping layer having a thickness of 700 Å, thereby completing the manufacture of an organic light-emitting device. Materials used in preparation of the organic light-emitting device may be represented by the following formula: Examples 2 to 8 Organic light-emitting devices were manufactured in substantially the same manner as in Example 1, except that the compounds shown in Table 2 were respectively used in the formation of the emission layer. Comparative Examples 1 to 3 Organic light-emitting devices were manufactured in substantially the same manner as in Example 1, except that Compounds C1 to C3 were respectively used in the formation of the emission layer. To evaluate characteristics of the organic light-emitting devices manufactured in Examples 1 to 8 and Comparative Examples 1 to 3, the driving voltage, current efficiency, and maximum quantum efficiency of the organic light-emitting devices at a current density of 10 milliamperes per square centimeter (mA/cm2) were measured. The driving voltage and the current density of the organic light-emitting devices were measured using a source meter (Keithley Instrument, 2400 series). The maximum quantum efficiency of the organic light-emitting devices were measured using Hamamatsu Absolute PL Quantum Yield Measurement System C9920-2-12. In evaluation of the maximum quantum efficiency, luminance/current density was measured using a luminance meter with calibration of wavelength sensitivity, and the maximum external quantum efficiency was calculated on the assumption of the angular luminance distribution (Lambertian) assuming a complete diffusion reflecting surface. The evaluation results of the organic light-emitting devices are shown in Table 2. TABLE 2MaximumDrivingCurrentquantumClassi-EmissionvoltagedensityefficiencyEmissionficationlayer(V)(mA/cm2)(%)colorExample 1Compound4.12.321.7Blue8Example 2Compound4.32.320.8Blue29Example 3Compound4.32.320.8Blue34Example 4Compound3.72.321.3Blue38Example 5Compound4.42.320.4Blue40Example 6Compound4.12.322.8Blue44Example 7Compound3.82.320.5Blue59Example 8Compound4.32.320.3Blue66ComparativeCompound4.62.319.7BlueExample 1C1ComparativeCompound4.72.318.5BlueExample 2C2ComparativeCompound4.92.320.1BlueExample 3C3 As shown in the results of Table 2, the organic light-emitting devices of Examples 1 to 8 were found to have a low driving voltage and a high maximum quantum efficiency, as compared with the organic light-emitting device of Comparative Examples 1 to 3. As apparent from the foregoing description, an organic light-emitting device including the heterocyclic compound may have a low driving voltage, high efficiency, and high maximum quantum efficiency. It should be understood that embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should typically be considered as available for other similar features or aspects in other embodiments. While one or more embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present disclosure as defined by the following claims, and equivalents thereof. | 176,985 |
11944009 | DESCRIPTION OF EMBODIMENT(S) First Exemplary Embodiment Compound A compound according to a first exemplary embodiment is represented by one of formulae (11) to (13) below. In the formulae (11) to (13): R1to R4each independently represent one of groups represent by formulae (1-1) to (1-6) below or one of groups represent by formulae (2-1) to (2-10); at least one of R1to R4is one of the groups represent by the formulae (1-1) to (1-6); and at least one of R1to R4is one of the groups represent by the formulae (2-1) to (2-10). In the formulae (1-1) to (1-6), R11to R16are substituents, R101to R150and R61to R70are each independently a hydrogen atom or a substituent. R101to R150and R61to R70as the substituent are each independently a substituted or unsubstituted aryl group having 6 to 14 ring carbon atoms, a substituted or unsubstituted heterocyclic group having 5 to 14 ring atoms, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted alkysilyl group having 3 to 6 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 6 carbon atoms, a substituted or unsubstituted aryloxy group having 6 to 14 ring carbon atoms, a substituted or unsubstituted arylamino group having 6 to 28 ring carbon atoms, a substituted or unsubstituted alkylamino group having 2 to 12 carbon atoms, a substituted or unsubstituted alkylthio group having 1 to 6 carbon atoms, or a substituted or unsubstituted arylthio group having 6 to 14 ring carbon atoms. R11to R16as the substituent are each independently a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 14 ring carbon atoms, a substituted or unsubstituted heterocyclic group having 5 to 14 ring atoms, a substituted or unsubstituted alkysilyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryloxy group having 6 to 14 ring carbon atoms, a substituted or unsubstituted alkylamino group having 2 to 12 carbon atoms, a substituted or unsubstituted alkylthio group having 1 to 6 carbon atoms, or a substituted or unsubstituted arylthio group having 6 to 14 ring carbon atoms. * each independently represents a bonding position to a carbon atom in a benzene ring in each of the formulae (11) to (13). In the formulae (1-1) to (1-6), when one or more of R101to R110, R111to R120, R121to R130, R131to R140, R141to R150, R61to R70, R11to R16are hydrogen atom(s), it is preferable that all of the hydrogen atom(s) are protium, one or more of the hydrogen atom(s) are deuterium, or all of the hydrogen atom(s) are deuterium. In a form A that is an exemplary form of the exemplary embodiment, R161to R168and R171to R200in the formulae (2-1) to (2-4) are each independently a hydrogen atom or a substituent. R161to R168and R171to R200as the substituent are each independently a halogen atom, a substituted or unsubstituted aryl group having 6 to 14 ring carbon atoms, a substituted or unsubstituted heterocyclic group having 5 to 14 ring atoms, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted alkyl halide group having 1 to 6 carbon atoms, a substituted or unsubstituted alkysilyl group having 3 to 6 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 6 carbon atoms, a substituted or unsubstituted alkoxy halide group having 1 to 6 carbon atoms, a substituted or unsubstituted aryloxy group having 6 to 14 ring carbon atoms, a substituted or unsubstituted alkylamino group having 2 to 12 carbon atoms, a substituted or unsubstituted alkylthio group having 1 to 6 carbon atoms, or a substituted or unsubstituted arylthio group having 6 to 14 ring carbon atoms. * each independently represents a bonding position to a carbon atom of a benzene ring in each of the formulae (11) to (13). The compound in the form A that is an exemplary form of the exemplary embodiment is also preferably a compound represented by a formula (12) or (13). In the form A that is an exemplary form of the exemplary embodiment, it is also preferable that, when the compound represented by one of the formulae (11) to (13) has the group represented by the formula (2-1), R161to R168each independently represent a hydrogen atom or a substituent, and R161to R168as the substituent are each independently a halogen atom, a substituted or unsubstituted aryl group having 6 to 14 ring carbon atoms, a substituted or unsubstituted heterocyclic group having 5 to 14 ring atoms, a substituted or unsubstituted alkyl group having 2 to 6 carbon atoms, a substituted or unsubstituted alkyl halide group having 1 to 6 carbon atoms, a substituted or unsubstituted alkysilyl group having 3 to 6 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 6 carbon atoms, a substituted or unsubstituted alkoxy halide group having 1 to 6 carbon atoms, a substituted or unsubstituted aryloxy group having 6 to 14 ring carbon atoms, a substituted or unsubstituted alkylamino group having 2 to 12 carbon atoms, a substituted or unsubstituted alkylthio group having 1 to 6 carbon atoms, or a substituted or unsubstituted arylthio group having 6 to 14 ring carbon atoms. In the form A that is an exemplary form of the exemplary embodiment, it is also preferable that, when the compound represented by one of the formulae (11) to (13) has the group represented by the formula (2-1), R161to R168each independently represent a hydrogen atom or a substituent, R161, R162, R164, R165, R167and R168as the substituent each independently represent a halogen atom, a substituted or unsubstituted aryl group having 6 to 14 ring carbon atoms, a substituted or unsubstituted heterocyclic group having 5 to 14 ring atoms, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted alkyl halide group having 1 to 6 carbon atoms, a substituted or unsubstituted alkysilyl group having 3 to 6 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 6 carbon atoms, a substituted or unsubstituted alkoxy halide group having 1 to 6 carbon atoms, a substituted or unsubstituted aryloxy group having 6 to 14 ring carbon atoms, a substituted or unsubstituted alkylamino group having 2 to 12 carbon atoms, a substituted or unsubstituted alkylthio group having 1 to 6 carbon atoms, or a substituted or unsubstituted arylthio group having 6 to 14 ring carbon atoms. It is also preferable that R163and R166as the substituent are each independently a halogen atom, a substituted or unsubstituted aryl group having 6 to 14 ring carbon atoms, a substituted or unsubstituted heterocyclic group having 5 to 14 ring atoms, a substituted or unsubstituted alkyl group having 2 to 6 carbon atoms, a substituted or unsubstituted alkyl halide group having 1 to 6 carbon atoms, a substituted or unsubstituted alkysilyl group having 3 to 6 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 6 carbon atoms, a substituted or unsubstituted alkoxy halide group having 1 to 6 carbon atoms, a substituted or unsubstituted aryloxy group having 6 to 14 ring carbon atoms, a substituted or unsubstituted alkylamino group having 2 to 12 carbon atoms, a substituted or unsubstituted alkylthio group having 1 to 6 carbon atoms, or a substituted or unsubstituted arylthio group having 6 to 14 ring carbon atoms. In the formula (2-1), R161to R168each independently represent a hydrogen atom or a substituent. R161to R168as the substituent each independently represent a halogen atom, a substituted or unsubstituted aryl group having 6 to 14 ring carbon atoms, a substituted or unsubstituted heterocyclic group having 5 to 14 ring atoms, a substituted or unsubstituted alkyl halide group having 1 to 6 carbon atoms, a substituted or unsubstituted alkysilyl group having 3 to 6 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 6 carbon atoms, a substituted or unsubstituted alkoxy halide group having 1 to 6 carbon atoms, a substituted or unsubstituted aryloxy group having 6 to 14 ring carbon atoms, a substituted or unsubstituted alkylamino group having 2 to 12 carbon atoms, a substituted or unsubstituted alkylthio group having 1 to 6 carbon atoms, or a substituted or unsubstituted arylthio group having 6 to 14 ring carbon atoms. In the formulae (2-2) to (2-4), R171to R200each independently represent a hydrogen atom or a substituent. R171to R200as the substituent are each independently a halogen atom, a substituted or unsubstituted aryl group having 6 to 14 ring carbon atoms, a substituted or unsubstituted heterocyclic group having 5 to 14 ring atoms, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted alkyl halide group having 1 to 6 carbon atoms, a substituted or unsubstituted alkysilyl group having 3 to 6 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 6 carbon atoms, a substituted or unsubstituted alkoxy halide group having 1 to 6 carbon atoms, a substituted or unsubstituted aryloxy group having 6 to 14 ring carbon atoms, a substituted or unsubstituted alkylamino group having 2 to 12 carbon atoms, a substituted or unsubstituted alkylthio group having 1 to 6 carbon atoms, or a substituted or unsubstituted arylthio group having 6 to 14 ring carbon atoms. * each independently represents a bonding position to a carbon atom of a benzene ring in each of the formulae (11) to (13). In the formulae (2-1) to (2-4), when one or more of R161to R168, R171to R180, R181to R190and R191to R200are hydrogen atom(s), it is preferable that all of the hydrogen atom(s) are protium, one or more of the hydrogen atom(s) are deuterium, or all of the hydrogen atom(s) are deuterium. A compound in a form B that is an exemplary form of the exemplary embodiment is also preferably a compound represented by the formula (12) or (13). In the formulae (2-5) to (2-10): X1to X6each independently represent an oxygen atom, a sulfur atom, or CR151R152, R201to R260each independently represent a hydrogen atom or a substituent; and R151and R152each independently represent a hydrogen atom or a substituent or R151and R152are bonded to each other to form a ring. R201to R260, R151and R152as the substituent are each independently a halogen atom, a substituted or unsubstituted aryl group having 6 to 14 ring carbon atoms, a substituted or unsubstituted heterocyclic group having 5 to 14 ring atoms, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted alkyl halide group having 1 to 6 carbon atoms, a substituted or unsubstituted alkysilyl group having 3 to 6 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 6 carbon atoms, a substituted or unsubstituted alkoxy halide group having 1 to 6 carbon atoms, a substituted or unsubstituted aryloxy group having 6 to 14 ring carbon atoms, a substituted or unsubstituted alkylamino group having 2 to 12 carbon atoms, a substituted or unsubstituted alkylthio group having 1 to 6 carbon atoms, or a substituted or unsubstituted arylthio group having 6 to 14 ring carbon atoms. * each independently represents a bonding position to a carbon atom in a benzene ring in each of the formulae (11) to (13). All of groups represented by formulae (1-1) to (1-6) (hereinafter, also referred to as a “carbazolyl derivative group C1”), groups represented by formulae (2-1) to (2-4) (hereinafter, also referred to as a “carbazolyl derivative group C2A”), and groups represented by formulae (2-5) to (2-10) (hereinafter, also referred to as a “carbazolyl derivative group C2B”) have been known as a group having donor properties. Among the above groups, since a conjugation length of the carbazolyl derivative group C1extends longer than that of the carbazolyl derivative group C2A, an ionization potential tends to become low (an absolute value tends to become small). Moreover, since an electron donating property of the carbazolyl derivative group C1is higher than that of the carbazolyl derivative group C2B, an ionization potential tends to become low (an absolute value tends to become small). Accordingly, when the compound having the carbazolyl derivative group C1is contained, for instance, in the emitting layer, it is considered that hole injectability from the hole transporting layer to the emitting layer is improved to improve charge transportability to the emitting layer. It is considered that the effects of improving the hole injectability and charge transportability is more easily expressed with use of a compound including a cyano group having relatively high acceptor properties as well as a carbazolyl derivative group C1. In contrast, for instance, for a compound formed by bonding four carbazolyl derivative groups C1to a benzene ring of dicyanobenzene, the sublimation temperature for sublimation purification is likely to be increased. A phenomenon that the sublimation temperature of this compound is likely to be increased is more likely to occur than when using a compound in which four carbazolyl derivative groups C2Aare bonded to a benzene ring of dicyanobenzene. This phenomenon is also more likely to occur than when using a compound in which four carbazolyl derivative groups C2Bare bonded to a benzene ring of dicyanobenzene. When the sublimation temperature of the compound is increased, a purifying time is prolonged resulting in reduced purification efficiency. The inventors have found a compound capable of decreasing the sublimation temperature while keeping TADF properties. The compound is formed by bonding four groups in total, selected from the carbazolyl derivative group C1, C2Aand C2Band including the carbazolyl derivative group C1and at least one of the carbazolyl derivative group C2Aand the carbazolyl derivative group C2B, to a benzene ring of dicyanobenzene. In addition, since the carbazolyl derivative group C2Ahas a skeleton having a higher triplet energy than the carbazolyl derivative group C1, it is expected that, for instance, presence of the compound having the carbazolyl derivative group C2Ain the emitting layer can express the function of inhibiting energy deactivation from the triplet state. In addition, since the carbazolyl derivative group C2Balso has a skeleton having a higher triplet energy than the carbazolyl derivative group C1, it is expected that, for instance, presence of the compound having the carbazolyl derivative group C2Bin the emitting layer can express the function of inhibiting energy deactivation from the triplet state. Thus, according to the exemplary embodiment, it is expected that the combined use of the carbazolyl derivative group C1and at least one of the carbazolyl derivative group C2Aand the carbazolyl derivative group C2Bcan keep a balance between the decrease in the sublimation temperature and the maintenance of the TADF properties. As a result, it is expected that the compound capable of decreasing the sublimation temperature for sublimation purification while maintaining the TADF properties can be obtained. Maintaining of the TADF properties herein means, for instance, specifically the “value of XD/XP”, which is measured in Examples, is 0.05 or more. The amount of Prompt emission is denoted by XPand the amount of Delay emission is denoted by XD. Details of the measurement method is described in the description about Examples. In the compound of the exemplary embodiment, when a plurality of groups represented by the formula (1-1) are present as the group for R1to R4, the plurality of groups represented by the formula (1-1) are preferably the same group having the same substituent. In the compound of the exemplary embodiment, when a plurality of groups represented by the formula (1-2) are present as the group for R1to R4, the plurality of groups represented by the formula (1-2) are preferably the same group having the same substituent. In the compound of the exemplary embodiment, when a plurality of groups represented by the formula (1-3) are present as the group for R1to R4, the plurality of groups represented by the formula (1-3) are preferably the same group having the same substituent. In the compound of the exemplary embodiment, when a plurality of groups represented by the formula (1-4) are present as the group of R1to R4, the plurality of groups represented by the formula (1-4) are preferably the same group having the same substituent. In the compound of the exemplary embodiment, when a plurality of groups represented by the formula (1-5) are present as the group for R1to R4, the plurality of groups represented by the formula (1-5) are preferably the same group having the same substituent. When a plurality of groups represented by the formula (1-6) are present as groups for R1to R4, the plurality of groups represented by the formula (1-6) are preferably the same group having the same substituent. For instance, when two groups each represented by the formula (1-1) are selected as the groups for R1and R2and one group represented by the formula (1-2) is selected as the group for R3, and one group represented by the formula (2-1) is selected as the group for R4, the two groups each represented by the formula (1-1) (group for R1and R2) are the same group having the same substituent. For instance, when three groups each represented by the formula (1-1) are selected as the groups for R1to R3, the three groups represented by the formula (1-1) are preferably the same group having the same substituent. In the compound of the exemplary embodiment, when three of the groups represented by the formulae (1-1) to (1-6) are selected as the groups for R1to R4, it is preferable that all of the three groups are represented by one of the formulae (1-1) to (1-6) and are the same group including the substituent. When two of the groups for R1to R4are represented by the formulae (1-1) to (1-6), it is preferable that all of the two groups are represented by one of the formulae (1-1) to (1-6) and are the same group including the substituent. For instance, when two of the groups for R1to R4are selected from the groups represented by the formulae (1-1) to (1-6) and the remaining two thereof are selected from the groups represented by the formulae (2-1) to (2-10), it is preferable that the two groups represented by the formulae (1-1) to (1-6) are represented by one of the formulae (1-1) to (1-6) and are the same group having the same substituent. When three of the groups for R1to R4are selected from the groups represented by the formulae (1-1) to (1-6) and the remaining one thereof is selected from the groups represented by the formulae (2-1) to (2-10), it is preferable that the three groups represented by the formulae (1-1) to (1-6) are represented by one of the formulae (1-1) to (1-6) and are the same group having the same substituent. For instance, when three groups each represented by the formula (1-1) are selected as the groups for R1to R4, it is preferable that the three groups are represented by the formula (1-1) and are the same group having the same substituent. In the compound of the exemplary embodiment, when a plurality of groups each represented by the formula (2-1) are present as the group of R1to R4, the plurality of groups represented by the formula (2-1) are preferably the same group having the same substituent. When a plurality of groups each represented by the formula (2-2) are present as the group for R1to R4, the plurality of groups represented by the formula (2-2) are preferably the same group having the same substituent. When a plurality of groups each represented by the formula (2-3) are present as the group for R1to R4, the plurality of groups represented by the formula (2-3) are preferably the same group having the same substituent. When a plurality of groups each represented by the formula (2-4) are present as groups for R1to R4, the plurality of groups represented by the formula (2-4) are preferably the same group having the same substituent. When a plurality of groups represented by the formula (2-5) are present as the group for R1to R4, the plurality of groups represented by the formula (2-5) are preferably the same group having the same substituent. When a plurality of groups represented by the formula (2-6) are present as the group for R1to R4, the plurality of groups represented by the formula (2-6) are preferably the same group having the same substituent. When a plurality of groups represented by the formula (2-7) are present as the group for R1to R4, the plurality of groups represented by the formula (2-7) are preferably the same group having the same substituent. When a plurality of groups represented by the formula (2-8) are present as the group for R1to R4, the plurality of groups represented by the formula (2-8) are preferably the same group having the same substituent. When a plurality of groups represented by the formula (2-9) are present as the group for R1to R4, the plurality of groups represented by the formula (2-9) are preferably the same group having the same substituent. When a plurality of groups represented by the formula (2-10) are present as the group for R1to R4, the plurality of groups represented by the formula (2-10) are preferably the same group having the same substituent. For instance, when two groups represented by the formula (2-1) are selected as the groups for R1and R2and one group represented by the formula (2-2) is selected as the group for R3, and one group represented by the formula (1-1) is selected as the group for R4, the two groups represented by the formula (2-1) (group for R1and R2) are the same group having the same substituent. Moreover, for instance, when three groups represented by the formula (2-1) are selected as the groups for R1to R3, the three groups represented by the formula (2-1) (the groups for R1to R3) are preferably the same group having the same substituent. In the compound of the exemplary embodiment, it is preferable that, when three of the groups for R1to R4are represented by the formulae (2-1) to (2-10), all of the three groups are represented by one of the formulae (2-1) to (2-10) and are the same group including the substituent, and when two of the groups for R1to R4are represented by the formulae (2-1) to (2-10), all of the two groups are represented by one of the formulae (2-1) to (2-10) and are the same group including the substituent. For instance, when two of the groups for R1to R4are selected from the groups represented by the formulae (2-1) to (2-10) and the remaining two thereof are selected from the groups represented by the formulae (1-1) to (1-6), it is preferable that the two groups represented by the formulae (2-1) to (2-10) are represented by one of the formulae (2-1) to (2-10) and are the same group having the same substituent. When three of the groups for R1to R4are selected from the groups represented by the formulae (2-1) to (2-10) and the remaining one thereof is selected from the groups represented by the formulae (1-1) to (1-6), it is preferable that the three groups represented by the formulae (2-1) to (2-10) are represented by one of the formulae (2-1) to (2-10) and are the same group having the same substituent. For instance, when three groups each represented by the formula (2-1) are selected as the groups for R1to R4, it is preferable that the three groups are represented by the formula (2-1) and are the same group having the same substituent. The compound of the exemplary embodiment is preferably a compound represented by one of formulae (101) to (123). In the formulae (101) to (123): D1is each independently one of the groups represented by the formulae (1-1) to (1-6); D2is each independently one of the groups represented by the formulae (2-1) to (2-10); a plurality of D1are mutually the same or different; and a plurality of D2are mutually the same or different. In the compound of the exemplary embodiment, D1in the formulae (101) to (123) are preferably mutually the same group. In the compound of the exemplary embodiment, D2in the formulae (101) to (123) are preferably mutually the same group. In the compound of the exemplary embodiment, it is more preferable that D1is the same group and D2is the same group in the formulae (101) to (123). The compound of the exemplary embodiment is preferably the compound represented by the formula (101), (103), (106) to (108), (110) to (112), (116) to (119), or (121). The compound of the exemplary embodiment is more preferably the compound represented by the formula (103), (107), (108), (112), (118), or (121). In the compound of the exemplary embodiment, each of the groups that are to be represented by the formulae (1-1) to (1-6) is preferably the group represented by one of the formulae (1-1), (1-2), (1-4), (1-5), and (1-6). In the compound of the exemplary embodiment, each of the groups that are to be represented by the formulae (1-1) to (1-6) are more preferably the group represented by one of the formulae (1-2), (1-4), and (1-6). In the compound of the exemplary embodiment, each of the groups that are to be represented by the formulae (2-1) to (2-10) is preferably the group represented by one of the formulae (2-2) to (2-10). In the compound of the exemplary embodiment, each of the groups that are to be represented by the formulae (2-1) to (2-10) is more preferably the group represented by the formula (2-2), the group represented by the formula (2-3), or the group represented by the formula (2-4). In the compound of the exemplary embodiment, all the groups represented by the formulae (2-1) to (2-10) are also preferably the group represented by the formulae (2-1). When the compound in the exemplary embodiment has a group represented by the formula (2-1), R161to R168each independently preferably represent a hydrogen atom, or a substituted or unsubstituted aryl group having 6 to 14 ring carbon atoms. When the compound in the exemplary embodiment has a group represented by the formula (2-1), it is also preferable that at least one of R161, R163, R166and R168is a substituent, and the substituent each independently is a substituted or unsubstituted aryl group having 6 to 14 ring carbon atoms, and R162, R164, R165and R167are hydrogen atoms. In the compound of the exemplary embodiment, the group represented by each of the formulae (2-1) to (2-10) is preferably one of the groups represented by the formulae (2A-1) to (2A-7). In the formulae (2A-1) to (2A-7), * each independently represents a bonding position to a carbon atom of a benzene ring in each of the formulae (11) to (13). D represents deuterium. More preferably, the compound of the exemplary embodiment is the compound represented by one of the formulae (101), (103), (106) to (108), (110) to (112), (116) to (119), and (121), D1is each independently the group represented by one of the formulae (1-1), (1-2), (1-4), (1-5), and (1-6), and D2is each independently the group represented by one of the formulae (2A-1) to (2A-6). It should be noted that a plurality of D1are mutually the same or different and a plurality of D2are mutually the same or different. Further preferably, the compound of the exemplary embodiment is the compound represented by one of the formulae (103), (107), (108), (112), (118), and (121), D1is each independently the group represented by one of the formulae (1-1), (1-2), (1-4), (1-5), and (1-6), and D2is each independently the group represented by one of the formulae (2A-1) to (2A-6). It should be noted that a plurality of D1are mutually the same or different and a plurality of D2are mutually the same or different. Also preferably, the compound of the exemplary embodiment is the compound represented by one of the formulae (103), (107), (108), (112), (118), and (121), D1is each independently the group represented by one of the formulae (1-1), (1-2), (1-4), (1-5), and (1-6), and D2is the group represented by the formula (2A-1). It should be noted that a plurality of D1are mutually the same or different. The compound of the exemplary embodiment is also preferably the compound represented by the formula (11). The compound of the exemplary embodiment is also preferably the compound represented by the formula (12). The compound in the exemplary embodiment is also preferably the compound represented by the formula (13). In the compound of the exemplary embodiment, R101to R150and R61to R70as the substituent are each independently preferably an unsubstituted aryl group having 6 to 14 ring carbon atoms, an unsubstituted heterocyclic group having 5 to 14 ring atoms, an unsubstituted alkyl group having 1 to 6 carbon atoms, an unsubstituted alkoxy group having 1 to 6 carbon atoms, an unsubstituted aryloxy group having 6 to 14 ring carbon atoms, an unsubstituted arylamino group having 6 to 28 ring carbon atoms, or an unsubstituted alkylamino group 2 to 12 carbon atoms. In the compound of the exemplary embodiment, R11to R16as the substituent are each independently preferably an unsubstituted aryl group having 6 to 14 ring carbon atoms, an unsubstituted heterocyclic group having 5 to 14 ring atoms, an unsubstituted aryloxy group having 6 to 14 ring carbon atoms, or an unsubstituted arylthio group having 6 to 14 ring carbon atoms. R11to R16as the substituent are each independently more preferably an unsubstituted aryl group having 6 to 14 ring carbon atoms or an unsubstituted heterocyclic group having 5 to 14 ring atoms. In the compound of the exemplary embodiment, it is further preferable that R101to R150and R61to R70as the substituent are each an unsubstituted aryl group having 6 to 14 ring carbon atoms, an unsubstituted heterocyclic group having 5 to 14 ring atoms, an unsubstituted alkyl group having 1 to 6 carbon atoms, an unsubstituted alkoxy group having 1 to 6 carbon atoms, an unsubstituted aryloxy group having 6 to 14 ring carbon atoms, or an unsubstituted arylamino group having 6 to 28 ring carbon atoms, and R11to R16as the substituent are each independently an unsubstituted aryl group having 6 to 14 ring carbon atoms or an unsubstituted heterocyclic group having 5 to 14 ring atoms. In the compound of the exemplary embodiment, R101to R150and R61to R70as the substituent are each independently more preferably an unsubstituted aryl group having 6 to 14 ring carbon atoms or an unsubstituted alkyl group 1 to 6 carbon atoms. In the compound of the exemplary embodiment, it is more preferable that Rios to R150and R61to R70as the substituent are each an unsubstituted aryl group having 6 to 14 ring carbon atoms or an unsubstituted alkyl group having 1 to 6 carbon atoms, and R11to R16as the substituent are each independently an unsubstituted aryl group having 6 to 14 ring carbon atoms or an unsubstituted heterocyclic group having 5 to 14 ring atoms. In the compound of the exemplary embodiment, it is more preferable that R161to R168and R171to R260as the substituent may be each independently a halogen atom, an unsubstituted aryl group having 6 to 14 ring carbon atoms, an unsubstituted heterocyclic group having 5 to 14 ring atoms, an unsubstituted alkyl group having 1 to 6 carbon atoms, an unsubstituted alkyl halide group having 1 to 6 carbon atoms, an unsubstituted alkoxy group having 1 to 6 carbon atoms, an unsubstituted alkoxy halide group having 1 to 6 carbon atoms, an unsubstituted aryloxy group having 6 to 14 ring carbon atoms, or an unsubstituted alkylamino group having 2 to 12 carbon atoms. In the compound of the exemplary embodiment, R161to R168and R171to R260as the substituent are each independently preferably a halogen atom, an unsubstituted aryl group having 6 to 14 ring carbon atoms, an unsubstituted heterocyclic group having 5 to 14 ring atoms, an unsubstituted alkyl halide group having 1 to 6 carbon atoms, an unsubstituted alkoxy group having 1 to 6 carbon atoms, an unsubstituted alkoxy halide group having 1 to 6 carbon atoms, an unsubstituted aryloxy group having 6 to 14 ring carbon atoms, or an unsubstituted alkylamino group 2 to 12 carbon atoms. In the compound of the exemplary embodiment, it is preferable that R151and R152as the substituent are each independently an unsubstituted aryl group having 6 to 14 ring carbon atoms or an unsubstituted alkyl group having 1 to 6 carbon atoms. In the compound of the exemplary embodiment, it is preferable that R161to R168and R171to R260as the substituent are each independently a halogen atom, an unsubstituted aryl group having 6 to 14 ring carbon atoms, an unsubstituted heterocyclic group having 5 to 14 ring atoms, an unsubstituted alkyl halide group having 1 to 6 carbon atoms, an unsubstituted alkoxy group having 1 to 6 carbon atoms, an unsubstituted alkoxy halide group having 1 to 6 carbon atoms, an unsubstituted aryloxy group having 6 to 14 ring carbon atoms, or an unsubstituted alkylamino group having 2 to 12 carbon atoms, and R151and R152as the substituent are each independently an unsubstituted aryl group having 6 to 14 ring carbon atoms or an unsubstituted alkyl group having 1 to 6 carbon atoms. In the compound of the exemplary embodiment, it is more preferable that R161to R168, R171to R260, R151and R152as the substituent are each independently an unsubstituted aryl group 6 to 14 ring carbon atoms. In the compound of the exemplary embodiment, it is more preferable that R161to R168and R171to R260as the substituent are each independently an unsubstituted aryl group having 6 to 14 ring carbon atoms, and R151and R152as the substituent are each independently an unsubstituted aryl group having 6 to 14 ring carbon atoms or an unsubstituted alkyl group 1 to 6 carbon atoms. In the compound of the exemplary embodiment, it is also preferable that R101to R150and R61to R70are hydrogen atoms. In the compound of the exemplary embodiment, it is also preferable that R101to R150and R61to R70are hydrogen atoms and R11to R16are each independently an unsubstituted aryl group having 6 to 14 ring carbon atoms or an unsubstituted heterocyclic group having 5 to 14 ring atoms. In the compound of the exemplary embodiment, it is also preferable that R161to R168and R171to R260are hydrogen atoms. In the compound of the exemplary embodiment, when R161to R168and R171to R260are hydrogen atoms, it is preferable that all of the hydrogen atoms are protium, one or more of the hydrogen atoms are deuterium, or all of the hydrogen atoms are deuterium. In the compound of the exemplary embodiment, it is also preferable that R161to R168and R171to R260are hydrogen atoms and R151and R152as a substituent are each independently an unsubstituted aryl group having 6 to 14 ring carbon atoms or an unsubstituted alkyl group having 1 to 6 carbon atoms. In the compound of the exemplary embodiment, it is preferable that, on a basis of a calculation of a sum of atomic weights of atoms forming each of R1to R4,a minimum sum M1(min) among the sums of the groups corresponding to the groups represented by the formulae (1-1) to (1-6) and a maximum sum M2(max) among the sums of the groups corresponding to the groups represented by the formulae (2-1) to (2-10) satisfy a relationship represented by a numerical formula (Numerical Formula 1). Moreover, it is further preferable that the minimum sum M1(min) among the sums and the maximum sum M2(max) among the sums of the groups corresponding to the groups represented by the formulae (2-1) to (2-10) satisfy a relationship represented by a numerical formula (Numerical Formula 1X) below. Moreover, it is particularly preferable that the minimum sum M1(min) among the sums and the maximum sum M2(max) among the sums of the groups corresponding to the groups represented by the formulae (2-1) to (2-10) satisfy a relationship represented by a numerical formula (Numerical Formula 1Y) below. By satisfying the relationship represented by the numerical formula (Numerical Formula 1), (Numerical Formula 1X) or (Numerical Formula 1Y), the TADF properties are kept favorable and the sublimation temperature when the compound is sublimated and purified is easily lowered. M1(min) > M2(max)(Numerical Formula 1)200 > M1(min) − M2(max)(Numerical Formula 1X)170 > M1(min) − M2(max)(Numerical Formula 1Y) A numerical formula (Numerical Formula 1) will be described. The compound in the exemplary embodiment will be described with an exemplary compound represented by the formula (12). In the formula (12), when R1and R3are unsubstituted 11,12-dihydro-11-phenylindolo[2,3-a]carbazolyl groups (C24H15N2), and R2and R4are unsubstituted carbazolyl groups (C12H8N), the compound of the exemplary embodiment is a compound A below. In this case, a sum of atomic weights of atoms forming R1and R3(C24H15N2) (hereinafter, also referred to as a “sum MR1”) is calculated as 12×24+15+14×2=331. Also, a sum of atomic weights of atoms forming R2and R4(C12H8N) (hereinafter, also referred to as a “sum MR2”) is calculated as 12×12+8+14=166. R1and R3each are a group corresponding to the group represented by one of the formulae (1-1) to (1-6). In a comparison between R1and R3in terms of the sum of the atomic weights, the sum MR1=the sum MR3, indicating that the minimum sum M1(min) is equal to the SUM MR1Or MR3. R2and R4each are a group corresponding to the group represented by one of the formulae (2-1) to (2-10). In a comparison between R2and R4in terms of the sum of the atomic weights, the sum MR2=the sum MR4, indicating that the maximum sum M2(max) is equal to the sum MR2or MR4. According, since the compound A satisfies “sum MR1or sum MR3>sum MR2or sum MR4”, the compound A is a compound satisfying the relationship of the numerical formula (Numerical Formula 1). Manufacturing Method of Compound According to Exemplary Embodiment The compound according to the first exemplary embodiment can be prepared through, for instance, a process described later in Examples. The compound of the exemplary embodiment can be manufactured, for instance, by application of known substitution reactions and/or materials depending on a target compound according to reactions described later in Examples. Examples of the compound of the exemplary embodiment include compounds represented by formulae (11-1), (12-1) to (12-2) and (13-1) to (13-2). In the formula (11-1), D1A, D2A, D1B, and D2Brespectively represent groups corresponding to numbers given to columns of D1A, D2A, D1B, and D2Bin Tables 3 to 10. In the formula (12-1), D1A, D2A, D1B, and D2Brespectively represent groups corresponding to numbers given to columns of D1A, D2A, D1B, and D2Bin Tables 3 to 10. In the formula (12-2), D1A, D2A, D1B, and D2Brespectively represent groups corresponding to numbers given to columns of D1A, D2A, D1B, and D2Bin Tables 3 to 10. In the formula (13-1), D1A, D2A, D1B, and D2Brespectively represent groups corresponding to numbers given to columns of D1A, D2A, D1B, and D2Bin Tables 3 to 10. In the formula (13-2), D1A, D2A, D1B, and D2Brespectively represent groups corresponding to numbers given to columns of D1A, D2A, D1B, and D2Bin Tables 3 to 10. In Tables 3 to 11 below, the numbers given to columns of D1A, D2A, D1B, and D2Bcorrespond to numbers of later-described groups 1 to 6 and groups 1′ to 47′. The groups 1 to 6 and groups 1′ to 47′ are shown below. * each independently represents a bonding position to a carbon atom of a benzene ring in each of the formulae (11-1), (12-1) to (12-2) and (13-1) to (13-2) and later-described formulae (11-2), (12-3) to (12-5) and (13-3) to (13-4). Me represents a methyl group. The groups 1 to 6 and groups 1′ to 47′ are shown below. * each independently represents a bonding position to a carbon atom of a benzene ring in each of the formulae (11-1), (12-1) to (12-2) and (13-1) to (13-2) and later-described formulae (11-2), (12-3) to (12-5) and (13-3) to (13-4). Me represents a methyl group. For instance, in Table 3, a compound 1 represents a compound 1a represented by the formula (11-1) in which D1Aand D1Bare groups 1 and D2Aand D2Bare groups 1′, a compound 1 b represented by the formula (12-1) in which D1Aand D1Bare groups 1 and D2Aand D2Bare groups 1′, a compound 1c represented by the formula (12-2) in which D1Aand D1Bare groups 1 and D2Aand D2Bare groups 1′, a compound 1d represented by the formula (13-1) in which D1Aand D1Bare groups 1 and D2Aand D2Bare groups 1′, or a compound 1e represented by the formula (13-2) in which D1Aand D1Bare groups 1 and D2Aand D2Bare groups 1′. In other words, the compound 1 is any one of the compounds 1a to 1e. A relationship between the compound 1 and the compounds 1a to 1e is shown in Table 1 below. Herein, the compounds 1 to 282 are also referred to as a compound X. X is an integer from 1 to 282. Specifically, the compound X represents compounds Xa to Xe. A relationship between the compound X and the compounds Xa to Xe is shown in Table 2 below. TABLE 1FormulaCompound No.TypeNo.D1AD1BD2AD2BCompound 1Compound 1a(11-1)111′1′Compound 1b(12-1)111′1′Compound 1c(12-2)111′1′Compound 1d(13-1)111′1′Compound 1e(13-2)111′1′ TABLE 2Compound No.TypeFormula No.Compound XCompound Xa(11-1)Compound Xb(12-1)Compound Xc(12-2)Compound Xd(13-1)Compound Xe(13-2) TABLE 3Compound No.D1AD1BD2AD2BCompound 1111′1′Compound 2221′1′Compound 3331′1′Compound 4441′1′Compound 5551′1′Compound 6661′1′Compound 7112′2′Compound 8222′2′Compound 9332′2′Compound 10442′2′Compound 11552′2′Compound 12662′2′Compound 13113′3′Compound 14223′3′Compound 15333′3′Compound 16443′3′Compound 17553′3′Compound 18663′3′Compound 19114′4′Compound 20224′4′Compound 21334′4′Compound 22444′4′Compound 23554′4′Compound 24664′4′Compound 25115′5′Compound 26225′5′Compound 27335′5′Compound 28445′5′Compound 29555′5′Compound 30665′5′Compound 31116′6′Compound 32226′6′Compound 33336′6′Compound 34446′6′Compound 35556′6′Compound 36666′6′ TABLE 4Compound No.D1AD1BD2AD2BCompound 37117′7′Compound 38227′7′Compound 39337′7′Compound 40447′7′Compound 41557′7′Compound 42667′7′Compound 43118′8′Compound 44228′8′Compound 45338′8′Compound 46448′8′Compound 47558′8′Compound 48668′8′Compound 49119′9′Compound 50229′9′Compound 51339′9′Compound 52449′9′Compound 53559′9′Compound 54669′9′Compound 551110′10′Compound 562210′10′Compound 573310′10′Compound 584410′10′Compound 595510′10′Compound 606610′10′Compound 611111′11′Compound 622211′11′Compound 633311′11′Compound 644411′11′Compound 655511′11′Compound 666611′11′Compound 671112′12′Compound 682212′12′Compound 693312′12′Compound 704412′12′Compound 715512′12′Compound 726612′12′ TABLE 5Compound No.D1AD1BD2AD2BCompound 731113′13′Compound 742213′13′Compound 753313′13′Compound 764413′13′Compound 775513′13′Compound 786613′13′Compound 791114′14′Compound 802214′14′Compound 813314′14′Compound 824414′14′Compound 835514′14′Compound 846614′14′Compound 851115′15′Compound 862215′15′Compound 873315′15′Compound 884415′15′Compound 895515′15′Compound 906615′15′Compound 911116′16′Compound 922216′16′Compound 933316′16′Compound 944416′16′Compound 955516′16′Compound 966616′16′Compound 971117′17′Compound 982217′17′Compound 993317′17′Compound 1004417′17′Compound 1015517′17′Compound 1026617′17′Compound 1031118′18′Compound 1042218′18′Compound 1053318′18′Compound 1064418′18′Compound 1075518′18′Compound 1086618′18′ TABLE 6Compound No.D1AD1BD2AD2BCompound 1091119′19′Compound 1102219′19′Compound 1113319′19′Compound 1124419′19′Compound 1135519′19′Compound 1146619′19′Compound 1151120′20′Compound 1162220′20′Compound 1173320′20′Compound 1184420′20′Compound 1195520′20′Compound 1206620′20′Compound 1211121′21′Compound 1222221′21′Compound 1233321′21′Compound 1244421′21′Compound 1255521′21′Compound 1266621′21′Compound 1271122′22′Compound 1282222′22′Compound 1293322′22′Compound 1304422′22′Compound 1315522′22′Compound 1326622′22′Compound 1331123′23′Compound 1342223′23′Compound 1353323′23′Compound 1364423′23′Compound 1375523′23′Compound 1386623′23′Compound 1391124′24′Compound 1402224′24′Compound 1413324′24′Compound 1424424′24′Compound 1435524′24′Compound 1446624′24′ TABLE 7Compound No.D1AD1BD2AD2BCompound 1451125′25′Compound 1462225′25′Compound 1473325′25′Compound 1484425′25′Compound 1495525′25′Compound 1506625′25′Compound 1511126′26′Compound 1522226′26′Compound 1533326′26′Compound 1544426′26′Compound 1555526′26′Compound 1566626′26′Compound 1571127′27′Compound 1582227′27′Compound 1593327′27′Compound 1604427′27′Compound 1615527′27′Compound 1626627′27′Compound 1631128′28′Compound 1642228′28′Compound 1653328′28′Compound 1664428′28′Compound 1675528′28′Compound 1686628′28′Compound 1691129′29′Compound 1702229′29′Compound 1713329′29′Compound 1724429′29′Compound 1735529′29′Compound 1746629′29′Compound 1751130′30′Compound 1762230′30′Compound 1773330′30′Compound 1784430′30′Compound 1795530′30′Compound 1806630′30′ TABLE 8Compound No.D1AD1BD2AD2BCompound 1811131′31′Compound 1822231′31′Compound 1833331′31′Compound 1844431′31′Compound 1855531′31′Compound 1866631′31′Compound 1871132′32′Compound 1882232′32′Compound 1893332′32′Compound 1904432′32′Compound 1915532′32′Compound 1926632′32′Compound 1931133′33′Compound 1942233′33′Compound 1953333′33′Compound 1964433′33′Compound 1975533′33′Compound 1986633′33′Compound 1991134′34′Compound 2002234′34′Compound 2013334′34′Compound 2024434′34′Compound 2035534′34′Compound 2046634′34′Compound 2051135′35′Compound 2062235′35′Compound 2073335′35′Compound 2084435′35′Compound 2095535′35′Compound 2106635′35′Compound 2111136′36′Compound 2122236′36′Compound 2133336′36′Compound 2144436′36′Compound 2155536′36′Compound 2166636′36′ TABLE 9Compound No.D1AD1BD2AD2BCompound 2171137′37′Compound 2182237′37′Compound 2193337′37′Compound 2204437′37′Compound 2215537′37′Compound 2226637′37′Compound 2231138′38′Compound 2242238′38′Compound 2253338′38′Compound 2264438′38′Compound 2275538′38′Compound 2286638′38′Compound 2291139′39′Compound 2302239′39′Compound 2313339′39′Compound 2324439′39′Compound 2335539′39′Compound 2346639′39′Compound 2351140′40′Compound 2362240′40′Compound 2373340′40′Compound 2384440′40′Compound 2395540′40′Compound 2406640′40′Compound 2411141′41′Compound 2422241′41′Compound 2433341′41′Compound 2444441′41′Compound 2455541′41′Compound 2466641′41′Compound 2471142′42′Compound 2482242′42′Compound 2493342′42′Compound 2504442′42′Compound 2515542′42′Compound 2526642′42′ TABLE 10Compound No.D1AD1BD2AD2BCompound 2531143′43′Compound 2542243′43′Compound 2553343′43′Compound 2564443′43′Compound 2575543′43′Compound 2586643′43′Compound 2591144′44′Compound 2602244′44′Compound 2613344′44′Compound 2624444′44′Compound 2635544′44′Compound 2646644′44′Compound 2651145′45′Compound 2662245′45′Compound 2673345′45′Compound 2684445′45′Compound 2695545′45′Compound 2706645′45′Compound 2711146′46′Compound 2722246′46′Compound 2733346′46′Compound 2744446′46′Compound 2755546′46′Compound 2766646′46′Compound 2771147′47′Compound 2782247′47′Compound 2793347′47′Compound 2804447′47′Compound 2815547′47′Compound 2826647′47′ Examples of the compound according to the exemplary embodiment include compounds represented by the formulae (11-2), (12-3) to (12-5), and (13-3) to (13-4). In the formula (11-2), D1A, D2A, D2B, and D2Crespectively represent the groups denoted by the numbers shown in Tables 12 to 19. In the formula (12-3), D1A, D2A, D2B, and D2Crespectively represent the groups denoted by the numbers shown in Tables 12 to 19. In the formula (12-4), D1A, D2A, D2B, and D2Crespectively represent the groups denoted by the numbers shown in Tables 12 to 19. In the formula (12-5), D1A, D2A, D2B, and D2Crespectively represent the groups denoted by the numbers shown in Tables 12 to 19. In the formula (13-3), D1A, D2A, D2B, and D2Crespectively represent the groups denoted by the numbers shown in Tables 12 to 19. In the formula (13-4), D1A, D2A, D2B, and D2Crespectively represent the groups denoted by the numbers shown in Tables 12 to 19. In Tables 12 to 19 below, the numbers given to columns of D1A, D2A, D1B, and D2Bcorrespond to numbers of the above-described groups 1 to 6 and groups 1′ to 47′. For instance, in Table 12, a compound 283 represents a compound 283a represented by the formula (11-2) in which D1Ais a group 1 and D2A, D2Band D2Care groups 1′, a compound 283b represented by the formula (12-3) in which D1Ais a group 1 and D2A, D2Band D2Care groups 1′, a compound 283c represented by the formula (12-4) in which D1Ais a group 1 and D2A, D2Band D2Care groups 1′, a compound 283d represented by the formula (12-5) in which D1Ais a group 1 and D2A, D2Band D2Care groups 1′, a compound 283e represented by the formula (13-3) in which D1Ais a group 1 and D2A, D2Band D2Care groups 1′, or a compound 283f represented by the formula (13-4) in which D1Ais a group 1 and D2A, D2Band D2Care groups 1′. In other words, the compound 283 is any one of the compounds 283a to 283f. Herein, the compound 283 to the compound 564 are also referred to as a compound Y. Y is an integer from 283 to 564. Specifically, the compound Y represents a compound Ya, Yb, Yc, Yd, Ye or Yf. A relationship between the compound Y and the compounds Ya to Yf is shown in Table 11 below. TABLE 11Compound No.TypeFormula No.Compound YCompound Ya(11-2)Compound Yb(12-3)Compound Yc(12-4)Compound Yd(12-5)Compound Ye(13-3)Compound Yf(13-4) TABLE 12Compound No.D1AD2AD2BD2CCompound 28311′1′1′Compound 28421′1′1′Compound 28531′1′1′Compound 28641′1′1′Compound 28751′1′1′Compound 28861′1′1′Compound 28912′2′2′Compound 29022′2′2′Compound 29132′2′2′Compound 29242′2′2′Compound 29352′2′2′Compound 29462′2′2′Compound 29513′3′3′Compound 29623′3′3′Compound 29733′3′3′Compound 29843′3′3′Compound 29953′3′3′Compound 30063′3′3′Compound 30114′4′4′Compound 30224′4′4′Compound 30334′4′4′Compound 30444′4′4′Compound 30554′4′4′Compound 30664′4′4′Compound 30715′5′5′Compound 30825′5′5′Compound 30935′5′5′Compound 31045′5′5′Compound 31155′5′5′Compound 31265′5′5′Compound 31316′6′6′Compound 31426′6′6′Compound 31536′6′6′Compound 31646′6′6′Compound 31756′6′6′Compound 31866′6′6′ TABLE 13Compound No.D1AD2AD2BD2CCompound 31917′7′7′Compound 32027′7′7′Compound 32137′7′7′Compound 32247′7′7′Compound 32357′7′7′Compound 32467′7′7′Compound 32518′8′8′Compound 32628′8′8′Compound 32738′8′8′Compound 32848′8′8′Compound 32958′8′8′Compound 33068′8′8′Compound 33119′9′9′Compound 33229′9′9′Compound 33339′9′9′Compound 33449′9′9′Compound 33559′9′9′Compound 33669′9′9′Compound 337110′10′10′Compound 338210′10′10′Compound 339310′10′10′Compound 340410′10′10′Compound 341510′10′10′Compound 342610′10′10′Compound 343111′11′11′Compound 344211′11′11′Compound 345311′11′11′Compound 346411′11′11′Compound 347511′11′11′Compound 348611′11′11′Compound 349112′12′12′Compound 350212′12′12′Compound 351312′12′12′Compound 352412′12′12′Compound 353512′12′12′Compound 354612′12′12′ TABLE 14Compound No.D1AD2AD2BD2CCompound 355113′13′13′Compound 356213′13′13′Compound 357313′13′13′Compound 358413′13′13′Compound 359513′13′13′Compound 360613′13′13′Compound 361114′14′14′Compound 362214′14′14′Compound 363314′14′14′Compound 364414′14′14′Compound 365514′14′14′Compound 366614′14′14′Compound 367115′15′15′Compound 368215′15′15′Compound 369315′15′15′Compound 370415′15′15′Compound 371515′15′15′Compound 372615′15′15′Compound 373116′16′16′Compound 374216′16′16′Compound 375316′16′16′Compound 376416′16′16′Compound 377516′16′16′Compound 378616′16′16′Compound 379117′17′17′Compound 380217′17′17′Compound 381317′17′17′Compound 382417′17′17′Compound 383517′17′17′Compound 384617′17′17′Compound 385118′18′18′Compound 386218′18′18′Compound 387318′18′18′Compound 388418′18′18′Compound 389518′18′18′Compound 390618′18′18′ TABLE 15Compound No.D1AD2AD2BD2CCompound 391119′19′19′Compound 392219′19′19′Compound 393319′19′19′Compound 394419′19′19′Compound 395519′19′19′Compound 396619′19′19′Compound 397120′20′20′Compound 398220′20′20′Compound 399320′20′20′Compound 400420′20′20′Compound 401520′20′20′Compound 402620′20′20′Compound 403121′21′21′Compound 404221′21′21′Compound 405321′21′21′Compound 406421′21′21′Compound 407521′21′21′Compound 408621′21′21′Compound 409122′22′22′Compound 410222′22′22′Compound 411322′22′22′Compound 412422′22′22′Compound 413522′22′22′Compound 414622′22′22′Compound 415123′23′23′Compound 416223′23′23′Compound 417323′23′23′Compound 418423′23′23′Compound 419523′23′23′Compound 420623′23′23′Compound 421124′24′24′Compound 422224′24′24′Compound 423324′24′24′Compound 424424′24′24′Compound 425524′24′24′Compound 426624′24′24′ TABLE 16Compound No.D1AD2AD2BD2CCompound 427125′25′25′Compound 428225′25′25′Compound 429325′25′25′Compound 430425′25′25′Compound 431525′25′25′Compound 432625′25′25′Compound 433126′26′26′Compound 434226′26′26′Compound 435326′26′26′Compound 436426′26′26′Compound 437526′26′26′Compound 438626′26′26′Compound 439127′27′27′Compound 440227′27′27′Compound 441327′27′27′Compound 442427′27′27′Compound 443527′27′27′Compound 444627′27′27′Compound 445128′28′28′Compound 446228′28′28′Compound 447328′28′28′Compound 448428′28′28′Compound 449528′28′28′Compound 450628′28′28′Compound 451129′29′29′Compound 452229′29′29′Compound 453329′29′29′Compound 454429′29′29′Compound 455529′29′29′Compound 456629′29′29′Compound 457130′30′30′Compound 458230′30′30′Compound 459330′30′30′Compound 460430′30′30′Compound 461530′30′30′Compound 462630′30′30′ TABLE 17Compound No.D1AD2AD2BD2CCompound 463131′31′31′Compound 464231′31′31′Compound 465331′31′31′Compound 466431′31′31′Compound 467531′31′31′Compound 468631′31′31′Compound 469132′32′32′Compound 470232′32′32′Compound 471332′32′32′Compound 472432′32′32′Compound 473532′32′32′Compound 474632′32′32′Compound 475133′33′33′Compound 476233′33′33′Compound 477333′33′33′Compound 478433′33′33′Compound 479533′33′33′Compound 480633′33′33′Compound 481134′34′34′Compound 482234′34′34′Compound 483334′34′34′Compound 484434′34′34′Compound 485534′34′34′Compound 486634′34′34′Compound 487135′35′35′Compound 488235′35′35′Compound 489335′35′35′Compound 490435′35′35′Compound 491535′35′35′Compound 492635′35′35′Compound 493136′36′36′Compound 494236′36′36′Compound 495336′36′36′Compound 496436′36′36′Compound 497536′36′36′Compound 498636′36′36′ TABLE 18Compound No.D1AD2AD2BD2CCompound 499137′37′37′Compound 500237′37′37′Compound 501337′37′37′Compound 502437′37′37′Compound 503537′37′37′Compound 504637′37′37′Compound 505138′38′38′Compound 506238′38′38′Compound 507338′38′38′Compound 508438′38′38′Compound 509538′38′38′Compound 510638′38′38′Compound 511139′39′39′Compound 512239′39′39′Compound 513339′39′39′Compound 514439′39′39′Compound 515539′39′39′Compound 516639′39′39′Compound 517140′40′40′Compound 518240′40′40′Compound 519340′40′40′Compound 520440′40′40′Compound 521540′40′40′Compound 522640′40′40′Compound 523141′41′41′Compound 524241′41′41′Compound 525341′41′41′Compound 526441′41′41′Compound 527541′41′41′Compound 528641′41′41′Compound 529142′42′42′Compound 530242′42′42′Compound 531342′42′42′Compound 532442′42′42′Compound 533542′42′42′Compound 534642′42′42′ TABLE 19Compound No.D1AD2AD2BD2CCompound 535143′43′43′Compound 536243′43′43′Compound 537343′43′43′Compound 538443′43′43′Compound 539543′43′43′Compound 540643′43′43′Compound 541144′44′44′Compound 542244′44′44′Compound 543344′44′44′Compound 544444′44′44′Compound 545544′44′44′Compound 546644′44′44′Compound 547145′45′45′Compound 548245′45′45′Compound 549345′45′45′Compound 550445′45′45′Compound 551545′45′45′Compound 552645′45′45′Compound 553146′46′46′Compound 554246′46′46′Compound 555346′46′46′Compound 556446′46′46′Compound 557546′46′46′Compound 558646′46′46′Compound 559147′47′47′Compound 560247′47′47′Compound 561347′47′47′Compound 562447′47′47′Compound 563547′47′47′Compound 564647′47′47′ Examples of the compound of the exemplary embodiment are shown below. The compound of the invention is by no means limited to the Examples. Second Exemplary Embodiment Organic-EL-Device Material An organic-EL-device material according to a second exemplary embodiment contains the compound according to the first exemplary embodiment (at least one of the compounds represented by the formulae (11) to (13).) According to the second exemplary embodiment, the organic-EL-device material capable of decreasing a sublimation temperature when being sublimated and purified while maintaining TADF properties can be obtained. The organic-EL-device material according to the second exemplary embodiment may further contain a compound other than the compound according to the first exemplary embodiment. When organic-EL-device material according to the second exemplary embodiment contains the compound other than the compound according to the first exemplary embodiment, the compound in the second exemplary embodiment may be solid or liquid. Third Exemplary Embodiment Organic EL Device An arrangement of an organic EL device according to a third exemplary embodiment will be described below. The organic EL device includes an anode, a cathode, and an at least one organic layer between the anode and the cathode. The organic layer typically includes a plurality of layers formed of an organic compound(s). The organic layer may further include an inorganic compound. The organic EL device according to the exemplary embodiment includes a first organic layer between the anode and the cathode. The first organic layer contains at least one of the compounds represented by the formulae (11) to (13). The first organic layer is, for instance, at least one layer selected from the group consisting of a hole injecting layer, a hole transporting layer, an emitting layer, an electron injecting layer, an electron transporting layer, a hole blocking layer and an electron blocking layer. The first organic layer is preferably the emitting layer. In the organic EL device of the exemplary embodiment, the first organic layer is the emitting layer. In the exemplary embodiment, the organic layer may consist of the emitting layer as the first organic layer. Alternatively, the organic layer may further include, for instance, at least one layer selected from the group consisting of the hole injecting layer, the hole transporting layer, the electron injecting layer, the electron transporting layer, the hole blocking layer, and the electron blocking layer. FIG.1schematically shows an exemplary structure of the organic EL device of the exemplary embodiment. The organic EL device1includes a light-transmissive substrate2, an anode3, a cathode4, and an organic layer10provided between the anode3and the cathode4. The organic layer10includes a hole injecting layer6, a hole transporting layer7, an emitting layer5(the first organic layer), an electron transporting layer8, and an electron injecting layer9, which are sequentially layered on the anode3. In the organic EL device1according to the exemplary embodiment, the emitting layer5contains the first compound. The first compound is the compound according to the first exemplary embodiment (at least one of the compounds represented by the formulae (11) to (13)). It is preferable that the emitting layer5does not contain a phosphorescent material (dopant material). It is preferable that the emitting layer5does not contain a heavy metal complex and a phosphorescent rare-metal complex. Examples of the heavy metal complex herein include iridium complex, osmium complex, and platinum complex. It is also preferable that the emitting layer5does not contain a metal complex. In the organic EL device1according to the exemplary embodiment, the emitting layer5contains the first compound and further a second compound. In this embodiment, the first compound is preferably a host material (sometimes referred to as a matrix material hereinafter), and the second compound is preferably a dopant material (sometimes referred to as a guest material, an emitter, or a luminescent material hereinafter). First Compound The first compound is according to the first exemplary embodiment. The first compound is preferably a delayed fluorescent compound. Delayed Fluorescence Delayed fluorescence is explained in “Yuki Hando-tai no Debaisu Bussei (Device Physics of Organic Semiconductors)” (edited by ADACHI, Chihaya, published by Kodansha, on pages 261-268). This document describes that, if an energy gap ΔE13of a fluorescent material between a singlet state and a triplet state is reducible, a reverse energy transfer from the triplet state to the singlet state, which usually occurs at a low transition probability, would occur at a high efficiency to express thermally activated delayed fluorescence (TADF). Further, a mechanism of generating delayed fluorescence is explained in FIG. 10.38 in the document. The first compound in the exemplary embodiment is preferably a compound exhibiting thermally activated delayed fluorescence generated by such a mechanism. In general, emission of delayed fluorescence can be confirmed by measuring the transient PL (Photo Luminescence). The behavior of delayed fluorescence can also be analyzed based on the decay curve obtained from the transient PL measurement. The transient PL measurement is a method of irradiating a sample with a pulse laser to excite the sample, and measuring the decay behavior (transient characteristics) of PL emission after the irradiation is stopped. PL emission in TADF materials is classified into a light emission component from a singlet exciton generated by the first PL excitation and a light emission component from a singlet exciton generated via a triplet exciton. The lifetime of the singlet exciton generated by the first PL excitation is on the order of nanoseconds and is very short. Therefore, light emission from the singlet exciton rapidly attenuates after irradiation with the pulse laser. On the other hand, the delayed fluorescence is gradually attenuated due to light emission from a singlet exciton generated via a triplet exciton having a long lifetime. As described above, there is a large temporal difference between the light emission from the singlet exciton generated by the first PL excitation and the light emission from the singlet exciton generated via the triplet exciton. Therefore, the luminous intensity derived from delayed fluorescence can be determined. FIG.2shows a schematic diagram of an exemplary device for measuring the transient PL. An example of a method of measuring a transient PL usingFIG.2and an example of behavior analysis of delayed fluorescence will be described. A transient PL measuring device100inFIG.2includes: a pulse laser101capable of radiating a light having a predetermined wavelength; a sample chamber102configured to house a measurement sample; a spectrometer103configured to divide a light radiated from the measurement sample; a streak camera104configured to provide a two-dimensional image; and a personal computer105configured to import and analyze the two-dimensional image. A device for measuring the transient PL is not limited to the device described in the exemplary embodiment. The sample to be housed in the sample chamber102is obtained by doping a matrix material with a doping material at a concentration of 12 mass % and forming a thin film on a quartz substrate. The thin film sample housed in the sample chamber102is radiated with a pulse laser from the pulse laser101to excite the doping material. Emission is extracted in a direction of 90 degrees with respect to a radiation direction of the excited light. The extracted emission is divided by the spectrometer103to form a two-dimensional image in the streak camera104. As a result, the two-dimensional image is obtainable in which the ordinate axis represents a time, the abscissa axis represents a wavelength, and a bright spot represents a luminous intensity. When this two-dimensional image is taken out at a predetermined time axis, an emission spectrum in which the ordinate axis represents the luminous intensity and the abscissa axis represents the wavelength is obtainable. Moreover, when this two-dimensional image is taken out at the wavelength axis, a decay curve (transient PL) in which the ordinate axis represents a logarithm of the luminous intensity and the abscissa axis represents the time is obtainable. For instance, a thin film sample A was manufactured as described above from a reference compound H1 as the matrix material and a reference compound D1 as the doping material and was measured in terms of the transient PL. The decay curve was analyzed with respect to the above thin film sample A and a thin film sample B. The thin film sample B was manufactured in the same manner as described above from a reference compound H2 as the matrix material and the reference compound D1 as the doping material. FIG.3shows decay curves obtained from transient PL obtained by measuring the thin film samples A and B. As described above, an emission decay curve in which the ordinate axis represents the luminous intensity and the abscissa axis represents the time can be obtained by the transient PL measurement. Based on the emission decay curve, a fluorescence intensity ratio between fluorescence emitted from a singlet state generated by photo-excitation and delayed fluorescence emitted from a singlet state generated by inverse energy transfer via a triplet state can be estimated. In a delayed fluorescent material, a ratio of the intensity of the slowly decaying delayed fluorescence to the intensity of the promptly decaying fluorescence is relatively large. Specifically, Prompt emission and Delay emission are present as emission from the delayed fluorescent material. Prompt emission is observed promptly when the excited state is achieved by exciting the compound of the exemplary embodiment with a pulse beam (i.e., a beam emitted from a pulse laser) having a wavelength absorbable by the delayed fluorescent material. Delay emission is observed not promptly when the excited state is achieved but after the excited state is achieved. An amount of Prompt emission, an amount of Delay emission and a ratio between the amounts thereof can be obtained according to the method as described in “Nature 492, 234-238, 2012” (Reference Document 1). The amount of Prompt emission and the amount of Delay emission may be calculated using a device different from one described in Reference Document 1 or one shown inFIG.2. In the exemplary embodiment, a sample manufactured by a method shown below is used for measuring delayed fluorescence of the first compound. For instance, the first compound is dissolved in toluene to prepare a dilute solution with an absorbance of 0.05 or less at the excitation wavelength to eliminate the contribution of self-absorption. In order to prevent quenching due to oxygen, the sample solution is frozen and degassed and then sealed in a cell with a lid under an argon atmosphere to obtain an oxygen-free sample solution saturated with argon. The fluorescence spectrum of the sample solution is measured with a spectrofluorometer FP-8600 (manufactured by JASCO Corporation), and the fluorescence spectrum of a 9,10-diphenylanthracene ethanol solution is measured under the same conditions. Using the fluorescence area intensities of both spectra, the total fluorescence quantum yield is calculated by an equation (1) in Morris et al. J. Phys. Chem. 80 (1976) 969. An amount of Prompt emission, an amount of Delay emission and a ratio between the amounts thereof can be obtained according to the method as described in “Nature 492, 234-238, 2012” (Reference Document 1). The amount of Prompt emission and the amount of Delay emission may be calculated using a device different from one described in Reference Document 1 or one shown inFIG.2. In the exemplary embodiment, a measurement target compound (the first compound) preferably has a value of XD/XPis 0.05 or more, provided that the amount of Prompt emission is denoted by XPand the amount of Delay emission is denoted by XD. Amounts of Prompt emission and Delay emission and a ratio of the amounts thereof in compounds other than the first compound herein are measured in the same manner as those of the first compound. Second Compound The second compound is preferably a fluorescent compound. The second compound may be a thermally activated delayed fluorescent compound or a compound exhibiting no thermally activated delayed fluorescence. A fluorescent material is usable as the second compound in the exemplary embodiment. Specific examples of the fluorescent material include a bisarylaminonaphthalene derivative, aryl-substituted naphthalene derivative, bisarylaminoanthracene derivative, aryl-substituted anthracene derivative, bisarylaminopyrene derivative, aryl-substituted pyrene derivative, and bisarylamino Chrysene derivative, aryl-substituted chrysene derivative, bisarylaminofluoranthene derivative, aryl-substituted fluoranthene derivative, indenoperylene derivative, acenaphthofluoranthene derivative, pyromethene boron complex compound, compound having a pyromethene skeleton, metal complex of the compound having a pyrromethene skeleton, diketopyrrolopyrrole derivative, perylene derivative, and naphthacene derivative. The second compound in the exemplary embodiment is also preferably represented by a formula (20) below. The second compound is represented by the formula (20) below. The second compound is preferably a fluorescent compound. In the formula (20), In the formula (20), X is a nitrogen atom, or a carbon atom bonded to Y. Y is a hydrogen atom or a substituent; R21to R26are each independently a hydrogen atom or a substituent, or at least one of a pair of R21and R22, a pair of R22and R23, a pair of R24and R25, or a pair of R25and R26are mutually bonded to form a ring. Y and R21to R26each being the substituent are each independently selected from the group consisting of a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkyl halide group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 ring carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy halide group having 1 to 30 carbon atoms, a substituted or unsubstituted alkylthio group having 1 to 30 carbon atoms, a substituted or unsubstituted aryloxy group having 6 to 30 ring carbon atoms, a substituted or unsubstituted arylthio group having 6 to 30 ring carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 30 carbon atoms, a substituted or unsubstituted aralkyl group having 7 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, a halogen atom, a carboxy group, a substituted or unsubstituted ester group, a substituted or unsubstituted carbamoyl group, a substituted or unsubstituted amino group, a nitro group, a cyano group, a substituted or unsubstituted silyl group, and a substituted or unsubstituted siloxanyl group. Z21and Z22are each independently a substituent, or are mutually bonded to form a ring, Z21and Z22as the substituent are each independently selected from the group consisting of a halogen atom, a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkyl halide group having 1 to 30 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy halide group having 1 to 30 carbon atoms, and a substituted or unsubstituted aryloxy group having 6 to 30 ring carbon atoms. For instance, when a pair of R25and R26in the formula (20) is mutually bonded to form a ring, the second compound is represented by a formula (21) below. In the formula (21), X, Y, R21to R24, Z21and Z22respectively represent the same as X, Y, R21to R24, Z21and Z22in the formula (20). R27to Rao each independently represent a hydrogen atom or a substituent. When R27to Rao are each independently the substituent, the substituent represents the same as the substituents for R21to R24. When a pair of R21 and R22 in the formula (20) is mutually bonded to form a ring, the second compound is represented by a formula (20A) or (20B) below. However, a structure of the second compound is not limited to structures below. In the formula (20A), X, Y and R21to R26respectively represent the same as X, Y and R21to R26in the formula (20). R1Aeach independently represent a hydrogen atom or a substituent. When R1Ais the substituent, the substituent represents the same as the substituents for R21to R26. n3 is 4. In the formula (20B), X, Y and R21to R26respectively represent the same as X, Y and R21to R26in the formula (20). R1Beach independently represent a hydrogen atom or a substituent. When RIB is the substituent, the substituent represents the same as the substituents for R21to R26. n4 is 4. It is preferable that at least one of Z21or Z22(preferably both of Z21and Z22) is a group selected from the group consisting of a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, substituted or unsubstituted alkyl halide group having 1 to 30 carbon atoms, substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms, substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, substituted or unsubstituted alkoxy halide group having 1 to 30 carbon atoms, and substituted or unsubstituted aryloxy group having 6 to 30 ring carbon atoms. It is more preferable that at least one of Z21or Z22is a group selected from the group consisting of a fluorine-substituted alkoxy group having 1 to 30 carbon atoms, a fluorine-substituted aryloxy group having 6 to 30 ring carbon atoms, and an aryloxy group having 6 to 30 ring carbon atoms and substituted with a fluoroalkyl group having 1 to 30 carbon atoms. Further preferably, at least one of Z21or Z22is a fluorine-substituted alkoxy group having 1 to 30 carbon atoms. Furthermore preferably, both of Z21and Z22are a fluorine-substituted alkoxy group having 1 to 30 carbon atoms. It is also preferable that both of Z21and Z22are the same to each other. Meanwhile, it is also preferable that at least one of Z21or Z22is a fluorine atom. It is also more preferable that both of Z21and Z22are fluorine atoms. It is also preferable that at least one of Z21or Z22is a group represented by a formula (20a). In the formula (20a): A represents a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, substituted or unsubstituted alkyl halide group having 1 to 6 carbon atoms, or substituted or unsubstituted aryl group having 6 to 12 ring carbon atoms; L2represents a substituted or unsubstituted alkylene group having 1 to 6 carbon atoms, or substituted or unsubstituted arylene group having 6 to 12 ring carbon atoms; and m is 0, 1, 2, 3, 4, 5, 6 or 7. When m is 2, 3, 4, 5, 6 or 7, a plurality of L2are mutually the same or different. m is preferably 0, 1 or 2. When m is O, A is directly bonded to O (oxygen atom). When Z21and Z22of the formula (20) are each the group represented by the formula (20a), the second compound is represented by a formula (22). The second compound is also preferably represented by the formula (22). In the formula (22), X, Y bonded to a carbon atom as X, and R21to R26represent the same as X, Y and R21to R26in the formulae (20). A21 and A22 represent the same as A in the formula (20a) and may be mutually the same or different. L21and L22represent the same as L2in the formula (20a) and may be mutually the same or different. m1 and m2 are each independently 0, 1, 2, 3, 4, 5, 6 or 7, preferably 0, 1 or 2. When m1 is 2, 3, 4, 5, 6 or 7, a plurality of L21are mutually the same or different. When m2 is 2, 3, 4, 5, 6 or 7, a plurality of L22are mutually the same or different. When m1 is 0, A21is directly bonded to O (oxygen atom). When m2 is 0, A22is directly bonded to O (oxygen atom). At least one of A or L2in the formula (20a) is preferably substituted with a halogen atom, more preferably substituted with a fluorine atom. A in the formula (20a) is more preferably a perfluoroalkyl group having 1 to 6 carbon atoms or a perfluoroaryl group having 6 to 12 carbon atoms, further preferably a perfluoroalkyl group having 1 to 6 carbon atoms. L2in the formula (20a) is more preferably a perfluoroalkylene group having 1 to 6 carbon atoms or a perfluoroarylene group having 6 to 12 carbon atoms, further preferably a perfluoroalkylene group having 1 to 6 carbon atoms. Specifically, it is also preferable that the second compound is a compound represented by a formula (22a). In the formula (22a): X represents the same as X in the formula (20). Y bonded to a carbon atom as X represents the same as Y in the formula (20). R21to R26each independently represent the same as R21to R26in the formula (20). m3 is in a range from 0 to 4. m4 is in a range from 0 to 4. m3 and m4 are mutually the same or different. In the formulae (20), (21), (22) and (22a), X is a carbon atom bonded to Y; Y is a hydrogen atom or a substituent; Y as the substituent is preferably a substituent selected from the group consisting of a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, substituted or unsubstituted alkyl halide group having 1 to 30 carbon atoms and substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms, more preferably a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms. In the formulae (20), (21), (22) and (22a), it is more preferable that X is a carbon atom bonded to Y; Y is a hydrogen atom or a substituent; Y as the substituent is a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms; when Y as the substituent is an aryl group having 6 to 30 ring carbon atoms having a substituent, the substituent is a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkyl halide group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy halide group having 1 to 30 carbon atoms, or an aryl group having 6 to 30 ring carbon atoms and substituted by an alkyl group having 1 to 30 carbon atoms. In the second compound, Z21and Z22may be mutually bonded to form a ring. However, it is preferable that Z21and Z22are not mutually bonded. In the formulae (20), (22) and (22a), at least one of R21, R23, R24or R26is preferably a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms or a substituted or unsubstituted alkyl halide group having 1 to 30 carbon atoms. In the formulae (20), (22) and (22a), R21, R23, R24and R26are more preferably each a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms or a substituted or unsubstituted alkyl halide group having 1 to 30 carbon atoms. In this case, R22and R25are preferably hydrogen atoms. In the formulae (20), (22) and (22a), at least one of R21, R23, R24or R26is preferably a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms. In the formulae (20), (22) and (22a), R21, R23, R24and R26are more preferably each a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms. In this case, R22and R25are preferably hydrogen atoms. In the formulae (20), (22) and (22a), it is more preferable that R21, R23, R24and R26are each independently a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms (preferably 1 to 6 carbon atoms), a substituted or unsubstituted alkyl halide group having 1 to 30 carbon atoms (preferably 1 to 6 carbon atoms), or an aryl group having 6 to 30 ring carbon atoms (preferably 6 to 12 ring carbon atoms) and substituted with an alkyl group having 1 to 30 carbon atoms; and R22and R25are hydrogen atoms. In the formula (21), at least one of R21, R23or R24is preferably a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms or a substituted or unsubstituted alkyl halide group having 1 to 30 carbon atoms. In the formula (21), R21, R23and R24are more preferably a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms or a substituted or unsubstituted alkyl halide group having 1 to 30 carbon atoms. In this case, R22is preferably a hydrogen atom. In the formula (21), at least one of R21, R23or R24is preferably a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms. In the formula (21), R21, R23and R24are more preferably a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms. In this case, R22is preferably a hydrogen atom. In the formula (21): it is more preferable that R21, R23, and R24are each independently a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms (preferably 1 to 6 carbon atoms), a substituted or unsubstituted alkyl halide group having 1 to 30 carbon atoms (preferably 1 to 6 carbon atoms), or an aryl group having 6 to 30 ring carbon atoms (preferably 6 to 12 ring carbon atoms) and substituted with an alkyl group having 1 to 30 carbon atoms; and R22is a hydrogen atom. In the second compound, examples of the fluorine-substituted alkoxy group include 2,2,2-trifluoroethoxy group, 2,2-difluoroethoxy group, 2,2,3,3,3-pentafluoro-1-propoxy group, 2,2,3,3-tetrafluoro-1-propoxy group, 1,1,1,3,3,3-hexafluoro-2-propoxy group, 2,2,3,3,4,4,4-heptafluoro-1-butyloxy group, 2,2,3,3,4,4-hexafluoro-1-butyloxy group, nonafluoro-tertiary-butyloxy group, 2,2,3,3,4,4,5,5,5-nonafluoropentanoxy group, 2,2,3,3,4,4,5,5,6,6,6-undecafluorohexanoxy group, 2,3 bis(trifluoromethyl)-2,3-butanedioxy group, 1,1,2,2-tetra(trifluoromethyl)ethylene glycoxy group, 4,4,5,5,6,6,6-heptafluorohexane-1,2-dioxy group, and 4,4,5,5,6,6,7,7,8,8,9,9,9-tridecafluorononane-1,2-dioxy group. In the second compound, examples of the fluorine-substituted aryloxy group or the aryloxy group substituted with a fluoroalkyl group include a pentafluorophenoxy group, 3,4,5-trifluorophenoxy group, 4-trifluoromethylphenoxy group, 3,5-bistrifluoromethylphenoxy group, 3-fluoro-4-trifluoromethylphenoxy group, 2,3,5,6-tetrafluoro-4-trifluoromethylphenoxy group, 4-fluorocatecholato group, 4-trifluoromethylcatecholato group, and 3,5-bistrifluoromethylcatecholato group. When the second compound is a fluorescent compound, the second compound preferably emits light having a main peak wavelength in a range from 400 nm to 700 nm. Herein, the main peak wavelength means a peak wavelength of an emission spectrum exhibiting a maximum luminous intensity among fluorescence spectra measured in a toluene solution in which a measurement target compound is dissolved at a concentration ranging from 10−6mol/I to 10−5mol/I. A spectrophotofluorometer (F-7000 manufactured by Hitachi High-Tech Science Corporation) is used as a measurement device. The second compound preferably exhibits red or green light emission. Herein, the red light emissions refers to a light emission in which a main peak wavelength of fluorescence spectrum is in a range from 600 nm to 660 nm. When the second compound is a red fluorescent compound, the main peak wavelength of the second compound is preferably in a range from 600 nm to 660 nm, more preferably in a range from 600 nm to 640 nm, further preferably in a range from 610 nm to 630 nm. Herein, the green light emissions refers to a light emission in which a main peak wavelength of fluorescence spectrum is in a range from 500 nm to 560 nm. When the second compound is a green fluorescent compound, the main peak wavelength of the second compound is preferably in a range from 500 nm to 560 nm, more preferably in a range from 500 nm to 540 nm, further preferably in a range from 510 nm to 530 nm. Herein, the blue light emissions refers to a light emission in which a main peak wavelength of fluorescence spectrum is in a range from 430 nm to 480 nm. When the second compound is a blue fluorescent compound, the main peak wavelength of the second compound is preferably in a range from 430 nm to 480 nm, more preferably in a range from 445 nm to 480 nm. Manufacturing Method of Second Compound The second compound can be manufactured by a known method. Examples of the second compound according to the exemplary embodiment are shown below. The second compound of the invention is by no means limited to the Examples. A coordinate bond between a boron atom and a nitrogen atom in a pyrromethene skeleton is shown by various means such as a solid line, a broken line, an arrow, and omission. Herein, the coordinate bond is shown by a solid line or a broken line, or the description of the coordinate bond is omitted. Relationship Between First Compound and Second Compound in Emitting Layer In the organic EL device1of the exemplary embodiment, a singlet energy S1(Mat1) of the first compound and a singlet energy S1(Mat2) of the second compound preferably satisfy a relationship of a numerical formula (Numerical Formula 3). S1(Mat1)>S1(Mat2) (Numerical Formula 3) An energy gap T77K(Mat1) at 77 [K] of the first compound is preferably larger than an energy gap T77K(Mat2) at 77 [K] of the second compound. In other words, a relationship of the following numerical formula (Numerical Formula 5) is preferably satisfied. T77K(Mat1)>T77K(Mat2) (Numerical Formula 5) When the organic EL device1of the exemplary embodiment emits light, it is preferable that the second compound in the emitting layer5mainly emits light. Relationship Between Triplet Energy and Energy Gap at 77K Here, a relationship between a triplet energy and an energy gap at 77K will be described. In the exemplary embodiment, the energy gap at 77 [K] is different from a typical triplet energy in some aspects. Triplet energy is measured as follows. Firstly, a solution in which a compound (measurement target) is dissolved in an appropriate solvent is encapsulated in a quartz glass tube to prepare a sample. A phosphorescent spectrum (ordinate axis: phosphorescent luminous intensity, abscissa axis: wavelength) of the sample is measured at a low temperature (77K). A tangent is drawn to the rise of the phosphorescent spectrum close to the short-wavelength region. The triplet energy is calculated by a predetermined conversion equation based on a wavelength value at an intersection of the tangent and the abscissa axis. Here, the thermally activated delayed fluorescent compound among the compounds of the exemplary embodiment is preferably a compound having a small ΔST. When ΔST is small, intersystem crossing and inverse intersystem crossing are likely to occur even at a low temperature (77K), so that the singlet state and the triplet state coexist. As a result, the spectrum to be measured in the same manner as the above includes emission from both the singlet state and the triplet state. Although it is difficult to distinguish the emission from the singlet state from the emission from the triplet state, the value of the triplet energy is basically considered dominant. Accordingly, in the exemplary embodiment, the triplet energy is measured by the same method as a typical triplet energy T, but a value measured in the following manner is referred to as an energy gap T77Kin order to differentiate the measured energy from the typical triplet energy in a strict meaning. The measurement target compound is dissolved in EPA (diethylether:isopentane:ethanol=5:5:2 in volume ratio) at a concentration of 10 μmol/L, and the obtained solution is encapsulated in a quartz cell to provide a measurement sample. A phosphorescent spectrum (ordinate axis: phosphorescent luminous intensity, abscissa axis: wavelength) of the sample is measured at a low temperature (77K). A tangent is drawn to the rise of the phosphorescent spectrum close to the short-wavelength region. An energy amount is calculated by a conversion equation below based on a wavelength value fledge nm at an intersection of the tangent and the abscissa axis and is defined as an energy gap T77Kat 77K. T77K[eV]=1239.85/λedge Conversion Equation (F1): The tangent to the rise of the phosphorescence spectrum close to the short-wavelength region is drawn as follows. While moving on a curve of the phosphorescence spectrum from the short-wavelength region to the maximum spectral value closest to the short-wavelength region among the maximum spectral values, a tangent is checked at each point on the curve toward the long-wavelength of the phosphorescence spectrum. An inclination of the tangent is increased along the rise of the curve (i.e., a value of the ordinate axis is increased). A tangent drawn at a point of the maximum inclination (i.e., a tangent at an inflection point) is defined as the tangent to the rise of the phosphorescence spectrum close to the short-wavelength region. The maximum with peak intensity being 15% or less of the maximum peak intensity of the spectrum is not included in the above-mentioned maximum closest to the short-wavelength region. The tangent drawn at a point of the maximum spectral value being closest to the short-wavelength region and having the maximum inclination is defined as a tangent to the rise of the phosphorescence spectrum close to the short-wavelength region. For phosphorescence measurement, a spectrophotofluorometer body F-4500 (manufactured by Hitachi High-Technologies Corporation) is usable. Any device for phosphorescence measurement is usable. A combination of a cooling unit, a low temperature container, an excitation light source and a light-receiving unit may be used for phosphorescence measurement. Singlet Energy S1 A method of measuring a singlet energy S1with use of a solution (occasionally referred to as a solution method) is exemplified by a method below. A toluene solution in which a measurement target compound is dissolved at a concentration of 10 μmol/L is prepared and is encapsulated in a quartz cell to provide a measurement sample. Absorption spectrum (ordinate axis: absorption intensity, abscissa axis: wavelength) of the sample is measured at the normal temperature (300K). A tangent is drawn to the fall of the absorption spectrum on the long-wavelength side, and a wavelength value λedge (nm) at an intersection of the tangent and the abscissa axis is assigned to a conversion equation (F2) below to calculate singlet energy. S1[eV]=1239.85/λedge Conversion Equation (F2): Any device for measuring absorption spectrum is usable. For instance, a spectrophotometer (U3310 manufactured by Hitachi, Ltd.) is usable. The tangent to the fall of the absorption spectrum on the long-wavelength side is drawn as follows. While moving on a curve of the absorption spectrum from the maximum spectral value closest to the long-wavelength region in a long-wavelength direction, a tangent at each point on the curve is checked. An inclination of the tangent is decreased and increased in a repeated manner as the curve fell (i.e., a value of the ordinate axis is decreased). A tangent drawn at a point of the minimum inclination closest to the long-wavelength region (except when absorbance is 0.1 or less) is defined as the tangent to the fall of the absorption spectrum close to the long-wavelength region. The maximum absorbance of 0.2 or less is not included in the above-mentioned maximum absorbance on the long-wavelength side. In the exemplary embodiment, a difference (S1-T77K) between the singlet energy S1and the energy gap T77Kat 77[K] is defined as ΔST. In the exemplary embodiment, a difference ΔST(Mat1) between the singlet energy S1(Mat1) of the first compound and the energy gap T77K(Mat1) at 77[K] of the first compound is preferably less than 0.3 eV, more preferably less than 0.2 eV, further preferably less than 0.1 eV. In other words, ΔST(Mat1) preferably satisfies a numerical formula ((Numerical Formula 1A), (Numerical Formula 1B) or (Numerical Formula 1C)) below. ΔST(Mat1)=S1(Mat1)−T77K(Mat1)<0.3 eV (Numerical Formula 1A) ΔST(Mat1)=S1(Mat1)−T77K(Mat1)<0.2 eV (Numerical Formula 1B) ΔST(Mat1)=S1(Mat1)−T77K(Mat1)<0.1 eV (Numerical Formula 1C) The organic EL device1in the exemplary embodiment preferably emits red light or green light. When the organic EL device1in the exemplary embodiment emits green light, a main peak wavelength of the light from the organic EL device1is preferably in a range from 500 nm to 560 nm. When the organic EL device1in the exemplary embodiment emits red light, a main peak wavelength of the light from the organic EL device1is preferably in a range from 600 nm to 660 nm. When the organic EL device1in the exemplary embodiment emits blue light, a main peak wavelength of the light from the organic EL device1is preferably in a range from 430 nm to 480 nm. A main peak wavelength of light from an organic EL device is measured as follows. Voltage is applied on the organic EL device such that a current density was 10 mA/cm2, where spectral radiance spectrum is measured by a spectroradiometer (CS-2000 manufactured by Konica Minolta, Inc.). A peak wavelength of the emission spectrum of the measured spectral radiance spectra is measured and determined to be the main peak wavelength (unit: nm). Film Thickness of Emitting Layer A film thickness of the emitting layer of the organic EL device1in the exemplary embodiment is preferably in a range of 5 nm to 50 nm, more preferably in a range of 7 nm to 50 nm, further preferably in a range of 10 nm to 50 nm. When the film thickness of the emitting layer is 5 nm or more, the formation of the emitting layer and the adjustment of the chromaticity are easy. When the film thickness of the emitting layer is 50 nm or less, an increase in the drive voltage is likely to be reducible. Content Ratios of Compounds in Emitting Layer Content ratios of the first and second compounds in the emitting layer5are, for instance, preferably determined as follows. The content ratio of the first compound is preferably in a range from 10 mass % to 80 mass %, more preferably in a range from 10 mass % to 60 mass %, further preferably in a range from 20 mass % to 60 mass %. The content ratio of the second compound is preferably in a range from 0.01 mass % to 10 mass %, more preferably in a range from 0.01 mass % to 5 mass %, further preferably in a range from 0.01 mass % to 1 mass %. It should be noted that the emitting layer5of the exemplary embodiment may further contain material(s) other than the first and second compounds. The emitting layer5may include a single type of the first compound or may include two or more types of the first compound. The emitting layer5may include a single type of the second compound or may include two or more types of the second corn pound. TADF Mechanism FIG.4shows an example of a relationship between energy levels of the first compound and the second compound in the emitting layer. InFIG.4, S0 represents a ground state. S1(Mat1) represents the lowest singlet state of the first compound. T1(Mat1) represents the lowest triplet state of the first compound. S1(Mat2) represents the lowest triplet state of the second compound. T1(Mat2) represents the lowest triplet state of the second compound. A dashed arrow directed from S1(Mat1) to S1(Mat2) inFIG.4represents Förster energy transfer from the lowest singlet state of the first compound to the lowest singlet state of the second compound. As shown inFIG.4, when a compound having a small ΔST(Mat1) is used as the first compound, inverse intersystem crossing from the lowest triplet state T1(Mat1) to the lowest singlet state S1(Mat1) can be caused by a heat energy. Subsequently, Förster energy transfer from the lowest singlet state S1(Mat1) of the first compound the second compound occurs to generate the lowest singlet state S1(Mat2). Consequently, fluorescence from the lowest singlet state S1(Mat2) of the second compound can be observed. It is inferred that the internal quantum efficiency can be theoretically raised up to 100% also by using delayed fluorescence by the TADF mechanism. The organic EL device1according to the third exemplary embodiment contains the first compound that is the compound according to the first exemplary embodiment (at least one of the compounds represented by the formulae (11) to (13)), and the second compound having the singlet energy smaller than that of the first compound in the emitting layer5. The organic EL device according to the third exemplary embodiment is applicable to an electronic device such as a display device and a light-emitting device. Arrangement(s) of an organic EL device1will be detailed below. The description of the reference signs may be omitted. Substrate The substrate is used as a support for the organic EL device. For instance, glass, quartz, plastics and the like are usable as the substrate. A flexible substrate is also usable. The flexible substrate is a bendable substrate, which is exemplified by a plastic substrate. Examples of the material for the plastic substrate include polycarbonate, polyarylate, polyethersulfone, polypropylene, polyester, polyvinyl fluoride, polyvinyl chloride, polyimide, and polyethylene naphthalate. Moreover, an inorganic vapor deposition film is also usable. Anode Metal having a large work function (specifically, 4.0 eV or more), an alloy, an electrically conductive compound and a mixture thereof are preferably used as the anode formed on the substrate. Specific examples of the material include ITO (Indium Tin Oxide), indium oxide-tin oxide containing silicon or silicon oxide, indium oxide-zinc oxide, indium oxide containing tungsten oxide and zinc oxide, and graphene. In addition, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chrome (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), titanium (Ti), and nitrides of a metal material (e.g., titanium nitride) are usable. The material is typically formed into a film by a sputtering method. For instance, the indium oxide-zinc oxide can be formed into a film by the sputtering method using a target in which zinc oxide in a range from 1 mass % to 10 mass % is added to indium oxide. Moreover, for instance, the indium oxide containing tungsten oxide and zinc oxide can be formed by the sputtering method using a target in which tungsten oxide in a range from 0.5 mass % to 5 mass % and zinc oxide in a range from 0.1 mass % to 1 mass % are added to indium oxide. In addition, the anode may be formed by a vacuum deposition method, a coating method, an inkjet method, a spin coating method or the like. Among the organic layers formed on the anode, since the hole injecting layer adjacent to the anode is formed of a composite material into which holes are easily injectable irrespective of the work function of the anode, a material usable as an electrode material (e.g., metal, an alloy, an electroconductive compound, a mixture thereof, and the elements belonging to the group 1 or 2 of the periodic table) is also usable for the anode. A material having a small work function such as elements belonging to Groups 1 and 2 in the periodic table of the elements, specifically, an alkali metal such as lithium (Li) and cesium (Cs), an alkaline earth metal such as magnesium (Mg), calcium (Ca) and strontium (Sr), alloys (e.g., MgAg and AlLi) including the alkali metal or the alkaline earth metal, a rare earth metal such as europium (Eu) and ytterbium (Yb), alloys including the rare earth metal are also usable for the anode. It should be noted that the vacuum deposition method and the sputtering method are usable for forming the anode using the alkali metal, alkaline earth metal and the alloy thereof. Further, when a silver paste is used for the anode, the coating method and the inkjet method are usable. Cathode It is preferable to use metal, an alloy, an electroconductive compound, and a mixture thereof, which have a small work function (specifically, 3.8 eV or less) for the cathode. Examples of the material for the cathode include elements belonging to Groups 1 and 2 in the periodic table of the elements, specifically, the alkali metal such as lithium (Li) and cesium (Cs), the alkaline earth metal such as magnesium (Mg), calcium (Ca) and strontium (Sr), alloys (e.g., MgAg and AlLi) including the alkali metal or the alkaline earth metal, the rare earth metal such as europium (Eu) and ytterbium (Yb), and alloys including the rare earth metal. It should be noted that the vacuum deposition method and the sputtering method are usable for forming the cathode using the alkali metal, alkaline earth metal and the alloy thereof. Further, when a silver paste is used for the cathode, the coating method and the inkjet method are usable. By providing the electron injecting layer, various conductive materials such as Al, Ag, ITO, graphene, and indium oxide-tin oxide containing silicon or silicon oxide may be used for forming the cathode regardless of the work function. The conductive materials can be formed into a film using the sputtering method, inkjet method, spin coating method and the like. Hole Injecting Layer The hole injecting layer is a layer containing a substance exhibiting a high hole injectability. Examples of the substance exhibiting a high hole injectability include molybdenum oxide, titanium oxide, vanadium oxide, rhenium oxide, ruthenium oxide, chrome oxide, zirconium oxide, hafnium oxide, tantalum oxide, silver oxide, tungsten oxide, and manganese oxide. In addition, the examples of the highly hole-injectable substance further include: an aromatic amine compound, which is a low-molecule organic compound, such that 4,4′,4″-tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4′,4″-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MTDATA), 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), 4,4′-bis(N-{4-[N′-(3-methylphenyl)-N′-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), 3-[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), and 3-[N-(1-naphthyl)-N-(9-phenylcarbazole-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1); and dipyrazino[2,3-f:20,30-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HAT-CN). In addition, a high polymer compound (e.g., oligomer, dendrimer and polymer) is usable as the substance exhibiting a high hole injectability. Examples of the high-molecule compound include poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N′-[4-(4-diphenylamino)phenyl]phenyl-N′-phenylamino}phenyl)methacrylamide] (abbreviation: PTP DMA), and poly[N, N′-bis(4-butylphenyl)-N, N′-bis(phenyl)benzidine] (abbreviation: Poly-TPD). Moreover, an acid-added high polymer compound such as poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonic acid) (PEDOT/PSS) and polyaniline/poly(styrene sulfonic acid)(PAni/PSS) are also usable. Hole Transporting Layer The hole transporting layer is a layer containing a highly hole-transporting substance. An aromatic amine compound, carbazole derivative, anthracene derivative and the like are usable for the hole transporting layer. Specific examples of a material for the hole transporting layer include an aromatic amine compound such as 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N′-bis(3-methylphenyl)-N, N′-diphenyl-[1,1′-biphenyl]-4,4′-diamine (abbreviation: TPD), 4-phenyl-4′-(9-phenylfluorene-9-yl)triphenylamine (abbreviation: BAFLP), 4,4′-bis[N-(9,9-dimethylfluorene-2-yl)-N-phenylamino]biphenyl (abbreviation: DFLDPBi), 4,4′,4″-tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4′,4″-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MTDATA), and 4,4′-bis[N-(spiro-9,9′-bifluorene-2-yl)-N-phenylamino]biphenyl (abbreviation: BSPB). The above-described substances mostly have a hole mobility of 10−6cm2/(V·s) or more. For the hole transporting layer, a carbazole derivative such as CBP, 9-[4-(N-carbazolyl)]phenyl-10-phenylanthracene (CzPA), and 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (PCzPA) and an anthracene derivative such as t BuDNA, DNA, and DPAnth may be used. A high polymer compound such as poly(N-vinylcarbazole) (abbreviation: PVK) and poly(4-vinyltriphenylamine) (abbreviation: PVTPA) is also usable. However, in addition to the above substances, any substance exhibiting a higher hole transportability than an electron transportability may be used. It should be noted that the layer containing the substance exhibiting a high hole transportability may be not only a single layer but also a laminate of two or more layers formed of the above substance(s). When the hole transporting layer includes two or more layers, one of the layers with a larger energy gap is preferably provided closer to the emitting layer. An example of the material with a larger energy gap is HT-2 used in later-described Examples. Electron Transporting Layer The electron transporting layer is a layer containing a highly electron-transporting substance. For the electron transporting layer, 1) a metal complex such as an aluminum complex, beryllium complex, and zinc complex, 2) a hetero aromatic compound such as imidazole derivative, benzimidazole derivative, azine derivative, carbazole derivative, and phenanthroline derivative, and 3) a high polymer compound are usable. Specifically, as a low-molecule organic compound, a metal complex such as Alq, tris(4-methyl-8-quinolinato)aluminum (abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium (abbreviation: BeBq2), BAIq, Znq, ZnPBO and ZnBTZ is usable. In addition to the metal complex, a heteroaromatic compound such as 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(ptert-butylphenyl)-1,3,4-oxadiazole-2-yl]benzene (abbreviation: OXD-7), 3-(4-tert-butylphenyl)-4-phenyl-5-(4-biphenylyl)-1,2,4-triazole (abbreviation: TAZ), 3-(4-tert-butylphenyl)-4-(4-ethylphenyl)-5-(4-biphenylyl)-1,2,4-triazole (abbreviation: p-EtTAZ), bathophenanthroline (abbreviation: BPhen), bathocuproine (abbreviation: BCP), and 4,4′-bis(5-methylbenzoxazole-2-yl)stilbene (abbreviation: BzOs) is usable. In the exemplary embodiment, a benzimidazole compound is preferably usable. The above-described substances mostly have an electron mobility of 10−6cm2/(V·s) or more. It should be noted that any substance other than the above substance may be used for the electron transporting layer as long as the substance exhibits a higher electron transportability than the hole transportability. The electron transporting layer may be provided in the form of a single layer or a laminate of two or more layers of the above substance(s). Moreover, a high polymer compound is usable for the electron transporting layer. For instance, poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)](abbreviation: PF-Py), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2′-bipyridine-6,6′-diyl)](abbreviation: PF-BPy) and the like are usable. Electron Injecting Layer The electron injecting layer is a layer containing a highly electron-injectable substance. Examples of a material for the electron injecting layer include an alkali metal, alkaline earth metal and a compound thereof, examples of which include lithium (Li), cesium (Cs), calcium (Ca), lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), and lithium oxide (LiOx). In addition, the alkali metal, alkaline earth metal or the compound thereof may be added to the substance exhibiting the electron transportability in use. Specifically, for instance, magnesium (Mg) added to Alq may be used. In this case, the electrons can be more efficiently injected from the anode. Alternatively, the electron injecting layer may be provided by a composite material in a form of a mixture of the organic compound and the electron donor. Such a composite material exhibits excellent electron injectability and electron transportability since electrons are generated in the organic compound by the electron donor. In this case, the organic compound is preferably a material excellent in transporting the generated electrons. Specifically, the above examples (e.g., the metal complex and the hetero aromatic compound) of the substance forming the electron transporting layer are usable. As the electron donor, any substance exhibiting electron donating property to the organic compound is usable. Specifically, the electron donor is preferably alkali metal, alkaline earth metal and rare earth metal such as lithium, cesium, magnesium, calcium, erbium and ytterbium. The electron donor is also preferably alkali metal oxide and alkaline earth metal oxide such as lithium oxide, calcium oxide, and barium oxide. Moreover, a Lewis base such as magnesium oxide is usable. Further, the organic compound such as tetrathiafulvalene (abbreviation: TTF) is usable. Layer Formation Method A method for forming each layer of the organic EL device in the third exemplary embodiment is subject to no limitation except for the above particular description. However, known methods of dry film-forming such as vacuum deposition, sputtering, plasma or ion plating and wet film-forming such as spin coating, dipping, flow coating or ink jet printing are applicable. Film Thickness A thickness of each of the organic layers in the organic EL device according to the third exemplary embodiment is not limited except for the above particular description. In general, the thickness preferably ranges from several nanometers to 1 μm in order to avoid defects such as a pin hole and to prevent efficiency from being deteriorated since a high voltage needs to be applied. Fourth Exemplary Embodiment An arrangement of an organic EL device according to a fourth exemplary embodiment will be described below. In the description of the fourth exemplary embodiment, the same components as those in the third exemplary embodiment are denoted by the same reference signs and names to simplify or omit an explanation of the components. In the fourth exemplary embodiment, any materials and compounds that are not specified may be the same as those in the third exemplary embodiment. The organic EL device according to the fourth exemplary embodiment is different from the organic EL device according to the third exemplary embodiment in that the emitting layer further includes a third compound. The rest of the arrangement of the organic EL device according to the fifth exemplary embodiment is the same as in the third exemplary embodiment. Specifically, in the fourth exemplary embodiment, the emitting layer as a first organic layer contains the first compound, the second compound and the third corn pound. In the fourth exemplary embodiment, the first compound is preferably a host material, the second compound is preferably a dopant material, and the third compound is preferably a material that disperses the dopant material in the emitting layer. Third Compound The third compound may be a thermally activated delayed fluorescent compound or a compound exhibiting no thermally activated delayed fluorescence. The third compound is not particularly limited, but is preferably a compound other than an amine compound. Although the third compound may be a carbazole derivative, dibenzofuran derivative, or dibenzothiophene derivative, the third compound is not limited thereto. It is also preferable that the third compound has at least one of a partial structure represented by a formula (31), a partial structure represented by a formula (32), a partial structure represented by a formula (33) and a partial structure represented by a formula (34) in one molecule. In the formula (31), Y31to Y36each independently represent a nitrogen atom or a carbon atom bonded to another atom in the molecule of the third compound. At least one of Y31to Y36is a carbon atom bonded to another atom in the molecule of the third compound. In the formula (32), Y41to Y48each independently represent a nitrogen atom or a carbon atom bonded to another atom in the molecule of the third compound. At least one of Y41to Y48is a carbon atom bonded to another atom in the molecule of the third compound. X30represents a nitrogen atom bonded to another atom in the molecule of the third compound, an oxygen atom, or a sulfur atom. The mark * in the formulae (33) to (34) each independently shows a bonding position with another atom or another structure in the molecule of the third compound. In the formula (32), it is also preferable that at least two of Y41to Y48are carbon atoms bonded to other atoms in the molecule of the third compound to form a cyclic structure including the carbon atoms. For instance, the partial structure represented by the formula (32) is preferably any one selected from the group consisting of partial structures represented by formulae (321), (322), (323), (324), (325) and (326). In the formulae (321) to (326), X30each independently represents a nitrogen atom bonded to another atom in the molecule of the third compound, an oxygen atom, or a sulfur atom. Y41to Y48each independently represent a nitrogen atom or a carbon atom bonded to another atom in the molecule of the third compound. X31each independently represents a nitrogen atom bonded to another atom in the molecule of the third compound, an oxygen atom, a sulfur atom, or a carbon atom bonded to another atom in the molecule of the third compound. Y6 to Y64each independently represent a nitrogen atom or a carbon atom bonded to another atom in the molecule of the third compound. In the exemplary embodiments, the third compound preferably has the partial structure represented by the formula (323) among those represented by the formulae (323) to (326). The partial structure represented by the formula (31) is preferably included in the third compound as at least one group selected from the group consisting of a group represented by a formula (33) and a group represented by a formula (34) below. It is also preferable that the third compound has at least one of the partial structures represented by the formulae (33) and (34). Since bonding positions are situated in meta positions as shown in the partial structures represented by the formulae (33) and (34), an energy gap T77K(Mat3) at 77 [K] of the second compound can be kept high. In the formula (33), Y31, Y32, Y34and Y36are each independently a nitrogen atom or CR31. In the formula (34), Y32, Y34and Y36are each independently a nitrogen atom or CR31. In the formulae (33) and (34), R31each independently represents a hydrogen atom or a substituent. R31as the substituent is each independently selected from the group consisting of a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms, a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted fluoroalkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 ring carbon atoms, a substituted or unsubstituted aralkyl group having 7 to 30 carbon atoms, a substituted or unsubstituted silyl group, a substituted germanium group, a substituted phosphine oxide group, a halogen atom, a cyano group, a nitro group, and a substituted or unsubstituted carboxy group. The substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms for R31is preferably a non-fused ring. The mark * in the formulae (33) and (34) each independently shows a bonding position with another atom or another structure in the molecule of the third corn pound. In the formula (33), Y31, Y32, Y34and Y36are each independently preferably CR31, in which a plurality of R31are the same or different. In the formula (34), Y32, Y34and Y36are each independently preferably CR31, in which a plurality of R31are the same or different. The substituted germanium group is preferably represented by —Ge(R301)3. R301 is each independently a substituent. The substituent R301 is preferably a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms or a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms. A plurality of R301 are mutually the same or different. The partial structure represented by the formula (32) is preferably included in the third compound as at least one group selected from the group consisting of groups represented by formulae (35) to (39) and a group represented by a formula (30a). In the formula (35), Y41to Y48are each independently a nitrogen atom or CR32. In the formulae (36) and (37), Y41to Y45, Y47and Y48are each independently a nitrogen atom or CR32. In the formula (38), Y41, Y42, Y44, Y45, Y47and Y48are each independently a nitrogen atom or CR32. In the formula (39), Y42to Y48are each independently a nitrogen atom or CR32. In the formula (30a), Y42to Y47are each independently a nitrogen atom or CR32. In the formulae (35) to (39) and (30a), R32each independently represents a hydrogen atom or a substituent. R32as the substituent is selected from the group consisting of a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms, a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted fluoroalkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 ring carbon atoms, a substituted or unsubstituted aralkyl group having 7 to 30 carbon atoms, a substituted or unsubstituted silyl group, a substituted germanium group, a substituted phosphine oxide group, a halogen atom, a cyano group, a nitro group, and a substituted or unsubstituted carboxy group. A plurality of R32are the same or different. In the formulae (37) to (39) and (30a), X30is NR33, an oxygen atom or a sulfur atom. R33is selected from the group consisting of a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms, a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted fluoroalkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 ring carbon atoms, a substituted or unsubstituted aralkyl group having 7 to 30 carbon atoms, a substituted or unsubstituted silyl group, a substituted germanium group, a substituted phosphine oxide group, a fluorine atom, a cyano group, a nitro group, and a substituted or unsubstituted carboxy group. A plurality of R33are the same or different. The substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms for R33is preferably a non-fused ring. The mark * in the formulae (35) to (39) and (30a) each independently shows a bonding position with another atom or another structure in the molecule of the third compound. In the formula (35), Y41to Y48are each independently preferably CR32. In the formulae (36) and (37), Y41to Y45, Y47and Y48are each independently preferably CR32. In the formula (38), Y41, Y42, Y44, Y45, Y47and Y48are each independently preferably CR32. In the formula (39), Y42to Y48are each independently preferably CR32. In the formula (30a), Y42to Y47are each independently preferably CR32. A plurality of R32are the same or different. In the third compound, X30is preferably an oxygen atom or a sulfur atom, more preferably an oxygen atom. In the third compound, R31and R32each independently represent a hydrogen atom or a substituent. R31and R32as the substituents are preferably each independently a group selected from the group consisting of a fluorine atom, a cyano group, a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms, and a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms. R31and R32are more preferably a hydrogen atom, a cyano group, a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms, or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms. When R31and R32as the substituents are each a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms, the aryl group is preferably a non-fused ring. It is also preferable that the third compound is an aromatic hydrocarbon compound or an aromatic heterocyclic compound. Manufacturing Method of Third Compound The third compound can be manufactured by methods disclosed in International Publication No. WO2012/153780, International Publication No. WO2013/038650, and the like. Furthermore, the second compound can be manufactured, for instance, by application of known substitution reactions and/or materials depending on a target compound. Examples of the substituent in the third compound are shown below, but the invention is not limited thereto. Specific examples of the aryl group (occasionally referred to as an aromatic hydrocarbon group) include a phenyl group, tolyl group, xylyl group, naphthyl group, phenanthryl group, pyrenyl group, chrysenyl group, benzo[c]phenanthryl group, benzo[g]chrysenyl group, benzoanthryl group, triphenylenyl group, fluorenyl group, 9,9-dimethylfluorenyl group, benzofluorenyl group, dibenzofluorenyl group, biphenyl group, terphenyl group, quarterphenyl group and fluoranthenyl group, among which a phenyl group, biphenyl group, terphenyl group, quarterphenyl group, naphthyl group, triphenylenyl group and fluorenyl group may be preferable. Specific examples of the aryl group having a substituent include a tolyl group, xylyl group and 9,9-dimethylfluorenyl group. As is understood from the specific examples, the aryl group includes both fused aryl group and non-fused aryl group. Preferable examples of the aryl group include a phenyl group, biphenyl group, terphenyl group, quarterphenyl group, naphthyl group, triphenylenyl group and fluorenyl group. Specific examples of the heteroaryl group (occasionally referred to as a heterocyclic group, heteroaromatic ring group or aromatic heterocyclic group) include a pyrrolyl group, pyrazolyl group, pyrazinyl group, pyrimidinyl group, pyridazynyl group, pyridyl group, triazinyl group, indolyl group, isoindolyl group, imidazolyl group, benzimidazolyl group, indazolyl group, imidazo[1,2-a]pyridinyl group, furyl group, benzofuranyl group, isobenzofuranyl group, dibenzofuranyl group, azadibenzofuranyl group, thiophenyl group, benzothienyl group, dibenzothienyl group, azadibenzothienyl group, quinolyl group, isoquinolyl group, quinoxalinyl group, quinazolinyl group, naphthyridinyl group, carbazolyl group, azacarbazolyl group, phenanthridinyl group, acridinyl group, phenanthrolinyl group, phenazinyl group, phenothiazinyl group, phenoxazinyl group, oxazolyl group, oxadiazolyl group, furazanyl group, benzoxazolyl group, thienyl group, thiazolyl group, thiadiazolyl group, benzothiazolyl group, triazolyl group and tetrazolyl group, among which a dibenzofuranyl group, dibenzothienyl group, carbazolyl group, pyridyl group, pyrimidinyl group, triazinyl group, azadibenzofuranyl group and azadibenzothienyl group may be preferable. The heteroaryl group is preferably a dibenzofuranyl group, dibenzothienyl group, carbazolyl group, pyridyl group, pyrimidinyl group, triazinyl group, azadibenzofuranyl group or azadibenzothienyl group, and more preferably a dibenzofuranyl group, dibenzothienyl group, azadibenzofuranyl group and azadibenzothienyl group. In the third compound, it is also preferable that the substituted silyl group is selected from the group consisting of a substituted or unsubstituted trialkylsilyl group, a substituted or unsubstituted arylalkylsilyl group, or a substituted or unsubstituted triarylsilyl group. Specific examples of the substituted or unsubstituted trialkylsilyl group include trimethylsilyl group and triethylsilyl group. Specific examples of the substituted or unsubstituted arylalkylsilyl group include diphenylmethylsilyl group, ditolylmethylsilyl group, and phenyldimethylsilyl group. Specific examples of the substituted or unsubstituted triarylsilyl group include triphenylsilyl group and tritolylsilyl group. In the third compound, it is also preferable that the substituted phosphine oxide group is a substituted or unsubstituted diary) phosphine oxide group. Specific examples of the substituted or unsubstituted diary) phosphine oxide group include a diphenyl phosphine oxide group and ditolyl phosphine oxide group. In the third compound, the substituted carboxy group is exemplified by a benzoyloxy group. Specific examples of the third compound in the exemplary embodiment are shown below. It should be noted that the third compound of the invention is not limited to the specific examples. Relationship Between First Compound, Second Compound and Third Compound in Emitting Layer In the organic EL device of the exemplary embodiment, the singlet energy S1(Mat1) of the first compound and a singlet energy S1(Mat3) of the third compound preferably satisfies a relationship of Numerical Formula 2 below. S1(Mat3)>S1(Mat1) (Numerical Formula 2) The energy gap T77K(Mat3) at 77 [K] of the third compound is preferably larger than an energy gap T77K(Mat1) at 77 [K] of the first compound. The energy gap T77K(Mat3) at 77 [K] of the third compound is preferably larger than the energy gap T77K(Mat2) at 77 [K] of the second compound The singlet energy S1(Mat1) of the first compound, the singlet energy S1(Mat2) of the second compound, the singlet energy S1(Mat3) of the third compound preferably satisfy a relationship of Numerical Formula 2A. S1(Mat3)>S1(Mat1)>S1(Mat2) (Numerical Formula 2A) The energy gap T77K(Mat1) at 77[K] of the first compound, the energy gap T77K(Mat2) at 77[K] of the second compound, and the energy gap T77K(Mat3) at 77[K] of the third compound preferably satisfy a relationship of Numerical Formula 2B. T77K(Mat3)>T77K(Mat1)>T77K(Mat2) (Numerical Formula 2B) When the organic EL device of the exemplary embodiment emits light, it is preferable that the fluorescent compound in the emitting layer mainly emits light. The organic EL device of the fourth exemplary embodiment preferably emits red light or green light in the same manner as the organic EL device of the third exemplary embodiment. A main peak wavelength of the organic EL device can be measured by the same method as that for the organic EL device of the third exemplary embodiment. Content Ratios of Compounds in Emitting Layer Content ratios of the first, second and third compounds in the emitting layer are, for instance, preferably determined as follows. The content ratio of the first compound is preferably in a range from 10 mass % to 80 mass %, more preferably in a range from 10 mass % to 60 mass %, further preferably in a range from 20 mass % to 60 mass %. The content ratio of the second compound is preferably in a range from 0.01 mass % to 10 mass %, more preferably in a range from 0.01 mass % to 5 mass %, further preferably in a range from 0.01 mass % to 1 mass %. The content ratio of the third compound is preferably in a range from 10 mass % to 80 mass %. An upper limit of the total of the respective content ratios of the first, second and third compounds in the emitting layer is 100 mass %. It should be noted that the emitting layer of the exemplary embodiment may further contain material(s) other than the first, second and third compounds. The emitting layer may include a single type of the first compound or may include two or more types of the first compound. The emitting layer may include a single of the second compound or may include two or more types of the second compound. The emitting layer may include a single of the third compound or may include two or more types of the third compound. FIG.5shows an example of a relationship between energy levels of the first, second and third compounds in the emitting layer. InFIG.5, S0 represents a ground state. S1(Mat1) represents the lowest singlet state of the first compound. T1(Mat1) represents the lowest triplet state of the first compound. S1(Mat2) represents the lowest singlet state of the second compound. T1(Mat2) represents the lowest triplet state of the second compound. S1(Mat3) represents the lowest singlet state of the third compound. T1(Mat3) represents the lowest triplet state of the third compound. A dashed arrow directed from S1(Mat1) to S1(Mat2) inFIG.5represents Forster energy transfer from the lowest singlet state of the first compound to the lowest singlet state of the second compound. As shown inFIG.5, when a compound having a small ΔST(Mat1) is used as the first compound, inverse intersystem crossing from the lowest triplet state T1(Mat1) to the lowest singlet state S1(Mat1) can be caused by a heat energy. Subsequently, Forster energy transfer from the lowest singlet state S1(Mat1) of the first compound the second compound occurs to generate the lowest singlet state S1(Mat2). Consequently, fluorescence from the lowest singlet state S1(Mat2) of the second compound can be observed. It is inferred that the internal quantum efficiency can be theoretically raised up to 100% also by using delayed fluorescence by the TADF mechanism. The organic EL device1according to the fourth exemplary embodiment contains the first compound that is the compound according to the first exemplary embodiment (at least one of the compounds represented by the formulae (11) to (13)), the second compound having the singlet energy smaller than that of the first compound in the emitting layer5, and the third compound having the singlet energy larger than that of the first compound. The organic EL device according to the fourth exemplary embodiment is applicable to an electronic device such as a display device and a light-emitting device. Fifth Exemplary Embodiment An arrangement of an organic EL device according to a fifth exemplary embodiment will be described below. In the description of the fifth exemplary embodiment, the same components as those in the third and fourth exemplary embodiments are denoted by the same reference signs and names to simplify or omit an explanation of the components. In the fifth exemplary embodiment, any materials and compounds that are not specified may be the same as those in the third and fourth exemplary embodiments. The organic EL device according to the fifth exemplary embodiment is different from the organic EL device according to the third exemplary embodiment in that the emitting layer further includes a fourth compound in place of the second compound. The rest of the arrangement of the organic EL device according to the fifth exemplary embodiment is the same as in the third exemplary embodiment. In the fifth exemplary embodiment, the emitting layer contains the first compound and the fourth compound. In this embodiment, the first compound is preferably a dopant material (occasionally referred to as a guest material, emitter or luminescent material) and the fourth compound is preferably a host material (occasionally referred to as a matrix material). The fourth compound may be a thermally activated delayed fluorescent compound or a compound exhibiting no thermally activated delayed fluorescence. Although the fourth compound is not particularly limited, for instance, the third compound described in the fourth exemplary embodiment is usable as the fourth compound. Relationship Between First Compound and Fourth Compound in Emitting Layer In the organic EL device of the exemplary embodiment, the singlet energy S1(Mat1) of the first compound and a singlet energy S1(Mat4) of the fourth compound preferably satisfies a relationship of Numerical Formula 4 below. S1(Mat4)>S1(Mat1) (Numerical Formula 4) An energy gap T77K(Mat4) at 77 [K] of the fourth compound is preferably larger than the energy gap T77K(Mat1) at 77 [K] of the first compound. In other words, a relationship of Numerical Formula 4A is preferably satisfied. T77K(Mat4)>T77K(Mat1) (Numerical Formula 4A) When the organic EL device of the exemplary embodiment emits light, it is preferable that the first compound in the emitting layer mainly emits light. Content Ratios of Compounds in Emitting Layer Content ratios of the first and fourth compounds in the emitting layer are, for instance, preferably determined as follows. The content ratio of the first compound is preferably in a range from 10 mass % to 80 mass %, more preferably in a range from 10 mass % to 60 mass %, further preferably in a range from 20 mass % to 60 mass %. The content ratio of the fourth compound is preferably in a range from 20 mass % to 90 mass %, more preferably in a range from 40 mass % to 90 mass %, further preferably in a range from 40 mass % to 80 mass %. It should be noted that the emitting layer of the exemplary embodiment may further contain material(s) other than the first and fourth compounds. The emitting layer may include a single type of the first compound or may include two or more types of the first compound. The emitting layer may include a single type of the fourth compound or may include two or more types of the fourth compound. FIG.6shows an example of a relationship between energy levels of the first and fourth compounds in the emitting layer. InFIG.6, S0 represents a ground state. S1(Mat1) represents the lowest singlet state of the first compound. T1(Mat1) represents the lowest triplet state of the first compound. S1(Mat4) represents the lowest singlet state of the fourth compound. T1(Mat4) represents the lowest triplet state of the fourth compound. Dashed arrows inFIG.6represent energy transfer from the fourth compound to the first compound in the lowest singlet state and in the lowest triplet state, respectively. An energy transfer occurs by Forster transfer from the lowest singlet state S1 of the fourth compound to the lowest singlet state S1 of the first compound or an energy transfer occurs by Dexter transfer from the lowest triplet stateT1 of the fourth compound to the lowest triplet stateT1 of the first compound. Further, when a material having a small ΔST(Mat1) is used as the first compound, inverse intersystem crossing can be caused by a heat energy from the lowest triplet state T1 to the lowest singlet state S1 in the first compound. Consequently, fluorescence from the lowest singlet state S1 of the first compound can be observed. It is inferred that the internal quantum efficiency can be theoretically raised up to 100% also by using delayed fluorescence by the TADF mechanism. The organic EL device according to the fifth exemplary embodiment contains the first compound that is the compound according to the first exemplary embodiment (at least one of the compounds represented by the formulae (11) to (13)), and the fourth compound having the singlet energy larger than that of the first compound in the emitting layer. The organic EL device according to the fifth exemplary embodiment is applicable to an electronic device such as a display device and a light-emitting device. Sixth Exemplary Embodiment Electronic Device An electronic device according to a sixth exemplary embodiment is installed with one of the organic EL devices according to the above exemplary embodiments. Examples of the electronic device include a display device and a light-emitting unit. Examples of the display device include a display component (e.g., an organic EL panel module), TV, mobile phone, tablet and personal computer. Examples of the light-emitting unit include an illuminator and a vehicle light. Modification of Embodiment(s) It should be noted that the invention is not limited to the above exemplary embodiments but may include any modification and improvement as long as such modification and improvement are compatible with the invention. For instance, the emitting layer is not limited to a single layer, but may be provided by laminating a plurality of emitting layers. When the organic EL device has a plurality of emitting layers, it is only required that at least one of the emitting layers satisfies the conditions described in the above exemplary embodiments. For instance, the rest of the emitting layers may be a fluorescent emitting layer or a phosphorescent emitting layer with use of emission caused by electron transfer from the triplet excited state directly to the ground state. When the organic EL device includes the plurality of emitting layers, the plurality of emitting layers may be adjacent to each other, or provide a so-called tandem-type organic EL device in which a plurality of emitting units are layered through an intermediate layer. For instance, a blocking layer may be provided adjacent to at least one of a side near the anode and a side near the cathode of the emitting layer. The blocking layer is preferably provided in contact with the emitting layer to at least block holes, electrons or excitons. For instance, when the blocking layer is provided in contact with the cathode-side of the emitting layer, the blocking layer permits transport of electrons, but blocks holes from reaching a layer provided near the cathode (e.g., the electron transporting layer) beyond the blocking layer. When the organic EL device includes the electron transporting layer, the organic EL device preferably includes the blocking layer between the emitting layer and the electron transporting layer. When the blocking layer is provided in contact with the anode-side of the emitting layer, the blocking layer permits transport of holes, but blocks electrons from reaching a layer provided near the anode (e.g., the hole transporting layer) beyond the blocking layer. When the organic EL device includes the hole transporting layer, the organic EL device preferably includes the blocking layer between the emitting layer and the hole transporting layer. Moreover, the blocking layer may abut on the emitting layer so that excited energy does not leak out from the emitting layer toward neighboring layer(s). The blocking layer blocks excitons generated in the emitting layer from being transferred to a layer(s) (e.g., the electron transporting layer and the hole transporting layer) closer to the electrode(s) beyond the blocking layer. The emitting layer and the blocking layer are preferably bonded with each other. Specific structure and shape of the components in the present invention may be designed in any manner as long as an object of the present invention can be achieved. Herein, numerical ranges represented by “x to y” represents a range whose lower limit is the value (x) recited before “to” and whose upper limit is the value (y) recited after “to.” Rx and Ry are mutually bonded to form a ring, which means herein, for instance, that Rx and Ry contain a carbon atom, a nitrogen atom, an oxygen atom, a sulfur atom or a silicon atom, the atom (a carbon atom, a nitrogen atom, an oxygen atom, a sulfur atom or a silicon atom) contained in Rx and the atom (a carbon atom, a nitrogen atom, an oxygen atom, a sulfur atom or a silicon atom) contained in Ry are mutually bonded via a single bond, a double bond, a triple bond or a divalent linking group to form a ring having 5 or more ring atoms (specifically, a heterocyclic ring or an aromatic hydrocarbon ring). x represents a number, a character or a combination of a number and a character. y represents a number, a character or a combination of a number and a character. The divalent linking group is not particularly limited and is exemplified by —O—, —CO—, —CO2—, —S—, —SO—, —SO2—, —NH—, —NRa—, and a group obtained by combining two or more linking groups of those. Specific examples of the heterocyclic ring include a cyclic structure (heterocyclic ring) obtained by removing a bond from a “heteroaryl group Sub2” exemplarily shown in the later-described “Description of Each Substituent in Formula.” The heterocyclic ring may have a substituent. Specific examples of the heterocyclic ring include a cyclic structure (heterocyclic ring) obtained by removing a bond from a “aryl group Sub1” exemplarily shown in the later-described “Description of Each Substituent in Formula.” The aromatic hydrocarbon ring may have a substituent. Examples of Ra include a substituted or unsubstituted alkyl group Sub3having 1 to 30 carbon atoms, a substituted or unsubstituted aryl group Sub1having 6 to 30 ring carbon atoms, and a substituted or unsubstituted heteroaryl Sub2group having 5 to 30 ring atoms, which are exemplarily shown in the later-described “Description of Each Substituent in Formula.” Rx and Ry are mutually bonded to form a ring, which means, for instance, that an atom contained in Rx1and an atom contained in Ry1in a molecular structure represented by a formula (E1) below form a ring (cyclic structure) E represented by a formula (E2); that an atom contained in Rx1and an atom contained in Ry1in a molecular structure represented by a formula (F1) below form a ring (cyclic structure) F represented by a formula (F2); that an atom contained in Rx1and an atom contained in Ry1in a molecular structure represented by a formula (G1) below form a ring (cyclic structure) G represented by a formula (G2); that an atom contained in Rx1and an atom contained in Ry1in a molecular structure represented by a formula (H1) below form a ring (cyclic structure) H represented by a formula (H2); and that an atom contained in Rx1and an atom contained in Ry1in a molecular structure represented by a formula (I1) below form a ring (cyclic structure) I represented by a formula (I2). In the formulae (E1) to (I1), * each independently represents a bonding position to another atom in a molecule. Two * in the formula (E1) correspond one-to-one to two * in the formula (E2). Two * in the formula (F1) correspond one-to-one to two * in the formula (F2). Two * in the formula (G1) correspond one-to-one to two * in the formula (G2). Two * in the formula (H1) correspond one-to-one to two * in the formula (H2). Two * in the formula (I1) correspond one-to-one to two * in the formula (I2). In the molecular structures represented by the respective formulae (E2) to (I2), E to I each represent a cyclic structure (the ring having 5 or more ring atoms). In the formulae (E2) to (I2), * each independently represents a bonding position to another atom in a molecule. Two * in the formula (E2) correspond one-to-one to two * in the formula (E1). Similarly, two * in each of the formulae (F2) to (I2) correspond one-to-one to two * in in each of the formulae (F1) to (I1). For instance, in the formula (E1), Rx1and Ry1are mutually bonded to for the ring E in the formula (E2) and the ring E is an unsubstituted benzene ring, the molecular structure represented by the formula (E1) is a molecular structure represented by a formula (E3) below. Herein, two * in the formula (E3) each independently correspond to two * in the formula (E2) and the formula (E1). For instance, in the formula (E1), Rx1and Ry1are mutually bonded to for the ring E in the formula (E2) and the ring E is an unsubstituted pyrrole ring, the molecular structure represented by the formula (E1) is a molecular structure represented by a formula (E4) below. Herein, two * in the formula (E4) each independently correspond to two * in the formula (E2) and the formula (E1). In the formulae (E3) and (E4), * each independently represents a bonding position to another atom in a molecule. Herein, the ring carbon atoms refer to the number of carbon atoms among atoms forming a ring of a compound (e.g., a monocyclic compound, fused-ring compound, crosslinking compound, carbon ring compound, and heterocyclic compound) in which the atoms are bonded to each other to form the ring. When the ring is substituted by a substituent(s), carbon atom(s) contained in the substituent(s) is not counted in the ring carbon atoms. Unless specifically described, the same applies to the “ring carbon atoms” described later. For instance, a benzene ring has 6 ring carbon atoms, a naphthalene ring has 10 ring carbon atoms, a pyridinyl group has 5 ring carbon atoms, and a furanyl group has 4 ring carbon atoms. When a benzene ring and/or a naphthalene ring is substituted by a substituent (e.g., an alkyl group), the number of carbon atoms of the alkyl group is not counted in the number of the ring carbon atoms. When a fluorene ring is substituted by a substituent (e.g., a fluorene ring) (i.e., a spirofluorene ring is included), the number of carbon atoms of the fluorene ring as the substituent is not counted in the number of the ring carbon atoms of the fluorene ring. Herein, the ring atoms refer to the number of atoms forming a ring of a compound (e.g., a monocyclic compound, fused-ring compound, crosslinking compound, carbon ring compound, and heterocyclic compound) in which the atoms are bonded to each other to form the ring (e.g., monocyclic ring, fused ring, ring assembly). Atom(s) not forming a ring and atom(s) included in a substituent when the ring is substituted by the substituent are not counted in the number of the ring atoms. Unless specifically described, the same applies to the “ring atoms” described later. For instance, a pyridine ring has six ring atoms, a quinazoline ring has ten ring atoms, and a furan ring has five ring atoms. A hydrogen atom(s) and/or an atom(s) of a substituent which are bonded to carbon atoms of a pyridine ring and/or quinazoline ring are not counted in the ring atoms. When a fluorene ring is substituted by a substituent (e.g., a fluorene ring) (i.e., a spirofluorene ring is included), the number of atoms of the fluorene ring as the substituent is not counted in the number of the ring atoms of the fluorene ring. Description of Each Substituent in Formula Herein The aryl group (occasionally referred to as an aromatic hydrocarbon group) herein is exemplified by an aryl group Sub1. The aryl group Sub1is at least one group selected from the group consisting of a phenyl group, biphenyl group, terphenyl group, naphthyl group, anthryl group, phenanthryl group, fluorenyl group, pyrenyl group, chrysenyl group, fluoranthenyl group, benz[a]anthryl group, benzo[c]phenanthryl group, triphenylenyl group, benzo[k]fluoranthenyl group, benzo[g]chrysenyl group, benzo[b]triphenylenyl group, picenyl group, and perylenyl group. Herein, the aryl group Sub1preferably has 6 to 30 ring carbon atoms, more preferably 6 to 20 ring carbon atoms, further preferably 6 to 14 ring carbon atoms, more further preferably 6 to 12 ring carbon atoms. Among the aryl group Sub1, a phenyl group, biphenyl group, naphthyl group, phenanthryl group, terphenyl group and fluorenyl group are preferable. A carbon atom in a position 9 of each of 1-fluorenyl group, 2-fluorenyl group, 3-fluorenyl group and 4-fluorenyl group is preferably substituted by a substituted or unsubstituted alkyl group Sub3or a substituted or unsubstituted aryl group Sub1described later herein. The heteroaryl group (occasionally referred to as heterocyclic group, heteroaromatic ring group or aromatic heterocyclic group) herein is exemplified by a heterocyclic group Sub2. The heterocyclic group Sub2is a group containing, as a hetero atom(s), at least one atom selected from the group consisting of nitrogen, sulfur, oxygen, silicon, selenium atom and germanium atom. Preferably, the heterocyclic group Sub2contains, as a hetero atom(s), at least one atom selected from the group consisting of nitrogen, sulfur and oxygen. Examples of the heterocyclic group Sub2herein are a pyridyl group, pyrimidinyl group, pyrazinyl group, pyridazinyl group, triazinyl group, quinolyl group, isoquinolinyl group, naphthyridinyl group, phthalazinyl group, quinoxalinyl group, quinazolinyl group, phenanthridinyl group, acridinyl group, phenanthrolinyl group, pyrrolyl group, imidazolyl group, pyrazolyl group, triazolyl group, tetrazolyl group, indolyl group, benzimidazolyl group, indazolyl group, imidazopyridinyl group, benzotriazolyl group, carbazolyl group, furyl group, thienyl group, oxazolyl group, thiazolyl group, isoxazolyl group, isothiazolyl group, oxadiazolyl group, thiadiazolyl group, benzofuranyl group, benzothienyl group, benzoxazolyl group, benzothiazolyl group, benzisoxazolyl group, benzisothiazolyl group, benzoxadiazolyl group, benzothiadiazolyl group, dibenzofuranyl group, dibenzothienyl group, piperidinyl group, pyrrolidinyl group, piperazinyl group, morpholyl group, phenazinyl group, phenothiazinyl group, and phenoxazinyl group. Herein, the heterocyclic group Sub2preferably has 5 to 30 ring atoms, more preferably 5 to 20 ring atoms, further preferably 5 to 14 ring atoms. Among the above heterocyclic group Sub2, a 1-dibenzofuranyl group, 2-dibenzofuranyl group, 3-dibenzofuranyl group, 4-dibenzofuranyl group, 1-dibenzothienyl group, 2-dibenzothienyl group, 3-dibenzothienyl group, 4-dibenzothienyl group, 1-carbazolyl group, 2-carbazolyl group, 3-carbazolyl group, 4-carbazolyl group, and 9-carbazolyl group are further more preferable. A nitrogen atom in position 9 of 1-carbazolyl group, 2-carbazolyl group, 3-carbazolyl group and 4-carbazolyl group is preferably substituted by the substituted or unsubstituted aryl group Sub1or the substituted or unsubstituted heterocyclic group Sub2described herein. Herein, the heterocyclic group Sub2may be a group derived from any one of moieties represented by formulae (XY-1) to (XY-18) below. In the formulae (XY-1) to (XY-18), XAand YAeach independently represent a hetero atom, and preferably represent an oxygen atom, sulfur atom, selenium atom, silicon atom or germanium atom. Each of the moieties represented by the respective formulae (XY-1) to (XY-18) has a bond at any position to provide a heterocyclic group. The heterocyclic group may be substituted. Herein, the heterocyclic group Sub2may be a group represented by one of formulae (XY-19) to (XY-22) below. Moreover, the position of the bond may be changed as needed The alkyl group herein may be any one of a linear alkyl group, branched linear alkyl group and cyclic linear alkyl group. The alkyl group herein is exemplified by an alkyl group Sub3. The linear alkyl group herein is exemplified by a linear alkyl group Sub31. The branched alkyl group herein is exemplified by a branched alkyl group Sub32. The cyclic alkyl group herein is exemplified by a cyclic alkyl group Sub33. For instance, the alkyl group Sub3is at least one group selected from the group consisting of the linear alkyl group Sub31, branched alkyl group Sub32, and cyclic alkyl group Sub33. The linear alkyl group Sub31or branched alkyl group Sub32is exemplified by at least one group selected from the group consisting of a methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, s-butyl group, isobutyl group, t-butyl group, n-pentyl group, n-hexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group, n-undecyl group, n-dodecyl group, n-tridecyl group, n-tetradecyl group, n-pentadecyl group, n-hexadecyl group, n-heptadecyl group, n-octadecyl group, neopentyl group, amyl group, isoamyl group, 1-methylpentyl group, 2-methylpentyl group, 1-pentylhexyl group, 1-butylpentyl group, 1-heptyloctyl group, and 3-methylpentyl group. Herein, the linear alkyl group Sub31or branched alkyl group Sub32preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, further preferably 1 to 10 carbon atoms, further more preferably 1 to 6 carbon atoms. The linear alkyl group Sub31or branched alkyl group Sub32is further more preferably a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, s-butyl group, isobutyl group, t-butyl group, n-pentyl group, n-hexyl group, amyl group, isoamyl group and neopentyl group. Herein, the cyclic alkyl group is exemplified by a cycloalkyl group Sub331. The cycloalkyl group Sub331herein is exemplified by at least one group selected from the group consisting of a cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, 4-metylcyclohexyl group, adamantyl group and norbornyl group. The cycloalkyl group Sub331preferably has 3 to 30 ring carbon atoms, more preferably 3 to 20 ring carbon atoms, further preferably 3 to 10 ring carbon atoms, further more preferably 5 to 8 ring carbon atoms. Among the cycloalkyl group Sub331, a cyclopentyl group and a cyclohexyl group are further more preferable. Herein, an alkyl halide group is exemplified by an alkyl halide group Sub4. The alkyl halide group Sub4is provided by substituting the alkyl group Sub3with at least one halogen atom, preferably at least one fluorine atom. Herein, the alkyl halide group Sub4is exemplified by at least one group selected from the group consisting of a fluoromethyl group, difluoromethyl group, trifluoromethyl group, fluoroethyl group, trifluoromethylmethyl group, trifluoroethyl group, and pentafluoroethyl group. Herein, a substituted silyl group is exemplified by a substituted silyl group Sub5. The substituted silyl group Sub5is exemplified by at least one group selected from the group consisting of an alkylsilyl group Sub51and an arylsilyl group Sub52. Herein, the alkylsilyl group Sub51is exemplified by a trialkylsilyl group Sub511having the above-described alkyl group Sub3. The trialkylsilyl group Sub511is exemplified by at least one group selected from the group consisting of a trimethylsilyl group, triethylsilyl group, tri-n-butylsilyl group, tri-n-octylsilyl group, triisobutylsilyl group, dimethylethylsilyl group, dimethylisopropylsilyl group, dimethyl-n-propylsilyl group, dimethyl-n-butylsilyl group, dimethyl-t-butylsilyl group, diethylisopropylsilyl group, vinyl dimethylsilyl group, propyldimethylsilyl group, and triisopropylsilyl group. Three alkyl groups Sub3in the trialkylsilyl group Sub511may be mutually the same or different. Herein, the arylsilyl group Sub52is exemplified by at least one group selected from the group consisting of a dialkylarylsilyl group Sub521, alkyldiarylsilyl group Sub522and triarylsilyl group Sub523. The dialkylarylsilyl group Sub521is exemplified by a dialkylarylsilyl group including two alkyl groups Sub3and one aryl group Sub1. The dialkylarylsilyl group Sub521preferably has 8 to 30 carbon atoms. The alkyldiarylsilyl group Sub522is exemplified by an alkyldiarylsilyl group including one alkyl group Sub3and two aryl groups Sub1. The alkyldiarylsilyl group Sub522preferably has 13 to 30 carbon atoms. The triarylsilyl group Sub523is exemplified by a triarylsilyl group including three aryl groups Sub1. The triarylsilyl group Sub523preferably has 18 to 30 carbon atoms. Herein, a substituted or unsubstituted alkyl sulfonyl group is exemplified by an alkyl sulfonyl group Sub6. The alkyl sulfonyl group Sub6is represented by —SO2Rw. Rwin —SO2Rwrepresents a substituted or unsubstituted alkyl group Sub3described above. Herein, an aralkyl group (occasionally referred to as an arylalkyl group) is exemplified by an aralkyl group Sub7. An aryl group in the aralkyl group Sub7includes, for instance, at least one of the above-described aryl group Sub1and the above-described heteroaryl group Sub2. The aralkyl group Sub7herein is preferably a group having the aryl group Sub1and is represented by —Z3—Z4. Z3is exemplified by an alkylene group corresponding to the above alkyl group Sub3. Z4is exemplified by the above aryl group Sub1. In this aralkyl group Sub7, an aryl moiety has 6 to 30 carbon atoms (preferably 6 to 20 carbon atoms, more preferably 6 to 12 carbon atoms) and an alkyl moiety has 1 to 30 carbon atoms (preferably 1 to 20 carbon atoms, more preferably 1 to 10 carbon atoms, further preferably 1 to 6 carbon atoms). The aralkyl group Sub7is exemplified by at least one group selected from the group consisting of a benzyl group, 2-phenylpropane-2-yl group, 1-phenylethyl group, 2-phenylethyl group, 1-phenylisopropyl group, 2-phenylisopropyl group, phenyl-t-butyl group, α-naphthylmethyl group, 1-α-naphthylethyl group, 2-α-naphthylethyl group, 1-α-naphthylisopropyl group, 2-α-naphthylisopropyl group, β-naphthylmethyl group, 1-β-naphthylethyl group, 2-β-naphthylethyl group, 1-β-naphthylisopropyl group, and 2-β-naphthylisopropyl group. The alkoxy group herein is exemplified by an alkoxy group Sub8. The alkoxy group Sub8is represented by —OZ1. Z1is exemplified by the above alkyl group Sub3. The alkoxy group Sub8is exemplified by at least one group selected from the group consisting of a methoxy group, ethoxy group, propoxy group, butoxy group, pentyloxy group and hexyloxy group. The alkoxy group Sub8preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms. Herein, an alkoxy halide group is exemplified by an alkoxy halide group Sub9. The alkoxy halide group Sub9is provided by substituting the alkoxy group Sub8with at least one halogen atom, preferably at least one fluorine atom. Herein, an aryloxy group (sometime referred to as an arylalkoxy group) is exemplified by an arylalkoxy group Sub10. An aryl group in the arylalkoxy group Sub10includes at least one of the aryl group Sub1and the heteroaryl group Sub2. The arylalkoxy group Sub10herein is represented by —OZ2. Z2is exemplified by the aryl group Sub1or the heteroaryl group Sub2. The arylalkoxy group Sub10preferably has 6 to 30 ring carbon atoms, more preferably 6 to 20 ring carbon atoms. The arylalkoxy group Sub10is exemplified by a phenoxy group. Herein, a substituted amino group is exemplified by a substituted amino group Sub11. The substituted amino group Sub11is exemplified by at least one group selected from the group consisting of an arylamino group Sub111and an alkylamino group Sub112. The arylamino group Sub111is represented by —NHRv1or —N(Rv1)2. Rv1is exemplified by the aryl group Sub1. Two Rv1in —N(Rv1)2are mutually the same or different. The alkylamino group Sub112is represented by —NHRv2or —N(Rv2)2. Rv2is exemplified by the alkyl group Sub3. Two Rv2in —N(Rv2)2are mutually the same or different. Herein, the alkenyl group is exemplified by an alkenyl group Sub12. The alkenyl group Sub12, which is linear or branched, is exemplified by at least one group selected from the group consisting of a vinyl group, propenyl group, butenyl group, oleyl group, eicosapentaenyl group, docosahexaenyl group, styryl group, 2,2-diphenylvinyl group, 1,2,2-triphenylvinyl group, and 2-phenyl-2-propenyl group. The alkynyl group herein is exemplified by an alkynyl group Sub13. The alkynyl group Sub13may be linear or branched and is at least one group selected from the group consisting of an ethynyl group, a propynyl group and a 2-phenylethynyl group. The alkylthio group herein is exemplified by an alkylthio group Sub14. The alkylthio group Sub14is represented by —SRv3. Rv3is exemplified by the alkyl group Sub3. The alkylthio group Sub14preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms. The arylthio group herein is exemplified by an arylthio group Sub15. The arylthio group Sub15is represented by —SRv4. Rv4is exemplified by the aryl group Sub1. The arylthio group Sub15preferably has 6 to 30 ring carbon atoms, more preferably 6 to 20 ring carbon atoms. Herein, examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, among which a fluorine atom is preferable. A substituted phosphino group herein is exemplified by a substituted phosphino group Sub16. The substituted phosphino group Sub16is exemplified by a phenyl phosphanyl group. An arylcarbonyl group herein is exemplified by an arylcarbonyl group Sub17. The arylcarbonyl group Sub17is represented by —COY′. Y′ is exemplified by the aryl group Sub1. Herein, the arylcarbonyl group Sub17is exemplified by at least one group selected from the group consisting of a phenyl carbonyl group, diphenyl carbonyl group, naphthyl carbonyl group, and triphenyl carbonyl group. An acyl group herein is exemplified by an acyl group Sub18. The acyl group Sub18is represented by —COR′. R′ is exemplified by the alkyl group Sub3. The acyl group Sub18herein is exemplified by at least one group selected from the group consisting of an acetyl group and a propionyl group. A substituted phosphoryl group herein is exemplified by a substituted phosphoryl group Sub19. The substituted phosphoryl group Sub19is represented by a formula (P) below. In the formula (P), ArP1and ArP2are any one substituent selected from the group consisting of the above alkyl group Sub3and the above aryl group Sub1. An ester group herein is exemplified by an ester group Sub20. The ester group Sub20is exemplified by an alkyl ester group. An alkyl ester group herein is exemplified by an alkyl ester group Sub201. The alkyl ester group Sub201is represented by —C(═O)ORE. REis exemplified by a substituted or unsubstituted alkyl group Sub3described above. A siloxanyl group herein is exemplified by a siloxanyl group Sub21. The siloxanyl group Sub21is a silicon compound group through an ether bond. The siloxanyl group Sub21is exemplified by a trimethylsiloxanyl group. A carbamoyl group herein is represented by —CONH2. A substituted carbamoyl group herein is exemplified by a carbamoyl group Sub22. The carbamoyl group Sub22is represented by —CONH—ArCor —CONH—RC. ArCis exemplified by at least one group selected from the group consisting of a substituted or unsubstituted aryl group Sub1(preferably 6 to 10 ring carbon atoms) and a substituted or unsubstituted heteroaryl group Sub2(preferably 5 to 14 ring atoms). ArCmay be a group formed by bonding the aryl group Sub1and the heteroaryl group Sub2. RCis exemplified by a substituted or unsubstituted alkyl group Sub3described above (preferably having 1 to 6 carbon atoms). Herein, “carbon atoms forming a ring (ring carbon atoms)” mean carbon atoms forming a saturated ring, unsaturated ring, or aromatic ring. “Atoms forming a ring (ring atoms)” mean carbon atoms and hetero atoms forming a ring including a saturated ring, unsaturated ring, or aromatic ring. Herein, a hydrogen atom includes isotope having different numbers of neutrons, specifically, protium, deuterium and tritium. Hereinafter, an alkyl group Sub3means at least one group of a linear alkyl group Sub31, a branched alkyl group Sub32, and a cyclic alkyl group Sub33described in “Description of Each Substituent.” Similarly, a substituted silyl group Sub5means at least one group of an alkylsilyl group Sub51and an arylsilyl group Sub52. Similarly, a substituted amino group Sub11means at least one group of an arylamino group Sub111and an alkylamino group Sub112. Herein, a substituent for a “substituted or unsubstituted” group is exemplified by a substituent RF1. The substituent RFC is at least one group selected from the group consisting of an aryl group Sub1, heteroaryl group Sub2, alkyl group Sub3, alkyl halide group Sub4, substituted silyl group Sub5, alkylsulfonyl group Sub6, aralkyl group Sub7, alkoxy group Sub8, alkoxy halide group Sub9, arylalkoxy group Sub10, substituted amino group Sub11, alkenyl group Sub12, alkynyl group Sub13, alkylthio group Sub14, arylthio group Sub15, substituted phosphino group Sub16, arylcarbonyl group Sub17, acyl group Sub18, substituted phosphoryl group Sub19, ester group Sub20, siloxanyl group Sub21, carbamoyl group Sub22, unsubstituted amino group, unsubstituted silyl group, halogen atom, cyano group, hydroxyl group, nitro group, and carboxy group. Herein, the substituent RF1for a “substituted or unsubstituted” group may be a diary) boron group (ArB1ArB2B—). ArB1and ArB2are exemplified by the above described aryl group Sub1. ArB1and ArB2in ArB1ArB2B— are the same or different. Specific examples and preferable examples of the substituent RFC are the same as those of the substituents described in “Description of Each Substituent” (e.g., an aryl group Sub1, heteroaryl group Sub2, alkyl group Sub3, alkyl halide group Sub4, substituted silyl group Sub5, alkylsulfonyl group Sub6, aralkyl group Sub7, alkoxy group Sub8, alkoxy halide group Sub9, arylalkoxy group Sub10, substituted amino group Sub11, alkenyl group Sub12, alkynyl group Sub13, alkylthio group Sub14, arylthio group Sub15, substituted phosphino group Sub16, arylcarbonyl group Sub17, acyl group Sub18, substituted phosphoryl group Sub19, ester group Sub20, siloxanyl group Sub21, and carbamoyl group Sub22). The substituent RF1for a “substituted or unsubstituted” group may be further substituted by at least one group (hereinafter, also referred to as a substitutent RF2) selected from the group consisting of an aryl group Sub1, heteroaryl group Sub2, alkyl group Sub3, alkyl halide group Sub4, substituted silyl group Sub5, alkylsulfonyl group Sub6, aralkyl group Sub7, alkoxy group Sub8, alkoxy halide group Sub9, arylalkoxy group Sub10, substituted amino group Sub11, alkenyl group Sub12, alkynyl group Sub13, alkylthio group Sub14, arylthio group Sub15, substituted phosphino group Sub16, arylcarbonyl group Sub17, acyl group Sub18, substituted phosphoryl group Sub19, ester group Sub20, siloxanyl group Sub21, carbamoyl group Sub22, unsubstituted amino group, unsubstituted silyl group, halogen atom, cyano group, hydroxyl group, nitro group, and carboxy group. Moreover, a plurality of substituents RF2may be bonded to each other to form a ring. Unsubstituted” for a “substituted or unsubstituted” group means that a group is not substituted by the above-described substituents but bonded with a hydrogen atom. Herein, “XX to YY carbon atoms” in the description of “substituted or unsubstituted ZZ group having XX to YY carbon atoms” represent carbon atoms of an unsubstituted ZZ group and do not include carbon atoms of the substituent RF1of the substituted ZZ group. Herein, “XX to YY atoms” in the description of “substituted or unsubstituted ZZ group having XX to YY atoms” represent carbon atoms of an unsubstituted ZZ group and do not include atoms of the substituent RF1of the substituted ZZ group. The same description as the above applies to “substituted or unsubstituted” in compounds or moieties thereof described herein. Herein, when the substituents are bonded to each other to form a ring, the ring is structured to be a saturated ring, an unsaturated ring, an aromatic hydrocarbon ring or a hetero ring. Herein, examples of the aromatic hydrocarbon group in the linking group include a divalent or multivalent group obtained by eliminating one or more atoms from the above monovalent aryl group Sub1. Herein, examples of the heterocyclic group in the linking group include a divalent or multivalent group obtained by eliminating one or more atoms from the above monovalent heteroaryl group Sub2. EXAMPLES Example(s) of the invention will be described below. However, the invention is not limited to Example(s). Compounds A compound represented by a formula (12), which is used for manufacturing an organic EL device in Example 6, is shown below. Structures of compounds used for manufacturing organic EL devices in Comparatives 2 and 3 are shown below. Structures of other compounds used for manufacturing organic EL devices in Example 6 and Comparatives 2 and 3 are shown below. A compound represented by the formula (12) or (13), which is used for the compound evaluation in Examples 1 to 5, is shown below. It should be noted that a compound TADF3 is identical with the compound TADF3 used for manufacturing the organic EL device in Example 6. The compound of Comparative 1 used for the compound evaluation is shown below. Preparation of Organic EL Device The organic EL devices were prepared and evaluated as follows. Example 6 A glass substrate (size: 25 mm×75 mm×1.1 mm thick, manufactured by Geomatec Co., Ltd.) having an ITO transparent electrode (anode) was ultrasonic-cleaned in isopropyl alcohol for five minutes, and then UV/ozone-cleaned for one minute. A film of ITO was 130 nm thick. After the glass substrate having the transparent electrode line was cleaned, the glass substrate was mounted on a substrate holder of a vacuum evaporation apparatus. Firstly, a compound HT1 and a compound HA were co-deposited on a surface of the glass substrate where the transparent electrode line was provided in a manner to cover the transparent electrode, thereby forming a 10-nm-thick hole injecting layer. The concentrations of the compound HT1 and the compound HA in the hole injecting layer were 97 mass % and 3 mass %, respectively. Next, the compound HT1 was vapor-deposited on the hole injecting layer to form a 200-nm-thick first hole transporting layer. Next, the compound HT2 was vapor-deposited on the first hole transporting layer to form a 10-nm-thick second hole transporting layer. Next, the compound TADF3 as the first compound, a compound RD as the second compound, and a compound CBP as the third compound are co-deposited on the second hole transporting layer to form a 25-nm-thick emitting layer as the first organic layer. The concentrations of the compound TADF3, the compound RD, and the compound CBP in the emitting layer were 25 mass %, 1 mass %, and 74 mass %, respectively. Next, a compound ET1 was vapor-deposited on the emitting layer to form a 10-nm-thick first electron transporting layer. Next, a compound ET2 was vapor-deposited on the first electron transporting layer to form a 30-nm-thick second electron transporting layer. Next, lithium fluoride (LiF) was vapor-deposited on the second electron transporting layer to form a 1-nm-thick electron injectable electrode (cathode). Subsequently, metal aluminum (Al) was vapor-deposited on the electron injectable electrode to form an 80-nm-thick metal Al cathode. A device arrangement of the organic EL device of Example 6 is roughly shown as follows. ITO(130)/HT1:HA(10.97%:3%)/HT1(200)/HT2(10)/CBP:TADF3:RD(25.74%: 25%: 1%)/ET1(10)/ET2(30)/LiF(1)/AI(80) Numerals in parentheses represent a film thickness (unit: nm). The numerals (97%:3%) represented by percentage in the same parentheses each indicate a ratio (mass %) between the compound HT1 and the compound HA in the hole injecting layer, and the numerals (74%:25%:1%) represented by percentage in the same parentheses each indicate a ratio (mass %) between the third compound, the first compound, and the second compound in the emitting layer. Similar notations apply to the description below. Comparatives 2 and 3 Organic EL devices in Comparatives 2 and 3 were manufactured in the same manner as in Example 6 except that the emitting layer in Example 6 was replaced by the emitting layers shown in Table 20. Evaluation of Organic EL Devices The manufactured organic EL devices were evaluated as follows. Results are shown in Table 20. Chromaticity CIEx, CIEy, and Main Peak Wavelength λp Voltage was applied on each of the organic EL devices such that a current density was 10 mA/cm2, where spectral radiance spectra were measured by a spectroradiometer CS-2000 (manufactured by Konica Minolta, Inc.). The chromaticities CIEx and CIEy and main peak wavelength λp(unit: nm) were calculated based on the obtained spectral-radiance spectra. Drive Voltage A voltage (unit: V) was measured when current was applied between the anode and the cathode such that a current density was 10 mA/cm2. TABLE 20Emitting LayerEvaluationFirst CompoundSecond CompoundThird CompoundλpVoltageTypeS1[eV]TypeS1[eV]TypeS1[eV]CIExCIEy[nm][V]Example 6TADF32.48RD2.02CBP3.410.630.376273.99Comparative 2Ref-22.62RDCBP0.670.336304.47Comparative 3Ref-32.44RDCBP0.660.346294.36 The organic EL device in Example 6 including the compound represented by the formula (12) that is the first compound, the fluorescent compound that is the second compound, and the third compound exhibited a lower drive voltage than those of the organic EL devices in Comparatives 2 and 3. Evaluation of Compounds Physical properties of the compounds were measured by the following method. Weight Reduction Temperature A 1%-weight reduction temperature and a 5%-weight reduction temperature were measured with a simultaneous thermogravimetry/differential thermal analyzer under the following conditions. Results are shown in Table 21. Thermogravimetry-differential thermal analysis is a method of continuously measuring mass changes of a sample when the sample is heated, and used for detecting physical changes accompanied by the mass changes such as sublimation and evaporation. Therefore, in this evaluation, a “high” weight reduction temperature and a “low” weight reduction temperature obtained by TG-DTA are regarded as a “high” sublimation temperature and a “low” sublimation temperature, respectively, under high vacuum. Herein, “under high vacuum” refers to a range from 1.0×10−6Pa to 1.0×10−3Pa. Measurement ConditionsDevice: thermogravimetry/differential thermal analyzer (STA7200RV manufactured by Hitach High-Tech Corporation)Container: aluminum panMass of Sample: 3.0 mgMeasurement Atmosphere: nitrogen gas atmosphereTemperature Rise Rate: 10 degrees C. per minuteMeasurement Range: from 35 degrees C. to 600 degrees C.Delayed Fluorescence PropertiesDelayed Fluorescence of Compound TADF1 Delayed fluorescence properties were checked by measuring transient photoluminescence (PL) using a device shown inFIG.2. The compound TADF1 is dissolved in toluene to prepare a dilute solution with an absorbance of 0.05 or less at the excitation wavelength to eliminate the contribution of self-absorption. In order to prevent quenching due to oxygen, the sample solution was frozen and degassed and then sealed in a cell with a lid under an argon atmosphere to obtain an oxygen-free sample solution saturated with argon. The fluorescence spectrum of the sample solution was measured with a spectrofluorometer FP-8600 (manufactured by JASCO Corporation), and the fluorescence spectrum of a 9,10-diphenylanthracene ethanol solution was measured under the same conditions. Using the fluorescence area intensities of both spectra, the total fluorescence quantum yield is calculated by an equation (1) in Morris et al. J. Phys. Chem. 80 (1976) 969. Prompt emission was observed immediately when the excited state was achieved by exciting the compound TADF1 with a pulse beam (i.e., a beam emitted from a pulse laser) having a wavelength to be absorbed by the compound TADF1, and Delay emission was observed not immediately when the excited state was achieved but after the excited state was achieved. The delayed fluorescence in Examples means that an amount of Delay Emission is 5% or more with respect to an amount of Prompt Emission. Specifically, provided that the amount of Prompt emission is denoted by XPand the amount of Delay emission is denoted by XD, the delayed fluorescence means that a value of XD/XPis 0.05 or more. An amount of Prompt emission, an amount of Delay emission and a ratio between the amounts thereof can be obtained according to the method as described in “Nature 492, 234-238, 2012” (Reference Document 1). The amount of Prompt emission and the amount of Delay emission may be calculated using a device different from one described in Reference Document 1 or one shown inFIG.2. It was confirmed that the amount of Delay Emission was 5% or more with respect to the amount of Prompt Emission in the compound TADF1. Specifically, the value of XD/XPwas 0.05 or more in the compound TADF1. Delayed Fluorescence Properties of Compounds TADF2 to TADF5 and Ref-1 to Ref-3 Compounds TADF2 to TADF5 and Ref-1 to Ref-3 were checked in terms of delayed fluorescence in the same manner as above except that the compound TADF1 was replaced by the compounds TADF2 to TADF5 and Ref-1 to Ref-3. The value of XD/XPwas 0.05 or more in the compounds TADF2 to TADF5 and Ref-1 to Ref-3. Singlet Energy S1 Singlet energy S1of each of the compounds TADF1 to TADF5, RD, CBP, and Ref-1 to Ref-3 was measured according to the above-described solution method. Results are shown in Tables 20 and 21. ΔST T77Kof each of the compounds TADF1 to TADF5 and Ref-1 to Ref-3 was measured. ΔST was checked from the measurement results of T77Kand the values of the singlet energy S1described above. Results are shown in Tables 20 and 21. T77Kof each of the compounds TADF1 to TADF5 and Ref-1 to Ref-3 was measured by the measurement method described above in “Relationship between Triplet Energy and Energy Gap at 77K.” ΔST of each of each of the compounds TADF1 to TADF5 and Ref-1 to Ref-2 was less than 0.01 eV. ΔST of the compound Ref-3 was 0.22 eV. Main Peak Wavelength λ of Compounds A 5-μmol/L toluene solution of each of the compounds (measurement target) was prepared and put in a quartz cell. A fluorescence spectrum (ordinate axis: fluorescence intensity, abscissa axis: wavelength) of each of the samples was measured at a normal temperature (300K). In Examples, the fluorescence spectrum was measured using a spectrophotometer (F-7000 manufactured by Hitachi, Ltd.). It should be noted that the fluorescence spectrum measuring device may be different from the above device. A peak wavelength of the fluorescence spectrum exhibiting the maximum luminous intensity was defined as a main peak wavelength. Results are shown in Table 21. The measurement results of the compounds RD and Ref-2 were as follows. The main peak wavelength of the compound RD was 609 nm. The main peak wavelength of the compound Ref-2 was 499 nm. TABLE 21Weight ReductionCom-MolecularTemperature (° C.)S1λpoundWeightTG1%TG5%[eV][nm]Example 1TADF19543994412.37558Example 2TADF29544124622.42550Example 3TADF39543844372.48538(Example 6)Example 4TADF411194625092.45545Example 5TADF511194735282.36571ComparativeRef-114504955612.415551ComparativeRef-311494935402.445363 Description about Table “TG1%” represents a 1%-weight reduction temperature. “TG5%” represents a 5%-weight reduction temperature. The compounds TADF1 to TADF5 in Examples 1 to 5 exhibited lower 1%-weight reduction temperature and 5%-weight reduction temperature than the compounds Ref-1 and Ref-3 in Comparatives 1 and 3. The compounds TADF1 to TADF5 in Examples 1 to 5 and the compound Ref-1 were sublimated and purified under high vacuum (in a range from 1.0×10−6to 1.0×10−3Pa). Since all of the compounds TADF1 to TADF5 in Examples 1 to 5 exhibited the lower 1%-weight reduction temperature and 5%-weight reduction temperature than the compound Ref-1, the sublimation temperature of each of the compounds TADF1 to TADF5 in Examples 1 to 5 was estimated to be lower than the sublimation temperature of the compound formed by bonding four groups each represented by one of the formulae (1-1) to (1-6) to a benzene ring of dicyanobenzene. It should be noted that the compound Ref-1 of Comparative 1 was decomposed during sublimation purification, resulting in no sublimation purification. It is estimated from this result that the compound Ref-1 of Comparative 1 has a higher sublimation temperature than the compounds TADF1 to TADF5 in Examples 1 to 5. Moreover, the value of XD/XPof each of the compounds TADF1 to TADF5 in Examples 1 to 5 was 0.05 or more. Therefore, according to Examples, the compound capable of decreasing the sublimation temperature when the compound is sublimated and purified, while maintaining the TADF properties, was obtained. The compounds in TADF1 to TADF5 in Examples 1 to 5 and the compound Ref-1 in Comparative 1 were manufactured as follows. Example 1 (1) Synthesis Example 1: Synthesis of Compound TADF1 (1-1) Synthesis of Intermediate A Under nitrogen atmosphere, into a 300-mL three-necked flask, 5,7-dihydro-5-phenyl-Indolo[2,3-b]carbazole (8.3 g, 25 mmol), N,N-diisopropylethylamine(iPr2NEt) (5 g, 37 mmol), tetrafluorophthalonitrile (10 g, 50 mmol), and N,N-dimethyl formamide (DMF) (120 mL) were put, and stirred at the room temperature (25 degrees C.) for 10 hours, subsequently to which 100-mL water was added. The deposited solid was purified by silica-gel column chromatography to obtain an orange solid (11.2 g). The obtained solid was identified as an intermediate according to by ASAP-MS (Atmospheric Pressure Solid Analysis Probe Mass Spectrometry) (a yield rate: 88%). In the scheme, “r.t.” represents the room temperature. (1-2) Synthesis of TADF1 Under nitrogen atmosphere, into a 100-mL three-necked flask, carbazole (3.3 g, 19.7 mmol), sodium hydride (containing oil at 40 mass %) (0.79 g, 19.7 mmol), and tetrahydrofuran (THF) (100 mL) were put, and stirred at the room temperature (25 degrees C.) for 30 minutes. Next, the intermediate A (2.6 g, 5.0 mmol) was put into the flask. Two hours later, the reaction mixture was added to 100-mL water. The deposited solid was purified by silica-gel column chromatography to obtain an orange solid (3.19 g). The obtained solid was identified as TADF1 by analysis according to ASAP-MS (a yield rate: 67%). Example 2 (2) Synthesis Example 2: Synthesis of Compound TADF2 (2-1) Synthesis of Intermediate B Under nitrogen atmosphere, into a 300-mL three-necked flask, 5,7-dihydro-5-phenyl-Indolo[2,3-b]carbazole (8.3 g, 25 mmol), N,N-diisopropylethylamine(iPr2NEt) (5 g, 37 mmol), tetrafluoroisophthalonitrile (10 g, 50 mmol), and N,N-dimethyl formamide (DMF) (120 mL) were put, and stirred at the room temperature (25 degrees C.) for 10 hours, subsequently to which 100-mL water was added. The deposited solid was purified by silica-gel column chromatography to obtain an orange solid (6.5 g). The obtained solid was identified as an intermediate B according to ASAP-MS (a yield rate: 51%). (2-2) Synthesis of TADF2 Under nitrogen atmosphere, into a 100-mL three-necked flask, carbazole (1.7 g, 10 mmol), sodium hydride (containing oil at 40 mass %)(0.40 g, 10 mmol), and tetrahydrofuran (THF) (50 mL) were put, and stirred at the room temperature (25 degrees C.) for 30 minutes. Next, the intermediate B (1.3 g, 2.5 mmol) was put into the flask. Two hours later, the reaction mixture was added to 100-mL water. The deposited solid was purified by silica-gel column chromatography to obtain an orange solid (1.4 g). The obtained solid was identified as TADF2 by analysis according to ASAP-MS (a yield rate: 58.7%). Example 3 (3) Synthesis Example 3: Synthesis of Compound TADF3 (3-1) Synthesis of Intermediate C Under nitrogen atmosphere, into a 300-mL three-necked flask, 11,12-dihydro-11-phenylindolo[2,3-a]carbazole (10 g, 30 mmol), N,N-diisopropylethylamine(iPr2NEt) (8.2 g, 60 mmol), tetrafluoroisophthalonitrile (12 g, 60 mmol), and N,N-dimethyl formamide (DMF) (200 mL) were put, and stirred at the room temperature (25 degrees C.) for 6 hours, subsequently to which 100-mL water was added. The deposited solid was purified by silica-gel column chromatography to obtain an orange solid (9.7 g). The obtained solid was identified as an intermediate C according to ASAP-MS (a yield rate: 63%). (3-2) Synthesis of TADF3 Under nitrogen atmosphere, into a 100-mL three-necked flask, carbazole (1.7 g, 10 mmol), sodium hydride (containing oil at 40 mass %) (0.40 g, 10 mmol), and tetrahydrofuran (THF) (50 mL) were put, and stirred at the room temperature (25 degrees C.) for 30 minutes. Next, the intermediate C (1.3 g, 2.5 mmol) was put into the flask. Two hours later, the reaction mixture was added to 100-mL water. The deposited solid was purified by silica-gel column chromatography to obtain an orange solid (1.8 g). The obtained solid was identified as TADF3 by analysis according to ASAP-MS (a yield rate: 75%). Example 4 (4) Synthesis Example 4: Synthesis of Compound TADF4 (4-1) Synthesis of Intermediate D Under nitrogen atmosphere, into a 500-mL three-necked flask, carbazole (17 g, 100 mmol), N,N-diisopropylethylamine(iPr2NEt) (21 g, 150 mmol), tetrafluoroisophthalonitrile (8 g, 40 mmol), and N,N-dimethyl formamide (DMF) (200 mL) were put, and stirred at 60 degrees C. for 4 hours. Subsequently, the reaction mixture was added to 100-mL water. The deposited solid was purified by silica-gel column chromatography to obtain a yellow solid (7.5 g). The obtained solid was identified as an intermediate D by analysis according to ASAP-MS and1H-NMR (a yield rate: 38%). (4-2) Synthesis of TADF4 Under nitrogen atmosphere, into a 100-mL three-necked flask, 5,7-dihydro-5-phenyl-Indolo[2,3-b]carbazole (2.5 g, 7.5 mmol), sodium hydride (containing oil at 40 mass %) (0.3 g, 7.5 mmol), and tetrahydrofuran (THF) (40 mL) were put, and stirred at the room temperature (25 degrees C.) for 30 minutes. Next, the intermediate D (1.4 g, 3 mmol) was put into the reaction mixture. Two hours later, the reaction mixture was added to 200-mL water. The deposited solid was purified by silica-gel column chromatography to obtain an orange solid (2.71 g). The obtained solid was identified as TADF4 by analysis according to ASAP-MS (a yield rate: 81%). Example 5 (5) Synthesis Example 5: Synthesis of Compound TADF5 (5-1) Synthesis of TADF5 Under nitrogen atmosphere, into a 100-mL three-necked flask, 5-phenyl-5,8-dihydroindolo[2,3-c]carbazole (2.5 g, 7.5 mmol), sodium hydride (containing oil at 40 mass %) (0.3 g, 7.5 mmol), and tetrahydrofuran (THF) (40 mL) were put, and stirred at the room temperature (25 degrees C.) for 30 minutes. Next, the intermediate D (1.4 g, 3 mmol) was put into the reaction mixture. Two hours later, the reaction mixture was added to 200-mL water. The deposited solid was purified by silica-gel column chromatography to obtain an orange solid (1.7 g). The obtained solid was identified as TADF5 by analysis according to ASAP-MS (a yield rate: 54%). Comparative 1 Under nitrogen atmosphere, into a 100-mL three-necked flask, 5,7-dihydro-5-phenyl-Indolo[2,3-b]carbazole (3.3 g, 10 mmol), sodium hydride (containing oil at 40 mass %) (0.4 g, 10 mmol), and tetrahydrofuran (THF) (50 mL) were put, and stirred at the room temperature (25 degrees C.) for 30 minutes. Next, tetrafluoroisophthalonitrile (0.44 g, 2.2 mmol) was put into the reaction mixture. Two hours later, the reaction mixture was added to 30-mL water. The deposited solid was purified by silica-gel column chromatography to obtain an orange solid (1.90 g). The obtained solid was identified as a compound Ref-1 by analysis according to ASAP-MS (a yield rate: 60%). EXPLANATION OF CODE(S) 1. . . organic EL device,2. . . substrate,3. . . anode,4. . . cathode,5. . . emitting layer,6. . . hole injecting layer,7. . . hole transporting layer,8. . . electron transporting layer,9. . . electron injecting layer. | 186,694 |
11944010 | DESCRIPTION OF EMBODIMENTS The contents of the invention will be described in detail below. The constitutional elements may be described below with reference to representative embodiments and specific examples of the invention, but the invention is not limited to the embodiments and the examples. In the description, a numerical range expressed with reference to the expressions, an upper limit or less and/or a lower limit or more, means a range that includes the upper limit and/or the lower limit. In the invention, the hydrogen atom that is present in the compound used in the invention is not particularly limited in isotope species, and for example, all the hydrogen atoms in the molecule may be1H, and all or a part of them may be2H (deuterium (D)). Layer Structure of Organic Electroluminescent Device The organic electroluminescent device of the invention has a structure containing an anode, a cathode, and an organic layer formed between the anode and the cathode. The organic layer includes at least a light emitting layer, and the organic electroluminescent device of the invention has a characteristic feature in the constitution of the light emitting layer. The constitution of the light emitting layer will be described later. The organic layer may contain only a light emitting layer, or may contain one or more additional organic layers in addition to the light emitting layer. Examples of the additional organic layer include a hole transporting layer, a hole injection layer, an electron barrier layer, a hole barrier layer, an electron injection layer, an electron transporting layer, and an exciton barrier layer. The hole transporting layer may be a hole injection and transporting layer having a hole injection function, and the electron transporting layer may be an electron injection and transporting layer having an electron injection function. A specific structural example of the organic electroluminescent device is shown inFIG.1. InFIG.1, the numeral1denotes a substrate,2denotes an anode,3denotes a hole injection layer,4denotes a hole transporting layer,5denotes a light emitting layer,6denotes an electron transporting layer, and7denotes a cathode. The members and the layers of the organic electroluminescent device will be described below. Light Emitting Layer In the light emitting layer, holes and electrons injected from the anode and the cathode respectively are recombined to form excitons, and then the layer emits light. In the organic electroluminescent device of the invention, the light emitting layer contains the first organic compound, the second organic compound, and the third organic compound that satisfy the following expression (A), in which the second organic compound is a delayed fluorescent material, and the third organic compound is a light emitting material. ES1(A)>ES1(B)>ES1(C) (A) In the expression (A), ES1(A) represents the lowest singlet excitation energy level of the first organic compound; ES1(B) represents the lowest singlet excitation energy level of the second organic compound; and ES1(C) represents the lowest singlet excitation energy level of the third organic compound. The delayed fluorescent material in the invention means an organic compound that is capable of being transferred to the triplet excited state and then undergoing inverse intersystem crossing to the singlet excited state, and emits fluorescent light on returning from the singlet excited state to the ground state. The light formed through the inverse intersystem crossing from the triplet excited state to the singlet excited state has a lifetime that is longer than normal fluorescent light (prompt fluorescent light) and phosphorescent light, and thus is observed as fluorescent light that is delayed therefrom. Accordingly, the fluorescent light of this type is referred to as delayed fluorescent light. In the light emitting layer, the first to third organic compounds have the lowest singlet excitation energy levels ES1(A), ES1(B), and ES1(C) satisfying the expression (A), and the second organic compound is a delayed fluorescent material, whereby the excitation energy formed through recombination of holes and electrons injected to the light emitting layer is efficiently converted to fluorescent light to provide a high light emission efficiency. The mechanism thereof is considered as follows. In the light emitting layer, when the excitation energy is formed through recombination of holes and electrons, the organic compounds contained in the light emitting layer are transferred from the ground state to the singlet excited state and the triplet exited state. The probabilities of the formation of the organic compounds in a singlet excited state (i.e., singlet excitons) and the organic compounds in a triplet excited state (i.e., triplet excitons) are statistically 25% far the singlet excitons and 75% for the triplet excitons. Among the excitons, the energy of the first organic compound and the second organic compound in the singlet excited state is transferred to the third organic compound, and the third organic compound in the ground state is transferred to the singlet excited state. The third organic compound thus in the singlet excited state emits fluorescent light on returning to the ground state. In the organic electroluminescent device of the invention at this time, the second organic compound in the triplet exited state undergoes inverse intersystem crossing to the singlet excited state since the second organic compound is a delayed fluorescent material, and the singlet excitation energy due to the inverse intersystem crossing is also transferred to the third organic compound. Accordingly, the energy of the second organic compound in the triplet excited state, which has a large existence probability, also contributes indirectly to the light emission, and thus the light emission efficiency of the organic electroluminescent device is significantly enhanced as compared to an organic electroluminescent device having a constitution that does not contain the second organic compound in the light emitting layer. In the organic electroluminescent device of the invention, the light emission occurs mainly from the third organic compound, and a part of the light emission may occur from the first organic compound and the second organic compound, or the light emission may partially occur therefrom. The light emission contains both fluorescent light and delayed fluorescent light. In the organic electroluminescent device of the invention, the kinds and the combinations of the first organic compound, the second organic compound, and the third organic compound, as far as the second organic compound is a delayed fluorescent material, and the third organic compound is a light emitting material. The organic electroluminescent device of the invention preferably satisfies the following expression (B) from the standpoint that a further higher light emission efficiency may be achieved thereby. ET1(A)>ET1(B) (B) In the expression (B), ET1(A) represents the lowest triplet excitation energy level at 77 K of the first organic compound; and ET1(B) represents the lowest triplet excitation energy level at 77 K of the second organic compound. The relationship between the lowest triplet excitation energy level at 77 K of the second organic compound ET1(B) and the lowest triplet excitation energy level at 77 K of the third organic compound ET1(C) is not particularly limited, and may be selected to satisfy the expression, ET1(B)>ET1(C). The invention will be described more specifically with reference to preferred examples below, but the scope of the invention is not construed as being limited to the following description based on the preferred examples. Second Organic Compound The delayed fluorescent material used as the second organic compound is not particularly limited, and is preferably a thermal activation type delayed fluorescent material undergoing inverse intersystem crossing from the singlet excited state to the triplet excited state through absorption of heat energy. The thermal activation type delayed fluorescent material relatively easily undergoes inverse intersystem crossing from the singlet excited state to the triplet excited state through absorption, of heat that is formed by the device, and can make the triplet excitation energy thereof contribute to the light emission efficiently. The delayed fluorescent material preferably has an energy difference ΔEstbetween the energy level ES1in the lowest singlet excited state and the energy level ES1in the lowest triplet excited state at 77 K of 0.3 eV or less, more preferably 0.2 eV or less, further preferably 0.1 eV or less, and still further preferably 0.08 eV or less. The delayed fluorescent material that has an energy difference ΔEstwithin the range relatively easily undergoes inverse intersystem crossing from the singlet excited state to the triplet excited state, and can make the triplet excitation energy thereof contribute to the light emission efficiently. The delayed fluorescent material used as the second organic compound is not particularly limited, as far as the compound is capable of emitting delayed fluorescent light, and for example, a compound represented by the following general formula (1) may be preferably used. wherein in the general formula (1), Ar1to Ar3each independently represent a substituted or unsubstituted aryl group, provided that at least one of Ar1to Ar3represents an aryl group substituted with a group represented by the following general formula (2): wherein in the general formula (2), R1to R8each independently represent a hydrogen atom or a substituent; Z represents O, S, O═C, or Ar4—N; Ar4represents a substituted or unsubstituted aryl group, in which R1and R2, R2and R3, R3and R4, R5and R6, R6and R7, and R7and R8each may be bonded to each other to form a cyclic structure. The aromatic ring constituting the aryl group represented by Ar1to Ar3in the general formula (1) may be a monocyclic ring or a condensed ring, and specific examples thereof include a benzene ring, a naphthalene ring, an anthracene ring, and a phenanthrene ring. The aryl group preferably has from 6 to 40 carbon atoms, more preferably from 6 to 20 carbon atoms, and further preferably from 6 to 14 carbon atoms. At least one of Ar1to Ar3represents an aryl group substituted with a group represented by the general formula (2). Two of Ar1to Ar3each may be an aryl group substituted with a group represented by the general formula (2), and three of them each may be an aryl group substituted with a group represented by the general formula (2). One aryl group may be substituted with two or more groups each represented by the general formula (2). For the descriptions and the preferred ranges of the substituent that is capable of being substituted on the aryl group represented by Ar1to Ar3, reference may be made to the descriptions and the preferred ranges of the substituent represented by R1to R8described later. In the general formula (2), R1to R8each independently represent a hydrogen atom or a substituent. All R1to R8may be hydrogen atoms. In the case where two or more thereof are substituents, the substituents may be the same as or different from each other. Examples of the substituent include a hydroxyl group, a halogen atom, a cyano group, an alkyl group having from 1 to 20 carbon atoms, an alkoxy group having from 1 to 20 carbon atoms, an alkylthio group having from 1 to 20 carbon atoms, an alkyl-substituted amino group having from 1 to 20 carbon atoms, an aryl-substituted amino group having from 12 to 40 carbon atoms, an acyl group having from 2 to 20 carbon atoms, an aryl group having from 6 to 40 carbon atoms, a heteroaryl group having from 3 to 40 carbon atoms, a substituted or unsubstituted carbazolyl group having from 12 to 40 carbon atoms, an alkenyl group having from 2 to 10 carbon atoms, an alkynyl group having from 2 to 10 carbon atoms, an alkoxycarbonyl group having from 2 to 10 carbon atoms, an alkylsulfonyl group having from 1 to 10 carbon atoms, a haloalkyl group having from 1 to 10 carbon atoms, an amide group, an alkylamide group having from 2 to 10 carbon atoms, a trialkylsilyl group having from 3 to 20 carbon atoms, a trialkylsilylalkyl group having from 4 to 20 carbon atoms, a trialkylsilylalkenyl group having from 5 to 20 carbon atoms, a trialkylsilylalkynyl group having from 5 to 20 carbon atoms, and a nitro group. In these specific examples, the substituent that is capable of being further substituted with a substituent may be substituted. More preferred examples of the substituent include a halogen atom, a cyano group, a substituted or unsubstituted alkyl group having from 1 to 20 carbon atoms, a substituted or unsubstituted alkoxy group having from 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having from 6 to 40 carbon atoms, a substituted or unsubstituted heteroaryl group having from 3 to 40 carbon atoms, a substituted or unsubstituted dialkylamino group having from 2 to 10 carbon atoms, a substituted or unsubstituted diarylamino group having from 12 to 40 carbon atoms, and a substituted or unsubstituted carbazolyl group having from 12 to 40 carbon atoms. Further preferred examples of the substituent include a fluorine atom, a chlorine atom, a cyano group, a substituted or unsubstituted alkyl group having from 1 to 10 carbon atoms, a substituted or unsubstituted alkoxy group having from 1 to 10 carbon atoms, a substituted or unsubstituted dialkylamino group having from 2 to 10 carbon atoms, a substituted or unsubstituted diarylamino group having from 12 to 40 carbon atoms, a substituted or unsubstituted aryl group having from 6 to 15 carbon atoms, and a substituted or unsubstituted heteroaryl group having from 3 to 12 carbon atoms. The alkyl group referred in the description herein may be linear, branched or cyclic, and more preferably has from 1 to 6 carbon atoms, and specific examples thereof include a methyl group, an ethyl group, a propyl group, a butyl group, a tert-butyl group, a pentyl group, a hexyl group, and an isopropyl group. The aryl group may be a monocyclic ring or a condensed ring, and specific examples thereof include a phenyl group and a naphthyl group. The alkoxy group may be linear, branched or cyclic, and more preferably has from 1 to 6 carbon atoms, and specific examples thereof include a methoxy group, an ethoxy group, a propoxy group, a butoxy group, a tert-butoxy group, a pentyloxy group, hexyloxy group, and an isopropoxy group. The two alkyl groups of the dialkylamino group may be the same as or different from each other, and are preferably the same as each other. The two alkyl groups of the dialkylamino group each Independently way be linear, branched or cyclic, and more preferably have front 1 to 6 carbon atoms, and specific examples thereof include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, and an isopropyl group. The two alkyl groups of the dialkylamino group may be bonded to form a cyclic structure along with the nitrogen atom of the amino group. The aryl group that may be used as the substituent may be a monocyclic ring or a fused ring, and specific examples thereof include a phenyl group and a naphthyl group. The heteroaryl group may be a monocyclic ring or a fused ring, and specific examples thereof include a pyridyl group, a pyridazyl group, a pyrimidyl group, a triazinyl group, a triazolyl group, and a benzotriazolyl group. The heteroaryl group may be a group that is bonded through the hetero atom or a group that is bonded through the carbon atom constituting the heteroaryl ring. Two aryl groups of the diarylamino group each may be a monocyclic ring or a fused ring, and specific examples thereof include a phenyl group and a naphthyl group. Two aryl groups, of the diarylamino group may be bonded to each other to form a cyclic structure along with the nitrogen atom of the amino group, and examples thereof include a 9-carbazolyl group. In the general formula (2), R1and R2, R2and R3, R3and R4, R5and R6, R6and R7, and R7and R8each may be bonded to each other to form a cyclic structure. The cyclic structure may be an aromatic ring or an aliphatic ring, and may contain a heteroatom. The hetero atom referred herein is preferably selected from a group consisting of a nitrogen atom, an oxygen atom, and a sulfur atom. Examples of the cyclic structure formed include a benzene ring, a naphthalene ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a pyrrole ring, an imidazole ring, a pyrazole ring, a triazole ring, an imidazoline ring, an oxazole ring, an isoxazole ring, a thiazole ring, an isothiazole ring, a cyclohexadiene ring, a cyclohexene ring, a cyclopentene ring, a cycloheptatriene ring, a cycloheptadiene ring, and a cycloheptene ring. In the general formula (2), Z represents O, S, O═C, or Ar4—N, and Ar4represents a substituted or unsubstituted aryl group. The aromatic ring constituting the aryl group represented by Ar4may be a monocyclic ring or a condensed ring, and specific examples thereof include a benzene ring, a naphthalene ring, an anthracene ring, and a phenanthrene ring. The aryl group preferably has from 6 to 40 carbon atoms, more preferably from 6 to 20 carbon atoms, and further preferably from 6 to 14 carbon atoms. For the descriptions and the preferred ranges of the substituent that is capable of being substituted on the aryl group represented by Ar4, reference may be made to the descriptions and the preferred ranges of the substituent that may be represented by R1to R8. The group represented by the general formula (2) is preferably a group represented by the following general formula (3), a group represented by the following general formula (4), or a group represented by the following general formula (5). In the general formulae (3) to (5), R1to R8each Independently represent a hydrogen atom or a substituent. For the descriptions and the preferred ranges of R1to R8, reference may be made to the corresponding descriptions in the general formula (2). R1and R2, R2and R3, R3and R4, R5and R6, R6and R7, and R7and R8may be bonded to each other to form a cyclic structure. In the general formula (2), in the case where Z represents Ar4—N, the compound represented by the general formula (1) particularly encompasses the structure represented by the following general formula (6): In the general formula (6), Ar2, Ar3, Ar2′, and Ar3′each independently represent a substituted or unsubstituted aryl group; Ar5and Ar5′each independently represent a substituted or unsubstituted arylene group; and R1to R8each independently represent a hydrogen atom or a substituent, in which R1and R2, R2and R3, R3and R4, R5and R6, R6and R7, and R7and R8may be bonded to each other to form a cyclic structure. For the descriptions and the preferred ranges of Ar2, Ar3, Ar2′, and Ar3′in the general formula (6), reference may be made to the descriptions and the preferred ranges of Ar1to Ar3in the general formula (1). The aromatic ring constituting the arylene group represented by Ar5and Ar5′in the general formula (6) may be a monocyclic ring or a condensed ring, and specific examples thereof include a benzene ring, a naphthalene ring, an anthracene ring, and a phenanthrene ring. The arylene group preferably has from 6 to 40 carbon atoms, more preferably from 6 to 20 carbon atoms, and further preferably from 6 to 14 carbon atoms. For the descriptions and the preferred ranges of R1to R8in the general formula (6), reference may be made to the descriptions and the preferred ranges of R1to R8in the general formula (2). In the compound represented by the general formula (6), the compound, in which Ar2and Ar2′are the same as each other, Ar3and Ar3′are the same as each other, and Ar5and Ar5′are the same as each other, has such an advantage that the compound may be easily synthesized. The compound represented by the general formula (1) preferably has a structure represented by the following general formula (7): In the general formula (7), at least one of R11to R25represents a group represented by the general formula (2); and the other thereof each independently represent a hydrogen atom or a substituent other than a substituent represented by the general formula (2). In the general formula (7), at least one of R11to R25represents a group represented toy the general formula (2), and the number of the substituent represented by the general formula (2) is preferably from 1 to 9, and more preferably from 1 to 6, among R11to R25. For example, the number of the substituent, may be selected from a range of from 1 to 3. The group represented by the general formula (2) may be bonded to each of the three benzene rings bonded to the 1,3,5-triazine ring, or may be only one or two benzene rings. Preferred examples thereof include a case where the three benzene rings each have from 0 to 3 of the substituent represented by the general formula (2), and more preferred examples thereof include a case where the three ten zone rings each have from 0 to 2 of the substituent represented by the general formula (2). For example, a case where the three benzene rings each have 0 or 1 of the substituent represented by the general formula (2) may be selected. The substitution position of the group represented by the general formula (2) may be any one of R11to R25, and the substitution position is preferably selected from R12to R14, R17to R19, and R22to R24. Examples thereof include a case where from 0 to 2 of R12to R14, from 0 to 2 of R17to R19, and from 0 to 2 of R22to R24each represent the substituent represented by the general formula (2), and a case where 0 or 1 of R12to R14, 0 or 1 of R17to R19, and 0 or 1 of R22to R24each represent the substituent represented by the general formula (2). In the case where any one of R11to R25is substituted by the substituent represented by the general formula (2), the substitution position, thereof is preferably R12or R13. In the case where any two of R11to R25are substituted by the substituent represented by the general formula (2), the substitution positions thereof are preferably R12and R14, or any one of R12and R13and any one of R17and R18. In the case where any three of R11to R25are substituted by the substituent represented by the general formula (2), the substitution positions thereof are preferably R12, R14, and any one of R17and R18, or any one of R12and R13, any one of R17and R18, and any one of R22and R23. Among R11to R25, ones that do not represent the substituent represented by the general formula (2) each independently represent a hydrogen atom or a substituent other than a substituent represented by the general formula (2), and may be all hydrogen atoms. In the case where two or more of them are the substituents, the substituents may be different from each other. For the descriptions and the preferred ranges of the substituent that may be represented by R11to R25, reference may be made to the descriptions and the preferred ranges of the substituent that way be represented by R1to R8. In the general formula (7), R11and R12, R12and R13, R13and R14, R14and R15, R16and R17, R17and R18, R18and R19, R19and R20, R21and R22, R22and R23, R23and R24, and R24and R25each may be bonded to each other to form a cyclic structure. For the descriptions and the preferred ranges of the cyclic structure, reference may be made to the corresponding descriptions in the general formula (2). The group represented by the general formula (2) contained In the general formula (7) is preferably a group having a structure represented by the general formula (3), a group having a structure represented by the general formula (4), or a group having a structure represented by the general formula (5). The compound represented by the general formula (7) preferably has a symmetric molecular structure. For example, the compound preferably has a rotation symmetric structure with the center of the triazine ring as the axis. In this case, in the general formula (7), R11, R16, and R21are the same as each other, R12, R17, and R22are the same as each other, R13, R18, and R23are the same as each other, R14, R19, and R24are the same as each other, and R15, R20, and R25are the same as each other. Examples of the compound in this case include the compound, in which R13, R18and R23are the groups represented by the general formula (2), and the others are hydrogen atoms. In the general formula (2), in the case where Z represents Ar4—N, the compound represented by the general formula (7) particularly encompasses the structure represented by the following general formula (8): In the general formula (8), R1to R8, R11, R12, R14to R25, R11′, R12′, and R14′are R25′each independently represent a hydrogen atom or a substituent. For the descriptions and the preferred ranges of R1to R8in the general formula (8), reference may be made to the descriptions and the preferred ranges of R1to R8in the general formula (2). For the descriptions and the preferred ranges of R11, R12, R14to R25, R11′, R12′, and R14′are R25′in the general formula (8), reference may be made to the descriptions and the preferred ranges of R11to R25in the general formula (7). In the general formula (8), R1and R2, R2and R3, R3and R4, R5and R6, R6and R7, R7and R8, R11and R12, R14and R15, R16and R17, R17and R18, R18and R19, R19and R20, R21and R22, R22and R23, R23and R24, R24and R25, R11′and R12′, R14′and R15′, R16′and R17′, R17′and R18′, R18′and R19′, R19′and R20′, R21′and R22′, R22′and R23′, R23′and R24′, and R24′and R25′each may be bended to each other to form a cyclic structure. For the descriptions and the preferred ranges of the cyclic structure, reference may be made to the corresponding descriptions in the general formula (2). Specific examples of the compound represented by the general formula (1) shown below. However, the compound represented by the general formula (1) capable of being used in the invention is not construed as being limited to the specific examples. A compound represented by the following general formula (9) may be preferably used as the delayed fluorescent material used as the second organic compound. In the general formula (9), X represents an oxygen atom, a sulfur atom, or a nitrogen atom (in which a hydrogen atom or a substituent is bonded to the nitrogen atom, and the substituent is preferably an alkyl group having from 1 to 10 carbon atoms or an aryl group having from 6 to 14 aryl group); and R1to R8each independently represent a hydrogen atom or a substituent, provided that at least one of R1to R8each independently represent a group represented by any one of the general formulae (10) to (14). X may be an oxygen atom or a sulfur atom, and is preferably an oxygen atom. The number, of the group represented by any one of the general formulae (10) to (14) among R1to R8may be only 1 or 2 or more, and is preferably from 1 to 4, and more preferably 1 or 2. In the case where plural groups each represented by any one of the general formulae (10) to (14) are present in the general formula (9), the groups may be the same as or different from each other. In the case where only one of R1to R8is the group represented by any one of the general formulae (10) to (14), R2or R3is preferably the group represented by any one of the general formulae (10) to (14), and R3is more preferably the group represented by any one of the general formulae (10) to (14). In the case where two or more of the R1to R8each are the group represented by any one of the general formulae (10) to (14), at least one of R1to R4and at least one of R5to R8each are preferably the group represented by any one of the general formulae (10) to (14). In this case, the groups represented by any one of the general formulae (10) to (14) are preferably from 1 to 3 of R1to R4and from 1 to 3 of R5to R8, and more preferably 1 or 2 of R1to R4and 1 or 2 of R5to R8. The number of the group represented by any one of the general formulae (10) to (14) among R1to R4and the number of the group represented by any one of the general formulae (10) to (14) among R5to R6may be the same as or different from each other, and are preferably the same as each other. In R1to R4, it is preferred that at least one of R2to R4is the group represented by any one of the general formulae (10) to (14), and it is more preferred that at least R3is the group represented by any one of the general formulae (10) to (14). In R5to R6, it is preferred that at least one of R5to R7is the group represented by any one of the general formulae (10) to (14), and it is more preferred that at least R6is the group represented by any one of the general formulae (10) to (14). Preferred examples of the compound include the compound represented by the general formula (9), in which R3and R6each represent the group represented by any one of the general formulae (10) to (14), the compound represented by the general formula (9), in which R2and R7each represent the group represented by any one of the general formulae (10) to (14), and the compound represented by the general formula (9), in which R2, R3, R6and R7each represent the group represented by any one of the general formulae (10) to (14), and more preferred examples of the compound include the compound represented by the general formula (9), in which R3and R6each represent the group represented by any one of the general formulae (10) to (14). The plural groups each represented by any one of the general formulae (10) to (14) present in the general formula (9) may be the same as or different from each other, and are preferably the same as each other. The compound represented by the general formula (9) preferably has a symmetric structure. Specifically, R1and R8, R2and R7, R3and R6, and R4and R5each are preferably the same as each other. In the compound represented by the general formula (9), both R3and R6are preferably the groups represented by any one of the general formulae (10) to (14). Preferred examples of the compound include a compound represented by the general formula (9), in which at least one of R3and R6is the groups represented by any one of the general formulae (10) to (14). In the general formulae (10) to (14), L20, L30, L40, L50and L60each independently represent a single bond or a divalent linking group; and R21to R28, R31to R38, R3a, R3b, R41to R48, R4a, R51to R58, and R61to R68each independently represent a hydrogen atom or a substituent. L20, L30, L40, L50and L60each may represent a single bond or a divalent linking group, and preferably represent a single bond. In the case where at least one of R1to R8in the general formula (9) each represent the group represented by any one of the general formulae (10) to (14), wherein L20, L30, L40, L50and L60each represent a linking group, the number of the linking group present in the general formula (9) may be only 1 or may be 2 or more. In the case where the general formula (9) contains plural linking groups, the linking groups may be the same as or different from each other. Examples of the divalent linking group that may be represented by L20, L30, L40, L50and L60include an alkenylene group, an alkynylene group, an arylene group, a thiophendiyl group, and a linking group formed of a combination of these groups. The alkylene group and the alkenylene group each preferably have from 2 to 10 carbon atoms, more preferably from 2 to 6 carbon atoms, and further preferably from 2 to 4 carbon atoms. The arylene group preferably has from 6 to 10 carbon atoms, and more preferably 6 carbon atoms, and a p-phenylene group is further preferred. Examples of the thiophendiyl group include a 3,4-thiophendiyl group and 2,5-thiophendiyl group. Preferred examples of the linking group include a linking group represented by the general formula —(CRa═CRb)n—. In the general formula, Raand Rbeach independently represent a hydrogen atom or an alkyl group. The alkyl group preferably has from 1 to 6 carbon atoms, and more preferably from 1 to 3 carbon atoms. n is preferably from 1 to 6, more preferably from 1 to 3, and further preferably 1 or 2. Examples thereof include —CH═CH— and —(CH═CH)2—. The number of a substituent in the general formulae (10) to (14) is not particularly limited. In each of the general formulae (10) to (14), all R21to R28, R31to R38, R3a, R3b, R41to R48, R4a, R51to R58, and R61to R68each may be unsubstituted (i.e., a hydrogen atom), it is preferred that at least one of R21to R28, R31to R38, R41to R48, R51to R58, and R61to R68each represent a substituent, and it is more preferred that at least one of R23, R26, R33, R36, R43, R46, R53, R56, R63and R66each represents a substituent. In the case where the general formulae (10) to (14) contain plural substituents, the substituents may be the same as or different from each other. Examples of the substituent that may be represented by R21to R28, R31to R38, R3a, R3b, R41to R48, R4a, R51to R58, and R61to R68and the substituent that may be represented by R1to R8include a hydroxyl group, a halogen atom, a cyano group, an alkyl group having from 1 to 20 carbon atoms, an alkoxy group having from 1 to 20 carbon atoms, an alkylthio group having from 1 to 20 carbon atoms, an alkyl-substituted amino group having from 1 to 20 carbon atoms, an acyl group having from 2 to 20 carbon atoms, an aryl group having from 6 to 40 carbon atoms, a heteroaryl group having from 3 to 40 carbon atoms, an alkenyl group having from 2 to 10 carbon atoms, an alkynyl group having from 2 to 10 carbon atoms, an alkoxycarbonyl group having from 2 to 10 carbon atoms, an alkylsulfonyl group having from 1 to 10 carbon atoms, a haloalkyl group having from 1 to 10 carbon atoms, an amide group, an alkylamide group having from 2 to 10 carbon atoms, a trialkylsilyl group having from 3 to 20 carbon atoms, a trialkylsilylalkyl group having from 4 to 20 carbon atoms, a trialkylsilylalkenyl group having from 5 to 20 carbon atoms, a trialkylsilylalkynyl group having from 5 to 20 carbon atoms, and a nitro group. In these specific examples, the substituent that is capable of being further substituted with a substituent may be substituted. More preferred examples of the substituent include a halogen atom, a cyano group, a substituted or unsubstituted alkyl group having from 1 to 20 carbon atoms, an alkoxy group having from 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having from 6 to 40 carbon atoms, a substituted or unsubstituted heteroaryl group having from 3 to 40 carbon atoms, and a dialkyl-substituted amino group having from 1 to 20 carbon atoms. Further preferred examples of the substituent include a fluorine atom, a chlorine atom, a cyano group, a substituted or unsubstituted alkyl group having from 1 to 10 carbon atoms, a substituted or unsubstituted alkoxy group having from 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having from 6 to 15 carbon atoms, and a substituted or unsubstituted heteroaryl group having from 3 to 12 carbon atoms. At least one of R23, R26, R33, R36, R43, R46, R53, R56, R63and R66each preferably Independently represent the group represented by any one of the general formulae (10) to (14). R1and R2, R2and R3, R3and R4, R5and R6, R6and R7, and R7and R8, R21and R22, R22and R23, R23and R24, R24and R25, R25and R26, R26and R27, R27and R28, R31and R32, R32and R33, R33and R34, R35and R36, R36and R37, R37and R38, R3aand R3b, R41and R42, R42and R43, R43and R44, R45and R46, R46and R47, R47and R48, R51and R52, R52and R53, R53and R54, R55and R56, R56and R57, R57and R58, R61and R62, R62and R63, R63and R64, R64and R65, R66and R67, and R67and R68each may be bended to each other to form a cyclic structure. The cyclic structure may be an aromatic ring or an aliphatic ring, and may contain a hetero atom, and the cyclic structure may be a condensed ring containing two or more rings. The hetero atom referred herein Is preferably selected from the group consisting of a nitrogen atom, an oxygen atom and a sulfur atom. Examples of the cyclic structure formed include a benzene ring, a naphthalene ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a pyrrole ring, an imidazole ring, a pyrazole ring, a triazole ring, an imidazoline ring, an oxazole ring, an isoxazole ring, a thiazole ring, an isothiazole ring, a cyclohexadiene ring, a cyclohexene ring, a cyclopentene ring, a cycloheptatriene ring, a cycloheptadiene ring, and a cycloheptene ring. Specific examples of the compound represented by the general formula (9) shown below. However, the compound represented by the general formula (9) capable of being used in the invention is not construed as being limited to the specific examples. As the second organic compound, the following light emitting material capable of emitting delayed fluorescent light is also preferably used. Preferred examples of the light emitting material include compounds represented by the following general formula (101). The entire description of WO 2013/154064 including the paragraphs 0008 to 0048 and 0095 to 0133 is incorporated herein by reference. wherein in the general formula (101), at least one of R1to R5represents a cyano group, at least one of R1to R5represents a group represented by the following general formula (111), and the balance of R1to R5each represent a hydrogen atom or a substituent, wherein in the general formula (111), R21to R28each independently represent a hydrogen atom or a substituent, provided that at least one of the following conditions (A) and (B) is satisfied:(A) R25and R26together form a single bond, and(B) R27and R28together represent, an atomic group that is necessary for forming a substituted or unsubstituted benzene ring. In the general formula (101), at least one of R1to R5preferably represents a group represented by any one of the following general formulae (112) to (115). wherein in the general formula (112), R31to R38each independently represent a hydrogen atom or a substituent, wherein in the general formula (113), R41to R46each independently represent a hydrogen atom or a substituent, wherein in the general formula (114), R41to R46each independently represent a hydrogen atom or a substituent, wherein in the general formula (115), R71to R80each independently represent a hydrogen atom or a substituent. Specific examples of the compounds include the compounds shown in the following tables. In the case where two or more groups represented by any one of the general formulae (112) to (115) are present In the molecule of the following example compounds, all the groups have the same structure. The formulae (121) to (124) in the tables represent the following formulae, respectively, and n represents the number of the repeating units. TABLE 1-1CompoundGeneral formula (1)General formula (112)No.R1R2R3R4R5R31, R38R32, R37R33, R36R34, R351GeneralGeneralCNGeneralGeneralHHHHformula (112)formula (112)formula (112)formula (112)2GeneralGeneralCNGeneralGeneralHCH3HHformula (112)formula (112)formula (112)formula (112)3GeneralGeneralCNGeneralGeneralHCH3OHHformula (112)formula (112)formula (112)formula (112)4GeneralGeneralCNGeneralGeneralHHCH3Hformula (112)formula (112)formula (112)formula (112)5GeneralGeneralCNGeneralGeneralHHCH3OHformula (112)formula (112)formula (112)formula (112)6GeneralGeneralCNGeneralGeneralHHt-C4H9Hformula (112)formula (112)formula (112)formula (112)7GeneralGeneralCNGeneralGeneralHHClHformula (112)formula (112)formula (112)formula (112)8GeneralGeneralCNGeneralGeneralHHFHformula (112)formula (112)formula (112)formula (112)9GeneralGeneralCNGeneralGeneralHHHCH3formula (112)formula (112)formula (112)formula (112)10GeneralGeneralCNGeneralGeneralHHHCH3Oformula (112)formula (112)formula (112)formula (112)11GeneralGeneralCNGeneralHHHHHformula (112)formula (112)formula (112)12GeneralGeneralCNGeneralHHCH3HHformula (112)formula (112)formula (112)13GeneralGeneralCNGeneralHHCH3OHHformula (112)formula (112)formula (112)14GeneralGeneralCNGeneralHHHCH3Hformula (112)formula (112)formula (112)15GeneralGeneralCNGeneralHHHCH3OHformula (112)formula (112)formula (112)16GeneralGeneralCNGeneralHHHt-C4H9Hformula (112)formula (112)formula (112)17GeneralGeneralCNGeneralHHHClHformula (112)formula (112)formula (112)18GeneralGeneralCNGeneralHHHFHformula (112)formula (112)formula (112)19GeneralGeneralCNGeneralHHHHCH3formula (112)formula (112)formula (112)20GeneralGeneralCNGeneralHHHHCH3Oformula (112)formula (112)formula (112)21GeneralGeneralCNHHHHHHformula (112)formula (112)22GeneralGeneralCNHHHCH3HHformula (112)formula (112)23GeneralGeneralCNHHHCH3OHHformula (112)formula (112)24GeneralGeneralCNHHHHCH3Hformula (112)formula (112)25GeneralGeneralCNHHHHCH3OHformula (112)formula (112)26GeneralGeneralCNHHHHt-C4H9Hformula (112)formula (112)27GeneralGeneralCNHHHHClHformula (112)formula (112)28GeneralGeneralCNHHHHFHformula (112)formula (112)29GeneralGeneralCNHHHHHCH3formula (112)formula (112)30GeneralGeneralCNHHHHHCH3Oformula (112)formula (112)31GeneralHCNGeneralHHHHHformula (112)formula (112)32GeneralHCNGeneralHHCH3HHformula (112)formula (112)33GeneralHCNGeneralHHCH3OHHformula (112)formula (112)34GeneralHCNGeneralHHHCH3Hformula (112)formula (112)35GeneralHCNGeneralHHHCH3OHformula (112)formula (112)36GeneralHCNGeneralHHHt-C4H9Hformula (112)formula (112)37GeneralHCNGeneralHHHClHformula (112)formula (112)38GeneralHCNGeneralHHHFHformula (112)formula (112)39GeneralHCNGeneralHHHHCH3formula (112)formula (112)40GeneralHCNGeneralHHHHCH3Oformula (112)formula (112)41GeneralHCNHGeneralHHHHformula (112)formula (112)42GeneralHCNHGeneralHCH3HHformula (112)formula (112)43GeneralHCNHGeneralHCH3OHHformula (112)formula (112)44GeneralHCNHGeneralHHCH3Hformula (112)formula (112)45GeneralHCNHGeneralHHCH3OHformula (112)formula (112)46GeneralHCNHGeneralHHt-C4H9Hformula (112)formula (112)47GeneralHCNHGeneralHHClHformula (112)formula (112)48GeneralHCNHGeneralHHFHformula (112)formula (112)49GeneralHCNHGeneralHHHCH3formula (112)formula (112)50GeneralHCNHGeneralHHHCH3Oformula (112)formula (112)51GeneralHCNHHHHHHformula (112)52GeneralHCNHHHCH3HHformula (112)53GeneralHCNHHHCH3OHHformula (112)54GeneralHCNHHHHCH3Hformula (112)55GeneralHCNHHHHCH3OHformula (112)56GeneralHCNHHHHt-C4H9Hformula (112)57GeneralHCNHHHHClHformula (112)58GeneralHCNHHHHFHformula (112)59GeneralHCNHHHHHCH3formula (112)60GeneralHCNHHHHHCH3Oformula (112) TABLE 1-2CompoundGeneral formula (1)General formula (112)No.R1R2R3R4R5R31, R38R32, R37R33, R36R34, R3561GeneralGeneralCNGeneralFHHHHformula (112)formula (112)formula (112)62GeneralGeneralCNGeneralFHCH3HHformula (112)formula (112)formula (112)63GeneralGeneralCNGeneralFHCH3OHHformula (112)formula (112)formula (112)64GeneralGeneralCNGeneralFHHCH3Hformula (112)formula (112)formula (112)65GeneralGeneralCNGeneralFHHCH3OHformula (112)formula (112)formula (112)66GeneralGeneralCNGeneralFHHt-C4H9Hformula (112)formula (112)formula (112)67GeneralGeneralCNGeneralFHHClHformula (112)formula (112)formula (112)68GeneralGeneralCNGeneralFHHFHformula (112)formula (112)formula (112)69GeneralGeneralCNGeneralFHHHCH3formula (112)formula (112)formula (112)70GeneralGeneralCNGeneralFHHHCH3Oformula (112)formula (112)formula (112)71GeneralGeneralCNFFHHHHformula (112)formula (112)72GeneralGeneralCNFFHCH3HHformula (112)formula (112)73GeneralGeneralCNFFHCH3OHHformula (112)formula (112)74GeneralGeneralCNFFHHCH3Hformula (112)formula (112)75GeneralGeneralCNFFHHCH3OHformula (112)formula (112)76GeneralGeneralCNFFHHt-C4H9Hformula (112)formula (112)77GeneralGeneralCNFFHHClHformula (112)formula (112)78GeneralGeneralCNFFHHFHformula (112)formula (112)79GeneralGeneralCNFFHHHCH3formula (112)formula (112)80GeneralGeneralCNFFHHHCH3Oformula (112)formula (112)81GeneralFCNGeneralFHHHHformula (112)formula (112)82GeneralFCNGeneralFHCH3HHformula (112)formula (112)83GeneralFCNGeneralFHCH3OHHformula (112)formula (112)84GeneralFCNGeneralFHHCH3Hformula (112)formula (112)85GeneralFCNGeneralFHHCH3OHformula (112)formula (112)86GeneralFCNGeneralFHHt-C4H9Hformula (112)formula (112)87GeneralFCNGeneralFHHClHformula (112)formula (112)88GeneralFCNGeneralFHHFHformula (112)formula (112)89GeneralFCNGeneralFHHHCH3formula (112)formula (112)90GeneralFCNGeneralFHHHCH3Oformula (112)formula (112)91GeneralFCNFGeneralHHHHformula (112)formula (112)92GeneralFCNFGeneralHCH3HHformula (112)formula (112)93GeneralFCNFGeneralHCH3OHHformula (112)formula (112)94GeneralFCNFGeneralHHCH3Hformula (112)formula (112)95GeneralFCNFGeneralHHCH3OHformula (112)formula (112)96GeneralFCNFGeneralHHt-C4H9Hformula (112)formula (112)97GeneralFCNFGeneralHHClHformula (112)formula (112)98GeneralFCNFGeneralHHFHformula (112)formula (112)99GeneralFCNFGeneralHHHCH3formula (112)formula (112)100GeneralFCNFGeneralHHHCH3Oformula (112)formula (112)101GeneralFCNFFHHHHformula (112)102GeneralFCNFFHCH3HHformula (112)103GeneralFCNFFHCH3OHHformula (112)104GeneralFCNFFHHCH3Hformula (112)105GeneralFCNFFHHCH3OHformula (112)106GeneralFCNFFHHt-C4H9Hformula (112)107GeneralFCNFFHHClHformula (112)108GeneralFCNFFHHFHformula (112)109GeneralFCNFFHHHCH3formula (112)110GeneralFCNFFHHHCH3Oformula (112)111GeneralGeneralCNGeneralOHHHHHformula (112)formula (112)formula (112)112GeneralGeneralCNGeneralOHHCH3HHformula (112)formula (112)formula (112)113GeneralGeneralCNGeneralOHHCH3OHHformula (112)formula (112)formula (112)114GeneralGeneralCNGeneralOHHHCH3Hformula (112)formula (112)formula (112)115GeneralGeneralCNGeneralOHHHCH3OHformula (112)formula (112)formula (112)116GeneralGeneralCNGeneralOHHHt-C4H9Hformula (112)formula (112)formula (112)117GeneralGeneralCNGeneralOHHHClHformula (112)formula (112)formula (112)118GeneralGeneralCNGeneralOHHHFHformula (112)formula (112)formula (112)119GeneralGeneralCNGeneralOHHHHCH3formula (112)formula (112)formula (112)120GeneralGeneralCNGeneralOHHHHCH3Oformula (112)formula (112)formula (112) TABLE 1-3CompoundGeneral formula (1)General formula (112)No.R1R2R3R4R5R31, R38R32, R37R33, R36R34, R35121GeneralGeneralCNOHOHHHHHformula (112)formula (112)122GeneralGeneralCNOHOHHCH3HHformula (112)formula (112)123GeneralGeneralCNOHOHHCH3OHHformula (112)formula (112)124GeneralGeneralCNOHOHHHCH3Hformula (112)formula (112)125GeneralGeneralCNOHOHHHCH3OHformula (112)formula (112)126GeneralGeneralCNOHOHHHt-C4H9Hformula (112)formula (112)127GeneralGeneralCNOHOHHHClHformula (112)formula (112)128GeneralGeneralCNOHOHHHFHformula (112)formula (112)129GeneralGeneralCNOHOHHHHCH3formula (112)formula (112)130GeneralGeneralCNOHOHHHHCH3Oformula (112)formula (112)131GeneralOHCNGeneralOHHHHHformula (112)formula (112)132GeneralOHCNGeneralOHHCH3HHformula (112)formula (112)133GeneralOHCNGeneralOHHCH3OHHformula (112)formula (112)134GeneralOHCNGeneralOHHHCH3Hformula (112)formula (112)135GeneralOHCNGeneralOHHHCH3OHformula (112)formula (112)136GeneralOHCNGeneralOHHHt-C4H9Hformula (112)formula (112)137GeneralOHCNGeneralOHHHClHformula (112)formula (112)138GeneralOHCNGeneralOHHHFHformula (112)formula (112)139GeneralOHCNGeneralOHHHHCH3formula (112)formula (112)140GeneralOHCNGeneralOHHHHCH3Oformula (112)formula (112)141GeneralOHCNOHGeneralHHHHformula (112)formula (112)142GeneralOHCNOHGeneralHCH3HHformula (112)formula (112)143GeneralOHCNOHGeneralHCH3OHHformula (112)formula (112)144GeneralOHCNOHGeneralHHCH3Hformula (112)formula (112)145GeneralOHCNOHGeneralHHCH3OHformula (112)formula (112)146GeneralOHCNOHGeneralHHt-C4H9Hformula (112)formula (112)147GeneralOHCNOHGeneralHHClHformula (112)formula (112)148GeneralOHCNOHGeneralHHFHformula (112)formula (112)149GeneralOHCNOHGeneralHHHCH3formula (112)formula (112)150GeneralOHCNOHGeneralHHHCH3Oformula (112)formula (112)151GeneralOHCNOHOHHHHHformula (112)152GeneralOHCNOHOHHCH3HHformula (112)153GeneralOHCNOHOHHCH3OHHformula (112)154GeneralOHCNOHOHHHCH3Hformula (112)155GeneralOHCNOHOHHHCH3OHformula (112)156GeneralOHCNOHOHHHt-C4H9Hformula (112)157GeneralOHCNOHOHHHClHformula (112)158GeneralOHCNOHOHHHFHformula (112)159GeneralOHCNOHOHHHHCH3formula (112)160GeneralOHCNOHOHHHHCH3Oformula (112)161GeneralGeneralCNGeneralClHHHHformula (112)formula (112)formula (112)162GeneralGeneralCNGeneralClHCH3HHformula (112)formula (112)formula (112)163GeneralGeneralCNGeneralClHCH3OHHformula (112)formula (112)formula (112)164GeneralGeneralCNGeneralClHHCH3Hformula (112)formula (112)formula (112)165GeneralGeneralCNGeneralClHHCH3OHformula (112)formula (112)formula (112)166GeneralGeneralCNGeneralClHHt-C4H9Hformula (112)formula (112)formula (112)167GeneralGeneralCNGeneralClHHClHformula (112)formula (112)formula (112)168GeneralGeneralCNGeneralClHHFHformula (112)formula (112)formula (112)169GeneralGeneralCNGeneralClHHHCH3formula (112)formula (112)formula (112)170GeneralGeneralCNGeneralClHHHCH3Oformula (112)formula (112)formula (112)171GeneralGeneralCNGeneralFHHHHformula (112)formula (112)formula (112)172GeneralGeneralCNGeneralFHCH3HHformula (112)formula (112)formula (112)173GeneralGeneralCNGeneralFHCH3OHHformula (112)formula (112)formula (112)174GeneralGeneralCNGeneralFHHCH3Hformula (112)formula (112)formula (112)175GeneralGeneralCNGeneralFHHCH3OHformula (112)formula (112)formula (112)176GeneralGeneralCNGeneralFHHt-C4H9Hformula (112)formula (112)formula (112)177GeneralGeneralCNGeneralFHHClHformula (112)formula (112)formula (112)178GeneralGeneralCNGeneralFHHFHformula (112)formula (112)formula (112)179GeneralGeneralCNGeneralFHHHCH3formula (112)formula (112)formula (112)180GeneralGeneralCNGeneralFHHHCH3Oformula (112)formula (112)formula (112) TABLE 1-4CompoundGeneral formula (1)General formula (112)No.R1R2R3R4R5R31, R38R32, R37R33, R36R34, R35181GeneralGeneralCNGeneralCH3OHHHHformula (112)formula (112)formula (112)182GeneralGeneralCNGeneralCH3OHCH3HHformula (112)formula (112)formula (112)183GeneralGeneralCNGeneralCH3OHCH3OHHformula (112)formula (112)formula (112)184GeneralGeneralCNGeneralCH3OHHCH3Hformula (112)formula (112)formula (112)185GeneralGeneralCNGeneralCH3OHHCH3OHformula (112)formula (112)formula (112)186GeneralGeneralCNGeneralCH3OHHt-C4H9Hformula (112)formula (112)formula (112)187GeneralGeneralCNGeneralCH3OHHClHformula (112)formula (112)formula (112)188GeneralGeneralCNGeneralCH3OHHFHformula (112)formula (112)formula (112)189GeneralGeneralCNGeneralC2H5OHHHCH3formula (112)formula (112)formula (112)190GeneralGeneralCNGeneralC2H5OHHHCH3Oformula (112)formula (112)formula (112)191GeneralGeneralCNGeneralC2H5OHHHHformula (112)formula (112)formula (112)192GeneralGeneralCNGeneralC2H5OHCH3HHformula (112)formula (112)formula (112)193GeneralGeneralCNGeneralC2H5OHCH3OHHformula (112)formula (112)formula (112)194GeneralGeneralCNGeneralC2H5OHHCH3Hformula (112)formula (112)formula (112)195GeneralGeneralCNGeneralC2H5OHHCH3OHformula (112)formula (112)formula (112)196GeneralGeneralCNGeneralC2H5OHHt-C4H9Hformula (112)formula (112)formula (112)197GeneralGeneralCNGeneralC2H5OHHClHformula (112)formula (112)formula (112)198GeneralGeneralCNGeneralC2H5OHHFHformula (112)formula (112)formula (112)199GeneralGeneralCNGeneralC2H5OHHHCH3formula (112)formula (112)formula (112)200GeneralGeneralCNGeneralC2H5OHHHCH3Oformula (112)formula (112)formula (112)201GeneralGeneralCNGeneralC6H5OHHHHformula (112)formula (112)formula (112)202GeneralGeneralCNGeneralC6H5OHCH3HHformula (112)formula (112)formula (112)203GeneralGeneralCNGeneralC6H5OHCH3OHHformula (112)formula (112)formula (112)204GeneralGeneralCNGeneralC6H5OHHCH3Hformula (112)formula (112)formula (112)205GeneralGeneralCNGeneralC6H5OHHCH3OHformula (112)formula (112)formula (112)206GeneralGeneralCNGeneralC6H5OHHt-C4H9Hformula (112)formula (112)formula (112)207GeneralGeneralCNGeneralC6H5OHHClHformula (112)formula (112)formula (112)208GeneralGeneralCNGeneralC6H5OHHFHformula (112)formula (112)formula (112)209GeneralGeneralCNGeneralC6H5OHHHCH3formula (112)formula (112)formula (112)210GeneralGeneralCNGeneralC6H5OHHHCH3Oformula (112)formula (112)formula (112)211GeneralGeneralCNGeneralFormula (121)HHHHformula (112)formula (112)formula (112)212GeneralGeneralCNGeneralFormula (121)HCH3HHformula (112)formula (112)formula (112)213GeneralGeneralCNGeneralFormula (121)HCH3OHHformula (112)formula (112)formula (112)214GeneralGeneralCNGeneralFormula (121)HHCH3Hformula (112)formula (112)formula (112)215GeneralGeneralCNGeneralFormula (121)HHCH3OHformula (112)formula (112)formula (112)216GeneralGeneralCNGeneralFormula (121)HHt-C4H9Hformula (112)formula (112)formula (112)217GeneralGeneralCNGeneralFormula (121)HHClHformula (112)formula (112)formula (112)218GeneralGeneralCNGeneralFormula (121)HHFHformula (112)formula (112)formula (112)219GeneralGeneralCNGeneralFormula (121)HHHCH3formula (112)formula (112)formula (112)220GeneralGeneralCNGeneralFormula (121)HHHCH3Oformula (112)formula (112)formula (112)221GeneralGeneralCNGeneralFormula (122)HHHHformula (112)formula (112)formula (112)222GeneralGeneralCNGeneralFormula (122)HCH3HHformula (112)formula (112)formula (112)223GeneralGeneralCNGeneralFormula (122)HCH3OHHformula (112)formula (112)formula (112)224GeneralGeneralCNGeneralFormula (122)HHCH3Hformula (112)formula (112)formula (112)225GeneralGeneralCNGeneralFormula (122)HHCH3OHformula (112)formula (112)formula (112)226GeneralGeneralCNGeneralFormula (122)HHt-C4H9Hformula (112)formula (112)formula (112)227GeneralGeneralCNGeneralFormula (122)HHClHformula (112)formula (112)formula (112)228GeneralGeneralCNGeneralFormula (122)HHFHformula (112)formula (112)formula (112)229GeneralGeneralCNGeneralFormula (122)HHHCH3formula (112)formula (112)formula (112)230GeneralGeneralCNGeneralFormula (122)HHHCH3Oformula (112)formula (112)formula (112)231GeneralGeneralCNGeneralFormula (123)HHHHformula (112)formula (112)formula (112)232GeneralGeneralCNGeneralFormula (123)HCH3HHformula (112)formula (112)formula (112)233GeneralGeneralCNGeneralFormula (123)HCH3OHHformula (112)formula (112)formula (112)234GeneralGeneralCNGeneralFormula (123)HHCH3Hformula (112)formula (112)formula (112)235GeneralGeneralCNGeneralFormula (123)HHCH3OHformula (112)formula (112)formula (112)236GeneralGeneralCNGeneralFormula (123)HHt-C4H9Hformula (112)formula (112)formula (112)237GeneralGeneralCNGeneralFormula (123)HHClHformula (112)formula (112)formula (112)238GeneralGeneralCNGeneralFormula (123)HHFHformula (112)formula (112)formula (112)239GeneralGeneralCNGeneralFormula (123)HHHCH3formula (112)formula (112)formula (112)240GeneralGeneralCNGeneralFormula (123)HHHCH3Oformula (112)formula (112)formula (112) TABLE 1-5CompoundGeneral formula (1)General formula (112)No.R1R2R3R4R5R31, R38R32, R37R33, R36R34, R35241GeneralGeneralCNGeneralFormula (124)HHHHformula (112)formula (112)formula (112)242GeneralGeneralCNGeneralFormula (124)HCH3HHformula (112)formula (112)formula (112)243GeneralGeneralCNGeneralFormula (124)HCH3OHHformula (112)formula (112)formula (112)244GeneralGeneralCNGeneralFormula (124)HHCH3Hformula (112)formula (112)formula (112)245GeneralGeneralCNGeneralFormula (124)HHCH3OHformula (112)formula (112)formula (112)246GeneralGeneralCNGeneralFormula (124)HHt-C4H9Hformula (112)formula (112)formula (112)247GeneralGeneralCNGeneralFormula (124)HHClHformula (112)formula (112)formula (112)248GeneralGeneralCNGeneralFormula (124)HHFHformula (112)formula (112)formula (112)249GeneralGeneralCNGeneralFormula (124)HHHCH3formula (112)formula (112)formula (112)250GeneralGeneralCNGeneralFormula (124)HHHCH3Oformula (112)formula (112)formula (112)251GeneralGeneralCNGeneralGeneralHC6H5HHformula (112)formula (112)formula (112)formula (112)252GeneralGeneralCNGeneralGeneralHHC5H6Hformula (112)formula (112)formula (112)formula (112)253GeneralGeneralCNGeneralHHC6H5HHformula (112)formula (112)formula (112)254GeneralGeneralCNGeneralHHHC5H6Hformula (112)formula (112)formula (112)255GeneralGeneralCNHHHC6H5HHformula (112)formula (112)256GeneralGeneralCNHHHHC6H5Hformula (112)formula (112)257GeneralHCNGeneralHHC6H5HHformula (112)formula (112)258GeneralHCNGeneralHHHC6H5Hformula (112)formula (112)259GeneralHCNHGeneralHC6H5HHformula (112)formula (112)260GeneralHCNHGeneralHHC6H5Hformula (112)formula (112)261GeneralHCNHHHC6H5HHformula (112)262GeneralHCNHHHHC6H5Hformula (112)263GeneralGeneralCNGeneralFHC6H5HHformula (112)formula (112)formula (112)264GeneralGeneralCNGeneralFHHC6H5Hformula (112)formula (112)formula (112)265GeneralGeneralCNFFHC6H5HHformula (112)formula (112)266GeneralGeneralCNFFHHC6H5Hformula (112)formula (112)267GeneralFCNGeneralFHC6H5HHformula (112)formula (112)268GeneralFCNGeneralFHHC6H5Hformula (112)formula (112)269GeneralFCNFGeneralHC6H5HHformula (112)formula (112)270GeneralFCNFGeneralHHC6H5Hformula (112)formula (112)271GeneralFCNFFHC6H5HHformula (112)272GeneralFCNFFHHC6H5Hformula (112)273GeneralGeneralCNGeneralOHHC6H5HHformula (112)formula (112)formula (112)274GeneralGeneralCNGeneralOHHHC6H5Hformula (112)formula (112)formula (112)275GeneralGeneralCNOHOHHC6H5HHformula (112)formula (112)276GeneralGeneralCNOHOHHHC6H5Hformula (112)formula (112)277GeneralOHCNGeneralOHHC6H5HHformula (112)formula (112)278GeneralOHCNGeneralOHHHC6H5Hformula (112)formula (112)279GeneralOHCNOHGeneralHC6H5HHformula (112)formula (112)280GeneralOHCNOHGeneralHHC6H5Hformula (112)formula (112)281GeneralOHCNOHOHHC6H5HHformula (112)282GeneralOHCNOHOHHHC6H5Hformula (112)283GeneralGeneralCNGeneralClHC6H5HHformula (112)formula (112)formula (112)284GeneralGeneralCNGeneralClHHC6H5Hformula (112)formula (112)formula (112)285GeneralGeneralCNGeneralFHC6H5HHformula (112)formula (112)formula (112)286GeneralGeneralCNGeneralFHHC6H5Hformula (112)formula (112)formula (112)287GeneralGeneralCNGeneralCH3OHC6H5HHformula (112)formula (112)formula (112)288GeneralGeneralCNGeneralCH3OHHC6H5Hformula (112)formula (112)formula (112)289GeneralGeneralCNGeneralC2H5OHC6H5HHformula (112)formula (112)formula (112)290GeneralGeneralCNGeneralC2H5OHHC6H5Hformula (112)formula (112)formula (112)291GeneralGeneralCNGeneralC6H5OHC6H5HHformula (112)formula (112)formula (112)292GeneralGeneralCNGeneralC6H5OHHC6H5Hformula (112)formula (112)formula (112)293GeneralGeneralCNGeneralFormula (121)HC6H5HHformula (112)formula (112)formula (112)294GeneralGeneralCNGeneralFormula (121)HHC6H5Hformula (112)formula (112)formula (112)295GeneralGeneralCNGeneralFormula (122)HC6H5HHformula (112)formula (112)formula (112)296GeneralGeneralCNGeneralFormula (122)HHC6H5Hformula (112)formula (112)formula (112)297GeneralGeneralCNGeneralFormula (123)HC6H5HHformula (112)formula (112)formula (112)298GeneralGeneralCNGeneralFormula (123)HHC6H5Hformula (112)formula (112)formula (112)299GeneralGeneralCNGeneralFormula (124)HC6H5HHformula (112)formula (112)formula (112)300GeneralGeneralCNGeneralFormula (124)HHC6H5Hformula (112)formula (112)formula (112) TABLE 2-1CompoundGeneral formula (1)General formula (112)No.R1R2R3R4R5R31, R38R32, R37R33, R36R34, R35301GeneralCNGeneralGeneralGeneralHHHHformula (112)formula (112)formula (112)formula (112)302GeneralCNGeneralGeneralGeneralHCH3HHformula (112)formula (112)formula (112)formula (112)303GeneralCNGeneralGeneralGeneralHCH3OHHformula (112)formula (112)formula (112)formula (112)304GeneralCNGeneralGeneralGeneralHHCH3Hformula (112)formula (112)formula (112)formula (112)305GeneralCNGeneralGeneralGeneralHHCH3OHformula (112)formula (112)formula (112)formula (112)306GeneralCNGeneralGeneralGeneralHHt-C4H9Hformula (112)formula (112)formula (112)formula (112)307GeneralCNGeneralGeneralGeneralHHClHformula (112)formula (112)formula (112)formula (112)308GeneralCNGeneralGeneralGeneralHHFHformula (112)formula (112)formula (112)formula (112)309GeneralCNGeneralGeneralGeneralHHHCH3formula (112)formula (112)formula (112)formula (112)310GeneralCNGeneralGeneralGeneralHHHCH3Oformula (112)formula (112)formula (112)formula (112)311GeneralCNGeneralGeneralHHHHHformula (112)formula (112)formula (112)312GeneralCNGeneralGeneralHHHCH3Hformula (112)formula (112)formula (112)313GeneralCNGeneralGeneralHHHCH3OHformula (112)formula (112)formula (112)314GeneralCNGeneralHGeneralHHHHformula (112)formula (112)formula (112)315GeneralCNGeneralHGeneralHHCH3Hformula (112)formula (112)formula (112)316GeneralCNGeneralHGeneralHHCH3OHformula (112)formula (112)formula (112)317GeneralCNHGeneralGeneralHHHHformula (112)formula (112)formula (112)318GeneralCNHGeneralGeneralHHCH3Hformula (112)formula (112)formula (112)319GeneralCNHGeneralGeneralHHCH3OHformula (112)formula (112)formula (112)320HCNGeneralGeneralGeneralHHHHformula (112)formula (112)formula (112)321HCNGeneralGeneralGeneralHHCH3Hformula (112)formula (112)formula (112)322HCNGeneralGeneralGeneralHHCH3OHformula (112)formula (112)formula (112)323GeneralCNGeneralHHHHHHformula (112)formula (112)324GeneralCNGeneralHHHHCH3Hformula (112)formula (112)325GeneralCNGeneralHHHHCH3OHformula (112)formula (112)326GeneralCNHGeneralHHHHHformula (112)formula (112)327GeneralCNHGeneralHHHCH3Hformula (112)formula (112)328GeneralCNHGeneralHHHCH3OHformula (112)formula (112)329HCNGeneralGeneralHHHHHformula (112)formula (112)330HCNGeneralGeneralHHHCH3Hformula (112)formula (112)331HCNGeneralGeneralHHHCH3OHformula (112)formula (112)332GeneralCNHHGeneralHHHHformula (112)formula (112)333GeneralCNHHGeneralHHCH3Hformula (112)formula (112)334GeneralCNHHGeneralHHCH3OHformula (112)formula (112)335HCNGeneralHGeneralHHHHformula (112)formula (112)336HCNGeneralHGeneralHHCH3Hformula (112)formula (112)337HCNGeneralHGeneralHHCH3OHformula (112)formula (112)338HCNHGeneralGeneralHHHHformula (112)formula (112)339HCNHGeneralGeneralHHCH3Hformula (112)formula (112)340HCNHGeneralGeneralHHCH3OHformula (112)formula (112)341GeneralCNHHHHHHHformula (112)342GeneralCNHHHHHCH3Hformula (112)343GeneralCNHHHHHCH3OHformula (112)344HCNGeneralHHHHHHformula (112)345HCNGeneralHHHHCH3Hformula (112)346HCNGeneralHHHHCH3OHformula (112)347HCNHGeneralHHHHHformula (112)348HCNHGeneralHHHCH3Hformula (112)349HCNHGeneralHHHCH3OHformula (112)350GeneralCNGeneralGeneralFHHHHformula (112)formula (112)formula (112) TABLE 2-2CompoundGeneral formula (1)General formula (112)No.R1R2R3R4R5R31, R38R32, R37R33, R36R34, R35351GeneralCNGeneralGeneralFHHCH3Hformula (112)formula (112)formula (112)352GeneralCNGeneralGeneralFHHCH3OHformula (112)formula (112)formula (112)353GeneralCNGeneralFGeneralHHHHformula (112)formula (112)formula (112)354GeneralCNGeneralFGeneralHHCH3Hformula (112)formula (112)formula (112)355GeneralCNGeneralFGeneralHHCH3OHformula (112)formula (112)formula (112)356GeneralCNFGeneralGeneralHHHHformula (112)formula (112)formula (112)357GeneralCNFGeneralGeneralHHCH3Hformula (112)formula (112)formula (112)358GeneralCNFGeneralGeneralHHCH3OHformula (112)formula (112)formula (112)359FCNGeneralGeneralGeneralHHHHformula (112)formula (112)formula (112)360FCNGeneralGeneralGeneralHHCH3Hformula (112)formula (112)formula (112)361FCNGeneralGeneralGeneralHHCH3OHformula (112)formula (112)formula (112)362GeneralCNGeneralFFHHHHformula (112)formula (112)363GeneralCNGeneralFFHHCH3Hformula (112)formula (112)364GeneralCNGeneralFFHHCH3OHformula (112)formula (112)365GeneralCNFGeneralFHHHHformula (112)formula (112)366GeneralCNFGeneralFHHCH3Hformula (112)formula (112)367GeneralCNFGeneralFHHCH3OHformula (112)formula (112)368FCNGeneralGeneralFHHHHformula (112)formula (112)369FCNGeneralGeneralFHHCH3Hformula (112)formula (112)370FCNGeneralGeneralFHHCH3OHformula (112)formula (112)371GeneralCNFFGeneralHHHHformula (112)formula (112)372GeneralCNFFGeneralHHCH3Hformula (112)formula (112)373GeneralCNFFGeneralHHCH3OHformula (112)formula (112)374FCNGeneralFGeneralHHHHformula (112)formula (112)375FCNGeneralFGeneralHHCH3Hformula (112)formula (112)376FCNGeneralFGeneralHHCH3OHformula (112)formula (112)377FCNFGeneralGeneralHHHHformula (112)formula (112)378FCNFGeneralGeneralHHCH3Hformula (112)formula (112)379FCNFGeneralGeneralHHCH3OHformula (112)formula (112)380GeneralCNFFFHHHHformula (112)381GeneralCNFFFHHCH3Hformula (112)382GeneralCNFFFHHCH3OHformula (112)383FCNGeneralFFHHHHformula (112)384FCNGeneralFFHHCH3Hformula (112)385FCNGeneralFFHHCH3OHformula (112)386FCNFGeneralFHHHHformula (112)387FCNFGeneralFHHCH3Hformula (112)388FCNFGeneralFHHCH3OHformula (112)389GeneralCNGeneralGeneralOHHHHHformula (112)formula (112)formula (112)390GeneralCNGeneralGeneralOHHHCH3Hformula (112)formula (112)formula (112)391GeneralCNGeneralGeneralOHHHCH3OHformula (112)formula (112)formula (112)392GeneralCNGeneralOHGeneralHHHHformula (112)formula (112)formula (112)393GeneralCNGeneralOHGeneralHHCH3Hformula (112)formula (112)formula (112)394GeneralCNGeneralOHGeneralHHCH3OHformula (112)formula (112)formula (112)395GeneralCNGeneralOHGeneralHHt-C4H9Hformula (112)formula (112)formula (112)396GeneralCNGeneralOHGeneralHHClHformula (112)formula (112)formula (112)397GeneralCNGeneralOHGeneralHHFHformula (112)formula (112)formula (112)398GeneralCNOHGeneralGeneralHHHHformula (112)formula (112)formula (112)399GeneralCNOHGeneralGeneralHHCH3Hformula (112)formula (112)formula (112)400GeneralCNOHGeneralGeneralHHCH3OHformula (112)formula (112)formula (112)401OHCNGeneralGeneralGeneralHHHHformula (112)formula (112)formula (112)402OHCNGeneralGeneralGeneralHHCH3Hformula (112)formula (112)formula (112)403OHCNGeneralGeneralGeneralHHCH3OHformula (112)formula (112)formula (112)404GeneralCNGeneralOHOHHHHHformula (112)formula (112)405GeneralCNGeneralOHOHHHCH3Hformula (112)formula (112) TABLE 2-3CompoundGeneral formula (1)General formula (112)No.R1R2R3R4R5R31, R38R32, R37R33, R36R34, R35406GeneralCNGeneralOHOHHHCH3OHformula (112)formula (112)407GeneralCNOHGeneralOHHHHHformula (112)formula (112)408GeneralCNOHGeneralOHHHCH3Hformula (112)formula (112)409GeneralCNOHGeneralOHHHCH3OHformula (112)formula (112)410OHCNGeneralGeneralOHHHHHformula (112)formula (112)411OHCNGeneralGeneralOHHHCH3Hformula (112)formula (112)412OHCNGeneralGeneralOHHHCH3OHformula (112)formula (112)413GeneralCNOHOHGeneralHHHHformula (112)formula (112)414GeneralCNOHOHGeneralHHCH3Hformula (112)formula (112)415GeneralCNOHOHGeneralHHCH3OHformula (112)formula (112)416OHCNGeneralOHGeneralHHHHformula (112)formula (112)417OHCNGeneralOHGeneralHHCH3Hformula (112)formula (112)418OHCNGeneralOHGeneralHHCH3OHformula (112)formula (112)419OHCNOHGeneralGeneralHHHHformula (112)formula (112)420OHCNOHGeneralGeneralHHCH3Hformula (112)formula (112)421OHCNOHGeneralGeneralHHCH3OHformula (112)formula (112)422GeneralCNOHOHOHHHHHformula (112)423GeneralCNOHOHOHHHCH3Hformula (112)424GeneralCNOHOHOHHHCH3OHformula (112)425OHCNGeneralOHOHHHHHformula (112)426OHCNGeneralOHOHHHCH3Hformula (112)427OHCNGeneralOHOHHHCH3OHformula (112)428OHCNOHGeneralOHHHHHformula (112)429OHCNOHGeneralOHHHCH3Hformula (112)430OHCNOHGeneralOHHHCH3OHformula (112)431OHCNOHOHGeneralHHHHformula (112)432OHCNOHOHGeneralHHCH3Hformula (112)433OHCNOHOHGeneralHHCH3OHformula (112)434GeneralCNGeneralClGeneralHHHHformula (112)formula (112)formula (112)435GeneralCNGeneralClGeneralHHCH3Hformula (112)formula (112)formula (112)436GeneralCNGeneralClGeneralHHCH3OHformula (112)formula (112)formula (112)437GeneralCNGeneralClGeneralHHt-C4H9Hformula (112)formula (112)formula (112)438GeneralCNGeneralClGeneralHHClHformula (112)formula (112)formula (112)439GeneralCNGeneralClGeneralHHFHformula (112)formula (112)formula (112)440GeneralCNGeneralFGeneralHHHHformula (112)formula (112)formula (112)441GeneralCNGeneralFGeneralHHCH3Hformula (112)formula (112)formula (112)442GeneralCNGeneralFGeneralHHCH3OHformula (112)formula (112)formula (112)443GeneralCNGeneralFGeneralHHt-C4H9Hformula (112)formula (112)formula (112)444GeneralCNGeneralFGeneralHHClHformula (112)formula (112)formula (112)445GeneralCNGeneralFGeneralHHFHformula (112)formula (112)formula (112)446GeneralCNGeneralCH3OGeneralHHHHformula (112)formula (112)formula (112)447GeneralCNGeneralCH3OGeneralHHCH3Hformula (112)formula (112)formula (112)448GeneralCNGeneralCH3OGeneralHHCH3OHformula (112)formula (112)formula (112)449GeneralCNGeneralCH3OGeneralHHt-C4H9Hformula (112)formula (112)formula (112)450GeneralCNGeneralCH3OGeneralHHClHformula (112)formula (112)formula (112)451GeneralCNGeneralCH3OGeneralHHFHformula (112)formula (112)formula (112)452GeneralCNGeneralC2H5OGeneralHHHHformula (112)formula (112)formula (112)453GeneralCNGeneralC2H5OGeneralHHCH3Hformula (112)formula (112)formula (112)454GeneralCNGeneralC2H5OGeneralHHCH3OHformula (112)formula (112)formula (112)455GeneralCNGeneralC2H5OGeneralHHt-C4H9Hformula (112)formula (112)formula (112)456GeneralCNGeneralC2H5OGeneralHHClHformula (112)formula (112)formula (112)457GeneralCNGeneralC2H5OGeneralHHFHformula (112)formula (112)formula (112)458GeneralCNGeneralC6H5OGeneralHHHHformula (112)formula (112)formula (112)459GeneralCNGeneralC6H5OGeneralHHCH3Hformula (112)formula (112)formula (112)460GeneralCNGeneralC6H5OGeneralHHCH3OHformula (112)formula (112)formula (112) TABLE 2-4CompoundGeneral formula (1)General formula (112)No.R1R2R3R4R5R31, R38R32, R37R33, R36R34, R35461GeneralCNGeneralC6H5OGeneralHHt-C4H9Hformula (112)formula (112)formula (112)462GeneralCNGeneralC6H5OGeneralHHClHformula (112)formula (112)formula (112)463GeneralCNGeneralC6H5OGeneralHHFHformula (112)formula (112)formula (112)464GeneralCNGeneralFormula (121)GeneralHHHHformula (112)formula (112)formula (112)465GeneralCNGeneralFormula (121)GeneralHHCH3Hformula (112)formula (112)formula (112)466GeneralCNGeneralFormula (121)GeneralHHCH3OHformula (112)formula (112)formula (112)467GeneralCNGeneralFormula (121)GeneralHHt-C4H9Hformula (112)formula (112)formula (112)468GeneralCNGeneralFormula (121)GeneralHHClHformula (112)formula (112)formula (112)469GeneralCNGeneralFormula (121)GeneralHHFHformula (112)formula (112)formula (112)470GeneralCNGeneralFormula (122)GeneralHHHHformula (112)formula (112)formula (112)471GeneralCNGeneralFormula (122)GeneralHHCH3Hformula (112)formula (112)formula (112)472GeneralCNGeneralFormula (122)GeneralHHCH3OHformula (112)formula (112)formula (112)473GeneralCNGeneralFormula (122)GeneralHHt-C4H9Hformula (112)formula (112)formula (112)474GeneralCNGeneralFormula (122)GeneralHHClHformula (112)formula (112)formula (112)475GeneralCNGeneralFormula (122)GeneralHHFHformula (112)formula (112)formula (112)476GeneralCNGeneralFormula (123)GeneralHHHHformula (112)formula (112)formula (112)477GeneralCNGeneralFormula (123)GeneralHHCH3Hformula (112)formula (112)formula (112)478GeneralCNGeneralFormula (123)GeneralHHCH3OHformula (112)formula (112)formula (112)479GeneralCNGeneralFormula (123)GeneralHHt-C4H9Hformula (112)formula (112)formula (112)480GeneralCNGeneralFormula (123)GeneralHHClHformula (112)formula (112)formula (112)481GeneralCNGeneralFormula (123)GeneralHHFHformula (112)formula (112)formula (112)482GeneralCNGeneralFormula (124)GeneralHHHHformula (112)formula (112)formula (112)483GeneralCNGeneralFormula (124)GeneralHHCH3Hformula (112)formula (112)formula (112)484GeneralCNGeneralFormula (124)GeneralHHCH3OHformula (112)formula (112)formula (112)485GeneralCNGeneralFormula (124)GeneralHHt-C4H9Hformula (112)formula (112)formula (112)486GeneralCNGeneralFormula (124)GeneralHHClHformula (112)formula (112)formula (112)487GeneralCNGeneralFormula (124)GeneralHHFHformula (112)formula (112)formula (112)488GeneralCNGeneralGeneralGeneralHC6H5HHformula (112)formula (112)formula (112)formula (112)489GeneralCNGeneralGeneralGeneralHHC6H5Hformula (112)formula (112)formula (112)formula (112)490GeneralCNGeneralGeneralHHC6H5HHformula (112)formula (112)formula (112)491GeneralCNGeneralGeneralHHHC6H5Hformula (112)formula (112)formula (112)492GeneralCNGeneralHGeneralHC6H5HHformula (112)formula (112)formula (112)493GeneralCNGeneralHGeneralHHC6H5Hformula (112)formula (112)formula (112)494GeneralCNHGeneralGeneralHC6H5HHformula (112)formula (112)formula (112)495GeneralCNHGeneralGeneralHHC6H5Hformula (112)formula (112)formula (112)496HCNGeneralGeneralGeneralHC6H5HHformula (112)formula (112)formula (112)497HCNGeneralGeneralGeneralHHC6H5Hformula (112)formula (112)formula (112)498GeneralCNGeneralHHHC6H5HHformula (112)formula (112)499GeneralCNGeneralHHHHC6H5Hformula (112)formula (112)500-1GeneralCNHGeneralHHC6H5HHformula (112)formula (112)500-2GeneralCNHGeneralHHHC6H5Hformula (112)formula (112)500-3HCNGeneralGeneralHHC6H5HHformula (112)formula (112)500-4HCNGeneralGeneralHHHC6H5Hformula (112)formula (112)500-5GeneralCNHHGeneralHC6H5HHformula (112)formula (112)500-6GeneralCNHHGeneralHHC6H5Hformula (112)formula (112)500-7HCNGeneralHGeneralHC6H5HHformula (112)formula (112)500-8HCNGeneralHGeneralHHC6H5Hformula (112)formula (112)500-9HCNHGeneralGeneralHC6H5HHformula (112)formula (112)500-10HCNHGeneralGeneralHHC6H5Hformula (112)formula (112)500-11GeneralCNHHHHC6H5HHformula (112)500-12GeneralCNHHHHHC6H5Hformula (112)500-13HCNGeneralHHHC6H5HHformula (112)500-14HCNGeneralHHHHC6H5Hformula (112)500-15HCNHGeneralHHC6H5HHformula (112) TABLE 2-5CompoundGeneral formula (1)General formula (112)No.R1R2R3R4R5R31, R38R32, R37R33, R36R34, R35500-16HCNHGeneralHHHC6H5Hformula (112)500-17GeneralCNGeneralGeneralFHHC6H5Hformula (112)formula (112)formula (112)500-18GeneralCNGeneralFGeneralHHC6H5Hformula (112)formula (112)formula (112)500-19GeneralCNFGeneralGeneralHHC6H5Hformula (112)formula (112)formula (112)500-20FCNGeneralGeneralGeneralHHC6H5Hformula (112)formula (112)formula (112)500-21GeneralCNGeneralFFHHC6H5Hformula (112)formula (112)500-22GeneralCNFGeneralFHHC6H5Hformula (112)formula (112)500-23FCNGeneralGeneralFHHC6H5Hformula (112)formula (112)500-24GeneralCNFFGeneralHHC6H5Hformula (112)formula (112)500-25FCNGeneralFGeneralHHC6H5Hformula (112)formula (112)500-26FCNFGeneralGeneralHHC6H5Hformula (112)formula (112)500-27GeneralCNFFFHHC6H5Hformula (112)500-28FCNGeneralFFHHC6H5Hformula (112)500-29FCNFGeneralFHHC6H5Hformula (112)500-30GeneralCNGeneralGeneralOHHHC6H5Hformula (112)formula (112)formula (112)500-31GeneralCNGeneralOHGeneralHHC6H5Hformula (112)formula (112)formula (112)500-32GeneralCNOHGeneralGeneralHHC6H5Hformula (112)formula (112)formula (112)500-33OHCNGeneralGeneralGeneralHHC6H5Hformula (112)formula (112)formula (112)500-34GeneralCNGeneralOHOHHHC6H5Hformula (112)formula (112)500-35GeneralCNOHGeneralOHHHC6H5Hformula (112)formula (112)500-36OHCNGeneralGeneralOHHHC6H5Hformula (112)formula (112)500-37GeneralCNOHOHGeneralHHC6H5Hformula (112)formula (112)500-38OHCNGeneralOHGeneralHHC6H5Hformula (112)formula (112)500-39OHCNOHGeneralGeneralHHC6H5Hformula (112)formula (112)500-40GeneralCNOHOHOHHHC6H5Hformula (112)500-41OHCNGeneralOHOHHHC6H5Hformula (112)500-42OHCNOHGeneralOHHHC6H5Hformula (112)500-43OHCNOHOHGeneralHHC6H5Hformula (112)500-44GeneralCNGeneralClGeneralHHC6H5Hformula (112)formula (112)formula (112)500-45GeneralCNGeneralFGeneralHHC6H5Hformula (112)formula (112)formula (112)500-46GeneralCNGeneralCH3OGeneralHHC6H5Hformula (112)formula (112)formula (112)500-47GeneralCNGeneralC2H5OGeneralHHC6H5Hformula (112)formula (112)formula (112)500-48GeneralCNGeneralC6H5OGeneralHHC6H5Hformula (112)formula (112)formula (112)500-49GeneralCNGeneralFormula (121)GeneralHHC6H5Hformula (112)formula (112)formula (112)500-50GeneralCNGeneralFormula (122)GeneralHHC6H5Hformula (112)formula (112)formula (112)500-51GeneralCNGeneralFormula (123)GeneralHHC6H5Hformula (112)formula (112)formula (112)500-52GeneralCNGeneralFormula (124)GeneralHHC6H5Hformula (112)formula (112)formula (112) TABLE 3-1CompoundGeneral formula (1)General formula (112)No.R1R2R3R4R5R31, R38R32, R37R33, R36R34, R35501CNGeneralGeneralGeneralGeneralHHHHformula (112)formula (112)formula (112)formula (112)502CNGeneralGeneralGeneralGeneralHCH3HHformula (112)formula (112)formula (112)formula (112)503CNGeneralGeneralGeneralGeneralHCH3OHHformula (112)formula (112)formula (112)formula (112)504CNGeneralGeneralGeneralGeneralHHCH3Hformula (112)formula (112)formula (112)formula (112)505CNGeneralGeneralGeneralGeneralHHCH3OHformula (112)formula (112)formula (112)formula (112)506CNGeneralGeneralGeneralGeneralHHt-C4H9Hformula (112)formula (112)formula (112)formula (112)507CNGeneralGeneralGeneralGeneralHHClHformula (112)formula (112)formula (112)formula (112)508CNGeneralGeneralGeneralGeneralHHFHformula (112)formula (112)formula (112)formula (112)509CNGeneralGeneralGeneralGeneralHHHCH3formula (112)formula (112)formula (112)formula (112)510CNGeneralGeneralGeneralGeneralHHHCH3Oformula (112)formula (112)formula (112)formula (112)511CNGeneralGeneralGeneralHHHHHformula (112)formula (112)formula (112)512CNGeneralGeneralGeneralHHHCH3Hformula (112)formula (112)formula (112)513CNGeneralGeneralGeneralHHHCH3OHformula (112)formula (112)formula (112)514CNGeneralGeneralHGeneralHHHHformula (112)formula (112)formula (112)515CNGeneralGeneralHGeneralHHCH3Hformula (112)formula (112)formula (112)516CNGeneralGeneralHGeneralHHCH3OHformula (112)formula (112)formula (112)517CNGeneralGeneralHHHHHHformula (112)formula (112)518CNGeneralGeneralHHHHCH3Hformula (112)formula (112)519CNGeneralGeneralHHHHCH3OHformula (112)formula (112)520CNGeneralHGeneralHHHHHformula (112)formula (112)521CNGeneralHGeneralHHHCH3Hformula (112)formula (112)522CNGeneralHGeneralHHHCH3OHformula (112)formula (112)523CNHGeneralGeneralHHHHHformula (112)formula (112)524CNHGeneralGeneralHHHCH3Hformula (112)formula (112)525CNHGeneralGeneralHHHCH3OHformula (112)formula (112)526CNGeneralHHGeneralHHHHformula (112)formula (112)527CNGeneralHHGeneralHHCH3Hformula (112)formula (112)528CNGeneralHHGeneralHHCH3OHformula (112)formula (112)529CNGeneralHHHHHHHformula (112)530CNGeneralHHHHHCH3Hformula (112)531CNGeneralHHHHHCH3OHformula (112)532CNHGeneralHHHHHHformula (112)533CNHGeneralHHHHCH3Hformula (112)534CNHGeneralHHHHCH3OHformula (112)535CNGeneralGeneralGeneralFHHHHformula (112)formula (112)formula (112)536CNGeneralGeneralGeneralFHHCH3Hformula (112)formula (112)formula (112)537CNGeneralGeneralGeneralFHHCH3OHformula (112)formula (112)formula (112)538CNGeneralGeneralFGeneralHHHHformula (112)formula (112)formula (112)539CNGeneralGeneralFGeneralHHCH3Hformula (112)formula (112)formula (112)540CNGeneralGeneralFGeneralHHCH3OHformula (112)formula (112)formula (112)541CNGeneralGeneralFFHHHHformula (112)formula (112)542CNGeneralGeneralFFHHCH3Hformula (112)formula (112)543CNGeneralGeneralFFHHCH3OHformula (112)formula (112)544CNGeneralFGeneralFHHHHformula (112)formula (112)545CNGeneralFGeneralFHHCH3Hformula (112)formula (112)546CNGeneralFGeneralFHHCH3OHformula (112)formula (112)547CNFGeneralGeneralFHHHHformula (112)formula (112)548CNFGeneralGeneralFHHCH3Hformula (112)formula (112)549CNFGeneralGeneralFHHCH3OHformula (112)formula (112)550CNGeneralFFGeneralHHHHformula (112)formula (112)551CNGeneralFFGeneralHHCH3Hformula (112)formula (112)552CNGeneralFFGeneralHHCH3OHformula (112)formula (112)553CNGeneralFFFHHHHformula (112)554CNGeneralFFFHHCH3Hformula (112)555CNGeneralFFFHHCH3OHformula (112)556CNFGeneralFFHHHHformula (112)557CNFGeneralFFHHCH3Hformula (112)558CNFGeneralFFHHCH3OHformula (112)559CNGeneralGeneralGeneralOHHHHHformula (112)formula (112)formula (112) TABLE 3-2CompoundGeneral formula (1)General formula (112)No.R1R2R3R4R5R31, R38R32, R37R33, R36R34, R35560CNGeneralGeneralGeneralOHHHCH3Hformula (112)formula (112)formula (112)561CNGeneralGeneralGeneralOHHHCH3OHformula (112)formula (112)formula (112)562CNGeneralGeneralOHGeneralHHHHformula (112)formula (112)formula (112)563CNGeneralGeneralOHGeneralHHCH3Hformula (112)formula (112)formula (112)654CNGeneralGeneralOHGeneralHHCH3OHformula (112)formula (112)formula (112)565CNGeneralGeneralOHGeneralHHClHformula (112)formula (112)formula (112)566CNGeneralGeneralOHGeneralHHFHformula (112)formula (112)formula (112)567CNGeneralGeneralOHOHHHHHformula (112)formula (112)568CNGeneralGeneralOHOHHHCH3Hformula (112)formula (112)569CNGeneralGeneralOHOHHHCH3OHformula (112)formula (112)570CNGeneralOHGeneralOHHHHHformula (112)formula (112)571CNGeneralOHGeneralOHHHCH3Hformula (112)formula (112)572CNGeneralOHGeneralOHHHCH3OHformula (112)formula (112)573CNOHGeneralGeneralOHHHHHformula (112)formula (112)574CNOHGeneralGeneralOHHHCH3Hformula (112)formula (112)575CNOHGeneralGeneralOHHHCH3OHformula (112)formula (112)576CNGeneralOHOHGeneralHHHHformula (112)formula (112)577CNGeneralOHOHGeneralHHCH3Hformula (112)formula (112)578CNGeneralOHOHGeneralHHCH3OHformula (112)formula (112)579CNGeneralOHOHOHHHHHformula (112)580CNGeneralOHOHOHHHCH3Hformula (112)581CNGeneralOHOHOHHHCH3OHformula (112)582CNOHGeneralOHOHHHHHformula (112)583CNOHGeneralOHOHHHCH3Hformula (112)584CNOHGeneralOHOHHHCH3OHformula (112)585CNGeneralGeneralClGeneralHHHHformula (112)formula (112)formula (112)586CNGeneralGeneralClGeneralHHCH3Hformula (112)formula (112)formula (112)587CNGeneralGeneralClGeneralHHCH3OHformula (112)formula (112)formula (112)588CNGeneralGeneralClGeneralHHt-C4H9Hformula (112)formula (112)formula (112)589CNGeneralGeneralClGeneralHHClHformula (112)formula (112)formula (112)590CNGeneralGeneralClGeneralHHFHformula (112)formula (112)formula (112)591CNGeneralGeneralFGeneralHHHHformula (112)formula (112)formula (112)592CNGeneralGeneralFGeneralHHCH3Hformula (112)formula (112)formula (112)593CNGeneralGeneralFGeneralHHCH3OHformula (112)formula (112)formula (112)594CNGeneralGeneralFGeneralHHt-C4H9Hformula (112)formula (112)formula (112)595CNGeneralGeneralFGeneralHHClHformula (112)formula (112)formula (112)596CNGeneralGeneralFGeneralHHFHformula (112)formula (112)formula (112)597CNGeneralGeneralCH3OGeneralHHHHformula (112)formula (112)formula (112)598CNGeneralGeneralCH3OGeneralHHCH3Hformula (112)formula (112)formula (112)599CNGeneralGeneralCH3OGeneralHHCH3OHformula (112)formula (112)formula (112)600CNGeneralGeneralCH3OGeneralHHt-C4H9Hformula (112)formula (112)formula (112)601CNGeneralGeneralCH3OGeneralHHClHformula (112)formula (112)formula (112)602CNGeneralGeneralCH3OGeneralHHFHformula (112)formula (112)formula (112)603CNGeneralGeneralC2H5OGeneralHHHHformula (112)formula (112)formula (112)604CNGeneralGeneralC2H5OGeneralHHCH3Hformula (112)formula (112)formula (112)605CNGeneralGeneralC2H5OGeneralHHCH3OHformula (112)formula (112)formula (112)606CNGeneralGeneralC2H5OGeneralHHt-C4H9Hformula (112)formula (112)formula (112)607CNGeneralGeneralC2H5OGeneralHHClHformula (112)formula (112)formula (112)608CNGeneralGeneralC2H5OGeneralHHFHformula (112)formula (112)formula (112)609CNGeneralGeneralC6H5OGeneralHHHHformula (112)formula (112)formula (112)610CNGeneralGeneralC6H5OGeneralHHCH3Hformula (112)formula (112)formula (112)611CNGeneralGeneralC6H5OGeneralHHCH3OHformula (112)formula (112)formula (112)612CNGeneralGeneralC6H5OGeneralHHt-C4H9Hformula (112)formula (112)formula (112)613CNGeneralGeneralC6H5OGeneralHHClHformula (112)formula (112)formula (112)614CNGeneralGeneralC6H5OGeneralHHFHformula (112)formula (112)formula (112)615CNGeneralGeneralFormula (121)GeneralHHHHformula (112)formula (112)formula (112)616CNGeneralGeneralFormula (121)GeneralHHCH3Hformula (112)formula (112)formula (112)617CNGeneralGeneralFormula (121)GeneralHHCH3OHformula (112)formula (112)formula (112)618CNGeneralGeneralFormula (121)GeneralHHt-C4H9Hformula (112)formula (112)formula (112)619CNGeneralGeneralFormula (121)GeneralHHClHformula (112)formula (112)formula (112)620CNGeneralGeneralFormula (121)GeneralHHFHformula (112)formula (112)formula (112) TABLE 3-3CompoundGeneral formula (1)General formula (112)No.R1R2R3R4R5R31, R38R32, R37R33, R36R34, R35621CNGeneralGeneralFormula (122)GeneralHHHHformula (112)formula (112)formula (112)622CNGeneralGeneralFormula (122)GeneralHHCH3Hformula (112)formula (112)formula (112)623CNGeneralGeneralFormula (122)GeneralHHCH3OHformula (112)formula (112)formula (112)624CNGeneralGeneralFormula (122)GeneralHHt-C4H9Hformula (112)formula (112)formula (112)625CNGeneralGeneralFormula (122)GeneralHHClHformula (112)formula (112)formula (112)626CNGeneralGeneralFormula (122)GeneralHHFHformula (112)formula (112)formula (112)627CNGeneralGeneralFormula (123)GeneralHHHHformula (112)formula (112)formula (112)628CNGeneralGeneralFormula (123)GeneralHHCH3Hformula (112)formula (112)formula (112)629CNGeneralGeneralFormula (123)GeneralHHCH3OHformula (112)formula (112)formula (112)630CNGeneralGeneralFormula (123)GeneralHHt-C4H9Hformula (112)formula (112)formula (112)631CNGeneralGeneralFormula (123)GeneralHHClHformula (112)formula (112)formula (112)632CNGeneralGeneralFormula (123)GeneralHHFHformula (112)formula (112)formula (112)633CNGeneralGeneralFormula (124)GeneralHHHHformula (112)formula (112)formula (112)634CNGeneralGeneralFormula (124)GeneralHHCH3Hformula (112)formula (112)formula (112)635CNGeneralGeneralFormula (124)GeneralHHCH3OHformula (112)formula (112)formula (112)636CNGeneralGeneralFormula (124)GeneralHHt-C4H9Hformula (112)formula (112)formula (112)637CNGeneralGeneralFormula (124)GeneralHHClHformula (112)formula (112)formula (112)638CNGeneralGeneralFormula (124)GeneralHHFHformula (112)formula (112)formula (112)639CNGeneralGeneralGeneralGeneralHC6H5HHformula (112)formula (112)formula (112)formula (112)640CNGeneralGeneralGeneralGeneralHHC6H5Hformula (112)formula (112)formula (112)formula (112)641CNGeneralGeneralGeneralHHC6H5HHformula (112)formula (112)formula (112)642CNGeneralGeneralGeneralHHHC6H5Hformula (112)formula (112)formula (112)643CNGeneralGeneralHGeneralHC6H5HHformula (112)formula (112)formula (112)644CNGeneralGeneralHGeneralHHC6H5Hformula (112)formula (112)formula (112)645CNGeneralGeneralHHHC6H5HHformula (112)formula (112)646CNGeneralGeneralHHHHC6H5Hformula (112)formula (112)647CNGeneralHGeneralHHC6H5HHformula (112)formula (112)648CNGeneralHGeneralHHHC6H5Hformula (112)formula (112)649CNHGeneralGeneralHHC6H5HHformula (112)formula (112)650CNHGeneralGeneralHHHC6H5Hformula (112)formula (112)651CNHHGeneralGeneralHC6H5HHformula (112)formula (112)652CNHHGeneralGeneralHHC6H5Hformula (112)formula (112)653CNGeneralHHHHC6H5HHformula (112)654CNGeneralHHHHHC6H5Hformula (112)655CNHGeneralHHHC6H5HHformula (112)656CNHGeneralHHHHC6H5Hformula (112)657CNGeneralGeneralGeneralFHHC6H5Hformula (112)formula (112)formula (112)658CNGeneralGeneralFGeneralHHC6H5Hformula (112)formula (112)formula (112)659CNGeneralGeneralFFHHC6H5Hformula (112)formula (112)660CNGeneralFGeneralFHHC6H5Hformula (112)formula (112)661CNFGeneralGeneralFHHC6H5Hformula (112)formula (112)662CNFFGeneralGeneralHHC6H5Hformula (112)formula (112)663CNGeneralFFFHHC6H5Hformula (112)664CNFGeneralFFHHC6H5Hformula (112)665CNGeneralGeneralGeneralOHHHC6H5Hformula (112)formula (112)formula (112)666CNGeneralGeneralOHGeneralHHC6H5Hformula (112)formula (112)formula (112)667CNGeneralGeneralOHOHHHC6H5Hformula (112)formula (112)668CNGeneralOHGeneralOHHHC6H5Hformula (112)formula (112)669CNOHGeneralGeneralOHHHC6H5Hformula (112)formula (112)670CNOHOHGeneralGeneralHHC6H5Hformula (112)formula (112)671CNGeneralOHOHOHHHC6H5Hformula (112)672CNOHGeneralOHOHHHC6H5Hformula (112)673CNGeneralGeneralClGeneralHHC6H5Hformula (112)formula (112)formula (112)674CNGeneralGeneralFGeneralHHC6H5Hformula (112)formula (112)formula (112)675CNGeneralGeneralCH3OGeneralHHC6H5Hformula (112)formula (112)formula (112)676CNGeneralGeneralC2H5OGeneralHHC6H5Hformula (112)formula (112)formula (112)677CNGeneralGeneralC6H5OGeneralHHC6H5Hformula (112)formula (112)formula (112)678CNGeneralGeneralFormula (121)GeneralHHC6H5Hformula (112)formula (112)formula (112)679CNGeneralGeneralFormula (122)GeneralHHC6H5Hformula (112)formula (112)formula (112)680CNGeneralGeneralFormula (123)GeneralHHC6H5Hformula (112)formula (112)formula (112)681CNGeneralGeneralFormula (124)GeneralHHC6H5Hformula (112)formula (112)formula (112) TABLE 4-1Com-poundGeneral formula (1)General formula (113)No.R1R2R3R4R5R41R42R43R44R45R46701GeneralGeneralCNGeneralGeneralHHHHHHformula (113)formula (113)formula (113)formula (113)702GeneralGeneralCNGeneralGeneralHCH3HHHHformula (113)formula (113)formula (113)formula (113)703GeneralGeneralCNGeneralGeneralHCH3OHHHHformula (113)formula (113)formula (113)formula (113)704GeneralGeneralCNGeneralGeneralHHCH3HHHformula (113)formula (113)formula (113)formula (113)705GeneralGeneralCNGeneralGeneralHHCH3OHHHformula (113)formula (113)formula (113)formula (113)706GeneralGeneralCNGeneralGeneralHHt-C4H9HHHformula (113)formula (113)formula (113)formula (113)707GeneralGeneralCNGeneralGeneralHHClHHHformula (113)formula (113)formula (113)formula (113)708GeneralGeneralCNGeneralGeneralHHFHHHformula (113)formula (113)formula (113)formula (113)709GeneralGeneralCNGeneralGeneralHHHCH3HHformula (113)formula (113)formula (113)formula (113)710GeneralGeneralCNGeneralGeneralHHHCH3OHHformula (113)formula (113)formula (113)formula (113)711GeneralGeneralCNGeneralGeneralHHHHCH3Hformula (113)formula (113)formula (113)formula (113)712GeneralGeneralCNGeneralGeneralHHHHCH3OHformula (113)formula (113)formula (113)formula (113)713GeneralGeneralCNGeneralGeneralHHHHt-C4H9Hformula (113)formula (113)formula (113)formula (113)714GeneralGeneralCNGeneralGeneralHHHHClHformula (113)formula (113)formula (113)formula (113)715GeneralGeneralCNGeneralGeneralHHHHFHformula (113)formula (113)formula (113)formula (113)716GeneralGeneralCNGeneralGeneralHHHHC6H5Hformula (113)formula (113)formula (113)formula (113)717GeneralGeneralCNGeneralGeneralHHHHp-Hformula (113)formula (113)formula (113)formula (113)CH3C6H4718GeneralGeneralCNGeneralGeneralHHHH2,4,6-Hformula (113)formula (113)formula (113)formula (113)(CH3)3C6H2719GeneralGeneralCNGeneralGeneralHHHHp-Hformula (113)formula (113)formula (113)formula (113)CH3OC6H4720GeneralGeneralCNGeneralGeneralHHHHp-Hformula (113)formula (113)formula (113)formula (113)(CH3)2NC6H4721GeneralGeneralCNGeneralGeneralHHHHp-Hformula (113)formula (113)formula (113)formula (113)FC6H4722GeneralGeneralCNGeneralGeneralHHHHp-Hformula (113)formula (113)formula (113)formula (113)CNC6H4723GeneralGeneralCNGeneralGeneralHHHHHCH3formula (113)formula (113)formula (113)formula (113)724GeneralGeneralCNGeneralGeneralHHHHHCH3Oformula (113)formula (113)formula (113)formula (113)725GeneralGeneralCNGeneralGeneralHHHHHt-C4H9formula (113)formula (113)formula (113)formula (113)726GeneralGeneralCNGeneralGeneralHHHHHClformula (113)formula (113)formula (113)formula (113)727GeneralGeneralCNGeneralGeneralHHHHHFformula (113)formula (113)formula (113)formula (113)728GeneralGeneralCNGeneralGeneralHHHHHC6H5formula (113)formula (113)formula (113)formula (113)729GeneralGeneralCNGeneralGeneralHHHHHp-formula (113)formula (113)formula (113)formula (113)CH3C6H4730GeneralGeneralCNGeneralGeneralHHHHH2,4,6-formula (113)formula (113)formula (113)formula (113)(CH3)3C6H2731GeneralGeneralCNGeneralGeneralHHHHHp-formula (113)formula (113)formula (113)formula (113)CH3OC6H4732GeneralGeneralCNGeneralGeneralHHHHHp-formula (113)formula (113)formula (113)formula (113)(CH3)2NC6H4733GeneralGeneralCNGeneralGeneralHHHHHp-formula (113)formula (113)formula (113)formula (113)FC6H4734GeneralGeneralCNGeneralGeneralHHHHHp-formula (113)formula (113)formula (113)formula (113)CNC6H4735GeneralGeneralCNGeneralHHHHHHHformula (113)formula (113)formula (113)736GeneralGeneralCNHGeneralHHHHHHformula (113)formula (113)formula (113)737GeneralGeneralCNHHHHHHHHformula (113)formula (113)738GeneralHCNGeneralHHHHHHHformula (113)formula (113)739HGeneralCNGeneralHHHHHHHformula (113)formula (113)740GeneralHCNHHHHHHHHformula (113)741GeneralGeneralCNGeneralFHHHHHHformula (113)formula (113)formula (113)742GeneralGeneralCNFGeneralHHHHHHformula (113)formula (113)formula (113)743GeneralGeneralCNFFHHHHHHformula (113)formula (113)744GeneralFCNGeneralFHHHHHHformula (113)formula (113)745FGeneralCNGeneralFHHHHHHformula (113)formula (113)746GeneralFCNFFHHHHHHformula (113)747GeneralGeneralCNGeneralOHHHHHHHformula (113)formula (113)formula (113)748GeneralGeneralCNOHGeneralHHHHHHformula (113)formula (113)formula (113)749GeneralGeneralCNOHOHHHHHHHformula (113)formula (113)750GeneralOHCNGeneralOHHHHHHHformula (113)formula (113)751OHGeneralCNGeneralOHHHHHHHformula (113)formula (113)752GeneralOHCNOHOHHHHHHHformula (113) TABLE 4-2Com-poundGeneral formula (1)General formula (113)No.R1R2R3R4R5R41R42R43R44R45R46753GeneralGeneralCNClGeneralHHHHHHformula (113)formula (113)formula (113)754GeneralGeneralCNClGeneralHHCH3HHHformula (113)formula (113)formula (113)755GeneralGeneralCNClGeneralHHCH3OHHHformula (113)formula (113)formula (113)756GeneralGeneralCNClGeneralHHt-C4H9HHHformula (113)formula (113)formula (113)757GeneralGeneralCNClGeneralHHClHHHformula (113)formula (113)formula (113)758GeneralGeneralCNClGeneralHHFHHHformula (113)formula (113)formula (113)759GeneralGeneralCNFGeneralHHHHHHformula (113)formula (113)formula (113)760GeneralGeneralCNFGeneralHHCH3HHHformula (113)formula (113)formula (113)761GeneralGeneralCNFGeneralHHCH3OHHHformula (113)formula (113)formula (113)762GeneralGeneralCNFGeneralHHt-C4H9HHHformula (113)formula (113)formula (113)763GeneralGeneralCNFGeneralHHClHHHformula (113)formula (113)formula (113)764GeneralGeneralCNFGeneralHHFHHHformula (113)formula (113)formula (113)765GeneralGeneralCNCH3OGeneralHHHHHHformula (113)formula (113)formula (113)766GeneralGeneralCNCH3OGeneralHHCH3HHHformula (113)formula (113)formula (113)767GeneralGeneralCNCH3OGeneralHHCH3OHHHformula (113)formula (113)formula (113)768GeneralGeneralCNCH3OGeneralHHt-C4H9HHHformula (113)formula (113)formula (113)769GeneralGeneralCNCH3OGeneralHHClHHHformula (113)formula (113)formula (113)770GeneralGeneralCNCH3OGeneralHHFHHHformula (113)formula (113)formula (113)771GeneralGeneralCNC2H5OGeneralHHHHHHformula (113)formula (113)formula (113)772GeneralGeneralCNC2H5OGeneralHHCH3HHHformula (113)formula (113)formula (113)773GeneralGeneralCNC2H5OGeneralHHCH3OHHHformula (113)formula (113)formula (113)774GeneralGeneralCNC2H5OGeneralHHt-C4H9HHHformula (113)formula (113)formula (113)775GeneralGeneralCNC2H5OGeneralHHClHHHformula (113)formula (113)formula (113)776GeneralGeneralCNC2H5OGeneralHHFHHHformula (113)formula (113)formula (113)777GeneralGeneralCNC6H5OGeneralHHHHHHformula (113)formula (113)formula (113)778GeneralGeneralCNC6H5OGeneralHHCH3HHHformula (113)formula (113)formula (113)779GeneralGeneralCNC6H5OGeneralHHCH3OHHHformula (113)formula (113)formula (113)780GeneralGeneralCNC6H5OGeneralHHt-C4H9HHHformula (113)formula (113)formula (113)781GeneralGeneralCNC6H5OGeneralHHClHHHformula (113)formula (113)formula (113)782GeneralGeneralCNC6H5OGeneralHHFHHHformula (113)formula (113)formula (113)783GeneralGeneralCNFormula (121)GeneralHHHHHHformula (113)formula (113)formula (113)784GeneralGeneralCNFormula (121)GeneralHHCH3HHHformula (113)formula (113)formula (113)785GeneralGeneralCNFormula (121)GeneralHHCH3OHHHformula (113)formula (113)formula (113)786GeneralGeneralCNFormula (121)GeneralHHt-C4H9HHHformula (113)formula (113)formula (113)787GeneralGeneralCNFormula (121)GeneralHHClHHHformula (113)formula (113)formula (113)788GeneralGeneralCNFormula (121)GeneralHHFHHHformula (113)formula (113)formula (113)789GeneralGeneralCNFormula (122)GeneralHHHHHHformula (113)formula (113)formula (113)790GeneralGeneralCNFormula (122)GeneralHHCH3HHHformula (113)formula (113)formula (113)791GeneralGeneralCNFormula (122)GeneralHHCH3OHHHformula (113)formula (113)formula (113)792GeneralGeneralCNFormula (122)GeneralHHt-C4H9HHHformula (113)formula (113)formula (113)793GeneralGeneralCNFormula (122)GeneralHHClHHHformula (113)formula (113)formula (113)794GeneralGeneralCNFormula (122)GeneralHHFHHHformula (113)formula (113)formula (113)795GeneralGeneralCNFormula (123)GeneralHHHHHHformula (113)formula (113)formula (113)796GeneralGeneralCNFormula (123)GeneralHHCH3HHHformula (113)formula (113)formula (113)797GeneralGeneralCNFormula (123)GeneralHHCH3OHHHformula (113)formula (113)formula (113)798GeneralGeneralCNFormula (123)GeneralHHt-C4H9HHHformula (113)formula (113)formula (113)799GeneralGeneralCNFormula (123)GeneralHHClHHHformula (113)formula (113)formula (113)800GeneralGeneralCNFormula (123)GeneralHHFHHHformula (113)formula (113)formula (113)801GeneralGeneralCNFormula (124)GeneralHHHHHHformula (113)formula (113)formula (113)802GeneralGeneralCNFormula (124)GeneralHHCH3HHHformula (113)formula (113)formula (113)803GeneralGeneralCNFormula (124)GeneralHHCH3OHHHformula (113)formula (113)formula (113)804GeneralGeneralCNFormula (124)GeneralHHt-C4H9HHHformula (113)formula (113)formula (113)805GeneralGeneralCNFormula (124)GeneralHHClHHHformula (113)formula (113)formula (113)806GeneralGeneralCNFormula (124)GeneralHHFHHHformula (113)formula (113)formula (113) TABLE 5-1General formula (114)Com-R51, R56,poundGeneral formula (1)R58, R60,No.R1R2R3R4R5R52R53R54R55R57R59R61R62901GeneralGeneralCNGeneralGeneralHHHHHHHHformulaformulaformulaformula(114)(114)(114)(114)902GeneralGeneralCNGeneralGeneralCH3HHHHHHHformulaformulaformulaformula(114)(114)(114)(114)903GeneralGeneralCNGeneralGeneralCH3OHHHHHHHformulaformulaformulaformula(114)(114)(114)(114)904GeneralGeneralCNGeneralGeneralHCH3HHHHHHformulaformulaformulaformula(114)(114)(114)(114)905GeneralGeneralCNGeneralGeneralHCH3OHHHHHHformulaformulaformulaformula(114)(114)(114)(114)906GeneralGeneralCNGeneralGeneralHt-C4H9HHHHHHformulaformulaformulaformula(114)(114)(114)(114)907GeneralGeneralCNGeneralGeneralHClHHHHHHformulaformulaformulaformula(114)(114)(114)(114)908GeneralGeneralCNGeneralGeneralHFHHHHHHformulaformulaformulaformula(114)(114)(114)(114)909GeneralGeneralCNGeneralGeneralHHCH3HHHHHformulaformulaformulaformula(114)(114)(114)(114)910GeneralGeneralCNGeneralGeneralHHCH3OHHHHHformulaformulaformulaformula(114)(114)(114)(114)911GeneralGeneralCNGeneralGeneralHHHCH3HHHHformulaformulaformulaformula(114)(114)(114)(114)912GeneralGeneralCNGeneralGeneralHHHCH3OHHHHformulaformulaformulaformula(114)(114)(114)(114)913GeneralGeneralCNGeneralGeneralHHHHCH3HHHformulaformulaformulaformula(114)(114)(114)(114)914GeneralGeneralCNGeneralGeneralHHHHCH3OHHHformulaformulaformulaformula(114)(114)(114)(114)915GeneralGeneralCNGeneralGeneralHHHHHCH3HHformulaformulaformulaformula(114)(114)(114)(114)916GeneralGeneralCNGeneralGeneralHHHHHCH3OHHformulaformulaformulaformula(114)(114)(114)(114)917GeneralGeneralCNGeneralGeneralHHHHHHCH3Hformulaformulaformulaformula(114)(114)(114)(114)918GeneralGeneralCNGeneralGeneralHHHHHHCH3OHformulaformulaformulaformula(114)(114)(114)(114)919GeneralGeneralCNGeneralHHHHHHHHHformulaformulaformula(114)(114)(114)920GeneralGeneralCNHGeneralHHHHHHHHformulaformulaformula(114)(114)(114)921GeneralGeneralCNHHHHHHHHHHformulaformula(114)(114)922GeneralHCNGeneralHHHHHHHHHformulaformula(114)(114)923HGeneralCNGeneralHHHHHHHHHformulaformula(114)(114)924GeneralHCNHHHHHHHHHHformula(114)925GeneralGeneralCNGeneralFHHHHHHHHformulaformulaformula(114)(114)(114)926GeneralGeneralCNFGeneralHHHHHHHHformulaformulaformula(114)(114)(114)927GeneralGeneralCNFFHHHHHHHHformulaformula(114)(114)928GeneralFCNGeneralFHHHHHHHHformulaformula(114)(114)929FGeneralCNGeneralFHHHHHHHHformulaformula(114)(114)930GeneralFCNFFHHHHHHHHformula(114)931GeneralGeneralCNGeneralOHHHHHHHHHformulaformulaformula(114)(114)(114)932GeneralGeneralCNOHGeneralHHHHHHHHformulaformulaformula(114)(114)(114)933GeneralGeneralCNOHOHHHHHHHHHformulaformula(114)(114)934GeneralOHCNGeneralOHHHHHHHHHformulaformula(114)(114)935OHGeneralCNGeneralOHHHHHHHHHformulaformula(114)(114)936GeneralOHCNOHOHHHHHHHHHformula(114)937GeneralGeneralCNClGeneralHHHHHHHHformulaformulaformula(114)(114)(114)938GeneralGeneralCNClGeneralHCH3HHHHHHformulaformulaformula(114)(114)(114)939GeneralGeneralCNClGeneralHCH3OHHHHHHformulaformulaformula(114)(114)(114)940GeneralGeneralCNClGeneralHt-C4H9HHHHHHformulaformulaformula(114)(114)(114)941GeneralGeneralCNClGeneralHClHHHHHHformulaformulaformula(114)(114)(114)942GeneralGeneralCNClGeneralHFHHHHHHformulaformulaformula(114)(114)(114)943GeneralGeneralCNFGeneralHHHHHHHHformulaformulaformula(114)(114)(114)944GeneralGeneralCNFGeneralHCH3HHHHHHformulaformulaformula(114)(114)(114) TABLE 5-2General formula (114)Com-R51, R56,poundGeneral formula (1)R58, R60,No.R1R2R3R4R5R52R53R54R55R57R59R61R62945GeneralGeneralCNFGeneralHCH3OHHHHHHformula (114)formula (114)formula (114)946GeneralGeneralCNFGeneralHt-C4H9HHHHHHformula (114)formula (114)formula (114)947GeneralGeneralCNFGeneralHClHHHHHHformula (114)formula (114)formula (114)948GeneralGeneralCNFGeneralHFHHHHHHformula (114)formula (114)formula (114)949GeneralGeneralCNCH3OGeneralHHHHHHHHformula (114)formula (114)formula (114)950GeneralGeneralCNCH3OGeneralHCH3HHHHHHformula (114)formula (114)formula (114)951GeneralGeneralCNCH3OGeneralHCH3OHHHHHHformula (114)formula (114)formula (114)952GeneralGeneralCNCH3OGeneralHt-C4H9HHHHHHformula (114)formula (114)formula (114)953GeneralGeneralCNCH3OGeneralHClHHHHHHformula (114)formula (114)formula (114)954GeneralGeneralCNCH3OGeneralHFHHHHHHformula (114)formula (114)formula (114)955GeneralGeneralCNC2H5OGeneralHHHHHHHHformula (114)formula (114)formula (114)956GeneralGeneralCNC2H5OGeneralHCH3HHHHHHformula (114)formula (114)formula (114)957GeneralGeneralCNC2H5OGeneralHCH3OHHHHHHformula (114)formula (114)formula (114)958GeneralGeneralCNC2H5OGeneralHt-C4H9HHHHHHformula (114)formula (114)formula (114)959GeneralGeneralCNC2H5OGeneralHClHHHHHHformula (114)formula (114)formula (114)960GeneralGeneralCNC2H5OGeneralHFHHHHHHformula (114)formula (114)formula (114)961GeneralGeneralCNC6H5OGeneralHHHHHHHHformula (114)formula (114)formula (114)962GeneralGeneralCNC6H5OGeneralHCH3HHHHHHformula (114)formula (114)formula (114)963GeneralGeneralCNC6H5OGeneralHCH3OHHHHHHformula (114)formula (114)formula (114)964GeneralGeneralCNC6H5OGeneralHt-C4H9HHHHHHformula (114)formula (114)formula (114)965GeneralGeneralCNC6H5OGeneralHClHHHHHHformula (114)formula (114)formula (114)966GeneralGeneralCNC6H5OGeneralHFHHHHHHformula (114)formula (114)formula (114)967GeneralGeneralCNFormula (121)GeneralHHHHHHHHformula (114)formula (114)formula (114)968GeneralGeneralCNFormula (121)GeneralHCH3HHHHHHformula (114)formula (114)formula (114)969GeneralGeneralCNFormula (121)GeneralHCH3OHHHHHHformula (114)formula (114)formula (114)970GeneralGeneralCNFormula (121)GeneralHt-C4H9HHHHHHformula (114)formula (114)formula (114)971GeneralGeneralCNFormula (121)GeneralHClHHHHHHformula (114)formula (114)formula (114)972GeneralGeneralCNFormula (121)GeneralHFHHHHHHformula (114)formula (114)formula (114)973GeneralGeneralCNFormula (122)GeneralHHHHHHHHformula (114)formula (114)formula (114)974GeneralGeneralCNFormula (122)GeneralHCH3HHHHHHformula (114)formula (114)formula (114)975GeneralGeneralCNFormula (122)GeneralHCH3OHHHHHHformula (114)formula (114)formula (114)976GeneralGeneralCNFormula (122)GeneralHt-C4H9HHHHHHformula (114)formula (114)formula (114)977GeneralGeneralCNFormula (122)GeneralHClHHHHHHformula (114)formula (114)formula (114)978GeneralGeneralCNFormula (122)GeneralHFHHHHHHformula (114)formula (114)formula (114)989GeneralGeneralCNFormula (123)GeneralHHHHHHHHformula (114)formula (114)formula (114)980GeneralGeneralCNFormula (123)GeneralHCH3HHHHHHformula (114)formula (114)formula (114)981GeneralGeneralCNFormula (123)GeneralHCH3OHHHHHHformula (114)formula (114)formula (114)982GeneralGeneralCNFormula (123)GeneralHt-C4H9HHHHHHformula (114)formula (114)formula (114)983GeneralGeneralCNFormula (123)GeneralHClHHHHHHformula (114)formula (114)formula (114)984GeneralGeneralCNFormula (123)GeneralHFHHHHHHformula (114)formula (114)formula (114)985GeneralGeneralCNFormula (124)GeneralHHHHHHHHformula (114)formula (114)formula (114)986GeneralGeneralCNFormula (124)GeneralHCH3HHHHHHformula (114)formula (114)formula (114)987GeneralGeneralCNFormula (124)GeneralHCH3OHHHHHHformula (114)formula (114)formula (114)988GeneralGeneralCNFormula (124)GeneralHt-C4H9HHHHHHformula (114)formula (114)formula (114)989GeneralGeneralCNFormula (124)GeneralHClHHHHHHformula (114)formula (114)formula (114)990GeneralGeneralCNFormula (124)GeneralHFHHHHHHformula (114)formula (114)formula (114) TABLE 6-1CompoundGeneral formula (1)General formula (115)No.R1R2R3R4R5R71, R80R72, R79R73, R78R74, R77R75, R761001GeneralGeneralCNGeneralGeneralHHHHHformula (115)formula (115)formula (115)formula (115)1002GeneralGeneralCNGeneralGeneralHCH3HHHformula (115)formula (115)formula (115)formula (115)1003GeneralGeneralCNGeneralGeneralHCH3OHHHformula (115)formula (115)formula (115)formula (115)1004GeneralGeneralCNGeneralGeneralHC6H5HHHformula (115)formula (115)formula (115)formula (115)1005GeneralGeneralCNGeneralGeneralHCH3HCH3Hformula (115)formula (115)formula (115)formula (115)1006GeneralGeneralCNGeneralGeneralHCH3OHCH3OHformula (115)formula (115)formula (115)formula (115)1007GeneralGeneralCNGeneralGeneralHC6H5HC6H5Hformula (115)formula (115)formula (115)formula (115)1008GeneralGeneralCNGeneralGeneralHHCH3HHformula (115)formula (115)formula (115)formula (115)1009GeneralGeneralCNGeneralGeneralHHCH3OHHformula (115)formula (115)formula (115)formula (115)1010GeneralGeneralCNGeneralGeneralHHt-C4H9HHformula (115)formula (115)formula (115)formula (115)1011GeneralGeneralCNGeneralGeneralHHClHHformula (115)formula (115)formula (115)formula (115)1012GeneralGeneralCNGeneralGeneralHHFHHformula (115)formula (115)formula (115)formula (115)1013GeneralGeneralCNGeneralGeneralHHC6H5HHformula (115)formula (115)formula (115)formula (115)1014GeneralGeneralCNGeneralGeneralHHp-C6H5—C6H4HHformula (115)formula (115)formula (115)formula (115)1015GeneralGeneralCNGeneralHHHHHHformula (115)formula (115)formula (115)1016GeneralGeneralCNHGeneralHHHHHformula (115)formula (115)formula (115)1017GeneralGeneralCNHHHHHHHformula (115)formula (115)1018GeneralHCNGeneralHHHHHHformula (115)formula (115)1019HGeneralCNGeneralHHHHHHformula (115)formula (115)1020GeneralHCNHHHHHHHformula (115)1021GeneralGeneralCNGeneralFHHHHHformula (115)formula (115)formula (115)1022GeneralGeneralCNFGeneralHHHHHformula (115)formula (115)formula (115)1023GeneralGeneralCNFFHHHHHformula (115)formula (115)1024GeneralFCNGeneralFHHHHHformula (115)formula (115)1025FGeneralCNGeneralFHHHHHformula (115)formula (115)1026GeneralFCNFFHHHHHformula (115)1027GeneralGeneralCNGeneralOHHHHHHformula (115)formula (115)formula (115)1028GeneralGeneralCNOHGeneralHHHHHformula (115)formula (115)formula (115)1029GeneralGeneralCNOHOHHHHHHformula (115)formula (115)1030GeneralOHCNGeneralOHHHHHHformula (115)formula (115)1031OHGeneralCNGeneralOHHHHHHformula (115)formula (115)1032GeneralOHCNOHOHHHHHHformula (115)1033GeneralGeneralCNClGeneralHHHHHformula (115)formula (115)formula (115)1034GeneralGeneralCNClGeneralHHCH3HHformula (115)formula (115)formula (115)1035GeneralGeneralCNClGeneralHHCH3OHHformula (115)formula (115)formula (115)1036GeneralGeneralCNClGeneralHHt-C4H9HHformula (115)formula (115)formula (115)1037GeneralGeneralCNClGeneralHHClHHformula (115)formula (115)formula (115)1038GeneralGeneralCNClGeneralHHFHHformula (115)formula (115)formula (115)1039GeneralGeneralCNFGeneralHHHHHformula (115)formula (115)formula (115)1040GeneralGeneralCNFGeneralHHCH3HHformula (115)formula (115)formula (115)1041GeneralGeneralCNFGeneralHHCH3OHHformula (115)formula (115)formula (115)1042GeneralGeneralCNFGeneralHHt-C4H9HHformula (115)formula (115)formula (115)1043GeneralGeneralCNFGeneralHHClHHformula (115)formula (115)formula (115) TABLE 6-2CompoundGeneral formula (1)General formula (115)No.R1R2R3R4R5R71, R80R72, R79R73, R78R74, R77R75, R761044GeneralGeneralCNFGeneralHHFHHformula (115)formula (115)formula (115)1045GeneralGeneralCNCH3OGeneralHHHHHformula (115)formula (115)formula (115)1046GeneralGeneralCNCH3OGeneralHHCH3HHformula (115)formula (115)formula (115)1047GeneralGeneralCNCH3OGeneralHHCH3OHHformula (115)formula (115)formula (115)1048GeneralGeneralCNCH3OGeneralHHt-C4H9HHformula (115)formula (115)formula (115)1049GeneralGeneralCNCH3OGeneralHHClHHformula (115)formula (115)formula (115)1050GeneralGeneralCNCH3OGeneralHHFHHformula (115)formula (115)formula (115)1051GeneralGeneralCNC2H5OGeneralHHHHHformula (115)formula (115)formula (115)1052GeneralGeneralCNC2H5OGeneralHHCH3HHformula (115)formula (115)formula (115)1053GeneralGeneralCNC2H5OGeneralHHCH3OHHformula (115)formula (115)formula (115)1054GeneralGeneralCNC2H5OGeneralHHt-C4H9HHformula (115)formula (115)formula (115)1055GeneralGeneralCNC2H5OGeneralHHClHHformula (115)formula (115)formula (115)1056GeneralGeneralCNC2H5OGeneralHHFHHformula (115)formula (115)formula (115)1057GeneralGeneralCNC6H5OGeneralHHHHHformula (115)formula (115)formula (115)1058GeneralGeneralCNC6H5OGeneralHHCH3HHformula (115)formula (115)formula (115)1059GeneralGeneralCNC6H5OGeneralHHCH3OHHformula (115)formula (115)formula (115)1060GeneralGeneralCNC6H5OGeneralHHt-C4H9HHformula (115)formula (115)formula (115)1061GeneralGeneralCNC6H5OGeneralHHClHHformula (115)formula (115)formula (115)1062GeneralGeneralCNC6H5OGeneralHHFHHformula (115)formula (115)formula (115)1063GeneralGeneralCNFormula (121)GeneralHHHHHformula (115)formula (115)formula (115)1064GeneralGeneralCNFormula (121)GeneralHHCH3HHformula (115)formula (115)formula (115)1065GeneralGeneralCNFormula (121)GeneralHHCH3OHHformula (115)formula (115)formula (115)1066GeneralGeneralCNFormula (121)GeneralHHt-C4H9HHformula (115)formula (115)formula (115)1067GeneralGeneralCNFormula (121)GeneralHHClHHformula (115)formula (115)formula (115)1068GeneralGeneralCNFormula (121)GeneralHHFHHformula (115)formula (115)formula (115)1069GeneralGeneralCNFormula (122)GeneralHHHHHformula (115)formula (115)formula (115)1070GeneralGeneralCNFormula (122)GeneralHHCH3HHformula (115)formula (115)formula (115)1071GeneralGeneralCNFormula (122)GeneralHHCH3OHHformula (115)formula (115)formula (115)1072GeneralGeneralCNFormula (122)GeneralHHt-C4H9HHformula (115)formula (115)formula (115)1073GeneralGeneralCNFormula (122)GeneralHHClHHformula (115)formula (115)formula (115)1074GeneralGeneralCNFormula (122)GeneralHHFHHformula (115)formula (115)formula (115)1075GeneralGeneralCNFormula (123)GeneralHHHHHformula (115)formula (115)formula (115)1076GeneralGeneralCNFormula (123)GeneralHHCH3HHformula (115)formula (115)formula (115)1077GeneralGeneralCNFormula (123)GeneralHHCH3OHHformula (115)formula (115)formula (115)1078GeneralGeneralCNFormula (123)GeneralHHt-C4H9HHformula (115)formula (115)formula (115)1079GeneralGeneralCNFormula (123)GeneralHHClHHformula (115)formula (115)formula (115)1080GeneralGeneralCNFormula (123)GeneralHHFHHformula (115)formula (115)formula (115)1081GeneralGeneralCNFormula (124)GeneralHHHHHformula (115)formula (115)formula (115)1082GeneralGeneralCNFormula (124)GeneralHHCH3HHformula (115)formula (115)formula (115)1083GeneralGeneralCNFormula (124)GeneralHHCH3OHHformula (115)formula (115)formula (115)1084GeneralGeneralCNFormula (124)GeneralHHt-C4H9HHformula (115)formula (115)formula (115)1085GeneralGeneralCNFormula (124)GeneralHHClHHformula (115)formula (115)formula (115)1086GeneralGeneralCNFormula (124)GeneralHHFHHformula (115)formula (115)formula (115) Examples of the preferred light emitting material capable of emitting delayed fluorescent light include the following compounds. (1) A compound represented by the following general formula (131): wherein in the general formula (131), from 0 to 1 of R1to R5represents a cyano group, from 1 to 5 of R1to R5each represent a group represented by the following general formula (132), and the balance of R1to R5each represent a hydrogen atom or a substituent other than the above, wherein in the general formula (132), R11to R20each independently represent a hydrogen atom or a substituent, in which R11and R12, R12and R13, R13and R14, R14end R15, R15and R16, R16and R17, R17and R18, R18and R19, and R19and R20each may be bonded to each other to forma ring structure; and L12represents a substituted or unsubstituted arylene group or a substituted or unsubstituted heteroarylene group. (2) The compound according to the item (1), wherein the group represented by the general formula (132) is a group represented by anyone of the following general formulae (133) to (138): wherein in the general formulae (133) to (138), R21to R24, R27to R38, R41to R48, R51to R58, R61to R65, R71to R79, R81to R90each independently represent a hydrogen atom or a substituent, in which R21and R22, R22and R23, R23and R24, R27and R28, R28and R29, R29and R30, R31and R32, R32and R33, R33and R34, R35and R36, R36and R37, R37and R38, R41and R42, R42and R43, R43and R44, R45and R46, R46and R47, R47and R48, R51and R52, R52and R53, R53and R54, R55and R56, R56and R57, R57and R58, R61and R62, R62and R63, R63and R64, R64and R65, R54and R61, R55and R65, R71and R72, R72and R73, R73and R74, R74and R75, R76and R77, R77and R78, R78and R79, R81and R82, R82and R83, R83and R84, R85and R84, R86and R87, R87and R88, and R89and R90each may be bonded to each other to form a ring structure; and L13to L18each independently represent a substituted or unsubstituted arylene group or a substituted or unsubstituted heteroarylene group. (3) The confound according to the item (1) or (2), wherein in the general formula (131), R3represents a cyano group. (4) The compound according to any one of the items (1) to (3), wherein in the general formula (131), R1and R4each represent a group represented by the general formula (132). (5) The compound according to any one of the items (1) to (4), wherein in the general formula (132), L12represents a phenylene group. (6) The compound according to any one of the items (1) to (5), wherein the group represented by the general formula (132) is a group represented by the general formula (133). (7) The compound according to the item (6), wherein in the general formula (133), L13represents a 1,3-phenylene group. (8) The compound according to any one of the items (1) to (5), wherein the group represented by the general formula (132) is a group represented by the general formula (134). (9) The compound according to the item (8), wherein in the general formula (134), L14represents a 1,4-phenylene group. (10) The compound according to any one of the items (1) to (5), wherein the group represented by the general formula (132) is a group represented by the general formula (138). (11) The compound according to the item (10), wherein in the general formula (132), L18represents a 1,4-phenylene group. Examples of the compound include the following compounds. Examples of the preferred light emitting material include compounds represented by the following general formula (141). The entire description of WO 2013/011954 including the paragraphs 0007 to 0047 and 0073 to 0085 is incorporated herein by reference. wherein in the general formula (141), R1, R2, R3, R4, R5, R6, R7, R8and R17each independently represent a hydrogen atom or an electron donating group, provided that at least one thereof represents an electron donating group; R9, R10, R11, R12, R13, R14, R15and R16each independently represent a hydrogen atom or an electron withdrawing group having no unshared electron pair at the α-position; and Z represents a single bond or >C═Y, wherein Y represents O, S, C(CN)2or C(COOH)2, provided that when Z represents a single bond, at least one of R9, R10, R11, R12, R13, R14, R15and R16represents an electron withdrawing group having no unshared electron pair at the α-position. Specific examples of the compounds include the compounds shown in the following tables. In the tables, D1 to D3 represent the following aryl groups substituted toy an electron donating group, respectively; A1 to A5 represent the following electron withdrawing groups, respectively; H represents a hydrogen atom; and Ph represents a phenyl group. TABLE 7CompoundOtherNo.R2R7R10R15R17ZRs2001HHA1A1Phsingle bondH2002HD1A1A1Phsingle bondH2003HD2A1A1Phsingle bondH2004HD3A1A1Phsingle bondH2005HHA2A2Phsingle bondH2006HD1A2A2Phsingle bondH2007HD2A2A2Phsingle bondH2008HD3A2A2Phsingle bondH2009HHA3A3Phsingle bondH2010HD1A3A3Phsingle bondH2011HD2A3A3Phsingle bondH2012HD3A3A3Phsingle bondH2013HHA4A4Phsingle bondH2014HD1A4A4Phsingle bondH2015HD2A4A4Phsingle bondH2016HD3A4A4Phsingle bondH2017HHA5A5Phsingle bondH2018HD1A5A5Phsingle bondH2019HD2A5A5Phsingle bondH2020HD3A5A5Phsingle bondH2021D1D1A1A1Phsingle bondH2022D2D2A1A1Phsingle bondH2023D3D3A1A1Phsingle bondH2024D1D1A2A2Phsingle bondH2025D2D2A2A2Phsingle bondH2026D3D3A2A2Phsingle bondH2027D1D1A3A3Phsingle bondH2028D2D2A3A3Phsingle bondH2029D3D3A3A3Phsingle bondH2030D1D1A4A4Phsingle bondH2031D2D2A4A4Phsingle bondH2032D3D3A4A4Phsingle bondH2033D1D1A5A5Phsingle bondH2034D2D2A5A5Phsingle bondH2035D3D3A5A5Phsingle bondH TABLE 8CompoundOtherNo.R3R6R11R14R17ZRs2036HHHA1Phsingle bondH2037HD1HA1Phsingle bondH2038HD2HA1Phsingle bondH2039HD3HA1Phsingle bondH2040HHHA2Phsingle bondH2041HD1HA2Phsingle bondH2042HD2HA2Phsingle bondH2043HD3HA2Phsingle bondH2044HHHA3Phsingle bondH2045HD1HA3Phsingle bondH2046HD2HA3Phsingle bondH2047HD3HA3Phsingle bondH2048HHHA4Phsingle bondH2049HD1HA4Phsingle bondH2050HD2HA4Phsingle bondH2051HD3HA4Phsingle bondH2052HHHA5Phsingle bondH2053HD1HA5Phsingle bondH2054HD2HA5Phsingle bondH2055HD3HA5Phsingle bondH2056D1D1HA1Phsingle bondH2057D2D2HA1Phsingle bondH2058D3D3HA1Phsingle bondH2059D1D1HA2Phsingle bondH2060D2D2HA2Phsingle bondH2061D3D3HA2Phsingle bondH2062D1D1HA3Phsingle bondH2063D2D2HA3Phsingle bondH2064D3D3HA3Phsingle bondH2065D1D1HA4Phsingle bondH2066D2D2HA4Phsingle bondH2067D3D3HA4Phsingle bondH2068D1D1HA5Phsingle bondH2069D2D2HA5Phsingle bondH2070D3D3HA5Phsingle bondH TABLE 9CompoundOtherNo.R2R7R10R15R17ZRs2071HHA1A1PhC═OH2072HD1A1A1PhC═OH2073HD2A1A1PhC═OH2074HD3A1A1PhC═OH2075HHA2A2PhC═OH2076HD1A2A2PhC═OH2077HD2A2A2PhC═OH2078HD3A2A2PhC═OH2079HHA3A3PhC═OH2080HD1A3A3PhC═OH2081HD2A3A3PhC═OH2082HD3A3A3PhC═OH2083HHA4A4PhC═OH2084HD1A4A4PhC═OH2085HD2A4A4PhC═OH2086HD3A4A4PhC═OH2087HHA5A5PhC═OH2088HD1A5A5PhC═OH2089HD2A5A5PhC═OH2090HD3A5A5PhC═OH2091D1D1A1A1PhC═OH2092D2D2A1A1PhC═OH2093D3D3A1A1PhC═OH2094D1D1A2A2PhC═OH2095D2D2A2A2PhC═OH2096D3D3A2A2PhC═OH2097D1D1A3A3PhC═OH2098D2D2A3A3PhC═OH2099D3D3A3A3PhC═OH2100D1D1A4A4PhC═OH2101D2D2A4A4PhC═OH2102D3D3A4A4PhC═OH2103D1D1A5A5PhC═OH2104D2D2A5A5PhC═OH2105D3D3A5A5PhC═OH TABLE 10CompoundOtherNo.R3R6R11R14R17ZRs2106HHHA1PhC═OH2107HD1HA1PhC═OH2108HD2HA1PhC═OH2109HD3HA1PhC═OH2110HHHA2PhC═OH2111HD1HA2PhC═OH2112HD2HA2PhC═OH2113HD3HA2PhC═OH2114HHHA3PhC═OH2115HD1HA3PhC═OH2116HD2HA3PhC═OH2117HD3HA3PhC═OH2118HHHA4PhC═OH2119HD1HA4PhC═OH2120HD2HA4PhC═OH2121HD3HA4PhC═OH2122HHHA5PhC═OH2123HD1HA5PhC═OH2124HD2HA5PhC═OH2125HD3HA5PhC═OH2126D1D1HA1PhC═OH2127D2D2HA1PhC═OH2128D3D3HA1PhC═OH2129D1D1HA2PhC═OH2130D2D2HA2PhC═OH2131D3D3HA2PhC═OH2132D1D1HA3PhC═OH2133D2D2HA3PhC═OH2134D3D3HA3PhC═OH2135D1D1HA4PhC═OH2136D2D2HA4PhC═OH2137D3D3HA4PhC═OH2138D1D1HA5PhC═OH2139D2D2HA5PhC═OH2140D3D3HA5PhC═OH2141HHHHPhC═OH TABLE 11CompoundOtherNo.R2R7R10R15R17ZRs2142HHA1A1PhC═SH2143HD1A1A1PhC═SH2144HD2A1A1PhC═SH2145HD3A1A1PhC═SH2146HHA2A2PhC═SH2147HD1A2A2PhC═SH2148HD2A2A2PhC═SH2149HD3A2A2PhC═SH2150HHA3A3PhC═SH2151HD1A3A3PhC═SH2152HD2A3A3PhC═SH2153HD3A3A3PhC═SH2154HHA4A4PhC═SH2155HD1A4A4PhC═SH2156HD2A4A4PhC═SH2157HD3A4A4PhC═SH2158HHA5A5PhC═SH2159HD1A5A5PhC═SH2160HD2A5A5PhC═SH2161HD3A5A5PhC═SH2162D1D1A1A1PhC═SH2163D2D2A1A1PhC═SH2164D3D3A1A1PhC═SH2165D1D1A2A2PhC═SH2166D2D2A2A2PhC═SH2167D3D3A2A2PhC═SH2168D1D1A3A3PhC═SH2169D2D2A3A3PhC═SH2170D3D3A3A3PhC═SH2171D1D1A4A4PhC═SH2172D2D2A4A4PhC═SH2173D3D3A4A4PhC═SH2174D1D1A5A5PhC═SH2175D2D2A5A5PhC═SH2176D3D3A5A5PhC═SH TABLE 12CompoundOtherNo.R3R8R11R14R17ZRs2177HHHA1PhC═SH2178HD1HA1PhC═SH2179HD2HA1PhC═SH2180HD3HA1PhC═SH2181HHHA2PhC═SH2182HD1HA2PhC═SH2183HD2HA2PhC═SH2184HD3HA2PhC═SH2185HHHA3PhC═SH2186HD1HA3PhC═SH2187HD2HA3PhC═SH2188HD3HA3PhC═SH2189HHHA4PhC═SH2190HD1HA4PhC═SH2191HD2HA4PhC═SH2192HD3HA4PhC═SH2193HHHA5PhC═SH2194HD1HA5PhC═SH2195HD2HA5PhC═SH2196HD3HA5PhC═SH2197D1D1HA1PhC═SH2198D2D2HA1PhC═SH2199D3D3HA1PhC═SH2200D1D1HA2PhC═SH2201D2D2HA2PhC═SH2202D3D3HA2PhC═SH2203D1D1HA3PhC═SH2204D2D2HA3PhC═SH2205D3D3HA3PhC═SH2206D1D1HA4PhC═SH2207D2D2HA4PhC═SH2208D3D3HA4PhC═SH2209D1D1HA5PhC═SH2210D2D2HA5PhC═SH2211D3D3HA5PhC═SH2212HHHHPhC═SH TABLE 13CompoundOtherNo.R2R7R10R15R17ZRs2213HHA1A1PhC═C(CN)2H2214HD1A1A1PhC═C(CN)2H2215HD2A1A1PhC═C(CN)2H2216HD3A1A1PhC═C(CN)2H2217HHA2A2PhC═C(CN)2H2218HD1A2A2PhC═C(CN)2H2219HD2A2A2PhC═C(CN)2H2220HD3A2A2PhC═C(CN)2H2221HHA3A3PhC═C(CN)2H2222HD1A3A3PhC═C(CN)2H2223HD2A3A3PhC═C(CN)2H2224HD3A3A3PhC═C(CN)2H2225HHA4A4PhC═C(CN)2H2226HD1A4A4PhC═C(CN)2H2227HD2A4A4PhC═C(CN)2H2228HD3A4A4PhC═C(CN)2H2229HHA5A5PhC═C(CN)2H2230HD1A5A5PhC═C(CN)2H2231HD2A5A5PhC═C(CN)2H2232HD3A5A5PhC═C(CN)2H2233D1D1A1A1PhC═C(CN)2H2234D2D2A1A1PhC═C(CN)2H2235D3D3A1A1PhC═C(CN)2H2236D1D1A2A2PhC═C(CN)2H2237D2D2A2A2PhC═C(CN)2H2238D3D3A2A2PhC═C(CN)2H2239D1D1A3A3PhC═C(CN)2H2240D2D2A3A3PhC═C(CN)2H2241D3D3A3A3PhC═C(CN)2H2242D1D1A4A4PhC═C(CN)2H2243D2D2A4A4PhC═C(CN)2H2244D3D3A4A4PhC═C(CN)2H2245D1D1A5A5PhC═C(CN)2H2246D2D2A5A5PhC═C(CN)2H2247D3D3A5A5PhC═C(CN)2H TABLE 14CompoundOtherNo.R3R8R11R14R17ZRs2248HHHA1PhC═C(CN)2H2249HD1HA1PhC═C(CN)2H2250HD2HA1PhC═C(CN)2H2251HD3HA1PhC═C(CN)2H2252HHHA2PhC═C(CN)2H2253HD1HA2PhC═C(CN)2H2254HD2HA2PhC═C(CN)2H2255HD3HA2PhC═C(CN)2H2256HHHA3PhC═C(CN)2H2257HD1HA3PhC═C(CN)2H2258HD2HA3PhC═C(CN)2H2259HD3HA3PhC═C(CN)2H2260HHHA4PhC═C(CN)2H2261HD1HA4PhC═C(CN)2H2262HD2HA4PhC═C(CN)2H2263HD3HA4PhC═C(CN)2H2264HHHA5PhC═C(CN)2H2265HD1HA5PhC═C(CN)2H2266HD2HA5PhC═C(CN)2H2267HD3HA5PhC═C(CN)2H2268D1D1HA1PhC═C(CN)2H2269D2D2HA1PhC═C(CN)2H2270D3D3HA1PhC═C(CN)2H2271D1D1HA2PhC═C(CN)2H2272D2D2HA2PhC═C(CN)2H2273D3D3HA2PhC═C(CN)2H2274D1D1HA3PhC═C(CN)2H2275D2D2HA3PhC═C(CN)2H2276D3D3HA3PhC═C(CN)2H2277D1D1HA4PhC═C(CN)2H2278D2D2HA4PhC═C(CN)2H2279D3D3HA4PhC═C(CN)2H2280D1D1HA5PhC═C(CN)2H2281D2D2HA5PhC═C(CN)2H2282D3D3HA5PhC═C(CN)2H2283HHHHPhC═C(CN)2H TABLE 15CompoundOtherNo.R2R7R10R15R17ZRs2284HHA1A1PhC═C(COOH)2H2285HD1A1A1PhC═C(COOH)2H2286HD2A1A1PhC═C(COOH)2H2287HD3A1A1PhC═C(COOH)2H2288HHA2A2PhC═C(COOH)2H2289HD1A2A2PhC═C(COOH)2H2290HD2A2A2PhC═C(COOH)2H2291HD3A2A2PhC═C(COOH)2H2292HHA3A3PhC═C(COOH)2H2293HD1A3A3PhC═C(COOH)2H2294HD2A3A3PhC═C(COOH)2H2295HD3A3A3PhC═C(COOH)2H2296HHA4A4PhC═C(COOH)2H2297HD1A4A4PhC═C(COOH)2H2298HD2A4A4PhC═C(COOH)2H2299HD3A4A4PhC═C(COOH)2H2300HHA5A5PhC═C(COOH)2H2301HD1A5A5PhC═C(COOH)2H2302HD2A5A5PhC═C(COOH)2H2303HD3A5A5PhC═C(COOH)2H2304D1D1A1A1PhC═C(COOH)2H2305D2D2A1A1PhC═C(COOH)2H2306D3D3A1A1PhC═C(COOH)2H2307D1D1A2A2PhC═C(COOH)2H2308D2D2A2A2PhC═C(COOH)2H2309D3D3A2A2PhC═C(COOH)2H2310D1D1A3A3PhC═C(COOH)2H2311D2D2A3A3PhC═C(COOH)2H2312D3D3A3A3PhC═C(COOH)2H2313D1D1A4A4PhC═C(COOH)2H2314D2D2A4A4PhC═C(COOH)2H2315D3D3A4A4PhC═C(COOH)2H2316D1D1A5A5PhC═C(COOH)2H2317D2D2A5A5PhC═C(COOH)2H2318D3D3A5A5PhC═C(COOH)2H TABLE 16CompoundOtherNo.R3R6R11R14R17ZRs2319HHHA1PhC═C(COOH)2H2320HD1HA1PhC═C(COOH)2H2321HD2HA1PhC═C(COOH)2H2322HD3HA1PhC═C(COOH)2H2323HHHA2PhC═C(COOH)2H2324HD1HA2PhC═C(COOH)2H2325HD2HA2PhC═C(COOH)2H2326HD3HA2PhC═C(COOH)2H2327HHHA3PhC═C(COOH)2H2328HD1HA3PhC═C(COOH)2H2329HD2HA3PhC═C(COOH)2H2330HD3HA3PhC═C(COOH)2H2331HHHA4PhC═C(COOH)2H2332HD1HA4PhC═C(COOH)2H2333HD2HA4PhC═C(COOH)2H2334HD3HA4PhC═C(COOH)2H2335HHHA5PhC═C(COOH)2H2336HD1HA5PhC═C(COOH)2H2337HD2HA5PhC═C(COOH)2H2338HD3HA5PhC═C(COOH)2H2339D1D1HA1PhC═C(COOH)2H2340D2D2HA1PhC═C(COOH)2H2341D3D3HA1PhC═C(COOH)2H2342D1D1HA2PhC═C(COOH)2H2343D2D2HA2PhC═C(COOH)2H2344D3D3HA2PhC═C(COOH)2H2345D1D1HA3PhC═C(COOH)2H2346D2D2HA3PhC═C(COOH)2H2347D3D3HA3PhC═C(COOH)2H2348D1D1HA4PhC═C(COOH)2H2349D2D2HA4PhC═C(COOH)2H2350D3D3HA4PhC═C(COOH)2H2351D1D1HA5PhC═C(COOH)2H2352D2D2HA5PhC═C(COOH)2H2353D3D3HA5PhC═C(COOH)2H2354HHHHPhC═C(COOH)2H Examples of the preferred light emitting material include compounds represented by the following general formula (151). The entire description of WO 2013/011955 including the paragraphs 0007 to 0033 and 0059 to 0066 is incorporated herein by reference. wherein in the general formula (151), R1, R2, R3, R4, R5, R6, R7, and R8each independently represent a hydrogen atom or an electron donating group, provided that at least one thereof represents an electron donating group; R9, R10, R11, R12, R13, R14, R15and R16each independently represent a hydrogen atom or an electron withdrawing group, provided that at least one thereof represents an electron withdrawing group. Specific examples of the compounds include the compounds shown in the following tables. In the tables, D1 to D10 represent the unsubstituted electron donating groups having the following structures, respectively. TABLE 17Compound 3001Compound No.R2R7R10R15Other Rs3002D1D1CNCNH3003D2D2CNCNH3004D3D3CNCNH3005D4D4CNCNH3006D5D5CNCNH3007D6D6CNCNH3008D7D7CNCNH3009D8D8CNCNH3010D9D9CNCNH3011D10D10CNCNH3012HD1HCNH3013HD2HCNH3014HD3HCNH3015HD4HCNH3016HD5HCNH3017HD6HCNH3018HD7HCNH3019HD8HCNH3020HD9HCNH3021HD10HCNH TABLE 18Compound No.R3R8R11R14Other Rs3022D1D1CNCNH3023D2D2CNCNH3024D3D3CNCNH3025D4D4CNCNH3026D5D5CNCNH3027D6D6CNCNH3028D7D7CNCNH3029D8D8CNCNH3030D9D9CNCNH3031D10D10CNCNH3032HD1HCNH3033HD2HCNH3034HD3HCNH3035HD4HCNH3036HD5HCNH3037HD6HCNH3038HD7HCNH3039HD8HCNH3040HD9HCNH3041HD10HCNH TABLE 19Compound No.R2, R7R3, R8R10, R15R11, R14Other Rs3042diphenylamino groupHCNHH3043bis(2-methylphenyl)amino groupHCNHH3044bis(3-methylphenyl)amino groupHCNHH3045bis(2,4-dimethylphenyl)amino groupHCNHH3046bis(2,6-dimethylphenyl)amino groupHCNHH3047bis(3,5-dimethylphenyl)amino groupHCNHH3048bis(2,4,6-trimethylphenyl)amino groupHCNHH3049bis(4-ethylphenyl)amino groupHCNHH3050bis(4-propylphenyl)amino groupHCNHH3051diphenylamino groupHHCNH3052bis(2-methylphenyl)amino groupHHCNH3053bis(3-methylphenyl)amino groupHHCNH3054bis(4-methylphenyl)amino groupHHCNH3055bis(2,4-dimethylphenyl)amino groupHHCNH3056bis(2,6-dimethylphenyl)amino groupHHCNH3057bis(3,5-dimethylphenyl)amino groupHHCNH3058bis(2,4,6-trimethylphenyl)amino groupHHCNH3059bis(4-ethylphenyl)amino groupHHCNH3060bis(4-propylphenyl)amino groupHHCNH TABLE 20Compound No.R2, R7R3, R6R10, R15R11, R14Other Rs3061Hdiphenylamino groupCNHH3062Hbis(2-methylphenyl)amino groupCNHH3063Hbis(3-methylphenyl)amino groupCNHH3064Hbis(4-methylphenyl)amino groupCNHH3065Hbis(2,4-dimethylphenyl)amino groupCNHH3066Hbis(2,6-dimethylphenyl)amino groupCNHH3067Hbis(3,5-dimethylphenyl)amino groupCNHH3068Hbis(2,4,6-trimethylphenyl)amino groupCNHH3069Hbis(4-ethylphenyl)amino groupCNHH3070Hbis(4-propylphenyl)amino groupCNHH3071Hdiphenylamino groupHCNH3072Hbis(2-methylphenyl)amino groupHCNH3073Hbis(3-methylphenyl)amino groupHCNH3074Hbis(4-methylphenyl)amino groupHCNH3075Hbis(2,4-dimethylphenyl)amino groupHCNH3076Hbis(2,6-dimethylphenyl)amino groupHCNH3077Hbis(3,5-dimethylphenyl)amino groupHCNH3078Hbis(2,4,6-trimethylphenyl)amino groupHCNH3079Hbis(4-ethylphenyl)amino groupHCNH3080Hbis(4-propylphenyl)amino groupHCNH Examples of the preferred light emitting material include compounds represented by the following general formula (161). The entire description of WO 2013/081088 including the paragraphs 0008 to 0071 and 0118 to 0133 is incorporated herein by reference. wherein in the general formula (161), any two or Y1, Y2and Y3each represent a nitrogen atom, and the balance thereof represents a methine group, of all Y1, Y2, and Y3each represent a nitrogen atom; Z1and Z2each independently represent a hydrogen atom or a substituent; and R1to R8each independently represent a hydrogen atom or a substituent, provided that at least one of R1to R8represents a substituted or unsubstituted diarylamino group or a substituted or unsubstituted carbazolyl group. The compound represented by the general formula (161) has at least two carbazole structures in the molecule thereof. Examples of the compound include the following compounds. Examples of the preferred light emitting material include compounds represented by the following general formula (181). The entire description of JP-A-2013-116975 including the paragraphs 0008 to 0020 and 0038 to 0040 is incorporated herein by reference. wherein in the general formula (181), R1, R2, R4to R8, R11, R12and R14to R18each independently represent a hydrogen atom or a substituent. Examples of the compound include the following compound. Examples of the preferred light emitting material include the following compounds. (1) A compound represented toy the following general formula (191): wherein in the general formula (191), Ar1represents a substituted or unsubstituted arylene group; Ar2and Ar3each independently represent a substituted or unsubstituted aryl group; and R1to R8each independently represent a hydrogen atom or a substituent, provided that at least one of R1to R8represents a substituted or unsubstituted diarylamino group, and R1and R8, R2and R3, R3and R4, R5and R6, R6and R7, and R7and R8each may be bonded to each other to form a cyclic structure. (2) The compound according to the item (1), wherein in the general formula (191), at least one of R3to R4represents a substituted or unsubstituted diarylamino group, and at least one of R5to R8represents s substituted or unsubstituted diarylamino group. (3) The compound according to the item (2), wherein in the general formula (191), R3and R6each represent a substituted or unsubstituted diarylamino group. (4) The compound according to any one of the items (1) to (3), wherein in the general formula (191), at least one of R1to R8represents a substituted or unsubstituted diphenylamino group. (5) The compound according to any one of the items (1) to (4), wherein in the general formula (191), Ar2and Ar3each independently represent a substituted or unsubstituted phenyl group. (6) The compound according to any one of the items (1) to (5), wherein in the general formula (191), Ar1represents a substituted or unsubstituted phenylene group, a substituted or unsubstituted naphthylene group or a substituted or substituted anthracenylene group. (7) The compound according to the item (1), wherein the compound has a structure represented by the following general formula (192): wherein in the general formula (192), R1to R8and R11to R24each independently represent a hydrogen atom or a substituent, provided that at least one of R1to R8represents a substituted or unsubstituted diarylamino group, and R1and R2, R2and R3, R3and R4, R5and R6, R6and R7, R7and R8, R11and R12, R12and R13, R13and R14, R14and R15, R16and R17, R17and R18, R18and R19, R19and R20, R21and R22, and R23and R24each may be bonded to each other to form a ring structure. (8) The compound according to the item (7), wherein in the general formula (192), at least one of R1to R4represents a substituted or unsubstituted diarylamino group, and at least one of R5to R8represents a substituted or unsubstituted diarylamino group. (9) The compound according to the Item (8), wherein in the general formula (192), R3and R6each represent a substituted or unsubstituted diarylamino group. Specific examples of the compound include the following compounds. Ph represents a phenyl group. Examples of the preferred light emit ting material include the following compounds. (1) A compound represented by the following general formula (201): wherein in the general formula (201), R1to R8each independently represent a hydrogen atom or a substituent, provided that at least one of R1to R8represents a substituted or unsubstituted carbazolyl group; and Ar1to Ar3each independently represent a substituted or unsubstituted aromatic ring or a heteroaromatic ring. (2) The compound according to the item (1), wherein in the general formula (201), at least one of R3and R6represents a substituted or unsubstituted carbazolyl group. (3) The compound according to the item (1) or (2), wherein the carbazolyl group is a 1-carbazolyl group, a 2-carbazolyl group, a 3-carbazolyl group or a 4-carbazolyl group. (4) The compound according to any one of the items (1) to (3), wherein the carbazolyl group has a substituent on the nitrogen atom in the carbazole ring structure. (5) The compound according to any one of the items (1) to (4), wherein in the general formula (201), at least one of Ar1, Ar2and Ar3represents a benzene ring or a naphthalene ring. (6) The compound according to any one of the items (1) to (5), wherein in the general formula (201), Ar1, Ar2and Ar3each represent the same aromatic ring or the same heteroaromatic ring. (7) The compound according to any one of the items (1) to (6), wherein in the general formula (201), Ar1, Ar2and Ar3each represent a benzene ring. Specific examples of the compound include the following compounds. Examples of the preferred light emitting material include compounds represented by the following general formulae (211) and (212). The entire description of WO 2013/133359 including the paragraphs 0007 to 0032 and 0079 to 0084 is incorporated herein by reference. wherein in the general formula (211), Z1, Z2and Z3each independently represent a substituent. wherein in the general formula (212), Ar1, Ar2, Ar3, Ar4, Ar5and Ar6each independently represent a substituted or unsubstituted aryl group. Specific examples of the compound represented by the general formula (212) Include the compound represented by the following structural formula. Specific examples of the compound represented by the general formula (212) include the compounds shown in the following table. In the compounds shown in the table, Ar1, Ar2, Ar3, Ar4, Ar5and Ar6are the same as each other, and are expressed by Ar. TABLE 21Compound No.Ar40024-fluorophenyl40033-fluorophenyl40042-fluorophenyl40053,5-difluorophenyl40062,4,6-trifluorophenyl40074-methylphenyl40083-methylphenyl40092-methylphenyl40103,5-dimethylphenyl40112,4,6-trimethylphenyl40124-ethylphenyl40133-ethylphenyl40142-ethylphenyl40153,5-diethylphenyl40164-propylphenyl40173-propylphenyl40183,5-dipropylphenyl40194-tert-butylphenyl40203-tert-butylphenyl40213,5-di-tert-butylphenyl40221-naphthyl40232-naphthyl Examples of the preferred light emitting material include compounds represented by the following general formula (221). The entire description of WO 2013/161437 including the paragraphs 0008 to 0054 and 0101 to 0121 is incorporated herein by reference. wherein in the general formula (221), R1to R10each independently represent a hydrogen atom or a substituent, provided that at least one of R1to R10represents a substituted or unsubstituted aryl group, a substituted or unsubstituted diarylamino group or a substituted or unsubstituted 9-carbasolyl group, and R1and R2, R2and R3, R3and R4, R4and R5, R5and R6, R6and R7, R7and R8, R8and R9, and R9and R10each may be bonded to each other to form a ring structure. Specific examples of the compound include the following compounds. Examples of the preferred light emitting material include compounds represented by the following general formula (231). The entire description of JP-A-2014-9352 including the paragraphs 0007 to 0041 and 0060 to 0069 is incorporated herein by reference. wherein in the general formula (231), R1to R4each independently represent a hydrogen atom or a substituted or unsubstituted (N,N-diarylamino)aryl group, provided that at least one of R1to R4represents a substituted or unsubstituted (N,N-diarylamino)aryl group, and two aryl groups constituting the diarylamino moiety of the (N,N-diarylamino)aryl group may be bonded to each other; W1, W2, X1, X2, Y1, Y2, Z1and Z2each independently represent a carbon atom or a nitrogen atom; and m1to m4each independently represent 0, 1 or 2. Specific examples of the compound include the following compounds. Examples of the preferred light emitting material include compounds represented by the following general formula (241). The entire description of JP-A-2014-9224 including the paragraphs 0008 to 0048 and 0067 to 0076 is incorporated herein by reference. wherein in the general, formula (241), R1to R6each independently represent a hydrogen atom or a substituent, provided that at least one of R1to R6represents a substituted or unsubstituted (N,N-diarylamino)aryl group, and two aryl groups constituting the diarylamino moiety of the (N,N-diarylamino)aryl group may be bonded to each other; X1to X6and Y1to Y6each independently represent a carbon, atom or a nitrogen atom; and n1, n2, p1, p2, q1and q2each independently represent 0, 1 or 2. Specific examples of the compound include the following compounds. Examples of the preferred light emitting material include the following compounds. (1) A compound represented by the following general formula (251): wherein in the general formula (251), one of A1to A7represents N, and the balance each independently represent C—R; R represents a non-aromatic group; Ar1to Ar3each independently represent a substituted or unsubstituted arylene group; and Z represents a single bond or a linking group. (2) The compound according to the item (1), wherein the compound represented by the general formula (251) has a structure represented by the following general formula (252): wherein in the general formula (252), 1 to 4 of A1to A7represents N, and the balance each independently represent C—R; R represents a non-aromatic group; Ar1represents a substituted or unsubstituted arylene group; R11to R14and R17to R20each independently represent a hydrogen atom or a substituent, in which R11and R12, R12and R13, R13and R14, R17and R18, R18and R19, and R19and R20each may be bonded to each other to form a cyclic structure; and Z1represents a single bond or a linking group having 1 or 2 linking chain atoms. (3) The compound according to the item (1), wherein the compound represented by the general formula (251) has a structure represented by the following general formula (253): wherein in the general, formula (253), from 2 to 4 of A1to A7represent N, and the balance represent C—R; R represents a non-aromatic group; Ar1represents a substituted or unsubstituted arylene group; and Y represents a substituted or unsubstituted carbazol-9-yl group, a substituted or unsubstituted 10H-phenoxazin-10-yl group, a substituted or unsubstituted 10H-phenothiazin-10-yl group, or a substituted or unsubstituted 10H-phenazin-5-yl group. (4) The compound according to the item (3), wherein in the general formula (253), Y represents a group represented by any one of the following general formulae (254) to (257): wherein in the general formulae (254) to (257), R21to R24, R27to R38, R41to R48, R51to R58, and R61to R65each independently represent a hydrogen atom or a substituent, in which R21and R22, R22and R23, R23and R24, R27and R28, R28and R29, R29and R30, R31and R32, R32and R33, R33and R34, R35and R36, R36and R37, R37and R38, R41and R42, R42and R43, R43and R44, R45and R46, R46and R47, R47and R48, R51and R52, R52and R53, R53and R54, R55and R56, R56and R57, R57and R58, R61and R62, R62and R63, R63and R64, R64and R65, R54and R61, and R55and R65each may be bonded to each other to form a cyclic structure. (5) The compound according to the item (3), wherein in the general formula (253), Y represents a group represented by the following general formula (258): wherein in the general formula (258), R21′to R24′and R27′to R30′each independently represent a hydrogen atom or a substituent, provided that at least one of R23′and R28′represents a substituent, and R21′and R22′, R22′and R23′, R23′and R24′, R27′and R28′, R28′and R29′, and R29′and R30′each may be bonded to each other to form a cyclic structure. (6) The compound according to the item (5), wherein in the general formula (258), at least one of R23′and R28′represents a substituted or unsubstituted diarylamino group or a substituted or unsubstituted carbazol-9-yl group. (7) The compound according to the item (4), wherein in the general formula (253), Y represents a group represented by the general formula (255). Examples of the compound include the following compounds. Examples of the preferred light emitting material include the following compounds. (1) A compound represented by the following general formula (271): wherein in the general formula (271), R1to R10each independently represent a hydrogen atom or a substituent, provided that at least one of R1to R10each independently represent a group represented by the following general formula (272), and R1and R2, R2and R3, R3and R4, R4and R5, R6and R7, R7and R8, R8and R9, and R9and R10each may be bonded to each other to form a cyclic structure: wherein in the general formula (272), R11to R20each independently represent a hydrogen atom or a substituent, in which R11and R12, R12and R13, R13and R14, R14and R15, R15and R16, R16and R17, R17and R18, R18and R19, and R19and R20each may be bonded to each other to form a cyclic structure; Ph represents a substituted or unsubstituted phenylene group; and n1 represents 0 or 1. (2) The compound according to the Item (1), wherein the group represented by the general formula (272) is a group represented by any one of the following general formulae (273) to (278): wherein in the general formulae (273) to (278), R21to R24, R27to R28, R41to R48, R51to R58, R61to R65, R71to R79, and R81to R90each independently represent a hydrogen atom or a substituent, in which R21and R22, R22and R23, R23and R24, R27and R28, R28and R29, R29and R30, R31and R32, R32and R33, R33and R34, R35and R36, R36and R37, R37and R38, R41and R42, R42and R43, R43and R44, R45and R46, R46and R47, R47and R48, R51and R52, R52and R53, R53and R54, R55and R56, R56and R57, R57and R58, R61and R62, R62and R63, R63and R64, R64and R65, R54and R61, R55and R65, R71and R72, R72and R73, R73and R74, R74and R75, R76and R77, R77and R78, R78and R79, R81and R82, R82and R83, R83and R84, R85and R86, R86and R87, R87and R88, and R89and R90each may be bonded to each other to form a cyclic structure; Ph represents a substituted or unsubstituted phenylene group; and n1 represents 0 or 1. (3) The compound according to the item (1) or (2), wherein in the general formula (271), at least one of R1to R5and at least one of R6to R10each represent a group represented by the general formula (272). (4) The compound according to the item (3), wherein in the general formula (271), R3and R8each represent a group represented by the general formula (272). (5) The compound according to any one of the items (1) to (4), wherein the group represented by the general formula (272) is a group represented by the general formula (274). (6) The compound according to any one of the items (1) to (4), wherein the group represented by the general formula (272) is a group represented by the general formula (273). (7) The compound according to the item (6), wherein in the general formula (273), at least one of R21to R24and R27to R30represents a substituent. (8) The compound according to the item (7), wherein the substituent is a group represented by any one of the general formulae (273) to (278). (9) The compound according to the item (8), wherein in the general formula (273), at least one of R23and R28represents the substituent. Examples of the compound include the following compounds. Examples of the preferred light emitting material include the following compounds. (1) A compound represented by the following general formula (281): wherein in the general formula (281), X represents an oxygen atom or a sulfur atom; R1to R8each independently represent a hydrogen atom or a substituent, provided that at least one of R1to R8represents a group represented by any one of the following general formulae (282) to (287), and R1and R2, R2and R3, R3and R4, R5and R6, R6and R7, R7and R8, R8and R9, and R9and R1may be bonded to each other to form a cyclic structure; and R9represents a substituent, provided that when R9contains an atom that contains a lone electron pair without forming a single bond to the boron atom, the atom may form a cyclic structure through a coordination bond with the boron atom: wherein in the general formulae (282) to (287), L12to L17each independently represent a single bond or a divalent linking group; * represent the position bonded to the benzene ring in the general formula (281); and R11to R20, R21to R28, R31to R38, R3a, R3b, R41to R48, R4a, R51to R58, R61to R68each independently represent a hydrogen atom or a substituent, in which R11and R12, R12and R13, R13and R14, R14and R15, R16and R17, R17and R18, R18and R19, R19and R20, R21and R22, R22and R23, R23and R24, R24and R25, R25and R26, R26and R27, R27and R28, R31and R32, R32and R33, R33and R34, R35and R36, R36and R37, R37and R38, R3aand R3b, R41and R42, R42and R43, R43and R44, R45and R46, R46and R47, R47and R48, R51and R52, R52and R53, R53and R54, R55and R56, R56and R57, R57and R58, R61and R62, R62and R63, R63and R64, R65and R66, R66and R67, and R67and R68each may be bonded to each other to form a cyclic structure. (2) The compound according to the item (1), wherein in the general formula (281), at lea at one of R1to R8represents a group represented by any one of the general formulae (283) to (287). (3) The compound according to the item (1) or (2), wherein in the case where at least, one of R1to R8in the general formula (281) represents a group represented by the general formula (283), at least one of R21to R28in the general formula (283) represents a substituent. (4) The compound according to any one of the items (1) to (3), wherein in the general formula (281), at least one of R2, R3, R6, and R7represents a group represented by any one of the general formulae (282) to (287). (5) The compound according to the item (4), wherein in the general formula (281), at least one of R3and R5represents a group represented by any one of the general formulae (282) to (287). (6) The compound according to the item (5), wherein in the general formula (281), R3and R5each independently represent a group represented by any one of the general formulae (282) to (287). (7) The compound according to any one of the items (1) to (6), wherein at least one of R11to R26in the general formula (282), at least one of R21to R28in the general formula (283), at least one of R31to R38and at least one of R3aand R3bin the general formula (284), at least one of R41to R48in the general formula (285), at least one of R51to R58in the general formula (286), and at least one of R61to R68in the general formula (287) each represent a substituent. (8) The compound according to the item (7), wherein at least one of R13and R18in the general formula (282), at least one of R23and R26in the general formula (283), at least one of R33and R36and at least one of R3aand R3bin the general formula (284), at least one of R43and R46in the general formula (285), at least one of R53and R56in the general formula (286), and at least one of R63and R66in the general formula (287) each represent a substituent. (9) The compound according to the item (8), wherein at least one of R13and R18in the general formula (282), at least one of R23and R26in the general formula (283), at least one of R33and R36and at least one of R3aand R3bin the general formula (284), at least one of R43and R46in the general formula (285), at least one of R53and R56in the general formula (286), and at least one of R63and R66in the general formula (287) each represent a group represented by any one of the general formulae (282) to (287). (10) The compound according to any one of the items (1) to (9), wherein in the general formulae (282) to (287), L12to L17each represent a single bond. (11) The compound according to any one of the items (1) to (10), wherein in the general formula (281), X represents an oxygen atom. (12) The compound according to any one of the items (1) to (11), wherein in the general formula (281), R9represents a group represented by the following general formula (a): wherein in the general formula (a), * represents the position bonded to the boron atom in the general formula (281); and R9a, R9b, R9c, R9d, and R9eeach independently represent a hydrogen atom or a substituent, in which R9aand R9b, R9band R9c, R9cand R9d, and R9dand R9emay be bonded to each other to form a cyclic structure. (13) The compound according to the item (12), wherein in the general formula (a), R9aand R9beach represent a substituent. (14) The compound according to any one of the items (1) to (13), wherein in the general formula (281), at least one of R1to R8represents a group represented by the general formula (284). (15) The compound according to any one at the items (1) to (4), and (7) to (14), wherein in the general formula (281), R3and R6, or R2and R7each represent a group represented by the general formula (284). (16) The compound according to the item (14) or (15), wherein in the general formula (284), R3aand R3beach represent a substituent. (17) The compound according to any one of the items (14) to (16), wherein the substituent is an alkyl group having from 1 to 15 carbon atoms or a phenyl group. (18) The compound according to any one of the items (14) to (16), wherein in the general formula (284), R3aand R3bare bonded to each other to form a cyclic structure. Examples of the compound include the following compounds. Examples of the preferred light emitting material include the following compounds. (1) A compound represented by the following general formula (291): wherein in the general formula (291), X represents O, S, N—R11, C═O, C(R12)(R13), or Si(R14)(R15); Y represents O, S, or N—R16; Ar1represents a substituted or unsubstituted arylene group; Ar2represents an aromatic ring or a heteroaromatic ring; and R1to R8and R11to R16each independently represent a hydrogen atom or a substituent, in which R1and R2, R2and R3, R3and R4, R5and R6, R6and R7, and R7and R8each may be bonded to each other to form a cyclic structure. (2) The compound according to the item (1), wherein the compound represented by the general formula (291) is a compound represented by the following general formula (292): wherein in the general formula (292), X represents O, S, N—R11, C═O, C(R12)(R13), or Si(R14)(R15); Y represents O, S, or N—R16; Ar2represents an aromatic ring or a heteroaromatic ring; and R1to R8, R11to R18, and R21to R24each independently represent a hydrogen atom or a substituent, in which R1and R2, R2and R3, R3and R4, R5and R6, R6and R7, R7and R8, R21and R22, and R23and R24each may be bonded to each other to form a cyclic structure. (3) The compound according to the item (1), wherein the compound represented by the general formula (291) is a compound represented by the following general formula (293): wherein in the general formula (293), X represents O, S, N—R11, C═O, C(R12)(R13), or Si(R14)(R15); Y represents O, S, or N—R16; and R1to R8, R11to R16, R21to R24, and R31to R34each independently represent a hydrogen atom or a substituent, in which R1and R2, R2and R3, R3and R4, R5and R6, R6and R7, R7and R8, R21and R22, R23and R24, R31and R32, R32and R33, and R33and R34each my be bonded to each other to form a cyclic structure. (4) The compound according to any one of the items (1) to (3), wherein X represents O or S. (5) The compound according to any one of the items (1) to (4), wherein X represents O, S, or N—R16, and R16represents a substituted or unsubstituted aryl group. (6) The compound according to any one of the items (1) to (5), wherein R1to R8each independently represent a hydrogen atom, a fluorine atom, a chlorine atom, a cyano group, a substituted or unsubstituted alkyl group having from 1 to 10 carbon atoms, a substituted or unsubstituted alkoxy group having from 1 to 10 carbon atoms, a substituted or unsubstituted dialkylamino group having from 2 to 10 carbon atoms, a substituted or unsubstituted diarylamino group having from 12 to 40 carbon atoms, a substituted or unsubstituted aryl group having from 6 to 15 carbon atoms, a substituted or unsubstituted heteroaryl group having from 3 to 12 carbon atoms. Examples of the compound include the following compounds. Examples of the preferred light emitting material include the following compounds. (1) A compound represented by the following general formula (301): (Dn)-A General Formula (301) wherein in the general formula (301), D represents a group represented toy the following general formula (302); A represents an n-valent group containing a structure represented toy the following general formula (303); and n represents an integer of from 1 to 8: wherein in the general formula (302), Z1represents O, S, C═O, C(R21)(R22), Si(R23)(R24), N—Ar3, or a single bond; R21to R24each independently represent an alkyl group having from 1 to 8 carbon atoms; Ar3represents a substituted or unsubstituted aryl group; and R1to R8each independently represent a hydrogen atom or a substituent, in which R1and R2, R2and R3, R3and R4, R5and R6, R6and R7, and R7and R8may be bonded to each other to form a cyclic structure, and when Z1represents a single bond, at least one of R1to R8represents a substituted or unsubstituted diarylamino group: wherein in the general formula (303), Y represents O, S, or N—Ar4; and Ar4represents a substituted or unsubstituted aryl group. (2) The compound according to the item (1), wherein in the general formula (302), Z1represents O, S, C═O, C(R21)(R22), Si(R23)(R24), or a single bond. (3) The compound according to the item (1), wherein in the general formula (302), Z1represents N—Ar3. (4) The compound according to any one of the items (1) to (3), wherein in the general formula (301), A represents a group having a structure represented by the following general formula (304); wherein in the general, formula (304), Y represents O, S, or N—Ar4; and Ar1and Ar2each independently represent a substituted or unsubstituted aromatic group. (5) The compound according to any one of the Items (1) to (4), wherein in the general formula (301), n represents an integer of from 1 to 4. (6) The compound according to any one of the items (1) to (3), wherein the compound is represented by the following general formula (305): wherein in the general formula (305), Z1and Z2each independently represent O, S, C═O, C(R21)(R24), Si(R23)(R24), N—Ar3, or a single bond; R21to R24each independently represent an alkyl group having from 1 to 8 carbon atoms; Ar3represents a substituted or unsubstituted aryl group; Ar1and Ar2each independently represent a substituted or unsubstituted aromatic group; Y represents O, S, or N—Ar4; Ar4represents a substituted or unsubstituted aryl group; R1to R8and R11to R18each independently represent a hydrogen atom or a substituent, in which R1and R2, R2and R3, R3and R4, R5and R6, R6and R7, R7and R8, R11and R12, R12and R13, R13and R14, R15and R16, R16and R17, and R17and R18each may be bonded to each other to form a cyclic structure, provided that when Z1represents a single bond, at least one of R1to R8represents a substituted or unsubstituted diarylamino group, and when Z2represents a single bond, at least one of R11to R18represents a substituted or unsubstituted diarylamino group; and n1 and n2 each independently represent an integer of from 0 to 8, provided that the sum of n1 and n2 is from 1 to 8. (7) The compound according to the item (6), wherein in the general formula (305), Z1and Z2each independently represent O, S, N—Ar3, or a single bond. (8) The expound according to the item (6) or (7), wherein in the general formula (305), Y represents O or N—Ar4. (9) The compound according to any one of the items (1) to (3), wherein the compound is represented by the following general formula (306): wherein in the general formula (306), Z1represents O, S, C═O, C(R21)(R24), Si(R23)(R24), N—Ar3, or a single bond; R21to R24each independently represent an alkyl group having from 1 to 8 carbon atoms; Ar3represents a substituted or unsubstituted aryl group; Ar1′represents a substituted or unsubstituted arylene group; Ar2′represents a substituted or unsubstituted aryl group; Y represents O, S, or N—Ar4; Ar4represents a substituted or unsubstituted aryl group; and R1to R8each independently represent a hydrogen atom or a substituent, in which R1and R2, R2and R3, R3and R4, R5and R6, R6and R7, and R7and R8each may be bonded to each other to form a cyclic structure, provided that when Z1represents a single bond, at least one of R1to R8represents a substituted or unsubstituted diarylamino group. (10) The compound according to any one of the items (1) to (3), wherein the compound is represented by the following general formula (307): wherein in the general formula (307), Z1and Z2each independently represent O, S, C═O, C(R21)(R24), Si(R23)(R24), N—Ar3, or a single bond; R21to R24each independently represent an alkyl group having from 1 to 8 carbon atoms; Ar3represents a substituted or unsubstituted aryl group; Ar1″and Ar2″each independently represent a substituted or unsubstituted arylene group; Y represents O, S, or N—Ar4; Ar4represents a substituted or unsubstituted aryl group; and R1to R8and R11to R18each independently represent a hydrogen atom or a substituent, in which R1and R2, R2and R3, R3and R4, R5and R6, R6and R7, R7and R8, R11and R12, R12and R13, R13and R14, R15and R16, R16and R17, and R17and R18each may be bonded to each other to form a cyclic structure, provided that when Z1represents a single bond, at least one of R1to R8represents a substituted or unsubstituted diarylamino group, and when Z2represents a single bond, at least, one of R11to R18represents a substituted or unsubstituted diarylamino group. (11) The compound according to the item (10), wherein in the general formula (307), Z1and Z2are the same as each other, Ar1″and Ar2″are the same as each other, R1and R14are the same as each other, R2and R13are the same as each other, R3and R12are the same as each other, R4and R11are the same as each other, R5and R18are the same as each other, R6and R17are the same as each other, R7and R16are the same as each other, and R8and R15are the same as each other. (12) The compound according to the item (10) or (11), wherein in the general formula (307), Z1and Z2each independently represent O, S, or N—Ar3. Examples of the compound include the following compounds. Examples of the preferred light emitting material include the following compounds. (1) A compound represented by the following general formula (311): A-D-A General Formula (311) wherein in the general formula (311), D represents a divalent, group containing a structure represented by the following formula (in which hydrogen atoms in the structure each may be substituted by a substituent): and two groups represented by A each independently are a group having a structure selected from the following group (in which hydrogen atoms in the structure each may be substituted by a substituent): (2) The compound according to the item (1), wherein in the general formula (311), D represents a group having a structure represented by the following general formula (312): wherein in the general formula (312), R1to R8each independently represent a hydrogen atom or a substituent, in which R1and R2, R2and R3, R3and R4, R5and R6, R6and R7, and R7and R8each may be bonded to each other to form a cyclic structure. (3) The compound according to the item (1) or (2), wherein in the general formula (311), the two groups represented by h have the same structure. (4) The compound according to any one of the items (1) to (3), wherein the compound is represented by the following general formula (313): wherein in the general formula (313), R1to R8and R11to R20each independently represent a hydrogen atom or a substituent, in which R1and R2, R2and R3, R3and R4, R5and R6, R6and R7, R7and R8, R11and R12, R12and R13, R13and R14, R14and R15, R16and R17, R17and R18, R18and R19, and R19and R20each may be bonded to each other to form a cyclic structure, provided that the general formula (313) satisfies the following conditions <1> and <2>: <1> R12represents a cyano group or a group having the following structure (in which hydrogen atoms each may be substituted by a substituent): or R13represents a cyano group or a group having any one of the following structures (in which hydrogen atoms each may be substituted by a substituent): or R12and R13are bonded to each other to form a group having any one of the following structures (in which hydrogen atoms each may be substituted by a substituent) with the benzene ring, to which R12and R13are bonded: and <2> R17represents a cyano group or a group having the following structure (in which hydrogen atoms each may be substituted by a substituent): or R18represents a cyano group or a group having any one of the following structures (in which hydrogen atoms each may be substituted by a substituent): or R17and R18are bonded to each other to form a group having any one of the following structures (in which hydrogen atoms each may be substituted by a substituent) with the benzene ring, to which R17and R18are bonded: (5) The compound according to the item (4), wherein in the general formula (313), R1to R8each independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having from 1 to 10 carbon atoms, a substituted or unsubstituted alkoxy group having from 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having from 6 to 15 carbon atoms, or a substituted or unsubstituted heteroaryl group having from 3 to 12 carbon atoms. (6) The compound according to the item (4) or (5), wherein in the general formula (313), at least two of R12, R13, R17, and R18each have a substituent to satisfy the conditions <1> and <2>, and the other of R11to R20each independently represent a hydrogen atom, a fluorine atom, a chlorine atom, a cyano group, a substituted or unsubstituted alkyl group having from 1 to 10 carbon atoms, a substituted or unsubstituted alkoxy group having from 1 to 10 carbon atoms, a substituted or unsubstituted dialkylamino group having from 2 to 10 carbon atoms, a substituted or unsubstituted diarylamino group having from 12 to 40 carbon atoms, a substituted or unsubstituted aryl group having from 6 to 15 carbon atoms, or a substituted or unsubstituted heteroaryl group having from 3 to 12 carbon atoms. (7) The compound according to any one of the items (4) to (6), wherein in the general formula (313), a substituent, by which hydrogen atoms in the structures in the conditions <1> and <2> may be substituted, is selected from the group consisting of a fluorine atom, a chlorine atom, a cyano) group, a substituted or unsubstituted alkyl group having from 1 to 10 carbon atoms, a substituted or unsubstituted alkoxy group having from 1 to 10 carbon atoms, a substituted or unsubstituted dialkylamino group having from 2 to 10 carbon atoms, a substituted or unsubstituted diarylamino group having from 12 to 40 carbon atoms, a substituted or unsubstituted aryl group having from 6 to 15 carbon atoms, or a substituted or unsubstituted heteroaryl group having from 3 to 12 carbon atoms. Examples of the compound include the following compounds. The molecular weight of the second organic compound is preferably 1,500 or less, more preferably 1,200 or less, further preferably 1,000 or less, and still further preferably 800 or less, for example, in the case where a light emitting layer containing the second organic compound is intended to be formed as a film by a vapor deposition method. The lower limit of the molecular weight, for example, of the compound represented by the general formula (1) or (9) is the molecular weight of the smallest compound represented by the general formula. In the case where the light emitting layer is formed by a coating method, the compound that has a relatively large molecular weight may also be preferably used irrespective of the molecular weight thereof. In the present invention, the delayed fluorescent material that is capable of being used as the second organic compound is not limited to the compound represented by the general formula (1), and any delayed fluorescent material that satisfies the expression (A) other than the compounds represented by the general formula (1) may be used. Examples of the delayed fluorescent material include compounds having a structure obtained by replacing the triazine skeleton of the general formula (1) by a pyridine skeleton, and compounds having a benzophenone skeleton or a xanthone skeleton having various heterocyclic structures substituted thereon. First Organic Compound The first organic compound is an organic compound having the lowest singlet excitation energy that is larger than those of the second organic compound and the third organic compound, and has a function as a host material assuming the transfer of the carrier and a function of confining the energy of the third organic compound within the compound. Due to the use of the first organic compound, the third organic compound can efficiently convert the energy formed through recombination of holes and electrons in the compound and the energy received from the first organic compound and the second organic compound to the light emission, and thus an organic electroluminescent device having a high light emission efficiency can be achieved. The first organic compound is preferably such an organic compound that has a bole transporting function and an electron transporting function, prevents the light emission from having a longer wavelength, and has a high glass transition temperature. Examples of the preferred compound capable of being used as the first organic compound are shown below. In the structural formulae of the example compounds, R and R1to R10each independently represent a hydrogen atom or a substituent, and n represents an integer of from 3 to 5. Third Organic Compound The third organic compound is a light emitting material having the lowest singlet excitation energy that is smaller than those of the first organic compound and the second organic compound. The third organic compound is transferred to the singlet excited state through reception of energy from the first organic compound and the second organic compound that are in the singlet excited state and the second organic compound that is in the singlet excited state that is achieved through the inverse intersystem crossing from the triplet excited state, and emits fluorescent light on returning to the ground state. The light emitting material used as the third organic compound is not particularly limited, as far as the compound is capable of emitting light through reception of energy from the first organic compound and the second organic compound, and the light emission thereof may be fluorescence, delayed fluorescence, or phosphorescence. Among the compounds, the light emitting material used as the third organic compound is preferably a compound that emits fluorescent light on returning from the lowest singlet excitation energy level to the ground energy level. The third organic compound used may be two or more kinds of compounds, as far as the compounds satisfy the relationship of the expression (A). For example, the use of two or more kinds of the third organic compounds having different light emission colors may enable light emission with a desired color. Examples of the preferred compounds capable of being used as the third organic compound are shown below for the light emission colors. In the structural formulae of the example compounds, Et represents an ethyl group, and i-Pr represents an isopropyl group. (1) Green Light Emitting Compound (2) Red Light Emitting Compound (3) Blue Light Emitting Compound (4) Yellow Light Emitting Compound In addition to the aforementioned compounds for light emission colors, the following compounds may also be used as the third organic compound. Contents of First Organic Compound, Second Organic Compound and Third Organic Compound The contents of the organic compounds contained in the light emitting layer are not particularly limited, and the content of the second organic compound is preferably smaller than the content of the first organic compound, by which a higher light emission efficiency may be obtained. Specifically, assuming that the total weight of the content W1 of the first organic compound, the content W2 of the second organic compound, and the content W3 of the third organic compound is 100% by weight, the content W1 of the first organic compound is preferably 15% by weight or more and 99.9% by weight or less, the content W2 of the second organic compound is preferably 5.0% by weight or more and 50% by weight or less, and the content W3 of the third organic compound is preferably 0.5% by weight or more and 5.0% by weight or less. Additional Organic Compound The light emitting layer may be constituted only by the first to third organic compounds, and may contain an additional organic compound other than the first to third organic compounds. Examples of the additional organic compound other than the first to third organic compounds include an organic compound having a hole transporting function and an organic compound having an electron transporting function. For examples of the organic compound having a hole transporting function and the organic compound having an electron transporting function, reference may be made to the hole transporting materials and the electron transporting materials described later. Substrate The organic electroluminescent device of the invention is preferably supported by a substrate. The substrate is not particularly limited and may be those that have been commonly used in an organic electroluminescent device, and examples thereof used include those formed of glass, transparent, plastics, quartz and silicon. Anode The anode of the organic electroluminescent device used is preferably formed of as an electrode material a metal, an alloy or an electroconductive compound each having a large work function (4 eV or more), or a mixture thereof. Specific examples of the electrode material include a metal, such as Au, and an electroconductive transparent material, such as CuI, indium tin oxide (ITO), SnO2and ZnO. A material that is amorphous and is capable of forming a transparent electroconductive film, such as IDIXO (In2O3—ZnO), may also be used. The anode may be formed in such a manner that the electrode material is formed into a thin film by such a method as vapor deposition or sputtering, and the film is patterned into a desired pattern by a photolithography method, or in the case where the pattern may not require high accuracy (for example, approximately 100 μm or more), the pattern may be formed with a mask having n desired shape on vapor deposition or sputtering of the electrode material. In alternative, in the case where a material capable of being applied as a coating, such as an organic electroconductive compound, is used, a wet film forming method, such as a printing method and a coating method, may be used. In the case where emitted light is to be taken out through the anode, the anode preferably has a transmittance of more than 10%, and the anode preferably has a sheet resistance of several hundred ohm per square or less. The thickness thereof may be generally selected from a range of from 10 to 1,000 nm, and preferably from 10 to 200 nm, while depending on the material used. Cathode The cathode is preferably formed of as an electrode material a metal having a small work function (4 eV or less) (referred to as an electron injection metal), an alloy or an electroconductive compound each having a small work function (4 eV or less), or a mixture thereof. Specific examples of the electrode material include sodium, a sodium-potassium alloy, magnesium, lithium, a magnesium-cupper mixture, a magnesium-silver mixture, a magnesium-aluminum mixture, a magnesium-indium mixture, an aluminum-aluminum oxide (Al2O3) mixture, indium, a lithium-aluminum mixture, and a rare earth metal. Among these, a mixture of an electron injection metal and a second metal that is a stable metal having a larger work function than the electron injection metal, for example, a magnesium-silver mixture, a magnesium-aluminum mixture, a magnesium-indium mixture, an aluminum-aluminum oxide (Al2O3) mixture, a lithium-aluminum mixture, and aluminum, are preferred from the standpoint of the electron injection property and the durability against oxidation and the like. The cathode may be produced by forming the electrode material into a thin film by such a method as vapor deposition or sputtering. The cathode preferably has a sheet resistance of several hundred ohm per square or less, and the thickness thereof may be generally selected from a range of from 10 nm to 5 μm, and preferably from 50 to 200 nm. For transmitting the emitted light, any one of the anode and the cathode of the organic electroluminescent device is preferably transparent, or translucent, thereby enhancing the light, emission luminance. The cathode may be formed with the electroconductive transparent materials described for the anode, thereby forming a transparent or translucent cathode, and by applying the cathode, a device having an anode and a cathode, both of which have transmittance, may be produced. Injection Layer The injection layer is a layer that is provided between the electrode and the organic layer, for decreasing the driving voltage and enhancing the light emission luminance, and includes a hole injection layer and an electron injection layer, which may be provided between the anode and the light emitting layer or the hole transporting layer and between the cathode and the light emitting layer or the electron transporting layer. The injection layer may be provided depending on necessity. Barrier Layer The barrier layer is a layer that is capable of inhibiting charges (electrons or holes) and/or excitons present in the light emitting layer from being diffused outside the light emitting layer. The electron barrier layer may be disposed between the light emitting layer and the hole transporting layer, and inhibits electrons from passing through the light emitting layer toward the hole transporting layer. Similarly, the hole barrier layer may be disposed between the light emitting layer and the electron transporting layer, and inhibits holes from passing through the light emitting layer toward the electron transporting layer. The barrier layer may also be used for inhibiting excitons from being diffused outside the light emitting layer. Thus, the electron barrier layer and the hole barrier layer each may also have a function as an exciton barrier layer. The term “the electron barrier layer” or “the exciton barrier layer” referred herein is intended to include a layer that has both the functions of an electron barrier layer and an exciton barrier layer by one layer. Hole Barrier Layer The hole barrier layer has the function of an electron transporting layer in a broad sense. The hole barrier layer has a function of inhibiting holes from reaching the electron transporting layer while transporting electrons, and thereby enhances the recombination, probability of electrons and holes in the light emitting layer. As the material for the hole barrier layer, the materials for the electron transporting layer described later may be used depending on necessity. Electron Barrier Layer The electron barrier layer has the function of transporting holes in a broad sense. The electron barrier layer has a function of inhibiting electrons from reaching the hole transporting layer while transporting holes, and thereby enhances the recombination probability of electrons and holes in the light emitting layer. Exciton Barrier Layer The exciton barrier layer is a layer for inhibiting excitons generated through recombination of holes and electrons in the light emitting layer from being diffused to the charge transporting layer, and the use of the layer inserted enables effective confinement of excitons in the light emitting layer, and thereby enhances the light emission efficiency of the device. The exciton barrier layer may be Inserted adjacent to the light emitting layer on any of the side of the anode and the side of the cathode, and on both the sides. Specifically, in the case where the exciton barrier layer is present on the side of the anode, the layer may be inserted between the hole transporting layer and the light emitting layer and adjacent to the light emitting layer, and in the case where the layer is inserted on the side of the cathode, the layer may be inserted between the light emitting layer and the cathode and adjacent to the light emitting layer. Between the anode and the exciton barrier layer that is adjacent to the light emitting layer on the side of the anode, a hole injection layer, an electron barrier layer and the like may be provided, and between the cathode and the exciton barrier layer that is adjacent to the light emitting layer on the side of the cathode, an electron injection layer, an electron transporting layer, a hole barrier layer and the like may be provided. In the case where the barrier layer is provided, the material used for the barrier layer preferably has excited singlet energy and excited triplet energy, at least one of which is higher than the excited singlet energy and the excited triplet energy of the light, emitting material, respectively. Hole Transporting Layer The hole transporting layer is formed of a hole transporting material having a function of transporting holes, and the hole transporting layer may be provided as a single layer or plural layers. The hole transporting material has one of injection or transporting property of holes and barrier property of electrons, and may be any of an organic material and an inorganic material. Examples of known hole transporting materials that may be used herein include a triazole derivative, an oxadiazole derivative, an imidazole derivative, a carbazole derivative, an indolocarbazole derivative, a polyarylalkane derivative, a pyrazoline derivative, a pyrazolone derivative, a phenylenediamine derivative, an arylamine derivative, an amino-substituted chalcone derivative, an oxazole derivative, a styrylanthracene derivative, a fluorenone derivative, a hydrazone derivative, a stilbene derivative, a silazane derivative, an aniline copolymer and an electroconductive polymer oligomer, particularly a thiophene oligomer. Among these, a porphyrin compound, an aromatic tertiary amine compound and a styrylamine compound are preferably used, and an aromatic tertiary amine compound is more preferably used. Electron Transporting Layer The electron transporting layer is formed of a material having a function of transporting electrons, and the electron transporting layer may be provided as a single layer or plural layers. The electron transporting material (which may also function as a hole barrier material in some cases) needs only to have a function of transporting electrons, which are injected from the cathode, to the light emitting layer. Examples of the electron transporting layer that may be used herein include a nitro-substituted fluorene derivative, a diphenylquinone derivative, a thiopyran dioxide derivative, carbodiimide, a fluorenylidane methane derivative, anthraquinodimethane and anthrone derivatives, and an oxadiazole derivative. The electron transporting material used may be a thiadiazole derivative obtained by replacing the oxygen atom of the oxadiazole ring of the oxadiazole derivative by a sulfur atom, or a quinoxaline derivative having a quinoxaline ring, which is known as an electron attracting group. Furthermore, polymer materials having these materials introduced to the polymer chain or having these materials used as the main chain of the polymer may also be used. In the production of the organic electroluminescent device, the compound represented by the general formula (1) not only may be used in the light emitting layer, but also may be used in the other layers than the light emitting layer. In this case, the compound represented by the general formula (1) used in the light emitting layer and the compound represented by the general formula (1) used in the other layers than the light emitting layer may be the same as or different from each other. For example, the compound represented by the general formula (1) may be used in the injection layer, the barrier layer, the hole barrier layer, the electron barrier layer, the exciton barrier layer, the hole transporting layer, the electron transporting layer and the like described above. The film forming method of the layers are not particularly limited, and the layers may be produced by any of a dry process and a wet process. Specific examples of preferred materials that may be used in the organic electroluminescent device are shown below, but the materials that may be used in the invention are not construed as being limited to the example compounds. The compound that is shown as a material having a particular function may also be used as a material having another function. In the structural formulae of the example compounds, R and R2to R7each independently represent a hydrogen atom or a substituent, and n represents an integer of from 3 to 5. Preferred examples of a compound that, may be used as the hole injection material are shown below. Preferred examples of a compound that way be used as the hole transporting material are shown below. Preferred examples of a compound that may be used as the electron barrier material are shown below. Preferred examples of a compound that may be used as the hole barrier material are shown below. Preferred examples of a compound that may be used as the electron transporting material are shown below. Preferred examples of a compound that may be used as the electron injection material are shown below. Preferred examples of a compound as a material that may be added are shown below. For example, the compound may be added as a stabilizing material. The organic electroluminescent device thus produced by the aforementioned method emits light on application of an electric field between the anode and the cathode of the device. In this case, when the light emission is caused by the singlet, excitation energy, light having a wavelength that corresponds to the energy level thereof may be confirmed as fluorescent light and delayed fluorescent light. When the light emission is caused by the triplet excitation energy, light having a wavelength that corresponds to the energy level thereof may be confirmed as phosphorescent light. The normal fluorescent light has a shorter light emission lifetime than the delayed fluorescent light, and thus the light emission lifetime may be distinguished between the fluorescent light and the delayed fluorescent light. On the other hand, phosphorescent light is substantially not observed at room temperature since in an ordinary organic compound, such as the compound of the invention, the triplet excitation energy is converted to heat or the like due to the instability thereof, and thus is immediately deactivated with a short lifetime. The triplet excitation energy of the ordinary organic compound may be measured only by observing light emission under an extremely low temperature condition. The organic electroluminescent device of the invention may be applied to any of a single device, a structure with plural devices disposed in an array, and a structure having anodes and cathodes disposed in an X-Y matrix. According to the invention, an organic light emitting device that is largely improved in light emission efficiency may be obtained by adding the compound represented by the general formula (1) in the light emitting layer. The organic light emitting device, such as the organic electroluminescent device, of the invention may be applied to a further wide range of purposes. For example, an organic electroluminescent display apparatus may be produced with the organic electroluminescent device of the invention, and for the details thereof, reference may be made to S. Tokito, C. Adachi and H. Murata, “Yuki EL Display” (Organic EL Display) (Ohmsha, Ltd.). In particular, the organic electroluminescent device of the invention may be applied to organic electroluminescent illumination and backlight which are highly demanded. EXAMPLE The features of the invention will be described more specifically with reference to examples below. The materials, processes, procedures and the like shown below may be appropriately modified unless they deviate from the substance of the invention. Accordingly, the scope of the invention is not construed as being limited to the specific examples shown below. The light emission characteristics were evaluated by using High-performance UV/Vis/NIR Spectrophotometer (Lambda 950, produced by PerkinElmer, Co., Ltd.), Fluorescence Spectrophotometer (FluoroMax-4, produced by Horiba, Ltd.), Absolute PL Quantum Yield Measurement System (C11347, produced by Hamamatsu Photonics K.K.), Source Meter (2400 Series, produced by Keithley Instruments Inc.), Semiconductor Parameter Analyzer (E5273A, produced by Agilent Technologies, Inc.), Optical Power Meter (1930C, produced by Newport Corporation), Fiber Optic Spectrometer (USB2000, produced by Ocean Optics, Inc.), Spectroradiometer (SR-3, produced by Topcon Corporation), and Streak Camera (Modal C4334, produced by Hamamatsu Photonics K.K.). The lowest singlet excitation energy level ES1and the lowest triplet excitation energy level ET1of the compounds used in Examples and Comparative Examples were measured in the following procedures. The energy difference ΔEstbetween the lowest singlet excited state and the lowest triplet excited state at 77 K was obtained by measuring the difference between ES1and ET1. (1) Lowest Singlet Excitation Energy Level ES1 The compound to be measured was vapor-deposited on a Si substrate to produce a specimen, and the specimen was measured for a fluorescent spectrum at ordinary temperature (300 K). In the fluorescent spectrum, the ordinate Is the light emission, and the abscissa is the wavelength. A tangent line was drawn for the downfalling part of the light emission spectrum on the short wavelength side, and the wavelength λedge (nm) of the intersection point of the tangent line and the abscissa was obtained. The wavelength value was converted to an energy value according to the following conversion expression to provide the singlet energy ES1. ES1(eV)═1239.85/λedge Conversion Expression The light emission spectrum was measured with a nitrogen laser (MNL200, produced by Lasertechnik Berlin GmbH) as an excitation light source and Streak Camera (C4334, produced by Hamamatsu Photonics K.K.) as a detector. (2) Lowest Triplet Excitation Energy Level ET1 The same specimen as used for the singlet energy ES1was cooled to 77 K, the specimen for measuring phosphorescent light was irradiated with excitation light (337 nm), and the phosphorescence intensity was measured with a streak camera. A tangent line was drawn for the upstanding part of the phosphorescent spectrum on the short wavelength side, and the wavelength λedge (nm) of the intersection point of the tangent line and the abscissa was obtained. The wavelength value was converted to an energy value according to the following conversion expression to provide the singlet energy ET1. ET1(eV)═1239.85/λedge Conversion Expression The tangent line for the upstanding part of the phosphorescent spectrum on the short wavelength side was drawn in the following manner. Over the range in the phosphorescent spectrum curve of from the short wavelength end to the maximum peak value closest to the short wavelength end among the maximum peak values of the spectrum, a tangent line was assumed while moving within the range toward the long wavelength side. The gradient of the tangent line was increased while the curve was standing up (i.e., the value of the ordinate was increased). The tangent line that was drawn at the point where the gradient thereof became maximum was designated as the tangent line for the upstanding part of the phosphorescent spectrum on the short wavelength side. A maximum peak having a peak intensity that was 10% or less of the maximum peak point intensity of the spectrum was not included in the maximum peak values and thus was not designated as the maximum peak value closest to the short wavelength end, and the tangent line that was drawn at the point where the gradient became maximum that was closest to the maximum peak value closest to the short wavelength end was designated as the tangent line for the upstanding part of the phosphorescent spectrum on the short wavelength side. Example 1 Production and Evaluation of Organic Electroluminescent Devices using mCBP (First Organic Compound), PXZ-TRZ (Second Organic Compound), and TBRb (Third Organic Compound) The following organic compounds were prepared as materials of a light emitting layer. mCBP has a lowest singlet excitation energy level ES1of 2.7 eV and a lowest triplet excitation energy level ET1of 2.90 eV, PXZ-TRZ has a lowest singlet excitation energy level ES1of 2.3 eV and a lowest triplet excitation energy level ET1of 2.23 eV, and TBRb has a lowest singlet excitation energy level ES1of 2.18 eV.FIG.2shows a transient decay curve of a PXZ-TRZ thin film. It was confirmed fromFIG.2that PXZ-TRZ was an organic compound that exhibited delayed fluorescence. The energy difference ΔEstbetween the lowest singlet excited state and the lowest triplet excited state at 77 K of PXZ-TRZ was 0.070 eV. An organic electroluminescent device was produced by using mCBP, PXZ-TRZ, and TBRb as materials of a light emitting layer. Thin films ware laminated on a glass substrate having formed thereon an anode formed of indium tin oxide (ITO) having a thickness of 110 nm, by a vacuum vapor deposition method at a vacuum degree of 5.0×10−5Pa or less. Firstly, HATCN was formed to a thickness of 10 nm on ITO, and thereon TrisPCz was formed to a thickness of 30 nm. mCBP, PXZ-TRZ, and TBRb were then vapor-co-deposited from separate vapor deposition sources to form a layer having a thickness of 15 nm, which was designated as a light emitting layer. At this time, the concentration of PXZ-TRZ was selected from a range of from 10 to 50% by weight, and the concentration of TBRb was 1% by weight. T2T was then formed to a thickness of 10 nm, and thereon BPyTP2 was formed to a thickness of 55 nm. Lithium fluoride (LiF) was then vacuum vapor-deposited to a thickness of 0.8 nm, and then aluminum (Al) was vapor-deposited to a thickness of 100 nm to form a cathode, thereby producing organic electroluminescent devices having various compositional ratios of the light emitting layer. FIG.3shows the light emission spectra of the organic electroluminescent devices thus produced,FIG.4shows the luminance-external quantum efficiency characteristics thereof, andFIGS.5and6show the transient decay curves thereof. Comparative Example 1 Production and Evaluation of Organic Electroluminescent Device using mCBP and TBRb An organic electroluminescent device was produced in the same manner as in Example 1 except that in the production of the light emitting layer, the vapor deposition source for PXZ-TRZ was not used to forma vapor deposition film containing mCBP and 1% by weight of TBRb. FIGS.3to6show the light emission spectrum, the luminance-external quantum efficiency characteristics, and the transient decay curve of the organic electroluminescent device thus produced, along with the measurement results of Example 1. Comparative Example 2 Production and Evaluation of Organic Electroluminescent Device Using PXZ-TRZ and TBRb An organic electroluminescent device was produced in the same manner as in Example 1 except that in the production of the light emitting layer, the vapor deposition source for mCBP was not used to form a vapor deposition film containing only PXZ-TRZ and 1% by weight of TBRb. FIGS.3and4show the light emission spectrum and the luminance-external quantum efficiency characteristics of the organic electroluminescent device thus produced, along with the measurement results of Example 1. Comparative Example 3 Production and Evaluation of Organic Electroluminescent Device using mCBP and PXZ-TRZ An organic electroluminescent device was produced in the same manner as in Example 1 except that in the production of the light emitting layer, the vapor deposition source for TBRb was not used to form a vapor deposition film containing mCBP and 25% by weight of PXZ-TRZ. FIG.6shows the transient decay curve of the organic electroluminescent device thus produced, along with the measurement results of Example 1 and Comparative Example 1. The characteristic values of the organic electroluminescent devices obtained from the characteristic graphs are shown in Table 22, and the initial luminances in the measurement of the transient decay curves shown inFIG.6and the luminance half-life periods obtained fromFIG.6are shown inFIG.23. TABLE 22External quantumCurrentPowerCIELight emissionefficiencydensityVoltageefficiencychromaticitypeak wavelengthComposition of light emitting layer(%)(mA/cm2)(V)(lm/W)(x, y)(nm)Example 1mCBP + 10 wt % PXZ-TRZ +9.123.513.5225.520.4746, 0.5182562.71 wt % TBRbmCBP + 25 wt % PXZ-TRZ +9.443.524.1421.590.4854, 0.5069565.71 wt % TBRbComparativemCBP + 1 wt % TBRb1.2625.667.561.620.4692, 0.4957561.2Example 1ComparativePXZ-TRZ + 1 wt % TBRb9.73.774.5718.280.4803, 0.5094564.9Example 2 TABLE 23LuminanceComposition of lightInitial luminancehalf-lifeemitting layer(cd/m2)periodExample 1mCBF + 25 wt %3.225195PXZ-TRZ + 1 wt %TBRbComparativemCBP + 1 wt %67740Example 1TBRbComparativemCBP + 25 wt %2.791119Example 3PXZ-TRZ As shown in Table 22, the organic electroluminescent device of Example 1 having a light emitting layer containing mCBP, PXZ-TRZ, and TBRb had a considerably high external quantum efficiency and a considerably high current efficiency and thus had excellent characteristics, as compared to the organic electroluminescent device of Comparative Example 1 using no PXZ-TRZ and the organic electroluminescent device of Comparative Example 2 using no mCBP. As shown in Table 23, the organic electroluminescent device of Example 1 had a far longer luminance half-life period than the organic electroluminescent device of Comparative Example 1 using no PXZ-TRZ and the organic electroluminescent device of Comparative Example 3 using no TBRb. It was found fromFIG.5that on the load of the initial luminance (1,000 cd/cm2), the period of time TL90 where the luminance decayed to 90% was 1 hour for the content of PXZ-TRZ of 0%, 3.5 hours for the content of PXZ-TRZ of 10% by weight, 9.7 hours for the content of PXZ-TRZ of 25% by weight, and 12.5 hours for the content of PXZ-TRZ of 50% by weight, and thus it was understood therefrom that the addition of PXZ-TRZ to the light emitting layer largely enhanced the durability of the electroluminescent device. However, there was little difference between 25% and 50% for the concentration of PXZ-TRZ, and thus it was understood therefrom that the concentration of PXZ-TRZ was preferably less than 50%, i.e., preferably smaller than the concentration of mCBP. Example 2 Production and Evaluation of Organic Electroluminescent Device using ADN (First Organic Compound), PXZ-TRZ (Second Organic Compound), and TBRb (Third Organic Compound) An electroluminescent device was produced and evaluated in the same manner as in Example 1 except that ADN was used as the first organic compound instead of mCBP in Example 1. ADN has a lowest singlet excitation energy level ES1of 2.83 eV and a lowest triplet excitation energy level ET1of 1.69 eV. Light emission at a wavelength of approximately 560 nm was observed from the organic electroluminescent device of Example 2. The organic electroluminescent device of Example 1 achieved an external quantum efficiency that was significantly higher than the organic electroluminescent device of Example 2, and thus was confirmed to have considerably excellent characteristics. Example 3 Production and Evaluation of 4-Element Organic Electroluminescent Device using mCBP (First Organic Compound), PXZ-TRZ (Second Organic Compound), TBRb (Third Organic Compound A), and DBP (Third Organic Compound B) While, the organic electroluminescent device was produced by using only TBRb as the third organic compound in Example 1, an organic electroluminescent device was produced and evaluated by using further DBP shown below as the third organic compound in this example. DBP has a lowest singlet excitation energy level ES1of 2.0 eV. Thin films were laminated on a glass substrate having formed thereon an anode formed of indium tin oxide (ITO) having a thickness of 110 nm, by a vacuum vapor deposition method at a vacuum degree of 5.0×10−5Pa or less. Firstly, HATCN was formed to a thickness of 10 nm on ITO, and thereon TrisPCz was formed to a thickness of 30 nm. mCBP, PXZ-TRZ, TBRb, and DBP were then vapor-co-deposited from separate vapor deposition sources to form a layer having a thickness of 15 nm, which was designated as a light emitting layer. At this time, the concentration of PXZ-TRZ was selected from a range of from 10% by weight, the concentration of TBRb was 3.0% by weight, and the concentration of DBP was 1.0% by weight. T2T was then formed to a thickness of 10 nm, and thereon BPyTP2 was formed to a thickness of 55 nm. Lithium fluoride (LiF) was then vacuum vapor-deposited to a thickness of 0.8 nm, and then aluminum (Al) was vapor-deposited to a thickness of 100 nm to form a cathode, thereby producing an organic electroluminescent device. FIG.7shows the absorption and emission spectra of PXZ-TRZ (second organic compound), TBRb (third organic compound A), and DBP (third organic compound B), andFIG.8shows the light emission spectrum of the organic electroluminescent device thus produced. The CIE chromaticity (x,y) was (0.65, 0.35).FIG.9shows the luminance-external quantum efficiency characteristics of the organic electroluminescent device thus produced,FIG.10shows voltage-current density characteristics thereof. It was confirmed that the organic electroluminescent device thus produced achieved a high external quantum efficiency of 7.6%. Example 4 Production and Evaluation of Organic Electroluminescent Device using CBP (First Organic Confound), ptris-PXZ-TRZ (Second Organic Compound), and DBP (Third Organic Compound) In this example, an organic electroluminescent device was produced and evaluated by using CBP shown below as the first organic compound, ptris-PXZ-TRZ shown below as the second organic compound, and DBP as the third organic compound. CBP has a lowest singlet excitation energy level ES1of 3.26 eV and a lowest triplet excitation energy level ET1of 2.55 eV, and ptris-PXZ-TRZ has a lowest singlet excitation energy level ES1of 2.30 eV and a lowest triplet excitation energy level ET1of 2.16 eV. Thin films were laminated on a glass substrate having formed thereon an anode formed of indium tin oxide (ITO) having a thickness of 110 nm in the same manner as in Example 1. Firstly, α-NPD was formed to a thickness of 35 nm on ITO, and thereon CBP, ptris-PXZ-TRZ, and DBP were vapor-co-deposited from separate vapor deposition sources to form a layer having a thickness of 15 nm, which was designated as a light entitling layer. At this time, the concentration of ptris-PXZ-TRZ was 15% by weight, and the concentration of DBP was 1% by weight. TPBi was then formed to a thickness of 65 nm, lithium fluoride (LiF) was vacuum vapor-deposited thereon to a thickness of 0.8 nm, and then aluminum (Al) was vapor-deposited to a thickness of 100 nm to form a cathode, thereby producing an organic electroluminescent device. The organic electroluminescent device thus produced was measured for light emission spectra with a luminance set at 10 cm/m2, 100 cm/m2, 500 cm/m2, and 1,000 cm/m2. The results are shown inFIG.11. The CIE chromaticity (x,y) was (0.64, 0.36).FIG.12shows the delayed fluorescent component of the light emission spectrum of the organic electroluminescent device thus produced, andFIG.13shows the transient decay curve thereof. The internal quantum efficiency ηincwas 59%, and the single exciton formation efficiency ηγswas 74%.FIG.14shows the luminance-external quantum efficiency characteristics of the organic electroluminescent device thus produced.FIG.14also shows the luminance-external quantum efficiency characteristics of an organic electroluminescent device (CBP; 1 wt %-DBP) having a light emitting layer produced by using no ptris-PXZ-TRZ. It was confirmed that the organic electroluminescent device of this example achieved a high external quantum efficiency of 12%. The power efficiency thereof was 18.0 lm/W, and the current efficiency thereof was 16.5 cd/A. Example 5 Production and Evaluation of Organic Electroluminescent Device using DPEPO (First Organic Compound), ASAQ (Second Organic Compound), and TBPe (Third Organic Compound) In this example, an organic electroluminescent device was produced and evaluated by using DPEPO shown below as the first organic compound, ASAQ shown below as the second organic compound, and TBPe shown below as the third organic compound. DPEPO has a lowest singlet excitation energy level ES1of 3.20 eV and a lowest triplet excitation energy level ET1of 3.00 eV, ASAQ has a lowest, singlet excitation energy level ES1of 2.75 eV and a lowest triplet excitation energy level ET1of 2.52 eV, and TBPe has a lowest singlet excitation energy level ES1of 2.70 eV. Thin films were laminated on a glass substrata having formed thereon an anode formed of indium tin oxide (ITO) having a thickness of 110 nm in the same manner as in Example 1. Firstly, α-NPD was formed to a thickness of 35 nm on ITO, and thereon mCP was formed to a thickness of 10 nm. DPEPO, ASAQ, and TBPe were then vapor-co-deposited from separate vapor deposition sources to form a layer having a thickness of 15 nm, which was designated as a light emitting layer. At this time, the concentration of ASAQ was 15% by weight, and the concentration of TBPe was 1% by weight. DPEPO was then formed to a thickness of 8 nm, and thereon TPBi was formed to a thickness of 37 nm. Lithium fluoride (LiF) was vacuum vapor-deposited thereon to a thickness of 0.3 nm, and then aluminum (Al) was vapor-deposited to a thickness of 100 nm to form a cathode, thereby producing an organic electroluminescent device. FIG.15shows the light emission spectrum of the organic electroluminescent device thus produced. The CIE chromaticity (x,y) was (0.17, 0.30).FIG.16shows the voltage-current density characteristics of the organic electroluminescent device thus produced, andFIG.17shows the current density-external quantum efficiency characteristics thereof. It was confirmed that the organic electroluminescent device thus produced achieved a high external quantum efficiency of 13.4%. Example 6 Production and Evaluation of Organic Electroluminescent Device using DPEPO (First Organic Compound), ASAQ (Second Organic Compound), and TBPe (Third Organic Compound) An organic electroluminescent device was produced in the same manner as in Example 5 except that the thickness of TPBi was changed to 57 nm. The energy difference ΔEstbetween the lowest singlet excited state and the lowest triplet excited state and the photoluminescence quantum efficiency ϕPLof the light emitting layer thus formed are shown in Table 24.FIG.18shows the luminance-external quantum efficiency characteristics of the organic electroluminescent device thus produced, and the characteristic values thereof are shown in Table 25. Example 7 Production and Evaluation of Organic Electroluminescent Device using mCP (First Organic Compound), MN04 (Second Organic Compound), and TTPA (Third Organic Compound) In this example, an organic electroluminescent device was produced and evaluated by using mCP shown below as the first organic compound, MN04 shown below as the second organic compound, and TTPA shown below as the third organic compound. mCP has a lowest singlet excitation energy level ES1of 3.30 eV and a lowest triplet excitation energy level ET1of 2.90 eV, MN04 has a lowest singlet excitation energy level ES1of 2.60 eV and a lowest triplet excitation energy level ET1of 2.47 eV, and TTPA has a lowest singlet excitation energy level ES1of 2.34 eV. Thin films were laminated on a glass substrate having formed thereon an anode formed of indium tin oxide (ITO) having a thickness of 110 nm in the same manner as in Example 1. Firstly, TAPC was formed to a thickness of 35 nm on ITO, and thereon mCP, MN04, and TTPA were then vapor-co-deposited from separate vapor deposition sources to form a layer having a thickness of 15 nm, which was designated as a light emitting layer. At this time, the concentration of MN04 was 50% by weight, and the concentration of TTPA was 1% by weight. TPBi was then formed to a thickness of 65 nm, lithium fluoride (LiF) was vacuum vapor-deposited thereon to a thickness of 0.8 nm, and then aluminum (Al) was vapor-deposited to a thickness of 100 nm to form a cathode, thereby producing an organic electroluminescent device. The energy difference ΔEstbetween the lowest singlet excited state and the lowest triplet excited state and the photo luminescence quantum efficiency ϕPLof the light emitting layer thus formed are shown in Table 24.FIG.19shows the luminance-external quantum efficiency characteristics of the organic electroluminescent device thus produced, and the characteristic values thereof are shown in Table 25. Example 8 Production and Evaluation of Organic Electroluminescent Device using mCBP (First Organic Compound), PXZ-TRZ (Second Organic Compound), and TBRb (Third Organic Compound) In this example, an organic electroluminescent device was produced and evaluated by using mCBP as the first organic compound, PXZ-TRZ as the second organic compound, and TBRb as the third organic compound. Thin films were laminated on a glass substrate having formed thereon an anode formed of indium tin oxide (ITO) having a thickness of 110 nm in the same manner as in Example 1. Firstly, TAPC was formed to a thickness of 35 nm on ITO, and thereon mCBP, PXZ-TRZ, and TBRb were then vapor-co-deposited from separate vapor deposition sources to form a layer having a thickness of 30 nm, which was designated as a light emitting layer. At this time, the concentration of PXZ-TRZ was 25% by weight, and the concentration of TBRb was by weight. T2T was then formed to a thickness of 10 nm, and thereon Alq3 was formed to a thickness of 55 nm. Lithium fluoride (LiF) was vacuum vapor-deposited thereon to a thickness of 0.8 nm, and then aluminum (Al) was vapor-deposited to a thickness of 100 nm to form a cathode, thereby producing an organic electroluminescent device. The energy difference ΔEstbetween the lowest singlet excited state and the lowest triplet excited state and the photoluminescence quantum efficiency ϕPLof the light emitting layer thus formed are shown in Table 24.FIG.20shows the luminance-external quantum efficiency characteristics of the organic electroluminescent device thus produced, and the characteristic values thereof are shown in Table 25. Example 9 Production and Evaluation of Organic Electroluminescent Device using CBP (First Organic Compound), ptris-PXZ-TRZ (Second Organic Compound), and DBP (Third Organic Compound) In this example, an organic electroluminescent device was produced and evaluated by using CBP as the first organic compound, ptris-PXZ-TRZ as the second organic compound, and DBP as the third organic compound. Thin films were laminated on a glass substrate having formed thereon an anode formed of indium tin oxide (ITO) having a thickness of 110 nm in the same manner as in Example 1. Firstly, TAPC was formed to a thickness of 35 nm on ITO, and thereon CBP, ptris-PXZ-TRZ, and DBP were then vapor-co-deposited from separate vapor deposition sources to form a layer having a thickness of 15 nm, which was designated as a light emitting layer. At this time, the concentration of ptris-PXZ-TRZ was 15% by weight, and the concentration of DBP was 1% by weight. TPBi was then formed to a thickness of 65 nm, lithium fluoride (LiF) was vacuum vapor-deposited thereon to a thickness of 0.8 nm, and then aluminum (Al) was vapor-deposited to a thickness of 100 nm to form a cathode, thereby producing an organic electroluminescent device. The energy difference ΔEstbetween the lowest singlet excited state and the lowest triplet excited state and the photoluminescence quantum efficiency ϕPLof the light emitting layer thus formed are shown in Table 24.FIG.21shows the luminance-external quantum efficiency characteristics of the organic electroluminescent device thus produced, and the characteristic values thereof are shown In Table 25. TABLE 24Composition of lightLight emissionΔEstemitting layercolor(eV)ϕFLExample 6DPEPO + 15 wt %blue0.0380 + 2ASAQ + 1 wt %TBPeExample 7mCP + 50 wt %green0.0686 ± 2MN04 + 1 wt %TTPAExample 8mCBP + 25 wt %yellow0.0790 ± 2PXZ-TRZ + 1 wt %TBRbExample 9CBP + 15 wt %red0.1180 ± 2ptris-PXZ-TRZ +1 wt % DBP TABLE 25Maximum ex-MaximumMaximumExcitonCharacteristic values at 1,000 cd/m2Turn-onternal quantumcurrentpowerformationCIEExternal quantumCurrentPowervoltageefficiencyefficiencyefficiencyefficiencychromaticityVoltageefficiencyefficiencyefficiency(V)(%)(cd/A)(lm/W)(%)(x, y)(V)(%)(cd/A)(lm/W)Example 64.713.42718840.17, 0.037.88.7187Example 73.011.74041860.29, 0.594.011.13830Example 83.116.35554880.45, 0.535.115.55232Example 93.015.22526950.61, 0.395.09.51711 As shown in Table 25, all the organic electroluminescent devices of Examples 6 to 9 had a high current efficiency and a high power efficiency and achieved a high external quantum efficiency of 11% or more. INDUSTRIAL APPLICABILITY The organic electroluminescent device of the invention provides a high light emission efficiency, and thus may be applied as an image display device to various equipments. Accordingly, the invention has a high industrial applicability. REFERENCE SIGNS LIST 1substrate2anode3hole Injection layer4hole transporting layer5light emitting layer6electron transporting layer7cathode | 209,297 |
11944011 | DETAILED DESCRIPTION The aspects and features of the present invention summarized above can be embodied in various forms. The following description shows, by way of illustration, combinations and configurations in which the aspects and features can be put into practice. It is understood that the described aspects, features, and/or embodiments are merely examples, and that one skilled in the art may utilize other aspects, features, and/or embodiments or make structural and functional modifications without departing from the scope of the present disclosure. The present invention provides a thermoelectric (TE) nanocomposite material in which control of its charge transport is spatially decoupled from control of its heat transport. By doing so, the present invention enables design of a TE nanocomposite material that combines efficient electronic transport and suppressed thermal transport associated with different nanocomposite constituents. The present invention provides a TE nanocomposite material that includes at least one component consisting of nanocrystals. A TE nanocomposite material in accordance with the present invention comprises a three-dimensional nanoparticle material network of bonded nanoparticles of a first material having a p- or n-type conductivity embedded within a solid comprising a second material having a thermal conductivity lower than a thermal conductivity of the first material, wherein the nanoparticle material network of the first material retains its nanostructure within the solid material, a p- or n-type network formed by the first material percolates charge through the entire TE material; and the second material provides a level of phonon scattering in the TE nanocomposite material so as to reduce its thermal conductivity while maintaining electrical transport properties provided by the percolating p- or n-type network formed by the first material A TE nanocomposite material in accordance with the present invention can include, but is not limited to, multiple nanocrystalline structures, nanocrystal networks or partial networks, or multi-component materials, with some components forming connected or percolated interpenetrating networks including non-crystalline and nanocrystalline networks. In some embodiments, a TE nanocomposite material in accordance with the present invention can be in the form of a thermoelectric composite comprising a bulk solid having semiconductor as part of the material, where the semiconductor forms an electrically conductive network within the material. In some embodiments, a TE nanocomposite material in accordance with the present invention can be in the form of a nanocomposite thermoelectric material having one network of p-type or n-type semiconductor domains and a low thermal conductivity semiconductor or dielectric network or domains separating the p-type or n-type domains, where this low thermal conductivity network provides efficient phonon scattering that reduces thermal conductivity and heat transport in the thermoelectric nanocomposite while maintaining the electronic transport in the p-type or n-type semiconductor network, with at least one of the networks comprising 3D, 2D, or 1D nanocrystals/nanocrystallites or possessing at least one nanoscale dimension. In some embodiments, a TE nanocomposite material in accordance with the present invention comprises a thermoelectric nanocomposite having one network of p- or n-type semiconductor domains and another network of insulator/dielectric domains, with at least one of the networks consisting of 3D, 2D, or 1D nanocrystals/nanocrystallites or having at least one nanoscale dimension. In some embodiments, a TE nanocomposite material in accordance with the present invention comprises at least one network that includes areas of still another material. In some embodiments, the nanocrystals/nanocrystallites used in a TE nanocomposite material in accordance with the present invention can range in dimensions from 1 nm to 800 nm. In some embodiments, at least one nanoscale length dimension of the nanoscale constituents used in a TE nanocomposite material in accordance with the present invention can have this dimension in the range of 1 nm to 800 nm. In some embodiments, at least one nanoscale length dimension of the constituents used in a TE nanocomposite material in accordance with the present invention can have this dimension less than 1 nm. In some embodiments, a TE nanocomposite material in accordance with the present invention can comprise strongly electronically coupled nanoscale networks with p- or n-type conductivity. TE nanocomposite materials in accordance with the present invention include interpenetrating networks of p- or n-type semiconductor domains and at least one another component, typically an insulator or dielectric, which provides efficient phonon scattering behaving as a thermal barrier. Semiconductors responsible for charge transport in TE nanocomposite materials that can be used in accordance with the present invention include, but are not limited to, chalcogenides and their alloys, simple and compound semiconductors and their alloys, and compositions such as SnSe, Bi2Te3, Bi—Te alloys, BiSbTe alloys, Bi2T3/CdTe core/shells, Zn—Sb alloys, Si, Ge, SiGe, Mg2Si, SrTiO3, NaCo2O4, Zn4Sb3, Co—Sb alloys, and ZnO, while the insulator/dielectrics responsible for reduced thermal transport include insulators or dielectrics such as carbides, oxides, nitrides, fluorides, silicides, phosphides, sulfides, chlorides, and their alloys, including but not limited to SiC, Al2O3, ZrO2, HfO2, SiO2, Gd2Zr2O7, and (Zr,Hf)3Y3O12, Si3N4, AlN, ScN, MgF, CaF, ZnF, AlP, SiS2, LiCl, NaCl, MgCl2, CaCl2. It will be noted that one skilled in the art will readily recognize that the listed materials are exemplary only, and that other suitable materials can be used, and TE nanocomposite materials made from such other suitable materials are deemed to be within the scope of the present invention. These and other aspects of this invention can be accomplished by the new process of making a thermoelectric nanocomposite described in detail in the disclosure of this invention. The TE nanocomposite materials of the present invention can be made by the processes described below. In accordance with the present invention, these processes include several steps described herein, with each step of the process being a preferred part, and all steps taken together make the process sufficient to produce a TE nanocomposite material having the desired properties. To provide clean interfaces between all constituents of the synthesized TE nanocomposite material, all processing steps are preferred to be conducted in a controlled atmosphere and with air-free transfer between steps. It should be noted, however, that the described processes are merely exemplary, and that other suitable processes for making a TE nanocomposite material in accordance with the present invention can be used, and all suitable processes and TE nanocomposite materials made from such processes are deemed to be within the scope of the present invention. The flow diagram inFIG.2and the block schematics inFIGS.3A-3D,4A-4D,5A-5D, and6A-6Dillustrate aspects of the process steps used in various exemplary embodiments of processes for making a TE nanocomposite material in accordance with the present invention. The basic process steps in each of the embodiments described below are the same, and so will not be repeated in the description of each embodiment for the sake of brevity, with only the process steps that are different from those in other embodiments being described in detail. For example, in the description of the second embodiment of a method for making a TE nanocomposite material in accordance with the present invention, Steps I, II, and IV proceed as described with respect to the first embodiment, with only Step III being described in detail. Thus, as shown as Step201inFIG.2and as schematically illustrated inFIG.3A, Step I in an exemplary first embodiment of this process includes selecting or making a powder consisting of particles or/and nanoparticles of a p- or n-type semiconductor material X1, which mainly controls the electronic transport properties of a TE material. The powder of the semiconductor material can be made by any suitable technique such as ball milling, laser ablation, precipitation from solution, or hydrothermal and/or ammonothermal synthesis. In many embodiments, the powder will be a nanopowder comprising nanoparticles having a particle size of about 1 nm to about 800 nm. In some embodiments a particle size can be larger than 800 nm. In an optional step201a, adsorbates such as water or oxides from the powder surface can also be removed in this Step I before proceeding to the next steps. This surface cleaning step can be accomplished by any suitable technique, though it is preferred that the cleaning is conducted in a furnace at elevated temperatures in a controlled atmosphere. Oxide removal can be conducted chemically or at elevated temperatures by reduction in an atmosphere with hydrogen. In Step II of the process for making a TE nanocomposite material in accordance with the present invention, shown as Step202inFIG.2and inFIG.3B, the powder of material X1is formed into a porous compact, creating a particle or nanoparticle interconnected network having an open porosity that permits a gas or a liquid to permeate the compact. The porous compact made in this Step can be made by any existing technique such as techniques involving assembling or growing blocks of a porous compact or techniques making pores in existing material. In some cases, the compact can be made by pressing the powder of material X1in the container or die to form what is usually called a green compact. In other embodiments, the porous compact can be made by sintering the loose nanoparticle powder such that particles neck without densification and form strong chemical or metallic bonds with each other. In an optional step202ashown inFIG.2, the green porous compact of material X1can be partially sintered while preserving an open porosity and making strong chemical or metallic bonds between particles. In Step III of the process for making a TE nanocomposite material in accordance with the present invention, shown as Step203inFIG.2and schematically inFIG.3C, the porous compact of material X1, which initially has a form similar to that shown by the schematic inFIG.3B, is infilled with a second material which is intended to minimize thermal transport in the TE material by increasing phonon scattering. In some embodiments, this second material Y1can be the same semiconductor material as X1, while in other embodiments, the second material Y1can be a different semiconductor material or an insulator/dielectric material, as shown in as shown inFIG.3CandFIG.6A, so long as this second material Y1provides efficient phonon scattering in the final TE nanocomposite material so as to reduce its thermal conductivity while maintaining or improving electrical transport properties provided by p- or n-type material X1. During this infilling step, a continuous or discontinuous conformal layer of the second material Y1i is applied to partially or completely coat all available surfaces in the pores inside the X1compact, as illustrated by the schematics inFIGS.3C and6A, to form a composite material consisting of a p- or n-type semiconductor network provided by material X1and the second material Y1. Infilling the porous compact and conformally coating the all available surfaces of X1with this second material requires precise control of the nanoscale thickness and/or of the amount and uniform distribution of the deposited second material Y1on the surfaces of X1. While atomic layer deposition (ALD) may often be the preferred technique for infilling and depositing the second material Y1on the surfaces of X1, this infilling/depositing step can be performed by any available technique for thin film deposition, such as chemical vapor deposition (CVD), atomic layer deposition (ALD), electro-chemical deposition, chemical deposition from solution, etc., or infilling by infiltration by melt, from liquid solution, etc. Finally, in Step IV (shown as Step204inFIG.2and schematically inFIG.3D), the composite material formed in Step III is sintered to remove residual porosity from the composite material so as to form a solid having an intimately connected percolated p- or n-type network of X1and a separate network of Y1bonded to X1, and having strong chemical bonds at all interfaces between materials X1and Y1. While in some cases, the sintering process can result in a material having at least some residual porosity, the sintering process should be conducted in a manner that preserves the intended structure of the composite and maintains a p- or n-type semiconductor network X1that percolates charge within the solid semiconductor/insulator/dielectric material Y1. The final result is a TE nanocomposite solid comprising at least one component at nanoscale such as that illustrated by the block schematic inFIGS.3D and6Aand having a p- or n-type network formed by semiconductor material X1which percolates charge through a solid formed from semiconductor/insulator/dielectric material Y1, where Y1provides efficient phonon scattering in the final TE nanocomposite material so as to reduce its thermal conductivity while maintaining or improving electrical transport properties provided by the p- or n-type material X1. This sintering step can occur either inside or outside the deposition chamber, so long as any transfer of the material outside the deposition chamber is preferred to be conducted in a controlled atmosphere and with air-free transfer so as to provide clean interfaces within the thermoelectric nanocomposite. Before the sintering step the material after the deposition can be annealed in the deposition chamber or in a furnace to remove any unwanted species, and then can be sintered either inside or outside the deposition chamber or the furnace, with any transfer of the material outside the deposition chamber or the furnace is preferably being conducted in a controlled atmosphere and with air-free transfer so as to provide clean interfaces within the thermoelectric nanocomposite. In a second embodiment of a process for making a TE nanocomposite material in accordance with the present invention, Steps I, II, and IV proceed as described above with respect to the first embodiment. In Step III of this second embodiment, the process of infilling and conformally coating all available surfaces inside the porous compact of material X1with a material Y1is interrupted while the compact retains an open porosity, and the step of infilling is repeated with a second metal/semiconductor/insulator/dielectric material Y2, as illustrated by the block schematic shown inFIG.6B. Material Y1can coat all available surfaces partially or completely and material Y2can also coat all available surfaces partially or completely. Y1and Y2can be metal or semiconductor, or dielectric as long as their combination will suppress thermal transport in the final TE nanocomposite material. In a third embodiment of the process for making a TE nanocomposite material in accordance with the present invention, Steps I and II also proceed as described above with respect to the first embodiment, but in this third embodiment, Step III of infilling and conformally coating all available surfaces inside the porous compact of material X1with a material Y1is interrupted while the compact retains an open porosity, with the steps of infilling being repeated with materials Y2, Y3, . . . , YN-1and finally with material YN, where materials Y1, Y2, Y3, . . . YNcan be the same or different and can be any materials including semiconductors, metals, or insulators, with the choice of material(s) being determined by the desired properties and application of the final TE material. Materials Y1, Y2, Y3, . . . YNcan coat all available surfaces partially or completely. In a fourth embodiment of a process for making a TE nanocomposite material in accordance with the present invention, aspects of which are illustrated inFIGS.4A-4D and6C, Steps I, II, and IV proceed as described above with respect to the first embodiment, except that instead of single-material particles or nanoparticles, the starting material comprises core/shell nanoparticles having a core of material X1and a shell of material X2, as illustrated by the schematic inFIG.4A. The material X2shell can be a continuous film as shown inFIG.4Aor can be a discontinuous film comprising separate or non-separate islands, nanoparticles or nanocrystals which can percolate or not percolate on the surface of particle X1. Material X2can be any material including semiconductors, metals and dielectrics depending on design of the TE material. As illustrated inFIG.4B, these X1/X2core/shell nanoparticles are then formed into a porous green compact, and are then infilled with an material Y1suppressing heat transport as illustrated inFIGS.4C and6D, which is made to conformally coat, partially or completely, all available surfaces in the X1/X2core/shell green compact. The infilled compact is then sintered (step IV), as illustrated inFIG.4D, to form a solid TE material in which the initial core/shell X1/X2particles percolate through a Y1matrix, where Y1provides efficient phonon scattering in the final TE nanocomposite material so as to reduce its thermal conductivity while maintaining the electrical properties provided by p- or n-type materials X1or/and X2. In a fifth embodiment of a process for making a TE nanocomposite material in accordance with the present invention, the process of infilling and conformally coating all available surfaces inside the porous compact of material X1/X2with a material Y1(semiconductor, metal, dielectric, etc.) is interrupted while the compact retains an open porosity and the step of infilling is repeated with a material Y2, where materials Y1and Y2can be any materials including semiconductors, metals and dielectrics, with the choice of material(s) being determined by the desired properties and application of the final TE nanocomposite material. In an exemplary embodiment, material Y1can be ZrO2and material Y2can be ZnO. In a sixth embodiment of a process for making a TE nanocomposite material in accordance with the present invention, the process of infilling and conformally coating all available surfaces inside the porous compact of the material X1/X2is repeated with materials Y1, Y2, . . . , YN-1while the compact retains an open porosity for the final infilling step with material YN. Any one or more of materials Y1, Y2, Y3, . . . YNcan be any materials including semiconductors, metals and dielectrics, with the choice of material(s) being determined by the desired properties and application of the final TE material. In a seventh embodiment of a process for making a TE nanocomposite material in accordance with the present invention, the starting powder consists of core/shell nanoparticles having a structure X1/X2/ . . . /XNwhere material X1is the core, X2. . . XN-1are intermediate continuous or discontinuous layers, and XNis the outer continuous or discontinuous shell, where X1, X2, . . . XNcan be any materials including semiconductors, metals and dielectrics/insulators with at least one a semiconductor which has p- or n-type conductivity providing charge transport through the final TE material. The materials choices depend on the desired properties and application of the final TE material. For example, in some cases XNcan be very thin insulator, while XN-1is semiconductor, with electrons from XN-1tunneling through the XNshell in the final product. In another example XNcan be islands of insulator letting parts XN-1semiconductor of one particle to be in a direct contact with XN-1semiconductor of another particle when they will be used to make porous compact. Yet, in another example XNcan be islands of a metal letting parts XN-1semiconductor of one particle to be in a direct contact with XN-1semiconductor of another particle when they will be used to make porous compact. Thus, Step I in this seventh embodiment includes the step of making or selecting nanopowder consisting of X1/X2/ . . . /XNcore/shell nanoparticles where material XNis an outer shell. In Step II of this seventh embodiment, the X1/X2/ . . . /XNcore/shell nanopowder of the material is formed into a porous compact, creating a core/shell particle or nanoparticle network having an open porosity as described above with respect to the first embodiment. In Step III of this seventh embodiment, the porous compact of the X1/X2/ . . . /XNmaterial is infilled with a material Y1. In some embodiments, Y1can be the same semiconductor material as XN, while in other embodiments, Y1can be a different semiconductor material or an insulator/dielectric material, so long as the addition of Y1increases phonon scattering in the final TE nanocomposite material so as to reduce its thermal conductivity while minimally affecting the electrical transport provided by p- or n-type X1/X2/ . . . /XN. During this infilling step, the Y1material is made to conformally and completely or incompletely coat all available surfaces inside the compact formed from the X1/X2/ . . . /XNnanoparticles using any suitable technique, e.g., atomic layer deposition (ALD), with the result being a composite material comprising percolated X1/X2/ . . . /XNnetwork and Y1network or domains. This composite material can then be sintered as in Step IV of the process described above to form the final TE material with charge transport provided by the initial X1/X2/ . . . /XNcore/shell particles which percolate charge through a solid formed from X1/X2/ . . . /XNand material Y1, where Y1increases phonon scattering in the final TE nanocomposite material so as to reduce its thermal conductivity while maintaining or improving electrical transport properties provided by the p- or n-type X1/X2/ . . . /XNstructure. In an eighth embodiment of a process for making a TE nanocomposite material in accordance with the present invention, the process of infilling and conformally partially or completely coating all available surfaces inside the porous compact of material X1/X2/ . . . /XNwith a material Y1is interrupted while the compact retains an open porosity and the step of infilling is repeated with a material Y2, where materials Y1and Y2can be any materials including semiconductors, metals and dielectrics, with the choice of material(s) being determined by the desired properties and application of the final TE nanocomposite material. In a ninth embodiment of a process for making a TE nanocomposite material in accordance with the present invention, the process of infilling and conformally coating all available surfaces inside the porous compact of the material X1/X2/ . . . /XNin Step III is repeated with any materials Y1, Y2, . . . , YN-1including metal/semiconductor/insulator/dielectric to have a multiple coatings on the surfaces while the compact retains an open porosity for the final infilling step with material YN. Any Y1, Y2, . . . , YNmaterial can partially or completely coat all available surfaces. In Step IV of this embodiment, the formed composite material is sintered in order to remove residual porosity and form a solid with intimately connected p- or n-type networks and having strong chemical bonds at all interfaces between materials. In some cases, the sintering process can result in a material having some porosity. The sintering process should be conducted in a manner that preserves the intended structure of the composite with p- or n-type semiconductor networks that percolate charge and results in a solid thermoelectric material that has no porosity while retaining the original nanoscale structure. The final TE nanocomposite material has a p- or n-type network formed by X1/X2/ . . . /XNwhich percolates through a solid formed from X1/X2/ . . . /XNand Y1, Y2, . . . , YN-1, YNmaterials, where the combination of Y1, Y2, . . . , YN-1, YNmaterials increase phonon scattering, thereby suppressing heat transport while maintaining or improving electronic transport provided by p- or n-type X1/X2/ . . . /XNmaterial structure, e.g., by increasing the Seebeck coefficient of the TE material. In some cases of the first three embodiments of a process for making a TE nanocomposite material described above, X1can be an insulator or a semiconductor and Y1, Y2, . . . , YN-1, YNcan be any materials including semiconductors, metals and dielectrics/insulators, with at least one Y1, Y2, . . . , YN-1, YNmaterial being a semiconductor which has p- or n-type conductivity providing charge transport through the final TE material, with X1enhancing phonon scattering in the final TE nanocomposite material to reduce its thermal conductivity while maintaining or improving electronic transport properties provided by p- or n-type Y1, Y2, . . . , YN-1, YNmaterial. In some cases of the fourth to ninth embodiments described above, materials X1/ . . . /XNcan be any materials such as a metal, a semiconductor or a dielectric leading to increased phonon scattering in the final TE nanocomposite material and reduction of its thermal conductivity, while maintaining or improving electronic transport properties provided by p- or n-type Y1, Y2, . . . , YN-1, YNmaterial. Y1. . . YNcan be any material, with at least one is a p- or n-type semiconductor forming a percolated network of charge transport throughout the entire thermoelectric material. In some embodiments, a TE nanocomposite material in accordance with the present invention can be made from one or more types of nanoparticles A, B, etc., at least one of them having n- or p-type conductivity, where the nanoparticles are sintered as described in the previous embodiments, to form a solid in which at least one type of the particles with n- or p-type conductivity forming a percolated network of charge transport throughout the entire material, while other nanoparticles suppress the heat transport. In some such embodiments, one or more of nanoparticles A, B, etc., can be core/shell nanoparticles having one or more shell, and where the nanoparticles are sintered to form a solid having at least one percolation path or network with p- or n-type conductivity throughout the entire material. For example,FIGS.5A-5Dshow shows exemplary steps for making TE nanocomposite material in the case of one core/shell nanoparticle A with one shell. In all of these embodiments, a TE nanocomposite solid can be obtained, where the TE nanocomposite solid that contains interpenetrating three-dimensional p-type or n-type networks that percolate throughout the solid. Band-like transport of electrons or holes across the entire TE solid is ensured by sufficiently large cross-sectional areas of the conductive n-type or p-type channels; the former are achieved through the sintering process and through the heavy doping of the p-type or n-type networks. These and other suitable configurations of TE materials would be readily understood to be possible by one skilled in the art are all deemed to be within the scope and spirit of the present invention. Example In this example, a thermoelectric nanocomposites made from p-type silicon (Si) nanopowder with aluminum oxide (Al2O3) and p-type silicon (Si) nanopowder with zirconium oxide (ZrO2) made in accordance with the first embodiment are demonstrated. Si nanopowder with p-type conductivity is made by high-energy milling in pure argon of Si bulk material doped with boron, having resistivity of about 0.001-0.005 ohm·cm. The resulting average crystallite size of the milled nanopowder is 30 nm. The nanopowder is annealed at 450° C. for 2 hours in pure argon to remove moisture and other adsorbates from the powder surface. After cleaning, the powder is transferred to a glovebox (GB) without exposure to air. Inside the GB the powder is compacted into a cylindrical shape 10 millimeters in diameter and 1 millimeter in height. The same procedure was repeated to make the second compact. Both compacts are transferred to a furnace without exposure to air and pre-sintered at 1000° C. for 5 minutes in pure argon. After pre-sintering, compacts have 45% porosity. Following the pre-sintering, one compact is transferred to an ALD reactor in which an amorphous Al2O3coating approximately 0.75 nm in thickness is deposited on all Si surfaces inside the pores. The Al2O3coating is deposited via ALD at 180° C. using TMA as the Al precursor and water as the oxidant. Following the pre-sintering, another compact is transferred to an ALD reactor in which a ZrO2coating approximately 0.75 nm in thickness is deposited on all Si surfaces inside the pores. The ZrO2coating is deposited via ALD at 180° C. using TDMAZ as the Zr precursor and water as the oxidant. After the ALD step the formed composite material is sintered under a pressure of 1.0 GPa and temperature of 900° C. in order to remove residual porosity and form a solid with intimately connected p-type Si domains surrounded with Al2O3or ZrO2and strong chemical bonds at all interfaces. The resulting materials represents a thermoelectric nanocomposite solids with percolating p-type semiconductor and insulator efficiently scattering phonons and providing low thermal conductivity. Thermal transport properties of these TE nanocomposite solids are compared with each other and with bulk Si and nanocrystalline Si. Plots of thermal conductivity are shown inFIG.7. Thermal conductivity of pure Si is substantially dropped in nanocrystalline Si when compared with bulk Si. It is a clear indication of enhanced phonon scattering on grain boundaries. Addition of very thin oxide films to the nanocomposites further reduced thermal conductivity (k) which leads to improved figure of merit ZT of thermoelectric material following the formula ZT=σS2Tκ. Thus, the present disclosure describes various embodiments of a thermoelectric nanocomposite material comprising p- or n-type semiconductor nanoparticles of a material X in an insulator/dielectric matrix of a material Y, where the insulator/dielectric material Y provides efficient phonon scattering so as to reduce the final TE material's thermal conductivity while maintaining or improving the electrical transport properties provided by the p- or n-type material X. Although particular embodiments, aspects, and features have been described and illustrated, one skilled in the art would readily appreciate that the invention described herein is not limited to only those embodiments, aspects, and features but also contemplates any and all modifications and alternative embodiments that are within the spirit and scope of the underlying invention described and claimed herein. The present application contemplates any and all modifications within the spirit and scope of the underlying invention described and claimed herein, and all such modifications and alternative embodiments are deemed to be within the scope and spirit of the present disclosure. | 31,244 |
11944012 | DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS A control unit1and an actuator2are represented schematically inFIG.1; in each instance, only the relevant electronic components of control unit1and actuator2being shown. In the representation ofFIG.1, the components of control unit1are shown to the left of dashed separating line12, and the components of actuator2are shown to the right of dashed separating line12. Actuator2is an actuator, which includes a piezoelectric element3. Such a piezoelectric element3is a mechanical actuator, which experiences a change in length on the basis of an applied voltage. This change in length may be used directly as a mechanical actuator. Such actuators are used, for example, as valves for the dosed injection of liquids, such as fuel into a motor. Piezoelectric element3is operated by control unit1, by appropriately controlling the MOSFET transistors21,22, and24taking the form of switches. Alternatively, switches21,22,24may also be formed by other transistors, such as IGBTs. A first terminal31of piezoelectric element3is connected by switch21to a high-voltage terminal33of control unit1. A voltage difference of, for example, 250 V with respect to a grounded connection34is applied to high-voltage terminal33of control unit1. First terminal31of piezoelectric element3is connected to a grounded connection34of control unit1by switch22. Therefore, by alternately operating switches21and22, terminal31of actuator2, that is, of piezoelectric element3, may be connected selectively to a control voltage of 250 V or ground, through which piezoelectric element3contracts and expands again. A second terminal32of piezoelectric element3is connected to a grounded connection34of control unit1by a switch24. During the activation of actuator2, that is, of piezoelectric element3, switch24is rendered conductive, and therefore, second terminal32is connected to grounded connection34. Thus, using a suitable program in control unit1, actuator2may be controlled by operating the transistors or switches21,22, and24. Consequently, piezoelectric element3may be controlled, and therefore, actuator2may be operated, as a function of a program stored in control unit1. Variations of the characteristics of actuator2caused by manufacturing are problematic for such control of actuator2by a control unit1. In order to compensate for such variations, it is desirable for the control of actuator2, that information regarding the variation of the characteristics of actuator2be known in control unit1. In the case of manufacturing actuator2, the characteristics of actuator2may be ascertained at the end of manufacturing and used for controlling piezoelectric element3. To that end, inFIG.1, actuator2includes control logic 9, which contains a memory internally, in which such information regarding the variations of characteristics of the actuator are stored. In addition, actuator2has further devices, which allow information stored in control logic 9 to be transmitted back to control unit1. A load7connected in series with a switch23taking the form of a transistor is positioned in parallel with piezoelectric element3. Therefore, by rendering switch23conductive, load7may be connected in parallel with piezoelectric element3. Switch23takes the form of a transistor, such as a MOSFET or IGBT, and is controlled by control logic 9 via a control line. Switch23may be brought into a conductive or nonconductive state, using a corresponding signal of control logic 9. In addition, actuator2also includes a voltage supply10, which has, in addition to a controller15, some capacitors for stabilizing the controlled voltage. Voltage supply10ensures a sufficient supply of voltage for control logic 9, if a voltage signal is applied sufficiently often to actuator2by control unit1. In this context, voltage supply10ensures a supply of voltage for control logic 9, even if no voltage signal is applied to actuator2by control unit1for a short time. Furthermore, control logic 9 also has 3 external terminals13, which are used for external programming and/or storage of data. To that end, information regarding characteristics of actuator2ascertained in the manufacture of actuator2is stored in control logic 9 via terminals13. A supply voltage is connected to one of terminals13, another terminal13is connected to ground, and the corresponding data signals are applied to the further terminal13. Control unit1may induce the transmission of data from actuator2, that is, from control logic 9 of actuator2, to control unit1, by applying a second voltage difference to actuator2. This second voltage difference preferably has an algebraic sign opposite to that of the first voltage difference. To that end, control unit1initially opens switch24, so that terminal32of actuator2is no longer connected to ground. In addition, switch21is opened, so that terminal31of actuator2is no longer connected to the terminal33, to which a high voltage of 250 V is applied. Switch22is rendered conductive, so that terminal31is continually connected to ground. In addition, switch25is rendered conductive. A supply voltage of, for example, 6 V, which, together with operational amplifier35, constitutes a constant voltage source, is applied to terminal39. To that end, an input of operational amplifier35is connected to output. Consequently, terminal32of actuator2is supplied with a constant voltage by closed switch25. This voltage at terminal32is designed to be so small, that no significant positioning movements of actuator2are able to be produced. Using diode36, voltage supply10is activated, and in this manner, control logic 9 is put into operation. The control logic 9 activated in this manner then generates appropriate control pulses to operate switch23, by which resistor7is connected in parallel with piezoelectric element3. As a result of this parallel connection, the flow of current through the constant voltage source, which is formed by operational amplifier35, is loaded by different currents as a function of whether or not resistor7is connected in parallel. This current may be verified, using a voltage drop at resistor37, which is situated between the output of operational amplifier35and switch25, in that the voltage drop before and after resistor37is detected by operational amplifier38. To that end, the two inputs of operational amplifier28before and after resistor37are connected. Accordingly, a signal, which corresponds to the corresponding circuit states of load7and/or to the switching states of switch23, is outputted at the output of operational amplifier38. The output signal of operational amplifier28may then be processed in suitable software of control unit1, in order to process the values stored in control logic 9. Thus, a corresponding value, which was programmed into control logic 9 during the manufacture of the actuator, may be transmitted to control unit1. The method of the present invention may be used, in particular, if certain characteristics of actuator2differ from each other due to variations in the manufacturing. For example, actuator2may be designed as a valve for injecting a liquid, and the volume of liquid injected by the valve may vary in response to the same applied control signals due to manufacturing variations. Such a valve may be used, for example, to inject fuel into an internal combustion engine. Such a variation of the valve could then be determined at the end of manufacturing, using test injections and appropriate measurements, and corresponding parameters, which describe this, are then stored in logic circuit9. To this end, logic circuit9includes external terminals13, via which initial operation of logic chip9may take place, and thus, corresponding measurement data may be programmed in. If actuator2is then operated together with a control unit1, these data stored in control logic 9 would be transmitted either in the event of initial operation or also from time to time during continuous operation. In this manner, negative effects due to manufacturing variations during the manufacture of the actuators may be prevented. Another alternative specific embodiment of the actuator2according to the present invention is shown inFIG.2. Reference numerals31,32,36,3,23,7,10,15,9and13denote again the same objects having the same functions as were described with regard toFIG.1. In contrast toFIG.1, however, terminals13in actuator2may no longer be contacted from the outside or are given other functions in the finished state. Thus, the storing of data in control logic 9 may not take place via terminals13. In the example ofFIG.2, storage in control logic 9 is accomplished by applying a different voltage to terminal32that is, in particular, higher than what may occur in normal operation between control unit1and actuator2. If, for example, a voltage of 6 Volts is applied by control unit1to terminal32, then a voltage of 8 Volts may be applied for the purpose of storing data in control logic 9. An increased voltage is then applied to the cathode of diode36, as well, and is detected by the programming circuit40connected to it. When the increased voltage is applied, then, by appropriately clocking the voltage signal between terminals32and31, a corresponding data word may be transmitted to programming circuit40and stored in control logic 9 via line41. | 9,340 |
11944013 | It will be appreciated that for simplicity and clarity of illustration, elements shown in the figures have not necessarily been drawn to scale. For example, the dimensions of some of the elements may be exaggerated relative to other elements for clarity. Further, where considered appropriate, reference numbers may be repeated among the figures to indicate corresponding or analogous features. DETAILED DESCRIPTION Detailed embodiments of the claimed structures and methods are disclosed herein; however, it can be understood that the disclosed embodiments are merely illustrative of the claimed structures and methods that may be embodied in various forms. This invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. In the description, details of well-known features and techniques may be omitted to avoid unnecessarily obscuring the presented embodiments. References in the specification to “one embodiment”, “an embodiment”, “an example embodiment”, etc., indicate that the embodiment described may include a particular feature, structure, or characteristic, but every embodiment may not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Further, when a particular feature, structure, or characteristic is described in connection with an embodiment, it is submitted that it is within the knowledge of one skilled in the art to affect such feature, structure, or characteristic in connection with other embodiments whether or not explicitly described. It will be understood that when an element as a layer, region or substrate is referred to as being “on” or “over” another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” or “directly over” another element, there are no intervening elements present. It will also be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present. In the interest of not obscuring the presentation of embodiments of the present invention, in the following detailed description, some processing steps or operations that are known in the art may have been combined together for presentation and for illustration purposes and in some instances may have not been described in detail. In other instances, some processing steps or operations that are known in the art may not be described at all. It should be understood that the following description is rather focused on the distinctive features or elements of various embodiments of the present invention. As stated above, magnetoresistive random-access memory (hereinafter “MRAM”) devices are a non-volatile computer memory technology. MRAM data is stored by magnetic storage elements. The elements are formed from two ferromagnetic layers, each of which can hold a magnetic field, separated by a spin conductor layer. One of the two layers is a reference magnet or a reference layer set to a particular polarity, while the remaining layer's field can be changed to match that of an external field to store memory and is termed the “free magnet” or “free-layer”. The magnetic reference layer may be referred to as a reference layer, and the remaining layer may be referred to as a free layer. This configuration is known as the magnetic tunnel junction (hereinafter “MTJ”) and is the simplest structure for a MRAM bit of memory. A memory device is built from a grid of such memory cells or bits. In some configurations of MRAM, such as the type further discussed herein, the magnetization of the magnetic reference layer is fixed in one direction (up or down), and the direction of the magnetic free layer can be switched by external forces, such as an external magnetic field or a spin-transfer torque generating charge current. A smaller current (of either polarity) can be used to read resistance of the device, which depends on relative orientations of the magnetizations of the magnetic free layer and the magnetic reference layer. The resistance is typically higher which the magnetizations are anti-parallel and lower when they are parallel, though this can be reversed, depending on materials used in fabrication of the MRAM. The present application relates to magnetoresistive random access memory (MRAM). More particularly, the present application relates to an embedded MRAM (eMRAM), which is embedded between an M1 layer, metal layer 1, and an M2 layer, metal layer 2, which can be integrated into back-end-of-the-line (BEOL) as a magnetic tunnel junction (MTJ) structure and can be integrated into the back-end-of-the-line (BEOL) processing of semiconductor technologies (such as CMOS technologies). One type of MRAM that can use MTJ is spin-transfer torque MRAM (hereinafter “MTT-MRAM”). STT MRAM has an advantage of lower power consumption and better scalability over conventional MRAM which uses magnetic fields to flip the active elements. In STT MRAM, spin-transfer torque is used to flip (switch) the orientation of the magnetic free layer. For an STT MRAM device, a current passing through the MTJ structure is used to switch, or “write” the bit-state of the MTJ memory element. A current passing down through the MTJ structure makes the magnetic free layer parallel to the magnetic reference layer, while a current passed up through the MTJ structure makes the magnetic free layer anti-parallel to the magnetic reference layer. In advanced Front End of Line (FEOL) technology, cobalt, Co, may be used for metal lines, vias, contacts and other areas which require electrical connection. Cobalt is ferromagnetic, which has a high susceptibility to magnetization with a strong stray electromagnetic field. When forming MTJ memory elements, cobalt in FEOL and Middle of Line (MOL) layers of a structure may adversely affect stored MTJ memory elements by affecting the bit-state of the MTJ memory element. The use of cobalt in the structure may impact thermal stability and reliability of the eMRAM applications. The use of Co can introduce stray field in the MTJ region, changing a balance of the AP and P state of the MTJ. Depending on the direction of the stray field, the energy barrier of either AP or P state can be reduced, making the MTJ more vulnerable to thermal fluctuation, thus affecting the thermal stability. Memory elements in MTJ may be stored in an AP state (high resistance state) or in a P state (low resistance state). Similar as the thermal stability, due to the energy barrier change caused by the stray field, reliability is affected by possible changing of stored MTJ memory element states. The present invention relates, generally, to the field of semiconductor manufacturing, and more particularly to fabricating a magnetic tunnel junction device in a structure over FEOL and MOL layers, where any cobalt layers within the FEOL and MOL layers have a non-magnetic layer within the cobalt layer. This new FEOL and MOL metallization integration scheme can help reduce stray electromagnetic fields in a MTJ memory element for an eMRAM application. Referring now toFIG.1, a graph1000of oscillatory interlayer exchange coupling as a function of a thickness of a non-magnetic layer between two magnetic layers is shown according to an exemplary embodiment. A thickness tNM, is shown along the horizontal axis, which is the thickness of a non-magnetic layer between two ferromagnetic layers. The vertical axis is interlayer exchange coupling, JIEC, which varies in an oscillatory pattern from a strong positive value, to a strong negative value, and oscillating from smaller and smaller peaks, positive and negative. Values of JIECwhich are positive indicate that for those corresponding thicknesses, tNM, of the non-magnetic layer between two ferromagnetic layers, there is an influence of a magnetic field of a first layer of the two ferromagnetic layers on a second layer of the two ferromagnetic layers. In other words, if the first layer has a magnetic field, this magnetic field will influence a magnetic field of the second layer. Also, if the second layer has a magnetic field, this magnetic field will influence a magnetic field of the first layer. A greater value of JIECindicates a magnetic field on either the first or second layer will more strongly influence a magnetic field on the second or first layer. Values of JIECwhich are negative indicate that for those corresponding thicknesses, tNM, of the non-magnetic layer between two ferromagnetic layers, there is not an influence of a magnetic field of the first layer of the two ferromagnetic layers on the second layer of the two ferromagnetic layers. In other words, if the first layer has a magnetic field, this magnetic field will not influence a magnetic field of the second layer. Also, if the second layer has a magnetic field, this magnetic field will not influence a magnetic field of the first layer. A greater negative value of JIECindicates a magnetic field on either the first or second layer will have less influence of a magnetic field on the other layer. As shown inFIG.1, the NM layer between the two ferromagnetic layers may enhance or increase a ferromagnetic field from each of the ferromagnetic layers on the other one, shown as an increase in coupling on the graph1000, or may cause a cancellation or decrease of a ferromagnetic field from each of the ferromagnetic layers on the other one, as shown as a decrease, below 0, or cancelling of coupling on the graph1000, fluctuating between an enhancing and decreasing effect. At increased thickness of tNM, the two ferromagnetic layers may be decoupled, or have no affect on each other. In an embodiment, a non-magnetic layer may be used when forming an electrical contact, electrical via, or a metal layer when forming a MTJ device, and the non-magnetic layer may have a thickness, tNM, which has a least amount of influence of a magnetic field from one side of the non-magnetic layer to the other. The point A on the graph1000, shows a point where there is the least amount of influence of a magnetic field between two magnetic layers through a non-magnetic layer which has a thickness, tNMequal to a value of a, where the value of JIECwhich is the most negative, at a value of b. Referring now toFIG.2, a semiconductor structure100(hereinafter “structure”) at an intermediate stage of fabrication is shown according to an exemplary embodiment.FIG.1is a cross-sectional view of the structure100. The structure100may include several back end of line (“BEOL”) layers. In general, the back end of line (BEOL) is the second portion of integrated circuit fabrication where the individual devices (transistors, capacitors, resistors, etc.) are interconnected with wiring on the wafer. As shown inFIG.2, a first BEOL layer includes a BEOL dielectric layer10surrounding a BEOL metal layer12. A second BEOL layer formed on the first BEOL layer includes via dielectric layer14. The BEOL dielectric layer10may be formed by conformally depositing or growing a dielectric and performing an isotropic etch process. The BEOL dielectric layer10may include one or more layers. The BEOL dielectric layer10may be composed of, for example, silicon oxide (SiOx), silicon nitride (SiNx), silicon boron carbonitride (SiBCN), NBLoK, a low-k dielectric material (with k<4.0), including but not limited to, silicon oxide, spin-on-glass, a flowable oxide, a high density plasma oxide, borophosphosilicate glass (BPSG), or any combination thereof or any other suitable dielectric material. Two openings (not shown) may be formed in the BEOL dielectric layer10by, for example, reactive ion etching (ME), and stopping on a layer below the first BEOL layer for subsequent filling with the BEOL metal layer12. The BEOL metal layer12may be formed within the two openings (not shown) in the BEOL dielectric layer10, using known techniques. The BEOL metal layer12can include, for example, copper (Cu), tantalum nitride (TaN), tantalum (Ta), titanium (Ti), titanium nitride (TiN), or a combination thereof. The BEOL metal layer12can be formed by for example, chemical vapor deposition (CVD), physical vapor deposition (PVD), and atomic layer deposition (ALD) or a combination thereof. There may be any number of openings in the BEOL dielectric layer10, each filled with the BEOL metal layer12, on the structure100. A planarization process, such as, for example, chemical mechanical polishing (CMP), may be done to remove excess material from a top surface of the first BEOL layer of the structure100prior to forming the second BEOL layer, such that upper horizontal surfaces of the BEOL dielectric layer10and the BEOL metal layer12are coplanar. The second BEOL layer is formed on the first BEOL layer. The second BEOL layer includes the via dielectric layer14. The via dielectric layer14may be formed by conformally depositing or growing a dielectric and performing an isotropic etch process. The via dielectric layer14may include one or more layers. The via dielectric layer14is formed above the BEOL dielectric layer10and the BEOL metal layer12. The via dielectric layer14may be made of substantially the same material as the BEOL dielectric layer10. An opening16may be formed in the BEOL via dielectric layer14as described above regarding the opening (now shown) formed in the first BEOL layer, and stopping on the BEOL metal layer12of the first BEOL layer. Two openings16are shown, however any number of openings16may be formed on the structure100. Referring now toFIG.3, the structure100is shown according to an exemplary embodiment. A first via fill layer18may be formed. The first via fill layer18is formed within the opening16in the via dielectric layer14. In certain embodiments, the first via fill layer18may include a material such as cobalt (Co), tungsten (W), copper (Cu), tantalum nitride (TaN), tantalum (Ta), titanium (Ti), titanium nitride (TiN), titanium oxide carbon nitride (TiOCN), tantalum oxide carbon (TaOCN), or a combination of these materials. The first via fill layer18can be formed by for example, CVD, PVD and ALD or a combination thereof. In particular, the first via fill layer18is aligned with the BEOL metal layer12, providing an electrical connection between the first via fill layer18and the BEOL metal layer12. After the first via fill layer18is formed, the structure100is subjected to, for example, CMP to planarize the surface for further processing, such that upper horizontal surfaces of via dielectric layer106and the via fill layer108are coplanar. The structure100including the BEOL layers shown inFIG.2is a starting structure upon which the MTJ stacks are to be formed. Referring now toFIG.4, the structure100is shown according to an exemplary embodiment. The first via fill layer18may be recessed. A planarization process, such as, for example, chemical mechanical polishing (CMP), may be done to remove excess material from a top surface of the second BEOL layer of the structure100, such that upper horizontal surfaces of the via dielectric layer14and the first via fill layer18are coplanar. The first via fill layer18may be recessed, forming a second opening20. The first via fill layer18may be recessed selective to the via dielectric layer14, such that an upper surface of the first via fill layer18is below an upper surface of the via dielectric layer14. The first via fill layer18may be recessed by methods known in the art, such as dry or wet etch. Referring now toFIG.5, the structure100is shown according to an exemplary embodiment. A liner24may be formed. The liner24may be conformally deposited on the structure100, on upper and side surfaces of the via dielectric layer14and on an upper surface of the first via fill layer18. The liner24may be composed of, for example, ruthenium (Ru), chromium (Cr) or tungsten (W). The liner24may be deposited utilizing a conventional deposition process such as, for example, CVD, plasma enhanced chemical vapor deposition (PECVD), PVD or ALD. The liner24may be 10 nm thick, although a thickness less than or greater than 10 nm may be acceptable. The liner24may partially fill the second opening20along a lower surface and side surfaces of the second opening20. In a preferred embodiment, the liner24may include a non-magnetic (NM) conductive material and may have a preferred thickness, b, which corresponds to where there is the least amount of influence of a magnetic field between two magnetic layers through a non-magnetic layer. This corresponds to tNMequal to a value of a, where the value of JIECwhich is the most negative, at the value of b, as described above in regards to the graph1000. Referring now toFIG.6, the structure100is shown according to an exemplary embodiment. A second via fill layer26may be formed. The second via fill layer26may be formed within the second opening20in the via dielectric layer14. In certain embodiments, the second via fill layer26may include a material defined and formed as the first via fill layer18. Referring now toFIG.7, the structure100is shown according to an exemplary embodiment. A planarization of the structure100is performed. The structure100is subjected to, for example, CMP to planarize the surface for further processing, such that upper horizontal surfaces of the second via fill layer26, the via dielectric layer14and the liner24are coplanar. In this preferred embodiment, the first via fill layer18, the liner24and the second via fill layer24form an electrical connection in the via dielectric layer14. The first via fill layer18and the second via fill layer24may include cobalt, which is a ferromagnetic material and may be susceptible to magnetization with a strong stray electromagnetic field. The liner24between the first via fill layer18and the second via fill layer24may be formed of a NM conductive material can help reduce stray electromagnetic fields in MTJ memory elements formed in layers above. In particular, the second via fill layer26is aligned with the first via fill layer18and the BEOL metal layer12, providing a via for an electrical connection through the via dielectric layer14to the BEOL metal layer12. The via is a metal line which forms an electrical connection through the via dielectric layer14and is divided into two cobalt metal studs within the via dielectric layer14. The first via fill layer18may be referred to as a lower metal stud and the second via fill layer26may be referred to as an upper metal stud. Referring now toFIG.8, the structure100is shown according to an exemplary embodiment. A dielectric30and a bottom electrode32may be formed. The dielectric30may conformally cover the via dielectric layer14. The dielectric30may include one or more layers. The dielectric30may be formed and of a material as described above for the BEOL dielectric layer10. An opening (not shown) may be formed in the dielectric30as described above regarding the opening in the BEOL dielectric layer10. The bottom electrode32may be formed within the opening (not shown) in the dielectric30, using known techniques. The bottom electrode32may be formed and include material as described above in regards to the BEOL metal layer12. There may be any number of openings in the dielectric30, each filled with the bottom electrode32, on the structure100. In particular, the bottom electrode32is aligned with the second via fill layer26, the first via fill layer18and the BEOL metal layer12, providing an electrical connection between the bottom electrode32, the second via fill layer26, the first via fill layer18and the BEOL metal layer12. Referring now toFIG.9, the structure100is shown according to an exemplary embodiment, magnetoresistive random-access memory (“MRAM”) stack layers are formed, including a reference layer40, a tunneling barrier42, a free layer44, and also a top electrode46is formed. Each of the MRAM stack layers may be conformally formed on the structure100using known techniques. In formation of the MTJ stacks layers, the reference layer40is formed on the dielectric30and the bottom electrode32. The tunneling barrier layer42is formed on the reference layer40. In an embodiment, the tunneling barrier layer42is a barrier, such as a thin insulating layer or electric potential, between two electrically conducting materials. Electrons (or quasiparticles) pass through the tunneling barrier layer42by the process of quantum tunneling. In certain embodiments, the tunneling barrier layer42includes at least one sublayer composed of MgO. It should be appreciated that materials other than MgO can be used to form the tunneling barrier layer42. The free layer44is a magnetic free layer that is adjacent to tunneling barrier layer42so as to be opposite the reference layer40. The free layer44has a magnetic moment or magnetization that can be flipped. It should also be appreciated that the MTJ stack layers may include additional layers, omit certain layers, and each of the layers may include any number of sublayers. Moreover, the composition of layers and/or sublayers may be different between the different MRAM stacks. The top electrode38may be conformally formed on the free layer44, using known techniques. The top electrode38may be formed and include material as described above in regards to the BEOL metal layer12. Referring now toFIG.10, the structure100is shown according to an exemplary embodiment. An MTJ stack50is formed. The structure100may be patterned and etched using known techniques to form the MTJ stack50. As shown in the Figures, two MTJ stacks50are formed, however any number of MTJ stacks50may be formed. The MTJ stack50may be patterned in one or more steps by lithography and ion beam etch (IBE) or RIE. Aligned vertical portions of the top electrode46, the free layer44, the tunneling barrier layer42and the reference layer40may be removed selective to the dielectric30. Remaining vertical portions of the top electrode46, the free layer44, the tunneling barrier layer42and the reference layer40may form the MTJ stack50, and may be aligned over the bottom electrode32, the second via fill layer26, the first via fill layer18and the BEOL metal layer12. Referring now toFIG.11, the structure100is shown according to an exemplary embodiment. Sidewall spacers52and an upper dielectric54may be formed. The sidewall spacers52may be conformally formed on the structure100, on an exposed upper surface of the dielectric30, and on vertical side surfaces of the top electrode46, the free layer44, the tunneling barrier layer42and the reference layer40. The sidewall spacers52may be formed by PVD, ALD, PECVD, among other methods. The material of the sidewall spacers52may include silicon nitride (SiN), aluminum oxide (AlOx), titanium oxide (TiOx), silicon oxide (SiOx), boron nitride (BN), silicon boron carbonitride (SiBCN), or any combination thereof. In a preferred embodiment, the sidewall spacers52may have an optional pre-treatment with plasma oxygen (O), hydrogen (H), nitrogen (N) or ammonia (NH3), or any combination thereof. Patterning of the structure100may be performed using known techniques to remove the sidewall spacers52from an upper surface of the dielectric30and an upper surface of the top electrode46, selective to each of these layers, such that a remaining portion of the sidewall spacers52remain on vertical side surfaces of the top electrode46, the free layer44, the tunneling barrier layer42and the reference layer40. The upper dielectric54may conformally formed on the structure100, on an exposed upper surface of the dielectric30and the top electrode46, and on vertical side surfaces of the sidewall spacers52. The upper dielectric54may include one or more layers. The upper dielectric54may be formed and of a material as described above for the BEOL dielectric layer10. A chemical mechanical polishing (CMP) technique may be used to remove excess material and polish upper surfaces of the structure100such that upper horizontal surfaces of the upper dielectric54, the sidewall spacer52and the top electrode46and are coplanar. The resulting structure100includes an MTJ stack50which is formed over a via dielectric layer14, where the via dielectric layer14has openings for electrical connections which are filled with the first via fill layer18separated by the second via fill layer26by the liner24. Both the first via fill layer18and the second via fill layer26are within the via dielectric layer14and are both made with a ferromagnetic material, specifically cobalt. The liner24may be made of a NM material and may have a thickness, t, which corresponds to where there is the least amount of influence of a magnetic field between the two magnetic layers, the first via fill layer18and the second via fill layer26. The liner24is a NM layer within the cobalt layer and reduces stray electromagnetic fields which could negatively affect the MTJ stack50. The metal line which forms an electrical connection through the via dielectric layer14is divided into two cobalt metal studs within the via dielectric layer14. This method of dividing a cobalt metal line can be applied to contacts, vias, and other conductive structures made of cobalt. In the structure100, the method of dividing a cobalt metal line could be applied to the BEOL metal layer12of the first BEOL layer, and other cobalt conductive structures in the structure100. The descriptions of the various embodiments of the present invention have been presented for purposes of illustration, but are not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the invention. The terminology used herein was chosen to best explain the principles of the embodiment, the practical application or technical improvement over technologies found in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein. | 26,379 |
11944014 | DETAILED DESCRIPTION OF THE EMBODIMENTS FIG.1is a block diagram of a magnetic memory device10according to some embodiments of the inventive concepts. Referring toFIG.1, the magnetic memory device10may include a memory cell array11, a row decoder12, a column selector13, a read/write circuit14, and a control logic15. The memory cell array11may include a plurality of memory cells MCs (seeFIGS.2and3). The memory cell array11will be described in greater detail below with reference toFIG.2. The row decoder12may be connected to the memory cell array11through a plurality of word lines WL0through WL3(seeFIG.2). The row decoder12may select at least one of the plurality of word lines WL0through WL3(seeFIG.2) by decoding an address input from an external source (not shown). The column selector13may be connected to the memory cell array11through a plurality of bit lines BL0through BL3(seeFIG.2). The column selector13may select at least one of the plurality of bit lines BL0through BL3(seeFIG.2) by decoding the address input from the external source. The at least one bit line selected by the column selector13may be connected to the read/write circuit14. The read/write circuit14may provide a bit line voltage to the at least one bit line selected by the column selector13to write input data to the memory cell array11or read data stored in the memory cell array11. The control logic15may generate control signals to control the magnetic memory device10according to a command signal provided from the external source. The read/write circuit14may be controlled by the control signals. In some embodiments, the row decoder12and the column selector13may also be controlled by the control signals. FIG.2is a circuit diagram of the memory cell array11included in the magnetic memory device10(seeFIG.1) according to some embodiments of the inventive concepts. Referring toFIG.2, the memory cell array11may include the plurality of memory cells MCs. The plurality of memory cells MCs may be connected to the plurality of word lines WL0through WL3and the plurality of bit lines BL0through BL3. Each of the plurality of memory cells MCs may be connected between one of the plurality of word lines WL0through WL3and one of the plurality of bit lines BL0through BL3. Stated differently, each of the plurality of memory cells MCs may be respectively connected to one of the plurality of bit lines BL0through BL3, and respectively connected to one of the plurality of word lines WL0through WL3. Accordingly, a memory cell MC may be selected by selecting one of the plurality of word lines WL0through WL3and one of the plurality of bit lines BL0through BL3. Each of the plurality of memory cells MCs may include a memory unit ME and a switching unit SE. The memory unit ME of each of the plurality of memory cells MCs may include a variable resistor unit that may be switched into one of two types of resistance states in response to electrical signals applied to the memory unit ME. The switching unit SE of each of the plurality of memory cells MCs may be configured to selectively control flow of a current flowing through the memory unit ME of the memory cell MC. For example, the switching unit SE may include a field effect transistor, a diode transistor, or a bipolar transistor. The memory cell MC will be described in further detail below with reference toFIG.3. FIG.3is a schematic diagram of the memory cell MC included in the magnetic memory device10(seeFIG.1) according to some embodiments of the inventive concepts. Referring toFIG.3, the memory cell MC may include the memory unit ME and the switching unit SE. The memory unit ME may include a magnetic tunnel junction100. In some embodiments, the memory unit ME may further include a bottom electrode BE under the magnetic tunnel junction100and a top electrode TE on the magnetic tunnel junction100. That is, the magnetic tunnel junction100may be between the bottom electrode BE and the top electrode TE. Although reference is made to a top electrode TE and bottom electrode BE, it is to be understood that these references are for convenience of explanation and that the present disclosure is not limited to any particular orientation. The magnetic tunnel junction100may include a fixed layer130, a free layer150, and a tunnel barrier layer140between the fixed layer130and the free layer150. As shown inFIGS.5and6, the magnetic tunnel junction100may include more layers, and the fixed layer130and the free layer150may each include a plurality of layers. However, for convenience of explanation, the magnetic tunnel junction100is only schematically shown inFIG.3. Details of a configuration of the magnetic tunnel junction100will be described later with reference toFIGS.5and6. The fixed layer130may have a fixed magnetization direction, while the free layer150may have a variable magnetization direction. When magnetization directions of the fixed layer130and the free layer150are oriented in parallel to each other, the possibility that electrons are tunneled through the tunnel barrier layer140increases, and therefore, the magnetic tunnel junction100is in a low resistance state. On the contrary, when the magnetization directions of the fixed layer130and the free layer150are oriented opposite (that is, antiparallel) to each other, the possibility that the electrons are tunneled through the tunnel barrier layer140decreases, and therefore, the magnetic tunnel junction100is in a high resistance state. Consequently, the magnetic tunnel junction100may be switched between two electric resistance states, that is, the low resistance state and the high resistance state. Due to such a characteristic, the magnetic tunnel junction100may be used to store data. In some embodiments, the switching unit SE may include a field effect transistor. In some embodiments, a source line SL may be connected to a first source/drain of the switching unit SE, and the magnetic tunnel junction100may be connected to a second source/drain of the switching unit SE through the bottom electrode BE. In addition, a word line WL may be connected to a gate of the switching unit SE. The magnetic tunnel junction100may be connected to the source line SL through the bottom electrode BE and the switching unit SE, and may be connected to a bit line BL through the top electrode TE. In some embodiments, the bit line BL and the source line SL may be exchanged with each other. That is, the magnetic tunnel junction100may be connected to the bit line BL through the bottom electrode BE and the switching unit SE, and may be connected to the source line BL through the top electrode TE. Stated differently, either the free layer150or the fixed layer130of the magnetic tunnel junction100may be connected to the bit line BL through the bottom electrode BE and the switching unit SE, and the other of the fixed layer130and free layer150may be connected to the source line BL through the top electrode TE. By turning on/off the switching unit SE through controlling a voltage of the word line WL, the magnetic tunnel junction100may be selectively connected to the source line SL. For a write operation of a memory device, the switching unit SE may be turned on by applying a voltage to the word line WL, and a write current may be applied between the bit line BL and the source line SL. Here, the magnetization direction of the free layer150may be determined according to directions of the write current. For a read operation of the magnetic memory device10, the switching unit SE may be turned on by applying a voltage to the word line WL, and data stored in the magnetic tunnel junction100may be recognized by applying a read current from the bit line BL in a direction of the source line SL. Here, the read current is much smaller than the write current, and therefore, the magnetization direction of the free layer150may be not changed by the read current. FIG.4is a cross-sectional view of the magnetic memory device10according to some embodiments of the inventive concepts. Referring toFIG.4, the magnetic memory device10may include a substrate SB, the switching unit SE on the substrate SB, and the magnetic tunnel junction100connected to the switching unit SE. The substrate SB may include a semiconductor material such as a Group IV semiconductor material, a Group III-V semiconductor material, or a Group II-VI semiconductor material. The Group IV semiconductor material may include, for example silicon (Si), germanium (Ge), or SiGe. The Group III-V semiconductor material may include, for example, gallium arsenide (GaAs), indium phosphide (InP), gallium phosphide (GaP), indium arsenide (InAs), indium antimonide (InSb), or indium gallium arsenide (InGaAs). The Group II-VI semiconductor material may include, for example, zinc telluride (ZnTe) or cadmium sulfide (CdS). The substrate SB may include a bulk wafer or an epitaxial layer. The switching unit SE may include a gate structure G, which may be formed on the substrate SB, and a first source/drain structure SD1and a second source/drain structure SD2respectively adjacent to first and second sides of the gate structure G. The gate structure G may include a gate insulating layer GI, a gate electrode layer GE, and a gate capping layer GC stacked on the substrate SB. The gate structure G may further include a gate spacer layer GS on lateral or side surfaces of the gate insulating layer GI, the gate electrode layer GE, and the gate capping layer GC. In some embodiments, the gate insulating layer GI may include an interface layer on the substrate SB and a high-dielectric layer on the interface layer. The interface layer may include a low-dielectric material having a permittivity of 9 or less, for example, silicon oxide (SiO2), silicon nitride (SiN), or combinations thereof. In some embodiments, the interface layer may be omitted. The high-dielectric layer may include a material having a dielectric constant greater than that of SiO2, for example a material having a dielectric constant from about 10 to about 25. The high-dielectric layer may include, for example, hafnium oxide (HfO2), zirconium dioxide (ZrO2), aluminum oxide (Al2O3), or combinations thereof. The gate electrode layer GE may include a metal, a metal nitride, a metal carbide, a semiconductor, or combinations thereof. The metal may include titanium (Ti), tungsten (W), ruthenium (Ru), niobium (Nb), molybdenum (Mo), Hf, nickel (Ni), cobalt (Co), platinum (Pt), ytterbium (Yb), terbium (Tb), dysprosium (Dy), erbium (Er), palladium (Pd), or combinations thereof. The metal nitride may include titanium nitride (TiN), tantalum nitride (TaN), or a combination thereof. The metal carbide may include titanium aluminum carbide (TiAlC). The semiconductor may include polysilicon. The gate capping layer GC may include, for example, SiN. The gate spacer layer GS may include, for example, SiO2, SiN, or a combination thereof. The first source/drain structure SD1and the second source/drain structure SD2may each include a semiconductor material such as a Group IV semiconductor material, a Group III-V semiconductor material, or a Group II-VI semiconductor material. The Group IV semiconductor material may include, for example Si, Ge, or SiGe. The Group III-V semiconductor material may include, for example, gallium arsenide (GaAs), indium phosphide (InP), gallium phosphide (GaP), indium arsenide (InAs), indium antimonide (InSb), or indium gallium arsenide (InGaAs). The Group II-VI semiconductor material may include, for example, zinc telluride (ZnTe) or cadmium sulfide (CdS). For example, the first source/drain structure SD1and the second source/drain structure SD2may each include Si. In some embodiments, the first source/drain structure SD1and the second source/drain structure SD2may be formed from the substrate SB. In some embodiments, the first source/drain structure SD1and the second source/drain structure SD2may each include SiGe layers, respectively having different concentrations, and a Si capping layer. In some embodiments, the magnetic memory device10may further include a first interlayer insulating layer IL1covering the substrate SB and the switching unit SE. The first interlayer insulating layer IL1may include, for example, SiO2, SiN, or a combination thereof. The magnetic memory device10may further include a first conductive line L1and a second conductive line L2on the first interlayer insulating layer IL1. The magnetic memory device10may further include a first contact plug CP1and a second contact plug CP2that each penetrate the first interlayer insulating layer IL1. The first contact plug CP1may connect the first conductive line L1to the first source/drain structure SD1, and the second contact plug CP2may connect the second conductive line L2to the second source/drain structure SD2. The first conductive line L1may correspond to or be connected to the source line SL shown inFIG.3. The first conductive line L1, the second conductive line L2, the first contact plug CP1, and the second contact plug CP2may each include a metal and a metal barrier layer. The metal may include W, Ti, Ta, Al, copper (Cu), silver (Ag), gold (Au), or combinations thereof. The metal barrier layer may include Ti, Ta, TiN, TaN, or combinations thereof. In some embodiments, the magnetic memory device10may further include a second interlayer insulating layer IL2on the first interlayer insulating layer ILL and the second interlayer insulating layer IL may surround a side of the first conductive line L1and a side of the second conductive line L2. The magnetic memory device10may further include a third interlayer insulating layer IL3on the second interlayer insulating layer IL2. The second interlayer insulating layer IL2and the third interlayer insulating layer IL3may each include SiO2, SiN, or a combination thereof. The memory unit ME may be on the third interlayer insulating layer IL3. The bottom electrode BE and the top electrode TE may each include a metal, a metal nitride, or combinations thereof. For example, the bottom electrode BE and the top electrode TE may each include Ta, Ru, TaN, or combinations thereof. The magnetic tunnel junction100will be described in detail later with reference toFIGS.5and6. In some embodiments, the magnetic memory device10may further include a first via V1that penetrates the third interlayer insulating layer IL3and connects the bottom electrode BE to the second conductive line L2. The first via V1may include a metal and a metal barrier layer. The metal may include W, Ti, Ta, Al, Cu, Ag, Au, or combinations thereof. The metal barrier layer may include Ti, Ta, TiN, TaN, or combinations thereof. In some embodiments, the magnetic memory device10may further include a fourth interlayer insulating layer IL4that is on the third interlayer insulating layer IL3and surrounds the memory unit ME. In some embodiments, the magnetic memory device10may further include a fifth interlayer insulating layer IL5on the fourth interlayer insulating layer IL4. The fourth interlayer insulating layer IL4and the fifth interlayer insulating layer IL5may each include SiO2, SiN, or a combination thereof. In some embodiments, the magnetic memory device10may further include a third conductive line L3on the fifth interlayer insulating layer IL5. The third conductive line L3may correspond to or be connected to the bit line BL shown inFIG.3. In some embodiments, the magnetic memory device10may further include a second via V2which connects the third conductive line L3to the top electrode TE and penetrates the fifth interlayer insulating layer IL5. The third conductive line L3and the second via V2may each include a metal and a metal barrier layer. The metal may include W, Ti, Ta, Al, Cu, Ag, Au, or combinations thereof. The metal barrier layer may include Ti, Ta, TiN, TaN, or combinations thereof. FIG.5is a cross-sectional view of a magnetic tunnel junction100included in the magnetic memory device10(seeFIG.1) according to some embodiments of the inventive concepts. Referring toFIG.5, the magnetic tunnel junction100may include the fixed layer130, a polarization enhancement structure170, the tunnel barrier layer140, and the free layer150stacked in a vertical direction (the Z direction). That is, the magnetic tunnel junction100may include the fixed layer130, the polarization enhancement structure170on the fixed layer130, the tunnel barrier layer140on the polarization enhancement structure170, and the free layer150on the tunnel barrier layer140. In some embodiments, the magnetic tunnel junction100may further include a seed layer120under or below the fixed layer130. In some embodiments, the magnetic tunnel junction100may further include a buffer layer110under or below the seed layer120. In some embodiments, the magnetic tunnel junction100may further include a perpendicular magnetic anisotropy enhancement layer160on or above the free layer150. In some embodiments, the magnetic tunnel junction100may further include a capping layer190on or above the perpendicular magnetic anisotropy enhancement layer160. The buffer layer110may be configured to at least partially prevent a crystallinity of the bottom electrode BE (seeFIGS.1and2) from having influences on a crystallinity of layers on or above the buffer layer110, for example, the seed layer120, the fixed layer130, the polarization enhancement structure170, the tunnel barrier layer140, and the free layer150. In some embodiments, the buffer layer110may be amorphous. The buffer layer110may be non-magnetic or magnetic. In some embodiments, the buffer layer110may include XY, where X may include iron (Fe), Co, or a combination thereof, and Y may include Hf, yttrium (Y), Zr, or combinations thereof. The seed layer120may be configured to help the fixed layer130, the polarization enhancement structure170, the tunnel barrier layer140, and the free layer150respectively have desirable crystal structures. In some embodiments, the seed layer120may have a hexagonal close-packed (HCP) structure. In some embodiments, the seed layer120may be amorphous. The seed layer120may be non-magnetic or magnetic. In some embodiments, the seed layer120may include nichrome (NiCr), cobalt iron boride (CoFeB), magnesium (Mg), Ta, Ru, or combinations thereof. The fixed layer130may have a fixed magnetization direction. The fixed magnetization direction may be a vertical direction (the Z direction) or a direction opposite to the vertical direction (the −Z direction). In some embodiment, the fixed layer130may include a first fixed layer131on the seed layer120, an anti-parallel coupling layer133on the first fixed layer131, and a second fixed layer132on the anti-parallel coupling layer133. The first fixed layer131may also be referred to as a hard bias stack. The second fixed layer132may also be referred to as a reference layer. The anti-parallel coupling layer133may also be referred to as a synthetic antiferromagnetic (SAF) layer. Each of the first fixed layer131and the second fixed layer132may be crystalline. Each of the first fixed layer131and the second fixed layer132may be ferromagnetic. The first fixed layer131and the second fixed layer132may respectively have fixed magnetization directions. However, a magnetization direction of the second fixed layer132may be opposite to a magnetization direction of the first fixed layer131. For example, the magnetization direction of the first fixed layer131may be the vertical direction (the Z direction), while the magnetization of the second fixed layer132is the direction opposite to the vertical direction (the −Z direction). Each of the first fixed layer131and the second fixed layer132may include at least one of Co, Ni, and Fe. For example, each of the first fixed layer131and the second fixed layer132may include CoNi, CoFeB, CoCr, CoFe, CoPt, FeB, CoB, CoFeAl, or combinations thereof. The anti-parallel coupling layer133may help the magnetization direction of the first fixed layer131and the magnetization direction of the second fixed layer132be anti-parallel to each other. The anti-parallel coupling layer133may include, for example, Ru, iridium (Ir), rhenium (Re), rhodium (Rh), tellurium (Te), Y, Cr, Ag, Cu, or combinations thereof. For example, the anti-parallel coupling layer133may include Ru. The polarization enhancement structure170may include a plurality of polarization enhancement layers. For example, the polarization enhancement structure170may include a first polarization enhancement layer171aand a second polarization enhancement layer171b. The polarization enhancement structure170may also include at least one spacer layer, for example a first spacer layer172aand a second spacer layer172b. The first and second spacer layer172aand172bmay separate the plurality of polarization enhancement layers171aand172bfrom each other. That is, the plurality of polarization enhancement layers171aand171band the at least one spacer layer172aand172bmay be alternately stacked on the fixed layer130. When the polarization enhancement structure170includes only one polarization enhancement layer, polarization enhancement performance may be improved as a thickness of the polarization enhancement layer increases, but the perpendicular magnetic anisotropy thereof decreases. According to the inventive concept, by increasing the number of polarization enhancement layers, the polarization enhancement performance may be improved, and thicknesses T2and T4of the polarization enhancement layers171aand171bmay be not increased. Accordingly, decrease in perpendicular magnetic anisotropy may be prevented. Accordingly, as the decrease in perpendicular magnetic anisotropy may be prevented even at a high temperature, the heat resistance of the magnetic memory device including the magnetic tunnel junction100may be improved. By using the polarization enhancement structure170with improved perpendicular magnetic anisotropy, cell retention in a parallel to anti-parallel direction may be improved, and asymmetry between a switching current from the parallel direction to the anti-parallel direction and a switching current from the anti-parallel direction to the parallel direction may be improved. Each of the plurality of polarization enhancement layers171aand171bmay include a ferroelectric material. Each of the plurality of polarization enhancement layers171aand171bmay include, for example, at least one element among Co, Fe, and Ni, and at least one element from boron (B), Si, Zr, Hf, beryllium, Al, carbon (C), Mo, Ta, and Cu. For example, each of the polarization enhancement layers171aand171bmay include CoFeB. Each of the at least one spacer layers172aand172bmay include a non-magnetic material C1. In some embodiments, each of the at least one spacer layers172aand172bmay further include a ferromagnetic material. The non-magnetic material C1may induce interfacial perpendicular magnetic isotropic anisotropy on an interface between the plurality of polarization enhancement layers171aand171band the plurality of spacer layers172aand172b. The ferroelectric material C2may provide a magnetic path through the polarization enhancement structure170. In some embodiments, as shown inFIG.5, the non-magnetic material C1may construct grains, and the ferroelectric material C2may be at a grain boundary of the grains. In some embodiments, the ferroelectric material C2may form nano particles. The nano particles may have diameters from about 0.1 nm to about 10 nm. The nano particles of the ferromagnetic material C2may be dispersed with uniformity or without uniformity in the non-magnetic material. Alternatively, the non-magnetic material C1and the ferromagnetic material C2may be uniformly mixed as an alloy. The non-magnetic material C1may include W, Mo, Ta, Pt, Ir, Al, Hf, Cr, Ru, Nb, Zr, vanadium (V), Pd, C, B, oxygen (O), nitrogen (N), or combinations thereof. When Mo is used as the non-magnetic material C1, due to a relatively high thermal stability of Mo, the thermal stability of the polarization enhancement structure170and the magnetic tunnel junction100including the same may be improved. In addition, Mo may enhance exchange coupling between the plurality of polarization enhancement layers171aand171b. The ferroelectric material C2may include Co, Fe, Ni, gadolinium (Gd), samarium (Sm), neodymium (Nd), praseodymium (Pr), or combinations thereof. In some embodiments, the ferroelectric material C2may include CoFe. In some embodiments, each of the plurality of spacer layers172aand172bmay include MoCoFe. Each of the plurality of spacer layers172aand172bmay include the non-magnetic material in an amount equal to or greater than 50 at % and less than 100 at %. If each of the plurality of spacer layers172aand172bincluded the non-magnetic material C1at less than 50 at %, then the spacer layers172aand172bare entirely magnetic, and therefore, from a magnetic point of view, the plurality of spacer layers172aand172bmay not provide an interface to the plurality of polarization enhancement layers171aand171b. Accordingly, when each of the plurality of spacer layers172aand172bincludes the non-magnetic material C1less than 50 at %, the perpendicular magnetic anisotropy of the polarization enhancement structure170may decrease. Conversely, if each of the spacer layers172aand172bincluded the non-magnetic material C1at 100 at % then, due to non-existence of the ferromagnetic material C2providing the magnetic path, the exchange coupling between the plurality of polarization enhancement layers171aand171bdecreases, and therefore, the perpendicular magnetic anisotropy of the polarization enhancement structure170may decrease. Thicknesses T2and T4of the polarization enhancement layers171aand171bmay be from about 5 Å to about 20 Å. If the thicknesses T2and T4of the polarization enhancement layers171aand171bare less than about 5 Å, then a polarization enhancement effect of the polarization enhancement structure170may be insignificant. Conversely, if the thicknesses T2and T4of the polarization enhancement layers171aand171bare greater than about 20 Å, then the perpendicular magnetic anisotropy of the polarization enhancement structure170may decrease. Thicknesses T1and T3of the spacer layers172aand172bmay be from about 2 Å to about 15 Å. If the thicknesses T1and T3of the plurality of spacer layers172aand172bare respectively less than about 2 Å, then the plurality of spacer layers172aand172bmay be too thin, and therefore, from a magnetic point of view, the plurality of spacer layers172aand172bmay not provide the interface to the plurality of polarization enhancement layers171aand171b. Conversely, if the thicknesses T1and T3of the plurality of spacer layers172aand172bare respectively greater than about 15 Å, then the plurality of spacer layers172aand172bmay be too thick, and exchange coupling between the plurality of polarization enhancement layers171aand171bmay weaken, and accordingly, the perpendicular magnetic anisotropy of the polarization enhancement structure170may decrease. FIG.5shows that the polarization enhancement structure170includes two polarization enhancement layers171aand171band two spacer layers (e.g., the plurality of spacer layers172aand172b). However, the polarization enhancement structure170may include another number of polarization enhancement layers and another number of spacer layers. For example, the polarization enhancement structure170may include two to ten polarization enhancement layers and one to ten spacer layers. If the polarization enhancement structure170includes eleven or more polarization enhancement layers and/or eleven or more spacer layers, then the perpendicular magnetic anisotropy of the polarization enhancement structure170may become too large, and therefore, it may be difficult to switch the magnetic memory device from the parallel direction to the anti-parallel direction. According to the numbers of polarization enhancement layers and spacer layers included in the polarization enhancement structure170, a total thickness of the polarization enhancement structure170may be from about 12 Å to about 140 Å. In the embodiment shown inFIG.5, the polarization enhancement structure170may include a first spacer layer172a, a first polarization enhancement layer171aon the first spacer layer172a, a second spacer layer172bon the first polarization enhancement layer171a, and a second polarization enhancement layer171bon the second spacer layer172b. In some embodiments, unlike inFIG.5, the polarization enhancement structure170may include the first polarization enhancement layer171a, the first spacer layer172aon the first polarization enhancement layer171a, the second polarization enhancement layer171bon the first spacer layer172a, and the second spacer layer172bon the second polarization enhancement layer171b. In some embodiments, the thickness T1of the first spacer layer172aand the thickness T3of the second spacer layer172bincluded in the polarization enhancement structure170may be identical to each other. For example, the thickness T1of the first spacer layer172amay be identical to the thickness T3of the second spacer layer172b. In some embodiments, the thicknesses T2and T4of all the polarization enhancement layers171aand171bincluded in the polarization enhancement structure170may be identical to each other. For example, the thickness T2of the first polarization enhancement layer171amay be identical to the thickness T4of the second polarization enhancement layer171b. In some embodiments, all of the first spacer layers172aand the second spacer layers172bincluded in the polarization enhancement structure170may have a same composition, and all the polarization enhancement layers171aand171bincluded in the polarization enhancement structure170may have a same composition. However, in other embodiments, the composition of the first spacer layer172amay be different from the composition of the second spacer layer172b, and the composition of the first polarization enhancement layer171amay be different from the composition of the second polarization enhancement layer171b. The tunnel barrier layer140may be crystalline or amorphous. The tunnel barrier layer140may be non-magnetic or magnetic. The tunnel barrier layer140may separate the fixed layer130from the free layer150. The tunnel barrier layer140may include Al2O3, magnesium oxide (MgO), magnesium aluminum oxide (MgAlO), HfO2, ZrO2, zinc peroxide (ZnO2), titanium dioxide (TiO2), or combinations thereof. In some embodiments, the tunnel barrier layer140may include a plurality of layers. For example, the tunnel barrier layer140may have a stack structure of Mg/MgO, MgO/Mg, MgO/MgAlO, MgAlO/MgO, Mg/MaAlO/Mg, MgO/MgAlO/MgO, MgAlO/MgO/MaAlO, or the like. The free layer150may be ferromagnetic. The magnetization direction of the free layer150may be changed into the vertical direction (the Z direction) or the direction opposite to the vertical direction (the −Z direction). The free layer150may have a magnetization direction that is parallel or anti-parallel to the magnetization direction of the fixed layer130. The free layer150may be crystalline. The free layer150may include Co, Fe, CoB, FeB, CoFe, CoFeB, CoO, FeO, CoFeO, or combinations thereof. In some embodiments, the free layer150may include a first free layer151, a second free layer152above the first free layer151, and an insertion layer153between the first free layer151and the second free layer152. Each of the first free layer151and the second free layer152may be ferromagnetic. Each of the first free layer151and the second free layer152may include Co, Fe, CoB, FeB, CoFe, CoFeB, CoO, FeO, CoFeO, or combinations thereof. When each of the first free layer151and the second free layer152includes boron atoms, the insertion layer153may attract the boron atoms such that the boron atoms in the first free layer151and the second free layer152do not escape from the free layer150. Therefore, the insertion layer153may include a material having an affinity to the boron atoms that is higher than an affinity of metal atoms in the first free layer151and the second free layer152to the boron atoms. The insertion layer153may include, for example, Mo, W, Ta, Hf, CoFeMo, Mg, or combinations thereof. A thickness of the insertion layer153may be from about 0 nm to about 1 nm. The perpendicular magnetic anisotropy enhancement layer160may help the magnetization direction of the free layer150be parallel to the vertical direction Z or opposite to the vertical direction Z. The perpendicular magnetic anisotropy enhancement layer160may include a metal oxide, and therefore may be referred to as a metal oxide layer. Metals in the metal oxide may include, for example, Ta, Mg, Hf, Nb, Zr, Al, manganese (Mn), W, Mo, Co, Fe, Ru, or combinations thereof. The perpendicular magnetic anisotropy enhancement layer160may be non-magnetic or magnetic. The perpendicular magnetic anisotropy enhancement layer160may be crystalline or amorphous. The capping layer190may be configured to protect the magnetic tunnel junction100in following processes after the magnetic tunnel junction100is manufactured. The capping layer190may include a metal or a metal nitride. The metal may include Ru and Ta. The metal nitride may include TiN, TaN, AlN, ZrN, NbN, MoN, or combinations thereof. In some embodiments, the capping layer190may include a plurality of layers. For example, the capping layer190may include a first capping layer191, which includes Ru, and a second capping layer192on the first capping layer191and including Ta. The capping layer190may be magnetic or non-magnetic. The capping layer190may be crystalline or amorphous. In some embodiments, the capping layer190may have an HCP structure. FIG.6is a cross-sectional view of a magnetic tunnel junction100aincluded in the magnetic memory device10(seeFIG.1) according to some embodiments of the inventive concepts. Hereinafter, differences between the magnetic tunnel junction100shown inFIG.5and the magnetic tunnel junction100ashown inFIG.6will be described. Referring toFIG.6, a thickness T2aof the first polarization enhancement layer171amay be different from a thickness T4aof the second polarization enhancement layer171b. For example, the thickness T2aof the first polarization enhancement layer171amay be less than the thickness T4aof the second polarization enhancement layer171b. In addition, a thickness T1aof the first spacer layer172amay be different from a thickness T3of the second spacer layer172b. For example, the thickness T1aof the first spacer layer172amay be less than the thickness T3aof the second spacer layer172b. As the second polarization enhancement layer171bis closer to the tunnel barrier layer140than the first polarization enhancement layer171ais, the second polarization enhancement layer171bmay have a greater influence on polarization of tunneling electrons. Accordingly, the polarization performance of the second polarization enhancement layer171bmay be improved by forming the second polarization enhancement layer171bin the thickness T4athat is greater than the thickness T2aof the first polarization enhancement layer171a. However, as the second polarization enhancement layer171bhas a greater thickness than that of the first polarization enhancement layer171a, the perpendicular magnetic anisotropy of the second polarization enhancement layer171bmay decrease. FIG.7is a block diagram of an electronic device1000according to an embodiment of the inventive concept. Referring toFIG.7, the electronic device1000may include a memory system1400. The memory system1400may include a memory device1410and a memory controller1420. The memory controller1420may control the memory device1410to read data stored in the memory device1410or write the data to the memory device1410in response to a read/write request from a host1430. The memory controller1420may construct an address mapping table for an address provided from the host1430(e.g., a mobile device or a computer system) to a physical address of the memory device1410. The memory device1410may include the magnetic memory device10described with reference toFIGS.1through4, which includes the magnetic tunnel junctions100and100adescribed with reference toFIGS.5and6. In some embodiments, the electronic device may include a notebook, a computer, a tablet, a mobile phone, a wearable electronic device, or an Internet of Things (IoT) electronic product. While the inventive concept has been particularly shown and described with reference to embodiments thereof, it will be understood that various changes in form and details may be made therein without departing from the spirit and scope of the following claims. | 36,710 |
11944015 | DETAILED DESCRIPTION The following detailed description is merely illustrative in nature and is not intended to limit the embodiments of the subject matter or the application and uses of such embodiments. Any implementation described herein as exemplary is not necessarily to be construed as preferred or advantageous over other implementations. For simplicity and clarity of illustration, the figures depict the general structure and/or manner of construction of the various embodiments. Descriptions and details of well-known features and techniques may be omitted to avoid unnecessarily obscuring other features. Elements in the figures are not necessarily drawn to scale: the dimensions of some features may be exaggerated relative to other elements to assist improve understanding of the example embodiments. The terms “comprise,” “include,” “have” and any variations thereof are used synonymously to denote non-exclusive inclusion. The term “exemplary” is used in the sense of “example,” rather than “ideal.” In the interest of conciseness, conventional techniques, structures, and principles known by those skilled in the art may not be described herein, including, for example, the operation of standard magnetic random access memory (MRAM) and the processing techniques used to manufacture of magnetoresistive devices. During the course of this description, like numbers may be used to identify like elements according to the different figures that illustrate the various exemplary embodiments. For the sake of brevity, conventional techniques related to reading and writing memory, and other functional aspects of certain systems and subsystems (and the individual operating components thereof) may not be described in detail herein. Furthermore, the connecting lines shown in the various figures contained herein are intended to represent exemplary functional relationships and/or physical couplings between the various elements. It should be noted that many alternative or additional functional relationships or physical connections may be present in an embodiment of the subject matter. Embodiments described herein utilize what is often referred to as spin-orbit torque (SOT) current to switch or aid in switching the magnetic state of the free layer in a magnetoresistive device that includes at least one magnetic tunnel junction (MTJ), where such a magnetoresistive device is often included in a memory cell in a magnetic memory. Current through a conductor adjacent to the free layer results in a spin torque acting on the free layer due to the injection of a spin current into the free layer from spin-dependent scattering of electrons in the conductor. Such a conductor can be referred to as a spin-orbit torque (SOT) segment, and is typically placed on a portion or the entirety of the sidewall of the free layer. The spin current is injected into the free layer in a direction perpendicular to the boundary where the free layer and the conductor meet. The direction of the torque applied by the SOT segment can depend on whether the SOT segment includes positive or negative SOT materials. For example, for current flowing in a first direction through a conductor, positive SOT materials generate spin current in one direction while negative SOT materials generate spin current in the opposite direction (180 degrees away). For current flowing in an opposite, second direction the spin currents generated by the positive and negative SOT materials will be reversed. The spin torque applied to the free layer by the spin current impacts the magnetic state of the free layer in a similar manner as spin-polarized tunneling current that flows through the MTJ in conventional spin-torque magnetic tunnel junctions. The spin-orbit torque (SOT) supplied by spin current can be used to assist in changing the magnetic state of the free layer, where the SOT causes the magnetization of the free layer to be tilted off of its easy-axis, thereby making the magnetic state more susceptible to change in response to the application of spin-transfer torque (STT) from current that flows through the free layer. For example, in a perpendicular magnetoresistive device in which the easy-axis for the free layer is in a vertical direction that is perpendicular to the film plane in which the layers forming the MTJ are formed, the magnetic state of the free layer either points upward or downward in the steady state with no magnetic field applied. The SOT resulting from SOT current flowing vertically through the SOT segment is horizontal in direction and can cause the magnetic state of the free layer to tilt away from its vertical alignment, thereby rendering it more susceptible to switching in response to STT induced by additional STT current that flows through the free layer itself. In some embodiments, the combination of SOT and STT results in more efficient switching of the free layer, thereby reducing the amount of current needed to write data to the magnetoresistive devices. In some embodiments, when using the SOT current in switching the free layer for a write or reset operations, the amount of write current that flows through the tunnel barrier can be reduced, thereby reducing tunnel junction breakdown probabilities and promoting long-term functionality of memory devices. As with write currents in conventional spin-torque memoires, when using SOT current, the direction of the torque applied by the spin current is dependent on the direction of the current flow in the conductor that is sourcing the SOT current. In other words, the direction of the current flow through the conductor adjacent to the free layer determines the direction of the torque that is applied to the free layer. In many embodiments described herein, the SOT is used as an assist in switching the free layer, and therefore, the directionality of the SOT is less important as it is only being used to “loosen” the magnetization of the free layer and render the magnetization of the free layer easier to switch. Reading of the data stored by the MTJ in the magnetoresistive device is accomplished as in a typical spin-torque MTJ memory cell. For example, a read current, which has a lesser magnitude than that of a write current required to switch the free layer, is applied to the MTJ to sense the resistance of the magnetic tunnel junction. In some embodiments, the resistance sensed based on the read current can be compared with a reference resistance to determine the state of the free layer. In other embodiments, a self-referenced read operation is performed where the resistance through the MTJ is sensed, then the MTJ is written (or reset) so that the free layer is in a known state, and then the resistance is sensed again and compared with the resistance originally sensed. The original state of the free layer can then be determined based on whether the resistance has changed based on the write (reset) operation. FIG.1illustrates a magnetoresistive device100that includes a magnetic tunnel junction. In some embodiments, the magnetoresistive devices shown in theFIGS.1-14are included in magnetic memory cells that can be used in embedded or standalone MRAM applications where high data retention and low switching current are beneficial. The magnetoresistive device100and similar devices depicted in theFIGS.3-14includes an MTJ formed with a magnetoresistive stack that includes a plurality of layers. Each layer of the plurality of layers included in the magnetoresistive stack is formed, deposited, grown, sputtered, or otherwise provided. The layers may be deposited using any technique now known or later developed. In an example embodiment, the plurality of layers includes a number of different layers of both magnetic and nonmagnetic material. For example, the layers may include multiple layers of magnetic material, dielectric layers that provide one or more tunnel barriers or diffusion barriers, coupling layers between layers of magnetic material that provide for ferromagnetic or antiferromagnetic coupling, antiferromagnetic material, and other layers utilized in magnetoresistive stacks as currently known or later developed. In the magnetoresistive devices ofFIGS.1-14, including magnetoresistive device100depicted inFIG.1, the orientation of the layers are illustrated with respect to an underlying substrate upon which the layers are formed. For example, inFIG.1, the free layer120is further from the underlying substrate than the dielectric layer130and the reference layer140. Therefore, the free layer120is “over” the layers130and140, whereas the layers140and130are “under” the free layer120. Moreover, the layers120,130, and140are vertically positioned with respect to the underlying substrate. One of ordinary skill in the art appreciates that the vertical positioning of the layers is generally associated with the processing operations used to form the devices. In the magnetoresistive device ofFIG.1, a dielectric layer130forms a tunnel junction between a reference layer140and a free layer120. The reference layer140, which is shown to include ferromagnetic layers142and144that are antiferromagnetically coupled by coupling layer143, has a predetermined magnetic state. The predetermined magnetic state of the reference layer140is indicated by the arrows within the reference layer140and is perpendicular to the plane in which the various layers are deposited. Thus, the reference layer140has stable magnetic states with magnetization direction perpendicular to the film plane. While the reference layer140is illustrated to include a set of layers forming a synthetic antiferromagnetic structure or synthetic antiferromagnet (SAF), in other embodiments, it may include a set of layers forming a synthetic ferromagnetic structure (SyF). In yet other embodiments, the reference layer140is a single layer of material, where, in some embodiments the material is an alloy or composite material. Reference layer140may achieve its fixed magnetization in a number of different ways. For example, the reference layer can include antiferromagnetic material such as a platinum manganese alloy (Pt—Mn), a nickel manganese alloy (Ni—Mn), or an iridium manganese alloy (Ir—Mn), where such materials have a fixed magnetic state that can be used to influence other magnetic layers within the reference layer140. For example, the reference layer140can include a SAF having antiferromagnetic material that is used to pin other ferromagnetic layers within the SAF such that the reference layer140is held in a predetermined magnetic state by the antiferromagnetic material. In other embodiments, the reference layer140includes an unpinned SAF having a magnetization that is typically fixed during manufacturing operations, but does not rely upon antiferromagnetic material. In yet other embodiments, the fixed magnetization of the reference layer140is achieved through other means, including the manner in which the reference layer140is formed (e.g. shape anisotropy). While the free layer120shown inFIG.1is illustrated as a single layer of material, in other embodiments the free layer120includes two or more ferromagnetic layers separated by one or more coupling layers. Ferromagnetic layers included in embodiments described herein may include a variety of materials, including, for example, cobalt (Co), iron (Fe), and nickel (Ni) as well as alloys such as NiFe, CoFeB, CoNi, FeB CoB, CoFeB—X (where X can be Mo, W, and the like). The particular materials included in the ferromagnetic layers as well as the coupling layers can be selected in order to vary the characteristics of the magnetoresistive devices. In some embodiments one or more of the ferromagnetic layers includes multiple ferromagnetic materials that may or may not alloy together. While not shown inFIG.1, each magnetoresistive device can also include additional dielectric layers forming diffusion barriers or additional tunnel junctions. The magnetoresistive devices can also include spacer layers, which, when included in the stack, can increase the anisotropy of magnetic layers. In some embodiments, the dielectric layers (e.g. dielectric layer130) included in the magnetoresistive stacks of the devices include, for example, one or more layers of aluminum oxide and/or magnesium oxide (MgO). While an exemplary stack structure is used to illustrate the concepts of the present disclosure, it should be appreciated that a multitude of variations of the general stack structure can be used in the various embodiments of the inventions disclosed herein. For example, other embodiments may include multiple SAFs, SyFs, and tunnel barriers in addition to the other layers, where the materials and structures are arranged in various combinations and permutations now known or later developed. InFIG.1a top electrode110is included in the device100, where, in some embodiments, the top electrode110is electrically connected to one of the current-carrying terminals of a selection transistor. The other current-carrying terminal of the selection transistor can be coupled to a common line such as a bit line or a source line that allows voltages to be applied across the MTJ and current to be applied through the MTJ of device100. In other embodiments, the selection transistor is coupled to a bottom electrode for the magnetoresistive device, where such a bottom electrode would typically be below the reference layer140and is not shown inFIG.1. Thus, the top electrode110can be directly coupled to a bit line or source line in some embodiments. The device depicted inFIG.1is a two-terminal device in that connections to the top and bottom allow current for reading and writing to be directed through the device. As shown inFIG.1, an SOT segment121,122is provided on a sidewall of at least a portion of the free layer120. In the embodiment shown inFIG.1, the SOT segment121,122includes two SOT sub-segments121and122that are on opposite sides of the free layer120. The embodiment ofFIG.1also shows the SOT segment121,122extending over the entirety of the height of the free layer120as well as onto the sidewall of the top electrode110. The top view perspective provided inFIG.2corresponds to the device inFIG.1and shows that the SOT sub-segments are on opposite sides of the free stack that includes the free layer120. The geometry of the device100is depicted inFIG.2as having a circular footprint, as such geometries enable high-density perpendicular memory cell arrays. While the SOT segments121,122are depicted as arcs with a certain thickness along the outer surface of the circular footprint of the free layer120, it should be understood that other geometries are suitable for the embodiments described herein. For example, rather than being arc-shaped, the SOT segments could be rectangular. Similarly, while circular geometries for the magnetoresistive stack are depicted in the figures, other shapes can be selected where certain shapes may be advantageous for different applications. In some embodiments in which the free layer120includes multiple magnetic layers that are ferromagnetically or antiferromagnetically coupled, the SOT segment121,122only extends along the sidewall of one of the magnetic layers in the free layer120. However, in other embodiments in which the free layer120includes multiple magnetic layers that are ferromagnetically or antiferromagnetically coupled, the SOT segment121,122extends along the sidewall of or portion of the sidewall of all the magnetic layers in the free layer120. In the example depicted inFIG.1, write current102is directed downward through the device100, where a portion of the downward current flows from the top electrode110into the SOT segment121,122and downward through the SOT segment121,122before returning to the stack portion of the device100and continuing down through the dielectric layer130forming the tunnel barrier and the reference layer140. InFIG.2, the Xs shown in the SOT segments121and122represent current moving away from the viewer, thereby corresponding to current flowing from top to bottom in the magnetoresistive stack. Current in the SOT segments, like current that flows through the free layer120, can flow either upward or downward. Write current generation circuitry, which is not shown inFIG.1, applies a bias voltage across the device100to generate current through the device100for writing, where the direction of the write current determines whether the magnetization of the free layer is forced to a first state or a second state. In one example, the first state corresponds to the magnetization of the free layer pointing upward (e.g. as depicted inFIG.1), which, based on the magnetic layer142of the reference layer140having a magnetization pointing upward, is a lower-resistance (parallel) state than if the magnetization of the free layer120is pointing downward (anti-parallel). It should be noted that the magnetization of the SAF140shown inFIG.1could be reversed such that magnetic layer142has a downward magnetization and magnetic layer144has an upward magnetization. In some embodiments, the write current generation circuitry includes drivers that can included N-follower and/or P-follower circuits that are calibrated to apply the appropriate voltages on the first and second terminals of the device100to produce the desired current through the device100. In other embodiments, the write current generation circuitry can include current sources that apply the desired currents. When the write current generation circuitry applies write current102through the device100, the current splits such that a portion of the current flows through the SOT segment121,122and a portion of the current flows through the free layer120itself. The electrical current in the SOT segment121,122causes a spin current to enter the free layer120, where the spin current is perpendicular to the sidewall of the free layer120and parallel to the film plane. As shown inFIG.1, the SOT resulting from downward directed write current102includes SOT vectors123and124which are directed outward from the center of the stack. If the embodiment illustrated inFIG.1is assumed to correspond to a SOT segment that includes either a positive or negative SOT material, then it should be understood that switching to the other type of SOT material would invert the SOT vectors123and124to point inward instead of outward. The torque applied by the SOT current causes the initially-upward magnetization of the free layer120to be tipped to the outside in at least a portion the free layer120, thereby allowing the downward STT125applied by the current that flows through the free layer to more easily switch the free layer120from the first state (upward) to the second state (downward). Thus, the spin torque provided by the spin current resulting from the current flow through the SOT segment121,122can be used to assist in switching the magnetic state of the free layer120. The device100pictured inFIG.1is a perpendicular device in that the easy axis of the free layer120, as well as the easy axis of each of the magnetic layers142and144in the reference layer140, is in the vertical direction and perpendicular to the film plane of the device100. In some contexts, perpendicular devices such as that shown inFIG.1are preferable to “in-plane” devices in which the easy axis of the magnetic layers lies in the same plane as the film because the perpendicular devices are more scalable. The dimensions of perpendicular devices are more easily reduced without compromising their magnetic characteristics in comparison with in-plane devices. Note that in an embodiment in which the free layer has an in-plane easy-axis, SOT current can be used to switch the state of the free layer if the SOT segment is configured in a way to apply sufficient SOT to force the free layer magnetization to a desired state. For example, the SOT segment could be limited to one side of the free layer such that downward current applies SOT directed outward towards the segment whereas upward current would apply SOT directed inward away from the segment. The division of the write current102into the current that flows through the SOT segment121,122and the current that flows through the free layer120is based on the relative resistances of those portions of the device as perceived by the current flowing downward through the device. Tuning of the resistances of these portions of the device can be used to either balance or selectively unbalance the current flow through those portions of the device such that the amount of current in the SOT segment121,122is about the same (+/−5%) or different than the amount of current that flows through the free layer120. The current density through the SOT segment121,122determines that amount of torque applied by the SOT current. As such, the determination as to desirable current levels in the SOT segment121,122can be used to determine the total amount of write current needed as well as what percentage of that write current is expected to flow through the SOT segment121,122versus the free layer120. Tuning the resistance of the SOT segment121,122can be accomplished by selecting the material for the SOT segment121,122as well as the thickness of the segment. Similarly, the material and thickness of the free layer can be adjusted in order to tune the resistance of the free layer120. The SOT segment121,122is on the sidewall of the free layer120in order to maximize the impact of the spin current injected into the free layer120by current flowing through the SOT segment121,122. In some embodiments such as that discussed with respect toFIGS.11and12below, there may be intervening material between the SOT segment121,122and the free layer120as long as the intervening material does not negate the desired impact of the spin current generated in the SOT segment121,122or interfere with flow of the spin current between the SOT segment121,122and the free layer120. Such an intervening material may be a metal layer or a dielectric layer that is thin enough to allow tunneling of the spin current from the SOT segment121,122to the free layer120. In order to generate the desired spin orbit torque, the SOT segment121,122can be formed using material that has a strong interaction between its lattice and the spin of the charge carriers (e.g. electrons). Such a material is able to create a significant spin polarization of the scattered electrons. Examples of such as materials, which exhibit a strong Spin Hall Effect, include tantalum (Ta), tungsten (W), and platinum (Pt). The materials can also include different phases of these materials, including, for example, Beta-Ta and Beta-W. Some of these materials are positive SOT materials that result in SOT current in a first direction as a result of a particular current flow, whereas others are negative SOT materials that result in an opposite SOT current for the particular current flow. FIG.3illustrates the magnetoresistive device200, which has the same structure as the device100ofFIG.1. However, inFIG.3, the applied write current202is directed upward instead of downward like the current102inFIG.1. The upward write current202is reflected inFIG.4, which provides a top view of the device200ofFIG.3and indicates the upward directed current202with dots (current coming out of the page) instead of Xs (current going into the page as inFIG.2). In the embodiment depicted inFIG.3, the upward write current202splits into two portions—one of which flows through the SOT segment121,122and the other of which flows through the free layer120. The current through the SOT segment121,122results in SOT current that has an inward directed torque depicted by arrows223and224inFIGS.3and4. As was the case with the outward directed torque inFIGS.1and2, the torque applied by the SOT current inFIG.3tips the magnetization of the free layer102off of its easy axis, thereby making it easier to switch using STT current that flows through the free layer120. In the example ofFIG.3, the inward directed torque223,224of the SOT current combined with the upward directed torque225of the STT current can be used to switch the magnetization of the free layer220from the downward directed state to the upward directed state. Thus, write current in one direction forces the magnetic state of the free layer into the first state, whereas write current in a second direction forces the free layer into the second state. FIGS.5and6illustrate an embodiment in which the SOT segment321is only positioned on one side of the magnetoresistive device300. Such an embodiment may be appropriate for smaller (20 nm or less) devices in which the free layer320switches all at once. This is in contrast to larger devices that may include different portions that switch at different times, which may be referred to as “multi-domain switching.” The device300is shown to include a reference layer340, which, as discussed above can be a SAF or other multi-layer structure. The dielectric layer330is between the reference layer340and the free layer320, which lies under the top electrode310. The downward directed write current302results in STT325directed downward as well as SOT323directed outward on the side of the free layer320adjacent to the SOT segment321. FIGS.7and8illustrate an embodiment in which the SOT segment has been divided into a plurality of sub-segments, including sub-segments421,422,426, and428. The sub-segments shown are not evenly spaced around the circumference of the stack structure (as can be seen inFIG.6), but in other embodiments, such equal spacing may be employed. The number of sub-segments can be selected based on the particular application or to complement the structure of the free layer420or the overall device400. While the embodiments presented herein are primarily focused on two-terminal devices, individual or group control of the sub-segments421,422,426, and428is also contemplated, where current through one or more of the sub-segments can be controlled separate from the control of current flow through the MTJ of the device400. While such additional control adds complexity, it may be appropriate in some applications where the tradeoffs warrant such additional control. In the embodiment ofFIGS.7and8the SOT current generated by the SOT sub-segments, including sub-segments421,422,426, and428, is directed inward (shown by arrows423,424,427, and429) and can provide an assist in switching the free layer420included in the device400. The device400is shown to include a reference layer440, which, as discussed above can be a SAF or other multi-layer structure. The dielectric layer430is between the reference layer440and the free layer420, and the upward directed write current402results in STT425directed upward as well as SOT423,424,427, and429directed inward from the sidewalls of the free layer420adjacent to the SOT sub-segments. The magnetoresistive device400also includes a second dielectric layer432between the free layer420and the top electrode410. The second dielectric layer432, which may be of the same or different composition than the first dielectric layer420, can help to improve the perpendicular magnetic anisotropy (PMA) of the free layer. In some MTJ stacks, the PMA of the free layer is enhanced by placing layers of material, such as MgO or other material, at the top and bottom surfaces of the free layer. Such increased PMA can help to make the free layer strongly perpendicular such that the magnetic state of the free layer is stable enough to resist moderate applied magnetic fields and elevated temperatures. Higher PMA can in data retention as the free layer is able to hold its magnetic state for extended periods of time. In some embodiments, the second dielectric layer432is referred to as a second tunnel barrier, even though it may not function in the same manner as the first dielectric layer420that acts as a tunnel barrier for the MTJ in the device400. The second dielectric layer432can also be referred to as a “spacer” layer. The second dielectric layer can help improve the effectiveness of STT current flowing through the device as reflected spin current may provide weaker torque, and having a dielectric layer on both sides of the free layer420avoids the reliance on such weaker reflected spin current for the STT portion of the switching. As shown inFIG.7, the SOT segment, including sub-segments421and422extend along the sidewalls of the device from the top electrode410across the second dielectric layer432and through the free layer420, thereby shorting out the second dielectric layer432. Therefore in order to ensure that current flows through the second dielectric layer432and the free layer420directly, the resistance of those layers is considered along with the resistance of the SOT segment. Tuning of those resistances can be used to determine the appropriate amount of current flow through each of those respective portions of the device400. In the example illustrated inFIGS.7and8, the upward-directed write current402results in inward SOT423,424,427, and429as well as upward-directed STT425. The combination of the torques can be used to switch the magnetization of the free layer420from the downward state shown to the upward pointing state. The SOT induced by the current flowing through the SOT segment assists in the switching by moving the magnetization of the free layer420away from its equilibrium state, thereby “loosening” the magnetization and making it easier for the STT current to switch the magnetization of the free layer420. In the embodiment illustrated inFIGS.9and10, a second reference layer542is included in the magnetoresistive device500. As such, the magnetoresistive device500includes a top electrode510, a second reference layer542, a second dielectric layer532, a free layer520, a first dielectric layer530, and a first reference layer540. Each of the reference layers540and542can include SAFs or other combinations of magnetic and nonmagnetic layers as discussed above. In some examples, the device500depicted inFIGS.9and10can be referred to as a “dual spin filter” and can be considered to include two MTJs. In the embodiment ofFIGS.9and10, the SOT segment521,522is shown to only be positioned along the sidewalls of the free layer520, thereby avoiding shorting out either of the dielectric layers530and532. Note that in other embodiments, one or both of the SOT sub-segments521and522can extend across one or both of the dielectric layers530and532. The upward-directed write current502results in current flowing through the SOT segments521,522, which results in SOT current producing inward directed torque represented by arrows523and524. The write current502also results in current flowing through the free layer520, which results in torque525produced by the STT current. While the various embodiments depicted inFIGS.1-10show the top electrode and a reference layer under the free layer, the vertical orientation of each of those embodiments can be reversed such that the free layer is below the dielectric layer forming the tunnel barrier and the reference layer is above the tunnel barrier. Similarly, it should be understood that the various permutations of multiple SOT sub-segments, the inclusion of additional dielectric layers or reference layers, or the other variations in the embodiments depicted and described can be applied in various combinations in accordance with different embodiments disclosed herein. Similarly, while the SOT segment is depicted as covering the entirety of the side surface or sidewall of the free layer, in other embodiments the SOT segment only covers a portion of the side surface of the free layer. Covering more of the side surface allows for more efficient injection of spin current into the free layer by the SOT segment. In some embodiments, the SOT segment can cover a portion of the side surface of the dielectric layer as long as it does not short out or otherwise adversely impact the tunnel barrier formed by the dielectric layer or interfere with the operation of the device. The SOT segment is also depicted as relatively narrow in relation to the width of the device. The current density within the SOT segment determines the amount of spin current generated in the free layer. As such, different SOT segment geometries can be used to optimize the strip line performance, including the line resistance per length, the required voltage bias to drive the current, and the total current through the line to achieve the highest current density. Such SOT segment optimization can be used to maximize the amount of spin torque applied to the free layer by the current in the SOT segment given the practical constraints of the supporting circuitry and the array architecture. FIGS.11and12illustrate another embodiment in which the SOT segment621,622is shown to extend all along the sidewalls of the device600between the top electrode610and a bottom electrode611. The device600is shown to include multiple reference layers640and642, which may be SAFs, multiple dielectric layers630and632, and free layer620. The upward directed write current602is split between current flowing through the SOT segment621,622and current flowing through the reference, free, and dielectric layers. In the embodiment depicted inFIGS.11and12, the SOT segment621,622is separated from the magnetoresistive stack by a thin layer671that insulates the stack from the SOT segment in terms of direct current flow, but allows the SOT generated within the SOT segment to still impact the free layer such that it can aid in switching. Thus in some embodiments, the layer671is an electrically insulating layer that still allows for SOT to be applied to the free layer620in response to current flow through the SOT segment621,622. For the upward-directed write current602depicted inFIGS.11and12, the SOT is represented by the inward pointing arrows623and624shown inFIG.12. FIGS.13and14illustrate another embodiment in which the SOT segment721extends along the entirety of the sidewall of the stack between the top electrode710and the bottom electrode721. Moreover, the SOT segment721also extends completely around the stack and forms a ring. The device700is shown to include two dielectric layers771and730, reference layer740, and free layer720. Upward-directed write current702results in the SOT from the current in the SOT segment721being directed inward, as shown by the arrows inFIG.14, including arrow723. In the example embodiment shown inFIGS.13and14, the SOT segment is not insulated from the stack and therefore shorts out the various layers in the stack. In order to read the data stored based on the orientation of the free layer, the resistance of the various layers can be tuned in order to ensure that adequate magnetoresistance is discernable by read current flowing through the device700. The full-ring SOT segment may be particularly suited to larger footprint devices such as those that are greater than 20 nm and, in other embodiments, 30 nm or larger. The full-ring SOT segment may be beneficial in switching larger magnetoresistive device sizes because such larger devices may rely on domain mediated switching. The inward directed SOT shown inFIG.14would result in a depression in the magnetization of the free layer720around the outside edge that, along with the STT resulting from current flowing through the free layer720, can force the free layer720to change state. While such an embodiment may not be the most efficient for all applications, a person of ordinary skill in the art recognizes that there are various tradeoffs that can be considered in choosing the particular implementation of a magnetoresistive device that includes an SOT segment, FIG.15illustrates a magnetic memory apparatus that includes a memory cell811. Memory cell811includes a magnetoresistive device821that includes a magnetic tunnel junction such as those discussed above with respect toFIGS.1-14. The magnetoresistive device821, which is a two-terminal device, is coupled in series with selection transistor831. The magnetoresistive device821has a first terminal corresponding to node813and a second terminal corresponding to node814. The first end of the selection transistor831is coupled to the second terminal of the magnetoresistive device821at node814. The second end of the selection transistor831is coupled to node812. In some embodiments, nodes812and813are common lines such as a source line and a bit line, where such common lines are typically coupled to a large number of memory cells. Select circuits841and842, which are controlled by inputs846and847, respectively, enable drivers851and852to be selectively coupled to different bit lines and source lines as appropriate for the operation to be performed. Drivers851and852can be enabled by inputs856and857. In order to select the memory cell811from a plurality of memory cells coupled to the bit line813and the source line812, word line815is asserted high such that selection transistor831allows current to be conducted through the series circuit formed by the selection transistor831and the magnetoresistive device821. Selection transistor831is typically a thin oxide transistor, which, if subjected to a relatively high gate-to-source (Vgs) voltage, can breakdown and fail to operate properly. Control circuitry880is coupled to the word line driver860and the other circuit elements shown inFIG.15, where the control circuitry880is configured to provide the appropriate control signals to the various circuit blocks in order to cause the desired voltages to be applied and currents to flow through the magnetoresistive device821. Control circuitry880may include, for example, a state machine, processor, microcontroller, or logic circuitry. Control circuitry880is used to select the appropriate word line voltage815to be applied by the word line driver860. Control circuitry880can also enable drivers851and852via inputs856and857in order to cause those drivers851and852to drive desired voltages corresponding to read and write operations for the memory cell811. For example, the drivers851and852can be used to generate write current through the magnetoresistive device821, where the direction of the write current generated determines the data stored in the memory cell811. Similarly, control circuitry880can enable select circuits841and842using inputs846and847in order to cause those select blocks to couple the drivers851and852to the appropriate bit lines and source lines. As disclosed herein, SOT segments are provided along the sides of free layers in magnetoresistive devices that include MTJs. Such SOT segments provide spin current to the free layers such that spin-orbit torque is applied to the free layers in a manner that can alter the magnetic state of the free layers. In some embodiments, the SOT current provides an assist to spin-torque generated by current flowing vertically through the magnetic tunnel junction. Some embodiments have SOT segments that include multiple sub-segments. Other embodiments vary in terms of the various layers included in the stack of the magnetoresistive device as well as the geometry and composition of the layers. Although the described exemplary embodiments disclosed herein are directed to various magnetoresistive-based devices, the present disclosure is not necessarily limited to the exemplary embodiments. Thus, the particular embodiments disclosed above are illustrative only and should not be taken as limitations, as the embodiments may be modified and practiced in different but equivalent manners apparent to those skilled in the art having the benefit of the teachings herein. Accordingly, the foregoing description is not intended to limit the disclosure to the particular form set forth, but on the contrary, is intended to cover such alternatives, modifications and equivalents as may be included within the spirit and scope of the inventions as defined by the appended claims so that those skilled in the art should understand that they can make various changes, substitutions and alterations without departing from the spirit and scope of the inventions in their broadest form. | 40,188 |
11944016 | It should be noted that all the figures are diagrammatic. Relative dimensions and proportions of parts of the drawings have been shown exaggerated or reduced in size, for the sake of clarity and convenience in the drawings. The same reference signs are generally used to refer to corresponding or similar features in modified and different embodiments. DETAILED DESCRIPTION In the following detailed description of the invention, reference is made to the accompanying drawings, which form a part hereof, and in which is shown, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized and structural, logical and electrical changes may be made without departing from the scope of the present invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims, along with the full scope of equivalents to which such claims are entitled. Before describing the preferred embodiment, the following description will be given for specific terms used throughout the specification. The term “etch” or “etching” is used herein to generally describe a fabrication process of patterning a material, such that at least a portion of the material remains after the etch is completed. It should be understood that the process of etching silicon involves the steps of patterning a photoresist layer above the silicon, and then removing the areas of silicon no longer protected by the photoresist layer. As such, the areas of silicon protected by the photoresist layer would remain behind after the etch process is complete. However, in another example, etching may also refer to a process that does not use a photoresist layer, but still leaves behind at least a portion of the material after the etch process is complete. Since the photoresist layer is always removed after etch processes in general case, it will not be specifically shown in the drawing of specification unless it is necessary. The memory cell of conventional magnetoresistive random access memory is electrically coupled to vertically adjacent interconnection (ex. metal line or metal bulk) through interconnections such as vias or metal bulk. However, the misalignment issue of conductive plug caused by process limits would impact resistance of interconnections and may further cause short circuit between adjacent interconnections. In order to solve this problem, the present invention provides a magnetoresistive random access memory with larger alignment window and method of manufacturing the same.FIGS.1-5illustrate the process flow of manufacturing this kind of magnetic memory device according to one preferred embodiment of the present invention. Please refer toFIG.1. A substrate100such as an interlayer dielectric (ILD) or an inter-metal dielectric (IMD) is first provided. The material of substrate100may be low-k material such as undoped silicate glass or silicon oxide. An underlying metal layer102such as a metal line made of copper or aluminum is formed in the substrate100. In the embodiment of present invention, the underlying metal layer102may be source line between word lines and parallel to each other. Alternatively, the underlying metal layer102may be bit lines corresponding to respective bit cells and extend in parallel to each other and intersect laterally with word line. In other embodiment, the underlying metal layer102may be polysilicon gate or metal gate instead of metal lines, depending on the level of magnetic memory cell. A capping layer104(may also be referred as a dielectric protection layer) is formed on the substrate100and the underlying metal layer102with the material of silicon carbide nitride (SiCN) and silicon nitride (SiN). The capping layer104may function as an etch stop layer in later process. Please refer again toFIG.1. A dielectric layer106such as another inter-metal dielectric is formed on the capping layer104with the same material as the one of underlying substrate, such as low-k material or undoped silicate glass or silicon oxide. Contact holes107are preformed in the dielectric layer106by conventional photolithographic and etch process, in which no further explanation will be provided hereinafter. Contact hole107extends from the surface of dielectric layer106to the underlying metal layer102through the capping layer104, with a sidewall slightly tapering from the top down. Please note that the contact hole107is formed particularly with a larger opening in the embodiment of present invention. As shown inFIG.1, the contact hole is provided with outwardly-protruding portions108aat top edge. The contact hole107is then filled up with conductive metal such as copper or tungsten and then further undergoes a chemical mechanical polishing process to form a conductive plug108as the one shown in the figure. The layer structure such as barrier layer (not shown) may be formed around the conductive plug108with the material of titanium, titanium nitride or tantalum, etc. In the embodiment of present invention, the shaped conductive plug108is provided with the protruding portion108aextending outwardly from one side of the top edge, so that it will have larger exposed surface than the one of conventional plug and provides larger alignment window in later process. The profile of above-identified contact hole107with protruding portion108amay be formed by any adequate method in prior art, for example, by several etch processes or by using masks to block specific portions in etch process. Since the method of forming this contact hole is not the key point of present invention. No more detail will be provided hereinafter. Please refer toFIG.2. After the conductive plug108is formed in the dielectric layer106, a bottom electrode material layer112, a magnetic tunnel junction (MTJ)114and a top electrode material layer116are sequentially formed on the dielectric layer106and conductive plug108from the bottom up. The stack of these three material layers constitutes the magnetic memory cell110of present invention. The bottom electrode material layer112directly contact the conductive plug108below, with the material of titanium, titanium nitride, tantalum, tantalum nitride, or the combination thereof. The magnetic tunnel junction114is on the bottom electrode material layer112, which may include multilayer structure like a reference layer, a barrier layer and a free layer. In the embodiment of present invention, the free layer is provided with variable magnetic polarities representing a unit of data. For example, the variable magnetic polarity switches between a first state and a second state that respectively represent a binary “0” and a binary “1”. The reference layer is magnetically pinned with a fixed magnetic polarity. The barrier layer provides electrical isolation between the free layer and the reference layer, while still allowing electrons to tunnel therethrough under proper conditions. The material of reference layer may include FePt (iron-platinum) or CoFeB (alloy of cobalt, iron and boron), and the material of reference layer may include single or multiple layers of Co (cobalt), Ni (nickel), Ru (ruthenium). Since the MTJ structure of magnetic memory cell is not the key point of present invention. No more detail will be provided in the specification and drawings in case of obscuring the key points of present invention. Top electrode material layer116is on the magnetic tunnel junction114, with same material as the one of the bottom electrode material layer112, such as titanium, titanium nitride, tantalum, tantalum nitride, or the combination thereof. Please refer toFIG.3. After the stack structure of bottom electrode material layer112, magnetic tunnel junction114and top electrode material layer116is formed, a photolithographic and etch process P1is performed to pattern the stack structure into magnetic memory cells110. In actual process, since the alignment accuracy of photomask in this step has reached its current tool limit, it is hardly for the patterned magnetic memory cell110to precisely align with the conductive plug108thereunder. The actual patterned cell is more or less shifted to one side of the plug. This is the issue of insufficient alignment window mentioned in prior art. To address this problem, conventional solution is to increase the area of undermost bottom electrode112in the magnetic memory cell110, so that it may cover entire conductive plug108. However, this approach would significant increase the layout area required for single magnetic memory cell110and conflict with the purpose of increasing memory capacity per unit area in current memory architecture. Refer still toFIG.3. Different from the above-mentioned conventional solution, the present invention increases the available contact area by forming the conductive plug108with protruding portions108aextending horizontally and outwardly at top edge, instead of increasing the area of bottom electrode112of the magnetic memory cell110like the one in prior art. As shown inFIG.3, due to the present of protruding portion108a, the magnetic memory cell110may still completely overlap the underlying conductive plug108in the condition of slight alignment shift, so that the contact resistance of memory cell would not be increased by reduced contact area and would not further cause the decrease of tunneling magnetoresistnace. Please refer again toFIG.3. The advantage of this approach in the present invention is that the resulted magnetic memory cell is self-aligned. This is because the photolithographic and etch process P1defining the memory cells110would overetch the underlying exposed portions, so that depressed region120would be formed around the magnetic memory cell10. In the embodiment of present invention, the conductive plug108is also under the effect of overetch. It can be seen in the figure that the other side of conductive plug108is exposed and etched due to the shift of magnetic memory cell110, thereby forming a notched portion108bon the plug collectively constituting the depressed region120. Through this self-aligned overetch effect, the top portion of conductive plug108not overlapping the magnetic memory cell110will be removed. This result represents that the approach of present invention would not increase the required layout area for single magnetic memory cell. Please refer toFIG.4. After the magnetic memory cell110is formed, a conformal liner layer122is then formed on the magnetic memory cell110and the dielectric layer106and covers entire magnetic memory cell110. The material of liner layer122may be silicon carbide (SiC) or tetraethyl orthosilicate (TEOS), etc. A dielectric layer124is then further deposited on the liner layer122. The dielectric layer124may be another inter-metal dielectric made of ultra low-k material, such as undoped silicate glass, fluorine doped silicon dioxide, carbon-doped silicon dioxide, porous silicon dioxide, or spin-coating polymer dielectric such as polynorbornenes, benzocyclobutene, hydrogen silsesquioxane (HSQ), or methylsilsesquioxane (MSQ), etc. Please refer toFIG.5. After the dielectric layer124is formed, an overlying metal layer126, such as a metal line made of copper or aluminum, is then formed on the magnetic memory cell110in the dielectric layer124. The liner layer122between the overlying metal layer126and the magnetic memory cell110will be removed, so that the overlying metal layer126would electrically connect with the top electrode116of magnetic memory cell110. In other embodiment, the top electrode116may electrically connect with the overlying metal layer126through other conductive plugs. Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims. | 12,136 |
11944017 | DETAILED DESCRIPTION The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly. Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the disclosure are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain errors necessarily resulting from the standard deviation found in the respective testing measurements. Also, as used herein, the terms “substantially,” “approximately,” or “about” generally means within a value or range which can be contemplated by people having ordinary skill in the art. Alternatively, the terms “substantially,” “approximately,” or “about” means within an acceptable standard error of the mean when considered by one of ordinary skill in the art. People having ordinary skill in the art can understand that the acceptable standard error may vary according to different technologies. Other than in the operating/working examples, or unless otherwise expressly specified, all of the numerical ranges, amounts, values and percentages such as those for quantities of materials, durations of times, temperatures, operating conditions, ratios of amounts, and the likes thereof disclosed herein should be understood as modified in all instances by the terms “substantially,” “approximately,” or “about.” Accordingly, unless indicated to the contrary, the numerical parameters set forth in the present disclosure and attached claims are approximations that can vary as desired. At the very least, each numerical parameter should at least be construed in light of the number of reported significant digits and by applying ordinary rounding techniques. Ranges can be expressed herein as from one endpoint to another endpoint or between two endpoints. All ranges disclosed herein are inclusive of the endpoints, unless specified otherwise. A magnetic tunneling junction (MTJ) over a substrate can be formed by patterning a MTJ layer over a substrate, and subsequently performing an etching operation, such as ion beam etching. Conventionally, a critical dimension of a bottom of a conventional MTJ is narrower than a critical dimension of a bottom electrode via under the MTJ layer. However, during the operation of etching the MTJ layer, a material of the bottom electrode via and/or a material of a barrier layer surrounding the bottom electrode via may be sputtered and deposited on a sidewall of the patterned MTJ. The bottom electrode via and/or the barrier layer may include tantalum (Ta) or tantalum derivatives such as tantalum nitride (TaN), whereby device short may be induced by tantalum-containing residues deposited on a sidewall of a patterned MTJ. Specifically, tantalum-containing residues may form a conductive path on a sidewall of a tunnel barrier layer of the patterned MTJ as the electric and magnetic properties of the MTJ may not be effectively controlled by tunneling effect. Tantalum (Ta), tantalum nitride (TaN), or other tantalum derivatives has a relatively higher sticking coefficient over the sidewall of the MTJ, thus it may be difficult to effectively remove such residues by cleaning, etching, or similar operations without substantially affecting the properties of the MTJ or adjacent structures. The present disclosure provides semiconductor structures and the fabrication methods thereof, wherein a critical dimension of a bottom of an MTJ is greater than a critical dimension of a bottom electrode via under the MTJ layer. Thereby the risk of the tantalum-containing material from the bottom electrode via and/or a barrier layer surrounding the bottom electrode via may be lowered. The risk of device short induced by tantalum-containing residue may also be alleviated by replacing the materials of the bottom electrode via, the barrier layer, or a material of the MTJ. In addition, reducing duration of MTJ etching operation may also lower the risk of device short. Referring toFIG.1,FIG.1is a cross section of a magnetic tunneling junction (MTJ)130, in accordance with some embodiments of the present disclosure. The MTJ130may include a first tunnel barrier layer1321, a resistance switching element1302over the first tunnel barrier layer1321, a capping layer1312over the resistance switching element1302, and a top spacer1301over the capping layer1312. Optionally, the MTJ130may further include a seed layer1311below the first tunnel barrier layer1321, and/or a second tunneling barrier1322between the capping layer1312and the resistance switching element1302. In some embodiments, a pinned layer1330is further disposed between the seed layer1311and the first tunnel barrier layer1321. The spin polarization of electrons is determined by the relationship of orientation between the resistance switching element1302and the pinned layer1330, wherein the orientation of the resistance switching element1302and the pinned layer1330can be same or different. The first tunnel barrier layer1321allows electrons to be able to tunnel through the tunnel barrier layer when an adequate bias voltage is applied. In some embodiments, the tunnel barrier layer may include magnesium oxide (MgO), aluminum oxide (Al2O3), aluminum nitride (AlN), aluminum oxynitride (AlON), hafnium oxide (HfO2) or zirconium oxide (ZrO2). A material of the second tunneling barrier1322may be similar to the first tunnel barrier layer1321. In some embodiments, second tunneling barrier1322may improve the control of tunneling effect. However, in some other embodiments, the second tunneling barrier1322may be omitted to reduce the risk of device short due to residues deposited on a sidewall of the second tunneling barrier1322. The capping layer1312may include metal. For example the capping layer1312can be a multi-layer metal, a thin metal-oxide, or a metal-nitride layer. The metal in the capping layer may include tantalum (Ta), tantalum nitride (TaN), or tantalum derivatives. However in some embodiments, in order to further lower the risk of sputtering tantalum-containing residue from the capping layer1312during fabrication, the capping layer1312is free of tantalum. For example, the capping layer1312may include ruthenium (Ru), beryllium (Be), magnesium (Mg), aluminum (Al), titanium (Ti), tungsten (W), germanium (Ge), platinum (Pt), their alloy thereof, or the like. The seed layer1311may ameliorate the forming of the MTJ130by virtue of lattice orientation. The first tunnel barrier layer1321, the pinned layer1330, and the resistance switching element1302may follow the crystal orientation of the seed layer1311. In some embodiments when a resistance switching element1302of MTJ130is preferred to have a (001) crystal orientation for device performance concern, the first tunnel barrier layer1321may possess a (001) surface. For example, if the resistance switching element1302is formed on a first tunnel barrier layer1321having magnesium oxide (MgO), the seed layer1311may include a body-centered cubic (BCC) structure such as nickel (Ni), chromium (Cr), tantalum (Ta), cobalt-iron-boron (CoFeB), cobalt-iron-tantalum (CoFeTa), cobalt-iron-tungsten (CoFeW), cobalt-iron-boron-tungsten (CoFeBW), or an amorphous material such as tantalum nitride (TaN); thence the resistance switching element1302may substantially have a crystal orientation of (001) or similar to (001). However in some embodiments, in order to further lower the risk of sputtering tantalum-containing residue from the seed layer1311during fabrication, the seed layer1311is free of tantalum or tantalum derivatives. In some other embodiments, the seed layer1311can be omitted if the MTJ130can be formed with desired crystal orientation without the aid of the seed layer1311, then a total thickness of the MTJ130may be reduced. Total thickness reduction of the MTJ130may further reduce the ion beam etching duration when patterning to form the MTJ cell, thereby lowering the risk of sputtering residue contamination at the sidewall of MTJ cell. Referring toFIG.2A,FIG.2Ais a cross section of a semiconductor structure200A, in accordance with some embodiments of the present disclosure. The semiconductor structure200A includes a bottom electrode via121a, a barrier layer122a, an oxide layer104, and the MTJ130as described inFIG.1. The semiconductor structure200A may further include an Nthmetal layer102, an Nthmetal line101in the Nthmetal layer102, a top electrode124, a sidewall spacer125, a dielectric layer126, an (N+1)thmetal layer105, and a contact106. Note that hereinafter elements inFIG.2BtoFIG.17Hbeing the same as or similar to aforesaid counterparts inFIG.2Aare denoted by the same reference numerals, as duplicated explanations are omitted. The bottom electrode via121ais above the Nthmetal layer102and being electrically connected to the Nthmetal line101. The barrier layer122aat least laterally surrounds a sidewall of the bottom electrode via121a, as the barrier layer122amay further space between the Nthmetal line101and the bottom electrode via121a. The bottom electrode via121aand the barrier layer122aare laterally surrounded by the oxide layer104, as a top surface S121of the bottom electrode via121ais substantially coplanar with a top surface S104of the oxide layer104. The oxide layer104under the top surface S104is denoted as a first portion104a. The first portion104aof the oxide layer104is surrounded by a second portion104bof the of the oxide layer104, wherein a top surface C104of the second portion104bis lower than the top surface S104of the first portion104a. The top surface C104of the oxide layer104is concaved toward the Nthmetal layer102. The MTJ130is above the bottom electrode via121a, as a bottom surface of the MTJ130contacts with the top surface S121of the bottom electrode via121aand the top surface S104of the oxide layer104. In some embodiments, the top surface S104of the oxide layer104may be coplanar with a top surface of the barrier layer122a. A top surface of the bottom electrode via121ahas a first width w1and a bottom surface of the MTJ130has a second width w2at the bottom greater than the first width w1. The MTJ130may have a shape tapering away from the bottom electrode via121a. The barrier layer122alaterally surrounds the bottom electrode via121a. In addition, the barrier layer122amay further include an interlayer portion122a′ that separate the bottom electrode via121ainto an upper portion121a′ and a lower portion121a″. The upper portion121a′ of the bottom electrode via121atapers away from the MTJ130. The top surface S121of the upper portion121a′ is in contact with a bottom surface of the MTJ130. It is noteworthy that the upper portion121a′ is also laterally surrounded by the barrier layer122a. In some embodiments, the bottom electrode via121amay include titanium nitride (TiN), copper (Cu), cobalt (Co), tungsten (W), or other suitable materials. In such cases, the barrier layer122amay include tantalum, such as tantalum (Ta), tantalum nitride (TaN), tantalum derivatives, or the like. The barrier layer122ahaving tantalum may serve as a diffusion barrier to impede titanium nitride from being diffused into the MTJ130due to elevated temperature, wherein such diffusion may induce thermal degradation. The barrier layer122amay also ameliorate adhesion between the bottom electrode via121aand the oxide layer104. Furthermore, if the titanium nitride is formed to possess a lattice structure with a dominate crystal orientation, which is not ideal for subsequent MTJ130formation (for example, non-(001) orientations), the interlayer portion122a′ of the barrier layer122aincluding tantalum or tantalum nitride could then interrupt the lattice structure with the dominate crystal orientation and provide an amorphous surface for subsequent MTJ130formation. It is noteworthy that the upper portion121a′ may or may not have a material identical to the bottom electrode via121a. A material of the upper portion121a′ may include titanium nitride (TiN), copper (Cu), cobalt (Co), tungsten (W), or other suitable materials. In some embodiments, when the TiN filling the bottom electrode via121ais conducted by chemical vapor deposition (CVD) under conditions that favor the growth of amorphous TiN, the interlayer portion122a′ of the barrier layer122amay be omitted because the lattice structure of such amorphous TiN cast negligible effect to subsequent MTJ130formation. The top electrode124is over a top surface of the MTJ130. The MTJ130and top electrode124are laterally surrounded by a sidewall spacer125, wherein the sidewall spacer125may include silicon nitride (SiN), silicon carbide (SiC), silicon oxynitride (SiON), silicon oxycarbide (SiOC), the combinations thereof, or any suitable materials which can be used as a protection layer. In some embodiments, the sidewall spacer125contacts with the top surface C104of the oxide layer104. The (N+1)thmetal layer105and the contact106is above the top electrode124, wherein the top electrode124is electrically connected to the contact106. The dielectric layer126surrounds the sidewall spacer125, and spaces between the (N+1)thmetal layer105and the oxide layer104. In some embodiments, the Nthmetal layer102and the (N+1)thmetal layer105may include copper (Cu). The semiconductor structure200A (as well as the other semiconductor structures discussed hereinafter) may selectively include an etch stop layer103between the oxide layer104and the Nthmetal layer102, wherein the etch stop layer103can include single layer structure or multi-layer structure. Referring toFIG.2B,FIG.2Bis a cross section of a semiconductor structure200B, in accordance with some embodiments of the present disclosure. The semiconductor structure200B further includes a bottom electrode123between the MTJ130and the top surface S121of the bottom electrode via121a. The bottom electrode123contacts with the upper portion121a′ of the bottom electrode via121aand the top surface S104of the oxide layer104. The top surface S104of the oxide layer104is substantially coplanar with the top surface S121of the bottom electrode via121a, and the first portion104aof the oxide layer104is under the bottom electrode123. A bottom surface of the bottom electrode123has a third width w3greater than the first width w1. In some embodiments, the third width w3may be identical with the second width w2of the bottom surface of the MTJ130. In some embodiments, the bottom electrode123includes titanium nitride (TiN). Referring toFIG.2C,FIG.2Cis a cross section of a semiconductor structure200C, in accordance with some embodiments of the present disclosure. The semiconductor structure200C does not include the upper portion121a′ of the bottom electrode via121a. The interlayer portion122a′ of the barrier layer122acontacts with the bottom surface of the bottom electrode123and the bottom electrode via121a. A top surface S122of the barrier layer122ais substantially coplanar with the top surface S104of the oxide layer104. Referring toFIG.3A,FIG.3Ais a cross section of a semiconductor structure300A, in accordance with some embodiments of the present disclosure. The bottom electrode via121bis above the Nthmetal layer102and being electrically connected to the Nthmetal line101. The barrier layer122bat least laterally surrounds a sidewall of the bottom electrode via121b. The barrier layer122bmay further space between the Nthmetal line101and the bottom electrode via121a. The bottom electrode via121band the barrier layer122bare laterally surrounded by the oxide layer104. In some embodiments, a top surface S121of the bottom electrode via121bis substantially coplanar with a top surface S104of the oxide layer104, wherein the oxide layer104under the top surface S104is denoted as a first portion104a. The first portion104aof the oxide layer104is surrounded by a second portion104bof the of the oxide layer104, wherein a top surface C104of the second portion104bis lower than the top surface S104of the first portion104a. The top surface C104of the oxide layer104is concaved toward the Nthmetal layer102. The MTJ130is above the bottom electrode via121b, as the bottom surface of the MTJ130contacts with the top surface S121of the bottom electrode via121band the top surface S104of the oxide layer104. In some embodiments, the top surface S104of the oxide layer104may be coplanar with a top surface of the barrier layer122b. A top surface of the bottom electrode via121bhas a first width w1and a bottom surface of the MTJ130has a second width w2at the bottom greater than the first width w1. The MTJ130may have a shape tapering away from the bottom electrode via121b. In some embodiments, the bottom electrode via121bmay include tungsten (W). In such cases, the barrier layer122bmay include titanium nitride (TiN), or the like. The barrier layer122ahaving titanium nitride may serve as a diffusion barrier to impede tungsten from outward diffusion. The barrier layer122bmay also ameliorate adhesion between the bottom electrode via121aand the oxide layer104. In some other embodiments, the top surface S121of the bottom electrode via121bmay be lower than the top surface S104of the oxide layer104as the barrier layer122bcovers the top surface S121the top surface S121and contacts with the MTJ130. Referring toFIG.3B,FIG.3Bis a cross section of a semiconductor structure300B, in accordance with some embodiments of the present disclosure. The semiconductor structure300B further includes a bottom electrode123between the MTJ130and the top surface S121of the bottom electrode via121b. The bottom electrode123contacts with the bottom electrode via121band the top surface S104of the oxide layer104. The top surface S104of the oxide layer104is substantially coplanar with the top surface S121of the bottom electrode via121b, and the first portion104aof the oxide layer104is under the bottom electrode123. A bottom surface of the bottom electrode123has a third width w3greater than the first width w1. In some embodiments, the third width w3may be identical with the second width w2of the bottom surface of the MTJ130. In some embodiments, the bottom electrode123includes titanium nitride. In some embodiments, the bottom electrode123is formed by an operation, for example forming a titanium nitride layer by chemical vapor deposition (CVD), which creates an amorphous surface for subsequent MTJ130formation. Referring toFIG.3C,FIG.3Cis a cross section of a semiconductor structure300C, in accordance with some embodiments of the present disclosure. The bottom electrode via121bof the semiconductor structure300C further includes an amorphous cap121b′, which may or may not be composed of Ta or TaN, above a tungsten portion121tof the bottom electrode via121b. In some embodiments, the bottom electrode123between the MTJ130and the bottom electrode via121bis further present in the semiconductor structure300C. In some other embodiments, the bottom electrode123is omitted in the semiconductor structure300C. Referring toFIG.4,FIG.4shows a flow chart representing method for fabricating a semiconductor structure, in accordance with some embodiments of the present disclosure. The method for fabricating a semiconductor structure may include forming an oxide layer (operation1001), forming a first via trench in the oxide layer (operation1002), forming a barrier layer in the first via trench (operation1003), forming a bottom electrode via in the first via trench (operation1004), forming an MTJ layer above the bottom electrode via (operation1005), and patterning the MTJ layer to form an MTJ having a bottom width greater than a top width of the bottom electrode via (operation1006). HereinafterFIG.5toFIG.7are cross sections of the semiconductor structure200A, the semiconductor structure200B, or the semiconductor structure200C during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. Referring toFIG.5,FIG.5is a cross section of a semiconductor structure during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. The Nthmetal layer102and the Nthmetal line101in the Nthmetal layer102are formed. The oxide layer104is formed above the Nthmetal layer102(or above the etch stop layer103if the etch stop layer103is formed). In some embodiments, the oxide layer104may include tetraethoxysilane (TEOS), which can be formed by various deposition techniques. A first via trench120is subsequently formed in the oxide layer104and above the Nthmetal line101. In some embodiments, the etch stop layer103is optionally formed above the Nthmetal layer102prior to forming the oxide layer104, wherein the operation of etching the oxide layer104for forming the first via trench120can be controlled by the etch stop layer103. Referring toFIG.6,FIG.6is a cross section of a semiconductor structure during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. A barrier layer122ais formed above the oxide layer104, above the Nthmetal line101, and conformably on a sidewall of the first via trench120. The barrier layer122amay include tantalum, such as tantalum (Ta), tantalum nitride (TaN), tantalum derivatives, or the like. Referring toFIG.6andFIG.7,FIG.7is a cross section of a semiconductor structure during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. The bottom electrode via121ais formed inside the first via trench120, wherein the bottom electrode via121ais laterally surrounded by the barrier layer122a. In some embodiments, the bottom electrode via121amay include titanium nitride (TiN). In some embodiments, the bottom electrode via121amay be formed by chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), or other suitable operations. HereinafterFIG.8AtoFIG.8CandFIG.9AtoFIG.9Care cross sections of the semiconductor structure200A during intermediate stages of manufacturing operations, andFIG.8AtoFIG.8CandFIG.10AtoFIG.10Eare cross sections of the semiconductor structure200B during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. Referring toFIG.8A,FIG.8Ais a cross section of a semiconductor structure during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. Subsequent to the operations performed inFIG.7, an etch operation, which may include dry etch operation and wet etch operation, are performed to remove a portion of the bottom electrode via121a, thereby a second via trench120′ is formed. Herein a top surface of the etched bottom electrode via121ais lower than a top surface of the barrier layer122a. In some embodiments, the etching agent utilized herein may include halogen gas, such as chlorine gas (C12). Referring toFIG.8B,FIG.8Bis a cross section of a semiconductor structure during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. The interlayer portion122a′ of the barrier layer122ais formed above the top surface of the etched bottom electrode via121a. A layer121a″ having the same material with the bottom electrode via121ais formed above the barrier layer122aand the interlayer portion122a′ of the barrier layer122a. The layer121a″ may or may not have a material identical to the bottom electrode via121a. A material of the layer121a″ may include titanium nitride (TiN), copper (Cu), cobalt (Co), tungsten (W), or other suitable materials. Referring toFIG.8C,FIG.8Cis a cross section of a semiconductor structure during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. A planarization operation (such as chemical mechanical planarization) is subsequently performed from above the layer121a″, as a top surface of the second portion104bof the oxide layer104is exposed. The upper portion121a′ of the bottom electrode via121ais thereby formed. The top surface S121of the bottom electrode via121a(which is identical with the top surface of the upper portion121a′) is substantially coplanar with the top surface of the second portion104bof the oxide layer104. Referring toFIG.1andFIG.9A,FIG.9Ais a cross section of the semiconductor structure200A during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. Subsequent to the operations performed inFIG.8C, an MTJ layer130′ is formed above the oxide layer104and the bottom electrode via121a. As previously discussed, MTJ layer130′ is preferred to be formed on a (001) lattice surface, or a surface similar to (001) lattice plane. The interlayer portion122a′ of the barrier layer122aserving as a lattice interrupter may prevent the MTJ layer130′ from following the lattice orientation of the lower portion121a″ of the bottom electrode via121a, e.g., titanium nitride, which has a non-(001) crystal orientation. Referring toFIG.9B,FIG.9Bis a cross section of the semiconductor structure200A during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. The top electrode124is subsequently formed above the MTJ layer130′, wherein the top electrode124can be used as a photomask. The MTJ layer130′ is patterned by the top electrode124to form the MTJ130, wherein the MTJ130has the second width w2greater than the first width w1of the top surface of the bottom electrode via121a, as the MTJ130may have a shape tapering away from the bottom electrode via121a. The formation of the MTJ layer130may entail etching operation, such as ion beam etching (IBE) operation. The etching operation may remove a predetermined portion of the MTJ layer130′ and recess a portion of the oxide layer104. Thereby the top surface C104of the second portion104bexposed from the top electrode124and/or the remaining MTJ130is lower than the top surface S104of the first portion104a, and the top surface C104of the oxide layer104is concaved toward the Nthmetal layer102. In order to reduce the risk of sputtering tantalum-containing residues from the barrier layer122aduring the etching operation, the bottom width of the MTJ130is set to be wider than the top surface of the bottom electrode via121a, so that the first portion104aof the oxide layer104can surround the barrier layer122. In some embodiments, oxide residues sputtered from the oxide layer104may impact and thereby remove tantalum-containing residues deposited on a sidewall of the MTJ130, further lower the risk of shortage induced by tantalum-containing residues. Similar techniques can be applied to other embodiments in the present disclosure. Furthermore, since the upper portion121a′ of the bottom electrode via121abelow the top surface S104of the first portion104amay serve as a lattice barrier, the time period of the etching operation can be shortened due to total thickness reduction of the MTJ130with regard to omitting a bottom electrode (alternatively stated, a total amount of portions to be removed in the etching operation is reduced), therefore the risk of sputtering tantalum-containing residues from the barrier layer122amay also be lowered. Referring toFIG.9C,FIG.9Cis a cross section of the semiconductor structure200A during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. The sidewall spacer125is subsequently formed on the sidewall of the MTJ130and/or the top electrode124to prevent the MTJ130from being deteriorated by oxidation. The dielectric layer126is formed above the oxide layer104, than the (N+1)thmetal layer105and the contact106is formed above the dielectric layer126, wherein the contact106may be electrically connected to the top electrode124. Referring toFIG.10A,FIG.10Ais a cross section of the semiconductor structure200B during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. Subsequent to operations performed inFIG.8C, a bottom electrode layer123″ having the same material as the bottom electrode via121ais formed above the upper portion121a′ of the bottom electrode via121aand the oxide layer104. Referring toFIG.10AandFIG.10B,FIG.10Bis a cross section of the semiconductor structure200B during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. A planarization operation (such as chemical mechanical planarization operation) is optionally performed from a top surface S123″ of the bottom electrode layer123″, wherein a thickness t1of the bottom electrode layer123″ may be reduced to a thickness t2less than the thickness t1. In some embodiments, the planarized top surface of the bottom electrode layer123″ may provide a finer surface for forming an MTJ layer130′ by virtue of lattice orientation, as will be discussed inFIG.10C. Referring toFIG.10C,FIG.10Cis a cross section of the semiconductor structure200B during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. Subsequently the MTJ layer130′ is formed above the oxide layer104and the bottom electrode via121a. As previously discussed, MTJ layer130′ is preferred to be formed on a (001) lattice surface, or a surface similar to (001) lattice plane. The interlayer portion122a′ serving as a lattice interrupter may prevent the MTJ layer130′ from following the lattice orientation of the lower portion121a″ of the bottom electrode via121a, e.g., titanium nitride, which has a non-(001) crystal orientation. Referring toFIG.10D,FIG.10Dis a cross section of the semiconductor structure200B during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. The top electrode124is subsequently formed above the MTJ layer130′, wherein the top electrode124can be used as a photomask. The MTJ layer130′ and the bottom electrode layer123″ are patterned by the top electrode124to form the MTJ130and the bottom electrode123respectively, wherein the MTJ130has the second width w2greater than the first width w1of the top surface of the bottom electrode via121a, the bottom electrode123has the third width w3greater than the first width w1, as the MTJ130may have a shape tapering away from the bottom electrode via121a. The formation of the MTJ layer130may entail etching operation, such as ion beam etching (IBE) operation. The etching operation may remove a predetermined portion of the MTJ layer130′ and recess a portion of the oxide layer104. Thereby the top surface C104of the second portion104bexposed from the top electrode124and/or the remaining MTJ130is lower than the top surface S104of the first portion104a, and the top surface C104of the oxide layer104is concaved toward the Nthmetal layer102. In some embodiments, the bottom electrode123being wider than the top surface of the bottom electrode via121amay reduce oxide loss from the first portion104aof the oxide layer104. Referring toFIG.10E,FIG.10Eis a cross section of the semiconductor structure200B during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. The sidewall spacer125is subsequently formed on the sidewall of the MTJ130and/or the top electrode124to prevent the MTJ130from being deteriorated by oxidation. The dielectric layer126is formed above the oxide layer104, than the (N+1)thmetal layer105and the contact106is formed above the dielectric layer126, wherein the contact106may be electrically connected to the top electrode124. HereinafterFIG.11AtoFIG.11Fare cross sections of the semiconductor structure200C during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. Referring toFIG.11A,FIG.11Ais a cross section of the semiconductor structure200C during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. Subsequent to operations performed inFIG.7, an etch operation, which may include dry etch operation and wet etch operation, are performed to remove a portion of the bottom electrode via121a, thereby a second via trench120′ is formed. Herein a top surface of the etched bottom electrode via121ais lower than a top surface of the barrier layer122a. In some embodiments, the etching agent utilized herein may include halogen gas, such as chlorine gas (C12). Referring toFIG.11B,FIG.11Bis a cross section of the semiconductor structure200C during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. In some embodiments, a material identical to the barrier layer122ais formed inside the second via trench120′. In some other embodiments, other suitable material different from the barrier layer122acan also be formed inside the second via trench120′. Referring toFIG.11C,FIG.11Cis a cross section of the semiconductor structure200C during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. A planarization operation (such as chemical mechanical planarization) is subsequently performed from above the barrier layer122a. In some embodiments, a top surface of the second portion104bof the oxide layer104is exposed. The top surface S122of the barrier layer122ais substantially coplanar with the top surface of the second portion104bof the oxide layer104. In some other embodiments, a thickness of the barrier layer122ais reduced to be in a range from about 1 nm to about 5 nm, which can reduce the oxide loss during the fabrication operation of MTJ130(the fabrication operation of MTJ130will be discussed inFIG.11E). Herein a portion of the barrier layer122aabove the bottom electrode via121ais denoted as an interlayer portion122a′ of the barrier layer122a. Referring toFIG.11D,FIG.11Dis a cross section of the semiconductor structure200C during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. Subsequently the MTJ layer130′ is formed above the oxide layer104and the bottom electrode via121a. As previously discussed, MTJ layer130′ is preferred to be formed on a (001) lattice surface, or a surface similar to (001) lattice plane. The interlayer portion122a′ of the barrier layer122aserving as a lattice interrupter may prevent the MTJ layer130′ from following the lattice orientation of the bottom electrode via121a, e.g., titanium nitride, which has a non-(001) crystal orientation. Referring toFIG.11E,FIG.11Eis a cross section of the semiconductor structure200C during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. The top electrode124is subsequently formed above the MTJ layer130′, wherein the top electrode124can be used as a photomask. The MTJ layer130′ and the bottom electrode layer123″ are patterned by the top electrode124to form the MTJ130and the bottom electrode123respectively, wherein the MTJ130has the second width w2greater than the first width w1of the top surface of the bottom electrode via121a, as the MTJ130may have a shape tapering away from the bottom electrode via121a. The formation of the MTJ layer130may entail etching operation, such as ion beam etching (IBE) operation. The etching operation may remove a predetermined portion of the MTJ layer130′ and recess a portion of the oxide layer104. Thereby the top surface C104of the second portion104bexposed from the top electrode124and/or the remaining MTJ130is lower than the top surface S104of the first portion104a, and the top surface C104of the oxide layer104is concaved toward the Nthmetal layer102. In some other embodiments, a barrier layer (not shown inFIG.11E) remained above the oxide layer104having a thickness in a range from about 1 nm to about 5 nm may reduce the loss of the oxide layer104during the etching operation. Referring toFIG.11FFIG.11Fis a cross section of the semiconductor structure200C during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. The sidewall spacer125is subsequently formed on the sidewall of the MTJ130and/or the top electrode124to prevent the MTJ130from being deteriorated by oxidation. The dielectric layer126is formed above the oxide layer104, than the (N+1)thmetal layer105and the contact106is formed above the dielectric layer126, wherein the contact106may be electrically connected to the top electrode124. HereinafterFIG.12toFIG.14are cross sections of the semiconductor structure300A, the semiconductor structure300B, or the semiconductor structure300C during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. Referring toFIG.12,FIG.12is a cross section of a semiconductor structure during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. The Nthmetal layer102and the Nthmetal line101in the Nthmetal layer102are formed. The oxide layer104is formed above the Nthmetal layer102(or above the etch stop layer103if the etch stop layer103is formed). In some embodiments, the oxide layer104may include tetraethoxysilane (TEOS), which can be formed by various deposition techniques. A first via trench120is subsequently formed in the oxide layer104and above the Nthmetal line101. In some embodiments, the etch stop layer103is optionally formed above the Nthmetal layer102prior to forming the oxide layer104, wherein the operation of etching the oxide layer104for forming the first via trench120can be controlled by the etch stop layer103. Referring toFIG.13,FIG.13is a cross section of a semiconductor structure during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. A barrier layer122bis formed above the oxide layer104, above the Nthmetal line101, and conformably on a sidewall of the first via trench120. The barrier layer122bmay include titanium nitride (TiN), or the like. The bottom electrode via121bis formed inside the first via trench120, wherein the bottom electrode via121bis laterally surrounded by the barrier layer122b. In some embodiments, the bottom electrode via121bmay include tungsten (W) to prevent diffusion issues therefrom. In some embodiments, the bottom electrode via121bmay be formed by chemical vapor deposition, physical vapor deposition (PVD), atomic layer deposition (ALD), electroplating, or other suitable operations. The barrier layer122bbeing free from tantalum (Ta) may reduce the risk of tantalum-containing residues being sputtered therefrom in subsequently performed etching operation. Referring toFIG.14,FIG.14is a cross section of a semiconductor structure during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. A planarization operation (such as chemical mechanical planarization) is subsequently performed above the barrier layer122band the bottom electrode via121b, as a top surface of the second portion104bof the oxide layer104is exposed. The top surface S121of the bottom electrode via121bis substantially coplanar with the top surface of the second portion104bof the oxide layer104. HereinafterFIG.15AtoFIG.15Care cross sections of the semiconductor structure300A during intermediate stages of manufacturing operations,FIG.16AtoFIG.16Eare cross sections of the semiconductor structure300B during intermediate stages of manufacturing operations, andFIG.17AtoFIG.17Hare cross sections of the semiconductor structure300C during intermediate stages of manufacturing operations in accordance with some embodiments of the present disclosure. Referring toFIG.15A,FIG.15Ais a cross section of the semiconductor structure300A during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. Subsequently the MTJ layer130′ is formed above the oxide layer104and the bottom electrode via121b. As previously discussed, MTJ layer130′ is preferred to be formed on a (001) lattice surface, or a surface similar to (001) lattice plane. Herein the bottom electrode via121bdirectly contacting with a bottom surface of the MTJ layer130′ may prevent the MTJ layer130′ from following the lattice orientation of the bottom electrode via121b, e.g., tungsten. Referring toFIG.15B,FIG.15Bis a cross section of the semiconductor structure300A during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. The top electrode124is subsequently formed above the MTJ layer130′, wherein the top electrode124can be used as a photomask. The MTJ layer130′ and the bottom electrode layer123″ are patterned by the top electrode124to form the MTJ130and the bottom electrode123respectively, wherein the MTJ130has the second width w2greater than the first width w1of the top surface of the bottom electrode via121b, as the MTJ130may have a shape tapering away from the bottom electrode via121b. The formation of the MTJ layer130may entail etching operation, such as ion beam etching (IBE) operation. The etching operation may remove a predetermined portion of the MTJ layer130′ and recess a portion of the oxide layer104. Thereby the top surface C104of the second portion104bexposed from the top electrode124and/or the remaining MTJ130is lower than the top surface S104of the first portion104a, and the top surface C104of the oxide layer104is concaved toward the Nthmetal layer102. Since no bottom electrode is between the MTJ130and the bottom electrode via121b, the time period of the etching operation can be shortened due to total thickness reduction of the MTJ130with regard to omitting a bottom electrode, therefore the risk of sputtering tantalum-containing residues from the barrier layer122amay also be lowered. Referring toFIG.15C,FIG.15Cis a cross section of the semiconductor structure300A during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. The sidewall spacer125is subsequently formed on the sidewall of the MTJ130and/or the top electrode124to prevent the MTJ130from being deteriorated by oxidation. The dielectric layer126is formed above the oxide layer104, than the (N+1)thmetal layer105and the contact106is formed above the dielectric layer126, wherein the contact106may be electrically connected to the top electrode124. Referring toFIG.16A,FIG.16Ais a cross section of the semiconductor structure300B during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. Subsequent to operations performed inFIG.14, a bottom electrode layer123″ having the same material as the barrier layer122bis formed above the bottom electrode via121band the oxide layer104. Referring toFIG.16AandFIG.16B,FIG.16Bis a cross section of the semiconductor structure300B during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. A planarization operation (such as chemical mechanical planarization operation) is optionally performed from a top surface S123″ of the bottom electrode layer123″, wherein a thickness t1of the bottom electrode layer123″ may be reduced to a thickness t2less than the thickness t1. In some embodiments, the planarized top surface of the bottom electrode layer123″ may provide a finer surface for forming an MTJ layer130′ by virtue of lattice orientation, as will be discussed inFIG.16C. Referring toFIG.16C,FIG.16Cis a cross section of the semiconductor structure300B during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. Subsequently the MTJ layer130′ is formed above the oxide layer104and the bottom electrode via121b. As previously discussed, MTJ layer130′ is preferred to be formed on a (001) lattice surface, or a surface similar to (001) lattice plane. Herein the bottom electrode layer123″ directly contacting with a bottom surface of the MTJ layer130′ may prevent the MTJ layer130′ from following the lattice orientation of the bottom electrode via121b, e.g., tungsten. Referring toFIG.16D,FIG.16Dis a cross section of the semiconductor structure300B during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. The top electrode124is subsequently formed above the MTJ layer130′, wherein the top electrode124can be used as a photomask. The MTJ layer130′ and the bottom electrode layer123″ are patterned by the top electrode124to form the MTJ130and the bottom electrode123respectively, wherein the MTJ130has the second width w2greater than the first width w1of the top surface of the bottom electrode via121b, the bottom electrode123has the third width w3greater than the first width w1, as the MTJ130may have a shape tapering away from the bottom electrode via121b. The formation of the MTJ layer130may entail etching operation, such as ion beam etching (IBE) operation. The etching operation may remove a predetermined portion of the MTJ layer130′ and recess a portion of the oxide layer104. Thereby the top surface C104of the second portion104bexposed from the top electrode124and/or the remaining MTJ130is lower than the top surface S104of the first portion104a, and the top surface C104of the oxide layer104is concaved toward the Nthmetal layer102. In some embodiments, the bottom electrode123being wider than the top surface of the bottom electrode via121bmay reduce oxide loss from the first portion104aof the oxide layer104. Referring toFIG.16E,FIG.16Eis a cross section of the semiconductor structure300B during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. The sidewall spacer125is subsequently formed on the sidewall of the MTJ130and/or the top electrode124to prevent the MTJ130from being deteriorated by oxidation. The dielectric layer126is formed above the oxide layer104, than the (N+1)thmetal layer105and the contact106is formed above the dielectric layer126, wherein the contact106may be electrically connected to the top electrode124. Referring toFIG.17A,FIG.17Ais a cross section of the semiconductor structure300C during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. Subsequent to the operations performed inFIG.14, an etch operation, which may include dry etch operation and wet etch operation, are performed to remove a portion of the bottom electrode via121b, thereby a second via trench120′ is formed. In some embodiments, a portion of the barrier layer122bmay also be removed, as the oxide layer104may, or may not be exposed from a sidewall of the second via trench120′. Herein a top surface of the etched bottom electrode via121bis lower than a top surface of the barrier layer122b. Referring toFIG.17B,FIG.17Bis a cross section of the semiconductor structure300C during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. An amorphous layer121b′ is formed above the oxide layer104and a tungsten portion121tof the bottom electrode via121b. In some embodiments, the amorphous layer121b′ can include tantalum derivatives such as tantalum nitride (TaN). Referring toFIG.17C,FIG.17Cis a cross section of the semiconductor structure300C during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. A planarization operation (such as chemical mechanical planarization) is subsequently performed from above the amorphous layer121b″, as a top surface of the second portion104bof the oxide layer104is exposed, and the amorphous cap121b′ is thereby formed. A top surface S121of the bottom electrode via121a(which is identical with the top surface of the amorphous cap121b′) is substantially coplanar with the top surface of the second portion104bof the oxide layer104. Referring toFIG.17D,FIG.17Dis a cross section of the semiconductor structure300C during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. Subsequent to operations performed inFIG.14, a bottom electrode layer123″ having the same material as the barrier layer122bis formed above the amorphous cap121b′ and the oxide layer104. Referring toFIG.17DandFIG.17E,FIG.17Eis a cross section of the semiconductor structure300C during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. A planarization operation (such as chemical mechanical planarization operation) is optionally performed from a top surface S123″ of the bottom electrode layer123″, wherein a thickness t1of the bottom electrode layer123″ may be reduced to a thickness t2less than the thickness t1. In some embodiments, the planarized top surface of the bottom electrode layer123″ may provide a finer surface for forming an MTJ layer130′ by virtue of lattice orientation, as will be discussed inFIG.17F. Referring toFIG.17F,FIG.17Fis a cross section of the semiconductor structure300C during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. Subsequently the MTJ layer130′ is formed above the bottom electrode layer123″. As previously discussed, MTJ layer130′ is preferred to be formed on a (001) lattice surface, or a surface similar to (001) lattice plane. Herein the bottom electrode layer123″ directly contacting with a bottom surface of the MTJ layer130′ may prevent the MTJ layer130′ from following the lattice orientation of the bottom electrode via121b, e.g., tungsten. Referring toFIG.17G,FIG.17Gis a cross section of the semiconductor structure300C during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. The top electrode124is subsequently formed above the MTJ layer130′, wherein the top electrode124can be used as a photomask. The MTJ layer130′ and the bottom electrode layer123″ are patterned by the top electrode124to form the MTJ130and the bottom electrode123respectively, wherein the MTJ130has the second width w2greater than the first width w1of the top surface of the bottom electrode via121b, the bottom electrode123has the third width w3greater than the first width w1, as the MTJ130may have a shape tapering away from the bottom electrode via121b. The formation of the MTJ layer130may entail etching operation, such as ion beam etching (IBE) operation. The etching operation may remove a predetermined portion of the MTJ layer130′ and recess a portion of the oxide layer104. Thereby the top surface C104of the second portion104bexposed from the top electrode124and/or the remaining MTJ130is lower than the top surface S104of the first portion104a, and the top surface C104of the oxide layer104is concaved toward the Nthmetal layer102. In some embodiments, the bottom electrode123being wider than the top surface of the bottom electrode via121bmay reduce oxide loss from the first portion104aof the oxide layer104. In some embodiments, the bottom electrode123being wider than the top surface of the amorphous cap121b′ may reduce the risk of tantalum residues being sputtered therefrom under etching operation. Referring toFIG.17H,FIG.17His a cross section of the semiconductor structure300C during intermediate stages of manufacturing operations, in accordance with some embodiments of the present disclosure. The sidewall spacer125is subsequently formed on the sidewall of the MTJ130and/or the top electrode124to prevent the MTJ130from being deteriorated by oxidation. The dielectric layer126is formed above the oxide layer104, than the (N+1)thmetal layer105and the contact106is formed above the dielectric layer126, wherein the contact106may be electrically connected to the top electrode124. The present disclosure provides semiconductor structures and the fabrication methods thereof, wherein a critical dimension of a bottom width of an MTJ is greater than a top width of a bottom electrode via under the MTJ layer. Thereby the risk of the tantalum-containing material from the bottom electrode via and/or a barrier layer surrounding the bottom electrode via may be lowered. The risk of shortage induced by tantalum-containing residue may also be alleviated by replacing the materials of the bottom electrode via, the barrier layer, or a material of the MTJ while ensuring the formation of the MTJ per se follows a certain lattice orientation with acceptable uniformity. In addition, reducing operation time of MTJ etching operation may also lower the risk of shortage induction, which may be achieved by omitting the bottom electrode and disposing a substitutional layer on the top portion of the bottom electrode via. The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other operations and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present invention, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present invention. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps. Some embodiments of the present disclosure provide a semiconductor structure, including a bottom electrode via, a top surface of the bottom electrode via having a first width, a barrier layer surrounding the bottom electrode via, and a magnetic tunneling junction (MTJ) over the bottom electrode via, a bottom of the MTJ having a second width, the first width being narrower than the second width. Some embodiments of the present disclosure provide a semiconductor structure, including a bottom electrode via, a barrier layer surrounding the bottom electrode via, an oxide layer surrounding the bottom electrode via, a top surface of the oxide layer proximal to the bottom electrode via being coplanar with a top surface of the bottom electrode via, and a magnetic tunneling junction (MTJ) over the bottom electrode via. Some embodiments of the present disclosure provide a method for manufacturing a semiconductor structure, including forming an oxide layer, forming a first via trench in the oxide layer, forming a barrier layer in the first via trench, forming a bottom electrode via in the first via trench, forming a magnetic tunneling junction (MTJ) layer above the bottom electrode via, and patterning the MTJ layer to form an MTJ having a bottom width greater than a top width of the bottom electrode via. | 57,391 |
11944018 | DETAILED DESCRIPTION OF THE INVENTION The present disclosure will be described in detail below with reference to the drawings as appropriate. In the drawings used in the following description, in order to make features of the present disclosure easier to understand, characteristic portions thereof may be shown enlarged for convenience, and dimensional ratios and the like of respective constituent elements may be different from actual ones. Materials, dimensions, and the like illustrated in the following description are examples, and the present disclosure is not limited thereto and may be appropriately modified and implemented within the range not changing the gist thereof. First Embodiment FIG.1is a cross-sectional view of a magnetoresistance effect element according to a first embodiment. First, directions will be defined. A direction in which respective layers are laminated may be referred to as a laminating direction. In addition, a direction that intersects the laminating direction and in which the respective layers extend may be referred to as an in-plane direction.FIG.1is a cross-sectional view of a magnetoresistance effect element101cut in the laminating direction of the respective layers. The magnetoresistance effect element101shown inFIG.1is a laminate in which an underlayer20, a first Ru alloy layer30, a first ferromagnetic layer40, a non-magnetic metal layer50, a second ferromagnetic layer60, and a cap layer80are laminated on a substrate10in order. (Substrate) The substrate10is a portion serving as a base for the magnetoresistance effect element101. The substrate10may be a crystalline substrate or an amorphous substrate. A crystalline substrate is made of, for example, a metal oxide single crystal, a silicon single crystal, a sapphire single crystal, or ceramics. An amorphous substrate is made of, for example, a silicon single crystal with a thermal oxide film, glass, or quartz. When the substrate10is amorphous, the influence of a crystal structure of the substrate10on a crystal structure of the laminate can be reduced. The magnetoresistance effect element101may be used without the substrate10. (Underlayer) The underlayer20is located between the substrate10and the first ferromagnetic layer40. The underlayer20is a laminate having a two-layered structure in which a first underlayer21and a second underlayer22are laminated on the substrate10. The underlayer20may be a single layer or a plurality of layers. The underlayer20may be used as an electrode for passing an electric current for detection. The first underlayer21functions as a seed layer that enhances the crystallinity of an upper layer laminated on the first underlayer21. The first underlayer21may be a layer containing at least one of MgO, TiN, and NiTa alloys. Also, the first underlayer21may be an alloy layer containing Co and Fe. The alloy containing Co and Fe is, for example, Co—Fe or Co—Fe—B. Further, the first underlayer21may be a layer containing at least one of metal elements such as Ag, Au, Cu, Cr, V, Al, W, and Pt, for example. A thickness of the first underlayer21may be, for example, in the range of 2 nm or more and 30 nm or less. The second underlayer22functions as a buffer layer that alleviates the lattice mismatch between the first underlayer21and the first Ru alloy layer30. The second underlayer22may be one that can be used as an electrode for passing the electric current for detection. The second underlayer22may be a layer containing at least one of metal elements such as Ag, Au, Cu, Cr, V, Al, W, and Pt, for example. In addition, it may be a layer containing any one of a metal, an alloy, an intermetal compound, a metal boride, a metal carbide, a metal silicate, and a metal phosphide, which have a function of generating a spin current due to the spin Hall effect when an electric current flows. Further, for example, it may be a layer that has a (001) oriented tetragonal or cubic structure and contains at least one element selected from the group consisting of Al, Cr, Fe, Co, Rh, Pd, Ag, Ir, Pt, Au, Mo, W, and Pt. The second underlayer22may be a laminate made of materials containing alloys of the metal elements, or two or more of the metal elements. The alloys of the metal elements include, for example, a cubic AgZn alloy, an AgMg alloy, a CoAl alloy, an FeAl alloy, and a NiAl alloy. The thickness of the second underlayer22may be, for example, in the range of 2 nm or more and 150 nm or less. (First Ru Alloy Layer) The first Ru alloy layer30is a layer containing one or more Ru alloys represented by the following general formula (1). The first Ru alloy layer may be a layer made of the Ru alloy only. RuαX1-α(1) In the general formula (1), the symbol X represents one or more elements selected from the group consisting of Be, B, Ti, Y, Zr, Nb, Mo, Rh, In, Sn, La, Ce, Nd, Sm, Gd, Dy, Er, Ta, W, Re, Os, and Ir. The symbol X may be one or more elements selected from the group consisting of B, Ti, Zr, Nb, Mo, Rh, Ta, W, Re, Os, and Ir. The symbol α represents a number satisfying 0.5<α<1. That is, a Ru content of the Ru alloy contained in the first Ru alloy layer30is in the range of more than 50 atm % and less than 100 atm %, and the amount of the X element (when there are two or more X elements, a total content thereof) is in the range of more than 0 atm % and less than 50 atm %. The symbol α may be a number satisfying 0.5<α<0.95 or may be a number satisfying 0.6<α<0.95. The Ru content of the Ru alloy contained in the first Ru alloy layer30may be uniform or may change in the in-plane direction or the laminating direction of the first Ru alloy layer30. For example, the Ru content of the Ru alloy contained in the first Ru alloy layer30may continuously change in the laminating direction of the first Ru alloy layer30. Also, the Ru content of the Ru alloy contained in the first Ru alloy layer30may increase from a surface of the first Ru alloy layer30on the first ferromagnetic layer40side toward a surface of the first Ru alloy layer30on a side opposite to the first ferromagnetic layer40side (that is, the substrate10side). The thickness of the first Ru alloy layer30may be, for example, in the range of 0.5 nm or more and 10 nm or less. (First Ferromagnetic Layer and Second Ferromagnetic Layer) The first ferromagnetic layer40and the second ferromagnetic layer60are magnetic materials. The first ferromagnetic layer40and the second ferromagnetic layer60each have magnetization. The magnetoresistance effect element101outputs a change in relative angle between magnetization of the first ferromagnetic layer40and magnetization of the second ferromagnetic layer60as a change in resistance value. The magnetization of the second ferromagnetic layer60is easier to move than, for example, the magnetization of the first ferromagnetic layer40. In a case in which a predetermined external force is applied, a magnetization direction of the first ferromagnetic layer40does not change (is pinned), and a magnetization direction of the second ferromagnetic layer60changes. By changing the magnetization direction of the second ferromagnetic layer60with respect to the magnetization direction of the first ferromagnetic layer40, the resistance value of the magnetoresistance effect element101changes. In this case, the first ferromagnetic layer40may be referred to as a magnetization pinned layer, and the second ferromagnetic layer60may be referred to as a magnetization free layer. Although a case in which the first ferromagnetic layer40is a magnetized pinned layer and the second ferromagnetic layer60is a magnetized free layer will be described below as an example, this relationship may be reversed. In addition, since the magnetoresistance effect element101outputs a change in the relative angle between the magnetization of the first ferromagnetic layer40and the magnetization of the second ferromagnetic layer60as a change in the resistance value, it may have a configuration in which both of the magnetization of the first ferromagnetic layer40and the magnetization of the second ferromagnetic layer60move (that is, both of the first ferromagnetic layer40and the second ferromagnetic layer60are magnetization free layers). A difference in easiness of movement between the magnetization of the first ferromagnetic layer40and the magnetization of the second ferromagnetic layer60when a predetermined external force is applied is caused by a difference in coercive force between the first ferromagnetic layer40and the second ferromagnetic layer60. For example, when the thickness of the second ferromagnetic layer60is made thinner than the thickness of the first ferromagnetic layer40, the coercive force of the second ferromagnetic layer60becomes smaller than the coercive force of the first ferromagnetic layer40. Further, for example, an antiferromagnetic layer is provided on a surface of the first ferromagnetic layer40on a side opposite to the non-magnetic metal layer50with a spacer layer interposed therebetween. The first ferromagnetic layer40, the spacer layer, and the antiferromagnetic layer become a synthetic antiferromagnetic structure (an SAF structure). The synthetic antiferromagnetic structure includes two magnetic layers sandwiching the spacer layer. The first ferromagnetic layer40and the antiferromagnetic layer are antiferromagnetically coupled, and thus the coercive force of the first ferromagnetic layer40increases as compared with a case in which there is no antiferromagnetic layer. The antiferromagnetic layer is, for example, IrMn, PtMn, or the like. The spacer layer contains, for example, at least one selected from the group consisting of Ru, Ir, and Rh. A method for creating a difference in coercive force in accordance with a thickness does not require an additional layer such as an antiferromagnetic layer, which may cause parasitic resistance. On the other hand, a method for creating a difference in coercive force using the SAF structure can enhance orientation characteristics of the magnetization of the first ferromagnetic layer40. The first ferromagnetic layer40and the second ferromagnetic layer60each contain a Heusler alloy. The first ferromagnetic layer40and the second ferromagnetic layer60may each be a layer made of only a Heusler alloy. The first ferromagnetic layer40and the second ferromagnetic layer60may contain one Heusler alloy, or may contain two or more Heusler alloys. Compositions of the Heusler alloys contained in the first ferromagnetic layer40and the second ferromagnetic layer60may be the same or different. Also, each of the first ferromagnetic layer40and the second ferromagnetic layer60may be a single layer or a plurality of layers. A Heusler alloy is a half metal in which electrons responsible for a current flowing in an alloy have only upward or downward spins, and spin polarizability is ideally 100%. At least one of the Heusler alloy contained in the first ferromagnetic layer40and the Heusler alloy contained in the second ferromagnetic layer60may contain one or more Heusler alloys represented by the following general formula (2). The Heusler alloy represented by the following general formula (2) may be contained in both of the first ferromagnetic layer40and the second ferromagnetic layer60. Co2(Fe1-β,M1β)M2 (2) In the general formula (2), the symbol M1 represents Mn or Ti, the symbol M2 represents one or more elements selected from the group consisting of Si, Al, Ga, Ge, and Sn, and the symbol β represents a number satisfying 0≤β≤1. The first ferromagnetic layer40and the second ferromagnetic layer60may have the same thickness. The thicknesses of the first ferromagnetic layer40and the second ferromagnetic layer60may be, for example, in the range of 2 nm or more and 20 nm or less. (Non-Magnetic Metal Layer) The non-magnetic metal layer50hinders the magnetic coupling between the first ferromagnetic layer40and the second ferromagnetic layer60. The non-magnetic metal layer50contains a non-magnetic metal. The non-magnetic metal layer50may be a layer made of a non-magnetic metal. The non-magnetic metal layer50preferably contains one or more elements selected from the group consisting of Ag, Cu, Au, Ag, Al, and Cr as a main component. Being a main constituent element means that the ratio of Cu, Au, Ag, Al, or Cr in a composition formula is 50% or more. The non-magnetic metal layer50preferably contains Ag, and preferably contains Ag as the main constituent element. Since Ag has a long spin diffusion length, the MR ratio becomes larger in the magnetoresistance effect element101using Ag. A thickness of the non-magnetic metal layer50may be, for example, in the range of 1 nm or more and 10 nm or less. (Cap Layer) The cap layer80is located on a side opposite to the substrate10of the magnetoresistance effect element101. The cap layer80protects the second ferromagnetic layer60. The cap layer80inhibits diffusion of atoms from the second ferromagnetic layer60. In addition, the cap layer80also contributes to crystal orientation characteristics of each layer of the magnetoresistance effect element101. The magnetizations of the first ferromagnetic layer40and the second ferromagnetic layer60are stabilized more by the cap layer80, and thus the MR ratio of the magnetoresistance effect element101is improved. The cap layer80may be a single layer or a plurality of layers. The cap layer80may be used as an electrode for passing the electric current for detection. The cap layer80may contain, for example, one or more elements selected from the group consisting of Al, Si, Cr, Fe, Co, Ni, Cu, Se, Ru, Rh, Pd, Ag, Te, Pt, Au, B, C, Ti, and Ta. The cap layer80may contain, for example, one or more elements selected from the group consisting of Al, Si, Cr, Fe, Co, Ni, Cu, Se, Ru, Rh, Pd, Ag, Te, Pt, and Au, and one or more elements selected from the group consisting of N, B, C, Ti, and Ta. The cap layer80may contain, for example, one or more elements selected from Ru, Ag, Al, Cu, Au, Cr, Mo, Pt, W, Ta, Pd, and Ir. The thickness of the cap layer80may be, for example, in the range of 2 nm or more and 10 nm or less. Composition analysis of each layer constituting the magnetoresistance effect element can be performed using energy dispersive X-ray analysis (EDS). Also, by performing EDS analysis, for example, a composition distribution in a film thickness direction of each material can be confirmed. The magnetoresistance effect element101according to the present embodiment can be manufactured, for example, by laminating the underlayer20(the first underlayer21and the second underlayer22), the first Ru alloy layer30, the first ferromagnetic layer40, the non-magnetic metal layer50, the second ferromagnetic layer60, and the cap layer80on the substrate10in order. For a film forming method of each layer, for example, a sputtering method, a vapor deposition method, a laser ablation method, or a molecular beam epitaxy (MBE) method can be used. In the magnetoresistance effect element101of the present embodiment having the above configuration, the first ferromagnetic layer40, the non-magnetic metal layer50, and the second ferromagnetic layer60are laminated on the first Ru alloy layer30, the first Ru alloy layer30contains one or more Ru alloys represented by the above general formula (1), the first ferromagnetic layer40and the second ferromagnetic layer60include the Heusler alloys, and thus it can be manufactured at a relatively low temperature and has an improved MR ratio. Although embodiments of the present disclosure have been described in detail with reference to the drawings, configurations and combinations thereof in respective embodiments are examples, and additions, omissions, substitutions, and other modifications of the configurations can be made within the range not departing from the gist of the present disclosure. Modified examples of the magnetoresistance effect element101are shown inFIGS.2to5. FIG.2is a cross-sectional view of a magnetoresistance effect element according to a first modified example. A magnetoresistance effect element102shown inFIG.2is different from the magnetoresistance effect element101shown inFIG.1in that a first CoFeB layer91is disposed between the first Ru alloy layer30and the first ferromagnetic layer40. For this reason, inFIG.2, the same constituent elements as those inFIG.1will be denoted by the same reference numerals, and descriptions thereof will be omitted. The first CoFeB layer91contains Co, Fe, and B. The first CoFeB layer91may be a layer made of only Fe, Co, and B. A thickness of the first CoFeB layer91may be, for example, in the range of 0.2 nm or more and 10 nm or less. For a film forming method of the first CoFeB layer91, for example, a sputtering method, a vapor deposition method, a laser ablation method, or a molecular beam epitaxial (MBE) method can be used. In the magnetoresistance effect element102according to the first modified example, the first CoFeB layer91is disposed between the first Ru alloy layer30and the first ferromagnetic layer40, and thus the MR ratio is further improved. Instead of the first CoFeB layer91, a CoFe layer containing Co and Fe may be provided. FIG.3is a cross-sectional view of a magnetoresistance effect element according to a second modified example. A magnetoresistance effect element103shown inFIG.3is different from the magnetoresistance effect element101shown inFIG.1in that the first CoFeB layer91is disposed between the first Ru alloy layer30and the first ferromagnetic layer40, a second Ru alloy layer70is provided on a side of the second ferromagnetic layer60(the cap layer80side) opposite to the non-magnetic metal layer50side, and a second CoFeB layer92is disposed between the second Ru alloy layer70and the second ferromagnetic layer60. For this reason, inFIG.3, the same constituent elements as those inFIG.1will be denoted by the same reference numerals, and descriptions thereof will be omitted. The second Ru alloy layer70contains one or more Ru alloys represented by the general formula (1), similarly to the first Ru alloy layer30. The second Ru alloy layer70may be a layer made of only the Ru alloy represented by the general formula (1). The Ru alloy contained in the second Ru alloy layer70and the Ru alloy contained in the first Ru alloy layer30may be the same or different. Also, in a case in which the second Ru alloy layer70is provided, the cap layer80may be omitted. The thickness of the second Ru alloy layer70may be, for example, in the range of 0.5 nm or more and 10 nm or less. The second CoFeB layer92contains Co, Fe, and B. The second CoFeB layer92may be a layer made of only Fe, Co, and B. The thickness of the second CoFeB layer92may be, for example, in the range of 0.2 nm or more and 10 nm or less. For a film forming method of the second Ru alloy layer70and the second CoFeB layer92, for example, a sputtering method, a vapor deposition method, a laser ablation method, or a molecular beam epitaxial (MBE) method can be used. In the magnetoresistance effect element103according to the second modification, the first CoFeB layer91is disposed between the first Ru alloy layer30and the first ferromagnetic layer40, the second Ru alloy layer70is provided, and the second CoFeB layer92is disposed between the second Ru alloy layer70and the second ferromagnetic layer60, and thus the MR ratio is further improved. Instead of the first CoFeB layer91and the second CoFeB layer92, a CoFe layer containing Co and Fe may be provided. FIG.4is a cross-sectional view of a magnetoresistance effect element according to a third modified example. A magnetoresistance effect element104shown inFIG.4is different from the magnetoresistance effect element101shown inFIG.1in that the first Ru alloy layer30is a laminate having a two-layered structure in which a Ru content of a Ru alloy differs in the laminating direction. For this reason, inFIG.4, the same constituent elements as those inFIG.1will be denoted by the same reference numerals, and descriptions thereof will be omitted. A lower first Ru alloy layer31on a lower side (the substrate10side) of the first Ru alloy layer30in the laminating direction has a relatively high Ru content and a relatively low amount of the X element as compared with an upper first Ru alloy layer32on an upper side (the first ferromagnetic layer40side) thereof in the laminating direction. The lower first Ru alloy layer31and the upper first Ru alloy layer32can be formed by changing a sputtering speed of a sputtering device between the lower first Ru alloy layer31and the upper first Ru alloy layer32, for example, using a co-sputtering method using a Ru target and an X element target. The thickness of the lower first Ru alloy layer31may be, for example, in the range of 0.2 nm or more and 10 nm or less. The thickness of the upper first Ru alloy layer32may be, for example, in the range of 0.2 nm or more and 10 nm or less. In the magnetoresistance effect element104according to the third modified example, the first Ru alloy layer30is a laminate having a two-layered structure of the lower first Ru alloy layer31and the upper first Ru alloy layer32, and the lower first Ru alloy layer31has a relatively high Ru content and a relatively low amount of the X element as compared with the upper first Ru alloy layer32, and thus the MR ratio is further improved. FIG.5is a cross-sectional view of a magnetoresistance effect element according to a fourth modified example. A magnetoresistance effect element105shown inFIG.5is different from the magnetoresistance effect element101shown inFIG.1in that the first CoFeB layer91is disposed between the first Ru alloy layer30and the first ferromagnetic layer40, the second Ru alloy layer70is provided on a side of the second ferromagnetic layer60(the cap layer80side) opposite to the non-magnetic metal layer50side, the second CoFeB layer92is disposed between the second Ru alloy layer70and the second ferromagnetic layer60, and the first Ru alloy layer30and the second Ru alloy layer70are laminates each having a two-layered structure in which a Ru content of a Ru alloy differs in the laminating direction. For this reason, inFIG.5, the same constituent elements as those inFIG.1will be denoted by the same reference numerals, and descriptions thereof will be omitted. The first CoFeB layer91is the same as in the case of the magnetoresistance effect element102of the first modified example. The second CoFeB layer92is the same as in the case of the magnetoresistance effect element103of the second modified example. The lower first Ru alloy layer31and the upper first Ru alloy layer32of the first Ru alloy layer30are the same as in the case of the magnetoresistance effect element104of the third modified example. A lower second Ru alloy layer71on a lower side (the second ferromagnetic layer60side) of the second Ru alloy layer70in the laminating direction has a relatively low Ru content and a relatively high amount of the X element as compared with an upper second Ru alloy layer72on an upper side (the cap layer80side) thereof in the laminating direction. Thicknesses and a film forming method of the lower second Ru alloy layer71and the upper second Ru alloy layer72can be the same as in the case of the lower first Ru alloy layer31and the upper first Ru alloy layer32. In the magnetoresistance effect element105according to the fourth modified example, the first CoFeB layer91is disposed between the first Ru alloy layer30and the first ferromagnetic layer40, the second Ru alloy layer70is provided, and the second CoFeB layer92is disposed between the second Ru alloy layer70and the second ferromagnetic layer60, the lower first Ru alloy layer31has a relatively high Ru content and a relatively low amount of the X element as compared with the upper first Ru alloy layer32, the lower second Ru alloy layer71has a relatively low Ru content and a relatively high amount of the X element as compared with the upper second Ru alloy layer72, and thus the MR ratio is further improved. The above-mentioned magnetoresistance effect elements101to105can be used for various purposes. The magnetoresistance effect elements101to105can be applied to, for example, a magnetic head, a magnetic sensor, a magnetic memory, a high frequency filter, and the like. Next, application examples of the magnetoresistance effect elements will be described by taking a case in which the magnetoresistance effect element101is used as a magnetoresistance effect element as an example. FIG.6is a cross-sectional view of a magnetic recording element201according to Application Example 1.FIG.6is a cross-sectional view of the magnetic recording element201cut in the laminating direction. As shown inFIG.6, the magnetic recording element201has a magnetic head MH and a magnetic recording medium W. InFIG.6, one direction in which the magnetic recording medium W extends is an X direction, and a direction perpendicular to the X direction is a Y direction. An XY plane is parallel to a main plane of the magnetic recording medium W. A direction that connects the magnetic recording medium W to the magnetic head MH and is perpendicular to the XY plane is defined as a Z direction. The magnetic head MH has an air bearing surface (a medium facing surface) S that faces a surface of the magnetic recording medium W. The magnetic head MH moves in directions of arrow +X and arrow −X along the surface of the magnetic recording medium W at a position separated by a certain distance from the magnetic recording medium W. The magnetic head MH has a magnetoresistance effect element101that acts as a magnetic sensor, and a magnetic recording unit (not shown). A resistance measuring instrument220measures a resistance value of the magnetoresistance effect element101in the laminating direction. The magnetic recording unit applies a magnetic field to a recording layer W1of the magnetic recording medium W to determine a magnetization direction of the recording layer W1. That is, the magnetic recording unit performs magnetic recording of the magnetic recording medium W. The magnetoresistance effect element101reads information on the magnetization of the recording layer W1written by the magnetic recording unit. The magnetic recording medium W has the recording layer W1and a backing layer W2. The recording layer W1is a portion for performing the magnetic recording, and the backing layer W2is a magnetic path (a path for magnetic flux) for circulating magnetic flux for writing back to the magnetic head MH. The recording layer W1records magnetic information as a magnetization direction. The second ferromagnetic layer60of the magnetoresistance effect element101is, for example, a magnetization free layer. For this reason, the second ferromagnetic layer60exposed on the air bearing surface S is affected by the magnetization recorded on the recording layer W1of the opposing magnetic recording medium W. For example, inFIG.6, a magnetization direction of the second ferromagnetic layer60is directed in the +Z direction due to the influence of magnetization of the recording layer W1in the +Z direction. In this case, magnetization directions of the first ferromagnetic layer40and the second ferromagnetic layer60, which are magnetization pinned layers, are parallel to each other. Here, a resistance in a case in which the magnetization directions of the first ferromagnetic layer40and the second ferromagnetic layer60are parallel is different from a resistance in a case in which the magnetization directions of the first ferromagnetic layer40and the second ferromagnetic layer60are antiparallel. As a difference between a resistance value in the case of being parallel and a resistance value in the case of being antiparallel increases, the MR ratio of the magnetoresistance effect element101increases. The magnetoresistance effect element101according to the present embodiment has a large MR ratio. Accordingly, the resistance measuring instrument220can accurately read the information on the magnetization of the recording layer W1as a change in the resistance value. A shape of the magnetoresistance effect element101of the magnetic head MH is not particularly limited. For example, in order to avoid the influence of a leaked magnetic field of the magnetic recording medium W on the first ferromagnetic layer40of the magnetoresistance effect element101, the first ferromagnetic layer40may be provided at a position separated from the magnetic recording medium W. FIG.7is a cross-sectional view of a magnetic recording element202according to Application Example 2.FIG.7is a cross-sectional view of the magnetic recording element202cut in the laminating direction. As shown inFIG.7, the magnetic recording element202has a magnetoresistance effect element101, a power supply230, and a measuring unit240. The power supply230applies a potential difference in the laminating direction of the magnetoresistance effect element101. The power supply230is, for example, a DC power supply. The measuring unit240measures the resistance value of the magnetoresistance effect element101in the laminating direction. When a potential difference is generated between the first ferromagnetic layer40and the second ferromagnetic layer60by the power supply230, an electric current flows in the laminating direction of the magnetoresistance effect element101. The electric current is spin-polarized when passing through the first ferromagnetic layer40, and becomes a spin-polarized current. The spin-polarized current reaches the second ferromagnetic layer60via the non-magnetic metal layer50. The magnetization of the second ferromagnetic layer60receives a spin transfer torque (STT) due to the spin-polarized current and is reversed. By changing the relative angle between the magnetization direction of the first ferromagnetic layer40and the magnetization direction of the second ferromagnetic layer60, the resistance value of the magnetoresistance effect element101in the laminating direction changes. The resistance value of the magnetoresistance effect element101in the laminating direction is read out by the measuring unit240. That is, the magnetic recording element202shown inFIG.7is a spin transfer torque (STT) type magnetic recording element. FIG.8is a cross-sectional view of a magnetic recording element203according to Application Example 3.FIG.8is a cross-sectional view of the magnetic recording element203cut in the laminating direction. In the magnetoresistance effect element101shown inFIG.8, the first ferromagnetic layer40is a magnetization free layer, and the second ferromagnetic layer60is a magnetization pinned layer. As shown inFIG.8, in the magnetic recording element203, the second underlayer22is a spin-orbit torque wiring wSOT. The spin-orbit torque wiring may be disposed between the first underlayer21and the second underlayer22. The second underlayer22(spin-orbit torque wiring wSOT) extends in one direction of the in-plane direction. The power supply230is connected to a first end and a second end of the second underlayer22. The magnetoresistance effect element101is sandwiched between the first end and the second end in a plan view. The power supply230causes a write current to flow along the second underlayer22. The measuring unit240measures the resistance value of the magnetoresistance effect element101in the laminating direction. When a potential difference is created between the first end and the second end of the second underlayer22by the power supply230, an electric current flows in the in-plane direction of the second underlayer22. The second underlayer22has a function of generating a spin current due to the spin Hall effect when an electric current flows. The second underlayer22contains, for example, any of a metal, an alloy, an intermetallic compound, a metal boride, a metal carbide, a metal silicate, and a metal phosphide, which have a function of generating a spin current due to the spin Hall effect when an electric current flows. For example, the second underlayer22contains a non-magnetic metal having an atomic number of 39 or more having d electrons or f electrons in the outermost shell. When an electric current flows in the in-plane direction of the second underlayer22, the spin Hall effect is generated due to spin-orbit interaction. The spin Hall effect is a phenomenon in which a moving spin is bent in a direction orthogonal to a direction in which an electric current flows. The spin Hall effect creates uneven distribution of spins in the spin-orbit torque wiring wSOTand induces a spin current in a thickness direction of the second underlayer22. The spins are injected from the second underlayer22into the first ferromagnetic layer40via the first Ru alloy layer30by the spin current. The spins injected into the first ferromagnetic layer40apply a spin-orbit torque (SOT) to the magnetization of the first ferromagnetic layer40. The first ferromagnetic layer40receives the spin-orbit torque (SOT) and reverses its magnetization. By changing the relative angle between the magnetization direction of the second ferromagnetic layer60and the magnetization direction of the first ferromagnetic layer40, the resistance value of the magnetoresistance effect element101in the laminating direction changes. The resistance value of the magnetoresistance effect element101in the laminating direction is read out by the measuring unit240. That is, the magnetic recording element203shown inFIG.8is a spin-orbit torque (SOT) type magnetic recording element. FIG.9is a cross-sectional view of a domain wall motion element (a domain wall motion type magnetic recording element) according to Application Example 4. The domain wall motion element204has a magnetoresistance effect element101, a first magnetization pinned layer251and a second magnetization pinned layer252. The underlayer20and the first Ru alloy layer30are, for example, between the first magnetization pinned layer251and the second magnetization pinned layer252and are located at positions overlapping the second ferromagnetic layer60. InFIG.9, a direction in which the first ferromagnetic layer40extends is the X direction, a direction perpendicular to the X direction is the Y direction, and a direction perpendicular to the XY plane is the Z direction. The first magnetization pinned layer251and the second magnetization pinned layer252are connected to the first end and the second end of the first ferromagnetic layer40. The first end and the second end sandwich the second ferromagnetic layer60and the non-magnetic metal layer50in the X direction. The first ferromagnetic layer40is a layer that can magnetically record information by changing its internal magnetic state. The first ferromagnetic layer40has a first magnetic domain MD1 and a second magnetic domain MD2 therein. Magnetization of a position of the first ferromagnetic layer40that overlaps the first magnetization pinned layer251or the second magnetization pinned layer252in the Z direction is fixed in one direction. The magnetization of the position that overlaps the first magnetization pinned layer251in the Z direction is fixed in the +Z direction, for example, and the magnetization of the position that overlaps the second magnetization pinned layer252in the Z direction is fixed in the −Z direction, for example. As a result, a domain wall DW is formed at a boundary between the first magnetic domain MD1 and the second magnetic domain MD2. The first ferromagnetic layer40can have the domain wall DW therein. In the first ferromagnetic layer40shown inFIG.9, a magnetization MMD1of the first magnetic domain MD1 is oriented in the +Z direction, and a magnetization MMD2of the second magnetic domain MD2 is oriented in the −Z direction. The domain wall motion element204can record data in multiple values or continuously depending on a position of the domain wall DW of the first ferromagnetic layer40. The data recorded in the first ferromagnetic layer40is read out as a change in a resistance value of the domain wall motion element204when a read current is applied. Proportions of the first magnetic domain MD1 and the second magnetic domain MD2 in the first ferromagnetic layer40change as the domain wall DW moves. A magnetization M2of the second ferromagnetic layer60is, for example, in the same direction (parallel) as the magnetization MMD1of the first magnetic domain MD1 and in an opposite direction (antiparallel) to the magnetization MMD2of the second magnetic domain MD2. When the domain wall DW moves in the +X direction, and the area of the first magnetic domain MD1 in a portion overlapping the second ferromagnetic layer60in a plan view in the Z direction is widened, the resistance value of the domain wall motion element204decreases. On the contrary, when the domain wall DW moves in the −X direction and an area of the second magnetic domain MD2 in a portion overlapping the second ferromagnetic layer60in the plan view in the Z direction is widened, the resistance value of the domain wall motion element204increases. The domain wall DW moves by passing a write current in the X direction of the first ferromagnetic layer40or by applying an external magnetic field. For example, when a write current (for example, an electric current pulse) is applied in the +X direction of the first ferromagnetic layer40, electrons flow in the −X direction opposite to the electric current, and thus the domain wall DW moves in the −X direction. When an electric current flows from the first magnetic domain MD1 to the second magnetic domain MD2, the electrons spin-polarized in the second magnetic domain MD2 reverse the magnetization MMD1of the first magnetic domain MD1. By reversing the magnetization MMD1of the first magnetic domain MD1, the domain wall DW moves in the −X direction. FIG.10is a schematic diagram of a high frequency device205according to Application Example 5. As shown inFIG.10, the high frequency device205has a magnetoresistance effect element101, a direct current power supply260, an inductor261, a capacitor262, an output port263, and wirings264and265. The wiring264connects the magnetoresistance effect element101to the output port263. The wiring265branches from the wiring264and reaches a ground G via the inductor261and the direct current power supply260. For the direct current power supply260, the inductor261, and the capacitor262, known ones can be used. The inductor261cuts a high frequency component of an electric current and allows an invariant component of the electric current to pass therethrough. The capacitor262passes a high frequency component of an electric current therethrough and cuts an invariant component of the electric current. The inductor261is provided at a portion at which a flow of a high-frequency current is desired to be inhibited, and the capacitor262is provided at a portion at which a flow of a direct current is desired to be inhibited. When an alternating current or an alternating magnetic field is applied to a ferromagnetic layer included in the magnetic resistance effect element101, the magnetization of the first ferromagnetic layer40is subjected to procession. The magnetization of the first ferromagnetic layer40oscillates strongly in a case in which a frequency of the high-frequency current or high-frequency magnetic field applied to the first ferromagnetic layer40is close to a ferromagnetic resonance frequency of the first ferromagnetic layer40, and does not oscillate very much at a frequency separated from the ferromagnetic resonance frequency of the first ferromagnetic layer40. This phenomenon is called a ferromagnetic resonance phenomenon. The resistance value of the magnetoresistance effect element101changes due to the oscillation of the magnetization of the first ferromagnetic layer40. The direct current power supply260applies a direct current to the magnetoresistance effect element101. The direct current flows in the laminating direction of the magnetoresistance effect element101. The direct current flows to the ground G through the wirings264and265and the magnetoresistance effect element101. A potential of the magnetoresistance effect element101changes in accordance with the Ohm's law. A high-frequency signal is output from the output port263in response to a change in the potential (a change in the resistance value) of the magnetoresistance effect element101. EXAMPLES Examples 1-1 to 80 and Comparative Examples 1-1 to 48 The magnetoresistance effect element101shown inFIG.1was manufactured. A structure of each layer was set as follows. Substrate10: Silicon single crystal substrate with thermal oxide film, thickness 0.625 mm Underlayer20: First underlayer21: Cr layer, thickness 10 nm Second underlayer22: Ag layer, thickness 100 nm First Ru alloy layer30: RuαX1-αlayer (X is Be, B, Ti, Zr, Nb, Mo, Rh, In, Sn, Nd, Ta, W, Re, Os, and Ir, α is 1, 0.95, 0.90, 0.80, 0.75, 0.60, 0.50, and 0.25.), thickness 5 nm First ferromagnetic layer40: Co2MnGe layer, thickness 10 nm Non-magnetic metal layer50: Ag layer, thickness 5 nm Second ferromagnetic layer60: Co2MnGe layer, thickness 7 nm Cap layer80: Ru layer, thickness 5 nm The magnetoresistance effect element101was manufactured through the following procedure. First, the first underlayer21was formed using a sputtering method on a thermal oxide film of a silicon single crystal substrate with the thermal oxide film. Next, the second underlayer22(Ag layer) was formed on the first underlayer21using a sputtering method, thereby forming the underlayer20. The substrate10on which the underlayer20was formed was heated at 300° C. for 15 minutes, and then cooled to room temperature. After the cooling, the first Ru alloy layer30(RuαX1-αlayer) was formed on the underlayer20formed on the substrate10using a co-sputtering method using a Ru target and an X element target. The amount of the X element in the first Ru alloy layer30was adjusted in accordance with a sputtering speed of a sputtering device. Next, the first ferromagnetic layer40, the non-magnetic metal layer50, and the second ferromagnetic layer60were formed on the first Ru alloy layer30in order using a sputtering method. The substrate10on which the second ferromagnetic layer60was formed was heated at 500° C. for 15 minutes and then cooled to a room temperature. After the cooling, the cap layer80(Ru layer) was formed on the second ferromagnetic layer60using an electron beam vapor deposition method. An MR ratio of the manufactured magnetoresistance effect element101was measured. The results are shown in Tables 1A to 1D below andFIG.11. For obtaining the MR ratio, a change in the resistance value of the magnetoresistance effect element101was measured by monitoring a voltage applied to the magnetoresistance effect element101using a voltmeter while sweeping a magnetic field from an outside to the magnetoresistance effect element101in a state in which a constant electric current flows in the laminating direction of the magnetoresistance effect element101. The resistance value in a case in which the magnetization directions of the first ferromagnetic layer40and the second ferromagnetic layer60are parallel, and the resistance value in a case in which the magnetization directions of the first ferromagnetic layer40and the second ferromagnetic layer60are antiparallel were measured, and the MR ratio was calculated from the obtained resistance values using the following formula. The measurement of the MR ratio was performed at 300 K (a room temperature). MR ratio (%)=(RAP−RP)/RP×100 RPis the resistance value when the directions of magnetization of the first ferromagnetic layer40and the second ferromagnetic layer60are parallel. RAPis the resistance value when the directions of magnetization of the first ferromagnetic layer40and the second ferromagnetic layer60are antiparallel. TABLE 1AFirst Ru alloy layerType of X elementAmount of X elementFirst ferromagneticSecond ferromagneticin RuX alloyin RuX alloy (atm %)layerNon-magnetic layerlayerMR ratio (%)Comparative ExampleBe0Co2MnGeAgCo2MnGe2.91-1Example 1-154.3Example 1-2105.1Example 1-3205.2Example 1-4255.0Example 1-5404.9Comparative Example502.61-2Comparative Example752.51-3Comparative ExampleB0Co2MnGeAgCo2MnGe2.91-4Example 1-655.7Example 1-7107.1Example 1-8207.3Example 1-9257.1Example 1-10406.1Comparative Example503.21-5Comparative Example753.01-6Comparative ExampleTi0Co2MnGeAgCo2MnGe2.91-7Example 1-1156.2Example 1-12107.2Example 1-13207.3Example 1-14257.1Example 1-15406.1Comparative Example502.81-8Comparative Example752.81-9Comparative ExampleY0Co2MnGeAgCo2MnGe2.91-10Example 1-1654.1Example 1-17105.1Example 1-18205.4Example 1-19255.0Example 1-20404.7Comparative Example502.51-11Comparative Example752.31-12 TABLE 1BFirst Ru alloy layerType of X elementAmount of X elementFirst ferromagneticSecond ferromagneticin RuX alloyin RuX alloy (atm %)layerNon-magnetic layerlayerMR ratio (%)Comparative ExampleZr0Co2MnGeAgCo2MnGe2.91-13Example 1-2156.4Example 1-22107.3Example 1-23207.8Example 1-24257.4Example 1-25406.8Comparative Example503.61-14Comparative Example752.61-15Comparative ExampleNb0Co2MnGeAgCo2MnGe2.91-16Example 1-2656.5Example 1-27107.2Example 1-28207.8Example 1-29257.1Example 1-30406.7Comparative Example503.91-17Comparative Example752.81-18Comparative ExampleMo0Co2MnGeAgCo2MnGe2.91-19Example 1-3156.0Example 1-32106.7Example 1-33207.2Example 1-34257.2Example 1-35406.0Comparative Example503.41-20Comparative Example752.81-21Comparative ExampleRh0Co2MnGeAgCo2MnGe2.91-22Example 1-3656.1Example 1-37106.7Example 1-38206.9Example 1-39256.8Example 1-40405.9Comparative Example503.41-23Comparative Example752.21-24 TABLE 1CFirst Ru alloy layerType of X elementAmount of X elementFirst ferromagneticSecond ferromagneticin RuX alloyin RuX alloy (atm %)layerNon-magnetic layerlayerMR ratio (%)Comparative ExampleIn0Co2MnGeAgCo2MnGe2.91-25Example 1-4154.4Example 1-42105.4Example 1-43205.3Example 1-44254.7Example 1-45404.0Comparative Example502.81-26Comparative Example752.51-27Comparative ExampleSn0Co2MnGeAgCo2MnGe2.91-28Example 1-4654.7Example 1-47105.3Example 1-48205.3Example 1-49255.3Example 1-50405.1Comparative Example503.81-29Comparative Example751.91-30Comparative ExampleNd0Co2MnGeAgCo2MnGe2.91-31Example 1-5155.0Example 1-52105.7Example 1-53205.1Example 1-54254.8Example 1-55404.4Comparative Example503.41-32Comparative Example752.21-33Comparative ExampleTa0Co2MnGeAgCo2MnGe2.91-34Example 1-5656.5Example 1-57107.6Example 1-58207.8Example 1-59257.5Example 1-60406.8Comparative Example504.31-35Comparative Example752.91-36 TABLE 1DFirst Ru alloy layerType of X elementAmount of X elementFirst ferromagneticSecond ferromagneticin RuX alloyin RuX alloy (atm %)layerNon-magnetic layerlayerMR ratio (%)Comparative ExampleW0Co2MnGeAgCo2MnGe2.91-37Example 1-6156.3Example 1-62107.0Example 1-63207.6Example T64257.4Example 1-65406.6Comparative Example503.61-38Comparative Example752.81-39Comparative ExampleRe0Co2MnGeAgCo2MnGe2.91-40Example 1-6656.5Example 1-67106.9Example 1-68207.0Example 1-69256.8Example 1-70406.8Comparative Example503.51-41Comparative Example752.81-42Comparative ExampleOs0Co2MnGeAgCo2MnGe2.91-43Example 1-7156.2Example 1-72106.6Example 1-73206.8Example 1-74256.7Example 1-75406.7Comparative Example503.41-44Comparative Example752.61-45Comparative ExampleIr0Co2MnGeAgCo2MnGe2.91-46Example 1-7655.9Example 1-77107.0Example 1-78206.8Example 1-79256.2Example 1-80405.4Comparative Example502.81-47Comparative Example752.71-48 From the results of Tables 1A to 1D and the graph ofFIG.11, it can be understood that, in the magnetoresistance effect elements101of Examples 1-1 to 1-80 in which the first ferromagnetic layer40and the second ferromagnetic layer60contain the Heusler alloys, and the Ru alloy of the first Ru alloy layer30contains a predetermined X element within the scope of the present disclosure, the MR ratio is improved. Although the reason why the MR ratio is improved is not always clear, it is considered that the first Ru alloy layer30containing the X element within the scope of the present disclosure has a hexagonal close-packed (hcp) structure and an equivalent crystal plane represented by the [0001] plane parallel to a film plane of the hcp structure is mainly oriented. That is, the reason why the MR ratio is improved is considered that, since the first Ru alloy layer30has an hcp structure, mutual atomic diffusion between the second underlayer22and the first ferromagnetic layer40is inhibited. Further, secondly, it is considered that, since the first Ru alloy layer30is mainly oriented to the equivalent crystal plane represented by the [0001] plane, its lattice match with the first ferromagnetic layer40formed on the first Ru alloy layer30is improved, and thus the crystallinity of the first ferromagnetic layer40(Heusler alloy) is enhanced. Also, from the results of Tables 1A to 1D and the graph ofFIG.11, it can be understood that the MR ratio is remarkably improved in a case in which the X element is B, Ti, Zr, Nb, Mo, Rh, Ta, W, Re, Os, and Ir. The reason for this is considered that these elements have higher melting points than the metal elements contained in the Heusler alloy of the first ferromagnetic layer40, the mutual atomic diffusion between the second underlayer22and the first ferromagnetic layer40is further inhibited. Examples 2-1 to 55 and Comparative Examples 2-1 to 22 The magnetoresistance effect element101was manufactured in the same manner as in Examples 1-1 to 80, and its MR ratio was measured except that the first ferromagnetic layer40is a Co2Fe(GaGe) layer (having a thickness of 10 nm) and the second ferromagnetic layer60is a Co2Fe(GaGe) layer (having a thickness of 7 nm), and that X of the first Ru alloy layer30(RuαX1-αlayer) is B, Ti, Zr, Nb, Mo, Rh, Ta, W, Re, Os, and Ir, and a is 0.95, 0.90, 0.80, 0.75, 0.60, 0.50, and 0.25. The results are shown in Tables 2A-2C below andFIG.12. TABLE 2AFirst Ru alloy layerType of X elementAmount of X elementFirst ferromagneticSecond ferromagneticin RuX alloyin RuX alloy (atm %)layerNon-magnetic layerlayerMR ratio (%)Example 2-1B5Co2Fe(GaGe)AgCo2Fe(GaGe)8.5Example 2-2109.9Example 2-32010.4Example 2-42510.1Example 2-5409.0Comparative Example506.12-1Comparative Example756.02-2Example 2-6Ti5Co2Fe(GaGe)AgCo2Fe(GaGe)8.4Example 2-7109.7Example 2-82010.5Example 2-92510.0Example 2-10409.2Comparative Example505.82-3Comparative Example755.82-4Example 2-11Zr5Co2Fe(GaGe)AgCo2Fe(GaGe)9.1Example 2-121010.3Example 2-132011.0Example 2-142510.4Example 2-15409.8Comparative Example506.62-5Comparative Example755.62-6Example 2-16Nb5Co2Fe(GaGe)AgCo2Fe(GaGe)9.5Example 2-171010.2Example 2-182010.8Example 2-19259.8Example 2-20409.5Comparative Example506.72-7Comparative Example755.42-8 TABLE 2BFirst Ru alloy layerType of X elementAmount of X elementFirst ferromagneticSecond ferromagneticin RuX alloyin RuX alloy (atm %)layerNon-magnetic layerlayerMR ratio (%)Example 2-21Mo5Co2Fe(GaGe)AgCo2Fe(GaGe)8.5Example 2-22109.5Example 2-232010.3Example 2-242510.0Example 2-25409.1Comparative Example506.22-9Comparative Example755.52-10Example 2-26Rh5Co2Fe(GaGe)AgCo2Fe(GaGe)8.4Example 2-27109.1Example 2-28209.4Example 2-29259.5Example 2-30408.4Comparative Example506.22-11Comparative Example754.42-12Example 2-31Ta5Co2Fe(GaGe)AgCo2Fe(GaGe)9.6Example 2-321010.8Example 2-332011.1Example 2-342510.7Example 2-354010.0Comparative Example507.02-13Comparative Example756.02-14Example 2-36W5Co2Fe(GaGe)AgCo2Fe(GaGe)9.4Example 2-371010.3Example 2-382010.8Example 2-392510.0Example 2-40409.3Comparative Example506.22-15Comparative Example755.52-16 TABLE 2CFirst Ru alloy layerType of X elementAmount of X elementFirst ferromagneticSecond ferromagneticin RuX alloyin RuX alloy (atm %)layerNon-magnetic layerlayerMR ratio (%)Example 2-41Re5Co2Fe(GaGe)AgCo2Fe(GaGe)9.1Example 2-42109.6Example 2-43209.7Example 2-44259.6Example 2-45409.6Comparative Example506.22-17Comparative Example755.52-18Example 2-46Os5Co2Fe(GaGe)AgCo2Fe(GaGe)8.8Example 2-47109.7Example 2-48209.9Example 2-49259.8Example 2-50409.7Comparative Example506.22-19Comparative Example755.32-20Example 2-51Ir5Co2Fe(GaGe)AgCo2Fe(GaGe)8.4Example 2-52109.2Example 2-53209.3Example 2-54259.2Example 2-55408.2Comparative Example505.52-21Comparative Example755.12-22 From the results in Tables 2A to 2C and the graph ofFIG.12, it was confirmed that, even in a case in which the Heusler alloy contained in the first ferromagnetic layer40and the second ferromagnetic layer60is Co2Fe(GaGe), the MR ratio is improved in the magnetoresistance effect element101of Examples 2-1 to 2-55 in which the first Ru alloy layer30contains a predetermined X element within the scope of the present disclosure. Also, it was confirmed that the MR ratio is improved in a case in which the Heusler alloy contained in the first ferromagnetic layer40and the second ferromagnetic layer60is Co2Fe(GaGe) as compared with a case in which the Heusler alloy contained in the first ferromagnetic layer40and the second ferromagnetic layer60is Co2MnGe. The reason why this MR ratio is improved is considered that a Co-based Heusler alloy containing Fe has a relatively high melting point, and thus the atomic mutual diffusion between the second underlayer22and the first ferromagnetic layer40is further inhibited. Examples 3-1 to 11 The magnetoresistance effect element102was manufactured in the same manner as in Examples 1-8, 13, 23, 28, 33, 38, 58, 63, 68, 73, and 78, except that the first CoFeB layer91(having a thickness of 1 nm) was provided between the first Ru alloy layer30and the first ferromagnetic layer40, and its MR ratio was measured. The first CoFeB layer91was formed using a sputtering method. The results are shown in Table 3 below. TABLE 3First Ru alloy layerType of XAmount of XFirstelement in RuXelement in RuXCoFeBFirst ferromagneticSecond ferromagneticMR ratioalloyalloy (atm %)layerlayerNon-magnetic layerlayer(%)Example 3-1B20PresenceCo2MnGeAgCo2MnGe12.6Example 3-2Ti20Presence12.5Example 3-3Zr20Presence13.1Example 3-4Nb20Presence12.6Example 3-5Mo20Presence12.0Example 3-6Rh20Presence11.1Example 3-7Ta20Presence13.6Example 3-8W20Presence13.1Example 3-9Re20Presence12.0Example 3-10Os20Presence11.7Example 3 -11Ir20Presence10.9 From the results in Table 3, it was confirmed that, by providing the first CoFeB layer91between the first Ru alloy layer30and the first ferromagnetic layer40, the MR ratio is improved. The reason why this MR ratio is improved is considered that, by interposing the first CoFeB layer91between the first Ru alloy layer30and the first ferromagnetic layer40, atomic mutual diffusion between the first Ru alloy layer30and the first ferromagnetic layer40is inhibited. Examples 4-1 to 11 The magnetoresistance effect element103was manufactured in the same manner as in Examples 3-1 to 11 except that the second Ru alloy layer70(having a thickness of 3 nm) was provided on the side of the second ferromagnetic layer60(cap layer80side) opposite to the non-magnetic metal layer50side, and that the second CoFeB layer92(having a thickness of 1 nm) was disposed between the second Ru alloy layer70and the second ferromagnetic layer60, and its MR ratio was measured. The second Ru alloy layer70was formed in the same manner as the first Ru alloy layer30, and the second CoFeB layer92was formed in the same manner as the first CoFeB layer91. The results are shown in Table 4 below. TABLE 4First Ru alloy layerSecond Ru alloy layerAmount of XAmount of XType of Xelement inFirstFirstNon-SecondSecondType of Xelement inMRelement inRuX alloylayerlayerlayerlayerlayerelement inRuX alloyratioRuX alloy(atm%)CoFeBferromagneticmagneticferromagneticCoFeBRuX alloy(atm%)(%)Example 4-1B20PresenceCo2MnGeAgCo2MnGePresenceB2017.8Example 4-2Ti20PresencePresenceTi2017.6Example 4-3Zr20PresencePresenceZr2018.5Example 4-4Nb20PresencePresenceNb2018.0Example 4-5Mo20PresencePresenceMo2017.2Example 4-6Rh20PresencePresenceRh2016.2Example 4-7Ta20PresencePresenceTa2019.0Example 4-8W20PresencePresenceW2018.5Example 4-9Re20PresencePresenceRe2017.3Example 4-10Os20PresencePresenceOs2017.1Example 4-11Ir20PresencePresenceIr2016.1 From the results in Table 4, it was confirmed that the MR ratio is improved by providing the second Ru alloy layer70and disposing the second CoFeB layer92between the second Ru alloy layer70and the second ferromagnetic layer60. The reason why this MR ratio is improved is considered that, by providing the second Ru alloy layer70, mutual atomic diffusion between the second ferromagnetic layer60and the cap layer80is inhibited, and by interposing the second CoFeB layer92between the second ferromagnetic layer60and the second Ru alloy layer70, the mutual atomic diffusion between the second ferromagnetic layer60and the second Ru alloy layer70is inhibited. Examples 5-1 to 11 The magnetoresistance effect element104was manufactured in the same manner as in Examples 1-8, 13, 23, 28, 33, 38, 58, 63, 68, 73, and 78 except that the first Ru alloy layer30is a laminate having a two-layered structure in which compositions differ in the laminating direction, the element content of the lower first Ru alloy layer31(having a thickness of 3 nm) is 10 atm %, and the element content of the upper first Ru alloy layer32(having a thickness of 2 nm) is set to 30 atm %, and its MR ratio was measured. The results are shown in Table 5 below. TABLE 5First Ru alloy layerAmount of X element in RuX alloyType of X(atm %)RuX alloyLower first RuUpper first RuFirst ferromagneticSecond ferromagneticMR ratioelement inalloy layeralloy layerlayerNon-magnetic layerlayer(%)Example 5-1B1030Co2MnGeAgCo2MnGe13.6Example 5-2Ti103013.4Example 5-3Zr103014.1Example 5-4Nb103013.5Example 5-5Mo103013.7Example 5-6Rh103012.8Example 5-7Ta103014.3Example 5-8W103014.0Example 5-9Re103012.6Example 5-10Os103012.8Example 5-11Ir103012.1 From the results in Table 5, it was confirmed that the MR ratio is improved by increasing the amount of the X element in the upper first Ru alloy layer32on the first ferromagnetic layer40side. The reason why this MR ratio is improved is considered that, by increasing the amount of the X element in the upper first Ru alloy layer32, the lattice mismatch between the first Ru alloy layer30and the first ferromagnetic layer40decreases. Examples 6-1 to 11 The magnetoresistance effect element105was manufactured in the same manner as in Examples 4-1 to 11 except that the first Ru alloy layer30is a laminate having a two-layered structure in which compositions differ in the laminating direction, the element amount of the lower first Ru alloy layer31(thickness 3 nm) was set to 10 atm %, and the element amount of the upper first Ru alloy layer32(thickness 2 nm) was set to 30 atm %, and that the second Ru alloy layer70is a laminate having a two-layered structure in which compositions differ in the laminating direction, the element content of the lower second Ru alloy layer71(having a thickness of 2 nm) was set to 30 atm %, and the element content of the upper second Ru alloy layer72(having a thickness of 3 nm) was set to 10 atm %, and its MR ratio was measured. The results are shown in Table 6 below. TABLE 6First Ru alloy layerAmount of XSecond Ru alloy layerelement in RuXAmount of X elementType ofalloy (atm %)Type ofin RuX alloy (atm %)XLower-Upper-XLowerUpper-elementfirst Rufirst RuFirstFirstNon-SecondSecondelementsecondsecondMRin RuXalloyalloyCoFeBferromagneticmagneticferromagneticCoFeBin RuXRu alloyRu alloy(%)alloylayerlayerlayerlayerlayerlayerlayeralloylayerlayerratioExample 6-1B1030PresenceCoMnGeAgCoMnGePresenceB301024.0Example 6-2Ti1030PresencePresenceTi301023.6Example 6-3Zr1030PresencePresenceZr301024.8Example 6-4Nb1030PresencePresenceNb301024.3Example 6-5Mo1030PresencePresenceMo301023.6Example 6-6Rh1030PresencePresenceRh301022.0Example 6-7Ta1030PresencePresenceTa301024.6Example 6-8W1030PresencePresenceW301024.3Example 6-9Re1030PresencePresenceRe301023.1Example 6-10Os1030PresencePresenceOs301022.7Example 6-11Ir1030PresencePresenceIr301021.8 From the results in Table 6, it was confirmed that the first CoFeB layer91is disposed between the first Ru alloy layer30and the first ferromagnetic layer40, the second Ru alloy layer70is provided, the second CoFeB layer92is disposed between the second Ru alloy layer70and the second ferromagnetic layer60, the first Ru alloy layer30increases the amount of the X element in the upper first Ru alloy layer32on the first ferromagnetic layer40side, and the second Ru alloy layer70increases the amount of the X element in the lower second Ru alloy layer71on the second ferromagnetic layer60side, and thus the MR ratio is further improved. While preferred embodiments of the invention have been described and illustrated above, it should be understood that these are exemplary of the invention and are not to be considered as limiting. Additions, omissions, substitutions, and other modifications can be made without departing from the spirit or scope of the present invention. Accordingly, the invention is not to be considered as being limited by the foregoing description, and is only limited by the scope of the appended claims. EXPLANATION OF REFERENCES 10Substrate20Underlayer21First underlayer22Second underlayer30First Ru alloy layer31Lower first Ru alloy layer32Upper first Ru alloy layer40First ferromagnetic layer50Non-magnetic metal layer60Second ferromagnetic layer70Second Ru alloy layer71Lower second Ru alloy layer72Upper second Ru alloy layer80Cap layer91First CoFeB layer92Second CoFeB layer101,102,103,104,105Magnetoresistance effect element201,202,203Magnetic recording element204Domain wall motion element205High-frequency device220Resistance measuring instrument230Power supply240Measuring unit251First magnetization pinned layer252Second magnetization pinned layer260Direct current power supply261Inductor262Capacitor263Output port264Wiring265Wiring | 61,935 |
11944019 | DETAILED DESCRIPTION The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a second feature over or on a first feature in the description that follows may include embodiments in which the second and first features are formed in direct contact, and may also include embodiments in which additional features may be formed between the second and first features, such that the second and first features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. Further, spatially relative terms, such as “beneath”, “below”, “lower”, “on”, “over”, “overlying”, “above”, “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly. Embodiments will be described with respect to a specific context, namely, a memory device, such as a phase-change random access memory (PCRAM) device, and a method of forming the same. In the disclosure, a moisture-resistant layer or an oxygen-trapping layer is provided adjacent to a selector layer, so as to improve the film quality of the selector layer and therefore the electrical performance of the memory device. FIG.1toFIG.7illustrate schematic cross-sectional views of intermediate stages in the manufacturing of a memory device in accordance with some embodiments of the present disclosure. In some embodiments, a substrate101is provided. The substrate101may include, bulk silicon, doped or undoped, or an active layer of a semiconductor-on-insulator (SOI) substrate. Generally, an SOI substrate includes a layer of a semiconductor material, such as silicon, formed on an insulator layer. The insulator layer may be, for example, a buried oxide (BOX) layer or a silicon oxide layer. The insulator layer is provided on a substrate, such as a silicon or glass substrate. Alternatively, the substrate101may include another elementary semiconductor, such as germanium; a compound semiconductor including silicon carbide, gallium arsenic, gallium phosphide, indium phosphide, indium arsenide, and/or indium antimonide; an alloy semiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP; or a combination thereof. Other substrates, such as multi-layered or gradient substrates, may also be used. In some embodiments, an access transistor103is formed over the substrate101. The access transistor103includes a gate stack containing a gate dielectric layer105and a gate electrode107, spacers109on opposite sidewalls of the gate stack, and source/drain regions111adjacent to the respective spacers109. For simplicity, components that are commonly formed in integrated circuits, such as a gate silicide, source/drain silicides, a contact etch stop layer, and the like, are not illustrated. In some embodiments, the access transistor103may be formed using any suitable method. In some embodiments, the access transistor103may be a planar MOSFET device, a FinFET device, a tunnel FET (“TFET”) device, a gate-all-around (“GAA”) device or a suitable device depending on PCRAM circuitry design. In some embodiments, additional active and/or passive devices may be formed on the substrate101. The one or more active and/or passive devices may include transistors, capacitors, resistors, diodes, photo-diodes, fuses, or the like. The one or more active and/or passive devices may be formed using any suitable method. One of ordinary skill in the art will appreciate that the above examples are provided for the purpose of illustration only and are not meant to limit the present disclosure in any manner. Other circuitry may be also used as appropriate for a given application. In some embodiments, an interconnect structure113is formed over the access transistor103and the substrate101. The interconnect structure113may include one or more metallization layers1150to115M, wherein M+1 is the number of the one or more metallization layers1150to115M. In some embodiments, the value of M may vary according to design specifications. In some embodiments, the metallization layer115Mmay be an intermediate metallization layer of the interconnect structure113. In such embodiments, further metallization layers are formed over the metallization layer115M. In some embodiments, M is equal to 1. In other embodiments, M is greater than 1. In some embodiments, the one or more metallization layers1150to115M, include one or more dielectric layers1170to117M, respectively. The dielectric layer1170is an inter-layer dielectric (ILD) layer, and the dielectric layers1171to117Mare inter-metal dielectric (IMD) layers. Each of the ILD layer and the IMD layers may include a low-k dielectric material having a dielectric constant lower than about 4.0, 3.0, 2.0 or even 1.5. In some embodiments, each of the ILD layer and IMD layers may include a material such as silicon oxide, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), fluorosilicate glass (FSG), SiOC, Spin-On-Glass, Spin-On-Polymer, a silicon carbon material, a compound thereof, a composite thereof, a combination thereof, or the like, formed by any suitable method, such as spin-on coating, chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), atomic layer deposition (ALD), the like, or a combination thereof. In some embodiments, etch stop layers (ESLs)1231to123Mare formed between adjacent ones of the dielectric layers1170to117M. The material for the ESLs1231to123Mis chosen such that etch rates of the ESLs1231to123Mare less then etch rates of corresponding ones of the dielectric layers1171to117M. In some embodiments, an etching process that etches the dielectric layers1171to117Mfaster than the ESLs1231to123Mis a dry etching process performed using an etchant comprising a CxFy-based gas, or the like. In some embodiments, an etch rate of the ESL123Kis less than an etch rate of the dielectric layer117K(with K=1, . . . , M). In some embodiments, each of the ESLs1231to123Mmay include one or more layers of dielectric materials. Suitable dielectric materials may include oxides (such as silicon oxide, aluminum oxide, or the like), nitrides (such as SiN, or the like), oxynitrides (such as SiON, or the like), oxycarbides (such as SiOC, or the like), carbonitrides (such as SiCN, or the like), carbides (such as SiC, or the like), combinations thereof, or the like, and may be formed using spin-on coating, CVD, PECVD, ALD, the like, or a combination thereof. In some embodiments, the metallization layer1150further includes conductive plugs1210within the dielectric layer1170, and the metallization layers1151to115Mfurther include one or more conductive interconnects, such as conductive lines1191to119Mand conductive vias1211to121M, within the dielectric layers1171to117M, respectively. The conductive plugs1210electrically couple the source/drain regions111and the gate electrode107of the access transistor103to the conductive lines1191to119Mand the conductive vias1211to121M. In some embodiments, the conductive plugs1210, the conductive lines1191to119Mand the conductive vias1211to121Mmay be formed using any suitable method, such as a damascene method, a dual damascene method, or the like. In some embodiments, the method for forming the conductive plugs1210, the conductive lines1191to119Mand the conductive vias1211to121Mincludes forming openings in the respective dielectric layers1170to117M, depositing one or more barrier/adhesion layers (not explicitly shown) in the openings, depositing seed layers (not explicitly shown) over the one or more barrier/adhesion layers, and filling the openings with a conductive material (not explicitly shown). A chemical mechanical polishing (CMP) is then performed to remove excess materials of the one or more barrier/adhesion layers, the seed layers, and the conductive material overfilling the openings. In some embodiments, the topmost surfaces of the conductive plugs1210are substantially coplanar or level with the topmost surface of the dielectric layer1170within process variations of the CMP process. In some embodiments, the topmost surfaces of the conductive lines1191to119Mare substantially coplanar or level with the topmost surfaces of the dielectric layers1171to117M, respectively, within process variations of the CMP process. In some embodiments, the one or more barrier/adhesion layers may include Ti, TiN, Ta, TaN, a combination thereof, a multilayer thereof, or the like, and may be formed using physical vapor deposition (PVD), CVD, ALD, the like, or a combination thereof. The seed layers may include copper, titanium, nickel, gold, manganese, and tungsten (W) a combination thereof, a multilayer thereof, or the like, and may be formed by ALD, CVD, PVD, sputtering, the like, or a combination thereof. The conductive material may include copper, aluminum, tungsten, a combination thereof, an alloy thereof, a multilayer thereof, or the like, and may be formed using plating, or any suitable method. Referring toFIG.2, a dielectric layer125is formed over the metallization layer115M. In some embodiments, the dielectric layer125may be formed using the similar material and method as the dielectric layers1170to117Mand the description is not repeated herein. In some embodiments, the dielectric layer125is patterned to form an opening127in the dielectric layer125. The patterning process may include suitable photolithography and etching processes. In some embodiments, the opening127exposes underlying conductive line119M. In some embodiments, the opening127has a substantially vertical sidewall, and the top width is substantially equal to the bottom width, as shown inFIG.2. However, the disclosure is not limited thereto. In other embodiments, the opening127has an inclined sidewall, and the top width is wider than the bottom width. Referring toFIG.3, a bottom electrode layer204is formed in the opening127. In some embodiments, a barrier layer202is optionally formed between the bottom electrode layer204and the dielectric layer125and between the bottom electrode layer204and the conductive line119M. In some embodiments, the bottom electrode layer204may include a conductive material such as Ti, Co, W, Ru, Cu, AlCu, WN, TiN, TiW, TiAl, TiAlN, a combination thereof, a multilayer thereof, or like, and may be formed using CVD, ALD, PVD, the like, or a combination thereof. In some embodiments, the barrier layer202includes a material to prevent the bottom electrode layer204from diffusing to the underlying layers. In some embodiments, the barrier layer202may include Ti, TiN, Ta, TaN, a combination thereof, a multilayer thereof, or the like, and may be formed using CVD, ALD, PVD, the like, or a combination thereof. In some embodiments, the bottom electrode layer204includes TiN, and the barrier layer202includes TaN. In some embodiments, the bottom electrode layer204includes W, and the barrier layer202is optionally omitted. In some embodiments, a barrier material layer and a bottom electrode material layer are deposited in the opening127and overfills the opening127. In some embodiments, a planarization process, such as a CMP process, an etching process, a grinding process, a combination thereof, or the like, is performed on the barrier material layer and the bottom electrode material layer, so as to remove excess portions of the barrier material layer and the bottom electrode material layer overfilling the opening127. In some embodiments, the topmost surfaces of the barrier layer202and the bottom electrode layer204are substantially coplanar or level with the topmost surface of the dielectric layer125within process variations of the planarization process. Referring toFIG.4, a phase change material layer206is blanket deposited over the bottom electrode layer204and the dielectric layer125. The phase change material layer206may include a chalcogenide material containing one or more of Ge, Te and Sb. In some embodiments, the phase change material layer206includes GeSbTe, such as Ge2Sb2Tes5(GST225), Ge4Sb2Te4(GST424) or so forth. In certain cases, the chalcogenide material may be doped with N, Si, C, In, Ga or the like, and an example of such chalcogenide material may be doped Ge6Sb1Te2(GST612). In other embodiments, the phase change material layer206includes ScSbTe, GeTe, InSb, Sb2Te3, Sb70Te30, GaSb, InSbTe, GaSeTe, SnSbTe4, InSbGe, AgInSbTe, Te81Ge15Sb2S2, (Ge,Sn)SbTe, GeSb(SeTe) or the like. The phase change material layer206may be formed using ALD, CVD, PECVD, the like, or a combination thereof. Thereafter, an intermediate material layer208is blanket deposited over the phase change material layer206. In some embodiments, the intermediate material layer208is configured to increase the adhesion between the underlying phase change material layer206and the overlying selector layer. The intermediate material layer208is referred to an “adhesion layer” in some examples. The intermediate material layer208may include TaN, TiN, C, Ru, TaS2, MoS2, a combination thereof, a multilayer thereof, or like, and may be formed using CVD, ALD, PVD, the like, or a combination thereof. Still referring toFIG.4, a moisture-resistant material layer210, a selector material layer212and a moisture-resistant material layer214are sequentially formed on the intermediate material layer208. In some embodiments, the moisture-resistant material layer210and the moisture-resistant material layer214are configured to prevent water or moisture from entering the device and therefore avoid oxidization of the selector material layer212and degradation of the film quality. In some embodiments, the moisture-resistant material layer210and the moisture-resistant material layer214are configured to trap oxygen therein and therefore resist oxidation of the selector material layer212. Each of the moisture-resistant material layer210and the moisture-resistant material layer214is referred to an “oxygen trapping layer” or “oxygen resistant layer” in some examples. In some embodiments, the method of forming the moisture-resistant material layer210, the selector material layer212and the moisture-resistant material layer214includes performing a physical vapor deposition (PVD) process. In some embodiments, the moisture-resistant material layer210, the selector material layer212and the moisture-resistant material layer214are formed in the same process chamber, such as a sputter chamber. In some embodiments, the chamber temperature ranges from about 25° C. to 350° C., and the process pressure ranges from 10−8torr to 10−5torr. In some embodiments, the same sputtering targets are adopted when the moisture-resistant material layer210, the selector material layer212and the moisture-resistant material layer214are formed in the same chamber. In some embodiments, a nitrogen-containing gas is introduced into the sputtering chamber when the selector material layer212is formed but is turned off when the moisture-resistant material layer210and the moisture-resistant material layer214are formed in the same chamber. Specifically, the nitrogen-containing gas is turned off for a first time period of forming the moisture-resistant material layer210, then turned on for a second time period of time of forming the selector material layer212, and then turned off for a third time period of forming the moisture-resistant material layer214. The nitrogen-containing gas includes N2. In some embodiments, the nitrogen-containing gas is a pure nitrogen gas. In alternative embodiments, the nitrogen-containing gas may be diluted with an inert gas such as, for example, argon (Ar), helium (He), neon (Ne), or a mixture thereof, the content of nitrogen within the nitrogen-containing ambient employed in the present disclosure is typically from 50% to 100%. In some embodiments, the nitrogen-containing gas is in a flow rate of about 1-20 sccm, such as 5-10 sccm. In some embodiments, each of the moisture-resistant material layer210, the selector material layer22and the moisture-resistant material layer214includes an Ovonic Threshold Switch (OTS) based material that is used to provide current to a cross point memory array. In some embodiments, each of the moisture-resistant material layers210and214includes GeCTe, CTe, GeSe, BCTe, SiGeCTe, SiCTe, the like, or a combination thereof. In some embodiments, the selector layer includes NGeCTe, NSiGeCTe, NSiCTe, NSeGeCTe, NSiSeCTe, NSeCTe, NBCTe, NSiBCTe, NGeBCTe, the like, or a combination thereof. In some embodiments, each of the moisture-resistant material layer210, the selector material layer222and the moisture-resistant material layer214are formed in an amorphous state. However, the present disclosure is not limited thereto. In other embodiments, each of the moisture-resistant material layer210and the moisture-resistant material layer214are formed in an amorphous state, while the selector material layer222are formed in a crystalline state or a mixed crystalline-amorphous state. In some embodiments, multiple sputtering targets are provided, and each of the metal targets includes at least one of Ge, Te, Se, B, C and Si. For examples, when each of the moisture-resistant material layers210and214includes GeCTe and the selector layer212includes NGeCT, the sputtering targets include a TeC target and a Ge target. For examples, when each of the moisture-resistant material layers210and214includes GeSe and the selector layer212includes NGeSe, the sputtering targets include a Te target and a Ge target. For examples, when each of the moisture-resistant material layers210and214includes SiGeCTe and the selector layer includes NSiGeCTe, the sputtering targets include a GeSi target and a TeC target. Other sputtering targets may be used in other embodiments. In some embodiments, the moisture-resistant material layer210and the moisture-resistant material layer214are described as part of selector layer. For example, the selector layer of the disclosure is described as a sandwich selector structure having two moisture-resistant materials and one selector material inserted therebetween. In some embodiments, the lower moisture-resistant material layer210and the upper moisture-resistant material layer214may include the same material. In other embodiments, the lower moisture-resistant material layer210and the upper moisture-resistant material layer214may include different materials. In the present disclosure, oxygen is trapped in the lower moisture-resistant material layer210when it enters from the bottom of the selector material layer212, and oxygen is trapped in the upper moisture-resistant material layer214when it enters from the top of the selector material layer212. The lower moisture-resistant material layer210and the upper moisture-resistant material layer214may be designed to have the same thickness or different thickness depend on the customer requirements. Thereafter, a top electrode material layer216is blanket deposited over the moisture-resistant material layer214. In some embodiments, the top electrode material layer216may include a conductive material such as Ti, Co, W, Ru, Cu, AlCu, WN, TiN, TiW, TiAl, TiAlN, a combination thereof, a multilayer thereof, or like, and may be formed using CVD, ALD, PVD, the like, or a combination thereof. In some embodiments, the top electrode material layer216includes TiN. In some embodiments, the top electrode material layer216includes W. In some embodiments, the bottom electrode layer204and the top electrode material layer216may include the same material. In other embodiments, the bottom electrode layer204and the top electrode material layer216may include different materials. Afterwards, a mask layer HM is formed over the top electrode material layer216. In some embodiments, the mask layer HM may include a photoresist material and may be formed using a photolithography process. In other embodiments, the mask layer HM may include a dielectric material such as silicon oxide, silicon nitride, silicon carbide, a combination thereof, a multilayer thereof, or the like, and may be formed using a deposition process followed by photolithography and etching processes. Referring toFIG.5, the phase change material layer206, the intermediate material layer208, the moisture-resistant material layer210, the selector material layer212, the moisture-resistant material layer214and the top electrode material layer216are patterned by using the mask layer HM as a mask, so as to form a phase change layer216, an intermediate layer218, a moisture-resistant layer220, a selector layer222, a moisture-resistant layer224and a top electrode layer226sequentially disposed on the bottom electrode layer204. In some embodiments, the patterning process includes performing at least one anisotropic etching process, such as a dry etching process. After the patterning process, the mask layer HM is then removed. The memory stack MS1of the disclosure is thus completed. The memory stack MS1may have a PCRAM structure. In some embodiments, the bottom electrode layer204, the phase change layer216, the intermediate layer218, the moisture-resistant layer220, the selector layer222, the moisture-resistant layer224and the top electrode layer226constitute the memory stack MS1. Referring toFIG.6, a dielectric layer228is formed over the dielectric layer125and aside the memory stack MS1. In some embodiments, the dielectric layer228may be formed using the similar material and method as the dielectric layers1170to117M. The dielectric layer228may include a low-k dielectric material having a dielectric constant lower than about 4.0, 3.0, 2.0 or even 1.5. In some embodiments, the dielectric layer228may include a material such as silicon oxide, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), HDP (high density plasma) oxide, TEOS (tetraethylorthosilicate), SiOC, SiC, a combination thereof, a multilayer thereof, or the like. In some embodiments, the dielectric layer228may prevent the moisture from contacting the phase change layer216aand degrading the performance of the device. The method of forming the dielectric layer228may include performing a CVD process such as a low pressure chemical vapor deposition (LPCVD) process or a plasma enhanced chemical vapor deposition (PECVD) process, and then planarizing the excess portion of the dielectric layer over the top electrode layer226by using a planarizing method, e.g., a CMP process, an etching process, a grinding process, the like, or a combination thereof. In some embodiments, the topmost surface of the top electrode layer226is substantially coplanar or level with the topmost surface of the dielectric layer228within process variations of the planarization process. Referring toFIG.7, additional metallization layers115M+1to115M+Nare formed over the dielectric layer228, with the metallization layer115M+Nbeing the last metallization layer of the interconnect structure113. In some embodiments, the conductive via121M+1is in physical contact with the top electrode layer226of the memory stack MS1. In some embodiments, the dielectric layers117M+X(with X=1, . . . , N) may be formed using similar materials and methods as the dielectric layers1170to117Mdescribed above with reference toFIG.1, and the description is not repeated herein. In some embodiments, the ESLs123M+X(with X=1, . . . , N) may be formed using similar materials and methods as the ESLs1231to123Mdescribed above with reference toFIG.1, and the description is not repeated herein. In some embodiments, the conductive lines119M+X(with X=1, . . . , N) may be formed using similar materials and methods as the conductive lines1191to119Mdescribed above with reference toFIG.1, and the description is not repeated herein. In some embodiments, the conductive vias121M+X(with X=1, . . . , N) may be formed using similar materials and methods as the conductive vias1211to121Mdescribed above with reference toFIG.1, and the description is not repeated herein. In some embodiments, N is equal to 1. In other embodiments, N is greater than 1. In some embodiments, a memory device10of the disclosure is thus completed. The above embodiments in which the memory stack MS1is provided between the fourth conductive line and the fifth conductive line are provided for illustration purposes, and are not construed as limiting the present disclosure. In other embodiments, upon the process requirements, the memory stack MS1may be provided between two adjacent conductive lines, such as between the first conductive line and the second conductive line, between the second conductive line and the third conductive line, between the third conductive line and the fourth conductive line or between the fifth conductive line and the sixth conductive line, etc. Besides, the memory stack MS1may be embedded in any one of the conductive lines of the interconnect structure113; that is, the memory stack MS1is at substantially the same level with the selected conductive line of the interconnect structure113. The memory stack MS1in the memory device10may be modified to have other configurations, as shown inFIG.8toFIG.10. Each of the memory stacks MS2to MS4ofFIG.8toFIG.10may be similar to the memory stack MS1ofFIG.7, with similar features of the memory stacks being labeled with similar numerical references and descriptions of the similar features are not repeated herein. The memory stack MS2ofFIG.8may be similar to the memory stack MS1ofFIG.7, and the difference between them lies in that, the memory stack MS2further includes a blocking layer227between the dielectric layer228and each of the phase change layer216, the intermediate layer218, the moisture-resistant layer220, the selector layer222, the moisture-resistant layer224and the top electrode layer226. In some embodiments, the memory stack MS2may be formed using process steps described above with reference toFIG.1toFIG.7, but forming a blocking layer227after the formation of the memory stack MS1and before the formation of the dielectric layer228. The blocking layer227functions as a protection layer that effectively blocks water or moisture from penetrating into the selector layer222and the phase change layer216. The blocking layer227is referred to as a “humidity blocking layer”, “sidewall moisture-resistant layer” or “moisture-resistant spacer” in some examples. In some embodiments, the method of forming the blocking layer227includes forming a blocking material layer over the dielectric layer125and along sidewall of the memory stack. In some embodiments, the blocking material layer includes silicon nitride (Si3N4), silicon oxynitride, silicon carbide or the like, and is formed using a CVD process. Thereafter, an anisotropic etching process is performed to the blocking material layer, so as to form the blocking layer227in a spacer form. The memory stack MS3ofFIG.9may be similar to the memory stack MS1ofFIG.7, and the difference between them lies in that, the moisture-resistant layer220is provided for the memory stack MS1while omitted from the memory stack MS3. In some embodiments, the memory stack MS3may be formed using process steps described above with reference toFIG.1toFIG.7, but omitting the formation of the moisture-resistant layer220. In some embodiments, the blocking layer227as shown inFIG.8is optionally provided for the memory stack MS3ofFIG.9. The memory stack MS4ofFIG.10may be similar to the memory stack MS1ofFIG.7, and the difference between them lies in that, the moisture-resistant layer224is provided for the memory stack MS1while omitted from the memory stack MS4. In some embodiments, the memory stack MS4may be formed using process steps described above with reference toFIG.1toFIG.7, but omitting the formation of the moisture-resistant layer224. In some embodiments, the blocking layer227as shown inFIG.8is optionally provided for the memory stack MS4ofFIG.10. Besides, the positions of the phase change layer216and the selector layer222may be exchanged as needed, as long as the moisture-resistant layer220and the moisture-resistant layer224are configured to contact with the selector layer222and therefore protect the selector layer222from being oxidized by the moisture or air in the environment, as shown inFIG.11toFIG.14. Specifically, the memory stacks MS5-MS8ofFIG.11toFIG.14are similar to the memory stacks MS1-MS4ofFIG.7toFIG.10, and the difference between them lies in the forming sequence of the phase change layer216and the selector layer222. Specifically, in the memory stacks MS5-MS8ofFIG.11toFIG.14, the selector layer222is formed before the formation of the phase change layer216. Specifically, the selector layer222is formed close to the bottom electrode layer204, and the phase change layer216is formed away from the bottom electrode layer204. In some embodiments, the moisture-resistant layer220is in physical contact with the bottom electrode layer204. FIG.15toFIG.20illustrate schematic cross-sectional views of intermediate stages in the manufacturing of a memory device in accordance with other embodiments of the present disclosure.FIG.21illustrates a simplified top view of a memory device according to some embodiments of the present disclosure. In some embodiments,FIG.20shows a cross-sectional view of the memory device along a cut line I-I′ ofFIG.21, in which only few elements are shown for the purpose of simplicity and clarity. In some embodiments, the structure illustrated inFIG.15is similar to the structure illustrated inFIG.1, with similar features being labeled with similar numerical references and descriptions of the similar features are not repeated herein. Referring toFIG.16, a bottom electrode layer304is formed over the dielectric layer117Mand electrically connected to the conductive lines119M. The method of forming the bottom electrode layer304includes blanket depositing a bottom electrode material layer over the dielectric layer117Mand the dielectric layer117M. In some embodiments, the bottom electrode material layer includes a conductive material such as Ti, Co, W, Ru, Cu, AlCu, WN, TiN, TiW, TiAl, TiAlN, a combination thereof, a multilayer thereof, or like, and may be formed using CVD, ALD, PVD, the like, or a combination thereof. Thereafter, the bottom electrode material layer is patterned to form multiple bottom electrode layers304, arranged in parallel, along a first direction (e.g., X-direction, seeFIG.21). A dielectric layer (not shown) may be formed to fill the gaps between the bottom electrode layers. Referring toFIG.17, a phase change material layer306, an intermediate material layer308, a moisture-resistant material layer310, a selector material layer312, a moisture-resistant material layer314and a top electrode material layer316are sequentially formed on the bottom electrode layer304. In some embodiments, the phase change material layer306, the intermediate material layer308, the moisture-resistant material layer310, the selector material layer312, the moisture-resistant material layer314and the top electrode material layer316may be formed using the similar materials and methods as the phase change material layer206, the intermediate material layer208, the moisture-resistant material layer210, the selector material layer212, the moisture-resistant material layer214and the top electrode material layer216, and the description is not repeated herein. Thereafter, a mask layer HM is formed over the top electrode material layer316. In some embodiments, the mask layer HM may be formed using the similar material and method as the mask layer HM ofFIG.4, and the description is not repeated herein. Referring toFIG.18, the phase change material layer306, the intermediate material layer308, the moisture-resistant material layer310, the selector material layer312, the moisture-resistant material layer314and the top electrode material layer316are patterned by using the mask layer HM as a mask, so as to form a phase change layer316, an intermediate layer318, a moisture-resistant layer320, a selector layer322, a moisture-resistant layer324and a top electrode layer326sequentially disposed on the bottom electrode layer304. In some embodiments, the patterning process includes performing at least one anisotropic etching process, such as a dry etching process. After the patterning process, the mask layer HM is then removed. The memory stack MS9of the disclosure is thus completed. The memory stack MS9may have a PCRAM structure. In some embodiments, the bottom electrode layer304, the phase change layer316, the intermediate layer318, the moisture-resistant layer320, the selector layer322, the moisture-resistant layer324and the top electrode layer326constitute the memory stack MS9. In some embodiments, the top electrode material layer316is patterned to form multiple top electrode layers326, arranged in parallel, along a second direction (e.g., Y-direction, seeFIG.21) different from the first direction. Specifically, as shown in the top view ofFIG.21, each of the top electrode layers326may be intersected with (e.g., perpendicular to) the corresponding bottom electrode layers304. The phase change layer316, the intermediate layer318, the moisture-resistant layer320, the selector layer322and the moisture-resistant layer324are disposed between the bottom electrode layer304and the top electrode layers326. Specifically, the phase change layer316, the intermediate layer318, the moisture-resistant layer320, the selector layer322and the moisture-resistant layer324are disposed at the cross point of the corresponding bottom and top electrode layers304and326. Referring toFIG.19, a dielectric layer328is formed over the dielectric layer117Mand aside the memory stack MS9. In some embodiments, the dielectric layer328may be formed using the similar material and method as the dielectric layer228, and the description is not repeated herein. Referring toFIG.20, additional metallization layers115M+1to115M+Nare formed over the dielectric layer328, with the metallization layer115M+Nbeing the last metallization layer of the interconnect structure113. In some embodiments, the conductive via121M+1is in physical contact with the top electrode layer326of the memory stack MS9. In some embodiments, the metallization layers115M+1to115M+Nare formed using process steps described above with reference toFIG.7and the description is not repeated herein. In some embodiments, a memory device20of the disclosure is thus completed. The above embodiments in which the memory stack MS9is provided between the fourth conductive line and the fifth conductive line are provided for illustration purposes, and are not construed as limiting the present disclosure. In other embodiments, upon the process requirements, the memory stack MS9may be provided between two adjacent conductive lines, such as between the first conductive line and the second conductive line, between the second conductive line and the third conductive line, between the third conductive line and the fourth conductive line or between the fifth conductive line and the sixth conductive line, etc. Besides, the memory stack MS9may be embedded in any one of the conductive lines of the interconnect structure113; that is, the memory stack MS9is at substantially the same level with the selected conductive line of the interconnect structure113. The memory stack MS9in the memory device20may be modified to have other configurations, as shown inFIG.22toFIG.24. Each of the memory stacks MS10to MS12ofFIG.22toFIG.24may be similar to the memory stack MS9ofFIG.20, with similar features of the memory stacks being labeled with similar numerical references and descriptions of the similar features are not repeated herein. The memory stack MS10ofFIG.22may be similar to the memory stack MS9ofFIG.20, and the difference between them lies in that, the memory stack MS10further includes a blocking layer327between the dielectric layer328and each of the phase change layer316, the intermediate layer318, the moisture-resistant layer320, the selector layer322, the moisture-resistant layer324and the top electrode layer326. In some embodiments, the memory stack MS9may be formed using process steps described above with reference toFIG.15toFIG.20, but forming a blocking layer327after the formation of the memory stack MS9and before the formation of the dielectric layer328. The blocking layer327functions as a protection layer that effectively blocks water or moisture from penetrating into the selector layer322and the phase change layer316. The blocking layer327is referred to as a “humidity blocking layer”, “sidewall moisture-resistant layer” or “moisture-resistant spacer” in some examples. In some embodiments, the method of forming the blocking layer327includes forming a blocking material layer over the dielectric layer117Mand along sidewall of the memory stack. In some embodiments, the blocking material layer includes silicon nitride (Si3N4), silicon oxynitride, silicon carbide or the like, and is formed using a CVD process. Thereafter, an anisotropic etching process is performed to the blocking material layer, so as to form the blocking layer327in a spacer form. The memory stack MS11ofFIG.23may be similar to the memory stack MS9ofFIG.20, and the difference between them lies in that, the moisture-resistant layer320is provided for the memory stack MS9while omitted from the memory stack MS11. In some embodiments, the memory stack MS11may be formed using process steps described above with reference toFIG.15toFIG.20, but omitting the formation of the moisture-resistant layer320. In some embodiments, the blocking layer327as shown inFIG.22is optionally provided for the memory stack MS11ofFIG.23. The memory stack MS12ofFIG.24may be similar to the memory stack MS9ofFIG.20, and the difference between them lies in that, the moisture-resistant layer324is provided for the memory stack MS9while omitted from the memory stack MS12. In some embodiments, the memory stack MS12may be formed using process steps described above with reference toFIG.15toFIG.20, but omitting the formation of the moisture-resistant layer324. In some embodiments, the blocking layer327as shown inFIG.22is optionally provided for the memory stack MS12ofFIG.24. Besides, the positions of the phase change layer316and the selector layer322may be exchanged as needed, as long as the moisture-resistant layer320and the moisture-resistant layer324are configured to contact with the selector layer322and therefore protect the selector layer322from being oxidized by the moisture or air in the environment, as shown inFIG.25toFIG.28. Specifically, the memory stacks MS13-MS16ofFIG.25toFIG.28are similar to the memory stacks MS9-MS12ofFIG.20, andFIG.22toFIG.24, and the difference between them lies in the forming sequence of the phase change layer316and the selector layer322. Specifically, in the memory stacks MS13-MS16ofFIG.25toFIG.28, the selector layer322is formed before the formation of the phase change layer316. Specifically, the selector layer322is formed close to the bottom electrode layer304, and the phase change layer316is formed away from the bottom electrode layer304. In some embodiments, the moisture-resistant layer320is in physical contact with the bottom electrode layer304. The memory stacks of the disclosure and its modifications will be described below with reference to the cross-sectional views ofFIG.7toFIG.14andFIG.20toFIG.28. In accordance with some embodiments of the present disclosure, a memory device10/20includes a substrate101, a transistor103disposed over the substrate101, an interconnect structure113disposed over and electrically connected to the transistor103, and a memory stack disposed between two adjacent metallization layers of the interconnect structure113. In some embodiments, each of the memory stacks MS1-MS4and MS9-MS12includes a bottom electrode204/304disposed over the substrate101, a memory layer (e.g., phase change material layer216/316) disposed over the bottom electrode204/304, a selector layer222/322disposed over the memory layer, and a top electrode226/326disposed over the selector layer222/322. Besides, at least one moisture-resistant layer220/224/320/324is provided adjacent to and in physical contact with the selector layer222/322, and the at least one moisture-resistant layer220/224/320/324includes an amorphous material. In some embodiments, the bottom electrode204is electrically connected to a bit line, and the top electrode226is electrically connected to a word line. In some embodiments, the bottom electrode304serves a bit line extending in a first direction, and the top electrode326serves a word line extending in a second direction different from the first direction. In other embodiments, the arrangement of word line and bit line can be exchanged. For example, the bottom electrode is electrically connected to a word line, and the top electrode is electrically connected to a bit line. In some embodiments, the at least one moisture-resistant layer220/224/320/324includes GeCTe, CTe, GeSe, BCTe, SiGeCTe, SiCTe, or a combination thereof. In some embodiments, the selector layer222/322includes a composition of the at least one moisture-resistant layer and further includes a nitrogen element. For example, the selector layer222/322includes NGeCTe, NSiGeCTe, NSiCTe, NSeGeCTe, NSiSeCTe, NSeCTe, NBCTe, NSiBCTe, NGeBCTe, or a combination thereof. The at least one moisture-resistant layer traps the undesired oxygen atoms inside, so as to prevent the oxygen atoms from entering the selector layer222/322. In some embodiments, the at least one moisture-resistant layer220/224/320/324includes an oxygen concentration of about 5 at % or less, such as about 3 at % or less. In some embodiments, the selector layer222/322is an oxygen-free layer. In some embodiments, one of the at least one moisture-resistant layer (e.g.,224/324) is provided between the selector layer222/322and the top electrode226/326. In some embodiments, one of the at least one moisture-resistant layer (e.g.,220/320) is provided between the selector layer222/322and the memory layer (e.g., phase change layer216/326). In some embodiments, at least one humidity blocking layer227/327is provided on a sidewall of the selector layer222/322and a sidewall of the memory layer (e.g., phase change layer216/326). In some embodiments, a thickness ratio of the moisture-resistant layer220/224/320/324to the selector layer222/322ranges from about 1:3 to 1:10. In some embodiments, the thickness of the moisture-resistant layer220/224/320/324ranges from about 1 m, to 10 nm, and the thickness of the selector layer222/322ranges from about 10 nm to 30 nm. In some embodiments, in a certain cross-section, a width of the bottom electrode204is less than a width of the top electrode226. In some embodiments, in a certain cross-section a width of the bottom electrode304is greater than a width of the top electrode326. In some embodiments, the memory stack has a vertically straight sidewall. In other embodiments, the memory stack has a narrow-middle profile that is narrow in a middle portion thereof. For example, the phase change layer of the memory stack has a narrow-middle profile; that is, the middle portion is narrower than the top portion or the bottom portion of the phase change layer. By reducing the width of the phase change layer, the heating of the phase change layer is centralized and therefore the reset current is reduced. In accordance with some embodiments of the present disclosure, a memory device10/20includes a substrate101and a memory stack over the substrate101. In some embodiments, each of the memory stacks MS1-MS16includes a bottom electrode204/304disposed over the substrate101, a top electrode226/326disposed over the bottom electrode204/304, a selector structure and a memory layer (e.g., phase change layer216/326) provided between the bottom electrode204/304and the top electrode226/326. Besides, the selector structure includes a first material (e.g., selector layer222/322) and at least one second material (e.g., moisture-resistant layer220/224/320/324) in direct contact with each other, the first material is a nitrogen-containing layer, and the at least one second material is a nitrogen-free layer. In some embodiments, the first material includes NGeCTe, NSiGeCTe, NSiCTe, NSeGeCTe, NSiSeCTe, NSeCTe, NBCTe, NSiBCTe, NGeBCTe, or a combination thereof. In some embodiments, the at least one second material comprises GeCTe, CTe, GeSe, BCTe, SiGeCTe, SiCTe, or a combination thereof. In some embodiments, the second material (e.g., moisture-resistant layer224/324) is in contact with the top electrode226/326, as shown in the memory stacks MS1-MS4and MS9-MS12. In some embodiments, the second material (e.g., moisture-resistant layer224/324) is in contact with an intermediate layer218/328and the memory layer (e.g., phase change layer216/326), as shown in the memory stacks MS5-MS7and MS13-MS15. In some embodiments, the at least one second material includes a lower second material (moisture-resistant layer220/320) and an upper second material (e.g., moisture-resistant layer224/324), and the first material (e.g., selector layer222/322) is inserted between the lower second material and the upper second material. In some embodiments, a thickness of the upper second material is different from a thickness of the lower second material. In some embodiments, a thickness of the upper second material is substantially equal to a thickness of the lower second material. In some embodiments, the selector structure is disposed between the top electrode226/326and the memory layer (e.g., phase change layer216/326), as shown in the memory stacks MS1-MS4and MS9-MS12. However, the disclosure is not limited thereto. In some embodiments, the selector structure is disposed between the bottom electrode204/304and the memory layer (e.g., phase change layer216/326), as shown in the memory stacks MS5-MS8and MS13-MS16. FIG.29illustrates a method of forming a memory device in accordance with some embodiments. Although the method is illustrated and/or described as a series of acts or events, it will be appreciated that the method is not limited to the illustrated ordering or acts. Thus, in some embodiments, the acts may be carried out in different orders than illustrated, and/or may be carried out concurrently. Further, in some embodiments, the illustrated acts or events may be subdivided into multiple acts or events, which may be carried out at separate times or concurrently with other acts or sub-acts. In some embodiments, some illustrated acts or events may be omitted, and other un-illustrated acts or events may be included. At act400, a bottom electrode layer is formed over a substrate.FIG.2toFIG.3andFIG.16illustrate cross-sectional views corresponding to some embodiments of act400. At act402, a phase change material layer, a first amorphous material layer, a selector material layer, a second amorphous material layer, a top electrode material layer and a mask layer are sequentially formed over the bottom electrode layer, wherein the first amorphous material layer, the selector material layer and the second amorphous material layer are performed in the same sputtering chamber, and wherein a nitrogen-containing gas is introduced into the sputtering chamber when the selector material layer is formed but is turned off when the first amorphous material layer and the second amorphous material layer are formed.FIG.4andFIG.17illustrate cross-sectional views corresponding to some embodiments of act402. In some embodiments, the sputtering chamber is a physical vapor deposition (PVD) chamber. In some embodiments, the phase change material layer is formed in an amorphous state. However, the disclosure is not limited thereto. In other embodiments, the phase change material layer is in a crystalline state. In some embodiments, the formation of one of the first amorphous material layer and the second amorphous material layer may be omitted from act402. In some embodiments, the sequence of forming the phase change material layer and the selector material layer may be exchanged in act402. At act404, the phase change material layer, the first amorphous material layer, the selector material layer, the second amorphous material layer and the top electrode material layer are patterned by using the mask layer as a mask, so as to form a memory stack.FIG.5andFIG.18illustrate cross-sectional views corresponding to some embodiments of act404. At act406, a blocking layer is formed on a sidewall of the memory stack.FIG.8andFIG.22illustrate cross-sectional views corresponding to some embodiments of act406. The act406is optional and may be omitted as needed. At act408, a dielectric layer is formed to encapsulate the memory stack.FIG.6andFIG.19illustrate cross-sectional views corresponding to some embodiments of act408. In the disclosure, a moisture-resistant layer or an oxygen-trapping layer is provided adjacent to a selector layer, so as to improve the film quality of the selector layer and therefore the electrical performance of the memory device. The moisture-resistant layer of the disclosure is amorphous with high resistance, and is merely turned on at the active area (e.g., filament path) without concern of current spreading. Besides, the moisture-resistant layer of the disclosure is easy to integrate with the existing process and therefore provides efficient productivity. The queue time (Q-time) of the memory device with such moisture-resistant layer of the disclosure is at least two weeks or longer without undesired oxidation of the selector layer. In accordance with some embodiments of the present disclosure, a memory device includes a substrate, a transistor disposed over the substrate, an interconnect structure disposed over and electrically connected to the transistor, and a memory stack disposed between two adjacent metallization layers of the interconnect structure. The memory stack includes a bottom electrode disposed over the substrate and electrically connected to a bit line, a memory layer disposed over the bottom electrode, a selector layer disposed over the memory layer, and a top electrode disposed over the selector layer and electrically connected to a word line. Besides, at least one moisture-resistant layer is provided adjacent to and in physical contact with the selector layer, and the at least one moisture-resistant layer includes an amorphous material. In accordance with other embodiments of the present disclosure, a memory device includes a substrate, a transistor disposed over the substrate, an interconnect structure disposed over and electrically connected to the transistor, and a memory stack disposed between two adjacent metallization layers of the interconnect structure. The memory stack includes a bottom electrode disposed over the substrate and serving as a bit line extending in a first direction, a top electrode disposed over the bottom electrode and serving as a word line extending in a second direction different from the first direction, a selector structure and a memory layer provided between the bottom electrode and the top electrode. Besides, the selector structure includes a first material and at least one second material in direct contact with each other, the first material is a nitrogen-containing layer, and the at least one second material is a nitrogen-free layer. In accordance with yet other embodiments of the present disclosure, a memory device includes the following operations. A bottom electrode layer is formed over a substrate. A phase change material layer, a first amorphous material layer, a selector material layer, a second amorphous material layer, a top electrode material layer and a mask layer are sequentially formed over the bottom electrode layer, wherein the first amorphous material layer, the selector material layer and the second amorphous material layer are performed in the same sputtering chamber, and wherein a nitrogen-containing gas is introduced into the sputtering chamber when the selector material layer is formed but is turned off when the first amorphous material layer and the second amorphous material layer are formed. The phase change material layer, the first amorphous material layer, the selector material layer, the second amorphous material layer and the top electrode material layer are patterned by using the mask layer as a mask, so as to form a memory stack. The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. | 54,017 |
11944020 | DETAILED DESCRIPTION Introduction In various embodiments, certain two-terminal resistive switching devices are formed having a top electrode with an overlying titanium nitride (TiN) conductive cap. Etching of TiN is generally accomplished via a chemical etching process that uses boron trichloride (BCl3), chlorine (Cl), or some other suitable chlorine compound. Most two-terminal resistive switching devices have a top electrode (TE) that includes an active metal such as: silver, aluminum, nickel, gold, platinum, or the like, in a form such as: a metallic form, a metallic alloy form, a metallic compound form, or the like. In various embodiments, desired active metal properties of the TE can be diminished, altered, or damaged upon exposure to BCl3, Cl, Cl2, or another chlorine compound or derivative, used for the TiN etching process. In various embodiments, when pattern patterning and etching a two-terminal resistive switching device, the inventors use an etch stop layer to signal the end of a first (chlorine-based chemical) etching procedure that results in an etch partially through a series of layers and that stops before reaching an electrode of the two-terminal resistive switching device. Subsequently, the inventors use a second (physical) etching procedure to etch the remaining layers. In some embodiments, this two step process, thereby prevents the active metal of one or more electrodes of the two-terminal resistive switching device from being exposed to the chlorine-based chemicals. This first etching procedure can relatively quickly remove portions of the TiN cap layer with a chemical solution comprising BCl3, Cl, or the like, and terminate as soon as the etch stop layer is reached. The second etching procedure can employ, e.g., an argon (Ar) or hydrogen (H2) plasma in connection with a physical etch such as ion bombardment. In some embodiments, the second etching procedure is generally slower relative to the first etching procedure, but does not harm the active metal properties of the two-terminal resistive switching device. The inventors have considered a previous use of tungsten (W) as an etch stop layer. For example, another embodiment formed a two-terminal resistive switching device with a TiN cap layer and a tungsten etch stop layer. The inventors have discovered several advances or improvements over these embodiments, which are detailed herein. For example, the inventors propose herein an etch stop layer comprising aluminum based on advantages of aluminum that the inventors have recently discovered. For example, during manufacture, when the layers are deposited, the manufacturing tool (e.g., a physical vapor deposition tool) has a limited number of vacuum chambers to store those materials being deposited. Since one or more of the electrodes of the two-terminal resistive switching device can comprise aluminum, aluminum material may already be allocated to one of these chambers of the manufacturing tool. In effect, aluminum can have a dual purpose, serving as an electrode (e.g., top electrode “TE”) and the etch stop layer that signals the chemical etching procedure to stop. Advantageously, such reduces the number of chambers necessary, as deposition of an aluminum etch stop layer does not consume an additional chamber as would be the case if the etch stop layer comprised tungsten, tantalum nitride, or others. In some embodiments, reducing the number of materials employed in a fabrication process can reduce a likelihood of having to open the vacuum chambers of the physical vapor deposition tool to swap materials out during a fabrication process. Opening the vacuum chambers can break a vacuum seal maintained by the manufacturing tool and/or can unnecessarily expose the integrated circuit device being fabricated to oxidation agents, contaminants, or other undesired elements. This can result in added processing to remove oxidation material or other contaminants, require additional layers such as diffusion mitigation layers, among other steps, increasing the complexity and cost of the fabrication process. Thus, by using fewer materials, more processes can be conducted without opening the vacuum chambers, reducing complexity and cost of the fabrication process. Additionally, the inventors propose herein a buffer layer (e.g., TiN with a thickness of about 100-150 angstroms) that can be situated between the etch stop layer and the TE of the two-terminal resistive switching device. In a previous embodiment, the tungsten etch stop layer is adjacent to the TE, which potentially leads to certain difficulties. For example, etching potentially required better tolerances than is necessary when the buffer layer is used. EXAMPLE EMBODIMENTS Various aspects or features of this disclosure are described with reference to the drawings, wherein like reference numerals are used to refer to like elements throughout. In this specification, numerous specific details are set forth in order to provide a thorough understanding of this disclosure. It should be understood, however, that certain aspects of disclosure may be practiced without these specific details, or with other methods, components, materials, etc. In other instances, well-known structures and devices are shown in block diagram form to facilitate describing the subject disclosure. Referring initially toFIGS.1and2, two examples of a two-terminal resistive switching device (TTRSD) are depicted. The TTRSD can be a non-volatile device or a volatile device and can be a memory device as illustrated atFIG.1or a selector device as illustrated atFIG.2. Non-volatile resistive technology can relate to, e.g., a resistive-switching two-terminal memory cell. Resistive-switching two-terminal memory cells (also referred to as resistive-switching memory cells or resistive-switching memory), as utilized herein, comprise circuit components having conductive contacts (e.g., electrodes or terminals) with an active region between the two conductive contacts. The active region of the two-terminal memory device, in the context of resistive-switching memory, exhibits a plurality of stable or semi-stable resistive states, each resistive state having a distinct electrical resistance. Moreover, respective ones of the plurality of states can be formed or activated in response to a suitable electrical signal applied at the two conductive contacts. The suitable electrical signal can be a voltage value, a current value, a voltage or current polarity, or the like, or a suitable combination thereof. Examples of a non-volatile resistive switching two-terminal memory device, though not exhaustive, can include a resistive random access memory (RRAM), a phase change RAM (PCRAM) and a magnetic RAM (MRAM). The state of a TTRSD (whether volatile or non-volatile) is typically determined by electrical characteristics associated with the memory (e.g., conductance, resistance, etc.). For a filamentary TTRSD, these electrical characteristics can be affected by the degree to which a conductive filament is present/absent within the electrically resistive active region. For example, in response to external stimuli (e.g., a suitable voltage applied across the memory device), an electric field is created at or near one or more of the conductive contacts (e.g. active metal layers). This electric field can ionize particles of the conductive contacts and drive those ionized particles into the active region (e.g. interface layer104, select layer204, etc.), creating a conductive filament therein. In some embodiments, e.g.FIG.1, the active region typically can contain a large number of defect sites that trap particles of the conductive filament such that when the external stimuli are removed, the conductive filament remains in the active region. Hence, the device is in a low-resistive and/or high-conductance state in the absence of an external stimulus, and this state is non-volatile. Conversely, to return the memory device to a high-resistive and/or low-conductance state, different external stimuli are applied (e.g., a voltage with different magnitude or polarity, or both), which causes the particles trapped in the active region to drift toward the conductive contact source, breaking electrical continuity of the conductive filament. In other embodiments, e.g.FIG.2, the active region typically can contain a low number of defect sites, such that particles of a volatile conductive filament that migrate into the active region (e.g., select layer204) in response to a first external stimuli, can drift out of at least some of the defect sites within the active region in response to a reduction in magnitude of the first external stimuli (e.g., a second external stimuli smaller than the first external stimuli). With different words, the volatile conductive filament can become electrically discontinuous in response to the external stimuli dropping below a deformation magnitude (of the second external stimuli), which is equal to or less than a formation magnitude (of the first external stimuli). As an illustrative example, the volatile device reaches a low-resistive state in response to an activation voltage (or small range of voltages, such as +/− a few tenths of a volt), and returns to a high-resistive state in response to the activation voltage dropping below a deactivation voltage, less than the activation voltage. Composition of filamentary-based devices can vary per device, with different components selected to achieve desired characteristics (e.g., volatility/non-volatility, on/off current ratio, switching time, read time, memory durability, program/erase cycle, and so on). One example of a filamentary-based device can comprise: a conductive layer, e.g., metal, metal-alloy, metal-nitride (e.g., comprising TiN, TaN, TiW, or other suitable metal compounds), an optional interface layer (e.g., doped p-type (or n-type) silicon (Si) bearing layer (e.g., a p-type or n-type Si bearing layer, p-type or n-type polysilicon, p-type or n-type polycrystalline SiGe, etc.)), a resistive switching layer (RSL) and an active metal-containing layer capable of being ionized. Under suitable conditions, the active metal-containing layer can provide filament-forming ions to the RSL. In such embodiments, a conductive filament (e.g., formed by the ions provided to the RSL) can facilitate electrical conductivity through at least a subset of the RSL, and a resistance of the filament-based device can be determined, as one example, by a tunneling resistance between the filament and the conductive layer. A RSL (which can also be referred to in the art as a resistive switching media (RSM)) can comprise, e.g., an undoped amorphous Si layer, a semiconductor layer having intrinsic characteristics, a silicon nitride (e.g., SiN, Si3N4, SiNx, etc.), a Si sub-oxide (e.g., SiOxwherein x has a value between 0.1 and 2), a Si sub-nitride, a metal nitride, a non-stoichiometric silicon compound, and so forth. Other examples of materials suitable for the RSL could include SiXGeYOZ(where X, Y and Z are respective suitable positive numbers), a silicon oxide (e.g., SiON, where N is a suitable positive number), an undoped amorphous Si (a-Si), amorphous SiGe (a-SiGe), TaOB(where B is a suitable positive number), HfOC(where C is a suitable positive number), TiOD(where D is a suitable number), Al2OE(where E is a suitable positive number), a non-stoichiometric silicon compound and so forth, a nitride (e.g., AlN, SiN), or a suitable combination thereof. In various embodiments, the RSL includes a number of material voids or defects. In some embodiments, a RSL employed as part of a non-volatile memory device (non-volatile RSL) can include a relatively large number (e.g., compared to a volatile selector device) of material voids or defects to trap neutral metal particles (at least at low voltage) within the RSL, as introduced above. The large number of voids or defects can facilitate formation of a thick, stable structure of the neutral metal particles. In such a structure, these trapped particles can maintain the non-volatile memory device in a low resistance state in the absence of an external stimulus (e.g., electrical power), thereby achieving non-volatile operation. In other embodiments, a RSL employed for a volatile selector device (volatile RSL) can have very few material voids or defects. Because of the few particle-trapping voids/defects, a conductive filament formed in such an RSL can be quite thin, and unstable absent a suitably high external stimulus (e.g., an electric field, voltage, current, joule heating, or a suitable combination thereof). Moreover, the particles can be selected to have high surface energy, and good diffusivity within the RSL. This leads to a conductive filament that can form rapidly in response to a suitable stimulus, but also deform quite readily, e.g., in response to the external stimulus dropping below a deformation magnitude. Note that a volatile RSL and conductive filament for the selector device can have different electrical characteristics than a conductive filament and non-volatile RSL for the non-volatile memory device. For instance, the selector device RSL can have higher material electrical resistance, and can have higher on/off current ratio, among others. An active metal-containing layer for a filamentary-based memory cell can include, among others: silver (Ag), gold (Au), titanium (Ti), titanium nitride (TiN) or other suitable compounds of titanium, nickel (Ni), copper (Cu), aluminum (Al), chromium (Cr), tantalum (Ta), iron (Fe), manganese (Mn), tungsten (W), vanadium (V), cobalt (Co), platinum (Pt), hafnium (Hf), and palladium (Pd). Other suitable conductive materials, as well as compounds, nitrides, oxides, alloys, or combinations of the foregoing or similar materials can be employed for the active metal-containing layer in some aspects of the subject disclosure. Further, a non-stoichiometric compound, such as a non-stoichiometric metal oxide or metal nitride (e.g., AlOx, AlNx, CuOx, CuNx, AgOx, AgNx, and so forth, where x is a suitable positive number 0<x<2, which can have differing values for differing ones of the non-stoichiometric compounds) or other suitable metal compound can be employed for the active metal-containing layer, in at least one embodiment. In one or more embodiments, a disclosed filamentary resistive switching device can include an active metal layer comprising a metal nitride selected from the group consisting of: TiNx, TaNx, AlNx, CuNx, WNxand AgNx, where x is a positive number. In a further embodiment(s), the active metal layer can comprise a metal oxide selected from the group consisting of: TiOx, TaOx, AlOx, CuOx, WOxand AgOx. In yet another embodiment(s), the active metal layer can comprise a metal oxi-nitride selected from the group consisting of: TiOaNb, AlOaNb, CuOaNb, WOaNband AgOaNb, where a and b are positive numbers. The disclosed filamentary resistive switching device can further comprise a switching layer comprising a switching material selected from the group consisting of: SiOy, AlNy, TiOy, TaOy, AlOy, CuOy, TiNx, TiNy, TaNx, TaNy, SiOx, SiNy, AlNx, CuNx, CuNy, AgNx, AgNy, TiOx, TaOx, AlOx, CuOx, AgOx, and AgOy, where x and y are positive numbers, and y is larger than x. Various combinations of the above are envisioned and contemplated within the scope of embodiments of the present invention. In one example, a disclosed filamentary resistive switching device comprises a particle donor layer (e.g., the active metal-containing layer) comprising a metal compound and a resistive switching layer. In one alternative embodiment of this example, the particle donor layer can comprise a metal nitride: MNx, e.g., AgNx, TiNx, AlNx, etc., and the resistive switching layer can comprise a metal nitride: MNy, e.g., AgNy, TiNy, AlNy, and so forth, where y and x are positive numbers, and in some cases y is larger than x. In an alternative embodiment of this example, the particle donor layer can comprise a metal oxide: MOx, e.g., AgOx, TiOx, AlOx, etc., and the resistive switching layer can comprise a metal oxide: MOy, e.g., AgOy, TiOy, or the like, where y and x are positive numbers, and in some cases y is larger than x. In yet another alternative, the metal compound of the particle donor layer is a MNx(e.g., AgNx, TiNx, AlNx, etc.), and the resistive switching layer is selected from a group consisting essentially of MOy(e.g., AgOy, TiOy, AlOy, etc.) and SiOy, where x and y are typically non-stoichiometric values. As utilized herein, variables x, a, b, and so forth representative of values or ratios of one element with respect to another (or others) in a compound can have different values suitable for respective compounds, and are not intended to denote a same or similar value or ratio among the compounds. Details pertaining to additional embodiments of the subject disclosure similar to the foregoing example(s) can be found in the following U.S. patent applications that are licensed to the assignee of the present application for patent: U.S. application Ser. No. 11/875,541 filed Oct. 19, 2007, and Ser. No. 12/575,921 filed Oct. 8, 2009, and the others cited herein, each of which are incorporated by reference herein in their respective entireties and for all purposes. FIG.1depicts an example non-volatile two-terminal memory device100. Device100can include top electrode (TE)102and an active metal layer103as detailed herein. In some embodiments, TE102can be or can comprise active metal layer103. Device100can also include interface layer104that can be substantially similar to the RSL described herein. Device100can include bottom electrode106. In some embodiments, BE106can be formed on or overly substrate108. In some embodiments, intervening layers (not shown) such as a metal layer can be formed between BE106and substrate108. In some embodiments, BE106and potentially other portions of device100can be formed in front-end-of-line processing layers over substrate108and/or over one or more optional intervening layers. In some embodiments, BE106or potentially other portions of device100can be formed in back-end-of-line processing layers over substrate108and/or one or more intervening layers. In some embodiments, BE106or other portions of device100can be provided as part of another suitable integrated circuit fabrication process. Volatile resistive technology can operate according to similar principles as non-volatile resistive technology with certain notable distinctions. For example, in absence of the external stimuli, filament-forming particles driven into the active region (e.g., select layer204) of volatile devices typically retreat back to the conductive contact source. Hence, the change in the state of the device caused by the external stimuli does not remain after the external stimuli are removed. This distinction exists due in part to a difference in design of the active region or other portions of the device. For instance, while non-volatile resistive-switching two-terminal memory cells tend to have active regions with a high number of defect sites (to trap ionized particles), corresponding active regions of volatile resistive-switching devices have few or fewer defect sites to trap the filament-forming particles. As used herein, the terms “high”, “low”, “many”, and “few” or similar, when used in connection with a number of defect sites are intended to expressly define, distinguish, or relate to a threshold between volatile and non-volatile resistive-switching devices. For example, a non-volatile device can be said to have a high number of defect sites in the active region (e.g., interface layer104) because that number of defects sites is sufficient to maintain the conductive filament when the external stimuli that created the conductive filament are removed. Conversely, a volatile device can be said to have few defect sites in the active region because the existing number of defect sites is not sufficient to maintain the conductive filament when the external stimuli that created the conductive filament are removed. While volatile resistive-switching devices typically do not provide for long-term memory storage as do non-volatile memory, volatile resistive-switching devices can provide numerous benefits. As an example, volatile resistive-switching devices can be wired in series with non-volatile memory to, e.g., minimize leak current or improve sensing margin. Some details pertaining to such embodiments can be found in the following U.S. patent application assigned to the assignee of the present application for patent: U.S. application Ser. No. 14/588,185, filed Dec. 31, 2014, which is incorporated by reference herein in its entirety and for all purposes. As another example, volatile resistive-switching devices can operate to store memory (e.g., in a volatile manner) or perform logic operations, and can function in both bipolar and unipolar designs. As utilized herein, the selector device will generally have very high ratio of on current (e.g., when the selector device has low electrical resistance) to off current (e.g., when the selector device has high electrical resistance). This ratio of on current to off current is also referred to herein as an on/off current ratio. As an illustrative example, the selector device can be a FAST™ selector device under development by the current assignee of the present application for patent, although other selector devices can be employed consistent with one or more embodiments as well. A filamentary selector device can exhibit a first state (e.g., a first electrical resistance, or other suitable measurable characteristic) in the absence of a suitable external stimulus. The stimulus can have a threshold value or range of such values that induces the filamentary selector device to change from the first state to a second state while the stimulus is applied. In response to the stimulus falling below the threshold value (or threshold range of values) the filamentary selector device returns to the first state. In some disclosed embodiments, a filamentary based selector device can operate in a bipolar fashion, behaving differently in response to different polarity (or direction, energy flow, energy source orientation, etc.) external stimuli. As an illustrative example, in response to a first polarity stimulus exceeding a first threshold voltage (or set of voltages), the filamentary selector device can change to the second state from the first state. Moreover, in response to a second polarity stimulus exceeding a second threshold voltage(s), the filamentary selector device can change to a third state from the first state. In some embodiments, the third state can be substantially the same as the first state, having the same or similar measurably distinct characteristic (e.g., electrical conductivity, and so forth), having the same or similar magnitude of threshold stimulus (though of opposite polarity or direction), or the like. In other embodiments, the third state can be distinct from the second state, either in terms of the measurable characteristic (e.g., different electrically conductivity value in response to the reverse polarity as compared to the forward polarity) or in terms of threshold stimulus associated with transitioning out of the first state (e.g., a different magnitude of positive voltage required to transition to the second state, compared to a magnitude of negative voltage required to transition to the third state). In some embodiments, and by way of example, a disclosed filamentary based selector device can form a conductive path or filament through a relatively high resistive portion in response to a suitable external stimulus. The external stimulus can cause metallic particles within an active metal layer to migrate within (or ionize within) a RSL layer of the filamentary selector device. As mentioned above, the RSL can be selected to have relatively few physical defect locations for the volatile filamentary switching device, facilitating relatively good mobility of the metallic particles within the RSL. Accordingly, below an associated threshold stimulus (or narrow range of threshold values), the metallic particles can be dispersed within the RSL to prevent formation of a sufficient conductive path through the RSL to lower a high resistance associated with the first state. Above the threshold, the external stimulus maintains the metallic particles in sufficient formation to provide the conductive path, leading to relatively low resistance of the second state. An analogous mechanism can control operation of the third state in the bipolar context. For a non-volatile filamentary-based memory cell, an RSL can be selected to have sufficient physical defect sites therein so as to trap particles in place in the absence of a suitable external stimulus, mitigating particle mobility, such as drift or dispersion. In response to a suitable program voltage applied across the memory cell, a conductive path or a filament forms through the RSL. In particular, upon application of a programming bias voltage, metallic ions are generated from the active metal layer and migrate into the RSL layer. More specifically, metallic ions migrate to the voids or defect sites within the RSL layer. In some embodiments, upon removal of the bias voltage, the metallic ions become neutral metal particles and remain trapped in voids or defects of the RSL layer. When sufficient particles become trapped, a filament is formed and the memory cell switches from a relatively high resistive state, to a relatively low resistive state. More specifically, the trapped metal particles provide the conductive path or filament through the RSL layer, and the resistance is typically determined by a tunneling resistance through the RSL layer. In some resistive-switching devices, an erase process can be implemented to deform the conductive filament, at least in part, causing the memory cell to return to the high resistive state from the low resistive state. More specifically, upon application of an erase bias voltage, the metallic particles trapped in voids or defects of the RSL become mobile and migrate back towards the active metal layer. This change of state, in the context of memory, can be associated with respective states of a binary bit. For an array of multiple memory cells, a word(s), byte(s), page(s), block(s), etc., of memory cells can be programmed or erased to represent zeroes or ones of binary information, and by retaining those states over time in effect storing the binary information In various embodiments, multi-level information (e.g., multiple bits) may be stored in such memory cells. It should be appreciated that various embodiments herein may utilize a variety of memory cell technologies, having different physical properties. For instance, different resistive-switching memory cell technologies can have different discrete programmable resistances, different associated program/erase voltages, as well as other differentiating characteristics. For instance, various embodiments of the subject disclosure can employ a bipolar switching device that exhibits a first switching response (e.g., programming to one of a set of program states) to an electrical signal of a first polarity and a second switching response (e.g., erasing to an erase state) to the electrical signal having a second polarity. The bipolar switching device is contrasted, for instance, with a unipolar device that exhibits both the first switching response (e.g., programming) and the second switching response (e.g., erasing) in response to electrical signals having the same polarity and different magnitudes. Where no specific memory cell technology or program/erase voltage is specified for the various aspects and embodiments herein, it is intended that such aspects and embodiments incorporate any suitable memory cell technology and be operated by program/erase voltages appropriate to that technology, as would be known by one of ordinary skill in the art or made known to one of ordinary skill by way of the context provided herein. It should be appreciated further that where substituting a different memory cell technology would require circuit modifications that would be known to one of ordinary skill in the art, or changes to operating signal levels that would be known to one of such skill, embodiments comprising the substituted memory cell technology(ies) or signal level changes are considered within the scope of the subject disclosure. The inventors of the subject application are familiar with additional non-volatile, two-terminal memory structures in addition to resistive memory. For example, ferroelectric random access memory (RAM) is one example. Some others include magneto-resistive RAM, organic RAM, phase change RAM and conductive bridging RAM, and so on. Two-terminal memory technologies have differing advantages and disadvantages, and trade-offs between advantages and disadvantages are common. Though resistive-switching memory technology is referred to with many of the embodiments disclosed herein, other two-terminal memory technologies can be utilized for some of the disclosed embodiments, where suitable to one of ordinary skill in the art. With specific reference toFIG.2, example volatile two-terminal selector device200is depicted. Device200can comprise select layer204that can represent all or a portion of the active region detailed herein and can be sandwiched between two active metal layers, top active metal layer203and bottom active metal layer205and/or two electrodes, TE202and BE206. Metal layers203and205can respectively comprise the same materials or different materials depending on the implementation. In some embodiments, TE202can be or can comprise top active metal layer203. In some embodiments, BE206can be or can comprise bottom active metal layer206. In some embodiments, device200can optionally comprise substrate208, which can be substantially similar to substrate108detailed herein and, potentially, intervening layers, as detailed. It is understood that both devices100,200can serve as examples of a two-terminal resistive switching device such as TTRSD302illustrated inFIG.3and other figures herein. Turning now toFIG.3, illustrated is an example cross-section view of an integrated circuit device300comprising a TTRSD302with a buffer layer304. TTRSD302can represent substantially any two-terminal resistive switching device and can be, e.g., a non-volatile two-terminal memory device, an example of which is illustrated by device100ofFIG.1; a volatile two-terminal selector device, an example of which is illustrated by device200ofFIG.2; or another suitable device. In various embodiments, TTRSD302may be disposed upon an insulating substrate, an interlayer dielectric, an intermetal dielectric, or the like. As merely an example, TTRSD302may be a structure disclosed in U.S. patent application Ser. No. 14/636,363, referenced above, or may be formed using techniques disclosed therein, A method or process for constructing integrated circuit device300can comprise forming layers of a two-terminal resistive switching device302(e.g., layers of device100or device200or another suitable device) and forming buffer layer304overlaying and in contact with a top electrode (e.g., TE102or TE202) of the layers of TTRSD302. In some embodiments, this top electrode can comprise silver (Ag) or aluminum (Al), an aluminum or silver alloy, an aluminum or silver compound, or the like. In some embodiments, buffer layer304can comprise titanium nitride (TiN). In some embodiments, a thickness306of buffer layer304can be a range of between about 100 angstroms to about 150 angstroms. In some embodiments, buffer layer304can be formed by way of a physical vapor deposition (PVD) process. Referring now toFIG.4, illustrated is an example cross-section view of an integrated circuit device400comprising TTRSD302, buffer layer304, and an aluminum etch stop layer402. A method or process for constructing integrated circuit device400can comprise the method or process for constructing integrated circuit device300and further comprise forming etch stop layer402comprising aluminum overlaying and in contact with buffer layer304. In some embodiments, aluminum etch stop layer402can comprise other material in addition to aluminum. In some embodiments, aluminum etch stop layer402can comprise material that is substantially identical or substantially similar to material of an electrode of TTRSD302, for example, TE102or202. In some embodiments, a thickness404of aluminum etch stop layer402can be a range of between about 100 angstroms to about 200 angstroms. In some embodiments, aluminum etch stop layer402can be formed by way of a PVD process. Turning now toFIG.5, illustrated is an example cross-section view of a integrated circuit device500comprising TTRSD302, buffer layer304, an aluminum etch stop layer402, and a top cap layer502. A method or process for constructing integrated circuit device500can comprise the method or process for constructing integrated circuit device400and further comprise forming top cap layer502overlaying and in contact with aluminum etch stop layer402. In some embodiments, top cap layer502can comprise TiN, TaN, or the like. In some embodiments, a thickness504of top cap layer502can be a range of between about 300 angstroms to about 500 angstroms. In some embodiments, top cap layer502can be formed by way of a PVD process. With reference now toFIG.6, Illustration600is depicted. Illustration600depicts an example 3D view showing a first etching procedure602. It is understood that the example 3D view depicts a 3D view of integrated circuit device500after first etching procedure602has completed. As illustrated, first etching procedure602can substantially remove a portion of top cap layer502. In some embodiments, first etching procedure602can be a chemical etch procedure that employs, e.g., boron trichloride (BCl3), chlorine (Cl), or a compound comprising Cl, Cl2, BCl3, or other chlorine compound. As detailed, top cap layer502can comprise TiN and in various embodiments, the general mechanism for removing TiN is via a chemical etch that employs BCl3, Cl, or the like. It can be undesirable for active metal portions (e.g., TE102,202) of TTRSD302to come in contact with chlorine-based chemicals that can be utilized with first etching procedure602. Accordingly, in various embodiments, once at least some portion of aluminum etch stop layer402is exposed by first etching procedure602, a chemical signature can be detected that is used to begin termination of first etching procedure602. For example, the signal can be based on spectral emissions that indicate the presence of aluminum material from aluminum stop etch layer402. Generally, aluminum etch stop layer402will be thick enough (e.g., thickness404) to ensure that first etching procedure602does not completely penetrate aluminum etch stop layer402and/or expose buffer layer304. Accordingly, aluminum etch stop layer402can serve as a barrier to protect the active metal of a TE of TTRSD302. When aluminum from aluminum etch stop layer402is detected and first etching procedure602is terminated, it is appreciated that all or substantially all of the portion of top cap layer502being etched will be successfully removed. Although not depicted, it is possible that some, but ideally not all, of aluminum etch stop layer402will also have been removed. Turning now toFIG.7, illustration700depicts an example 3D view showing a second etching procedure702. In some embodiments, second etching procedure702can be a physical etch, e.g., an argon plasma, H2plasma etch, or the like. A notable difference between first etching procedure602and second etching procedure702is that second etching procedure702can be configured to mitigate undesired alteration or harm to active metal (e.g., silver, aluminum, etc.) properties of one or more terminals/electrodes of TTRSD302. Hence, second etching procedure702can be used to safely remove portions of some of the underlying layers. Such can include portions of top cap layer502and aluminum etch stop layer402that remain after first etching procedure602. In some embodiments, second etching procedure702may remove portions of buffer layer304and some portions of TTRSD302. As an example, second etching procedure702may etch some or all of the layers in TTRSD100including: top electrode102, active metal layer103, interface layer104and bottom electrode106; second etching procedure702may etch some or all of the layers in TTRSD200including: top electrode201, top active metal layer203, select layer204, bottom active metal layer205and bottom electrode206. In various embodiments, second etching procedure702may include one or more physical etch processes that etch one or more of the layers described above. In various embodiments, buffer layer304, aluminum etch stop layer402and top cap layer502may be used as a barrier material layer 412 in FIG. 4B in the structure disclosed in U.S. patent application Ser. No. 14/636,363, referenced above. The diagrams included herein are described with respect to interaction between several components (e.g., layers) of a memory device or an integrated circuit device, or memory architectures comprising one or more memory devices or integrated circuit devices. It should be appreciated that such diagrams can include those components, layers, devices and architectures specified therein, some of the specified components/layers/devices, or additional components/layers/devices. Sub-components can also be implemented as electrically connected to other sub-components rather than included within a parent device. Additionally, it is noted that one or more disclosed processes can be combined into a single process providing aggregate functionality. For instance, a deposition process can comprise an etching process, or vice versa, to facilitate depositing and etching a component of an integrated circuit device by way of a single process. Components of the disclosed architectures can also interact with one or more other components not specifically described herein but known by those of skill in the art. In view of the exemplary diagrams described supra, process methods that can be implemented in accordance with the disclosed subject matter will be better appreciated with reference to the flow charts ofFIGS.8-9. While for purposes of simplicity of explanation, the methods ofFIGS.8-9are shown and described as a series of blocks, it is to be understood and appreciated that the claimed subject matter is not limited by the order of the blocks, as some blocks may occur in different orders and/or concurrently with other blocks from what is depicted and described herein. Moreover, not all illustrated blocks may be required to implement the methods described herein. Additionally, it should be further appreciated that the methods disclosed throughout this specification are capable of being stored on an article of manufacture to facilitate transporting and transferring such methodologies to an electronic device. The term article of manufacture, as used, is intended to encompass a computer program accessible from any computer-readable device, device in conjunction with a carrier, or storage medium. Referring now toFIG.8, exemplary method800is illustrated. Method800can relate to employing an etched stop layer comprising aluminum in connection with fabrication of a two-terminal resistive switching device. For example, at reference numeral802, a TTRSD fabrication device can form various layers that can serve as layers or elements of an integrated circuit device such as a two-terminal resistive switching device. For instance, the layers can include a top electrode layer, a bottom electrode layer, an interface layer, and other suitable layers. The top electrode layer can serve as a top electrode element when the TTRSD has been fabricated (e.g., patterned and etched from the layers), the bottom electrode layer that can serve as a bottom electrode element, and the interface layer that can serve as a switching element. In some embodiments, the TTRSD can be a two-terminal memory device. In some embodiments, the TTRSD can be a two-terminal selector device. In some embodiments, the TTRSD can be a volatile switching device that does not permanently retain a current state in the absence of power, while in other embodiments, the TTRSD can be a non-volatile switching device. At reference numeral804, the fabrication device can form an etch stop layer that can overlay the top electrode layer. The etch stop layer can comprise aluminum. In some embodiments, the etch stop layer can be in contact with the top electrode layer. In other embodiments, intervening layers can be disposed between the etch stop layer and the top electrode layer. In some embodiments, the etch stop layer can have a layer thickness in a range between about 100 angstroms to about 200 angstroms. At reference numeral806, the fabrication device can form a top cap layer. The top cap layer can be overlaying and in contact with the etch stop layer. In some embodiments, the top cap layer can comprise titanium nitride (TiN). In some embodiments, the top cap layer can have a layer thickness in a range of between about 300 angstroms to about 500 angstroms. At reference numeral808, the fabrication device can employ a first etching procedure. The first etching procedure can comprise etching at least a portion of the top cap layer. In some embodiments, the first etching procedure can be a chemical etching procedure that employs certain chemicals to erode or remove material of the various layers. In some embodiments, the first etching procedure can employ a chemical etchant comprising chlorine. In some embodiments, the chemical etchant can be boron trichloride (BCl3), chlorine (Cl), a compound comprising Cl, Cl2, or BCl3, or other suitable etchants. The first etching procedure can further comprise stopping the etching in response to the etch stop layer comprising aluminum has been exposed. For example, when the presence of aluminum is detected in the etching environment, such can be an indicator that the etch stop layer has been reached and/or exposed, which can signal that the first etching procedure is to terminate. Method800can stop, or can proceed to insert A, which is further detailed in connection withFIG.9. Turning now toFIG.9, exemplary method900is illustrated. Method900can relate to additional aspects or elements in connection with fabrication of a two-terminal resistive switching device. For example, at reference numeral902, the fabrication device can form a buffer layer overlaying and in contact with the top electrode layer. In some embodiments, the buffer layer can be in contact with the top cap layer as well as the top electrode layer. In some embodiments, intervening layers can exist between the buffer layer and one or more of the top cap layer and the top electrode layer. In some embodiments, the buffer layer can comprise TiN. In some embodiments, the buffer layer can have a thickness in a range of between about 100 angstroms to about 150 angstroms. At reference numeral904, the fabrication device can employ a second etching procedure that removes a portion of some or all remaining layers such as those layers that are beneath the top cap layer or some portion of the top cap layer should any remain at the areas where the first etching procedure was applied. For example, the fabrication device can remove a portion of the etch stop layer. In embodiments where the buffer layer is present, the second etching procedure can remove portions of the buffer layer. In some embodiments, the second etching procedure can remove portions of the layers adjacent to the TTRSD. Example Operating Environments FIG.10illustrates a block diagram of an example operating and control environment1000for a memory array1002of a memory cell array according to aspects of the subject disclosure. In at least one aspect of the subject disclosure, memory array1002can comprise memory selected from a variety of memory cell technologies. In at least one embodiment, memory array1002can comprise a two-terminal memory technology, arranged in a compact two or three dimensional architecture. Suitable two-terminal memory technologies can include resistive-switching memory, conductive-bridging memory, phase-change memory, organic memory, magneto-resistive memory, or the like, or a suitable combination of the foregoing. A column controller1006and sense amps1008can be formed adjacent to memory array1002. Moreover, column controller1006can be configured to activate (or identify for activation) a subset of bit lines of memory array1002. Column controller1006can utilize a control signal provided by a reference and control signal generator(s)1018to activate, as well as operate upon, respective ones of the subset of bitlines, applying suitable program, erase or read voltages to those bitlines. Non-activated bitlines can be kept at an inhibit voltage (also applied by reference and control signal generator(s)1018), to mitigate or avoid bit-disturb effects on these non-activated bitlines. In addition, operating and control environment1000can comprise a row controller1004. Row controller1004can be formed adjacent to and electrically connected with word lines of memory array1002. Also utilizing control signals of reference and control signal generator(s)1018, row controller1004can select particular rows of memory cells with a suitable selection voltage. Moreover, row controller1004can facilitate program, erase or read operations by applying suitable voltages at selected word lines. Sense amps1008can read data from, or write data to the activated memory cells of memory array1002, which are selected by column control1006and row control1004. Data read out from memory array1002can be provided to an input/output buffer1012. Likewise, data to be written to memory array1002can be received from the input/output buffer1012and written to the activated memory cells of memory array1002. A clock source(s)1008can provide respective clock pulses to facilitate timing for read, write, and program operations of row controller1004and column controller1006. Clock source(s)1008can further facilitate selection of word lines or bit lines in response to external or internal commands received by operating and control environment1000. Input/output buffer1012can comprise a command and address input, as well as a bidirectional data input and output. Instructions are provided over the command and address input, and the data to be written to memory array1002as well as data read from memory array1002is conveyed on the bidirectional data input and output, facilitating connection to an external host apparatus, such as a computer or other processing device (not depicted, but see e.g., computer1002ofFIG.10, infra). Input/output buffer1012can be configured to receive write data, receive an erase instruction, receive a status or maintenance instruction, output readout data, output status information, and receive address data and command data, as well as address data for respective instructions. Address data can be transferred to row controller1004and column controller1006by an address register1010. In addition, input data is transmitted to memory array1002via signal input lines between sense amps1008and input/output buffer1012, and output data is received from memory array1002via signal output lines from sense amps1008to input/output buffer1012. Input data can be received from the host apparatus, and output data can be delivered to the host apparatus via the I/O bus. Commands received from the host apparatus can be provided to a command interface1016. Command interface1016can be configured to receive external control signals from the host apparatus, and determine whether data input to the input/output buffer1612is write data, a command, or an address. Input commands can be transferred to a state machine1020. State machine1020can be configured to manage programming and reprogramming of memory array1002(as well as other memory banks of a multi-bank memory array). Instructions provided to state machine1020are implemented according to control logic configurations, enabling state machine to manage read, write, erase, data input, data output, and other functionality associated with memory cell array1002. In some aspects, state machine1020can send and receive acknowledgments and negative acknowledgments regarding successful receipt or execution of various commands. In further embodiments, state machine1020can decode and implement status-related commands, decode and implement configuration commands, and so on. To implement read, write, erase, input, output, etc., functionality, state machine1020can control clock source(s)1008or reference and control signal generator(s)1018. Control of clock source(s)1008can cause output pulses configured to facilitate row controller1004and column controller1006implementing the particular functionality. Output pulses can be transferred to selected bit lines by column controller1006, for instance, or word lines by row controller1004, for instance. In connection withFIG.11, the systems, devices, and/or processes described below can be embodied within hardware, such as a single integrated circuit (IC) chip, multiple ICs, an application specific integrated circuit (ASIC), or the like. Further, the order in which some or all of the process blocks appear in each process should not be deemed limiting. Rather, it should be understood that some of the process blocks can be executed in a variety of orders, not all of which may be explicitly illustrated herein. With reference toFIG.11, a suitable environment1100for implementing various aspects of the claimed subject matter includes a computer1102. The computer1102includes a processing unit1104, a system memory1106, a codec1135, and a system bus1108. The system bus1108couples system components including, but not limited to, the system memory1106to the processing unit1104. The processing unit1104can be any of various available processors. Dual microprocessors and other multiprocessor architectures also can be employed as the processing unit1104. The system bus1108can be any of several types of bus structure(s) including the memory bus or memory controller, a peripheral bus or external bus, or a local bus using any variety of available bus architectures including, but not limited to, Industrial Standard Architecture (ISA), Micro-Channel Architecture (MSA), Extended ISA (EISA), Intelligent Drive Electronics (IDE), VESA Local Bus (VLB), Peripheral Component Interconnect (PCI), Card Bus, Universal Serial Bus (USB), Advanced Graphics Port (AGP), Personal Computer Memory Card International Association bus (PCMCIA), Firewire (IEEE 1394), and Small Computer Systems Interface (SCSI). The system memory1106includes volatile memory1110and non-volatile memory1112, which can employ one or more of the disclosed memory architectures, in various embodiments. The basic input/output system (BIOS), containing the basic routines to transfer information between elements within the computer1102, such as during start-up, is stored in non-volatile memory1112. In addition, according to present innovations, codec1135may include at least one of an encoder or decoder, wherein the at least one of an encoder or decoder may consist of hardware, software, or a combination of hardware and software. Although, codec1135is depicted as a separate component, codec1135may be contained within non-volatile memory1112. By way of illustration, and not limitation, non-volatile memory1112can include read only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or Flash memory. Non-volatile memory1112can employ one or more of the disclosed memory devices, in at least some embodiments. Moreover, non-volatile memory1112can be computer memory (e.g., physically integrated with computer1102or a mainboard thereof), or removable memory. Examples of suitable removable memory with which disclosed embodiments can be implemented can include a secure digital (SD) card, a compact Flash (CF) card, a universal serial bus (USB) memory stick, or the like. Volatile memory1110includes random access memory (RAM), which acts as external cache memory, and can also employ one or more disclosed memory devices in various embodiments. By way of illustration and not limitation, RAM is available in many forms such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDR SDRAM), and enhanced SDRAM (ESDRAM) and so forth. Computer1102may also include removable/non-removable, volatile/non-volatile computer storage medium.FIG.11illustrates, for example, disk storage1114. Disk storage1114includes, but is not limited to, devices like a magnetic disk drive, solid state disk (SSD) floppy disk drive, tape drive, Jaz drive, Zip drive, LS-100 drive, flash memory card, or memory stick. In addition, disk storage1114can include storage medium separately or in combination with other storage medium including, but not limited to, an optical disk drive such as a compact disk ROM device (CD-ROM), CD recordable drive (CD-R Drive), CD rewritable drive (CD-RW Drive) or a digital versatile disk ROM drive (DVD-ROM). To facilitate connection of the disk storage devices1114to the system bus1108, a removable or non-removable interface is typically used, such as interface1116. It is appreciated that storage devices1114can store information related to a user. Such information might be stored at or provided to a server or to an application running on a user device. In one embodiment, the user can be notified (e.g., by way of output device(s)1136) of the types of information that are stored to disk storage1114or transmitted to the server or application. The user can be provided the opportunity to opt-in or opt-out of having such information collected or shared with the server or application (e.g., by way of input from input device(s)1128). It is to be appreciated thatFIG.11describes software that acts as an intermediary between users and the basic computer resources described in the suitable operating environment1100. Such software includes an operating system1118. Operating system1118, which can be stored on disk storage1114, acts to control and allocate resources of the computer system1102. Applications1120take advantage of the management of resources by operating system1118through program modules1124, and program data1126, such as the boot/shutdown transaction table and the like, stored either in system memory1106or on disk storage1114. It is to be appreciated that the claimed subject matter can be implemented with various operating systems or combinations of operating systems. A user enters commands or information into the computer1102through input device(s)1128. Input devices1128include, but are not limited to, a pointing device such as a mouse, trackball, stylus, touch pad, keyboard, microphone, joystick, game pad, satellite dish, scanner, TV tuner card, digital camera, digital video camera, web camera, and the like. These and other input devices connect to the processing unit1104through the system bus1108via interface port(s)1130. Interface port(s)1130include, for example, a serial port, a parallel port, a game port, and a universal serial bus (USB). Output device(s)1136use some of the same type of ports as input device(s)1128. Thus, for example, a USB port may be used to provide input to computer1102and to output information from computer1102to an output device1136. Output adapter1134is provided to illustrate that there are some output devices1136like monitors, speakers, and printers, among other output devices1136, which require special adapters. The output adapters1134include, by way of illustration and not limitation, video and sound cards that provide a means of connection between the output device1136and the system bus1108. It should be noted that other devices or systems of devices provide both input and output capabilities such as remote computer(s)1138. Computer1102can operate in a networked environment using logical connections to one or more remote computers, such as remote computer(s)1138. The remote computer(s)1138can be a personal computer, a server, a router, a network PC, a workstation, a microprocessor based appliance, a peer device, a smart phone, a tablet, or other network node, and typically includes many of the elements described relative to computer1102. For purposes of brevity, only a memory storage device1140is illustrated with remote computer(s)1138. Remote computer(s)1138is logically connected to computer1102through a network interface1142and then connected via communication connection(s)1144. Network interface1142encompasses wire or wireless communication networks such as local-area networks (LAN) and wide-area networks (WAN) and cellular networks. LAN technologies include Fiber Distributed Data Interface (FDDI), Copper Distributed Data Interface (CDDI), Ethernet, Token Ring and the like. WAN technologies include, but are not limited to, point-to-point links, circuit switching networks like Integrated Services Digital Networks (ISDN) and variations thereon, packet switching networks, and Digital Subscriber Lines (DSL). Communication connection(s)1144refers to the hardware/software employed to connect the network interface1142to the bus1108. While communication connection1144is shown for illustrative clarity inside computer1102, it can also be external to computer1102. The hardware/software necessary for connection to the network interface1142includes, for exemplary purposes only, internal and external technologies such as, modems including regular telephone grade modems, cable modems and DSL modems, ISDN adapters, and wired and wireless Ethernet cards, hubs, and routers. As utilized herein, terms “component,” “system,” “architecture” and the like are intended to refer to a computer or electronic-related entity, either hardware, a combination of hardware and software, software (e.g., in execution), or firmware. For example, a component can be one or more transistors, a memory cell, an arrangement of transistors or memory cells, a gate array, a programmable gate array, an application specific integrated circuit, a controller, a processor, a process running on the processor, an object, executable, program or application accessing or interfacing with semiconductor memory, a computer, or the like, or a suitable combination thereof. The component can include erasable programming (e.g., process instructions at least in part stored in erasable memory) or hard programming (e.g., process instructions burned into non-erasable memory at manufacture). By way of illustration, both a process executed from memory and the processor can be a component. As another example, an architecture can include an arrangement of electronic hardware (e.g., parallel or serial transistors), processing instructions and a processor, which implement the processing instructions in a manner suitable to the arrangement of electronic hardware. In addition, an architecture can include a single component (e.g., a transistor, a gate array, . . . ) or an arrangement of components (e.g., a series or parallel arrangement of transistors, a gate array connected with program circuitry, power leads, electrical ground, input signal lines and output signal lines, and so on). A system can include one or more components as well as one or more architectures. One example system can include a switching block architecture comprising crossed input/output lines and pass gate transistors, as well as power source(s), signal generator(s), communication bus(ses), controllers, I/O interface, address registers, and so on. It is to be appreciated that some overlap in definitions is anticipated, and an architecture or a system can be a stand-alone component, or a component of another architecture, system, etc. In addition to the foregoing, the disclosed subject matter can be implemented as a method, apparatus, or article of manufacture using typical manufacturing, programming or engineering techniques to produce hardware, firmware, software, or any suitable combination thereof to control an electronic device to implement the disclosed subject matter. The terms “apparatus” and “article of manufacture” where used herein are intended to encompass an electronic device, a semiconductor device, a computer, or a computer program accessible from any computer-readable device, carrier, or media. Computer-readable media can include hardware media, or software media. In addition, the media can include non-transitory media, or transport media. In one example, non-transitory media can include computer readable hardware media. Specific examples of computer readable hardware media can include but are not limited to magnetic storage devices (e.g., hard disk, floppy disk, magnetic strips . . . ), optical disks (e.g., compact disk (CD), digital versatile disk (DVD) . . . ), smart cards, and flash memory devices (e.g., card, stick, key drive . . . ). Computer-readable transport media can include carrier waves, or the like. Of course, those skilled in the art will recognize many modifications can be made to this configuration without departing from the scope or spirit of the disclosed subject matter. What has been described above includes examples of the subject innovation. It is, of course, not possible to describe every conceivable combination of components or methodologies for purposes of describing the subject innovation, but one of ordinary skill in the art can recognize that many further combinations and permutations of the subject innovation are possible. Accordingly, the disclosed subject matter is intended to embrace all such alterations, modifications and variations that fall within the spirit and scope of the disclosure. Furthermore, to the extent that a term “includes”, “including”, “has” or “having” and variants thereof is used in either the detailed description or the claims, such term is intended to be inclusive in a manner similar to the term “comprising” as “comprising” is interpreted when employed as a transitional word in a claim. Moreover, the word “exemplary” is used herein to mean serving as an example, instance, or illustration. Any aspect or design described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other aspects or designs. Rather, use of the word exemplary is intended to present concepts in a concrete fashion. As used in this application, the term “or” is intended to mean an inclusive “or” rather than an exclusive “or”. That is, unless specified otherwise, or clear from context, “X employs A or B” is intended to mean any of the natural inclusive permutations. That is, if X employs A; X employs B; or X employs both A and B, then “X employs A or B” is satisfied under any of the foregoing instances. In addition, the articles “a” and “an” as used in this application and the appended claims should generally be construed to mean “one or more” unless specified otherwise or clear from context to be directed to a singular form. Additionally, some portions of the detailed description have been presented in terms of algorithms or process operations on data bits within electronic memory. These process descriptions or representations are mechanisms employed by those cognizant in the art to effectively convey the substance of their work to others equally skilled. A process is here, generally, conceived to be a self-consistent sequence of acts leading to a desired result. The acts are those requiring physical manipulations of physical quantities. Typically, though not necessarily, these quantities take the form of electrical or magnetic signals capable of being stored, transferred, combined, compared, and/or otherwise manipulated. It has proven convenient, principally for reasons of common usage, to refer to these signals as bits, values, elements, symbols, characters, terms, numbers, or the like. It should be borne in mind, however, that all of these and similar terms are to be associated with the appropriate physical quantities and are merely convenient labels applied to these quantities. Unless specifically stated otherwise or apparent from the foregoing discussion, it is appreciated that throughout the disclosed subject matter, discussions utilizing terms such as processing, computing, replicating, mimicking, determining, or transmitting, and the like, refer to the action and processes of processing systems, and/or similar consumer or industrial electronic devices or machines, that manipulate or transform data or signals represented as physical (electrical or electronic) quantities within the circuits, registers or memories of the electronic device(s), into other data or signals similarly represented as physical quantities within the machine or computer system memories or registers or other such information storage, transmission and/or display devices. In regard to the various functions performed by the above described components, architectures, circuits, processes and the like, the terms (including a reference to a “means”) used to describe such components are intended to correspond, unless otherwise indicated, to any component which performs the specified function of the described component (e.g., a functional equivalent), even though not structurally equivalent to the disclosed structure, which performs the function in the herein illustrated exemplary aspects of the embodiments. In addition, while a particular feature may have been disclosed with respect to only one of several implementations, such feature may be combined with one or more other features of the other implementations as may be desired and advantageous for any given or particular application. It will also be recognized that the embodiments include a system as well as a computer-readable medium having computer-executable instructions for performing the acts and/or events of the various processes. | 66,344 |
11944021 | DETAILED DESCRIPTION The present disclosure provides many different embodiments, or examples, for implementing different features of this disclosure. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly. A resistive random-access memory (RRAM) cell includes upper and lower electrodes, and a variable resistance element disposed between the upper and lower electrodes. The variable resistance element can be switched between different resistances that correspond to different data states, thereby enabling the RRAM cell to store one or more bit of data. In conventional RRAM cells, the upper electrode is coupled to an overlying metal layer (e.g., metal 1, metal 2, metal 3, etc.) by a contact or via. Although use of this coupling contact or via is widely adopted, the overall height of this RRAM cell plus this contact or via thereover is large relative to typical vertical spacing between adjacent metal layers (e.g., between a metal 2 layer and a metal 3 layer). To make this height more in line with the vertical spacing between adjacent metal layers, some embodiments of the present disclosure provides for techniques to couple the top electrode directly to an overlying metal line without a via or contact there between. Referring toFIG.1, a cross-sectional view of an RRAM cell100in accordance with some embodiments is provided. The RRAM cell100is disposed between a lower metal layer102and an upper metal layer104, and is surrounded by dielectric material106such as an inter-metal dielectric (IMD) layer or inter-layer dielectric (ILD) layer. In some embodiments, the upper and lower metal layers102,104are made of aluminum (Al), copper (Cu), tungsten (W), or combinations thereof, and the dielectric material106is a low-κ or extreme low-κ (ELK) dielectric material having a dielectric constant less than 3.9. The RRAM cell100includes a bottom electrode108and a top electrode110, which are separated from one another by a variable resistance element112. In some embodiments, the bottom electrode108and/or top electrode110are made of platinum (Pt), aluminum copper (AlCu), titanium nitride (TiN), gold (Au), titanium (Ti), tantalum (Ta), tantalum nitride (TaN), tungsten (W), tungsten nitride (WN), or copper (Cu). In some embodiments, the bottom electrode108and top electrode110can be made of the same material as one another; while in other embodiments the bottom electrode108and top electrode110can be made of different materials from one another. The variable resistance element112can include a resistance switching layer114and a capping layer116, which are stacked between the bottom and top electrodes108,110. In some embodiments, the resistance switching layer114is made of nickel oxide (NiO), titanium oxide (TiO), hafnium oxide (HfO), zirconium oxide (ZrO), zinc oxide (ZnO), tungsten oxide (WO3), aluminum oxide (Al2O3), tantalum oxide (TaO), molybdenum oxide (MoO), or copper oxide (CuO), for example. In some embodiments, the capping layer116can be made of platinum (Pt), aluminum copper (AlCu), titanium nitride (TiN), gold (Au), titanium (Ti), tantalum (Ta), tantalum nitride (TaN), tungsten (W), tungsten nitride (WN), or copper (Cu); and can be made of the same material or different material from the bottom electrode108and/or top electrode110. An etch-stop layer118is arranged over the lower metal layer102, and a base portion of the bottom electrode108extends downward through an opening in the etch stop layer118to contact to lower metal layer102. The base portion, which has lower sidewalls separated by a first distance d1, is narrower than an upper portion of the bottom electrode, which has upper sidewalls separated by a second distance, d2. A dielectric liner120is conformally disposed over sidewalls of top electrode110, along sidewalls of capping layer116, along sidewalls of resistance switching layer114, and along upper sidewalls of bottom electrode108. The dielectric liner120also extends laterally over the upper surface of etch-stop layer118. In some embodiments, the dielectric liner120and etch stop layer118are made of silicon carbide (SiC), silicon dioxide (SiO2), silicon oxynitride (SiON), or silicon nitride (Si3N4), and can be made of the same or different materials as one another. Notably, the RRAM cell100has its top electrode110coupled directly to upper metal layer104without a via or contact there between. Top electrode110has an upper planar surface which extends continuously between sidewalls of the top electrode110and which directly abuts the upper metal layer104, and which is co-planar with upper surfaces of dielectric liner120. Thus, the top electrode110can have a rectangular cross-section in some embodiments. Compared to conventional RRAM cells which have a via or contact coupling the top electrode to the overlying metal line, the RRAM cell100exhibits a diminished height which is more in line with the vertical spacing between other adjacent metal layers. This can allow for more streamlined integration, which can reduce costs and/or improve device reliability in some embodiments. During operation of the RRAM cell100, the resistance switching layer114has a variable resistance that represents a unit of data, such as a bit of data (or multiple bits of data), and the capping layer116is thought to transfer oxygen ions corresponding to oxygen vacancies to and from filaments in the resistance switching layer114to change the resistance of the resistance switching layer114. Whether ions are stripped from the filaments within the resistance switching layer114or stuffed into the filaments of the resistance switching layer114depends on what bias is applied across the bottom and top electrodes108,110. For example, to write a first data state to the RRAM cell100(e.g., to “set” a logical “1”), a first bias can be applied across the bottom and top electrodes108,110to strip oxygen ions from filaments in the resistance switching layer114and move those ions to the capping layer116, thereby putting the resistance switching layer114in a low-resistance state. In contrast, to write a second data state to the RRAM cell100(e.g., “reset” a logical “0”), a second, different bias can be applied across the bottom and top electrodes108,110to stuff oxygen ions from the capping layer116back into the filaments in the resistance switching layer114, thereby putting the resistance switching layer114in a high-resistance state. Further, through application of a third bias condition (different from the first and second bias conditions) across the bottom and top electrodes108,110, the resistance of the resistance switching layer114can be measured to determine the stored resistance (i.e., data state) in the RRAM cell100. FIG.2shows another embodiment of an RRAM cell100B in accordance with other embodiments. LikeFIG.1's embodiment, the RRAM cell100B includes a top electrode110having an upper surface that is in direct contact with upper metal layer104. Also likeFIG.1's embodiment,FIG.2's top electrode110has an upper planar surface which extends continuously between sidewalls of the top electrode and which directly abuts the upper metal layer104. RRAM cell100B also RRAM sidewall spacers122a,122bwhich abut outer sidewalls of top electrode110and capping layer116. The RRAM sidewall spacers122a,122bsit on outer edges of upper surface of resistance switching layer114, and can be made of a dielectric material, such as silicon nitride (Si3N4), a multilayer oxide-nitride-oxide film, or un-doped silicate glass (USG), for example. The RRAM sidewall spacers122a,122bcan have tapered or rounded upper surfaces, and the dielectric liner120is disposed conformally over the structure to follow outer sidewalls of the RRAM sidewall spacers122a,122b, and extend downward along outer sidewalls of the resistance switching layer114and bottom electrode108. WhereasFIG.1's upper portion of bottom electrode108and top electrode110had equal widths d2;FIG.2's bottom electrode108has a width d2′ that is larger than width d3of the top electrode110. FIG.3Aillustrates a cross sectional view of some embodiments of an integrated circuit300, which includes RRAM cells302a,302bdisposed in an interconnect structure304of the integrated circuit300. The integrated circuit300includes a substrate306, which may be, for example, a bulk substrate (e.g., a bulk silicon substrate) or a silicon-on-insulator (SOI) substrate, and is illustrated with one or more shallow trench isolation (STI) regions308. Two word line transistors310,312are disposed between the STI regions308. The word line transistors310,312include word line gate electrodes314,316, respectively; word line gate dielectrics318,320, respectively; word line sidewall spacers322; and source/drain regions324. The source/drain regions324are disposed within the substrate306between the word line gate electrodes314,316and the STI regions308, and are doped to have a first conductivity type which is opposite a second conductivity type of a channel region under the gate dielectrics318,320, respectively. The word line gate electrodes314,316may be, for example, doped polysilicon or a metal, such as aluminum, copper, or combinations thereof. The word line gate dielectrics318,320may be, for example, an oxide, such as silicon dioxide, or a high-κ dielectric material. The word line sidewall spacers322can be made of silicon nitride (Si3N4), for example. The interconnect structure304is arranged over the substrate306and couples devices (e.g., transistors310,312) to one another. The interconnect structure304includes a plurality of IMD layers326,328,330, and a plurality of metallization layers332,334,336which are layered over one another in alternating fashion. The IMD layers326,328,330may be made of an oxide, such as silicon dioxide, or a low-κ dielectric or an extreme low-κ dielectric. The metallization layers332,334,336include metal lines338,340,341,342, which are formed within trenches, and which may be made of a metal, such as copper, aluminum, or combinations thereof. Contacts344extend from the bottom metallization layer332to the source/drain regions324and/or gate electrodes314,316; and vias346extend between the metallization layers332,334. The contacts344and the vias346extend through dielectric-protection layers350,352, which can be made of dielectric material and can act as etch stop layers during manufacturing. The dielectric-protection layers350,352may be made of an extreme low-κ dielectric material, such as SiC, for example. The contacts344and the vias346may be made of a metal, such as copper, aluminum, tungsten, or combinations thereof, for example. RRAM cells302a,302b, which are configured to store respective data states, are arranged within the interconnect structure304between neighboring metal layers. The RRAM cells302a,302beach include a bottom electrode354and a top electrode356, which are made of conductive material. Between its top and bottom electrodes354,356, each RRAM cell302a,302bincludes a variable resistance element358, and a conformal dielectric layer360is disposed along sidewalls of the RRAM cells and over dielectric protection layer352. The metal lines341,342each have a lowermost surface that is co-planar with and in direct electrical contact with (e.g., ohmically coupled to) a top surface of top electrodes356. These structures within RRAM cell302acan correspond to those previously described with regards toFIG.1orFIG.2, and in which the top electrode356is in direct contact with the upper metal layer341,342. AlthoughFIG.3Ashows the RRAM cells302a,302barranged between the second and third metal layers334,336, it will be appreciated that RRAM cells can be arranged between any neighboring metal layers in the interconnect structure304. Further, althoughFIG.3illustrates only three metal layers for purposes of illustration, any number of metal lines can be included in interconnect structure304. Further still, the RRAMs cells need not be arranged between the two uppermost metallization layers as illustrated, but additional dielectric-protection layers and metallization layers can be included over the RRAM cells. Further, although this disclosure is described in the context of RRAM memory cells, it will be appreciated that these concepts can also be applied to other types of memory cells, such as ferromagnetic RAM (FeRAM) or phase-change RAM (PCRAM) for example, which are disposed between adjacent metallization layers, and can also be applied to metal-insulator-metal (MIM) capacitors. Accordingly, in these alternative embodiments, a resistance switching layer (e.g.,112inFIG.1or358inFIG.3) can more generally be referred to as a data storage layer or a dielectric layer in the context of memory devices or MIM capacitors. FIG.3Bdepicts some embodiments of a top view ofFIG.3A's integrated circuit300as indicated in the cut-away lines shown inFIGS.3A-3B. As can be seen, the RRAM cells302a,302bcan have a square or rectangular shape when viewed from above in some embodiments. In other embodiments, however, for example due to practicalities of many etch processes, the corners of the illustrated square shape can become rounded, resulting in RRAM cells302a,302bhaving a square or rectangular shape with rounded corners, or having a circular or oval shape when viewed from above. The MRAM cells302a,302bare arranged under metal lines341,342, respectively, and have top electrodes356in direct electrical connection with the metal lines341,342, respectively, without vias or contacts there between. FIG.4provides a flowchart of some embodiments of a method400for manufacturing an RRAM cell in accordance with some embodiments. While the disclosed method400and other methods that are illustrated and/or described herein may be illustrated and/or described herein as a series of acts or events, it will be appreciated that the illustrated ordering of such acts or events are not to be interpreted in a limiting sense. For example, some acts may occur in different orders and/or concurrently with other acts or events apart from those illustrated and/or described herein. Further, not all illustrated acts may be required to implement one or more aspects or embodiments of the description herein, and one or more of the acts depicted herein may be carried out in one or more separate acts and/or phases. At401, a substrate which includes RRAM top and bottom electrodes is provided. To form these RRAM top and bottom electrodes, a substrate is received at402. An interconnect structure, which includes a plurality of metal layers and dielectric layers stacked over one another over, is disposed over the substrate. At404, an etch stop layer is formed over an upper surface of a metal layer and over an upper surface of a dielectric layer of the interconnect structure. A first mask is formed over the etch stop layer. At406, a first etch is performed with the first mask in place to form an opening in the etch stop layer. At408, a bottom electrode layer is formed to extend through the opening in the etch stop layer and make contact with the metal layer. A resistance switching layer is formed over the bottom electrode layer, a capping layer is formed over resistance switching layer, and a top electrode layer is formed over the capping layer. A second mask is then formed and patterned over the top electrode layer. At410, a second etch is performed with the second mask in place to pattern the top electrode and bottom electrode. At412, a conformal dielectric liner is formed over an upper surface and sidewalls of patterned top electrode. The conformal dielectric liner extends downward along sidewalls of the capping layer, resistance switching layer, and bottom electrode. At414, a bottom antireflective coating (BARC) layer and/or photoresist layer are formed over the conformal dielectric liner. At416, a third etch is performed to etch back the BARC and/or photoresist layer. This third etch removes a portion of the conformal dielectric liner to expose an upper surface of the patterned top electrode while leaving a remaining portion of the conformal dielectric liner, BARC, and photoresist layer in place to cover sidewalls of the top electrode and sidewalls of the bottom electrode. At418, a remainder of the BARC and photoresist layer is removed, for example by ashing, thereby exposing upper and sidewall surfaces of the conformal dielectric liner. At420, an interlayer dielectric (ILD) layer is formed over the exposed upper surface of the patterned top electrode and over the upper surfaces and sidewalls of the conformal dielectric liner. At422, via openings and trench openings are formed in the ILD layer. At424, the via openings and trench openings are filled with metal to form conductive metal lines and conductive vias, where a metal line is in direct contact with the patterned top electrode. With reference toFIGS.5-16, a series of cross-sectional views that collectively illustrate an example manufacturing flow consistent with some example ofFIG.4is provided. AlthoughFIGS.5-16are described in relation to the method400, it will be appreciated that the structures disclosed inFIGS.5-16are not limited to the method, but instead may stand alone as structures independent of the method. Similarly, although the method is described in relation toFIGS.5-16, it will be appreciated that the method is not limited to the structures disclosed inFIGS.5-16, but instead may stand alone independent of the structures disclosed inFIGS.5-16. FIG.5illustrates a cross-sectional view of some embodiments corresponding to Act402ofFIG.4. FIG.5illustrates a cross-sectional view of some embodiments illustrating an interconnect structure304disposed over a substrate306. The illustrated portion of the substrate includes a memory region502and a logic region504surrounding the memory region502. The interconnect structure304includes an IMD layer328and one or more metal lines340which extend horizontally through the IMD layer328. Other IMD layers and metal lines can also be included in interconnect structure304, but are omitted here for purposes of clarity. The IMD layer328can be an oxide, such as silicon dioxide, a low-κ dielectric material, or an extreme low-κ dielectric material. The metal line340can be made of a metal, such as aluminum, copper, or combinations thereof. In some embodiments, the substrate306can be a bulk silicon substrate or a semiconductor-on-insulator (SOI) substrate (e.g., silicon on insulator substrate). The substrate306can also be a binary semiconductor substrate (e.g., GaAs), a tertiary semiconductor substrate (e.g., AlGaAs), or a higher order semiconductor substrate, for example. In many instances, the substrate306manifests as a semiconductor wafer during the method400, and can have a diameter of 1-inch (25 mm); 2-inch (51 mm); 3-inch (76 mm); 4-inch (100 mm); 5-inch (130 mm) or 125 mm (4.9 inch); 150 mm (5.9 inch, usually referred to as “6 inch”); 200 mm (7.9 inch, usually referred to as “8 inch”); 300 mm (11.8 inch, usually referred to as “12 inch”); or 450 mm (17.7 inch, usually referred to as “18 inch”); for example. After processing is completed, for example after upper metal layer is formed over RRAM cells, such a wafer can optionally be stacked with other wafers or die, and is then singulated into individual die which correspond to individual ICs. FIG.6illustrates a cross-sectional view of some embodiments corresponding to Act404ofFIG.4. InFIG.6, a dielectric-protection layer352is formed over IMD layer328and over metal line340. The dielectric-protection layer352is made of dielectric material, such as an oxide or ELK dielectric, and acts as an etch-stop layer. In some embodiments, the dielectric-protection layer352comprises SiC having a thickness of approximately 200 Angstroms. A mask600, such as a hard mask, antireflective coating (ARC) layer, and/or photoresist layer, is then patterned over the dielectric protection layer352. Mask600can be formed, for example, by spinning a layer of photoresist onto the wafer, selectively exposing portions of the photoresist layer to light by shining light through a reticle, and developing the exposed photoresist. FIG.7illustrates a cross-sectional view of some embodiments corresponding to Act406ofFIG.4. InFIG.7, a first etch700is carried out with the mask600in place to selectively remove portions of the dielectric-protection layer352. InFIG.7's embodiment, the first etch700is an anisotropic etch, such as a dry or plasma etch, that forms openings702having vertical sidewalls in the dielectric-protection layer352. In other embodiments, an isotropic etch, such as a wet etch, can be used and the openings702can have angled or tapered sidewalls that are non-vertical. FIG.8illustrates a cross-sectional view of some embodiments corresponding to Act408ofFIG.4. InFIG.8, a bottom electrode layer354is formed over the dielectric-protection layer352, and extends downwardly through the opening in the dielectric-protection layer352to make electrical contact with the metal line340. A resistance switching layer362is then formed over an upper surface of the bottom electrode layer354, and a capping layer364is then formed over an upper surface of the resistance switching layer362. A top electrode layer356is formed over the capping layer364. Further, the top electrode layer356may be, for example, about 10-100 nanometers thick. A second mask802is disposed over an upper surface of the top electrode layer356. In some embodiments, the second mask802is a photoresist mask, but can also be a hard mask such as a nitride mark. FIG.9illustrates a cross-sectional view of some embodiments corresponding to Act410ofFIG.4. InFIG.9, a second etch902is carried out with the second mask802in place to selectively remove portions of the top electrode356, capping layer364, resistance switching layer362, and bottom electrode354until an upper surface of dielectric protection layer352is exposed. In some embodiments, this second etch902is an anisotropic etch, such as a unidirectional or vertical etch. FIG.10illustrates a cross-sectional view of some embodiments corresponding to Act412ofFIG.4. InFIG.10, a conformal dielectric layer1002is formed over the structure, lining the upper surface and sidewalls of the second mask802, sidewalls of the top electrode356, sidewalls of the capping layer364, sidewalls of the resistance switching layer362, and upper sidewalls of the bottom electrode354. The conformal dielectric layer1002may be formed of, for example, silicon nitride, silicon carbide, or a combination of one or more of the foregoing. The conformal dielectric layer1002may be formed with a thickness of, for example, about 500 Angstroms. FIG.11illustrates a cross-sectional view of some embodiments corresponding to Act414ofFIG.4. InFIG.11, a protective layer1100is formed over the structure. In some embodiments, the protective layer1100is a BARC layer and/or a photoresist layer. FIG.12illustrates a cross-sectional view of some embodiments corresponding to Act416ofFIG.4. InFIG.12, the protective layer1100has been etched back so as to remove the second mask layer802and portions of the conformal dielectric liner1002, and thereby expose an upper surface of the top electrode356. Remaining portions of the protective layer1100′ are left in place to cover sidewalls of the conformal dielectric layer1002and extend laterally over upper surface of conformal dielectric layer1002. FIG.13illustrates a cross-sectional view of some embodiments corresponding to Act418ofFIG.4. InFIG.13, remaining portions of the protective layer1100′ have been removed. This removal may be accomplished, for example, by carrying out an ashing process1300, such as a plasma ashing process. FIG.14illustrates a cross-sectional view of some embodiments corresponding to Act420ofFIG.4. InFIG.14, an IMD layer1400, such as an extreme low-k dielectric layer is formed over the structure. FIG.15illustrates a cross-sectional view of some embodiments corresponding to Act422ofFIG.4. InFIG.15, photolithography is carried out to pattern one or more masks (not shown), and one or more corresponding etches are carried out to form trench openings1500and via openings1502. In some embodiments, these openings can be dual-damascene openings. InFIG.15, the via opening1502is formed in the logic region and extends downward to an upper surface of lower metallization line340. FIG.16illustrates a cross-sectional view of some embodiments corresponding to Act424ofFIG.4. InFIG.16, an upper metal layer341,342,1600is filled in the trench openings1500and via opening1502. Thus, the upper metal layer341,342can be in direct contact with the upper surface of the top electrodes356without a via connecting the top electrodes to the upper metal layer. For example, formation of the upper metal layer341,342,1600may include upper depositing a barrier layer in the via and trench openings, forming a Cu seed layer over the barrier layer in the via and trench openings, and then electroplating copper using the seed layer to fill the via and trench openings. Thus, the via openings and trench openings can be filled concurrently in some embodiments. After the upper metal layer is formed, chemical mechanical planarization (CMP) may be used to planarize upper surfaces of upper metal layer and IMD layer1400. FIG.17provides a flowchart of some other embodiments of a method1700for manufacturing an RRAM cell in accordance with some embodiments. At1701, a substrate which includes RRAM top and bottom electrodes is provided. To from these structures, at1702, substrate is received. The substrate includes an interconnect structure including a plurality of metal layers and dielectric layers stacked over one another over the substrate. At1704, an etch stop layer is formed over an upper surface of a metal layer and over an upper surface of a dielectric layer of the interconnect structure. A first mask is formed over the etch stop layer. At1706, a first etch is performed with the first mask in place to pattern the etch stop layer. At1708, a bottom electrode layer is formed over the etch stop layer, and a resistance switching layer is formed over the bottom electrode layer. A capping layer is formed over resistance switching layer, and a top electrode layer is formed over the capping layer. A second mask is formed and patterned over the top electrode layer. At1710, a second etch is performed with the second mask in place to pattern the top electrode and the capping layer. At1712, a conformal dielectric spacer layer is formed over an upper surface and sidewalls of the patterned top electrode. The conformal dielectric spacer extends downward along sidewalls of capping layer, and can also extend laterally over an upper surface of the resistance switching layer. At1714, the conformal dielectric spacer layer is etched back to form RRAM sidewall spacers, which are disposed about sidewalls of the patterned top electrode and capping layer. At1716, a third mask is formed over the top electrodes, and a third etch is performed with the third mask in place to remove an exposed portion of the resistance switching layer and the bottom electrode. At1718, a conformal dielectric layer is formed over the structure. The conformal dielectric layer extends over an upper surface and sidewalls of the patterned top electrode, sidewalls of the capping layer, sidewalls of the resistance switching layer, and sidewalls of the bottom electrode. At1720, a BARC and/or photoresist coating is formed over the structure, and the BARC and/or photoresist is then etched back to remove the conformal dielectric layer over the top electrode, thereby exposing an upper surface of the top electrode. Remaining portions of the BARC and/or photoresist coating still cover sidewalls of the conformal dielectric layer. At1722, the remaining portions of the BARC and/or photoresist layer are removed, thereby exposing sidewalls of the conformal dielectric liner. At1724, an ILD layer is formed over the exposed upper surface of patterned top electrode and over the conformal dielectric liner. In some embodiments, the ILD layer is made of an ELK dielectric material. At1726, via openings and trench openings are formed in the ILD layer. At1728, the via openings and trench openings are filled with metal to form conductive metal lines and conductive vias, where a metal line is in direct contact with the patterned top electrode. With reference toFIGS.18-34, a series of cross-sectional views that collectively illustrate an example manufacturing flow consistent with some example ofFIG.17is provided. FIG.18illustrates a cross-sectional view of some embodiments corresponding to Act1702ofFIG.17. FIG.18illustrates a cross-sectional view of some embodiments illustrating an interconnect structure304disposed over a substrate306.FIG.5illustrates a cross-sectional view of some embodiments illustrating an interconnect structure304disposed over a substrate306, and can be the same as previously described with respect toFIG.5. The illustrated portion of the substrate includes a memory region502and a logic region504surrounding the memory region502. The interconnect structure304includes an IMD layer328and one or more metal lines340which extend horizontally through the IMD layer328. FIG.19illustrates a cross-sectional view of some embodiments corresponding to Act1704ofFIG.17. InFIG.19, a dielectric-protection layer352is formed over IMD layer328and over metal line338. The dielectric-protection layer352is made of dielectric material, such as an oxide or ELK dielectric, and acts as an etch-stop layer. In some embodiments, the dielectric-protection layer352comprises SiC having a thickness of approximately 200 Angstroms. A mask1900, such as a hard mask, antireflective coating (ARC) layer, and/or photoresist layer, is then patterned over the dielectric protection layer352. FIG.20illustrates a cross-sectional view of some embodiments corresponding to Act1706ofFIG.17. InFIG.20, a first etch2000is carried out with the mask1900in place to selectively remove portions of the dielectric-protection layer352. InFIG.20's embodiment, the first etch is an isotropic etch, such as a wet etch, that forms openings2002having rounded or tapered sidewalls in the dielectric-protection layer352. In other embodiments, an anisotropic etch, such as a dry etch or plasma etch, can be used and may form the openings with vertical sidewalls. FIG.21illustrates a cross-sectional view of some embodiments corresponding to Act1708ofFIG.4. InFIG.21, a bottom electrode layer354is formed over the dielectric-protection layer352, and extends downwardly through the opening in the dielectric-protection layer352to make electrical contact with the metal line340. A resistance switching layer362is then formed over an upper surface of the bottom electrode layer354, and a capping layer364is then formed over an upper surface of the resistance switching layer362. A top electrode layer356is formed over the capping layer364. Further, the top electrode layer356may be, for example, about 10-100 nanometers thick. A second mask2100is disposed over an upper surface of the top electrode layer356. In some embodiments, the second mask2100is a photoresist mask, but can also be a hard mask such as a nitride mark. FIG.22illustrates a cross-sectional view of some embodiments corresponding to Act1710ofFIG.4. InFIG.22, a second etch2200is carried out with the second mask2100in place to selectively remove portions of the top electrode356and capping layer364until an upper surface of resistance switching layer is exposed. In some embodiments, the second etch is an anisotropic etch, such as a unidirectional or vertical etch. The second mask2100can optionally be removed after the second etch2200. FIG.23illustrates a cross-sectional view of some embodiments corresponding to Act1712ofFIG.17. InFIG.23, a conformal dielectric spacer layer2300is formed over the structure, lining the upper surface and sidewalls of the top electrode356, along sidewalls of the capping layer364, and extending over an upper surface of resistance switching layer362. The conformal dielectric spacer layer2300may be formed of, for example, silicon nitride, silicon carbide, or a combination of one or more of the foregoing. Even more, the conformal dielectric spacer layer may be formed with a thickness of, for example, about 500 Angstroms. FIG.24illustrates a cross-sectional view of some embodiments corresponding to Act1714ofFIG.17. InFIG.24, an etch back process2400is used to etch back the conformal dielectric spacer layer2300to form RRAM sidewall spacers122. FIG.25illustrates a cross-sectional view of some embodiments corresponding to Act1716ofFIG.17. InFIG.25, a third mask2500is formed over the top electrode356. The third mask can be a hard mask or a photomask, for example. Third Mask2500can be formed, for example, by spinning a layer of photoresist onto the wafer, selectively exposing portions of the photoresist layer to light by shining light through a reticle, and developing the exposed photoresist. FIG.26illustrates a cross-sectional view of some embodiments corresponding to Act1716ofFIG.17. InFIG.26, a third etch2600is carried out with the third mask2500in place to remove exposed portions of the resistance switching layer362and bottom electrode354. InFIG.27the third mask2500has been removed, for example through a plasma etching process. FIG.28illustrates a cross-sectional view of some embodiments corresponding to Act1718ofFIG.17. InFIG.28, a conformal dielectric layer2800is formed over the structure. The conformal dielectric layer2800may be formed of, for example, silicon nitride, silicon carbide, or a combination of one or more of the foregoing. The conformal dielectric layer2800may be formed with a thickness of, for example, about 500 Angstroms. FIG.29illustrates a cross-sectional view of some embodiments corresponding to Act1720ofFIG.17. InFIG.29, a BARC layer2900and/or photoresist coating are formed over the structure. FIG.30illustrates a cross-sectional view of some embodiments corresponding to Act1720ofFIG.17. InFIG.30, the BARC layer2900and/or photoresist coating is etched back. This etch back removes a portion of the conformal dielectric layer2800from over the upper surface of top electrode356, and leaves remaining portions of conformal dielectric layer2800along sidewalls of the RRAM sidewall spacers122, and along sidewalls of bottom electrode354. InFIG.30, another mask and etch (not shown) have been used to remove the conformal dielectric layer2800from over the logic region504. FIG.31illustrates a cross-sectional view of some embodiments corresponding to Act1722ofFIG.17. InFIG.31, an in-situ ashing process3100is carried out to remove the remaining portions of the conformal dielectric layer2800. FIG.32illustrates a cross-sectional view of some embodiments corresponding to Act1724ofFIG.17. InFIG.32, an IMD layer3200, such as an extreme low-k dielectric layer is formed over the structure. FIG.33illustrates a cross-sectional view of some embodiments corresponding to Act1726ofFIG.17. InFIG.33, photolithography is carried out to pattern one or more masks (not shown), and one or more corresponding etches are carried out to form trench openings3300and via openings3302. In some embodiments, these openings can be dual-damascene openings. InFIG.33, the via opening3302is formed in the logic region and extends downward to an upper surface of lower metallization line340. FIG.34illustrates a cross-sectional view of some embodiments corresponding to Act1728ofFIG.17. InFIG.34, an upper metal layer341,342,3400is filled in the trench openings3300and via opening3302. Thus, the upper metal layer341,342can be in direct contact with the upper surface of the top electrodes356without a via connecting the top electrodes to the upper metal layer. For example, formation of the upper metal layer341,342,3400may include upper depositing a barrier layer in the via and trench openings, forming a Cu seed layer over the barrier layer in the via and trench openings, and then electroplating copper using the seed layer to fill the via and trench openings. After the upper metal layer is formed, chemical mechanical planarization (CMP) may be used to planarize upper surfaces of upper metal layer and IMD layer3200. It will be appreciated that in this written description, as well as in the claims below, the terms “first”, “second”, “second”, “third” etc. are merely generic identifiers used for ease of description to distinguish between different elements of a figure or a series of figures. In and of themselves, these terms do not imply any temporal ordering or structural proximity for these elements, and are not intended to be descriptive of corresponding elements in different illustrated embodiments and/or un-illustrated embodiments. For example, “a first dielectric layer” described in connection with a first figure may not necessarily correspond to a “first dielectric layer” described in connection with another figure, and may not necessarily correspond to a “first dielectric layer” in an un-illustrated embodiment. Some embodiments relate to an integrated circuit including one or more memory cells arranged between an upper metal interconnect layer and a lower metal interconnect layer. A memory cell includes a bottom electrode coupled to the lower metal interconnect layer, a data storage layer disposed over the bottom electrode, and a capping layer disposed over the resistance switching layer. A top electrode is disposed over the capping layer. An upper surface of the top electrode is in direct contact with the upper metal interconnect layer without a via or contact coupling the upper surface of the top electrode to the upper metal interconnect layer. Other embodiments relate to an integrated circuit (IC). The IC includes a semiconductor substrate including a memory region and a logic region. An interconnect structure is disposed over the memory region and the logic region. The interconnect structure includes a plurality of metal interconnect layers disposed over one another and isolated from one another by interlayer dielectric (ILD) material. A plurality of memory cells or MIM capacitors are arranged over the memory region and are arranged between a lower metal interconnect layer and an upper metal interconnect layer adjacent to the lower metal interconnect layer. A memory cell or MIM capacitor includes a bottom electrode coupled to an upper portion of the lower metal interconnect layer. The memory cell or MIM capacitor also includes a top electrode having an upper planar surface which extends continuously between sidewalls of the top electrode and which directly abuts a bottom surface of the upper metal interconnect layer. Still other embodiments relate to a method. In the method, a semiconductor substrate is received which has an interconnect structure disposed over the substrate. A bottom electrode and a top electrode are formed over the interconnect structure over the memory region. The bottom electrode is coupled to a lower metal layer in the interconnect structure. The bottom and top electrodes are separated from one another by a data storage or dielectric layer. An interlayer dielectric (ILD) layer is formed over the top electrode. A trench opening having vertical or substantially vertical sidewalls is formed in the ILD layer. The trench opening exposes an upper surface of the top electrode. An upper metal layer is formed in the trench opening. The upper metal layer is in direct contact with the top electrode. The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. | 41,742 |
11944022 | Identical, similar or equivalent parts of the various drawings carry the same numerical references so as to facilitate the passage from one drawing to another. The various parts shown in the drawings are not necessarily according to a uniform scale, to make the drawings more readable. Moreover, in the description below, terms that depend on the orientation, such as “vertical”, “lateral”, “greater”, “lesser”, etc., of a structure apply while considering that the structure is oriented in the way illustrated in the drawings. DETAILED DISCLOSURE OF SPECIFIC EMBODIMENTS An example of a structure of a resistive memory cell C1according to an embodiment of the present invention is given inFIG.1. The resistive and non-volatile memory cell C1, for example of the OxRAM type, belongs to a memory array that is typically provided with a plurality of cells (not shown). The memory array is formed in thin layers on a support (not shown) such as a semiconductor substrate or a substrate of the semiconductor on insulator type. The memory array can be integrated into a lower stage of a microelectronic device and made in particular during steps of the “FEOL” (for Front-End-Of-Line) type, that is to say at the beginning of a method for manufacturing the microelectronic device, the stage thus being located at the transistors stage. Alternatively, the memory array can be integrated above a metal interconnection layer or between metal interconnection levels, during MEOL (for Middle-End-Of-Line) or BEOL-type (for Back-End-Of-Line) steps. In the latter case, in which the memory is located at metal interconnections, the memory cells can be integrated for example between a fifth stage (“metal 5”) of connection lines and a sixth stage (“metal 6”) of connection lines or between a fourth stage (“metal 4”) and a fifth stage (“metal 5”). The resistive memory cell C1includes a first electrode10, a second electrode30and a layer20of dielectric material disposed between the first electrode10and the second electrode30. The first electrode10is, in this example, called “lower” electrode, while the second electrode30is called “upper” electrode, the terms “lower” and “upper” being used here to characterise the position of the electrodes in the reference frame of the drawings. The memory cell C1has, just like a conventional resistive memory cell, an operation allowing it to reversibly switch between two states of resistance according to the voltage applied to its electrodes10,30. The memory cell C1is thus capable of reversibly switching between a “high resistance” state and a “low resistance” state. The dielectric layer20includes a “switching” zone in which a preferred conduction path for the current called conductive filament is capable of being created when a suitable voltage is applied to the electrodes10,30. The memory cell C1is thus in a low resistance state, a state in which a current for example between 5 μA and 25 μA is capable of passing through it. By applying a suitable erasing voltage between the electrodes10,30, at least a part of the conduction path can be eliminated or altered. The cell C1is thus in a high resistance state with a weaker current, for example less than 10 μA, than in the low resistance state and for example between 1 μA and 10 μA. The reading current that passes through the cell when it is read depends on the reading voltage applied, the reading voltage being, for the current values given above, typically between 0.05V and 0.4V. The electrodes10,30are each formed by one or more conductive layers and can include one or more conductive materials such as titanium nitride, titanium, tungsten. At least one of the electrodes, in this example the upper electrode30, is provided with a layer31of oxygen scavenger material, in other words having a high affinity for oxygen for example such as titanium (Ti), tantalum (Ta), or hafnium (Hf). This layer31is disposed here in contact with the dielectric layer20. The electrodes10,30are typically formed by layers12,32made of conductive material that can also be a barrier for diffusion of metal towards the dielectric layer such as TaN or TiN. In this example, conductive contacts13,33made of metal, for example such as tungsten, are also provided. The layer of dielectric material20can be a layer containing oxide or containing oxide regions, preferably an oxide of a transition metal for example such as an HfO2or HfOxhafnium oxide, or a Ta2O5or TaxOytantalum oxide, or a WOxtungsten oxide. The oxide layer20can also contain or include silicon oxide. Optionally, the layer of dielectric material20can include several superimposed sublayers of oxides. When it is made of hafnium oxide, the layer20of dielectric material can be provided with a thickness of between 3 nm and 20 nm, preferably between 5 nm and 10 nm. Rather than establishing a switching zone at the centre of a doped region of the dielectric layer in which charges were created, the inventors discovered, surprisingly, that a spatial confinement of the conductive filament could be obtained at an interface zone23between adjoining dielectric regions21,22having different compositions, in particular in terms of doping and/or dielectric constant. The cell C1thus has here the particularity of having a switching zone, in other words a zone of formation of a conductive filament, that is located at an interface23between two distinct dielectric regions21,22in contact with one another. These distinct regions21,22of the layer of dielectric material20can be regions of the same dielectric material but with different respective doping or consist of different dielectric materials with different respective dielectric constants. Thus, according to one implementation possibility, a first region21of the dielectric layer20includes a doping element, typically silicon or aluminium, according to an atomic concentration of doping element or a given density of doping element, while a second region22of the dielectric layer20is non-doped or is also doped but with a lower atomic concentration of said doping element than in the first region21. When the first region21is a region made of oxide, in particular made of oxide of transition metal doped with silicon, there can be an atomic concentration of doping element between 0.1% and 5%, advantageously between 0.3% and 2%, and preferably between 0.5% and 1.5%. In the case in which the first region21and the second region22are both doped with silicon, there can be a difference in concentration preferably greater than 0.3%. When the first region21is a region made of oxide doped with aluminium, there can be an atomic concentration of doping element preferably greater than 1%, for example between 1% and 5%. In the case in which the first region21and the second region22are both doped with aluminium there can be a difference in concentration preferably greater than 0.3%. Thus, a specific example of composition of the dielectric layer20provides a first region21containing hafnium oxide doped with silicon (HfO2:Si) or with aluminium, while the second region22is made of hafnium oxide not doped or with a concentration of dopants, in particular of silicon or of aluminium, lower than that of the first region21. According to another example, the first region21can contain tantalum oxide (Ta2O5:Si, TaOx:Si) doped with silicon while the second region22is made of tantalum oxide not doped or with a concentration of silicon lower than that of the first region21. A third example of composition provides a first region21made of silicon oxide doped with hafnium while the second region22is made of silicon oxide not doped or doped for example with hafnium and including a concentration of hafnium lower than that of the first region21. Alternatively, the regions21,22can be regions of the same oxide of a transition metal, but doped with different species. In this case, a specific embodiment provides a first region21containing hafnium oxide doped with silicon, while the second region22is made of hafnium doped with aluminium. According to another alternative, the regions21,22can be regions containing different dielectric materials and having different dielectric constants. An example of a specific embodiment of this alternative provides the second region22made of a dielectric material of the type commonly called “high-k”, in other words with a dielectric constant greater than that of silicon oxide, in particular an oxide of a transition metal for example hafnium oxide, and the first region21containing another dielectric material, for example SiO2or silicon nitride (SixNy), a dielectric material of the type commonly called “low-k” (dielectric constant lower than that of silicon oxide). To dispose the switching zone at the interface23between the regions21,22of the dielectric layer20, the electrodes10,30are arranged facing this interface23. The interface23extends in a plane Pmpassing through the dielectric layer20and passing through the electrodes10,30. In the specific embodiment illustrated, the plane Pmin which the interface23extends can form a median plane of the upper10and/or lower30electrode. “Median plane” means here a vertical plane dividing into two substantially equal parts the lower and/or upper electrode. “Vertical plane” means a plane that extends in parallel to the axis z of the orthogonal reference frame [O; x; y; z] given inFIG.1. The arrangement of the regions21,22facing the electrodes can be such that the first dielectric region21extends in a direction parallel to a main plane of the dielectric layer20, from said interface23at least to a zone21A located facing a first lateral face30A defining at least one of the electrodes20,30, here the upper electrode30. As for the second dielectric region22, it extends in a direction parallel to a main plane of the dielectric layer20between said interface23and a zone22B in the extension of a second lateral face30B defining said upper electrode30and which is opposite to said first lateral face30A. “Main plane” of the dielectric layer20means a plane passing through this dielectric layer20and which extends along this dielectric layer20in parallel to the plane [O; x; y] of the orthogonal reference frame [O; x; y; z] given inFIG.1. The arrangement of the dielectric regions21,22can be advantageously provided like in the example illustrated inFIG.1with a single interface23between regions21,22having different compositions, the cell C1thus including a single switching zone facing the upper electrode30. This can allow to reduce the electricity consumption and the level of the reading, writing, erasing voltages applied with respect to a cell in which there are several switching zones facing the same electrode30. Advantageously, at least one of the electrodes is centred facing the interface zone23, which allows to favour even more the confinement of the conductive filament at the interface23between the regions21,22. Thus, at least one of the electrodes, in this example the upper electrode30, extends facing a surface21sof the first region21equal or substantially equal to a surface22sof the second region22facing which it extends.FIGS.2A-2Bgive results of simulations obtained using the COMSOL Multiphysics Tool respectively on an axial component and a radial component of electric field in the dielectric layer of a cell structure of the type of that described above. The electrodes are in particular arranged facing an interface between a first region R21made of hafnium oxide doped with silicon and a second region R22made of non-doped hafnium oxide. The greatest radial component of the electric field at the interface I23between the region that is not charged and not doped with silicon and the charged region shows that a greater current density is obtained at this interface I23and, consequently, an effect of confinement of the conductive filament is obtained. InFIG.3, various curves301,302,303,304,305are representative of the reference radial electric field ratio at the interface and of radial electric field when moving away from this interface according to the forming voltage applied to the electrodes, respectively for various concentrations of dopants (respectively 3.65E19 cm−3, 2.73E19 cm−3, 1.81E19 cm−3, 0.75E19 cm−3, 0.38E19 cm−3) of the first region of a cell structure such as that described above, this first region being made of a dielectric material having a dielectric constant k1=19.2, while the second region is non-doped with a dielectric constant k2=20. It is observed here that a cell arranged according to the invention allows to operate at levels of forming voltages between 0.5 volts and 1.5 volts, in other words at levels of voltages lower than those of the devices according to the prior art. Other results of simulation of radial component of electric field are given inFIGS.4A and4Brespectively for a first cell having an interface between a first region R′21having a dielectric constant k′1=3.9 and a second region R′22having a dielectric constant k′2=20, and for a second cell with an interface between a first region R″21having a dielectric constant k″1=20 and a second region R″22having a dielectric constant k″2=3.9. It is thus noted that the spatial extension of the radial electric field depends on the difference in dielectric constant between the regions in contact with one another and forming the interface where the switching zone is located. FIGS.5A,5B,5Ceach give curves of simulation results giving the change in a maximum radial electric field in a cell structure as described above according to the dielectric constant ratio between the first dielectric region which is doped here and the second region which is not doped. InFIG.5A, the first region (curve510) has a dielectric constant that varies to approach the behaviour of a low-k dielectric, while the second region (curve520) adjoining the first region is made of non-doped hafnium oxide having a dielectric constant equal to 19. InFIG.5B, the first region (curve530) is made of hafnium oxide doped with silicon with a dielectric constant of approximately 18.25, while the second region (curve530) has a dielectric constant that varies to approach the behaviour of a low-k dielectric. InFIG.5C, the first region550has a dielectric constant that varies to approach the behaviour of a low-k dielectric, while a second region560adjoining the first region is provided with a dielectric constant of 3.9. It is thus noted that as soon as a difference in dielectric constant exists between the first and the second region, an exacerbation of the radial electric field is obtained, and that this phenomenon is greater as the dielectric constant ratio between the two regions increases. A particular manner of manufacturing an interface23of a memory cell as described above formed by regions21,22juxtaposed and in contact with one another is illustrated inFIG.6. Starting from a structure including the layer of dielectric material20arranged on the lower electrode10, the first region21is doped using an implantation or several successive implantations. The implantation(s) are carried out in a dielectric layer20, while a second region22of this layer20is preserved during this implantation, typically via a mask61arranged on the second region22. For example, to dope a layer20of hafnium oxide approximately 10 nm thick at an atomic concentration of silicon between 1% and 5%, an implantation carried out at an energy of 4 keV, with a dose of between 1*1015atoms*cm-2 and 5*1015atoms*cm-2 can be carried out. Then, the mask61is removed. The juxtaposed regions21,22and thus the interface23between these regions21,22intended to form the switching zone can advantageously be created without carrying out annealing for diffusion of dopants after the implantation. The upper electrode is then created facing the interface23between an implanted region and a non-implanted region, and optionally centred facing this interface23. An embodiment of a structure having an interface23as described above with this time different dielectric materials is illustrated inFIGS.7A-7C. After the deposition (FIG.7A) of a layer70of a first dielectric material72, for example made of silicon nitride, one or more openings75are formed in this layer70while exposing the lower electrode10(FIG.7B). The openings75can be made using a photolithography method during which a masking (not shown) is formed and through which an etching of the dielectric layer70is carried out. Then, the opening(s)75are filled via another dielectric material78, for example hafnium oxide. A CMP (for Chemical Mechanical Planarisation) planarisation can then be carried out in order to obtain a flat layer including at least one region21made of a dielectric material adjoining another region made of a dielectric material22having a dielectric constant different than that of the first material. An arrangement of the resistive memory device with this time several memory cells C11, C12, C13, C14is given inFIG.8. The memory array is here provided with distinct upper electrodes301,302,303,304that can be not connected to each other. These upper electrodes301,302,303,304are arranged respectively facing interfaces231,232,233,234between adjoining dielectric regions having different respective dielectric constants and/or different concentrations of doping element. The respective switching zones of the cells C11, C12, C13, C14are thus also placed at the interfaces231,232,233,234. The dielectric layer20includes this time an alternation of regions211,212, of a first type having a composition that can be similar to that of the first region21of the structure described above in relation toFIG.1, and regions221,222,223, of a second type, having a composition and dielectric constant different than the first region. The regions221,222,223can have a composition similar to that of the second region22described above in relation toFIG.1. Thus, the regions221,222,223are for example non-doped regions of a layer made of hafnium oxide, while the regions211,212are for example regions implanted with silicon in this layer of hafnium oxide. An upper electrode301and another upper electrode302are disposed here partly facing the same dielectric region211of the first type, for example of doped oxide of a transition metal, and partly facing two dielectric regions221,222of the second type, while being placed facing distinct interfaces231,232. The electrodes301,302can thus allow to power distinct switching zones. Likewise, another upper electrode303and the upper electrode302are placed partly overlapping on the same dielectric region222, for example of non-doped oxide of a transition metal, while being disposed facing distinct interfaces232,233of distinct switching zones. Such arrangements allow in particular to be able to create memories having small dimensions while having reduced constraints with regard to their dimensioning, in particular with regard to the pitch pmemof distribution of the memory cells C11, C12, C13, C14as well as the width W of the electrodes. At an equal cell dimension, a pitch twice as large can be obtained while having an increased electrode width W with respect to a device according to the prior art. At an equal cell dimension, the fact of providing electrodes having a greater width W can allow to relax the constraints of tolerance of misalignment between a given level of the microelectronic device in which the memory cells C11, C12, C13, C14are formed and a level above and/or below the given level. This can also allow to facilitate the contact on the electrodes and make the design of the cells easier in terms of arrangement constraint. Like in the embodiment described above, the upper electrodes301,302,303,304can be centred respectively facing the zones231,232,233,234. There can also be a single switching zone per cell, so that two distinct upper electrodes301,302allow to control two distinct switching zones of two distinct cells. In the specific embodiment illustrated inFIG.8, a single lower electrode101is shown but the device can also be provided with additional lower electrodes (not shown) typically parallel to each other. The lower and upper electrodes here have different respective orientations. Thus, in the specific embodiment illustrated inFIG.8, the memory follows an arrangement of the crossbar type. The upper electrodes301,302,303,304thus extend in parallel to a given direction, in this example parallel to the axis y of the reference frame [O; x; y; z], while the lower electrode(s)101extend in parallel to another direction, orthogonal to said given direction and in this example parallel to the axis x. In the embodiment illustrated, it is the upper electrodes301,302,303,304that have an orientation that follows that of the interface zones231,232,233,234, but it is also possible to provide an inverse arrangement in which the lower electrodes101,102,103,104are oriented in a direction parallel to that in which the interface zones231,232,233,234, the upper electrodes thus being orthogonal to the lower electrodes. Types of arrangements of electrodes other than an arrangement of the crossbar type are possible. Thus, in the embodiment illustrated inFIG.9, the upper electrodes301,302,303,304, and the lower electrodes101,102,103,104, of the resistive memory cells follow this time the same orientation. Each pair of upper and lower electrodes is distributed here symmetrically on either side of a block90of dielectric material including an interface23between a dielectric region21and an adjoining dielectric region22having a different dielectric constant and/or different doping. The pairs of electrodes101,301,102,302, . . . , are separated here from each other by trenches filled with insulating material92, for example SiN silicon nitride or SiO2. To carry out a memory device as described above, one can start from a support formed by a substrate, of the bulk type or of the semiconductor on insulator type for example SOI on which at least one stage of transistors is created. According to a specific embodiment illustrated inFIGS.10A-10F, the memory device is manufactured during a set of back-end steps above the level of the transistors and at least one stage of already-formed connection elements. First of all (FIGS.10A and10Bgiving a top view of the device) a plurality of parallel conductive lines1101, . . .1107is created by depositing on this stage (schematically shown by a block100shown in dotted lines inFIG.10A) a conductive material112for example containing TiN having a thickness than can be between for example 10 nm and 300 nm. The parallel conductive lines1101, . . .1107can be formed by etching or by filling of trenches. Insulating zones113, for example made of silicon oxide, are provided between the conductive lines. Then (FIG.10C), at least one layer120of dielectric material for example such as hafnium oxide or tantalum oxide is deposited according to a thickness that can be between for example 3 nm and 25 nm. Then (FIG.10D), in this layer120of oxide, doped regions121are created by carrying out one or more successive implantations. In the case in which the layer of dielectric material120is a layer of oxide of transition metal such as hafnium oxide or tantalum oxide, an implantation of silicon or of aluminium can be carried out. Typically, the implantation is carried out through openings124of a mask125, which is then removed. The openings124of the mask125can be in the form of oblong trenches, for example rectangular, in such a way as to create doped regions121having a corresponding shape. The doped regions121can be distributed regularly according to a pitch pdoptwo times greater than that of the memory points. The pitch of distribution of the memory points can correspond to that of the interfaces between doped regions121and non-doped regions122. Then (FIG.10E), a conductive stack provided with a layer131made of oxygen scavenger material, for example containing Ti, and having a thickness that can be between for example 3 nm and 20 nm is created. The stack also includes a layer132of conductive material, for example made of TiN, deposited on the oxygen scavenger material and having a thickness that can be between for example 5 nm and 300 nm. Then (FIG.10F), patterns are formed by photolithography in the conductive stack, so as to create the upper electrodes1301,1302,1303,1304, facing interfaces1231,1232,1233,1234between regions121of doped oxide and regions122of non-doped oxide. The etching of the layers131,132to form the upper electrode130, in particular of the layer of oxygen scavenger material, typically containing Ti, can, as illustrated inFIG.11, lead to a formation of oxidised zones135at the lateral sides of the electrodes1301,1302,1303,1304. In this case, with respect to cells according to the prior art, the impact of such oxidised zones135on the operation of the cells is lesser insofar as the switching zone here is provided at the interface123, in other words at a distance from the oxidised zones135. According to an alternative embodiment illustrated inFIG.12, an anisotropic etching is carried out to create the upper electrodes130that is then continued in the layer of dielectric material120and in the layer(s) forming the lower electrodes. The regions121and122forming the interface123in which the switching zone is located stop in this case in the extension of the lateral sides of the upper electrodes. Such an arrangement with a dielectric layer etched in distinct blocks90each provided with an interface123does not, here again, disturb the operation of the switching zone insofar as the latter is located at a distance from lateral sides90A,90B of the blocks90. According to another alternative embodiment of the method described above, the doped regions121can be created in several steps by successive implantations, respectively through the openings of a masking that are oriented in a first direction, then through other openings of another masking that are oriented in a second direction orthogonal to the first direction. | 26,110 |
11944023 | DESCRIPTION OF PREFERRED EMBODIMENTS The present invention relates to a non-volatile random access memory, more specifically resistive random access memory (ReRAM) (generally indicated by reference numeral10). In one example, the ReRAM10, in accordance with the invention, may include a first, bottom electrode2, a switching/active layer3which is coated on top of the bottom electrode2, and a second, top electrode4which is placed/deposited over the switching/active layer3so that the switching/active layer3is located in-between the two electrodes2,4. Reference is in this regard made toFIG.1which represents a commonly used two-terminal sandwich configuration of a ReRAM. The bottom electrode2is typically formed/coated on a glass substrate1. More specifically, indium tin oxide (ITO) is typically coated onto a glass substrate1, in order to form the bottom electrode2. The top electrode4is typically made of a metal such as titanium, silver or aluminium. The switching/active layer3is typically configured to perform a switching operation by changing a resistance between the electrodes2,4, according to an applied voltage. The switching/active layer3contains/includes chitosan (which is a biodegradable polymer) and aluminium (Al) incorporated/doped zinc oxide (ZnO). Zinc oxide is also environmentally friendly and bio-compatible. The switching/active layer3is typically prepared in solution and then spin coated onto an indium tin oxide coated glass substrate1(i.e. over the bottom electrode2), in order to form a thin film (or layer) over the bottom electrode2. The switching/active layer3therefore has/incorporates Al doped ZnO nano particles and chitosan, which is typically spin coated onto the substrate1(over the bottom electrode2). The top electrode is then placed/deposited onto the film3. Through experimentation, the Inventors found that the ReRAM10in accordance with the invention can have a remarkably high electrical switching behaviour from a high resistance state to a low resistance state, and vice versa (i.e. the high switching behaviour is reversible). More specifically, an on/off ratio of more than seven orders in the current versus voltage characteristics has been observed. Reference is in this regard made to the following example experiment: Experiment 1. In this experiment, a biodegradable, biocompatible ReRAM10was fabricated with a two terminal ReRAM cell structure consisting of a metal top electrode4, a switching/active layer3containing chitosan and aluminium doped zinc oxide nanoparticles, and an indium tin oxide (ITO) bottom electrode2provided on a glass substrate1.2. In this experiment, an ITO coated glass plate/substrate was used (e.g. purchased from Sigma-Aldrich). The plate was pre-cleaned in an ultrasonic bath with acetone for five minutes, followed by isopropylalcohol for 5 minutes and then with distilled water for five minutes, respectively.3. Course flakes of chitosan with high molecular weight (310,000-375,000 Da) (e.g. purchased from Sigma-Aldrich) was used to prepare an aqueous 1 wt. % chitosan solution (in which 1% acetic acid was added to induce complete dissolution of chitosan).4. The chitosan solution was continuously stirred for 24 hours using a magnetic stirrer at room temperature to completely dissolve chitosan flakes in distilled water.5. Aluminium doped zinc oxide nanoparticles, with sizes ranging from 20 nm-30 nm, were prepared by chemical pyrophoric method as explained in J. Das, D. K. Mishra and V. V. Srinivasu,Journal of Alloys and Compounds704 (2017) 37. Aluminium doping was varied to obtain Al0.01Zn0.99O, Al0.02Zn0.98O and Al0.03Zn0.97O nanoparticles which were designated as A2, A4 and A6, respectively.6. The aluminium doped zinc oxide nanoparticles were added to the chitosan solution in order to prepare solutions of chitosan and aluminium doped zinc oxide with different concentrations.7. The chitosan-aluminium doped zinc oxide solutions were then spin coated on the pre-cleaned ITO substrate (see step2above), using a known spin coating technique at a speed of 500 rpm for 30 seconds. This yielded a thin layer/film of the solutions over the ITO substrate, which serves as the bottom electrode2.8. The spin coated film was then dried at 60° C. for one hour in order to remove excess solvent from the film.9. A 2 mm size titanium top electrode14was then deposited on the film by a DC magnetron stuttering technique. This technique is well known and will therefore not be described in more detail.10. Current-voltage (I-V) characteristics of the fabricated ReRAM cells were measured. In these measurements, voltage was slowly varied from 0 V and the corresponding current flowing through the ReRAM was measured. These ReRAM cells exhibited low current until a threshold voltage was reached. At the threshold voltage (Vth), the current suddenly jumped to high values and remained at this high current value for further increase in voltage. Such a phenomenon is characteristic of a resistive switching ReRAM and the ratio of the current values before and after switching is termed as the on/off ratio. Of the ReRAM sells fabricated/manufactured, the best results in on/off ratio, in excess of (>) 107, was obtained with the film containing AlxZn1-xO nanoparticles with varying x of Al. Reference is in this regard made toFIG.2which provides a graphical illustration of the I-V characteristics of the manufactured ReRAM. From this figure, it will be noted that the on/off ratio is in excess of (>) 107(obtained for the optimized doping of Al (x=0.02) and a 10 weight % of AlxZn1-xO in Chitosan). As illustrated inFIG.2, switching occurred at about 1.8V (i.e. Vth=1.8V). From the above, it will be noted that the present invention provides a ReRAM with extremely high switching capabilities (i.e. an on/off ratio in excess of 107). The active layer is also biodegradable since its main content is chitosan and the ReRAM can therefore be seen as being environmentally friendly (i.e. a “green memory device”). The invention therefore provides an Aluminium doped Zinc Oxide (Al:ZnO) incorporated Chitosan active layer for high performance and biodegradable non-volatile resistive random access memory (ReRAM). | 6,206 |
PP35566 | BOTANICAL DESCRIPTION OF THE PLANT The following is a detailed description of the new cultivar ‘TMWG19-28’. Data was collected in mid-April from fully flowering three years old plants grown in 3.7-gallon (14 liter) containers in Santa Barbara, California. The color determinations are in accordance with the 2007 edition of The Colour Chart of The Royal Horticultural Society, London, England, except where general color terms of ordinary dictionary significance are used. No chemicals were used to treat the plants. Growing conditions are typical of otherWeigela.Botanical classification:Weigela.Variety.—‘TMWG19-28’.Species.—florida.Parentage:Female parent.—Unknown.Male parent.—Unknown.Plant description:Growth habit.—Compact, broad mound.Use.—In containers and in the landscape.Suitable container sizes.—1 gallon, 3 gallon and larger.Dimensions.—30 cm to 35 cm in height, and 50 cm to 55 cm in width.Hardiness.—At least hardy to USDA Zone 5.Propagation.—Stem cuttings.Time to initiate roots.—5 to 6 weeks are required to produce roots on an initial cutting.Crop time.—9-10 months to produce a first year flowering plant in a small container. Additional years to produce larger specimen plants.Root system.—Fibrous.Light.—Plant in full sun or partial shade.Soil.—Plant in moist but well drained soil.Type.—Deciduous shrub.Seasonal interest.—Extremely floriferous in early-mid spring.Stem (below first pinch or stop):Shape.—Terete.Dimensions.—1 cm in length, 1.0 cm in diameter.Color.—197C.Surface.—Lignified, rough.Branches:Quantity.—Approximately 40 primary and lateral branches.Branch stem dimensions.—25 cm to 35 cm in length, 4 mm to 5 mm in diameter.Shape.—Terete.Internode length.—1 cm to 2.5 cm.Color.—197D.Surface.—Smooth, lenticels where present (lower internodes only) spaced approximately 2 mm to 6 mm apart, elliptic, length 2 mm to 6 mm, width 1.0 mm, slightly raised (less than 0.5 mm), color 197B.Foliage:Leaf arrangement.—Opposite.Leaf division.—Simple.Leaf shape.—Ovate, longitudinally inwardly curved.Leaf attachment.—Petiolate.Petiole shape.—Sulcate, adaxial surface concave.Petiole dimensions.—5 mm to 6 mm in length and 3 mm in width.Petiole color.—145B.Petiole surface.—Pubescent, hairs fine, white NN155D, length increasing from 0.5 mm at base of leaf to 1.5 mm at stem.Leaf dimensions.—72 mm in length, 36 mm in width.Leaf surface(adaxial).—Glabrous, semi-glossy.Leaf surface(abaxial).—Glabrous, matte.Leaf color(adaxial surface).—137A-137B.Leaf color(abaxial surface).—138B.Leaf apex.—Narrowly acute, occasionally acuminate, tip 1.5 mm in length, recurved, color 187A.Leaf base.—Cuneate.Leaf margin.—Finely serrate, glabrous.Leaf venation pattern.—Pinnate.Veins(adaxial surface).—Flat, color as leaf, except midrib and lower veins 145B.Veins(abaxial surface).—Prominent midrib and veins, increasingly raised towards base, color 145C.Inflorescence, flowers:Inflorescence form.—Terminal cyme.Flowers arrangement.—From 7 to 14 flowers borne in axils of each terminal node.Quantity of flowers per plant.—Approximately 300 flowers and buds at peak flowering.Flower aspect.—Initially (buds and first opening) outward and upward facing, becoming horizontal and downward facing as flowers mature and age.Diameter of fully developed flower(at flower tube apex).—34 mm as presented, 38 mm measured when flattened.Length of flower, including corolla tube.—28 mm to 30 mm.Bud.—Shape: Cylindrical, apex capitate. Color: 65B. Dimensions: 26 mm in length, 5 mm to 8 mm in diameter immediately prior to opening. Surface: Faintly puberulent.Bracteoles.—Arrangement: Irregular, absent or borne singly or in pairs at base of peduncle. Shape: Narrowly lanceolate. Dimensions: Range from 2 mm to 13 mm in length, all are 1 mm in width at base. Color: 138B. Surface: Glabrous.Peduncle.—Dimensions (buds): 5 mm to 6 mm in length and 1 mm in diameter. Dimensions (flowers): 13 mm to 15 mm in length and 1 mm in diameter. Shape: Round. Color: 145A (buds), 139C (flowers). Surface: Smooth, glossy.Calyx, sepals.—Shape: Narrow funnel-shaped, clasps base of corolla tube. Calyx diameter: 4 mm measured across sepal apices. Sepals: 5 in number, free except fused at base. Sepal dimensions: 7 mm to 9 mm in length, 2 mm in width. Sepal color (adaxial surface): 144B. Sepal color (abaxial surface): 142C. Sepal surface (both surfaces): Matte, faintly puberulent.Flowers, general description.—All flowers emerge from mid-pink colored buds. Most flowers open mid-pink and become pale pink and then white with age. Some flowers, approximately 2-3 out of 10, remain pink with age. The stamens and anthers of the flowers are white or pink according to the flower color itself.Flower(corolla tube, fused petals, free and flared petal lobes.—Shape: Salverform. Dimensions: 24 mm in length, 2 mm in diameter at tube base, 12 mm in diameter at base of petal lobes, 34 mm in diameter across lobe apices. Surface: Glabrous. Color (flowers become white, both surfaces): 150D at base, becoming 65B then 65C then N155B and finally NN155D. Color (flowers remain pink, both surfaces): 150D at base, becoming 65B or 65C.Reproductive organs:Number of stamens.—5, individually fused to corolla tube at base.Dimensions(filaments).—16 mm in length, 6 mm where fused, 10 mm free; diameter 0.75 mm to 1.0 mm in diameter.Filament color(flowers become white).—NN155D.Filament color(flowers remain pink).—N74B at base, becoming 65A then N155B beneath anther.Anther shape.—Narrow elliptical, apex bifid.Anther dimensions.—5 mm in length and 0.75 mm-1 mm in width.Anther color.—161C to 161D.Pollen amount.—Sparse.Pollen color.—155B.Number of pistils.—1.Style.—Round, 35 mm in length and 0.5 mm in diameter.Style color(white flowers).—145D at base, becoming NN155D towards stigma.Style color(pink flowers).—N74B at base, becoming 65A then N155B beneath anther.Style surface.—Glabrous.Stigma shape.—Capitate.Stigma dimensions.—2.5 mm in diameter and 1.5 mm in height.Stigma color.—NN155A.Ovary.—Not developed on any observed flowers.Fruit: None observed.Seed: None observed.Susceptibility or resistance to pests and diseases: None. COMPARISON WITH PARENT VARIETIES The parents of ‘TMWG19-28’ are unknown. No comparison is available. COMPARISON WITH KNOWN VARIETY ‘TMWG19-28’ may be compared with the widely grownWeigelavariety ‘Bristol Ruby’ (U.S. Plant Pat. No. 492). Both ‘TMWG19-28’ and ‘Bristol Ruby’ bear bright mid-green foliage. However, whereas ‘TMWG19-28’ is a compact and low growing variety, ‘Bristol Ruby’ exhibits an erect habit and may achieve heights in excess of 2 meters in the ground. In addition, the flowers of ‘TMWG19-28’ are multicolored pink and white, whereas the flowers of ‘Bristol Ruby’ are red. | 6,694 |
PP35567 | DESCRIPTION OF THE NEW VARIETY The following detailed descriptions set for the distinctive characteristics of ‘PODARASNGA 3-30’. Measurements were taken from a 5-month-old plant, potted in a 3-gallon container and grown outdoors under irrigation. Color references are to The R.H.S. Colour Chart of The Royal Horticultural Society of London (R.H.S.) 2001, Fourth Edition.Classification:Family.—Scrophulariacace.Botanical.—Buddleiaxhybrida(Buddleia davidiixB. crispaxB. alternifoliaxB. lindleyana).Designation.—‘PODARASNGA 3-30’.Plant:Type and habit.—Deciduous shrub with a vigorous growth habit; has a profuse number of flowers at each branch terminus; readily produces branches at each node; has horizontal branches with vertical secondary branches terminating in an inflorescence; very fastigiate habit.Form.—Oval, horizontal and low to the ground.Height(at crown and measured from the top of the soil).—140 cm.Width(horizontal plant diameter).—150 to 200 cm.Time to produce a finished plant.—To produce a 4-inch plant: 5 to 6 weeks from cuttings. To produce a 1-gallon pot: 8 to 10 weeks.Outdoor plant performance.—Excellent in average soil structure with full sun; average fertility and water usage.Natural flowering season.—At least 4 weeks beforeB. davidiiand continuing up to a hard frost.Time to initiate and develop roots.—7 to 10 days using 3,000 to 4,000 ppm IBA (indolebutyric acid) for tougher plant material or 2,000 ppm IBA for softer plant material.Root description and habit.—Dense and fibrous; roots are RHS 20B.Propagation type.—Softwood cuttings.Hardiness.—Hardy to USDA Zone 6, possibly hardy in USDA Zone 5b; pruning is not recommended after August.Lateral branches:General.—Mature branches are 4-sided.Quantity per plant.—About 19 horizontal primary branches and 73 vertical secondary branches terminating in inflorescence.Length.—Primary branches range from about 43.0 cm to 46.0 cm; secondary vertical branches range from about 14.0 cm to 20.0 cm.Internode length.—Primary branches range from 2.0 to 4.0 cm; secondary branches range from 3.0 cm to 5.0 cm.Diameter, for all branches.—About 0.5 cm; from midpoint, about 0.25 cm.Color.—Branches exposed to sunlight are RHS 181C; branches not exposed to sunlight are RHS 166D.Angle of branch attachment.—About 180 degrees for primary branches and about 90 degrees for secondary branches which are pliable.Texture.—Floccose.Strength.—Anthocyanin.—RHS N187A.Leaves:Leaf arrangement and quantity.—32 leaves per branch; opposite; about 10 pairs of leaves on the primary horizontal branches; about 6 pairs of leaves on the secondary vertical branches.Length.—2 cm nearest flower panicle to 13 cm near base of plant.Width.—0.75 cm nearest the flower panicle to 4.5 cm at the base of the plant.Shape and appearance.—Lanceolate and rugose.Apex.—Aristulate.Base.—Shortly attenuate.Margin.—Weakly denticulate; crenulate under magnification with denticulate tips.Texture.—Upper surface: Pubescent and weakly rugose with many RHS 17A papillate glands. Lower surface: Strongly floccose; upon removal of floccose, RHS 17A papillate glands cover the lower surface.Color, immature.—Upper surface: RHS 138A. Lower surface: RHS 195D.Color, mature.—Upper surface: RHS 137A. Lower surface: RHS 195B.Venation pattern.—Pinnate with RHS 17A papillate glands on the veins.Venation color.—Upper surface: RHS 195C. Lower surface: RHS 195C.Petiole.—Length: 0.7 cm to 0.8 cm. Diameter: 0.2 cm. Texture: Strongly floccose. Color: RHS 146B with RHS 17A papillate glands.Inflorescence (panicle):Appearance.—Panicles are elongated and conical in shape; terminal inflorescence is frequently three in number with the center inflorescence being longer than the two axillary inflorescences; panicle stem attachment on a primary stem is vertical and on a secondary stem, ranges from vertical to less than 30 degrees.Height.—Of primary inflorescence/panicle: Between about 10.5 cm to 17.6 cm. Of two axillary inflorescence/panicles: Between about 5.5 cm to 12.5 cm.Width.—Of primary inflorescence/panicle: Between about 3.0 cm and 4.1 cm. Of two axillary inflorescence/panicles: Between about 2.0 cm to 2.4 cm.Bud.—General: Buds begin as a bud cluster and are RHS 145A with RHS N92A at the tip and as the buds mature, they become individualized and enlarge; the length of the bud cluster is 1.0 cm and the width of the bud cluster is 0.4 cm. Shape: Strongly conical. Texture: Strongly floccose. Length: 3.5 cm. Width: 1.0 cm. Color: RHS N92A.Flower.—Type and habit: Single and salverform flowers arranged in compound terminal panicles which are elongated-conical in shape; flowers face upright and outward. Fragrance: Very fragrant. Lastingness of flowers on the plant: 7 to 10 days. Quantity of flowers per inflorescence (panicle): About 748. Depth: 1.0 cm. Diameter: 0.15 cm.Petals.—Arrangement: Four or five petals arranged in a single whorl with the petals fused for form a tube. Shape: Rotund overall with jagged edges randomly varying between crenate and erose patterns edges. Apex: Salver-shaped. Base: Fused. Margin: Repand. Texture (both upper and lower surfaces): Floccose and glossy. Length: 0.4 cm. Width: 0.4 cm. Color, immature (both upper and lower surfaces): RHS N92B. Color, mature (both upper and lower surfaces): RHS N80A.Corolla tube.—Length: 1.0 cm. Width: 0.15 cm. Color: Inner surface: RHS N163. Outer surface: RHS N80A. Between the throat and petal: RHS 158A. Texture: Inner surface: Hirsute; white hairs surround the interior of the tube and are angled outward. Outer surface: Floccose.Calyx.—Arrangement and quantity per flower: Five sepals arranged in a single whorl and fused at the base. Sepals: Shape: Ligulate. Apex: Acute. Base: Fused. Margin: Entire. Length: 3.0 cm. Width: 0.05 cm. Texture: Upper surface: Floccose. Lower surface: Smooth. Color (both upper and lower surfaces): RHS 137B.Peduncle.—Length: 0.5 cm to 2.5 cm. Diameter: 0.3 to 0.4 cm. Strength: Flexible; less than 40-degree bend. Color: RHS 166D. Texture: Floccose.Pedicel.—Length: 0.05 cm. Diameter: 0.01 cm. Color: RHS 166D. Texture: Floccose.Reproductive organs:Stamens.—Quantity per flower: 5. Filament: General: Completely fused to corolla tube. Anther: Length: 0.1 cm. Color: RHS 4C. Pollen amount: Moderate.Pistil.—Quantity per flower: 1. Length: 0.4 cm. Stigma: Shape and appearance: Spatulate-appearing in some instances with two barely distinguishable lobes; sometimes darkly pigmented at the very tip same color as corolla tube. Color: RHS 141C. Style: Length: 0.1 cm. Color: RHS N155A. Ovary: Shape and position: Globular and superior. Width: 0.1 cm. Color: RHS 141C with RHS 155B (White) floccose.Seed:General.—Seeds are enclosed in the ovary capsule; the seeds and the capsule are a dark black, but darker than any RHS color; no description of seed as seed has not been observed at maturity.Disease and insect resistance: None observed. COMPARISON WITH COMMERCIAL VARIETY When ‘PODARASNGA 3-30’ is compared to the commercial variety ‘Violet Cascade’ (U.S. Plant Pat. No. 34,298), ‘PODARASNGA 3-30’ is 45.5 cm in height, while ‘Violet Cascade’ is 122 cm in height. When ‘PODARASNGA 3-30’ is compared to the female parent, an un-named, unpatented proprietaryBuddleiahybrid, ‘PODARASNGA 3-30’ has darker pigmentation of blooms and shorter stature than the female parent. When ‘PODARASNGA 3-30’ is compared to the male parent, an un-named, unpatented proprietaryBuddleiahybrid, ‘PODARASNGA 3-30’ has darker pigmented flowers and more dense branching structure than the male parent. | 7,526 |
PP35568 | BOTANICAL DESCRIPTION OF THE PLANT The following observations and measurements made in November of 2022 describe averages from a sample set of six specimens of 18-month-old ‘OVWOODS04’ plants grown in 12 cm nursery containers at commercial greenhouse in Bleiswijk, The Netherlands. The plants were grown in full sun to semi-shade. Plants were maintained with a standard fertility program for plants of this type and regularly watered with overhead irrigation as well as through use of ebb-and-flow hydroponic greenhouse benches. No chemical pest measures were taken. Those skilled in the art will appreciate that certain characteristics will vary with older or, conversely, with younger plants. ‘OVWOODS04’ has not been observed under all possible environmental conditions. Where dimensions, sizes, colors and other characteristics are given, it is to be understood that such characteristics are approximations or averages set forth as accurately as practicable. The phenotype of the variety may differ from the descriptions set forth herein with variations in environmental, climactic and cultural conditions. Color notations are based on The Royal Horticultural Society Colour Chart, The Royal Horticultural Society, London, 2015 (sixth edition). A botanical description of ‘OVWOODS04’ and comparisons with the parent and closest known commercial comparator are provided below.Plant description:Growth habit.—Broad spreading to upright perennial.Plant form.—Irregular broad obovate to globular.Average height.—17.9 cm from the soil level to the top of the foliar plane.Plant spread.—Average of 21.1 cm.Plant vigor.—Moderately vigorous.Propagation type.—Stem cuttings.Time to initiate roots.—Approximately 14 days to initiate roots at temperatures ranging from 15 to 20 degrees Celsius.Time to produce a rooted cutting.—Approximately 6 weeks to produce a rooted cutting.Disease resistance.—Neither resistance nor susceptibility to typicalCrassulapests and diseases has been observed.Environmental tolerances.—Adapt to, at least, USDA Zones 10 and 12 and temperatures as high as 40 degrees Celsius; low tolerance to rain; moderate to high tolerance to wind.Root system:General.—Moderately dense and freely branched rooting; roots are moderately fibrous.Distribution in the soil profile.—Shallow to moderately deep.Diameter of roots.—0.8 mm on average.Texture.—Smooth and glabrous.Color.—Greyed-orange, nearest to RHS 164A.Stem:General branching habit.—Multiple main stems, freely branching with lateral branches. Pinching isn't required but will improve branching.Main stems.—Quantity of main stems per plant — 3. Attitude — Upright. Cross-section — Rounded. Texture — Glabrous; glaucous. Luster — Juvenile stems are very slightly glossy; mature stems are matte. Strength — Strong. Color, juvenile — Yellow-green, nearest to a mixture of RHS 147D and 148D. Color of the oldest wood — Grey-brown; nearest to RHS 199B and 199C.Lateral branches.—Quantity of lateral branches — 7. Length of lateral branches — Approximately 5.7 cm. Diameter of lateral branches — Approximately 0.8 cm. Internode length — Approximately 1.7 cm. Attitude — At an average angle of 45 degrees to the main stem. Cross-section — Rounded. Texture — Glabrous; glaucous. Luster — Very slightly glossy. Strength — Strong. Color, juvenile — Yellow-green, nearest to a mixture of RHS 147D and 148D. Color, mature — Green, nearest to RHS 138A. Color at internodes — Green, nearest to RHS 138A.Foliage:Phyllotaxy.—Decussate.Division.—Simple.Attachment.—Sessile.Quantity.—8 per lateral branch.Attitude.—Upward.Lamina.—Shape — Obovate to elliptic. Aspect — Longitudinally convex and lightly carinate; slightly to moderately curled upward, distally. Dimensions — 4.7 cm long and 3.2 cm wide. Thickness — Approximately 0.6 cm. Apex — Acute to broad, bluntly acute. Base — Narrowly cuneate. Margin — Entire; coarsely, not undulated to lightly undulated. Pubescence, texture and luster of the adaxial surface — Glabrous, smooth with glands present, and glossy. Pubescence, texture and luster of the abaxial surface — Glabrous, smooth with glands present, and glossy. Color — Juvenile foliage, adaxial surface — Green, nearest to a mixture of RHS 137A, 137B, NN137A and NN137D; longitudinally striped, blotched, and marbled with yellow-green, nearest to in between RHS 144A and 144B. The laminar glands are greyed-green, nearest to RHS N189B. Juvenile foliage, abaxial surface — Green, nearest to a mixture of RHS 137A and 137B; longitudinally striped, blotched, and marbled with yellow-green, nearest to in between RHS 144A and 144B. The laminar glands are greyed-green, nearest to RHS N189B. Mature foliage, adaxial surface — Nearest to a mixture of green and yellow-green, RHS NN137A, NN137B, 139A, and 147A; longitudinally striped, blotched, and marbled with a combination of yellow-green and greyed-green, particularly towards the apex, nearest to RHS 144A, 144B, 146A, 150D, and 160D. The laminar glands are greyed-green, nearest to RHS N189B. Mature foliage, abaxial surface — Nearest to a mixture of green and yellow-green, RHS 137A, 137B, NN137A, NN137B, 144A, and 144B; longitudinally striped, blotched, and marbled with a combination of yellow-green, green-white, and greyed-green, particularly towards the apex, nearest to RHS 150D, 157A, and 160D. The laminar glands are greyed-green, nearest to RHS N189B.Venation.—No veins are visible.Inflorescence: No flowering has been observed to date.Comparison with the parent plant: Plants of the new cultivar ‘OVWOODS04’ differs from the parent,Crassula‘Crasmada’ (U.S. Plant Pat. No. 28,426), in the following characteristics described in Table 1 below. TABLE 1Characteristic‘OVWOODS04’‘Crasmada’Growth habit.Broad spreading to upright.Broad upright.PlantShorter and broader thanTaller and narrowerdimensions.‘Crasmada’.than ‘OVWOODS04’.Foliage shape.Broad obovate to elliptic.Obovate.GeneralDark green; striped, blotched,Solid dark green.coloration ofand marbled with pale-yellow,the foliage.particularly towards the apex.Comparison with the closest known comparator: Plants of the new cultivar ‘OVWOODS04’ differ from the most similar variety known to the inventor,Crassula‘Minova Magic’ (unpatented in the United States; Community Plant Breeder's Rights number EU37471), in the following characteristics described in Table 2 below. TABLE 2Characteristic‘OVWOODS04’‘Minova Magic’Plant size.Larger than ‘Minova Magic’Smaller than‘OVWOODS04’.Foliage size.Larger than ‘Minova Magic’Smaller than‘OVWOODS04’.Foliage aspect.Longitudinally convex andFlat.lightly carinate; slightly tomoderately curled upward,distally.GeneralDarker green; striped,Light to mediumcoloration ofblotched, and marbled with agreen.the foliage.pale-yellow, particularlytowards the apex.Foliage luster.Less glossy than ‘MinovaGlossier thanMagic’.‘OVWOODS04’. | 6,848 |
PP35569 | The color photographs show typical specimens of the new variety and depict the color as nearly true as is reasonably possible to make the same in a color illustration of this character. It should be noted that colors may vary, for example due to lighting conditions at the time the photograph is taken. Therefore, color characteristics of this new variety should be determined with reference to the observations described herein, rather than from the photographs alone. DETAILED BOTANICAL DESCRIPTION The following detailed description of the ‘TRASEMIS’ variety is based on observations of asexually reproduced progeny. The observed progeny are plants that were 2-4 years of age. The following detailed description concerns plants growing in an open field in Rauscedo (PN), Italy in 2019-2021. The original plant and progeny have been observed growing in a cultivated area in Rauscedo (PN), Italy, with medium texture soil that is rich in skeleton and alluvial in nature. Temperatures in Rauscedo (PN), Italy range from a high of 29° C. to a low of −2° C. Average rainfall is 822 mm per year, with an average rainfall during the growing season (April-September) of 453 mm. The chart used in the identification of colors described herein is The R.H.S. Colour Chart, 6thedition, except where general color terms of ordinary significance are used. The color values were determined in August-September, 2021 under natural light conditions in Rauscedo (PN), Italy.Scientific name:Vitis viniferaL.Parentage:Seed parent.—‘SK-00-1/10’.Pollen parent.—‘TRAMINER’.Plant:Vigor.—High.Growth habit.—Erect or Semi-Erect.Plant height.—2.0-2.2 m.Plant width.—0.8-1.0 m.Trunk diameter.—5-6 cm.Trunk texture.—Striate.Bark coloration.—RHS 177C.Mature cane(woody shoot).—Diameter: Approximately 9.5 mm. Texture: Smooth to Striate. Color: RHS 199B.Shoot:Openness of the shoot tip.—Fully open for young shoot.Distribution of the anthocyanin coloration of the prostrate hairs of the shoot tip.—Piping.Density of prostate hair on the shoot tip.—High.Attitude(before tying).—Erect to Semi-Erect.Color of the dorsal side of internodes.—RHS 144A.Color of the ventral side of internodes.—RHS 144A.Distribution of anthocyanin coloration on the bud scales.—Absent.Tendrils.—Length: Approximately 10.5 cm. Diameter: Approximately 2.04 mm. Color: RHS 152D. Number of Consecutive Tendrils: 2 or less.Leaves:Size.—Length: approximately 175 mm. Width: approximately 179 mm.Shape.—Circular.Number of lobes.—Five.Arrangement.—Upper lateral sinuses are slightly overlapped and the shape of the base is U; the petiole sinus is closed or overlapping.Teeth.—Medium (approximately 8 mm in length and approximately 8 mm in width).Blistering.—Absent or very weak.Density of prostrate hairs.—Medium to dense (between main veins on lower side of blade).Leaf color.—Immature Leaf: Upper Surface: Green (RHS 152A), some with anthocyanin spots (RHS 167C). Lower Surface: RHS 148A. Mature Leaf: Upper Surface: RHS 143A. Lower Surface: RHS 139C.Leaf texture.—Upper Surface: Smooth. Lower Surface: Very weak goffering.Color of veins.—Upper Surface: RHS 141B. Lower Surface: RHS 141C.Petiole.—Color: RHS 144C with stripes of RHS 184C. Length: 80 mm. Diameter: 4 mm. Texture: Smooth.Stem.—Color: RHS 144A (young); 199B (woody shoot). Length: 1.3-1.5 m. Diameter: 10 mm. Length of Internodes: 9 cm. Texture: Smooth.Density of prostrate hairs on petiole.—None or very low.Density of erect hairs on petiole.—None or very low.Depth of upper lateral sinuses.—44-48 mm.Flowers:Size.—Length: 3.2 mm. Diameter: 4.4 mm.Shape.—Trapezoidal.Bud.—Shape: Eye. Size: 2.89 mm×2.89 mm. Color: RHS 144A. Typical Time of Bud Burst: April 8thin Rauscedo (PN), Italy.Petals.—Petals per Flower: 5. Shape: Elongated oval. Color: RHS 144A. Petals are fused into a calyptra. Petal Texture: Upper surface is smooth to striate and under surface is smooth. Size: 3.17 mm long; 1.94 mm wide.Stamen.—Fully developed; 5 in number; 3-3.2 mm in length.Anthers.—RHS 9D in color; 1.2-1.5 mm in length.Pollen.—RHS 9D in color.Gynoecium.—Fully developed.Pistil.—Color: RHS 144A. Stigma Length: 0.7-1 mm. Stigma Shape: The top is open. Number of Styles: 1.Pedicel.—Length: 1.5-4 mm. Diameter: 0.5-0.8 mm. Color: RHS 144C.Sepals.—Length: 0.3-0.5 mm. Width (at base): 0.6-0.7 mm. Shape: Triangle. Color: RHS NN137A.Quantity of inflorescences.—11.1 per plant.Flowers per flowering stem.—180.Date of bloom.—Beginning of June in Rauscedo (PN), Italy.Lastingness of individual blooms.—3 days.Corolla tube color.—RHS 144A.Corolla tube length.—3-3.2 mm.Corolla texture.—Smooth.Calyx.—Color: Upper surface is RHS NN137A and lower surface RHS NN137D. Length: 0.3 mm. Width: 1.5 mm. Shape: Pentagon with beveled corners. Margin: Smooth. Texture: Upper surface and lower surface are smooth.Fragrance.—Sweet fragrance with a delicate note of elder and rose.Fruit:Time of beginning of berry ripening.—August 10 in Rauscedo (PN), Italy.Berry shape.—Globose.Berry size.—Approximately 13 mm in length; and approximately 13 mm in diameter.Pruinosity.—Medium-high.Pulp firmness.—Soft.Flesh color.—RHS 150C.Anthocyanin coloration of flesh.—Absent or very weak; when present, RHS 145C with some RHS 180D.Skin.—Thickness: Thin. Color (without bloom): Yellow rose (RHS 186A).Seed.—Seed Formation: Complete. Number of Seeds: 3-4. Size: 3 mm in length and 1.5-2 mm in width. Color: a mix of RHS 200C and 200D.Berry flavor.—Other than muscat, foxy or herbaceous.Harvest time.—September 4 in Rauscedo (PN), Italy.Bunch length(peduncle excluded).—16 cm.Bunch width.—12.5 cm.Bunch density.—Medium.Length of peduncle of primary bunch.—Approximately 50 mm.Diameter of peduncle of primary bunch.—Approximately 4 mm.Lignificaiton of peduncle.—More than the middle.Berry hilium.—Visible.Use: Wine grape.Disease/pest resistance: Resistant to downy and powdery mildew.Must characteristics:Total soluble solids(°Brix).—21.9.pH.—3.2.Total acidity.—7.7 g/l.Tartaric acid.—6.9 g/l.Malic acid.—2.8 g/l.Production characteristics:Clusters per shoot.—1.2.Grape production.—2289 g/plant.No. of bunches/vine(at harvest).—11.1.Average weight of the bunch.—202 g.Average berry weight.—1.3 g.Pruning wood weight.—616 g/plant.Index of ravaz.—3.7.Wine produced from grapes:Total acidity.—7.0 g/l.Tartaric acid.—3.4 g/l.pH.—3.2.Net extract.—20.9 g/l.Alcohol.—12.7 g/l.Volatile acidity.—0.3 g/l.Reducing sugars.—3.8 g/l. TABLE 3Molecular AnalysisVVVVVVVVVVS2MD5MD7MD25MD27N +NN +N +N +N +N +N +N +N +282861012221414614VVVVVRVRMD28MD32ZAG 62ZAG 79N +N +N +N +N +N +N +N +12185371426614 Table 3 uses international coding based on “N” (see, European project GENRES 081-A basis for the preservation and utilization ofVitisgenetic resources).Phenological characteristics (in Rauscedo (PN), Italy):Flowering.—June 6.Veraison(change of color).—August 10.Maturation.—September 4. | 6,830 |
PP35570 | DETAILED BOTANICAL DESCRIPTION OF THE VARIETY The following-detailed botanical description is based on observations made during the 2022 growing season at Wapato, Wash. Description is of current-season growth from hop crowns planted in 2021. All colors are described according to The RHS Colour Chart (Royal Horticultural Society, London, 6thed. 2015). It should be understood that the characteristics described will vary somewhat depending upon cultural practices and climatic conditions, and will vary with location and season. Quantified measurements are expressed as an average of measurements taken from a number of individual plants of the new variety. The measurements of any individual plant or any group of plants of the new variety may vary from the stated average.Bine:Color.—Yellow-green 145A.Stripe.—Narrow, distinct.Stripe color.—Yellow-green 144A.Anthocyanin coloration.—Absent.Stipule color.—Yellow-green 145A.Stipule direction.—Downward.Diameter.—8 mm to 12 mm, average 10 mm.Average internode distance.—25 cm to 30 cm on mature bine.Form.—Climbing vine with drooping laterals.Leaves:Leaf arrangement.—Opposite.Leaf shape.—Cordate and palmate.Average length(cordate mature leaf).—7 cm to 12 cm.Average width(cordate mature leaf).—6.5 cm to 12 cm.Average length(palmate mature leaf).—12 cm to 15 cm.Average width(palmate mature leaf).—12 cm to 15 cm.Color-upper surface, mature.—Green NN137A.Color-lower surface, mature.—Yellow-green 146A; vein yellow-green N148A.Color-upper surface, immature.—Green NN137A.Color-lower surface, immature.—Yellow-green 146A.Number of leaf lobes.—Usually 3 on palmate leaves.Margin.—Serrate.Average serrations per inch.—5 to 7.Leaf apex.—Acuminate.Pose.—Upward facing.Texture-upper surface.—Glabrous; blistering absent.Texture-lower surface.—Smooth, veins prominent.Petiole length.—2.5 cm to 7 cm; average 5 cm.Petiole diameter.—2 mm to 3 mm.Petiole color.—Yellow-green 146C.Laterals:Length(at about40cm from ground).—Varies, mostly 90 cm to 120 cm.Diameter.—4 mm.Color.—Yellow-green 144A.Internode length.—17 cm to 25 cm; average about 20 cm.Stipule position.—Outward to downward.Stipule color.—Yellow-green 144A.Cones:Time of flowering.—Early, about 1 week before ‘Cascade’.Length.—30 mm to 60 mm; average 45 mm.Diameter.—Average 20 mm.Number of cones per basal lateral node.—15 to 40, usually about 25 to 30.Cone shape.—Elongated with pointed tip.Cone compactness.—Open bracts, somewhat compact.Average cone weight.—900 mg.Bract color.—Alternating darker and lighter bracts; darker bracts yellow-green 144A tip fading to yellow-green 144D at base; lighter bracts yellow-green 144C at tip fading to yellow-green 144D at base.Bract shape.—Ovate.Bract tip shape.—Acute to acuminate.Bract tip position.—Lighter bracts curved inward, darker bracts held out.Bract length.—13 mm to 15 mm.Bract width.—10 mm to 12 mm.Bracteole shape.—Cordate.Bracteole tip shape.—Acuminate.Bracteole length.—10 mm.Bracteole width/diameter.—10 mm.Bracteole color.—Yellow-green 144A.Strig size, compactness.—2 mm diameter, compact.Lupulin gland quantity.—Moderate.Lupulin gland shape.—Rounded, slightly flat.Lupulin color.—Yellow 9A.Yield per acre.—2400.Harvest maturity.—Mid-season (Sep. 1, 2022).Shattering potential at harvest.—Low.Heat tolerance.—Tolerant.Disease resistance/susceptibility.—Good tolerance to powdery mildew (Podosphaera macularis).Aroma.—Pineapple, mango, passionfruit, orange zest.Analytical data:Alpha acids(spectrophotometric method).—7.5% to 9.5%.Beta acids.—5.7%.Total oil.—2.1 ml/100 g.Myrcene(as%of total oils).—54%.Caryophyllene(as%of total oils).—5.2%.Humulene(as%of total oils).—9.7%. | 3,640 |
PP35571 | DETAILED BOTANICAL DESCRIPTION ‘AC/DC x Redneck Wedding 13’ has not been observed under all possible environmental conditions, and the phenotype may vary significantly with variations in environment. The following observations, measurements, and comparisons describe this plant as grown at Salinas, Calif., when grown in the greenhouse, nursery or field, unless otherwise noted. Plants for the botanical measurements in the present application are annual plants. In the following description, the color determination is in accordance with The Royal Horticultural Society (RHS) Colour Chart, 2007 Edition, except where general color terms of ordinary dictionary significance are used. Color designations according to the RHS shall be indicated as “RHS No.” for the respective color designations described herein. TheCannabisplant disclosed herein was derived from female and male parents that are said to have been internally designated as below. ‘AC/DC x Redneck Wedding 13’ is a fertile hybrid derived from a controlled cross between two proprietary cultivars denominated as ‘AC/DC’ (Not Patented) (pollen accepter; female parent) and ‘Redneck Wedding’ (Not Patented) (pollen donor; male parent). The initial cross between two parental cultivars was made in February 2022. Of the filial generation, approximately 29 seeds were germinated. The phenotypic criteria to select a new and distinctCannabiscultivar disclosed herein is as follows: leaf structure having larger leaves with deep serrations, tighter flower structure, balanced THCA and CBD levels, pleasant aroma and taste. Also, the first asexual propagation by stem cuttings of ‘AC/DC x Redneck Wedding 13’ occurred on Jun. 5, 2022 in Spokane Valley, Washington. The following traits in combination further distinguish theCannabiscultivar ‘AC/DC x Redneck Wedding 13’ from check varieties, which are the female and male parents of theCannabiscultivar disclosed and claimed herein. Tables 2 to 6 present phenotypic traits and/or characteristics of ‘AC/DC x Redneck Wedding 13’ compared to those of the parental check varieties, ‘AC/DC’ and ‘Redneck Wedding’, as follows. All plants were raised together and evaluated between 17 to 56 days old (i.e., the day range for propagation, vegetative, and flowering times). 17 days of life is the approximate end of the vegetative stage as flowering sites begin to form between days 18-21. It is further understood that the measurements in tables 2 through 6 are provided as an average measurement unless given in the form of a range or as otherwise indicated. TABLE 2General CharacteristicsParentalParentalVarietyVariety(‘RedneckCharac-(‘AC/DC’)Wedding’)teristicsNew Variety(Female Plant)(Male Plant)Plant lifeAn herbaceousAn herbaceousAn herbaceousformsplant (herb)plant (herb)plant (herb)Plant growthAn upright,An upright,A tall, upright,habittap-rootedbushy,tap-rootedannual plant;tap-rootedannual plantcolumnarannual plantPlant origin‘AC/DC’ בAC/DC’‘Redneck‘RedneckWedding’Wedding’;SeedPlant propa-AsexualAsexualAsexualgationpropagatedpropagatedpropagatedby cloningby cloningby cloningPropagationEasyModerateEasyeaseAverage16 in at 17 days23 in18 inHeight(vegetative(vegetative(vegetativestage); 55 instage)stage)(flowering)Average14 in at 17 days19 in23 inWidth(vegetative(vegetative(vegetativestage); 26 in.stage)stage)(flowering)Plant vigorModerateModerateEasyTime to55 days56 daysN/AharvestTime to9 daysN/AN/ArootResistanceGoodPoorModerateto pest ordiseaseDiseaseBelowAverage to High;AveragesusceptibilityAverage;Susceptible toResistantpowdery mildewin the orderEyrsiphales, namely,Erysiphe necator,Golovinomycescichoracearum, andOidium cannabisGeneticallyNoNoNomodifiedorganism(GMO) The new variety ofCannabisplant has several differences compared to its parental varieties (‘AC/DC’ and ‘Redneck Wedding’) in terms of growth, development, and resistance characteristics. While all three plants are herbaceous and propagated asexually by cloning, the new variety exhibits an upright, tap-rooted, and columnar growth habit, as opposed to the upright, bushy, tap-rooted growth habit of the female parental variety, and the tall, upright, tap-rooted growth of the male parental variety. In terms of plant dimensions, the new variety is shorter and narrower than the parental varieties during the vegetative stage, with a height of 16 inches and a width of 14 inches at 17 days old. In comparison, the female parental variety reaches 23 inches in height and 19 inches in width, and the male parental variety reaches 18 inches in height and 23 inches in width during the vegetative stage. A significant difference between the new variety and the parental varieties is their resistance to pests and diseases. The new variety has good pest resistance and below-average disease susceptibility, making it more resistant than the parental varieties. The female parental variety has poor pest resistance and is susceptible to powdery mildew caused byErysiphe necator, Golovinomyces cichoracearum, andOidium cannabis. The male parental variety has moderate pest resistance and average disease susceptibility. The leaf morphology is of particular importance in theCannabisplant, as it can provide important information about the plant's growth habits, potential yield, and other traits. In the below Table 3, a comprehensive breakdown of the leaf characteristics of the new cultivar, as well as its parent plants, is shown. TABLE 3Leaf CharacteristicsParentalParentalVarietyVariety(‘RedneckCharac-(‘AC/DC’)Wedding’)teristicsNew Variety(Female Plant)(Male Plant)LeafNormal spiraling;NormalNormalarrange-Alternatespiraling;spiraling;mentwith averageAlternateAlternatenode spacingof 1.5 in at17 days oldLeaf shapePalmatelyAlternate;Alternate;compound withPalmatelyPalmatelyfive main leafletscompoundcompoundand two rearwith five towith five toleaflets.nine leaflets.nine leaflets.LeafLinearLinearLinearstructurelanceolatelanceolatelanceolateleaflets; thinleaflets; thinleaflets; thinleaflets withleaflets withleaflets withminimal curlminimal curlminimal curland minimaland minimaland minimalconcavityconcavityconcavityLeaf marginsSpread ofN/AN/A1.5 in to 2 inbetween apexof leafletsSerrationDeep serration;DeepRegularspread ofserrationserrationapproximately5 mmLeaf hairsNot visuallyNot visuallyNot visuallypresent;present;present;Extremely fineExtremely fineExtremely fineLeaf length8-10in4 in to 5 in4 in to 5 inwith petioleLeaf width5 in at4 in to 5 in4 in to 5 in17 days oldPetiole3-5inN/AN/AlengthPetiole color59C59C59C(PHS No.)Intensity ofAverageAverageAveragepetiole(vegetative(vegetative(vegetativeanthocyaninstage); Intensestage)stage)(late floweringstage)Stipule0.5 in at0.5in0.5inlength17 days oldStipule shapeLinear-Linear-Linear-lanceolate,lanceolatelanceolatewith anarrowingtip and slightcurvatureStipule color134D134D134D(RHS No.)Average No.757of leafletsMiddle5in4in4inlargest(longest)leaflet lengthMiddle1.5in1in1inlargest(longest)leaflet widthMiddle10:34:14:1largest(longest)leafletlength/width ratioNo. teeth of454040middleleaflet(average)Leaf (upper135C135C135Cside) color(RHS No.)Leaf (lower135D135D135Dside) color(RHS No.)Leaf glossi-MatteMatteMattenessVein/midribCentrallyCentrallyCentrallyshapelocated;located;located;Narrow-shallowNarrow-Narrow-on top; thickshallowshallowand round onon top; thickon top; thickunderside withand round onand round ona depth ofunderside withunderside withmedium to deepa mediuma mediumdepthdepthVein/midrib137D137D137Dcolor (RHSNo.)AromaMild, slightlyStrong andBright, citrusyvinegar inpungent aromasmell that isleaf but strongthat isreminiscentand sweetreminiscent ofof oranges,in stema ‘gassy’ aromalemons, orother tart fruitsand a ‘tangy’aroma The new variety ofCannabis, ‘AC/DC x Redneck Wedding 13’ has some differences in leaf characteristics when compared to its parental varieties, ‘AC/DC’ female plant and ‘Redneck Wedding’ male plant. The new variety has a palmately compound leaf with five main leaflets and two rear leaflets, while the parental varieties have five to nine leaflets. The new variety has a larger leaf size, with a leaf length of 7 inches and a width of 5 inches at 17 days old, compared to the parental varieties with a leaf length of 4-5 inches and a width of 4-5 inches. The new variety has a slightly different aroma, being mild and slightly vinegar in the leaf but strong and sweet in the stem, while the parental varieties have a strong and pungent aroma that is reminiscent of a ‘gassy’ aroma and a bright, citrusy smell that is reminiscent of oranges, lemons, or other tart fruits, respectively. Overall, the new variety exhibits some distinct differences in leaf characteristics compared to its parental varieties. Stem morphology is an important aspect ofCannabisplants, as it can provide valuable information about the plant's growth habits, strength, and overall health. In the below Table 4, a detailed breakdown of the stem characteristics of the new cultivar, as well as its parent plants, is shown. TABLE 4Stem CharacteristicsParentalParentalVarietyVariety(‘RedneckCharac-(‘AC/DC’)Wedding’)teristicsNew Variety(Female Plant)(Male Plant)Stem ShapeRounded;Rounded;Rounded;ribbedribbedribbedStem0.25 in at1.5in1.5indiameter17 days oldat base(vegetative stage);1.5 in-2 in(flowering)Stem color137C137C137C(RHS No.)Depth ofMedium toMediumMediummain stemDeepribs/groovesStrengthHighModerateModerateTextureSmooth, slightN/AN/Aelevations andraised nodules,fine hairsInternode2 in1in1inlength(average)Node1.5 in to 2 in1in1inSpacingStemMonopodialPolycho-Sympodialbranchingtomous The new variety ofCannabisplant has several differences compared to its parental varieties in terms of stem characteristics. Although all three varieties have a rounded and ribbed stem shape and share the same stem color (RHS No. 137C), there are some distinctions in their other features. First, the depth of the main stem ribs/grooves in the new variety is medium to deep, compared to the medium depth in both parental varieties. Additionally, the new variety exhibits higher stem strength compared to the moderate strength of the parental varieties. The internode length in the new variety is longer, averaging 2 inches, as opposed to the 1-inch internode length found in both parental varieties. Similarly, the node spacing in the new variety is wider, ranging from 1.5 to 2 inches, while the parental varieties have a consistent 1-inch node spacing. Lastly, the new variety has a monopodial stem branching pattern, contrasting with the polychotomous branching of the female parental variety, ‘AC/DC’, and the sympodial branching of the male parental variety ‘Redneck Wedding’. Monopodial stem branching can be a more desirable growth pattern in certain situations due to its various advantages for plant cultivation. Characterized by a central, dominant stem growing vertically with lateral branches emerging from the main stem, monopodial branching allows for efficient use of vertical space. This can be particularly beneficial in limited space environments, such as indoor or greenhouse cultivation. The vertical growth pattern also enables better light penetration throughout the plant, as the lateral branches tend to spread out along the main stem. Improved light distribution can lead to increased photosynthesis, overall vigor, and higher yields. Moreover, monopodial branching can provide better air circulation around the plant due to its open structure, which helps reduce the risk of fungal infections and other diseases that thrive in humid, stagnant environments. Monopodial plants are often easier to prune and maintain due to their straightforward growth pattern, and pruning can be critical for optimizing plant growth, yield, and overall health. The vertical growth and better light penetration in monopodial plants can potentially lead to higher yields, as more energy can be directed to flower and fruit production. However, the desirability of monopodial stem branching depends on the specific plant species, cultivation goals, and environmental conditions, making it essential to consider these factors when choosing between plants with different branching patterns. Inflorescence morphology is a critical feature ofCannabisplants, as it can provide valuable information about the plant's potential yield, cannabinoid profile, and other important traits. In the below Table 5, a comprehensive breakdown of the inflorescence characteristics of the new cultivar, as well as its parent plants, is shown. TABLE 5Inflorescence (Female/Pistillate Flowers) CharacteristicsParentalParentalVarietyVariety(‘RedneckCharac-(‘AC/DC’)Wedding’)teristicsNew Variety(Female Plant)(Male Plant)FloweringIndoors,Indoors,Indoors,(blooming)blooming stage,blooming stage,blooming stage,habitthe femalethe femalethe femalecannabis plantcannabis plantcannabis plantundergoes aundergoes aundergoes acritical transitioncritical transitioncritical transitionfrom vegetativefrom vegetativefrom vegetativegrowth togrowth togrowth toreproductivereproductivereproductivedevelopment,development,development,triggered bytriggered bytriggered byphotoperiodicphotoperiodicphotoperiodiccues, 12 hourscues, 12 hourscues, 12 hoursdaylight/12daylight/12daylight/12hours darkness.hours darkness.hours darkness.The plant beginsThe plant beginsThe plant beginsto produce small,to produce small,to produce small,white pistils atwhite pistils atwhite pistils atthe nodes wherethe nodes wherethe nodes wherethe leaves meetthe leaves meetthe leaves meetthe stem, whichthe stem, whichthe stem, whichdevelop intodevelop intodevelop intomature flowersmature flowersmature flowersProportion100%100%0%of femaleplantsInflore-Apical meristemApical meristemApical meristemscencepositionFlowerRacemeRacemeN/Aarrange-mentNo. of40-5050-601000+flowersper plantFlowerCompact;Open;Actino-shapedense;Spread out;morphicStrobilusStrobilusFlower3 in to 4 inN/AN/A(individualpistillate)lengthFlower2 in to 3 inN/AN/AdiameterBract shapeObovateObovateObovateBract size¼ in at¼ in¼ inday 17(vegetative(vegetativestate)state)Bract color140A140A140A(RHS No.)Calyx shapeUndulateN/AN/ACalyx color134C134C134C(RHS No.)Stigma shapeFiliformFiliformN/AStigma length⅛ in atN/AN/Aday 17Stigma color155DN/AN/A(RHS No.)Corolla shapeOvularOvularRoundCorolla size0.6-0.8 mm0.2-0.4 mm0.6-0.8 mmCorolla colorN144C143B145A(RHS No.)TrichomeBulbousN/AN/AshapeTrichome155DN/AN/Acolor (RHSNo.)(at har-vest)Other typesCapitate-N/AN/Aof trichomesstalkedTerminal budPyramidalN/AN/AshapeTerminal bud142AN/AN/Acolor (RHSNo.)PedicelN/AN/AN/AStaminateN/AN/AN/AshapePollenN/AN/AMicrospores;descriptionSmall grain/yellowishgreenSeed shapeOblong;Oblong;Oblong;ReniformReniformReniformSeed size/2-4 mm2-4 mm2-4 mmlengthMarblingNoneNoneNoneof seedPetal descrip-Sym-N/AN/AtionmetricalPetal arrange-WhorledN/AN/AmentMax THC7.1%1.02%N/AcontentMax CBD11.0%20.03%N/Acontent The new variety ofCannabisplant shares several similarities with the parental varieties, such as flowering habits, inflorescence position, and bract shape, size, and color. However, there are noticeable differences as well. The flower arrangement of the new variety is compact, dense, and strobilus, compared to the open, spread out, and strobilus shape of the female parental variety, ‘AC/DC’, and the actinomorphic shape of the male parental variety ‘Redneck Wedding’. In terms of the number of flowers per plant, the new variety produces slightly fewer flowers, with 40-50 per plant, while the female parental variety produces 50-60, and the male variety produces over 1000 flowers per plant. The new variety also has unique measurements for individual pistillate length (⅜ in at day 17) and flower diameter (¾ in at day 17), as well as a distinctive corolla shape (ovular) and size (0.6-0.8 mm) compared to the female parental variety (0.2-0.4 mm). Furthermore, it exhibits bulbous trichome shape and a pyramidal terminal bud shape, with a terminal bud color of RHS No. 142A. When it comes to cannabinoid content, the new variety has a maximum THC content of 7.1% and a maximum CBD content of 11.0%. This is different from the female parental variety, which has a lower maximum THC content of 1.02% and a higher CBD content of 20.03%. The male parental variety does not have available data on THC and CBD content. While leaf, stem, and inflorescence morphology are important features ofCannabisplants, there are other characteristics that can also provide valuable insights into a cultivar's growth habits and potential uses. In Table 6, below, a comprehensive breakdown of additional miscellaneous characteristics of the new cultivar, as well as its parent plants, is shown. The detailed analysis of these characteristics presented in this table allows growers and enthusiasts to better understand and appreciate the unique properties of this cultivar. The cultivar's diverse set of characteristics make it an attractive choice for a range of applications, including, but not limited to, medicinalCannabismarkets. This new and distinctCannabiscultivar is expected to have a significant impact on the industry and may become a leading player in the globalCannabismarket. TABLE 6Other CharacteristicsParentalParentalVarietyVariety(‘Redneck(‘AC/DC’)Wedding’)CharacteristicsNew Variety(Female Plant)(Male Plant)Time period and56 days56 days28 tocondition of56 daysflowering/bloomingHardiness of plantHighHighHighBreaking actionFlexibleFlexibleFlexibleRooting rate after95%95%95%cutting/cloningTypes of cutting forStemStemStemcloning (stem, leaf,root, etc.)Shipping quality ifHardyHardyHardyavailableStorage life if availableN/AN/AN/AProductivity of flowerN/AN/AN/Aif availableMarket useMedicinalN/AN/A The new variety and the parental variety, ‘AC/DC’, have a similar time period and condition of flowering/blooming of 56 days, while the male parental variety, ‘Redneck Wedding’, has a shorter period of 28 to 56 days. The hardiness of all three varieties is high, and their breaking action is flexible. The rooting rate after cutting/cloning is 95% for all three varieties, and stem cutting is the method used for cloning. The shipping quality and storage life are not available, and the productivity of flower is not applicable. The market use of the new variety is medicinal, while the parental varieties do not have a specified market use in the table. The following is a detailed description of the new cultivar of ‘AC/DC x Redneck Wedding 13’. The following description is for plants that are 17-55 days old as of the time of the measurements.General description:Classification:Denomination.—‘AC/DC x Redneck Wedding 13’.Species.—Cannabishybrid.Origin, form, and growth characteristics:Origin.—‘AC/DC’ x ‘Redneck Wedding’; Seed.Propagation.—Asexual propagated by cloning, stem cuttings.Propagation ease.—Easy.Plant:Height.—16 in at 17 days (vegetative stage); 55 in (flowering).Width.—14 in at 17 days (vegetative stage); 26 in. (flowering).Vigor.—Moderate.Pest resistance.—Good.Disease susceptibility.—Below Average; Resistant.Time to harvest.—55 days.Time to root.—9 days.Genetically modified organism.—No.Leaf/foliage:Structure.—Linear lanceolate leaflets; thin leaflets with minimal curl and minimal concavity.Shape.—Palmately compound with five main leaflets and two rear leaflets.Arrangement.—Normal spiraling; Alternate with average node spacing of 1.5 in at 17 days old.Margin.—Spread of 1.5 in to 2 in between apex of leaflets.Serration.—Deep serration; spread of approximately 5 mm.Hair.—Not visually present; Extremely fine.Leaf(with petiole)length at maturity.—8-10 inches.Leaf width at maturity.—5 in.No. of leaflets.—7.Middle largest(longest)leaflet length.—5 in.Middle largest(longest)leaflet width.—1.5 in.Middle largest(longest)leaflet length/width ratio.—10:3.No. teeth of middle leaflet(average).—45.Leaf color(upper side).—135C.Leaf color(lower side).—135D.Leaf glossiness.—Matte.Vein/midrib shape.—Centrally located; Narrow-shallow on top; thick and round on underside with a depth of medium to deep.Vein/midrib color.—137D.Petiole:Petiole length.—3 in to 5 in.Petiole color.—59C.Intensity of petiole anthocyanin.—Average (vegetative stage); Intense (late flowering stage).Stipule length.—0.5 in at 17 days old.Stipule shape.—Linear-lanceolate, with a narrowing tip and slight curvature.Stipule color.—134D.Stem:Shape.—Rounded; ribbed.Diameter.—0.25 in at 17 days old (vegetative stage); 1.5 in-2 in (flowering).Color.—137C.Strength.—High.Texture.—Smooth, slight elevations and raised nodules, fine hairs.Depth of main stem ribs/grooves.—Medium to Deep.Internode length.—2 in.Stem branching.—Monopodial.Node spacing.—1.5 in to 2 in.Inflorescence:Blooming/flowering habit.—Indoors, blooming stage, the femaleCannabisplant undergoes a critical transition from vegetative growth to reproductive development, triggered by photoperiodic cues, 12 hours daylight/12 hours darkness. The plant begins to produce small, white pistils at the nodes where the leaves meet the stem, which develop into mature flowers.Inflorescence position relative to foliage.—Apical meristem.Flower arrangement.—Raceme.No. of flowers per plant.—40 to 50.Flower:Shape.—Compact; dense; Strobilus.Flower(individual pistillate length).—3 in to 4 in.Flower(raceme)diameter.—2 in to 3 in.Corolla shape.—Ovular.Corolla size.—0.6-0.8 mm.Corolla color.—N144C.Bract shape.—Obovate.Bract size.—¼ in at day 17.Bract color.—140A.Stigma shape.—Filiform.Stigma length.—⅛ in at day 17.Stigma color.—155D.Trichome shape.—Bulbous.Trichome color.—155D.Other types of trichome.—Capitate-stalked.Cola(terminal bud).—Pyramidal.Cola(terminal bud)color.—142A.Pedicel.—N/A.Pedicel color.—N/A.Staminate flower.—N/A.Pollen.—N/A.Seed shape.—Oblong; Reniform.Seed size/length.—2 to 4 mm.Marbling of seed.—None.Petal.—Symmetrical.Petal arrangement.—Whorled.Other characteristics:Aroma.—Mild, slightly vinegar in leaf but strong and sweet in stem.Flowering/blooming period.—56 days.Hardiness.—High.Breaking action.—Flexible.Rooting rate after cutting/cloning.—95%.Types of cutting for cloning.—Stem.Shipping quality.—Hardy.Storage life.—N/A.Productivity of flower.—N/A.Market use.—Medicinal. The above new and distinct cultivar, ‘AC/DC x Redneck Wedding 13,’ is distinguishable from related cultivars in that it exhibits unique leaf characteristics, balanced THC and CBD levels, a pleasant aroma and taste, an upright monopodial growth habit, and tight, compact flowering. This new variety displays large leaves with deep serrations, offering a symmetrical and visually appealing structure. Additionally, the leaves are known for their dark color, which contributes to the plant's overall aesthetic. One of the key features that sets the ‘AC/DC x Redneck Wedding 13’ cultivar apart from prior and related cultivars is its balanced THC and CBD levels. This characteristic allows for a more desirable combination of medicinal properties, catering to a broader range of users and applications. A more balanced ratio of THC and CBD offers significant medicinal benefits, as it can provide effective relief for various symptoms and conditions without inducing an overwhelming psychoactive effect. The pleasant aroma and taste associated with this new variety further differentiate it from its predecessors, making it more appealing to both growers and consumers. These sensory attributes can play a crucial role in the overall enjoyment and satisfaction derived from the plant, contributing to its marketability and popularity. Another noteworthy aspect of the ‘AC/DC x Redneck Wedding 13’ cultivar is its upright monopodial growth habit. This growth pattern provides several advantages, including efficient use of vertical space, improved light penetration, improved air circulation, and easier pruning and maintenance. The monopodial growth habit allows for more effective light distribution throughout the plant, which can lead to increased photosynthesis and energy production. As a result, this cultivar can potentially produce higher yields compared to plants with other growth patterns. Lastly, the tight and compact flowering of this new cultivar sets it apart from related varieties. The dense floral structure not only contributes to the plant's visual appeal but can also result in higher concentrations of active compounds and a more potent final product. When compared to the knownCannabiscultivars, such asCannabiscultivars denoted as ‘LEMON CRUSH OG’ (U.S. Plant Pat. No. PP31,535 P3) and ‘UNIQUE FLOWER ORIGINAL HAZE’ (U.S. Plant Pat. No. PP34,802 P2), ‘AC/DC x Redneck Wedding 13’ exhibits a balanced THC:CBD profile. Specifically, ‘AC/DC x Redneck Wedding 13’ exhibits approximately 7.1% THC and approximately 11% CBD; whereas ‘LEMON CRUSH OG’ exhibits approximately 18.77-23.19% THC and approximately 0.00% CBD and ‘UNIQUE FLOWER ORIGINAL HAZE’ exhibits approximately 17.38% THC and approximately 0.1% CBD. As a result, the balances terpene profile of ‘AC/DC x Redneck Wedding 13’ makes it a more desirable medicinalCannabiscultivar for providing increase medicinal benefit without the psychoactive effect typically exhibited byCannabiscultivar with high THC and low CBD content. In terms of leaf characteristics, ‘AC/DC x Redneck Wedding 13’ appears more uniformly spread with a more balanced overall length to width ration of the entire leaf than that of ‘LEMON CRUSH OG’ which appears elongated. As compared to ‘UNIQUE FLOWER ORIGINAL HAZE’, ‘AC/DC x Redneck Wedding 13’ has less leaflets and wider leaflets than the known cultivar. Additionally, ‘AC/DC x Redneck Wedding 13’ has deeper serrations with more teeth than ‘LEMON CRUSH OG’ and ‘UNIQUE FLOWER ORIGINAL HAZE’ making it more aesthetically pleasing and a more desirable cultivar. Overall, the unique combination of leaf characteristics, balanced cannabinoid levels, pleasant aroma and taste, upright monopodial growth habit, and tight, compact flowering make the ‘AC/DC x Redneck Wedding 13’ cultivar a distinguishable and superior choice compared to prior and relatedCannabiscultivars known to the Inventor. The potential for higher yields, combined with the medicinal benefits offered by balanced THC and CBD levels, make this cultivar particularly advantageous for both growers and consumers seeking a versatile and effectiveCannabisstrain. | 26,271 |
PP35572 | DETAILED BOTANICAL DESCRIPTION The aforementioned photographs and following observations and measurements describe plants grown during the autumn in 10.5-cm containers in a glass-covered greenhouse in Heemskerk, The Netherlands and under cultural practices typically used in commercialPhalaenopsisproduction. Plants were 18 months old when the photographs and description were taken. During the first twelve months of production of the plants, day and night temperatures averaged 27 C. During the final six months of production of the plants, day temperatures ranged from 20 C to 22 C and night temperatures ranged from 18 C to 20 C. During the production of the plants, light levels ranged from a minimum of 5,000 lux to a maximum of 10,000 lux. In the following description, color references are made to The Royal Horticultural Society Colour Chart, 2015 Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:Phalaenopsis hybrida‘Wiggle Giggle’.Parentage:Female, or seed, parent.—Phalaenopsis hybrida‘Sogo Berry’, not patented.Male parent.—Phalaenopsis hybrida‘Little Gem Stripes’, not patented.Propagation:Type.—By in vitro meristem propagation.Time to initiate roots, summer and winter.—About two weeks at temperatures about 28 C to 30 C.Time to produce a rooted young plant, summer and winter.—About 20 to 25 weeks at temperatures about 28 C to 30 C.Root description.—Thin, fibrous; typically light yellowish white in color; actual color of the roots is dependent on substrate composition, water quality, fertilizer, substrate temperature and age of roots.Rooting habit.—Freely branching; medium density.Plant description:Plant form and growth habit.—Herbaceous epiphyte; relatively compact and broadly upright plant habit with typically three inflorescences per plant, each inflorescence with numerous flowers; monopodial; moderately vigorous growth habit and moderate growth rate.Plant height, substrate level to top of foliar plane.—About 15.9 cm.Plant height, substrate level to top of inflorescences.—About 27 cm.Plant diameter or spread.—About 26.4 cm.Leaf description:Arrangement and quantity.—Distichous, simple; sessile; about five leaves per plant.Length.—About 17.6 cm.Width.—About 6.4 cm.Aspect.—Mostly upright to outwardly arching.Shape.—Narrowly obovate to narrowly elliptic-oblong; slightly carinate.Apex.—Unequal acute to short apiculate.Base.—Sheathing. Sheath length: About 1.8 cm. Sheath width: About 1.4 cm. Sheath color: Close to 144A; towards the margins, close to 143A and 143B.Margin.—Entire; not undulate.Texture and luster, upper surface.—Smooth, glabrous; slightly glossy.Texture and luster, lower surface.—Smooth, glabrous; moderately glossy.Venation pattern.—Camptodromous.Color.—Developing leaves, upper surface: Close to a blend of NN137B and 143A. Developing leaves, lower surface: Close to 146B; towards the margins, close to 146A. Fully expanded leaves, upper surface: Close to 137A and NN137B; venation, close to NN137B. Fully expanded leaves, lower surface: Close to 146B; venation, close to a blend of 146A and 146B.Inflorescence description:Appearance and flowering habit.—Showy zygomorphic flowers arranged on axillary branched racemes; typically three inflorescences per plant; each inflorescence with about 17 flowers; flowers face outwardly on arching inflorescences supported by upright peduncles; flowers with three petals, two lateral petals and one center petal transformed into a labellum and three sepals.Fragrance.—None detected.Time to flower.—Plants begin flowering about six months after planting; plants flower naturally during the winter into the spring.Flower longevity.—Long flowering period, individual flowers maintain good substance for about ten weeks on the plant; flowers not persistent.Inflorescence length(lowermost flower to inflorescence apex).—About 16 cm.Inflorescence width.—About 10.9 cm.Flower buds.—Height: About 1.8 cm. Diameter: About 1.3 cm by 1.5 cm. Shape: Broadly ovate. Color: Close to N144D and 152D; margins of immature sepals, close to N77B.Flower size.—About 4.4 cm (vertical) by 4.7 cm (horizontal).Flower depth.—About 2.2 cm.Petals, quantity and arrangement.—Three, two lateral petals and one center petal transformed into a labellum.Lateral petals.—Length: About 2.6 cm. Width: About 3 cm. Shape: Roughly reniform to close to lunate. Apex: Obtuse to rounded. Margin: Entire. Texture and luster, upper and lower surfaces: Smooth, glabrous, velvety; matte. Color: When opening, upper surface: Close to a blend of N78A and N79C; narrowly edged, close to N80A; venation, close to N79C. When opening, lower surface: Close to N80A; center, close to N80B; narrowly edged, close to N80A. Fully opened, upper surface: Close to N78A; narrowly edged, close to N80C; venation, close to a blend of N78A and N79C; color does not change with subsequent development. Fully opened, lower surface: Close to N80A; center, close to N80B; narrowly edged, close to N80C; color does not change with subsequent development.Labella.—Appearance: Three-parted with two lateral lobes and a central lobe. Length, lateral lobes: About 1.5 cm. Width, lateral lobes: About 1.1 cm. Length, central lobe: About 2.1 cm. Width, central lobe: About 4 mm to 18 mm. Length, cirrose tips: About 3 mm. Shape, lateral lobes: Obovate. Shape, central lobe: Deltoid to trullate with an elongated apex. Apex, lateral lobes: Obtuse. Apex, central lobe: Cleft with two curved cirrose apices. Margins, lateral and central lobes: Entire. Texture and luster, lateral and central lobes, upper and lower surfaces: Smooth, glabrous, moderately velvety; matte. Callosities: Located at the base of the labellum and attachment point of the lateral petals; about 4 mm in length, about 5 mm in width and about 4 mm in height. Color: When opening, upper surface: Lateral lobes: Close to a blend of N78A and N79C; towards the base, close to 71A and at the base, close to 155D. Central lobe: Close to N79C; at the base, close to 155D; radial stripes, close to N79C; cirrose apices, close to N80D to lighter than N80D. Callosities: Close to 12B with fine dots, close to 180B. When opening, lower surface: Lateral lobes: Close to a blend of N78A and N79C; stripes at the base, close to 71A and 155D. Central lobe: Close to N79C; towards the center and apex, close to N78A; center, blotched with close to 11D and 76B; at the base, close to 156D; cirrose apices, close to N80D to lighter than N80D. Fully opened, upper surface: Lateral lobes: Close to a blend of N78A and N79C; towards the base, close to 71A and at the base, close to 155D. Central lobe: Close to N79C; at the base, close to 155D; radial stripes, close to N79C; cirrose apices, close to N80D to lighter than N80D. Callosities: Close to 13B with fine dots, close to 180B. Fully opened, lower surface: Lateral lobes: Close to a blend of N78A and N79C; stripes at the base, close to 71A and 155D. Central lobe: Close to N79C; towards the center and apex, close to N78A; center, blotched with close to 155D and 76B; at the base, close to 156D; cirrose apices, close to N80D to lighter than N80D.Sepals.—Quantity and arrangement: Three, one upper dorsal sepal and two lower lateral sepals. Length, dorsal and lateral sepals: About 2.7 cm. Width, dorsal sepal: About 2.2 cm. Width, lateral sepal: About 2.1 cm. Shape, dorsal and lateral sepals: Broadly ovate. Apex, dorsal sepal: Shallowly and broadly retuse. Apex, lateral sepals: Obtuse. Base, dorsal and lateral sepals: Truncate. Margin, dorsal and lateral sepals: Entire. Texture and luster, dorsal and lateral sepals, upper and lateral surfaces: Smooth, glabrous, moderately velvety; matte. Color, dorsal sepal: When opening, upper surface: Close to a blend of N78A and N79C; towards the margins, close to N78A and narrowly edged, close to N80D; venation, close to N79C. When opening, lower surface: Close to 145C; fine dots, close to 77B; towards the margins, close to 77B and narrowly edged, close to N80D. Fully opened, upper surface: Close to N78A; towards the margins, close to N78B and narrowly edged, close to N80D; venation, close to N79C; color does not change with subsequent development. Fully opened, lower surface: Close to 196B; towards the margins, close to 77B and narrowly edged, close to N80D; color does not change with subsequent development. Color, lateral sepals: When opening, upper surface: Upper half, close to N78A and lower half, close to N79C; blotch at the base of the lower half, close to 157B; fine dots, close to N79C; narrowly edged with close to N80D; venation, close to N79C. When opening, lower surface: Close to 145B; towards the margins, lighter than close to a blend of 77B and 77D and narrowly edged, close to N80D. Fully opened, upper surface: Upper half, close to a blend of N78A and N79C and lower half, close to N79C; blotch at the base of the lower half, close to 157B; fine dots, close to N79C; narrowly edged with close to N80D; venation, close to N79C; color does not change with subsequent development. Fully opened, lower surface: Close to 145B to 145C; towards the margins, lighter than close to 77B and narrowly edged, close to N80D; color does not change with subsequent development.Peduncles.—Length: About 39.7 cm. Diameter: About 5 mm. Strength: Strong. Aspect: Upright to outwardly arching. Texture and luster: Smooth, glabrous; matte. Color: Close to 138A; densely covered with fine dots and marbling, close to 137A.Pedicels.—Length: About 2.3 cm. Diameter: About 3 mm. Strength: Moderately strong. Aspect: About 90 degrees from peduncle axis. Texture and luster: Smooth, glabrous; matte. Color: Close to 144B; distally, close to 145B.Reproductive organs.—Androecium: Column length: About 8 mm. Column width: About 5 mm. Column color: Close to N78A; distally, tinged with close to NN78A. Pollinia quantity: Two. Pollinia diameter (per two pollinia): About 2 mm. Pollinia color: Close to 23A. Gynoecium: Stigma length: About 3 mm. Stigma width: About 4 mm. Stigma shape: Reniform. Stigma color: Close to 76C to 76D. Ovary length: About 7 mm. Ovary diameter: About 1 mm. Ovary color: Close to N144B. Seeds and fruits: To date, seed and fruit development have not been observed on plants of the newPhalaenopsis.Pathogen & pest resistance: To date, plants of the newPhalaenopsishave not been shown to be resistant to pathogens and pests common toPhalaenopsisplants.Temperature tolerance: Plants of the newPhalaenopsishave been observed to tolerate high temperatures about 40 C and are suitable for USDA Hardiness Zones 10 to 12. | 10,576 |
PP35573 | DESCRIPTION OF THE NEW VARIETY The following detailed description sets forth the distinctive characteristics of ‘PHA407209’. Plants of the newPhalaenopsishave not been observed under all possible environmental conditions. The phenotype may vary somewhat with variations in environment such as temperature, light intensity, and day length, without, however, any variance in genotype. The chart used in the identification of colors described herein is The R.H.S. Colour Chart of The Royal Horticultural Society, London, England, 2015 edition, except where general color terms of ordinary significance are used. The color values were determined under 4000-6000 lux natural light in a greenhouse in Bleiswijk, the Netherlands. Observations and measurements were made in April 2023 on flowering plants which were planted in 12-centimeter (diameter) pots. After in vitro propagation, the plants were grown in nursery trays for 20-24 weeks, followed by transplantation to 12-centimeter pots and grown in a greenhouse between 27° C. to 29° C. for 30 weeks, continued by a cooling period of 8 weeks between 18° C. to 20° C. and 12 weeks in a greenhouse of 21° C. Flowering occurs after 50 weeks in 12-centimeter pots. DETAILED BOTANICAL DESCRIPTION Classification:Family.—Orchidaceae.Botanical.—Phalaenopsishybrid.Common name.—Moth orchid.Variety name.—‘PHA407209’.Parentage:Female parent.—Phalaenopsiscultivar ‘00001-4992’ (unpatented).Male parent.—Phalaenopsiscultivar ‘12-050832-0002’ (unpatented).Propagation:Type.—Meristem tissue culture.Roots:Root description.—Greyed-green colored roots (a color in between RHS 190B and RHS 190C) with branching lateral roots having yellow-green (RHS 145B) with a touch of purplish-red colored root tips (RHS N77B).Plant:Crop time to flowering.—Following asexual propagation (in vitro), the rooted cuttings grow for 20-24 weeks. After transplantation into 12-cm pots, the plants are finished after 48 to 50 weeks.Growth habit of the peduncle.—Upright to slightly pendent with panicle inflorescence.Height(from soil level to top of inflorescence).—Approximately 52.0 cm to 57.0 cm.Width(measured from leaf tips).—About 31.0 cm to 33.0 cm.Vigor.—Strong.Leaves:Mature leaves.—Quantity per plant: 8 to 10 leaves are produced before flowering. Length (fully expanded): 18.0 cm to 20.0 cm. Width: 8.5 cm to 9.5 cm. Position of the broadest part of the leaf: Toward the tip. Shape: Obovate. Base shape: Moderately elongated. Apex: Acute asymmetric. Leaf blade angle with the petiole (measured from the horizontal position): Between 30 degrees and 45 degrees. Leaf margin: Entire. Color: Upper surface: Green (RHS 146A) with a reddish-brown margin (RHS 200B) toward the tip. Lower surface: Green (RHS 146B) with a purple margin (RHS N77A) toward the tip. Texture (both upper and lower surfaces): Smooth. Thickness: 2.0 mm to 3.0 mm. Variegation: Absent. Venation: Pattern: Parallel. Color of the midvein: Upper surface: Green (RHS 147A). Lower surface: Purple (RHS N77A).Peduncle:Quantity per plant.—2.Number of flowers per peduncle.—10 to 13.Length.—52.0 cm to 57.0 cm.Diameter.—5.0 mm to 6.0 mm.Strength.—Strong.Aspect.—Upright to slightly pendent.Texture.—Smooth.Color.—Mix of brown (RHS 200A) and green (RHS 194A).Internode length.—3.0 cm to 3.5 cm.Inflorescence description:Appearance.—Upright to slightly pendent, panicle inflorescence with bilaterally symmetrical flowers that open in succession beginning with the lowermost flower.Number of inflorescences.—2.Inflorescence size.—Height (from base to tip): 200.0 mm to 240.0 mm.Flowering time.—First flowers can be expected 10 to 11 months after planting in a 12-cm pot.Flower.—Height: 75.0 mm to 80.0 mm. Diameter: 85.0 mm to 90.0 mm. Depth of lip: 23.0 mm to 25.0 mm.Flower shape.—Flat.Flower longevity.—On the plant: 9 to 11 weeks.Fragrance.—Absent.Flower bud.—Average size: Large. Length: 24.0 mm to 26.0 mm. Width: 23.0 mm to 25.0 mm. Shape: Egg shaped. Color: Touch of yellow-green (RHS 145C) at the base; purplish-red (RHS N77B) with a touch of dark purplish-red (RHS N79C) toward the tip.Petals.—Arrangement: Open/free. Shape: Moderately compressed. Apex: Emarginated asymmetric. Margin: Entire. Length (from base to tip): 41.0 mm to 43.0 mm. Width: 54.0 mm to 56.0 mm. Position of the broadest part of the petal: Toward the base. Color (when fully opened): Upper surface: Basic color: Reddish-purple (RHS N78A). Over color: Small, light purple edge (RHS 76A); very small number of very light purple dots (RHS 76B). Lower surface: Basic color: Purplish-pink (RHS N78C). Over color: Reddish-purple (RHS N78B). Number of spots, dots, and stripes on the petals (upper surface): Medium very small dots. Color of spots, dots, and stripes on the petals (upper surface): RHS 76B. Density of netting of the petals (upper surface): None. Color of the netting (upper surface): Not applicable.Dorsal sepal.—Shape: Elliptic. Apex: Emarginated symmetric. Margin: Entire. Length (from base to tip): 41.0 mm to 43.0 mm. Width: 31.0 mm to 34.0 mm. Position of the broadest part of the dorsal sepals: At the middle. Color (when fully opened): Upper surface: Basic color: Reddish-purple (RHS N78A). Over color: Very small white edge (RHS NN155C) and very small number of very light purple dots (RHS 76B). Lower surface: Basic color: Purplish-pink (RHS N78C). Over color: Very light purple dots (RHS 76C). Number of spots, dots, and stripes on the dorsal sepals (upper surface): Many to very many dots scattered all over sepals. Color of spots, dots, and stripes on the dorsal sepals (upper surface): RHS 76B. Density of netting of the dorsal sepals (upper surface): None. Color of the netting (upper surface): None.Lateral sepals.—Shape: Ovate. Apex: Obtuse asymmetric. Margin: Entire. Length (from base to tip): 40.0 mm to 42.0 mm. Width: 27.0 mm to 29.0 mm. Position of the broadest part of the lateral sepals: Toward the base. Color (when fully opened): Upper surface: Basic color: Reddish-purple (RHS N78A). Over color: Light yellow-green (RHS 145C) and dotted (RHS 59A) at the base; very light purple dots (RHS 76B) scattered all over sepals. Lower surface: Basic color: Reddish-purple (RHS N78B). Over color: Light yellow-green (RHS 145D) at the base; reddish-purple midvein (RHS N78A). Number of spots, dots, and stripes on the lateral sepals (upper surface): Medium number of small dots at the base and many very small dots scattered all over sepals. Color of spots, dots, and stripes on the lateral sepals (upper surface): RHS 59A at the base and RHS 76B all over the sepals. Density of netting of the lateral sepals (upper surface): None. Color of the netting (upper surface): Not applicable.Labellum(lip).—Whiskers: Present. Length of whiskers: 18.0 mm to. 20.0 mm. Color of whiskers: Reddish-purple (RHS N78A); red margin (RHS 59A) on one side; very light purple tips (RHS 76C). Pubescence on the lip: Absent.Lateral lobe.—Shape: Type V (as described in the International Union for the Protection of New Varieties of Plants (UPOV) Test Guidelines forPhalaenopsis); spatulate. Margin: Moderately undulated. Length: 20.0 mm to 22.0 mm. Width: 14.0 mm to 16.0 mm. Color: Upper surface: Pinkish-white (RHS N155B) at the base and on one side; red stripes (RHS 183B) at the base; red (RHS 187C) on one side; reddish-purple (a color from RHS N78A to RHS N78B) toward the tip. Lower surface: White (RHS 155C) at the base; red (RHS 187C) on one side; purplish-pink (RHS N78C) toward the tip. Number of spots and stripes on the lateral lobe: Few stripes. Color of spots and stripes on the lateral lobe: RHS 183B. Density of netting of the lateral lobe: None. Color of the netting: None.Apical lobe.—Shape: Triangular. Margin: Entire. Length: 19.0 mm to 21.0 mm. Width: 21.0 mm to 23.0 mm. Color: Upper surface: Light greenish-yellow (RHS 5C); red (RHS 185B) at the base and toward wings; reddish-purple (RHS N78A) shaded at the middle and toward whiskers RHS 59B. Lower surface: Red margin (RHS 185A); reddish-purple (RHS N78B) toward whiskers. Number of spots and stripes on the apical lobe: None. Color of spots and stripes on the apical lobe: None. Density of netting of the apical lobe: None. Color of the netting: None. Bump and ridge: Absent.Callus.—Average size: Medium. Height: 6.0 mm to 7.0 mm. Length: 6.0 mm to 7.0 mm. Width: 5.0 mm to 6.0 mm. Color: Light greenish-yellow (RHS 5C) at the base; white (RHS 155C) on sides; purplish-red flecks (RHS 59B).Reproductive organs:Column.—Length: 8.0 mm to 9.0 mm. Diameter: 5.0 mm to 6.0 mm. Color: Purplish-pink (RHS N78C) with reddish-purple stripe (RHS N78B) from base toward the tip.Pollinia.—Quantity: 2. Diameter: 1.0 mm to 1.2 mm. Color: Orange-yellow (RHS 23A).Ovary.—Length: 10.0 mm to 12.0 mm. Diameter: 2.4 mm to 2.7 mm.Pedicel.—Length: 37.0 mm to 39.0 mm. Diameter: 2.8 mm to 3.1 mm. Color: Touch of dark brown (RHS N200A) and purplish-red (RHS N77B) at the base; light yellow-green (RHS 195C) with a touch of light reddish-purple (RHS N78D) toward the flower. Texture: Smooth.Disease, pest, and stress resistance: No specific resistance or susceptibility observed to pathogens and pests common toPhalaenopsisto date.Fruit and seeds: Fruit and seed development has not been observed on plants of the newPhalaenopsisto date. COMPARISON WITH PARENTAL LINES AND MOST SIMILAR VARIETIES ‘PHA407209’ differs from the female parent plant ‘00001-4992’ (unpatented) in that ‘PHA407209’ has free arrangement of petals, medium-length whiskers, and semi-erect leaf attitude, whereas ‘00001-4992’ has touching arrangement of petals, short whiskers, and erect to semi-erect leaf attitude. ‘PHA407209’ differs from the male parent plant ‘12-050832-0002’ (unpatented) in that ‘PHA407209’ has semi-erect leaf attitude, strong symmetry of apexes, and emarginated dorsal sepals, whereas ‘12-050832-0002’ has horizontal to semi-drooping leaf attitude, moderate symmetry of apexes, and obtuse dorsal sepals. ‘PHA407209’ is most similar to the commercialPhalaenopsisplants named ‘PHA329719’ (U.S. Plant Pat. No. 34,550) and ‘PHA393573’ (U.S. Plant Pat. No. 34,519). ‘PHA407209’ differs from the commercial variety ‘PHA329719’ in that ‘PHA407209’ has strongly asymmetric leaf apexes, medium whiskers, and no stripes on petals, whereas ‘PHA329719’ has symmetric or slightly asymmetric leaf apexes, short to medium whiskers, and few stripes on petals. ‘PHA407209’ differs from the commercial variety ‘PHA393573’ in that ‘PHA407209’ has triangular apical lobes, semi-erect leaf attitude, and purplish-pink columns, whereas ‘PHA393573’ has trullate apical lobes, horizontal to semi-drooping leaf attitude, and reddish-purple columns. | 10,651 |
PP35574 | DESCRIPTION OF THE NEW VARIETY The following is a detailed botanical description of theLavandulacultivar named ‘LAVP1385’. Data was collected in Santa Barbara, Calif. from two-year-old plants grown out of doors in 3.7 gallon containers. Color determinations are made in accordance with The 2007 Royal Horticultural Society Colour Chart of London, England, except where general color terms of ordinary dictionary significance are used. The growing requirements are similar to the species.Classification:Botanical classification.—Lavandula pedunculata‘LAVP1385’.Family.—Lamiaceae.Genus.—Lavandula.Species.—pedunculata.Variety denomination.—‘LAVP1385’.Common name.—Lavender.Plant:Habit.—Dense.Dimensions after one year's growth.—30 cm in height and width.Dimensions at maturity.—60 cm in height and width.Life cycle.—Perennial.Use.—Ornamental flowering plant for containers or in the landscape.Vigor.—Moderate.Hardiness.—USDA Zone 8.Propagation.—Semi-ripe stem cuttings.Root system.—Fibrous.Cultural requirements.—Full sun, adequate but not excess water, and well-draining soil or growing medium.Time to produce a rooted cutting.—4-6 weeks.Time to produce a10cm container plant in bloom.—20 weeks.Seasonal interest.—Flower spikes in spring and summer.Parentage.—Lavandula pedunculata‘LAVP1385’ is a selection that resulted from controlled open pollination of the following parents: Female parent plant:Lavandula pedunculata‘Senros’ (unpatented). Male parent plant: Unknown selections ofLavandula pedunculata.Disease susceptibility.—May be affected by fungal diseasesBotrytis cinereaandAnthracnose.Pest susceptibility.—May be affected by whitefly (Aleyrodidae) and mites (Tetranychidae).Stems, branches:Number.—3-5 initial stems arising from first stop or pinch and then approximately 20-25 lateral branches. All branches and stems bear terminal inflorescences.Branching habit.—Erect, less than 30 degrees away from the vertical.Stem length(to uppermost node).—18 cm to 22 cm.Stem width.—3 mm.Lateral branch length.—5 cm to 7 cm.Lateral branch width.—2 mm.Stem surface(older growth).—Lignified, stiff, rough, glabrous.Stem surface(new growth and new lateral branch stems).—Soft, wiry, tomentose.Stem color.—174B (older growth), 138D (new growth and new lateral stems).Internode length.—8 mm to 12 mm.Foliage:Leaf arrangement.—Opposite.Leaf division.—Simple.Leaf shape.—Narrow lanceolate.Leaf margin.—Entire.Leaf apex.—Acute.Leaf base.—Attenuate.Leaf attachment.—Sessile.Leaf color(adaxial surface).—138A.Leaf color(abaxial surface).—138B.Leaf surface(adaxial surfaces).—Flattened, faintly tomentose.Leaf surface(abaxial surface).—Sulcate, veins raised, glabrous.Venation.—Pinnate. Only the mid-vein visible on adaxial surface, all veins visible and raised on abaxial surface.Vein color.—138A (adaxial surface), 138D (abaxial surface).Leaf length.—25 mm to 28 mm.Leaf width.—3.5 mm at widest.Leaf fragrance.—Characteristic resinous lavender scent.Inflorescence:Description.—Upright cylindrical spike consisting of tubular flowers arranged in eight vertical columns. Each flower is subtended by a basal flower bract and bears 4-6 showy terminal bracts borne at the spike apex.Fragrance.—Characteristic resinous lavender scent.Blooming period.—April through August.Inflorescence type.—Spike.Spike length.—45 mm.Spike diameter.—14 mm-16 mm.Spike shape.—Cylindrical.Spike quantity.—Approximately 300 including buds showing first color.Peduncle length.—38 mm to 50 mm.Peduncle width.—2 mm.Peduncle shape.—Quadrangular, rounded edges.Peduncle color.—138C.Peduncle surface.—Tomentose.Tomenta color.—NN155D.Bud(immature spike)dimensions.—12 mm-15 mm in length, 7 mm-8 mm in diameter.Bud shape.—Ovoid.Bud color.—138A with longitudinal parallel veins color 138C.Bud surface.—Tomentose, color NN155D.Bud apex.—Acute.Flowers:Description.—Tubular shape consisting of corolla tube (five fused petals) and five free rotate petal lobes.Quantity.—Approximately 70-75 flowers per individual spike.Shape.—Salverform.Corolla tube dimensions.—5 mm in length, 2.5 mm in diameter.Petal lobe shape, dimensions.—Obovate, 2.5 mm in length, 2 mm in width.Petals.—Five in number, fused except free terminal petal lobes.Petal dimensions.—0.75 mm in length, 1.25 mm in width.Petal color(both surfaces).—Ranges between 64B and 72A with darker margins N78A.Petal surface(both surfaces).—Glabrous.Petal apex(of lobes).—Rounded.Petal base.—Truncate.Petal lobe margin.—Entire.Calyx shape.—Narrow funnel shaped.Calyx dimensions.—3 mm in length, 2 mm diameter.Sepals.—5 in number, fused towards base.Sepal dimensions.—3 mm in length, 1.5 mm in width.Sepal color.—177B.Sepal apex.—Acute.Sepal base.—Truncate.Sepal surface(both).—Faintly tomentose.Basal floral bracts:Basal bract shape.—Deltoid.Quantity.—Approximately 70-75 per spike.Basal bract dimensions.—6 mm in height (base to apex), 7 mm in width.Basal bract color.—137D with longitudinal parallel veins, color N79C.Basal bract apex.—Acute.Basal bract base.—Truncate.Basal bract surfaces(both surfaces).—Lanate.Basal bract margin.—Entire.Terminal bracts:Terminal bracts.—Range of 4 to 6 arising from each spike apex.Terminal bract form, shape.—Petaloid or strap-like.Terminal bract surfaces(abaxial and adaxial).—Tomentose.Color of hairs.—155B, down color 155B.Terminal bract shape.—Oblong-obovate.Terminal bract margin.—Combination of sinuous and entire.Terminal bract length.—Range of 1.50 cm. to 2.75 cm.Terminal bract width.—Range of 0.50 cm. to 1 cm.Terminal bract apex.—Rounded.Terminal bract base.—Rounded.Terminal bract color(adaxial and abaxial surfaces).—70A or 72A or 72B.Vein pattern.—Reticulate.Vein color.—N77D.Reproductive organs:Stamens.—Four in number, fine hair-like.Filament length.—1.5 mm-2.0 mm.Filament color.—N78A.Anthers.—Tiny, ellipsoid, less than 0.5 mm in length.Anther color.—155D.Pollen.—None found when plant in full flower.Pistil.—One.Style dimensions.—3 mm in length, less than 0.5 mm in diameter.Stigma shape and dimensions.—Capitate, less than 0.5 mm in diameter.Stigma color.—N78A.Ovary.—Not present.Seed.—None found. COMPARISON WITH PARENTS In comparison with the female parent,Lavandula‘Senros’ and with all of the potential male parents, ‘LAVP1385’ exhibits darker flower colors, shorter sterile bracts and shorter peduncles. COMPARISON WITH CLOSEST KNOWN VARIETIES The varieties ofLavandulawhich the inventor considers most closely to resemble ‘LAVP1385’ areLavandula‘Boysenberry Ruffles’ (U.S. Plant Pat. No. 18,256) andLavandula‘Madrid Pink Improved’ (U.S. Plant Pat. No. 14,205). In comparison with ‘Boysenberry Ruffles’, ‘LAVP1385’ exhibits darker colored flowers which are produced earlier in the season. In comparison with ‘Madrid Pink Improved’, ‘LAVP1385’ exhibits darker sterile bracts which are also shorter. In addition, ‘LAVP1385’ exhibits a more upright growth habit. | 6,839 |
PP35575 | DETAILED BOTANICAL DESCRIPTION The following is a detailed description of a 16-month-old plant of ‘VLR13003’ as grown outdoors in 2-gallon containers in Park Hill, OK. The phenotype of the new cultivar may vary with variations in environmental, climatic, and cultural conditions, as it has not been tested under all possible environmental conditions. The color determination is in accordance with The 2015 Colour Chart of The Royal Horticultural Society, London, England, except where general color terms of ordinary dictionary significance are used.General description:Blooming period.—Continuous bloom from May to September in Ontario, Canada.Plant type.—Herbaceous perennial.Plant habit.—Upright, bushy.Height and spread.—An average of 49 cm in height and 50 cm in spread as a 16-month-old plant and 1 m in height and spread in the landscape.Cold hardiness.—At least to U.S.D.A. Zone 4 (canes will die back at −35° C., but will re-grow in spring).Diseases and pests.—Good resistant to black spot disease (caused byDiplocarpon rosae), no resistance or susceptibility to pests has been observed.Root description.—Fibrous, 165B in color.Root development.—An average of 2 to 3 weeks for root initiation with a young rooted plant produced in 8 weeks from a rooted cutting.Propagation—Stem cuttings.Growth rate.—Moderate.Stem description:Stem shape.—Rounded.Stem color.—Young; 144A, mature; NN137A, old wood and bark; N200A and N200B.Stem surface.—Young and mature; smooth, matte, covered with thorns, old wood and bark; rugose, matte.Thorns.—Sparsely covered with thorns mainly at internodes, sharp pointed, very strong, whorled, an average of 5 per 1 cm, 145C, flushed with 182A, 5 mm in length, at widest point at the base 1 mm in diameter, surface is dull and glabrous.Stem strength.—Strong.Stem size.—Main stems; 23 cm in length, 1 cm in diameter, lateral stems 31 cm in length, 3 mm in diameter.Branching.—Freely branching, held in a moderately upright to slightly outward angles, 13 main stems, 6 lateral stems per main stem.Internode length.—Up to 5 cm.Foliage description:Leaves.—Pinnate division, alternate arrangement, held in a bowed and outward and downward angle, overall whole leaf shape; ovate, an average of 7.5 cm in length and 6.5 cm in width.Leaflets.—5 per leaf, terminal leaflet; 4 cm in length, 2.5 cm in width, lateral leaflets; average of 2.5 cm in length and 1.5 cm in width, all leaflets; ovate in shape, cuneate base, acute apex, serrate margins, upper surface is smooth, velvety, semi glossy and glabrous, lower surface is rugose and matte, pinnate venation pattern, color: young upper surface; 146A, flushed with 183A, heavily flushed with 183A at the margins, veins are inconspicuous and match surface color, young lower surface; 182A to 182B, veins match surface color, main vein center to base 144B, mature upper surface; NN137A, veins are inconspicuous and match surface color, mature lower surface; 194A, veins are inconspicuous and match surface color.Rachis.—Both surfaces; flattened in shape, concave towards the center to base, up to 1 cm in length, 1 mm in diameter, color; 144B and 145A, young flushed with 183A, surface is glabrous and slightly glossy.Stipules.—Adnate on either side of the petiole, linear in shape, apex is linear and curvy, 1.3 cm in length, 2 mm in width, both surfaces are slightly glossy, glabrous, margins are serrate and densely covered with minute pubescent hairs, 0.2 mm in length, matching surface colors, color; both surfaces 144B, flushed with 180A, especially margins.Petioles.—(Terminal and lateral) both surfaces; flattened in shape, concave towards the center to base, up to 1 cm in length, 1 mm in diameter, color; 144B and 145A, young flushed with 183A, surface is glabrous and slightly glossy.Petiolule.—Both surfaces; Flattened in shape, up to 1.5 mm in length, 0.5 mm in diameter, color; 144B and 145A, young flushed with 183A, surface is glabrous and slightly glossy.Inflorescence description:Inflorescence type.—Raceme of single flowers on stem terminus.Inflorescence shape.—Ovate.Inflorescence size.—Average of 15 cm in height and diameter.Flower number.—An average of 5 open flowers per receme, average of 32 buds and flowers per plant.Flower fragrance.—Moderate, very pleasant.Flower longevity.—Raceme lasts about 20 days, individual flowers 4 to 5 days.Flower type.—Semi-double to double, rotate.Flower size.—Up to 9 cm in diameter and 4 mm in depth.Flower aspect.—Upright.Peduncles.—Round in shape, strong, up to 5 cm in length, 2 mm in diameter, color; 143B, surface is glabrous, smooth and slightly glossy.Flower buds.—Ovate in shape, up to 3 cm in length, 1 cm in diameter, glabrous surface, color; before burst 144A, flushed with 184A at the top, after burst 144A, flushed with 184A on the sepals, petal portion visible 46A.Sepals.—5, rotate in arrangement, lanceolate in shape, acuminate to acute apex, truncate base, serrate margins, two of the sepals are longer; 4 cm in length and 1 cm in width, three of the sepals are smaller 2.2 cm in length, 5 mm in width, upper surface; two larger sepals; N148A, flushed with 184A, glabrous, matte, three smaller sepals; 143A in color, sheen and densely covered with matted, woolly hairs, NN155D in color, lower surface; two larger sepals; 144A, flushed with 184A, glabrous, matte, three smaller sepals; 144A in color, matte, densely covered with soft, fuzzy, hairs on the margins, slightly translucent and sheen, 0.4 mm in length, NN155D in color.Petals.—10 to 20, persistent, rotate in arrangement, broadly ovate in shape, up to 3 cm in length, 2.7 cm in width, obtuse to rounded apex, entire to slightly undulate margins, cuneate to cordate base, both surfaces are velvety, glabrous and matte, color: upper and lower surface when opening; N45A, upper surface when fully open; 45A, flushed in the center with N57A, base NN155D and 5A, fading to 45B, top N45A, base 9A, lower surface when fully open; 58A to 58B, spot at very base occasionally 9A, fading to 45B, top N45A, base 9A.Bracts.—Simple, attached to base of the long sepals, linear in shape, up to 1 cm in length, 2 mm in width, acute apex, serrate margins, base is cuneate, both surfaces matte, glabrous, color; upper and lower surface 138A, margins flushed with 178A, veins match surface color.Receptacle.—Round, 7 mm in length and diameter, glossy surface, color; 147A.Reproductive organs:Gynoecium.—Pistil; 1, syncarpous, average of 30 styles with stigmas, stigma is club-shaped, 0.5 mm in diameter, 162C in color, style; up to 5 mm in length, color; top to lower section 44C, base 160C, glabrous and slightly translucent, ovary; oval, 2 mm in length, 1 mm in width, 155B in color, sheen, very densely covered with long thin woolly hairs, up to 1.5 mm in length, 155A in color.Androecium.—An average of 80 stamens, filaments; up to 9 mm in length, 7A in color, anthers; kidney shaped, curved, basifixed, an average of 1 mm in length and 0.6 mm in width, 175A in color, pollen; moderate in quantity and 17A in color.Fruit and seed.—None observed to date. | 7,049 |
PP35576 | DETAILED BOTANICAL DESCRIPTION The following detailed description sets forth distinctive characteristics of ‘FL12-236’. The data that define these characteristics were collected from asexual reproductions carried out in Florida. The plant history was taken on a plot of plants growing in an experimental trial near Waldo, Florida (W2A Block). The plant was 9 years of age when the data was collected. Certain characteristics may vary with plant age. ‘FL12-236’ has not been observed under all possible environmental conditions, and the measurements given may vary when grown in different environments. Color descriptions are based on The Royal Horticultural Society (R.H.S.) Colour Chart by The Royal Horticultural Society, London, Fifth Edition, 2007. If any R.H.S. color designations below differ from the accompanying photographs, the R.H.S. color designations are accurate.Classification:Family.—Ericaceae.Botanical.—Vaccinium corymbosum.Common name.—Southern Highbush Blueberry.Cultivar name.—‘FL12-236’.Plant:Plant vigor.—High.Growth habit.—Semi-upright.Plant height.—1.35 m on average for 9-year-old plant.Plant spread.—1.41 m on average for 9-year-old plant.Flower bud density(number)along flowering twigs in January.—High.Twigginess.—Low to Medium.Tendency toward evergreenness.—It has not been tested for evergreen.Productivity.—In northeast Florida, ‘FL12-236’ produces 3-4 kg per season from mature plants 3 years old or older when hand harvested.Chilling requirement.—When under chilling 150-200 hours below 7° C.Cold hardiness.—‘FL12-236’ has been grown in temperate climates with extremely cold winter temperatures. Plants have survived winter freezes of −7° C. with minimal damage.Ease of propagation.—‘FL12-236’ has only been propagated from softwood stem cuttings, where the rooting percentage is greater than 85% and comparable to other varieties.Trunk and branches:Suckering tendency.—Low.Surface texture(of strong,12-month-old shoots).—Moderately Smooth with small micro-size bumps along the shoot.Surface texture(of3-year-old and older wood).—Moderately rough texture with peeling bark along the wood.Color of new twigs observed in the field.—Fan 3 Yellow-green group 144 strong yellow-green C.Color of3-year-old, rough-textured canes.—Fan 4 Brown Group N200 Light gray D with Fan 3 Yellow Green Group 144 strong yellow-green D on area exposed by the peeling bark.Internode length(strong, upright shoots measured in June).—Mean of 14.54 mm.Leaves:Leaf arrangement.—Alternate, Fibonacci Spiral.Length(including petiole, from tip of petiole to end of blade).—Mean of 5.24 cm.Width(at widest point).—Mean of 2.69 cm.Petiole length.—Mean of 3.30 mm.Petiole diameter.—Mean of 1.59 mm.Leaf shape.—Elliptic slightly falcate towards the leaf apex with the leaf apex having a small point.Leaf base shape.—Obovate tapering from center to leaf base.Leaf venation pattern.—Reticulate.Margin.—Entire.Color.—Upper surface: Fan 3 green group 137 moderate olive green A. Lower surface: Fan 3 green group 138 moderate yellow green B. Leaf Vein Color: Fan 3 yellow-green group 151 strong Greenish Yellow A. Leaf petiole color: Fan 3 yellow green group 151 strong greenish yellow A with highlights on upper side and back of Fan 2 Red Purple Group 61 Deep Purplish Red A.Pubescence.—Upper surface of leaves: Absent. Lower surface of leaves: Absent. Margins: Absent.Timing of vegetative bud burst(early, medium, late).—Medium.Relative time of leafing versus flowering.—When not treated with hydrogen cyanamide in mid-winter, leafing occurs after flowering.Flowers:Arrangement.—Flowers are arranged in tight clusters of flowers spiraling along branches without leaves.Fragrance.—Very slight floral fragrance.Shape.—Urceolate, more round with slight oval, moderate radiations.Flowering period.—Mean date of 70% anthesis at Windsor, Florida, is week 8 of the year.Cluster.—Tight cluster.Number of flowers per cluster.—Mean of 7.12.Pedicel.—Length at time of anthesis: Mean of 5.14 mm. Color at time of anthesis: Fan 3 yellow-green group N144 strong-yellow green D with hints of Fan 2 red-purple group 67 strong purplish red A on sun-exposed side.Peduncle.—Length at time of anthesis: Variable, mean of 8.62 mm. Color at time of anthesis: Fan 3 yellow-green group N144 strong yellow-green D with hints of Fan 2 red purple group 67 strong Purplish red A on the sun exposed side.Calyx.—Surface texture: Very Smooth with slight wax. Diameter: Mean of 4.67 mm. Color (outer surface, visible at the time of anthesis without removing the corolla tube): Fan 3 Yellow-green group 144 Strong Yellow green A with Fan 3 yellow-green group 144 Strong Yellow Green C on tips of calyx lobes.Corolla.—Diameter: mean of 5.53 mm. Length (from pedicel attachment point to corolla tip excluding the pedicel): Mean of 11.47 mm. Aperture diameter: Mean of 3.13 mm. Texture: Smooth with slight radiations. Color: Fan 4 white group 155 Pale Yellow Green A. Anthocyanin coloration in tube: Slight Presence on corolla base.Reproductive organs:Style.—Length (top of ovary to stigma tip): Mean of 9.84 mm. Color: Fan 3 yellow-green group 145 Light Yellow green C.Location of tip of stigma relative to lip of the corolla.—Stigma tip is approximately even to 86 mm below the corolla lip.Anthers.—Color: Fan 4 greyed-orange group 167 moderate orange B. Pollen: High. Pollen germination: Typically, greater 90%. Color: Fan 4 white group 155 Pale Yellow Green A. Filament length: 3.93 mm. Filament width: 1.06 mm.Self-fruitfulness.—Low to medium. Planting in the field configurations that promote cross-fertilization with other southern highbush varieties is recommended for all southern highbush blueberry plants grown in Florida.Fruit:Mean date of50%harvest in Waldo, Florida.—Week 15-16 of the year.Diameter of calyx aperture on mature berry.—Mean of 4.96 mm.Size and shape of calyx lobes on mature berry.—Very small, very erect to incurving at the tip of the lobe, with a moderate shallow calyx basin.Pedicel length on ripe berry.—Mean of 6.14 mm.Detachment force for ripe berries(easy, medium, hard).—Easy.Fruit cluster density(sparse, medium, dense).—Medium.Number of berries per cluster.—Mean of 4.Fruiting type.—On current season's shoots.Berry:Cluster(tight, medium, loose).—Medium.Weight(on well-pruned plants).—Mean of 2.52 g per berry.Weight of25berries.—63.11 g.Height.—Mean of 13.85 mm.Width.—Mean of 15.65 mm.Shape.—Round & slight oblate.Surface color of mature berries ripe on the plant.—Fan 1 Green Yellow Group 1 Pale Greenish Yellow D with blush accents ranging from Fan4 Greyed-Purple group 185 Moderate Red B to Moderate Purplish Red C to Deep Pink D.Intensity of fruit bloom.—High.Surface color of ripe berry after polishing.—Fan 3 Yellow-Green Group 150 Brilliant Yellow Green C with Blush accent color ranging from Fan 2 Red-Purple Group 61 Deep-Purplish Red A to Vivid Purplish Red C.Immature berry color, with bloom.—Fan 3 Yellow green Group 145 Light yellow green C.Immature berry color, without bloom.—Fan 3 Yellow Green Group 144 Light Yellow Green D.Flesh color.—Fan 4 white group NN155 Bluish White A with hints of Fan 3 Yellow-Green Group 150 Brilliant Yellow Green C.Surface wax.—Medium High with moderate persistence.Pedicel scar.—Very Small scar and dry. Average 1.04 mm.Firmness.—Very firm. Mean 297.15 g/mm.Flavor.—When Yellow with pink Blush: Pleasant balance of sweet and tanginess. When Color of fruit is predominantly pink the sweetness is increased with hints of a tangy peach flavor.Intensity of fruit sweetness.—High.Texture.—Very Good texture (firm, non-mealy flesh) crispy. High juiciness.Fruit storage quality.—Fruit is unusually firm and can be stored without shriveling, mold or loss of firmness for 3-4 weeks at 4° C.Seeds:Color of dried seeds.—Fan 4 Greyed Orange group N167 Brownish Orange A.Weight of25well-developed dried seeds.—Mean of 17 mg.Length of well-developed dried seeds.—Mean of 2.22 mm.Width of well-developed dried seeds.—Mean of 1.26 mm.Use: Produces southern highbush blueberries suitable for hand harvest for the fresh fruit markets.Resistance to diseases, insects, and mites: Has grown vigorously and shows good bush survival in the field, with almost no plants dying soon after planting. Reaction to the various fungal species that cause summer leaf spots (including rust) is lower than those of other southern highbush varieties. Fungicide applications may be needed after harvest to reduce foliar diseases and retain leaves into the fall for maximum flower bud set. Appears to be more tolerant than other southern highbush varieties to spider mites. Susceptibility to typical blueberry insect and mite pathogens such as spotted wing drosophila (Drosophila suzukii), blueberry gall midge (Dasineura oxycoccana), blueberry chilly thrips (Scirtothips dorsalis), blueberry flower thrips (Frankliniellaspp), and blueberry bud mite (Acalitus vaccini) appear like other southern highbush cultivars. | 8,930 |
PP35577 | DETAILED BOTANICAL DESCRIPTION The aforementioned photographs, following observations and measurements describe trees grown during the summer in Randwijk, Gelderland, The Netherlands in an outdoor orchard and under cultural practices typical of commercial Apple tree production. Trees were four years old when the photographs and description were taken. During the production of the trees, day temperatures ranged from 10 C to 24 C and night temperatures ranged from 8 C to 12 C. Measurements and numerical values represent averages for typical trees and tree parts. The actual measurements of any individual tree or tree parts, or any group of trees or tree parts, of the new Apple tree may vary from the stated average. In the following description, color references are made to The Royal Horticultural Society Colour Chart, 2001 Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:Malus domesticaBorkh. ‘Wuranda’.Parentage:Female, or seed, parent.—Proprietary selection ofMalus domesticaBorkh. identified as code number SQ 159, not patented.Male, or pollen, parent.—Malus domesticaBorkh. ‘Honeycrisp’, disclosed in U.S. Plant Pat. No. 7,197.Propagation:Type.—Typically by grafting onto a rootstock.Plant description:Plant and growth habit.—Upright to outwardly spreading plant habit; moderately vigorous to vigorous growth habit and moderate growth rate.Tree height.—About three meters.Tree diameter.—About 1.25 meter to 1.75 meter.Trunk diameter.—About 5 cm to 7 cm.Growth rate.—About 20 cm to 30 cm per year.Lateral branch description.—Length: About 45 cm to 85 cm. Diameter: About 3.5 cm to 6 cm. Internode length: About 5 cm to 12 cm. Strength: Strong, firm. Angle of attachment: About 80 degrees from main trunk axis. Texture: Moderately pubescent, woody and slightly rough. Color: Close to N200A.Leaf description.—Arrangement: Alternate; simple. Length: About 7 cm to 10 cm. Width: About 3 cm to 5 cm. Shape: Ovate to elliptic. Apex: Acute. Base: Blunt, cordate. Margin: Serrate. Texture, upper surface: Smooth, glabrous. Texture, lower surface: Rough, pubescent. Venation pattern: Pinnate. Color: Developing and fully developed leaves, upper surface: Close to 137A; venation, close to 146D. Developing and fully developed leaves, lower surface: Close to 146A; venation, close to 146D. Petioles: Length: About 5 cm to 9 cm. Diameter: About 5 mm. Texture, upper and lower surfaces: Smooth, glabrous. Color, upper and lower surfaces: Close to 146D.Flower description:Flower type and flowering habit.—Single rotate flowers arranged on panicles; freely flowering habit with about six to ten flowers per inflorescence; flowers face mostly outwardly.Fragrance.—Faintly fragrant, pleasant.Natural flowering season.—Continuously flowering in April and May in The Netherlands.Flower longevity.—Flowers last about two weeks on the plant; flowers not persistent.Inflorescence height.—About 3 cm to 5 cm.Inflorescence diameter.—About 3 cm to 5 cm.Flower diameter.—About 3 cm to 4 cm.Flower depth(height).—About 0.5 cm to 1 cm.Flower buds.—Length: About 1.5 cm to 2.5 cm. Diameter: About 1 cm to 2 cm. Shape: Oval to rounded. Texture: Smooth, glabrous. Color: Close to 58B.Petals.—Quantity and arrangement: Typically five in a single whorl; not imbricate. Length: About 1 cm to 1.5 cm. Width: About 0.5 cm to 1 cm. Shape: Obovate to elliptic. Apex: Obtuse. Base: Cordate. Margin: Entire. Texture, upper and lower surfaces: Smooth, glabrous; satiny. Color: When opening, upper surface: Close to 155C slightly flushed with close to 65B. When opening, lower surface: Close to 155C flushed with close to 58C. Fully opened, upper surface: Close to 155C. Fully opened, lower surface: Close to 155C flushed with close to 58C to 58D.Sepals.—Quantity and arrangement: Typically five in a single whorl. Length: About 5 mm to 7 mm. Width: About 3 mm to 5 mm. Shape: Ovate to somewhat deltoid. Apex: Obtuse. Base: Cordate. Margin: Entire. Texture, upper and lower surfaces: Smooth, glabrous. Color, upper and lower surfaces: Close to 148B to 148C; at the base and the apex, tinged with close to 187A.Pedicels.—Length: About 3 cm to 5 cm. Diameter: About 2 mm to 4 mm. Strength: Moderately strong. Aspect: About 60 to 90 degrees from stem. Texture: Smooth, glabrous. Color: Close to 147C with spots, close to 187A.Reproductive organs.—Stamens: Quantity: About 20 per flower. Filament length: About 2 cm. Filament color: Close to 155C. Anther length: About 3 mm to 5 mm. Anther shape: Oblong, bi-lobed. Anther color: Close to 13B. Pollen amount: Scarce. Pollen color: Close to 158A. Pistils: Quantity: About five per flower. Pistil length: About 1.5 cm. Stigma shape: Trumpet-shaped. Stigma color: Close to 154A. Style length: Less than 1 cm. Style color: Close to 150A. Ovary color: Close to 144A.Fruit description:Ripening time.—About 130 to 140 days.Postproduction longevity.—About 150 days in cold storage.Yield.—Higher than average.Use.—Fresh market.Length.—About 5.5 cm to 7 cm.Diameter.—About 7.5 cm to 9 cm.Fruit weight.—Typically individual fruits will weigh between 200 to 250 gr depending on environmental conditions.General shape in profile.—Obloid.Depth of cavity.—Medium, about 1 cm.Width of cavity.—About 3 cm.Fruit stalk length.—Medium to long; about 2.8 cm to 3.2 cm.Fruit stalk diameter.—About 2.5 mm.Fruit stalk color.—Close to 176A.Fruit skin color.—Ground color, close to 1A, overlain with close to between 45D and 46D.Lenticels.—Quantity: Dense; about 200 per fruit. Length: About 1 mm to 2 mm.Flesh texture.—Firm, compact.Flesh color.—Close to 10D.Flavor.—Rich, aromatic.Locules.—Quantity per fruit: Five. Length: About 1 cm to 1.5 cm. Width: About 1.25 cm to 1.5 cm. Shape: Obloid.Seeds.—Quantity per locule: None to about three depending on environmental conditions and pollinators. Length: About 5 mm to 7 mm. Diameter: About 3 mm to 5 mm. Shape: Obloid. Color: Close to 200A.Temperature tolerance: The new Apple tree has been observed to tolerate temperatures ranging from about −20 C to about 35 C.Pathogen & pest resistance: Trees of the new Apple have been observed to be resistant to Apple Scab (Venturia inaequalis). Trees of the new Apple have not been observed to be resistant to pests and other pathogens common to Apple trees. | 6,299 |
PP35578 | DETAILED BOTANICAL DESCRIPTION The following descriptions set forth the distinctive characteristics of ‘DrisRaspTwentyThree’. Unless where otherwise noted, the data that define these characteristics are based on observations taken from ‘DrisRaspTwentyThree’ plants that were two years old, grown in Whatcom County, Washington from 2010 to 2020. These descriptions are in accordance with UPOV terminology. Color designations, color descriptions, and other phenotypical descriptions may deviate from the stated values and descriptions depending upon variation in environmental, seasonal, climatic and cultural conditions. ‘DrisRaspTwentyThree’ has not been observed under all possible environmental conditions. The indicated values represent averages calculated from measurements of several plants. Color references are primarily to The R.H.S. Colour Chart of The Royal Horticultural Society of London (R.H.S.) (2015 edition). Descriptive terminology follows thePlant Identification Terminology, An Illustrated Glossary,2ndedition by James G. Harris and Melinda Woolf Harris, unless where otherwise defined.Classification:Family.—Rosaceae.Botanical.—Rubus idaeusL.Common name.—Raspberry.Variety name.—‘DrisRaspTwentyThree’.Parentage:Female parent.—‘W678.2’ (unpatented).Male parent.—‘Meeker’ (unpatented).Plant:Height.—418.8 cm.Width.—139 cm.Length/width ratio.—˜3.Growth habit.—Semi-upright.Primocane(current year's cane).—Anthocyanin coloration of cane: Absent. Cane bloom: Absent or very weak. Internodal distance at central ⅓ of cane: 4.45 cm.Very young shoot.—Anthocyanin coloration of apex during rapid growth: Absent. Color of young shoot: RHS 139C (Moderate yellow green).Dormant cane.—Length: 304.8 cm. Color: Brownish purple (RHS 187C).Fruiting lateral.—Attitude: Erect. Length: 40 cm.Prickles(spines).—Presence: Absent.Plant main bearing type.—Only on previous year's cane in summer.Leaves:Predominant number of leaflets.—Five.Profile of leaflets in cross section.—Straight.Leaf rugosity.—Weak.Color of upper side.—Light green (RHS 141A).Color of lower side.—RHS 139B (Moderate yellowish green).Shape of leaflet apex.—Cuspidate.Shape of leaflet base.—Cordate.Leaflet margin.—Doubly serrate.Leaflet texture.—Smooth.Venation pattern.—Pinnate.Vein color.—RHS 139D (Moderate yellow green).Terminal leaflet.—Length: 101.9 mm. Width: 75.4 mm. Length/width ratio: 1.4.Lateral leaflets.—Length: 166.8 mm. Width: 55.3 mm. Length/width ratio: 3.0. Relative position of lateral leaflets: Free.Rachis.—Length between terminal leaflet and adjacent lateral leaflets: 26.9 mm. Color: RHS 139D (Moderate yellow green).Petiole.—Length: 57.8 mm. Diameter: 2.72 mm. Color: RHS 145A (Strong yellow green).Flowers:Diameter.—30.23 mm.Petal.—Length: 8.70 mm. Width: 4.07 mm. Length/width ratio: 2.1. Average number of petals per flower: 5. Color of upper surface: RHS NN155B (Yellowish white). Color of lower surface: RHS N155B (Yellowish white). Shape of base: Cuneate. Shape of apex: Cuspidate. Texture of upper surface: Smooth. Texture of lower surface: Smooth. Petal margin: Entire.Pedicel.—Length: 49.20 mm. Diameter: 1.34 mm. Color: RHS 138B (Moderate yellow green). Number of spines: Absent or very few.Peduncle.—Length: 18.97 mm. Diameter: 1.33 mm. Color: RHS 144B (Yellow green). Anthocyanin coloration: Absent.Reproductive organs.—Stigma: Length: 2.8 mm. Width: 3.6 mm. Shape: Oblanceolate. Color: RHS NN155D (White). Anther: Length: 0.62 mm. Width: 0.41 mm. Shape: Oval. Color: RHS 166B (Moderate reddish brown). Pollen: Color: RHS NN155D (White).Fruit:Length.—22.50 mm.Width.—19.33 mm.Weight.—3.35-4 g/fruit.Shape.—Conical.Number of drupelets.—132 per fruit.Color of mature fruit.—RHS 46A (Strong red).Color of mature fruit internal flesh.—RHS 53A (Deep red).Receptacle.—Depth: 12.19 mm. Width: 5.85 mm.Seed.—Length: 2.30 mm. Width: 1.33 mm. Shape: Ovoid. Color: RHS 159C (Pale orange yellow).Production:Floricane(previous year's cane).—Time of vegetative bud burst: March. Time of beginning of flowering: Late April to May. Time of beginning of fruit ripening: June. Length of fruiting period: Mid-June to early August. Yield: 8,000 lbs-16,000 lbs of fruit per acre per season for 26-month-old plants grown in Whatcom County, Washington, U.S.A.Resistance to abiotic stress, pests, and diseases:Heat.—Fruit sunburn has been observed at temperatures exceeding 100° F. during fruit ripening.Cold.—Injury to overwintering primocanes has been observed at temperatures below −6° F.Drought.—Susceptible to prolonged drought.Powdery mildew(podosphaera macularis).—Moderately susceptible.Phytophthora root rot(phytophthora sp.).—Moderately resistant.Cane and fruit botrytis(botrytis cinerea).—Moderately susceptible. COMPARISONS TO PARENTAL AND REFERENCE RASPBERRY VARIETIES ‘DrisRaspTwentyThree’ differs from the proprietary female parent ‘W678.2’ in that fruit of ‘DrisRaspTwentyThree’ are more uniform in color and more red than fruit of ‘W678.2’. Additionally, during machine harvest, fewer unripe green fruit of ‘DrisRaspTwentyThree’ are removed than in ‘W678.2’. ‘DrisRaspTwentyThree’ differs from the male parent and reference variety ‘Meeker’ in that ‘DrisRaspTwentyThree’ has completely thornless canes and medium red fruit color, whereas ‘Meeker’ has thorny canes and dark red fruit color. Additionally, ‘DrisRaspTwentyThree’ has larger fruit than ‘Meeker’, and ‘DrisRaspTwentyThree’ begins bearing ripe fruit three to five days earlier than ‘Meeker’ when grown in Whatcom County, Washington. ‘DrisRaspTwentyThree’ differs from the reference raspberry variety ‘Tulameen’ (unpatented) in that ‘DrisRaspTwentyThree’ has absent or very weak anthocyanin coloration on current season's cane and spineless canes, whereas ‘Tulameen’ has weak anthocyanin coloration on current season's cane and spines present on canes. | 5,816 |
PP35579 | DETAILED BOTANICAL DESCRIPTION The aforementioned photograph and following observations, measurements and values describe plants grown during the summer in 15-cm containers in a polyethylene-covered greenhouse in Sao Paulo, Brazil and under cultural practices typical of commercialMandevillaproduction. During the production of the plants, day temperatures ranged from 20° C. to 35° C. and night temperatures ranged from 10° C. to 20° C. Plants were pinched three times: four weeks, six weeks and eight weeks after planting. Plants were 33 weeks old when the photograph and description were taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, 2015 Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:Mandevilla sanderi‘TVMD640’.Parentage:Female, or seed, parent.—Mandevilla sanderi‘Sunpapri’, disclosed in U.S. Plant Pat. No. 28,277.Male, or pollen, parent.—Proprietary selection ofMandevilla sanderiidentified as code number TVMD321, not patented.Propagation:Type.—By vegetative cuttings.Time to initiate roots, summer.—About three weeks at temperatures about 20° C. to 35° C.Time to initiate roots, winter.—About three weeks at temperatures about 20° C. to 25° C.Time to produce a rooted young plant, summer.—About 20 to 25 days at temperatures about 20° C. to 35° C.Time to produce a rooted young plant, winter.—About 25 to 30 days at temperature about 20° C. to 25° C.Root description.—Thick, fleshy; typically white in color, actual color of the roots is dependent on substrate composition, water quality, fertilizers, substrate temperature and physiological age of roots.Rooting habit.—Low branching; medium density.Plant description:Plant and growth habit.—Upright to broadly spreading plant habit; roughly broadly obovate in overall shape; moderately vigorous growth habit and moderate to rapid growth rate.Plant height, soil level to top of foliar plane.—About 22 cm.Plant height, soil level to top of floral plane.—About 31 cm.Plant diameter(spread).—About 26 cm.Lateral branch description.—Branching habit: Moderate branching habit, typically about two primary lateral branches each with about two secondary lateral branches. Length: About 22 cm. Diameter: About 2.3 mm. Internode length: About 2.4 cm. Aspect: Primary lateral branches, mostly upright; secondary lateral branches, about 25° from primary branch axis. Strength: Moderately strong. Texture and luster: Smooth, glabrous; semi-glossy; becoming woody with development. Color, developing: Close to 144C. Color, developed: Close to 144B; when woody, close to N199C.Leaf description:Arrangement.—Opposite, simple.Length.—About 8 cm.Width.—About 7.2 cm.Shape.—Oblong to ovate.Apex.—Acuminate.Base.—Rounded.Margin.—Entire.Texture and luster, upper surface.—Smooth, glabrous; moderately coriaceous; glossy.Texture and luster, lower surface.—Smooth, glabrous; moderately coriaceous; moderately glossy.Venation pattern.—Pinnate.Color.—Developing leaves, upper surface: Close to 137B. Developing leaves, lower surface: Close to 147B. Fully expanded leaves, upper surface: Close to 137A; venation, close to 146D. Fully expanded leaves, lower surface: Close to 147C; venation, close to 145B.Petioles.—Length: About 6.2 cm. Diameter: About 1.6 mm. Strength: Moderately strong. Texture and luster, upper and lower surfaces: Smooth, glabrous; slightly glossy. Color, upper surface: Close to 144B. Color, lower surface: Close to 144A.Flower description:Flower type and flowering habit.—Single salverform flowers arranged in terminal and axillary cymes; flowers face slightly outwardly to upright; freely flowering habit with about two to three fully open flowers per inflorescence and about 26 flower buds and open flowers develop per plant.Natural flowering season.—Plants flower continuously year-round in Brazil; plants begin flowering about 25 weeks after planting rooted young plants.Flower longevity on the plant.—Individual flowers last about ten days; flowers not persistent.Fragrance.—None detected.Inflorescence height.—About 16.5 cm.Inflorescence diameter.—About 15 cm.Flower buds.—Length: About 5.2 cm. Diameter: About 8.6 mm. Shape: Lanceolate. Texture and luster: Smooth, glabrous; slightly glossy. Color: Distally, close to 13B; mid-section, close to 150B and proximally, close to 144D.Flowers.—Appearance: Flared trumpet, corolla fused and five-parted. Diameter: About 8.7 cm by 8.7 cm. Depth (length): About 3 cm. Throat diameter: About 1 cm. Tube length: About 1.5 cm. Tube diameter: About 2.8 mm.Corolla.—Quantity and arrangement: Five petals arranged in a single whorl; lower 36% portion of the petals are fused into a funnelform tube. Petal length: About 3.5 cm. Petal width: About 2.5 cm. Petal shape and appearance: Roughly unequal and asymmetric; somewhat spatulate; slightly convex. Petal apex: Acute. Petal margin: Entire; slightly undulate. Petal texture and luster, upper and lower surfaces: Smooth, glabrous; slightly glossy. Throat texture: Smooth, glabrous. Tube texture: Smooth, glabrous. Color: Petal, when opening, upper surface: Close to 14D. Petal, when opening, lower surface: Close to 10C. Petal, fully opened, upper surface: Close to 14D; venation, close to 14A; color does not change with subsequent development. Petal, fully opened, lower surface: Close to 9D; venation, close to 9D; color does not change with subsequent development. Throat: Close to 15A; venation, close to 25B. Tube: Close to 145A; venation, close to 145A.Sepals.—Quantity and arrangement: Five sepals arranged in a single whorl. Length: About 1.1 cm. Width: About 3.3 mm. Shape: Lanceolate. Apex: Acuminate. Base: Broadly cuneate and fused. Margin: Entire. Texture and luster, upper surface: Smooth, glabrous; slightly glossy. Texture and luster, lower surface: Smooth, glabrous; matte. Color: When developing, upper and lower surfaces: Close to N144A. Fully developed, upper and lower surfaces: Close to N144A.Peduncles.—Length: About 4.5 cm. Diameter: About 1.6 mm. Strength: Strong. Aspect: About 45° from lateral branch axis. Texture and luster: Smooth, glabrous; moderately glossy. Color: Close to 144A.Pedicels.—Length: About 1.4 cm. Diameter: About 1.7 mm. Strength: Strong. Aspect: About 30° from peduncle axis. Texture and luster: Smooth, glabrous; moderately glossy. Color: Close to 144B.Reproductive organs.—Stamens: Quantity and arrangement: Typically five; basifixed; anthers connivent. Filament length: About 2 mm. Filament color: Close to 145D. Anther shape: Narrowly sagittate. Anther size: About 1.2 mm by 8 mm. Anther color: Close to 162B. Pollen amount: Scarce to moderate. Pollen color: Close to 155B. Pistils: Quantity: Typically one. Pistil length: About 2.3 cm. Style length: About 1.9 cm. Style color: Close to 145D. Stigma diameter: About 3.1 mm. Stigma shape: Club-shaped, pointed. Stigma color: Close to 144D. Ovary color: Close to 145B.Seeds and fruits.—To date, seed and fruit production have not been observed on plants of the newMandevilla.Pathogen & pest resistance: To date, plants of the newMandevillahave not been noted to be resistant to pathogens and pests common toMandevillaplants.Temperature tolerance: Plants of the newMandevillahave been observed to tolerate temperatures ranging from about 5° C. to about 40° C. and to be suitable for USDA Hardiness Zones 9 to 13. | 7,391 |
PP35580 | DETAILED BOTANICAL DESCRIPTION The following detailed description of the ‘IH13022’ cultivar is based on observations of various 2-4-year-old plants, 1stpropagation generation, growing on a hop farm in Oregon's Willamette Valley between 2019 and 2021. The original motherplant has been observed growing in a cultivated area near Corvallis, Oregon. The new cultivar has not been evaluated under all possible environmental conditions but was developed for Oregon's Willamette Valley (USDA hardiness zone 8b near 45 degrees North latitude). Certain characteristics of this cultivar such as growth, color, and cone chemical composition may vary with different grower practices and changing environmental conditions (e.g., light, temperature, moisture, nutrient availability, or other factors). The color descriptions are all based on TheRoyal Horticultural Society(R.H.S.)Colour Chart,6thedition, 2015.Parentage:Female parent.—Humulus lupulus‘Sorachi Ace’.Male parent.—Unknown. Comparison to Other Commercially Available Varieties Tables 1-6 below provide comparisons between various traits of the cultivar ‘IH13022’, its female parent ‘Sorachi Ace’, and the commercially available aroma cultivar ‘OR91331’ (U.S. Plant Pat. No. 31,042). The aroma hop cultivar ‘OR91331’ was bred for the same target environment as ‘IH13022’, and represents a widely grown aroma hop cultivar in the target environment. ‘Sorachi Ace’ was developed in Japan and has very limited acreage and commercial acceptance in the United States. The cultivar ‘OR91331’ is ideal for aromatic, hop-forward beer styles such as an IPA (India Pale Ale). As shown in Table 1, ‘IH13022’ typically yields less than ‘OR91331’, but similar to ‘Sorachi Ace’ when grown in Oregon's Willamette Valley, and the observed yield is acceptable for this region. TABLE 1Per-plant yield for ‘IH13022’ compared to ‘Sorachi Ace’ and‘OR91331’ grown in Oregon's Willamette Valley.CultivarYield (lbs)†Range (lbs)‘OR91331’9.48a6.95-17.30‘IH13022’7.81ab4.08-14.65‘Sorachi Ace’5.18b4.52-6.20†Means followed by the same letter are not statistically significant at P = 0.05. The ‘IH13022’ cultivar has less alpha acids concentration than ‘OR91331’ but is similar to ‘Sorachi Ace’, and contains less beta acids than either control cultivar (Table 2). The bittering acids provide bitterness to beer during the brewing process. The cultivar ‘IH13022’ also contains higher amounts of cohumulone than ‘OR91331’, and higher colupulone than the other two cultivars. Cohumulone is the major component of the alpha acids while colupulone is the major component of the beta acids. Total essential oil content is lower than either ‘Sorachi Ace’ or ‘OR91331’. TABLE 2Bittering acids and total oil content in hops of theindicated cultivars grown in Oregon's Willamette Valley.CultivarRangeAlpha Acids (%)‘OR91331’12.57a11.58-13.52‘IH13022’9.56b8.58-10.47‘Sorachi Ace’8.99b8.42-9.57Beta Acids (%)‘OR91331’5.28a4.75-5.57‘Sorachi Ace’4.41b4.32-4.46‘IH13022’3.60c3.32-3.99Total Oil (ml/100 g)‘OR91331’2.36a1.94-3.00‘Sorachi Ace’2.27a1.30-2.80‘IH13022’1.66b0.83-1.92Hop Storage Index‘IH13022’0.27a0.25-0.28‘Sorachi Ace’0.23b0.21-0.24‘OR91331’0.23b0.19-0.25Cohumulone (%)‘IH13022’0.28a0.26-0.39‘Sorachi Ace’0.27a0.26-0.28‘OR91331’0.22b0.19-0.24Colupulone (%)‘Sorachi Ace’0.55a0.52-0.59‘IH13022’0.48b0.46-0.51‘OR91331’0.43c0.35-0.52†Means within a chemical compound followed by the same letter are not statistically significant at P = 0.05. Table 3 shows the concentrations of 22 essential oil components implicated in beer flavor and aroma of the indicated cultivars when grown in Oregon's Willamette Valley. TABLE 3Essential oil component mean concentrations and ranges (inparentheses) for ‘IH13022’, its female parent ‘SorachiAce’, and ‘IH91331’ when grown in Oregon's WillametteValley. Data are mg/100 g dried tissue.Component†‘IH13022’‘Sorachi Ace’‘OR91331’a-Pinene2.15 a1.20 a2.34 a(0.84-2.64)(0.15-2.51)(1.39-3.19)b- Pinene23.17 a12.60 b29.68 a(12.85-27.60)(1.41-29.27)(18.47-41.42)Myrcene1336.53 a723.52 b1698.97 a(743.04-1673.73)(98.12-1552.22)(1080.16-2380.36)Limonene11.58 a5.69 b14.89 a(6.06-17.13)(0.43-14.47)(9.86-20.00)Cymene7.11 b0.02 c13.09 a(4.74-8.78)(0-0.05)(10.55-15.97)Methyl10.25 b2.72 b30.05 aHeptanoate(7.78-15.28)(0-7.76)(19.37-48.48)Linalool14.17 b5.43 c23.20 a(11.22-17.75)(0.01-12.34)(15.84-31.64)b-211.07 b111.61 c350.37 aCaryophyllene(71.04-274.74)(1.80-218.52)(296.44-446.81)Terpin-4-ol0.59 a0.04 c0.43 b(0.45-0.70)(0-0.09)(0.19-0.77)Farnesene20.53 ab62.32 a0.34 b(0-105.71)(0.20-121.91)(0-0.81)Humulene316.35 b333.72 b730.81 a(163.84-443.73)(34.89-608.25)(617.10-905.64)Citral 10.32 b4.02 a0.79 b(0.16-0.59)(0-11.37(0.33-1.71)Citral 21.00 a2.09 a0.88 a(0.73-1.89)(0.01-5.00)(0.44-1.68)a-Terpineol2.71 a0.09 b1.97 ab(0.25-4.63)(0-0.16)(0.07-3.36)Geranyl8.74 a0.97 a4.28 aAcetate(2.18-23.06)(0-2.47)(3.05-5.55)Nerol2.98 b1.03 c5.89 a(2.03-4.05)(0.04-2.83)(4.80-8.07)Geraniol4.09 b11.78 a4.07 b(2.76-5.55)(1.41-20.08)(1.65-8.28)Caryophyllene1.23 a2.06 a1.88 aOxide(0.26-1.72)(0.29-4.79)(1.67-2.12)Epoxide 23.83 a1.54 a5.05 a(2.38-4.95)(0.51-2.56)(1.36-11.84)3-carene6.33 b0.96 c14.11 a(3.61-9.49)(0-2.31)(10.92-18.21)Methyl5.25 b0.29 b10.55 aGeranate(2.34-6.60)(0-0.58)(0.98-16.52)Geranyl15.70 a1.67 b50.49 aIsobutyrate(6.74-28.24)(0.07-3.27)(1.37-124.43)†Means within a chemical compound followed by the same letter are not statistically significant at P = 0.05. Summary of Morphological Traits Tables 4-7 summarize the principal morphological characteristics of ‘IH13022’ when grown in Oregon's Willamette Valley, as compared to female parent ‘Sorachi Ace’ and the industry-standard aroma hop cultivar ‘OR91331’, which was selected for the same growing region. Lower Canopy Cone Measurements Cones found in the lower canopy of ‘IH13022’ (Table 4): 1. have a greater number of bracts and bracteoles per cone than ‘OR91331’ and ‘Sorachi Ace’2. have wider cone bracts and bracteoles than ‘OR91331’ and ‘Sorachi Ace’3. have longer bracts than ‘IH91331’ and bracteoles that are longer than ‘IH91331’ but shorter than ‘Sorachi Ace’4. are longer and have a longer rachis (central strig) than ‘IH91331’ and ‘Sorachi Ace’ TABLE 4Lower canopy cone measurements for ‘IH13022’, thefemale parent ‘Sorachi Ace’, and ‘OR91331’ whengrown in Oregon's Willamette Valley.CultivarTrait†RangeNumber of Bracts‘IH13022’27.5 a23-32‘Sorachi Ace’23.9 b13-27‘OR91331’23.5 b22-28Number of Bracteoles‘IH13022’56.3 a42-79‘OR91331’38.8 b31-47‘Sorachi Ace’31.8 b16-43Cone Bract Width (cm)‘IH13022’1.3 a0.7-2.2‘Sorachi Ace’1.2 b0.7-2.2‘OR91331’1.1 c0.5-1.8Cone Bract Length (cm)‘IH13022’1.9 a1.1-2.6‘Sorachi Ace’1.9 a1-2.8‘OR91331’1.7 b0.8-2.1Cone Bracteole Width (cm)‘IH13022’0.97 a0.5-1.7‘Sorachi Ace’0.90 b0.6-1.1‘OR91331’0.90 b0.5-1.8Cone Bracteole Length (cm)‘Sorachi Ace’1.7 a1.3-2.5‘IH13022’1.6 b0.8-2.3‘OR91331’1.5 c0.5-1.8Cone Length (cm)‘IH13022’5.1 a4.4-5.9‘Sorachi Ace’4.3 b3.1-5.2‘OR91331’4.0 b3.1-4.5Rachis Length (cm)‘IH13022’4.1 a3.6-4.9‘Sorachi Ace’3.3 b2.3-4.3‘OR91331’3.1 b2.6-4.0†Means within a trait followed by the same letter are not statistically significantat P = 0.05. Middle Canopy Cone Measurements Cones found in the middle canopy of ‘IH13022’ (Table 5):1. have a greater number of bracts and bracteoles per cone than ‘OR91331’ and ‘Sorachi Ace’2. have wider cone bracts and bracteoles than ‘OR91331’ and ‘Sorachi Ace’3. have a longer bract than ‘OR91331’ and longer bracteoles than ‘IH91331’ and ‘Sorachi Ace’4. are longer than ‘OR91331’ and ‘Sorachi Ace’5. have longer cone petioles than ‘OR91331’ TABLE 5Middle canopy cone measurements for ‘IH13022’, itsfemale parent ‘Sorachi Ace’, and ‘OR91331’ whengrown in Oregon's Willamette Valley.CultivarTrait†RangeNumber of Bracts‘IH13022’32.8 a29-42‘OR91331’27.3 b22-34‘Sorachi Ace’21.7 c16-29Number of Bracteoles‘IH13022’58.4 a50-67‘OR91331’47.8 b36-68‘Sorachi Ace’36.2 c22-46Cone Bract Width (cm)‘IH13022’1.4 a0.7-2.1‘Sorachi Ace’1.2 b0.9-1.5‘OR91331’1.0 c0.3-1.7Cone Bract Length (cm)‘IH13022’2.0 a1.2-2.9‘Sorachi Ace’2.0 a1.2-2.4‘OR91331’1.6 b0.8-2.1Cone Bracteole Width (cm)‘Sorachi Ace’1.0 a0.7-1.9‘IH13022’0.9 b0.4-1.7‘OR91331’0.8 c0.5-1.2Cone Bracteole Length (cm)‘Sorachi Ace’1.7 a1.3-2.0‘IH13022’1.6 b0.8-2.3‘OR91331’1.6 b0.7-2.0Cone Length (cm)‘IH13022’5.4 a4.8-5.8‘Sorachi Ace’4.7 b3.7-5.4‘OR91331’4.5 b3.5-5.6Rachis Length (cm)‘IH13022’4.1 a3.1-5.1‘Sorachi Ace’3.7 a2.8-4.7‘OR91331’3.4 a3.0-4.2†Means within a trait followed by the same letter are not statistically significant at P = 0.05. Morphological Characteristics Compared to ‘IH91331’ when grown in Oregon's Willamette Valley, ‘IH13022’ (Table 6):1. has a longer main bine internode length2. has a longer sidearm 1st internode length3. has a wider sidearm 1st internode diameter4. has longer leaves5. has a longer cone petiole TABLE 6Plant morphological measurements for ‘IH13022’and an industry-standard aroma hop cultivar‘OR91331’ when grown in Oregon's Willamette Valley.CultivarTrait (cm)†Range (cm)Main Bine Internode Length‘IH13022’32.4 a26.8-36.7‘OR91331’20.5 b11.4-29.2Main Bine Diameter‘IH13022’0.8 a0.6-1.0‘OR91331’0.7 a0.6-0.8Sidearm Length‘IH13022’91.9 a58.1-130.4‘OR91331’73.5 a45.6-103.5Sidearm 1st Internode Length‘IH13022’26.0 a18.5-32.9‘OR91331’20.0 b13.5-29.9Sidearm 1st Internode Diameter‘IH13022’0.43 a0.4-0.5‘OR91331’0.31 b0.3-0.4Leaf Length‘IH13022’17.9 a10.1-21.4‘OR91331’12.2 b7.9-19.3Leaf Width‘IH13022’20.1 a10.6-28.8‘OR91331’13.9 a7.6-23.8Leaf Petiole Length‘IH13022’11.63 a6.5-16.4‘OR91331’11.13 a4.9-16.6Leaf Petiole Diameter‘IH13022’0.43 a0.2-0.6‘OR91331’0.39 a0.2-0.7Cone Petiole Length‘IH13022’5.7 a2.7-9.3‘OR91331’3.9 b2.5-5.4Cone Petiole Diameter‘IH13022’0.1 a0.1‘OR91331’0.1 a0.1†Means within a trait followed by the same letter are not statistically significant at P = 0.05. Table 7 lists additional plant characteristics for ‘IH 13022’. TABLE 7Qualitative mid-canopy data collected from hopcultivar ‘IH13022’ when grown in Oregon'sWillamette Valley.TraitDescriptionPloidy2X (diploid)PlantVigorous climbing bineShapeColumnarPlant head volumeMediumFoliage densityMediumTarget areaOregon's Willamette Valley (USDA hardinesszone 8b near latitude 45 degree North)BineShapeHexagonalColor144DStriping183BTotal length (ft)21+Leaf PetioleColorNN143A with NN183BShapeFlat upper surface with channelLeafArrangementOppositeShapeImmature = 3-lobed, Mature = mix of 3-to 9-lobedColorUpper = 137A, lower = NN147BVenationprimary order: palmatesecondary order: craspedodromousVein colorNN144BBlisteringAbsentLeaf marginSerratedLigule color144CAdaxial leaf texturepubescentAbaxial leaf texturepubescentConeShapeOvateDegree of openingPetiole end: openRest of cone: closedFlowering dateJuly 16-24Maturity dateSeptember 2-5Cone distributionEvenly distributed throughout plantPetiole color144ABract color149DBracteole color145CRachis color138D Sensory Observations Internal sensory evaluations of hop cones from ‘IH13022’ took place from October 2019 through November 2020. These evaluations include “dry rub” analysis via human sensory for aromatic character, as well as “dry hop” analysis again for human analysis of how the hop character expresses in beer. The “dry rub” involves rubbing the dried hop cones aggressively between a person's hands to rupture the lupulin glands and volatize the oils, at which point experienced personnel evaluate and record the aromatics. “Dry hop” analysis involves adding the dried hop cone material into a neutral base beer and allowing time for the hop oils to transfer into the beer so that hop flavor and aroma can be evaluated in the finished product. The primary sensory observations collected from test brews can be summarized as “bright, fresh peach-lemonade, candied orange peel, mango, boysenberry and guava.” Another unique characteristic of the hop cones from ‘IH13022’ is that they are void of the typical resinous character (aroma/flavor reminiscent of coniferous tree sap/pitch) that normally comes along with such hops of above average intensity. | 11,993 |
PP35581 | BOTANICAL DESCRIPTION OF THE PLANT The following is a detailed botanical description of the newSempervivumvariety named ‘VS2023-01’. Observations, measurements, values and comparisons were collected in Santa Barbara, California in August 2022 from a two-year-old plant which has been grown out of doors in a 2-gallon container. Color determinations are made in accordance with the 2007 edition of The Royal Horticultural Society Colour Chart from London, England, except where general color terms of ordinary dictionary significance are used. The growing requirements of the new variety ‘VS2023-01’ are similar to the species. The observed plant consists of a large central rosette surrounded small offsets attached to the base of the central rosette. The offsets have not been removed. Except where the offsets are described herein, the botanical description is drawn from the central rosette.Botanical classification:Family.—Crassulaceae.Genus and species.—Sempervivum hybrida.Denomination.—‘VS2023-01’.Common names.—Stonecrop, Hens and Chicks, Houseleek.Parentage:Female parent.—Sempervivum‘Leopold’.Male parent.—Unknown.Plant:Habit.—Basal rosette.Use.—Garden and landscape planting, especially in dry conditions, planted containers.Suggested commercial container size.—4-inch container (1-year-old plants), 2-gallon container (2-year-old plants).Propagation method.—Removal and rooting of offsets.Rooting system.—Fine and fibrous.Root color.—NN155C.Vigor.—Fast-growing through spring and early summer.Crop time.—A 4-inch container will be filled out after four (4) months from planting a rooted offset. A two-gallon container will be filled out after two years from planting a rooted offset.Plant dimensions(two-year-old plant,2-gallon container).—11 cm in height and 17 cm in diameter (excluding offsets) and 23 cm in diameter including the offsets.Cultural requirements.—Grown in free-draining soil and water sparingly in morning or evening.Pest and disease resistance.—None known to the inventor.Pest and disease susceptibility.—None known to the inventor.Hardiness.—USDA Zone 4.Stem: Stemless.Foliage:Arrangement.—Leaves arranged in whorls.Whorl quantity.—15 whorls distinguishable, further whorls are developing in the deep center of the plant.Leaf quantity per whorl.—11-15.Leaf attachment.—Sessile.Leaf texture.—Succulent, fleshy.Leaf division.—Simple.Leaf margin.—Finely ciliate, hairs evenly spaced 0.25 mm-0.5 mm apart, length 0.25 mm — 0.5 mm, angled towards base, color NN155D.Leaf surface:(abaxial and adaxial).—Glabrous, semi-glossy.Leaf shape.—Obovate.Leaf length(largest leaves).—50 mm.Leaf width(largest leaves).—22 mm.Leaf thickness(largest leaves).—6 mm towards base, 2.5 mm towards apex.Leaf color.—Oldest leaves(formed in previous season and comprising the lowermost and largest whorls, both surfaces).—59A towards base, 146C in mid-section, ranging between 173C and 170C towards apex.Current year leaves(forming the central and inner whorls, both surfaces).—187A except tips towards apex. Tip color 146D.Young leaves within tight rosette, unexposed to sunlight, both surfaces.—146D.Leaf apex.—Mucronate, spine 2 mm-3 mm in length, soft, spine color 173A except youngest leaves, spine color 146D.Leaf base.—Truncate.Venation.—Absent.Offsets:Offset description.—Offsets emerge in second and subsequent years as whole plant rosettes attached to the base of the primary rosette. Initially, offsets are stemless then developing stems with age. Occasional offsets are borne on stems which originate below the soil surface. Offsets may be removed with stems attached for propagation.Offset quantity.—14 on observed plant.Offset stem dimensions(if not removed).—Up to 10 cm in length, 4 mm in diameter.Offset dimensions.—Ranging between 2 cm and 7 cm in diameter and between 1 cm and 3 cm in height.Offset foliage description.—Whorled, older leaves colored 187A except tips 146D, youngest leaves 146D.Inflorescence: No inflorescences have been observed on the two year old plants.Inflorescence type.—Terminal cyme.Inflorescence dimensions.—6 cm in height, 5 cm in diameter.Blooming season.—Late summer or fall.Inflorescence quantity(if present).—1 or 2.Inflorescence stems(peduncles).—Initially upright, emerging from within the rosette of whorls, not from the base. Stems arch as inflorescence ages and dies.Stem texture.—Fleshy, surface downy.Stem dimensions.—20 cm-30 cm in length, 3 mm-5 mm in diameter.Stem color.—144D-145A.Flower quantity.—Approximately 50 per cyme.Flower shape.—Stellar, radially symmetrical.Flower dimensions.—5 mm in height, 6 mm in diameter.Fragrance.—None observed.Lastingness of individual flower(on the plant).—10-14 days.Persistent or self-cleaning.—Persistent.Bud:Bud shape.—Spherical.Bud dimensions(immediately prior to opening).—3 mm-4 mm in diameter.Bud surface.—Pubescent.Bud apex.—Rounded.Bud color.—26B.Petals:Petal quantity.—16.Petal color(both surfaces).—36D, becoming NN155C when flower is fully expanded.Petal shape.—Lanceolate.Petal apex.—Acute.Petal base.—Truncate.Petal margin.—Smooth, entire.Petal dimensions.—5 mm in length, 1 mm in width.Petal surface texture.—Matte, paper-like.Sepals:Sepal quantity.—16.Sepal shape.—Lanceolate.Sepal color.—Ranges between 34A and 34C except 46A towards apex.Sepal apex.—Acute.Sepal base.—Truncate.Sepal margin.—Smooth, entire.Sepal dimensions.—3 mm-4 mm in length, 1 mm in width.Sepal surface texture.—Matte, abaxial surface pubescent.Pedicel:Pedicel shape.—Cylindrical.Pedicel color.—34C.Pedicel surface texture.—Glabrous.Pedicel dimensions.—8 mm in length and 2 mm in width.Reproductive organs:Stamens.—24-32 in number, arranged in one or two concentric rings around central pistil cluster.Filaments.—3 mm-4 mm in length, color 46B.Anthers.—Develop within orange-red membrane, color 45C.Pollen.—Appears as membrane is shed, color 9A and bright, quantity moderate.Pistils.—Approximately 12 in number.Style.—Approximately 3 mm in length, color 17C.Stigma.—Conical, color 34C.Ovary.—Not observed.Seed: Extremely fine, dust-like, color dark grey. | 6,047 |
PP35582 | DETAILED BOTANICAL DESCRIPTION The plant descriptions and measurements were taken indoors in Gilroy, California in November 2022 on about 11 week old plants. Unrooted cuttings had been planted, 4 plants per pot, in 6 inch pots in August 2022. The plants were pinched and moved to short days in September 2022 to induce flowering. Color references are made to The Royal Horticultural Society Colour Chart (RHS) 2001. TABLE 1DIFFERENCES BETWEEN THE NEW VARIETY‘CIDZ0119’ AND A MOST SIMILAR VARIETY:‘Yobaton Rouge’,U.S. Plant Pat.‘CIDZ0119’No. 11,283Flower size:LargerSmallerFlower color pattern:Red near apex,Red with yellowyellow at basestripesFlowering response:FasterSlowerPollen:AbundantAbsentPlant:Form, growth and habit.—Herbaceous pot-type, stems upright to moderately angled, freely branching, strong and medium growth habit.Plant height.—18.0 cm.Plant height(inflorescence included).—22.0 cm.Plant width.—34.0 cm.Roots:Number of days to initiate roots.—4 days at about 22 degrees C.Number of days to produce a rooted cutting.—10-12 days at 22 degrees C.Type.—Fine, fibrous, free branching.Color.—RHS N155B but whiter.Foliage:Arrangement.—Alternate.Immature, leaf color, upper surface.—RHS 137B.Lower surface.—RHS 137C.Mature, leaf color, upper surface.—RHS 139A.Lower surface.—RHS 137A.Length.—5.2-6.8 cm.Width.—3.8-6.0 cm.Shape.—Ovate.Base shape.—Attenuate.Apex shape.—Mucronulate.Margin.—Palmately lobed; irregularly incised, somewhat serrate.Texture, upper surface.—Puberlulent.Lower surface.—Puberlulent.Color of veins, upper surface.—RHS 138C.Color of veins, lower surface.—RHS 138B.Pattern of veining.—Palmate.Petiole color.—RHS 139A.Length.—2.8-3.3 cm.Diameter.—0.3-1.0 cm.Texture.—Puberlulent.Stem:Quantity of main branches per plant.—4-5.Color of stem.—RHS 137B.Length of stem.—12.0-14.0 cm.Diameter.—0.3-0.4 cm.Length of internodes.—0.8-2.4 cm.Texture.—Puberlulent.Color of peduncle.—RHS 137C.Length of peduncle.—3.0-8.0 cm.Peduncle diameter.—0.2-0.25 cm.Texture.—Puberlulent.Inflorescence:Type.—Compositae type, single-type inflorescences borne terminally above foliage, ray florets arranged acropetally on a capitulum.Quantity of short days to flowering(response time).—7 weeks.Natural season flowering.—Not determined for this variety.Quantity of inflorescences per plant.—18-23.Lastingness of individual blooms on the plant.—4 weeks.Fragrance.—Slightly spicy.Bud (just when opening/showing color):Color.—RHS 1A.Length.—0.7 cm.Width.—0.9 cm.Shape.—Oblate.Immature inflorescence:Diameter.—5.7 cm.Color of ray florets, upper surface.—Closest to RHS 46A near the apex, and RHS 3A near the base.Lower surface.—RHS 1A with some reddish tones closest to RHS 46A near apex.Mature inflorescence:Diameter.—6.9-8.0 cm.Depth.—2.7 cm.Total diameter of disc.—1.6 cm.Receptacle color.—RHS 145A.Receptacle height.—0.5 cm.Receptacle diameter.—0.6 cm.Ray florets:Average quantity of florets.—29.Color of florets, upper surface.—Closest to RHS 46A near the apex and RHS 4A towards the base.Lower surface.—Closest to RHS 1A with reddish tones closest to RHS 46A near the apex.Longitudinal axis.—Straight.Length.—3.3-3.8 cm.Width.—0.8-1.0 cm.Shape.—Eliptical.Apex shape.—Obtuse.Margin.—Entire.Texture, upper surface.—Papillose.Lower surface.—Papillose.Disc florets:Average quantity of florets.—245.Color of florets.—RHS 7A.Length.—0.7 cm.Width.—0.1 cm.Shape.—Tubular, elongated.Apex shape.—Acute, 5 pointed.Phyllaries:Quantity.—Average 25.Color, upper surface.—RHS 137A.Lower surface.—RHS 137B.Length.—0.8-1.0 cm.Width.—0.15-0.2 cm.Shape.—Lanceolate.Apex shape.—Acute.Base.—Fused.Margins.—Entire; slightly papery.Texture, upper surface.—Glabrous.Lower surface.—Puberlulent.Reproductive organs:Pistil.—1, found on both types of florets.Length.—0.5 cm.Style color.—RHS 150D.Style length.—0.4 cm.Stigma color.—RHS 4B.Stigma shape.—Bi-parted.Ovary color.—RHS 155C but more translucent.Stamens.—4, found on only on the disc florets.Color of filaments.—RHS 155C.Length filaments.—0.2 cm.Anther color.—RHS 12A.Anther length.—0.15 cm.Anther shape.—Oval.Color of pollen.—RHS 13A.Pollen amount.—Abundant.Fertility/seed set.—Has not been observed to date.Disease/pest resistance.—Has not been observed to date. | 4,202 |
PP35583 | DETAILED BOTANICAL DESCRIPTION Plants used in the aforementioned photographs and described herewith in detail were grown during the autumn and early winter in 10.5-cm containers in an outdoor nursery in Higashiomi, Shiga, Japan and under cultural practices typical of commercialEuphorbiaproduction. During the production of the plants, day temperatures averaged 23 C and night temperatures averaged 13 C. Plants were six months old when the photographs and the description were taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, 2015 Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:Euphorbia pulcherrimaWilld. ex Klotzsch XEuphorbia cornastra‘BONPRI 1756’.Parentage: Naturally-occurring whole plant mutation of a proprietary selection ofEuphorbia pulcherrimaWilld. ex Klotzsch XEuphorbia cornastraidentified as code number Eu 15-16, not patented.Propagation:Type.—Terminal vegetative cuttings.Time to initiate roots, summer.—About ten days at temperatures about 20 C to 21 C.Time to initiate roots, winter.—About twelve days at temperatures about 20 C to 21 C.Time to produce a rooted young plant, summer.—About 24 days at temperatures about 20 C to 21 C. Time to produce a rooted young plant, winter.—About 28 days at temperatures about 20 C to 21 C.Root description.—Fibrous; typically white in color, actual color of the roots is dependent on substrate composition, water quality, fertilizers, substrate temperature and physiological age of roots.Rooting habit.—Freely branching; medium density.Plant description:Plant habit and form.—Upright and mounded plant habit; inverted triangle; inflorescences positioned above the foliar plane; vigorous growth habit.Plant height.—About 17 cm.Plant diameter or spread.—About 24.2 cm.Lateral branch description.—Branching habit: Freely branching habit, about five lateral branches develop per plant. Length: About 10 cm. Diameter: About 3.5 mm. Internode length: About 1.4 cm. Aspect: Mostly upright to somewhat outward. Strength: Moderately strong. Texture and luster: Smooth, glabrous; glossy. Color: Close to 146A.Leaf description.—Arrangement: Alternate, simple. Length: About 6.2 cm. Width: About 3.7 cm. Shape: Lanceolate. Apex: Acute. Base: Rounded. Margin: Mostly entire, occasionally with few shallow lobes. Venation pattern: Pinnate, reticulate. Texture and luster, upper and lower surfaces: Rugose, glabrous; matte. Color: When expanding and fully developed leaves, upper surface: Close to NN137A; venation, close to 138B. When expanded and fully developed leaves, lower surface: Close to NN137C; venation, close to 138B. Petioles: Length: About 1.9 cm. Diameter: About 1.5 mm. Texture, upper and lower surfaces: Smooth, glabrous. Color, upper and lower surfaces: Close to 138B.Inflorescence description:Inflorescence type and habit.—Inflorescences are compound corymbs of cyathia with numerous flower bracts subtending the cyathia; inflorescences positioned above the foliar plane.Quantity of inflorescences.—One per lateral branch, about five inflorescences develop per plant.Inflorescence diameter.—About 16.4 cm.Inflorescence height.—About 6.5 cm.Fragrance.—None detected.Natural flowering season.—Plants typically flower during the autumn and winter in Japan; inflorescence initiation and development can also be induced under artificial long nyctoperiod and short photoperiod conditions; early flowering response, plants flower about 50 days under natural season or photoinductive conditions in Japan.Post-production longevity.—Good post-production longevity; plants of the newEuphorbiamaintain good substance and bract color for about six to eight weeks.Flower bracts.—Quantity per inflorescence: About eleven. Length: About 2.3 cm. Width: About 1.5 cm. Aspect: Mostly horizontal and flat. Shape: Elliptic. Apex: Acute. Base: Attenuate. Margin: Mostly entire, occasionally with few shallow lobes. Texture and luster, upper surface: Smooth, glabrous; matte. Texture and luster, lower surface: Rough, glabrous; matte. Venation pattern: Pinnate, reticulate. Color: Transitional bracts, upper surface: Random sectors, close to 202A and 46A. Transitional bracts, lower surface: Random sectors, close to 143C and 53A. Developing bracts, upper surface: Close to N45A. Developing bracts, lower surface: Close to 53A. Fully expanded bracts, upper surface: Close to N45A; venation, close to N45C; color does not change with subsequent development. Fully expanded bracts, lower surface: Close to 45A; venation, close to 47C; color does not change with subsequent development. Flower bract petioles: Length: About 5 mm. Diameter: About 1.3 mm. Texture, upper and lower surfaces: Smooth, glabrous. Color, upper and lower surfaces: Close to 45A.Cyathia.—Quantity per corymb: About 16. Diameter of cyathia cluster: About 3 cm. Height, individual cyathium: About 5.2 mm. Diameter, individual cyathium: About 3.9 mm. Shape, individual cyathium: Globose. Color: Distally, close to 46A and proximally, close to 145A. Nectaries: Quantity per cyathium: Three. Size: About 2 mm by 3.3 mm. Texture: Smooth, glabrous. Color: Close to 145A with edge, close to 46C.Peduncles.—Length: About 1.6 mm. Diameter: About 1.3 mm. Texture, upper and lower surfaces: Smooth, glabrous. Aspect: Mostly upright. Color, upper and lower surfaces: Close to 144B.Reproductive organs.—To date, stamen and pistil development have not been observed on plants of the newEuphorbia.Seeds and fruits.—To date, seed and fruit development have not been observed on plants of the newEuphorbia.Pathogen & pest resistance: To date, plants of the newEuphorbiahave not been shown to be resistant to pathogens and pests common toEuphorbiaplants.Temperature tolerance: Plants of the newEuphorbiahave been observed to tolerate temperatures ranging from about 8 C to about 40 C. | 5,900 |
PP35584 | DETAILED BOTANICAL DESCRIPTION The aforementioned photographs and following observations and measurements describe plants grown during the autumn in 10.5-cm containers in a glass-covered greenhouse in Heemskerk, The Netherlands and under cultural practices typically used in commercialPhalaenopsisproduction. Plants were 18 months old when the photographs and description were taken. During the first twelve months of production of the plants, day and night temperatures averaged 27 C. During the final six months of production of the plants, day temperatures ranged from 20 C to 22 C and night temperatures ranged from 18 C to 20 C. During the production of the plants, light levels ranged from a minimum of 5,000 lux to a maximum of 10,000 lux. In the following description, color references are made to The Royal Horticultural Society Colour Chart, 2015 Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:Phalaenopsis hybrida‘Good Reason’.Parentage:Female, or seed, parent.—Phalaenopsis hybrida‘Black Stripes’, not patented.Male parent.—Phalaenopsis hybrida‘Elegant Wibi Soerjadi’, not patented.Propagation:Type.—By in vitro meristem propagation.Time to initiate roots, summer and winter.—About two weeks at temperatures about 28 C to 30 C.Time to produce a rooted young plant, summer and winter.—About 20 to 25 weeks at temperatures about 28 C to 30 C.Root description.—Thin, fibrous; typically light yellowish white in color; actual color of the roots is dependent on substrate composition, water quality, fertilizer, substrate temperature and age of roots.Rooting habit.—Freely branching; medium density.Plant description:Plant form and growth habit.—Herbaceous epiphyte; broadly upright plant habit with typically two inflorescences per plant, each inflorescence with numerous flowers; monopodial; moderately vigorous growth habit and moderate growth rate.Plant height, substrate level to top of foliar plane.—About 20 cm.Plant height, substrate level to top of inflorescences.—About 49.3 cm.Plant diameter or spread.—About 29 cm.Leaf description:Arrangement and quantity.—Distichous, simple; sessile; about five leaves per plant.Length.—About 18.6 cm.Width.—About 7.9 cm.Aspect.—Mostly upright to outwardly arching.Shape.—Narrowly obovate to elliptic-oblong; slightly carinate.Apex.—Unequal obtuse to unequal and broadly acute.Base.—Sheathing. Sheath length: About 1.9 cm. Sheath width: About 1.4 cm. Sheath color: Close to 143B; towards the margins, close to 143A.Margin.—Entire; not undulate.Texture and luster, upper and lower surfaces.—Smooth, glabrous; slightly glossy.Venation pattern.—Camptodromous.Color.—Developing leaves, upper surface: Close to 137A. Developing leaves, lower surface: Close to 146A. Fully expanded leaves, upper surface: Close to NN137B; venation, close to 147A. Fully expanded leaves, lower surface: Close to 146A to 146B; venation, close to 144B.Inflorescence description:Appearance and flowering habit.—Showy zygomorphic flowers arranged on axillary branched racemes; typically two inflorescences per plant; each inflorescence with about 14 flowers; flowers face outwardly on arching inflorescences supported by upright peduncles; flowers with three petals, two lateral petals and one center petal transformed into a labellum and three sepals.Fragrance.—None detected.Time to flower.—Plants begin flowering about six months after planting; plants flower naturally during the winter into the spring.Flower longevity.—Long flowering period, individual flowers maintain good substance for about ten weeks on the plant; flowers not persistent.Inflorescence length(lowermost flower to inflorescence apex).—About 27 cm.Inflorescence width.—About 14.7 cm.Flower buds.—Height: About 2.1 cm. Diameter: About 1.5 cm by 1.9 cm. Shape: Broadly ovate. Color: Close to 144C; venation, close to N77B and N77C.Flower size.—About 7.8 cm (vertical) by 9.4 cm (horizontal).Flower depth.—About 3.2 cm.Petals, quantity and arrangement.—Three, two lateral petals and one center petal transformed into a labellum.Lateral petals.—Length: About 4.5 cm. Width: About 5.5 cm. Shape: Roughly reniform to close to lunate. Apex: Obtuse to broadly and shallowly retuse. Margin: Entire. Texture and luster, upper and lower surfaces: Smooth, glabrous, velvety; matte. Color: When opening, upper surface: Close to lighter than NN155D; at the base, close to NN78A; venation, close to N78A; marginal edges (about 1 mm in width) do not have conspicuous venation. When opening, lower surface: Close to NN155C; venation, close to N78A and N78B; marginal edges (about 1 mm in width) do no have conspicuous venation. Fully opened, upper surface: Close to lighter than NN155D; towards the base, close to N75B to N75C and at the base, close to NN78A; venation, close to N78A; marginal edges (about 1 mm in width) do not have conspicuous venation; color does not change with subsequent development. Fully opened, lower surface: Close to NN155C; venation, close to N78A and N78B; marginal edges (about 1 mm in width) do no have conspicuous venation; color does not change with subsequent development.Labella.—Appearance: Three-parted with two lateral lobes and a central lobe. Length, lateral lobes: About 2.2 cm. Width, lateral lobes: About 1.4 cm. Length, central lobe: About 2.1 cm. Width, central lobe: About 7 mm to 21 mm. Length, cirrose tips: About 1.4 cm. Shape, lateral lobes: Obovate. Shape, central lobe: Deltoid with an elongated apex. Apex, lateral lobes: Obtuse. Apex, central lobe: Cleft with two recurved cirrose apices. Margins, lateral and central lobes: Entire. Texture and luster, lateral and central lobes, upper and lower surfaces: Smooth, glabrous, moderately velvety; matte. Callosities: Located at the base of the labellum and attachment point of the lateral petals; about 4.5 mm in length, about 6 mm in width and about 5 mm in height. Color: When opening, upper surface: Lateral lobes: Close to 75C; towards the upper margin edges, close to N78A; lower margin edges, close to 3A; venation, close to N79C. Central lobe: Close to NN155D with stripes, blotches and venation, close to 64A; towards the upper margin edges, close to NN78A; towards the base of the broad part, blotched and heavily tinged with close to 8C; at the base, close to 75B; radial stripes, close to 59A; cirrose apices, close to NN78A with margins, close to NN155D. Callosities: Close to 13B with fine dots, close to 181A. When opening, lower surface: Lateral lobes: Close to a blend of 75B and 198C; lower margin, close to 5A; towards the base, venation, close to 71B. Central lobe: Close to NN155B; wide parts and margins, densely veined, close to N78A and 78B; at the base, close to 157A and 157B tinged with close to 5C; cirrose apices, close to NN78A with margins, close to NN155D. Fully opened, upper surface: Lateral lobes: Close to 75C; towards the upper margin edges, close to N78A; lower margin edges, close to 12A to 12B; venation, close to N79C. Central lobe: Close to NN155D with stripes, blotches and venation, close to 64A; towards the upper margin edges, close to NN78A; towards the base of the broad part, blotched and heavily tinged with close to 8C; at the base, close to 75B; radial stripes, close to 59A; cirrose apices, close to NN78A with margins, close to NN155D. Callosities: Close to 13A with fine dots, close to 181A. Fully opened, lower surface: Lateral lobes: Close to 76C; lower margin, close to 12B; towards the base, venation, close to 71B. Central lobe: Close to NN155B; wide parts and margins, densely veined, close to N78A and 78B; at the base, close to 157B tinged with close to 5C; cirrose apices, close to NN78A with margins, close to NN155D.Sepals.—Quantity and arrangement: Three, one upper dorsal sepal and two lower lateral sepals. Length, dorsal and lateral sepals: About 4.5 cm. Width, dorsal sepal: About 3.5 cm. Width, lateral sepal: About 2.8 cm. Shape, dorsal sepal: Obovate to broadly elliptic. Shape, lateral sepals: Ovate. Apex, dorsal sepal: Obtuse. Apex, lateral sepals: Bluntly acute. Base, dorsal and lateral sepals: Truncate. Margin, dorsal and lateral sepals: Entire. Texture and luster, dorsal and lateral sepals, upper and lateral surfaces: Smooth, glabrous, moderately velvety; matte. Color, dorsal sepal: When opening, upper surface: Close to lighter than NN155D; at the base, close to NN78A; venation, close to N78A; marginal edges (about 1 mm in width) do not have conspicuous venation. When opening, lower surface: Close to 157A; center, close to 145D; venation, close to N78B; marginal edges (about 1 mm in width) do no have conspicuous venation. Fully opened, upper surface: Close to lighter than NN155D; towards the base, close to N75B to N75C and at the base, close to NN78A; venation, close to N78A; marginal edges (about 1 mm in width) do not have conspicuous venation; color does not change with subsequent development. Fully opened, lower surface: Close to lighter than NN155C; venation, close to N78A and N78B; marginal edges (about 1 mm in width) do no have conspicuous venation; color does not change with subsequent development. Color, lateral sepals: When opening, upper surface: Close 157C to 157D; towards the margins, close to NN155D; at the base, fine dots, close to 71A; venation, close to N78A; marginal edges (about 1 mm in width) do not have conspicuous venation. When opening, lower surface: Close to 145C; venation, close to N78B; marginal edges (about 1 mm in width) do no have conspicuous venation. Fully opened, upper surface: Close to NN155C; at the base, close to NN78A with fine dots, close to 70A; venation, close to N78A; marginal edges (about 1 mm in width) do not have conspicuous venation; color does not change with subsequent development. Fully opened, lower surface: Close to NN155D; center and towards the base, close to 196A; venation, close to N78C and N78D; marginal edges (about 1 mm in width) do no have conspicuous venation; color does not change with subsequent development.Peduncles.—Length: About 57.3 cm. Diameter: About 5.5 mm. Strength: Strong. Aspect: Upright to outwardly arching. Texture and luster: Smooth, glabrous; matte. Color: Close to a blend of 197A and N200A; densely covered with fine dots and marbling, close to 148B.Pedicels.—Length: About 3.6 cm. Diameter: About 3 mm. Strength: Moderately strong. Aspect: About 50 degrees from peduncle axis. Texture and luster: Smooth, glabrous; matte. Color: Close to N148D; distally, close to 76C to 76D.Reproductive organs.—Androecium: Column length: About 1 cm. Column width: About 6 mm. Column color: Close to N78D; distally, close to NN155D. Pollinia quantity: Two. Pollinia diameter (per two pollinia): About 2.5 mm. Pollinia color: Close to 23A. Gynoecium: Stigma length: About 4 mm. Stigma width: About 5 mm. Stigma shape: Reniform. Stigma color: Close to N155A. Ovary length: About 1 cm. Ovary diameter: About 1 mm. Ovary color: Close to N144B. Seeds and fruits: To date, seed and fruit development have not been observed on plants of the newPhalaenopsis.Pathogen & pest resistance: To date, plants of the newPhalaenopsishave not been shown to be resistant to pathogens and pests common toPhalaenopsisplants.Temperature tolerance: Plants of the newPhalaenopsishave been observed to tolerate high temperatures about 40 C and are suitable for USDA Hardiness Zones 10 to 12. | 11,391 |
PP35585 | DETAILED BOTANICAL DESCRIPTION The aforementioned photographs and following observations, measurements and values describe plants grown during the summer in 16.5-cm containers in a polyethylene-covered greenhouse in Encinitas, California and under cultural practices typical of commercial New GuineaImpatiensproduction. During the production of the plants, day temperatures averaged 25 C, night temperatures averaged 18 C and light levels ranged from 4,000 to 4,500 lux. Plants were 16 weeks old when the photographs were taken and 14 weeks old when the description was taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, 2015 Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:Impatiens hawkeri‘Dongimeguinor’.Parentage:Female, or seed, parent.—Proprietary selection ofImpatiens hawkeriidentified as code number NN13-002477-003, not patented.Male, or pollen, parent.—Proprietary selection ofImpatiens hawkeriidentified as code number NN15-713729-004, not patented.Propagation:Type.—By terminal vegetative cuttings.Time to initiate roots, summer and winter.—About five to seven days at temperatures about 27 C and night temperatures about 20 C.Time to produce a rooted young plant, summer and winter.—About three weeks at day temperatures about 27 C and night temperatures about 20 C.Root description.—Fine, fibrous; typically white in color, actual color of the roots is dependent on substrate composition, water quality, fertilizers, substrate temperature and age of roots.Rooting habit.—Freely branching; dense.Plant description:Plant and growth habit.—Upright to outwardly spreading and mounding plant habit; broad inverted triangle in overall shape; freely branching habit with lateral branches potentially developing at every node; dense and full appearance; vigorous growth habit and moderate to rapid growth rate.Plant height.—About 30 cm.Plant diameter.—About 44 cm.Lateral branch description:Length.—About 26 cm.Diameter.—About 1 cm.Internode length.—About 5 cm to 8 cm.Strength.—Strong; flexible.Aspect.—Initially upright to outwardly spreading.Texture and luster.—Smooth, glabrous; moderately glossy.Color, developing and developed.—Close to 183A.Leaf description:Arrangement.—Typically alternate or in whorls; simple.Length.—About 9 cm to 12 cm.Width.—About 3 cm to 3.75 cm.Shape.—Elliptic.Apex.—Acuminate.Base.—Cuneate.Margin.—Serrate with ciliation.Texture and luster, upper and lower surfaces.—Smooth, glabrous; somewhat glossy.Venation pattern.—Pinnate; arcuate.Color.—Developing leaves, upper surface: Close to 147A. Developing leaves, lower surface: Close to 147B. Fully expanded leaves, upper surface: Close to 147A slightly tinged with close to 183A; midvein, close to 183A, and lateral venation, close to 147A. Fully expanded leaves, lower surface: Close to 183A; midvein, close to 183A; lateral venation, darker than 183A.Petiole length.—About 2.25 cm.Petiole diameter.—About 3 mm.Petiole texture and luster, upper and lower surfaces.—Smooth, glabrous; moderately glossy.Petiole color, upper and lower surfaces.—Close to 183A and 183B.Flower description:Flower type and flowering habit.—Single-type, medium-sized rounded axillary flowers with ruffled margins; freely flowering habit, typically about six to eight flower buds and open flowers per lateral branch; flowers positioned above and beyond the foliar plane, flowers typically face mostly upright to outwardly.Flower longevity.—Flowers typically last about four to seven days on the plant under greenhouse conditions; petals self-cleaning, gynoecium persistent.Fragrance.—None detected.Natural flowering season.—Year-round under greenhouse conditions; in the garden, flowering from spring until fall in California; early flowering habit, plants typically begin flowering about eleven weeks after planting.Flower buds.—Length: About 1.3 cm. Diameter: About 7 mm. Shape: Ovoid. Texture and luster: Smooth, glabrous; somewhat glossy. Color: Close to 33A.Flower diameter.—About 5 cm by 5.25 cm.Flower depth.—About 1.4 cm.Petals.—Quantity and arrangement: Five per flower in a single whorl. Length, banner petals: About 2.6 cm. Length, lateral petals: About 2.25 cm. Length, lower petals: About 2.1 cm. Width, banner petal: About 3.75 cm. Width, lateral petals: About 3 cm. Width, lower petals: About 2.5 cm. Shape, all petals: Spatulate to broadly obcordate. Apex, all petals: Emarginate with occasional and random indentations. Base, all petals: Cuneate to attenuate. Margin, all petals: Mostly entire with occasional and random indentations; undulate and ruffled appearance. Texture and luster, all petals, upper surface: Smooth, glabrous; velvety; slightly glossy; iridescent. Texture and luster, all petals, lower surface: Smooth, glabrous; slightly glossy. Color, all petals: When opening and fully opened, upper surface: Close to 33A; towards the center, tinged with 52C and at the center, close to 53A; venation, similar to lamina colors; colors do not change with subsequent development. When opening and fully opened, lower surface: Close to 33A; midvein, banner petal, close to 144A; midvein, lateral and lower petals, close to 33A; colors do not change with subsequent development.Sepals.—Quantity and arrangement: Three in a single whorl; one modified into an elongated spur. Lateral sepal length: About 6 mm. Lateral sepal width: About 3.5 mm. Spur sepal length: About 1.75 cm. Spur sepal width: About 1 cm. Sepal shape: Deltoid. Sepal apex: Acuminate. Sepal base: Truncate. Sepal margin: Entire. Sepal texture and luster, upper and lower surfaces: Smooth, glabrous; slightly glossy. Sepal color, upper and lower surfaces: Translucent, close to 157A; towards the base, tinged with close to 60A. Spur length: About 3.25 cm. Spur diameter: At flower, about 3 mm; at apex, less than 1 mm. Spur shape: Acicular. Spur texture and luster: Smooth, glabrous; moderately glossy. Spur color: Close to 59A.Peduncles.—Length: About 4.5 cm. Diameter: About 1.75 mm. Angle: About 45 degrees from stem axis. Strength: Strong; flexible. Texture and luster: Smooth, glabrous; somewhat glossy. Color: Close to 144A variably overlain with close to 59A.Reproductive organs.—Stamens: Quantity: Five fused at anthers; filaments free. Anther size: About 1 mm by 0.5 mm. Anther shape: Oblong. Anther color: Close to N155B. Pollen amount: None observed. Pistils: Quantity per flower: One. Pistil length: About 2.5 mm. Stigma shape: Crested. Stigma color: Close to 144A. Style color: Close to 144A. Ovary color: Close to 144A.Seeds and fruits.—To date, seed and fruit production has not been observed on plants of the newImpatiens.Pathogen & pest resistance: To date, plants of the newImpatienshave not been observed to be resistant to pathogens and pests common toImpatiensplants.Garden performance: Plants of the newImpatienshave been observed to have good garden performance and tolerate temperatures ranging from about 5 C to about 40 C. | 7,020 |
PP35586 | DETAILED BOTANICAL DESCRIPTION The aforementioned photographs and following observations, measurements and values describe plants grown during the summer in 16.5-cm containers in a polyethylene-covered greenhouse in Encinitas, California and under cultural practices typical of commercial New GuineaImpatiensproduction. During the production of the plants, day temperatures averaged 25 C, night temperatures averaged 18 C and light levels ranged from 4,000 to 4,500 lux. Plants were 16 weeks old when the photographs were taken and 14 weeks old when the description was taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, 2015 Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:Impatiens hawkeri‘Dongimeguinpin’.Parentage:Female, or seed, parent.—Impatiens hawkeri‘Dongimprolhopin’, disclosed in U.S. Plant Pat. No. 32,148.Male, or pollen, parent.—Proprietary selection ofImpatiens hawkeriidentified as code number NN13-002477-003, not patented.Propagation:Type.—By terminal vegetative cuttings.Time to initiate roots, summer and winter.—About five to seven days at temperatures about 27 C and night temperatures about 20 C.Time to produce a rooted young plant, summer and winter.—About three weeks at day temperatures about 27 C and night temperatures about 20 C.Root description.—Fine, fibrous; typically white in color, actual color of the roots is dependent on substrate composition, water quality, fertilizers, substrate temperature and age of roots.Rooting habit.—Freely branching; dense.Plant description:Plant and growth habit.—Upright to outwardly spreading and mounding plant habit; broad inverted triangle in overall shape; freely branching habit with lateral branches potentially developing at every node; dense and full appearance; vigorous growth habit and moderate to rapid growth rate.Plant height.—About 29 cm.Plant diameter.—About 38 cm.Lateral branch description:Length.—About 24 cm.Diameter.—About 1 cm.Internode length.—About 6 cm to 8 cm.Strength.—Strong; flexible.Aspect.—Initially upright to outwardly spreading.Texture and luster.—Smooth, glabrous; moderately glossy.Color, developing and developed.—Close to 187A.Leaf description:Arrangement.—Typically alternate or in whorls; simple.Length.—About 9.5 cm to 11.5 cm.Width.—About 3.25 cm to 4 cm.Shape.—Elliptic.Apex.—Acuminate.Base.—Cuneate.Margin.—Serrate with ciliation.Texture and luster, upper and lower surfaces.—Smooth, glabrous; somewhat glossy.Venation pattern.—Pinnate; arcuate.Color.—Developing leaves, upper surface: Close to 147A. Developing leaves, lower surface: Close to 183A. Fully expanded leaves, upper surface: Darker green than 147A; midvein, close to 187A, and lateral venation, darker green than 147A. Fully expanded leaves, lower surface: Close to 187A; midvein and lateral venation, close to 187A.Petiole length.—About 3.5 cm.Petiole diameter.—About 3.5 mm.Petiole texture and luster, upper and lower surfaces.—Smooth, glabrous; moderately glossy.Petiole color, upper and lower surfaces.—Close to 183A.Flower description:Flower type and flowering habit.—Single-type, medium-sized rounded axillary flowers with slightly undulate margins; freely flowering habit, typically about six to nine flower buds and open flowers per lateral branch; flowers positioned above and beyond the foliar plane, flowers typically face mostly upright to outwardly.Flower longevity.—Flowers typically last about four to seven days on the plant under greenhouse conditions; petals self-cleaning, gynoecium persistent.Fragrance.—None detected.Natural flowering season.—Year-round under greenhouse conditions; in the garden, flowering from spring until fall in California; early flowering habit, plants typically begin flowering about eleven weeks after planting.Flower buds.—Length: About 1.5 cm. Diameter: About 8 mm. Shape: Ovoid. Texture and luster: Smooth, glabrous; somewhat glossy. Color: Close to 52A.Flower diameter.—About 5 cm by 5.25 cm.Flower depth.—About 1.5 cm.Petals.—Quantity and arrangement: Five per flower in a single whorl. Length, banner petals: About 2.5 cm. Length, lateral petals: About 2.2 cm. Length, lower petals: About 2.3 cm. Width, banner petal: About 3.75 cm. Width, lateral petals: About 3 cm. Width, lower petals: About 2.3 cm. Shape, all petals: Spatulate to broadly obcordate. Apex, all petals: Emarginate with occasional and random indentations. Base, all petals: Cuneate to attenuate. Margin, all petals: Mostly entire with occasional and random indentations; slightly undulate. Texture and luster, all petals, upper surface: Smooth, glabrous; velvety; slightly glossy; iridescent. Texture and luster, all petals, lower surface: Smooth, glabrous; slightly glossy. Color, all petals: When opening and fully opened, upper surface: Close to 52A; towards the center and at the center, close to 53A; venation, similar to lamina colors; colors do not change with subsequent development. When opening and fully opened, lower surface: Close to 52A; midvein, banner petal, close to 144A; midvein, lateral and lower petals, close to 52B; colors do not change with subsequent development.Sepals.—Quantity and arrangement: Three in a single whorl; one modified into an elongated spur. Lateral sepal length: About 5.5 mm. Lateral sepal width: About 3.25 mm. Spur sepal length: About 2 cm. Spur sepal width: About 1 cm. Sepal shape: Deltoid. Sepal apex: Acuminate. Sepal base: Truncate. Sepal margin: Entire. Sepal texture and luster, upper and lower surfaces: Smooth, glabrous; slightly glossy. Sepal color, upper and lower surfaces: Translucent, close to 157A; towards the base, tinged with close to 60A. Spur length: About 3.5 cm. Spur diameter: At flower, about 3.25 mm; at apex, less than 1 mm. Spur shape: Acicular. Spur texture and luster: Smooth, glabrous; moderately glossy. Spur color: Close to 59A.Peduncles.—Length: About 4.5 cm. Diameter: About 1.75 mm to 2 mm. Angle: About 45 degrees from stem axis. Strength: Strong; flexible. Texture and luster: Smooth, glabrous; somewhat glossy. Color: Close to 144A variably overlain with close to 59A.Reproductive organs.—Stamens: Quantity: Five fused at anthers; filaments free. Anther size: About 1 mm by 0.75 mm. Anther shape: Oblong. Anther color: Close to N155B. Pollen amount: None observed. Pistils: Quantity per flower: One. Pistil length: About 2.25 mm. Stigma shape: Crested. Stigma color: Close to 144A. Style color: Close to 144A. Ovary color: Close to 144A.Seeds and fruits.—To date, seed and fruit production has not been observed on plants of the newImpatiens.Pathogen & pest resistance: To date, plants of the newImpatienshave not been observed to be resistant to pathogens and pests common toImpatiensplants.Garden performance: Plants of the newImpatienshave been observed to have good garden performance and tolerate temperatures ranging from about 5 C to about 40 C. | 6,953 |
PP35587 | DETAILED BOTANICAL DESCRIPTION The aforementioned photograph and following observations, measurements and values describe plants grown during the spring and summer in 22-cm containers in a glass-covered greenhouse in Rheinberg, Germany and under cultural practices typical of commercialPetuniaproduction. During the production of the plants, day and night temperatures averaged 18 C and light levels averaged 4,500 lux. Plants were twelve weeks old when the photograph was taken and 25 weeks old when the description was taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, Fifth Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:PetuniaXhybrida‘Dopetsmarwibla’.Parentage:Female, or seed, parent.—Proprietary selection ofPetuniaXhybridaidentified as code number TT19-K0808, not patented.Male, or pollen, parent.—Proprietary selection ofPetuniaXhybridaidentified as code number TT19-K0896, not patented.Propagation:Type.—By terminal vegetative cuttings.Time to initiate roots, summer.—About five days at temperatures about 20 C.Time to initiate roots, winter.—About seven days at temperatures about 20 C.Time to produce a rooted young plant, summer.—About three weeks at temperatures about 20 C.Time to produce a rooted young plant, winter.—About four weeks at temperatures about 20 C.Root description.—Fine, fibrous; close to 155B in color, actual color of the roots is dependent on substrate composition, water quality, fertilizers, substrate temperature and age of roots.Rooting habit.—Freely branching; dense.Plant description:Plant and growth habit.—Semi-upright and uniformly mounding plant habit; freely branching habit with about five to six primary lateral branches each with about seven secondary branches developing after pinching; vigorous growth habit and moderate growth rate.Plant height, soil level to top of foliar plane.—About 19 cm.Plant height, soil level to top of floral plane.—About 21 cm.Plant diameter.—About 65.5 cm.Lateral branch description:Length.—About 36 cm.Diameter.—About 4 mm.Internode length.—About 1.5 cm.Strength.—Moderately strong.Aspect.—Initially upright to somewhat outwardly spreading.Texture and luster.—Pubescent; semi-glossy.Color, developing.—Close to 143B.Color, developed.—Close to 144B; at the internodes, close to 144A to 144B.Leaf description:Arrangement.—Before flowering, alternate; after flowering, opposite; simple.Length.—About 3.5 cm.Width.—About 1.2 cm.Shape.—Spatulate.Apex.—Obtuse.Base.—Attenuate.Margin.—Entire.Texture and luster, upper and lower surfaces.—Pubescent; leathery; semi-glossy.Venation pattern.—Pinnate; arcuate.Color.—Developing leaves, upper surface: Close to 143A. Developing leaves, lower surface: Close to 143B. Fully expanded leaves, upper surface: Close to 146A; venation, close to 146A. Fully expanded leaves, lower surface: Close to 146B; venation, close to 146B.Petioles.—Length: About 3 mm. Diameter: About 2 mm. Strength: Moderately strong; firm. Texture and luster, upper and lower surfaces: Smooth, glabrous; matte. Color, upper and lower surfaces: Close to 143B.Flower description:Flower type and flowering habit.—Single salverform flowers arising from leaf axils; freely flowering habit with usually about 364 flowers and flower buds developing per plant during the flowering season; flowers face mostly upright to outwardly.Fragrance.—None detected.Natural flowering season.—Plants flower continuously during the spring and summer in Germany; early flowering habit, plants typically beginning flowering about nine weeks after planting.Flower longevity.—Individual flowers last about two to three days on the plant; flowers persistent.Flower buds.—Length: About 4.5 cm. Diameter: About 6.5 mm. Shape: Ovoid. Texture and luster: Rippled; semi-glossy. Color: Close to N144B and N77A.Flower diameter.—About 5.1 cm by 6.4 cm.Flower depth(height).—About 5.4 cm.Flower throat diameter.—About 1.2 cm.Flower tube length.—About 2.7 cm.Flower tube diameter, proximally.—About 5.2 mm.Corolla.—Arrangement: Five petals fused at the base and opening into a flared trumpet. Petal lobe length (from throat): About 2.4 cm. Petal lobe width: About 3.4 cm. Petal shape: Roughly spatulate. Petal apex: Obtuse. Petal margin: Entire; slightly undulate. Petal texture and luster, upper and lower surfaces: Rippled, glabrous; semi-glossy. Throat texture and luster: Rippled; semi-glossy. Tube texture and luster: Rippled; semi-glossy. Color: Petal lobe, when opening, upper surface: Close to N186A. Petal lobe, when opening, lower surface: Close to N186C. Petal lobe, fully opened, upper surface: Star-shaped pattern, close to 187A and 8C; venation, close to N186A; color does not change with subsequent development. Petal lobe, fully opened, lower surface: Star-shaped pattern, close to 187B and 8C; venation, close to N186B; color does not change with subsequent development. Flower throat: Close to N186A; venation, close to N186A. Flower tube: Close to N79B; venation, close to N79B.Sepals.—Arrangement: Five sepals fused at the base forming a tubular star-shaped calyx. Length: About 1.3 cm. Diameter: About 3 mm. Shape: Oblong. Apex: Rounded. Base: Decurrent. Margin: Entire. Texture and luster, upper and lower surfaces: Smooth, glabrous; semi-glossy. Color: When opening and fully opened, upper surface: Close to 147A. When opening and fully opened, lower surface: Close to 147B.Peduncles.—Length: About 2.1 cm. Diameter: About 1 mm. Strength: Moderately strong. Texture and luster: Smooth, glabrous; semi-glossy. Color: Close to 146A.Reproductive organs.—Stamens: Quantity per flower: Five. Filament length: About 1.3 cm. Filament color: Close to 157B. Anther length: About 1.9 mm. Anther shape: Ovate. Anther color: Close to 149B. Pollen amount: Abundant. Pollen color: Close to 151D. Pistils: Quantity per flower: One. Pistil length: About 2.4 cm. Style length: About 1.9 cm. Style color: Close to 145C. Stigma diameter: About 1.5 mm. Stigma shape: Rounded. Stigma color: Close to 144A. Ovary color: Close to 145A and N92A. Fruits: Quantity produced per plant: About 44 during the flowering season. Length: About 6.9 mm. Diameter: About 4.7 mm. Texture: Smooth, glabrous. Color: Close to 161B. Seeds: Quantity per flower: About 79. Length: About 0.5 mm. Diameter: About 0.5 mm. Texture: Smooth, glabrous. Color: Close to 200A.Garden performance: Plants of the newPetuniahave been observed to have good garden performance and tolerate wind, rain, temperatures ranging from about 5 C to about 40 C and to be suitable for USDA Hardiness Zone 11.Pathogen & pest resistance: To date, plants of the newPetuniahave not been observed to be resistant to pathogens and pests common toPetuniaplants. | 6,781 |
PP35588 | DETAILED BOTANICAL DESCRIPTION The aforementioned photograph and following observations, measurements and values describe plants grown during the spring and summer in 22-cm containers in a glass-covered greenhouse in Rheinberg, Germany and under cultural practices typical of commercialPetuniaproduction. During the production of the plants, day and night temperatures averaged 18 C and light levels averaged 4,500 lux. Plants were twelve weeks old when the photograph was taken and 25 weeks old when the description was taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, Fifth Edition, except where general tetms of ordinary dictionary significance are used.Botanical classification:PetuniaXhybrida‘Dopetpotpurvei98’.Parentage:Female, or seed, parent.—Proprietary selection ofPetuniaXhybridaidentified as code number TT21-K0851, not patented.Male, or pollen, parent.—Proprietary selection ofPetuniaXhybridaidentified as code number TT19-K0848, not patented.Propagation:Type.—By terminal vegetative cuttings.Time to initiate roots, summer.—About five days at temperatures about 20 C.Time to initiate roots, winter.—About seven days at temperatures about 20 C.Time to produce a rooted young plant, summer.—About three weeks at temperatures about 20 C.Time to produce a rooted young plant, winter.—About four weeks at temperatures about 20 C.Root description.—Fine, fibrous; close to 155B in color, actual color of the roots is dependent on substrate composition, water quality, fertilizers, substrate temperature and age of roots.Rooting habit.—Freely branching; dense.Plant description:Plant and growth habit.—Semi-upright and uniformly mounding plant habit; freely branching habit with about eight primary lateral branches each with about nine secondary branches developing after pinching; vigorous growth habit and moderate growth rate.Plant height, soil level to top of foliar plane.—About 18.1 cm.Plant height, soil level to top of floral plane.—About 19.5 cm.Plant diameter.—About 62 cm.Lateral branch description:Length.—About 31 cm.Diameter.—About 4 mm.Internode length.—About 1.2 cm.Strength.—Moderately strong.Aspect.—Initially upright to somewhat outwardly spreading.Texture and luster.—Pubescent; semi-glossy.Color, developing.—Close to 144A.Color, developed.—Close to 144B.Leaf description:Arrangement.—Before flowering, alternate; after flowering, opposite; simple.Length.—About 4.9 cm.Width.—About 2.5 cm.Shape.—Spatulate.Apex.—Obtuse.Base.—Attenuate.Margin.—Entire.Texture and luster, upper and lower surfaces.—Pubescent; leathery; semi-glossy.Venation pattern.—Pinnate; arcuate.Color.—Developing and fully expanded leaves, upper surface: Close to 137A; venation, close to 144A. Developing and fully expanded leaves, lower surface: Close to 137B; venation, close to 144A.Petioles.—Length: About 3 mm. Diameter: About 2 mm. Strength: Moderately strong; firm. Texture and luster, upper and lower surfaces: Smooth, glabrous; matte. Color, upper surface: Close to 143A. Color, lower surface: Close to 143B.Flower description:Flower type and flowering habit.—Single salverform flowers arising from leaf axils; freely flowering habit with usually about 344 flowers and flower buds developing per plant during the flowering season; flowers face mostly upright to outwardly.Fragrance.—None detected.Natural flowering season.—Plants flower continuously during the spring and summer in Germany; early flowering habit, plants typically beginning flowering about eleven weeks after planting.Flower longevity.—Individual flowers last about two to three days on the plant; flowers persistent.Flower buds.—Length: About 3.2 cm. Diameter: About 4 mm. Shape: Ovoid. Texture and luster: Rippled; semi-glossy. Color: Close to N79A.Flower diameter.—About 5.5 cm by 5.8 cm.Flower depth(height).—About 4.1 cm.Flower throat diameter.—About 1 cm.Flower tube length.—About 2 cm.Flower tube diameter, proximally.—About 5 mm.Corolla.—Arrangement: Five petals fused at the base and opening into a flared trumpet. Petal lobe length (from throat): About 2.7 cm. Petal lobe width: About 2.7 cm. Petal shape: Roughly spatulate. Petal apex: Obtuse. Petal margin: Entire; slightly undulate. Petal texture and luster, upper and lower surfaces: Rippled, glabrous; semi-glossy. Throat texture and luster: Rippled; semi-glossy. Tube texture and luster: Rippled; semi-glossy. Color: Petal lobe, when opening, upper surface: Close to 76D. Petal lobe, when opening, lower surface: Close to NN77A; towards the tube, close to 150B. Petal lobe, fully opened, upper surface: Close to N78C; venation, close to N78A; color does not change with subsequent development. Petal lobe, fully opened, lower surface: Close to N78D; venation, close to N77B; color does not change with subsequent development. Flower throat: Close to 79A; venation, close to N79A. Flower tube: Close to N79B; venation, close to 145A.Sepals.—Arrangement: Five sepals fused at the base forming a tubular star-shaped calyx. Length: About 1.8 cm. Diameter: About 2.9 mm. Shape: Oblong. Apex: Rounded. Base: Decurrent. Margin: Entire. Texture and luster, upper and lower surfaces: Smooth, glabrous; semi-glossy. Color: When opening and fully opened, upper surface: Close to 146A. When opening and fully opened, lower surface: Close to 146B.Peduncles.—Length: About 3.4 cm. Diameter: About 1 mm. Strength: Moderately strong. Texture and luster: Smooth, glabrous; semi-glossy. Color: Close to 143A.Reproductive organs.—Stamens: Quantity per flower: Five. Filament length: About 1.9 cm. Filament color: Close to 156D. Anther length: About 1.9 mm. Anther shape: Ovate. Anther color: Close to 85B. Pollen amount: Abundant. Pollen color: Close to N155A. Pistils: Quantity per flower: One. Pistil length: About 2.2 cm. Style length: About 1.6 cm. Style color: Close to 144C. Stigma diameter: About 1.6 mm. Stigma shape: Rounded. Stigma color: Close to 143B. Ovary color: Close to 144A. Fruits: Quantity produced per plant: About 108 during the flowering season. Length: About 8 mm. Diameter: About 6 mm. Texture: Smooth, glabrous. Color: Close to 161D. Seeds: Quantity per flower: About 190. Length: About 0.3 mm. Diameter: About 0.3 mm. Texture: Smooth, glabrous. Color: Close to 200B.Garden performance: Plants of the newPetuniahave been observed to have good garden performance and tolerate wind, rain, temperatures ranging from about 5 C to about 40 C and to be suitable for USDA Hardiness Zone 11.Pathogen & pest resistance: To date, plants of the newPetuniahave not been observed to be resistant to pathogens and pests common toPetuniaplants. | 6,639 |
PP35589 | DETAILED BOTANICAL DESCRIPTION The aforementioned photographs and following observations and measurements describe plants grown during the summer in 740-ml containers in an acrylic-covered greenhouse in Carlton, Michigan and under cultural practices typical of commercialPetuniaproduction. During the production of the plants, day temperatures ranged from 18C to 32C and night temperatures ranged from 18C to 24C. Plants were pinched two weeks after planting and were five weeks from planting rooted cuttings when the photographs and description were taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, 2015 Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:PetuniaXhybrida‘WNPETMVSS23’.Parentage:Female, or seed, parent.—Proprietary selection ofPetuniaXhybridaidentified as code number PS001*001, not patented.Male, or pollen, parent.—Proprietary selection ofPetuniaXhybridaidentified as code number 17PB276-01, not patented.Propagation:Type.—Terminal vegetative cuttings.Time to initiate roots, summer.—About three to four days at ambient temperatures about 28C.Time to initiate roots, winter.—About five to seven days at ambient temperatures about 20C.Time to produce a rooted plant, summer.—About three or four weeks at ambient temperatures about 28C.Time to produce a rooted plant, winter.—About four to five weeks at ambient temperatures about 20C.Root description.—Fine, fibrous; typically white in color, actual color of the roots is dependent on substrate composition, water quality, fertilizer type and formulation, substrate temperature and physiological age of roots.Rooting habit.—Freely branching; medium density.Plant description:Plant and growth habit.—Upright to outwardly spreading and mounding to eventually trailing and decumbent plant habit; freely branching habit with about eight to twelve primary lateral branches with secondary laterals developing potentially at every node, dense and bushy plant form; pinching enhances development of lateral branches; vigorous growth habit and rapid growth rate.Plant height.—About 13.5 cm.Plant diameter(area of spread).—About 24 cm by 27 cm.Lateral branches.—Length: About 12.5 cm. Diameter: About 1.25 mm to 1.5 mm. Internode length: About 1.3 cm to 1.5 cm. Strength: Strong; flexible, not brittle. Aspect: Initially arching upwardly and eventually trailing. Texture and luster: Densely pubescent; slightly glossy. Color, developing and developed: Close to 144A.Leaf description:Arrangement.—Alternate before flowering; opposite after flowers develop; leaves simple.Length.—About 3.5 cm to 4 cm.Width.—About 1.4 cm to 1.6 cm.Shape.—Elliptic with obovate tendencies.Apex.—Acute.Base.—Cuneate.Margin.—Entire, not undulate.Texture and luster, upper and lower surfaces.—Slightly pubescent, pubescence, minute; slightly glossy.Venation pattern.—Pinnate, arcuate.Color.—Developing leaves, upper surface: Close to between 146A and 147A. Developing leaves, lower surface: Close to 146A to 146B. Fully developed leaves, upper surface: Close to 147A; venation, close to between 146A and 147A. Fully developed leaves, lower surface: Close to 146A; venation, close to 146A to 146B.Petioles.—Length: About 1 cm. Diameter: About 2.5 mm to 3 mm. Strength: Moderately strong, flexible. Texture and luster, upper and lower surfaces: Slightly pubescent; slightly glossy. Color, upper and lower surfaces: Close to 146A.Flower description:Flower type and flowering habit.—Single terminal and axillary salverform flowers; flowers face mostly upward to slightly outwardly; freely flowering habit with about 75 developing flowers and open flowers per plant.Natural flowering season.—Long day responsive; long flowering period, plants flower from early spring until frost in the autumn, flowering continuous during this period; early flowering habit, plants begin flowering about four weeks after planting rooted young plants.Flower longevity on the plant.—Depending on temperature, about one to two weeks; petals not persistent, and sepals, persistent.Fragrance.—None detected.Flower buds, before showing petal color.—Length: About 8 mm. Diameter: About 3 mm. Shape: Oblong, elongate. Texture and luster: Pubescent; slightly glossy. Color, developing sepals: Close to 144A to 144B.Flower diameter.—About 3.3 cm to 3.5 cm.Flower depth(height).—About 3.4 cm.Throat diameter.—About 7 mm.Tube length.—About 2.2 cm.Tube diameter, distally.—About 7.5 mm.Tube diameter, proximally.—About 1 mm to 1.25 mm.Petals.—Quantity and arrangement: Five petals fused in a single salverform in whorl. Petal lobe length (from throat): About 1.6 cm to 1.8 cm. Petal lobe width: About 1.4 cm to 1.6 cm. Petal lobe shape: Roughly spatulate. Petal lobe apex: Acute. Petal lobe margin: Entire; slightly undulate. Petal lobe texture and luster, upper surface: Smooth, glabrous; velvety; slightly glossy; irridescent. Petal lobe texture and luster, lower surface: Smooth, glabrous along the venation; matte to slightly glossy. Throat texture and luster: Smooth, glabrous; moderately glossy. Tube texture and luster: Moderately to densely pubescent; matte to slightly glossy. Color: When opening, upper surface: Close to NN74A. When opening, lower surface: Close to 75A. Fully opened, upper surface: Close to NN74A; primary venation, close to NN78A, and lateral venation, close to NN74A; color becoming closer to N78A with subsequent development. Fully opened, lower surface: Close to 75A variably tinged with close to NN78A; primary venation, close to 148A, and lateral venation, close to 75A variably tinged with close to NN78A; color becoming closer to 77B to 77C with subsequent development. Flower throat (inside): Close to N75A variably tinged with close to NN78A; venation, close to N78A. Flower tube (outside): Close to 77A; venation, close to 148A tinged with close to 77A.Sepals.—Quantity and arrangement: Five sepals fused in a single star-shaped whorl. Calyx length: About 1.3 cm to 1.5 cm. Calyx diameter: About 3 mm to 3.5 mm. Length: About 1.3 cm to 1.5 cm. Width: About 2 mm to 3 mm. Shape: Linear. Apex: Acute. Margin: Entire. Texture and luster, upper surface: Sparsely to moderately pubescent; slightly glossy. Texture and luster, lower surface: Moderately pubescent; slightly glossy. Color: When opening and fully developed, upper surface: Close to between 144A and 146A. When opening and fully developed, lower surface: Close to 144A.Peduncles.—Length: About 1.5 cm to 1.75 cm. Width: About 2 mm. Strength: Moderately strong to strong; wiry and flexible, not brittle. Angle: About 30 to 45 degrees from the stem axis. Texture and luster: Densely pubescent; slightly glossy. Color: Close to 144A.Reproductive organs.—Stamens: Quantity per flower: About five. Filament length: About 1.8 cm. Filament color: Close to 145C to 145D. Anther length: About 1.25 mm. Anther shape: Bi-lobed. Anther color: Close to 94B. Pollen amount: Scarce. Pollen color: Close to 91A. Pistils: Quantity per flower: One. Pistil length: About 1.5 cm. Style length: About 1.4 cm. Style color: Distally, close to 145A, and proximally, close to 145C. Stigma diameter: Less than 1 mm. Stigma shape: Round. Stigma color: Close to 148A. Ovary color: Close to 144A.Seeds and fruits.—To date, seed and fruit development has not been observed on plants of the newPetunia.Pathogen & pest resistance: To date, plants of the newPetuniahave not been noted to be resistant to pathogens or pests common toPetuniaplants.Garden performance: Plants of the newPetuniahave been observed to have excellent garden performance and have been observed to tolerate rain, wind and temperatures ranging from about 1C to about 35C. | 7,727 |
PP35590 | DETAILED BOTANICAL DESCRIPTION The aforementioned photographs and following observations and measurements describe plants grown during the early summer in 24-cm containers in an outdoor nursery in Higashiomi, Shiga, Japan and under conditions and practices which approximate those generally used in commercialXerochrysumproduction. During the production of the plants, day temperatures averaged 23 C and night averaged 13 C. Measurements and numerical values represent averages for typical flowering plants. Plants were four months old when the photographs were taken and five months old when the detailed description was taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, 2015 Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:Xerochrysum bracteatum‘Bonxe 1651’.Parentage:Female, or seed, parent.—Proprietary selection ofXerochrysum bracteatumidentified as code number 14-42, not patented.Male, or pollen, parent.—Proprietary selection ofXerochrysum bracteatumidentified as code number 14-76, not patented.Propagation:Type.—Terminal vegetative cuttings.Time to initiate roots, summer.—About seven days at temperatures about 18 C to 21 C.Time to initiate roots, winter.—About ten days at temperatures about 18 C to 21 C.Time to produce a rooted cutting, summer.—About three weeks at temperatures about 18 C to 21 C.Time to produce a rooted cutting, winter.—About four weeks at temperatures about 18 C to 21 C.Root description.—Fibrous; typically white in color, actual color of the roots is dependent on substrate composition, water quality, fertilizer type and formulation, substrate temperature and physiological age of roots.Rooting habit.—Freely branching; medium density.Plant description:Plant form and growth habit.—Upright, mounding and uniform plant habit with inflorescences held above the foliage on strong peduncles; vigorous growth habit.Plant height.—About 38 cm.Plant diameter or spread.—About 42 cm.Lateral branches.—Quantity per plant: Freely branching habit with about eight lateral branches per plant; pinching enhances lateral branch development. Length: About 17.6 cm. Diameter: About 5 mm. Internode length: About 1.9 cm. Aspect: Mostly upright to somewhat outwardly. Strength: Strong. Texture: Smooth glabrous or sparsely pubescent. Color: Close to 138A.Leaf description.—Arrangement and quantity: Alternate, simple; sessile; about 13 leaves per lateral branch. Length: About 9.5 cm. Width: About 1.8 cm. Shape: Linear. Apex: Acuminate. Base: Attenuate. Margin: Entire; not undulate to slightly undulate. Texture, upper and lower surfaces: Rough, sparsely pubescent. Venation pattern: Pinnate; reticulate. Color: Developing leaves, upper surface: Close to 137A. Developing leaves, lower surface: Close to 137B. Fully expanded leaves, upper surface: Close to NN137A; venation, close to 148B. Fully expanded leaves, lower surface: Close to 137B; venation, close to 138B.Inflorescence description:Appearance.—Terminal double-type inflorescence form with narrowly deltoid to lanceolate involucral bracts; involucral bracts and disc florets developing acropetally on a capitulum; inflorescences positioned above the foliar plane on strong peduncles; inflorescences face mostly upright.Flowering habit.—Freely flowering habit; typically about 29 inflorescences per plant.Fragrance.—None detected.Time to flower.—In Japan, plants begin to flower about 21 weeks after planting and in the garden, plants flower continuously from the spring through the autumn.Post-production longevity.—Inflorescences maintain good substance for about seven to ten days on the plant; inflorescences persistent.Inflorescence buds.—Height: About 1.9 cm. Diameter: About 1.5 cm. Shape: Ovoid with acute apex. Color: Distally, close to 63A and proximally, close to 158B.Inflorescence size.—Diameter: About 7.8 cm. Depth (height): About 3.2 cm. Disc diameter: About 2.9 cm. Disc height: About 1.4 cm.Receptacles.—Diameter: About 3.1 cm. Height: About 7.7 mm. Color: Close to 149D.Involucral bracts.—Quantity per inflorescence and arrangement: About 435 arranged in numerous whorls; bracts imbricate. Length: About 1.9 cm. Width: About 6 mm. Shape: Narrowly deltoid to lanceolate. Apex: Acuminate. Base: Truncate. Margin: Entire. Texture, upper and lower surfaces: Smooth, glabrous; papery. Orientation: Initially upright becoming horizontal with development. Color: When opening and fully opened, upper surface: Proximally, close to 13A, and proximally, close to N25A. When opening and fully opened, lower surface: Proximally, close to 14B, and proximally, close to 28B.Disc florets.—Quantity per inflorescence and arrangement: Numerous disc florets are spirally arranged in the center of the receptacle. Length: About 1.1 cm. Diameter, distally: About 1.8 mm. Diameter, proximally: About 1 mm. Shape: Tubular; apex dentate, five-pointed. Texture, inner and outer surfaces: Smooth, glabrous. Color: When developing, inner and outer surfaces: Close to 16B. Fully developed, inner and outer surfaces: Towards the apex, close to 24A and 25A; mid-section, close to 145B; towards the base, close to 4D. Pappus: Close to NN155B.Peduncles.—Length: About 6 cm. Diameter: About 4.4 mm. Strength: Strong. Aspect: Mostly upright to somewhat outwardly. Texture: Pubescent. Color: Close to 138B.Reproductive organs.—Androecium: Quantity per disc floret: About five. Filament length: About 2.5 mm. Filament color: Close to 183D and 157D. Anther size: About 1 mm by 2 mm. Anther shape: Linear. Anther color: Close to 17B. Pollen amount: None observed. Gynoecium: Quantity per disc floret: One. Pistil length: About 6.7 mm. Stigma shape: Bi-parted. Stigma color: Close to 17A. Style color: Close to 17A; towards the base, close to 157D. Seeds and fruits: To date, seed and fruit production has not been observed on plants of the newXerochrysum.Pathogen & pest resistance: To date, plants of the newXerochrysumhave not been shown to be resistant to pathogens and pests common toXerochrysumplants.Temperature tolerance: Plants of the newXerochrysumhave been observed to tolerate temperatures ranging from about 0 C to about 35 C. | 6,221 |
PP35591 | The colors in the photographs are as close as possible with the photographic and printing technology utilized and color values cited in the detailed botanical description accurately describe the colors of the newAgapanthus. DETAILED BOTANICAL DESCRIPTION The following is a detailed description of 2-year-old plants of ‘DWAgHyb02’ as grown outdoors in 17-cm containers in Beaulieu, The United Kingdom. The phenotype of the new cultivar may vary with variations in environmental, climatic, and cultural conditions, as it has not been tested under all possible environmental conditions. The color determinations are in accordance with The 2015 Colour Chart of The Royal Horticultural Society, London, England, except where general color terms of ordinary dictionary significance are used.General description:Blooming period.—Main bloom early to mid-summer in South Africa, sporadically re-blooming the rest of the year.Plant type.—Herbaceous perennial, evergreen in South Africa however, it is most likely to be semi-evergreen in colder climates (has not been tested).Plant habit.—Compact, basal rosettes with inflorescences emerging from the rosette center.Height and spread.—65 cm in height, 60 cm in width as a 2-year-old plant.Cold hardiness.—At least to U.S.D.A. Zone 8.Diseases and pests.—Good resistance has been observed to crown rot caused byFusariumsp. and root rot caused byErwiniasp., no resistance or susceptibility to pests has been observed.Root description.—Thick and fleshy, 161C in color.Propagation.—Tissue culture (preferred) and division.Growth rate.—Vigorous.Number of shoots(rosettes).—An average of 4 as grown in a 17-cm container.Foliage description:Leaf shape.—Ligulate.Leaf division.—Simple.Leaf base.—Truncate.Leaf arrangement.—2-ranked, arranged in shoots an average of 3.5 cm diameter at base.Leaf apex.—Narrow acute.Leaf aspect.—Emerging leaves erect, then cascade.Leaf venation.—Parallel, upper surface; 144A and 144B, lower surface; 137A.Leaf margins.—Entire.Leaf size.—Up to 41 cm in length and up to 2.9 cm in width.Leaf surface.—Smooth, glabrous, and dull on upper and lower surface.Leaf number.—Average of 8 leaves per rosette.Foliage density.—Sparse to medium.Leaf color.—Young leaves upper surface; 144B, base and center more towards the top 138A, young leaves lower surface; 144B, mature leaves upper surface; 137A and 137B (no anthocyanin present), mature leaves lower surface; 137B, base anthocyanin present N92A and 86A in color.Leaf attachment.—Sessile to base.Flower description:Inflorescence type.—Dense umbel.Flower fragrance.—None.Flower type.—Rotate, campanulate, base of tepals fused.Flower number.—An average of 50 to 60 flowers per umbel.Inflorescence size.—Average of 10 cm in height, 13 cm in diameter.Flower size.—An average of 4 cm in depth and diameter.Lastingness of inflorescence.—Average 7 days.Flower aspect.—Upward to downward.Peduncle.—Very strong, oval in shape, held primarily upright, average of 56 cm in length and 1.5 cm in width, glabrous and slightly glaucous surface, satiny, color; young 144B, mature 137A to 137B, no anthocyanin present.Pedicels.—Very strong, oval in shape, aspect held erect to outward, average of 4.1 cm in length and 1.2 cm in width, glabrous surface, color; 144C.Flower buds.—Obelliptic in shape, average of 4 cm in length and 2.5 cm in width, 79A in color, ovate to lanceolate in shape, acuminate apex, truncate base, up to 4.5 cm in length and 3.5 cm in width, bracts; up to 4.5 cm in length and 3.5 cm in width, color; 144C, base 144B, surface glabrous and dull.Tepals(perianth).—6, oblanceolate in shape, lower 25% fused, entire to slightly undulate margins, apex is rounded to acute, glabrous and satiny on inner and outer surfaces, thick substance, an average of 4.1 cm in length and 1.2 cm in width, color; upper surface; 79B to 79C, lower surface 79B to 79C with 79A in the center.Bracts.—Present on one side, ovate to lanceolate in shape, acuminate apex, truncate base, glabrous and matte surface, up to 4.5 cm in length and 3.5 cm in width, color; 144C, veins N77B, base 144B.Reproductive organs:Gynoecium.—1 pistil, average of 2.3 cm in length, stigma is narrow clavate in shape and 79B in color, style is 2.1 cm in length, color; 79B, base 79C, ovary is oblong in shape, 8 mm in length, 4 mm in width and 145C in color, pistillodes not present.Androecium.—6 stamens, anthers are dorsifixed, extrusion absent to weak, obcordate in shape, average of 2.2 cm in length, and 202A in color, filament is 2.5 cm in length, N155A at base, middle and top 79C to 79D, pollen is abundant and 135B in color, staminodes not present.Fruit/seed.—Have not been observed to date. | 4,667 |
PP35592 | DETAILED BOTANICAL DESCRIPTION The aforementioned photographs and following observations and measurements describe plants grown during the summer in 740-ml containers in an acrylic-covered greenhouse in Carlton, Michigan and under cultural practices typical of commercialLobeliaproduction. During the production of the plants, day temperatures ranged from 18 C to 32 C and night temperatures ranged from 18 C to 24 C. Plants were ten weeks from planting rooted cuttings when the photographs and description were taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, 2015 Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:Lobelia erinus‘WNLOBLSB23’.Parentage:Female, or seed, parent.—Proprietary selection ofLobelia erinusidentified as code number LOB-0009, not patented.Male, or pollen, parent.—Lobelia erinus‘KLELE11769’, disclosed in U.S. Plant Pat. No. 24,037.Propagation:Type cutting.—Vegetative terminal cuttings.Time to initiate roots, summer.—About seven to twelve days at ambient temperatures about 28 C.Time to initiate roots, winter.—About 10 to 14 days at ambient temperatures about 20 C.Time to produce a rooted young plant, summer.—About three to four weeks at ambient temperatures about 28 C.Time to produce a rooted young plant, winter.—About four to five weeks at ambient temperatures about 20 C.Root description.—Fine, fibrous; typically white in color, actual color of the roots is dependent on substrate composition, water quality, fertilizer type and formulation, substrate temperature and physiological age of roots.Rooting habit.—Freely branching; medium density.Plant description:Plant and growth habit.—Compact, upright to outwardly spreading and mounding to trailing plant habit; freely branching habit with lateral branches developing at potentially every node; dense and bushy plant habit; vigorous and sturdy growth habit and rapid growth rate.Plant height.—About 13 cm.Plant width.—About 38 cm.Lateral branch description.—Length: About 22 cm. Diameter: About 2 mm. Internode length: About 2.5 cm. Strength: Strong, flexible. Aspect: Upright to outwardly spreading to trailing. Texture and luster: Smooth, glabrous; somewhat glossy. Color: Close to 146A.Leaf description:Arrangement.—Alternate, simple.Length.—About 4.75 cm.Width.—About 1.3 cm.Shape.—Oblong; slightly recurved and twisting with development.Apex.—Acute.Base.—Cuneate.Margin.—Dentate with widely-spaced “teeth”; not undulate.Texture and luster, upper and lower surfaces.—Smooth, glabrous; somewhat glossy.Venation pattern.—Pinnate.Color.—Developing leaves, upper surface: More green than 146A. Developing leaves, lower surface: Close to 146A. Fully expanded leaves, upper surface: Close to between 146A and 147A; venation, close to between 146A and 147A. Fully expanded leaves, lower surface: Close to 146A to 146B; venation, close to 146A to 146B.Petioles.—Length: About 5 mm. Diameter: About 3 mm. Texture and luster: Smooth, glabrous; somewhat glossy. Color, upper surface: Close to 146A. Color, lower surface: Close to 146A to 146B.Flower description:Flower arrangement, habit and shape.—Single, flowers axillary or terminal; flowers face mostly outwardly; freely flowering habit with flowers potentially developing at every axil; flowers bilabiate with two upper petals and three larger fused lower petals.Fragrance.—None detected.Natural flowering season.—Long flowering period, in Michigan, plants of the newLobeliaflower continuously from planting in the spring until frost in the autumn; early flowering habit, plants begin flowering about seven weeks after planting.Flower longevity on the plant.—Longevity of individual flowers is highly dependent on temperature, flowers typically last about one to two weeks on the plant; flowers persistent.Flower diameter.—About 1.5 cm by 1.75 cm.Flower depth.—About 1.5 cm.Flower throat diameter.—About 4 mm.Flower tube length.—About 9 mm to 10 mm.Flower tube diameter, distally.—About 4 mm.Flower tube diameter, proximally.—About 2 mm.Flower buds.—Length: About 7 mm. Diameter: About 3 mm. Shape: Oblong. Color, developing sepals: Close to 144B to 144C.Petals.—Arrangement: Single whorl of five petals fused towards the base; two upper petals and three larger fused lower petals. Upper petals: Lobe length, beyond throat: About 7 mm. Lobe width, beyond throat: About 2.5 mm. Shape: Oblanceolate. Apex: Cuspidate to mucronate. Margin: Entire; not undulate. Texture and luster, upper and lower surfaces: Smooth, glabrous; matte. Color, when opening, upper surface: Close to 97A; venation, close to 97A. Color, when opening, lower surface: Close to 97B; venation, close to 97B. Color, fully opened, upper surface: Close to between 91A and 92B; venation, close to between 91A and 92B; color becoming closer to between 91B and 92C with subsequent development. Color, fully opened, lower surface: Close to between 91C and 92C; venation, close to between 91C and 92C; color becoming closer to between 91D and 92D with subsequent development. Lower petals: Lobe length, beyond throat: About 1 cm. Lobe width, beyond throat: About 6.5 mm. Shape: Obovate. Apex: Rounded to acute to slightly cuspidate. Margin: Entire; not undulate. Texture and luster, upper and lower surfaces: Smooth, glabrous; matte. Color, when opening, upper surface: Close to 97A; venation, close to 97A. Color, when opening, lower surface: Close to 97B; venation, close to 97B. Color, fully opened, upper surface: Close to between 91A and 92B; towards the throat, close to NN155D with nectar guides, close to N144A; venation, close to between 91A and 92B; color becoming closer to between 91D and 92D with subsequent development. Color, fully opened, lower surface: Close to between 91B and 92B; venation, close to between 91B and 92B; color becoming closer to between 91C and 92C with subsequent development. Color, throat: Close to 97D; spots, close to 93B. Color, tube: Close to between 91A and 92A.Sepals.—Arrangement: Single whorl of five sepals, fused at the base; star-shaped calyx. Length: About 7.5 mm. Width: About 1 mm. Shape: Acicular. Apex: Acute. Margin: Entire; not undulate. Texture and luster, upper and lower surfaces: Smooth, glabrous; slightly glossy. Color, upper and lower surfaces: Close to 146A.Peduncles.—Length: About 2.5 cm. Diameter: Less than 1 mm. Strength: Strong, flexible; wiry. Aspect: About 45 degrees from lateral branch axis. Texture and luster: Smooth, glabrous; somewhat glossy. Color: Close to between 146A and 147A.Reproductive organs.—Stamens: To date, stamen development has not been observed on plants of the newLobelia. Pistils: Quantity per flower: One. Pistil length: About 7.5 mm. Stigma shape: Globose. Stigma color: Close to N187A. Style color: Close to 144D. Ovary color: Close to 144A to 144B.Fruits and seeds.—To date, fruit and seed development have not been observed on plants of the newLobelia.Pathogen & pest resistance: To date, plants of the newLobeliahave not been noted to be resistant to pathogens and pests common toLobeliaplants.Garden performance: Plants of the newLobeliahave been observed to have good garden performance and to tolerate wind, rain and to be relatively tolerant to high temperature conditions. | 7,297 |
PP35593 | DETAILED BOTANICAL DESCRIPTION The aforementioned photographs and following observations and measurements describe plants grown during the summer in 740-ml containers in an acrylic-covered greenhouse in Carlton, Michigan and under cultural practices typical of commercialPortulacaproduction. During the production of the plants, day temperatures ranged from 18 C to 32 C and night temperatures ranged from 18 C to 24 C. Plants were pinched one time seven weeks after planting rooted young plants; and plants were ten weeks from planting rooted cuttings when the photographs and description were taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, 2015 Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:Portulaca oleraceaXPortulaca umbracticola‘WNPORMYEL23’.Parentage:Female, or seed, parent.—Portulaca oleracea‘SAKPOR012’, disclosed in U.S. Plant Pat. No. 28,579.Male or pollen parent.—Portulaca umbracticola‘Mojave Yellow’, not patented.Propagation:Type.—By vegetative terminal cuttings.Time to initiate roots, summer.—About three to four days at ambient temperatures about 28 C.Time to initiate roots, winter.—About five to seven days at ambient temperatures about 20 C.Time to produce a rooted young plant, summer.—About three to four weeks at ambient temperatures about 28 C.Time to produce a rooted young plant, winter.—About four to five weeks at ambient temperatures about 20 C.Root description.—Fine, fleshy; typically white in color, actual color of the roots is dependent on substrate composition, water quality, fertilizers, substrate temperature and age of roots.Rooting habit.—Freely branching; medium density.Plant description:Plant and growth habit.—Outwardly spreading to mounding and decumbent plant habit; vigorous growth habit and rapid growth rate.Branching habit.—Freely branching habit about six to ten primary lateral branches per plant each with secondary lateral branches developing potentially at every node; pinching enhances branching potential.Plant height.—About 5 cm.Plant diameter(area of spread).—About 42 cm by 43 cm.Lateral branch/peduncle description:Length.—About 26 cm.Diameter.—About 4 mm.Internode length.—Variable, about 1.5 cm.Strength.—Moderately strong; very flexible.Texture and luster.—Smooth, glabrous; moderately glossy.Color, developing.—Close to 144A.Color, developed.—Close to 144A, variably overlain with close to 58A.Leaf description:Arrangement.—Opposite, simple.Length.—About 2.4 cm.Width.—About 1.2 cm.Shape.—Obovate.Apex.—Rounded, obtuse.Base.—Cuneate.Margin.—Entire.Texture and luster, upper and lower surfaces.—Smooth, glabrous; fleshy, succulent; moderately glossy; irridescent.Venation pattern.—Pinnate.Color.—Developing leaves, upper surface: Close to 146A to slightly darker green than 146A. Developing leaves, lower surface: Close to 146B to slightly darker green than 146B. Fully expanded leaves, upper surface: Darker green than 146A; venation, close to 146A. Fully expanded leaves, lower surface: Slightly darker green than 146B; venation, slightly darker green than 146B.Petioles.—Length: About 2 mm. Diameter: About 1.5 mm. Texture and luster, upper and lower surfaces: Smooth, glabrous; semi-glossy. Strength: Moderately strong. Color, upper and lower surfaces: Close to 144A.Flower description:Flower arrangement.—Single rotate and cupped flowers; freely flowering habit with three to five flowers per terminal; numerous flowers developing per plant during the flowering season; flowers face mostly upright to slightly outwardly.Fragrance.—None detected.Natural flowering season.—Plants begin flowering about seven weeks after planting; in the garden, plants flower continuously from spring until autumn in Michigan.Flower longevity.—Flowers last about one day on the plant; flowers not persistent.Flower buds.—Length: About 8.5 mm. Diameter: About 4 mm. Shape: Ovoid. Texture and luster: Smooth, glabrous; somewhat glossy. Color, developing sepals: Close to 144A.Flower diameter.—About 3.6 cm.Flower length(height).—About 1 cm.Petals.—Quantity per flower: Corolla consists of five petals fused at the base. Length: About 1.7 cm. Width: About 1.3 cm. Shape: Obcordate. Apex: Emarginate. Base: Fused, truncate. Margin: Entire, slightly undulate. Texture and luster, upper surface: Smooth, glabrous, satiny; glossy. Texture and luster, lower surface: Smooth, glabrous; moderately glossy. Color: When opening and fully opened, upper surface: Close to 13A, iridescent; venation, close to 13A; color does not change with subsequent development. When opening and fully opened, lower surface: Close to 11A; venation, close to 11A; color does not change with subsequent development.Sepals.—Quantity per flower: Two fused into a tubular calyx. Length: About 8 mm. Width: About 4 mm. Shape: Broadly ovate. Apex: Acute. Margin: Entire. Texture and luster, upper and lower surfaces: Smooth, glabrous; somewhat glossy. Color, upper surface: Close to 154C, translucent. Color, lower surface: Close to 144A, translucent.Reproductive organs.—Androecium: Quantity of stamens per flower: About 56. Filament length: About 4 mm. Filament color: Close to 9A. Anther shape: Oblong. Anther length: Less than 1 mm. Anther color: Close to 17A. Amount of pollen: Abundant. Pollen color: Close to 17A. Gynoecium: Pistil length: About 7 mm. Style length: About 5 mm. Style color: Close to 9A. Stigma diameter: About 4.5 mm. Stigma color: Close to 9A. Ovary color: Close to 154D. Fruits and seeds: To date, fruit and seed development have not been observed on plants of the newPortulaca.Garden performance: Plants of the newPortulacahave been observed to have excellent garden performance and to tolerate temperatures ranging from about 2 C to about 35 C.Pathogen & pest resistance: To date, plants of the newPortulacahave not been shown to be resistant to pathogens and pests common toPortulacaplants. | 5,961 |
PP35594 | DETAILED BOTANICAL DESCRIPTION ‘CIVH725’ has not been observed under all possible environmental conditions. The characteristics of the new variety may vary in detail, depending upon variations in environmental factors, including weather (temperature, humidity and light intensity), day length, soil type and location. The aforementioned photographs, together with the following observations, measurements and values describe the new strawberry variety ‘CIVH725’, unless otherwise noted, taken during 2022 growing season in San Giuseppe di Comacchio, Ferrara, Italy. The observations, measurements and values were taken from plants of ‘CIVH725’ dug in December 2020 from CIV' nursery located in 44021 Codigoro, Ferrara, (locality Pomposa), Italy, and planted in July 2021 in CIV' test field in San Giuseppe di Comacchio, Ferrara, Italy. Plants of the new strawberry variety ‘CIVH725’ were grown under conditions which closely approximate those generally used in commercial practice. The observed plants were one year old plants. The plants used in the production field are produced in a nursery in CIV' nursery located in 44021 Codigoro, Ferrara, (locality Pomposa), Italy. Yield observations and fruit quality characteristics are averaged from 3 year of data collected from the 2020 through 2022 growing seasons. Flower measurements and characteristics are from secondary flowers unless otherwise noted. Fruit characteristics and measurements are from secondary fruit unless otherwise noted. Color references are made to The Royal Horticultural Society Colour Chart (R.H.S.), except where general colors of ordinary significance are used. Color values were taken under daylight conditions approximately in the afternoon in San Giuseppe di Comacchio, Ferrara, Italy. The approximate age of the observed plants is about 12 months. The following tables 3-9 describe fruit, plant, stolon, foliage, fruiting truss, flower and pest/disease characteristics of the new strawberry ‘CIVH725’. TABLE 3FRUIT CHARACTERISTICSCharacteristic‘CIVH725’Color of mature fruitRed group - RHS 46BColor of internal fleshRed group - RHS 45CColor of internal coreRed group - RHS 43BLength (cm)About 4.75 cmWidth (cm)About 3.1 cmRatio length/widthModerately longerCalyx diameter (cm)About 5.3 cmAverage weight (gm)About 30.5 gAchene colorYellow-green group 153BNumber of achenesAbout 9per cm2measured at the centerof berryAverage weight ofAbout 0.80 g1000 achenes (g)Marketable yieldAverage 1.100 gm/plt(gm/plt)SizeLargePredominant shapeConicalDifference in shapesSlightbetween primary andsecondary fruitBand without achenesNarrowUnevenness of surfaceEven or slightly unevenEvenness of colorEven or slightly unevenGlossinessStrongInsertion of achenesLevel with surfaceInsertion of calyxLevel with fruitAttitude of the calyxOutwardSize of calyx in relationLargerto fruit diameterAdherence of calyxStrongFirmness of skinVery firmFirmness of fleshFirmDistribution of redUniformcolor of the fleshHollow centerMediumexpressionFlavorVery good flavour, sweet and slightlyaromaticSoluble solids (% brix)About 8.6%Time of first andEarly. The full bloom of first flowering issecond Floweringat the end of March, and the secondflowering is after about 30/40 days from thefirst flowering in North Italy - Po Valley.Time of first harvestingEarlyHarvest periodThe first harvest period is from the begin-ning of May to the end of May, and the secondharvest period is from the beginning of Juneto the end of June in North Itality - Po Valley.Type of bearingNot remontant TABLE 4PLANT CHARACTERISTICSCharacteristic‘CIVH725’Height (cm)About 27.5 cmSpread (cm)About 35 cmSizeSmall to mediumHabitSemi-uprightDensityMediumVigorMedium to strong TABLE 5STOLON CHARACTERISTICSCharacteristic‘CIVH725’Average number per plantAbout nr. 10-15Anthocyanin colorationRed group - 53BAnthocyanin intensityMediumDiameter at bract (mm)About 3mmPubescenceMediumLengthAbout 50 cm TABLE 6FOLIAGE CHARACTERISTICSCharacteristic‘CIVH725’Foliage:Color of upper surfaceGreen group - 137AColor of undersideGreen group - 147BShape in cross sectionConcaveInterveinal blisteringAbsent or weakGlossinessMediumNumber of leaflets3Terminal Leaflet:Length (cm)About 10.5 cmWidth (cm)About 8.1 cmLength/width ratioLongerSerrations/leafOverlappingSizeMediumShape of baseObtuseShape of teethSerratePetiole:Length (cm)About 25.5 cmDiameter (mm)About 0.5 cmPubescenceStrongAttitude of hairsOutwardsStipule:Length (mm)About 4.2 cmWidth (mm)About 1 cmAnthocyanin colorationStrongColorYellow-green group 145C TABLE 7FRUITING TRUSS CHARACTERISTICSCharacteristic‘CIVH725’Length (cm)About 20-25 cmAttitudeErectPosition relative to foliageSlightly belowPubescenceWeak to mediumAnthocyanin intensityAbsent or very weakAttitude at first pickHorizontalNumber of fruit per trussAbout from 4 to 6 TABLE 8FLOWER CHARACTERISTICSCharacteristic‘CIVH725’Petal colorMature (upper)White group - 155DMature (lower)White group - 155DPetal shapeOverallRoundedApexRoundedBaseBroadPetal length (mm)About 1 to 1.2 cmPetal width (mm)About 0.9 to 1.1 cmPetal length/width ratioSlightly longerNumber of petals/flowerAbout 5 to 6Sepals colorMature (upper)Green group - 137AMature (lower)Green group - 138ASepal shapeOverallEllipticApexPointedBaseFlatSepal length (mm)About 0.9 to 1.1 cmSepal width (mm)About 0.3 to 0.5 cmSepal length/width ratioLongerNumber of sepals/flowerAbout 9 to 13Corolla diameter (mm)About 28 mmCalyx diameter (mm)About 31 mmSize of calyx relative toLargercorollaSize of inner calyxSmallerrelative to outer calyxRelative position of petalsFree to touchingUse: Fresh market.Shipping/storage characteristics:Very good storabilityand good shelf life. TABLE 9REPRODUCTIVE ORGANSCharacteristic‘CIVH725’Receptacle colorYellow green group - 154BPollen colorYellow orange group - 14AStamenNumerous with pollen present, fertile andabundant.Stamen lengthAbout 2.4 mmStamen colorYellow-green group - 145CPollen amountFertile and abundant. Yellow-orange group - 14AAnthers lengthAbout 1.2 mmAnthers widthAbout 0.8 mmAnthers colorYellow-orange group - 17C and darkening withadvanced maturity.PistilsNumerous, generally average in size. TABLE 10PEST AND DISEASE REACTIONSCharacteristic‘CIVH725’Powdery mildew (Sphaerotheca macularis)TollerantAngular leaf spot (Xanthomonas fragariae)Moderately susceptibleBotrytis fruit rot (Botrytis cinerea)Very low sensibilityFusarium wilt (Fusarium oxysporum)Moderately susceptibleAnthracnose crown rot (ColletotrichumModerately susceptiblefragariae)Two-spotted spider mite (Tetranychus urticae)Susceptible | 6,556 |
PP35595 | DETAILED BOTANICAL DESCRIPTION In the following description, color references are made to The Royal Horticultural Society Colour Chart 2007, except where general terms of ordinary dictionary significance are used. The following observations and measurements describe ‘COUHAMINT’ plants grown in a ploy-greenhouse in Vosges, France. The plants were about 2 to 3 years old. Temperatures ranged from 5° C. to 10° C. at night to 18° C. to 27° C. during the day. No artificial light, photoperiodic treatments were given to the plants. Measurements and numerical values represent averages of typical plant types.Botanical classification:Hydrangeaxpaniculata‘COUHAMINT’. PROPAGATION Typical method: Softwood cuttings.Root initiation: 20 days at 20° C. during summer.Time to produce rooted cutting: About 2 months at 20° C. during summer.Roots: Dense, freely branching, fibrous, thick to thin. Creamy white to brown in color, not accurately measured with RHS chart. PLANT Growth habit: Upright, v-shaped, compact.Height: 70 to 80 cm.Plant spread: 60 cm.Pot size of plant described: 2 gallon container.Age of plant described: Approximately 2 years.Growth rate: Good.Plant vigor: Moderately vigorous.Stem:Branching.—Basal.Number of lateral branches.—10.Shape.—Rounded.Color.—Immature: RHS Yellow-Green 145A. Mature: RHS Brown 200D with Grey-Brown 199D lenticels.Length.—60 cm.Width.—6 mm.Aspect.—70 to 80°.Strength.—Strong with some flexibility.Pubescence.—None.Internode length.—5 cm to 10 cm. FOLIAGE Leaf:Arrangement.—Whorl (3 leaves equally spaced around each node).Shape.—Broad elliptic to somewhat rounded deltate.Length.—12 to 14 cm.Width.—5.5 to 6.5 cm.Apex.—Acute.Base.—Obtuse.Margin.—Serrulate.Texture of top surface.—Roughly textured with coarse, bristly hairs.Texture of bottom surface.—Roughly textured with coarse, bristly hairs and pronounced venation.Pubescence.—Yes, both sides.Color.—Young foliage upper side: RHS Green 143A. Young foliage under side: RHS Green 143C. Mature foliage upper side: RHS Green 141A Mature foliage, under side: RHS Green 137A.Venation:Type.—Pinnate.Color.—Upper side: RHS Green 143C. Under side: Green 143D.Petiole:Length.—4 cm.Width.—4 mm.Color.—RHS Green 143D.Texture.—Lightly pubescent. INFLORESCENCE Natural flowering season: Summer.Inflorescence type: Mophead.Panicle:Shape.—Globular.Height.—15 to 20 cm.Diameter.—15 to 22 cm.Fragrance: Faintly sweet.Sterile flowers:Flowers per inflorescence.—250 to 350.Aspect.—Outward.Shape.—Cruciform/stellate.Length.—2 cm.Diameter.—2.6 cm.Persistent or self-cleaning.—Persistent.Bud:Length.—3 mm.Diameter.—3 mm.Shape.—Obovate.Color.—RHS Green 143C.Petals:Number per flower.—3 to 4.Shape.—Elliptic.Tip.—Acute.Base.—Truncate.Margin.—Entire.Length.—3 mm.Width.—2 mm.Texture.—Upper side: Smooth. Under side: Smooth.Color.—When Opening, Upper side: RHS Yellow-Green 150A. When Opening, Under side: RHS Yellow-Green 150A. Fully Opened, Upper side: RHS Green-White 157A flushed Green 143A. Fully Opened, Under side: RHS Green-White 157A flushed Green 143A.Sepal:Number per flower.—4.Shape.—Ovate.Tip.—Broad rounded.Base.—Truncate.Margin.—Entire.Length.—1.5 cm.Width.—8 mm.Texture.—Upper side: Smooth. Under side: Smooth.Color.—Earliest Stage, Upper side: RHS Yellow-Green 150A. Earliest Stage, Under side: RHS Yellow-Green 150A. Semi-mature, Upper side: RHS Green-White 157A flushed Green 143A. Semi-mature, Under side: RHS Green-White 157A flushed Green 143A. Mature, Upper side: RHS White 155B tinged Yellow 4C. Mature, Under side: RHS White 155B tinged Yellow 4C. Mature before senescence Upper side: RHS Green-White 157A. Mature before senescence, Under side: RHS Green-White 157A.Pedicel:Length.—1. cm.Diameter.—2 mm.Angle.—45°.Strength.—Good, flexible.Texture.—Lightly pubescent.Color.—RHS Green-White 157A.Fertile flowers: Absent or highly reduced and inconspicuous. REPRODUCTIVE ORGANS Sterile flower:Stamens:Number.—About 8.Filament color.—RHS Green-White 157A.Filament length.—2 mm.Anthers:Length.—1 mm.Shape.—Rounded.Color.—RHS Green-White 157A.Pollen.—Scant.Pollen color.—RHS Yellow-White 158C.Pistil:Number.—1.Length.—1 mm.Stigma:Shape.—Bi-lobed.Color.—RHS Green-White 157A.Style length.—0.5 mm.Style color.—RHS Green-White 157A. OTHER CHARACTERISTICS Disease resistance: Neither resistance nor susceptibility to the normal diseases and pests ofHydrangeahas been observed.Drought tolerance and cold tolerance: The new cultivar can tolerate cold temperatures to approximately −31° C. and tolerates an upper temperature range to at least 38° C.Fruit/seed production: Not observed to date. | 4,583 |
PP35596 | DETAILED BOTANICAL DESCRIPTION The aforementioned photograph and following observations, measurements and values describe plants grown during the spring and summer in 22-cm containers in a glass-covered greenhouse in Rheinberg, Germany and under cultural practices typical of commercialPetuniaproduction. During the production of the plants, day and night temperatures averaged 18 C and light levels averaged 4,500 lux. Plants were twelve weeks old when the photograph was taken and 25 weeks old when the description was taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, Fifth Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:PetuniaXhybrida‘Dopetpotplure93’.Parentage:Female, or seed, parent.—Proprietary selection ofPetuniaXhybridaidentified as code number TT19-K0791, not patented.Male, or pollen, parent.—Proprietary selection ofPetuniaXhybridaidentified as code number TT19-K0110, not patented.Propagation:Type.—By terminal vegetative cuttings.Time to initiate roots, summer.—About five days at temperatures about 20 C.Time to initiate roots, winter.—About seven days at temperatures about 20 C.Time to produce a rooted young plant, summer.—About three weeks at temperatures about 20 C.Time to produce a rooted young plant, winter.—About four weeks at temperatures about 20 C.Root description.—Fine, fibrous; close to 155B in color, actual color of the roots is dependent on substrate composition, water quality, fertilizers, substrate temperature and age of roots.Rooting habit.—Freely branching; dense.Plant description:Plant and growth habit.—Semi-upright and uniformly mounding plant habit; freely branching habit with about six to eight primary lateral branches each with about nine secondary branches developing after pinching; vigorous growth habit and moderate growth rate.Plant height, soil level to top of foliar plane.—About 23 cm.Plant height, soil level to top of floral plane.—About 24 cm.Plant diameter.—About 70 cm.Lateral branch description:Length.—About 33 cm.Diameter.—About 6 mm.Internode length.—About 3.6 cm.Strength.—Moderately strong.Aspect.—Initially upright to somewhat outwardly spreading.Texture and luster.—Pubescent; semi-glossy.Color, developing.—Close to 144A.Color, developed.—Close to 144B.Leaf description:Arrangement.—Before flowering, alternate; after flowering, opposite; simple.Length.—About 5.7 cm.Width.—About 3 cm.Shape.—Spatulate.Apex.—Obtuse.Base.—Attenuate.Margin.—Entire.Texture and luster, upper and lower surfaces.—Pubescent; leathery; semi-glossy.Venation pattern.—Pinnate; arcuate.Color.—Developing leaves, upper surface: Close to 143A. Developing leaves, lower surface: Close to 143C. Fully expanded leaves, upper surface: Close to 143B; venation, close to 142B. Fully expanded leaves, lower surface: Close to 143C; venation, close to 142C.Petioles.—Length: About 9 mm. Diameter: About 3 mm. Strength: Moderately strong; firm. Texture and luster, upper and lower surfaces: Smooth, glabrous; matte. Color, upper and lower surfaces: Close to 143C.Flower description:Flower type and flowering habit.—Single salverform flowers arising from leaf axils; freely flowering habit with usually about 240 flowers and flower buds developing per plant during the flowering season; flowers face mostly upright to outwardly.Fragrance.—None detected.Natural flowering season.—Plants flower continuously during the spring and summer in Germany; early flowering habit, plants typically beginning flowering about nine weeks after planting.Flower longevity.—Individual flowers last about two to three days on the plant; flowers persistent.Flower buds.—Length: About 4.1 cm. Diameter: About 6.8 mm. Shape: Ovoid. Texture and luster: Rippled; semi-glossy. Color: Close to 46A.Flower diameter.—About 6.6 cm by 6.9 cm.Flower depth(height).—About 5.4 cm.Flower throat diameter.—About 1.2 cm.Flower tube length.—About 2.5 cm.Flower tube diameter, proximally.—About 5.5 mm.Corolla.—Arrangement: Five petals fused at the base and opening into a flared trumpet. Petal lobe length (from throat): About 3.2 cm. Petal lobe width: About 3.6 cm. Petal shape: Roughly spatulate. Petal apex: Obtuse. Petal margin: Entire; slightly undulate. Petal texture and luster, upper and lower surfaces: Rippled, glabrous; semi-glossy. Throat texture and luster: Rippled; semi-glossy. Tube texture and luster: Rippled; semi-glossy. Color: Petal lobe, when opening, upper surface: Close to 45B. Petal lobe, when opening, lower surface: Close to 45D. Petal lobe, fully opened, upper surface: Close to 45B; venation, close to 53A; color does not change with subsequent development. Petal lobe, fully opened, lower surface: Close to 45D; venation, close to 60A; color does not change with subsequent development. Flower throat: Close to 53A; venation, close to 59A. Flower tube: Close to N57A; venation, close to 60A.Sepals.—Arrangement: Five sepals fused at the base forming a tubular star-shaped calyx. Length: About 2.2 cm. Diameter: About 2 mm. Shape: Oblong. Apex: Rounded. Base: Decurrent. Margin: Entire. Texture and luster, upper and lower surfaces: Smooth, glabrous; semi-glossy. Color: When opening and fully opened, upper surface: Close to 143A. When opening and fully opened, lower surface: Close to 143C.Peduncles.—Length: About 3.1 cm. Diameter: About 1.5 mm. Strength: Moderately strong. Texture and luster: Smooth, glabrous; semi-glossy. Color: Close to 143A.Reproductive organs.—Stamens: Quantity per flower: Five. Filament length: About 2.2 cm. Filament color: Close to 155D. Anther length: About 2 mm. Anther shape: Ovate. Anther color: Close to 155D. Pollen amount: Abundant. Pollen color: Close to 158D. Pistils: Quantity per flower: One. Pistil length: About 2.3 cm. Style length: About 1.8 cm. Style color: Close to 145C. Stigma diameter: About 1.5 mm. Stigma shape: Rounded. Stigma color: Close to 145C. Ovary color: Close to 142A. Fruits: Quantity produced per plant: About twelve during the flowering season. Length: About 6.2 mm. Diameter: About 4.1 mm. Texture: Smooth, glabrous. Color: Close to 162A. Seeds: Quantity per flower: About 92. Length: About 0.5 mm. Diameter: About 0.5 mm. Texture: Smooth, glabrous. Color: Close to 200B.Garden performance: Plants of the newPetuniahave been observed to have good garden performance and tolerate wind, rain, temperatures ranging from about 5 C to about 40 C and to be suitable for USDA Hardiness Zone 11.Pathogen & pest resistance: To date, plants of the newPetuniahave not been observed to be resistant to pathogens and pests common toPetuniaplants. | 6,649 |
PP35597 | The colors in the photographs are as close as possible with the photographic and printing technology utilized and the color values cited in the Detailed Botanical Description accurately describe the colors of the new ornamental grass. DETAILED BOTANICAL DESCRIPTION The following is a detailed description of 5-year-old plants of the new cultivar as field grown in Boskoop, The Netherlands. The phenotype of the new cultivar may vary with variations in environmental, climatic, and cultural conditions, as it has not been tested under all possible environmental conditions. The color determination is in accordance with The 2015 Colour Chart of The Royal Horticultural Society, London, England, except where general color terms of ordinary dictionary significance are used.General description:Plant type.—Herbaceous perennial grass.Plant habit.—Very upright with stems that do not lodge.Height and spread.—Average of 53 m in height and 22 m in spread as a 5-year-old plant in the landscape.Cold hardiness.—At least in U.S.D.A. Zone 6.Diseases and pests.—No susceptibility or resistance to diseases or pests has been observed.Root description.—Fibrous.Root development.—An average of 6 months to produce a young rooted plant from a root cutting.Propagation.—Root cuttings.Growth rate.—Highly vigorous.Stem description:General.—Rounded, strong.Stem aspect.—Growing from the base, held upright, vertically.Stem quantity.—Average of 12 basal shoots and 1 lateral per basal shoot.Stem color.—Young; 145C, mature; 148B, matte down 195A to 195D, internodes 146A and 146B, tinged 153D and 167D, older stems 153D, tinged 167D.Stem size.—An average of 46 m in length (from base of shoots to base of inflorescence), 1.9 cm in diameter.Stem surface.—Both surfaces moderately glossy and covered with a matte down.Foliage description:Leaf shape.—Linear.Leaf division.—Simple.Leaf base.—Sheathed.Leaf apex.—Narrow and long acuminate.Leaf aspect.—Slightly carinate, moderately arching.Leaf venation.—Parallel, main vein furrowed, upper surface color 155C, lower surface color N144A.Leaf margins.—Entire, visibly smooth, when rubbed downwards becoming very sharp.Internode length.—An average of 21.9 cm.Leaf size.—An average of 83.3 cm in length, an average of 3.2 cm in width, sheath; 21.9 cm in length, 2.2 cm in width (folded open).Leaf surface.—Upper and lower surface glabrous and smooth, non-rugose, ligules; moderately pubescent with thin hairs an average of 1.5 mm in length and 156D in color.Leaf number.—An average of 14 per shoot.Leaf arrangement.—Alternate.Leaf color.—Young upper surface; 144A, young lower surface 143A and 144A, mature upper and lower surface NN137C, sheath; inner side 194B, outer side 146B.Flower description: No flowers have been produced to date. | 2,766 |
PP35598 | DETAILED BOTANICAL DESCRIPTION The aforementioned photographs and following observations, measurements and values describe plants grown during the spring and summer in 22-cm containers in a glass-covered greenhouse in Rheinberg, Germany and under cultural practices typical of commercialCalibrachoaproduction. During the production of the plants, day and night temperatures averaged 18C and light levels averaged 4,500 lux. Rooted young plants were pinched one time three weeks after planting. Plants were twelve weeks old when the photographs were taken and 25 weeks old when the description was taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, Fifth Edition, except where general tetms of ordinary dictionary significance are used.Botanical classification:Calibrachoa parviflora‘Docaltiore’.Parentage:Female, or seed, parent.—Proprietary selection ofCalibrachoa parvifloraidentified as code number AA19-K0285, not patented.Male, or pollen, parent.—Proprietary selection ofCalibrachoa parvifloraidentified as code number AA19-K0244, not patented.Propagation:Type.—By vegetative cuttings.Time to initiate roots, summer.—About five days at temperatures about 20C.Time to initiate roots, winter.—About seven days at temperatures about 20C.Time to produce a rooted young plant, summer.—About three weeks at temperatures about 20C.Time to produce a rooted young plant, winter.—About four weeks at temperatures about 20C.Root description.—Fine, fibrous; close to 158A in color, actual color of the roots is dependent on substrate composition, water quality, fertilizers, substrate temperature and age of roots.Rooting habit.—Freely branching; dense.Plant description:Plant and growth habit.—Upright to outwardly spreading to trailing and decumbent plant habit; freely branching habit with about seven primary lateral branches each with about five to seven secondary lateral branches developing per plant; pinching enhances branching; dense and full appearance; moderately vigorous growth habit and moderate growth rate.Plant height, soil level to top of foliar plane.—About 21.2 cm.Plant height, soil level to top of floral plane.—About 21.8 cm.Plant diameter(spread of plant).—About 75 cm.Lateral branch description:Length.—About 35 cm.Diameter.—About 3.5 mm.Internode length.—About 2.3 cm.Strength.—Strong.Aspect.—Initially upright to outwardly spreading to trailing and decumbent.Texture and luster.—Pubescent; glossy.Color, developing.—Close to 144A.Color, at the internodes.—Close to 144A.Color, developed.—Close to 152B.Leaf description:Arrangement.—Before flowering, alternate, and after flowering, opposite; simple.Length.—About 3.3 cm.Width.—About 1.1 cm.Shape.—Oblanceolate.Apex.—Rounded.Base.—Attenuate.Margin.—Entire.Texture and luster, upper and lower surfaces.—Pubescent; matte.Venation pattern.—Pinnate; arcuate.Color.—Developing leaves, upper surface: Close to N137A. Developing leaves, lower surface: Close to N137C. Fully expanded leaves, upper surface: Close to N137A; venation, close to 144A. Fully expanded leaves, lower surface: Close to N137C; venation, close to 144B.Petioles.—Length: About 2.4 mm. Diameter: About 1.3 mm. Strength: Moderately strong. Texture and luster, upper and lower surfaces: Pubescent; matte. Color, upper surface: Close to 138A. Color, lower surface: Close to 138B.Flower description:Flower arrangement and habit.—Single salverform flowers arising from leaf axils; freely flowering habit with usually about 576 flowers and flower buds developing per plant; flowers face mostly upright to somewhat outwardly.Fragrance.—None detected.Natural flowering season.—Early flowering habit, plants of the newCalibrachoainitiate and develop flowers about six weeks after planting; plants flower continuously from the spring throughout the summer in Germany.Flower longevity.—Individual flowers last about seven to ten days on the plant; flowers not persistent.Flower buds.—Length: About 2.4 cm. Diameter: About 4.6 mm. Shape: Elongated oblong. Texture and luster: Rippled; semi-glossy. Color: Immature sepals, close to 137A; immature petals, close to 39C.Flower diameter.—About 3 cm by 3.2 cm.Flower depth(height).—About 2.9 cm.Flower throat diameter.—About 8.4 mm.Flower tube length.—About 1.8 cm.Flower tube diameter.—About 5.2 mm.Corolla.—Arrangement: Five petals fused at the base and opening into a flared trumpet. Petal length from throat: About 1.6 cm. Petal lobe width: About 1.7 cm. Petal shape: Roughly spatulate. Petal apex: Rounded. Petal margin: Entire; slightly undulate. Petal texture and luster, upper and lower surfaces: Smooth, glabrous; matte. Throat texture: Smooth, glabrous. Tube texture: Smooth, glabrous. Color: Petal, when opening, upper surface: Close to 31C; towards the center, close to 46B; star-shaped pattern, close to 5B. Petal, when opening, lower surface: Close to 35C. Petal, fully opened, upper surface: Close to 31B; towards the center, close to 46A; star-shaped pattern, close to 5B; venation, close to 59A; color does not change with subsequent development. Petal, fully opened, lower surface: Close to 35D; venation, close to 59A; color does not change with subsequent development. Throat: Close to 7A; venation, close to 59B. Tube: Close to 154C; venation, close to 59A.Calyx.—Arrangement: Star-shaped calyx with five sepals; sepals fused at the base. Sepal length: About 9.3 mm. Sepal width: About 2.1 mm. Sepal shape: Lanceolate. Sepal apex: Acute. Sepal margin: Entire. Sepal texture and luster, upper and lower surfaces: Pubescent; matte. Color: When developing and fully developed, upper surface: Close to 137A. When developing and fully developed, lower surface: Close to 137B.Peduncles.—Length: About 1.2 cm. Diameter: About 0.8 mm. Angle: About 45 degrees from stem axis. Strength: Moderately strong. Texture and luster: Pubescent; matte. Color: Close to 144B.Reproductive organs.—Stamens: Quantity: Five per flower. Filament length: About 1 cm. Filament color: Close to 151D. Anther length: About 1.1 mm. Anther shape: Ellipsoidal. Anther color: Close to 10B. Pollen amount: Scarce. Pollen color: Close to 13A. Pistils: Quantity: One per flower. Pistil length: About 1.1 cm. Style length: About 8.1 mm. Style color: Close to N144D. Stigma diameter: About 0.8 mm. Stigma shape: Ellipsoidal. Stigma color: Close to 143B. Ovary color: Close to 145A. Fruits: Quantity produced per plant: About 448 per plant. Length: About 5.9 mm. Diameter: About 5.2 mm. Texture: Smooth, glabrous. Color: Close to N199C. Seeds: Quantity per flower: About 61. Length: About 1 mm. Diameter: About 0.9 mm. Texture: Smooth, glabrous. Color: Close to 200A.Garden performance: Plants of the newCalibrachoahave been observed to have good garden perfotmance and to tolerate wind, rain, temperatures ranging from about 5C to about 40C and to be suitable for USDA Hardiness Zone 11.Pathogen & pest resistance: To date, plants of the newCalibrachoahave not been observed to be resistant to pathogens and pests common toCalibrachoaplants. | 7,052 |
PP35599 | DESCRIPTION OF THE PLANT The following detailed description sets forth the characteristics of the new variety as the result of asexual reproductions performed via in vitro tissue culture cuttings carried out in Gönnebek, Germany. Plants of the new variety were grown outdoors in 19 cm (3 liter) pots under normal field production conditions, and the color readings and measurements were observed outdoors under natural light on 22 week old plants in Gönnebek, Germany Color references are primarily to the 2015 R.H.S. Colour Chart of The Royal Horticultural Society of London, Sixth Edition, except where terms of ordinary significance are used. PLANT Time to initiate roots: About 7 days at approximately 19-20° C.Time to develop roots: About 40-50 days at approximately 18° C.Time to produce a finished flowering plant from a rooted cutting: About 12-14 weeks in a 19 cm container.Rooting habit: Exhibits numerous roots that are freely branching and healthy in appearance.Plant height: From 35.0-50.0 cm, but averages closer to 35.0 cm.Plant width: 25.0-30.0 cm.Habit: Upright, compact, and uniform growth with numerous branches.Disease/pest resistance: Nothing unusual noted to date.Temperature tolerance: Nothing unusual noted to date.Drought tolerance: Average.Branches (flowering stems):Number per plant.—10-20.Length.—20.0-30.0 cm.Diameter.—3.0-10.0 mm.Internode length.—1.0-5.0 cm.Angle.—Upright and outward.Strength.—Strong.Texture.—Pubescence present.Color.—Close to Yellow-Green Group RHS 144A at the bottom, graduating up to 147A at the top.Foliage:Arrangement.—Single.Leaf.—Length: 4.0-20.0 cm. Width: 1.0-5.0 cm. Shape: Lanceolate. Apex: Acuminate. Base: Attenuate to acute. Margin: Entire. Aspect: Straight to curved. Texture: Upper surface: Rough. Lower surface: Rough. Rugosity: Medium. Color: Young leaves: Upper surface: Close to Green Group RHS 137B. Lower surface: Close to Green Group RHS 137C. Mature leaves: Upper surface: Close to Green Group RHS 137B. Lower surface: Close to Green Group RHS 137C. Petiole: None present. Veins: Venation type: Cross-venulate to longitudinal. Color: Upper surface: Close to Yellow-Green Group RHS 145A. Lower surface: Close to Yellow-Green Group RHS 145B. INFLORESCENCE Bud:Diameter.—1.0-3.5 cm.Length.—1.3-2.0 cm.Color.—From Green Group RHS N138B at the young stage up to Greyed-Purple Group RHS 187A just before opening.Appearance: Elliptic-shaped ray florets and tubular-shaped disc florets.Natural flowering season: Flowering occurs from July-September in Gönnebek, Germany, beginning approximately 12-14 weeks after planting.Average number of inflorescences per plant: 10-20.Average number of inflorescences per branch: 1-3.Disc and ray floret arrangement: Disc florets are arranged in the middle of the receptacle of the composite, single, freely flowering plant, with ray florets extending outwardly therefrom.Fragrance: Faint and sweet.Inflorescence:Diameter.—4.0-8.0 cm.Height(depth).—2.0-3.5 cm.Diameter of disc.—Approximately 11.5 cm.Receptacle height.—1.0 cm.Receptacle diameter.—1.5-3.5 cm.Ray florets:Number per inflorescence.—18-26.Arrangement.—In two or three whorls.Attitude upon emergence from involucre.—Horizontal.Length.—2.0-5.5 cm.Width.—1.2-2.0 cm.Shape.—Elliptical.Apex.—Obtuse, with indentations of deep depth.Base.—Acute.Margin.—Entire.Texture.—Upper surface: Smooth and glabrous. Lower surface: Rough.Color.—When opening: Upper surface: Close to Orange Group RHS 28A. Lower surface: Close to Red Group RHS 39B. At maturity: Upper surface: Close to Orange-Red Group RHS 34D. Lower surface: Close to Greyed-Red Group RHS 180D. Ground color description: Close to Orange Group RHS 28A.Venation.—Appearance: Parallel. Color: Upper surface: Same color as the florets. Lower surface: Same color as the florets.Disc florets:Number per inflorescence.—Numerous; too many to quantify.Arrangement.—In the center of receptacle.Length.—8.0-15.0 mm.Width.—1.0-2.0 mm.Shape.—Tubular.Apex.—Pointed.Color.—Immature: Close to Greyed-Purple Group RHS 187A. At maturity: Close to Greyed-Purple Group RHS 187B.Paleae.—Average length: 12.0-15.0 mm. Color: Main color is close to Green Group RHS 138A, with close to Greyed-Purple Group RHS 187B below the tip.Phyllaries:Number per inflorescence.—40-50.Arrangement.—In three to four whorls.Length.—Approximately 1.0 cm.Width.—2.0-4.0 mm.Shape.—Lanceolate.Apex.—Elongated oval.Base.—Fused.Margin.—Entire.Texture.—Upper surface: Rough. Lower surface: Rough.Color.—Immature: Upper surface: Close to Green Group RHS NN137C. Lower surface: Close to Green Group RHS NN137C. At maturity: Upper surface: Close to Green Group RHS NN137C. Lower surface: Close to Green Group RHS NN137C.Reproductive organs:Androecium:Presence.—On disc florets.Number(per floret).—One.Filament length.—1.0-2.0 mm.Filament color.—Orange-brown.Anther.—Shape: Oval. Length: 1.0 mm. Color: Orange-brown.Pollen.—Color: Close to Yellow-Orange Group RHS 15B. Amount: Plentiful - too much to quantify.Gynoecium:Presence.—In disc and ray florets.Pistil length.—1.0-2.0 mm.Stigma.—Shape: Two-parted. Color: Orange-brown.Style.—Length: 1.0-2.0 mm. Color: Orange-brown.Seeds:Overall size.—1.0-2.0 mm. | 5,175 |
PP35600 | DETAILED BOTANICAL DESCRIPTION OF THE CULTIVAR Foliage color was determined under full sun conditions in the middle of the day in a glass-covered greenhouse. Color references are to the RHS Colour Chart of The Royal Horticultural Society of London (RHS), 2007 5th Edition.Coleusleaves are rarely one solid color but encompass hues, shades and tints, and color patterns differ from one genotype to another due to varying levels of variegation. The following detailed description of ‘UF20-20-5’ was obtained using eight-week-old plants grown from unrooted cuttings in July-September 2022 in a glass-covered greenhouse in Gainesville, Florida. The plants were propagated in mist for ten days after cuttings were stuck, then grown in one-gallon pots for approximately six and a half additional weeks. Botanical Description Botanical classification:Family.—Lamiaceae.Botanical name.—Coleus scutellarioides.Common name.—Coleus.Cultivar.—‘UF20-20-5’.Parentage:Female or seed parent.—‘UF19-36-2’.Male or pollen parent.—Unknown.Plant description:Habit.—Upright and spreading.Height(from top of soil).—30-35 cm.Width(horizontal plant diameter).—70-75 cm.Propagation:Type cuttings.—Vegetative meristem tip cuttings having at least 1 node.Time to initiate roots.—3-4 days.Time to produce a rooted cutting.—7-10 days.Root habit.—Fibrous.Root description.—Callus forms in 2 to 3 days, roots initiate in 3-4 days and become a highly branched cutting in 7-10 days.Branches:Quantity per plant.—Approximately 7.Branch color.—RHS 143B (yellow green).Texture.—Smooth.Pubescence.—Not present.Stem description.—Square-shaped stem.Branch diameter.—0.7-0.8 cm at the base of a 34-cm-long branch.Branch length.—34-38 cm.Internode length.—3-4 cm measured at mid-branch.Anthocyanin.—Not present.Foliage description:Quantity of leaves per branch.—22-23. Arrangement: Opposite.Fragrance.—Not fragrant.Shape.—Ovate.Length.—11-12 cm.Width.—9-10 cm.Apex.—Broadly Acute.Base.—Attenuate.Margin.—Highly Lobed.Leaf texture.—Upper surface: Pulverulent. Lower surface: Smooth.Venation color, mature and immature leaves.—Upper surface, upper vein: RHS N186C (greyish red) and RHS 186B (purplish red). Upper surface, basal region: RHS 149D (pale yellow green). Lower surface: RHS 140D (light yellowish green).Venation pattern.—Upper surface: Reticulate. Lower surface: Reticulate.Color, immature leaf.—Upper surface, major color: RHS 175A (reddish brown). Upper surface, margins: RHS N144C (yellow green). Lower surface, major color: RHS 139C (yellow green). Lower surface, margins: RHS 144B (yellow green).Color, mature leaf.—Upper surface, major color: RHS N186C (greyish red). Upper surface, margins: RHS N144C (yellow green). Upper surface, base: RHS 149D (pale yellow green). Upper surface, around the main vein: RHS 186B (purplish red). Lower surface, major Color: RHS 137C (yellow green). Lower surface, margins: RHS 144B (yellow green). Lower surface, around the main vein: RHS 56C (pale purplish pink).Petiole length.—3.5-4.0 cm.Petiole diameter.—0.3-0.4 cm.Petiole color.—RHS 143C (yellow green).Petiole texture.—Smooth, no pubescence.Flowers and seeds: Flowers and seeds have not been observed to date during formal trials in Gainesville, Florida.Fruit/seed set: Fruit/seed not observed.Disease and insect resistance: Disease and insect resistance is typical of the species, thus no claims are made of any superior disease or insect resistance with this cultivar. The most common insect pests observed on this plant in Gainesville, Florida have been long-tailed or citrus mealybugs (Pseudococcusspp.), which occur on older stock plant material held in the greenhouse for over 3-4 months. Impatiens Necrotic Spot Virus (Bunyaviridae) has also been observed in plants confined in greenhouses with mixed crops (peppers) infected with Western flower thrips (Frankliniella occidentalis). The most common pathogen of this species in the U.S. is downy mildew (Perononspora lamii). This pathogen has been observed in stock materials grown closely together in cooler growing seasons. Comparison with Known Cultivars When the new cultivar ‘UF20-20-5’ is compared to the commercial cultivar ‘UF16-45-18’ (unpatented, commercial name “STAINED GLASSWORKS® Crown Jewel,” owned by Dümmen Group B.V., Netherlands), ‘UF20-20-5’ is superior because ‘UF20-20-5’ has not been observed to flower in any trials to date, thus it retains its foliage longer and provides longer display life in the summer landscape. In contrast, ‘UF16-45-18’ is less compact and produces flowers late in the year. ‘UF20-20-5’ is a vigorous cultivar that can easily grow over four feet tall in the landscape, maintaining similar color in both sun and shade. Vegetative cuttings form ‘UF20-20-5’ form roots in one week and consistently produce vivid colors in the greenhouse. | 4,807 |
PP35601 | DETAILED BOTANICAL DESCRIPTION The chart used in the identification of the colors is that of The Royal Horticultural Society (The R.H.S. Colour Chart, 2001 edition), London, England. The terminology which precedes reference to the chart has been added to indicate the corresponding color in more common terms. The description is based on the observation of nine-years-old specimens of the new variety during April while budded on cuttings and growing outdoors at Le Cannet des Maures, Var, France.Botantical classification:Rosa hybridacultivar MEIGUNFLA.Commercial classification: Climbing Rose Plant.Plant:Habit.—Climbing.Height.—Approximately 200 cm on average.Width.—Approximately 300 cm on average.Branches:Color.—Young stems: commonly near Yellow-Green Group 144A more or less suffused with anthocyanin color near Greyed-Purple Group 184B. — adult wood: commonly near a color between Green Group 143B and near Yellow-Green Group 144A.Length.—From the crown to the flower is typically between 100 cm to 200 cm.Diameter.—Typically between 0.5 cm to 2.0 cm.Thorns.—Configuration on adult stems: slightly concave, elongated and curved downwards on the upper surface and very concave on the under surface. — long prickles — quantity: approximately 7 thorns on average per 10 cm long young stem and typically between 25 to 30 thorns on average per 10 cm long adult stem. — long prickles — length: approximately 0.9 cm on average on young stems and typically between 0.5 cm to 1.0 cm on adult stems. — long prickles — width at base: typically between 1.1 cm to 1.4 cm on young stems and typically between 0.7 cm to 1.4 cm on adult stems. — long prickles — base shape: oval, elongated, long and the tip is hooked downwards on young stems and on adult stems. — long prickles — color on young stems: commonly near Yellow-Green Group 144A amply suffused with anthocyanin color near Greyed-Purple Group 184B. — long prickles — color on adult stems: commonly near Greyed-Orange Group 165B. — small prickles — quantity: approximately 7 thorns on average per 10 cm long young stem and typically more than 50 thorn per 10 cm long adult stem. — small prickles — length: typically between 0.1 cm to 0.5 cm on young stems and typically between 0.1 cm to 0.5 cm on adult stems. — small prickles — width at base: typically between 0.1 cm to 0.4 cm on young stems and typically between 0.1 cm to 0.4 cm on adult stems. — small prickles — base shape: oval, very narrow, and short on young stems and oval, narrow, and rather short on adult stems. — small prickles — color on young stems: commonly near Greyed-Purple Group 184B and near Greyed-Orange Group 164B at the top. — small prickles — color on adult stems: commonly near Greyed-Orange Group 165B.Internode.—Numbers on the entire branch: typically between 20 to 50. — length: typically between 2.5 cm to 5.5 cm.Foliage:General appearance.—Dense, glossy.Number of leaflets.—3, 5, 7; most often 5.5leaflets leaf.—Length: typically between 9.0 cm to 13.0 cm. — width: typically between 6.5 cm to 9.5 cm.Terminal leaflet.—Length: typically between 4.5 cm to 5.5 cm. — width: typically between 2.9 cm to 3.2 cm.Young shoots.—Anthocyanin coloration: commonly near Greyed-Purple Group 184B.New foliage.—Upper surface color commonly near Yellow-Green Group 146A. — under surface color: commonly near Yellow-Green Group 147B more or less suffused with near Greyed-Purple Group 184B.Adult foliage.—Upper surface color: commonly near Green Group 137B. — under surface color: commonly near Green Group 137C.Leaflets:Shape.—Tip piculate. — base: rounded.Intensity of glossiness.—Strong.Texture.—Moderately leathery.Smoothness.—Upper and under surfaces are smooth.General appearance.—Oval.Serration.—Small and single.Undulation on the margin.—Weak.Venation.—Color is commonly near Yellow-Green Group 145B and pattern is imparipinnate.Petiole rachis.—Color of upper surface: commonly near Yellow-Green Group 144A more or less suffused with anthocyanin color near Greyed-Purple Group 184B. — color of under surface: commonly near Yellow-Green Group 145B slightly suffused with anthocyanin color near Greyed-Purple Group 184B. — texture: upper surface is smooth, under surface is smooth. — rachis of terminal leaflet: length is typically between 2.5 cm to 3.8 cm and diameter is approximately 0.1 cm on average.Petioles.—Upper surface: smooth. — under surface: smooth. — color of upper surface: commonly near Yellow-Green Group 145B. — color of under surface: commonly near Yellow-Green Group 144B slightly suffused with anthocyanin color near Greyed-Purple Group 184B. — length: typically between 2.5 cm to 3.3 cm. — diameter: approximately 0.1 cm on average.Stipules.—Length: typically between 1.8 cm to 2.0 cm. — width: typically between 0.1 cm to 0.2 cm. — general appearance: narrow. — texture: smooth on upper and under surfaces. — color of upper surface: commonly near Green Group 137B. — color of under surface: commonly near Green Group 137C.Inflorescence:Number of flowers per stem.—Typically between 1 to 4 flowers per stem.Lastingness of the bloom.—On the plant: typically between 10 to 12 days. — in vase: not tested.Bud.—Shape: globular. — size: small. — length: approximately 2.0 cm on average. — width: approximately 2.5 cm on average. — color as calyx breaks: upper surface: commonly near Red Group 46A; basal spot is very little and color is commonly near Yellow Group 3C. under surface: commonly near Red Group 46A; basal spot is very little and color is commonly near Yellow Group 3C.Sepals.—Number: commonly 5. — length: typically between 3.0 cm to 3.6 cm. — width: typically between 0.8 cm to 1.0 cm (on median part). — shape: at the top: elongate and narrow. at the base: flat at union with the receptacle. — extensions: typically 2 sepals without extensions, 3 sepals with medium extension; length of extension is typically between 0.7 cm to 1.8 cm; width of extension is typically between 0.1 cm to 0.3 cm. — upper surface: texture: tomentous. color: commonly near Green Group 143D. — under surface: texture: smooth. color: commonly near Green Group 143A.Receptable.—Color commonly near Yellow-Green Group 144A sometimes suffused with near Greyed-Purple Group 184A. — length: approximately 1.1 cm on average. — width: approximately 0.9 cm on average. — surface: smooth. — shape: funnel shaped.Peduncle.—Length: typically between 4.0 cm to 4.5 cm. — width: typically between 0.2 cm to 0.4 cm. — surface: very slightly prickled. — color: commonly nearYellow-Green Group 144A sometimes suffusedwith near Greyed-Purple Group 184B.Flower.—Diameter when open: approximately 8.0 cm on average. — depth of the flower: approximately 5.0 cm on average. — shape: cup shaped. — shape when viewed from above: irregular rounded. — shape of the upper part of the flower profile: flat. — shape of the lower part of the flower profile: flat. — type: double. — number of petals under normal conditions: approximately 100 on average. — petals: shape: obovate (rounded at the top and cuneiform at the base). texture: semi-hard. length: typically between 2.8 cm to 5.0 cm. width: typically between 2.3 cm to 4.5 cm. — undulation of the petal: absent. — reflexing of the petal: medium. — petal incision: absent. — petal arrangement: imbricated with 10 petaloids (petaloid shape is deformed petals). — petal drop: petals drop off cleanly before drying. — fragrance: none. — discoloration of the flower: no. — color when opening: basal spot on the upper surface: commonly near Yellow Group 3D. upper surface: commonly near Red Group 45A. basal spot on the under surface: commonly near Yellow Group 3D. under surface: commonly near Red Group 46A. — color of the open flower: basal spot on upper surface: commonly near Yellow Group 3D. upper surface: commonly near Red Group 45A. basal spot on under surface: commonly near Yellow Group 3D. under surface of the flower: commonly near Red Group 46A. — anthers: approximately 90 on average, length is approximately 0.2 cm on average, width is approximately 0.1 cm on average, coloration is commonly near Greyed-Orange Group 163B, and arrangement is regular around styles. — filaments: length is typically between 0.2 cm to 0.8 cm and coloration is commonly near Yellow Group 3B slightly suffused at the top with anthocyanin color near Greyed-Purple Group 184C. — styles: length is typically between 0.6 cm to 1.4 cm, coloration is commonly near Greyed-Yellow Group 161C, and number is approximately 80 on average. — stigmas: length is approximately 0.3 cm on average and coloration is commonly near Yellow Group 13A. — pollen: medium quantity; color is commonly near Yellow-Orange Group 21A. — hips: information not available.Development:Vegetation.—Strong.Blooming.—Early in the season and recurrent, typically from May to October in France.USDA hardiness zone.—Zone 5 to 9.Tolerance to disease.—Good, and particularly against black spot (Diplocarpon rosae) and leaf spot (Cercospora rosicola). The new ‘MEIGUNFLA’ variety has not been observed under all possible environmental conditions to date. Accordingly, it is possible that the phenotypic expression may vary somewhat with changes in light intensity and duration, cultural practices, and other environmental conditions. | 9,245 |
PP35602 | DETAILED BOTANICAL DESCRIPTION The chart used in the identification of the colors is that of The Royal Horticultural Society (The R.H.S. Colour Chart, 2001 edition), London, England. The terminology which precedes reference to the chart has been added to indicate the corresponding color in more common terms. The description is based on the observation of one-year-old specimens of the new variety during September while budded by cuttings and growing outdoors at Le Cannet des Maures, Var, France.Botantical classification:Rosa hybridacultivar MEICTARUS.Commercial classification: Hybrid Tea Rose Plant.Plant:Habit.—Shrub.Height.—Approximately 100 cm on average.Width.—Approximately 100 cm on average.Branches:Color.—Young stems: commonly near Green Group 143C suffused with near Greyed-Orange Group 177B. Adult wood: commonly near Yellow-Green Group 147C.Length.—From the crown to the flower is typically between 40 cm to 70 cm.Diameter.—Typically between 0.6 cm to 1.0 cm on average.Young shoots.—Anthocyanin coloration: commonly near Greyed-Orange Group 177B.Thorns.—Configuration on adult stems: slightly concave and elongated on the upper surface; and curved downwards on the under surface. Long prickles — quantity: commonly 2 thorns per 10 cm long young stem and commonly 6 thorns per 10 cm long adult stem. Long prickles — length: typically between 0.4 cm to 0.5 cm on young stems and approximately 0.4 cm on adult stems. Long prickles — base shape: narrow oval on young stems and narrow obovate on adult stems. Long prickles — color on young stems: commonly near Yellow-Green Group 146B suffused with near Greyed-Orange Group 176B. Long prickles — color on adult stems: commonly near Greyed-Orange Group 165A at the base to near Greyed-Orange Group 166A at the top. Small prickles — quantity: absent on young stems; commonly 7 thorns per 10 cm long adult stem. Small prickles — length: approximately 0.1 cm on average. Small prickles — base shape: broad oval. Small prickles — color: commonly near Greyed-Orange Group 165A.Internode.—Numbers on the entire branch: typically between 12 to 22. Length: typically between 2.0 cm and 3.5 cm.Foliage:General appearance.—Very dense, with a semi-glossy aspect.Number of leaflets.—3, 5, 7; most often 5.7leaflets leaf.—Length: typically between 11.0 cm to 12.0 cm. Width: typically between 8.0 cm to 9.5 cm.Terminal leaflet.—Length: typically between 5.0 cm to 5.5 cm. Width: typically between 3.2 cm to 3.5 cm.New foliage.—Upper surface color: commonly near Yellow-Green Group 147A suffused with near Greyed-Purple Group 187B. Under surface color: commonly near Yellow-Green Group 147B suffused with near Greyed-Purple Group 187B.Adult foliage.—Upper surface color: commonly near Green Group 137A. Under surface color: commonly near Green Group 138B. Anthocyanin coloration: very slight, commonly near Greyed-Orange Group 177B on under surface.Leaflets:Shape.—Top: acuminate. Base: obtuse to rounded.Intensity of glossiness.—Medium.Texture.—Upper surface is leathery, smooth; under surface is bumpy.General appearance.—Oval.Serration.—Small and single.Undulation on the margin.—Medium.Venation.—Color is commonly near Yellow-Green Group 144A on the upper surface and near Yellow-Green Group 144B on the under surface; pattern is imparipinnate.Petiole rachis.—Color of upper surface: commonly near Yellow-Green Group 144A. Color of under surface: commonly near Yellow-Green Group 144B. Texture: upper surface is few glandular, under surface is few prickles. Rachis of terminal leaflet: length is approximately 3.5 cm and diameter is typically 0.15 cm to 2.0 cm.Petioles.—Upper surface: few glandular. Under surface: no prickles. Color of upper surface: commonly near Yellow-Green Group 144A. Color of under surface: commonly near Yellow-Green Group 144B. Length: typically between 2.5 cm to 3.5 cm. Diameter: typically between 0.15 cm to 0.2 cm.Stipules.—Length: typically between 1.5 cm to 1.7 cm. Width: typically between 0.15 cm to 0.2 cm. General appearance: narrow. Texture: smooth. Color of upper surface: commonly near Yellow-Green Group 144B. Color of under surface: commonly near Yellow-Green Group 144C.Inflorescence:Number of flowers per stem.—Between 1 to 5 flowers per stem.Lastingness of the bloom.—On the plant: approximately 7 days on average. In vase: not tested.Bud.—Shape: conical. Size: medium. Length: approximately 3.0 cm on average. Width: approximately 2.5 cm on average. Color as calyx breaks: upper surface: commonly near Red-Purple Group 62D, basal spot is very little and near Greyed-Yellow Group 160C. under surface: commonly near Red-Purple Group 62D suffused with near Red-Purple Group 57B, basal spot is very little and near Greyed-Yellow Group 160C.Sepals.—Number: commonly 5. Length: typically between 1.5 cm to 3.0 cm. Width: typically between 0.5 cm to 0.8 cm on median part. Shape: elongated and narrow. Extensions: present, very weak typically between 0.2 cm to 0.6 cm in length. Upper surface: texture: tomentous. color: commonly near Green-White Group 157A. Under surface: texture: smooth. color: commonly near Yellow-Green Group 144A slightly suffused with near Greyed-Orange Group 176A.Receptacle.—Color: commonly near Yellow-Green Group 144B. Length: approximately 0.6 cm on average. Width: approximately 0.6 cm on average. Surface: smooth. Shape: funnel shaped.Peduncle.—Length: typically between 2.0 cm to 2.5 cm. Width: approximately 0.3 cm on average. Surface: glandular. Color: commonly near Yellow-Green Group 144A slightly suffused with near Greyed-Orange Group 176A.Flower.—Diameter when open: approximately 8.0 cm. Shape: cup shaped. Shape when viewed from above: irregular rounded. Type: very double. Number of petals under normal conditions: approximately 70 on average. Petals: shape: attenuated at the base and rounded at the top; general shape is conical. texture: medium hard. length: typically between 2.0 cm to 4.0 cm. width: typically between 1.8 cm to 4.5 cm. Undulation of the petal: weak. Reflexing of the petal: absent. Petal incision: medium. Petal arrangement: imbricated without petaloids. Petal drop: petals drop off cleanly before drying. Fragrance: strong (lychees and slight grapefruit). Discoloration of the flower: no. Color when opening: basal spot on the upper surface: commonly near Greyed-Yellow Group 160C. upper surface: commonly near Red-Purple Group 62D. basal spot on the under surface: commonly near Greyed-Yellow Group 160C. under surface: commonly near Red-Purple Group 62D suffused with near Red-Purple Group 57B. Color of the open flower: basal spot on the upper surface: commonly near Greyed-Yellow Group 160A. upper surface of the flower: commonly near Red Group 36D edged with near Red-Purple Group 62B. basal spot on the under surface: commonly near Greyed-Yellow Group 160B. under surface of the flower: commonly near Red-Purple Group 62D suffused with near Red-Purple Group 57C. Anthers: number is typically between 15 to 20, length is approximately 0.2 cm on average, width is approximately 0.1 cm on average, coloration is commonly near Greyed-Orange Group 163A, and arrangement is regular around styles. Filaments: length is typically between 0.3 cm and 0.9 cm and coloration is commonly near Greyed-Yellow Group 160A at the base to Greyed-Orange Group 172C at the top. Styles: length is typically between 0.4 cm to 0.8 cm, coloration is commonly Greyed-Purple Group 185C, and number is approximately 60 on average. Stigmas: length is commonly less than 0.1 cm and coloration is commonly near Greyed-Yellow Group 161A. Pollen: not available. Hips: very rare, no additional information available.Development:Vegetation.—Strong.Blooming.—Early in the season, abundant and recurrent from May to the first frosts in France.USDA hardiness zone.—Zone 5 to 10.Tolerance to disease.—Good, and particularly against rust (Phragmidiumsp.) and mildew (Peronospora sparsa). The new ‘MEICTARUS’ variety has not been observed under all possible environmental conditions to date. Accordingly, it is possible that the phenotypic expression may vary somewhat with changes in light intensity and duration, cultural practices, and other environmental conditions. | 8,193 |
PP35603 | DETAILED BOTANICAL DESCRIPTION OF THE VARIETY The following detailed botanical description was recorded at Seiches-sur-le-Loir, France during the 2020 and 2021 growing seasons. Descriptions of the tree, blossoms and leaves were recorded from trees planted in 2015 and grown on Pajam®2 ‘Cepiland’ (U.S. Plant Pat. 7,715) rootstock. Described fruits were grown on trees planted in 2020 and grown on Pajam®2 ‘Cepiland’ rootstock. All colors are described with reference to The Royal Horticultural Society Colour Chart (6thed. 2015, reprinted 2019). It should be understood that the characteristics described will vary somewhat depending upon cultural practices and climatic conditions, and will vary with location and season. Quantified measurements are expressed as an average of measurements taken from a number of individual plants of the new variety. The measurements of any individual plant or any group of plants of the new variety may vary from the stated average.Tree:Vigor.—Medium.Type.—Ramified.Habit.—Spreading to drooping.Bearing.—On shoots.Spread of mature tree.—1.5 m after pruning.Height.—2.0 m after pruning.Trunk diameter(at30cm above the graft).—30 mm.Bark texture.—Rough.Bark color.—Greyed-purple N187D and greyed-orange 166A.Lenticel length.—2 mm.Lenticel width.—1 mm.Lenticel shape.—Oblong.Lenticel color.—Yellow-orange 20B.Lenticel density.—4 per cm2.Branch (fruiting branches located at about 1 m above the graft union):Length.—70 cm.Diameter.—12.5 mm.Crotch angle.—80°.Bark color.—Brown N200C and greyed-orange 166A.Lenticel length.—2 mm.Lenticel width.—1 mm.Lenticel shape.—Oblong.Lenticel color.—Yellow-orange 20B.Lenticel density.—6 per cm2.One year old shoot:Length.—35 cm.Diameter.—4.3 mm.Color.—Greyed-purple 187A.Pubescence.—Weak.Internode length.—28 mm.Lenticel length.—0.5 mm.Lenticel width.—0.5 mm.Lenticel shape.—Round.Lenticel color.—Yellow-orange 15D.Lenticel density.—12 per cm2.Color of vegetative buds.—Greyed-purple 187A.Shape of vegetative bud apex.—Pointed.Position of vegetative buds in relation to shoots.—Adpressed.Flower buds (described at balloon stage):Quantity per spur.—5.Bud shape.—Conical.Apex shape.—Rounded.Length.—10 mm.Diameter.—7 mm.Color.—Red-purple 58A.Flowers:Inflorescence type.—Umbel.Diameter of fully open flower.—29 mm.Depth of fully open flower.—11 mm.Relative position of petal margin.—Free.Number per cluster.—Average 5.Date of first bloom.—April 7 (trees planted in 2020).Date of full bloom.—April 18 (trees planted in 2020).Pollination requirement.—Most varieties with similar bloom date.Petals:Number per flower.—5.Petal shape.—Elliptic.Length.—16 mm.Width.—10 mm.Apex shape.—Rounded.Base shape.—Cuneate.Margin.—Entire.Color of upper surface.—Red-purple 71B.Color of lower surface.—Red-purple 70B.Texture of upper surface.—Smooth.Texture of lower surface.—Smooth.Pistils:Length.—8 mm.Color.—Red 54D and greyed-yellow 160B.Quantity per flower.—5.Stigma:Diameter.—0.5 mm.Color.—Greyed-yellow 160B.Style:Length.—7 mm.Color.—Red 54D.Ovary:Length.—4 mm.Diameter.—3 mm.Color.—Yellow-green 146C.Anthers:Quantity.—18 to 20.Position relative to stigma.—Level to slightly above.Anther length.—2 mm.Anther width.—1 mm.Color of anther.—Red-purple 70B.Pollen presence.—Present in moderate quantity.Pollen color.—Yellow-orange 15D.Pedicel:Length.—7 mm.Diameter.—1 mm.Color.—Greyed-green 194A.Pubescence.—Strongly pubescent, white N155A.Sepals:Quantity.—5.Color of upper surface.—Greyed-green 194A.Color of lower surface.—Green 137C.Sepal shape.—Triangular.Apex shape.—Acute.Margin.—Entire.Length.—6 mm.Width.—2 mm.Texture.—Both surfaces canescent.Attitude in relation to corolla.—Curved downward.Leaves:Shape.—Broad ovate.Length.—100.3 mm.Width.—57.7 mm.Length to width ratio.—1.7.Blade margin.—Serrulate.Apex.—Acute with broad long acuminate tip.Base shape.—Rounded.Texture.—Upper surface — Glabrous.Texture.—Lower surface — Canescent.Leaf color.—Upper surface — Green 137A.Leaf color.—Lower surface — Greyed-green 194A.Attitude in relation to shoot.—Upwards.Petiole:Length.—41.1 mm.Diameter.—2 mm.Color.—Red-purple 59A.Color of anthocyanin at base.—Purple N77A.Stipules:Quantity.—2 per leaf.Shape.—Oblanceolate.Length.—About 7 mm.Width.—About 1 mm.Texture.—Upper surface — Glabrous.Texture.—Lower surface — Canescent.Color.—Upper surface — Green 137A.Color.—Lower surface — Greyed-green 194A.Fruit:Quantity per cluster.—3.Diameter.—71.8 mm.Height.—65 mm.Height to width ratio.—0.9.Weight.—167.1 g.General shape in profile.—Cylindrical.Position of maximum diameter.—At equator.Ribbing.—Absent.Crowning at calyx end.—Absent to weak.Bloom of skin.—Absent to weak.Greasiness of skin.—Absent to weak.Background color of skin.—Yellow-orange 18B.Over color of skin.—Greyed-purple 187A (dark red).Amount of over color.—99%.Intensity of over color.—Very intense.Pattern of over color.—Only solid flush.Fruit lenticel color.—Orange-white 159B.Fruit lenticel diameter.—0.3 mm.Fruit lenticel shape.—Round.Fruit lenticel density.—Moderate.Russet around stalk cavity.—Weak to medium; russet is rough.Russet on cheeks.—Absent.Russet around eye basin.—Absent.Length of stalk.—25 mm.Diameter of stalk.—1.66 mm.Stalk color.—Greyed-purple 187A.Depth of stalk cavity.—13.3 mm.Width of stalk cavity.—30.3 mm.Depth of eye basin.—2.3 mm.Width of eye basin.—28.1 mm.Diameter of eye.—4.2 mm.Aperture of eye.—Closed.Length of sepal.—5.1 mm.Firmness of flesh.—Medium; 7.5 kg/cm3(2022 harvest).Flesh texture.—Medium to coarse.Flesh color.—Red N45C on 80% of flesh; white N155C on 20% of flesh.Number of locules.—5.Aperture of locules.—Mostly open.Locule length.—10 mm.Locule width.—5 mm.Flavor and aroma.—Balanced with some astringency.Juiciness.—Medium to high.Brix.—12° Brix.Seeds:Quantity per fruit.—Average 7.5.Length.—9.9 mm.Width.—4.5 mm.Shape.—Moderately elongated oval.Color.—Brown 200B.Harvest:Harvest date.—Oct. 7, 2021; 10 days after ‘Golden Delicious’ (not patented).Number of picks.—2.Productivity.—About 8 kg per tree (3rdleaf trees grown on Pajam®2 ‘Cepiland’ rootstock).Disease resistance/susceptibility: None noted.Storageability: Moderate; about 3 months at 3° C.Market use: Fresh consumption. | 6,140 |
PP35604 | DETAILED BOTANICAL DESCRIPTION The following is a detailed description of the new cultivar as taken from 2-year-old trees grown in 1-gallon nursery containers in Forest Grove, Oregon. The phenotype of the new cultivar may vary with variations in environmental, climatic, and cultural conditions, as it has not been tested under all possible environmental conditions. The color determination is in accordance with the 2015 Colour Chart of The Royal Horticultural Society, London, England, except where general color terms of ordinary dictionary significance are used.General description:Plant type.—Coniferous evergreen.Growth habit.—Dense, conical, short, compact.Height and spread.—An average of 44 cm in height and 29 cm in width as grown in a one-gallon container, reaches 4.6 m in height and 3.7 m in spread as a 10-year-old plant in the landscape, reaches 6.1 m in height in 20 years in the landscape.Cold hardiness.—At least in U.S.D.A. Zone 3.Diseases and pests.—No susceptibility or resistance to pests or diseases has been observed.Root description.—Fibrous, moderately branched, moderately thick, a blend of N199B and N199C in color.Growth rate.—Moderate.Propagation.—Grafting.Root development.—Grafted in late winter with final scion successfully grafted in approximately 20 weeks, time required to produce a young tree; 12 months.Branch description:Trunk and branch shape.—Rounded.Branch size.—Main trunk; 17 cm in length, 2 cm in diameter, lateral branches; average of 14 cm in length, up to 3 cm in width, tertiary branches; up to 3 cm in length, 2 mm in width.Stem surface.—Young stems; smooth, matte, linear streaks cover the surface, mature and old wood; rugose, bark-like and matte.Branching.—Average of 11 lateral branches, 2 tertiary branches per lateral, strong central leader.Stem arrangement.—Lateral branches; whorled to opposite, tertiary branches; opposite.Stem aspect.—Strong, main stem vertical, lateral and tertiary stems held in a slightly upright angle.Internode length.—Average of 1 to 3 cm.Stem color.—Young stems; striations of 174A and 164B, mature stems; close to 161A, but lighter, old wood; blend of 164B, 165A and 165C.Resin glands.—None observed.Foliage description:Leaf arrangement.—Densely whorled needles.Leaf attachment.—Sessile.Leaf shape.—Acicular, needle shaped.Leaf division.—Simple.Leaf base.—Cuneate.Leaf apex.—Sharp and pointed, linear.Leaf venation.—Not visible.Leaf margins.—Entire.Leaf fragrance.—When crushed, it produces a pine-like fragrance.Leaf surface.—Upper surface; matte, lower surface; glossy, both surfaces highly glaucous.Leaf color.—Emerging 138C, summer with sun exposure N138B with heavy glaucous coating of N155A, shaded and winter 139A with glaucous coating of 190D.Leaf texture.—Dense, stiff and strong.Leaf aspect.—Vertical to slightly bowed to branch.Leaf size.—An average of 1.5 cm in length and 2 mm in diameter.Leaf quantity.—Average of 200 per branch 14 cm in length.Leaf buds.—5 mm in length and 2 mm in width, a blend of 166B and 165C in color, comprised of imbricate scales orbicular and cupped in shape and average of 2 mm in length and width.Cone description: Cones have not been observed to date. | 3,181 |
PP35605 | The photographs were taken using conventional techniques and although colors may appear different from actual colors due to light reflectance it is as accurate as possible by conventional photographic techniques. DETAILED BOTANICAL DESCRIPTION In the following description, color references are made to The Royal Horticultural Society Colour Chart 2015 except where general terms of ordinary dictionary significance are used. The following observations and measurements describe ‘P1’ plants grown outdoors in Waddinxveen, the Netherlands. The growing temperature ranged from approximately 18° C. to 27° C. during the day and from approximately 5° C. to 10° C. during the night. General light conditions are normal sunlight and numerical values represent averages of typical plant types.Botanical classification:Philadelphussp. ‘P1’. PROPAGATION Type of propagation typically used: Hardwood cuttings.Time to initiate roots: 6 weeks in summer.Time to produce a rooted cutting: 1 year from rooted plug. PLANT Age of plant described: 3 years old.Container size: 23 cm container.Plant type: Shrub.Growth habit: Compact.Plant spread: 95 cm.Plant height: 84 cm.Branching habit: Free branching. 5 basal branches.Length of primary lateral branches: 125 cm.Diameter of lateral branches: 7 mm.Quantity of lateral branches: 16.Stem:Color.—Young branches: RHS Yellow-Green 145A. Mature branches: RHS Red 59A. Woody branches: RHS Brown 199A.Strength.—Strong.Length.—Average range 40 to 70 cm, unpruned.Width.—Average 5 to 9 mm.Internode length: Average range 2 cm to 5 cm. FOLIAGE Leaf:Arrangement.—Opposite or sub-opposite.Length.—Average range 2.5 cm to 3.5 cm. Longest foliage 4.5 cm.Width.—Average range 1.5 cm to 1.8 cm. Widest foliage 2.3 cm.Shape of blade.—Ovate to narrow ovate.Apex.—Acute.Base.—Tapered.Margin.—Entire.Texture.—Glabrous.Color.—Young foliage upper side: RHS Green 137C. Young foliage under side: RHS Green 137C. Mature foliage upper side: Near RHS Green 137A. Mature foliage under side: Near RHS Green 137A.Venation.—Pattern: Pinnate. Venation color upper side: RHS Green 137C. Venation color under side: RHS Green 137C.Petiole.—Length: 3 mm. Diameter: 1.5 mm. Color: RHS Yellow-Green 144B. FLOWER Natural flowering season: Late May and June, reblooms in summer.Flowers per lateral stem: 18 flowers per branch are open. In total around 200 flowers open.Flowers buds per plant: 16 buds per branch.Individual flowers:Shape.—Cruciform.Diameter.—4.9 cm.Depth.—2.2 cm.Aspect.—Outwardly facing.Fragrance.—Strong, sweet, pleasant.Petals:Arrangement.—Cruciform, very slightly overlapping to non-overlapping.Number.—4.Shape.—Oblong to obovate.Margin.—Entire.Apex.—Rounded. Irregularly notched. Most commonly 1 notch about 6 mm deep. 2 to 4 shallow notches may be present instead.Base.—Attenuate.Length.—2 cm.Width.—1.4 cm.Texture.—Glabrous all surfaces.Color.—Upper surface: RHS White 155C and Red-Purple 70B. Under surface: RHS White 155C and Red-Purple 70B.Bud:Shape.—Ovate.Length.—About 12 mm.Diameter.—About 7 mm.Color.—RHS White 155C flushed Red-Purple 70B.Sepals:Quantity per flower.—4.Arrangement.—Cruciform.Shape.—Elliptic.Apex.—Aristate.Base.—Fused.Margin.—Entire.Length.—1.1 cm.Width.—0.4 cm.Texture.—Pubescent.Color.—Upper: RHS Yellow-Green 144A. Lower: RHS Yellow-Green 144A.Peduncle:Length.—About 5 mm.Diameter.—1 mm.Texture.—Pubescent.Angle.—Upright.Color.—RHS Yellow-Green 144A.Strength.—Strong.Pedicel: None.Petaloids: None. REPRODUCTIVE ORGANS Stamens:Number.—About 20.Filament length.—0.9 mm.Filament color.—RHS Yellow-White 158D.Anthers:Shape.—Linear, basifixed.Length.—1 mm.Color.—RHS Grey-Green 194A.Pollen amount.—Low.Pistil:Number.—1.Length.—6 mm.Style.—Length: About 4 cm. Color: RHS White 155D with Red-Purple 70B towards base.Stigma:Shape.—Oblong.Length.—2 mm.Color.—RHS Yellow 4D.Ovary color.—RHS Yellow-Green 144D. OTHER CHARACTERISTICS Fruits and seeds: Not observed to date.Disease/pest resistance: Neither resistance nor susceptibility to normal diseases and pests ofPhiladelphusobserved.Temperature range: Winter hardy to −29° C. | 4,076 |
PP35606 | DETAILED BOTANICAL DESCRIPTION In the following description, color references are made to The Royal Horticultural Society Colour Chart 2007, except where general terms of ordinary dictionary significance are used. The following observations and measurements describe ‘TSF 003’ plants grown outdoors in Escondido, CA. Temperatures ranged from 10° C. to 18° C. at night to 15° C. to 30° C. during the day. No artificial light, photoperiodic treatments were given to the plants. Measurements and numerical values represent averages of typical plant types.Botanical classification:Dipladenia sanderiTSF 003’. PROPAGATION Time to initiate roots: About 15 days at approximately 30° C. in the summer. About 25 days at 18° C. in the winter.Time to produce a rooted cutting: About 50 days at 20 to 30° C.Root description: Freely branching and white-brown in color. Not accurately measured with R.H.S. chart. PLANT Growth habit: Vining evergreen flowering plant. Initially upright, then vining, requiring support to maintain upright habit. Typically, plants are pinched approximately 3 months after planting a rooted cutting to encourage branching.Age of plant described: 10 months.Container size: 1 gallon.Height: Approximately 32 cm.Plant spread: Approximately 21 cm.Growth rate: Moderate.Branching characteristics: Strong branching occurs after pinch.Length of primary lateral branches: Approximately 10 to 15 cm.Diameter of lateral branches: Approximately 4 mm.Internode length: Approximately 15 to 24 mm.Stem texture: Glabrous.Color main lateral branches: Near RHS Green 143D. FOLIAGE Leaf:Arrangement.—Opposite, simple.Average length.—Approximately 6.5 cm to 8.0 cm.Average width.—Approximately 3 cm to 4 cm.Shape of blade.—Elliptic.Apex.—Acute.Base.—Obtuse.Attachment.—Petiolate.Margin.—Entire.Texture of top surface.—Glabrous.Texture of bottom surface.—Glabrous.Color.—Young foliage upper side: Variegated: marginal region mostly Yellow 11C. Blotched and marbled in center, Green 137A, 138B and 138C. Very slightly flushed near Red 47C along margin. Young foliage under side: Variegated: marginal region mostly Yellow 11C. Blotched and marbled in center, Green 137A, 138B and 138C. Mature foliage upper side: Variegated: (4 to 8 mm), irregular marginal region mostly Yellow 11C. Blotched and marbled in center Green N138A, N138C, Green 137C. Mature foliage under side: Variegated: (4 to 8 mm), irregular marginal region mostly Yellow 11C. Blotched and marbled in center Green N138A, N138C, N138D.Venation.—Type: Pinnate. Venation color upper side: Near RHS Yellow 11C. Lightly flushed Red 51D near base. Venation color under side: Near RHS Green 138C.Petiole.—Average Length: Approximately 1.0 cm. Color: Upper surface near Yellow-Green 145C flushed Red 51C; lower surface near Yellow-Green 145C. Diameter: Approximately 2 mm. Texture: Glabrous. FLOWER Natural flowering season: Naturally flowers Summer through late Autumn.Inflorescence type and habit: Single salverform flower; terminal or axillary; flowers face outward and upward.Rate of flower opening: Approximately 3 days from bud to fully opened flower.Flower longevity on plant: 4 to 5 days, after fully opened. Self-cleaning.Quantity of flowers: Young plants have a range of 3 to 10 flowers and buds at all times.Inflorescence size:Diameter.—Approximately 6.2 cm.Length.—Approximately 7.0 cm.Corolla tube length.—Approximately 4.5 cm.Throat diameter.—Approximately 1.5 cm.Corolla:Petal arrangement.—Single whorl of 5, fused into flared trumpet.Size.—Lobe Length: 3.5 cm. Lobe Width: 2.5 cm.Margin.—Entire.Apex.—Acute.Texture.—Smooth, velvety.Color:Petals.—When opening: Upper surface: Near RHS Red-Purple 63C, center flushed Red-Purple 64D. Lower surface: Near RHS Red-Purple 65C, center Red-Purple 63D. Fully opened: Upper surface: Near RHS Red-Purple 63C, center flushed Red-Purple 64D. Lower surface: Near RHS Red-Purple 65C, center Red-Purple 63D. Tube color (interior): Near RHS Yellow 8B and Yellow 13C with streaks near Red-Purple 63B. Tube color (exterior): Near RHS Yellow-White 158D with streaks near Red-Purple 63C and 63D.Bud:Shape.—Ovate to Lanceolate.Length.—Approximately 5.3 cm.Diameter.—Approximately 1.2 cm.Color.—Base near Yellow-White 158D. Upper section near Red-Purple 63B.Sepals:Arrangement.—5 per flower in a single whorl; fused.Shape.—Narrowly deltoid.Quantity.—5.Length.—Approximately 10 mm.Width.—Approximately 2 mm.Margin.—Entire.Apex.—Acuminate.Texture.—Smooth, waxy.Color.—Upper surface: Near RHS Yellow-White 158B. Lower surface: Near RHS Yellow-White 158B.Peduncles:Length.—Approximately 1.5 cm.Width.—Approximately 3 mm.Angle.—Straight or slight undulation.Strength.—Flexible and strong.Color.—Near RHS Yellow-Green 145D.Fragrance: None. REPRODUCTIVE ORGANS Stamens:Number.—5, anthers fused together at tips, filaments fused to corolla.Anther length.—1 cm.Anther color.—Near RHS Yellow 13C.Anther shape.—Oblong.Pollen.—None observed.Pistil:Number.—1.Length.—Approximately 2.5 cm.Style color.—Near RHS Yellow-White 158B.Stigma.—Shape: Globular. Color: Near RHS Orange-Red 34D. Ovary color: Near RHS Yellow-Green 145D. OTHER CHARACTERISTICS Disease resistance: Neither resistance nor susceptibility to normal diseases and pests ofDipladeniahave been observed.Drought tolerance and cold tolerance: Tolerates temperatures from approximately 0° C. to 40° C. and does not tolerate drought.Fruit/seed production: Not observed. | 5,423 |
PP35607 | DETAILED BOTANICAL DESCRIPTION The aforementioned photographs and following observations, measurements and values describe plants grown during the spring in 19-cm containers in a glass-covered greenhouse in De Kwakel, The Netherlands and under cultural practices typical ofMandevillacommercial production. During the production of the plants, day temperatures ranged from 20C to 22C and night temperatures averaged 18C. Plants were pinched one time four weeks after planting and were nine months old when the photographs and description were taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, 2015 Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:Mandevilla sanderi‘MAN222901’.Parentage:Female, or seed, parent.—Mandevilla sanderi‘Sunparapibra’, disclosed in U.S. Plant Pat. No. 19,649.Male, or pollen, parent.—Proprietary selection ofMandevilla sanderiidentified as code number 12-0152-162, not patented.Propagation:Type.—By vegetative cuttings.Time to initiate roots, summer.—About 21 days at temperatures about 22C.Time to initiate roots, winter.—About 27 days at temperatures about 22C.Time to produce a rooted young plant, summer.—About 40 days at temperatures about 22C.Time to produce a rooted young plant, winter.—About 50 days at temperatures about 22C.Root description.—Medium in thickness, fibrous to slightly fleshy; typically white to brown in color, actual color of the roots is dependent on substrate composition, water quality, fertilizers, substrate temperature and physiological age of roots.Rooting habit.—Freely branching; medium density.Plant description:Plant and growth habit.—Upright to spreading and vining plant habit; dense and bushy appearance; vigorous growth habit and moderate growth rate; plants can be produced with or without physical support (trellis).Plant height.—About 55 cm.Plant diameter(spread).—About 35 cm.Lateral branch description.—Branching habit: Moderate branching habit with about two primary branches, each primary branch with about two secondary lateral branches; pinching enhances lateral branch development. Length, primary branches: About 10 cm to 15 cm. Diameter, primary branches: About 5 mm. Internode length: About 2 cm. Strength: Firm. Aspect: Variable, if not on a trellis, erect to about 45 degrees from vertical; plants vining. Texture and luster: Smooth, glabrous; semi-glossy becoming woody and matte with development. Color, developing: Close to 144B. Color, developed: Close to 144A; when woody, close to N199B.Leaf description:Arrangement.—Opposite, simple.Length, fully expanded leaves.—About 6 cm to 11 cm.Width, fully expanded leaves.—About 3 cm to 4 cm.Shape.—Ovate.Apex.—Cuspidate.Base.—Obtuse.Margin.—Entire.Texture and luster, upper and lower surfaces.—Smooth, glabrous; leathery; glossy.Venation pattern.—Pinnate.Color.—Developing leaves, upper surface: Close to NN137B. Developing leaves, lower surface: Close to 146B. Full expanded leaves, upper surface: Close to NN137A; venation, close to 144A. Fully expanded leaves, lower surface: Close to 147B; venation, close to 144B.Petioles.—Length: About 1 cm to 2 cm. Diameter: About 3 mm to 4 mm. Strength: Strong. Texture and luster, upper and lower surfaces: Smooth, glabrous; glossy. Color, upper and lower surfaces: Close to 144A.Flower description:Flower type and flowering habit.—Single salverform flowers arranged in axillary racemes; flowers star-shaped and face upright to mostly outwardly; freely flowering habit with about six to ten flowers per inflorescence and during the flowering season, about 40 flowers per plant at one time.Natural flowering season.—Plants flower continuously from the late spring until the late summer in The Netherlands; early flowering habit, plants begin flowering about seven months after planting.Flower longevity on the plant.—About eight to ten days; flowers not persistent.Fragrance.—None detected.Inflorescence height.—About 10 cm.Inflorescence diameter.—About 15 cm.Flower buds.—Length: About 8 cm. Diameter: About 1.5 cm. Shape: Elongated, spindle-shaped. Texture and luster: Smooth, glabrous; semi-glossy. Color: Distally, close to 53A and proximally, close to N144D.Flowers.—Appearance: Flared trumpet, corolla fused and five-parted. Diameter: Relatively large, about 10 cm to 12 cm. Length: About 4 cm to 6 cm. Throat diameter: About 1.5 cm to 2 cm. Tube length: About 3 cm. Tube diameter: About 1.5 cm to 2 cm.Corolla.—Quantity and arrangement: Five petals arranged in a single whorl; proximal portion of the petals are fused into a tube; distal free portions slightly imbricate. Petal length: About 5 cm to 6 cm. Petal width: About 3.5 cm to 4 cm. Petal shape and appearance: Ovate to triangular, asymmetrical. Petal apex: Acute to cuspidate. Petal margin: Entire; slightly undulate. Petal texture and luster, upper and lower surfaces: Smooth, glabrous; semi-glossy. Throat and tube texture: Smooth, glabrous; semi-glossy. Color: Petals, when opening and fully opened, upper surface: Close to N45A; venation, close to N45A; color does not change with subsequent development. Petal, when opening and fully opened, lower surface: Close to N45B; venation, close to N45A; color does not change with subsequent development. Throat: Close to N25A; venation, close to N25A. Tube: Close to N144D; venation, close to N144D.Calyx.—Quantity and arrangement: Five sepals arranged in a single whorl; calyx, star-shaped. Length: About 1 cm. Diameter: About 5 mm. Sepal length: About 1 cm. Sepal width: About 3 mm. Sepal shape: Subulate. Sepal apex: Acute. Sepal margin: Entire. Sepal texture and luster, upper and lower surfaces: Smooth, glabrous; semi-glossy. Sepal color: When opening, upper and lower surfaces: Close to 145A. Fully opened, upper and lower surfaces: Close to 145A.Peduncles.—Length: About 3 cm to 4 cm. Diameter: About 2 mm to 3 mm. Strength: Strong. Aspect: Mostly upright. Texture and luster: Smooth, glabrous; glossy. Color: Close to 144A.Pedicels.—Length: About 1 cm to 2 cm. Diameter: About 3 mm. Strength: Strong. Aspect: Upright to about 30 degrees from peduncle axis. Texture and luster: Smooth, glabrous; glossy. Color: Close to 144B.Reproductive organs.—Stamens: Quantity and arrangement: Typically five; basifixed; anthers connate. Filament color: Close to 14D. Anther size: About 4 mm by 10 mm. Anther shape: Elongate. Anther color: Close to 14D. Pollen amount: Moderate. Pollen color: Close to 14D. Pistils: Quantity: Typically one. Pistil length: About 1 cm to 1.5 cm. Style color: Close to 150B. Stigma diameter: About 2 mm. Stigma shape: Club-shaped. Stigma color: Close to 150D. Ovary color: Close to 150B.Fruits and seeds.—To date, fruit and seed development have not been observed on plants of the newMandevilla.Pathogen & pest resistance: To date, plants of the newMandevillahave not been noted to be resistant to pathogens and pests common toMandevillaplants.Temperature tolerance: Plants of the newMandevillahave been observed to tolerate temperatures ranging from about 1C to about 45C. | 7,108 |
PP35608 | DETAILED BOTANICAL DESCRIPTION The aforementioned photographs and following observations, measurements and values describe plants grown during the spring in 19-cm containers in a glass-covered greenhouse in De Kwakel, The Netherlands and under cultural practices typical ofMandevillacommercial production. During the production of the plants, day temperatures ranged from 20C to 22C and night temperatures averaged 18C. Plants were pinched one time four weeks after planting and were ten months old when the photographs and description were taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, 2015 Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:Mandevilla sanderi‘MAN223901’.Parentage:Female, or seed, parent.—Proprietary selection ofMandevilla sanderiidentified as code number 15-0001, not patented.Male, or pollen, parent.—Proprietary selection ofMandevilla sanderiidentified as code number 14-0006, not patented.Propagation:Type.—By vegetative cuttings.Time to initiate roots, summer.—About 21 days at temperatures about 22C.Time to initiate roots, winter.—About 27 days at temperatures about 22C.Time to produce a rooted young plant, summer.—About 40 days at temperatures about 22C.Time to produce a rooted young plant, winter.—About 50 days at temperatures about 22C.Root description.—Medium in thickness, fibrous to slightly fleshy; typically white to brown in color, actual color of the roots is dependent on substrate composition, water quality, fertilizers, substrate temperature and physiological age of roots.Rooting habit.—Freely branching; medium density.Plant description:Plant and growth habit.—Upright to spreading and vining plant habit; dense and bushy appearance; vigorous growth habit and moderate growth rate; plants are typically grown with physical support (trellis).Plant height.—About 65 cm.Plant diameter(spread).—About 35 cm.Lateral branch description.—Branching habit: Moderate branching habit with about two to three primary branches, each primary branch with about two to three secondary lateral branches; pinching enhances lateral branch development. Length, primary branches: About 40 cm. Diameter, primary branches: About 4 mm. Internode length: About 2 cm to 4 cm. Strength: Firm. Aspect: Variable, if not on a trellis, erect to about 90 degrees from vertical; plants vining. Texture and luster: Smooth, glabrous; semi-glossy becoming woody and matte with development. Color, developing: Close to 144B. Color, developed: Close to 152A; when woody, close to N199C.Leaf description:Arrangement.—Opposite, simple.Length, fully expanded leaves.—About 6 cm to 8 cm.Width, fully expanded leaves.—About 3 cm to 4 cm.Shape.—Ovate.Apex.—Acuminate.Base.—Obtuse.Margin.—Entire.Texture and luster, upper and lower surfaces.—Smooth, glabrous; leathery; glossy.Venation pattern.—Pinnate.Color.—Developing leaves, upper surface: Close to 144A. Developing leaves, lower surface: Close to 146C. Full expanded leaves, upper surface: Close to NN137B; venation, close to 144A. Fully expanded leaves, lower surface: Close to 146B; venation, close to 144C.Petioles.—Length: About 1 cm to 2 cm. Diameter: About 2 mm to 3 mm. Strength: Strong. Texture and luster, upper and lower surfaces: Smooth, glabrous; glossy. Color, upper surface: Close to 144A. Color, lower surface: Close to 144C.Flower description:Flower type and flowering habit.—Single salverform flowers arranged in axillary racemes; flowers star-shaped and face upright to mostly outwardly; freely flowering habit with about five to six flowers per inflorescence and during the flowering season, about 60 flowers per plant at one time.Natural flowering season.—Plants flower continuously from the late spring until the late summer in The Netherlands; early flowering habit, plants begin flowering about seven months after planting.Flower longevity on the plant.—About eight to ten days; flowers not persistent.Fragrance.—None detected.Inflorescence height.—About 10 cm to 15 cm.Inflorescence diameter.—About 10 cm to 15 cm.Flower buds.—Length: About 7 cm. Diameter: About 1.2 cm. Shape: Elongated, spindle-shaped. Texture and luster: Smooth, glabrous; semi-glossy. Color: Distally, close to N57D and proximally, close to 144D.Flowers.—Appearance: Flared trumpet, corolla fused and five-parted. Diameter: Relatively large, about 6 cm. Length: About 6 cm. Throat diameter: About 5 mm to 20 mm. Tube length: About 6 cm. Tube diameter: About 5 mm to 20 mm.Corolla.—Quantity and arrangement: Five petals arranged in a single whorl; proximal portion of the petals are fused into a tube; distal free portions imbricate. Petal length: About 5 cm. Petal width: About 4 cm. Petal shape and appearance: Ovate to triangular, asymmetrical. Petal apex: Acute to cuspidate. Petal margin: Entire; slightly undulate. Petal texture and luster, upper and lower surfaces: Smooth, glabrous; semi-glossy. Throat and tube texture: Smooth, glabrous; semi-glossy. Color: Petals, when opening, upper and lower surfaces: Close to N57B. Petal, fully opened, upper surface: Close to N57C; towards the throat, close to NN155D; venation, close to N57C; color does not change with subsequent development. Petal, fully opened, lower surface: Close to N57D; venation, close to N57D; color does not change with subsequent development. Throat: Close to 14A; venation, close to 14A. Tube: Close to 145C; venation, close to 145C.Calyx.—Quantity and arrangement: Five sepals arranged in a single whorl; calyx, star-shaped. Length: About 1 cm. Diameter: About 6 mm. Sepal length: About 1 cm. Sepal width: About 2 mm. Sepal shape: Subulate. Sepal apex: Acute. Sepal margin: Entire. Sepal texture and luster, upper and lower surfaces: Smooth, glabrous; semi-glossy. Sepal color: When opening, upper and lower surfaces: Close to 145A. Fully opened, upper and lower surfaces: Close to 145A.Peduncles.—Length: About 3 cm to 4 cm. Diameter: About 2 mm to 3 mm. Strength: Strong. Aspect: Mostly upright. Texture and luster: Smooth, glabrous; glossy. Color: Close to 145A.Pedicels.—Length: About 5 mm to 10 mm. Diameter: About 2 mm to 3 mm. Strength: Strong. Aspect: Upright to about 30 degrees from peduncle axis. Texture and luster: Smooth, glabrous; glossy. Color: Close to 145A.Reproductive organs.—Stamens: Quantity and arrangement: Typically five; basifixed; anthers connate. Filament color: Close to 12D. Anther size: About 6 mm by 8 mm. Anther shape: Elongate. Anther color: Close to 12D. Pollen amount: Moderate. Pollen color: Close to 12D. Pistils: Quantity: Typically one. Pistil length: About 1 cm to 1.5 cm. Style color: Close to 150B. Stigma diameter: About 2 mm. Stigma shape: Club-shaped. Stigma color: Close to 150D. Ovary color: Close to 150B.Seeds.—Quantity per flower: About 50 to 100. Length: About 5 mm to 10 mm. Diameter: About 1 mm to 2 mm. Color: Close to 200B.Pathogen & pest resistance: To date, plants of the newMandevillahave not been noted to be resistant to pathogens and pests common toMandevillaplants.Temperature tolerance: Plants of the newMandevillahave been observed to tolerate temperatures ranging from about 1C to about 45C. | 7,210 |
PP35609 | The photographs were taken using conventional techniques and although colors may appear different from actual colors due to light reflectance it is as accurate as possible by conventional photographic techniques. DETAILED BOTANICAL DESCRIPTION In the following description, color references are made to The Royal Horticultural Society Colour Chart 2015 except where general terms of ordinary dictionary significance are used. The following observations and measurements describe ‘FARROWCJFRF’ plants grown in a poly-greenhouse in Grand Haven, Michigan in the fall of 2021. Plants are approximately 2 to 3 years old, in 3-gallon containers. The average day time temperature is 18-27° C., average night temperature is 5-10° C. Measurements and numerical values represent averages of typical plant types.Botanical classification:Camellia oleiferaxsasanqua‘FARROWCJFRF’. PROPAGATION Method: Hardwood cuttings.Time to rooting: 4 weeks at 18-27° C.Root description: Moderately dense, freely branching, thin, and fibrous. Light brown to tannish-white in color, not accurately measured by the color chart. PLANT Plant type: Evergreen flowering shrub.Plant shape: Upright, somewhat mounded.Growth habit: Upwards and outwards.Height: 60 cm.Plant spread: 55 cm.Growth rate: Moderate.Plant vigor: Good.Branching characteristics:Lateral branches.—Branching Habit: Basal. Quantity: 25 to 30. Length: 35 cm. Diameter. 3 mm.Stem.—Shape: Rounded. Aspect. 70° to 90°. Strength: Strong, quite rigid. Pubescence: Some, on new growth only. Color: New Growth: RHS Greyed-Orange 176A. Old Growth: RHS Grey-Brown 199A-B.Internode.—3 cm. FOLIAGE Leaf:Type.—Single.Arrangement.—Alternate.Length.—6 cm.Width.—3.5 cm.Shape.—Elliptic.Apex.—Acute.Base.—Obtuse.Margin.—Serrulate.Texture of top surface.—Smooth, very glossy.Texture of bottom surface.—Smooth, glossy.Density.—Moderate to dense.Color.—Young foliage upper side: Near RHS Purple N77A. Young foliage under side: Near RHS Brown 200B. Mature foliage upper side: RHS Green NN137A. Mature foliage under side: RHS Yellow-Green 147B.Venation.—Type: Pinnate. Venation color upper side: RHS Yellow-Green 147B. Venation color under side: RHS Yellow-Green 147B.Petiole:Length.—5 mm.Diameter.—2 mm.Texture.—Somewhat pubescent, soft.Color.—RHS Yellow-Green 147B. FLOWER Bloom period: Fall.Flowers:Arrangement.—Single or paired flowers at leaf nodes along length of lateral branches.Shape.—Single whorl.Aspect.—Outwards from lateral stem.Quantity of flowers per lateral stem.—3 to 5.Quantity of buds per lateral stem.—3 to 5.Length.—6 cm.Diameter.—6 cm.Depth.—2 cm.Persistent or self-cleaning.—Self-cleaning.Fragrance.—Mildly sweet, spice-like.Petals:Length.—3 cm.Width.—2.5 cm.Apex.—Retuse.Shape.—Elliptic to obovate.Margin.—Entire.Margin undulation.—Weak.Arrangement.—Single whorl.Number.—6 to 8.Fused.—No.Appearance.—Smooth.Texture.—Smooth, soft.Color.—Upper surface at first opening: RHS Red-Purple 69A, fading to 73C at very base. Under surface at first opening: RHS Red-Purple 69A, fading to 73C at very base. Upper surface at maturity: RHS Red-Purple 69A, fading to 73C at very base. Under surface at maturity: RHS Red-Purple 69A, fading to 73C at very base.Petaloids: Absent.Bud:Shape.—Ovoid.Length.—1 cm.Diameter.—0.75 cm.Color.—RHS Yellow-Green 146C.Sepals:Length.—1.8 cm.Width.—1.3 cm.Shape.—Obovate.Number.—5 to 7.Color.—Outer surface: RHS Yellow-Green N144B. Inner surface: RHS Yellow-Green 146D.Peduncle:Length.—5 mm.Diameter.—3 mm.Color.—RHS Yellow-Green 146C.Texture.—Glabrous.Aspect.—45°.Strength.—Good. REPRODUCTIVE ORGANS Stamens:Number.—Average 100.Arrangement.—Apricot.Filament length.—1 cm.Filament color.—RHS Yellow 8C.Anthers.—Length: 2 mm. Color: RHS Yellow 8C. Pollen: Quantity: Sparse to none. Color: RHS Yellow 8C. Shape: Club-like.Pistil:Number.—1.Length.—1 cm.Style.—Length: 0.75 cm. Color: RHS Yellow-Green 145D.Stigma.—Shape: Forked. Color: RHS Yellow-Green 145D. OTHER CHARACTERISTICS Disease and pest resistance: Observed resistance toCamelliarelated leaf diseases powdery mildew and black spot. The exact pathogens are unknown. Neither resistance nor susceptibility to normal pests ofCamelliaobserved.Temperature tolerance: Typical, USDA zones 7-9.Fruit/seed: Not observed. | 4,239 |
PP35610 | The colors in the photographs may differ slightly from the color values cited in the detailed botanical description, which accurately describe the colors of the newIlex. DETAILED BOTANICAL DESCRIPTION The following is a detailed description of one-year-old plants of the new cultivar grown outdoors in 19-cm containers in Hazerswoude-Dorp, The Netherlands. The phenotype of the new cultivar may vary with variations in environmental, climatic, and cultural conditions, as it has not been tested under all possible environmental conditions. The color determination is in accordance with The 2015 Colour Chart of The Royal Horticultural Society, London, England, except where general color terms of ordinary dictionary significance are used.General description:Blooming period.—May into June in The Netherlands.Plant type.—Evergreen, perennial shrub.Plant habit.—Compact, semi-upright.Height and spread.—Reaches an average of 30 cm in height and width as a one-year-old plant in a 19-cm container, reaches an average of 80 cm in height and 45 cm in width when grown in the landscape without pruning.Cold hardiness.—At least to U.S.D.A Zone 7a.Diseases and pests.—No susceptibility to diseases or pests has been observed.Root description.—Densely fibrous and 165C in color.Propagation.—Softwood stem cuttings.Root development.—An average of 4 weeks for root initiation and 12 months to produce a rooted plant in a 19-cm container in Portugal.Growth rate.—High, an average of 10 weeks earlier than is typical of the species.Branch description:Branching.—Densely branching; 3 main branches each with an average of 21 lateral branches.Stem size.—Main stems; 2.7 cm in length, 8 mm in diameter, lateral branches; 4 mm in diameter, 18 cm in length.Stem surface.—Slightly glossy, older stems covered with smooth bark.Stem shape.—Rounded.Stem aspect.—An average of 55° (90° is vertical).Stem strength.—Strong.Stem color.—Young stems; N77A, mature stems; 146B, older stems; 199C.Internode length.—Average of 5 mm.Foliage description:Leaf shape.—Elliptic.Leaf division.—Simple.Leaf base.—Acute.Leaf apex.—Obtuse.Leaf venation.—Pinnate, both surfaces 144B.Leaf margins.—Entire.Leaf arrangement.—Alternate.Leaf aspect.—Flat.Leaf attachment.—Petiolate.Leaf surface.—Both surfaces glossy and smooth.Leaf size.—Average of 2.2 cm in length and 1 cm in width.Leaf quantity.—Average of 50 per lateral branch.Leaf color.—Young leaves upper surface 144B, young leaves lower surface 144C, mature upper surface 137A, mature lower surface 146C.Petioles.—Average of 4 mm in length and 1 mm in diameter, strong, smooth and glabrous surface, color; upper surface 144B with 199A, lower surface 199A, base 77A.Flower description:Inflorescence type.—Cymes of campanulate-shaped flowers on axillary nodes of lateral branches.Lastingness of inflorescence.—About 2 weeks, self-cleaning.Inflorescence size.—An average of 7 mm in height and diameter.Flower fragrance.—None.Flower number.—3 to 4 per inflorescence.Flower aspect.—Rotate, cup-shaped.Flower bud.—Round-oblong in shape, an average of 1 mm in length and width, color; a blend of N155A and 144C, base 144D.Flower form.—Campanulate.Flower size.—An average of 4 mm in width and 1 mm in depth.Petal.—An average of 4, rotate, ovate in shape, an average of 2 mm in length, 3 mm in width, obtuse apex, rounded base, entire margin, color upper and lower surface N155A, smooth and glabrous on upper and lower surfaces.Sepals.—An average of 4, ovate in shape, an average of 0.7 mm in length and width, broadly acute apex, fused based, entire margin, color upper and lower surfaces 144C, smooth and glabrous on upper and lower surfaces.Peduncles.—Oval in shape, an average of 3 mm in length and 0.5 mm in width, moderately strong, 144C in color, smooth and glabrous surface.Pedicels.—Oval in shape, an average of 4 mm in length and 0.3 mm in width, moderately strong, 144C in color, smooth and glabrous surface.Reproductive organs:Gynoecium.—Not present, male flowers only.Androecium.—4 stamens, anthers; oblong in shape, 3 mm in length, 0.2 mm in width, 1D in color, filaments; an average of 1 mm in length and 1D in color, pollen is moderate and 1A in color.Seed and fruit.—Not produced as only male flowers are present. | 4,239 |
PP35611 | DETAILED BOTANICAL DESCRIPTION In the following description, color references are made to The Royal Horticultural Society Colour Chart 2007, except where general terms of ordinary dictionary significance are used. The following observations and measurements describe ‘COUHACINQ’ plants grown in a ploy-greenhouse in Vosges, France. The plants were about 2 to 3 years old. Temperatures ranged from 5° C. to 10° C. at night to 18° C. to 27° C. during the day. No artificial light, photoperiodic treatments were given to the plants. Measurements and numerical values represent averages of typical plant types.Botanical classification:Hydrangeaxpaniculata‘COUHACINQ’. PROPAGATION Typical method: Softwood cuttings.Root initiation: 20 days at 20° C. during summer.Time to produce rooted cutting: About 2 months at 20° C. during summer.Roots: Dense, freely branching, fibrous, thick to thin. Creamy white to brown in color, not accurately measured with R.H.S. chart. PLANT Growth habit: Upright, and somewhat outwards, compact.Height: 70 to 80 cm.Plant spread: 60 cm.Pot size of plant described: 2 gallon container.Age of plant described: Approximately 2 years.Growth rate: Good.Plant vigor: Moderately vigorous.Stem:Branching.—Basal.Number of lateral branches.—8.Shape.—Rounded.Color.—RHS Brown 200B with Grey-Brown 199C lenticels.Length.—50 cm.Width.—7 mm.Aspect.—60 to 70°.Strength.—Strong with some flexibility.Pubescence.—None.Internode length.—6 cm to 10 cm. FOLIAGE Leaf:Arrangement.—Whorl (3 leaves equally spaced around each node).Shape.—Broad elliptic.Length.—10 cm.Width.—5 cm.Apex.—Acuminate.Base.—Obtuse.Margin.—Serrulate.Texture of top surface.—Roughly textured with coarse, bristly hairs.Texture of bottom surface.—Roughly textured with coarse, bristly hairs and pronounced venation.Pubescence.—Yes, upper and lower surfaces.Color.—Young foliage upper side: RHS Green 136A. Young foliage under side: RHS Green 136B. Mature foliage upper side: RHS Green 139A Mature foliage, under side: RHS Green 137A.Venation:Type.—Pinnate.Color.—Upper side: RHS Green 139C. Under side: Green 139B.Petiole:Length.—4 cm.Width.—4 mm.Color.—RHS Brown 200B.Texture.—Lightly pubescent. INFLORESCENCE Natural flowering season: Summer.Inflorescence type: Mophead.Panicle:Shape.—Conical to globular.Height.—15 to 24 cm.Diameter.—12 to 18 cm.Fragrance: Faintly sweet.Sterile flowers:Flowers per inflorescence.—200 to 300.Aspect.—Outward.Shape.—Cruciform/stellate.Length.—2 cm.Diameter.—3 cm.Persistent or self-cleaning.—Persistent.Bud:Length.—3 mm.Diameter.—3 mm.Shape.—Obovate.Color.—RHS Yellow-Green 145C.Petals:Number per flower.—3 to 4.Shape.—Elliptic.Tip.—Acute.Base.—Truncate.Margin.—Entire.Length.—3 mm.Width.—2 mm.Texture.—Upper side: Smooth. Under side: Smooth.Color.—When Opening, Upper side: RHS Green 145D. When Opening, Under side: RHS Green 145D. Fully Opened, Upper side: RHS White N155A. Fully Opened, Under side: RHS White N155A.Sepal:Number per flower.—4 to 5.Shape.—Ovate.Tip.—Broad rounded.Base.—Truncate.Margin.—Entire.Length.—1.8 cm.Width.—8 mm.Texture.—Upper side: Smooth. Under side: Smooth.Color.—Earliest Stage, Upper side: RHS Green-White 157A. Earliest Stage, Under side: RHS Green-White 157A. Semi-mature, Upper side: RHS White 155A. Lightly tinged overall Yellow 4D, margin begins to be flushed Red-Purple 72C. Semi-mature, Under side: RHS White N155A. Lightly tinged overall Yellow 4D, margin begins to be flushed Red-Purple 70D. Mature, Upper side: RHS Yellow 4D heavily or completely flushed 61C. Mature, Under side: RHS Yellow 4D heavily flushed 61C. Mature before senescence Upper side: RHS Red 53C, veins Red-Purple 59C, base yellow 5D. Mature before senescence, Under side: RHS Red 53D, veins Red-Purple 59C, base yellow 4D.Pedicel:Length.—1.5 cm.Diameter.—2 mm.Angle.—45°.Strength.—Good, flexible.Texture.—Lightly pubescent.Color.—RHS Yellow 4D.Fertile flowers: Absent or highly reduced and inconspicuous. REPRODUCTIVE ORGANS Sterile flower:Stamens:Number.—About 8.Filament color.—RHS White 155A.Filament length.—3 mm.Anthers:Length.—1 mm.Shape.—Rounded.Color.—RHS Yellow-White 158A.Pollen.—Moderate.Pollen color.—RHS Yellow-White 158C.Pistil:Number.—1.Length.—1 mm.Stigma:Shape.—Bi-lobed.Color.—RHS Yellow-White 158A.Style length.—0.5 mm.Style color.—RHS Yellow-White 158C. OTHER CHARACTERISTICS Disease resistance: Neither resistance nor susceptibility to the normal diseases and pests ofHydrangeahas been observed.Drought tolerance and cold tolerance: The new cultivar can tolerate cold temperatures to approximately −31° C. and tolerates an upper temperature range to at least 38° C.Fruit/seed production: Not observed to date. | 4,666 |
PP35612 | DETAILED BOTANICAL DESCRIPTION In the following description, color references are made to The Royal Horticultural Society Colour Chart 2015, except where general terms of ordinary dictionary significance are used. The following observations and measurements describe ‘WNHYDFBWMH’ plants grown outdoors in Grand Haven, Michigan. The plants were about 2 to 3 years old. Temperatures ranged from 5° C. to 10° C. at night to 18° C. to 27° C. during the day. No artificial light, photoperiodic treatments were given to the plants. Measurements and numerical values represent averages of typical plant types.Botanical classification:Hydrangeahybrid ‘WNHYDFBWMH’. PROPAGATION Typical method: Terminal cuttings.Root initiation: 5 to 7 days in the summer.Time to produce rooted cutting: 28 days in the summer.Roots: Thin to medium, freely branching, fibrous, moderately dense. Beige to tan in color, not accurately measured with RHS chart. PLANT Growth habit: Upwards and outwards in a drooping manner.Shape: Trailing.Height: 25 cm.Plant spread: 55 cm.Pot size of plant described: #3 container.Age of plant described: Approximately 2 to 3 years.Growth rate: Good.Plant vigor: Quite vigorous.Stem:Branching.—Basal.Number of lateral branches.—20 to 30.Shape.—Rounded.Color.—Immature: RHS Yellow-Green 145A. Mature: RHS Yellow-Green 145A.Length.—30 cm.Width.—4 mm.Aspect.—0 to 45°.Strength.—Good.Pubescence.—None.Internode length.—4 cm. FOLIAGE Leaf:Arrangement.—Opposite.Shape.—Narrowly elliptic.Length.—9 cm.Width.—3.5 cm.Apex.—Acuminate.Base.—Cuneate.Margin.—Serrulate.Texture of top surface.—Smooth, glabrous.Texture of bottom surface.—Glabrous with pronounced venation.Pubescence.—None.Color.—Young Foliage Upper Side: RHS Yellow-Green 144A. Young Foliage Under Side: Near RHS Yellow-Green 146D. Mature Foliage Upper Side: RHS Yellow-Green 147A. Mature Foliage, Under Side: RHS Yellow-Green 147B.Venation:Type.—Pinnate.Color.—Mature, Upper Side: RHS Yellow-Green 145A. Mature, Under Side: RHS Yellow-Green 145A.Petiole:Length.—5 mm.Width.—2 mm.Color.—Upper Side: RHS Yellow-Green 145A, with Greyed-Orange 173D tint. Under Side: RHS Yellow-Green 145A, with Greyed-Orange 173D tint.Texture.—Upper Side: Glabrous. Under Side: Glabrous. INFLORESCENCE Natural flowering season: May to July.Inflorescence type: Mophead.Panicle:Shape.—Globular, with a flat base; umbel.Height.—12 cm.Diameter.—15 cm.Fragrance: None.Sterile flowers:Flowers per inflorescence.—50 to 75.Aspect.—Upright and outward.Shape.—Single whorl.Length.—5 cm.Diameter.—5 cm.Depth.—1 mm.Persistence.—Persistent.Bud:Length.—3 mm.Diameter.—2 mm.Shape.—Obovate.Color.—RHS Yellow-Green 144D.Petals:Number per flower.—4.Arrangement.—Cruciform.Shape.—Elliptic.Tip.—Acute.Base.—Flattened.Margin.—Entire.Length.—3 mm.Width.—2 mm.Texture.—Upper side: Glabrous. Under side: Glabrous.Color.—When Opening, Upper Side: RHS Yellow-Green 144B-C. When Opening, Under Side: RHS Yellow-Green 144B-C. Fully Opened, Upper Side: RHS White NN155B. Fully Opened, Under Side: RHS White NN155B.Sepal:Number.—4 to 5.Arrangement.—Single whorl.Shape.—Elliptic to globose.Tip.—Obtuse, sometimes slightly retuse.Base.—Slightly attenuate.Margin.—Entire.Length.—2.5 cm.Width.—2.25 cm.Texture.—Upper side: Soft and silky. Under side: Soft and silky.Color.—When Opening, Upper Side: RHS Yellow-Green 144B and 144C. When Opening, Under Side: RHS Yellow-Green 144B and 144C. Fully Opened, Upper Side: RHS Yellow-Green 144B and 144C. Fully Opened, Under Side: RHS Yellow-Green 144B and 144C. Fading, Upper Side: RHS White NN155B with occasional streaks or mottling of Yellow-Green 144C along sepal length. Fading, Under Side: RHS White NN155B with occasional streaks or mottling of Yellow-Green 144C along sepal length.Pedicel:Length.—2 cm.Diameter.—2 mm.Angle.—45° relative to stem.Strength.—Good, somewhat flexible.Texture.—Slightly pubescent.Color.—RHS White NN155B with Greyed-Red 181C developing near base (about last 2mm).Fertile flowers:Flowers per inflorescence.—About 50.Aspect.—Upright.Shape.—Round, single whorl of petals with irregularly shaped sepals.Length.—1.5 cm.Diameter.—1 cm.Depth.—0.5 cm.Persistence.—Self-cleaning.Bud:Length.—4 mm.Bud diameter.—3 mm.Bud shape.—Obovate.Bud color.—RHS Yellow-Green 144D.Petals:Number per flower.—5.Arrangement.—Stellate.Shape.—Elliptic.Tip.—Acute.Base.—Flattened.Margin.—Entire.Length.—4 mm.Width.—3 mm.Texture.—Upper Side: Soft and silky. Under Side: Soft and silky.Color.—When Opening, Upper Side: RHS Yellow-Green 144B-C. When Opening, Under Side: RHS Yellow-Green 144B-C. Fully Opened, Upper Side: RHS White NN155B. Fully Opened, Under Side: RHS White NN155B.Sepal:Number.—4.Arrangement.—Cruciform.Shape.—Expanded and irregularly shaped, crescent shaped.Tip.—Obtuse.Base.—Attenuate.Margin.—Entire.Length.—Unexpanded.—3 mm. Expanded.—1 to 2 cm.Width.—2.25 cm.Texture.—Upper Side: Smooth and silky. Under Side: Smooth and silky.Color.—When Opening, Upper Side: RHS Yellow-Green 144B and 144C. When Opening, Under Side: RHS Yellow-Green 144B and 144C. Fully Opened, Upper Side: RHS Yellow-Green 144B and 144C. Fully Opened, Under Side: RHS Yellow-Green 144B and 144C. Fading, Upper Side: RHS White NN155B with occasional streaks or mottling of Yellow-Green 144C along sepal length. Fading, Under Side: RHS White NN155B with occasional streaks or mottling of Yellow-Green 144C along sepal length.Pedicel:Length.—5 mm.Diameter.—1 mm.Angle.—90° relative to stem.Strength.—Good, somewhat flexible.Texture.—Slightly pubescent.Color.—White 155D flushed Yellow-Green 144C. REPRODUCTIVE ORGANS Sterile flower:Pistil:Number.—1.Length.—3 mm.Stigma:Shape.—2-lobed, fused.Color.—RHS Yellow-Green 145B.Style length.—Less than 1 mm.Style color.—RHS Yellow-Green 145B.Fertile flower:Stamens:Number.—10.Filament length.—5 mm.Filament color.—RHS White NN155B.Anthers:Shape.—Oblong.Length.—1 mm.Color.—RHS Yellow-Green 145B.Pollen Amount.—Sparse.Pistil:Number.—1.Length.—3 mm.Stigma:Shape.—3-lobed, fused.Color.—RHS Yellow-Green 145B.Style length.—Less than 1 mm.Style color.—RHS Yellow-Green 145B. OTHER CHARACTERISTICS Disease resistance: Neither resistance nor susceptibility to the normal diseases and pests ofHydrangeahas been observed.Drought tolerance and cold tolerance: The new cultivar can tolerate cold temperatures to approximately −31° C. and tolerates an upper temperature range to at least 38° C.Fruit/seed production: Not observed to date. | 6,421 |
PP35613 | BOTANICAL DESCRIPTION OF THE PLANT The following is a detailed description of plants two years in age as grown outdoors in 2-gallon containers in Cottage Grove, Minnesota and in a garden in River Falls, Wisconsin with the capsule description taken from a 6-year-old plant that was field grown in Cottage Grove, Minnesota. The phenotype of the new cultivar may vary with variations in environmental, climatic, and cultural conditions, as it has not been tested under all possible environmental conditions. The color determination is in accordance with the 2015 Colour Chart of The Royal Horticultural Society, London, England, except where general color terms of ordinary dictionary significance are used.General description:Blooming period.—From mid-June through mid-July for main flush with some continued flowering possible to fall in Minnesota.Plant type.—Perennial shrub with mophead-like flowerheads.Plant habit.—Sturdy and straight stems, rounded, compact in shape.Height and spread.—Reaches 86 cm in height and 1 m in spread as a 4-year-old plant in the landscape.Cold hardiness.—At least to U.S.D.A. Zone 4.Diseases and pests.—Resistance to bacterial leaf spot caused byXanthomonas campestris.Root description.—Fibrous.Time required for root development.—2 weeks for root initiation, 6 weeks to produce a fully rooted plug.Growth rate.—Vigorous.Stem description:Stem shape.—Rounded.Stem strength.—Strong, do not lodge.Stem aspect.—Upright to slightly outward.Stem color.—Young; 142A, heavily flushed with 183A, mature and older bark; 142B with vertical striations of 183A.Stem size.—An average of 50 cm (excluding the inflorescence) in length and 5 mm in diameter.Stem surface.—Young; both surfaces dull and densely tomentose with soft matted hairs, slightly translucent and 196B, too small to measure size, mature; glabrous and slightly glossy.Branching.—Freely branched with an average of 35 lateral branches.Internode length.—An average of 8 cm.Foliage description:Leaf shape.—Ovate to broadly ovate.Leaf arrangement.—Opposite.Leaf division.—Simple.Leaf number.—An average of 12 per lateral branch.Leaf base.—Cordate.Leaf apex.—Apiculate.Leaf margins.—Dentate to serrate.Leaf venation.—Pinnate, upper surface slightly translucent and 149A in color, lower surface 138C, densely tomentose with soft matted hairs that match leaf surface and too small to measure size.Leaf size.—An average of 7 cm in length, 6 cm in width.Leaf attachment.—Petiolate.Leaf surface.—Upper surface; dull and slightly rugose, lower surface; moderately rugose, upper surface moderately covered with short stiff hairs, 0.3 mm in length, NN155D in color, lower surface densely tomentose with soft matted hairs that match leaf surface and too small to measure size.Leaf color.—Young and mature; upper surface 143A, slightly flushed with 141A, lower surface 138C.Petioles.—An average of 4 cm in length and 3 mm in diameter, 142A, heavily flushed with 183A, both surfaces dull and densely tomentose with soft matted hairs, slightly translucent and 196B, too small to measure size.Inflorescence description:Inflorescence type.—Round, flattened, mophead, compound corymb of rotate-shaped sterile flowers over fertile flowers.Lastingness of inflorescence.—Sterile and fertile flowers; an average of 4 weeks, sterile flowers persistent, fertile flowers self-cleaning.Inflorescence number.—One per lateral stem.Inflorescence size.—An average of 5 cm in depth and 15 cm in diameter.Flower number.—An average of 500 sterile flowers and 250 fertile flower buds per inflorescence.Flower fragrance.—Light, sweet scent.Flower aspect.—Sterile flowers; upright, outwards and slightly drooping, fertile flowers; upright.Flower size.—Sterile flowers; an average of 1.3 cm in diameter and 4 mm in depth, fertile flowers; an average of 1.0 cm in diameter and 5 mm in depth.Flower shape.—Sterile flowers; rotate, fertile flowers; rotate.Flower buds.—Sterile flowers; 2.3 mm in diameter, 2 mm in depth, rounded and flattened, color; young 149A, mature 157D, fertile flowers; 2 mm in diameter and depth, rounded in shape, color; young 150B, mature 157D.Peduncles.—An average of 3 cm in length and 3 mm in diameter, held upright, moderately strong, 142A, heavily flushed with 183A, both surfaces dull and densely tomentose with soft matted hairs, slightly translucent and 196B, too small to measure size.Pedicels.—Sterile and fertile flowers; average of 10 to 12 mm in length, 1 mm in diameter and 2 to 6 mm in length and 0.5 mm in diameter, respectively, pedicels of both kinds of flowers are moderately strong, held in multiple angles outwards from vertical, 142C in color, dull surface that is densely tomentose with soft matted hairs matching surface color.Petals.—Sterile flowers; 3 to 4, elliptic in shape, acute margins, cuneate base, concave in aspect, 0.5 mm in length, 0.3 mm in width, color; young 150B, mature 157D, fertile flowers; 5, elliptic in shape, acute margins, cuneate base, concave in aspect, 2 mm in length, 1 mm in width, color; young 150B, mature 157D.Sepals.—Sterile flowers; an average of 3 to 4, rotate in arrangement, ovate in shape, very slightly concave, very short apiculate apex, cuneate base, entire margin, an average of 7 mm in length and 6 mm in width, color; upper and lower surface when opening 149A, upper and lower surface when fully open 157D, both surfaces; glabrous, smooth, velvety, fertile flowers; rotate in arrangement, angled upward, flat, deltoid in shape, truncate base, acute apex, entire margin, an average of 1 mm in length and 1 mm in width, color: upper and lower surface when opening 142C and mature also 142C on both surfaces.Reproductive organs:Gynoecium.—Sterile; none observed, fertile flowers; perigynous, compound pistil with two or rarely three carpels per flower, an average of 2.5 mm in length, stigmas separate and are club shaped 1.0 mm in length and 0.5 mm in diameter and are angled outward from each other, 155C in color, style 0.5 mm in length and 0.5 mm in diameter, 155C in color, ovary globular and 1.5 mm in length and width, color 154D.Androecium.—Sterile; typically none observed, but periodically 3-5 stamens, filaments 3 to 4 mm in length and 0.3 mm in diameter, color 155C, anthers 0.5 mm in length and width, color 160C, pollen sparce, color NN155B, fertile flowers; 10 stamens, filaments 3 to 5 mm in length and 0.3 mm in diameter, color 155C, anthers 0.5 mm in length and width, color 160C, pollen moderate, color NN155B.Fruit and seed.—Capsules; generally globular in shape with persistent sepals and stigmas, 2 to 3 mm in length and width, color at maturity 165A, seeds; abundant and small, 1 mm in length and 0.15 mm in width, color, 164A. | 6,686 |
PP35614 | DETAILED BOTANICAL DESCRIPTION Plants used for the aforementioned photographs and following description were grown in ground beds and in 15-cm containers during the summer in a outdoor nursery in Rijswijk, The Netherlands and under cultural practices typical of commercialVeronicaproduction. During the production of the plants, day temperatures ranged from 15° C. to 30° C. and night temperatures ranged from 6° C. to 18° C. Plants were four months old when the photographs and the description were taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, 2015 Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:Veronica longifoliaXVeronica spicata‘Allvbaby’.Parentage:Female, or seed, parent.—Veronica longifoliaXVeronica spicata‘Allvglove’, disclosed as U.S. Plant Pat. No. 28,798.Male, or pollen, parent.—Unknown selection ofVeronica longifoliaXVeronica spicata, not patented.Propagation:Type cutting.—Terminal stein cuttings.Time to initiate roots, summer.—About 7 to 14 days at temperatures ranging from 12° C. to 30° C.Time to produce a rooted young plant, summer.—About 28 to 32 days at temperatures ranging from 12° C. to 30° C.Root description.—Fine, fleshy; typically white in color, actual color of the roots is dependent on substrate composition, water quality, fertilizer type and formulation, substrate temperature and physiological age of roots.Rooting habit.—Freely branching; dense.Plant description:Plant type.—Herbaceous perennial.Plant and growth habit.—Relatively compact and broadly upright plant habit with dense inflorescences; overall plant shape, broadly ovate; moderately vigorous growth habit and low to moderate growth rate.Plant height, soil level to top of foliar plane.—About 23.8 cm.Plant height, soil level to top of floral plane.—About 33.7 cm.Plant width.—About 28.7 cm.Lateral branch description.—Branching habit: Freely branching habit with about ten basal stems, each with about six secondary branches; pinching will enhance lateral branching. Length (excluding inflorescence): About 12.6 cm. Diameter: About 1.5 mm. Internode length: About 3.7 cm. Strength: Strong. Aspect: Erect to about 50° from vertical. Texture and luster: Densely pubescent; slightly glossy. Color, developing: Close to 145B. Color, developed: Close to 146D.Leaf description:Arrangement.—Opposite or in whorls of three, simple.Length.—About 4.2 cm.Width.—About 2.1 cm.Shape.—Narrowly ovate; slightly carinate.Apex.—Broadly acute.Base.—Truncate to short attenuate.Margin.—Crenate to serrate; not lobed.Texture and luster, upper surface.—Moderately pubescent; not rugose; slightly glossy.Texture and luster, lower surface.—Sparsely pubescent with exception of midvein which is densely pubescent; not rugose; slightly glossy.Venation pattern.—Pinnate.Color.—Developing leaves, upper surface: Close to 143A. Developing leaves, lower surface: Close to 146B. Fully expanded leaves, upper surface: Slightly darker than between 137B and 143A; venation, close to 144B. Fully expanded leaves, lower surface: Close to 147B; venation, close to 146D.Petioles.—Length: About 8 mm. Diameter: About 1 mm by 1.5 mm. Strength: Strong. Texture and luster, upper surface: Moderately pubescent; moderately glossy. Texture and luster, lower surface: Moderately pubescent; slightly glossy. Color, upper surface: Close to 144A. Color, lower surface: Close to 144B; margins, close to 143B.Flower description:Flower arrangement and shape.—Single campanulate flowers arranged on dense terminal racemes; flowers face mostly outwardly.Flowering habit.—Freely flowering habit with about 275 flowers developing per inflorescence and about 3,850 flowers developing per plant during the flowering season.Fragrance.—None detected.Natural flowering season.—Long flowering period; plants flower continuously from the summer until the autumn in The Netherlands; plants begin flowering about 13 weeks after planting.Flower longevity.—Individual flowers last about seven days and inflorescences last about 20 days on the plant; flowers not persistent.Flower buds.—Length: About 5 mm. Diameter: About 2 mm. Shape: Narrowly ovate. Texture and luster: Smooth, glabrous; matte. Color: Close to N82A; developing calyx, close to 138B.Inflorescence height(length).—About 9.2 cm.Inflorescence diameter.—About 2.3 cm.Flower diameter.—About 7 mm by 8 mm.Flower height.—About 9 mm.Throat diameter.—About 3 mm.Tube length.—About 3 mm.Tube diameter.—About 3 mm.Petals.—Quantity and arrangement: Four in a single whorl; upper and lateral petals broader than the lower petal; petals fused about 50% of the petal length from the base. Length, all petals: About 6 mm. Width, upper and lateral petals: About 3 mm. Width, lower petal: About 2 mm. Shape, upper and lateral petals: Obovate; slightly concave. Shape, lower petal: Oblong; slightly concave. Apex, all petals: Obtuse. Margin, all petals: Entire; not undulate. Texture and luster, all petals, upper and lower surfaces: Smooth, glabrous; matte. Texture and luster, throat: Smooth, glabrous; matte. Texture and luster, tube: Densely pubescent; matte. Color, all petals: When opening, upper surface: Close to N88B. When opening, lower surface: Close to N82A. Fully opened, upper surface: Close to 86B; venation, close to 86B; color does not change with subsequent development. Fully opened, lower surface: Close to N87A; venation, close to N87A; color does not change with subsequent development. Throat: Close to 86B; venation, close to 86B. Tube: Close to N88C; venation, close to 86B.Sepals.—Quantity and arrangement: Four arranged in a single whorl and fused at the base. Length: About 2 mm to 2.5 mm. Width: About 1 mm to 1.25 mm. Shape: Ovate to narrowly ovate. Apex: Acute. Base: Broadly cuneate, fused. Margin: Entire. Texture and luster, upper and lower surfaces: Smooth, glabrous; matte. Color: When opening, upper and lower surfaces: Close to 138B. Fully opened, upper and lower surfaces: Close to 138B.Peduncles.—Length: Primary peduncles, about 8.9 cm; secondary peduncles, about 5.8 cm. Diameter: About 2 mm. Aspect: Upright; secondary peduncles, about 20° from main peduncle axis. Strength: Strong. Texture and luster: Densely pubescent; slightly glossy. Color: Close to 144B.Pedicels.—Length: About 1.25 mm. Diameter: About 0.5 mm. Aspect: About 60° from peduncle axis. Strength: Moderately strong; flexible. Texture and luster: Densely pubescent; slightly glossy. Color: Close to 177B.Flower bracts.—None observed.Reproductive organs.—Stamens: Quantity per flower: Two. Filament length: About 5.5 mm. Filament color: Close to 86B. Anther size: About 0.75 mm by 2 mm. Anther shape: Oblong; dorsifixed. Anther color: Close to N77B. Pollen amount: Moderate. Pollen color: Close to 156A. Pistils: Quantity per flower: One. Pistil length: About 7 mm. Stigma diameter: About 2 mm. Stigma shape: Club-shaped. Stigma color: Close to N92A. Style length: About 6.75 mm. Style color: Close to N88A; towards the proximal end, close to N88C. Ovary color: Close to 145B.Seeds and fruits.—To date, seed and fruit development has not been observed on plants of the newVeronica.Pathogen & pest resistance: To date, plants of the newVeronicahave not been noted to be resistant to pathogens and pests common toVeronicaplants.Garden performance: Plants of the newVeronicahave exhibited good garden performance and to be tolerant to rain, wind, temperatures ranging from about −29° C. to about 35° C. and to be suitable for USDA Hardiness Zones 4 through 9. | 7,576 |
PP35615 | DETAILED BOTANICAL DESCRIPTION Plants used for the aforementioned photograph and following description were grown in 13-cm containers during the summer and early autumn in a glass-covered greenhouse in Wieringerwerf, The Netherlands and under cultural practices typical of commercialHebeproduction. During the production of the plants, day temperatures ranged from 16C to 20C and night temperatures ranged from 12C to 16C. Plants were pinched one time about one month after planting and were five months old when the photograph and the description were taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, 2015 Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:HebeComm. ex. Juss. ‘HOP104’.Parentage:Female, or seed, parent.—Proprietary selection ofHebeComm. ex. Juss. identified as code number 146A, not patented.Male, or pollen, parent.—Proprietary selection ofHebeComm. ex. Juss. identified as code number 212, not patented.Propagation:Type cutting.—Terminal stern cuttings.Time to initiate roots, summer.—About ten days at temperatures about 18C.Time to initiate roots, winter.—About 14 days at temperatures about 20C.Time to produce a rooted young plant, summer.—About 40 days at temperatures about 18C.Time to produce a rooted young plant, winter.—About 50 days at temperatures about 20C.Root description.—Medium in thickness, fleshy; typically white to brown in color, actual color of the roots is dependent on substrate composition, water quality, fertilizer type and formulation, substrate temperature and physiological age of roots.Rooting habit.—Moderately freely branching; medium density.Plant description:Plant type.—Evergreen perennial shrub.Plant and growth habit.—Compact and upright to outwardly spreading and uniformily mounding plant habit; vigorous growth habit and moderate to rapid growth rate.Plant height, soil level to top of foliar plane.—About 23.3 cm.Plant height, soil level to top of floral plane.—About 24.1 cm.Plant width.—About 36.7 cm.Lateral branch description.—Branching habit: Freely branching habit with about eight primary branches, each with about nine secondary branches; pinching enhances lateral branching potential. Length (excluding inflorescence): About 9.8 cm. Diameter: About 3 mm. Internode length: About 1.7 cm. Strength: Strong. Aspect: Erect to about 60 degrees from vertical. Texture and luster: Mostly smooth and glabrous; at the internodes, moderately pubescent; slightly glossy. Color, developing: Close to 144B. Color, developed: Close to 146C; at the internodes, close to 176A.Leaf description:Arrangement.—Opposite, simple.Length.—About 5.5 cm.Width.—About 2 cm.Shape.—Elliptic to oblong; occasionally, slightly obovate.Apex.—Apiculate with a bluntly acute tip to bluntly acute.Base.—Cuneate.Margin.—Entire; slightly revolute and slightly and coarsely undulate; not lobed.Texture and luster, upper surface.—Smooth, glabrous; not rugose; moderately glossy.Texture and luster, lower surface.—Smooth, glabrous; not rugose; slightly glossy.Venation pattern.—Pinnate.Color.—Developing leaves, upper surface: Close to NN137B. Developing leaves, lower surface: Close to 138B; towards the margins, slightly tinged with close to 176B; midvein, close to 148B. Fully expanded leaves, upper surface: Slightly darker than 147A; venation, close to 147B. Fully expanded leaves, lower surface: Close 147B; venation, close to a blend of 147B and 147C.Petioles.—Length: About 2 mm. Diameter: About 2 mm by 4.5 mm. Strength: Strong. Texture and luster, upper and lower surfaces: Smooth, glabrous; slightly glossy. Color, upper surface: Close to 145A tinged with close to 177D to lighter than 177D. Color, lower surface: Close to 145A.Flower description:Flower arrangement and shape.—Single campanulate flowers arranged on dense axillary racemes; flowers face mostly outwardly.Flowering habit.—Freely flowering habit with about 130 flowers developing per inflorescence and about 15,000 flowers developing per plant during the flowering season.Fragrance.—None detected.Natural flowering season.—Plants begin flowering about 140 days after planting; plants flower continuously from the summer into the autumn in The Netherlands.Flower longevity.—Flowers last about one week on the plant; flowers not persistent.Flower buds.—Length: About 6 mm. Diameter: About 2 mm. Shape: Oblong. Texture and luster: Smooth, glabrous; matte. Color: Developing sepals, close to 138A; developing petals, close to a blend of N87A and N88A.Inflorescence height(length).—About 7.5 cm.Inflorescence diameter.—About 3.2 cm.Flower diameter.—About 7 mm by 7 mm.Flower height.—About 1 cm.Throat diameter.—About 1.5 mm.Tube length.—About 3 mm.Tube diameter.—About 2.25 mm.Petals.—Quantity and arrangement: Four arranged in a single whorl; petals fused about 42.5% of the petal length from the base. Length: About 7 mm. Width: About 2.5 mm. Shape: Narrowly obovate to narrowly oblong; moderately concave. Apex, upper petal: Obtuse. Apex, lateral and lower petals: Bluntly acute. Margin: Entire; moderately involute; not undulate. Texture and luster, upper and lower surfaces: Smooth, glabrous; slightly glossy. Texture and luster, throat and tube: Smooth, glabrous; slightly glossy. Color: When opening, upper surface: Close to N87A. When opening, lower surface: Close to N87A; distally, close to N87B. Fully opened, upper surface: Close to a blend of N87A and N88A; venation, close to a blend of N87A and N88A; color does not change with subsequent development. Fully opened, lower surface: Close to N87A; venation, close to N87A; color does not change with subsequent development. Throat: Close to N87A; venation, close to N87A. Tube: Close to a N87A and N87B; venation, close N87A and N87B.Sepals.—Quantity and arrangement: Four arranged in a single whorl and fused at the base. Length: About 3 mm. Width: About 1.25 mm. Shape: Narrowly ovate. Apex: Acute. Base: Cuneate, fused. Margin: Entire. Texture and luster, upper and lower surfaces: Smooth, glabrous; matte. Color: When opening, upper surface: Close to 143A. When opening, lower surface: Close to 143A tinged with close to 72A. Fully opened, upper surface: Close to 137D. Fully opened, lower surface: Close to 137D tinged with close to 72B.Peduncles.—Length: About 9.3 cm. Diameter: About 2 mm. Aspect: About 45 degrees from stem axis. Strength: Strong. Texture and luster: Densely pubescent; slightly glossy. Color: Close to 144B.Pedicels.—Length: About 3 mm. Diameter: About 0.5 mm. Aspect: About 85 degrees from peduncle axis. Strength: Moderately strong. Texture and luster: Densely pubescent; matte. Color: Close to 138B.Flower bracts.—Quantity and arrangement: One at the base of each flower. Length: About 2.5 mm. Width: About 1 mm. Shape: Narrowly ovate. Apex: Acute. Base: Cuneate. Margin: Entire. Texture, upper and lower surfaces: Smooth, glabrous. Color, upper and lower surfaces: Close to 137D.Reproductive organs.—Stamens: Quantity per flower: Two. Filament length: About 8.5 mm. Filament color: Close to 86A. Anther size: About 0.75 mm by 2 mm. Anther shape: Oblong. Anther color: Close to 83B. Pollen amount: Moderate. Pollen color: Close to 11D. Pistils: Quantity per flower: One. Pistil length: About 8.5 mm. Stigma diameter: About 5 mm. Stigma shape: Club-shaped. Stigma color: Greyish white. Style length: About 8.45 mm. Style color: Close to 86A. Ovary color: Close to 143C.Seeds and fruits.—To date, seed and fruit development has not been observed on plants of the newHebe.Pathogen & pest resistance: To date, plants of the newHebehave not been noted to be resistant to pathogens and pests common toHebeplants.Garden performance: Plants of the newHebehave exhibited good garden performance and to be tolerant to rain, wind, temperatures ranging from about −7C to about 40C and to be suitable for USDA Hardiness Zones 8 to 11. | 7,935 |
PP35616 | The colors in the photographs may differ slightly from the color values cited in the detailed botanical description, which accurately describe the colors of the newSempervivum. DETAILED BOTANICAL DESCRIPTION The following is a detailed description of the new cultivar as observed on1.8-year-old plants of the newSempervivumas grown outdoors in 13-cm containers in Westerlo, Belgium. The phenotype of the new cultivar may vary with variations in environmental, climatic, and cultural conditions, as it has not been tested under all possible environmental conditions. The color determination is in accordance with The 2015 Colour Chart of The Royal Horticultural Society, London, England, except where general color terms of ordinary dictionary significance are used.General description:Plant type.—Evergreen succulent perennial.Plant habit.—Basal rosette, offsets clustered around main rosette.Height and spread.—Reaches up to 7 cm in height and 15 cm in spread and average diameter of main rosette is 7 cm as a 1.8 year-old plant in a container, foliage height can reach up to 10 cm in the landscape.Hardiness.—At least hardy in U.S.D.A. Zones 3 to 9.Diseases and pests.—No susceptibility or resistance to diseases or pests has been observed,Sempervivumsare generally disease free unless grown under wet and cold conditions.Root description.—Rhizomes grow from main rosette and hold offsets, rounded in shape, average of 2.5 cm in length and 1.5 mm in width, surface texture smooth, glabrous and matte, N199C in color.Propagation.—Cuttings.Root development.—A cutting will root in about 3.5 months and will fully root in a P9 container in about 8 months from a rooted cutting.Growth rate.—Moderate.Stem description: Stemless.Foliage description:Leaf shape.—Oblong, succulent.Leaf division.—Simple.Leaf arrangement.—Rosette.Leaf quantity.—70 per rosette.Leaf base.—Broad cuneate.Leaf apex.—Abruptly acute.Leaf venation.—No veins visible.Leaf margins.—Ciliate and un-lobed.Leaf attachment.—Sessile.Leaf orientation.—Slightly curved upward.Leaf substance.—Succulent, average of 2 mm in thickness.Leaf surface.—Both surfaces are smooth and moderately covered with medium length cobweb type pubescence, young foliage is more densely covered with pubescence.Leaf color.—Upper and lower surfaces: spring; young foliage 185A, center of rosette 187A to 187B, tips 185A, mature foliage a blend of 187A, 187B and 187C, tips 185A, summer; young foliage small offsets 145B, tinged with 185B, larger leaves 185B and 145C, mature foliage 187C and 185B, tips and margins 145A to 145B, aging leaves changing to 187C, tips and margins 145B to 145C, autumn; young foliage a blend of 187A and 185B, tips 185A, base 145B, mature foliage 189B, N187A to N187B, tips 185A and 156B, winter; young foliage a blend of 187A to 187B, base 145B, mature foliage N187A, tips 187A to 187B, tips and base 145B, center of rosette 187B, with a hint of 145B.Leaf size.—Average of 3 cm in length and 8 mm in width, 2 mm in thickness.Flower description: Has not been observed to flower under any tested growing conditions to date. | 3,093 |
PP35617 | BOTANICAL DESCRIPTION OF THE PLANT The following observations and measurements, made in June of 2022, describe averages from a sample set of six 15-week-old ‘PREESMANPT2’ plants grown in 13 cm nursery containers, from rooted cuttings, at a greenhouse in Strijen, the Netherlands. Plants were produced using conventional greenhouse production protocols forPrimulinasp. which consisted of growing plants under shade with light levels of 300 watts per square meter, watering with ebb and flood benches, fertigating using an A-B fertilization scheme, and employing chemical pest measures for thrips control. No photoperiodic treatments were utilized in production. Those skilled in the art will appreciate that certain characteristics will vary with older or, conversely, with younger plants. ‘PREESMANPT2’ has not been observed under all possible environmental conditions. Where dimensions, sizes, colors and other characteristics are given, it is to be understood that such characteristics are approximations or averages set forth as accurately as practicable. The phenotype of the variety may differ from the descriptions set forth herein with variations in environmental, climatic and cultural conditions. Color notations are based on The Royal Horticultural Society Colour Chart, The Royal Horticultural Society, London, 2015 (sixth edition). A botanical description of ‘PREESMANPT2’ and a comparison with the parent plant and most similar commercial cultivar are provided below.Plant description:Growth habit.—Broad spreading to spreading-upright herbaceous perennial with foliage growing from basal shoots.Plant shape.—Flattened to flattened globular.Height from soil level to top of foliar plane.—14.6 cm.Plant spread.—79.0 cm.Number of basal shoots per plant.—8, with one primary shoot and 7 lateral shoots.Growth rate.—Moderately fast-growing.Plant vigor.—Highly vigorous.Propagation.—Type — Asexual propagation is accomplished by way of meristematic tissue culture micropropagation. Time to initiate rooting — Approximately 140 days at 18 degrees Celsius. Time to produce a rooted cutting — Approximately 22 weeks are needed to produce a marketable plant in a 13 cm nursery container.Disease and pest resistance or susceptibility.—Neither susceptibility nor resistance to pests and diseases common toPrimulina dryashave been observed.Environmental tolerances.—Adapt to temperatures as low as 5 degrees Celsius and at least as high as 40 degrees Celsius; moderate tolerance to rain; low to moderate tolerance to wind.Roots:General.—Moderately dense, moderately branched rooting; roots are fleshy and non-fibrous.Distribution in the soil profile.—Shallow to moderately deep.Texture.—Smooth, with fine lateral roots.Foliage:Quantity.—13 leaves along the main shoot and 5 per lateral shoot, on average.Arrangement.—Alternate.Attachment.—Petiolate.Division.—Simple.Lamina.—Shape — Broad ovate. Length — 13.3 cm, excluding the petiole. Width — 11.5 cm. Apex — Broad bluntly acute. Base — Truncate. Aspect — Moderately to strongly concave and furrowed. Margins — Coarsely crenate margins with no undulation. Luster, adaxial surface — Glossy. Luster, abaxial surface — Very slightly glossy. Texture, adaxial surface — Moderately to densely pubescent with strigose hairs with an average length of 0.4 cm and colored white, nearest to RHS NN155D. Texture, abaxial surface — Densely pubescent with soft, short hairs with an average length of 0.15 cm and colored white, nearest to RHS NN155D. Color — Juvenile foliage, adaxial surface — Green, nearest to a mixture of RHS NN137A and 139A, and fading to yellow-green towards the base, nearest to RHS 144A; veins and portions of the lamina adjacent to veins colored greyed-green, nearest to in between RHS 194A and 194B. Juvenile foliage, abaxial surface — Yellow-green, nearest to RHS 148C. Mature foliage, adaxial surface — Nearest to a mixture of yellow-green and greyed-green, RHS 147A and N189A yet considerably darker; veins and portions of the lamina adjacent to veins colored greyed-green, nearest to in between RHS 194A and 194B. Mature foliage, abaxial surface — Yellow-green, nearest to RHS N148B.Venation.—Pattern — Reticulate. Color, adaxial surfaces — Greyed-green, nearest to RHS 194A. Color, abaxial surface — Yellow-green, nearest to RHS 144A.Petiole:Attitude.—Upright and outward.Strength.—Moderately strong.Aspect.—Flattened.Length.—3.1 cm.Width.—1.3 cm.Height.—0.6 cm.Luster, adaxial surface.—Moderately glossy.Luster, abaxial surface.—Matte.Texture, adaxial surface.—Moderately to densely pubescent with strigose hairs with an average length of 0.25 cm and colored white, nearest to RHS NN155D.Texture, abaxial surface.—Densely pubescent with soft, short hairs with an average length of 0.15 cm and colored white, nearest to RHS NN155D.Color, adaxial surface.—Yellow-green, nearest to RHS 144A, and transitioning to green towards the margins, nearest to RHS 137A.Color, abaxial surface.—Yellow-green, nearest to RHS 148C, and becoming darker towards the margins, nearest to RHS 147B.Inflorescence: To date, ‘PREESMANPT2’ has not flowered.Comparisons with the parent plants: Plants of the new cultivar ‘PREESMANPT2’ differ from the parent,Primulina dryas‘Preesman PT’ (Dutch Plant Breeders' Rights grant number 44601), in the characteristics described in Table 1 below. TABLE 1Characteristic‘PREESMANPT2’‘Preesman PT’Foliage shape.Broadly ovate.Narrowly ovate.General colorationA mixture of yellow-A mixture of yellow-of the maturegreen and greyed-green and green,foliage.green, generallygenerally appearingappearing as a darkas a lighter shadegreen coloration.of green relative to‘PREESMANPT2’.Expression ofProminent lightNone.leaf color pattern.greyed-greenreticulate pattern. Plants of the new cultivar ‘PREESMANPT2’ differ from the most similar commercial variety known to the inventor,Primulina dryas‘Latifolia Dwarf’ (not patented), in the characteristics described in Table 2 below. TABLE 2Characteristic‘PREESMANPT2’‘Latifolia Dwarf’Foliage aspect.Substantially moreMuch less concaved,concaved, relative torelative to‘Latifolia Dwarf’.‘PREESMANPT2’.General colora-A mixture of yellow-A mixture of yellow-tion of thegreen and green; generallygreen and green; generallymature foliage.appearing as a lighterappearing as a darkershade of green relative toshade of green relative to‘Latifolia Dwarf’.‘PREESMANPT2’.Expression ofProminent light greyed-Prominent light greyed-leaf colorgreen reticulate pattern;green reticulate pattern,pattern.more prominent thanyet less prominent than‘Latifolia Dwarf’.‘PREESMANPT2’. | 6,587 |
PP35618 | DETAILED BOTANICAL DESCRIPTION The following is a detailed description of the new variety based on observations of 10-month-old plants that were grown outside in a field under full sun in Canby, Oregon (USDA Zone 8). Temperatures range from a high of 35° C. in August to a low of 0° C. in January. Normal rainfall in Canby, Oregon is around 1 m per year. Color references are based on the 2007 R.H.S. Colour Chart of The Royal Horticultural Society of London, 5thEdition.Plant:Type.—Herbaceous perennial.Hardiness.—USDA Zones 5 to 9.Size.—48.0 cm wide and 39.0 cm tall from the top of the soil to the top of the inflorescences.Form.—Basal clump.Number of crowns.—About 56.Vigor.—High.Flowering stems:Type.—Ascending strongly upright and thick.Number.—About 56 stems from the crown.Inflorescences per stem.—From 1 to 3.Size.—About 39.0 cm tall to a terminal inflorescence and 10.0 cm wide at the base.Number of leaves per stem.—Up to 18, with oldest leaves senescent.Strength.—High.Internode length.—From 1.0 cm to 3.0 cm.Texture.—Pubescent.Color.—RHS 136B.Leaf:Type.—Simple.Arrangement.—Alternate.Shape.—Lanceolate.Length.—To 7.5 cm.Width.—To 1.75 cm.Margin.—Coarsely serrate.Apex.—Acute.Base.—Clasping.Texture.—Pubescent on both sides.Venation.—Pinnate.Upper surface color.—RHS 137B, with a main vein of RHS 147C.Lower surface color.—RHS 137D, with a main vein of RHS 147D.Petiole.—Sessile.Inflorescence:Type.—Composite, on terminal stalked heads.Flower number.—About 90 per plant.Density.—High.Width.—To 9.0 cm.Depth.—2.0 cm.Form.—Ray florets hold upright when young, lower ray florets reflex down with maturity, and a mature disc is slightly convex.Bloom period.—June through July in Canby, Oregon.Lastingness on the plant.—About 3 weeks in Canby, Oregon.Fragrance.—Slight to none.Fertility.—Low.Flower bud (immature inflorescence):Form.—Ray florets held upwards and inner rays cupped inwards.Width.—2.0 cm.Depth.—1.2 cm.Color.—RHS 8B.Ray florets:Number.—About 90.Shape.—Obelliptic to linear, with from 3 to 5 clefts.Length.—2.5 cm.Width.—0.5 to 0.75 cm.Apex.—Retuse.Base.—Attenuate.Margin.—Entire.Texture.—Glabrous.Color(both surfaces).—RHS 8B when young, changing to RHS NN155B.Claw.—To 2.5 mm long and 1.0 mm wide; RHS 150D.Pistil.—1; 3.0 mm long.Stamen.—None.Ovary.—1.0 mm long; RHS 145D.Style.—1.0 mm long; RHS 145C.Stigma.—2-branched; 0.5 mm long; RHS 14B.Disc/disc florets:Disc.—Shape: Slightly conic, becoming convex. Depth: Tp 13.0 mm. Width: To 18.0 mm. Color: RHS 15B.Disc florets.—Number: About 300. Shape: 5-lobed, tubular campanulate corolla. Length: 4.0 mm. Width: 1.0 mm. Texture: Glabrous. Emerging color: RHS 17B on the top half and RHS 145D on the bottom half. Mature color: RHS NN155A. Pistil: 1; 7.0 mm long. Ovary: 1.0 mm long; RHS 145D. Style: 2.0 mm long; RHS 160B. Stigma: 2-branched; 0.5 mm long; RHS 157C. Stamen: 5; 3.0 mm long. Filament: 1.0 mm long; RHS 150D. Anther: 3.0 mm; RHS 17B. Pollen: None.Involucral bracts:Number.—About 30 in 3 imbricate whorls.Area.—2.5 cm wide and 10.0 mm deep.Lobes.—Shape: Lanceloate to ovate. Length: 5.0 mm. Width: 6.0 mm. Color: RHS 137B. Margin: Thin; somewhat transparent; RHS 186C. Apex: Acute. Texture: Glabrous.Receptacle:Length.—17.0 mm.Depth.—4.0 mm.Color.—RHS 149D.Seeds: None.Pests/diseases: No unusual resistance or susceptibility noted to date. | 3,323 |
PP35619 | DETAILED BOTANICAL DESCRIPTION The aforementioned photographs and following observations and measurements describe plants grown during the late summer in 10.5-cm containers in a glass-covered greenhouse in Heemskerk, The Netherlands and under cultural practices typically used in commercialPhalaenopsisproduction. Plants were 18 months old when the photographs and description were taken. During the first twelve months of production of the plants, day and night temperatures averaged 27 C. During the final six months of production of the plants, day temperatures ranged from 20 C to 22 C and night temperatures ranged from 18 C to 20 C. During the production of the plants, light levels ranged from a minimum of 5,000 lux to a maximum of 10,000 lux. In the following description, color references are made to The Royal Horticultural Society Colour Chart, 2015 Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:Phalaenopsis hybrida‘Cheeky Pirate’.Parentage:Female, or seed, parent.—Phalaenopsis hybrida‘Gypsy Queen’, disclosed in U.S. Plant Pat. No. 25,509.Male parent.—Proprietary breeding selection ofPhalaenopsis hybridaidentified as code number 50M0323, not patented.Propagation:Type.—By in vitro meristem propagation.Time to initiate roots, summer and winter.—About two weeks at temperatures about 28 C to 30 C.Time to produce a rooted young plant, summer and winter.—About 20 to 25 weeks at temperatures about 28 C to 30 C.Root description.—Thin, fibrous; typically light yellowish white in color; actual color of the roots is dependent on substrate composition, water quality, fertilizer, substrate temperature and age of roots.Rooting habit.—Freely branching; medium density.Plant description:Plant form and growth habit.—Herbaceous epiphyte; broadly upright plant habit with typically two inflorescences per plant, each inflorescence with numerous flowers; monopodial; moderately vigorous growth habit and moderate growth rate.Plant height, substrate level to top of foliar plane.—About 19.8 cm.Plant height, substrate level to top of inflorescences.—About 41.9 cm.Plant diameter or spread.—About 27.3 cm.Leaf description:Arrangement and quantity.—Distichous, simple; sessile; about five leaves per plant.Length.—About 20.6 cm.Width.—About 7 cm.Aspect.—Upright to outwardly arching.Shape.—Narrowly obovate to oblanceolate; slightly carinate.Apex.—Unequal obtuse to unequal and broadly acute.Base.—Sheathing. Sheath length: About 1.9 cm. Sheath width: About 1.4 cm. Sheath color: Close to 143C; towards the margins, tinged with close to 176B.Margin.—Entire; not undulate.Texture and luster, upper and lower surfaces.—Smooth, glabrous; slightly glossy.Venation pattern.—Camptodromous.Color.—Developing leaves, upper surface: Close to NN137A. Developing leaves, lower surface: Close to 146A; towards the margins and along the midvein, tinged with close to N186C. Fully expanded leaves, upper surface: Close to NN137B; venation, close to 147A. Fully expanded leaves, lower surface: Close to 146A to 146B; towards the margins, tinged with close to N186C; venation, close to 144A.Inflorescence description:Appearance and flowering habit.—Showy zygomorphic flowers arranged on axillary branched racemes; typically two inflorescences per plant; each inflorescence with about nine flowers; flowers face outwardly on arching inflorescences supported by upright peduncles; flowers with three petals, two lateral petals and one center petal transformed into a labellum and three sepals.Fragrance.—None detected.Time to flower.—Plants begin flowering about six months after planting; plants flower naturally during the winter into the spring.Flower longevity.—Long flowering period, individual flowers maintain good substance for about ten weeks on the plant; flowers not persistent.Inflorescence length(lowermost flower to inflorescence apex).—About 29.4 cm.Inflorescence width.—About 14.8 cm.Flower buds.—Height: About 2.2 cm. Diameter: About 1.7 cm by 1.9 cm. Shape: Broadly ovate. Color: Slightly darker than N77A; towards the base, tinged with close to 177C to 177D.Flower size.—About 7.6 cm (vertical) by 9.7 cm (horizontal).Flower depth.—About 3.2 cm.Lateral petals.—Quantity and arrangement: Three, two lateral petals and one center petal transformed into a labellum. Length: About 4.6 cm. Width: About 6.2 cm. Shape: Roughly reniform. Apex: Obtuse to broadly and shallowly retuse. Margin: Entire. Texture and luster, upper and lower surfaces: Smooth, glabrous, velvety; matte. Color: When opening, upper surface: Slightly darker than N78A; towards the base, close to N78A to a blend of N78A to N78B; at the base, slightly darker than N78A; sparse and fine central dots, close to 76C. When opening, lower surface: Close to N78B to slightly darker towards the margins; towards the base, close to N75A; venation, close to N78A and N78B. Fully opened, upper surface: Close to a blend of N78A and NN78A; towards the base, close to N78B; at the base, close to NN78A; narrow margin edges, close to 76C; sparse to moderate and fine central dots, close to 76C; venation, close to N78A; color does not change with subsequent development. Fully opened, lower surface: Close to N78C; towards the base, close to N80B to N80C; narrow margin edges, close to 76C; venation, close to N78B; color does not change with subsequent development.Labella.—Appearance: Three-parted with two lateral lobes and a central lobe. Length, lateral lobes: About 2.3 cm. Width, lateral lobes: About 1.6 cm. Length, central lobe: About 2.4 cm. Width, central lobe: About 8 mm to 20 mm. Length, cirrose tips: About 1.2 cm. Shape, lateral lobes: Obovate. Shape, central lobe: Deltoid with a slightly elongated apex. Apex, lateral lobes: Obtuse. Apex, central lobe: Cleft with two recurved cirrose apices. Margins, lateral and central lobes: Entire. Texture and luster, lateral and central lobes, upper and lower surfaces: Smooth, glabrous, moderately velvety; matte. Callosities: Located at the base of the labellum and attachment point of the lateral petals; about 6 mm in length, about 7 mm in width and about 3 mm in height. Color: When opening, upper surface: Lateral lobes: Close to N79C; upper margin edges, close to 157A; towards the base, stripes, close to N155A. Central lobe: Close to a blend of NN78A and N79C; towards the base, close to N79C; at the base, close to 75B and 75C; radial stripes, close to N79C; cirrose apices, close to N79C. Callosities: Close to 12B to 12C with fine dots, close to 187C. When opening, lower surface: Lateral lobes: Upper half, close to N79C and lower half, close to 156C. Central lobe: Close to NN78A; towards the margins, apex and cirrose apices, close to N79C; center, close to 76A; at the base, close to N155A. Fully opened, upper surface: Lateral lobes: Close to N78A; towards the base, close to N79C; upper margin edges, close to 79D; towards the base, stripes, close to N155A slightly tinged with close to 12B. Central lobe: Close to NN78A; at the wide parts of the base, close to 164A; at the base, close to 75B and 75C; radial stripes, close to N79C; cirrose apices, close to a blend of NN78A and N79C. Callosities: Close to 12B and 21A with fine dots, close to 187C. Fully opened, lower surface: Lateral lobes: Center, close to N78A; above the center, close to N79C and below the center, close to 156C. Central lobe: Close to NN78A; towards the margins, apex and cirrose apices, close to N79C; center, close to 76A; at the wide parts of the base, close to 164C and at the base, close to N155A.Sepals.—Quantity and arrangement: Three, one upper dorsal sepal and two lower lateral sepals. Length, dorsal and lateral sepals: About 4.6 cm. Width, dorsal sepal: About 3.7 cm. Width, lateral sepal: About 3.1 cm. Shape, dorsal sepal: Broadly elliptic. Shape, lateral sepals: Ovate. Apex, dorsal sepal: Obtuse to broadly and bluntly acute. Apex, lateral sepals: Broadly and bluntly acute. Base, dorsal and lateral sepals: Truncate. Margin, dorsal and lateral sepals: Entire. Texture and luster, dorsal and lateral sepals, upper and lateral surfaces: Smooth, glabrous, moderately velvety; matte. Color, dorsal sepal: When opening, upper surface: Close to N78A to slightly darker than N78A; venation, close to N79C; moderate and fine dots, close to 76C. When opening, lower surface: Close to a blend of N77B and 186B; venation, close to N79D; moderate and fine dots, close to 76C. Fully opened, upper surface: Close to N78A; towards the margins, close to N78B to N78C; marginal edges, close to 76C; at the base, close to a blend of N78A and N79C; venation, slightly darker than N78A; moderate and fine dots, close to 76C. Fully opened, lower surface: Close to N78C; towards the base, close to N78D; venation, close to N78A to N78B; moderate and fine dots, close to 76C. Color, lateral sepals: When opening, upper surface: Close to a blend of N78A and N79C; center, close to N78B; at the base, close to 145D; venation, close to N79C; dense and fine dots, close to 76D. When opening, lower surface: Close to a blend of 182D and 196B; venation, close to N77B. Fully opened, upper surface: Close to N78A; center, close to N78B; at the base, close to 145D; narrow margin edge, close to 76C; venation, close to a blend of N78A and N79C; dense and fine dots, close to 76D. Fully opened, lower surface: Close to N78D; at the base, tinged with close to 145C; venation, close to NN78A; moderate and fine dots, close to 76C.Peduncles.—Length: About 54.9 cm. Diameter: About 5.5 mm. Strength: Strong. Aspect: Upright to outwardly arching. Texture and luster: Smooth, glabrous; matte. Color: Close to a blend of 197A and N200A; densely covered with fine dots and marbling, close to 148B.Pedicels.—Length: About 3.5 cm. Diameter: About 3 mm. Strength: Moderately strong. Aspect: About 70 degrees from peduncle axis. Texture and luster: Smooth, glabrous; matte. Color: Close to N148D; proximally, strongly tinged with close to 177B; distally, close to 157D and slightly tinged with close to 75C.Reproductive organs.—Androecium: Column length: About 9 mm. Column width: About 6 mm. Column color: Close to N78A and N78B. Pollinia quantity: Two. Pollinia diameter (per two pollinia): About 2 mm. Pollinia color: Close to 25A. Gynoecium: Stigma length: About 3.5 mm. Stigma width: About 5 mm. Stigma shape: Reniform. Stigma color: Close to N155A. Ovary length: About 6 mm. Ovary diameter: About 1 mm. Ovary color: Close to 150C. Seeds and fruits: To date, seed and fruit development have not been observed on plants of the newPhalaenopsis.Pathogen & pest resistance: To date, plants of the newPhalaenopsishave not been shown to be resistant to pathogens and pests common toPhalaenopsisplants.Temperature tolerance: Plants of the newPhalaenopsishave been observed to tolerate high temperatures about 40 C and are suitable for USDA Hardiness Zones 10 to 12. | 10,907 |
PP35620 | DETAILED BOTANICAL DESCRIPTION The aforementioned photographs and following observations and measurements describe plants grown during the autumn and early winter in 9-cm containers in a glass-covered greenhouse in Lochristi, Belgium and under cultural practices typically used in commercialPhalaenopsisproduction. During the production of the plants, day and night temperatures ranged from 18 C to 29 C and light levels ranged from 150 Watt/m2to 375 Watt/m2. Plants were 70 weeks old when the photographs and description were taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, 2001 Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:Phalaenopsis hybrida‘MI01764’.Parentage:Female parent.—Proprietary selection ofPhalaenopsis hybridaidentified as code number PHM00312, not patented.Male parent.—Proprietary selection ofPhalaenopsis hybridaidentified as code number PHM00345, not patented.Propagation:Type.—By in vitro meristem propagation.Time to initiate roots, summer.—About nine to ten weeks at temperatures about 26 C.Time to initiate roots, winter.—About ten to eleven weeks at temperatures about 26 C.Time to produce a rooted young plant, summer.—About 140 to 160 days at temperatures about 26 C.Time to produce a rooted young plant, winter.—About 150 to 180 days at temperatures about 26 C.Root description.—Thick, fleshy; typically grey green in color; actual color of the roots is dependent on substrate composition, water quality, fertilizer, substrate temperature and age of roots.Rooting habit.—Small amount of branching; sparse.Plant description:Plant form and growth habit.—Herbaceous epiphyte; upright plant habit with typically two inflorescences per plant, each inflorescence with numerous flowers; monopodial; vigorous growth habit and rapid growth rate.Plant height, substrate level to top of foliar plane.—About 9.5 cm.Plant height, substrate level to top of inflorescences.—About 41 cm.Plant diameter or spread.—About 36 cm.Leaf description:Arrangement and quantity.—Distichous, simple; sessile; about seven leaves per plant.Length.—About 19 cm.Width.—About 7 cm.Aspect.—Outwardly arching.Shape.—Elliptic.Apex.—Unequal obtuse.Base.—Sheathing.Margin.—Entire.Texture and luster, upper and lower surfaces.—Smooth, glabrous; moderately glossy.Venation pattern.—Camptodromous.Color.—When opening, upper surface: Close to 137A. When opening, lower surface: Close to 137C. Fully expanded leaves, upper surface: Close to 137B; venation, close to 137B. Fully expanded leaves, lower surface: Close to 137C; venation, close to 137C.Inflorescence description:Appearance and flowering habit.—Showy zygomorphic flowers arranged on axillary branched racemes; typically two inflorescences per plant; each inflorescence with about 21 flowers; flowers face outwardly on arching inflorescences supported by upright peduncles; flowers with three petals, two lateral petals and one center petal transformed into a labellum and three sepals.Fragrance.—None detected.Time to flower.—Plants begin flowering about 16 to 17 weeks after an inductive cooling period; flowers open about six weeks after flower buds develop.Flower longevity.—Long flowering period, individual flowers maintain good substance for about ten weeks on the plant; flowers not persistent.Inflorescence length(lowermost flower to inflorescence apex).—About 25 cm.Inflorescence width.—About 18 cm.Flower buds.—Height: About 1.3 cm. Diameter: About 1 cm. Shape: Ovate. Color: Close to 194C shaded with close to 187A and venation, close to 187A.Flower diameter.—About 5 cm.Flower depth.—About 2.1 cm.Petals, quantity and arrangement.—Three, two lateral petals and one center petal transformed into a labellum.Lateral petals.—Length: About 2.4 cm. Width: About 2.6 cm. Shape: Trullate to deltoid. Apex: Rounded. Margin: Entire to slightly undulate. Texture and luster, upper and lower surfaces: Smooth, glabrous, velvety; matte. Color: When opening and fully opened, upper surface: Close to 187A; towards the margins, close to 155D; color does not change with subsequent development. When opening and fully opened, lower surface: Close to 77A; towards the center, close to 155D; color does not change with subsequent development.Labella.—Appearance: Tri-lobed with two lateral lobes and a central lobe. Length: About 2 cm. Width: About 1.3 cm. Shape, lateral lobes: Obovate. Shape, central lobe: Trullate. Apex, lateral lobes: Obtuse. Apex, central lobe: Slightly cleft with two short, narrow and recurved cirrhose tips. Margins, lateral and central lobes: Entire. Texture and luster, upper and lower surfaces: Smooth, glabrous, moderately velvety; matte. Callosities: Located at the base of the labellum and attachment point of the lateral petals; about 3 mm in length, about 3 mm in width and about 4 mm in height. Color: When opening and fully opened, upper surface: Lateral lobes: Close to 155D; large spot near base, close to 187A; smaller spots in the center, close to 187A; and smaller spots towards the apex, close to 78B. Central lobe: Center, close to 155D; towards the base, close to 78B; spots, close to 187B. Callosities: Close to 187A. When opening and fully opened, lower surface: Lateral and central lobes: Close to 155D with colors of the upper surface visible.Sepals.—Quantity and arrangement: Three, two lower lateral sepals and one upper dorsal sepal. Length, lateral sepal: About 2.7 cm. Width, lateral sepals: About 2.7 cm. Length, dorsal sepal: About 1.6 cm. Width, dorsal sepal: About 1.3 cm. Shape, lateral sepals: Ovate to lanceolate; asymmetrical. Shape, dorsal sepal: Narrowly elliptic. Apex, lateral sepals: Bluntly acute. Apex, dorsal sepal: Obtuse. Base, lateral and dorsal sepals: Obtuse. Margin, lateral and dorsal sepals: Entire. Texture and luster, lateral and dorsal sepals, upper and lower surfaces: Smooth, glabrous, velvety; matte. Color, lateral and dorsal sepals: When opening and fully opened, upper surface: Close to 187A. When opening and fully opened, lower surface: Close to 77A; center, close to 155D; venation, close to 77A.Peduncles.—Length: About 41 cm. Diameter: About 5 mm. Strength: Strong, somewhat flexible. Aspect: Initially about 65 degrees from horizontal to mostly upright with development. Texture and luster: Smooth, glabrous; matte. Color: Close to 200A.Pedicels.—Length: About 4 cm. Diameter: About 3 mm. Strength: Moderately strong. Aspect: About 90 degrees from peduncle axis. Texture and luster: Smooth, glabrous; matte. Color: Proximally, close to 187A and distally, close to 145C.Reproductive organs.—Androecium: Column length: About 9 mm. Column width: About 5 mm to 6 mm. Column color: Close to 155D slightly blushed with close to 78B. Pollinia quantity: Two. Pollinia diameter (per two pollinia): About 3 mm. Pollinia color: Close to 25B. Gynoecium: Stigma length: About 4 mm. Stigma width: About 4.5 mm. Stigma shape: Broadly rhombic. Stigma color: Close to 155D. Ovary length: About 1.5 cm. Ovary diameter: About 2 mm. Ovary color: Close to 145C; distally, slightly blushed with close to 80C. Seeds and fruits: To date, seed and fruit development have not been observed on plants of the newPhalaenopsis.Pathogen & pest resistance: To date, plants of the newPhalaenopsishave not been shown to be resistant to pathogens and pests common toPhalaenopsisplants.Temperature tolerance: Plants of the newPhalaenopsishave been observed to tolerate temperatures ranging from about 15 C to about 40 C. | 7,543 |
PP35621 | DESCRIPTION OF THE NEW VARIETY The following detailed description sets forth the distinctive characteristics of ‘PHA567431’. Plants of the newPhalaenopsishave not been observed under all possible environmental conditions. The phenotype may vary somewhat with variations in environment such as temperature, light intensity, and day length, without, however, any variance in genotype. The chart used in the identification of colors described herein is The R.H.S. Colour Chart of The Royal Horticultural Society, London, England, 2015 edition, except where general color terms of ordinary significance are used. The color values were determined under 4000-6000 lux natural light in a greenhouse in Bleiswijk, the Netherlands. Observations and measurements were made in April 2023 on flowering plants which were planted in 12-centimeter (diameter) pots. After in vitro propagation, the plants were grown in nursery trays for 20-24 weeks, followed by transplantation to 12-centimeter pots and grown in a greenhouse between 27° C. to 29° C. for 30 weeks, continued by a cooling period of 8 weeks between 18° C. to 20° C. and 12 weeks in a greenhouse of 21° C. Flowering occurs after 50 weeks in 12-centimeter pots. DETAILED BOTANICAL DESCRIPTION Classification:Family.—Orchidaceae.Botanical.—Phalaenopsishybrid.Common name.—Moth orchid.Variety name.—‘PHA567431’.Parentage:Female parent.—Phalaenopsiscultivar ‘11-050208-0002’ (unpatented).Male parent.—Phalaenopsiscultivar ‘11-050243-0001’ (unpatented).Propagation:Type.—Meristem tissue culture.Roots:Root description.—Greyed-green colored roots (a color in between RHS 190B and RHS 190C) with branching lateral roots having yellow-green (RHS 145A) colored root tips.Plant:Crop time to flowering.—Following asexual propagation (in vitro), the rooted cuttings grow for 20-24 weeks. After transplantation into 12-cm pots, the plants are finished after 48 to 50 weeks.Growth habit of the peduncle.—Upright to slightly pendent with panicle inflorescence.Height(from soil level to top of inflorescence).—Approximately 57.0 cm to 62.0 cm.Width(measured from leaf tips).—About 36.0 cm to 38.0 cm.Vigor.—Strong.Leaves:Mature leaves.—Quantity per plant: 10 to 12 leaves are produced before flowering. Length (fully expanded): 18.0 cm to 20.0 cm. Width: 7.0 cm to 8.0 cm. Position of the broadest part of the leaf: At middle. Shape: Oblong. Base shape: Moderately elongated. Apex: Obtuse asymmetric. Leaf blade angle with the petiole (measured from the horizontal position): Between 15 degrees and 30 degrees. Leaf margin: Entire. Color: Upper surface: Green (a color in between RHS 146A and RHS 147A). Lower surface: Green (RHS 146B). Texture (both upper and lower surfaces): Smooth. Thickness: 2.0 mm to 3.0 mm. Variegation: Absent. Venation: Pattern: Parallel. Color of the midvein: Upper surface: RHS 147A. Lower surface: RHS 146A.Peduncle:Quantity per plant.—2.Number of flowers per peduncle.—15 to 25.Length.—57.0 cm to 62.0 cm.Diameter.—6.0 mm to 7.0 mm.Strength.—Strong.Aspect.—Upright to slightly pendent.Texture.—Smooth.Color.—Mix of green (RHS 146B), light green (RHS 195A), and reddish-brown (RHS 200B) (it becomes less reddish-brown toward inflorescence).Internode length.—2.5 cm to 3.0 cm.Inflorescence description:Appearance.—Upright to slightly pendent, panicle inflorescence with bilaterally symmetrical flowers that open in succession beginning with the lowermost flower.Number of inflorescences.—2.Inflorescence size.—Height (from base to tip): 300.0 mm to 350.0 mm.Flowering time.—First flowers can be expected 10 to 11 months after planting in a 12-cm pot.Flower.—Height: 80.0 mm to 85.0 mm. Diameter: 95.0 mm to 100.0 mm. Depth of lip: 25.0 mm to 27.0 mm.Flower shape.—Flat.Flower longevity.—On the plant: 13 to 15 weeks.Fragrance.—Absent.Petals.—Arrangement: Open/free. Shape: Moderately compressed. Apex: Rounded asymmetric. Margin: Weakly undulated. Length (from base to tip): 43.0 mm to 45.0 mm. Width: 56.0 mm to 58.0 mm. Position of the broadest part of the petal: Toward the base. Color (when fully opened): Upper surface: Basic color: White (RHS NN155D). Over color: Absent. Lower surface: Basic color: White (RHS NN155D). Over color: Absent. Number of spots, dots, and stripes on the petals (upper surface): None. Color of spots, dots, and stripes on the petals (upper surface): Not applicable. Density of netting of the petals (upper surface): None. Color of the netting (upper surface): Not applicable.Dorsal sepal.—Shape: Elliptic. Apex: Emarginated symmetric. Margin: Entire. Length (from base to tip): 46.0 mm to 48.0 mm. Width: 33.0 mm to 35.0 mm. Position of the broadest part of the dorsal sepals: At middle. Color (when fully opened): Upper surface: Basic color: White (RHS NN155D). Over color: Absent. Lower surface: Basic color: White (RHS NN155D). Over color: Light yellow-green (RHS 145D) and a touch of light reddish-purple (RHS N78D). Number of spots, dots, and stripes on the dorsal sepals (upper surface): None. Color of spots, dots, and stripes on the dorsal sepals (upper surface): Not applicable. Density of netting of the dorsal sepals (upper surface): None. Color of the netting (upper surface): Not applicable.Lateral sepals.—Shape: Ovate. Apex: Obtuse asymmetric. Margin: Entire. Length (from base to tip): 49.0 mm to 51.0 mm. Width: 28.0 mm to 30.0 mm. Position of the broadest part of the lateral sepals: Toward the base. Color (when fully opened): Upper surface: Basic color: White (RHS NN155D). Over color: Touch of light yellow-green (RHS 145D) at the base. Lower surface: Basic color: White (RHS NN155D). Over color: Light yellow-green (RHS 145D). Number of spots, dots, and stripes on the lateral sepals (upper surface): None. Color of spots, dots, and stripes on the lateral sepals (upper surface): Not applicable. Density of netting of the lateral sepals (upper surface): None. Color of the netting (upper surface): Not applicable.Labellum(lip).—Whiskers: Present. Length of whiskers: 22.0 mm to 24.0 mm. Color of whiskers: White (RHS NN155D). Pubescence on the lip: Absent.Lateral lobe.—Shape: Type V (as described in the International Union for the Protection of New Varieties of Plants (UPOV) Test Guidelines forPhalaenopsis); spatulate. Margin: Moderately undulated. Length: 22 mm to 24.0 mm. Width: 17.0 mm to 19.0 mm. Color: Upper surface: White (RHS NN155C); pink (RHS 182C) and reddish-orange stripes (RHS 174C) at the base; yellow margin (RHS 5A) and light yellow-green (RHS 154D) on one side. Lower surface: White (RHS NN155C); greenish-yellow (RHS 154D) toward margin on one side. Number of spots and stripes on the lateral lobe: Few stripes. Color of spots and stripes on the lateral lobe: Pink (RHS 182C) and reddish-orange (RHS 174C). Density of netting of the lateral lobe: None. Color of the netting: Not applicable.Apical lobe.—Shape: Triangular. Margin: Entire. Length: 20.0 mm to 22.0 mm. Width: 23.0 mm to 25.0 mm. Color: Upper surface: Orange margin (RHS N170B); light yellow-green (a color in between RHS 154C and RHS 154D) at the base; white (RHS NN155C) toward whiskers. Lower surface: Orange margin (RHS N170B); light yellow-green (RHS 154D) at the base; white (RHS NN155C) toward whiskers. Number of spots and stripes on the apical lobe: None. Color of spots and stripes on the apical lobe: Not applicable. Density of netting of the apical lobe: None. Color of the netting: Not applicable. Bump and ridge: Absent.Callus.—Average size: Medium. Height: 8.0 mm to 9.0 mm. Length: 5.0 mm to 6.0 mm. Width: 4.0 mm to 5.0 mm. Color: Greenish-yellow front (RHS 151C); light greenish-yellow (RHS 1C) on sides; yellow tips (RHS 9A); reddish-orange dots (RHS 174B) and yellowish-white (RHS NN155A) on sides.Reproductive organs:Column.—Length: 10.0 mm to 11.0 mm. Diameter: 5.0 mm to 6.0 mm. Color: White (RHS NN155D).Pollinia.—Quantity: 2. Diameter: 0.9 mm to 1.1 mm. Color: Orange-yellow (RHS 23A).Ovary.—Length: 11.0 mm to 13.0 mm. Diameter: 2.3 mm to 2.5 mm.Pedicel.—Length: 40.0 mm to 42.0 mm. Diameter: 2.6 mm to 2.9 mm. Color: Green (RHS 145A) at the base; light yellow-green (RHS 145B) and lighter yellow-green (RHS 157C) toward the flower. Texture: Smooth.Disease, pest, and stress resistance: No specific resistance or susceptibility observed to pathogens and pests common toPhalaenopsisto date.Fruit and seeds: Fruit and seed development has not been observed on plants of the newPhalaenopsisto date. COMPARISON WITH PARENTAL LINES AND MOST SIMILAR VARIETIES ‘PHA567431’ differs from the female parent plant ‘11-050208-0002’ (unpatented) in that ‘PHA567431’ has a medium to long plant length and moderately elongated leaves having horizontal to semi-dropping leaf attitude, whereas ‘11-050208-0002’ has medium plant length and slightly elongated leaves having semi-erect leaf attitude. ‘PHA567431’ differs from the male parent plant ‘11-050243-0001’ (unpatented) in that ‘PHA567431’ has a medium lip curvature of the lateral lobes and white whiskers, whereas ‘11-050243-0001’ has a strong lip curvature of the lateral lobes and white with greenish-yellow tipped whiskers. ‘PHA567431’ is most similar to the commercialPhalaenopsisplants named ‘PHALFOWIC’ (U.S. Plant Pat. No. 29,245) and ‘PHALHETWER’ (U.S. Plant Pat. No. 33,526). ‘PHA567431’ differs from the commercial variety ‘PHALFOWIC’ in that ‘PHA567431’ has white whiskers and triangular shaped apical lobes, whereas ‘PHALFOWIC’ has greenish-yellow whiskers and trullate apical lobes. Additionally, ‘PHA567431’ has strongly asymmetric leaf apexes, whereas ‘PHALFOWIC’ has symmetric or slightly asymmetric leaf apexes. ‘PHA567431’ differs from the commercial variety ‘PHALHETWER’ in that ‘PHA567431’ has long, white whiskers, medium to long plant length, and flat flowers in lateral view, whereas ‘PHALHETWER’ has very long, white with light greenish-yellow tipped whiskers, long to very long plant length, and concave flowers in lateral view. | 9,929 |
PP35622 | DETAILED BOTANICAL DESCRIPTION The aforementioned photograph and following observations, measurements and values describe plants grown during the spring and summer in 22-cm containers in a glass-covered greenhouse in Rheinberg, Germany and under cultural practices typical of commercialPetuniaproduction. During the production of the plants, day and night temperatures averaged 18C and light levels averaged 4,500 lux. Plants were twelve weeks old when the photograph was taken and 25 weeks old when the description was taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, Fifth Edition, except where general tetms of ordinary dictionary significance are used.Botanical classification:PetuniaXhybrida‘Dopetsmarwipin’.Parentage:Female, or seed, parent.—Proprietary selection ofPetuniaXhybridaidentified as code number TT20-K0509, not patented.Male, or pollen, parent.—Proprietary selection ofPetuniaXhybridaidentified as code number TT20-K0749, not patented.Propagation:Type.—By terminal vegetative cuttings.Time to initiate roots, summer.—About five days at temperatures about 20C.Time to initiate roots, winter.—About seven days at temperatures about 20C.Time to produce a rooted young plant, summer.—About three weeks at temperatures about 20C.Time to produce a rooted young plant, winter.—About four weeks at temperatures about 20C.Root description.—Fine, fibrous; close to 155B in color, actual color of the roots is dependent on substrate composition, water quality, fertilizers, substrate temperature and age of roots.Rooting habit.—Freely branching; dense.Plant description:Plant and growth habit.—Semi-upright and uniformly mounding plant habit; freely branching habit with about three primary lateral branches each with about twelve secondary branches developing after pinching; vigorous growth habit and moderate growth rate.Plant height, soil level to top of foliar plane.—About 28.8 cm.Plant height, soil level to top of floral plane.—About 29 cm.Plant diameter.—About 79 cm.Lateral branch description:Length.—About 33.5 cm.Diameter.—About 5 mm.Internode length.—About 2 cm.Strength.—Moderately strong.Aspect.—Initially upright to somewhat outwardly spreading.Texture and luster.—Pubescent; semi-glossy.Color, developing.—Close to 143A.Color, developed.—Close to 144A.Leaf description:Arrangement.—Before flowering, alternate; after flowering, opposite; simple.Length.—About 4.6 cm.Width.—About 2.2 cm.Shape.—Spatulate.Apex.—Obtuse.Base.—Attenuate.Margin.—Entire.Texture and luster, upper and lower surfaces.—Pubescent; leathery; semi-glossy.Venation pattern.—Pinnate; arcuate.Color.—Developing leaves, upper surface: Close to 137B. Developing leaves, lower surface: Close to 137C. Fully expanded leaves, upper surface: Close to 143A; venation, close to 144A. Fully expanded leaves, lower surface: Close to 143B; venation, close to 144B.Petioles.—Length: About 4 mm. Diameter: About 2.9 mm. Strength: Moderately strong; firm. Texture and luster, upper and lower surfaces: Smooth, glabrous; matte. Color, upper surface: Close to 144A. Color, lower surface: Close to 144B.Flower description:Flower type and flowering habit.—Single salverform flowers arising from leaf axils; freely flowering habit with usually about 436 flowers and flower buds developing per plant during the flowering season; flowers face mostly upright to outwardly.Fragrance.—None detected.Natural flowering season.—Plants flower continuously during the spring and summer in Germany; early flowering habit, plants typically beginning flowering about nine weeks after planting.Flower longevity.—Individual flowers last about two to three days on the plant; flowers persistent.Flower buds.—Length: About 3.8 cm. Diameter: About 5.3 mm. Shape: Ovoid. Texture and luster: Rippled; semi-glossy. Color: Close to N144A and 64A.Flower diameter.—About 5.7 cm by 5.9 cm.Flower depth(height).—About 5.4 cm.Flower throat diameter.—About 1.1 cm.Flower tube length.—About 2.9 cm.Flower tube diameter, proximally.—About 8 mm.Corolla.—Arrangement: Five petals fused at the base and opening into a flared trumpet. Petal lobe length (from throat): About 2.8 cm. Petal lobe width: About 2.7 cm. Petal shape: Roughly spatulate. Petal apex: Obtuse. Petal margin: Entire; slightly undulate. Petal texture and luster, upper and lower surfaces: Rippled, glabrous; semi-glossy. Throat texture and luster: Rippled; semi-glossy. Tube texture and luster: Rippled; semi-glossy. Color: Petal lobe, when opening, upper surface: Star-shaped pattern, close to 61A and 150D. Petal lobe, when opening, lower surface: Star-shaped pattern, close to 61B and 150D. Petal lobe, fully opened, upper surface: Star-shaped pattern, close to 67A and 155C; venation, close to N144A; color does not change with subsequent development. Petal lobe, fully opened, lower surface: Star-shaped pattern, close to 67B and 155C; venation, close to N144B; color does not change with subsequent development. Flower throat: Close to 153D; venation, close to 154A. Flower tube: Close to N144B; venation, close to N144C.Sepals.—Arrangement: Five sepals fused at the base forming a tubular star-shaped calyx. Length: About 1.4 cm. Diameter: About 2.1 mm. Shape: Oblong. Apex: Rounded. Base: Decurrent. Margin: Entire. Texture and luster, upper and lower surfaces: Smooth, glabrous; semi-glossy. Color: When opening and fully opened, upper surface: Close to 143A. When opening and fully opened, lower surface: Close to 143B.Peduncles.—Length: About 2.3 cm. Diameter: About 1.4 mm. Strength: Moderately strong. Texture and luster: Smooth, glabrous; semi-glossy. Color: Close to 143C.Reproductive organs.—Stamens: Quantity per flower: Five. Filament length: About 1.9 cm. Filament color: Close to NN155B. Anther length: About 3 mm. Anther shape: Ovate. Anther color: Close to 150D. Pollen amount: Abundant. Pollen color: Close to 150D. Pistils: Quantity per flower: One. Pistil length: About 2.3 cm. Style length: About 1.8 cm. Style color: Close to 142C. Stigma diameter: About 1.3 mm. Stigma shape: Rounded. Stigma color: Close to 150B. Ovary color: Close to 142A. Fruits: Quantity produced per plant: About 232 during the flowering season. Length: About 8.4 mm. Diameter: About 4.8 mm. Texture: Smooth, glabrous. Color: Close to 164B. Seeds: Quantity per flower: About 196. Length: About 0.3 mm. Diameter: About 0.4 mm. Texture: Smooth, glabrous. Color: Close to 200B.Garden performance: Plants of the newPetuniahave been observed to have good garden performance and tolerate wind, rain, temperatures ranging from about 5C to about 40C and to be suitable for USDA Hardiness Zone 11.Pathogen & pest resistance: To date, plants of the newPetuniahave not been observed to be resistant to pathogens and pests common toPetuniaplants. | 6,807 |
PP35623 | DETAILED BOTANICAL DESCRIPTION The aforementioned photograph and following observations, measurements and values describe plants grown during the spring and summer in 22-cm containers in a glass-covered greenhouse in Rheinberg, Germany and under cultural practices typical of commercialPetuniaproduction. During the production of the plants, day and night temperatures averaged 18 C and light levels averaged 4,500 lux. Plants were twelve weeks old when the photograph was taken and 25 weeks old when the description was taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, Fifth Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:PetuniaXhybrida‘Dopetsmarwired’.Parentage:Female, or seed, parent.—Proprietary selection ofPetuniaXhybridaidentified as code number TT20-K0785, not patented.Male, or pollen, parent.—Proprietary selection ofPetuniaXhybridaidentified as code number TT20-K0810, not patented.Propagation:Type.—By terminal vegetative cuttings.Time to initiate roots, summer.—About five days at temperatures about 20 C.Time to initiate roots, winter.—About seven days at temperatures about 20 C.Time to produce a rooted young plant, summer.—About three weeks at temperatures about 20 C.Time to produce a rooted young plant, winter.—About four weeks at temperatures about 20 C.Root description.—Fine, fibrous; close to 155B in color, actual color of the roots is dependent on substrate composition, water quality, fertilizers, substrate temperature and age of roots.Rooting habit.—Freely branching; dense.Plant description:Plant and growth habit.—Semi-upright and uniformly mounding plant habit; freely branching habit with about six to eight primary lateral branches each with about eight to nine secondary branches developing after pinching; vigorous growth habit and moderate growth rate.Plant height, soil level to top of foliar plane.—About 22.5 cm.Plant height, soil level to top of floral plane.—About 23.2 cm.Plant diameter.—About 74.5 cm.Lateral branch description:Length.—About 37 cm.Diameter.—About 4 mm.Internode length.—About 2.2 cm.Strength.—Moderately strong.Aspect.—Initially upright to somewhat outwardly spreading.Texture and luster.—Pubescent; semi-glossy.Color, developing.—Close to 144B.Color, developed.—Close to 144A; at the internodes, close to 144A to 144B.Leaf description:Arrangement.—Before flowering, alternate; after flowering, opposite; simple.Length.—About 5.1 cm.Width.—About 2.2 cm.Shape.—Spatulate.Apex.—Obtuse.Base.—Attenuate.Margin.—Entire.Texture and luster, upper and lower surfaces.—Pubescent; leathery; semi-glossy.Venation pattern.—Pinnate; arcuate.Color.—Developing leaves, upper surface: Close to 143B. Developing leaves, lower surface: Close to 143C. Fully expanded leaves, upper surface: Close to 143A; venation, close to 144B. Fully expanded leaves, lower surface: Close to 143B; venation, close to 144C.Petioles.—Length: About 4 mm. Diameter: About 2 mm. Strength: Moderately strong; firm. Texture and luster, upper and lower surfaces: Smooth, glabrous; matte. Color, upper and lower surfaces: Close to 144B.Flower description:Flower type and flowering habit.—Single salverform flowers arising from leaf axils; freely flowering habit with usually about 448 flowers and flower buds developing per plant during the flowering season; flowers face mostly upright to outwardly.Fragrance.—None detected.Natural flowering season.—Plants flower continuously during the spring and summer in Germany; early flowering habit, plants typically beginning flowering about nine weeks after planting.Flower longevity.—Individual flowers last about two to three days on the plant; flowers persistent.Flower buds.—Length: About 3.4 cm. Diameter: About 5 mm. Shape: Ovoid. Texture and luster: Rippled; semi-glossy. Color: Close to 150B and 46A.Flower diameter.—About 5.3 cm by 5.6 cm.Flower depth(height).—About 4.6 cm.Flower throat diameter.—About 1.2 cm.Flower tube length.—About 2.3 cm.Flower tube diameter, proximally.—About 6.8 mm.Corolla.—Arrangement: Five petals fused at the base and opening into a flared trumpet. Petal lobe length (from throat): About 2.5 cm. Petal lobe width: About 2.4 cm. Petal shape: Roughly spatulate. Petal apex: Obtuse. Petal margin: Entire; slightly undulate. Petal texture and luster, upper and lower surfaces: Rippled, glabrous; semi-glossy. Throat texture and luster: Rippled; semi-glossy. Tube texture and luster: Rippled; semi-glossy. Color: Petal lobe, when opening, upper surface: Star-shaped pattern, close to 46A and 154B. Petal lobe, when opening, lower surface: Star-shaped pattern, close to 47A and 154C. Petal lobe, fully opened, upper surface: Star-shaped pattern, close to 45C and 155C (distally) and 3C (proximally); venation, close to 154A; color does not change with subsequent development. Petal lobe, fully opened, lower surface: Star-shaped pattern, close to 45D and 155C (distally) and 3C (proximally); venation, close to 154A; color does not change with subsequent development. Flower throat: Close to 1B; venation, close to 151B. Flower tube: Close to 46B; venation, close to 149A.Sepals.—Arrangement: Five sepals fused at the base forming a tubular star-shaped calyx. Length: About 1.9 cm. Diameter: About 2.3 mm. Shape: Oblong. Apex: Rounded. Base: Decurrent. Margin: Entire. Texture and luster, upper and lower surfaces: Smooth, glabrous; semi-glossy. Color: When opening and fully opened, upper surface: Close to 143A. When opening and fully opened, lower surface: Close to 143C.Peduncles.—Length: About 2.6 cm. Diameter: About 1 mm. Strength: Moderately strong. Texture and luster: Smooth, glabrous; semi-glossy. Color: Close to 143C.Reproductive organs.—Stamens: Quantity per flower: Five. Filament length: About 2 cm. Filament color: Close to 155B. Anther length: About 1.3 mm. Anther shape: Ovate. Anther color: Close to 158B. Pollen amount: Abundant. Pollen color: Close to 158A. Pistils: Quantity per flower: One. Pistil length: About 2.2 cm. Style length: About 1.8 cm. Style color: Close to 145A. Stigma diameter: About 1.4 mm. Stigma shape: Rounded. Stigma color: Close to 149D. Ovary color: Close to 143B. Fruits: Quantity produced per plant: About 24 during the flowering season. Length: About 5.9 mm. Diameter: About 3.8 mm. Texture: Smooth, glabrous. Color: Close to 161C. Seeds: Quantity per flower: About 20. Length: About 0.7 mm. Diameter: About 0.6 mm. Texture: Smooth, glabrous. Color: Close to 166A.Garden performance: Plants of the newPetuniahave been observed to have good garden performance and tolerate wind, rain, temperatures ranging from about 5 C to about 40 C and to be suitable for USDA Hardiness Zone 11.Pathogen & pest resistance: To date, plants of the newPetuniahave not been observed to be resistant to pathogens and pests common toPetuniaplants. | 6,894 |
PP35624 | DETAILED BOTANICAL DESCRIPTION The aforementioned photograph and following observations, measurements and values describe plants grown during the spring and summer in 22-cm containers in a glass-covered greenhouse in Rheinberg, Germany and under cultural practices typical of commercialPetuniaproduction. During the production of the plants, day and night temperatures averaged 18 C and light levels averaged 4,500 lux. Plants were twelve weeks old when the photograph was taken and 25 weeks old when the description was taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, Fifth Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:PetuniaXhybrida‘Dopetsweewhi97’.Parentage:Female, or seed, parent.—Proprietary selection ofPetuniaXhybridaidentified as code number TT19-K0289, not patented.Male, or pollen, parent.—Proprietary selection ofPetuniaXhybridaidentified as code number TT20-K0862, not patented.Propagation:Type.—By terminal vegetative cuttings.Time to initiate roots, summer.—About five days at temperatures about 20 C.Time to initiate roots, winter.—About seven days at temperatures about 20 C.Time to produce a rooted young plant, summer.—About three weeks at temperatures about 20 C.Time to produce a rooted young plant, winter.—About four weeks at temperatures about 20 C.Root description.—Fine, fibrous; close to 155B in color, actual color of the roots is dependent on substrate composition, water quality, fertilizers, substrate temperature and age of roots.Rooting habit.—Freely branching; dense.Plant description:Plant and growth habit.—Semi-upright and uniformly mounding plant habit; freely branching habit with about seven to eight primary lateral branches each with about eight to nine secondary branches developing after pinching; vigorous growth habit and moderate growth rate.Plant height, soil level to top of foliar plane.—About 21 cm.Plant height, soil level to top of floral plane.—About 26 cm.Plant diameter.—About 66 cm.Lateral branch description:Length.—About 38 cm.Diameter.—About 4 mm.Internode length.—About 2 cm.Strength.—Moderately strong.Aspect.—Initially upright to somewhat outwardly spreading.Texture and luster.—Pubescent; semi-glossy.Color, developing and developed.—Close to 144A to 144B.Leaf description:Arrangement.—Before flowering, alternate; after flowering, opposite; simple.Length.—About 3.6 cm.Width.—About 2.1 cm.Shape.—Spatulate.Apex.—Obtuse.Base.—Attenuate.Margin.—Entire.Texture and luster, upper and lower surfaces.—Pubescent; leathery; semi-glossy.Venation pattern.—Pinnate; arcuate.Color.—Developing and fully expanded leaves, upper surface: Close to 141B; venation, close to 139D. Developing and fully expanded leaves, lower surface: Close to 141C; venation, close to 139D.Petioles.—Length: About 3 mm. Diameter: About 2.5 mm. Strength: Moderately strong; firm. Texture and luster, upper and lower surfaces: Smooth, glabrous; matte. Color, upper surface: Close to 138A. Color, lower surface: Close to 138B.Flower description:Flower type and flowering habit.—Single salverform flowers arising from leaf axils; freely flowering habit with usually about 480 flowers and flower buds developing per plant during the flowering season; flowers face mostly upright to outwardly.Fragrance.—None detected.Natural flowering season.—Plants flower continuously during the spring and summer in Germany; early flowering habit, plants typically beginning flowering about nine weeks after planting.Flower longevity.—Individual flowers last about two to three days on the plant; flowers persistent.Flower buds.—Length: About 4.4 cm. Diameter: About 7.9 mm. Shape: Ovoid. Texture and luster: Rippled; semi-glossy. Color: Close to 149B.Flower diameter.—About 5.7 cm by 6.1 cm.Flower depth(height).—About 5.8 cm.Flower throat diameter.—About 1.2 cm.Flower tube length.—About 3 cm.Flower tube diameter, proximally.—About 8.7 mm.Corolla.—Arrangement: Five petals fused at the base and opening into a flared trumpet. Petal lobe length (from throat): About 2.9 cm. Petal lobe width: About 3.2 cm. Petal shape: Roughly spatulate. Petal apex: Obtuse. Petal margin: Entire; slightly undulate. Petal texture and luster, upper and lower surfaces: Rippled, glabrous; semi-glossy. Throat texture and luster: Rippled; semi-glossy. Tube texture and luster: Rippled; semi-glossy. Color: Petal lobe, when opening, upper and lower surfaces: Close to 157D. Petal lobe, fully opened, upper surface: Close to 155C; venation, close to 149A; color does not change with subsequent development. Petal lobe, fully opened, lower surface: Close to 155D; venation, close to 149D; color does not change with subsequent development. Flower throat: Distally, close to 157A and proximally, close to 145A; venation, close to 145A. Flower tube: Close to 150C; venation, close to 149A.Sepals.—Arrangement: Five sepals fused at the base forming a tubular star-shaped calyx. Length: About 1.7 cm. Diameter: About 2.5 mm. Shape: Oblong. Apex: Rounded. Base: Decurrent. Margin: Entire. Texture and luster, upper and lower surfaces: Smooth, glabrous; semi-glossy. Color: When opening and fully opened, upper surface: Close to 139A. When opening and fully opened, lower surface: Close to 139B.Peduncles.—Length: About 2.6 cm. Diameter: About 1.3 mm. Strength: Moderately strong. Texture and luster: Smooth, glabrous; semi-glossy. Color: Close to 143C.Reproductive organs.—Stamens: Quantity per flower: Five. Filament length: About 2.1 cm. Filament color: Close to 157D. Anther length: About 2 mm. Anther shape: Ovate. Anther color: Close to 155A. Pollen amount: Abundant. Pollen color: Close to 158A. Pistils: Quantity per flower: One. Pistil length: About 2.5 cm. Style length: About 1.9 cm. Style color: Close to N144D. Stigma diameter: About 2 mm. Stigma shape: Rounded. Stigma color: Close to 144B. Ovary color: Close to N144C. Fruits: Quantity produced per plant: About 68 during the flowering season. Length: About 5.5 mm. Diameter: About 5 mm. Texture: Smooth, glabrous. Color: Close to 161A. Seeds: Quantity per flower: About 80. Length: About 0.3 mm. Diameter: About 0.3 mm. Texture: Smooth, glabrous. Color: Close to 200A.Garden performance: Plants of the newPetuniahave been observed to have good garden performance and tolerate wind, rain, temperatures ranging from about 5 C to about 40 C and to be suitable for USDA Hardiness Zone 11.Pathogen & pest resistance: To date, plants of the newPetuniahave not been observed to be resistant to pathogens and pests common toPetuniaplants. | 6,608 |
PP35625 | DETAILED BOTANICAL DESCRIPTION The aforementioned photograph and following observations, measurements and values describe plants grown during the spring and summer in 22-cm containers in a glass-covered greenhouse in Rheinberg, Germany and under cultural practices typical of commercialPetuniaproduction. During the production of the plants, day and night temperatures averaged 18C and light levels averaged 4,500 lux. Plants were twelve weeks old when the photograph was taken and 25 weeks old when the description was taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, Fifth Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:PetuniaXhybrida‘Dopetsweebapi98’.Parentage:Female, or seed, parent.—Proprietary selection ofPetuniaXhybridaidentified as code number TT19-K0815, not patented.Male, or pollen, parent.—Proprietary selection ofPetuniaXhybridaidentified as code number TT20-K0851, not patented.Propagation:Type.—By terminal vegetative cuttings.Time to initiate roots, summer.—About five days at temperatures about 20C.Time to initiate roots, winter.—About seven days at temperatures about 20C.Time to produce a rooted young plant, summer.—About three weeks at temperatures about 20C.Time to produce a rooted young plant, winter.—About four weeks at temperatures about 20C.Root description.—Fine, fibrous; close to 155B in color, actual color of the roots is dependent on substrate composition, water quality, fertilizers, substrate temperature and age of roots.Rooting habit.—Freely branching; dense.Plant description:Plant and growth habit.—Semi-upright and uniformly mounding plant habit; freely branching habit with about three to five primary lateral branches each with about ten to twelve secondary branches developing after pinching; vigorous growth habit and moderate growth rate.Plant height, soil level to top of foliar plane.—About 21 cm.Plant height, soil level to top of floral plane.—About 22.5 cm.Plant diameter.—About 73 cm.Lateral branch description:Length.—About 31 cm.Diameter.—About 6 mm.Internode length.—About 2.4 cm.Strength.—Moderately strong.Aspect.—Initially upright to somewhat outwardly spreading.Texture and luster.—Pubescent; semi-glossy.Color, developing.—Close to 143A.Color, developed.—Close to 144A; at the internodes, close to 144B.Leaf description:Arrangement.—Before flowering, alternate; after flowering, opposite; simple.Length.—About 5.1 cm.Width.—About 2.5 cm.Shape.—Spatulate.Apex.—Obtuse.Base.—Attenuate.Margin.—Entire.Texture and luster, upper and lower surfaces.—Pubescent; leathery; semi-glossy.Venation pattern.—Pinnate; arcuate.Color.—Developing leaves, upper surface: Close to 146A. Developing leaves, lower surface: Close to 146B. Fully expanded leaves, upper surface: Close to 147B; venation, close to 146A. Fully expanded leaves, lower surface: Close to 147C; venation, close to 146B.Petioles.—Length: About 3.1 mm. Diameter: About 3 mm. Strength: Moderately strong; firm. Texture and luster, upper and lower surfaces: Smooth, glabrous; matte. Color, upper surface: Close to 146B. Color, lower surface: Close to 146C.Flower description:Flower type and flowering habit.—Single salverform flowers arising from leaf axils; freely flowering habit with usually about 408 flowers and flower buds developing per plant during the flowering season; flowers face mostly upright to outwardly.Fragrance.—None detected.Natural flowering season.—Plants flower continuously during the spring and summer in Germany; early flowering habit, plants typically beginning flowering about nine weeks after planting.Flower longevity.—Individual flowers last about two to three days on the plant; flowers persistent.Flower buds.—Length: About 4.4 cm. Diameter: About 6 mm. Shape: Ovoid. Texture and luster: Rippled; semi-glossy. Color: Close to 144B.Flower diameter.—About 5.8 cm by 6.4 cm.Flower depth(height).—About 5.8 cm.Flower throat diameter.—About 1.1 cm.Flower tube length.—About 2.7 cm.Flower tube diameter, proximally.—About 5 mm.Corolla.—Arrangement: Five petals fused at the base and opening into a flared trumpet. Petal lobe length (from throat): About 2.5 cm. Petal lobe width: About 2.9 cm. Petal shape: Roughly spatulate. Petal apex: Obtuse. Petal margin: Entire; slightly undulate. Petal texture and luster, upper and lower surfaces: Rippled, glabrous; semi-glossy. Throat texture and luster: Rippled; semi-glossy. Tube texture and luster: Rippled; semi-glossy. Color: Petal lobe, when opening, upper surface: Close to 75A. Petal lobe, when opening, lower surface: Close to 75B. Petal lobe, fully opened, upper surface: Close to N74C; towards the center, close to NN155D; venation, close to N144A; color does not change with subsequent development. Petal lobe, fully opened, lower surface: Close to N74B; venation, close to N144B; color does not change with subsequent development. Flower throat: Close to 151A; venation, close to 152A. Flower tube: Close to 144C; venation, close to 144B.Sepals.—Arrangement: Five sepals fused at the base forming a tubular star-shaped calyx. Length: About 1.4 cm. Diameter: About 2.1 mm. Shape: Oblong. Apex: Rounded. Base: Decurrent. Margin: Entire. Texture and luster, upper and lower surfaces: Smooth, glabrous; semi-glossy. Color: When opening, upper surface: Close to 147A. When opening, lower surface: Close to 147B. Fully opened, upper surface: Close to N137D. Fully opened, lower surface: Close to 146A.Peduncles.—Length: About 2.2 cm. Diameter: About 1.2 mm. Strength: Moderately strong. Texture and luster: Smooth, glabrous; semi-glossy. Color: Close to 143A.Reproductive organs.—Stamens: Quantity per flower: Five. Filament length: About 2.1 cm. Filament color: Close to 145C. Anther length: About 2 mm. Anther shape: Ovate. Anther color: Close to 8D. Pollen amount: Abundant. Pollen color: Close to 10A. Pistils: Quantity per flower: One. Pistil length: About 2.2 cm. Style length: About 1.9 cm. Style color: Close to 145B. Stigma diameter: About 2 mm. Stigma shape: Rounded. Stigma color: Close to 145C. Ovary color: Close to 145A. Fruits: Quantity produced per plant: About 76 during the flowering season. Length: About 9 mm. Diameter: About 5 mm. Texture: Smooth, glabrous. Color: Close to 161C. Seeds: Quantity per flower: About 269. Length: About 0.4 mm. Diameter: About 0.4 mm. Texture: Smooth, glabrous. Color: Close to 200A.Garden performance: Plants of the newPetuniahave been observed to have good garden performance and tolerate wind, rain, temperatures ranging from about 5 C to about 40 C and to be suitable for USDA Hardiness Zone 11.Pathogen & pest resistance: To date, plants of the newPetuniahave not been observed to be resistant to pathogens and pests common toPetuniaplants. | 6,808 |
PP35626 | DETAILED BOTANICAL DESCRIPTION The aforementioned photographs and following observations and measurements describe plants grown during the early summer in 24-cm containers in an outdoor nursery in Higashiomi, Shiga, Japan and under conditions and practices which approximate those generally used in commercialXerochrysumproduction. During the production of the plants, day temperatures averaged 23 C and night averaged 13 C. Measurements and numerical values represent averages for typical flowering plants. Plants were four months old when the photographs were taken and five months old when the detailed description was taken. In the following description, color references are made to The Royal Horticultural Society Colour Chart, 2001 Edition, except where general terms of ordinary dictionary significance are used.Botanical classification:Xerochrysum bracteatum‘Bonxer 1856’.Parentage:Female, or seed, parent.—Proprietary selection ofXerochrysum bracteatumidentified as code number 16-56, not patented.Male, or pollen, parent.—Proprietary selection ofXerochrysum bracteatumidentified as code number 16-68, not patented.Propagation:Type.—Terminal vegetative cuttings.Time to initiate roots, summer.—About seven days at temperatures about 18 C to 21 C.Time to initiate roots, winter.—About ten days at temperatures about 18 C to 21 C.Time to produce a rooted cutting, summer.—About three weeks at temperatures about 18 C to 21 C.Time to produce a rooted cutting, winter.—About four weeks at temperatures about 18 C to 21 C.Root description.—Fibrous; typically white in color, actual color of the roots is dependent on substrate composition, water quality, fertilizer type and formulation, substrate temperature and physiological age of roots.Rooting habit.—Freely branching; medium density.Plant description:Plant form and growth habit.—Upright and uniformly mounding plant habit with inflorescences held above the foliage on strong peduncles; vigorous growth habit.Plant height.—About 46 cm.Plant diameter or spread.—About 52 cm.Lateral branches.—Quantity per plant: Freely branching habit with about 13 lateral branches develop per plant. Length: About 35.8 cm. Diameter: About 4.1 mm. Internode length: About 1.7 cm. Aspect: Upright to somewhat outwardly. Strength: Strong. Texture: Rough, moderately pubescent. Color: Close to 137B.Leaf description.—Arrangement: Alternate, simple; sessile. Length: About 6.1 cm. Width: About 1.2 cm. Shape: Linear. Apex: Acuminate. Base: Attenuate. Margin: Entire; not undulate to slightly undulate. Texture, upper and lower surfaces: Rough, moderately pubescent. Venation pattern: Pinnate; reticulate. Color: Developing leaves, upper surface: Close to NN137C. Developing leaves, lower surface: Close to 138A. Fully expanded leaves, upper surface: Close to NN137A; venation, close to 138A. Fully expanded leaves, lower surface: Close to NN137C; venation, close to 138B.Inflorescence description:Appearance.—Terminal double-type inflorescence form with numerous deltoid involucral bracts; involucral bracts and disc florets developing acropetally on a capitulum; inflorescences positioned above the foliar plane on strong peduncles; inflorescences face mostly upright.Flowering habit.—Freely flowering habit; about 36 inflorescence buds and inflorescences per plant.Fragrance.—None detected.Time to flower.—In Japan, plants begin to flower about 21 weeks after planting and in the garden, plants flower continuously from the spring through the autumn.Post-production longevity.—Inflorescences maintain good substance for about seven to ten days on the plant; inflorescences persistent.Inflorescence buds.—Height: About 1.8 cm. Diameter: About 1.7 cm. Shape: Ovoid with acute apex. Color: Distally, close to N34A and proximally, close to 150D.Inflorescence size.—Diameter: About 5.6 cm. Depth (height): About 2.2 cm. Disc diameter: About 1.9 cm. Disc height: About 7.1 mm.Receptacles.—Diameter: About 2.5 cm. Height: About 5.5 mm. Color: Close to 150D.Involucral bracts.—Quantity per inflorescence and arrangement: About 225 arranged in numerous whorls; bracts imbricate. Length: About 1.6 cm. Width: About 6 mm. Shape: Deltoid. Apex: Acuminate. Base: Truncate. Margin: Entire. Texture, upper and lower surfaces: Smooth, glabrous; papery; durable. Orientation: Initially upright becoming more outward with development. Color: When opening and fully opened, upper surface: Close to 34A and towards the margins, close to N34A; color does not change with subsequent development. When opening and fully opened, lower surface: Close to 31A and towards the margins, close to 34B; color does not change with subsequent development.Disc florets.—Quantity per inflorescence and arrangement: Numerous disc florets are spirally arranged in the center of the receptacle. Length: About 1 cm. Diameter, distally: About 2 mm. Diameter, proximally: About 0.8 mm. Shape: Tubular; apex dentate, five-pointed. Texture, inner and outer surfaces: Smooth, glabrous. Color: When developing, inner and outer surfaces: Close to 17A. Fully developed, inner and outer surfaces: Apex: Close to 17A. Mid-section: Close to 150C. Base: Close to 150D.Peduncles.—Length: About 5.8 cm. Diameter: About 2.8 mm. Strength: Strong. Aspect: Upright to somewhat outwardly. Texture: Rough, pubescent. Color: Close to 138C.Reproductive organs.—Androecium: Quantity per disc floret: About five. Filament length: About 2.5 mm. Filament color: Close to 150D. Anther size: About 0.8 mm by 2.6 mm. Anther shape: Linear. Anther color: Close to 150D. Pollen amount: None observed. Gynoecium: Quantity per disc floret: One. Pistil length: About 9.5 mm. Stigma shape: Bi-parted. Stigma color: Close to 17B. Style color: Close to 150D. Ovary color: Close to 155A.Seeds and fruits.—To date, seed and fruit production has not been observed on plants of the newXerochrysum.Pathogen & pest resistance: To date, plants of the newXerochrysumhave not been observed to be resistant to pathogens and pests common toXerochrysumplants.Temperature tolerance: Plants of the newXerochrysumhave been observed to tolerate temperatures ranging from about 1 C to about 35 C. | 6,145 |
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